Electronic components, electrical insulation method and device

Abstract

The present invention relates to an electronic component (100) comprising at least one layer (120) in the form of an electrode or semiconductor layer structured with at least one first trench (101) and a second trench (102). The at least one layer has two regions (120.1, 120.2) that are continuously electrically isolated from one another. The present invention also relates to a method for structuring and electrically isolating from one another the two regions (120.1, 120.2) of the layer (120) of the electronic component (100) and a device therefor.

Description

[Technical Field]

[0001] The present invention relates to an electronic component comprising at least one layer in the form of an electrode layer or a semiconductor layer structured with at least one first trench and at least one second trench, the at least one layer having two regions that are continuously electrically isolated from one another, a method for structuring and electrically isolating two regions of a layer of an electronic component from one another, and a device therefor. The invention is particularly suitable for laser structuring in the case of optoelectronic components. [Background technology]

[0002] Optoelectronic components include in particular systems that allow the conversion of electronically generated energy into luminescence or systems that convert luminescence into energy: photovoltaic devices (OPVs) generate electrical energy and organic light-emitting diodes (OLEDs) convert electrical energy into luminescence.

[0003] Organic optoelectronic components, particularly organic photovoltaics or organic light-emitting diodes, consist of an arrangement of thin layers with at least one photoactive layer, which are preferably deposited in a vacuum or processed from solution. Electrical connections can be achieved via metal layers, transparent conductive oxides, and / or transparent conductive polymers. German Patent Application No. 102004014046 discloses photoactive components, particularly solar cells, consisting of organic layers of one or more pI, nI, and / or pI diodes stacked on top of each other.

[0004] Organic optoelectronic components consist of multiple semiconductor and metal layers, which must be structured during the manufacturing process to create individual regions within these layers that are electrically isolated from one another. In organic photovoltaic devices, the P1 / P2 / P3 structuring of the photovoltaic cell electrodes and layer structure is important, with the layer structure containing the photoactive layer positioned between the first and second electrode layers. In this case, the P1 trench interrupts the first electrode layer, the P3 trench interrupts the second electrode layer, and the P2 trench interrupts the layer structure, allowing the multiple photovoltaic cell electrode layers to be ohmically connected to one another.

[0005] For structuring, methods are known in which individual regions, for example regions electrically isolated from one another by trenches, are created in a layer by polishing, i.e., material removal. Material removal can be carried out, inter alia, using a laser beam, an electron beam, or an ion beam. So-called scanner units are known for deflecting and specifically directing a laser beam to the surface of a layer. Such scanner units can guide the laser beam along a predetermined path, hereinafter referred to as a virtual target line.

[0006] Because the working range of such scanner units is limited, the layer to be structured may need to be structured in parts, i.e., in multiple work steps, and the substrate carrying the layer is moved continuously or stepwise by a moving unit, especially in a roll-to-roll process. In the production of photovoltaic elements, elongated insulating trenches extending along predetermined imaginary target lines are required in electrode and semiconductor layers. For technical reasons, such elongated insulating trenches must be composed of individual shorter trenches. To avoid short circuits between regions electrically isolated by the elongated insulating trenches, the individual shorter trenches must be aligned so that they overlap. Due to, for example, tolerance variations in the moving unit during such processes, the individual shorter trenches may actually slightly deviate laterally from the predetermined imaginary target line in each case, which may result in the trenches not overlapping or not forming a continuous insulating trench, which may result in short circuits between regions that should actually be electrically isolated during subsequent operation of the electronic component.

[0007] To avoid such short circuits, it is known to create short lateral trenches in the layer at the interface of each shorter trench, which run perpendicular to these trenches. WO 2011 / 017571 and EP 3780122 describe methods for ensuring the electrical isolation of individual solar cells of a solar module by introducing lateral trenches at the interface of trenches formed parallel to an imaginary target line.

[0008] However, a drawback of the prior art is that due to random variations in the substrate movement by the moving unit, individual trenches are formed partially on top of each other, resulting in the layer at the trench seam being subjected to the polishing process twice. By creating lateral trenches, material is removed three times at the trench intersection. Therefore, there is a risk that the underlying layer at this location will also be unintentionally cut or at least damaged. Summary of the Invention [Problem to be solved by the invention]

[0009] The present invention is therefore based on the object of providing an electronic component having a structured layer with regions that are continuously electrically isolated from one another, a method and a device for electrical isolation, which do not suffer from the aforementioned disadvantages, and in particular, an insulating trench that extends continuously substantially along a predetermined imaginary target line and is composed of a plurality of trenches, which reliably reduces multiple wear compared to the prior art, and as a result provides reliable electrical isolation of the regions of the layer separated by the insulating trenches. [Means for solving the problem]

[0010] This object is achieved by the subject matter of the independent claims. Advantageous embodiments can be found in the dependent claims.

