Method for processing a substrate on a bonding system, and related bonding systems

Abstract

A method for processing a substrate on a bonding system is provided. This method includes (a) providing an oxide reduction delivery system to the bonding system; (b) supporting the substrate in a support structure of the bonding system; and (c) moving at least one of the oxide reduction delivery system and the support structure relative to each other, wherein the movement brings the gas supplied by the oxide reduction delivery system into contact with the substrate.

Description

Technical Field

[0001] Cross - reference to Related Applications This application claims the benefit of U.S. Provisional Application No. 63 / 456,724, filed on April 3, 2023, the content of which is incorporated herein by reference.

[0002] The present invention relates to bonding systems and processes (such as flip - chip bonding systems and processes, thermocompression bonding systems and processes, and thermosonic bonding systems and processes), and more particularly to an improved method of processing a substrate on such a bonding system.

Background Art

[0003] Conventional semiconductor packaging typically includes a die - attachment process and a wire - bonding process. Advanced semiconductor packaging technologies (such as flip - chip bonding, thermocompression bonding, etc.) are gaining momentum in the industry. For example, in thermocompression bonding (i.e., TCB), heat and / or pressure (and in some cases ultrasonic energy) are used to form a plurality of interconnects between (i) a conductive structure on a semiconductor element and (ii) a conductive structure on a substrate.

[0004] In certain flip-chip bonding or thermocompression bonding applications, the conductive structures of the semiconductor device and / or substrate may include structures made of materials susceptible to oxidation and / or other contamination (e.g., copper columns). In such applications, it is desirable to provide a suitable atmosphere for bonding. For example, such an atmosphere may be provided by using a reducing gas in the bonding area, which can reduce the potential oxidation and / or contamination of the conductive structure of the semiconductor device or the conductive structure of the substrate to which the semiconductor device is bonded. Examples of patents and patent applications relating to such reducing gas atmospheres include U.S. Patent No. 10,861,820 (titled "Method for bonding a semiconductor device to a substrate, and related bonding apparatus, including the use of a reducing gas"), U.S. Patent No. 11,205,633 (titled "Method for bonding a semiconductor device to a substrate, and related bonding system"), U.S. Patent No. 11,515,286 (titled "Method for bonding a semiconductor device to a substrate, and related bonding system"), and This includes U.S. Patent Application Publication No. 2023 / 0133526 (titled "Related Method"), U.S. Patent Application Publication No. 2023 / 0260953 (titled "Method for Monitoring Gas By-products of a Bonding System, and Related Monitoring System and Bonding System"), U.S. Patent Application Publication No. 2023 / 0326903 (titled "Bonding System and Method for Supplying Reducing Gas to a Bonding System"), and U.S. Patent Application Publication No. 2024 / 0063169 (titled "Bonding System for Bonding Semiconductor Devices to a Substrate, and Related Method"). These references are incorporated herein by reference in their entirety.

[0005] Other conventional techniques that provide such a suitable atmosphere include the use of plasma gas delivery systems or the supply of gases containing attached electrons.

[0006] It is desirable to provide improved methods for processing a substrate in connection with bonding a semiconductor device to the substrate (e.g., reducing oxides on the conductive structure of such a substrate), and related bonding systems. [Overview of the project] [Means for solving the problem]

[0007] According to exemplary embodiments of the present invention, a method for processing a substrate on a bonding system is provided. This method includes (a) providing an oxide reduction delivery system to the bonding system; (b) supporting a substrate in a support structure of the bonding system; and (c) moving at least one of the oxide reduction delivery system and the support structure relative to each other, wherein the movement brings the gas supplied by the oxide reduction delivery system into contact with the substrate.

[0008] According to other embodiments of the present invention, the method described in the preceding paragraph may have one or more of the following features: the oxide reduction delivery system is integrated with the bond head assembly of the bonding system; the oxide reduction delivery system is a reducing gas delivery system; the oxide reduction delivery system is a formic acid vapor delivery system; the oxide reduction delivery system is a plasma gas delivery system; the oxide reduction delivery system is configured to deliver the gas containing attached electrons; step (c) includes moving the oxide reduction delivery system relative to the support structure while the gas is being distributed by the oxide reduction delivery system; step (c) includes moving the support structure relative to the oxide reduction delivery system while the gas is being distributed by the oxide reduction delivery system; and / or step (c) includes moving the oxide reduction delivery system along a first operating axis while distributing the gas, and moving the support structure along a second operating axis while the gas is being distributed by the oxide reduction delivery system.

[0009] Another exemplary embodiment of the present invention provides another method for processing a substrate on a bonding system. This method includes the steps of (a) providing an oxide reduction delivery system integrated with a bond head assembly of the bonding system; (b) supporting a substrate in a support structure of the bonding system; and (c) moving the oxide reduction delivery system relative to the support structure, wherein the movement brings the gas supplied by the oxide reduction delivery system into contact with the substrate.

[0010] According to other embodiments of the present invention, the method described in the preceding paragraph may have one or more of the following features: the oxide reduction delivery system is a reducing gas delivery system; the oxide reduction delivery system is a formic acid vapor delivery system; the oxide reduction delivery system is a plasma gas delivery system; the oxide reduction delivery system is configured to deliver the gas containing attached electrons; and / or, step (c) includes moving the oxide reduction delivery system by moving the bond head assembly according to a predetermined operating profile.

