Plate assemblies, process kits, and processing chambers for semiconductor manufacturing

The plate assembly with opaque materials and substrate support system addresses uniformity and cleaning challenges in semiconductor processing, improving deposition efficiency and ease of cleaning.

JP2026503634AActive Publication Date: 2026-01-29APPLIED MATERIALS INC
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Patent Information

Application Number
JP2025543045
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-03-16
Filing Date
2024-01-17
Publication Date
2026-01-29
Estimated Expiration
2044-01-17

AI Technical Summary

Technical Problem

Existing semiconductor processing technologies face challenges in achieving uniform deposition, contamination control, and efficient cleaning, particularly in complex deposition processes.

Method used

The implementation of a plate assembly with an inner section and arc-shaped outer sections made of opaque materials, along with a substrate support assembly and gas injection/exhaust systems, enhances heating uniformity and adjustability, while minimizing gas leakage and facilitating easy cleaning.

Benefits of technology

This configuration promotes uniform gas flow and temperature control, improving deposition uniformity and ease of cleaning, thereby enhancing the efficiency and effectiveness of semiconductor manufacturing processes.

✦ Generated by Eureka AI based on patent content.

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Abstract

[0002] Embodiments of the present disclosure relate to a plate assembly, a process kit, a processing chamber, and related components and methods for semiconductor manufacturing. In one implementation, a plate assembly disposed within a processing chamber includes an inner section including an opaque material. The inner section has an outer diameter. The plate assembly includes a first outer section that is arc-shaped and includes an opaque material. The first outer section includes a first inner shoulder and a first inner lip extending inward relative to the first inner shoulder.
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Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] Embodiments of the present disclosure relate to plate assemblies, process kits, processing chambers, and related components and methods for semiconductor manufacturing. [Background technology]

[0002]

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One method of processing a substrate involves depositing a material, such as a semiconductor material or a conductive material, on the surface of the substrate. For example, epitaxy is a deposition process that deposits films of various materials on the surface of a substrate in a processing chamber.

[0003] During processing, gases may flow to different parts of the chamber (e.g., diffusion flows), which can interfere with deposition uniformity and film thickness. Efforts to address such problems may involve contamination, difficult cleaning, and / or limited thermal control and tunability. Such problems may be exacerbated by the relatively complex deposition process.

[0004]

[0004] Therefore, there is a need for improved devices and methods that facilitate one or more of fast and efficient heating, ease of cleaning, and / or heat zone control and adjustability. Summary of the Invention

[0005]

[0005] Embodiments of the present disclosure relate to plate assemblies, process kits, processing chambers, and related components and methods for semiconductor manufacturing.

[0006] In one embodiment, a plate assembly disposed within a processing chamber includes an inner section including an opaque material. The inner section has an outer diameter. The plate assembly includes a first outer section that is arc-shaped and includes an opaque material. The first outer section includes a first inner shoulder and a first inner lip extending inward relative to the first inner shoulder.

[0007] In one embodiment, a process kit for placement in a processing chamber includes a liner including an inner surface, the inner surface having an inner liner diameter. The process kit includes a plate assembly. The plate assembly includes an inner section having an outer diameter smaller than the inner liner diameter and one or more arc-shaped outer sections. The one or more outer sections include an outermost section sized and shaped to cooperate with the liner.

[0008] In one embodiment, a processing chamber applicable for use in semiconductor manufacturing includes a chamber body. The chamber body includes an interior space, a plurality of gas injection passages formed within the chamber body, and one or more gas exhaust passages formed within the chamber body. The processing chamber includes one or more heat sources configured to generate heat and a liner disposed within the interior space and along at least a portion of one or more sidewalls of the chamber body. The liner includes an inner surface. The processing chamber includes a plate assembly disposed within the interior space and at least partially defining a processing space of the interior space. The plate assembly includes an inner section including an opaque material and one or more outer sections having an arc shape and including an opaque material. The one or more outer sections include an outermost section connecting with the liner. The processing chamber includes a substrate support assembly disposed within the processing space. The substrate support assembly includes a plurality of lift pins and one or more substrate supports.

[0009]

[0009] So that the above features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be made by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered to limit the scope of the present disclosure, as other equally effective embodiments may also be acceptable. [Brief explanation of the drawings]

[0010] [Figure 1]

[0010] FIG. 1 is a schematic cross-sectional side view of a processing device according to one embodiment. [Figure 2]

[0011] 2 is a schematic cross-sectional side view of the processing apparatus shown in FIG. 1, according to one embodiment. [Figure 3]

[0012] 3 is a schematic enlarged view of the plate assembly shown in FIGS. 1 and 2, according to one embodiment. FIG. [Figure 4]

[0013] FIG. 4 is a schematic, partially enlarged, axonometric view of the plate assembly shown in FIG. 3, according to one embodiment. [Figure 5]

[0014] 5 is an enlarged view of one of the one or more first spacers shown in FIGS. 3 and 4, according to one embodiment. FIG. [Figure 6]

[0015] 5 is an enlarged view of one of the one or more first spacers shown in FIGS. 3 and 4, according to one embodiment. FIG. [Figure 7]

[0016] 5 is an enlarged view of one of the one or more first spacers shown in FIGS. 3 and 4, according to one embodiment. FIG. [Figure 8]

[0017] 5 is an enlarged view of one of the one or more first spacers shown in FIGS. 3 and 4, according to one embodiment. FIG. [Figure 9]

[0018] 1 is a schematic axonometric view of a spacer, according to one embodiment. [Figure 10]

[0019] 1 is a schematic axonometric view of a spacer, according to one embodiment. [Figure 11]

[0020] 1 is a schematic axonometric view of a plurality of spacers, according to one embodiment. [Figure 12]

[0021] 4 is a schematic graphical representation of a heating profile of various zones of a top substrate according to one embodiment; [Figure 13]

[0022] 5 is a partial schematic axonometric top view of the plate assembly shown in FIGS. 3 and 4, according to one embodiment. [Figure 14]

[0023] FIG. 14 is a partial schematic axonometric bottom view of the plate assembly shown in FIG. 13, according to one embodiment. [Figure 15]

[0024] FIG. 14 is a partial schematic axonometric bottom view of the plate assembly shown in FIG. 13, according to one embodiment. [Figure 16]

[0025] 1 is a schematic cross-sectional side view of a plate assembly according to one embodiment. [Figure 17]

[0026] 1 is a schematic block diagram of a method for processing a substrate for semiconductor manufacturing, according to one embodiment. [Figure 18]

[0027] 1 is a schematic cross-sectional side view of a plate assembly according to one embodiment. [Figure 19]

[0028] 4 is a schematic graphical representation of a heating profile of various zones of a top substrate according to one embodiment; DETAILED DESCRIPTION OF THE INVENTION

[0011]

[0029] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements common to the figures. It is believed that elements and features of one embodiment may be beneficially incorporated in multiple other embodiments without further description.