[0011] This object is achieved in particular by providing an electronic component comprising a substrate having at least one electrode layer and / or one semiconductor layer, hereinafter generally referred to as a "layer," where at least one layer is structured, in particular laser-structured, with at least one first trench and one second trench along a virtual target line, where the rear end region of the first trench directly intersects with the front end region of the second trench, or where an additional third trench arranged laterally relative to the virtual target line, hereinafter referred to as a "lateral trench," intersects with the rear end region of the first trench and the front end region of the second trench, where the linear region of the first trench and the linear region of the second trench each have an inclination angle relative to the virtual target line, or where the first trench and / or the second trench have at least one non-linear front end region and / or one non-linear rear end region. Due to the arrangement or shape of the trenches, at least one layer has two regions that are continuously electrically isolated from each other. Preferably, at least one first trench, at least one second trench, at least one first trench, at least one second trench and at least one lateral trench are formed throughout the layer, which means that there are two horizontally extending regions within the layer that are electrically isolated from each other.

[0012] An electrode layer is understood in particular to be a layer in the plane of an electronic component which has conductive regions for supplying charge carriers to or emitting charge carriers from other (e.g. semiconducting) regions of the electronic component. A semiconducting layer is understood in particular to be a layer which mainly comprises or consists entirely of one or more semiconducting materials and therefore has semiconducting properties, or to be a transport, injection or photoactive layer in the layer structure of an optoelectronic component.

[0013] A trench is understood to mean in particular a groove-like recess in a layer, the depth of which preferably corresponds to the thickness of the layer into which the trench is introduced, so that individual regions of the layer are separated from one another by trenches.

[0014] The term "virtual target line" particularly defines a predetermined line course on the surface of a layer, i.e., an electrode layer or a semiconductor layer, along which an electrically insulating trench structure is to be formed in the layer. In this case, the target line defines an ideal course of the electrically insulating trench structure, which, however, can rarely be maintained when creating the trench, e.g., due to technological limitations and / or parameter deviations. The virtual target line is therefore a virtual specification to which the actual course of the created trench structure substantially approximates.

[0015] The term "structuring" refers in particular to the formation of structures by ablation of the layer material with the formation of trench structures, whereby distinct regions of the layer are formed. Ablation of the layer material can be carried out using an energy beam or a particle beam. Structuring is preferably carried out using a laser in pulsed or continuous operation.

[0016] In the context of the present invention, the term "intersect" is used in the sense of geometrical notation, where two intersecting lines have a point of intersection or an area of ​​intersection. Thus, two trenches that intersect each other have a common area where the two trenches intersect or partially overlap, and preferably this common area is approximately point-like.

[0017] "Non-linear" front end region and "non-linear" rear end region are understood to mean in particular regions that are non-linear with respect to the linear region, i.e. regions that are not themselves linear with respect to the linear region, where the non-linear end region itself may be linear, arcuate or angled.

[0018] The term "end region" refers to the portion of a trench or line at its longitudinal beginning or end. The end region is only a portion of the trench or line, preferably up to one-third of the total length of the trench or line. Thus, a trench or line can be divided into a front end region, a central region, and a rear end region.

[0019] The tilt angle represents the angle formed between the linear region of the trench and the virtual target line. If the trench or linear region of the trench runs parallel to the virtual target line, the tilt angle is 0°. If the linear region of the trench is tilted, or rotated, clockwise relative to the virtual target line, the tilt angle is greater than 0°. If the trench is tilted, or rotated, counterclockwise relative to the virtual target line, the tilt angle is less than 0°.

[0020] The trench may have one or more linear regions. Alternatively, the trench may be completely linear. If the trench has two or more linear regions, the linear portion of the central region of the trench is used to represent the tilt angle. Preferably, the central region of the trench is linear, i.e., the trench preferably has at least one linear central region. If the trench is completely non-linear, i.e., the trench does not have a linear central region, the tilt angle is defined as the angle between the imaginary target line and a line passing through the two longitudinal end points of the non-linear trench.

[0021] The term "non-linear" refers in particular to a deviation from straightness, preferably to an arcuate course of a line or trench, not only any arcuate course but also (possibly multiple) angled courses, i.e., twisted courses. If a trench has a non-linear end region, the trench is, for example, angled (twisted) or curved at its end region. If a trench has at least one non-linear end region, it is possible to provide a configuration in which the trench has one non-linear end region, two non-linear end regions, or an overall non-linear course, i.e., is, for example, completely arcuate or S-shaped.

