Multichannel precursor delivery system

Abstract

A precursor delivery system for supplying a precursor to a process chamber includes a housing and a removable precursor dispensing assembly detachably coupled to the housing and configured to supply a precursor to the process chamber, the removable precursor dispensing assembly including an ampoule and a first valve assembly fluidly coupled to the ampoule and including a first valve, a second valve, a third valve, and a fourth valve. The precursor delivery system also includes a controller.

Description

Technical Field

[0001] Incorporation by Reference The PCT claims are filed herewith as part of this application. Each application claiming the benefit or priority identified in the PCT claims filed herewith is hereby incorporated by reference in its entirety for all purposes.

Background Art

[0002] In some semiconductor processing operations, such as deposition processes, chemical precursors are stored in an ampoule and delivered to a process chamber to form a layer on a substrate. The chemical precursors can be mixed with a carrier gas within the ampoule. In some deposition processes, two or more chemical precursors are delivered to the process chamber.

[0003] The description of the background art provided herein is for the purpose of generally presenting the context of the disclosure. To the extent that the aspects described in this background art section are not prior art as of the filing date of this application, including the research of the inventors, they are not admitted as prior art to the disclosure, either expressly or by implication.

Summary of the Invention

Means for Solving the Problems

[0004] A precursor delivery system is provided for supplying one or more precursors to a process chamber. The precursor delivery system includes a housing including a front cover, a rear cover, a top cover, a bottom cover, and two side covers, and a removable precursor dispensing assembly detachably coupled to the housing and configured to supply precursors to the process chamber. The removable precursor dispensing assembly includes an ampoule configured to receive and supply precursors to the process chamber, and a first valve assembly fluidly coupled to the ampoule. The first valve assembly includes a first valve fluidly coupled to a first inlet and precursor source supply to the ampoule, a second valve fluidly coupled to a second inlet and source gas supply to the ampoule, a third valve fluidly coupled to the ampoule outlet and an internal vapor discharge line, a first joint between the second valve and the fourth valve, and a fourth valve fluidly coupled to the second joint between the third valve and the fourth valve, and a controller for controlling the operation of the precursor delivery system.

[0005] In some embodiments, the removable precursor dispensing assembly also includes a second valve assembly, the second valve assembly including a second valve and a fifth valve fluid-coupled to a flow controller, a sixth and seventh valve fluid-coupled to a first valve and a vacuum source, and an eighth valve fluid-coupled to a precursor source supply unit having the first valve.

[0006] In some embodiments, the internal steam exhaust line bypasses the second valve assembly.

[0007] In some embodiments, the second valve assembly is positioned above the first valve assembly.

[0008] The precursor delivery system also includes a vapor discharge line fluid-coupled to a removable precursor dispensing assembly ampoule, which is detachably coupled to the rear cover of the housing, and a conduit fluid-coupled to the vapor discharge line, the conduit including a distribution point fluid-coupled to a showerhead of the process chamber, the conduit located close to the bottom of the precursor delivery system or beneath the precursor delivery system.

[0009] The precursor delivery system also includes a pressure gauge located outside the housing, which is fluid-coupled to the conduit.

[0010] The precursor delivery system also includes an elbow valve that fluidly couples the internal vapor discharge line with the vapor discharge line.

[0011] In some embodiments, the precursor includes a silicon-containing precursor.

[0012] Another aspect of the present disclosure relates to an apparatus for processing one or more substrates. The apparatus includes one or more process chambers. Each process chamber includes a chuck for supporting a substrate and a precursor delivery system for supplying one or more precursors into the process chamber to form a film. The precursor delivery system includes a housing having a front cover, a rear cover, a top cover, a bottom cover, and two side covers, and one or more removable precursor dispensing assemblies detachably housed within the housing. Each of the one or more removable precursor dispensing assemblies includes an ampoule configured to store a precursor and a first valve assembly fluidly coupled to the ampoule. The first valve assembly includes a first valve fluidly coupled to a first inlet and precursor source supply to the ampoule, a second valve fluidly coupled to a second inlet and source gas supply to the ampoule, a third valve fluidly coupled to an outlet and internal vapor discharge line of the ampoule, and a first joint between the second valve and the fourth valve, and a fourth valve fluidly coupled to a second joint between the third valve and the fourth valve. The precursor delivery system also includes a controller for controlling the operation of the precursor delivery system. The apparatus also includes a controller that includes program instructions for causing an ampoule to receive a precursor from a precursor source supply unit, for supplying a carrier gas from a source gas supply unit to the ampoule to form a mixture containing the precursor and carrier gas, and for supplying the mixture from the ampoule to a process chamber.