[0011] According to yet another exemplary embodiment of the present invention, a bonding system is provided. This bonding system includes a bond head assembly configured to bond a semiconductor element to a substrate, an oxide reduction delivery system, and a support structure configured to support the substrate. At least one of the oxide reduction delivery system and the support structure is configured to move relative to the other, so that a gas supplied by the oxide reduction delivery system comes into contact with the substrate.

[0012] According to other embodiments of the present invention, the method described in the preceding paragraph may have one or more of the following features: the oxide reduction delivery system is integrated with the bond head assembly; the oxide reduction delivery system is a reducing gas delivery system; the oxide reduction delivery system is a formic acid vapor delivery system; the oxide reduction delivery system is a plasma gas delivery system; the oxide reduction delivery system is configured to deliver the gas containing attached electrons; the oxide reduction delivery system is configured to move relative to the support structure while the gas is being distributed by the oxide reduction delivery system; the support structure is configured to move relative to the oxide reduction delivery system while the gas is being distributed by the oxide reduction delivery system; and / or the oxide reduction delivery system is configured to move along a first operating axis while distributing the gas, and the support structure is configured to move along a second operating axis.

[0013] A further exemplary embodiment of the present invention provides a method for operating a bonding system. This method includes (a) providing an oxide reduction delivery system to the bonding system; (b) supporting a substrate in a support structure of the bonding system; (c) distributing a gas supplied by the oxide reduction delivery system and bringing it into contact with the substrate; and (d) storing information relating to the portion of the substrate being processed in step (c).

[0014] According to another embodiment of the present invention, the method described in the preceding paragraph may have one or more of the following features: step (c) includes moving at least one of the oxide reduction delivery system and the support structure relative to each other so that the gas comes into contact with a portion of the substrate during the moving step; step (d) includes storing information relating to the time over which some of the portions of the substrate are processed during step (c); step (d) includes storing information relating to which portions of the substrate were processed and which portions of the substrate were not processed during step (c); step (d) includes storing information relating to which portions of the substrate were sufficiently processed during step (c) based on a predetermined criterion; step (d) includes the processing of a first portion of the substrate during step (c) which portion of the substrate The process includes a step of determining whether exposure to the gas during processing results in sufficient processing of the second portion of the substrate; a step of providing a schedule for bonding the semiconductor element to the substrate using the information stored in step (d); the step of providing the schedule for bonding the semiconductor element may include a step of providing a schedule for processing the portion of the substrate in connection with bonding the semiconductor element to the substrate; a step of determining whether a particular portion of the substrate has been sufficiently processed using the information stored in step (d); a step of bonding the semiconductor element to the particular portion of the substrate that has been determined to be sufficiently processed; and / or a step of distributing the gas and bringing it into contact with the particular portion of the substrate that has been determined to be insufficiently processed, and then bonding the semiconductor element to the particular portion of the substrate. [Brief explanation of the drawing]