[0012]

[0030] SUMMARY OF THE DISCLOSURE Embodiments of the present disclosure relate to plate assemblies, process kits, processing chambers, and related components and methods for semiconductor manufacturing.

[0013]

[0031] It is contemplated that the present disclosure contemplates that terms such as "couple," "connection," "connection," and "coupled" may include, but are not limited to, welding, fusion, melt bonding, interference fit, and / or fastening (e.g., using bolts, threaded connections, pins, and / or screws). It is contemplated that the present disclosure contemplates that terms such as "couple," "connection," "connection," and "coupled" may include, but are not limited to, integral formation. It is contemplated that the present disclosure contemplates that terms such as "couple," "connection," "connection," and "coupled" may include, but are not limited to, direct bonding and / or indirect bonding (e.g., indirect bonding via components such as links, blocks, and / or frames).

[0014]

[0032] FIG. 1 is a schematic cross-sectional side view of a processing apparatus 100, according to one embodiment. Side heat sources 118a, 118b, shown in FIG. 2, are not shown in FIG. 1 for the sake of visual clarity. The processing apparatus 100 includes a processing chamber having a chamber body 130 that defines an interior space 124. The processing chamber 100 includes a plate assembly 300 disposed within the interior space and at least partially defining a processing space 128 of the interior space 124. The plate assembly 300 is described further below.

[0015]

[0033] A cassette 1030 is disposed within the processing space 128 and is at least partially supported by a substrate support assembly 119 (e.g., a pedestal assembly). The cassette 1030 includes a cassette plate 1032 and multiple levels for supporting multiple substrates 107 for simultaneous processing (e.g., epitaxial deposition). This disclosure contemplates that the cassette plate 1032 may be omitted. In one embodiment shown in FIG. 1 , the cassette 1030 supports four substrates. The cassette 1030 may support, without limitation, two substrates 107, three substrates 107, five substrates 107, six substrates 107, or eight substrates 107. In one or more embodiments, the cassette 1030 supports two substrates 107 or three substrates 107. The processing apparatus 100 includes an upper window 116, such as a dome, disposed between the lid 104 and the processing space 128.

[0016]

[0034] The processing apparatus 100 includes a lower window 115 disposed below the processing space 128. One or more upper heat sources 106 are disposed above the processing space 128 and the upper window 116. The one or more upper heat sources 106 may be radiant heat sources such as lamps (e.g., halogen lamps). The one or more upper heat sources 106 are disposed between the upper window 116 and the lid 104. The upper heat sources 106 are disposed to provide uniform heating of the substrate 107. One or more lower heat sources 138 are disposed below the processing space 128 and the lower window 115. The one or more lower heat sources 138 may be radiant heat sources such as lamps (e.g., halogen lamps). The lower heat sources 138 are disposed between the lower window 115 and a floor 134 of the interior space 124. The lower heat sources 138 are disposed to provide uniform heating of the substrate 107.

[0017]

[0035] The present disclosure contemplates that other heat sources may be used (in addition to or instead of lamps) for the various heat sources described herein, for example, resistive heaters, light emitting diodes (LEDs), and / or lasers may be used for the various heat sources described herein.

[0018]

[0036] The upper and lower windows 116, 115 may be transparent to infrared radiation, such as by transmitting at least 80% (e.g., at least 95%) of the infrared radiation. The upper and lower windows 116, 115 may be a quartz material (e.g., clear quartz). In one or more embodiments, the upper window 116 includes an inner window 193 and an outer window support 194. The inner window 193 may be a thin quartz window. The outer window support 194 supports the inner window 193 and is at least partially disposed within the support groove. In one or more embodiments, the lower window 115 includes an inner window 187 and an outer window support 188. The inner window 187 may be a thin quartz window. The outer window support 188 supports the inner window 187.

[0019]

[0037] A substrate support assembly 119 is disposed within the processing space 128. One or more liners 180 are disposed within the processing space 128 and surround the substrate support assembly 119. The one or more liners 180 facilitate shielding the chamber body 130 from processing chemistries within the processing space 128. The chamber body 130 is at least partially disposed between the upper window 116 and the lower window 115. The one or more liners 180 are disposed between the processing space 128 and the chamber body 130. The liners 180 include an upper liner 181 and one or more lower liners 183.

[0020]

[0038] The upper liner 181 and plate assembly 300 are at least part of a process kit disposed within the processing apparatus 100. The upper liner 181 includes an inner surface 195 having an inner liner diameter ID1 and a recess 109 formed within the inner surface 195.

[0021]

[0039] The processing apparatus 100 includes a plurality of gas injection passages 182 formed in the chamber body 130 and in fluid communication with the processing space 128, and one or more gas exhaust passages 172 (several of which are shown in FIG. 1 ) formed in the chamber body 130 opposite the plurality of gas injection passages 182. The one or more gas exhaust passages 172 are in fluid communication with the processing space 128. Each of the plurality of gas injection passages 182 and the one or more gas exhaust passages 172 is formed through one or more sidewalls of the chamber body 130 and through one or more liners 180 along the one or more sidewalls of the chamber body 130.

[0022]

[0040] Each gas inlet passage 182 includes a gas channel 185 formed in the chamber body 130 and one or more gas openings 186 (one shown in FIG. 1 ) formed in one or more liners 180. One or more supply conduit systems are in fluid communication with the gas inlet passages 182. In FIG. 1 , an inner supply conduit system 121 and an outer supply conduit system 122 are in fluid communication with the gas inlet passages 182. The inner supply conduit system 121 includes multiple inner gas boxes 123 mounted to the chamber body 130 in fluid communication with an inner set of the gas inlet passages 182. The outer supply conduit system 122 includes multiple outer gas boxes 117 mounted to the chamber body 130 in fluid communication with an outer set of the gas inlet passages 182. The present disclosure contemplates that various gas supply systems (e.g., supply conduit system(s), gas injection passages, and / or gas boxes different from those shown in FIG. 1) may be used.