[0013] In some embodiments, each of one or more removable precursor dispensing assemblies further includes a second valve assembly. The second valve assembly includes a second valve and a fifth valve fluidly coupled to a flow controller, a sixth and seventh valve fluidly coupled to a first valve and a vacuum source, and an eighth valve fluidly coupled to a precursor source supply via the first valve.

[0014] In some embodiments, the internal steam exhaust line bypasses the second valve assembly.

[0015] In some embodiments, the second valve assembly is positioned above the first valve assembly.

[0016] In some embodiments, the precursor delivery system includes one or more vapor discharge lines fluid-coupled to ampoules of one or more removable precursor dispensing assemblies, and conduits fluid-coupled to one or more vapor discharge lines, the conduits including distribution points fluid-coupled to one or more showerheads in one or more process chambers, the conduits being located near the bottom of the precursor delivery system or below the precursor delivery system.

[0017] In some embodiments, the precursor delivery system further includes a pressure gauge located outside the housing, the pressure gauge being fluid-coupled to the conduit.

[0018] In some embodiments, each of one or more removable precursor dispensing assemblies further includes an elbow valve that fluidly couples an internal vapor discharge line to one or more vapor discharge lines of each of the one or more removable precursor dispensing assemblies.

[0019] In some embodiments, the apparatus is configured for atomic layer deposition, plasma-enhanced atomic layer deposition, chemical vapor deposition, or plasma-enhanced chemical vapor deposition.

[0020] The apparatus also includes a remote plasma source.

[0021] In some embodiments, one or more precursors include silicon-containing precursors.

[0022] These and other features of the disclosed embodiments are described in detail below with reference to the relevant drawings. [Brief explanation of the drawing]

[0023] [Figure 1]A perspective view of an exemplary precursor delivery system for a process chamber, according to some embodiments. [Figure 2] A view showing the interior of an exemplary precursor delivery system, according to some embodiments. [Figure 3] A schematic flow diagram of precursors and carrier gas in an exemplary precursor delivery system, according to some embodiments. [Figure 4] An enlarged view of the interior of an exemplary precursor delivery system for delivering precursors and carrier gas, according to some embodiments. [Figure 5] A view showing the appearance of the exemplary precursor delivery system of FIG. 4 for delivering precursors and carrier gas, according to some embodiments. [Figure 6] An exemplary rear view of an exemplary precursor delivery system, according to some embodiments. [Figure 7] A schematic diagram of an exemplary processing apparatus for delivering precursors, according to some embodiments.

MODE FOR CARRYING OUT THE INVENTION

[0024] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the presented embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail in order not to unnecessarily obscure the disclosed embodiments. The disclosed embodiments are described in conjunction with specific embodiments, but it will be understood that the disclosed embodiments are not intended to be limiting. ​​In this disclosure, the terms “semiconductor wafer,” “wafer,” “substrate,” and “film on substrate” are used interchangeably. Those skilled in the art will understand that the term “film on substrate” may refer to one or more partially manufactured integrated circuits formed on a substrate during any of the many stages of integrated circuit manufacturing. Wafers or substrates used in the semiconductor device industry typically have a diameter of 200 mm, 300 mm, or 450 mm. The following detailed description assumes that this disclosure is implemented on a wafer. However, this disclosure is not limited in that way. Workpieces may vary in shape, size, and material. In addition to semiconductor wafers, other workpieces on which this disclosure can be utilized include various articles such as printed circuit boards.

[0026] In this disclosure, the terms “deposit” and “form” are used interchangeably. Similarly, the terms “layer,” “film,” and “thin film” are used interchangeably. Those skilled in the art will understand that the “formation” of a “layer” in any of the many stages of integrated circuit manufacturing can refer to the “deposit” of a “film” or “thin film” by one of various film formation methods, such as chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), or plasma-enhanced atomic layer deposition (PEALD), resulting from the reduction of feature size in semiconductor devices.