[0015] This invention is best understood by reading the following detailed description in conjunction with the accompanying drawings. Following common practice, the various components in the drawings are not to scale. Rather, the dimensions of the various components have been arbitrarily enlarged or reduced for clarity. The drawings include the following figures: [Figure 1A] Figures 1A to 1E are side views of block diagrams showing a bonding system for bonding a die to a substrate according to an exemplary embodiment of the present invention. [Figure 1B] Figures 1A to 1E are side views of block diagrams showing a bonding system for bonding a die to a substrate according to an exemplary embodiment of the present invention. [Figure 1C] Figures 1A to 1E are side views of block diagrams showing a bonding system for bonding a die to a substrate according to an exemplary embodiment of the present invention. [Figure 1D] Figures 1A to 1E are side views of block diagrams showing a bonding system for bonding a die to a substrate according to an exemplary embodiment of the present invention. [Figure 1E] Figures 1A to 1E are side views of block diagrams showing a bonding system for bonding a die to a substrate according to an exemplary embodiment of the present invention. [Figure 2A] Figures 2A to 2D are side views of block diagrams showing other bonding systems for bonding a die to a substrate, according to other exemplary embodiments of the present invention. [Figure 2B] Figures 2A to 2D are side views of block diagrams showing other bonding systems for bonding a die to a substrate, according to other exemplary embodiments of the present invention. [Figure 2C] Figures 2A to 2D are side views of block diagrams showing other bonding systems for bonding a die to a substrate, according to other exemplary embodiments of the present invention. [Figure 2D] Figures 2A to 2D are side views of block diagrams showing other bonding systems for bonding a die to a substrate, according to other exemplary embodiments of the present invention. [Figure 3A] Figures 3A to 3D are side views of block diagrams illustrating a method for processing a substrate on the bonding system shown in Figures 1A to 1E, according to an exemplary embodiment of the present invention. [Figure 3B]Figures 3A to 3D are side views of a block diagram showing a method of processing a substrate on the bonding system of FIGS. 1A to 1E according to an exemplary embodiment of the present invention. [Figure 3C] Figures 3A to 3D are side views of a block diagram showing a method of processing a substrate on the bonding system of FIGS. 1A to 1E according to an exemplary embodiment of the present invention. [Figure 3D] Figures 3A to 3D are side views of a block diagram showing a method of processing a substrate on the bonding system of FIGS. 1A to 1E according to an exemplary embodiment of the present invention. [Figure 4A] Figures 4A to 4D are side views of a block diagram showing another method of processing a substrate on the bonding system of FIGS. 1A to 1E according to another exemplary embodiment of the present invention. [Figure 4B] Figures 4A to 4D are side views of a block diagram showing another method of processing a substrate on the bonding system of FIGS. 1A to 1E according to another exemplary embodiment of the present invention. [Figure 4C] Figures 4A to 4D are side views of a block diagram showing another method of processing a substrate on the bonding system of FIGS. 1A to 1E according to another exemplary embodiment of the present invention. [Figure 4D] Figures 4A to 4D are side views of a block diagram showing another method of processing a substrate on the bonding system of FIGS. 1A to 1E according to another exemplary embodiment of the present invention. [Figure 5A] Figures 5A to 5C are top views of a block diagram of the bonding system of FIGS. 1A to 1E, showing still another method of processing a substrate on the bonding system according to still another exemplary embodiment of the present invention. [Figure 5B] Figures 5A to 5C are top views of a block diagram of the bonding system of FIGS. 1A to 1E, showing still another method of processing a substrate on the bonding system according to still another exemplary embodiment of the present invention. [Figure 5C]Figures 5A - 5C are top views of the block diagrams of the bonding system of FIGS. 1A - 1E, and show yet another method of processing a substrate on the bonding system according to yet another exemplary embodiment of the present invention. [Figure 6A] Figures 6A - 6G are top views of the block diagrams of the bonding system of FIGS. 1A - 1E, and show yet another method of processing a substrate on the bonding system according to yet another exemplary embodiment of the present invention. [Figure 6B] Figures 6A - 6G are top views of the block diagrams of the bonding system of FIGS. 1A - 1E, and show yet another method of processing a substrate on the bonding system according to yet another exemplary embodiment of the present invention. [Figure 6C] Figures 6A - 6G are top views of the block diagrams of the bonding system of FIGS. 1A - 1E, and show yet another method of processing a substrate on the bonding system according to yet another exemplary embodiment of the present invention. [Figure 6D] Figures 6A - 6G are top views of the block diagrams of the bonding system of FIGS. 1A - 1E, and show yet another method of processing a substrate on the bonding system according to yet another exemplary embodiment of the present invention. [Figure 6E] Figures 6A - 6G are top views of the block diagrams of the bonding system of FIGS. 1A - 1E, and show yet another method of processing a substrate on the bonding system according to yet another exemplary embodiment of the present invention. [Figure 6F] Figures 6A - 6G are top views of the block diagrams of the bonding system of FIGS. 1A - 1E, and show yet another method of processing a substrate on the bonding system according to yet another exemplary embodiment of the present invention. [Figure 6G] Figures 6A - 6G are top views of the block diagrams of the bonding system of FIGS. 1A - 1E, and show yet another method of processing a substrate on the bonding system according to yet another exemplary embodiment of the present invention. [Figure 7] Figure 7 is a flow diagram showing a method of processing a substrate according to an exemplary embodiment of the present invention. [Figure 8]Figure 8 is a flowchart illustrating a method for processing a substrate on a bonding system according to an exemplary embodiment of the present invention. [Modes for carrying out the invention]

[0016] As used herein, the term “semiconductor device” is intended to refer to any structure that includes (or is configured to include in a later process) a semiconductor chip or die. Exemplary semiconductor devices include, in particular, bare semiconductor dies, semiconductor dies on a substrate (e.g., lead frames, PCBs, carriers, semiconductor chips, semiconductor wafers, BGA substrates, semiconductor devices, etc.), packaged semiconductor devices, flip-chip semiconductor devices, dies embedded in a substrate, and stacks of semiconductor dies. Furthermore, a semiconductor device may include elements configured to be bonded to a semiconductor package or otherwise included (e.g., stacked die structures, spacers bonded to a substrate, etc.).

[0017] As used herein, the term “substrate” is intended to refer to any structure on which semiconductor devices can be bonded. Exemplary substrates include, for example, lead frames, PCBs, carriers, modules, semiconductor chips, semiconductor wafers, BGA substrates, and other semiconductor devices.

[0018] The term “gas” as used herein is intended to be interpreted broadly. According to certain exemplary embodiments of the present invention, a flux-free bonding system uses an oxide reduction delivery system to supply a “gas” for reducing oxides on the conductive structure of a substrate and / or semiconductor device. Such a gas may include a carrier gas (e.g., nitrogen, argon, etc.), and such a carrier gas may be a mixture of gases (e.g., a mixture of nitrogen and hydrogen, etc.). For example, the gas may be a reducing gas (e.g., formic acid vapor, acetic acid vapor), a plasma gas (e.g., including a carrier gas such as nitrogen), or a gas containing attached electrons (e.g., including a carrier gas such as a mixture of nitrogen and hydrogen, etc.). The bonding system may be, for example, a flip-chip bonding system, a thermocompression bonding system, a thermosonic bonding system, etc.