[0023]

[0041] The processing apparatus 100 includes a flow guide structure 150 having one or more flow diverters 111 disposed outside the cassette 1030. Four flow diverters 111 are shown in FIG. 1 . Other numbers of flow diverters 111 (e.g., two or three) may be used. The flow guide structure 150 divides the processing space into multiple flow levels 153 (four flow levels are shown in FIG. 1 ). In one or more embodiments, the flow guide structure 150 includes at least two (e.g., at least three) flow levels 153. The multiple gas injection passages 182 are arranged as multiple injection levels. Thereby, each gas injection passage 182 corresponds to one of the multiple injection levels. Each injection level is aligned with a respective flow level 153.

[0024]

[0042] The flow guide structure 150, one or more liners 180 (upper liner 181 and / or one or more lower liners 183), and / or cassette 1030 are formed from one or more of quartz (transparent quartz, e.g., clear quartz, opaque quartz, e.g., white quartz and / or black quartz), silicon carbide (SiC), and / or graphite coated with SiC.

[0025]

[0043] The one or more flow diverters 111 are coupled to and / or at least partially supported by the one or more liners 180. Multiple portions of the flow guide structure 150 (e.g., the one or more flow diverters 111) may each act as a preheat ring for each flow level 153. The one or more flow diverters 111 may be referred to as one or more preheat rings.

[0026]

[0044] As explained below, the present disclosure contemplates that the flow guide structure 150 may be omitted.

[0027]

[0045] During a process (such as during an epitaxial deposition process), one or more process gases P1 are supplied to the processing space 128 through the inner supply conduit system 121 and the outer supply conduit system 122 and through the plurality of gas injection passages 182. The one or more process gases P1 are supplied from one or more gas sources 196 in fluid communication with the plurality of gas injection passages 182. Each of the gas injection passages 182 is configured to direct the one or more process gases P1 generally radially inward toward the cassette 1030. Thus, in one or more embodiments, the gas injection passages 182 may be part of a cross-flow gas injector. The flow(s) of the one or more process gases P1 may be divided into the plurality of flow levels 153. In one or more embodiments, a plate assembly 300 separates the processing space 128 from the upper section 131 of the interior space 124. At least at the top flow level 153 (or the single flow level 153, if a single flow level 153 is used), one or more process gases P1 can be guided (using the plate assembly 300) along a streamlined flow path, thereby reducing or eliminating diffusive flow away from the top substrate 107 (or the single substrate 107, if a single substrate 107 is used). The plate assembly 300 can promote a more uniform flow of one or more process gases P1 along the top flow level 153 compared to the other flow levels 153 below the top flow level 153.

[0028]

[0046] The processing apparatus 100 includes an exhaust conduit system 190. One or more process gases P1 are exhausted through exhaust gas openings formed in one or more liners 180, exhaust gas channels formed in the chamber body 130, and then through an exhaust gas box 1091. The one or more process gases P1 flow from the exhaust gas box 1091 to an optional common exhaust box 1092 and then can flow out through conduits using one or more pumping devices 197 (e.g., one or more vacuum pumps).

[0029]

[0047] The one or more process gases P1 may include, for example, a purge gas, a cleaning gas, and / or a deposition gas. The deposition gas may include, for example, one or more reactive gases carried in one or more carrier gases. The one or more reactive gases may include, for example, a silicon- and / or germanium-containing gas (such as silane (SiH), disilane (SiH), dichlorosilane (SiHCl), and / or germane (GeH)), a chlorine-containing etching gas (such as hydrogen chloride (HCl)), and / or a dopant gas (such as phosphine (PH) and / or diborane (BH)). The one or more purge gases may include, for example, one or more of argon (Ar), helium (He), nitrogen (N), hydrogen chloride (HCl), and / or hydrogen (H).

[0030]

[0048] A purge gas P2 supplied from a purge gas source 129 is introduced into the lower region 105 of the processing space through one or more purge gas inlets 184 formed in the sidewall of the chamber body .

[0031]

[0049] The one or more purge gas inlets 184 are positioned at a height below the gas injection passages 182. If one or more liners 180 are used, one or more sections of the liner 180 may be positioned between the gas injection passages 182 and the one or more purge gas inlets 184. The one or more purge gas inlets 184 are configured to direct the purge gas P2 generally radially inward. The one or more purge gas inlets 184 may be configured to direct the purge gas P2 in an upward direction. During the film formation process, the substrate support assembly 119 is positioned to facilitate the purge gas P2 flowing generally along a path across the backside of the cassette 1030. The purge gas P2 exits the lower region 105 and is exhausted from the processing apparatus 100 through one or more purge gas exhaust passages 102 positioned on the opposite side of the processing space 128 from the one or more purge gas inlets 184.

[0032]

[0050] The substrate support assembly 119 includes a first support frame 199 and a second support frame 198 disposed at least partially around the first support frame 199. The first support frame 199 includes arms coupled to the cassette 1030, such that raising and lowering the first support frame 199 raises and lowers the cassette 1030. A plurality of lift pins 189 hang from the cassette 1030. Lowering the cassette 1030 and / or raising the second support frame 198 initiates contact between the lift pins 189 and the arms of the second support frame 198. As the cassette 1030 continues to lower and / or the second support frame 198 continues to raise, the lift pins 189 contact the substrates in the cassette 1030. The lift pins 189 thereby raise the substrates in the cassette 1030. The lower region 105 of the processing device 100 is defined between the floor 134 and the cassette 1030 .

[0033]

[0051] The first shaft 126 of the first support frame 199, the second shaft 125 of the second support frame 198, and the section 151 of the lower window 115 extend through ports formed in the lower portion 135 and floor 134 of the chamber body 130. Each shaft 125, 126 is coupled to one or more respective motors 164. The motors 164 are configured to independently raise, lower, and / or rotate the cassette 1030 using the first support frame 199 and to independently raise and lower the lift pins 189 using the second support frame 198. The first support frame 199 includes the first shaft 126 and a plurality of first arms 1021 configured to support the cassette 1030, which includes one or more substrate supports 112. The cassette 1030 includes a plurality of mounting columns 1081 that support the arcuate supports 112.

