Treatment to strengthen the material structure

A multi-chamber processing system forms high-quality, thin high-k dielectric layers with controlled properties, addressing leakage current issues by forming a high-quality interfacial layer and dielectric layer, thereby improving transistor performance.

JP2026500808APending Publication Date: 2026-01-08APPLIED MATERIALS INC
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Patent Information

Application Number
JP2025539793
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-01-10
Filing Date
2023-12-18
Publication Date
2026-01-08

AI Technical Summary

Technical Problem

The reduction in thickness of high-k dielectric layers for semiconductor devices leads to increased leakage current, limiting device performance, as existing methods reach the limits of dielectric constant enhancement.

Method used

A method involving pre-cleaning, interface layer formation, hydration, and deposition processes within a multi-chamber processing system to form a high-quality, thin high-k dielectric layer without breaking vacuum, using gases like NF3, HCl, NH3, and H2O, and techniques like ALD and plasma nitridation.

Benefits of technology

The method enables improved dielectric constant and reduced leakage current, enhancing transistor performance by forming a controlled, high-quality interfacial layer and high-k dielectric layer.

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Abstract

A method for forming a semiconductor structure includes performing a pre-treatment process including annealing a surface of a substrate in a hydrogen (H) atmosphere, performing an interface formation process including thermally oxidizing the pre-treated surface of the substrate to form an interface layer, and performing a post-treatment process including annealing the surface of the formed interface layer in an ammonia (NH) atmosphere.
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Citation Information

Patent Citations

  • Method for manufacturing semiconductor device

    JP2004288923A

  • Integrated scheme for forming interpoly dielectric for nonvolatile memory device

    JP2009021608A

  • Insitu gas-phase surface activation of SiO2

    JP2014506013A

  • Treatments to improve device performance

    WO2022187299A1