Semiconductor adhesive film

Abstract

The present invention provides a semiconductor adhesive film including a base layer containing a polyester compound, a conductive layer formed on the base layer, and an adhesive layer formed on the conductive layer.

Description

[Technical Field]

[0001] The present invention relates to an adhesive film for semiconductors and a method for producing the same. [Background technology]

[0002] Recently, there has been an increasing demand for thinner and smaller semiconductor devices and their packages. Accordingly, as semiconductor wafers become thinner, electrostatic chucks (ESCs) are being used to effectively hold semiconductor wafers. An electrostatic chuck is a device used to hold wafers in place during the semiconductor manufacturing process. It uses electrical force to hold the wafer in place, and unlike existing physical clamps or vacuum suction methods, it minimizes contact damage and provides a uniform clamping force.

[0003] In particular, wafer fixing technology using electrostatic chucks is effective in minimizing physical damage and providing uniform fixing force. Adhesive films are used to fix semiconductor wafers in ESC systems, which protect the wafer surface and prevent damage that may occur during the process.

[0004] The adhesive film used in this process generally must be designed with a multi-layer structure. Such a film must minimize the occurrence of burrs and bubbles that can occur during semiconductor processing, and must be removed cleanly without leaving any residue after precision processing of the wafer is complete. Various research is underway to maintain the above functions while also enabling the wafer to be attached to an electrostatic chuck and preventing deterioration of the wafer from the voltage generated by the electrostatic chuck.

[0005] Recently, as wafer thicknesses have thinned to less than 100 μm, the adhesive strength of films has become even more important. This is essential, especially to reduce wafer damage that may occur during the process. Such films are designed taking into account the unevenness of the wafer surface and can prevent wafer breakage by strengthening their durability against external stress. Furthermore, semiconductor adhesive films must maintain stable performance under various environmental conditions and be able to operate without deformation even at high and low temperatures. To achieve this, the films must have excellent mechanical properties, including electrical insulation, water resistance, and heat resistance. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Korean Patent No. 10-2208071 B1 Summary of the Invention [Problem to be solved by the invention]

[0007] The problem to be solved by the present invention is to provide a semiconductor adhesive film. [Means for solving the problem]

[0008] To solve the above problems, the present invention provides a semiconductor adhesive film including a base layer containing a polyester-based compound, a conductive layer formed on the base layer, and an adhesive layer formed on the conductive layer. [Effects of the Invention]

[0009] The adhesive film for semiconductors according to an embodiment of the present invention can be attached to an electrostatic chuck by electrostatic attraction. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a cross-sectional view of a semiconductor adhesive film according to an embodiment of the present invention. [Figure 2] 10 is a photograph taken during measurement in Experimental Example 3. DETAILED DESCRIPTION OF THE INVENTION

[0011] Various embodiments of the present invention will now be described with reference to the accompanying drawings. It should be understood that the present invention is not limited to specific embodiments, but includes various modifications, equivalents, and / or alternatives of the embodiments of the present invention. In connection with the description of the drawings, similar reference numerals may be used to refer to similar components. In this document, the terms "have," "may have," "include," or "may include" indicate the presence of a given feature (e.g., a value, function, operation, or component such as a part) and do not exclude the presence of additional features. In this document, phrases such as "A or B," "at least one of A and / or B," or "one or more of A and / or B" include all possible combinations of the items listed together. For example, "A or B," "at least one of A and B," or "at least one of A or B" can refer to all of the following: (1) including at least one A; (2) including at least one B; or (3) including at least one A and at least one B. As used in this document, the expression "configured to" can be used interchangeably with, for example, "suitable for," "having the capacity to," "designed to," "adapted to," "made to," or "capable of," depending on the context. The term "configured to" does not necessarily mean "specifically designed to" only. The terms used in this document are merely used to describe particular embodiments and may not be intended to limit the scope of other embodiments. A singular expression may include a plural expression unless the context clearly indicates a different meaning. Terms used herein, including technical or scientific terms, may have the same meaning as commonly understood by a person of ordinary skill in the art described in this document. Terms used in this document that are defined in a general dictionary may be interpreted in a meaning that is identical to or similar to the meaning they have in the context of the relevant art, and may not be interpreted in an idealized or overly formal sense unless expressly defined in this document. In some cases, even terms defined in this document may not be interpreted to exclude embodiments of this document. The embodiments disclosed in this document are presented for the purpose of explanation and understanding of the disclosed technical content, and are not intended to limit the scope of the present invention. Therefore, the scope of this document includes all modifications and various other embodiments based on the technical idea of ​​the present invention. Hereinafter, preferred embodiments of the present invention will be described in detail. Prior to this, the terms and words used in the specification and claims should not be interpreted in a limited manner based on their ordinary or dictionary meanings, but should be interpreted in a manner that corresponds to the technical concept of the present invention, based on the principle that the inventor himself can appropriately define the concept of the term in order to best describe the invention. Therefore, the configurations of the embodiments described in this specification are merely some of the most preferred embodiments of the present invention and do not represent the entire technical idea of ​​the present invention, and various equivalents and modifications may exist that can replace them at the time of this application. Throughout this specification, when a part "comprises" a certain element, this does not mean that it excludes other elements, but that it may further include other elements, unless otherwise specified. The present invention will be specifically described below. The present invention will be described in more detail with reference to the following examples. It will be apparent to those skilled in the art that these examples are provided solely for the purpose of illustrating the present invention in more detail, and that the scope of the present invention is not limited by these examples, in accordance with the gist of the present invention.