[0019] In relation to the bonding system, substrate processing (e.g., cleaning) can be achieved according to specific embodiments of the present invention (e.g., cleaning the substrate to reduce oxides on the conductive structure of the substrate) (e.g., cleaning may be performed according to a predetermined schedule, such as periodic cleaning or planned cleaning in accordance with a planned bonding process). In certain embodiments, an oxide reduction delivery system (e.g., a bond head shroud) may be integrated with the bond head assembly. The oxide reduction delivery system may move (e.g., "scan") across the substrate surface while a gas (e.g., a reducing gas) is applied to process (e.g., clean) the substrate surface. In certain embodiments, a micro-atmosphere of gas (e.g., a reducing gas atmosphere) may be formed on the substrate surface.

[0020] As described above, the oxide reduction delivery system is integrated with the bond head assembly of the bonding system, thereby allowing the motion of the oxide reduction delivery system to be performed using the motion of the bond head assembly. Alternatively, the oxide reduction delivery system is integrated (e.g., coupled) with other motion systems of the bonding system (e.g., an optical motion system), thereby allowing the motion of the oxide reduction delivery system to be performed using the motion of the other motion system. In other alternative forms, the oxide reduction delivery system may include its own motion system.

[0021] Referring here to Figures 1A-1E, a bonding system 100a for processing the substrate 104 is shown. The bonding system 100a is configured to bond a die 112a to the substrate 104. The bonding system 100a includes a bond head assembly 106, which may be configured to move along (and towards the center of) one or more of the bonding system 100a's axes (e.g., x-axis, y-axis, z-axis, theta (rotation) axis, etc.). The bond head assembly 106 includes (and / or mounts) a heater 110 and a bonding tool 108. In certain bonding apparatuses (e.g., thermocompression bonding apparatuses), it may be desirable to heat the bonding tool 108. Figures 1A to 1E show a separate heater 110 for heating the bonding tool 108 (for heating the die 112a), but it will be understood that the heater 110 and the bonding tool 108 may be integrated into a single element (e.g., the heated bonding tool).

[0022] It is shown that the bonding system 100a includes a support structure 102 configured to support the substrate 104. The support structure 102 may be configured to move along one or more of the bonding system 100a's axes (e.g., x-axis, y-axis, z-axis, etc.).

[0023] The bonding system 100a is shown to include (or use) a die supply source 112. Those skilled in the art will understand that any type of semiconductor device supply can be used instead of the die supply source 112 in the various figures. The die supply source 112 is configured to supply dies 112a (or other semiconductor devices) to a pickup structure 118 (e.g., a shelf) through the door 116a of the chamber 116. In connection with the bonding operation, the die 112a is picked up from the pickup structure 118 (e.g., using a bonding tool 108), transported by a bond head assembly 106, and bonded to a substrate 104 (e.g., using a bonding tool 108). In the various embodiments provided herein, it will be understood that an inert atmosphere (e.g., a nitrogen atmosphere) is provided to the chamber 116 to suppress and / or prevent oxidation of the conductive structure within the chamber 116.

[0024] Specifically, referring to Figure 1A, we see how the die 112a is supplied to the pickup structure 118 by the die supply source 112. Figure 1B shows the bond head assembly 106 in contact with the die 112a via the bonding tool 108. Figure 1C shows the bond head assembly 106 transporting the die 112a (for example, along the x-axis) to a position near the bonding location on the substrate 104. Figure 1D shows the bond head assembly 106 placing the die 112a on the substrate 104 at the bonding location (via the bonding tool 108) and bonding it. Figure 1E shows the bond head assembly 106 moving away from the currently bonded die 112a (for example, along the Z-axis).

[0025] In certain bonding applications (e.g., thermocompression bonding, flip-chip bonding), it may be desirable to provide a suitable atmosphere for bonding. Such an atmosphere can be provided by reducing potential oxides in the substrate 104 using a gas (e.g., a reducing gas, plasma gas, or a gas containing attached electrons) in the bonding area before (or concurrently with) the bonding operation. The reducing gas may be delivered (or supplied) to the bonding area by an oxide reduction delivery system 114. In certain embodiments, the oxide reduction delivery system 114 may be integrated with the bond head assembly 106 (of the bonding system). In certain embodiments, the oxide reduction delivery system 114 may be a reducing gas delivery system that distributes the gas or fluid into the bonding area. The oxide reduction delivery system (e.g., a reducing gas delivery system) may include any suitable structure for distributing the gas or fluid, such as a manifold, pipe (or tube) opening, nozzle, or sprayer.

[0026] Next, referring to Figures 2A to 2D, a bonding system 100 for processing the substrate 104 is shown. The bonding system 100 is shown processing (e.g., cleaning, treatment, etc.) the surface of the substrate 104. The bonding system 100 is substantially the same as the bonding system 100a in Figures 1A to 1E, and the same reference numerals are used for similar elements. Therefore, unless otherwise indicated, the description of bonding system 100a can also be applied to bonding system 100.

[0027] Figures 2A-2D show that the bonding system 100 includes an oxide reduction delivery system 114 (instead of a bond head assembly 106 which integrates an oxide reduction delivery system 114a, a heater 110, and a bonding tool 108, as shown in Figures 1A-1E). Although not explicitly shown, those skilled in the art will understand that the bonding system 100 includes a bond head assembly and a bonding tool. The oxide reduction delivery system 114 can be any system that supplies a gas for reducing oxides in the bonding area. In certain embodiments, the oxide reduction delivery system 114 may be an integrated oxide reduction delivery system 114a (as described in relation to Figures 1A-1E) or a separate oxide reduction delivery system (e.g., separate from the bond head assembly). In certain embodiments, the oxide reduction delivery system 114 may be a formic acid vapor delivery system. In certain embodiments, the oxide reduction delivery system 114 may be configured to deliver a gas containing attached electrons. In certain embodiments, the oxide reduction delivery system 114 may be configured to supply a plasma gas to reduce or remove oxides (e.g., on the substrate 104). For example, the oxide reduction delivery system 114 may be a plasma gas delivery system.