[0034]

[0052] The second support frame 198 includes the second shaft 125 and a plurality of second arms 1022 configured to interact with and support the lift pins 189. The bellows assembly 158 surrounds and closes a portion of the shafts 125, 126 disposed outside the chamber body 130 to facilitate reducing or eliminating vacuum leakage outside the chamber body 130.

[0035]

[0053] An opening 136 (substrate transfer opening) is formed through one or more sidewalls of the chamber body 130. The opening 136 can be used to transfer the substrate 107 to or from the cassette 1030, for example, into or out of the interior space 124. In one or more embodiments, the opening 136 includes a slit valve. In one or more embodiments, the opening 136 can be connected to any suitable valve that allows the passage of the substrate therethrough. The opening 136 is shown in ghost form in FIGS. 1 and 2 for visual clarity.

[0036]

[0054] The processing apparatus 100 may include one or more sensors 191, 192, 282, such as temperature sensors (e.g., optical pyrometers) or other metrology sensors, that measure temperature (or other parameters) within the processing apparatus 100 (e.g., at the surface of the upper window 116, the surface of the plate assembly 300, and / or one or more surfaces of the substrates 107, the flow guide structure 150, and / or the cassette 1030). The one or more sensors 191, 192 are disposed on the lid 104. One or more sensors 282 (e.g., lower pyrometers) are shown in FIG. 2 and are disposed below the lower window 115. The one or more sensors 282 may be disposed adjacent to and / or on the lower portion 135 of the chamber body 130.

[0037]

[0055] In one or more embodiments, the upper sensors 191, 192 are positioned toward the top of the cassette 1030, the plate assembly 300, and / or the top of the flow guiding structure 150. In one or more embodiments, the side sensor 281 (e.g., a side temperature sensor) is positioned toward the substrate support 112 of the cassette 1030. In one or more embodiments, the lower sensor 282 is positioned toward the bottom of the cassette 1030 (e.g., the underside of the cassette plate 1032), the bottom of the plate assembly 300, and / or the bottom of the flow guiding structure 150.

[0038]

[0056] The processing system 100 includes a controller 1070 configured to control the processing system 100 or its components. For example, the controller 1070 can control the operation of the components of the processing system 100 by using direct control of the components or by controlling a controller associated with the components. During operation, the controller 1070 enables data collection and feedback from each chamber to adjust and control the performance of the processing system 100.

[0039]

[0057] The controller 1070 generally includes a central processing unit (CPU) 1071, memory 1072, and support circuits 1073. The CPU 1071 may be any form of general-purpose processor that may be used in an industrial environment. The memory 1072, or non-transitory computer-readable medium, is accessible by the CPU 1071 and may be one or more memories (e.g., random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other form of local or remote digital storage). The support circuits 1073 are coupled to the CPU 1071 and may include cache, clock circuits, input / output subsystems, power supplies, etc.

[0040]

[0058] The various methods (e.g., method 1700) and operations disclosed herein may generally be implemented by CPU 1071, under control of CPU 1071, executing computer instruction code stored, for example, as software routines in memory 1072 (or the memory of a particular processing chamber). Execution of the computer instruction code by CPU 1071 causes CPU 1071 to control components of processing chamber 100 to perform steps according to the various methods and operations described herein. In one embodiment, which may be combined with other embodiments, memory 1072 (a non-transitory computer-readable medium) stores instructions that, when executed, cause the methods (e.g., method 1700) and operations (e.g., steps 1702-1712) described herein to be performed. Controller 1070 may, for example, communicate with heat sources, gas sources, and / or vacuum pump(s) of processing apparatus 100 to perform steps.

[0041]

[0059] Figure 2 is a schematic cross-sectional side view of the processing apparatus 100 shown in Figure 1, according to one embodiment. The cross-sectional view shown in Figure 2 is rotated by 55 degrees relative to the cross-sectional view shown in Figure 1.

[0042]

[0060] The processing apparatus 100 includes one or more side heat sources 118a, 118b (e.g., side lamps, side resistive heaters, side LEDs, and / or side lasers) positioned outside the processing space 128. The one or more second side heat sources 118b are located across the processing space 128 opposite the one or more first side heat sources 118a.

[0043]

[0061] 2, for visual clarity, the flow guide structure 150 is not shown. Furthermore, the present disclosure contemplates that the flow guide structure 150 may be omitted from the processing apparatus 100 depicted in FIGS. 1-2. In one such embodiment, one or more process gases P1 flow from the gas injection passage 182 to the outer ring of the processing space 128, then to openings 216 between and outside the substrate supports 112 (e.g., arc-shaped supports) of the cassette 1030, and then into the gaps between the substrates 107. The one or more process gases P1 exit the gaps and flow to openings 216 on the exhaust side of the substrates 107 (between and outside the substrate supports 112), to the outer ring of the processing space 128, and into one or more gas exhaust passages 172. The present disclosure also contemplates that multiple lines (e.g., conduits) within the processing space 128 may connect the gas injection passage 182 to each of the inlet openings of the cassette 1030.

[0044]

[0062] In addition to the one or more sensors 191, 192 disposed above the processing space 128 and above the second blocking plate 1062, the processing apparatus 100 may include one or more sensors 281, such as a temperature sensor (e.g., an optical pyrometer) or other metrology sensor, that measure the temperature (or other parameter) within the processing apparatus 100 (e.g., at the surface of the upper window 116, the surface of the plate assembly 300, and / or one or more surfaces of the substrates 107, the windows 257, and / or the cassette 1030). The windows 257 (if used) may be disposed in a gap between or formed within the one or more liners 180 (the upper liner 181 and / or the lower liners 183). One or more sensors 281 are side sensors (e.g., side pyrometers) that are disposed outside the processing space 128, outside the flow guide structure 150, and outside the windows 257. The one or more sensors 281 may, for example, be radially aligned with the plurality of windows 257 (shown in FIG. 2).

[0045]

[0063] One or more side sensors 281 (e.g., one or more pyrometers) can be used to measure the temperature within the processing space 128 from each side of the processing space 128. The side sensors 281 are arranged on multiple sensor levels (three sensor levels are shown in FIG. 2). In one or more embodiments, the number of sensor levels equals the number of heat source levels. Each side sensor 281 can be oriented horizontally or can be oriented (e.g., downward at an angle) toward the substrates 107 and substrate supports 112 on the respective level of the cassette 1030.

[0046]

[0064] The present disclosure contemplates that the side heat sources 118a, 118b, the window 257, and / or the side sensor 281 may be omitted.

