Communication Module

Abstract

A communication module according to one embodiment of the present invention includes a substrate, a first chipset embedded in the substrate, a shielding layer disposed between the first chipset and a second chipset, a grounding layer connected to the shielding layer and disposed at a bottom of the substrate, and a first via connecting the shielding layer and the grounding layer.

Description

[Technical Field]

[0001] The present invention relates to a communication module, and more particularly to a communication module having a shielding structure between two chips. [Background technology]

[0002] Bluetooth® and Wi-Fi are essential features in today's modern connected cars, and in-vehicle Wi-Fi hotspots powered by Cellular (LTE) have become a must-have option for car models. Wi-Fi can also be used to integrate smart devices with the vehicle's infotainment system.

[0003] While using Wi-Fi in vehicles via hotspots and smartphone connections is convenient, it can also cause wireless interference problems. Wi-Fi signals inside a vehicle can be affected by interference from Bluetooth devices inside the vehicle, Wi-Fi hotspots, and other nearby ISM band noise. This interference can reduce Wi-Fi transmission speeds or prevent Wi-Fi and Bluetooth devices from connecting. Summary of the Invention [Problem to be solved by the invention]

[0004] The technical problem that the present invention aims to solve is to provide a communication module having a shielding structure between two chips. [Means for solving the problem]

[0005] In order to solve the above technical problem, a communication module according to one embodiment of the present invention includes a substrate; a first chipset embedded in the substrate; a second chipset disposed on top of the substrate; a shielding layer disposed between the first chipset and the second chipset; a grounding layer connected to the shielding layer and disposed on the bottom of the substrate; and a first via connecting the shielding layer and the grounding layer.

[0006] The first via may be disposed outside the second chipset.

[0007] Furthermore, there may be a plurality of the first vias.

[0008] The shielding layer may also include a shielding region that penetrates the shielding layer and is disposed outside the first via.

[0009] The shielding area may also include a groove surrounding the first chipset.

[0010] The groove may also interrupt at least a portion of the shield layer.

[0011] The width of the groove that interrupts the shield layer may be 0.1 mm or more.

[0012] The shielding area may be disposed closer to the outside of the substrate than the first chipset.

[0013] The semiconductor device may also include a second via arranged outside the shielding region and connecting the shielding layer and the ground layer.

[0014] The shield layer may also include a first shield layer region disposed inside the open region and a second shield layer region disposed outside the open region.

[0015] The first via may connect the first shield layer region and the ground layer, and the second via may connect the second shield layer region and the ground layer.

[0016] The area of ​​the first shield layer region may be equal to or greater than the area of ​​the first chip set.

[0017] The separation distance between the first shield layer region and the second shield layer region may be 0.1 mm or more.

[0018] In order to solve the above technical problem, a vehicle according to an embodiment of the present invention includes one of the above communication modules. [Effects of the Invention]

[0019] According to an embodiment of the present invention, it is possible to ensure the simultaneous operation of two identical chipsets, and also to improve the shielding performance by forming a shielding layer and a shielding wall that shield the chipset embedded in the substrate. [Brief explanation of the drawings]

[0020] [Figure 1] FIG. 2 illustrates a communication module according to one embodiment of the present invention. [Figure 2] 10A and 10B are diagrams illustrating the shielding performance of a communication module according to an embodiment of the present invention. [Figure 3] FIG. 2 illustrates a communication module according to an embodiment of the present invention. [Figure 4] FIG. 2 illustrates a communication module according to an embodiment of the present invention. [Figure 5] 10A and 10B are diagrams illustrating the shielding performance of a communication module according to an embodiment of the present invention. [Figure 6] FIG. 2 illustrates a communication module according to an embodiment of the present invention. [Figure 7] FIG. 2 is a diagram illustrating a signal transmission path of a communication module according to an embodiment of the present invention. [Figure 8] 1 is a diagram for explaining the layout of a communication module according to an embodiment of the present invention; [Figure 9] 1 is a diagram for explaining the layout of a communication module according to an embodiment of the present invention; [Figure 10] 1 is a diagram for explaining the layout of a communication module according to an embodiment of the present invention; [Figure 11] 1 is a diagram for explaining the layout of a communication module according to an embodiment of the present invention; [Figure 12]1 is a diagram for explaining the layout of a communication module according to an embodiment of the present invention; DETAILED DESCRIPTION OF THE INVENTION

[0021] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0022] However, the technical concept of the present invention is not limited to the described embodiments, but can be implemented in various different forms, and one or more of the components of the embodiments can be selectively combined or substituted for each other within the scope of the technical concept of the present invention.