[0028] Referring to Figure 2A, the oxide reduction delivery system 114 is shown supplying gas 120 at a first position, causing the gas 120 to come into contact with the substrate 104. Figure 2B shows the oxide reduction delivery system 114 moving horizontally (for example, along the x-axis) (for example, continuously, intermittently, or along a predetermined operating profile). The oxide reduction delivery system 114 is shown supplying gas 120 (for example, continuously or intermittently), and the gas comes into contact with a second position on the substrate 104. Figure 2C shows the oxide reduction delivery system 114 moving further horizontally (for example, along the x-axis). The oxide reduction delivery system 114 is shown supplying gas 120 (for example, continuously or intermittently), and the gas comes into contact with a third position on the substrate 104. Figure 2D shows the oxide reduction delivery system 114 moving further horizontally (for example, along the x-axis), so that the oxide reduction delivery system 114 supplies gas 120 to contact another location on the substrate 104 (for example, continuously, intermittently, etc.). The oxide reduction delivery system 114 may supply a continuous flow of gas 120 as it moves across the substrate 104, or it may supply a flow of gas 120 only at a specified location on the substrate 104.

[0029] Figures 2A to 2D show the oxide reduction delivery system 114 moving relative to the substrate 104 and the support structure 102, in which case the oxide reduction delivery system 114 moves (for example, relative to a reference point of the bonding system 100) while the substrate 104 and the support structure 102 remain in place. However, the present invention is not limited thereto. For example, the support structure 102 may be configured to move along multiple axes of the bonding system 100 (e.g., x-axis, y-axis, z-axis, etc.), and the oxide reduction delivery system 114 may remain in place (e.g., along at least one axis). Thus, while the oxide reduction delivery system 114 distributes the gas 120, the support structure 102 can move relative to the oxide reduction delivery system 114. Similarly, the oxide reduction delivery system 114 may be configured to move along (and towards the center) multiple axes of the bonding system 100 (e.g., x-axis, y-axis, z-axis, theta (rotation) axis, etc.). In certain embodiments, the oxide reduction delivery system 114 can move along a first operating axis (e.g., the y-axis) while distributing the gas 120, and the support structure 102 can move along a second operating axis (e.g., the x-axis) while the oxide reduction delivery system 114 is distributing the gas 120.

[0030] Next, referring to Figures 3A to 3D, a bonding system 100a for processing the substrate 104 (as previously illustrated and described in relation to Figures 1A to 1E) is shown. The bonding system 100a is shown processing (e.g., cleaning, treatment, etc.) the surface of the substrate 104. Figure 3A shows the oxide reduction delivery system 114a supplying gas 120 at a first position, so that the gas 120 comes into contact with the substrate 104. Figure 3B shows the oxide reduction delivery system 114a moving horizontally (e.g., along the x-axis). The oxide reduction delivery system 114a is shown supplying gas 120 (e.g., continuously, intermittently, etc.), so that the gas comes into contact with a second position on the substrate 104. Figure 3C shows the oxide reduction delivery system 114a moving further horizontally (e.g., along the x-axis). Figure 3D shows the oxide reduction delivery system 114a supplying gas 120, which comes into contact with a third location on the substrate 104. Figure 3D shows the oxide reduction delivery system 114a moving further horizontally (for example, along the x-axis), so that the oxide reduction delivery system 114a supplies gas 120 to another location on the substrate 104.

[0031] Next, referring to Figures 4A to 4D, the bonding system 100a for processing the substrate 104 (which was previously illustrated and described in relation to Figures 1A to 1E) is shown again. The bonding system 100a is shown processing (e.g., cleaning, treatment, etc.) the surface of the substrate 104. Figure 4A shows the oxide reduction delivery system 114a supplying gas 120 at a first position, so that the gas 120 comes into contact with the substrate 104. Figure 4B shows the support structure 102 moving horizontally (e.g., along the x-axis) (e.g., continuously, intermittently, or according to a predetermined operating profile). The oxide reduction delivery system 114a is shown supplying gas 120 (e.g., continuously, intermittently, etc.), so that the gas 120 comes into contact with a second position on the substrate 104. Figure 4C shows the support structure 102 moving further horizontally (e.g., along the x-axis). Figure 4D shows the oxide reduction delivery system 114a supplying gas 120, which comes into contact with a third location on the substrate 104. Figure 4D shows the support structure 102 moving further horizontally (for example, along the x-axis), which causes the oxide reduction delivery system 114a to supply gas 120 to come into contact with another location on the substrate 104.