[0047]

[0065] FIG. 3 is a schematic, enlarged view of the plate assembly 300 shown in FIGS. 1 and 2, according to one embodiment.

[0048]

[0066] FIG. 4 is a schematic, partially enlarged, axonometric view of the plate assembly 300 shown in FIG. 3, according to one embodiment.

[0049]

[0067] The plate assembly 300 includes an inner section 310. In one or more embodiments, the inner section 310 is circular (e.g., disk-shaped). The present disclosure contemplates that the shape of the inner section 310 may include a perfect circle. The present disclosure also contemplates that the circular shape of the inner section 310 may include one or more openings (such as notches) at the outer edge of the circular shape, whereby the outer edge is not a continuous circle. As an example, the circular shape of the inner section 310 may include an irregular circle. The inner section 310 has an outer diameter OD1. The outer diameter OD1 is smaller than the inner liner diameter ID1 of the upper liner 181 shown in FIG. 1 . The inner section 310 includes a shoulder 311 and a lip 312 extending outward relative to the shoulder 311.

[0050]

[0068] The plate assembly 300 includes one or more outer sections 330, 350, 370 that are arc-shaped. The plate assembly 300 includes a first outer section 330 that is arc-shaped (e.g., ring-shaped). The first outer section 330 includes a first inner shoulder 331 and a first inner lip 332 that extends inward relative to the first inner shoulder 331. The first outer section 330 includes a first outer shoulder 333 and a first outer lip 334 that extends outward relative to the first outer shoulder 333. The first inner shoulder 331 has a first shoulder diameter SD1 that is equal to or greater than the outer diameter OD1 of the inner section 310. The first outer shoulder 333 has a second shoulder diameter SD2 that is greater than the first shoulder diameter SD1.

[0051]

[0069] Plate assembly 300 includes a second outer section 350 that is arc-shaped (e.g., ring-shaped). Second outer section 350 includes a second inner shoulder 351 and a second inner lip 352 that extends inwardly relative to second inner shoulder 351. Second outer section 350 includes a second outer shoulder 353 and a second outer lip 354 that extends outwardly relative to second outer shoulder 353. Second inner shoulder 351 has a third shoulder diameter SD3 that is greater than or equal to second shoulder diameter SD2.

[0052]

[0070] The plate assembly 300 includes a third outer section 370 that is arc-shaped (e.g., ring-shaped). The third outer section 370 includes a third inner shoulder 371 and a third inner lip 372 that extends inwardly relative to the third inner shoulder 371. The third outer section 370 may include multiple ring segments circumferentially spaced apart from one another. The third outer section 370 is the outermost section sized and shaped to cooperate with the upper liner 181 shown in FIG. 1. In one or more embodiments, the third outer section 370 is at least partially retained within the recess 109 of the upper liner 181 (shown in FIG. 1). In one or more embodiments, the third outer section 370 is supported by a shelf of the upper liner 181. In one or more embodiments, the third outer section 370 is omitted, and the second outer section 350 is supported by a shelf of the upper liner 181.

[0053]

[0071] In one or more embodiments, the inner section 310 includes a disk body, the first outer section 330 includes a first ring body, and the second outer section 350 includes a second ring body. Each section 310, 330, 350 is a segment of the plate assembly 300. The sections 310, 330, 350 are supported using gravity. The second outer section 350 is at least partially supported using the upper liner 181, the first outer section 330 is at least partially supported using the second outer section 350, and the inner section 310 is at least partially supported using the first outer section 330.

[0054]

[0072] In one or more embodiments, inner section 310, first outer section 330, second outer section 350, and third outer section 370 each include an opaque material. Each outer section may be at least partially (e.g., completely) formed of and / or coated with an opaque material. The opaque material may absorb at least 80% (e.g., 95% or more) of light having wavelengths in the infrared range. In one or more embodiments, the opaque material includes one or more of silicon carbide (SiC), SiC-coated graphite, opaque quartz (e.g., white quartz), and / or black quartz.

[0055]

[0073] The plate assembly 300 includes one or more first spacers 380 sized and shaped to be disposed between the lip 312 of the inner section 310 and the first inner lip 332 of the first outer section 330. In one example, the height of the one or more first spacers 380 may be less than the height of the first inner shoulder 331 plus the height of the shoulder 311. In one example, the width of the one or more first spacers 380 may be less than the width of the lip 312 and less than the width of the first inner lip 332. The one or more first spacers 380 may be formed separately from the inner section 310 and the first outer section 330 (as shown in FIG. 3 ), or the one or more first spacers 380 may be integrally formed with the inner section 310 and / or the first outer section 330 (whereby the one or more first spacers 380 are one or more protrusions). The one or more first spacers 380 may abut the lip 312 and the first inner lip 332 (as shown in FIG. 3), or the one or more first spacers 380 may be fitted into the lip 312 and / or the first inner lip 332.

[0056]

[0074] The plate assembly 300 includes one or more second spacers 385 sized and shaped to be disposed between the first outer lip 334 of the first outer section 330 and the second inner lip 352 of the second outer section 350. In one example, the height of the one or more second spacers 385 can be less than the height of the first outer shoulder 333 plus the height of the second inner shoulder 351. In one example, the width of the one or more second spacers 385 can be less than the width of the lip 334 and less than the width of the second inner lip 352. The one or more second spacers 385 may be formed separately from the first outer section 330 and the second outer section 350 (as shown in FIG. 3), or the one or more second spacers 385 may be formed integrally with the first outer section 330 and / or the second outer section 350 (whereby the one or more second spacers 385 are one or more protrusions).

[0057]

[0075] The first and second spacers 380 , 385 facilitate reducing the contact area between the sections 310 , 330 , 350 of the plate assembly 300 and facilitate increasing the adjustability and control of the zone between the sections 310 , 330 , 350 .

[0058]

[0076] The one or more second spacers 385 may abut the first outer lip 334 and the second inner lip 352 (as shown in FIG. 3), or the one or more second spacers 385 may be fitted into the first outer lip 334 and / or the second inner lip 352.

[0059]

[0077] The present disclosure contemplates that one or more purge gases may be supplied to the upper section 131 while flowing the one or more process gases P1. The lips of the plate assembly 300 (such as lip 312, first inner lip 332, first outer lip 334, and second inner lip 352) facilitate reducing or eliminating leakage of gas between the upper section 131 and the processing space 128 through the plate assembly 300. For example, leakage of one or more purge gases (if used) from the upper section 131 into the processing space 128 and associated dilution of the one or more process gases P1 is reduced or eliminated.

