Laser beam shaping and patterning for manufacturing

Abstract

The laser manufacturing system includes a laser patterning unit with an optically addressed light valve and an image relay capable of directing a patterned laser beam from the laser patterning unit to a part. In some embodiments, the patterned laser beam is capable of ablatively removing material from the part or causing a selected chemical reaction or change in the part material.

Description

[Technical Field]

[0001] [Related Applications] This disclosure is part of a non-provisional patent application claiming the benefit of priority to U.S. Application No. 63 / 419,875, filed October 27, 2022, which is incorporated herein by reference in its entirety.

[0002] [Technical field] The present disclosure relates generally to systems and methods for high-power laser processing of materials. In one embodiment, manufacturing is supported by a two-dimensional laser patterning unit with optically addressed light valves capable of providing a two-dimensional patterned laser beam capable of ablatively removing material from a part or selectively inducing patterned chemical reactions in the part material. [Background technology]

[0003] Microelectronics is a key component in the automotive, industrial, medical, communications, storage, and consumer electronics industries. Microelectronics manufacturing typically requires precise spatial control to fabricate semiconductor, insulator, and conductor materials that can be integrated with microelectronic components such as miniature transistors, capacitors, inductors, resistors, diodes, insulators, and conductors.

[0004] Traditional methods for providing integrated assemblies rely on lithography, which uses expensive photomasks to pattern exposures with resist to fabricate and connect complex patterns on a work surface consisting of epitaxially grown multi-layer structures, such as semiconductor pn junction diodes. Etching and physical vapor deposition processes complement these processes, for example, to discretize microelectronic components at the surface of a wafer and provide electrification paths.

[0005] Processes and equipment that can integrate or replace multiple patterning, bonding, or material processing steps using systems that shape patterned laser beams in a controlled environment are needed to reduce costs and increase manufacturing throughput. Summary of the Invention

[0006] In some embodiments, a laser manufacturing system can include a laser patterning unit with an optically addressed light valve, and an image relay can be positioned to direct a patterned laser beam from the laser patterning unit to a part to ablatively remove material from the part during operation with the patterned laser beam.

[0007] In some embodiments, the part has multiple layers of material, and selected layers are removable.

[0008] In some embodiments, the patterned laser beam can also induce selected chemical reactions in the component material.

[0009] In some embodiments, the patterned laser beam can further laser peen the part material.

[0010] In some embodiments, the laser patterning unit provides one-dimensional patterning.

[0011] In some embodiments, the laser patterning unit provides two-dimensional patterning.

[0012] In another embodiment, the laser manufacturing system includes a laser patterning unit with an optically addressed light valve, and an image relay positioned to direct a patterned laser beam from the laser patterning unit to the part, the patterned laser beam arranged to cause a selected chemical reaction or transformation in the part material.

[0013] In some embodiments, the patterned laser beam can also ablatively remove material from the part.

[0014] In another embodiment, a laser manufacturing method includes providing a laser patterning unit having an optically addressed light valve, wherein a patterned laser beam from the laser patterning unit is directed toward the part using an image relay, and the patterned laser beam operates to at least one of cause a selected chemical reaction and ablatively remove material from the part using the patterned laser beam. [Brief explanation of the drawings]

[0015] Non-limiting, non-exclusive embodiments of the present disclosure are described with reference to the following figures, in which like reference numerals refer to like elements throughout the various figures unless otherwise specified. [Figure 1] 1 illustrates an embodiment of a system with a laser-based shaped beam for ablation and reaction area control on a work surface. [Figure 2A] 1 illustrates a programmable mask and laser-based shaped beam ablation system. [Figure 2B] 1 illustrates a programmable mask and laser-based shaped beam system that allows spatial control of a reaction, chemistry, or other process on a work surface. [Figure 3] 1 illustrates another embodiment of a laser processing system capable of directing a one- or two-dimensional light beam toward a part. [Figure 4] 1 illustrates a method of operating a laser manufacturing system capable of providing a one-dimensional or two-dimensional light beam. [Figure 5] 1 illustrates a laser manufacturing system including a switchyard system that allows for patterned two-dimensional energy reuse. DETAILED DESCRIPTION OF THE INVENTION

[0016] In the following description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown and described specific exemplary embodiments in which the present disclosure may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the concepts disclosed herein, and it will be understood that modifications may be made to the various disclosed embodiments and other embodiments may be utilized without departing from the scope of the present disclosure. The following detailed description, therefore, is not to be taken in a limiting sense.