[0022] The electronic component according to the invention has advantages over the prior art. Advantageously, when a layer is laser-structured, the surface area of ​​the underlying layer that is damaged is minimized. Due to the special arrangement of the structuring, in particular the arrangement, i.e., rotation, of the first and second trenches relative to the virtual target line or the non-linear design of the end regions of the first and / or second trenches, multiple processing of the layer at the overlapping positions of the trenches, i.e., multiple ablation of the layer material, is reduced. Advantageously, a continuous insulating trench made up of multiple trenches ensures reliable electrical isolation between regions of the layer. The electrical dead zone in the vicinity of the trench is not substantially increased, especially compared to the prior art.

[0023] According to one development of the invention, the rear end region of the first trench directly intersects with the front end region of the second trench, and the first and second trenches have their linear regions with the same inclination angle relative to the imaginary target line and have non-linear front and / or rear end regions. Thus, the first and second trenches are formed so that their linear regions are, in particular, parallel to each other. Thus, in each case, in a row of trenches, there is a common intersection or crossing region between the front end region of one trench and the rear end region of the other trench immediately preceding it. Advantageously, this development can eliminate the need for lateral trenches.

[0024] According to one development of the invention, it is provided that the rear end region of a first trench directly intersects with the front end region of a second trench, the first trench having an inclination angle relative to the imaginary target line that differs from the inclination angle of the second trench relative to the imaginary target line. In a series of trenches arranged one after the other, each trench has a different inclination angle relative to the imaginary target line compared to its neighboring trench. In particular, the inclination angle according to this development can assume the value zero, or alternatively, in particular, the inclination angle can only assume values ​​greater than zero, preferably greater than 1°, preferably greater than 2°, or preferably greater than 5°.

[0025] In this case, the trench can have one or two non-linear end regions. However, the trench can also be completely linear, i.e., the non-linear end regions can be omitted. In particular, a configuration can be provided in which one trench, e.g., a first trench, has one or two non-linear end regions, and a trench arranged adjacent to the first trench in a row, e.g., a second trench, is designed to be completely linear. If the first and second trenches are completely linear, the inclination angles of the adjacent trenches relative to the virtual target line preferably have different signs. In particular, the trenches can be arranged in a zigzag pattern along the virtual target line. Advantageously, in this development, lateral trenches can be omitted, whereby the layer undergoes double ablation only at the intersections of the first and second trenches.

[0026] According to one further development of the invention, a lateral trench is further arranged transversely to the virtual target line, the lateral trench intersecting the rear end region of the first trench and the front end region of the second trench, the linear regions of the first trench and the second trench having the same inclination angle to the virtual target line, the first trench and / or the second trench having a non-linear front end region and / or a non-linear rear end region. In a preferred embodiment, the inclination angle of the linear regions of the first trench and the second trench to the virtual target line is greater than zero, i.e., they are inclined to the virtual target line.

[0027] According to one development of the invention, it is provided that the first trench and / or the second trench in each case have a non-linear front end region and / or a non-linear rear end region and a linear region between the front end region and the rear end region, and that the non-linear front end region and / or the non-linear rear end region of the first trench and / or the second trench are angled or arc-shaped relative to the respective linear region.

[0028] Preferably, the end region angle of the non-linear front end region and / or the non-linear rear end region is between 10° and 90°, preferably between 10° and 70°. Thus, at least one end region of the first and / or second trench is non-linear, such that a tangent passing through an end point of a linear region of the trench, e.g., an angled end region or an arcuate end region relative to a linear central region, has an end region angle of at least 10°, preferably at most 90°, preferably 70°, relative to the linear region of the respective trench. In this case, the end region angle is based on an imaginary extension of the linear region of the trench, e.g., the linear central region, in the direction of the end region, i.e., the angle between the imaginary extension of the linear region of the trench and a tangent passing through an end point of the angled end region or arcuate end region defines the end region angle.

[0029] In a preferred embodiment of the present invention, the inclination angle of the first trench and / or the second trench relative to the virtual target line is -15° to 15°, preferably the inclination angle of the first trench and / or the second trench relative to the virtual target line is -10° to 10°, preferably -5° to 5°, preferably -2° to 2°, preferably -1° to 1°, or preferably -0.3° to 0.3°, excluding the value 0°, preferably excluding the value -0.2° to 0.2°, preferably -0.1° to 0.1°, preferably -0.05° to 0.05°, or preferably -0.02° to 0.02°.

