Semiconductor adhesive film

Abstract

The adhesive film for semiconductors according to one embodiment of the present invention includes a base layer, a conductive layer formed on the base layer, and an adhesive layer formed on the conductive layer, and has a surface resistance of 1×10 to 1×10 Ω / sq when a voltage of 1 kV is applied, and the thickness of the adhesive layer is 15 to 50 μm. When adhered to a semiconductor, the adhesive film allows the semiconductor wafer to be stably fixed to the electrostatic chuck and simultaneously protects the wafer.

Description

[Technical Field]

[0001] The present invention relates to an adhesive film for semiconductors, and more particularly, to an adhesive film for semiconductors that has a certain range of electrical properties when adhered to a semiconductor wafer and can minimize the generation of burrs and bubbles that may occur when adhered to a semiconductor wafer. [Background technology]

[0002] In recent years, there has been an increasing demand for thinner and smaller semiconductor devices and their packages. Accordingly, as semiconductor wafers become thinner, electrostatic chucks (ESCs) are being used to effectively hold semiconductor wafers. An electrostatic chuck is a device used to hold a wafer during a semiconductor manufacturing process. It uses electrical force to hold a wafer. Unlike existing methods such as physical clamps and vacuum suction, it minimizes contact damage and provides a uniform holding force.

[0003] To fix a semiconductor wafer in an electrostatic chuck, a semiconductor adhesive film must be attached to the wafer. In this case, the semiconductor adhesive film must have appropriate electrical properties so that the wafer can be fixed in the electrostatic chuck through electrical force, and must also be able to minimize the generation of burrs and bubbles that may occur when adhering to the semiconductor wafer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] KR 10-2208071 B1 Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention aims to solve the above problems and provides a semiconductor adhesive film that includes an adhesive layer formed on a conductive layer and has a specified range of electrical properties.

[0006] Another object of the present invention is to provide an adhesive film for semiconductors that minimizes the generation of burrs and voids that may occur when the film is adhered to a semiconductor wafer. [Means for solving the problem]

[0007] The adhesive film for semiconductors according to one embodiment of the present invention includes a base layer, a conductive layer formed on the base layer, and an adhesive layer formed on the conductive layer, and the adhesive film for semiconductors has a surface resistance in the range of 1×10 11 to 1×10 13 Ω / sq when a voltage of 1 kV is applied, and the thickness of the adhesive layer is 15 to 50 μm. In the adhesive film for semiconductor according to one embodiment of the present invention, the thickness of the adhesive layer may be formed to be 50% or less of the thickness of the adhesive film for semiconductor. In the adhesive film for semiconductor according to one embodiment of the present invention, the conductive layer may be formed to a thickness of 0.03 to 3 μm. The adhesive film for semiconductor according to an embodiment of the present invention may further include a release film formed on the adhesive layer.

[0008] In the semiconductor adhesive film according to one embodiment of the present invention, the adhesive layer can be laminated to the entire semiconductor wafer within 1.0 seconds from the time when the semiconductor wafer and the adhesive layer come into contact by applying pressure to the center of the semiconductor adhesive film.

[0009] In one embodiment of the semiconductor adhesive film of the present invention, the adhesive layer may include one or more selected from the group consisting of rubber-based compounds, acrylic-based compounds, silicon-based compounds, and urethane-based compounds. In the adhesive film for semiconductor according to one embodiment of the present invention, the thickness of the adhesive layer is 15 to 35 μm or 15 to 25 μm. In the adhesive film for semiconductor according to one embodiment of the present invention, the thickness of the base layer is 25 to 100 μm, 33 to 70 μm, or 38 to 50 μm. [Effects of the Invention]

[0010] The adhesive film for semiconductors according to the present invention, when adhered to a semiconductor, enables the semiconductor wafer to be stably fixed to an electrostatic chuck and at the same time protects the wafer. The adhesive film for semiconductors according to the present invention minimizes burrs and bubbles that may occur when semiconductors are adhered. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a cross-sectional view of a semiconductor adhesive film according to an embodiment of the present invention. [Figure 2] FIG. 3 is a cross-sectional view of a semiconductor adhesive film according to another embodiment of the present invention. [Figure 3] 3 is a diagram showing a state in which an adhesive film for semiconductors according to an embodiment of the present invention is adhered to a semiconductor wafer. [Figure 4] 1 is a diagram showing a state in which an adhesive film for semiconductors according to an embodiment of the present invention is laminated on the entire semiconductor wafer. [Figure 5] 1 is a diagram showing a state in which a semiconductor adhesive film according to an embodiment of the present invention has not been laminated to a semiconductor wafer. [Figure 6] 1 is a photograph of equipment for performing a burr test on an adhesive film for semiconductors according to an embodiment of the present invention. [Figure 7] 1 is a photograph of a semiconductor adhesive film according to an embodiment of the present invention after a burr test. [Figure 8] 1 is a photograph of a semiconductor adhesive film according to an embodiment of the present invention after a burr test. [Figure 9] 1 is a photograph of a semiconductor adhesive film according to an embodiment of the present invention after a burr test. [Figure 10] 1 is a photograph of a semiconductor adhesive film according to an embodiment of the present invention after a burr test. [Figure 11] 1 is a photograph of a semiconductor adhesive film according to an embodiment of the present invention after a burr test. [Figure 12] 1 is a photograph of a semiconductor adhesive film according to an embodiment of the present invention after a burr test. DETAILED DESCRIPTION OF THE INVENTION