[0012] In this specification, the term "electrostatic chuck" refers to an electrostatic chuck (ESC) used to secure a wafer or film (process tape) during semiconductor manufacturing processes. This device uses electrostatic force to secure a wafer instead of physical means, preventing various problems that may occur during the process. Electrostatic chucks use electrostatic force to secure a wafer. This method involves applying a voltage between the wafer and the electrostatic chuck to generate an electrostatic attraction force. Electrostatic chucks are generally designed with a monopolar or bipolar structure, and each structure can be classified according to the number of electrodes.

[0013] In this specification, "reaction with an electrostatic chuck" refers to the fact that when a semiconductor adhesive film described later is positioned near an electrostatic chuck and a voltage is applied to the electrostatic chuck, mutual static electricity is generated between the semiconductor adhesive film and the electrostatic chuck, and the electrostatic chuck and the semiconductor adhesive film can be attracted (chucking) by electrostatic attraction. Semiconductor adhesive film

[0014] Referring to FIG. 1, one embodiment of the present invention may include a semiconductor adhesive film including a base layer 10 containing a polyester-based compound, a conductive layer 20 formed on the base layer, and an adhesive layer 30 formed on the conductive layer. In addition, the adhesive film for semiconductor according to another embodiment of the present invention may further include a release film formed on the adhesive layer.

[0015] The adhesive film for semiconductor according to one embodiment of the present invention is formed by sequentially stacking a base layer, a conductive layer, and an adhesive layer, and may further include a release film formed on the adhesive layer.

[0016] During a semiconductor process, the adhesive film may adhere, for example, to a wafer and an adhesive layer of the semiconductor adhesive film to each other, and the base layer on the other side of the adhesive layer is disposed on the electrostatic chuck side and can react with the electrostatic chuck to easily adsorb the wafer to the electrostatic chuck without damaging the wafer due to static electricity generated in the electrostatic chuck.

[0017] In the adhesive film for semiconductors according to one embodiment of the present invention, the adhesive layer can be adhered to the entire semiconductor wafer within 1.0 seconds from the time when the semiconductor wafer and the adhesive layer come into contact by applying pressure to the center of the adhesive film for semiconductors.

[0018] The surface resistance of the adhesive film for semiconductors according to one embodiment of the present invention when a voltage of 1 kV is applied is 1×10 11 ~1×10 13 If the dielectric loss is less than this range, the dielectric loss may be increased, and the wafer to which the semiconductor adhesive film is adhered may not be fixed to the electrostatic chuck, and conversely, if the dielectric loss is greater than this range, the mobility of electrons may be reduced, and the wafer to which the semiconductor adhesive film is adhered may not be fixed to the electrostatic chuck.

[0019] The present invention is characterized by being able to react with an electrostatic chuck by precisely controlling the electrical properties such as the surface resistance, dielectric loss or dielectric constant of each layer and the semiconductor adhesive film made up of these layers.