[0030] According to one development of the invention, the inclination angle of the first trench and / or the second trench relative to the virtual target line is between -15° and 15°, preferably between -10° and 10°, preferably between -5° and 5°, preferably between -2° and 2°, preferably between -1° and 1° or preferably between -0.3° and 0.3°, in particular including here the value 0°.

[0031] According to one development of the invention, it is provided that at least one lateral trench is straight, arc-shaped or angled, thereby ensuring that the lateral trench intersects the first and second trenches.

[0032] According to one development of the invention, it is provided that the width of the first trench, the second trench and / or the lateral trench is at least 20 μm and at most 200 μm, preferably at least 30 μm and at most 150 μm, preferably at least 40 μm and at most 120 μm, or preferably at least 50 μm and at most 100 μm.

[0033] According to one development of the invention, it is assumed that the absolute value of the tilt angle of the first trench corresponds to the absolute value of the tilt angle of the second trench. The absolute value of the tilt angle should be understood here in a mathematical sense, whereby the absolute value of a real number is always greater than (or equal to) zero, and preferably, the absolute value of the tilt angle is always a real number greater than zero. Thus, the tilt angle of the first trench is identical to the tilt angle of the second trench, or the two trenches have the same value for the tilt angle but different signs. Thus, the first and second trenches are arranged substantially parallel to each other or are tilted, i.e., rotated, by twice the tilt angle.

[0034] According to one development of the invention, it is assumed that the first and second trenches, or the first, second, and lateral trenches, are repeated along a virtual target line throughout the entire layer. Thus, throughout the entire layer along the virtual target line, the second trench follows the first trench, which in turn follows the first trench, and so on. In particular, if the first and second trenches do not have a common intersection, it is possible to optionally place a lateral trench at the junction between the first and second trenches and / or between the second and first trenches, intersecting the two trenches. Thus, the alternating juxtaposition of the first and second trenches with the lateral trenches forms a continuous insulating trench consisting of multiple trenches extending horizontally throughout the entire layer, in particular across the entire layer, electrically isolating the regions of the layer separated by the insulating trenches from each other. This prevents short circuits between the regions of the layer separated by the insulating trenches.

[0035] The electronic component according to the invention may be an optoelectronic component, preferably a photovoltaic device, particularly preferably a flexible photovoltaic device, in particular a flexible organic photovoltaic device, comprising at least one layer. The at least one layer may be an electrode layer or a semiconductor layer in the layer structure of the optoelectronic component, preferably a photovoltaic device, particularly preferably a flexible photovoltaic device, in particular a flexible organic photovoltaic device.

[0036] Optoelectronic components are understood to mean, in particular, electronic components having at least one photoactive layer, preferably an organic photoactive layer. Photovoltaic devices are understood to mean an arrangement of multiple photovoltaic cells, in particular solar cells. In a preferred embodiment, the cells of the photovoltaic device are arranged adjacent to each other and connected in series. Photovoltaic devices utilize the photoelectric effect to convert electromagnetic radiation, especially in the wavelength range of visible light, into electric current.

[0037] The photovoltaic device comprises as at least one semiconducting layer at least one transport layer and / or one photoactive layer, preferably an organic photoactive layer made from organic polymers or organic small molecules with a monodisperse molar mass between 100 and 2000 g / mol.

[0038] A flexible optoelectronic component is understood to mean in particular an optoelectronic component which is bendable and / or stretchable at least in areas.

[0039] The object of the present invention is also achieved by providing a method for electrically insulating two regions of a layer formed as an electrode layer or a semiconductor layer of an electronic component, the method comprising: a) providing a substrate having a layer formed as an electrode layer or a semiconductor layer; b) forming a first trench in the layer substantially along a virtual target line with at least one laser, wherein a laser beam of the at least one laser is deflected using at least one scanner; c) forming second trenches in the layer substantially along the virtual target line by at least one laser, the laser beam of which is deflected by at least one scanner, wherein a back end region of the first trench directly intersects a front end region of the second trench, or wherein a lateral trench additionally formed in the layer laterally to the virtual target line by the at least one laser intersects the back end region of the first trench and the front end region of the second trench, and wherein the linear region of the first trench and the linear region of the second trench have an inclination angle to the virtual target line, or the first trench and / or the second trench have at least one non-linear front end region and / or non-linear back end region; d) obtaining a continuous laser structuring along the imaginary target line, the layer having two electrically isolated regions.