[0017] Laser manufacturing systems suitable for microelectronics manufacturing, precision machine tool manufacturing, or materials processing must be able to efficiently process a wide range of materials with high throughput. For example, systems capable of providing arbitrarily shaped laser energy or other forms of directed energy can be utilized to cause spatially controlled, localized material changes within the shape of the energy signature delivered to the work surface. In some embodiments, patterning can be achieved by moving a laser beam over a surface. Patterning can be provided through the use of optically addressable light valves that allow dynamic, programmable laser beam shaping. In some embodiments, laser peening, ablation, or cutting can be performed using subtractive manufacturing techniques. Laser processing can be used to induce changes in crystalline structure, affect stress patterns, or otherwise effect chemical or physical modifications to create structures with desired properties.

[0018] In other embodiments useful in the fabrication of microelectronic products, such laser fabrication systems may enable the use of localized ablation, where a native layer of insulation is removed to expose the underlying conductive substrate in order to provide direct access to electrical contacts. In other applications (typically those requiring ablation or less), laser beam energy may induce chemical reactions that can alter the material at the work surface by using reactive species in the surrounding medium to form new compound materials. As a result of these reactions, electronic properties can be locally defined or patterned on the surface of the work piece to produce interconnected, functional microelectronic devices. The etching and surface material alteration steps may be contained in a single laser processing system in interchangeable reactive or inert media.

[0019] In some embodiments, the patterned laser beam can be shaped to provide patterned heating of a component or work piece, and in some embodiments, reactively or thermally controlled surfaces or interfaces can be used for subtractive (e.g., ablation) or additive (adding complex constituents from the surrounding environment (e.g., metal oxides (MOs)). x Electrical properties can be affected by thermally activated oxidation (oxygen from air) of materials such as metals (M) to form semiconductors or insulators. Composite surface materials can also be fabricated from single materials that react by causing the formation of thermally activated oxides (oxygen), nitrates (nitrogen), carbides (carbon), or other components to form compounds provided by the surrounding gas atmosphere, gas-transparent liquid, or transparent solid near the surface or interface being treated. Alternatively or additionally, control of insulating, metallic, or semiconducting surface properties can be achieved by ablating the native (or grown) insulating layer (e.g., metal oxide) to expose the underlying conductive metal using patterned laser energy exposure and absorption.

[0020] In some embodiments, exposure to a uniformly shaped beam intensity allows for a uniform interface temperature that supports uniform control of the interface reaction process and the formation of a uniform layer (e.g., as opposed to a typical Gaussian beam, which has non-uniform intensity and heating, resulting in a non-uniform reaction field and a non-uniform material layer with non-uniform electrical properties and composition).

[0021] FIG. 1 illustrates an embodiment of a system 100 using a laser-based shaped beam and programmable mask for ablation and reaction area control on a work surface. The system may include a processing laser readout beam 102 at a first wavelength. The beam may pass through a homogenizer (not shown) to convert the Gaussian-shaped beam into a uniformly dispersed laser readout beam 103 at the first wavelength. System 100 also supports a sample write beam 104 with arbitrary patterning (e.g., an X-shape in FIG. 1 ) at a second wavelength. Each of the homogenized processing laser readout beam 103 and the write beam 104 may be directed toward a dichroic beam combiner 105. The dichroic beam combiner 105 selectively reflects one of the first or second wavelengths and transmits the other of the first or second wavelengths to combine the homogenized processing laser readout beam 103 and the write beam 104 to generate a combined read / write beam 106. The combined read / write beam 106 passes through an optically addressable light valve (OALV) 107. The OALV 107 can be a transmissive or reflective pixel-addressable light valve. In one embodiment, the pixel-addressable light valve includes both a liquid crystal module with polarizing elements and an optical projection unit that provides a two-dimensional input pattern, allowing the beam to be separated by splitting the light source into a negative patterned image and a positive patterned image. The combined read / write beam 106 passes through the OALV 107, which then spatially imprints the pattern into the polarization space of the drive beam. The desired polarization state of the light is allowed to continue through the rest of the optical system, while the undesired state is discarded and discarded in a beam dump or other energy disposal device. The patterned portion of the beam is transmitted as a transmitted processing laser beam 108. The transmitted processing laser beam 108 may include an image 109 provided by the OALV 107. The processing laser beam 108 may pass through a series of image relay optics 110 before the output processing laser beam 111 reaches a positioning mirror 112. Output beam 113 from positioning mirror 112 passes through imaging lens 114. The optical system may be movable, for example, in the X and Y directions as indicated by arrow 115.In one embodiment, final imaging beam 116 may be directed to intersect work surface 118 (which may be a structure or other material) at location 117 to subtractively process, cause a chemical reaction, or ablate portions of the surface material (e.g., remove oxide and create exposed conductive pathways). In one embodiment, for example, substrate material may be ablated to remove aluminum oxide, leaving conductive areas of aluminum. In an exemplary implementation, imaging beam 116 may be an ultrashort pulsed beam (e.g., picosecond). In this example, a thin layer of oxide may be removed without damaging the underlying substrate.