[0023] Furthermore, unless otherwise clearly defined and described, terms (including technical and scientific terms) used in the embodiments of the present invention may be interpreted in the sense that they are commonly understood by a person of ordinary skill in the art to which the present invention belongs, and commonly used terms, such as dictionary-defined terms, may be interpreted in the context of the relevant art.

[0024] Furthermore, the terms used in the examples of the present invention are intended to explain the examples and are not intended to limit the present invention.

[0025] In this specification, unless otherwise specified, the singular form can also include the plural form, and when it is stated as "A and (and) at least one (or more) of B and C," it can include one or more of all combinations of A, B, and C.

[0026] Furthermore, when describing components of the embodiments of the present invention, terms such as first, second, A, B, (A), (B), etc. are used to distinguish the components from other components, and the terms do not limit the essence, order, or sequence of the components.

[0027] Furthermore, when a component is described as being "coupled," "coupled," or "connected" to another component, it includes not only cases where the component is directly "coupled," "coupled," or "connected" to the other component, but also cases where the component is "coupled," "coupled," or "connected" by another component between the component and the other component.

[0028] Furthermore, when described as being formed or disposed "above" or "below" each component, "above" or "below" can include not only cases where two components are in direct contact with each other, but also cases where they are "connected" by one or more other components. Furthermore, when expressed as "above" or "below," it can include not only the upward direction but also the downward direction relative to one component.

[0029] Modifications of the present embodiments may include some components of each embodiment and some components of other embodiments. That is, a modification may include one embodiment of various embodiments, but omit some components and include some components of the corresponding other embodiment. Or vice versa. Features, structures, effects, etc. described in the embodiments are included in at least one embodiment and are not necessarily limited to one embodiment. Furthermore, features, structures, effects, etc. exemplified in each embodiment may be combined or modified in other embodiments by a person skilled in the art to which the embodiments belong. Therefore, content related to such combinations and modifications should be interpreted as being included within the scope of the embodiments.

[0030] Fig. 1 is a diagram showing a communication module according to an embodiment of the present invention. Fig. 2 is a diagram showing the shielding performance of the communication module according to an embodiment of the present invention. Figs. 3 and 4 are diagrams showing the communication module according to an embodiment of the present invention. Fig. 5 is a diagram showing the shielding performance of the communication module according to an embodiment of the present invention. Fig. 6 is a diagram showing the communication module according to an embodiment of the present invention. Fig. 7 is a diagram showing the signal transmission path of the communication module according to an embodiment of the present invention. Figs. 8 to 12 are diagrams for explaining the layout of the communication module according to an embodiment of the present invention.

[0031] A communication module according to one embodiment of the present invention is composed of a substrate 110, a first chipset 120, a second chipset 130, a shielding layer 140, a grounding layer 150, and first vias 160, 161, and may include a shielding area 170, a second via 162, an element 180, or a shielding can 190.

[0032] The substrate 110 may be a planar printed circuit board. The substrate 110 may include multiple layers. The multiple layers may be stacked to form a single substrate.

[0033] The first chipset 120 is embedded in the substrate 110. The first chipset 120 is embedded in a space inside the substrate 110. A cavity space in which the first chipset 120 can be placed is formed inside the substrate 110, and the first chipset 120 can be embedded by being placed inside the cavity space. The substrate 110 is made up of multiple layers, and the cavity space can be formed inside some of the multiple layers.

[0034] The first chipset 120 may be disposed in the space inside the substrate and electrically connected to the substrate 110 from above. The first chipset 120 may be electrically connected to the upper portion of the cavity, i.e., in contact with the substrate 110. The first chipset 120 may be electrically connected to the substrate 110 in a BGA (Ball Grid Array), PGA (Pin Grid Array), or LGA (Land Grid Array) manner. The first chipset 120 may also be fixed in the cavity by including one or more support structures supported in the cavity.

