Perovskite batteries and power consumers

Abstract

The present application discloses a perovskite battery and a power consuming device, the perovskite battery comprising: a substrate; a perovskite layer disposed on one side of the substrate; a passivation layer disposed on at least one side of the perovskite layer, the passivation layer comprising a passivation material, the passivation material comprising anions and cations, a volume of the anions being V1 and a volume of the cations being V2, V1 > V3 > V2, where V3 is the volume of the largest defect in the perovskite layer; and an electrode layer disposed on a side of the passivation layer facing away from the perovskite layer.

Description

[Technical Field]

[0001] This application relates to the field of battery technology, and in particular to perovskite batteries and power consuming devices. [Background technology]

[0002] Perovskite cells have attracted widespread attention due to their excellent photoelectric properties, including tunable band gaps, high optical absorption coefficients, long carrier lifetimes and diffusion lengths, high defect tolerance, and low-cost, low-temperature liquid-phase fabrication methods. In just a few decades, the efficiency of perovskite cells has increased from 3.8% to over 25%, demonstrating their enormous potential. However, defects are easily generated during the fabrication of perovskite cells, leading to rapid anion migration at defect sites, which affects the long-term stability of perovskite cells. Summary of the Invention [Means for solving the problem]

[0003] In view of the technical problems existing in the background art, the present application provides a perovskite battery for inhibiting the migration of anions in a perovskite layer and improving the long-term stability of the perovskite battery.

[0004] A first aspect of the present application provides a perovskite battery, the battery comprising: a substrate; a perovskite layer provided on one side of the substrate; a passivation layer provided on at least one side of the perovskite layer, the passivation layer comprising a passivation material, the passivation material comprising anions and cations, a volume of the anions being V1 and a volume of the cations being V2, V1 > V3 > V2, where V3 is a volume of the largest defect in the perovskite layer; and an electrode layer provided on a side of the passivation layer facing away from the perovskite layer.

[0005] In the perovskite battery according to the present application, when a passivation layer is provided between the perovskite layer and the electrode layer, V1>V2, so that cations with small volumes in the passivation layer are easy to move, and anions with large volumes in the passivation layer are difficult to move, and a potential barrier is formed between the anions in the passivation layer and the cations in the passivation layer, reducing the probability that anions in the perovskite layer pass through the passivation layer; and V1>V3, so that anions in the passivation layer cannot enter the perovskite layer through defect sites, and so the passivation layer is free to move. The passivation layer can reduce the risk of anions in the perovskite layer entering the perovskite layer, forming a region with a high negative charge concentration on the surface of the passivation layer close to the perovskite layer, further reducing the migration of anions on the perovskite layer surface to the electrode layer, thereby reducing the probability of anions on the perovskite layer surface and within the perovskite layer migrating to and reacting with the electrode layer, improving the long-term stability of the perovskite battery; V3 > V2, and cations can enter the perovskite layer to compensate for defects in the perovskite layer, further improving the long-term stability of the perovskite battery. When a passivation layer is provided between the perovskite layer and the substrate, the probability of anions in the perovskite layer migrating to the substrate is reduced, further reducing the probability of perovskite decomposition, and improving the long-term stability of the perovskite layer.

[0006] According to some embodiments of the present application, the number of atoms other than hydrogen atoms in the anions of one of the passivation materials is 3 to 24, and the number of atoms other than hydrogen atoms in the cations of one of the passivation materials is 1 to 5. This makes the volume of the anions in the passivation layer larger than the volume of the cations in the passivation layer, forming a potential barrier between the anions in the passivation layer and the cations in the passivation layer, which inhibits the movement of the anions in the perovskite layer and reduces the probability that the anions in the perovskite layer will move to the electrode layer and react with the electrode layer.

[0007] According to some embodiments of the present application, the anion comprises A1-R-A2, where A1 comprises one or more of a hydrogen atom, a halogen atom, a benzene ring, a heterocycle, or a fused ring; R comprises one or more of an alkyl chain having 0 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms; and A2 comprises one or more of a carboxylic acid group, a sulfonic acid group, a phosphonic acid group, or a boric acid group.

[0008] According to some embodiments of the present application, A1 comprises one or more of said benzene rings or said heterocycles.

[0009] According to some embodiments of the present application, R comprises one or more of an alkyl chain having 2 to 5 carbon atoms or an alkenyl group having 2 to 5 carbon atoms.

[0010] According to some embodiments of the present application, A2 comprises one or more of a carboxylic acid group, a sulfonic acid group, or a phosphonic acid group.

[0011] According to some embodiments of the present application, the anions include one or more of N, O, P, and S elements, which can bond with defects on the surface of the perovskite layer to passivate the defects, reduce non-radiative recombination, and improve the stability of the defects.

[0012] According to some embodiments of the present application, the anion includes one or more of a benzene ring or an alkyl group, whereby the benzene ring and the alkyl group have high hydrophobicity, which can reduce the risk of moisture penetrating into the perovskite layer and improve the service life of the perovskite battery.