[0022] FIG. 2A illustrates a programmable mask laser-based shaped beam ablation system 200A that enables processing of a work surface that can be located in any chamber or surrounding control volume 210A. In one example, the ablation process can be performed using the system described in FIG. 1. In one embodiment, a shaped processing laser beam 202A (corresponding to imaging beam 116 in FIG. 1) is patterned using a programmable mask (corresponding to OALV 107 in FIG. 1). Processing laser beam 202A can be patterned with a rectangular pattern 203A, resulting in an ablation pattern 204A having a rectangular shape. In a second example, processing laser beam 205A can be patterned with a circular pattern 206A, resulting in an ablation pattern 207A having a circular shape. The pattern can be generated in an insulating layer 208A, which can be, for example, a metal oxide, located on substrate 209A. A desired ablation technique can be used to create accessible conductive contact points on the semiconductor wafer. While ablation pattern 204A having a rectangular shape and ablation pattern 207A having a circular shape are illustrated, it should be understood that these are merely examples and that any pattern that can be produced with a programmable mask such as that described with respect to OALV 107 in Figure 1 can be ablated. While the structure shown in Figure 2A is a flat surface, it should be understood that ablation patterns can also be implemented in three-dimensional structures, including those with holes, cavities, or channels, edges, curved or irregular surfaces, protrusions, or projections.

[0023] FIG. 2B illustrates a programmable mask laser-based shaped beam system 200B that enables spatial control of chemical or other processes on a work surface, which can be located in any chamber or surrounding control volume 210B. In one embodiment, controlling a reactive process can use a system such as that described in FIG. 1. In a first example, a shaped processing laser beam 202B (corresponding to imaging beam 116 in FIG. 1) is patterned using a programmable mask (corresponding to OALV 107 in FIG. 1). Processing laser beam 202B can be patterned with a rectangular pattern 203B, resulting in a rectangular-shaped area with controlled material properties 204B. In a second example, processing laser beam 205B can be patterned with a circular pattern 206B, resulting in a circular-shaped area with controlled material properties 207B. The pattern can be generated in an insulating layer 208B, such as a metal oxide on a substrate 209B. In some embodiments, areas with controlled material properties can be created by heating the area to a temperature below that required for ablation in an ambient or controlled environment. For example, heating a layer of copper metal in air can form an insulating layer of copper oxide. Depending on the heating or atmosphere (e.g., different gases, vacuums, liquids), different oxidation levels can be achieved (e.g., CuO or CuO2). By using a variety of different atmospheres and laser parameters, material properties can be controlled to create insulators, conductors, or, by introducing dopants, semiconductors. In some embodiments, complex three-dimensional structures can be obtained with different material properties in different areas.

[0024] FIG. 3 illustrates an embodiment of a laser processing system 300. As seen in FIG. 3, the laser source and amplifier 312 can be fabricated as a continuous or pulsed laser. In other embodiments, the laser source includes a pulsed electrical signal source, such as an arbitrary waveform generator or equivalent, that operates on a continuous laser source, such as a laser diode. In some embodiments, this can also be achieved via a fiber laser source or a fiber launched laser source that is subsequently modulated by an acousto-optic or electro-optic modulator. In some embodiments, a high repetition rate pulse source using a Pockels cell can be used to create pulse trains of any length.

