Hybrid architecture for quantum object confinement devices

Abstract

A confinement device is provided that includes one or more sort sections and a computation section. Each sort section includes a plurality of sort section radio frequency (RF) rails that define a plurality of sort confinement regions configured to confine quantum objects when a sort section RD voltage is applied. Each sort section RF rail has a sort thickness in a direction perpendicular to a longitudinal axis of the sort section RF rail. The computation section includes a plurality of computation section RF rails that define a plurality of computation confinement regions configured to confine quantum objects when a computation section RF voltage is applied. Each computation section RF rail has a computation thickness in a direction perpendicular to the longitudinal axis of the computation section RF rail. The computation thickness is greater than the sort thickness.

Description

[Technical Field]

[0001] [Related Applications] This application claims priority to U.S. Application No. 18 / 527998, filed December 4, 2023, U.S. Application No. 63 / 504808, filed May 30, 2023, and U.S. Application No. 63 / 476226, filed December 20, 2022, the contents of which are incorporated by reference herein in their entireties.

[0002] [Technical field] Various embodiments relate to quantum object confinement devices with hybrid architectures, for example, quantum object confinement devices comprised of multiple sections, and systems including the quantum object confinement devices, where the sections are configured such that each section performs a different class of function. [Background technology]

[0003] In various scenarios, a system may be configured to perform multiple functions, with different functions having different tolerances (e.g., noise present in signals applied to various electrical components of the system) and / or operational parameters specific to the different functions. For example, an ion trap may use electrical potentials to trap multiple ions in one or more respective potential wells. Various functions may be implemented to move ions in specific ways through portions of the ion trap and / or confine ions to specific portions of the ion trap. These various functions may have different tolerances for noise in the signals used to generate the electrical potentials. Through hard work, ingenuity, and improvement, solutions configured in accordance with embodiments of the present invention have been developed to address many of the challenges of conventional systems such as those described above, many of which are described in detail herein. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] U.S. Provisional Patent Application No. 63 / 379040 Summary of the Invention [Means for solving the problem]

[0005] Example embodiments provide quantum object confinement devices, systems including quantum object confinement devices, and methods of operating systems including quantum object confinement devices with hybrid architectures. In various embodiments, a quantum object confinement device (also referred to herein as a confinement device) is comprised of two or more sections, each configured to perform a particular class of function on confined quantum objects. For example, in various embodiments, a confinement device includes a sorting section configured to perform sorting and storage functions on quantum objects confined within the sorting section. In various embodiments, a confinement device includes a quantum operation section (also referred to herein as an operation section) configured to perform quantum operations. In various embodiments, quantum operations include quantum logic gates of one or more qubits (e.g., two qubits), entanglement operations, read and / or measurement operations, shelving / deshelving operations, resonant laser cooling operations, and / or other operations in which one or more quantum objects interact with an external field (e.g., a magnetic field, a magnetic field gradient, a laser beam / pulse, a microwave, etc.).

[0006] In various embodiments, the shape, arrangement, and / or operational parameters of the sort section may differ from the shape, arrangement, and / or operational parameters of the operational section. For example, the sort confinement region of the sort section may be configured to confine quantum objects closer to the surface of the confinement device than the operational confinement region of the operational section. For example, the noise tolerance of the sort section may differ from the noise tolerance of the operational section.

[0007] In various embodiments, a transition zone is disposed between sections configured to perform different classes of functions. For example, in one embodiment, a transition zone is disposed between a sorting section and a computing section. In various embodiments, a transition zone is an area of ​​a confinement device where the shape or geometry of the confinement device and / or a computing parameter of the confinement device transitions between sections connected by the transition zone. In various embodiments, the transition between the shape and / or computing parameter within the transition zone is configured such that quantum objects traversing the transition zone from a first section to a second section (e.g., from the sorting section to the computing section or vice versa) will perceive the change in shape and / or computing parameter adiabatically.

[0008] According to one aspect of the present disclosure, a quantum object confinement device is provided. In one embodiment, the quantum object confinement device includes one or more sort sections and a computation section. Each sort section of the one or more sort sections includes a plurality of sort section radio frequency (RF) rails. The plurality of sort section RF rails are configured to define a plurality of sort confinement regions configured to confine quantum objects when a sort section RF voltage is applied. Each sort section RF rail of the plurality of sort section RF rails has a sort thickness in a direction perpendicular to a longitudinal axis of the sort section RF rail. The computation section includes a plurality of computation section RF rails. The plurality of computation section RF rails define a plurality of computation confinement regions configured to confine quantum objects when an operational RF voltage is applied. Each computation section RF rail of the plurality of computation section RF rails has an operational thickness in a direction perpendicular to the longitudinal axis of the computation section RF rail. The operational thickness is greater than the sort thickness.

[0009] In an exemplary embodiment, the plurality of sort section RF rails comprises a plurality of parallel sort section RF rail pairs separated by a sort interval. The plurality of computation section RF rails comprises a plurality of parallel computation section RF rail pairs separated by a computation interval. The sort interval is greater than the computation interval. As an example, the sort confinement region is configured to confine quantum objects at a surface distance of the quantum object confinement device of the sort distance. The computation confinement region is configured to confine quantum objects at a surface distance of the quantum object confinement device of the computation distance. The computation distance is greater than the sort distance.

[0010] In an exemplary embodiment, the containment device further comprises one or more transition zones, each transition zone of the one or more transition zones being disposed between the computation section and a respective sort section of the one or more sort sections.

[0011] In one embodiment, the transition zone comprises a plurality of transition RF rails, each transition RF rail of the plurality of transition RF rails having a thickness that varies over the length of the transition RF rail.

[0012] In one embodiment, the thickness of the transition RF rail is (a) substantially equal to the sort thickness at the end of the transition zone adjacent to the respective sort section, and (b) substantially equal to the compute thickness at the end of the transition zone adjacent to the compute section.

[0013] In one embodiment, the plurality of transition RF rails comprises a plurality of parallel transition RF rail pairs separated by (a) a sort interval at the end of the transition zone adjacent to the respective sort section, and (b) a computation interval at the end of the transition zone adjacent to the computation section.

[0014] In one embodiment, the transition zone is configured to change the quantum object-to-confinement device surface distance of the quantum objects confined by the confinement device between (a) a sorting distance when the quantum objects are at the edge of the transition zone adjacent to each sorting section and (b) an operation distance when the quantum objects are at the edge of the transition zone adjacent to the operation section. The change in the surface distance of the quantum objects in the quantum object confinement device is adiabatic.

[0015] In one embodiment, the sorting section further comprises a plurality of sorting control electrodes configured to operate according to a first noise tolerance, and the computing section comprises a plurality of computing control electrodes configured to operate according to a second noise tolerance, the first noise tolerance being different from the second noise tolerance.

[0016] In one embodiment, the sort control electrode comprises a plurality of broadcast control electrodes configured to receive respective broadcast voltage signals.

[0017] In one embodiment, a sort control electrode of the plurality of sort control electrodes has a sort width and an operation control electrode of the plurality of operation control electrodes has an operation width, the operation width being greater than the sort width.

[0018] In one embodiment, the sort section is configured to perform a sort function and the computation section is configured to perform a quantum computation function.

[0019] According to another embodiment, a system is provided. In one embodiment, the system includes a plurality of voltage sources, a plurality of computation filters, a plurality of sorting filters, and a plurality of confinement devices. The confinement device includes one or more sorting sections and a computation section. Each sorting section of the one or more sorting sections includes a plurality of sorting section radio frequency (RF) rails. The plurality of sorting section RF rails are configured to define a plurality of sorting confinement regions configured to confine quantum objects when a sorting section RF voltage is applied. Each sorting section RF rail of the plurality of sorting section RF rails has a sorting thickness in a direction perpendicular to a longitudinal axis of the sorting section RF rail. The computation section includes a plurality of computation section RF rails. The plurality of computation section RF rails are configured to define a plurality of computational confinement regions configured to confine quantum objects when a computational RF voltage is applied. Each computation section RF rail of the plurality of computation section RF rails has a computation thickness in a direction perpendicular to the longitudinal axis of the computation section RF rail. The computation thickness is greater than the sorting thickness. The plurality of voltage sources are configured to generate each voltage source that is filtered by a respective filter of the computation filter or the sorting filter. The voltage signals filtered by the computation filter are applied to a plurality of computation section RF rails, and the voltage signals filtered by the sort filter are applied to a plurality of sort section RF rails.

[0020] In one embodiment, the sorting filter and the operational filter have different filter responses.

[0021] In one embodiment, the sort section is configured to perform a sort function and the operation section is configured to perform a quantum operation function.

[0022] In one embodiment, the system further comprises one or more manipulation sources and one or more beam path systems, wherein the manipulation sources define one or more quantum operation locations, and the one or more beam path systems are configured to provide manipulation signals generated by each manipulation source of the one or more manipulation sources to each quantum operation location.