[0012] Various embodiments of the present invention will now be described with reference to the accompanying drawings. It should be understood that the present invention is not limited to specific embodiments, but includes various modifications, equivalents, and / or alternatives of the embodiments of the present invention. In connection with the description of the drawings, similar reference numerals may be used to refer to similar components. In this document, the terms "have," "can have," "include," or "can include" refer to the presence of a given feature (e.g., a value, function, operation, or component such as a part) and do not exclude the presence of additional features. In this document, phrases such as "A or B," "at least one of A and / or B," or "one or more of A and / or B" include all possible combinations of the items listed together. For example, "A or B," "at least one of A and B," or "at least one of A or B" can refer to (1) at least one A, (2) at least one B, or (3) both at least one A and at least one B. The expression "configured to" used in this document may be used alternatively, depending on the context, e.g., "suitable for," "having the capacity to," "designed to," "adapted to," "made to," or "capable of." The term "configured to" does not necessarily mean "specifically designed to." The terms used in this document are merely used to describe particular embodiments and are not intended to limit the scope of other embodiments. A singular term may include a plural term unless the context clearly dictates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as commonly understood by a person of ordinary skill in the art described herein. Terms used in this document that are defined in a general dictionary may be interpreted to have the same or similar meaning as the meaning they have in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless expressly defined in this document. In some cases, even terms defined in this document may not be interpreted to exclude embodiments of this document. Therefore, it should be understood that the configurations of the embodiments described in this specification are merely some of the most preferred embodiments of the present invention and do not represent the entire technical idea of ​​the present invention, and that there may be various equivalents and modifications that can replace them at the time of this application. Throughout the specification, when a part is said to "comprise" a certain element, this does not mean that it excludes other elements, but that it may further include other elements, unless otherwise specified to the contrary. The objectives, particular advantages, and novel features of the present invention described herein will become more apparent from the following detailed description and preferred embodiments taken in conjunction with the accompanying drawings. It should be noted that, when assigning reference numerals to components in each drawing, the same components are assigned the same numerals whenever possible, even when they appear in different drawings. Furthermore, terms such as "one side," "other side," "first," and "second" are used to distinguish one component from another, and are not intended to limit the components. In the following description of the present invention, a detailed description of related prior art that may unnecessarily obscure the gist of the present invention will be omitted. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will now be described in detail with reference to the accompanying drawings, in which like reference numerals refer to like elements throughout.

[0013] In this specification, the term "electrostatic chuck" refers to an electrostatic chuck (ESC) that is a device used to secure a wafer or film (process tape) during semiconductor manufacturing processes. This device uses electrostatic force to secure a wafer instead of physical means, preventing various problems that may occur during the process. Electrostatic chucks use electrostatic force to secure a wafer. This method involves applying a voltage between the wafer and the electrostatic chuck to generate an electrostatic attraction force. Electrostatic chucks are generally designed with a monopolar or bipolar structure, and each structure can be classified according to the number of electrodes.

[0014] In this specification, "reaction with an electrostatic chuck" refers to the fact that when a semiconductor adhesive film described later is positioned near an electrostatic chuck and a voltage is applied to the electrostatic chuck, mutual static electricity is generated between the semiconductor adhesive film and the electrostatic chuck, and the electrostatic chuck and the semiconductor adhesive film can be electrostatically attracted to each other by electrostatic attraction.

[0015] The semiconductor adhesive film 1 according to one embodiment of the present invention includes a base layer 10, a conductive layer 20 formed on the base layer 10, and an adhesive layer 30 formed on the conductive layer 20, and has a surface resistance in the range of 1×10 11 to 1×10 13 Ω / sq when a voltage of 1 kV is applied, and the thickness of the adhesive layer 30 is 15 to 50 μm.

[0016] The adhesive film for semiconductor 1 according to another embodiment of the present invention may further include a release film 40 formed on the adhesive layer 30 .