[0013] According to some embodiments of the present application, the cation is an organic cation, Li + , Na + , K. + , Rb + or Cs +This allows the cations to enter the perovskite layer and compensate for defects in the perovskite layer.

[0014] According to some embodiments of the present application, the organic cation comprises one or more of a methylamine cation, an ethylamine cation, a propylamine cation, a butylamine cation, a pentylamine cation, a hexylamine cation, a formamidinium cation, an imidazolyl cation, or a guanidine cation.

[0015] According to some embodiments of the present application, the cations include methylamine cations, which can replenish the loss of methylamine in the perovskite layer during heating, reduce defects in the perovskite layer, and improve the long-term stability of the perovskite battery.

[0016] According to some embodiments of the present application, the passivation material includes one or more of phenylpropionic acid methylamine salt, 1-piperidinylpropionic acid cesium salt, or 2-phenylethane-1-sulfonic acid formamidinium salt.

[0017] According to some embodiments of the present application, the thickness of the passivation layer is 0.1 nm to 10 nm, which inhibits the movement of anions in the perovskite layer and reduces the influence of the passivation layer on electron transport.

[0018] According to some embodiments of the present application, the material of the electrode layer includes one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, aluminum doped zinc oxide, boron doped zinc oxide, or indium zinc oxide.

[0019] According to some embodiments of the present application, the material of the electrode layer includes copper, whereby the passivation layer inhibits the migration of anions in the perovskite layer to the electrode layer, thereby reducing the reaction between the anions in the passivation layer and the copper electrode, and reducing the risk of decomposition of the copper electrode.

[0020] According to some embodiments of the present application, the material of the perovskite layer comprises one or more of PBX3 or P2CDX6, where P is an organic cation, Li + , Na + , K. + , Rb + or Cs + B is Pb 2+ , Sn 2+ , Be 2+ , Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ , Zn 2+ , Ge 2+ , Fe 2+ , Co 2+ , Cu 2+ and Ni 2+ C includes one or more of Cs + , Ag + , K. + and Ru + D is Bi 3+ , Ni 3+ , Fe 3+ , Cu 3+ , Sb 3+ or In 3+ and X is Cl. - , Br - or I - It includes one or more of the following.

[0021] According to some embodiments of the present application, B is Pb 2+ or Sn 2+ It includes one or more of the following.

[0022] According to some embodiments of the present application, C is Ag + Includes.

[0023] According to some embodiments of the present application, the perovskite layer comprises I - Includes.

[0024] According to some embodiments of the present application, the band gap of the perovskite layer is 1.20 eV to 2.30 eV, which allows it to absorb most of the light in the solar spectrum and effectively convert it from ultraviolet to infrared rays into electrical energy.

[0025] According to some embodiments of the present application, the thickness of the perovskite layer is 200 nm to 1000 nm, which improves the efficiency of the perovskite battery.

[0026] According to some embodiments of the present application, the perovskite battery further includes an electron transport layer disposed between the passivation layer and the electrode layer, which, when the perovskite battery is a trans-type perovskite battery, can inhibit the migration of anions in the perovskite layer, reduce the probability that the anions in the perovskite layer migrate to and react with the electrode layer, and improve the long-term stability of the perovskite battery.

[0027] According to some embodiments of the present application, the material of the electron transport layer includes one or more of fullerene and its derivatives, tin dioxide and its derivatives, or zinc oxide and its derivatives, which improves the electron transport ability and the efficiency of the perovskite battery.

[0028] According to some embodiments of the present application, the perovskite battery further includes a hole transport layer disposed between the passivation layer and the electrode layer, which, when the perovskite battery is a cis-type perovskite battery, can similarly inhibit the movement of anions in the perovskite layer, reduce the probability that the anions in the perovskite layer will move to and react with the electrode layer, and improve the long-term stability of the perovskite battery.

[0029] According to some embodiments of the present application, the material of the hole transport layer includes one or more of nickel oxide and its derivatives, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and its derivatives, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid and its derivatives, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene and its derivatives, or poly-3-hexylthiophene and its derivatives, thereby improving the hole transport ability and the efficiency of the perovskite battery.

[0030] A second aspect of the present application provides a power consuming device comprising a perovskite battery according to the first aspect of the present application, thereby providing the power consuming device with high long-term stability and a long service life.

[0031] Additional aspects and advantages of the present application will be set forth in part in the description that follows, and in part will be obvious from the description, or may be learned by practice of the present application. [Brief explanation of the drawings]

[0032] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of the preferred embodiments. The drawings are used only to illustrate the preferred embodiments and are not to be considered as limiting the present application. And throughout the drawings, like elements are represented by like reference numerals. In the drawings: [Figure 1] FIG. 1 is a structural schematic diagram of a perovskite battery according to an embodiment of the present application. [Figure 2] FIG. 1 is a structural schematic diagram of a perovskite battery according to another embodiment of the present application. [Figure 3] FIG. 1 is a structural schematic diagram of a perovskite battery according to another embodiment of the present application. [Figure 4] FIG. 1 is a structural schematic diagram of a perovskite battery according to another embodiment of the present application. [Figure 5] FIG. 1 is a structural schematic diagram of a perovskite battery according to another embodiment of the present application. [Figure 6]FIG. 1 is a structural schematic diagram of a perovskite battery according to another embodiment of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0033] The following detailed description will be given of examples of the technical solution of the present application. The following examples are only used to more clearly explain the technical solution of the present application, and are merely examples, which do not limit the protection scope of the present application.