[0023] In one embodiment, the quantum operation locations include gate locations configured to perform quantum logic operations on one or more quantum entities and measurement locations configured to perform measurement operations on one or more quantum entities.

[0024] In one embodiment, the plurality of sort section RF rails comprises a plurality of parallel sort section RF rail pairs separated by a sort interval, and the plurality of computation section RF rails comprises a plurality of parallel computation section RF rail pairs separated by a computation interval, the sort interval being greater than the computation interval.

[0025] In one embodiment, the sorting confinement region is configured to confine the quantum objects such that a surface distance of the quantum object confinement device is a sorting distance, and the operation confinement region is configured to confine the quantum objects such that a surface distance of the quantum object confinement device is an operation distance, the operation distance being greater than the sorting distance.

[0026] In one embodiment, the containment device further comprises one or more transition zones, each transition zone of the one or more transition zones being disposed between the computation section and a respective sort section of the one or more sort sections.

[0027] In one embodiment, the transition zone comprises a plurality of transition RF rails, each transition RF rail of the plurality of transition RF rails having a thickness that varies over the length of the transition RF rail.

[0028] In one embodiment, the thickness of the transition RF rail is (a) substantially equal to the sort thickness at the end of the transition zone adjacent each sort section, and (b) substantially equal to the compute thickness at the end of the transition zone adjacent the compute section.

[0029] In one embodiment, the plurality of transition RF rails comprises a plurality of parallel transition RF rail pairs separated by (a) a sort separation at the ends at the transition zones adjacent to each sort section, and (b) a computation separation at the ends at the transition zones adjacent to the computation section.

[0030] In one embodiment, the transition zone is configured to change the quantum object-to-confinement device surface distance of quantum objects confined by the confinement device between (a) a sorting distance when the quantum objects are at an edge of the transition zone adjacent to a respective sorting section and (b) an operation distance when the quantum objects are at an edge of the transition zone adjacent to a operation section. The change in surface distance of the quantum objects in the quantum object confinement device is adiabatic.

[0031] In one embodiment, the sorting section further comprises a plurality of sorting control electrodes configured to operate according to a first noise tolerance, and the operating section comprises a plurality of operating control electrodes configured to operate according to a second noise tolerance, the first noise tolerance being different from the second noise tolerance.

[0032] In one embodiment, the sort control electrode comprises a plurality of broadcast control electrodes configured to receive respective broadcast voltage signals.

[0033] In one embodiment, a sort control electrode of the plurality of sort control electrodes has a sort width and an operation control electrode of the plurality of operation control electrodes has an operation width, the operation width being greater than the sort width.

[0034] Having generally described the present invention above, reference is now made to the accompanying drawings, which are not necessarily drawn to scale. [Brief explanation of the drawings]

[0035] [Figure 1] 1 is a block diagram of an example of a system including a quantum object confinement device according to one embodiment. [Figure 2] 1 is a schematic top view of at least a portion of an example quantum object confinement device, according to one embodiment. [Figure 3] 3 is a schematic top view of at least a portion of another example quantum object confinement device according to one embodiment. [Figure 4A] 1 is a schematic diagram of a portion of a sorting section of a quantum object confinement device according to one embodiment. [Figure 4B] 1 is a schematic diagram of a portion of a computing section of a quantum object confinement device according to one embodiment. [Figure 5A] 10 is a graph illustrating exemplary variations in geometry and operational parameters across sections and zones of a quantum object confinement device according to one embodiment. [Figure 5B] 10A-10C are graphs illustrating exemplary variations in geometry and operational parameters across different sections and zones of a quantum object confinement device according to one embodiment. [Figure 5C] 10 is a graph illustrating exemplary variations in geometry and operational parameters across further sections and zones of a quantum object confinement device according to one embodiment. [Figure 6] 1 is a schematic diagram of an example controller of a system including a quantum object confinement device configured to confine a quantum object therein in accordance with an illustrative embodiment. [Figure 7] 1 is a schematic diagram of an example computing entity of a system including a quantum object confinement device that may be used in accordance with an example embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0036] The present invention will now be described in more detail with reference to the accompanying drawings, although not all embodiments of the present invention are shown in the drawings. Indeed, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements. The term "or" (sometimes written as " / ") is used hereinafter in its alternative and conjunctive sense, unless otherwise stated. The terms "exemplary" and "exemplary" are used as examples that do not denote a level of quality. The terms "generally" and "approximately" represent within applicable technical and / or manufacturing tolerances and / or the user's measurement capabilities, unless otherwise stated. Common reference numerals refer to the same components throughout this specification.

[0037] In various scenarios, quantum objects are confined by quantum object confinement devices (also referred to herein as confinement devices). In various embodiments, the quantum objects are ions, atoms, ionic, molecular, and / or multipolar molecules, quantum dots, quantum particles, swarms, crystals, and / or combinations thereof (e.g., ionic crystals containing two or more ions), etc. In one embodiment in which the quantum objects are ions and / or ionic crystals, the confinement device is an ion trap, such as a surface ion trap, a Paul ion trap, etc. In various other embodiments, the confinement device is a device configured to confine quantum objects and includes two or more sections configured to perform a particular class of function.

[0038] In one embodiment, the containment device comprises one or more sorting and storage sections (herein, sorting sections) configured to perform a class of functions referred to herein as sorting and storage functions (also referred to herein as sorting functions). In various embodiments, the sorting and / or storage functions include sorting quantum objects. For example, quantum objects may be sorted to change the order or position of the quantum objects in a string / one-dimensional array, two-dimensional array, or three-dimensional array of quantum objects. In various embodiments, the sorting and / or storage functions include maintaining the quantum objects in a predetermined location in a manner that is unlikely to preserve and / or destroy quantum information stored by the quantum objects. For example, quantum objects may be stored such that external fields used to perform quantum computation functions on other quantum objects are unlikely to affect the quantum information encoded by the quantum states of the quantum objects.

[0039] The exemplary containment device further comprises a quantum operation section (also referred to herein as an operation section) configured to perform a class of functions referred to herein as operation functions. In various embodiments, functions in the operation functions class are functions that involve interacting one or more quantum objects with each other and / or with external fields (e.g., magnetic fields, magnetic field gradients, laser beams / pulses, microwaves). For example, quantum logic gates (e.g., one-qubit gates (single qubit gates), two-qubit gates, etc.) and read and / or measure operations are examples of functions in the operation functions class.

[0040] In various embodiments, sections configured to perform different classes of functions have different shapes and / or operational parameters. For example, in various embodiments in which a containment device includes radio frequency (RF) rails and control electrodes, the thickness of the RF rails in the sort section may be less than the thickness of the RF rails in the computing section, and the spacing between pairs of RF rails in the sort section may be greater than the spacing between pairs of RF rails in the computing section. For example, in various embodiments, the potential-generating elements (e.g., RF rails, control electrodes, etc.) in the sort section of the containment device may be configured to generate a containment region at a first height or distance from the surface of the containment device, and the potential-generating elements (e.g., RF rails, control electrodes, etc.) in the computing section of the containment device may be configured to generate a containment region at a second height or distance from the surface of the containment device. The second height or distance is greater than the first height or distance. In various embodiments, the noise tolerance of voltage signals applied to the potential-generating elements (e.g., RF rails, control electrodes, etc.) in the sort section of the containment device may differ from the noise tolerance of voltage signals applied to the potential-generating elements (e.g., RF rails, control electrodes, etc.) in the computing section of the containment device.

[0041] In various embodiments, the containment device further comprises one or more transition zones. For example, a transition zone is a portion of the containment device where the shape and / or operational parameters of the containment device transition or change from the shape and / or operational parameters of a first section of the containment device to the shape and / or operational parameters of a second section of the containment device. For example, a transition zone may be provided between the sort section and the computing section. The shape and / or operational parameters of the transition zone change throughout the transition zone from a shape and / or operational parameters that match the shape and / or operational parameters of the sort section to a shape and / or operational parameters that match the shape and / or operational parameters of the computing section. For example, in one embodiment, the thickness of the RF rails in the sort section is smaller than the thickness of the RF rails in the computing section, and the thickness of the RF rails in the transition zone transitions from the thickness of the RF rails in the sort section (at the end of the transition zone adjacent to and / or near the computing section) to the thickness of the RF rails in the computing zone (at the end of the transition zone adjacent to and / or near the computing section).

[0042] In various embodiments, geometry and / or operational parameter transitions that occur within a transition zone are such that quantum information stored by the quantum objects is maintained, undisturbed, and / or unperturbed as the quantum objects pass through the transition zone (e.g., from the sorting section to the operational section, or from the operational section to the sorting section). For example, quantum objects passing through a fiber zone will experience geometric shape and / or operational parameter transitions adiabatically. As will be appreciated by those skilled in the art, a quantum object's passage through a transition zone is smooth and / or the quantum object will experience a geometric shape and / or operational parameter transition smoothly if the geometric shape and / or operational parameter transition occurs slowly enough that the quantum object does not experience a discontinuity in the geometric shape and / or operational parameter and / or the first derivative of the geometric shape and / or operational parameter.