[0060]

[0078] The first and second spacers 380, 385 can include a transparent material (such as clear quartz) and / or an opaque material. A transparent material transmits at least 80% (e.g., 95% or more) of light having wavelengths in the infrared region. In one or more embodiments, the first and second spacers 380, 385 are formed of a material different from the material of the sections 310, 350, 370. In one or more embodiments, the first and second spacers 380, 385 are formed of a transparent material.

[0061]

[0079] In one or more embodiments, the inner section 310 comprises a transparent material or an opaque material, and at least one of the one or more outer sections 330, 350, 370 comprises the other of a transparent material or an opaque material. The sensor(s) (such as sensors 191 and / or 192) may be aligned with the transparent material to view through the transparent material for measurements. In one or more embodiments, the inner section 310 is formed of a transparent material or an opaque material, and at least one of the one or more outer sections 330, 350, 370 is formed of the other of a transparent material or an opaque material.

[0062]

[0080] The first set 106a of upper heat sources 106 are aligned with the inner section 310 to facilitate heating and adjusting the temperature of one or more zones of the substrate(s) 107 aligned with the inner section 310. The second set 106b of upper heat sources 106 are aligned with the first outer section 330 to facilitate heating and adjusting the temperature of a second zone(s) of the substrate(s) 107 aligned with the first outer section 330. The third set 106c of upper heat sources 106 are aligned with the second outer section 350 to facilitate heating and adjusting the temperature of a third zone(s) of the substrate(s) 107 aligned with the second outer section 350. In one or more embodiments, the plate assembly 300 can be used to heat zones of the substrate(s) 107 using at least indirect radiation provided using the upper heat sources 106.

[0063]

[0081] The plate assembly 300 is configured in a stepped arrangement, whereby the upper outer surfaces of the inner section 310 and the outer sections 330, 350 have a radially upward step pointing inward toward the center of the plate assembly 300. The outer surface 315 of the inner section 310 is disposed above one or more arcuate outer surfaces 335, 355 of the first and second outer sections 330, 350 along the direction D1 from the substrate support assembly 119 toward the plate assembly 300. In one or more embodiments, the outer surface 315 is circular. This disclosure contemplates that the circular shape of the inner section 315 may include a perfect circle. This disclosure contemplates that the circular shape of the outer surface 315 may include one or more openings (e.g., notches) on the outer edge of the circular shape, whereby the outer edge is not a continuous circle. As an example, the circular shape of the outer surface 315 may include an irregular circle. In one or more embodiments, one or more surfaces of the heat-receiving sections 310, 330, 350 (exterior surface 315 and / or one or more arcuate exterior surfaces 335, 355) are textured (e.g., smoothed) and / or coated to increase the emissivity and / or absorptivity of the respective sections 310, 330, 350. In one or more embodiments, the one or more exterior surfaces are smoothed using polishing (e.g., using chemical polishing, mechanical polishing, and / or chemical-mechanical polishing). Abrasive materials can be used to smooth the one or more exterior surfaces. Other smoothing techniques may also be used. In one or more embodiments, the one or more exterior surfaces are smoothed, and then a coating is formed on the smoothed one or more exterior surfaces. In one or more embodiments, the exterior surface(s) of the coating is smoothed. In one or more embodiments, the smoothed one or more exterior surfaces have an average surface roughness (Ra) of less than 1.5, e.g., 1.0 or less (e.g., 0.75 or less). In one or more embodiments, each section 310, 330, 350 has an emissivity and / or absorptivity of radiant energy in the infrared wavelength range of 0.80 or greater, such as 0.90 or greater, for example, 0.95 or greater. In one or more embodiments, one or more of each section 310, 330, 350 is selectively smoothed and / or coated in one or more regions relative to one or more other regions that are not smoothed and / or coated.

[0064]

[0082] The coating is formed of a material different from the material of each of the sections 310, 330, 350. In one or more embodiments, each of the sections 310, 330, 350 includes graphite and the coating includes silicon carbide (SiC). In one or more embodiments, the coating includes quartz (opaque quartz (e.g., white quartz) and / or black quartz).

[0065]

[0083] During processing, the inner section 310 of the plate assembly 300 is positioned a distance DS1 from the top substrate 107. In one or more embodiments, the distance DS1 is in the range of 0.5 mm to 2.0 mm (such as 0.8 mm to 1.02 mm), for example, 1.0 mm.

[0066]

[0084] 5 is an enlarged view of one of the one or more first spacers 380 shown in FIGS. 3 and 4, according to one implementation. In one or more embodiments, the one or more first spacers 380 and / or the one or more second spacers 385 have a rectangular cross-section, such as a square cross-section (e.g., as shown in FIG. 5). In one or more embodiments, the one or more first spacers 380 and / or the one or more second spacers 385 include one or more outer surfaces 381, 382 that are planar (as shown in FIG. 5).

[0067]

[0085] Figure 6 is an enlarged view of one of the one or more first spacers 380 shown in Figures 3 and 4, according to one implementation. In one or more embodiments, the one or more first spacers 380 and / or the one or more second spacers 385 have a semi-ball-shaped cross-section, such as a hemispherical or semi-ovular cross-section (as shown in Figure 6). In one or more embodiments, the one or more first spacers 380 and / or the one or more second spacers 385 include one or more outer surfaces 381 that are planar and one or more outer surfaces 683 that are arcuate (as shown in Figure 6).

[0068]

[0086] 7 is an enlarged view of one of the one or more first spacers 380 shown in FIGS. 3 and 4, according to one embodiment. In one or more embodiments, the one or more first spacers 380 and / or the one or more second spacers 385 have a semi-trapezoidal cross-section (as shown in FIG. 7). In one or more embodiments, the one or more first spacers 380 and / or the one or more second spacers 385 include one or more planar outer surfaces 381, 382 and one or more tapered outer surfaces 783, 784 (as shown in FIG. 7).

[0069]

[0087] 3 and 4, according to one embodiment. In one or more embodiments, the one or more first spacers 380 and / or the one or more second spacers 385 have a ball-shaped cross-section, such as a spherical or oval cross-section (as shown in FIG. 8). In one or more embodiments, the one or more first spacers 380 and / or the one or more second spacers 385 include one or more outer surfaces 883 that are arc-shaped (as shown in FIG. 8).