[0034] The term "embodiment" as used herein means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the present application. Appearances of this phrase in various locations throughout the specification do not necessarily all refer to the same embodiment, nor are they mutually exclusive, independent, or alternative embodiments. Those skilled in the art will understand, both explicitly and implicitly, that the embodiments described herein can be combined with other embodiments.

[0035] For the sake of brevity, this specification specifically discloses only a few ranges of numerical values. However, any lower limit may be combined with any upper limit to form an unspecified range, any lower limit may be combined with another lower limit to form an unspecified range, and similarly, any upper limit may be combined with another upper limit to form an unspecified range. Furthermore, each point or single numerical value disclosed individually may be combined with any other point or single numerical value as a lower limit or upper limit, or may be combined with another lower limit or upper limit to form an unspecified range.

[0036] In the description of the embodiments of this application, the term "and / or" merely describes the relationship between related objects and indicates that three relationships may exist. For example, A and / or B may represent three cases: A alone, a combination of A and B, and B alone. In addition, the character " / " in this specification generally indicates that the related objects before and after it are in an "or" relationship.

[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art of this application, and the terms used herein are only for describing specific embodiments and are not intended to limit this application. The terms "comprises" and "having" and any variations thereof in the specification and claims of this application and the description of the drawings above are intended to cover a non-exclusive "comprise."

[0038] As the global ecological environment and energy shortages become more serious, solar power generation has attracted widespread attention. Perovskite cells, as a new type of third-generation solar cell, are a rising star in the solar cell field due to their advantages such as low cost, simple manufacturing process, and high efficiency. However, defects are easily formed during the manufacturing process of perovskite cells. However, because perovskite cells have a high tolerance for defects, the impact of defects on the efficiency of perovskite cells is minimal. However, defects in the perovskite layer are sites of fast ion migration, and anions in the perovskite layer can migrate to the electrode layer and react with it, causing the electrode layer to decompose and affecting the long-term stability of perovskite batteries.

[0039] In the perovskite battery according to the present application, the volume of anions in the passivation layer is made larger than the volume of cations in the passivation layer, thereby forming a potential barrier in the passivation layer and inhibiting the migration of anions in the perovskite layer. In order to reduce the risk of anions in the passivation layer entering the perovskite layer, the volume of anions in the passivation layer is made larger than the volume of the largest defect in the perovskite layer, thereby reducing the risk of anions in the passivation layer entering the perovskite layer, and forming a region with a high negative charge concentration on the surface of the passivation layer close to the perovskite layer, further inhibiting the migration of anions in the perovskite layer, reducing the probability of anions in the perovskite layer reacting with the electrode layer, thereby improving the long-term stability of the perovskite battery.

[0040] The perovskite battery disclosed in the present application belongs to solar cells, and the perovskite battery disclosed in the examples of the present application may be used as a power source for power-consuming devices, or may be assembled into a solar power generation system to store electrical energy in an energy storage system consisting of an energy storage battery. The power-consuming devices may include roadway lights, traffic lights, pest control lights, fans, electric toys, power tools, battery-powered vehicles, electric vehicles, steamships, spacecraft, etc., where the electric toys may include stationary or mobile electric toys such as game consoles, electric car toys, electric steamship toys, and electric airplane toys, the spacecraft may include airplanes, rockets, space shuttles, and spaceships, and the solar power generation system may include large-scale ground-based solar power generation systems, distributed solar power generation systems, and building-integrated solar power generation systems, etc.

[0041] A first aspect of the present application provides a perovskite battery 1. Referring to Figures 1 and 2, the perovskite battery 1 includes a substrate 16, a perovskite layer 11 provided on one side of the substrate 16, a passivation layer 12 provided on at least one side of the perovskite layer 11, the passivation layer 12 comprising a passivation material, the passivation material comprising anions and cations, a volume of the anions being V1 and a volume of the cations being V2, V1 > V3 > V2, where V3 is the volume of the largest defect in the perovskite layer 11, and an electrode layer 13 provided on the side of the passivation layer 12 facing away from the perovskite layer 11. Specifically, the passivation layer 12 may be provided only between the perovskite layer 11 and the electrode layer 13 (see Figure 1), or the passivation layer 12 may be provided between the perovskite layer 11 and the electrode layer 13, and the passivation layer 12 may be provided between the substrate 16 and the perovskite layer 12 (see Figure 2).