[0025] Possible laser types include, but are not limited to, gas lasers, chemical lasers, dye lasers, metal vapor lasers, solid-state lasers (e.g., fiber), semiconductor (e.g., diode) lasers, free electron lasers, gas dynamic lasers, "nickel-like" samarium lasers, Raman lasers, or nuclear-pumped lasers.

[0026] Gas lasers may include lasers such as helium-neon lasers, argon lasers, krypton lasers, xenon ion lasers, nitrogen lasers, carbon dioxide lasers, carbon monoxide lasers, or excimer lasers.

[0027] Chemical lasers may include lasers such as hydrogen fluoride lasers, deuterium fluoride lasers, COIL (chemical oxygen iodine lasers), or Agil (all vapor phase iodine lasers).

[0028] Metal vapor lasers can include lasers such as helium-cadmium (HeCd) metal vapor lasers, helium-mercury (HeHg) metal vapor lasers, helium-selenium (HeSe) metal vapor lasers, helium-silver (HeAg) metal vapor lasers, strontium vapor lasers, neon-copper (NeCu) metal vapor lasers, copper vapor lasers, gold vapor lasers, manganese (Mn / MnCl) vapor lasers, etc. Rubidium or other alkali metal vapor lasers can also be used. Solid-state lasers include ruby ​​lasers, Nd:YAG lasers, NdCrYAG lasers, Er:YAG lasers, neodymium YLF (Nd:YLF) solid-state lasers, neodymium-doped yttrium orthovanadate (Nd:YVO4) lasers, neodymium-doped yttrium calcium oxoborate Nd:YCa4O(BO3)3 or simply Nd:YCOB, neodymium-glass (Nd:glass) lasers, titanium sapphire (Ti:sapphire) lasers, thulium YAG (Tm:YAG) lasers, yttrium YAG (Yb:YAG) lasers, yttrium:2O3 (glass or ceramic) lasers, yttrium-doped glass lasers (rod, plate / The lasers may include lasers such as fluorine-doped uranium (Ce:YAG) lasers, chromium ZnSe (Cr:ZnSe) lasers, cerium-doped lithium strontium (or calcium) aluminum fluoride (Ce:LiSAF, Ce:LiCAF), promethium-147 doped phosphate glass (147Pm+3:glass) solid-state lasers, chromium-doped chrysoberyl (alexandrite) lasers, erbium-doped erbium-yttrium co-doped glass lasers, trivalent uranium-doped calcium fluoride (U:CaF2) solid-state lasers, divalent samarium-doped calcium fluoride (Sm:CaF2) lasers, or F-center lasers.

[0029] The semiconductor laser may include laser media such as GaN, InGaN, AlGaInP, AlGaAs, InGaAsP, GaInP, InGaAs, InGaAsO, GaInAsSb, lead salt, vertical cavity surface emitting laser (VCSEL), quantum cascade laser, hybrid silicon laser, or combinations thereof.

[0030] As shown in FIG. 3 , a laser manufacturing system 300 suitable for embodiments such as those described in connection with FIGS. 1 , 2A, and 2B uses a laser capable of providing one- or two-dimensional directed energy as part of an energy patterning system 310. In some embodiments, one-dimensional patterning can be directed as straight or curved strips, as rastered lines, as spiral lines, or in other suitable configurations. Two-dimensional patterning can include separated or overlapping tiles or images with varying laser intensity. Two-dimensional image patterns with non-rectangular boundaries can be used, overlapping or interpenetrating images can be used, and images can be provided by two or more energy patterning systems. The energy patterning system 310 uses a laser source and amplifier 312 to direct one or more continuous or intermittent energy beams to beam shaping optics 314. After shaping, if necessary, the beam is patterned by energy patterning unit 316, typically with some energy directed to waste energy processing unit 318. The patterned energy is relayed by image relay 320 to article processing unit 340, in one embodiment as a two-dimensional image 322 focused on part 346. The patterned energy directed by image relay 320 may melt, melt, sinter, fuse, change to a crystalline structure, affect stress patterns, or otherwise chemically or physically modify part 346 to form a structure with desired properties. Control processor 350 may be connected to various sensors, actuators, heating or cooling systems, monitors, and controllers to coordinate the operation of laser source and amplifier 312, beam shaping optics 314, laser patterning unit 316, and image relay 320, as well as any other components of system 300. As will be appreciated, the connection may be wired or wireless, may be continuous or intermittent, and may have feedback capabilities (e.g., thermal heating may be adjusted in response to sensed temperature).