[0043] In various embodiments, quantum objects confined by the confinement device are used to perform experiments, controlled quantum state evolution, quantum computation, etc. In various embodiments, quantum objects are transported between various locations defined at least in part by the confinement device and / or a system comprising the confinement device. For example, quantum objects may be transported from a storage location in a sorting section to a quantum operation location defined in an operation section of the confinement device. While the quantum objects are located in the operation section, one or more quantum operations are performed on the quantum objects, after which the quantum objects are returned to the sorting section for storage and / or later sorting.

[0044] Conventional ion traps (e.g., surface ion traps) are configured to perform both sorting and computation functions in a common area. For example, sorting and logical quantum operations can be performed in the same location of the ion trap. A drawback of this approach is that sorting and computation functions typically have very different sets of design requirements. For example, in the section of the ion trap where the sorting function is performed, it may be preferable to minimize the distance between junctions to minimize the distance ions must travel to perform the sorting function. However, such ion trap geometries require, or implicitly require, confinement of ions near the surface of the ion trap. Additionally, high-speed sorting and transport functions require broadband voltage sources, which limits the amount of filtering that can be applied to mitigate the effects of resonance noise. Furthermore, the sorting function is more susceptible to various noise sources, such as electrochemical noise and voltage noise, than the computation function, and has its own unique ion crystal temperature requirements.

[0045] In the area where the computational functions are performed, a long distance between the ions and the surface of the ion trap offers the advantages of (1) reducing thermal hardening, which can be detrimental to the computational functions, and (2) reducing laser scattering from the surface of the ion trap, which can degrade the fidelity of readout and / or measurement operations. In the area where computational functions are performed, multiple individually controlled electrodes are typically required to compensate for imperfections in the trapping potential (alternatively, quantum operations can be serialized). Because the smallest unit cell geometry typically assumes the order of one qubit per junction, including quantum operation compensation electrodes in each unit cell can result in significant electrode and signal overhead. As mentioned above, the limited distance between the ions and the trap surface in the area where computational functions are performed tends to result in large RF electrode areas. Therefore, capacitance increases, resulting in high RF power consumption and potentially other technical challenges. The smallest unit cell geometry also means that reducing the distance between junctions to increase sorting speed simultaneously reduces the distance between quantum operation zones. This can add to the technical difficulties associated with finite laser beam width, laser scattering from fluorescent ions and trap surfaces, and crosstalk of quantum control fields such as microwave fields.

[0046] Therefore, technical challenges exist for conventional ion traps where sorting class functions and quantum computing class functions are performed in a common region of the ion trap.

[0047] Various embodiments provide technical solutions to these technical challenges. By separating a quantum object confinement device into a section configured to perform sorting and class preservation functions and a section configured to perform quantum computation functions, several technical advantages can be obtained, many of which offset the disadvantages of the minimum unit cell geometry. For example, if quantum computation locations are not included in the sorting section, there are no constraints on using smaller quantum object confinement device surface distances, and fewer electrodes are required to fully control the potential wells, so the associated distance scale of the sorting section can be reduced. Because sorting functions typically do not require as much control over potential wells as quantum computations, the confinement device could in principle operate with fewer independent signals and electrodes, assuming the quantum computation locations can be shared in a serial manner.

[0048] Reducing the surface distance of the quantum object confinement devices in the sort section allows for higher density storage of quantum objects, shortening sorting times, and reducing the RF electrode footprint, thereby consuming less RF power. If computation functions are not performed within the sort section, higher bandwidth electronics (or looser filtering requirements) can be used to achieve faster transport speeds while minimizing electronic drive complexity. A dense sort region also reduces overall geometry and potentially reduces laser scattering issues. By physically separating the quantum computation locations from the sort section and / or into a different computation section of the confinement device, a larger quantum object-to-confinement device surface distance can be used in the computation section. A larger surface distance of the quantum object confinement devices (relative to the sort section) can reduce quantum object heating issues during gating (computation) and laser scattering during read and measurement operations. Furthermore, the distance between quantum computation locations can be optimized for crosstalk issues without necessarily increasing the distance scale of the sort section proportionally. The use of sequentially separated quantum operation locations allows the ratio of qubits to quantum operation locations to be much greater than one, reducing the number of electrodes and signals required to operate all of the quantum operation locations.

[0049] Thus, various embodiments provide technical improvements in the fields of trapped atom systems and quantum charge-coupled device (QCCD) based quantum computing.

[0050] [Exemplary System with Quantum Object Confinement Device] Various embodiments provide a (quantum object) confinement device that includes a sorting section and a manipulation section that are physically separated and / or distinct from one another. Such a confinement device can be incorporated into various trapped atom systems, QCCD-based quantum computing systems, etc. An example of a QCCD-based quantum computing system is provided below.

[0051] Various embodiments provide a system 100, as shown in Figure 1, that includes a quantum object confinement device 200 / 300 (see Figures 2 and 3). The quantum object confinement device 200 / 300 is configured to confine multiple quantum objects, allowing the quantum states of each of the quantum objects to be manipulated or evolved in a controlled manner (e.g., according to a quantum circuit).

[0052] For example, quantum operation functions (e.g., one-qubit quantum logic gates, two-qubit quantum logic gates, initialization, read and / or measurement operations, etc.) may be performed on quantum objects located within quantum operation locations defined by confinement devices 200 / 300 and / or system 100 including the confinement devices. For example, confinement devices 200 / 300 are configured to maintain one or more quantum objects at the quantum operation locations and perform quantum operations on the one or more quantum objects. In various embodiments, system 100 including confinement devices 200 / 300 includes one or more manipulation sources 64 (e.g., manipulation sources 64A, 64B, 64C) configured to provide manipulation signals (e.g., laser beams and / or pulses, microwave signals, etc.) that interact with one or more quantum objects located at the quantum operation locations (quantum operation locations). In various embodiments, system 100 including confinement device 200 / 300 includes one or more magnetic field generators 70 (e.g., magnetic field generators 70A, 70B) configured to provide controlled magnetic fields and / or magnetic field gradients at the quantum operation locations to perform one or more quantum operations on one or more quantum objects disposed at the quantum operation locations. In various embodiments, system 100 including confinement device 200 / 300 includes a light collection system 80 configured to collect and / or detect light and / or photons emitted by one or more quantum objects disposed at the quantum operation locations.

[0053] In one embodiment, system 100 with confinement device 200 / 300 is and / or includes a quantum charge-coupled device (QCCD)-based quantum computer, e.g., one or more quantum objects confined by confinement device 200 / 300 may be used as qubits in a quantum computer.

[0054] In various embodiments, system 100 comprises computing entity 10 and quantum computer 110. In various embodiments, quantum computer 110 comprises controller 30 and quantum processor 115. In various embodiments, quantum processor 115 comprises a cryostat and / or vacuum chamber 40 surrounding confinement device 200 / 300, one or more manipulation sources 64 (e.g., manipulation sources 64A, 64B, 64C), one or more voltage sources 50, one or more magnetic field generators 70 (e.g., magnetic field generators 70A, 70B), a light collection system 80, and / or the like. In various embodiments, controller 30 is configured to control the operation of (e.g., control one or more drivers configured to operate) manipulation sources 64, voltage sources 50, magnetic field generators 70, vacuum system, and / or cryogenic cooling system (not shown), etc. In various embodiments, controller 30 is configured to receive signals (e.g., electrical signals) generated and provided by light collection system 80.

[0055] In one embodiment, the one or more manipulation sources 64 may include one or more lasers (e.g., optical lasers, microwave sources, and / or masers, etc.) or another manipulation source. In various embodiments, the one or more manipulation sources 64 are configured to manipulate and / or cause the controlled evolution of the quantum states of one or more quantum objects within the confinement device 200 / 300. For example, the first manipulation source 64A is configured to generate and / or provide a first manipulation signal, and the second manipulation source 64B is configured to generate and / or provide a second manipulation signal. The first and second manipulation signals are configured to perform one or more quantum operations (e.g., one-qubit gate, two-qubit gate, cooling, initialization, read / measurement, etc.) on the quantum objects confined by the confinement device 200 / 300.

[0056] In one embodiment, one or more manipulation sources 64 each provide a manipulation signal (e.g., a laser beam, etc.) to one or more portions (e.g., quantum operation locations) of atomic object confinement device 200 / 300 via a corresponding beam path system 66 (e.g., beam path systems 66A, 66B, 66C). In various embodiments, at least one beam path system 66 comprises a modulator configured to modulate the manipulation signal provided to confinement device 200 / 300 via beam path system 66. In various embodiments, manipulation sources 64, active components (e.g., modulators and / or the like) of beam path systems 66, and / or other components of quantum computer 110 are controlled by controller 30.