[0042] In the perovskite battery 1 according to the present application, when the passivation layer 12 is provided between the perovskite layer 11 and the electrode layer 13, V1>V2, so that cations with small volume in the passivation layer 12 are easy to move, and anions with large volume in the passivation layer 12 are difficult to move, and a potential barrier is formed between the anions in the passivation layer 12 and the cations in the passivation layer 12, reducing the risk of anions in the perovskite layer 11 passing through the passivation layer 12; and V1>V3, so that anions in the passivation layer 12 can enter the perovskite layer 11 through defect sites. Furthermore, the passivation layer 12 can reduce the probability of anions in the passivation layer 12 entering the perovskite layer 11, forming a region with a high negative charge concentration on the surface of the perovskite layer 11 and further reducing the migration of anions on the surface of the perovskite layer 11, thereby reducing the probability of anions on the surface of the perovskite layer 11 and within the perovskite layer 11 migrating to and reacting with the electrode layer 13 and improving the long-term stability of the perovskite battery 1. V3 > V2, and cations can enter the perovskite layer to compensate for defects in the perovskite layer and improve the long-term stability of the perovskite battery 1. When the passivation layer 12 is provided between the perovskite layer 11 and the substrate 16, the risk of anions in the perovskite layer 11 migrating to the substrate 16 can be reduced, further reducing the probability of perovskite decomposition and improving the long-term stability of the perovskite layer 11.

[0043] It should be noted that the passivation layer 12 of the present application may be directly disposed on the surface of the perovskite layer 11, or other functional layers may be further disposed between the passivation layer 12 and the perovskite layer 11, and the passivation layer 12 may be disposed between the electrode layer 13 and the perovskite layer 11.

[0044] In this application, the term "defect" includes defects formed during perovskite crystallization. In this application, the term "largest defect" in the perovskite layer 11 refers to the defect with the largest volume in the perovskite layer 11.

[0045] According to some embodiments of the present application, the volume of the anions in the passivation layer 12 can be made larger than the volume of the cations in the passivation layer 12 by making the numbers of atoms in the anions and cations in the passivation material satisfy a certain range. For example, the number of atoms other than hydrogen atoms in one anion in the passivation material may be 3 to 24, such as 3, 5, 8, 11, 14, 17, 20, or 24, or may be within a range of any of the above values. The number of atoms other than hydrogen atoms in one cation in the passivation material may be 1 to 5, such as 1, 2, 3, 4, or 5. As a result, the volume of the anions in the passivation layer 12 is larger than the volume of the cations in the passivation layer 12, and a potential barrier is formed in the passivation layer 12, which can inhibit the movement of the anions in the perovskite layer 11, reducing the risk of reaction between the anions in the perovskite layer 11 and the electrode layer 13, and improving the long-term stability of the perovskite battery 1. According to some specific embodiments of the present application, the number of atoms other than hydrogen atoms in one of the anions in the passivation material may be 8 to 15, and the number of atoms other than hydrogen atoms in one of the cations in the passivation material may be 2 to 4.

[0046] According to some embodiments of the present application, the anions may include A1-R-A2, where A1 includes one or more of a hydrogen atom, a halogen atom, a benzene ring, a heterocycle, or a fused ring; R includes one or more of an alkyl chain having 0 to 10 carbon atoms or an alkenyl group having 2 to 10 carbon atoms; and A2 includes one or more of a carboxylic acid group, a sulfonic acid group, a phosphonic acid group, or a boric acid group. This allows the anions in the passivation layer 12 to have a large volume and to be less mobile in the passivation layer 12, while the small molecule cations in the passivation layer 12 are more mobile. A potential barrier is formed between the anions in the passivation layer 12 and the cations in the passivation layer 12, inhibiting the migration of the anions in the perovskite layer 11. According to some specific embodiments of the present application, A1 may include one or more of the benzene ring or the heterocycle. According to some specific embodiments of the present application, R may include one or more of an alkyl chain having 2 to 5 carbon atoms or an alkenyl group having 2 to 5 carbon atoms. According to some specific embodiments of the present application, A2 may include one or more of a carboxylic acid group, a sulfonic acid group, or a phosphonic acid group.

[0047] According to some specific embodiments of the present application, the anions may include one or more of N, O, P, and S. Thus, the N, O, P, and S elements can bond with defects on the surface of the perovskite layer 11 to passivate the defects, reduce non-radiative recombination, and improve the stability of the defects. Furthermore, the N, O, P, and S elements have a high interaction with the material of the perovskite layer 11, preventing volatile components in the perovskite layer 11 from evaporating during heating, further improving the stability of the perovskite battery 1.

[0048] According to some embodiments of the present application, since perovskite materials are sensitive to moisture and are prone to moisture intrusion when the packaging effect of the perovskite battery 1 is poor, which will degrade the performance of the perovskite battery 1, the anions in the passivation layer 12 may include one or more of a benzene ring or an alkyl group, so that the passivation layer 12 can delay the intrusion of moisture into the perovskite layer 11 and improve the service life of the perovskite battery 1.