[0035] The second chipset 130 is disposed on the substrate 110. The second chipset 130 may be disposed on the top surface of the substrate 110, not inside the substrate 110. The second chipset 130 may be soldered to the substrate 110 and electrically connected thereto. The second chipset 130 may be electrically connected to the substrate 110 in a BGA (Ball Grid Array), GA (Pin Grid Array), or LGA (Land Grid Array) manner.

[0036] The first chipset 120 and the second chipset 130 may include the same type of communication chip. The first chipset 120 and the second chipset 130 may include a Bluetooth chip or a Wi-Fi chip. The Wi-Fi chip may be a dual-band (RSDB) Wi-Fi chip that includes the 2.4 GHz band and the 5 GHz band. In an in-vehicle environment, the 5 GHz band allows for high data rates and a strong Wi-Fi signal, while the 2.4 GHz band can continue to support legacy devices at optimal speeds. Because the 5 GHz Wi-Fi band is faster and more stable, high-priority Wi-Fi traffic can use this band, while the 2.4 GHz band can be used for general Wi-Fi traffic. For example, the 5 GHz band can be used to drive vehicle communication requirements such as rear-seat entertainment and smartphone infotainment connectivity, while the car's Wi-Fi hotspot can operate at 2.4 GHz. This allows the vehicle to support legacy Wi-Fi devices that can connect to the Internet, while also providing a fast, clean, and stable 5GHz Wi-Fi connection to the vehicle's internal systems, which need it most.

[0037] The first chipset 120 and the second chipset 130 may be single baseband chipsets that can support concurrent operation. When two single baseband chipsets operate simultaneously, communication performance may be reduced due to time division, but the first chipset 120 and the second chipset 130 can operate concurrently without time division.

[0038] The first chipset 120 and the second chipset 130 include the same Wi-Fi chip, but one of the first chipset 120 and the second chipset 130 can operate at 2.4 GHz Wi-Fi and the other at 5 GHz Wi-Fi. Alternatively, both chipsets can operate at either 2.4 GHz Wi-Fi or 5 GHz Wi-Fi. In this way, they operate simultaneously but completely independently of each other, optimizing the performance of each network.

[0039] Alternatively, the first chipset 120 and the second chipset 130 may include various wireless communication chips of the same type.

[0040] When two identical communication chips are formed on one substrate 110, the substrate size increases. Therefore, the first chipset 120 may be embedded inside the substrate 110 and the second chipset 130 may be disposed on top of the substrate, thereby reducing the size of the substrate 110. The first chipset 120 and the second chipset 130 may be at least partially overlapped in the vertical direction of the substrate 110. The first chipset 120 and the second chipset 130 may be aligned and overlapped in the vertical direction of the substrate 110, or may be disposed so as to overlap at least partially, thereby reducing the size of the substrate 110. Areas where frequency interference occurs frequently may be disposed so as not to overlap each other.

[0041] The shield layer 140 is disposed between the first chip set 120 and the second chip set 130, the ground layer 150 is disposed under the substrate 110, and the first via 160 connects the shield layer 140 and the ground layer 150.

[0042] The shield layer 140, the ground layer 150, and the first vias 160 are arranged to surround the first chipset 120, thereby shielding the first chipset 120. The first chipset 120 is embedded inside the substrate 110, and the second chipset 130 is arranged on the substrate 110, which may affect the first chipset 120. If the first chipset 120 and the second chipset 130 include the same type of communication chip and operate simultaneously, it may be difficult to ensure performance due to noise and frequency interference. By shielding the first chipset 120 with the shielding part, it is possible to reduce noise and frequency interference between the first chipset 120 and the second chipset 130 and ensure performance.

[0043] The shield layer 140 may be disposed between the first chipset 120 and the second chipset 130 in a substrate region where the first chipset 120 and the second chipset 130 overlap. Because the first chipset 120 and the second chipset 130 face each other while overlapping with the substrate 110 in between, frequency interference may occur at the overlapping and facing positions. To prevent this, the shield layer 140 may be disposed in the substrate region where the first chipset 120 and the second chipset 130 overlap. The shield layer 140 may have a planar shape and be stacked on top of the substrate 110. Alternatively, the shield layer 140 may be stacked inside the substrate 110. In this case, one of the multiple layers forming the substrate 110 may be formed as the shield layer 140. The shield layer 140 may include a non-magnetic material and an insulating layer.