[0017] Referring to FIG. 1, an adhesive film 1 for semiconductors according to an embodiment of the present invention is formed in a form in which a base layer 10, a conductive layer 20, and an adhesive layer 30 are laminated in this order.

[0018] The substrate layer 10 may be selected from the group consisting of polyethylene terephthalate, polyethylene, polyimide, acrylic resin, cycloolefin polymer, mixtures thereof, and copolymers thereof.

[0019] In addition, the adhesive film 1 for semiconductor of the present invention may further include a release film 40 formed on the adhesive layer 30, as shown in FIG.

[0020] When a voltage of 1 kV is applied to the semiconductor adhesive film 1 according to one embodiment of the present invention, the surface resistance may be 1×10 to 1×10 Ω / sq. If it is less than this range, the dielectric loss increases and the wafer W to which the semiconductor adhesive film 1 is adhered may not be fixed to the electrostatic chuck, and conversely, if it exceeds this range, the dielectric loss decreases but the mobility of electrons decreases and the wafer W to which the semiconductor adhesive film 1 is adhered may not be fixed to the electrostatic chuck.

[0021] The main feature of the present invention is that the electrical properties such as the surface resistance, dielectric loss or dielectric constant of each layer and the combined film 1 for semiconductor adhesive can be precisely controlled to enable the film to be stably fixed to the electrostatic chuck.

[0022] In the adhesive film for semiconductor 1 according to one embodiment of the present invention, the thickness of the adhesive layer 30 is 15 to 35 μm or 15 to 25 μm.

[0023] The thickness of the adhesive layer 30 may be 15 to 50 μm, 15 to 35 μm, or 15 to 25 μm. If the thickness of the adhesive layer 30 is less than the above range, the dielectric loss increases and the wafer W to which the semiconductor adhesive film 1 is adhered may not be fixed to the electrostatic chuck. Conversely, if the thickness exceeds the above range, the dielectric loss decreases and the wafer W to which the semiconductor adhesive film 1 is adhered may not be fixed to the electrostatic chuck. Furthermore, if the thickness of the adhesive layer 30 exceeds the above range, the probability of burrs occurring when the film 1 is cut increases.

[0024] In the adhesive film 1 for semiconductor according to one embodiment of the present invention, the thickness of the adhesive layer may be formed to be 50% or less of the thickness of the adhesive film for semiconductor.

[0025] In addition, the thickness of the adhesive layer 30 may be formed to be 50% or less of the thickness of the semiconductor adhesive film 1. If the thickness of the adhesive layer 30 exceeds this range, the flexibility of the adhesive layer 30 increases the flexibility of the entire film 1, weakening the stiffness of the film 1, and therefore, when the film 1 is adhered to the wafer W, the probability of voids occurring increases.

[0026] In the adhesive film for semiconductor 1 according to one embodiment of the present invention, the conductive layer 20 may be formed to a thickness of 0.03 to 3 μm.

[0027] The conductive layer 20 may be selected from the group consisting of poly(3,4-ethylenedioxythiophene) (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate) (PEDOT-PSS), carbon nanotubes (CNTs), graphene, indium tin oxide (ITO), silver nanowires, and combinations thereof. The conductive layer 20 of the present invention is characterized in that it is essentially required to be transparent in addition to the above electrical properties.

[0028] The conductive layer 20 may be formed by crosslinking a mixture of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersible polyurethane with aziridine. When forming the adhesive layer 30 on the conductive layer 20, a portion of the conductive layer 20 may be removed by a solvent that dissolves the material that makes up the adhesive layer 30. To prevent this, it is necessary to increase the solvent resistance of the conductive layer 20, which is achieved in the present invention by crosslinking with aziridine.

[0029] The weight ratio of polyurethane to poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS) in the conductive layer 20 may be 1:9, 1.5:8.5, or 3:7. If the content of PEDOT-PSS is less than this range, the surface resistance, dielectric loss, and dielectric constant required for reaction with an electrostatic chuck cannot be satisfied. Conversely, if the content of PEDOT-PSS is greater than this range, the physical properties can be satisfied, but the amount of polyurethane is too small to sufficiently crosslink with the aziridine crosslinker, which not only fails to ensure solvent resistance but is also undesirable from an economical standpoint.

[0030] The weight ratio of the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersible polyurethane mixture to aziridine in the conductive layer 20 may be 100:8 to 63, 100:10 to 63, or 100:12 to 63. If the weight ratio of aziridine is less than the above range, it will not be able to crosslink sufficiently with the carboxyl groups of the water-dispersible polyurethane, and solvent resistance will not be ensured. Conversely, if the weight ratio exceeds the above range, unreacted aziridine may migrate to the surface depending on the time and temperature, which is economically undesirable.