[0020] The dielectric loss of the semiconductor adhesive film under the conditions of 25°C and 10 GHz may be 0.02 to 0.1. If it is less than this range, the mobility of electrons will be low, and the environment will not be one in which electrostatic force can be generated, and reaction with the electrostatic chuck may not occur. Conversely, if it exceeds this range, the mobility of electrons will be high, and the loss of negative charge will be large, and reaction with the electrostatic chuck may not occur.

[0021] In addition, the dielectric constant of the semiconductor adhesive film under the conditions of 25°C and 10 GHz may be 2.8 to 3.3. If it is less than this range, the dielectric constant is low and reaction with the electrostatic chuck may not occur, and conversely, if it exceeds this range, the dielectric constant is high and the mobility of electrons cannot be ensured and reaction with the electrostatic chuck may not occur.

[0022] The adhesive film for semiconductors may have a horizontal pulling force of 100 gf / 150 mm to 500 gf / 150 mm when a voltage of 3 Kv is applied to the electrostatic chuck and the adhesive film and the electrostatic chuck react to attract each other. If the pulling force is less than this range, after a wafer is bonded to the adhesive film for semiconductors, the wafer may be released from the electrostatic chuck due to its weight when reacting with the electrostatic chuck. If the pulling force is greater than this range, the attracting force may be so strong that problems may occur during transportation after the semiconductor adhesive film and wafer are bonded from the electrostatic chuck.

[0023] Hereinafter, each of the components constituting the semiconductor adhesive film will be described in detail. According to one embodiment of the present invention, the base layer may include a polyester-based compound.

[0024] The polyester-based compound may include polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polytrimethylene terephthalate (PTT), polycyclohexylene dimethylene terephthalate (PCDT), and polycaprolactone (PCL), and preferably, polyethylene terephthalate (PET) can be used.

[0025] Polyethylene terephthalate is a polymer resin that has advantages such as excellent mechanical properties, electrical properties, chemical resistance, and dimensional stability, and is therefore widely used in the fields of electronic materials such as substrate materials, information recording materials, capacitors, packaging, plate-making, heat-resistant films such as insulating films, and insulation, and is particularly widely used for films.

[0026] The polyethylene terephthalate (PET) used in the present invention can be produced as a polymer resin by condensation polymerization using transesterification of dimethyl terephthalate (DMT) and ethylene glycol (EG), but various known products may also be used.

[0027] The surface roughness is an index indicating the roughness of a film surface and is a numerical representation of minute irregularities and irregularities on the surface. The surface roughness according to one embodiment of the present invention can be expressed as Ra (center line average roughness) or Rz (ten-point average roughness). Ra indicates the average roughness of a surface, and Rz is the average value obtained by measuring the difference between the highest and lowest points on the surface. The average roughness can be measured using, for example, a model such as the SE3300 from Kosaka Corporation.

[0028] In view of the above, the base layer according to one embodiment of the present invention may have a surface roughness Ra value of 55 nm to 70 nm on the base layer side exposed to the outside of the semiconductor adhesive film, and more preferably, the Ra value may be 58 nm to 69 nm. The Rz value may be 1.20 nm to 1.80 nm, and more preferably, 1.30 nm to 1.50 nm. By keeping the Rz value within the above range, when static electricity is applied by the electrostatic chuck, the PET layer disposed on the electrostatic chuck side can react with the electrostatic chuck. If the Rz value is outside the above range, the semiconductor adhesive film according to one embodiment of the present invention will not fall within the limited range of dielectric loss and dielectric constant values ​​that can react with the electrostatic chuck, and therefore reaction with the electrostatic chuck may be incomplete or impossible. It is presumed that changes in the surface roughness of the PET layer affect the transfer of charge due to the voltage applied to the electrostatic chuck.

[0029] To adjust the surface roughness, the base layer may be subjected to additional surface treatment, such as corona discharge treatment, plasma treatment, chemical treatment, primer treatment, or the addition of a slip agent or filler.

[0030] The thickness of the base layer may be 25 to 100 μm, 33 to 70 μm, or 38 to 50 μm. By adjusting the thickness within this range, the transparency of the semiconductor adhesive film can be ensured while the durability of the entire semiconductor adhesive film can be ensured.