[0044] The ground layer 150 may be disposed under the substrate 110. The ground layer 150 may be included under the substrate 110 to form a ground layer for shielding. The ground layer 150 may form a ground (GND). The ground layer 150 may be stacked under the substrate 110 in a planar shape. Alternatively, it may be stacked inside the substrate 110. In this case, one of the multiple layers forming the substrate 110 may be formed as the ground layer 150.

[0045] Here, a first via 160 may be included to electrically connect the shield layer 140 and the ground layer 150 of the substrate. The first via 160 may be arranged outside the first chipset 120, and the first via 160 may be arranged outside the second chipset 130. A plurality of first vias 160 may be included, and the first vias 160 may be arranged spaced apart from each other. The first vias 160 may penetrate the substrate 110 to electrically connect the shield layer 140 and the ground layer 150. The first chipset 120 or the second chipset 130 may be electrically connected to the ground layer 150 via the shield layer 140 and the first via 160.

[0046] The width of the first via 160 may be 4±2 um to 11±2 um, and when the substrate 110 is composed of multiple layers, the width of the first via 160 may vary depending on the characteristics or connection relationship of each layer.

[0047] The shielding performance of a communication module including a shield layer 140, a ground layer 150, and a first via 160 connecting the shield layer 140 and the ground layer 150 is shown in FIG. 2. FIG. 2(A) is a diagram showing a near field, indicating a shielding performance of -17 dB. However, an interference signal from the shield layer is included in the direction above the first chipset 120. FIG. 2(B) is a diagram showing an S-current, indicating a performance of -40 A / M2.

[0048] The shield region 170 may penetrate the shield layer 140 and be disposed outside the first via 160. The shield region 170 may extend in the vertical direction of the substrate 110 along the outer periphery of the first chipset 120. As shown in FIGS. 3 and 4 , the shield region 170 may extend in the vertical direction of the substrate 110, dividing the substrate 110 into an inner region of the shield region 170 and an outer region of the shield region 170. The shield region 170 may be formed along the outer periphery of the first chipset 120 to shield the first chipset 120. The shield region 170 may be formed by cutting and removing gold from the substrate 110. The shield region 170 may be formed by cutting and removing the metal portion inside the substrate, i.e., each layer. For example, a copper cut may be performed. Each layer of the substrate 110 may be coated with a metal such as copper, and the coated metal may be removed at predetermined intervals to form the shield region 170. In this case, the thickness of the shielding region 170 may be 0.1 mm or more. The thickness of the shielding region is the distance between the inner region and the outer region separated by the shielding region, and the wider the distance, the greater the shielding effect. However, the distance may be limited by the size of the communication module and the area in which elements included in the communication module must be arranged.

[0049] When forming the shielding area, the dielectric constant of PI SUBSTRATE is 3.3, and the simulation results show that the target 10dB shielding performance can be confirmed with a value of 0.1mm or more.

[0050] The shielding region 170 may include a groove surrounding the first chipset 120. Here, the groove may be formed by cutting away metal from the substrate 110. For example, it may be formed by performing a copper cut. The groove may interrupt at least a portion of the shielding layer 140. The width of the groove interrupting the shielding layer 160 may be 0.1 mm or more. The wider the width of the groove interrupting the shielding layer 160, the greater the shielding effect. However, the spacing may be limited by the size of the communication module and the area in which elements included in the communication module must be arranged. By shielding the first chipset 120 by forming not only the shielding layer 140 that shields the first chipset 120 from above and below, but also the shielding region 170 that shields the first chipset 120 from the left and right, noise and frequency interference between the first chipset 120 and the second chipset 130 can be minimized.

[0051] The shielding region 170 may be disposed apart from the outer periphery of the first chipset 120. That is, the shielding region 170 may be disposed closer to the outside of the substrate 110 than the first chipset 120. In this case, the first via 160 may be disposed between the first chipset 120 and the shielding region 170. Since frequency interference may occur at the position of the first via 160 even when the shielding layer 140 is formed, the first via 160 may be disposed between the first chipset 120 and the shielding region 170 so that the shielding region 170 is disposed outside the via 160.