[0027] Semiconductor device manufacturing typically involves various deposition processes for depositing films on substrates to form integrated circuits and associated devices, including CVD, PECVD, ALD, or PEALD, where a gas mixture containing one or more precursors is introduced into a process chamber to deposit films on the substrate. In some substrate processing systems, radio frequency (RF) plasma may be used to activate the chemical reactions. ALD or PEALD are well-suited film deposition processes for conformal film deposition due to the fact that a single cycle of ALD or PEALD deposits a single thin layer of material, the thickness being limited by the amount of one or more precursors that can be adsorbed onto the substrate surface before the film-forming chemical reaction itself (i.e., forming an adsorption limiting layer). Multiple "ALD cycles" may then be used to build films of the desired thickness, and since each layer is thin and conformal, the resulting films substantially conform to the shape of the underlying device structure. In certain embodiments, each ALD or PEALD cycle includes an operation, namely (1) exposure of the substrate surface to a first precursor, (2) purging of the process chamber in which the substrate is located, (3) activation of the reaction with the substrate surface, typically plasma and / or a second precursor, and (4) purging of the process chamber in which the substrate is located. The first step enumerated herein may be referred to as the “dosing step,” the second step as the “purging step,” the third step as the “RF step,” and the fourth step as the “RF purging step.” The ALD or PEALD process may typically include one or more precursors for depositing a film on the substrate according to the steps of operation described above.

[0028] A precursor delivery system may be provided in a CVD, PECVD, ALD, or PEALD process to provide one or more precursors. The precursor delivery system may typically include one or two channels. The channels may refer to ampoules in which the precursors are stored. For example, two channels may refer to two ampoules storing precursors that can be supplied to a process chamber for forming films on a substrate. In another example, the channels may refer to a removable assembly containing the ampoules. The precursors may be supplied from a precursor source and stored in ampoules, and, depending on the process instruction, the precursors may be introduced into a process chamber for forming films on a substrate. A carrier gas (e.g., a push gas such as nitrogen, helium, or argon) may be mixed with the precursors inside the ampoules, and the precursors may be transported along a gas line to the process chamber. The precursors may be liquid precursors or gaseous precursors. Some gaseous precursors may be produced by vaporizing liquid precursors.

[0029] This disclosure relates to a precursor delivery system for housing three or more channels of conventional dimensions used to accommodate two or fewer channels. Housing three or more channels in currently available compact housing designs had not been previously achieved. Typically, precursor delivery systems used with thin-film deposition apparatus may house two or fewer channels (e.g., ampoules) to provide one or two precursors to the process chamber for film deposition. Some semiconductor manufacturing operations may require the supply of three or more channels. The inventors of this disclosure have surprisingly found that three or more channels can be housed in a compact precursor delivery system, and that only two or fewer channels had been housed previously, with no prior success observed in housing three or more channels. The problem of housing three or more channels in a compact precursor delivery system would not have been solved without the embodiments described in this disclosure.

[0030] Precursor delivery systems according to some embodiments may include ampoules, multiple valves and / or fittings, and gas lines that fluidly connect the ampoules, valves and / or fittings, and process chambers. Instead of incorporating two or fewer channels, the precursor delivery system may incorporate three or more channels internally without altering the overall dimensions of the system. In addition, new designs of precursor delivery systems allow for shorter gas line lengths, such as the gas line length between the ampoules and process chambers. Shorter gas line lengths can be beneficial in reducing pre- and / or post-deposition process purging times. For example, shorter gas line lengths reduce the time required to deliver carrier gas from the gas source to the process chamber, thereby shortening the overall time of the deposition process and improving throughput. Shorter gas line lengths can also improve process gas timing, minimizing delays in the delivery of process gas to the process chambers. Furthermore, precursor delivery systems according to some embodiments allow for a reduction in the number of valves and fittings, which can be beneficial in reducing overall manufacturing and maintenance costs. Additionally, precursor delivery systems enable improved maintainability. For example, easy access to the inside of the precursor delivery system is achieved, which is beneficial for maintenance or repair.

