Multi-wavelength high-temperature meter for chamber monitoring

Abstract

This disclosure relates to a method, system, and apparatus for monitoring the temperature at multiple locations within a substrate processing chamber. The system for processing a substrate includes a process chamber with a processing space, a first window around the first processing space, a substrate support within the processing space, and a first multi-wavelength pyrometer configured to measure a first temperature at a first location adjacent to the first window and a second temperature at a second location adjacent to the substrate support.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to methods and apparatuses for monitoring the temperature at multiple locations within a process chamber. More specifically, the present application relates to a method for non-contact monitoring of the temperature at multiple locations within a semiconductor process chamber.

Background Art

[0002]

[0002] Semiconductor substrates are processed for various applications, including the manufacture of integrated devices and micro-devices. During processing, the substrate is placed on a substrate support within a process chamber. The substrate support is supported by a support shaft that is rotatable about a central axis. By accurately controlling heating sources such as a plurality of heating lamps disposed below and above the substrate, the substrate can be heated within very strict tolerance ranges. The temperature of the substrate can affect the uniformity of the material deposited on the substrate.

[0003]

[0003] Over time, the accuracy and precision of heating within the process chamber decrease due to aging of the heating sources and accumulation of films on surfaces within the process chamber (e.g., windows). If the processing efficiency decreases over time, accumulation may be suspected. The process chamber may be manually inspected to identify accumulations on various surfaces in response to a decrease in efficiency or during preventive maintenance. Manual inspection of the process chamber increases the downtime of the process chamber. Extended downtime reduces throughput and increases ownership costs. In inspection methods, substrates or additional equipment that are removed from the process chamber after inspection are also typically used. The additional test substrates and equipment further increase the ownership costs.

[0004]

[0004] Therefore, there is a need for improved apparatuses and methods for monitoring the temperature within a process chamber.

Summary of the Invention

[0005]

[0005] The present disclosure generally relates to a method and apparatus for monitoring the temperature at multiple locations within a process chamber.

[0006]

[0006] In one or more embodiments, a system for processing a substrate is provided, which includes a process chamber having a processing space, a first window around a first part of the processing space, a substrate support within the processing space, and a first multi-wavelength pyrometer configured to measure a first temperature at a first location near the first window and a second temperature at a second location near the substrate support.

[0007]

[0007] In other embodiments, a method is provided for monitoring a process chamber, which includes: measuring a first temperature at a first location in the process chamber using a first multi-wavelength pyrometer, the first location being close to a first window in the periphery of the processing space of the process chamber; measuring a second temperature at a second location in the process chamber using a first multi-wavelength pyrometer simultaneously with measuring the first temperature, the second location being close to a substrate support in the processing space; measuring a third temperature at the first location using a first multi-wavelength pyrometer after measuring the first temperature; measuring a fourth temperature at a second location using a first multi-wavelength pyrometer simultaneously with measuring the third temperature; evaluating the operating state of the process chamber based on the first, second, third, and fourth temperatures; and performing at least one of the actions that cause a change in the environment of the process chamber and actions that generate an alert based on the evaluation of the operating state.

[0008]

[0008] In some embodiments, a system is provided for processing a substrate, the system comprising: a process chamber having a processing space; a first window around a first part of the processing space; a second window around a second part of the processing space; a substrate support within the processing space; a first multi-wavelength pyrometer configured to measure a first temperature at a first location adjacent to the first window and a second temperature at a second location adjacent to the substrate support; a second multi-wavelength pyrometer configured to measure a third temperature at a third location adjacent to the first window and a fourth temperature at a fourth location adjacent to the substrate support; a third multi-wavelength pyrometer configured to measure a fifth temperature at a fifth location adjacent to the second window and a sixth temperature at a sixth location adjacent to the substrate support, wherein the first window comprises quartz, the second window comprises quartz, the substrate support comprises silicon, the first, third, and fifth locations are different from each other, and the second, fourth, and sixth locations are different from each other.

[0009]

[0009] To allow for a more detailed understanding of the above-mentioned features of the Disclosure, a more specific description of the Disclosure, which has been briefly summarized above, can be given by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and are therefore not intended to limit the scope of the Disclosure, as other similarly effective embodiments may be permitted. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic diagram of a deposition chamber according to one or more embodiments of the present disclosure. [Figure 2] A simplified, enlarged view of the deposition chamber shown in Figure 1. [Figure 3] This is a schematic cross-sectional view showing a portion of a substrate support according to one or more embodiments. [Figure 4] This graph shows an exemplary temperature curve. [Figure 5] This is a block diagram of a method for monitoring a process chamber using a multi-wavelength high-temperature meter, according to one or more embodiments. [Modes for carrying out the invention]

[0011]

[0015] For ease of understanding, the same reference numerals are used whenever possible to indicate identical elements common to the figures. It is intended that elements and features of one embodiment may be usefully incorporated into other embodiments without further enumeration.