[0057] In various embodiments, confinement device 200 / 300 is an ion trap, such as a surface ion trap, a Paul ion trap, etc. In various embodiments, the quantum object is an ion, an atom, an ionic crystal and / or group of ions, an atomic crystal and / or group of ions, an ionic, molecular, and / or multipolar molecule, a quantum dot, a quantum particle, group, crystal, and / or combinations thereof (e.g., an ionic crystal), etc. In various embodiments, confinement device 200 / 300 is a confinement device suitable for confining the quantum object of the embodiments.

[0058] In various embodiments, quantum computer 110 includes one or more voltage sources 50. For example, the voltage sources may be arbitrary waveform generators (AWGs), digital-to-analog converters (DACs), and / or other voltage signal generators. For example, voltage sources 50 may include a plurality of control voltage drivers and / or voltage sources and / or at least one RF driver and / or voltage source. In one embodiment, voltage sources 50 are electrically connected to corresponding potential-generating elements (e.g., control electrodes and / or RF electrodes) of containment devices 200 / 300. In various embodiments, voltage sources 50 include a sorting voltage source electrically connected to potential-generating elements (e.g., control electrodes and / or RF electrodes) of the sorting section of containment devices 200 / 300 and an operating voltage source electrically connected to potential-generating elements (e.g., control electrodes and / or RF electrodes) of the computing section of containment devices 200 / 300.

[0059] In various embodiments, the voltage signals generated by voltage source 50 are filtered before being applied to the potential-generating elements (e.g., control electrodes and / or RF electrodes) of the sorting section of containment device 200 / 300. In one embodiment, system 100 includes sorting filter 52 and operational filter 54. Sort filter 52 is configured to filter the voltage signals applied to the potential-generating elements (e.g., control electrodes and / or RF electrodes) of the sorting section of containment device 200 / 300. Operational filter 54 is configured to filter the voltage signals applied to the potential-generating elements (e.g., control electrodes and / or RF electrodes) of the operation section of containment device 200 / 300. In various embodiments, sorting filter 52 and operational filter 54 have different filter responses, different cutoff frequencies, etc.

[0060] In various embodiments, quantum computer 110 includes one or more magnetic field generators 70 (e.g., magnetic field generators 70A, 70B). For example, the magnetic field generators may be an internal magnetic field generator 70A disposed within cryogenic and / or vacuum chamber 40 and / or an external magnetic field generator 70B disposed outside of cryogenic and / or vacuum chamber 40.

[0061] In various embodiments, magnetic field generator 70 includes a permanent magnet, a Helmholtz coil, an electromagnet, etc. In various embodiments, magnetic field generator 70 is configured to generate a magnetic field and / or a magnetic field gradient having a particular magnitude and a particular field direction at one or more locations defined by containment device 200 / 300.

[0062] In various embodiments, quantum computer 110 includes a light collection system 80 configured to collect and / or detect photons (e.g., stimulated emission) generated by quantum objects located at each quantum computing location (e.g., during a read / measurement operation). Light collection system 80 is comprised of one or more optical elements (e.g., lenses, mirrors, waveguides, fiber optic cables, etc.) and one or more photodetectors. In various embodiments, the photodetectors may be photodiodes, photomultiplier tubes, charge-coupled device (CCD) sensors, complementary metal oxide semiconductor (CMOS) sensors, microelectromechanical systems (MEMS) sensors, and / or other photodetectors that are sensitive to light at the expected fluorescence wavelengths of the quantum objects. In various embodiments, the detectors may be in electronic communication with controller 30, such as via one or more digital-to-analog converters 625 (see FIG. 6 ).

[0063] In various embodiments, computing entity 10 is configured to allow a user (e.g., via a user interface of computing entity 10) to provide input to quantum computer 110 and receive, view, etc. output from quantum computer 110. Computing entity 10 may communicate with a controller 30 of quantum computer 110 via one or more wired or wireless networks 20 and / or via direct wired and / or wireless communication. In exemplary embodiments, computing entity 10 may convert, organize, format, etc. information / data, quantum computing algorithms (e.g., quantum circuits), etc. into a computing language, executable instructions, command set, etc. that controller 30 can understand, execute, and / or implement.

[0064] In various embodiments, controller 30 is configured to control voltage source 50, magnetic field generator 70, cryogenic and / or vacuum systems that control the temperature and / or pressure within cryogenic and / or vacuum chamber 40, manipulation source 64, and / or other systems that control various environmental conditions (e.g., temperature, pressure, etc.) within cryogenic and / or vacuum chamber 40, configured to manipulate and / or cause the controlled evolution of the quantum states of one or more quantum objects within confinement device 200 / 300, and / or read and / or measure the quantum (e.g., qubit) states of one or more quantum objects within confinement device 200 / 300. For example, controller 30 may cause the controlled evolution of the quantum states of one or more quantum objects confined within confinement device 200 / 300 to execute a quantum circuit and / or algorithm. For example, controller 30 may read and / or detect the quantum states of one or more quantum objects within confinement device 200 / 300 at one or more times during the execution of a quantum circuit. In various embodiments, the quantum objects confined by the confinement device are used as qubits in quantum computer 110.

[0065] [Example of an atomic object confinement device] 2 provides a top view of at least a portion of an exemplary confinement device 200 that may be used to confine one or more quantum objects. For example, in the illustrated embodiment, the confinement device is an ion trap (e.g., a surface ion trap) and the quantum objects are ions and / or ionic crystals. In the exemplary embodiment, the confinement device 200 (e.g., a surface ion trap) is fabricated as part of an ion trap chip and / or as part of an ion trap device and / or package.

[0066] Containment device 200 includes sorting sections 210 (e.g., sorting sections 210A and 210B) and a computing section 230. In the illustrated embodiment, computing section 230 is disposed between two sorting sections 210. In various other embodiments, computing section 230 may be disposed between three or four sorting sections 210. In various embodiments, multiple computing sections 230 may be disposed between pairs of sorting sections 210, etc. In particular, in various embodiments, containment device 200 includes one or more sorting sections 210 and one or more computing sections 230.

[0067] The sort section 210 comprises a plurality of sort confinement regions 212 connected to adjacent sort confinement regions 212 by respective junctions 216. For example, in the illustrated embodiment, the sort confinement regions 212 of the sort section 210 form a grid or two-dimensional array of confinement regions. In various embodiments, the junction distances l shown in FIG. S The length scale of the sorting section, denoted by , is the length scale of the calculation section (e.g., the inter-junction distance l O ) is shorter than

[0068] The computation section 230 includes a plurality of computation confinement regions 232 having one or more quantum computation locations 234 defined along them. In various embodiments, each computation confinement region 232 has the same number and spatial distribution of quantum computation locations 234. In various embodiments, different computation confinement regions 232 may have different numbers and / or spatial distributions of quantum computation locations 234. In one embodiment, the various quantum computation locations 234 may be aligned such that a beam path (e.g., a beam provided via the beam path system 66) is incident on multiple quantum computation locations 234.

[0069] In various embodiments, the confinement device 200 includes one or more transition zones 220 (e.g., transition zones 220A, 220B). In various embodiments, the transition zones 220 are disposed between the sorting section 210 and the computing section 230. Each transition zone 220 includes multiple transition confinement regions 222. Each transition confinement region 222 connects one or more sorting confinement regions 212 to one or more computing confinement regions 232. For example, quantum objects are transported from the sorting section 210 to the computing section 230 (or vice versa) along the transition confinement regions 222 of the transition zone 220.

[0070] 3 illustrates another example containment device 300. The containment device 300 includes a sorting section 310 (e.g., sorting sections 310A and 310B) and a computing section 330. In the illustrated embodiment, the computing section 330 is disposed between two sorting sections 310. In particular, in various embodiments, the containment device 300 includes one or more sorting sections 310 and one or more computing sections 330.

[0071] The sort section 310 comprises a plurality of sort confinement regions 312 connected to adjacent sort confinement regions 312 by respective junctions 316. For example, in the illustrated embodiment, the sort confinement regions 312 of the sort section 310 form a grid or two-dimensional array of confinement regions.

[0072] The operation section 330 includes a plurality of operation confinement regions 332 in which one or more quantum operation locations are defined. In the illustrated embodiment, the quantum operation locations include a readout and / or measurement location 336 and a gate location 334. For example, the gate location 334 is disposed between two readout and / or measurement locations 336. For example, the gate location 334 is configured to perform a quantum logic operation thereat (e.g., a one-qubit gate, a two-qubit gate, etc.). The readout and / or measurement location 336 is configured to perform a readout and / or measurement operation.