[0070]

[0088] 9 is a schematic axonometric view of a spacer 980, according to one embodiment. The spacer 980 may be used as one or more of the first spacers 380 and / or one or more second spacers 385. The spacer 980 includes a pin.

[0071]

[0089] 10 is a schematic axonometric view of a spacer 1080, according to one embodiment. The spacer 1080 can be used as one or more of the first spacers 380 and / or one or more second spacers 385. The spacer 1080 includes a ring.

[0072]

[0090] 11 is a schematic axonometric view of a plurality of spacers 1180, according to one embodiment. The spacers 1180 may be used as one or more of the first spacers 380 and / or one or more second spacers 385. The spacers 1180 include ring segments.

[0073]

[0091] 12 is a schematic graph of heating profiles 1201, 1202, 1203 for various zones of the top substrate 107, according to one embodiment. The heating profiles 1201, 1202, 1203 are created using the plate assembly 300 shown in FIGS.

[0074]

[0092] A first zone profile 1201 shows the heating profile of a first zone of the top substrate 107 that is aligned below the inner section 310. A second zone profile 1202 shows the heating profile of a second zone of the top substrate 107 that is aligned below the first outer section 330. A third zone profile 1203 shows the heating profile of a third zone of the top substrate 107 that is aligned below the second outer section 350.

[0075]

[0093] As illustrated by profiles 1201, 1202, and 1203, heating of the substrate 107 across the diameter of the substrate 107 is more uniform (compared to other configurations) when using plate assembly 300. Additionally, the various heat sources aligned with sections 310, 330, and 350, respectively, can be adjusted to provide more uniform heating of the various zones for more uniform center-to-edge deposition thickness.

[0076]

[0094] FIG. 13 is a partial schematic axonometric top view of the plate assembly 300 shown in FIGS. 3 and 4, according to one embodiment.

[0077]

[0095] Each of inner section 310, first outer section 330, and second outer section 350 includes a first portion 1301 formed of an opaque material and a second portion 1302 formed of a transparent material. Second portion 1302 extends radially outward relative to the center of the respective inner section 310, first outer section 330, or second outer section 350. Sensor(s) (such as sensors 191 and / or 192) may be aligned with the transparent material of second portion 1302 to see through the transparent material for measurements.

[0078]

[0096] Figure 14 is a partial schematic axonometric bottom view of the plate assembly 300 shown in Figure 13, according to one embodiment. In Figure 14, one or more first spacers 380 and one or more second spacers 385 include multiple pins of the spacer 980 shown in Figure 9. In one or more embodiments, the one or more first spacers 380 include three or four spacers (four is shown in Figure 14), and the one or more second spacers 385 include three or four spacers (four is shown in Figure 14). Other numbers of spacers are also contemplated.

[0079]

[0097] Figure 15 is a partial schematic axonometric bottom view of the plate assembly 300 shown in Figure 13, according to one embodiment. In Figure 15, the one or more first spacers 380 and the one or more second spacers 385 comprise the ring of spacers 1080 shown in Figure 10.

[0080]

[0098] Figure 16 is a schematic cross-sectional side view of a plate assembly 1600, according to one embodiment. The chamber 1600 is similar to the plate assembly 300 shown in Figures 3 and 4, including one or more features, aspects, components, operations, and / or characteristics thereof. The plate assembly 1600 may be used in place of the plate assembly 300 shown in Figures 1 and 2.

[0081]

[0099] The plate assembly 1600 is configured in a flat arrangement such that the upper outer surfaces of the inner section 310 and the outer sections 330, 350 are aligned with one another in a radial direction pointing inward toward the center of the plate assembly 1600. The outer surface 315 of the inner section 310 is aligned with one or more arcuate outer surfaces 335, 355 of the first and second outer sections 330, 350 along direction D1 from the substrate support assembly 119 toward the plate assembly 1600. In the plate assembly 1600, the height(s) of the one or more spacers 380, the one or more second spacers 385, the lip 312, the first inner lip 332, the first outer lip 334, and / or the second inner lip 352 may be reduced compared to the height(s) shown in FIG.

[0082]

[0100] FIG. 17 is a schematic block diagram of a method 1700 of processing a substrate for semiconductor manufacturing, according to one embodiment.

[0083]

[0101] Step 1702 of the method 700 includes placing one or more substrates within the processing space of the chamber.

[0084]

[0102] Step 1704 includes heating one or more substrates. It is contemplated that step 1704 may occur before, after, and / or simultaneously with step 1706.

[0085]

[0103] Step 1706 includes flowing one or more process gases into the processing space.

[0086]

[0104] Step 1710 includes simultaneously depositing one or more layers onto each of one or more substrates.

[0087]

[0105] Step 1712 includes evacuating the one or more process gases from the processing space. During the flowing of step 1706 and / or the evacuating of step 1712, the one or more process gases may follow a flow path described herein (such as the flow paths described in connection with FIGS. 1 and 2).

[0088]

[0106] 18 is a schematic cross-sectional side view of a plate assembly 1800, according to one embodiment. Chamber 1800 is similar to plate assembly 300 shown in FIGS. 3 and 4, including one or more features, aspects, components, operations, and / or characteristics thereof. Plate assembly 1800 may be used in place of plate assembly 300 shown in FIGS. 1 and 2.

[0089]

[0107] The inner section 310 includes one or more arcuate outer surfaces 611. The first and second outer sections 330, 350 each include one or more arcuate outer surfaces 631, 651. The arcuate outer surfaces 611, 631, 651 are concave and face the top substrate 107. In one or more embodiments, the arcuate outer surfaces 611, 631, 651 are defined by grooves having arcuate cross-sections formed in the respective inner and outer sections 310, 330, 350. The arcuate outer surfaces of the first and second outer sections 330, 350 are formed circumferentially (e.g., in the shape of a ring) around the one or more arcuate outer surfaces 611 of the inner section 310. In one or more embodiments, the one or more arcuate outer surfaces 611 of the inner section 310 are in the shape of a circle.

[0090]

[0108] 19 is a schematic graph of heating profiles 1901, 1902a, 1902b, 1903a, 1903b for various zones of the top substrate 107, according to one embodiment. The heating profiles 1901, 1902a, 1902b, 1903a, 1903b are created using the plate assembly 1800 shown in FIG.