[0012]

[0016] This disclosure relates generally to a method and apparatus for monitoring the temperature at multiple locations within a process chamber. More specifically, the method is intended for a multi-wavelength high-temperature measurement method for monitoring and / or controlling a semiconductor process chamber used for epitaxial deposition, but its use in other chambers is also envisioned. The method uses a multi-wavelength pyrometer to perform simultaneous temperature measurements at at least two different locations. By using a multi-wavelength pyrometer to determine at least two temperature measurements, the effects of variables such as window coating formation, substrate support degradation, and pyrometer drift can be mitigated or eliminated, thereby improving the efficiency and / or accuracy of the temperature measurement. For example, the efficiency and / or accuracy of the temperature measurement can be improved by calculating the difference between two pyrometer measurements at different wavelengths and identifying the direction of change.

[0013]

[0017] In some embodiments, a multi-wavelength pyrometer can simultaneously measure two different wavelengths (or wavelength ranges). Instead of determining temperature by measuring the intensity of emitted infrared energy, as in conventional methods, the multi-wavelength pyrometer method can measure infrared energy at two different wavelengths and determine the ratio of the two measurements. This ratio is then used to determine the temperature. As the ratio changes, the temperature also changes. This can be advantageous, for example, when residue accumulates in the window between the temperature measurement location and the pyrometer. Since the interference from the residue affects both wavelengths equally, it effectively cancels out. Even as the window becomes increasingly dirty, the multi-wavelength pyrometer can continue to accurately measure temperature. It should be noted that any two measurements from a series of measurements taken by the multi-wavelength pyrometer can be selected to determine the ratio.

[0014]

[0018] Figure 1 is a schematic diagram of one type of process chamber 100 according to one or more embodiments of the present disclosure. The process chamber 100 is a semiconductor process chamber and may be a deposition chamber. The process chamber 100 described herein is used to grow an epitaxial film on a substrate (not shown). The process chamber 100 generates a crossflow of precursor across the upper surface of the substrate.

[0015]

[0019] The process chamber 100 comprises an upper body 156, a lower body 148 positioned below the upper body 156, and a flow module 112 positioned between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Inside the chamber body is a substrate support 106 having an upper surface 171 and a lower surface 172. The substrate support 106 may be formed from a silicon material (e.g., graphite coated with silicon carbide). Also inside the chamber body are an upper window 108 (e.g., a dome-shaped window), a lower window 110 (e.g., an inverted dome-shaped window), a plurality of upper lamps 141, and a plurality of lower lamps 143. The upper window 108 may have an upper surface 101 and a lower surface 102. The upper window 108 and the lower window 110 are formed from a material that can absorb radiation of a specific wavelength and transmit radiation of other wavelengths. For example, the upper window 108 and the lower window 110 may be formed of quartz, which, depending on the selected quartz material, is absorbent in the wavelength range above about 4800 nm and transmittance in the wavelength range of about 150 nm to about 4800 nm at typical chamber operating temperatures and pressures. In some embodiments, the upper window 108 and the lower window 110 may be formed of a material that is transmittance in a specific wavelength range that the substrate support 106 can absorb (for example, in the wavelength range of about 150 nm to about 15,000 nm at typical chamber operating temperatures and pressures).

[0016]

[0020] A substrate support 106 is positioned between the upper window 108 and the lower window 110. Multiple upper lamps 141 are positioned between the upper window 108 and the lid 154. Two multi-wavelength pyrometers 153, 155 are positioned on the lid 154 for measuring one or more temperatures within the process chamber 100. Multiple lower lamps 143 are positioned between the lower window 110 and the floor 152. A multi-wavelength pyrometer 149 is positioned through the floor 152 for measuring one or more temperatures within the process chamber 100. In some embodiments, the process chamber 100 includes only one of the three illustrated multi-wavelength pyrometers 149, 153, 155. In some embodiments, the process chamber 100 includes any two of the three illustrated multi-wavelength pyrometers 149, 153, 155. In some embodiments, the process chamber 100 may include additional multi-wavelength pyrometers in addition to the illustrated multi-wavelength pyrometers 149, 153, 155. In some embodiments, the process chamber 100 may include multi-wavelength pyrometers positioned and / or oriented differently from the illustrated multi-wavelength pyrometers 149, 153, and 155.

[0017]

[0021] A processing space 136 is formed between the upper window 108 and the lower window 110. A substrate support 106 is positioned within the processing space 136. The substrate support 106 is attached to a shaft 118. The shaft is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing space 136. The motion assembly 121 includes a rotary actuator 122 that rotates the shaft 118 and / or the substrate support 106 around the longitudinal axis A of the process chamber 100. The motion assembly 121 further includes a vertical actuator 124 that raises and lowers the substrate support 106 in the Z direction. The motion assembly includes a tilt adjustment device 126 used to adjust the planar orientation of the substrate support 106 and a lateral adjustment device 128 used to adjust the left-right position of the shaft 118 and the substrate support 106 within the processing space 136.