[0031] If the thickness of the base layer is less than the above range, wrinkles may occur due to shrinkage during a heat treatment during coating, resulting in an unsightly appearance. Conversely, if the thickness exceeds the above range, dielectric loss may be so low that the base layer may not react with the electrostatic chuck.

[0032] According to one embodiment of the present invention, the conductive layer is formed on a base layer and may include a conductive polymer compound to ensure the conductivity of the semiconductor adhesive film.

[0033] The conductive polymer compound may include one or more selected from the group consisting of poly(3,4-ethylenedioxythiopene) (PEDOT), poly(3,4-ethylenedioxythiopene):polystyrenesulfonic acid (PEDOT:PSS), polyaniline (PANI), polypyrrole (PPy), polythiophene (PT), poly(3-hexylthiophene) (P3HT), and poly(paraphenylenevinylene) (PPV), and preferably includes poly(3,4-ethylenedioxythiopene) (PEDOT), poly(3,4-ethylenedioxythiopene):polystyrenesulfonic acid (PEDOT:PSS).

[0034] PEDOT:PSS is a type of conductive polymer that has high conductivity among plastic materials, good transmittance in the visible light region, is water-soluble, environmentally friendly, solution-processable, and has excellent stability. Therefore, when applied to the semiconductor adhesive film according to one embodiment of the present invention, the transparency of the entire semiconductor adhesive film can be ensured.

[0035] Since PEDOT is a conductive material and PSS is a non-conductive material, it is preferable to improve electrical conductivity by leaving only the minimum amount of PSS necessary to maintain the PEDOT:PSS structure. From this perspective, the molar ratio of PEDOT to PSS may be 1.5 to 2.3:1. By containing them within this range, it is possible to easily form a conductive layer on the base layer while ensuring high conductivity.

[0036] The conductive layer can be formed by crosslinking a mixture of PEDOT:PSS and a water-dispersed polyurethane with a cyclic amine-based compound. This is due to compatibility with the adhesive layer, which will be described later, and because, when the adhesive layer is formed on the conductive layer, a portion of the conductive layer may be removed by a solvent that dissolves the material that makes up the adhesive layer. To prevent this, it is necessary to increase the solvent resistance of the conductive layer, which is achieved in the present invention by crosslinking with a cyclic amine-based compound.

[0037] Here, the cyclic amine compound may include one or more compounds selected from the group consisting of aziridine, azetidine, pyrrolidine, piperidine, azepane, and azocane, and preferably includes aziridine.

[0038] The cyclic amine compound may be included in an amount of 0.05 to 0.5 wt % relative to the total weight of the conductive layer (100 wt %). If the cyclic amine compound is included in an amount less than this range, it may be difficult to ensure solvent resistance to ketone-based solvents used in forming the adhesive layer after the conductive layer is formed. If the cyclic amine compound is included in an amount exceeding this range, the surface resistance of the conductive layer may be too high, and the final film may not react with the electrostatic chuck.

[0039] The weight ratio of the polyurethane to the PEDOT:PSS in the conductive layer may be 1:9, 1.5:8.5, or 3:7. If the PEDOT:PSS content is less than this range, the surface resistance, dielectric loss, and dielectric constant conditions required for functioning as an adhesive film for semiconductors cannot be met. Conversely, if the PEDOT:PSS content is greater than this range, the physical properties can be met, but the amount of polyurethane is too small to be sufficiently crosslinked with the cyclic amine compound crosslinker, which not only fails to ensure solvent resistance but is also undesirable from an economical standpoint.

[0040] The weight ratio of the cyclic amine compound to the total weight of the PEDOT:PSS and water-dispersible polyurethane mixture in the conductive layer may be 100:8 to 63, 100:10 to 63, or 100:12 to 63. If the weight ratio of the cyclic amine compound is below this range, it will not be able to sufficiently crosslink with the carboxyl groups of the water-dispersible polyurethane, and solvent resistance will not be ensured. Conversely, if it exceeds this range, the unreacted cyclic amine compound may migrate to the surface depending on the time and temperature, which is economically undesirable.

[0041] The PEDOT:PSS and water-dispersed polyurethane mixture for the conductive layer may be a solution dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof.