[0049] According to some embodiments of the present application, the cations in the passivation layer 12 are organic cations, Li + , Na + , K. + , Rb + or Cs + As a result, the cations in the passivation layer 12 have a small volume and are easy to move in the passivation layer 12, while the anions in the passivation layer 12 have a large volume and are difficult to move, and a potential barrier is formed between the anions in the passivation layer 12 and the cations in the passivation layer 12, inhibiting the movement of the anions in the perovskite layer 11. At the same time, the cations can enter the perovskite layer 11 and fill in the defects in the perovskite layer 11.

[0050] According to some specific embodiments of the present application, the organic cation may include one or more of methylamine cation, ethylamine cation, propylamine cation, butylamine cation, pentylamine cation, hexylamine cation, formamidinium cation, imidazolyl cation, or guanidine cation.

[0051] According to some specific embodiments of the present application, a method such as heating is used during the manufacture of the perovskite battery 1, and since unstable components in the perovskite layer 11 are washed away during heating, the cations in the passivation layer 12 may include methylamine cations, so that the methylamine cations can enter the perovskite layer 11 to replenish the methylamine lost in the perovskite layer 11 during heating, reduce defects in the perovskite layer 11, and improve the long-term stability of the perovskite battery 1.

[0052] According to some embodiments of the present application, the passivation material may specifically include one or more of phenylpropionic acid methylamine salt, 1-piperidinylpropionic acid cesium salt, or 2-phenylethane-1-sulfonic acid formamidinium salt.

[0053] According to some embodiments of the present application, the thickness of the passivation layer 12 may be 0.1 nm to 10 nm, for example, 0.1 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, or 10 nm, or may be any range of the above values, thereby inhibiting the movement of anions in the perovskite layer 11 and reducing the effect of the passivation layer 12 on electron transport, thereby improving the efficiency of the perovskite battery 1.

[0054] The thickness testing method in this application involves testing a cross section of the cell with a scanning electron microscope to obtain the thickness of the passivation layer 12 .

[0055] According to some embodiments of the present application, the material of the electrode layer 13 may include one or more of silver, copper, carbon, gold, aluminum, indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), or indium zinc oxide (IZO). According to some specific embodiments of the present application, the material of the electrode layer 13 may include copper. When the material of the electrode layer 13 includes copper, the passivation layer 12 inhibits the migration of anions in the perovskite layer 11, thereby reducing the probability that the anions in the perovskite layer 11 migrate to the electrode layer 13 and react with copper, thereby improving the long-term stability of the perovskite battery 1.

[0056] According to some embodiments of the present application, the material of the perovskite layer 11 may include one or more of PBX3 or P2CDX6, where P is an organic cation, Li + , Na + , K. + , Rb + or Cs + B is Pb 2+ , Sn 2+ , Be 2+ , Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ , Zn 2+ , Ge 2+ , Fe 2+ , Co 2+ , Cu 2+ and Ni 2+ C includes one or more of Cs + , Ag + , K. + and Ru + D is Bi 3+ , Ni 3+ , Fe 3+ , Cu 3+ , Sb 3+ or In 3+ and X is one or more of: - or I -includes one or more of them. For example, the material of the perovskite layer 11 may be CH3NH3PbI3, CH3NH3SnI3, CH3NH3PbI2Br, CH3NH3Pb(I 1-x Br x )3 (where 0 < x < 1). According to some specific embodiments of the present application, B may include one or more of Pb 2+ or Sn 2+ . According to some specific embodiments of the present application, C may include Ag + .

[0057] According to some embodiments of the present application, the perovskite layer includes I - . When the material of the electrode layer 13 contains copper and the perovskite layer 11 contains I - , the passivation layer 12 can inhibit the movement of I - in the perovskite layer 11, thereby reducing the probability that I - in the perovskite layer 11 moves to the electrode layer 13 and reacts with copper, and improving the long-term stability of the perovskite battery 1.

[0058] According to some embodiments of the present application, the band gap of the perovskite layer 11 may be 1.20 eV to 2.30 eV. For example, it may be 1.4 eV, 1.6 eV, 1.8 eV, 2.0 eV, 2.2 eV, 2.3 eV, etc., or it may be a range consisting of any of the above numerical values. Thereby, the band gap of the perovskite layer 11 satisfies the above range, can absorb most of the light within the solar spectrum range, and can effectively convert light from ultraviolet to infrared into electrical energy.

[0059] According to some embodiments of the present application, the thickness of the perovskite layer 11 may be 200 nm to 1000 nm, such as 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or any range of the above values, thereby increasing the content of the active material in the perovskite layer 11 and improving the efficiency of the perovskite battery 1.

[0060] According to some embodiments of the present application, the substrate 16 may include one or more of fluorine-doped tin dioxide (FTO), ITO, AZO, BZO, or IZO.