[0018]

[0022] The substrate support 106 may be provided with lift pin holes 107. The lift pin holes 107 are sized to accommodate lift pins 132 for lifting the substrate from the substrate support 106 before or after the deposition process. When the substrate support 106 is lowered from the processing position to the transport position, the lift pins 132 can be placed on a lift pin stopper 134.

[0019]

[0023] A mass sensor 160 is optionally coupled to the shaft 118 of the substrate support 106. The mass sensor 160 is configured to measure the mass and / or weight of the substrate support 106 and / or the thickness of the coating on the substrate support 106. The mass sensor 160 may be a strain gauge or a piezoelectric sensor. The strain gauge may be an optical strain gauge or an electrical strain gauge. The mass sensor 160 is positioned below the shaft 118, and at least a portion of the mass of the substrate support 106 is supported by the mass sensor 160. The mass sensor 160 is positioned below a bearing, such as a ball bearing assembly. The ball bearing assembly is configured to support at least a portion of the weight of the substrate support 106 and is positioned between the mass sensor 160 and the shaft 118 of the substrate support 106.

[0020]

[0024] The flow module 112 includes a plurality of process gas inlets 114, a plurality of purge gas inlets 164, and one or more exhaust gas outlets 116. The plurality of process gas inlets 114 and the plurality of purge gas inlets 164 are located on the opposite side of the one or more exhaust gas outlets 116 in the flow module 112. One or more flow guides 146 are located below the plurality of process gas inlets 114 and the one or more exhaust gas outlets 116. The flow guides 146 are located above the purge gas inlets 164. A liner 163 is located on the inner surface of the flow module 112 to protect the flow module 112 from reactive gases used during the deposition process. The process gas inlets 114 and purge gas inlets 164 are arranged to allow gas to flow parallel to the upper surface of a substrate (not shown) located in the processing space 136. The process gas inlets 114 are fluidically connected to a process gas source 151. The purge gas inlets 164 are fluidically connected to a purge gas source 162. One or more exhaust gas outlets 116 are fluidly connected to an exhaust pump 157. Each of the process gas source 151 and purge gas source 162 can be configured to supply one or more precursors or process gases into the processing space 136.

[0021]

[0025] As shown in the figure, the controller 120 communicates with the process chamber 100 and is used to control a process as described herein. The controller 120 includes a central processing unit (CPU) 159, a memory device 135, and support circuitry 158. The controller 120 can control the process chamber 100 directly or via another computer or controller (not shown) associated with a specific support system component. The controller 120 may be one of any form of general-purpose computer processor that can be used in an industrial environment to control various chambers and subprocessors. The memory 135, i.e., computer-readable medium, may be one or more readily available memories such as random access memory (RAM), read-only memory (ROM), floppy disks, hard disks, flash drives, or any other form of local or remote digital storage. The support circuitry 158 is coupled to the CPU 159 to support the processor in a conventional manner. The support circuitry 158 includes cache, power supply, clock circuitry, input / output circuitry, and subsystems. The processing steps may be stored in memory 135 as software routines that are executed or called to transform the controller 120 into a purpose-specific controller for controlling the operation of the process chamber 100. The controller 120 can be configured to perform any of the methods described herein. The controller 120 may be adapted to monitor, set, adjust, and / or change the input power (e.g., measured in voltage) supplied to the lamps 141 and 143 to control the radial distribution of radiated energy. Similarly, the controller 120 may change the setpoint of the input power supplied to the lamps 141 and 143. The controller 120 may be adapted to generate alerts (warnings) based on data collected by various components of the process chamber 100.

[0022]

[0026] FIG. 2 shows a simplified enlarged portion of the schematic diagram of the process chamber 100 of FIG. 1. As described above, the process chamber 100 includes an upper window 108 and a lower window 110. A processing space 136 is formed between the upper window 108 and the lower window 110. A substrate support 106 is disposed within the processing space 136. The substrate support 106 has an upper surface 171 and a lower surface 172.

[0023]

[0027] FIG. 2 also shows a plurality of temperature measurement locations 249-Q, 249-S, 253-Q, 253-S, 255-Q, 255-S. For example, in one embodiment, the multi-wavelength pyrometer 149 (FIG. 1) can be adapted to measure the temperatures at location 249-Q (e.g., the peripheral region of the lower window 110) and location 249-S (e.g., the peripheral region of the lower surface 172 of the substrate support 106). Similarly, in one embodiment, the multi-wavelength pyrometer 153 (FIG. 1) can be adapted to measure the temperatures at location 253-Q (e.g., the peripheral region of the upper window 108) and location 253-S (e.g., the peripheral region of the upper surface 171 of the substrate support 106). Similarly, in one embodiment, the multi-wavelength pyrometer 155 (FIG. 1) can be adapted to measure the temperatures at location 255-Q (e.g., the central region of the upper window 108) and location 255-S (e.g., the central region of the upper surface 171 of the substrate support 106). It should be noted that each of the multi-wavelength pyrometers 149, 153, 155 can be arranged at positions and / or orientations different from those shown in FIG. 1 while still being able to measure the temperatures of both a location in one of the windows (e.g., the upper window 108 and the lower window 110) and a location in one of the surfaces (e.g., the upper surface 171 and the lower surface 172) of the substrate support 106. Each multi-wavelength pyrometer 149, 153, 155 can be adapted to detect radiation in two or more different wavelength ranges. For example, the two wavelength ranges can be selected to be (1) the wavelength range absorbed by the upper window 108 and the lower window 110 (e.g., from about 4,800 nm to about 5,200 nm), and (2) the wavelength range absorbed by the substrate support 106 (e.g., from about 3,300 nm to about 3,500 nm).