[0052] The shield region 170 may extend from the top of the substrate 110 to the top of the ground layer 150 laminated on the bottom of the substrate. The shield region 170 may extend to the shield layer 140, which may also be divided into a first shield layer region 141, which is an inner region of the shield region 170, and a second shield layer region 142, which is an outer region. The shield region 170 may form an open region, with the first shield layer region 141 disposed inside the open region and the second shield layer region 142 disposed inside the open region. Here, the separation distance between the first shield layer region 141 and the second shield layer region 142 may be 0.1 mm or more. Alternatively, the shield layer 140 may be formed only in the inner region of the shield region 170.

[0053] The second via 162 is disposed outside the shielding region 170 and may connect the shield layer 140 and the ground layer 150. When the shielding layer 140 is separated into the first shielding layer region 141 and the second shielding layer region 142 by the shielding region 170, the first shielding layer region 141 is connected to the ground layer 150 through the first via 161, but the second shielding layer region 142 is separated from the first via 161 by the shielding region 170 and is therefore unlikely to be connected to the ground layer 150 through the first via 161. In this case, the second shielding layer region 142 may be electrically connected to the ground layer 150 through the second via 162 disposed outside the shielding region 170. That is, the first via 161 may connect the first shielding layer region 141 and the ground layer 150, and the second via 162 may connect the second shielding layer region 142 and the ground layer 150.

[0054] The shielding performance of a communication module including shield layer 140, ground layer 150, first via 161 connecting first shield layer region 141 of shield layer 140 to ground layer 150, and second via 162 connecting second shield layer region 142 of shield layer 140, which is separated from first shield layer region 141 of shield layer 140 at shield region 170, to ground layer 150, is shown in FIG. 5. FIG. 5A is a diagram showing near field (NEAR FIELD) and shows shielding performance of -27 dB, which is an improvement of about 10 dB compared to FIG. 2A, and it can be seen that interference signals are reduced toward the top of first chipset 120. FIG. 5B is a diagram showing S-CURRENT and shows performance of -50 A / M2, which can be seen to show improved shielding performance compared to FIG. 2B.

[0055] On the upper part of the substrate 110, peripheral elements 180 of the chipset may be disposed in an area where the second chipset 130 is not disposed. Some of the elements may be embedded inside the substrate 110. The elements 180 may be disposed in an area outside the substrate 110 by the shielding area 170. This may minimize the influence of the first chipset 120.

[0056] The communication module may include a cover that covers the substrate 110. The cover may include a shield can 190. The shield can 190 has a cover shape and covers the communication module to shield it from the outside. The shield can may be made of a metal material.

[0057] Alternatively, the upper region of the substrate 110 may be molded. The second chipset 130 or other elements may be disposed on the upper portion of the substrate 110, and the corresponding components may be molded.

[0058] The shielding region 170 extends from the top of the substrate 110 to the ground layer 150, dividing the shielding layer 140 or the top of the substrate 110 into an internal region and an external region. That is, the internal region and the external region are separated on the top of the substrate 110, which may make it difficult to transmit and receive signals to and from other devices 180 or the outside. A first via 161 disposed in the internal region of the shielding region 170 and a second via 162 disposed in the external region of the shielding region 170 may form a bypass path for transmitting and receiving signals. The first chipset 120 or the second chipset 130 is electrically connected to one of the layers of the shielding layer 140 or the substrate 110, and is electrically connected to the ground layer 150 through the first via 161 disposed in the internal region of the shielding region 170 and to the second via 162 disposed in the external region of the shielding region 170 through the ground layer 150, thereby electrically connecting to the device 180 or the outside to transmit and receive signals.

[0059] This ensures the simultaneous operation of two identical chipsets, and improves shielding performance by forming a shielding layer and a shielding wall that shield the chipsets embedded in the substrate.

[0060] The communication module according to the embodiment of the present invention can be formed of multiple layers. For example, as shown in Fig. 8, it can be composed of 1st to 11th layers, and the layout of each layer can be formed as shown in Figs. 9 to 12.