[0073] The operation confinement region 332 of the containment device 300 is curved. For example, the operation confinement region 332 in the embodiment shown in Figure 3 has the shape of a sinusoidal function or a single period of a sine wave. In various embodiments, the operation confinement region 332 may have various shapes depending on the application.

[0074] In various embodiments, the confinement device 300 includes one or more transition zones 320 (e.g., transition zones 320A, 320B). In various embodiments, the transition zones 320 are disposed between the sorting section 310 and the computing section 330. Each transition zone 320 includes multiple transition confinement regions 322. Each transition confinement region 322 connects one or more sorting confinement regions 312 to one or more computing confinement regions 332. For example, quantum objects are transported from the sorting section 310 to the computing section 330 (or vice versa) along the transition confinement regions 322 of the transition zone 320.

[0075] In various embodiments, the shape and / or operational parameters of the sorting section 210, 310 are different from the shape and / or operational parameters of the operational section 230, 330. In various embodiments, the shape and / or operational parameters of the transition zone 220, 320 transition or change across the width of the transition zone, such that as the quantum objects are transported from the sorting section 210, 310, through the transition zone 220, 320, to the operational section 230, 330, the quantum objects experience a slow, adiabatic change in their environment. For example, the quantum object-to-confinement device surface distance (e.g., the distance between the quantum object and the surface of the confinement device) in the sorting section 210, 310 is shorter than the quantum object-to-confinement device surface distance in the operational section 230, 330. Thus, as the quantum objects pass through the transition region, the quantum object confinement device surface distance changes slowly and adiabatically.

[0076] In the illustrated embodiment, the arithmetic section 330 is disposed between two sorting sections 310. In another embodiment, the sorting section 310 is disposed between multiple arithmetic sections 330. For example, one or more arithmetic sections 330 may be disposed around a central sorting section 310.

[0077] FIG. 4A illustrates a portion of a sort section edge 410 that generates and / or defines a sort confinement region 212 / 312 when appropriate voltage signals are applied to potential generating elements (e.g., control electrodes 414 and RF rails 416 (e.g., RF rails 416A, 416B)). In one embodiment, the sort section edge 410 is defined at least in part by a plurality of RF electrodes or RF rails 416 (e.g., RF rails 416A, 416B). In various embodiments, the sort section edge 410 is defined at least in part by a plurality of rows of control electrodes 412 (e.g., control electrodes 412A, 412B, 412C). Each row of control electrodes 412 includes a plurality of control electrodes 414. In one embodiment, at least some of the control electrodes 414 are operated by application of broadcast control signals, as described, for example, in the aforementioned patent application Ser. No. 63 / 379,040, filed October 11, 2022, the contents of which are incorporated herein by reference in their entirety.

[0078] In various embodiments, the pair of RF rails 416 are substantially parallel, and the longitudinal axes 418 of the two RF rails 416 of the pair of RF rails are parallel to each other. The two RF rails 416 of the pair of RF rails are spaced apart by a sorting spacing S S The thickness of the RF rail 416 in a direction perpendicular to the longitudinal axis 418 of the RF rail 416 is a sort thickness T S In various embodiments, the row of control electrodes 412 extends substantially parallel to the longitudinal axis 418 of the RF rail 416. In one embodiment, the width of the control electrodes 414 in a direction substantially parallel to the longitudinal axis 418 of the RF rail is a sort width W S is.

[0079] FIG. 4B illustrates a portion of a computing section edge 430 that creates and / or defines a computing confinement region 232 / 332 when appropriate voltage signals are applied to potential generating elements (e.g., control electrodes 434 and RF rails 436 (e.g., RF rails 436A, 436B)). In one embodiment, computing section edge 430 is defined at least in part by a plurality of RF electrodes or RF rails 436 (e.g., RF rails 436A, 436B). In various embodiments, computing section edge 430 is defined at least in part by a sequence of a plurality of control electrodes 432 (e.g., control electrodes 432A, 432B, 432C). Each sequence of control electrodes 432 has a plurality of control electrodes 434. In various embodiments, the control electrodes 434 may be independently controlled (e.g., with independent voltage signals applied). In various embodiments, two or more control electrodes 434 may be configured to receive a broadcast voltage signal.

[0080] In various embodiments, the pair of RF rails 436 are substantially parallel, and the longitudinal axes 438 of the two RF rails 436 of the pair of RF rails are parallel to each other. The two RF rails 436 of the pair of RF rails are spaced apart by a calculation interval S O The thickness of the RF rail 436 in a direction perpendicular to the longitudinal axis 438 of the RF rail 436 is calculated as T O In various embodiments, the sequence of control electrodes 432 extends substantially parallel to the longitudinal axis 438 of the RF rail 436. In one embodiment, the width of the control electrodes 434 in a direction substantially parallel to the longitudinal axis 438 of the RF rail is a calculated width W O is.

[0081] In one embodiment, the confinement device comprising sort section edge 410 and operation section edge 430 is a surface Paul trap with symmetric RF rails 416, 436. In various embodiments, RF rails 416, 436 and control electrodes 414, 434 generate electrical potentials and / or electric fields experienced by quantum objects within respective sort confinement regions 212, 312 and operation confinement regions 232, 332 of confinement device 200, 300. In particular, RF rails 416, 436 may be configured to define respective sort confinement regions 212, 312 and respective operation confinement regions 232, 332, and control electrodes 414, 434 may be configured to at least partially control the transport and / or movement of quantum objects along the respective confinement regions.

[0082] As noted above, in various embodiments, the shape and / or operational parameters of sorting sections 210, 310 differ from the shape and / or operational parameters of operational sections 230, 330. Figures 4A and 4B illustrate at least some geometric differences between sorting section edge 410 and operational section edge 430. For example, in various embodiments, sort width W S is the calculation width W O smaller than (W S <W O ). As another example, in various embodiments, the sorting interval S S is the calculation interval S O greater than (S S >S O ) In another example, in various embodiments, the sort thickness T S is the calculated thickness T O greater than (T S >T O ).

[0083] For example, sorting filter 52 used to filter voltage signals applied to potential-generating elements (e.g., RF rail 416, control electrode 414) on sort section side 410 may have a different filter response than computation filter 54 used to filter voltage signals applied to potential-generating elements (e.g., RF rail 436, control electrode 434) on computation section side 430. For example, computation filter 54 may be configured to filter voltage signals to provide filtered voltage signals with less noise in one or more frequency bands than sorting filter 52. In another example, quantum objects located in the sort section have a shorter surface distance between the quantum objects and the confinement device than quantum objects located in the computation section, due at least in part to differences in the thickness and spacing of the RF rails in the sort section compared to the computation section.

[0084] For example, Figure 5A shows the quantum object-confinement device surface distance of a quantum object based on where the quantum object is located within confinement device 200 / 300. As used herein, the quantum object-confinement device surface distance is the distance between the quantum object and the surface of the confinement device. For example, the quantum object-confinement device surface distance is the distance in the z direction, as shown in Figures 4A and 4B. In Figures 4A and 4B, the surface of the confinement device is shown in the xy plane.

[0085] As shown in FIG. 5A, when a quantum object is placed in the first sorting section 210A or the second sorting section 210B, the quantum object-surface distance of the confinement device is the sorting distance H S When the quantum object is placed in the calculation section 230, the quantum object-surface distance of the confinement device is calculated as H O The calculation distance is larger than the sorting distance (H S <H O In one embodiment, the sorting distance H S In one embodiment, the sorting distance H S In various embodiments, the sorting distance HS In one embodiment, the calculated distance H O In one embodiment, the calculated distance H O is in the range of 30 μm to 100 μm. For example, in one embodiment, the calculated distance H O is in the range of 30 μm to 60 μm.

[0086] As quantum objects enter the transition zone 220A from the first sorting section 210A, the surface distance between the quantum objects and the confinement device decreases by a sorting distance H S As the quantum object passes through transition zone 220A toward computation section 230, the surface distance between the quantum object and the confinement device of the quantum object changes monotonically. For example, as the quantum object passes adiabatically through transition zone 220A, the surface distance of the quantum object to the quantum object confinement device changes, so that the quantum information stored by the quantum object is not disturbed or disrupted as the quantum object passes through the transition zone. When the quantum object reaches the edge of transition zone 220A adjacent to the computation zone, the surface distance of the quantum object confinement device changes to computation distance H O becomes.