[0024]

[0028] FIG. 3 shows a simplified schematic cross-sectional view of a portion of the process chamber 100 according to one or more embodiments. As shown, temperature measurements at each of the locations 249-Q, 253-Q, and 255-Q can be performed using one or more radiation beams. For example, in some embodiments, each of the multi-wavelength pyrometers 149, 153, 155 can be adapted to emit one or more radiation beams and receive one or more reflected radiation beams. In FIG. 3, the radiation beam 302 can be emitted by the multi-wavelength pyrometer 155. At the upper surface 101 of the upper window 108, a portion of the radiation beam 302 can be reflected as the radiation beam 306. Another portion of the radiation beam 302 can be transmitted as the radiation beam 304. Note that the reflected portion and the transmitted portion can have different wavelengths depending on the material and temperature of the upper window 108. For example, the wavelength of the reflected radiation beam 306 can be in the range of about 4,800 nm to about 5,200 nm. The multi-wavelength pyrometer 155 is configured to receive the reflected radiation beam 306 and measure the intensity of the radiation beam 306. For example, the multi-wavelength pyrometer 155 can be configured to receive and measure radiation at least in the wavelength range of about 4,800 nm to about 5,200 nm. At the upper surface 171 of the substrate support 106, a portion of the radiation beam 304 can be reflected as the radiation beam 308. Further, a portion of the radiation beam 308 can pass through the upper window 108 again to generate the radiation beam 309. Understand that the reflected portion (e.g., the radiation beam 308) and the reflected-transmitted portion (e.g., the radiation beam 309) can have specific wavelengths depending on the materials and temperatures of the substrate support 106 and the upper window 108. For example, the wavelength of the radiation beam 309 can be in the range of about 3,300 nm to about 3,500 nm. The multi-wavelength pyrometer 155 is configured to receive the transmitted-reflected-transmitted radiation beam 309 and measure the intensity of the radiation beam 309. For example, the multi-wavelength pyrometer 155 can be configured to receive and measure radiation at least in the wavelength range of about 3,300 nm to about 3,500 nm.

[0025]

[0029] For example, the upper window 108 and the lower window 110 may be formed of quartz, which, depending on the selected quartz material, is absorbent in the wavelength range above about 4800 nm and transmittance in the wavelength range of about 150 nm to about 4800 nm at typical chamber operating temperatures and pressures. In some embodiments, the upper window 108 and the lower window 110 may be formed of a material that is transmittance in a specific wavelength range that the substrate support 106 can absorb (for example, in the wavelength range of about 150 nm to about 15,000 nm at typical chamber operating temperatures and pressures).

[0026]

[0030] In some embodiments, one or more of the multi-wavelength pyrometers 149, 153, and 155 can simultaneously measure more than two different wavelengths (or wavelength ranges). For example, one or more of the multi-wavelength pyrometers 149, 153, and 155 can simultaneously measure radiation in the wavelength ranges of approximately 2,650 nm to approximately 2,750 nm, approximately 3,300 nm to approximately 3,500 nm, and approximately 4,800 nm to approximately 5,200 nm.

[0027]

[0031] Temperature measurements obtained by the multi-wavelength pyrometers 149, 153, and 155, respectively, can be used to monitor the temperature inside the process chamber 100. Furthermore, the temperature measurements can be used to evaluate the operating state of the process chamber. For example, the difference in temperature measurements can be used to detect reactant coatings on the upper window 108 and / or the lower window 110. Such coating detection can be obtained without opening the process chamber 100 for process and / or cleaning optimization. For example, Figure 4 shows examples of temperature changes that may be detected. Line 451 is an example of temperature measurement of a substrate support in a process chamber with a clean upper window. Line 452 is an example of temperature measurement of a substrate support in a process chamber with a clean upper window. The temperature change is shown by line 453. Line 461 is an example of temperature measurement of a clean upper window. Line 462 is an example of temperature measurement of an upper window while it is being coated. The temperature change is shown by line 463.

[0028]

[0032] In some embodiments, the controller 120 can also receive temperature readings from any of the multi-wavelength pyrometers 149, 153, and 155. The controller 120 can store one or more temperature readings. The controller 120 can compare any one temperature reading with any one or more other temperature readings. Based on the temperature readings and / or comparisons thereof, the controller 120 can evaluate the operating state of the process chamber 100. For example, a coated window may reduce the efficiency of the operating state. Based on the evaluation of the operating state, the controller can trigger changes in the environment of the process chamber. For example, the controller can adjust the input power to the lamps 141 and 143 to adjust the temperature of the processing space. The controller can issue alerts based on the evaluation of the operating state. For example, the controller 120 can notify the user that a coating reduction treatment is needed on the upper window 108 or the lower window 110.