[0091]

[0109] A first zone profile 1901 shows the heating profile of a first zone of the top substrate 107 that is aligned below the inner section 310. Second zone profiles 1902a, 1902b show the heating profile of a second zone of the top substrate 107 that is aligned below the first outer section 330. Third zone profiles 1903a, 1903b show the heating profile of a third zone of the top substrate 107 that is aligned below the second outer section 350.

[0092]

[0110] As illustrated by profiles 1901, 1902a, 1902b, 1903a, and 1903b, heating of the substrate 107 across the diameter of the substrate 107 is more uniform (compared to other configurations) when using plate assembly 1800. Additionally, the various heat sources aligned with sections 310, 330, and 350, respectively, can be adjusted to provide more uniform heating of the various zones for more uniform center-to-edge deposition thickness.

[0093]

[0111] Advantages of the present disclosure include ease of cleaning (e.g., cleaning using relatively high temperatures while reducing or eliminating etching of the plate assembly), reduced contamination of the plate assembly 300, 1600, 1800, reduced diffusion flow away from the substrate(s) being processed, thermal control and adjustability of multiple zones, and rapid and efficient heating of the zones (e.g., rapid radiation absorption and diffusion). As an example, a plate assembly that may be described herein facilitates thermal control and adjustability for multiple zones while promoting reduced diffusion flow. For example, the plate assemblies described herein facilitate thermal control and adjustability for two or more zones (e.g., four to eight or more). Advantages also include improved deposition uniformity, improved film thickness, and improved device performance.

[0094]

[0112] Such advantages may be enhanced when processing a single substrate at a time and / or when batch processing multiple substrates simultaneously.

[0095]

[0113] It is contemplated that one or more aspects disclosed herein may be combined. As an example, one or more aspects, features, components, operations, and / or properties of various embodiments of processing device 100, controller 1070, upper liner 181, plate assembly 300, the spacer embodiments shown in FIGS. 5-8, the pins of spacer 980, the rings of spacer 1080, the ring segments of spacer 1180, the plate assembly 300 embodiments shown in FIGS. 13 and 14, the plate assembly 300 embodiment shown in FIG. 15, plate assembly 1600, plate assembly 1800, and / or method 1700 may be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the advantages described above.

[0096]

[0114] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, which scope is defined by the following claims.

Claims

1. A plate assembly disposed within a processing chamber, comprising: an inner section comprising an opaque material, the inner section having an outer diameter; and a first outer section having an arcuate shape and including an opaque material, the first outer section comprising: a first inner shoulder; and The plate assembly includes a first inner lip extending inwardly relative to the first inner shoulder.

2. The plate assembly of claim 1 , further comprising one or more spacers sized and shaped to be disposed between the inner section and the first inner lip of the first outer section.

3. The plate assembly of claim 2 , wherein the one or more spacers comprise a plurality of pins comprising a transparent material.

4. The plate assembly of claim 2 , wherein the one or more spacers comprise one or more rings comprising a transparent material.

5. The plate assembly of claim 2 , wherein the one or more spacers include one or more tapered or arcuate outer surfaces.

6. The first outer section comprises: a first outer shoulder; and The plate assembly of claim 1 further comprising a first outer lip extending outwardly relative to the first outer shoulder.

7. The plate assembly of claim 6 , wherein the inner section includes a disk body and the first outer section includes a first ring body.

8. and a second outer section having an arcuate shape, the second outer section comprising: a second inner shoulder; and The plate assembly of claim 7 including a second inner lip extending inwardly relative to the second inner shoulder.

9. one or more first spacers sized and shaped to be disposed between the inner section and the first inner lip of the first outer section; and 9. The plate assembly of claim 8, further comprising one or more second spacers sized and shaped to be disposed between the first outer lip of the first outer section and the second inner lip of the second outer section.

10. The plate assembly of claim 8 , wherein the second outer section includes a second ring body.

11. The plate assembly of claim 8 , wherein the first inner shoulder has a first shoulder diameter that is equal to or greater than the outer diameter of the inner section.

12. 12. The plate assembly of claim 11, wherein the first outer shoulder has a second shoulder diameter greater than the first shoulder diameter, and the second inner shoulder has a third shoulder diameter greater than or equal to the second shoulder diameter.

13. The second outer section comprises: a second outer shoulder; and The plate assembly of claim 8 further comprising a second outer lip extending outwardly relative to the second outer shoulder.

14. and a third outer section having an arcuate shape, the third outer section comprising: a third inner shoulder; and The plate assembly of claim 13 including a third inner lip extending inwardly relative to the third inner shoulder.

15. Each of the inner section and the first outer section comprises: a first portion formed of the opaque material; and The plate assembly of claim 1 , further comprising a second portion formed of a transparent material, the second portion extending radially outward relative to a center of the respective inner section or first outer section.

16. A process kit for placement within a processing chamber, comprising: a liner including an inner surface, the inner surface having an inner liner diameter; and a plate assembly, the plate assembly comprising: an inner section having an outer diameter smaller than the inner liner diameter; and A process kit comprising one or more arc-shaped outer sections, with the one or more outer sections having an outermost section sized and shaped to cooperate with the liner.

17. 17. The process kit of claim 16, wherein the inner section comprises a transparent material or an opaque material, and at least one of the one or more outer sections comprises the other of the transparent material or the opaque material.

18. 17. The process kit of claim 16, wherein the inner section is formed of a transparent material or an opaque material, and at least one of the one or more outer sections is formed of the other of the transparent material or the opaque material.

19. 1. A processing chamber applicable for use in semiconductor manufacturing, comprising: A chamber body, Interior space, a plurality of gas injection passages formed in the chamber body; and a chamber body including one or more gas exhaust passages formed within the chamber body; one or more heat sources configured to generate heat; a liner disposed within the interior space and along at least a portion of one or more sidewalls of the chamber body, the liner including an interior surface; a plate assembly disposed within the interior space and at least partially defining a processing space of the interior space, an inner section comprising an opaque material; and a plate assembly having one or more outer sections that are arc-shaped and comprise the opaque material, the one or more outer sections having an outermost section that connects with the liner; and a substrate support assembly disposed within the processing space, a plurality of lift pins; and A processing chamber comprising a substrate support assembly comprising one or more substrate supports.

20. 20. The processing chamber of claim 19, wherein an outer surface of the inner section is disposed above one or more arcuate outer surfaces of the one or more outer sections along a direction from the substrate support assembly toward the plate assembly.

Citation Information

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