[0031] Figure 1 shows a perspective view of an exemplary precursor delivery system for a process chamber according to several embodiments. The precursor delivery system 100 may detachably house up to three detachable precursor dispensing assemblies. In some embodiments, one, two, or three detachable precursor dispensing assemblies may be housed inside the precursor delivery system 100. However, it will be understood that four or more detachable precursor dispensing assemblies may be housed inside the precursor delivery system 100. Each detachable precursor dispensing assembly may include an ampoule. In some embodiments, the precursor delivery system 100 may be a housing that includes a front cover 102 which can be detachably attached to the precursor delivery system 100 by a hinge system or other suitable coupling means. The front cover 102 may include an opening 104 that allows the interior to be seen. The housing may also include a top cover 112 which includes two side covers 106 and 108, each containing a removable cover 110, and one or more connectors 114 for sending and receiving signals from a controller, and a controller 118 for controlling the operation of the precursor delivery system. The controller 118 may include a microprocessor and a memory capable of storing process recipes and controlling the flow of precursor into and out of each ampoule, independently of or in combination with the controller of the apparatus in which the precursor delivery system is operably and fluidly coupled. Removable covers 110 on both side covers 106 and 108 may provide improved access to the interior of the precursor delivery system 100. The housing may also include a rear cover 120 and a bottom cover 122. In some embodiments, the dimensions of the housing may be approximately 66 cm (width) x 54 cm (height) x 25 cm (depth), or approximately 62 cm (width) x 50 cm (height) x 21.5 cm (depth).

[0032] Figure 2 shows the interior of an exemplary precursor delivery system 200 according to several embodiments. The precursor delivery system 200 may be configured to detachably accommodate at least three detachable precursor dispensing assemblies 210, 220, and 230 within the precursor delivery system 200. In some embodiments, depending on the process command, only one or two detachable precursor dispensing assemblies may be accepted within the precursor delivery system 200, leaving space empty for at least two or one unused detachable precursor dispensing assemblies. In some embodiments, at least three detachable precursor dispensing assemblies 210, 220, and 230 may be accommodated in the precursor delivery system 200 to supply one or more precursors to one or more process chambers. In some embodiments, the dimensions of the removable precursor dispensing assemblies 210, 220, and 230 may be substantially identical, and the overall dimensions of each removable precursor dispensing assembly may be approximately 24 cm (width) x 47 cm (height) x 27 cm (depth), or approximately 19 cm (width) x 42 cm (height) x 22.5 cm (depth).

[0033] Each removable precursor dispensing assembly 210, 220, and 230 may contain ampoules 212, 222, and 232, respectively. One chemical precursor may be stored in each ampoule to supply a controlled dose to the process chamber. In some embodiments, each ampoule may have a volume of about 500 mL to about 3 L. In some cases, each of the three ampoules 212, 222, and 232 may store a different precursor than the others. In some cases, at least two of the three ampoules 212, 222, and 232 may store a single precursor, or the other of the three ampoules 212, 222, and 232 may store a different precursor. In some cases, all three ampoules 212, 222, and 232 may store a single precursor. In some embodiments, each ampoule may be provided with a heating element to maintain the temperature of the precursor at a specific temperature before the precursor is transported from the ampoule.

[0034] Each removable precursor dispensing assembly 210, 220, and 230 may also include a first valve assembly 240 fluidly coupled to each ampoule 212, 222, and 232. For simplicity, the first valve assembly 240 may be described only in relation to the removable precursor dispensing assembly 210.

[0035] The first valve assembly 240 may include a third valve 242 (i.e., a vapor exhaust valve) configured to open and close the flow of precursor from the ampoule 212. The third valve 242 (i.e., a vapor exhaust valve) is positioned close to the ampoule 212 and may be fluidly connected to the outlet (i.e., outlet port) of the ampoule 212 to an internal vapor exhaust line (not shown) located inside the precursor delivery system 200. The first valve assembly 240 also includes a second valve 244 (i.e., a carrier gas inlet valve) fluidly connected to a second inlet of the ampoule 212, the second valve 244 fluidly connecting the second inlet of the ampoule 212 to the outlet of a source gas supply unit (not shown). The first valve assembly 240 may also include a first valve 246 (i.e., a precursor filling valve) fluidly connected to a first inlet (not shown) of the ampoule 212, the first valve 246 fluidly connecting the first inlet of the ampoule 212 to the outlet of a precursor source supply unit (not shown). The first valve assembly 240 may also include a bypass valve 248 configured to divert the carrier gas without passing through the ampoule 212. The first valve assembly 240 in each removable precursor dispensing assembly may operate independently of the first valve assembly in other removable precursor dispensing assemblies in the precursor delivery system 200.