[0031] The poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane mixture of the conductive layer 20 may be a solution dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof. The solution may further include a stabilizer selected from the group consisting of ethylene glycol, sorbitol, and mixtures thereof.

[0032] The concentration of the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and polyurethane mixture dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof may be 0.8 to 1.2 wt % or 0.8 to 0.9 wt %. If the solution concentration is below this range, Pedot-PSS particles may come out to the surface, causing coating lines to form on the coating surface. Conversely, if the solution concentration exceeds this range, the solid content may decrease, and when the wet thickness is increased, the coating surface may become uneven due to the fluidity of the coating solution.

[0033] The thickness of the conductive layer 20 may be 0.03 to 3 μm. If the thickness of the conductive layer 20 is less than the above range, the surface resistance will be high and the dielectric loss will be small, which may cause the wafer W to which the semiconductor adhesive film 1 is adhered to not be fixed to the electrostatic chuck, and if the thickness of the conductive layer 20 exceeds the above range, the surface resistance will be low and the dielectric loss will be high, which may cause the wafer W to which the semiconductor adhesive film 1 is adhered to not be fixed to the electrostatic chuck.

[0034] Alternatively, the conductive layer 20 can be gravure coated onto the substrate layer 10 .

[0035] The conductive layer 20 can be dried for 30 to 90 seconds with hot air at 60 to 100°C or 20 to 35 Hz. If the drying time or drying temperature is less than the above range, the drying may be insufficient, resulting in incomplete curing or solvent volatilization, which may affect electrical properties such as dielectric constant.

[0036] In one embodiment of the semiconductor adhesive film 1 of the present invention, the adhesive layer 30 may contain one or more compounds selected from the group consisting of rubber-based compounds, acrylic-based compounds, silicon-based compounds, and urethane-based compounds.

[0037] In the semiconductor adhesive film 1 according to one embodiment of the present invention, the adhesive layer 30 may include one or more selected from the group consisting of rubber-based compounds, acrylic-based compounds, silicon-based compounds, and urethane-based compounds, and preferably includes a silicon-based compound.

[0038] The silicon-based compound may be derived from an organopolysiloxane of the following formula 1 or a derivative thereof and a hydrogen siloxane copolymer of the following formula 2 or a derivative thereof.

[0039] [ka]

[0040] Here, R1 and R8 are each independently any one selected from the group consisting of hydrogen, alkyl, and alkenyl, R2 to R7 are either hydrogen or alkyl, and n1 may be an integer of 5 to 200,000, preferably an integer of 500 to 100,000, and more preferably an integer of 1,000 to 50,000.

[0041] [ka]

[0042] Here, at least one of R9 to R18 is hydrogen, and the rest of R9 to R18 excluding the hydrogen moiety are each independently alkyl, n2 is an integer of 1 to 200, and n3 is an integer of 1 to 100.

[0043] Preferably, the organopolysiloxane of Chemical Formula 1 or its derivative is a polydimethylsiloxane containing vinyl groups at both ends, and its molecular weight may be a weight-average molecular weight of 600,000 to 700,000 and a number-average molecular weight of 300,000 to 400,000, and the content of the vinyl groups may be 0.02 to 0.2 mmol / g, 0.1 to 0.2 mmol / g, or 0.15 to 0.2 mmol / g. If the content of vinyl groups is less than the above range, crosslinking with Si-H may not be sufficient, and the dielectric loss value may increase, resulting in a failure to react with an electrostatic chuck. Conversely, if the content of vinyl groups is greater than the above range, the crosslink density with Si-H may increase, resulting in a failure to react with an electrostatic chuck, resulting in a failure to react with an electrostatic chuck.

[0044] Preferably, the hydrogen siloxane copolymer of formula 2 or its derivatives has one or two hydro groups (-H) substituted with an alkyl group having 1 or 2 carbon atoms. More preferably, the hydrogen siloxane copolymer of formula 2 may be an alkylhydrosiloxane-dialkylsiloxane copolymer, or even more preferably, a methylhydrosiloxane-dimethylsiloxane copolymer, in which R12 is hydrogen and the remaining R9 to R11 and R13 to R19 are substituted with methyl. The weight average molecular weight (Mw) of the hydrogen siloxane copolymer of formula 2 may be 1,000 to 10,000, and even more preferably 1,500 to 4,000.

[0045] The Si-H content of the hydrogen siloxane copolymer or derivative thereof of Chemical Formula 2 may be 4 to 16 mmol / g, 4 to 10 mmol / g, or 4 to 5 mmol / g. If the Si-H content is below this range, the vinyl groups contained in the organopolysiloxane or derivative thereof of Chemical Formula 1 may not be sufficiently crosslinked, resulting in high dielectric loss. Conversely, if the Si-H content exceeds this range, unreacted Si-H groups may be generated and migrate to the surface of the adhesive layer.