[0032] Figures 2A-2D, 3A-3D, and 4A-4D illustrate a simple path for processing a substrate while distributing gas (e.g., the oxide reduction delivery system moves along a uniaxial linear path, the support structure moves along a simple linear path), but the present invention is not limited thereto. Any kind of movement of the oxide reduction delivery system and / or support structure is envisioned within the scope of the present invention. Figures 5A-5C show a more complex exemplary predetermined operation profile of the oxide reduction delivery system 114a for processing (e.g., cleaning) a substrate 104. Figures 6A-6G show the combined operation of the oxide reduction delivery system 114a and the support structure 102 along an exemplary predetermined operation profile in processing (e.g., cleaning) a substrate 104. Naturally, other alternative operation paths are also envisioned.

[0033] Specifically, referring to Figures 5A to 5C, the top view of the bonding system 100a in Figures 1A to 1E is shown. It is shown that the processing area 104a on the top surface of the substrate 104 includes multiple processing positions (e.g., 104a1, 104a2, ..., 104a49). In Figure 5A, the bond head assembly 106 (and oxide reduction delivery system 114a) is shown detached from the substrate 104. In Figure 5B, the bond head assembly 106 (and oxide reduction delivery system 114a) is shown directly above processing position 104a1 on the substrate 104. At this position, gas 120 (not labeled in Figures 5A to 5C, but refer to gas 120 in the above figures) is supplied to processing position 104a1. In Figure 5C, the bond head assembly 106 (and oxide reduction delivery system 114a) is shown directly above processing position 104a2 on the substrate 104. At this position, gas 120 is supplied to processing position 104a2. This process is repeated for each of the multiple processing positions along the path 122 (e.g., 104a1, 104a2, ..., 104a49) (see Figure 5A). In certain embodiments, the bond head assembly 106 and oxide reduction delivery system 114a are moved continuously across the processing area 104a of the substrate 104. In certain embodiments, the bond head assembly 106 and oxide reduction delivery system 114a are moved to discrete positions across the processing area 104a of the substrate 104 at discrete times (e.g., indexed). In certain embodiments, the residence time (i.e., the time gas 120 is supplied to each processing position) may be configured so that sufficient processing is performed (e.g., a predicted or monitored amount of oxide is removed or reduced).

[0034] Next, referring to Figures 6A to 6G, the top views of the bonding system 100a shown in Figures 1A to 1E are displayed. The processing area 104b on the top surface of the substrate 104 is shown labeled as multiple processing rows (e.g., 104b1, 104b2, ..., 104b7) and multiple processing columns (e.g., indicated by "A", "B", "C", "D", "E", "F", and "G").

[0035] Figure 6A shows the bond head assembly 106 (having an oxide reduction delivery system 114a) before the processing step (and also separated from the substrate 104). The support structure 102 is shown moving along the x-axis (as indicated by the arrow).

[0036] In Figure 6B, the bond head assembly 106 (having an oxide reduction delivery system 114a) is on the substrate 104 (" A The first processing position (located in processing row 104b1 in the processing sequence indicated by ") is shown directly above where gas 120 (not shown) is supplied during the processing step. The bond head assembly 106 (having an oxide reduction delivery system 114a) is shown moving along the y-axis (as indicated by the arrow).

[0037] In Figure 6C, the bond head assembly 106 (having an oxide reduction delivery system 114a) is shown as (" A It is shown that it is in a different processing position (located at processing row 104b7 in the processing column indicated by "). Next, it is shown how the support structure 102 moves along the x-axis.

[0038] In Figure 6D, the support structure 102 is indexed along the x-axis, so the bond head assembly 106 (having an oxide reduction delivery system 114a) is (" B It is shown that it is in yet another processing position (located in processing row 104b7 in the processing sequence shown by "). Next, it is shown how the bond head assembly 106 (having the oxide reduction delivery system 114a) moves along the y axis.

[0039] In Figure 6E, the bond head assembly 106 (having an oxide reduction delivery system 114a) is shown as (" B It is shown that it is in yet another processing position (located at processing row 104b1 in the processing column indicated by "). Next, it is shown how the support structure 102 moves along the x-axis.

[0040] In Figure 6F, the bond head assembly 106 (having an oxide reduction delivery system 114a) is shown as (" G It is shown that it is in yet another processing position (located in processing row 104b1 in the processing column indicated by "). It is shown that the bond head assembly 106 (having an oxide reduction delivery system 114a) moves along the y axis to complete processing in column "G". The oxide reduction delivery system 114a supplies gas 120 (not shown) in each of Figures 6B to 6F.

[0041] In Figure 6G, the bond head assembly 106 (having an oxide reduction delivery system 114a) is shown as (" G This indicates that another processing position has been reached (located at processing row 104b7 in the processing sequence shown). The oxide reduction delivery system 114a may stop supplying gas 120 at this point. This process of distributing gas 120 while moving the oxide reduction delivery system 114a (e.g., by moving the bond head assembly 106) and at least one of the support structures 102 can continue until all processing areas have been processed (e.g., cleaned).

[0042] Figures 3A-3D, 4A-4D, 5A-5C, and 6A-6G each illustrate substrate processing (e.g., removal of oxides from a substrate) using an integrated oxide reduction delivery system (e.g., one integrated with a bond head assembly), but the present invention is not limited to these embodiments. For example, substrates can also be processed using an oxide reduction delivery system that is not integrated with a bond head assembly (see, for example, the description of Figures 2A-2D above).

[0043] Figures 7 and 8 are flowcharts according to a particular exemplary embodiment of the present invention. As will be understood by those skilled in the art, certain steps included in the flowcharts may be omitted, certain additional steps may be added, and the order of the steps may be changed from the order shown.