[0036] Each removable precursor dispensing assembly 210, 220, and 230 may also include a second valve assembly 250 configured to receive precursor and carrier gas from a source gas supply unit and a precursor source supply unit and to supply them to various valves in the first valve assembly 240 via multiple gas lines. In some embodiments, the second valve assembly 250 may be located on top of the precursor delivery system 200. In some embodiments, the second valve assembly 250 may be located above the first valve assembly 240. These valves may be mounted in specific spaces within the precursor delivery system to conserve space and further reduce the overall dimensions and footprint of the precursor delivery system. In one example, the second valve assembly 250 may include four valves, which may be described in more detail with respect to Figure 3. The precursor delivery system 200 may also be provided with an exhaust port 260 formed on one side of the top cover 112, which may be used to exhaust, discharge, or remove the precursor or carrier gas from inside the precursor delivery system 200 in the event of a leak from the ampoule 212, 222, or 232, the gas line, or the valve. The second valve assembly 250 in the removable precursor dispensing assembly 210 may be configured to operate independently of the second valve assembly in other removable precursor dispensing assemblies.

[0037] Figure 3 shows schematic flow diagrams of precursor and carrier gases in exemplary precursor delivery systems according to several embodiments. For example, the flow diagram in Figure 3 may illustrate the flow of precursor and carrier gases into and out of one of the removable precursor dispensing assemblies 210, 220, and 230 in the precursor delivery system 200 of Figure 2. However, the flow diagram in Figure 3 is not limited to just one removable precursor dispensing assembly in the precursor delivery system. Instead, the flow diagram in Figure 3 may also apply to any number of removable precursor dispensing assemblies operating independently or in combination with other removable precursor dispensing assemblies within the precursor delivery system 300. The precursor delivery system 300 may include a removable precursor dispensing assembly 310, which includes an ampoule 312, a first valve assembly 340, a second valve assembly 350, and a flow controller 360. In Figure 3, gas lines and / or piping in the exemplary precursor delivery system 300 are shown as lines, and valves are shown as “bow ties” (e.g., two opposing triangles). The flow direction of the precursor and / or carrier gas is indicated as an “arrow”. For the purposes of this disclosure, the terms “gas line portion” and / or “gas line” may be used to describe any gas line in a precursor delivery system that fluidly connects one or more ampoules, one or more first valve assemblies, one or more second valve assemblies, one or more process chambers, one or more source gas supply units, and one or more precursor source supply units.

[0038] The ampoule 312 may be configured to store a precursor and may include a first inlet 336 (i.e., a first inlet port) for receiving the precursor, a second inlet 334 (i.e., a second inlet port) for receiving a carrier gas, and an outlet 332 (i.e., an outlet port) for supplying a mixture of the precursor and the carrier gas, or the carrier gas only or the precursor only. In some embodiments, the precursor may be a silicon-containing precursor for forming a silicon-containing layer, comprising doped or undoped silicon carbide, such as oxygen-doped silicon carbide (SiCO), nitrogen-doped silicon carbide (SiCN), and nitrogen and oxygen-doped silicon carbide (SiOCN). The silicon-containing layer may additionally or alternatively include silicon oxide (SiOx), silicon nitride (SixNy), or oxygen-doped silicon nitride (SiON). In some embodiments, the silicon-containing layer may be deposited by ALD or PEALD. The first valve assembly 340 may include a plurality of valves and gas lines for controlling the flow of precursor or carrier gas into and out of the ampoule 312. In some embodiments, the first valve assembly 340 includes a second valve 344 (i.e., a carrier gas inlet valve) configured to open and close to control the flow of carrier gas from the source gas supply to the ampoule 312, with the second inlet 334 (i.e., a second inlet port) fluidly connected to the ampoule 312 and the outlet of a fifth valve 352 in the second valve assembly 350. A lockout safety on / off valve 374 may optionally be located downstream of the second valve 344 at the second inlet 334 (i.e., a second inlet port) to the ampoule 312 as a safety measure. A third valve 342 (i.e., a vapor exhaust valve) may be configured to open and close to supply the mixture of precursor and carrier gas formed in the ampoule 312 to the process chamber. A third valve 342 (i.e., a vapor discharge valve) may fluidly connect the outlet 332 (i.e., the outlet port) of the ampoule 312 to an internal vapor discharge line 386 located inside the precursor delivery system. The internal vapor discharge line 386 may refer to a vapor discharge line located within the housing.Although not shown in Figure 3, the internal vapor exhaust line 386 may be fluid-coupled to an external vapor exhaust line (e.g., vapor exhaust lines 602, 604, or 606 shown in Figure 6) and ultimately extend to a showerhead fluid-coupled to the process chamber, or to a distribution point that ultimately fluid-connects to the showerhead. The internal vapor exhaust line 386 may be fluid-coupled to the vapor exhaust line via a valve. In some embodiments, the valve may be coupled to the rear wall of the housing. A lockout safety on / off valve 372 may be optionally located upstream of the third valve 342 at the outlet 332 (i.e., the outlet port) from the ampoule 312 as a safety measure. A fourth valve 348 is a bypass valve that allows the carrier gas to bypass or circumvent the ampoule 312, including when at least one of valves 344 and / or 342 is closed. The fourth valve 348 (i.e., a bypass valve) fluidly couples a first joint 378 between the third valve 342 and the fourth valve 348, and a second joint 380 between the second valve 344 and the fourth valve 348. After the first joint 378, for example downstream, the carrier gas may flow along the internal vapor exhaust line 386 toward the inlet to the process chamber. The internal vapor exhaust line 386 may refer to a gas line that fluidly couples the third valve 342 or the fourth valve 348 to the internal vapor exhaust line 386 and to a vapor exhaust line (not shown) located outside the precursor delivery system. The internal vapor exhaust line 386 may refer to a portion of the gas line located inside the precursor delivery system. The internal vapor exhaust line 386 bypasses the second valve assembly 350.