[0042] The solution may further comprise a stabilizer selected from the group consisting of ethylene glycol, sorbitol and mixtures thereof.

[0043] The concentration of the PEDOT:PSS and polyurethane mixture dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof may be 0.8 to 1.2 wt % or 0.8 to 0.9 wt %. If the solution concentration is below this range, PEDOT:PSS particles may come to the surface, causing coating lines on the coating surface. Conversely, if the solution concentration exceeds this range, the solid content may be low, and when increasing the wet thickness, the fluidity of the coating liquid may cause the surface to become uneven.

[0044] The thickness of the conductive layer may be 0.03 to 3 μm. If the thickness of the conductive layer is less than this range, the surface resistance will be high and the dielectric loss will be small, so that the wafer to which the semiconductor adhesive film is adhered may not be fixed to the electrostatic chuck. If the thickness of the conductive layer exceeds this range, the surface resistance will be low and the dielectric loss will be high, so that the wafer to which the semiconductor adhesive film is adhered may not react with the electrostatic chuck.

[0045] According to one embodiment of the present invention, the adhesive layer is formed on the conductive layer, and in order to ensure the adhesiveness of the semiconductor adhesive film, the adhesive layer may include one or more selected from the group consisting of rubber-based compounds, acrylic-based compounds, silicon-based compounds, and urethane-based compounds, and preferably may include a silicon-based compound.

[0046] The silicon-based compound may be derived from an organopolysiloxane of the following Chemical Formula 1 or a derivative thereof and a hydrogen siloxane copolymer of the following Chemical Formula 2 or a derivative thereof.

[0047] [ka]

[0048] Here, R1 and R8 are each independently any one selected from the group consisting of hydrogen, alkyl, and alkenyl, R2 to R7 are any one of hydrogen or alkyl, and n1 may be an integer of 5 to 200,000, preferably an integer of 500 to 100,000, and more preferably an integer of 1,000 to 50,000.

[0049] [ka]

[0050] Here, the R9 to R 18 At least one of R9 to R 18 The remainders excluding the hydrogen moiety are each independently alkyl, the n2 is an integer of 1 to 200, and the n3 is an integer of 1 to 100.

[0051] Preferably, the organopolysiloxane or derivative thereof of Chemical Formula 1 is a polydimethylsiloxane containing vinyl groups at both ends, and has a weight-average molecular weight of 600,000 to 700,000 and an average water content of 300,000 to 400,000. The vinyl group content may be 0.02 to 0.2 mmol / g, 0.1 to 0.2 mmol / g, or 0.15 to 0.2 mmol / g. If the vinyl group content is below this range, sufficient cross-linking with Si—H may not occur, resulting in an increased dielectric loss value and thus a failure to react with an electrostatic chuck. Conversely, if the vinyl group content exceeds this range, the cross-linking density with Si—H may increase, resulting in a reduced dielectric loss value and thus a failure to react with an electrostatic chuck.

[0052] Preferably, the hydrogen siloxane copolymer of Chemical Formula 2 or its derivatives may have one or two hydro groups (—H) substituted with an alkyl group having 1 to 2 carbon atoms. More preferably, the hydrogen siloxane copolymer of Chemical Formula 2 may be an alkylhydrosiloxane-dialkylsiloxane copolymer, and even more preferably, a methylhydrosiloxane-dimethylsiloxane copolymer, and the R 12 are hydrogen, and the remaining R9 to R 11 and R 13 ~R 19 may be substituted with methyl. The weight average molecular weight (Mw) of the hydrogen siloxane copolymer of Chemical Formula 2 may be 1,000 to 10,000, and more preferably 1,500 to 4,000.

[0053] The Si-H content of the hydrogen siloxane copolymer or derivative thereof of Formula 2 may be 4 to 16 mmol / g, 4 to 10 mmol / g, or 4 to 5 mmol / g. If the Si-H content is below this range, the vinyl groups contained in the organopolysiloxane or derivative thereof of Formula 1 may not be sufficiently crosslinked, resulting in high dielectric loss. Conversely, if the Si-H content exceeds this range, unreacted Si-H groups may be generated and migrate to the surface of the adhesive layer.