[0046] The silicon-based compound preferably uses platinum as a catalyst when reacting the compound of Chemical Formula 1 with the compound of Chemical Formula 2. In addition, the present invention can apply an addition reaction (curing) step to increase crosslink density and reduce the dielectric constant.

[0047] The molar ratio of the vinyl group contained in the organopolysiloxane of the formula 1 or its derivative to the Si—H group of the hydrogen siloxane copolymer of the formula 2 or its derivative may be 1:1-3.

[0048] If the molar ratio exceeds the above range, the crosslink density increases, but out-gassing occurs due to the hydrogen gas generated when the Si-H that has not reacted with the vinyl increases. Conversely, if the molar ratio is below the above range, the number of crosslinking points with the vinyl decreases, the crosslink density and the dielectric constant decrease, and the dielectric loss increases, which may make it difficult to react with the electrostatic chuck.

[0049] The adhesive layer may be a pressure-sensitive adhesive layer. In addition to the organopolysiloxane or its derivative of Chemical Formula 1 and the hydrogen siloxane copolymer or its derivative of Chemical Formula 2, other components may be included to improve the physical properties of the pressure-sensitive adhesive layer.

[0050] Further components include silicone gum or MQ resin, etc. The adhesive layer can be adhered to sensitive areas such as wafers or organic coating layers, has good adhesive strength, and maintains a predetermined crosslink density so that the adhesive properties of the product can be maintained even after a certain period of time. The adhesive layer 30 can be formed on the conductive layer 20 by slot die coating or comma coating.

[0051] The adhesive layer 20 can be dried for 90 to 180 seconds with hot air at 60 to 150°C or 30 to 35 Hz. If the drying time or drying temperature is below the above range, the drying may be insufficient, resulting in incomplete curing or solvent volatilization, which may affect electrical properties such as dielectric constant.

[0052] In one embodiment of the present invention, in the semiconductor adhesive film 1, the adhesive layer 30 can be laminated to the entire semiconductor wafer W within 1.0 seconds from the time when the semiconductor wafer W and the adhesive layer 30 come into contact by applying pressure to the center of the semiconductor adhesive film 1.

[0053] It is preferable that the time required for laminating the semiconductor adhesive film 1 over the entire wafer W be 1 second or less. Whether the semiconductor adhesive film 1 can be quickly laminated to the wafer W depends on the wetting performance of the adhesive layer 30, which penetrates into the surface of the wafer W. The thicker the adhesive layer 30, the higher the wetting performance. If the wetting performance is weak and the lamination time exceeds 1 second, the film 1 may float on the wafer W as shown in Figure 5, and there is a high possibility of fine bubbles occurring. Therefore, in order to achieve a lamination time of 1 second or less, the adhesive layer 30 is formed to be 15 μm or more. In the adhesive film for semiconductor 1 according to one embodiment of the present invention, the thickness of the base layer 10 is 25 to 100 μm, 33 to 70 μm, or 38 to 50 μm.

[0054] The thickness of the substrate layer 10 may be 25 to 100 μm, 33 to 70 μm, or 38 to 50 μm. If the thickness of the substrate layer 10 is less than the above range, wrinkles may occur due to shrinkage during a heat treatment during coating, resulting in poor appearance. Conversely, if the thickness exceeds the above range, dielectric loss may be so low that the substrate may not react with the electrostatic chuck. The thicknesses of the substrate layer (S), the conductive layer (C) and the adhesive layer (A) may satisfy the following numerical formulas 1 and 2 simultaneously.

[0055] [Number 1] A / (S+C+A)≦0.5

[0056] [Number 2] C+A≦S

[0057] When the above formulas 1 and 2 are satisfied simultaneously, a semiconductor adhesive film having excellent burr characteristics can be obtained. Examples of the present invention will be described below.

[0058] Example Manufacturing example: base material layer + conductive layer + adhesive layer

[0059] A 0.8 wt% aqueous solution of a mixture of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS) and water-dispersible polyurethane (PEDOT-PSS:PU = 1:9 wt) was crosslinked with various concentrations of aziridine (0 wt%, 0.05 wt%, 0.09 wt%, 0.1 wt%, 0.3 wt%, 0.5 wt%, and 0.6 wt%) at room temperature and pressure for 45 min. The crosslinked products were gravure coated onto a 25-100 μm thick polyethylene terephthalate substrate and dried at 60 °C for 20 s, 80 °C for 20 s, and 100 °C for 20 s with 35 Hz hot air to form conductive layers with thicknesses of 0.03-3 μm.