[0040] According to one development of the invention, it is provided that in step c1), lateral trenches are formed transversely to the imaginary target line by at least one laser before or after step c).

[0041] In a preferred embodiment of the present invention, the first trench and the second trench, preferably the first trench, the second trench and the lateral trench, are formed by a laser beam of a laser, which may be deflected by one or more scanners.

[0042] According to one development of the invention, steps b) and c), preferably steps b), c) and c1), are repeated along the virtual target line over the entire extent of the layer, the method preferably being used in a roll-to-roll process.

[0043] This method can be used in particular to create electrically isolated regions in the electrode and / or semiconductor layers of flexible photovoltaic modules, preferably comprising multiple photovoltaic cells connected in series.

[0044] The object of the present invention is also achieved by providing an apparatus for carrying out the method having the above-mentioned features, the apparatus comprising at least one laser generating a laser beam for forming at least one first trench, a second trench, and / or a lateral trench in at least one layer of an electronic component, at least one scanner for deflecting the laser beam on a surface of the layer to form an arrangement of the at least first trench, the second trench, and / or the lateral trench relative to one another in the layer, and at least one control device for adjusting parameters of the at least one laser and parameters of the at least one scanner.

[0045] In a preferred embodiment of the present invention, the energy or power density of the at least one laser is reduced in the trench end region by a control device for adjusting parameters of the at least one laser, which can be reduced continuously as a function of distance to the trench end point or can be reduced in stages after reaching the trench end region.

[0046] Preferably, the apparatus comprises two lasers, each of which splits its laser beam into two beam paths. The apparatus has a scanner for each beam path, allowing a total of four scanning areas on the surface of the layer to be processed independently of each other. At least one scanner of the apparatus may comprise one or two galvanometer mirrors, i.e., mirrors moved by galvanometer drives. Lasers with wavelengths in the ranges of 510 nm to 532 nm and / or 1020 nm to 1064 nm are preferably used. Furthermore, nonlinear optical elements may be provided that allow the frequency of the laser beam of at least one laser to be doubled or tripled.

[0047] The control device for adjusting the parameters of the at least one laser and the parameters of the at least one scanner is configured in particular to move and preferably deflect a laser beam of the at least one laser across the surface of the at least one layer of the electronic component at a speed in the range of 1 m / s to 20 m / s.

[0048] The apparatus may further comprise at least one lens or focusing unit for the laser beam of the at least one laser, which is capable of focusing the laser beam on the surface of the at least one layer of the electronic component to form a laser spot having a diameter preferably in the range of 50 to 100 μm.

[0049] The invention will now be described in more detail with reference to the drawings, in which like or similar features are designated with the same reference numerals. [Brief explanation of the drawings]

[0050] [Figure 1] FIG. 1 is a schematic diagram of an embodiment of an electronic component having a layer structure in a perspective view. [Figure 2] FIG. 1 is a plan view of a schematic diagram of one embodiment of a placement of trenches in a layer of an electronic component. [Figure 3] FIG. 1 is a plan view of a schematic diagram of one embodiment of a placement of trenches in a layer of an electronic component. [Figure 4] FIG. 1 is a plan view of a schematic diagram of one embodiment of a placement of trenches in a layer of an electronic component. [Figure 5] FIG. 1 is a plan view of a schematic diagram of one embodiment of a placement of trenches in a layer of an electronic component. [Figure 6] FIG. 1 is a plan view of a schematic diagram of one embodiment of a placement of trenches in a layer of an electronic component. [Figure 7] FIG. 1 is a plan view of a schematic diagram of one embodiment of a placement of trenches in a layer of an electronic component. [Figure 8] FIG. 1 is a plan view of a schematic diagram of one embodiment of a placement of trenches in a layer of an electronic component. [Figure 9] FIG. 1 is a plan view of a schematic diagram of one embodiment of a placement of trenches in a layer of an electronic component. [Figure 10] FIG. 1 is a plan view of a schematic diagram of one embodiment of a placement of trenches in a layer of an electronic component. [Figure 11] FIG. 1 is a plan view of a schematic diagram of one embodiment of a placement of trenches in a layer of an electronic component. DETAILED DESCRIPTION OF THE INVENTION

[0051] 1 shows, in perspective view, a schematic diagram of one embodiment of an electronic component 100 having a layer structure. The embodiment shown here is specifically an optoelectronic component 100 fabricated in a roll-to-roll process.