[0054] The silicon-based compound preferably uses platinum as a catalyst when reacting the compound of Formula 1 with the compound of Formula 2. In addition, the present invention can be applied to an addition reaction (curing) step, particularly to increase crosslink density and decrease the dielectric constant.

[0055] The molar ratio of the vinyl group contained in the organopolysiloxane of the formula 1 or its derivative to the Si—H group contained in the hydrogen siloxane copolymer of the formula 2 or its derivative may be 1:1 to 3.

[0056] If the molar ratio exceeds the above range, the crosslink density increases, but out-gassing occurs due to the hydrogen gas generated when the Si-H that cannot react with the vinyl increases. Conversely, if the molar ratio is below the above range, the number of crosslinking points with the vinyl decreases, the crosslink density and the dielectric constant decrease, and the dielectric loss increases, which may make it difficult to react with the electrostatic chuck.

[0057] The adhesive layer may be a pressure-sensitive adhesive layer. In addition to the organopolysiloxane of Formula 1 or its derivative and the hydrogen siloxane copolymer of Formula 2 or its derivative, additional components may be included to improve the physical properties of the pressure-sensitive adhesive layer.

[0058] Additional components may include silicone gum or MQ resin, etc. The adhesive layer can be attached to sensitive areas such as wafers or organic coating layers, and has good adhesive strength and a predetermined crosslink density, allowing the adhesive properties of the product to be maintained even after a certain period of time.

[0059] The crosslink density of the adhesive layer is 0.15 mol / cm 3 ~0.5mol / cm 3 If the crosslink density of the adhesive layer exceeds the above range, the contact area of ​​the surface may decrease, resulting in a decrease in adhesive strength, whereas if the crosslink density of the adhesive layer is below the above range, the adhesive layer may leave residue or a residue when peeled off from the wafer due to excessive adhesiveness, causing contamination in the semiconductor process.

[0060] In an embodiment of the semiconductor adhesive film according to the present invention, the thickness of the adhesive layer may be 15 to 50 μm, 15 to 35 μm, or 15 to 25 μm. If the thickness of the adhesive layer is less than the above range, the dielectric loss may be increased, and the wafer to which the semiconductor adhesive film is adhered may not be fixed to the electrostatic chuck. Conversely, if the thickness exceeds the above range, the dielectric loss may be decreased, and the wafer to which the semiconductor adhesive film is adhered may not be fixed to the electrostatic chuck. In addition, if the thickness of the adhesive layer exceeds the above range, the probability of burrs occurring when cutting the semiconductor adhesive film increases.

[0061] In addition, the thickness of the adhesive layer may be 50% or less of the total thickness of the semiconductor adhesive film. If the thickness of the adhesive layer exceeds this range, the flexibility of the adhesive layer increases the flexibility of the entire semiconductor adhesive film, weakening the stiffness of the film, and therefore increasing the probability of bubbles occurring when the semiconductor adhesive film is adhered to a wafer.

[0062] Manufacturing method of semiconductor adhesive film

[0063] In one embodiment of the present invention, a semiconductor adhesive film can be prepared by preparing a base layer with an adjusted surface roughness, and then gravure-coating the conductive layer onto the base layer. The conductive layer can be dried for 30 to 90 seconds with hot air at 60 to 100°C or 20 to 35 Hz. If the drying time or temperature is below the above range, the drying is insufficient, resulting in incomplete curing or solvent volatilization, which can affect electrical properties such as dielectric constant.

[0064] The adhesive layer can be applied to the conductive layer by slot die coating or comma coating. The adhesive layer can be dried for 90 to 180 seconds with hot air at 60 to 150°C or 30 to 35 Hz. If the drying time or temperature is below the above range, the layer may not be sufficiently dried, resulting in incomplete curing or solvent volatilization, which may affect electrical properties such as dielectric constant. Optionally, a release film can be further laminated onto the adhesive layer.

[0065] Hereinafter, the present invention will be described in detail with reference to examples. However, the examples according to the present invention can be modified into various other forms, and the scope of the present invention should not be interpreted as being limited to the examples detailed below. The examples of the present invention are provided to more completely explain the present invention to those skilled in the art.