[0061] According to some embodiments of the present application, the perovskite battery 1 may be a trans-type perovskite battery 1. Specifically, referring to Fig. 3, the perovskite battery 1 further includes an electron transport layer 15, which is disposed between the passivation layer 12 and the electrode layer 13. For example, the perovskite battery 1 may include a substrate 16, a hole transport layer 14 disposed on one side of the substrate 16, a perovskite layer 11 disposed on a side of the hole transport layer 14 facing away from the substrate 16, a passivation layer 12 disposed on a side of the perovskite layer 11 facing away from the hole transport layer 14, an electron transport layer 15 disposed on a side of the passivation layer 12 facing away from the perovskite layer 11, and an electrode layer 13 disposed on a side of the electron transport layer 15 facing away from the passivation layer 12. This inhibits the movement of anions in the perovskite layer 11 when the perovskite battery 1 is a trans-type perovskite battery 1, reducing the probability that anions in the perovskite layer 11 will move to and react with the electrode layer 13, thereby improving the long-term stability of the perovskite battery 1.

[0062] According to some embodiments of the present application, referring to FIG. 4 , the perovskite cell 1 may further include a substrate 16, a hole transport layer 14 provided on one side of the substrate 16, a perovskite layer 11 provided on a side of the hole transport layer 14 facing away from the substrate 16, an electron transport layer 15 provided on a side of the perovskite layer 11 facing away from the hole transport layer 14, a passivation layer 12 provided on a side of the electron transport layer 15 facing away from the perovskite layer 11, and an electrode layer 13 provided on a side of the passivation layer 12 facing away from the electron transport layer 15.

[0063] According to some embodiments of the present application, the material of the electron transport layer 15 may include one or more of fullerene and its derivatives, tin dioxide and its derivatives, or zinc oxide and its derivatives. According to some specific embodiments of the present application, the fullerene derivative is [6,6]-phenyl-C 61 -methyl butyrate and its derivatives or [6,6]-phenyl-C 71 The perovskite cell 1 may include one or more of methyl butyrate and its derivatives, which improves the electron transport capability and increases the efficiency of the cell.

[0064] According to some embodiments of the present application, the perovskite battery 1 may be a cis-type perovskite battery 1. Specifically, referring to FIG. 5 , the perovskite battery 1 may further include a hole transport layer 14, which is provided between the passivation layer 12 and the electrode layer 13. For example, the perovskite battery 11 includes a substrate 16, an electron transport layer 15 provided on one side of the substrate 16, a perovskite layer 11 provided on a side of the electron transport layer 15 facing away from the substrate 16, a passivation layer 12 provided on a side of the perovskite layer 11 facing away from the electron transport layer 15, a hole transport layer 14 provided on a side of the passivation layer 12 facing away from the perovskite layer 11, and an electrode layer 13 provided on a side of the hole transport layer 14 facing away from the passivation layer 12. This inhibits the movement of anions in the perovskite layer 11 when the perovskite battery 1 is a cis-type perovskite battery 1, reducing the probability that anions in the perovskite layer 11 will move to and react with the electrode layer 13, thereby improving the long-term stability of the perovskite battery 1.

[0065] According to some embodiments of the present application, referring to FIG. 6 , the perovskite cell 1 may further include a substrate 16, an electron transport layer 15 provided on one side of the substrate 16, a perovskite layer 11 provided on a side of the electron transport layer 15 facing away from the substrate 16, a hole transport layer 14 provided on a side of the perovskite layer 11 facing away from the electron transport layer 15, a passivation layer 12 provided on a side of the hole transport layer 14 facing away from the perovskite layer 11, and an electrode layer 13 provided on a side of the passivation layer 12 facing away from the hole transport layer 14.

[0066] According to some embodiments of the present application, the material of the hole transport layer 14 may include one or more of nickel oxide and its derivatives, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and its derivatives, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid and its derivatives, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene and its derivatives, or poly-3-hexylthiophene and its derivatives, thereby improving the hole transport capability and the efficiency of the perovskite cell 1.

[0067] According to some embodiments of the present application, the formation method of the passivation layer 12 may include one or more of spin coating, spray coating, knife coating, and slit coating, and after forming the passivation layer 12, the solvent may be removed by annealing, vacuum, or anti-solvent cleaning.

[0068] A second aspect of the present application provides a power consuming device including the perovskite battery 1 according to the first aspect of the present application. This allows the power consuming device to have high long-term stability and a long service life. The power consuming device may include lighting elements, display elements, mobile devices, etc., and more specifically, road lights, traffic lights, pest control lights, electric fans, electric toys, power tools, battery-powered vehicles, electric vehicles, steamships, spacecraft, etc., where the electric toys may include stationary or mobile electric toys, such as game consoles, electric car toys, electric steamship toys, and electric airplane toys, and the spacecraft may include airplanes, rockets, space shuttles, and spaceships, and the solar power generating system may include large-scale ground-based solar power generating systems, distributed solar power generation systems, and building-integrated solar power generating systems, etc.