[0052] The electronic component 100 comprises a first layer 115, such as an electrode layer or a layer of a layer structure arranged between two electrodes, such as a transport layer, an injection layer, or a photoactive layer, on a substrate 110. On the first layer 115 is arranged a layer 120, such as an electrode layer or a semiconductor layer, having two regions 120.1 and 120.2 that are continuously electrically isolated from each other.

[0053] In this embodiment, layer 115 is an electrode layer, and layer 120, which is divided into two regions 120.1 and 120.2, is a semiconductor layer. A trench 101 is formed in layer 120 to electrically isolate layer 120 from each other in the two regions 120.1 and 120.2. Trench 101 is formed in layer 120 along a virtual target line 200 by a pulsed laser, where a pulsed laser beam with a pulse duration of less than 10 ps is deflected by a scanner, here a laser scanner with a galvano drive.

[0054] In FIG. 1, only the first trench 101 for separating the layer 120 into regions 120.1 and 120.2 is shown. For the extended layer 120, due to the spatially limited operating range of the laser and / or scanner, multiple trenches must be formed one after the other along the virtual target line 200 (see FIGS. 2-11). To ensure electrical isolation between the two regions 120.1 and 120.2, the trenches in the layer 120 must overlap, i.e., intersect, at the seams, or be "connected" to each other by a third lateral trench formed transverse to the virtual target line, which intersects with the end regions of the adjacent trenches. Furthermore, to ensure electrical isolation between the two regions 120.1 and 120.2, the trenches must be formed completely through the layer 120.

[0055] 2-11 each show, in plan view, a schematic diagram of one embodiment of the placement of trenches 101, 102, and / or 104 in layer 120 of electronic component 100. FIG.

[0056] 2 shows, in one embodiment, two first trenches 101 and a second trench 102 disposed between the two first trenches 101. The trenches 101 and 102 are disposed substantially along a virtual target line 200. Furthermore, the trenches 101 and 102 are rotated by an inclination angle relative to the virtual target line 200. In this example, the inclination angle of the first trench 101 and the second trench 102 is 5°. The inclination angle of 5° in each case was selected to better illustrate the rotation of the first trench 101 and the second trench 102 relative to the virtual target line 200. For the electronic component 100, an inclination angle of preferably up to 1° should be selected.

[0057] Due to the alignment of the first trench 101 and the second trench 102 by an inclination angle relative to the virtual target line 200, the rear end region 101.2 of the first trench 101 and the front end region 102.1 of the second trench 102 do not overlap each other. Between the rear end region 101.2 of the first trench 101 and the front end region 102.1 of the second trench 102, there is a gap in the trench system, which is filled, i.e., closed, by a linearly formed lateral trench 104 that is additionally arranged laterally relative to the virtual target line 200. The lateral trench 104 intersects the first trench 101 at its rear end region 101.2 and intersects the second trench 102 at its front end region 102.1. The further lateral trench 104 intersects the second trench 102 in its rear end region 102.2 and intersects the trench 101, which is arranged below the second trench 102 in Figure 2, in its front end region 101.1. The trenches 101, 102, 104 are all straight.

[0058] FIG. 3 shows, in a plan view, the arrangement of trenches 101 and 102 in layer 120 of electronic component 100 in one embodiment. In this embodiment, trenches 101 and 102 are also rotated by a tilt angle relative to virtual target line 200. In this example, first trench 101 is rotated clockwise (the tilt angle is positive), and second trench 102 is rotated counterclockwise (the tilt angle is negative). This creates a zigzag pattern of trench arrangement. The rear end region 101.2 of first trench 101 intersects with the front end region 102.1 of second trench 102 in each case, and the rear end region 102.2 of second trench 102 intersects with the front end region 101.1 of first trench 101 in each case. This arrangement of trenches 101 and 102 forms a continuous isolation trench along virtual target line 200. In this example, trenches 101 and 102 are also perfectly straight.

[0059] 4 shows an embodiment of an arrangement in which trenches 101 and 102 are not perfectly straight. The end regions 101.1 and 101.2 of the first trench 101 and the end regions 102.1 and 102.2 of the second trench 102 are non-linear, in particular angled. The trenches 101 and 102 intersect in each case at the angled end regions 101.1, 101.2, 102.1, 102.2, where the rear end region 101.2 of the first trench 101 intersects with the front end region 102.1 of the second trench 102, and the rear end region 102.2 of the second trench 102 intersects with the front end region 101.1 of the first trench 101. However, due to technical defects, the trenches 101 and 102 are not located exactly on the imaginary target line 200. The linear central regions of trenches 101 and 102, respectively, are aligned parallel to imaginary target line 200, ie, the tilt angle here is 0°.