[0031] In some embodiments, the beam shaping optics 314 may include a variety of imaging optics to combine, focus, diverge, reflect, refract, homogenize, intensity adjust, frequency adjust, or otherwise shape one or more laser beams received from the laser source and amplifier 312 and direct them toward the laser patterning unit 316. In one embodiment, multiple light beams, each having a different wavelength of light, may be combined using wavelength-selective mirrors (e.g., dichroic) or diffractive elements. In other embodiments, multiple beams may be homogenized or combined using polygonal mirrors, microlenses, and refractive or diffractive optical elements.

[0032] The laser patterning unit 316 may include static or dynamic energy patterning elements. For example, a laser beam may be interrupted by a mask with fixed or movable elements. Pixel-addressable masking, image generation, or transmission may be used for greater flexibility and ease of image patterning. In some embodiments, the laser patterning unit includes addressable light valves alone or in combination with other patterning mechanisms to provide patterning. Light valves may be transmissive, reflective, or may use a combination of transmissive and reflective elements. Patterns may be dynamically changed using electrical or optical addressing. In one embodiment, a transmissive optically addressed light valve acts to rotate the polarization of light passing through the valve, with optically addressed pixels forming a pattern defined by an optical projection source. In other embodiments, a reflective optically addressed light valve includes a write beam to modify the polarization of a read beam. In some embodiments, non-optically addressed light valves may be used. These may include, but are not limited to, electrically addressable pixel elements, movable mirror or micromirror systems, piezoelectric or micro-actuated optical systems, fixed or movable masks or shielding plates, or other conventional systems capable of providing high intensity patterning.

[0033] The waste energy processing unit 318 can be used to dissipate, redirect, and utilize energy that was not patterned and passed through the image relay 320. In one embodiment, the waste energy processing unit 318 can include passive or active cooling elements to remove heat from both the laser source and amplifier 312 and the laser patterning unit 316. In other embodiments, the waste energy processing unit can include a "beam dump" to absorb and convert to heat any beam energy not used to define the laser pattern. In yet other embodiments, the discarded laser beam can be recycled using beam shaping optics 314. Alternatively or additionally, the discarded beam energy can be directed to an article processing unit 340 for heating or further patterning. In some embodiments, the discarded beam energy can be directed to an additional energy patterning system or article processing unit.

[0034] In one embodiment, a "switchyard" type optical system may be used. The switchyard system is suitable for reducing light wasted in laser manufacturing systems due to unwanted light from the pattern to be printed. The switchyard involves redirecting a complex pattern from its generation (in this case, a plane where a spatial pattern is imparted to a structured or unstructured beam) to its transmission through a series of switch points. Each switch point may optionally modify the spatial profile of the incident beam. The switchyard optical system may be utilized, for example, but not limited to, in laser-based laser manufacturing techniques where a mask is applied to the light. Advantageously, in various embodiments of the present disclosure, wasted energy may be recycled, either in a homogenized form used to maintain high power efficiency or high throughput, or as patterned light. Furthermore, wasted energy may be recycled and reused to increase intensity for printing more challenging materials.

[0035] Image relay 320 may receive the patterned image (whether one-dimensional or two-dimensional) from laser patterning unit 316 directly or through a switchyard and direct it toward article processing unit 340. In a manner similar to beam shaping optics 314, image relay 320 may include optics to combine, focus, split, reflect, refract, adjust intensity, adjust frequency, or otherwise shape and direct the patterned light. The patterned light may be directed using moveable mirrors, prisms, diffractive optical elements, or solid-state optical systems that do not require substantial physical movement. One of the lens assemblies may be configured to provide incident light having the magnification at both the first set of optical lenses and the second set of optical lenses, and at the second set of optical lenses that are interchangeable from the lens assemblies. Rotation of a set of one or more mirrors mounted on a compensating gantry and a final mirror mounted on the build platform gantry can be used to direct the light from the leading mirror to the desired location. Translational movement of the compensating gantry and the build platform gantry can also ensure that the distance of the incident light from the leading mirror to the article handling unit 340 is substantially equal to the image distance. In practice, this allows for rapid change of the optical beam transmission size and intensity across the build zone location for different powder materials while ensuring high system availability.