[0069] In order to clarify the technical problems, technical solutions, and beneficial effects that the embodiments of the present application aim to solve, the embodiments will be described in more detail below in conjunction with the drawings. It is apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. The following description of at least one exemplary embodiment is for illustrative purposes only and in no way limits the present application and its applications. All other embodiments that can be obtained by those skilled in the art based on the embodiments in the present application without any creative effort fall within the scope of protection of the present application.

[0070] Example 1 1. Perovskite battery manufacturing Provide a 2.0*2.0cm FTO conductive glass substrate. Remove 0.35cm of FTO on each end by laser etching to expose the glass substrate. The FTO conductive glass after etching was ultrasonically cleaned several times with water, acetone, and isopropanol in that order. The solvent was blown off from the FTO conductive glass with a nitrogen gun and then placed in an ultraviolet ozone machine for further cleaning.

[0071] Fabrication of hole transport layer: After UV-ozone treatment, 10 mg / mL nickel oxide solution was spin-coated on the FTO substrate at a speed of 4000 rpm, and then annealed on a hot stage at 100°C for 30 minutes to obtain a hole transport layer, with a thickness of 20 nm.

[0072] Fabrication of the perovskite layer: Lead iodide, formamidine iodide, cesium iodide, methylamine bromide, and lead bromide were weighed and dissolved in a mixed solution of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), stirred for 3 hours, and filtered through a 0.22 μm organic filter membrane to obtain a perovskite precursor solution. The perovskite precursor solution was spin-coated on the hole transport layer at 3000 rpm, annealed at 100 °C for 30 minutes, and cooled to room temperature to obtain a perovskite layer. The active material of the perovskite layer was Cs 0.05 FA 0.78 MA 0.17 PbI2.49 Br 0.51 and the thickness of the perovskite layer is 550 nm.

[0073] Fabrication of passivation layer: A 1 mg / mL isopropanol precursor solution of passivation material 1 was prepared, filtered through a 0.22 μm organic filter membrane, spin-coated at 3000 rpm onto the perovskite layer, and annealed to obtain a passivation layer with a thickness of 1 nm.

[0074] Fabrication of the electron transport layer: (6,6)-phenyl-C with a mass concentration of 20 mg / mL on the passivation layer 61 A solution of methyl butyrate (PCBM) in chlorobenzene was spin-coated at 1500 rpm, annealed at 100° C. for 10 minutes, and cooled to room temperature, resulting in an electron transport layer having a thickness of 50 nm.

[0075] Fabrication of hole barrier layer: A solution of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) in isopropanol with a mass concentration of 0.5 mg / mL was spin-coated on the electron transport layer at 5000 rpm and annealed to obtain a hole barrier layer with a thickness of 3 nm.

[0076] Fabrication of electrode layer: After trimming and selecting an appropriate mask, the obtained sheet was placed in an evaporation machine to evaporate a metal electrode Cu, the thickness of the electrode layer was 80 nm, and a perovskite battery was obtained.

[0077] The manufacturing methods of Examples 1 to 28 and Comparative Examples 1 to 3 were the same as those of Example 1, and the differences from Example 1 are as shown in Table 1.

[0078] [Table 1-A] [Table 1-B] [Table 1-C] [Table 1-D] [Table 1-E] [Table 1-F]

[0079] Performance Test: 1. Photoelectric conversion efficiency test 100mW / cm using AM 1.5G solar simulator 2 The photoelectric conversion efficiency of the perovskite cell was obtained by measuring the current-voltage characteristic curve of the fabricated perovskite cell under light irradiation using a 4-channel digital source meter (Keithley 2440). The photoelectric conversion efficiency of the perovskite cell was tested on the 3rd and 30th days, and the test results are shown in Table 2.

[0080] [Table 2-A] [Table 2-B]

[0081] In conclusion, as can be seen from Table 2, the decay in photoelectric conversion efficiency after 30 days of the perovskite cells of the present application (Examples 1 to 28) was lower than that of Comparative Examples 1 to 3, indicating that the perovskite cells of the present application have excellent long-term stability.

[0082] Finally, it should be noted that the above examples are merely for the purpose of illustrating the technical solution of the present application and are not intended to limit it. Although the present application has been described in detail with reference to the above examples, those skilled in the art will understand that the technical solution described in the above examples may still be modified or some or all of the technical features may be replaced with equivalents. Such modifications or replacements do not deviate from the essence of the relevant technical solution from the scope of the technical solution of the examples of the present application, and all of them should be encompassed by the claims and the description of the present application. In particular, as long as there is no structural contradiction, the technical features mentioned in the examples may be combined in any manner. The present application is not limited to the specific examples disclosed herein, but includes all technical solutions within the scope of the claims. [Explanation of symbols]

[0083] 1. Perovskite battery 11 Perovskite layer 12 Passivation layer 13 Electrode layer 14 Hole transport layer 15 Electron transport layer 16 boards

Claims

1. A perovskite battery, A substrate; a perovskite layer provided on one side of the substrate; a passivation layer provided on at least one side of the perovskite layer, the passivation layer comprising a passivation material, the passivation material comprising anions and cations, the volume of the anions being V １ and the volume of the cation is V ２ and V １ >V ３ >V ２ where V ３ is the maximum defect volume in the perovskite layer; an electrode layer disposed on a side of the passivation layer remote from the perovskite layer.