[0060] 27g of polydimethylsiloxane (weight average molecular weight approximately 650,000) of formula 1 containing vinyl groups at both ends with a content of 0.2mmol / g and 2.7g of methylhydrosiloxane-dimethylsiloxane copolymer (weight average molecular weight approximately 2,500) of formula 2 having a Si-H content of 4mmol / g were mixed with 70g of toluene, and 0.005g of platinum was added as a catalyst to react at room temperature and atmospheric pressure for 200 minutes. The product was slot die coated onto the conductive layer and dried with hot air at 60°C for 50 seconds, 110°C for 50 seconds, and 150°C for 50 seconds at 35Hz to form an adhesive layer with a thickness of 15-50μm.

[0061] Test Example 1: Change in surface resistance due to conductive layer thickness

[0062] When the molar ratio of Si-H / vinyl group was 2.2 and the applied voltage was 1 kV, the surface resistance of Examples 1 to 8 and Comparative Examples 1 and 2 was measured using a surface resistance measuring device (Mitsubishi Chemical, Japan). The results are shown in Table 1.

[0063] [Table 1]

[0064] As a result of the test, it was confirmed that when the thickness of the conductive layer is 0.03 to 0.3 μm, the surface resistance value falls within the target range of 1×10 11 to 1×10 13 Ω / sq.

[0065] Test Example 2: Changes in surface resistance and lamination time depending on adhesive layer thickness

[0066] When the molar ratio of Si-H / vinyl group was 2.2 and the applied voltage was 1 kV, the surface resistance of Examples 7 to 10 and Comparative Examples 3 to 6 was measured using a surface resistance measuring device (Mitsubishi Chemical, Japan), and the time it took for the semiconductor adhesive film 1 to be completely laminated onto the wafer W was measured. The results are shown in Table 2.

[0067] The wafer W was selected to be a 200 mm wafer. Referring to Figure 3, when laminating the film 1 onto the wafer W, pressure is applied to the center to bring it into contact with the wafer W. The time it takes for the semiconductor adhesive film 1 to be completely laminated onto the entire wafer W refers to the time that has elapsed since the film 1 came into contact with the wafer W as shown in Figure 3 until the film 1 is completely laminated onto the wafer W as shown in Figure 4. If the film 1 does not completely adhere to the wafer W as shown in Figure 5, it means that the entire wafer is not completely laminated.

[0068] [Table 2]

[0069] When a voltage of 1 kV is applied to the semiconductor adhesive film 1, the surface resistance is 1×10 11 to 1×10 13 Ω / sq. If the voltage is below this range, the dielectric loss increases and the wafer W to which the semiconductor adhesive film 1 is adhered may not be fixed to the electrostatic chuck. Conversely, if the voltage exceeds this range, the dielectric loss decreases, but the mobility of electrons decreases and the wafer W to which the semiconductor adhesive film 1 is adhered may not be fixed to the electrostatic chuck. At this time, when a voltage of 1 kV is applied, the surface resistance of the film 1 is examined depending on the thickness of the adhesive layer 30. In Comparative Examples 3 and 4, when the thickness of the adhesive layer 30 is less than 15 μm, the surface resistance is found to be less than 1×10 11 Ω / sq. Furthermore, in Comparative Examples 5 and 6, when the thickness of the adhesive layer 30 is more than 50 μm, the surface resistance is found to be greater than 1×10 13 Ω / sq. Therefore, when the adhesive layer 30 is formed to a thickness of 15 to 50 μm, the surface resistance can be formed to be 1×10 11 to 1×10 13 Ω / sq when a voltage of 1 kV is applied to the semiconductor adhesive film 1. The time required for laminating the semiconductor adhesive film 1 to the entire wafer W is preferably 1 second or less. The speed at which the semiconductor adhesive film 1 is laminated to the wafer W depends on the wetting performance, and the thicker the adhesive layer 30, the higher the wetting performance. Table 2 shows that the thicker the adhesive layer 30, the faster the lamination time. In Comparative Examples 3 and 4, when the adhesive layer is formed to a thickness of less than 15 μm, the lamination time exceeds 1 second. Furthermore, if the wetting performance is weak and the lamination time exceeds 1 second, the film 1 may float on the wafer W, as shown in FIG. 5, and there is a high possibility of fine bubbles occurring. Therefore, in order to achieve a lamination time of 1 second or less, the adhesive layer 30 is formed to a thickness of 15 μm or more.