[0036] In addition to the material processing components, the article processing unit 340 may include components for holding and supporting three-dimensional structures, mechanisms for heating or cooling the chamber, auxiliary or supporting optics, and sensors or control mechanisms for monitoring or adjusting material or environmental conditions. The article processing unit 340 may support a vacuum or gas atmosphere in whole or in part to mitigate the risk of fire or explosion (especially with highly reactive metals) and to reduce unwanted chemical interactions. In some embodiments, the article processing unit may support a vacuum or gas atmosphere containing Ar, He, Ne, Kr, Xe, CO, N, O, SF, CH, CO, N, O, C, H, C, H, C, H, C, H, C, H, C, H, C, H, C, H, i-C, H, 10 , C4H 10 , 1-C4H8, cic-2, C4H7, 1,3-C4H6, 1,2-C4H6, C5H 12 , n-CH 12 , i-C5H 12 , n-CH 14 , C2H3Cl, C7H 16 , C8H 18 , C 10 H 22 , C 11 H 24 , C 12 H 26 , C 13 H 28 , C 14 H 30 , C 15 H 32 , C 16 H 34 , C6H6, C6H5-CH3, C8H 10Various pure or mixtures of other atmospheres may be used, such as atmospheres containing iCHOH, CHOH, or iCH. In some embodiments, refrigerants or large, inert molecules (including, but not limited to, sulfur hexafluoride) may be used. In some embodiments, pure or diluted atomic or molecular precursor atmospheres may be included to be mixed into the material being processed by the beam. An enclosure atmospheric composition that will have at least about 1% by volume (or number density) helium and inert / non-reactive gases may be used.

[0037] The control processor 350 may be connected to control any component of the laser manufacturing system 300 described herein, including the laser device, laser amplifiers, optics, thermal control, build chamber, and manipulator device. The control processor 350 may be connected to coordinate operation with various sensors, actuators, heating or cooling systems, monitors, and controllers. A wide range of sensors may be used to provide information for control or monitoring, including imagers, light intensity monitors, heat, pressure, or gas sensors. The control processor may be a single central controller, or alternatively, may include one or more independent control systems. The control processor 350 is provided with an interface through which manufacturing instructions can be entered. The use of a wide range of sensors enables various feedback control mechanisms that improve quality, manufacturing throughput, and energy efficiency.

[0038] One embodiment of the operation of a manufacturing system suitable for material processing or subtractive manufacturing is illustrated in FIG. 4. In this embodiment, a flowchart 400 illustrates one embodiment of a manufacturing process supported by desired optical and mechanical components. In step 402, a tool, workpiece, or material requiring processing is positioned on a cartridge, floor, chamber, or other suitable support. In some embodiments, a manipulator device such as a crane, lifting gantry, robotic arm, or similar object capable of manipulating parts that are difficult or impossible to move manually may be used. The manipulator device grasps various permanent or temporary manipulation points on the part so that it can be repositioned or manipulated. In some embodiments, the material may be a metal part or other material that can benefit from laser peening, ablation, or removal using subtractive manufacturing techniques. Laser processing may be used to induce changes in crystal structure, affect stress patterns, or otherwise chemically or physically altered to form structures with desired properties.

[0039] In step 404, unpatterned laser energy is emitted by one or more energy emitters, including, but not limited to, solid-state or semiconductor laser devices, and then amplified by one or more laser amplifiers. In step 406, the unpatterned laser energy is shaped and modified (e.g., intensity modified or focused). In step 408, this unpatterned laser energy is patterned (this may include conversion to waste heat, recycling as patterned or unpatterned energy, or waste heat generated by cooling the laser amplifiers in step 404) without being part of the pattern processed in step 410. In step 412, the patterned energy, now forming a one- or two-dimensional image, is relayed toward the material. In step 414, the image is applied to the material. These steps may be repeated until the image (or a different subsequent image) has been applied to all desired areas of the material (loop 418).