[0060] 5 shows a further embodiment in which the trenches 101 and 102 are not perfectly straight. The end regions 101.1 and 101.2 of the first trench 101 and the end regions 102.1 and 102.2 of the second trench 102 are non-linear, in particular curved. Due to the curved end regions 101.1, 101.2, and 102.1, 102.2, the trenches 101 and 102 intersect in each case at their end regions 101.2 and 102.1 or 102.2 and 101.1, but again for technical reasons, the trenches 101 and 102 do not lie exactly on the virtual target line 200. The linear central regions of the trenches 101 and 102, respectively, are aligned parallel to the virtual target line 200, i.e., the inclination angle is zero in each case.

[0061] 6 shows, in one embodiment, a series of first trenches 101 and second trenches 102 extending along a virtual target line 200, where the first trenches 101 and second trenches 102 are formed completely non-linearly. In this example, the first trenches 101 and second trenches 102 are both arc-shaped. The first trenches 101 and second trenches 102 each intersect at their end regions, thereby forming a continuous insulating trench extending along the virtual target line 200. In this case, the first trenches 101 and second trenches 102 are aligned "parallel" to each other, i.e., they have the same inclination angle, here 0°.

[0062] Figure 7 substantially corresponds to the embodiment of Figure 2, in which the lateral trench 104 is not linear, but rather arc-shaped. The first trench 101 and the second trench 102 have the same inclination angle relative to the imaginary target line 200 and are perfectly linear.

[0063] 8 shows a first trench 101 and a second trench 102, which are non-linearly formed in one embodiment. The trenches 101 and 102 have a serpentine shape, with the shape of the first trench 101 being a mirror image of the shape of the second trench 102. Due to this shape and arrangement, the first trench 101 and the second trench 102 intersect in each case at their (non-linear) end regions 101.1, 101.2 and 102.1, 102.2. The end points (i.e., the start and end points) of the first trench 101 and the second trench 102 are located substantially on the imaginary target line 200, so that the inclination angles of the first trench 101 and the second trench 102 are 0°.

[0064] 9 shows a further embodiment in which the first trench 101 is non-linear in its end regions 101.1 and 101.2, while the second trench 102 is perfectly linear, particularly in its two end regions 102.1 and 102.2. The non-linear end regions 101.1 and 101.2, in this example the angled end regions 101.1 and 101.2, intersect with trenches 102 located in front of and behind the first trench 101, respectively. To ensure intersections between the front end region 101.1 of the first trench 101 and the second trench 102, and between the rear end region 101.2 of the first trench 101 and the second trench 102, the first trench 101 and / or the second trench 102 are offset laterally with respect to the imaginary target line 200, by 15 micrometers in this embodiment. Moreover, the first trench 101 and the second trench 102 each have an inclination angle of 0°.

[0065] FIG. 10 shows an embodiment similar to that of FIG. 9, according to which the first trench 101 has an arcuate front end region 101.1 and an arcuate rear end region 101.2.

[0066] 11 shows an embodiment in which the first trench 101 is completely non-linear in each case, while the second trench 102 is completely linear in each case. The first trench 101 and the second trench 102 intersect at their respective end regions 101.2 and 102.1, and 102.2 and 101.1. Again, the inclination angles of the first trench 101 and the second trench 102 are 0° in each case.

Claims

1. The electronic component (100) comprises a substrate (110) having at least one layer (120) in the form of an electrode layer or a semiconductor layer, the at least one layer (120) being structured, in particular laser-structured, with at least one first trench (101) and one second trench (102) along a virtual target line (200), the rear end region (101.2) of the first trench (101) directly intersecting with the front end region (102.1) of the second trench (102) or an additional lateral trench (104) arranged laterally with respect to the virtual target line (200) intersecting with the rear end region (101.2) of the first trench (101) and the front end region (102.1) of the second trench (102), the linear region of the first trench (101) and the linear region of the second trench (102) each have an inclination angle with respect to the virtual target line (200); or the first trench (101) and / or the second trench (102) have at least one non-linear front end region (101.1, 102.1) and / or one non-linear rear end region (101.2, 102.2), An electronic component (100), characterized in that said at least one layer (120) comprises two regions (120.1, 120.2) that are continuously electrically insulated from one another.

2. 2. The electronic component (100) of claim 1, wherein the rear end region (101.2) of the first trench (101) directly intersects the front end region (102.1) of the second trench (102), and the first trench (101) and the second trench (102) have linear regions with the same inclination angle relative to the imaginary target line (200) and have non-linear front end regions (101.1, 102.1) and / or non-linear rear end regions (101.2, 102.2).