[0070] Test Example 3: Burr and bubble occurrence depending on adhesive layer thickness

[0071] The adhesive film 1 for semiconductors is used by cutting a roll of film. At this time, if the thickness of the adhesive layer 30 exceeds 50 μm, burrs may be generated when cutting the film 1, causing contamination between the wafer W and the film 1. In addition, if the ratio of the thickness of the adhesive layer 30 to the total thickness of the adhesive film 1 for semiconductors exceeds 50%, the stiffness of the film 1 is weak, increasing the possibility of bubbles being generated when the film 1 is adhered to the wafer W. In addition, as mentioned in Test Example 2, if the thickness of the adhesive layer 30 is formed less than 15 μm, the wetting performance is weakened, slowing down the overall lamination speed between the film 1 and the wafer W, and increasing the possibility of bubbles being generated.

[0072] The burr test was performed using a pencil hardness test method. Using the pencil hardness test equipment shown in Figure 6, the semiconductor adhesive film 1 to be measured was placed on a glass plate. Then, the pressure applied to the pencil, which has a weight of 750g and a pencil hardness of 7H, was maintained constant. The pencil was moved at a speed of 120mm / s. At this time, it was measured whether burrs were generated on the film 1.

[0073] In the burr test, when film 1 was observed under an optical microscope, if no burrs were found in the area where film 1 was scratched with a pencil, as in Figure 7, it was rated as "AA." If burrs were found only in a part of film 1, but the burr length was 20 μm or less, as in Figure 8, it was rated as "A." If burrs were found only in a part of film 1, but the burr length was 20-40 μm, as in Figure 8, it was rated as "B." If burrs were found all over film 1 and the burr length was over 40 μm, as in Figure 9, it was rated as "C."

[0074] The evaluation of whether bubbles were generated was carried out by using tape mounting equipment (DT-MWM 1230A, Dynatec) to press the wafer W through a roll-shaped bar at a temperature of 65°C and checking for the presence of bubbles between the wafer W and the semiconductor adhesive film 1. If the film 1 was well laminated over the entire wafer W without any bubbles, it was evaluated as "good", and if bubbles were present, it was evaluated as "poor".

[0075] [Table 3]

[0076] From Table 3, it can be seen that when the thickness of the adhesive layer 30 exceeds 50 μm (Comparative Example 9), the burr characteristics are Grade C. When the thickness of the adhesive layer 30 is 50 μm (Comparative Example 7), the burr characteristics are Grade B. When the thickness of the adhesive layer 30 is 35 μm (Comparative Example 8), the burr characteristics are Grade A. When the thickness of the adhesive layer 30 is 18 to 25 μm (Examples 11 to 14), the burr characteristics are Grade AA. Furthermore, when the thickness ratio of the adhesive layer 30 to the film 1 exceeds 50% (Comparative Examples 7, 8, and 9), bubbles are generated between the film 1 and the wafer W. In Comparative Example 10, the adhesive layer is formed to a thickness of less than 15 μm, resulting in poor wetting performance and the generation of voids.

[0077] [Table 4]

[0078] From Table 4, it can be seen that when the thickness of the adhesive layer 30 exceeds 50 μm (Comparative Example 13), the burr characteristics are Grade C. When the thickness of the adhesive layer 30 is 50 μm (Comparative Example 11), the burr characteristics are Grade B. When the thickness of the adhesive layer 30 is 35 μm (Comparative Example 12), the burr characteristics are Grade A. When the thickness of the adhesive layer 30 is 18 to 25 μm (Examples 15 to 18), the burr characteristics are Grade AA. From Table 4, it can be seen that when the thickness of the adhesive layer 30 exceeds 50 μm (Comparative Example 13), burrs are generated. Furthermore, when the thickness ratio of the adhesive layer 30 to the film 1 exceeds 50% (Comparative Examples 11, 12, and 13), bubbles are generated between the film 1 and the wafer W. In Comparative Example 14, the adhesive layer is formed to a thickness of less than 15 μm, resulting in poor wetting performance and voids.

[0079] [Table 5]

[0080] From Table 5, it can be seen that when the thickness of the adhesive layer 30 exceeds 50 μm (Comparative Example 16), the burr characteristics are Grade C. When the thickness of the adhesive layer 30 is 50 μm (Comparative Example 15), the burr characteristics are Grade B. When the thickness of the adhesive layer 30 is 35 μm (Comparative Example 19), the burr characteristics are Grade A. When the thickness of the adhesive layer 30 is 18 to 25 μm (Examples 19 to 23), the burr characteristics are Grade AA.

[0081] From Table 5, it can be seen that burrs occur when the thickness of the adhesive layer 30 exceeds 50 μm (Comparative Example 16). Also, when the thickness ratio of the adhesive layer 30 to the film 1 exceeds 50% (Comparative Examples 15 and 16), bubbles occur between the film 1 and the wafer W. In Comparative Example 17, the adhesive layer is formed to a thickness of less than 15 μm, which weakens wetting performance and causes voids.