[0061] Here, the first layer may be the bottom layer of the substrate 110, and the eleventh layer may be the top layer of the substrate 110. As shown in FIGS. 9 to 11, the ground layer 150 (GND) may be formed on the first layer (LAYER), and the shield layer 190 may be formed on the seventh layer (LAYER7). Signal lines connected to the chipset and components may be formed on each layer. In this case, it may be confirmed that the shield layer 190 is formed to have an area equal to or larger than the area of ​​the first chipset 120. As shown in FIG. 13, the shield layer 190 may include an area that overlaps the entire area of ​​the first chipset 120. Vias may be formed on each layer, as shown in FIGS. 14 and 15. The shield layer (A) and the ground layer (C) may be connected to each other through each via (B).

[0062] 16 and 17 are diagrams showing the size of a communication module implemented in a chip according to an embodiment of the present invention, and show the sizes of the 11th layer, 6th layer, and first chipset (UBM) from the top layer (TOP). For example, the size of the communication module may be 12000 x 12000 um.

[0063] A vehicle according to an embodiment of the present invention may include a communication module for performing vehicle communication. A detailed description of the vehicle communication module corresponds to the detailed description of the communication module in Figures 1 to 17, so duplicated description will be omitted below.

[0064] The communication module includes a substrate, a first chipset embedded in the substrate, a second chipset disposed on top of the substrate, a shielding layer disposed between the first chipset and the second chipset, a grounding layer connected to the shielding layer and disposed on the bottom of the substrate, and a first via connecting the shielding layer and the grounding layer.

[0065] The first via may be disposed outside the second chipset, and the number of the first vias may be multiple. The first via may penetrate the shielding layer and include a shielding region disposed outside the first via. The shielding region may include a groove surrounding the first chipset. The groove may interrupt at least a portion of the shielding layer. A width of the groove interrupting the shielding layer may be 0.1 mm or more. The shielding region may be disposed closer to the outside of the substrate than the first chipset. The second via may be disposed outside the shielding region and connect the shielding layer to the ground layer. The shielding layer may include a first shielding layer region disposed inside an open region and a second shielding layer region disposed outside the open region. The first via may connect the first shielding layer region to the ground layer and the second via may connect the second shielding layer region to the ground layer. An area of ​​the first shielding layer region may be equal to or greater than an area of ​​the first chipset. A separation distance between the first shielding layer region and the second shielding layer region may be 0.1 mm or more.

[0066] The features, structures, effects, etc. described in the above embodiments are included in at least one embodiment and are not necessarily limited to one embodiment. Furthermore, the features, structures, effects, etc. exemplified in each embodiment can be combined or modified in other embodiments by a person skilled in the art to which the embodiment belongs. Therefore, content related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

[0067] Those skilled in the art will understand that the present invention can be embodied in various modified forms without departing from the essential characteristics thereof. Therefore, the disclosed method should be considered in an illustrative rather than a restrictive sense. The scope of the present invention is defined in the claims, not the foregoing description, and all variations within the scope of the claims should be construed as being within the scope of the present invention.

Claims

1. A substrate; a first chipset embedded within the substrate; a second chipset disposed on the upper portion of the substrate; a shielding layer disposed between the first chip set and the second chip set; a ground layer connected to the shield layer and disposed under the substrate; a first via connecting the shield layer and the ground layer.

2. The communication module according to claim 1 , wherein the first via is disposed outside the second chipset.

3. The communication module according to claim 1 , wherein the number of the first vias is plural.

4. The communication module according to claim 1 , further comprising a shielding region that penetrates the shielding layer and is disposed outside the first via.

5. The communication module according to claim 4 , wherein the shielding area includes a groove surrounding the first chipset.

6. The communication module according to claim 5 , wherein the groove interrupts at least a portion of the shielding layer.

7. The communication module according to claim 4 , wherein the shielding area is disposed closer to the outside of the substrate than the first chipset.

8. The communication module according to claim 4 , further comprising a second via arranged outside the shielding region and connecting the shielding layer and the ground layer.

9. The communication module according to claim 8 , wherein the shield layer includes a first shield layer region disposed inside the open region and a second shield layer region disposed outside the open region.

10. The communication module according to claim 9 , wherein the first via connects the first shield layer region and the ground layer, and the second via connects the second shield layer region and the ground layer.

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