[0029]

[0033] Figure 5 is a block diagram of a method 500 for monitoring a process chamber using a multi-wavelength pyrometer, according to one or more embodiments. The method 500 begins with operation 510, which includes measuring the temperature of a window (e.g., upper window 108, lower window 110) using a multi-wavelength pyrometer "P1" at a first time "T1". For example, the temperature may be measured in a location close to the window (e.g., the central area of ​​the window or the peripheral area of ​​the window).

[0030]

[0034] Simultaneously with operation 510 (for example, at time T1), method 500 proceeds to operation 520, which includes measuring the temperature of the substrate support (e.g., substrate support 106) using a multi-wavelength pyrometer P1. For example, the temperature may be measured in a location close to the substrate support (e.g., the central region of the substrate support or the peripheral region of the substrate support).

[0031]

[0035] Following operation 510, method 500 proceeds to operation 530, which includes measuring another temperature of the window at a later time "T2" using a multi-wavelength pyrometer P1. For example, the temperature may be measured at the same location as in operation 510.

[0032]

[0036] Simultaneously with operation 530 (for example, at time T2), method 500 proceeds to operation 540, which includes measuring another temperature of the substrate support using a multi-wavelength pyrometer P1. For example, the temperature may be measured at the same location as in operation 530.

[0033]

[0037] Following operation 530, method 500 proceeds to operation 550, which includes evaluating the operational state of the process chamber based on temperature measurements (e.g., window temperature measurements at T1 and T2, and substrate support temperature measurements at T1 and T2). For example, the temperature measurements may be stored and tracked as data. As a further example, the data may be analyzed and / or compared using mean, derivative, modeling, imaging, and / or other data analysis techniques.

[0034]

[0038] Based on the evaluation of the chamber's operating state in operation 550, method 500 proceeds to either (or both) operation 551 or operation 552. Operation 551 includes causing a change in the process chamber environment. For example, the environment can be changed by changing the input power supplied to at least one of the chamber's lamps. Operation 552 includes generating an alert. For example, the alert may indicate a window cleaning instruction. In some embodiments, which can be combined with other embodiments, the cleaning instruction instructs the operator (e.g., on a user interface display) to reduce the accumulation on the window. The window can be cleaned before the accumulation reduces processing efficiency. In some embodiments, which can be combined with other embodiments, the cleaning instruction provides the operator with an estimate of the accumulation's progress, such as the remaining effective chamber operating time before processing efficiency is significantly reduced. The operator can use such an estimate of the accumulation's progress to plan and perform appropriate maintenance activities to reduce machine downtime, lower cost and resource expenditures, and improve substrate throughput by the process chamber.

[0035]

[0039] The controller 120 may include one or more machine learning algorithms and / or artificial intelligence algorithms that can implement, adjust, and / or improve one or more of the algorithms, inputs, outputs, or variables described above. Furthermore, or alternatively, one or more machine learning algorithms and / or artificial intelligence algorithms may rank or prioritize certain aspects of the adjustments to the process chamber 100 and method 500 compared to other aspects of the process chamber 100 and method 500. One or more machine learning algorithms and / or artificial intelligence algorithms may take into account other changes in the processing system, such as hardware replacement or degradation. In another example, one or more machine learning algorithms and / or artificial intelligence algorithms may take into account upstream or downstream changes that may occur in the processing system due to changes in the variables of the process chamber 100 and method 500. For example, if variable "A" is adjusted to cause a change in process aspect "B", and such adjustment unintentionally causes a change in process aspect "C", one or more machine learning algorithms and / or artificial intelligence algorithms may take into account such a change in aspect "C". In such examples, one or more machine learning algorithms and / or artificial intelligence algorithms embody predictive aspects related to the implementation of process chamber 100 and method 500. These predictive aspects allow for proactive mitigation of unintended changes within the processing system. One or more machine learning algorithms and / or artificial intelligence algorithms can estimate optimized parameters, for example, using regression models (such as linear regression models) or clustering techniques. The algorithms can be unsupervised or supervised.

[0036]

[0040] Furthermore, embodiments of the present disclosure (such as the intermediate plate embodiment) are modular and can be used across a variety of processing (e.g., deposition) and / or cleaning operations, including a variety of operating parameters. Moreover, one or more aspects, features, components, operations, and / or properties of the various process kits described herein (such as the intermediate plate) can be selected, combined, and / or modified depending on the processing parameters (such as flow rate, temperature, pressure, and / or gas composition) used in the processing and / or cleaning operations.

[0037]

[0041] It is also envisioned that one or more embodiments disclosed herein may be combined. For example, one or more aspects, features, components, operations and / or properties of the process chamber 100, controller 120, windows 108, 110, pyrometers 149, 153, 155, and / or method 500 may be combined. Furthermore, it is envisioned that one or more embodiments disclosed herein will include some or all of the aforementioned advantages.