[0066] Examples and Comparative Examples Example 1 Base layer manufacturing:

[0067] To control the surface roughness, a PET film containing 0.8 wt% of spherical silica particles (20 wt% solids) coated with a 0.1 μm thick metal compound (alumina) was prepared as a base layer. The thickness of the PET film used as the base layer was 50 μm. Fabrication of the conductive layer:

[0068] A conductive layer was formed on the PET film. A 0.8 wt% aqueous solution (weight % of the mixture based on 100 wt% aqueous solution) of poly(3,4-ethylenedioxythiopene) polystyrene sulfonate (PEDOT-PSS) and water-dispersible polyurethane (PEDOT-PSS:polyurethane = 1:9 weight ratio) was crosslinked with 0.35 wt% aziridine (weight % of aziridine based on 100 wt% conductive layer) for 45 minutes at room temperature and atmospheric pressure. The resulting reaction mixture was gravure coated onto the PET film and dried at 60°C for 20 seconds, 80°C for 20 seconds, and 100°C for 20 seconds with 35 Hz hot air to form a 0.2 μm-thick conductive layer. The PEDOT:PSS molar ratio was 1.8:1. Preparation of adhesive layer:

[0069] An adhesive layer was formed on the conductive layer. 27g of polydimethylsiloxane (weight average molecular weight: approximately 650,000) of Formula 1, which contains vinyl groups at both ends at a content of 0.2mmol / g, and 2.3g of methylhydrosiloxane-dimethylsiloxane copolymer (weight average molecular weight: approximately 2,500) of Formula 2, which has a Si-H content of 4mmol / g, were mixed with 70g of toluene, and 0.005g of platinum was added as a catalyst. The mixture was reacted at room temperature and atmospheric pressure for 200 minutes. The product was slot-die coated onto the conductive layer and dried with hot air at 60°C for 50 seconds, 110°C for 50 seconds, and 150°C for 50 seconds at 35Hz to form a 20μm-thick adhesive layer.

[0070] Examples 2 to 15 and Comparative Examples 1 to 4

[0071] The adhesive films for semiconductors of Examples and Comparative Examples were manufactured using the same manufacturing method as in Example 1, but with some changes in the components as shown in Table 1 below. The surface roughness was controlled by adjusting the silica content in the PET film. For example, in Example 3, the silica gel content was 1 wt% relative to 100 wt% of the PET film.

[0072] [Table 1]

[0073] Experimental Example Experimental example 1: Surface resistance measurement

[0074] The surface resistance of the semiconductor adhesive films manufactured in the examples and comparative examples was measured at 25° C. and 10 GHz using a surface resistance measuring instrument (Mitsubishi Chemical, MCP-HT450 Japan).

[0075] Experimental Example 2: Dielectric loss and dielectric constant measurement

[0076] The changes in dielectric loss and dielectric constant of the semiconductor adhesive films prepared in the examples and comparative examples were measured at 25°C and 10GHz using a dielectric meter (Keysight, N225A, USA).

[0077] Experimental example 3: Repulsive force measurement

[0078] The adhesive films for semiconductors of the examples and comparative examples were cut into rectangular shapes measuring 15cm x 25cm, with a 15cm x 25cm width x 25cm length, a ceramic lower body, a 500um thick electrode layer containing Al2O3 as the lower insulating layer, and a 130um thick electrode layer containing Al2O3 as the upper dielectric layer. When a voltage of 3Kv was applied using an electrostatic chuck (bipolar type) demo equipment from EST, with the base layer surface of the adhesive film for semiconductors attached to the electrostatic chuck, one side of the cut adhesive film for semiconductors was pulled, and the force of the film movement was used as a repulsive force to measure the insulation resistance using a high-voltage insulation resistance tester, Teraohm XA 10kv-Standard Set MI-3210 from METREL. The experimental photograph is shown in Figure 2.

[0079] Experimental Example 4: Residual electrostatic force measurement

[0080] After the procedure of Experimental Example 3, the voltage of the electrostatic chuck was cut off, and the force at which the film moved was measured by pulling one side of the cut semiconductor adhesive film of each of the Examples and Comparative Examples to measure the residual electrostatic force. At this time, if the electrostatic force was less than 1 gf / 150 mm, it was marked with ○, and if it was 1 gf / 150 mm or more, it was marked with ×.