[0044] Figure 7 is a flowchart showing a method for processing a substrate on a bonding system. In step 700, an oxide reduction delivery system (e.g., oxide reduction delivery system 114, oxide reduction delivery system 114a, etc.) is provided to the bonding system (e.g., bonding system 100, bonding system 100a, etc.). In step 702, the substrate (e.g., substrate 104) is supported on the support structure (e.g., support structure 102) of the bonding system.

[0045] In step 704, at least one of the oxide reduction delivery system and the support structure is moved relative to each other, thereby bringing the gas supplied by the oxide reduction delivery system (e.g., gas 120) into contact with the substrate. For example, the oxide reduction delivery system may be movable while the support structure remains stationary (see, for example, Figures 2A-2D and 3A-3D). In other examples, the support structure may be movable while the oxide reduction delivery system remains stationary (see, for example, Figures 4A-4D). In other examples, both the oxide reduction delivery system and the support structure may be moved relative to each other (e.g., simultaneously, intermittently, at discrete intervals, at index positions, etc.).

[0046] As those skilled in the art will understand, the drawings show a die supply source 112 (including a plurality of semiconductor dies 112a), but the present invention relates to a bonding system configured for bonding any type of semiconductor device.

[0047] While the present invention has primarily described processing operations on a bonding system (e.g., cleaning the substrate to reduce oxides on the conductive structure of the substrate), it is understood that the present invention also includes such processing operations in relation to bonding operations. For example, after processing the substrate (e.g., cleaning) is completed, multiple semiconductor elements may be bonded to the substrate (see, for example, the bonding process in Figures 1A to 1E). In other examples, substrate bonding (e.g., bonding semiconductor elements to the substrate) may be interrupted to process a portion of the substrate, and then substrate bonding (e.g., bonding semiconductor elements to the substrate) may be resumed on the bonding system.

[0048] Those skilled in the art will understand that the actual implementation of the present invention may be more complex than the examples shown in the drawings and described herein. For example, several factors may be considered before carrying out a method for processing (such as cleaning) a substrate and / or bonding a semiconductor device to the substrate. Units per hour (i.e., units per hour: UPH), also known as “throughput,” is an important consideration. Another consideration is the time elapsed since a portion of the substrate has been processed (for example, it may be important to reprocess the substrate by cleaning after some time has passed). Further considerations include the effect on other parts of the substrate by processing a first part of the substrate (for example, spraying one part may provide cleaning for adjacent parts of the substrate). These and other considerations are illustrated in the exemplary flow chart shown in Figure 8.

[0049] Figure 8 is a flowchart showing a method for processing a substrate on a bonding system. In step 800, an oxide reduction delivery system is provided to the bonding system (e.g., oxide reduction delivery system 114 in Figures 2A-2D, oxide reduction delivery system 114a in Figures 1A-1E and other figures herein). In step 802, the substrate is supported in a support structure of the bonding system (e.g., substrate 104 is supported by support structure 102). In step 804, a gas supplied by the oxide reduction delivery system is distributed and comes into contact with the substrate (e.g., in this case the gas is formic acid vapor, plasma gas, or a gas containing attached electrons). In step 806, information relating to the portion of the substrate processed in step (c) is stored. Examples of information that may be stored may include information regarding the processing times of several portions of the substrate, which portions of the substrate were processed (and when), and which portions were not processed. The information may also include which parts of the substrate have been sufficiently processed based on predetermined criteria (e.g., the timing of the final processing of the substrate portion, spatial and temporal proximity to the processed portion of the substrate, parameters relating to the distribution of gases such as chemical composition and flow rate).

[0050] In an optional step 808, a schedule for bonding the semiconductor device to the substrate is provided using the information stored in step 806 (in this case, the schedule is at least partially determined by predetermined criteria used in step 806, for example). Such a schedule may be automatically generated using a computer included in or accessible from the associated bonding system. Step 808 may also include providing a schedule for processing portions of the substrate in relation to bonding the semiconductor device to the substrate (e.g., processing a portion of the substrate, bonding the device to that portion of the substrate, processing another portion of the substrate, bonding the device to that other portion of the substrate, etc.). In an optional step 810, it is determined using the information stored in step 804 whether a particular portion of the substrate has been sufficiently processed. In an optional step 812, the semiconductor device is bonded to the portion of the substrate that has been determined to be sufficiently processed. However, if it is determined that the portion of the substrate has not been sufficiently processed, step 804 is repeated (in this case, gas may be distributed to the portion of the substrate), and then the semiconductor device is bonded to the portion of the substrate.

[0051] Although the present invention has been illustrated and described herein in relation to specific embodiments, the present invention is not intended to be limited to the details shown. Rather, various modifications can be made in detail within the scope of the claims and their equivalents without departing from the present invention.

Claims

1. A method for processing a substrate on a bonding system, (a) A step of providing an oxide reduction delivery system to a bonding system, (b) A step of supporting the substrate in the support structure of the bonding system, (c) A step of moving at least one of the oxide reduction delivery system and the support structure relative to each other, wherein the movement causes the gas supplied by the oxide reduction delivery system to come into contact with the substrate, and A method of having.

2. The method according to claim 1, wherein the oxide reduction delivery system is integrated with the bond head assembly of the bonding system.