[0087] In various embodiments, the sort width W S is the sorting distance H S Half the sorting distance H S range up to 1.2 times (e.g., H S / 2 <W S <1.2×H S ) In various embodiments, the calculation width W O is the calculated distance H O Half of the distance H O range up to 1.2 times (e.g., H O / 2 <W O <1.2×H O ) The sorting distance H S is the calculated distance H O Since it is shorter than the sort width W S is the calculation width W O5B shows an example of how the geometric shape of the sorting section 210, 310 differs from the shape of the computing section 230, 330. For example, the sorting thickness T S is the calculated thickness T of the RF rail 436 of the calculation section 230, 330 O The thickness of the RF rail in the transition zones 220, 320 varies gradually across the respective transition zones. In various embodiments, the thickness of the RF rail at the transition zone T S and calculated thickness T O is 200 μm or less. In one embodiment, the sort thickness T S is 150 μm or less. For example, in one embodiment, the sort thickness T S In one embodiment, the sort thickness T S In one embodiment, the calculated thickness T O is in the range of 50 μm to 200 μm. For example, in one embodiment, the calculated thickness T O is in the range of 100 μm to 200 μm.

[0088] 5B shows an example of how the geometric shape of the sort section 210, 310 differs from the shape of the computation section 230, 330. For example, the sort thickness T S is the calculated thickness T of the RF rail 436 of the calculation section 230, 330 O The RF rail thickness of the RF rail in the transition zone is less than the sort thickness T at the end of the transition zone 220, 320 adjacent and / or proximate to the sort section. S to the calculated thickness T at the edge of the transition zone 220, 320 adjacent and / or close to the calculated section. O The thickness of the RF rail in the transition zones 220, 320 varies gradually across the respective transition zones.

[0089] 5C is another example showing how the geometric shape of the sorting sections 210, 310 differs from the shape of the computing sections 230, 330. For example, the spacing between parallel pairs of RF rails 416 of the sorting sections 210, 310 is a sorting spacing S S and the spacing between the parallel pairs of RF rails 436 of the operation section side 430 is the operation spacing S O The sorting interval S S is the calculation interval S O and the spacing between the parallel pairs of RF rails in the transition zone is greater than the sort spacing S at the ends of the transition zones 220, 320 adjacent and / or proximate to the sort section. S to the calculation interval S at the edge of the transition zone 220, 320 adjacent and / or close to the calculation section O The spacing between the parallel pairs of RF rails in the transition zones 220, 320 varies gradually across each transition zone. In various embodiments, the calculated spacing S O and sorting interval S S is in the range of 16 μm to 200 μm. For example, in one embodiment, the calculation interval S O is in the range of 16 μm to 120 μm. For example, in one embodiment, the calculation interval S O is in the range of 16 μm to 100 μm. For example, in one embodiment, the sorting interval S S is in the range of 50 μm to 200 μm. For example, in one embodiment, the calculation interval S O is in the range of 100 μm to 200 μm.

[0090] For quantum objects passing through the transition zone 220, 320 (e.g., along the respective transition confinement regions 222, 322) from the sorting section 210, 310 to the computing section 230, 330, the RF rails are seen to thicken and move closer together as the quantum objects approach the computing section 230, 330. This increases the surface distance of the quantum object confinement device as the quantum objects move through the transition zone 220, 320 (e.g., along the respective transition confinement regions 222, 322) toward the computing section 230, 330. The RF rail spacing and RF rail thickness change gradually and / or smoothly to allow for an adiabatic change in the height of the quantum objects.

[0091] [Technical advantages] Conventional ion traps (e.g., surface ion traps) are configured to perform both sorting and computation functions in a common region. For example, sorting and logical quantum operations can be performed in the same location of the ion trap. A drawback of this approach is that the sorting and computation functions typically have significantly different design requirements. For example, in the portion of the ion trap where the sorting function is performed, it may be desirable to minimize the distance between junctions to minimize the distance ions must travel to perform the sorting function. However, such ion trap geometries require, or implicitly require, ions to be confined near the surface of the ion trap. High-speed sorting and transport functions require broadband voltage sources, which limits the degree of filtering that can be used to mitigate the effects of resonant noise. Furthermore, the sorting function is susceptible to different noise sources, such as electric fields and voltage noise, and has different temperature requirements for the ion crystal compared to the computation function.

[0092] In the region where the computational function is performed, a large distance between the ions and the ion trap surface offers the advantages of (1) reducing heating effects that can be detrimental to the computational function and (2) reducing laser scattering from the ion trap surface, which can degrade the fidelity of readout and / or measurement operations. In the region where the computational function is performed, multiple individually controlled electrodes are typically required to compensate for imperfections in the trapping potential (alternatively, quantum operations can be serialized). Because the minimum unit cell geometry typically assumes approximately one qubit per junction, including quantum operation compensation electrodes in each unit cell can result in significant electrode and signal overhead. The aforementioned limitations on the distance between the ions and the trap surface in the region where the computational function is performed can result in increased RF electrode area and, therefore, capacitance, resulting in increased RF power consumption and potentially other technical challenges. Furthermore, the minimum unit cell geometry means that reducing the distance between junctions to increase sorting speed simultaneously reduces the distance between quantum operation zones. This can increase technical challenges related to finite laser beam widths, laser scattering from fluorescent ions and the trap surface, and crosstalk between quantum control fields such as microwave fields.

[0093] Therefore, technical problems exist in conventional ion traps where sorting class functions and quantum computing class functions are performed in a common region of the ion trap.

[0094] Various embodiments provide technical solutions to these technical challenges. Separating a quantum object confinement device into a section configured to perform sorting and class storage functions and a section configured to perform quantum computation functions provides several technical advantages, many of which offset the drawbacks of the minimum unit cell geometry. For example, if quantum computation locations are not included in the sorting section, there are no constraints on using smaller quantum object confinement device surface distances, and fewer electrodes are required to adequately control the potential wells, so the associated distance scale of the sorting section can be reduced. Because sorting functions typically do not require as much control over the potential wells as quantum computations, the confinement device could in principle operate with fewer independent signals and electrodes, assuming the quantum computation locations can be shared in a serial manner.

[0095] Reducing the surface distance of the quantum object confinement device in the sort section allows for higher density storage of quantum objects, shortening sorting times, and reducing the RF electrode footprint, thereby consuming less RF power. When no computational functions are performed within the sort section, the use of broader bandwidth electronics (or looser filtering requirements) allows for faster transport speeds while minimizing the complexity of the electronic drive. A denser sort region also allows for a smaller overall geometry, potentially reducing laser scattering issues. Physically separating the quantum computation locations from the sort section and / or splitting them into a separate computational section of the confinement device allows for a larger quantum object-to-confinement device surface distance in the computational section. This larger quantum object-to-confinement device surface distance (compared to the sort section) can reduce quantum object heating issues during gating operations and reduce laser scattering during readout and / or measurement operations. Furthermore, the distance between quantum computation locations can be optimized for crosstalk issues without necessarily proportionally increasing the distance scale in the sort section. When separate quantum computing locations are used in series, the ratio of qubits to quantum computing locations is much greater than one, reducing the number of electrodes and signals required to activate all of the quantum computing locations. Thus, various embodiments provide technical improvements in the fields of trapped atom systems and quantum charge coupled device (QCCD)-based quantum computing.

[0096] [Example Controller] Various embodiments provide a system comprising a containment device 200, 300 including one or more sorting sections 210, 310 configured to perform sorting and storage functions and one or more processing sections configured to perform quantum processing functions. In exemplary embodiments, the system is a quantum charge-coupled device (QCCD-based) quantum computer 110 or other quantum computer. In various embodiments, the system (e.g., quantum computer 110) further includes a controller 30 configured to control various elements of the system. For example, controller 30 may be configured to control voltage source 50 configured to manipulate and / or induce the controlled evolution of the quantum state of one or more quantum objects confined by the confinement device and / or to read and / or detect the quantum state of one or more quantum objects confined by the confinement device, a cryogenic system and / or a vacuum system for controlling the temperature and pressure within cryogenic and / or vacuum chamber 40, manipulation sources 64 (e.g., manipulation sources 64A, 64B, 64C), active components of beam path system 66 (e.g., beam path systems 66A, 66B, 66C), magnetic field generators 70 (e.g., magnetic field generators 70A, 70B), and / or other systems that control environmental conditions (e.g., temperature, humidity, pressure, magnetic field gradients, etc.) within cryogenic and / or vacuum chamber 40.

[0097] As shown in FIG. 6 , in various embodiments, the controller 30 may include various controller elements, including one or more processing devices 605, memory 610, driver controller element 615, communication interface 620, digital-to-analog converter 625, etc. For example, the one or more processing devices 605 may include one or more processing elements, such as a complex programmable logic device (CPLD), a microprocessor, a coprocessing entity, an application-specific instruction-set processor (ASIP), an integrated circuit, an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a programmable logic array (PLA), a hardware accelerator, or other processing device and / or circuit. The term circuit may refer to an entirely hardware embodiment or a combination of hardware and a computer program product. In an exemplary embodiment, the one or more processing devices 605 of the controller 30 include and / or communicate with a clock. In various embodiments, this clock defines the clock cycle of the system.