[0038]

[0042] Embodiments of this disclosure further relate to one or more of the following embodiments 1 to 20.

[0039]

[0043] 1. A system for processing a substrate, comprising: a process chamber having a processing space; a first window surrounding a first portion of the processing space; a substrate support within the processing space; and a first multi-wavelength pyrometer configured to measure a first temperature at a first location adjacent to the first window and a second temperature at a second location adjacent to the substrate support.

[0040]

[0044] 2. The system according to Embodiment 1, further comprising a second multi-wavelength pyrometer, the second multi-wavelength pyrometer configured to measure a third temperature at a third location adjacent to the first window and a fourth temperature at a fourth location adjacent to the substrate support, wherein the first location is different from the third location and the second location is different from the fourth location.

[0041]

[0045] 3. A system according to Embodiment 2, wherein the first location is adjacent to the central region of the first window, and the second location is adjacent to the central region of the substrate support.

[0042]

[0046] 4. A system according to Embodiment 2, wherein the second location is close to the upper surface of the substrate support, and the fourth location is close to the lower surface of the substrate support.

[0043]

[0047] 5. A system according to Embodiment 2, further comprising a second window around a second processing space and a third multi-wavelength pyrometer, wherein the third multi-wavelength pyrometer is configured to measure a fifth temperature at a fifth location adjacent to the second window and a sixth temperature at a sixth location adjacent to the substrate support, and the first, third, and fifth locations are different from each other, and the second, fourth, and sixth locations are different from each other.

[0044]

[0048] 6. A system according to one or more of Embodiments 1 to 5, wherein the first window contains quartz and the substrate support contains silicon.

[0045]

[0049] 7. A system according to one or more of Embodiments 1 to 6, wherein the first multi-wavelength pyrometer is configured to measure temperature in the wavelength ranges of approximately 2,650 nm to approximately 2,750 nm, approximately 3,300 nm to approximately 3,500 nm, and approximately 4,800 nm to approximately 5,200 nm.

[0046]

[0050] 8. A system according to one or more embodiments 1 to 7, further comprising a controller configured to receive temperature measurements from a first multi-wavelength pyrometer and to evaluate the operating state of a process chamber based on the temperature measurements.

[0047]

[0051] 9. The system according to Embodiment 8, further configured to store temperature measurements, compare the stored temperature measurements, and evaluate the operating state of the process chamber based on the comparison of the temperature measurements.

[0048]

[0052] 10. A system according to one or more embodiments 1 to 9, wherein the first multi-wavelength pyrometer is configured to measure a first temperature and a second temperature simultaneously.

[0049]

[0053] 11. A method for monitoring a process chamber, comprising: measuring a first temperature at a first location within the process chamber using a first multi-wavelength pyrometer, wherein the first location is close to a first window in the periphery of the processing space of the process chamber; measuring a second temperature at a second location within the process chamber using a first multi-wavelength pyrometer simultaneously with measuring the first temperature, wherein the second location is close to a substrate support in the processing space; measuring a third temperature at the first location using a first multi-wavelength pyrometer after measuring the first temperature; measuring a fourth temperature at a second location using a first multi-wavelength pyrometer simultaneously with measuring the third temperature; evaluating the operating state of the process chamber based on the first, second, third, and fourth temperatures; and performing at least one of an action that causes a change in the environment of the process chamber and an action that generates an alert based on the evaluation of the operating state.

[0050]

[0054] 12. A method according to Embodiment 11, wherein evaluating the operating state includes comparing at least two of the first, second, third, and fourth temperatures.

[0051]

[0055] 13. A method according to Embodiment 11 or 12, which involves adjusting the input power to one or more lamps in a process chamber to cause a change in the environment.

[0052]

[0056] 14. A method according to any one of embodiments 11 to 13, wherein generating an alert includes notifying the user that a coating mitigation measure is required for the first window.

[0053]

[0057] 15. A method according to any one of embodiments 11 to 14, wherein the first multi-wavelength pyrometer is configured to measure temperature in the wavelength ranges of approximately 3,300 nm to approximately 3,500 nm and approximately 4,800 nm to approximately 5,200 nm.

[0054]

[0058] 16. A method according to any one of embodiments 11 to 15, further comprising: measuring a fifth temperature at a third location in a process chamber using a second multi-wavelength pyrometer, the third location being close to a first window; measuring a sixth temperature at a fourth location in a process chamber using a second multi-wavelength pyrometer simultaneously with measuring the fifth temperature, the fourth location being close to a substrate support; measuring a seventh temperature at the third location using a second multi-wavelength pyrometer after measuring the fifth temperature; and measuring an eighth temperature at the fourth location using a second multi-wavelength pyrometer simultaneously with measuring the fifth temperature, wherein the first location is different from the third location, the second location is different from the fourth location, and the evaluation of the operating state is further based on the fifth temperature, the sixth temperature, the seventh temperature, and the eighth temperature.