2. 2. The perovskite battery according to claim 1, wherein the number of atoms other than hydrogen atoms in one of the anions of the passivation material is 3 to 24, and the number of atoms other than hydrogen atoms in one of the cations of the passivation material is 1 to 5.

3. 3. The perovskite battery according to claim 1, wherein the number of atoms other than hydrogen atoms in one of the anions of the passivation material is 8 to 15, and the number of atoms other than hydrogen atoms in one of the cations of the passivation material is 2 to 4.

4. The anion is A １ -R-A ２ where A １ R includes one or more of a hydrogen atom, a halogen atom, a benzene ring, a heterocycle, or a fused ring; R includes one or more of an alkyl chain having 0 to 10 carbon atoms, or an alkenyl group having 2 to 10 carbon atoms; A ２ The perovskite battery of any one of claims 1 to 3, wherein comprises one or more of a carboxylic acid group, a sulfonic acid group, a phosphonic acid group, or a boric acid group.

5. A １ contains one or more of the benzene ring or the heterocycle; R comprises one or more of an alkyl chain having 2 to 5 carbon atoms or an alkenyl group having 2 to 5 carbon atoms; A ２ and b) containing one or more of a carboxylic acid group, a sulfonic acid group, or a phosphonic acid group.

6. The perovskite battery according to any one of claims 1 to 5, wherein the anions include one or more of an N element, an O element, a P element, or an S element.

7. The perovskite battery according to any one of claims 1 to 6, wherein the anion includes one or more of a benzene ring or an alkyl group.

8. The cation is an organic cation, Li ＋ , Na ＋ , K. ＋ , Rb ＋ or Cs ＋ The perovskite battery of any one of claims 1 to 7, comprising one or more of:

9. 9. The perovskite battery of claim 8, wherein the organic cations include one or more of methylamine cations, ethylamine cations, propylamine cations, butylamine cations, pentylamine cations, hexylamine cations, formamidinium cations, imidazolyl cations, or guanidine cations.

10. The perovskite battery according to any one of claims 1 to 9, wherein the cations comprise methylamine cations.

11. 11. The perovskite cell of claim 1, wherein the passivation material comprises one or more of phenylpropionic acid methylamine salt, 1-piperidinylpropionic acid cesium salt, or 2-phenylethane-1-sulfonic acid formamidinium salt.

12. The perovskite cell according to any one of claims 1 to 11, wherein the passivation layer has a thickness of 0.1 nm to 10 nm.

13. The perovskite battery comprises: the material of the electrode layer comprises one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, aluminum doped zinc oxide, boron doped zinc oxide, or indium zinc oxide; the material of the electrode layer includes copper; The material of the perovskite layer is PBX ３ and P ２ CDX ６ wherein P is an organic cation, Li ＋ , Na ＋ , K. ＋ , Rb ＋ or Cs ＋ and B is Pb. ２＋ , Sn ２＋ , Be ２＋ , Mg ２＋ , Ca ２＋ , Sr ２＋ , Ba ２＋ , Zn ２＋ , Ge ２＋ , Fe ２＋ , Co ２＋ , Cu ２＋ and Ni ２＋ and optionally, B is Pb ２＋ or Sn ２＋ and C is Cs ＋ , Ag ＋ , K. ＋ and Ru ＋ and optionally, C is Ag ＋ and D is Bi ３＋ , Ni ３＋ , Fe ３＋ , Cu ３＋ , Sb ３＋ Or In ３＋ and X is Cl. － ,Br － or I － and The perovskite layer is I － and The band gap of the perovskite layer is 1.20 eV to 2.30 eV; The perovskite battery according to any one of claims 1 to 12, wherein the thickness of the perovskite layer is 200 nm to 1000 nm.

14. The perovskite battery according to any one of claims 1 to 13, further comprising an electron transport layer provided between the passivation layer and the electrode layer.

15. 15. The perovskite cell of claim 14, wherein the material of the electron transport layer comprises one or more of fullerenes and derivatives thereof, tin dioxide and derivatives thereof, or zinc oxide and derivatives thereof.

16. The perovskite battery according to any one of claims 1 to 15, further comprising a hole transport layer provided between the passivation layer and the electrode layer.

17. 17. The perovskite battery of claim 16, wherein the material of the hole transport layer comprises one or more of nickel oxide and derivatives thereof, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and derivatives thereof, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid and derivatives thereof, 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene and derivatives thereof, or poly-3-hexylthiophene and derivatives thereof.

18. An electric power consuming device comprising the perovskite battery of any one of claims 1 to 17.

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