[0098] For example, the memory 610 may be a hard disk, a ROM (Read Only Memory), a PROM (Programmable Read Only Memory), an EPROM (Erasable Programmable Read Only Memory), an EEPROM (Electrically Erasable Programmable Read-Only Memory), a flash memory, an MMC (Multi Media Card), an SD memory card, a memory stick, a CBRAM (Conductive Bridge Random Access Memory), a PRAM (Parameter Random Access Memory), a FeRAM (Ferroelectric Random Access Memory), a RRAM (Resistive Random Access Memory), a SONOS (Silicon Oxide Nitride Oxide Semiconductor), a racetrack memory, a RAM, a DRAM (Dynamic Random Access Memory), an SRAM (Static Random Access Memory), a FPM DRAM (Fast Page Mode DRAM), an EDO DRAM (Extended Data Out DRAM), an SDRAM (Synchronous Dynamic Random Access Memory), a DDR SDRAM (Double-Data-Rate SDRAM), a DDR2 It may include non-transitory memory such as one or more volatile and / or non-volatile memory storage of Double-Data-Rate 2 SDRAM (SDRAM), Double-Data-Rate 3 SDRAM (DDR3 SDRAM), Rambus DRAM (RDRAM), Rambus Inline Memory Module (RIMM), Dual Inline Memory Module (DIMM), Single Inline Memory Module (SIMM), Video Random Access Memory (VRAM), cache memory, register memory, etc.In various embodiments, memory 610 may store qubit records corresponding to qubits of the quantum computer (e.g., in a qubit record data store, a qubit record database, a qubit record table, etc.), calibration tables, executable cues, computer program code (e.g., in one or more computer languages, specialized controller languages, etc.), etc. In exemplary embodiments, execution of at least a portion of the computer program code stored in memory 610 (e.g., by processing device 605) causes controller 30 to perform one or more steps, operations, processes, procedures, etc. described herein for controlling one or more components of quantum computer 110 (e.g., voltage source 50, manipulation source 64, magnetic field generator 70, etc.) to cause controlled evolution of the quantum states of one or more quantum objects, detect and / or read the quantum states of one or more quantum objects, etc.

[0099] In various embodiments, the driver controller element 615 may include one or more drivers and / or controller elements each configured to control one or more drivers. In various embodiments, the driver controller element 615 may include a driver and / or a driver controller. For example, a driver controller may be configured to operate one or more corresponding drivers according to executable instructions, commands, etc. scheduled and executed by the controller 30 (e.g., by the processing device 605). In various embodiments, the driver controller element 615 may enable the controller 30 to operate the operation source 64. In various embodiments, the driver may be a laser driver, a vacuum component driver, a driver for controlling the flow of current and / or voltage applied to RF, control, and / or other electrodes (e.g., shim electrodes, etc.) used to maintain and / or control the containment potential of the containment device (and / or other drivers for providing driver action sequences and / or control signals to potential-generating elements of the containment device), a cryogenic and / or vacuum system component driver, etc. For example, the driver may control and / or include a control and / or RF voltage driver and / or voltage source that provides voltage and / or electrical signals to the control electrodes 414, 434 and / or RF rails 416, 436. In various embodiments, the controller 30 includes means for transmitting and / or receiving signals from one or more detectors, such as photoreceiver components (e.g., cameras, MEMs cameras, CCD cameras, photodiodes, photomultiplier tubes, etc.) of the light collection system 80. For example, the controller 30 may include one or more digital-to-analog converters 625 configured to receive signals from one or more detectors, photoreceiver components, calibration sensors, etc.

[0100] In various embodiments, controller 30 may include a communications interface 620 for interfacing and / or communicating with one or more computing entities 10. For example, controller 30 may include a communications interface 620 for receiving executable instructions, command sets, etc. from computing entities 10, and for providing output received from quantum processor 115 (e.g., via light collection system 80) and / or results of processing output (received from quantum processor 115) to computing entity 10. In various embodiments, computing entities 10 and controller 30 may communicate via a direct wired and / or wireless connection and / or one or more wired and / or wireless networks 20.

[0101] Exemplary Computing Entities 7 provides an explanatory schematic diagram depicting an exemplary computing entity 10 that may be used in conjunction with embodiments of the present invention. In various embodiments, computing entity 10 is configured to allow a user (e.g., via a user interface of computing entity 10) to provide input to quantum computer 110 and receive, display, analyze, etc. output from quantum computer 110.

[0102] As shown in FIG. 7, the computing entity 10 may include an antenna 712, a (e.g., radio) transmitter 704, a (e.g., radio) receiver 706, and a processing device 708 that provides signals to the transmitter 704 and receives signals from the receiver 706.

[0103] The signals provided to each transmitter 704 and received from the receiver 706 may include signaling information / data according to the air interface standard of the applicable wireless system for communicating with various entities, such as the controller 30 and other computing entities 10. In this regard, the computing entities 10 may operate using one or more air interface standards, communication protocols, modulation types, and access types. For example, the computing entities 10 may be configured to receive and / or provide communications using a wired data transmission protocol, such as Fiber Distributed Data Interface (FDDI), Digital Subscriber Line (DSL), Ethernet, Asynchronous Transfer Mode (ATM), Frame Relay, Data Over Cable Service Interface Specification (DOCSIS), or any other wired transmission protocol.Similarly, the computing entity 10 may be configured to support a variety of standards, including General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 1X (1xRTT), Wideband Code Division Multiple Access (WCDMA), Global System for Mobile communications (GSM), Enhanced Data rates for GSM Evolution (EDGE), Time Division Synchronous Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Evolved Universal Terrestrial Radio Access Network (E-UTRAN), Evolution-Data Optimized (EVDO), High-Speed ​​Packet Access (HSPA), and other standards. The device may be configured to communicate over a wireless external communications network using any of a variety of protocols, such as IEEE 802.11 (wi-fi), Wi-fi Direct, 802.16 (WiMAX), Ultra-Wide Band (UWB), Infrared Radiation (IR) protocol, Near Field Communication (NFC) protocol, Wibree, Bluetooth protocol, Wireless Universal Serial Bus (USB) protocol, and / or any other wireless protocol.The computing entity 10 may use such protocols and standards to communicate with various protocols and standards, including Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), HTTP over TLS / SSL / Secure, Internet Message Access Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Telnet, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Control Transmission Protocol (SCTP), and the like. Communication may be performed using the Internet Protocol (IIP), Hypertext Markup Language (HTML), or the like.

[0104] The above-mentioned communication standards and protocols enable computing entity 10 to communicate with various other entities using concepts such as Unstructured Supplementary Service information / data (USSD), Short Message Service (SMS), Multimedia Messaging Service (MMS), Dual-Tone Multi-Frequency Signaling (DTMF), and / or Subscriber Identity Module Dialer (SIM Dialer). Computing entity 10 may also download modifications, add-ons, and updates to its firmware, software (e.g., including executable instructions, applications, program modules), and operating system. In various embodiments, computing entity 10 further includes one or more network interfaces 720 configured to communicate over one or more wired and / or wireless networks 20.

[0105] Computing entity 10 may also include user interface devices including one or more user input / output interfaces (e.g., a display 716 and / or speakers / speaker drivers coupled to processing device 708, and a touchscreen, keyboard, mouse, and / or microphone coupled to processing device 708). For example, the user output interface may be configured to provide applications, browsers, user interfaces, interfaces, dashboards, screens, web pages, pages, and / or similar terms used interchangeably herein running on and / or accessible via computing entity 10 for causing a display or audible presentation of information / data and for interaction with that information / data via one or more user input interfaces. The user input interface may include any of a number of devices that enable computing entity 10 to receive data, such as a keypad 718 (hard or soft), a touch display, a voice / speech or motion interface, a scanner, reader, or other input device. In embodiments that include a keypad 718, the keypad 718 may include (or cause the display of) conventional numeric keys (0-9) and related keys (#, *), as well as other keys used to operate computing entity 10, and may include a full set of alphabetic keys or a set of keys that may be actuated to provide a full set of alphanumeric keys. In addition to providing input, the user input interface may be used to activate or deactivate certain features, such as a screen saver and / or sleep mode. Through such input, computing entity 10 may collect information / data, user interaction / input, etc.

[0106] Computing entity 10 may also include volatile storage or memory 722 and / or non-volatile storage or memory 724, which may be embedded and / or removable. For example, non-volatile memory may be ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, etc. Volatile memory may be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, registered memory, etc. Volatile and non-volatile storage or memory may store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, byte code, compiled code, interpreted code, machine code, executable instructions, etc. for implementing the functionality of computing entity 10.