[0040] 5 illustrates one embodiment of a laser manufacturing system including a phase-change light valve and switchyard system that enables two-dimensional patterned energy recycling. Laser manufacturing system 520 has an energy patterning system with a laser and amplifier source 512 that directs one or more continuous or intermittent laser beams to beam shaping optics 514. Excess heat can be transferred into a waste energy processing unit 522, which may include a variable light valve cooling system. After shaping, the beam is typically patterned in two dimensions by an energy patterning unit 530, with some energy directed to the waste energy processing unit 522. The patterned energy is relayed by one of multiple image relays 532 to one or more article processing units 534A, 534B, 534C, or 534D, typically as a two-dimensional image focused on a part, structure, or material. The patterned laser beam directed by image relay 532 may melt, melt, sinter, fuse, change crystalline structure, affect stress patterns, or otherwise chemically or physically modify materials to form structures with desired properties. As with the embodiment of Figure 3, control processor 550 may be connected to various sensors, actuators, heating or cooling systems, monitors, and controllers to coordinate the operation of the various components of laser manufacturing system 520.

[0041] In this embodiment, the waste energy processing unit has multiple components to enable reuse of the discarded patterned energy. Coolant from laser amplifier and source 512 can be directed to one or more of generator 524, heating / cooling thermal management system 525, or energy dump 526. Additionally, repeaters 528A, 528B, and 528C can each transfer energy to generator 524, heating / cooling thermal management system 525, or energy dump 526. Optionally, repeater 528C can direct the patterned energy to image repeater 532 for further processing. In other embodiments, the patterned energy can be directed by repeaters 528C, 528B, and 528A for insertion into the laser beam provided by laser and amplifier source 512. Reuse of the patterned image is also possible using image repeater 532. The image may be redirected, inverted, reflected, sub-patterned, or otherwise transformed for distribution to the article processing units 534A-D. Advantageously, recycling of patterned light may improve the energy efficiency of the laser manufacturing process, and in some cases may improve the energy intensity directed at the floor or reduce manufacturing time.

[0042] Many modifications and other embodiments of the invention will suggest themselves to those skilled in the art having the benefit of the teachings presented in the foregoing description and the associated drawings. It is understood, therefore, that the invention is not limited to the specific embodiments disclosed, and that modifications and embodiments are intended to be included within the scope of the appended claims. It is also understood that other embodiments of the invention may be practiced that exclude elements / steps not specifically disclosed herein.

Claims

1. 1. A laser manufacturing system comprising: a laser patterning unit having an optically addressed light valve; an image relay capable of directing a patterned laser beam from the laser patterning unit onto a part; Including, the patterned laser beam is capable of ablatively removing material from the part; The laser manufacturing system.

2. 10. The laser manufacturing system of claim 1, the part has multiple layers of material, and selected layers are removable; The laser manufacturing system.

3. 10. The laser manufacturing system of claim 1, the patterned laser beam is further capable of inducing a selected chemical reaction in a component material. The laser manufacturing system.

4. 10. The laser manufacturing system of claim 1, The patterned laser beam may further be capable of laser peening the part material. The laser manufacturing system.

5. 10. The laser manufacturing system of claim 1, the laser patterning unit provides one-dimensional patterning; The laser manufacturing system.

6. 10. The laser manufacturing system of claim 1, the laser patterning unit provides two-dimensional patterning; The laser manufacturing system.

7. 1. A laser manufacturing system comprising: a laser patterning unit having an optically addressed light valve; an image relay capable of directing a patterned laser beam from the laser patterning unit onto a part; Including, the patterned laser beam is capable of inducing a selected chemical reaction or change in the component material; The laser manufacturing system.

8. 8. The laser manufacturing system of claim 7, the patterned laser beam is further capable of ablatively removing material from the part; The laser manufacturing system.

9. 8. The laser manufacturing system of claim 7, the part has multiple layers of material, and selected layers are removable; The laser manufacturing system.

10. 8. The laser manufacturing system of claim 7, The patterned laser beam may further be capable of laser peening the part material. The laser manufacturing system.

11. 8. The laser manufacturing system of claim 7, the laser patterning unit provides one-dimensional patterning; The laser manufacturing system.

12. 8. The laser manufacturing system of claim 7, the laser patterning unit provides two-dimensional patterning; The laser manufacturing system.

13. 1. A method of manufacturing a laser, comprising: providing a laser patterning unit having an optically addressed light valve; directing a patterned laser beam from the laser patterning unit to a part using an image relay; and operatively using the patterned laser beam to at least one of: 1) cause a selected chemical reaction; and 2) ablatively remove material from the part using the patterned laser beam; Including, The laser manufacturing method.

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