[0082] Summarizing Tables 3 to 5, when the thickness of the adhesive layer 30 is formed to 15 to 50 μm, burr generation is suppressed and the burr characteristics are maintained at a grade of “B” or higher, and bubble generation is suppressed due to improved wetting performance.

[0083] In addition, when the thickness of the adhesive layer 30 is formed to be 15 to 35 μm, burr generation is suppressed and the burr characteristics are maintained at an "A" grade or higher, and bubble generation is suppressed due to improved wetting performance.

[0084] In addition, when the thickness of the adhesive layer 30 is formed to 15 to 25 μm, burr generation is suppressed and the burr characteristics are maintained at "AA" grade or above, and bubble generation is suppressed due to improved wetting performance.

[0085] In addition, when the thickness ratio of the adhesive layer 30 to the total thickness of the film 1 is formed to be 50% or less, the stiffness of the base layer 10 has a greater effect on the film 1 than the flexibility of the adhesive layer 30, and the stiffness of the film is maintained above a certain level, so no voids occur during lamination between the film 1 and the wafer W.

[0086] Test Example 4: Burr occurrence due to adhesive layer material

[0087] The burr test was performed using a pencil hardness test method. Using pencil hardness test equipment as shown in Figure 6, the semiconductor adhesive film 1 to be measured was placed on a glass plate. A constant pressure was applied to the pencil, which had a weight of 750 g and a pencil hardness of 7H. The pencil was moved at a speed of 120 mm / s. At this time, it was measured whether burrs were generated on the film 1. The film 1 had a base layer 10 with a thickness of 50 μm, a conductive layer 20 with a thickness of 3 μm, and an adhesive layer 30 with a thickness of 20 μm. When the film 1 was observed under an optical microscope during the burr test, it was confirmed whether burrs were generated, as shown in Figures 10 to 12.

[0088] [Table 6]

[0089] Fig. 10 is a photograph showing that no burrs were generated on film 1 when the adhesive layer was made of a silicone-based material in Example 24. Fig. 11 is a photograph showing that burrs were generated on film 1 when the adhesive layer was made of an acrylic-based material in Comparative Example 18. Fig. 12 is a photograph showing that burrs were generated on film 1 when the adhesive layer was made of a urethane-based material in Comparative Example 19. This shows that when the adhesive layer 30 is made of a silicone-based material, excellent burr prevention properties are achieved.

[0090] The present invention has been described in detail above through specific examples, but these are for the purpose of specifically explaining the present invention, and the present invention is not limited thereto. It is clear that modifications and improvements can be made by a person having ordinary knowledge in the art within the technical spirit of the present invention. Any mere modifications or variations of the present invention are within the scope of the present invention, and the specific scope of protection of the present invention will be defined by the appended claims.

Claims

1. Base material layer; a conductive layer formed on the substrate layer; and An adhesive film for semiconductors comprising: an adhesive layer formed on the conductive layer; The semiconductor adhesive film has a surface resistance in the range of 1×10 11 to 1×10 13 Ω / sq when a voltage of 1 kV is applied, The thickness of the adhesive layer is 15 to 50 μm. A semiconductor adhesive film characterized by:

2. The thickness of the adhesive layer is formed to be 50% or less of the thickness of the semiconductor adhesive film. The semiconductor adhesive film according to claim 1.

3. The conductive layer is formed to a thickness of 0.03 to 3 μm. The semiconductor adhesive film according to claim 2 .

4. The adhesive layer further includes a release film formed on the adhesive layer. The semiconductor adhesive film according to claim 1.

5. The center of the semiconductor adhesive film is pressed, and the adhesive layer is laminated onto the entire semiconductor wafer within 1.0 seconds from the time when the semiconductor wafer and the adhesive layer come into contact. The semiconductor adhesive film according to claim 1.

6. The adhesive layer includes at least one compound selected from the group consisting of a rubber-based compound, an acrylic-based compound, a silicon-based compound, and a urethane-based compound. The semiconductor adhesive film according to claim 5 .

7. The thickness of the adhesive layer is 15 to 35 μm or 15 to 25 μm. The semiconductor adhesive film according to claim 6.

8. The thickness of the substrate layer is 25 to 100 μm, 33 to 70 μm, or 38 to 50 μm. The semiconductor adhesive film according to claim 1.

9. The thicknesses of the base layer (S), the conductive layer (C) and the adhesive layer (A) are determined based on the following formulas 1 and 2: [Equation 1] A / (S+C+A)≦0.5 [Equation 2] C + A ≦ S and The semiconductor adhesive film according to claim 1.

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