[0107] [Conclusion] Many variations and modifications of the inventions described herein, as well as other embodiments, will come to mind to one skilled in the art to which these inventions pertain having the benefit of the teachings presented in the foregoing descriptions and the associated drawings. It is to be understood, therefore, that the inventions are not to be limited to the particular embodiments disclosed, and that modifications and other embodiments are intended to be included within the scope of the appended claims. Although specific terms have been employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation. [Explanation of symbols]

[0108] 10 Computing Entities 20 Wireless Network 30 Controllers 40 Vacuum Chamber 50 Voltage Source 52 Sort Filter 54 Arithmetic Filter 64 Operation source 64A Operation source, 1st operation source 64B Operation source, 2nd operation source 64C operation source 66 Beam Path System 66A Beam Path System 66B Beam Path System 66C Beam Path System 70 Magnetic Field Generator 70A Magnetic Field Generator, Internal Magnetic Field Generator 70B Magnetic Field Generator, External Magnetic Field Generator 80 Optical Collection System 100 systems 110 Quantum Computer 115 Quantum Processor 200 Confinement Device 210 Sort Section 210A Sorting Section, 1st Sorting Section 210B Sort Section, Second Sort Section 212 Sorting Confinement Region 216 Joint 220 Transition Zone 220A Transition Zone 220B Transition Zone 222 Transition Confinement Region 230 Arithmetic Section 232 Computational Confinement Region 234 Quantum operation position 300 Confinement Device 310 Sort Section 310A Sorting Section 310B Sorting Section 312 Sorting Confinement Region 316 Joint 320 Transition Zone 320A Transition Zone 320B Transition Zone 322 Transition Confinement Region 330 Arithmetic Section 332 Computational Confinement Region 334 Gate Location 336 Measurement position 410 Sort Section Side 412 Control electrode 412A Control electrode 412B Control electrode 412C Control electrode 414 Control Electrode 416 RF Rail 416A RF Rail 416B RF Rail 418 Longitudinal axis 430 Arithmetic Section Side 432 Control Electrode 432A Control Electrode 432B Control electrode 432C Control electrode 434 Control Electrode 436 RF Rail 436A RF Rail 436B RF Rail 438 Longitudinal Axis 605 Processing Device 610 memory 615 Driver Controller Elements 620 Communication Interface 625 Digital-to-Analog Converter 704 Transmitter 706 Receiver 708 Processing Device 712 Antenna 716 Display 718 Keypad 720 Network Interface 722 memory 724 memory

Claims

1. one or more sort sections; a calculation section; Equipped with each sort section of the one or more sort sections having a plurality of sort section radio frequency rails; the plurality of sort section radio frequency rails are configured to define a plurality of sort confinement regions configured to confine a plurality of quantum objects upon application of a sort radio frequency voltage; each sort section radio frequency rail of the plurality of sort section radio frequency rails has a sort thickness in a direction perpendicular to a longitudinal axis of the sort section radio frequency rail; the computing section having a plurality of computing section radio frequency rails; the plurality of operational section radio frequency rails are configured to define a plurality of operational confinement regions configured to confine the plurality of quantum objects upon application of an operational radio frequency voltage; each computing section radio frequency rail of the plurality of computing section radio frequency rails has a computing thickness in a direction perpendicular to a longitudinal axis of the computing section radio frequency rail; The calculated thickness is greater than the sort thickness.

2. the plurality of sort section radio frequency rails comprising a plurality of parallel sort section radio frequency rail pairs separated by sort spacings; the plurality of computing section radio frequency rails comprises a plurality of parallel computing section radio frequency rail pairs separated by computing intervals; The containment device of claim 1 , wherein the sorting interval is greater than the calculation interval.

3. the sorting confinement region is configured to confine the plurality of quantum objects at a surface distance of a quantum object confinement device that is a sorting distance; the operational confinement region is configured to confine the plurality of quantum objects at a surface distance of a quantum object confinement device that is an operational distance; The containment device of claim 1 , wherein the calculation distance is greater than the sorting distance.

4. further comprising one or more transition zones; The containment device of claim 1 , wherein each transition zone of the one or more transition zones is disposed between a processing section and each sort section of the one or more sort sections.

5. the transition zone having a plurality of transition radio frequency rails; 5. The containment device of claim 4, wherein each transition radio frequency rail of the plurality of transition radio frequency rails has a thickness that varies over the length of each transition radio frequency rail.

6. 6. The containment device of claim 5, wherein the thickness of the transition radio frequency rail is substantially equal to a sort thickness at an edge of the transition zone adjacent each of the sort sections and substantially equal to a computed thickness at an edge of the transition zone adjacent each of the sort sections.

7. 6. The containment device of claim 5, wherein the plurality of transition radio frequency rails comprises a plurality of parallel pairs of transition radio frequency rails separated by a sort separation at an end of the transition zone adjacent each of the sort sections and an operation separation at an end of the transition zone adjacent each of the operation sections.

8. 5. The confinement device of claim 4, wherein the transition zone is configured to vary a quantum object-to-confinement device surface distance of a quantum object confined by the confinement device between a sorting distance when the quantum object is at an end of the transition zone adjacent to a respective sorting section and an operation distance when the quantum object is at an end of the transition zone adjacent to an operation section.

9. the sort section comprises a plurality of sort control electrodes configured to operate according to a first noise tolerance; the calculation section includes a plurality of calculation control electrodes configured to perform calculations according to a second noise tolerance; The containment device of claim 1 , wherein the first noise tolerance is different from the second noise tolerance.

10. 10. The containment device of claim 9, wherein the sort control electrode comprises a plurality of transmit control electrodes each configured to receive a transmitted voltage signal.

11. a sort control electrode of the plurality of sort control electrodes has a sort width; an operation control electrode among the plurality of operation control electrodes has an operation width; The containment device of claim 9 , wherein the calculation width is greater than the sort width.

12. a plurality of voltage sources; A plurality of operational filters; Multiple sort filters and 1. A confinement device configured to confine a plurality of quantum objects, comprising: one or more sorting sections configured to perform a sorting function on a plurality of quantum objects; a computation section configured to perform quantum operations on one or more quantum objects therein; the containment device comprising: Equipped with each sort section of the one or more sort sections having a plurality of sort section radio frequency rails; the plurality of sort section radio frequency rails are configured to define a plurality of sort confinement regions configured to confine a plurality of quantum objects upon application of a sort section radio frequency voltage; each sort section radio frequency rail of the plurality of sort section radio frequency rails has a sort thickness in a direction perpendicular to a longitudinal axis of the sort section radio frequency rail; the computing section having a plurality of computing section radio frequency rails; the plurality of operation section radio frequency rails are configured to define a plurality of operation confinement regions configured to confine a plurality of quantum objects upon application of an operation section radio frequency voltage; each computing section radio frequency rail of the plurality of computing section radio frequency rails has a computing thickness in a direction perpendicular to a longitudinal axis of the computing section radio frequency rail; The calculated thickness is greater than the sorted thickness, the plurality of voltage sources are configured to generate respective voltage sources that are filtered by respective filters of the plurality of operational filters or the plurality of sorting filters; applying the voltage signal filtered by the operational filter to the plurality of operational section radio frequency rails; The voltage signal filtered by the sorting filter is applied to the plurality of sorting section radio frequency rails, the system.

13. The system of claim 12 , wherein the plurality of sorting filters and the plurality of operational filters have different filter responses.

14. one or more control sources; one or more beam path systems; Further preparation, the operation section defines one or more quantum operation locations; 13. The system of claim 12, wherein the one or more beam path systems are configured to provide a manipulation signal generated by each of the one or more manipulation sources to each quantum operation location.

15. 15. The system of claim 14, wherein the one or more quantum operation locations include a gate location configured to perform a quantum logic operation on one or more quantum objects and a measurement location configured to perform a measurement operation on one or more quantum objects.

16. the plurality of sort section radio frequency rails comprising a plurality of parallel sort section radio frequency rail pairs separated by sort spacings; the plurality of computing section radio frequency rails comprises a plurality of parallel computing section radio frequency rail pairs separated by computing intervals; The system of claim 12 , wherein the sorting interval is greater than the calculation interval.

17. the sorting confinement region is configured to confine the plurality of quantum objects at a surface distance of a quantum object confinement device that is a sorting distance; the operational confinement region is configured to confine the plurality of quantum objects at a surface distance of a quantum object confinement device that is an operational distance; The system of claim 12 , wherein the computational distance is greater than the sorting distance.

18. the containment device further comprising one or more transition zones; The system of claim 12 , wherein each transition zone of the one or more transition zones is disposed between the computation section and each sort section of the one or more sort sections.

19. the transition zone having a plurality of transition radio frequency rails; 20. The system of claim 18, wherein each transition radio frequency rail of the plurality of transition radio frequency rails has a thickness that varies over a length of the transition radio frequency rail.

20. the transition zones are configured to vary a quantum object-to-confinement device surface distance of the quantum objects confined by the confinement device between a sorting distance when the quantum objects are at an end of the transition zone adjacent to each of the sorting sections and a computation distance when the quantum objects are at an end of the transition zone adjacent to each of the computation sections; 20. The system of claim 18, wherein the change in quantum object-to-surface confinement device distance of the quantum object is intermittent.

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