Silicon-containing coating compositions and their applications

JP2026508839APending Publication Date: 2026-03-13PIBOND OY
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-02-27
Publication Date
2026-03-13

AI Technical Summary

Technical Problem

Existing materials for anti-reflective coatings in microelectronics and optoelectronics fail to simultaneously achieve optimal refractive index, absorption coefficient, and mechanical properties, leading to errors in pattern formation due to optical interference and substrate topography variations during the manufacturing of small feature sizes in semiconductor devices.

Method used

A poly(organosiloxane) or polysilsesquioxane resin composition with novel silicon precursors containing aromatic structures, such as fused rings with sulfur and nitrogen heterocycles, is used to adjust refractive index and absorption coefficient, enhancing optical and mechanical properties.

Benefits of technology

The resin composition achieves high refractive index, limited absorption, and improved mechanical properties, reducing reflection and enhancing pattern formation efficiency in semiconductor manufacturing processes.

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Abstract

The present invention provides a novel functional poly(organosiloxane) resin composition, a method for producing a novel poly(organosiloxane) coating composition, and a coated substrate having improved properties suitable for optical applications, etc., in order to achieve predetermined values ​​of refractive index, absorption coefficient, and other properties. In certain embodiments, the substituents include a silicon precursor having a butterfly-shaped condensed aromatic structure, wherein the aromatic ring is linked by intermediate N and S atoms, resulting in a half-plane with a dihedral angle of less than 165°, and the bent thiazine, particularly the 1,4-thiazine ring, has a CSC angle of less than 110°. In one embodiment, the silicon precursor has substituents including optionally substituted thiazine rings.
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Citation Information

Patent Citations

  • Antireflective hardmask and uses thereof

    US20050042538A1

  • Hardmask compositions for resist underlayer film and method for producing semiconductor integrated circuit device using the same

    US20070148586A1

  • Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same

    US20100167203A1