[0055]

[0059] 17. A method according to Embodiment 16, wherein the first location is adjacent to the central region of the first window, and the second location is adjacent to the central region of the substrate support.

[0056]

[0060] 18. The method according to Embodiment 16, wherein the second location is close to the upper surface of the substrate support and the fourth location is close to the lower surface of the substrate support.

[0057]

[0061] 19. A method according to Embodiment 16, further comprising: measuring a ninth temperature at a fifth location in a process chamber using a third multi-wavelength pyrometer, the fifth location being close to a second window in the second perimeter of the processing space; measuring a tenth temperature at a sixth location in the process chamber using a third multi-wavelength pyrometer simultaneously with measuring the ninth temperature, the sixth location being close to a substrate support; measuring an eleventh temperature at the fifth location using a third multi-wavelength pyrometer after measuring the ninth temperature; and measuring a twelfth temperature at the sixth location using a third multi-wavelength pyrometer simultaneously with measuring the eleventh temperature, wherein the first, third, and fifth locations are different from each other, and the second, fourth, and sixth locations are different from each other, and the evaluation of the operating state is further based on the ninth, tenth, eleventh, and twelfth temperatures.

[0058]

[0062] 20. A system for processing a substrate, comprising: a process chamber having a processing space; a first window surrounding a first processing space; a second window surrounding a second processing space; a substrate support within the processing space; a first multi-wavelength pyrometer configured to measure a first temperature at a first location adjacent to the first window and a second temperature at a second location adjacent to the substrate support; a second multi-wavelength pyrometer configured to measure a third temperature at a third location adjacent to the first window and a fourth temperature at a fourth location adjacent to the substrate support; and a third multi-wavelength pyrometer configured to measure a fifth temperature at a fifth location adjacent to the second window and a sixth temperature at a sixth location adjacent to the substrate support, wherein the first window contains quartz, the second window contains quartz, the substrate support contains silicon, the first, third, and fifth locations are distinct from each other, and the second, fourth, and sixth locations are distinct from each other.

[0059]

[0063] The foregoing relates to embodiments of the present disclosure, but other embodiments and further embodiments may be conceived without departing from their basic scope, the scope of which will be determined by the appended claims. All documents described herein, including priority documents and / or test procedures, are incorporated herein by reference to the extent that they do not conflict with this disclosure. As is evident from the above general description and specific embodiments, the forms of the present disclosure are illustrated and described, but various modifications can be made without departing from the spirit and scope of the present disclosure. Thus, the present disclosure is not limited thereto. Similarly, in U.S. law, the term “comprising” is considered synonymous with the term “including.” Similarly, where a composition, element, or group of elements is followed by a “comprising” transition clause, it is understood that the same composition or group of elements may have a transition clause following that composition, element, or group of elements such as “essentially consisting of,” “consisting of,” “selected from a group consisting of,” or “is,” and vice versa. As used herein, the term “about” refers to a variation of + / - 10% from the nominal value. Please understand that any values ​​provided herein may include such variations.

[0060]

[0064] Certain embodiments and features are described using sets of upper and lower numerical limits. Note that unless otherwise specified, the numerical ranges described include both lower and upper limits. Note that unless otherwise specified, ranges are assumed to include any combination of any two values ​​(e.g., any combination of any lower and any upper limit, any combination of any two lower limits, and / or any combination of any two upper limits). Specific lower limits, upper limits, and ranges are described in one or more of the following claims.

Claims

1. A system for processing substrates, A process chamber equipped with a processing space, A first window surrounding the first processing space, The substrate support in the processing space, The first multi-wavelength high-temperature meter, The first temperature at a first location adjacent to the first window, and The second temperature at a second location adjacent to the substrate support, A first multi-wavelength pyrometer configured to measure, A system equipped with these features.

2. The system further comprises a second multi-wavelength pyrometer, the second multi-wavelength pyrometer being The third temperature at a third location adjacent to the first window, and The fourth temperature at a fourth location adjacent to the substrate support, It is configured to measure, Unlike the third location, the first location is The second location is different from the fourth location. The system according to claim 1.

3. The first location is close to the central region of the first window, The second location is adjacent to the central region of the substrate support. The system according to claim 2.

4. The second location is close to the upper surface of the substrate support, The fourth location is close to the lower surface of the substrate support. The system according to claim 2.

5. A second window surrounding the second processing space, A third multi-wavelength high-temperature meter, The third multi-wavelength high-temperature meter further comprises, The fifth temperature at a fifth location adjacent to the second window, and The sixth temperature at a sixth location adjacent to the substrate support, It is configured to measure, The first location, the third location, and the fifth location are different from each other. The second location, the fourth location, and the sixth location are different from each other. The system according to claim 2.

6. The first window contains quartz, The substrate support contains silicon, The system according to claim 1.

7. The first multi-wavelength high-temperature meter is, about 2,650 nm to about 2,750 nm, Approximately 3,300 nm to approximately 3,500 nm, and about 4,800 nm to about 5,200 nm, The system according to claim 1, configured to measure temperature in the wavelength range.