3. The method according to claim 1, wherein the oxide reduction delivery system is a reducing gas delivery system.

4. The method according to claim 1, wherein the oxide reduction delivery system is a formic acid vapor delivery system.

5. The method according to claim 1, wherein the oxide reduction delivery system is a plasma gas delivery system.

6. A method according to claim 1, wherein the oxide reduction delivery system is configured to deliver the gas containing attached electrons.

7. A method according to claim 1, wherein step (c) includes moving the oxide reduction delivery system relative to the support structure while the gas is being distributed by the oxide reduction delivery system.

8. A method according to claim 1, wherein step (c) includes moving the support structure relative to the oxide reduction delivery system while the gas is being distributed by the oxide reduction delivery system.

9. A method according to claim 1, wherein step (c) includes moving the oxide reduction delivery system along a first operating axis while distributing the gas, and moving the support structure along a second operating axis while the gas is distributed by the oxide reduction delivery system.

10. A method for processing a substrate on a bonding system, (a) A step of providing an oxide reduction delivery system integrated with the bond head assembly of the bonding system, (b) A step of supporting the substrate in the support structure of the bonding system, (c) A step of moving the oxide reduction delivery system relative to the support structure, wherein the movement causes the gas supplied by the oxide reduction delivery system to come into contact with the substrate, and A method of having.

11. The method according to claim 10, wherein the oxide reduction delivery system is a reducing gas delivery system.

12. The method according to claim 10, wherein the oxide reduction delivery system is a formic acid vapor delivery system.

13. The method according to claim 10, wherein the oxide reduction delivery system is a plasma gas delivery system.

14. A method according to claim 10, wherein the oxide reduction delivery system is configured to deliver the gas containing attached electrons.

15. A method according to claim 10, wherein step (c) includes moving the oxide reduction delivery system by moving the bond head assembly according to a predetermined operating profile.

16. A method according to claim 10, further comprising the step of (d) moving the support structure relative to the oxide reduction delivery system while the gas is being distributed by the oxide reduction delivery system.

17. It is a bonding system, A bond head assembly configured to bond semiconductor elements to a substrate, Oxide reduction delivery system, A support structure configured to support the aforementioned substrate It has, At least one of the oxide reduction delivery system and the support structure is configured to move relative to the other, so that the gas supplied by the oxide reduction delivery system comes into contact with the substrate. Bonding system.

18. A bonding system according to claim 17, wherein the oxide reduction delivery system is integrated with the bond head assembly.

19. A bonding system according to claim 17, wherein the oxide reduction delivery system is a reducing gas delivery system.

20. A bonding system according to claim 17, wherein the oxide reduction delivery system is a formic acid vapor delivery system.

21. A bonding system according to claim 17, wherein the oxide reduction delivery system is a plasma gas delivery system.

22. A bonding system according to claim 17, wherein the oxide reduction delivery system is configured to deliver the gas containing attached electrons.

23. A bonding system according to claim 17, wherein the oxide reduction delivery system is configured to move relative to the support structure while the gas is being distributed by the oxide reduction delivery system.

24. A bonding system according to claim 17, wherein the support structure is configured to move relative to the oxide reduction delivery system while the gas is distributed by the oxide reduction delivery system.

25. A bonding system according to claim 17, wherein the oxide reduction delivery system is configured to move along a first operating axis while distributing the gas, and the support structure is configured to move along a second operating axis.

26. A method for operating a bonding system, (a) A step of providing an oxide reduction delivery system to the bonding system, (b) A step of supporting the substrate in the support structure of the bonding system, (c) A step of distributing the gas supplied by the oxide reduction delivery system and bringing it into contact with the substrate, (d) A step of storing information relating to the portion of the substrate processed in step (c) A method of having.

27. The method according to claim 26, wherein step (c) includes moving at least one of the oxide reduction delivery system and the support structure relative to each other, so that during the step of moving, the gas comes into contact with a portion of the substrate.

28. A method according to claim 26, wherein step (d) includes storing information relating to the time over which some of the portions of the substrate are processed during step (c).

29. The method according to claim 26, wherein step (d) includes storing information relating to which parts of the substrate were processed during step (c) and which parts of the substrate were not processed during step (c),

30. A method according to claim 26, wherein step (d) includes storing information relating to which portion of the substrate was sufficiently processed during step (c) based on predetermined criteria.

31. A method according to claim 30, wherein step (d) includes determining whether the processing of the first portion of the substrate in step (c) results in sufficient processing of the second portion of the substrate due to exposure to the gas during the processing of the first portion of the substrate.

32. A method according to claim 26, further comprising the step of providing a schedule for bonding a semiconductor element to the substrate using the information stored in step (d).

33. A method according to claim 32, wherein the step of providing the schedule includes the step of providing a schedule for processing a portion of the substrate in relation to bonding the semiconductor element to the substrate.

34. A method according to claim 26, further comprising the step of determining whether a particular portion of the substrate has been sufficiently processed using the information stored in step (d).

35. A method according to claim 34, further comprising the step of bonding a semiconductor element to the specific portion of the substrate that has been determined to be sufficiently processed.

36. The method according to claim 34, further comprising the steps of distributing the gas and bringing it into contact with the specific portion of the substrate that is determined to be insufficiently treated, and then bonding the semiconductor element to the specific portion of the substrate.

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