3. 2. The electronic component (100) of claim 1, wherein the rear end region (101.2) of the first trench (101) directly intersects the front end region (102.1) of the second trench (102), and the first trench (101) has an inclination angle with respect to the imaginary target line (200) that is different from an inclination angle of the second trench (102) with respect to the imaginary target line (200).

4. 2. The electronic component according to claim 1, wherein the additional lateral trenches arranged laterally with respect to the virtual target line intersect the rear end region of the first trench and the front end region of the second trench, the linear regions of the first trench and the second trench having the same inclination angle with respect to the virtual target line, and the first trench and / or the second trench have non-linear front end regions and / or non-linear rear end regions.

5. 2. The electronic component (100) according to claim 1, wherein the first trench (101) and / or the second trench (102) have in each case a non-linear front end region (101.1, 102.1) and / or a non-linear rear end region (101.2, 102.2) and a linear region between the front end region (101.1, 102.2) and the rear end region (101.2, 102.2), and wherein the non-linear front end region (101.1, 102.1) and / or the non-linear rear end region (101.2, 102.2) of the first trench (101) and / or the second trench (102) are angled or arcuate with respect to the respective linear region.

6. The electronic component (100) according to any one of claims 1 to 5, wherein the inclination angle of the first trench (101) and / or the second trench (102) relative to the virtual target line (200) is between -15° and 15°.

7. The electronic component (100) of any one of claims 1 to 5, wherein the lateral trench (104) is straight, arcuate, or angled.

8. The electronic component (100) according to any one of the preceding claims, wherein the width of the first trench (101), the second trench (102) and / or the lateral trench (104) is between 50 μm and 100 μm.

9. The electronic component (100) according to any one of claims 1 to 5, wherein the absolute value of the tilt angle of the first trench (101) corresponds to the absolute value of the tilt angle of the second trench (102).

10. 6. The electronic component (100) according to claim 1, wherein the first trench (101) and the second trench (102), or the first trench (101), the second trench (102), and the lateral trench (104) are repeated along the imaginary target line (200) throughout the entire extent of the layer (120).

11. 6. The electronic component (100) according to any one of claims 1 to 5, wherein the at least one layer (120) is an electrode layer or a semiconductor layer of a layer structure of an optoelectronic component, preferably a photovoltaic device, particularly preferably a flexible photovoltaic device.

12. A method for electrically insulating two regions (120.1, 120.2) of a layer (120) formed as an electrode layer or a semiconductor layer of an electronic component (100), preferably an electronic component (100) according to any one of claims 1 to 5, comprising: a) providing a substrate (110) having said layer (120); b) forming a first trench (101) in said layer (120) substantially along an imaginary target line (200) by at least one laser, wherein a laser beam of said at least one laser is deflected by at least one scanner; c) forming a second trench (102) in the layer (120) by the at least one laser substantially along the virtual target line (200), wherein the laser beam of the at least one laser is deflected by the at least one scanner so that a rear end region (101.2) of the first trench (101) directly intersects with a front end region (102.1) of the second trench (102) or a lateral trench additionally formed in the layer (120) laterally to the virtual target line (200) by the at least one laser. a trench (104) intersecting the back end region (101.2) of the first trench (101) and the front end region (102.1) of the second trench (102), wherein the linear region of the first trench (101) and the linear region of the second trench (102) have an inclination angle with respect to the imaginary target line (200), or the first trench (101) and / or the second trench (102) have at least one non-linear front end region (101.1, 102.1) and / or non-linear back end region (101.2, 102.2); d) obtaining a continuous laser structuring along said imaginary target line (200), wherein said layer (120) has two regions (120.1, 120.2) electrically isolated from each other.

13. 13. The method of claim 12, wherein the lateral trenches (104) are formed in step c1) transverse to the virtual target line (200) by the at least one laser before or after step c).

14. 13. The method according to claim 12, wherein steps b) and c), or steps b), c), and c1) are repeated along the imaginary target line (200) over the entire extent of the layer (120), and the method is preferably used in a roll-to-roll process.

15. 13. An apparatus for performing the method of claim 12, comprising: at least one laser generating a laser beam for forming at least one first trench (101), second trench (102), and / or lateral trench (104) in at least one layer (120) of an electronic component (100); at least one scanner for deflecting the laser beam on a surface of the layer (120) to form an arrangement of at least the first trench (101), second trench (102), and / or lateral trench (104) relative to one another in the layer (120); and at least one control device for adjusting parameters of the at least one laser and parameters of the at least one scanner.

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