[0081] Experimental Example 5 The appearance of the film was visually observed and classified as follows: ○: Overall transparent appearance, ×: Opaque or appearance deformation such as film damage. The results for Experimental Examples 1 to 5 are shown in Table 2.

[0082] [Table 2] TIFF2026508542000006.tif32166 [Explanation of symbols]

[0083] 10: Base layer 20: Conductive layer 30:Adhesive layer

Claims

1. a base layer comprising a polyester-based compound; a conductive layer formed on the base layer; and an adhesive layer formed on the conductive layer; A semiconductor adhesive film characterized by:

2. The polyester-based compound includes at least one selected from the group consisting of polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polytrimethylene terephthalate (PTT), polycyclohexylene dimethylene terephthalate (PCDT), and polycaprolactone (PCL). The semiconductor adhesive film according to claim 1.

3. The surface roughness (Ra) value of the outer surface of the base layer is 55 nm to 70 nm. The semiconductor adhesive film according to claim 1.

4. The surface roughness (Rz) value of the outer surface of the base layer is 1.20 nm to 1.80 nm. The semiconductor adhesive film according to claim 1.

5. The conductive layer contains a conductive polymer compound. The semiconductor adhesive film according to claim 1.

6. The conductive polymer compound includes at least one selected from the group consisting of poly(3,4-ethylenedioxythiopene) (PEDOT), poly(3,4-ethylenedioxythiopene):polystyrenesulfonic acid (PEDOT:PSS), polyaniline (PANI), polypyrrole (PPy), polythiophene (PT), poly(3-hexylthiophene) (P3HT), and poly(paraphenylenevinylene) (PPV). The semiconductor adhesive film according to claim 5 .

7. the conductive polymer compound is poly(3,4-ethylenedioxythiopene) (PEDOT) poly(3,4-ethylenedioxythiopene):polystyrenesulfonic acid (PEDOT:PSS), The molar ratio of PEDOT to PSS is 1.5 to 2.3:

1. The semiconductor adhesive film according to claim 6.

8. The conductive layer further contains a cyclic amine compound. The semiconductor adhesive film according to claim 5 .

9. The cyclic amine compound includes at least one selected from the group consisting of aziridine, azetidine, pyrrolidine, piperidine, azepane, and azocane. The semiconductor adhesive film according to claim 8.

10. The adhesive layer contains at least one compound selected from the group consisting of a rubber-based compound, an acrylic-based compound, a silicon-based compound, and a urethane-based compound. The semiconductor adhesive film according to claim 1.

11. The silicon-based compound is represented by the following chemical formula 1: 【Chemistry 1】 (wherein the R １ and R ８ are each independently any one selected from the group consisting of hydrogen, alkyl, and alkenyl, and ２ ~R ７ is either hydrogen or alkyl, and n1 is an integer of 5 to 200,000. or a derivative thereof, and, Chemical Formula 2: 【Chemistry 2】 (wherein the R ９ ~R １８ At least one of R ９ ~R １８ wherein the remainders excluding the hydrogen moiety are each independently alkyl, n2 is an integer of 1 to 200, and n3 is an integer of 1 to 100. or a derivative thereof. The semiconductor adhesive film according to claim 10.

12. The molar ratio of the vinyl group contained in the organopolysiloxane of Formula 1 or its derivative to the Si—H group of the hydrogen siloxane copolymer of Formula 2 or its derivative is 1:1 to 3. The semiconductor adhesive film according to claim 11.

13. The adhesive film for semiconductors has a surface resistance of 1×10 when an external voltage of 1 kV is applied. １１ ~1 x 10 １３ Ω / sq The semiconductor adhesive film according to claim 1.

14. The semiconductor adhesive film has a dielectric loss of 0.02 to 0.1 under conditions of 25°C and 10 GHz. The semiconductor adhesive film according to claim 1.

15. The semiconductor adhesive film has a dielectric constant of 2.8 to 3.3 at 25°C and 10 GHz. The semiconductor adhesive film according to claim 1.

16. When a voltage of 3 Kv is applied to the electrostatic chuck, the adhesive film and the electrostatic chuck react to each other and are mutually attracted, and the horizontal pulling force of the adhesive film is 100 gf / 150 mm to 500 gf / 150 mm. The semiconductor adhesive film according to claim 1.

Images