8. A temperature measurement value is received from the first multi-wavelength pyrometer. The operating state of the process chamber is evaluated based on the temperature measurement. The system according to claim 1, further comprising a controller configured as described above.

9. The aforementioned controller, The aforementioned temperature measurement values ​​are stored, Compare the stored temperature measurements, The operating state of the process chamber is evaluated based on the comparison of the temperature measurements. The system according to claim 8, further configured as follows.

10. The system according to claim 1, wherein the first multi-wavelength pyrometer is configured to measure the first temperature and the second temperature simultaneously.

11. A method for monitoring a process chamber, Measuring a first temperature at a first location within the process chamber using a first multi-wavelength pyrometer, wherein the first location is adjacent to a first window in the periphery of the processing space of the process chamber, Measuring the first temperature and simultaneously measuring the second temperature at a second location within the process chamber using the first multi-wavelength pyrometer, wherein the second location is close to the substrate support within the processing space, After measuring the first temperature, the third temperature at the first location is measured using the first multi-wavelength pyrometer, Simultaneously with measuring the third temperature, the fourth temperature at the second location is measured using the first multi-wavelength pyrometer, The operating state of the process chamber is evaluated based on the first temperature, the second temperature, the third temperature, and the fourth temperature. Based on the evaluation of the above operating state, Actions that cause a change in the environment of the process chamber, and Actions that generate alerts, Perform at least one of the following, A method that includes this.

12. The method according to claim 11, wherein evaluating the operating state includes comparing at least two of the first temperature, the second temperature, the third temperature, and the fourth temperature.

13. The method according to claim 11, wherein the action that causes the change in the environment includes adjusting the input power to one or more lamps of the process chamber.

14. The method according to claim 11, wherein the action that generates the alert includes notifying the user that a coating reduction treatment is required for the first window.

15. The first multi-wavelength high-temperature meter is, Approximately 3,300 nm to approximately 3,500 nm, and about 4,800 nm to about 5,200 nm, The method according to claim 11, configured to measure temperature in the wavelength range.

16. Measuring a fifth temperature at a third location within the process chamber using a second multi-wavelength pyrometer, wherein the third location is adjacent to the first window, and measuring the fifth temperature. Measuring the fifth temperature and simultaneously measuring the sixth temperature at a fourth location within the process chamber using the second multi-wavelength pyrometer, wherein the fourth location is close to the substrate support, After measuring the fifth temperature, the seventh temperature at the third location is measured using the second multi-wavelength pyrometer, Simultaneously with measuring the fifth temperature, the eighth temperature at the fourth location is measured using the second multi-wavelength pyrometer, It further includes, Unlike the third location, the first location is Unlike the fourth location, the second location is Evaluating the operating state is based on the fifth temperature, the sixth temperature, the seventh temperature, and the eighth temperature, The method according to claim 11.

17. The first location is close to the central region of the first window, The second location is adjacent to the central region of the substrate support. The method according to claim 16.

18. The second location is close to the upper surface of the substrate support, The fourth location is close to the lower surface of the substrate support. The method according to claim 16.

19. Measuring the ninth temperature at a fifth location within the process chamber using a third multi-wavelength pyrometer, wherein the fifth location is adjacent to a second window in the periphery of the processing space, Measuring the ninth temperature and simultaneously measuring the tenth temperature at a sixth location within the process chamber using the third multi-wavelength pyrometer, wherein the sixth location is close to the substrate support, After measuring the ninth temperature, the eleventh temperature at the fifth location is measured using the third multi-wavelength pyrometer, Simultaneously with measuring the 11th temperature, the 12th temperature at the 6th location is measured using the 3rd multi-wavelength pyrometer, It further includes, The first location, the third location, and the fifth location are different from each other. The second location, the fourth location, and the sixth location are different from each other. Evaluating the operating state is based on the 9th temperature, the 10th temperature, the 11th temperature, and the 12th temperature, The method according to claim 16.

20. A system for processing substrates, A process chamber equipped with a processing space, A first window surrounding the first processing space, A second window surrounding the second processing space, The substrate support in the processing space, The first multi-wavelength high-temperature meter, The first temperature at a first location adjacent to the first window, and The second temperature at a second location adjacent to the substrate support, A first multi-wavelength pyrometer configured to measure, A second multi-wavelength high-temperature meter, The third temperature at a third location adjacent to the first window, and The fourth temperature at a fourth location adjacent to the substrate support, A second multi-wavelength pyrometer configured to measure, A third multi-wavelength high-temperature meter, The fifth temperature at a fifth location adjacent to the second window, and The sixth temperature at a sixth location adjacent to the substrate support, A third multi-wavelength pyrometer configured to measure, Equipped with, The first window contains quartz, The second window contains quartz, The substrate support contains silicon, The first location, the third location, and the fifth location are different from each other. The second location, the fourth location, and the sixth location are different from each other. system.

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