[0039] In some embodiments, the second valve assembly 350 may include four valves, such as a fifth valve 352, a sixth valve 354, a seventh valve 356, and an eighth valve 358. The on / off valve 362 may be connected downstream of the source gas supply unit or fluidly connected to a flow controller 360 (e.g., a mass flow controller (MFC)). The flow controller 360 may be fluidly connected upstream of the inlet of the fifth valve 352 of the second valve assembly 350. The flow controller 360 may control the supply of a carrier gas, such as an inert gas containing nitrogen or argon, from the source gas supply unit to the fifth valve 352. In some embodiments, the flow controller 360 is located upstream of the fifth valve 352 in the second valve assembly 350, and then in the first valve assembly 340 between the fourth valve 348 and the second valve 344, there is a second joint 380 which is fluid-connected to the second inlet 334 (i.e., the second inlet port) of the ampoule 312.

[0040] The fifth valve 352 controls the flow of carrier gas to the second valve 344 (i.e., the carrier gas inlet valve), which is fluidly connected from the flow controller 360 to an optional lockout safety on / off valve 374, and can open and close the second inlet 334 (i.e., the second inlet port) to the ampoule 312. The sixth valve 354 and the seventh valve 356 in the second valve assembly 350 may be fluidly connected to the first valve 346 (i.e., the precursor in the valve), and the first valve 346 may be fluidly connected to the ampoule 312 and a vacuum source (not shown) for maintenance. For example, the sixth valve 354 and the seventh valve 356 may be configured to open to remove residual precursor in the gas line between the ampoule 312 and the vacuum source when maintenance or cleaning of the ampoule 312 is required.

[0041] An eighth valve 358 in the second valve assembly 350 may open and close to supply a precursor from a precursor source to the ampoule 312, and may be configured to fluidly couple the precursor source to a first valve 346 (i.e., the precursor in the valve) which is fluidly coupled to a first inlet 336 (i.e., the first inlet port) of the ampoule 312. A lockout safety valve 376 may optionally be placed downstream of the first valve 346 as a safety measure. Valves 358, 346, and 376 may control the amount of precursor stored in the ampoule 312 so that a constant level of precursor is maintained in the ampoule 312. When valves 358, 346, and 376 are open, the precursor may flow from the precursor source to a third joint 382, ​​where it may be diverted to a gas line section 384 and flow into the ampoule 312. When at least one of valves 358, 346, and 376 is closed, the flow of the precursor to the ampoule 312 can be restricted. In some embodiments, the gas line portion 384 containing the precursor may be configured as a dipstick or the like, or the ampoule 312 may be filled from the top. In other embodiments, the flow path may be a flow path connected to the bottom of the ampoule 312.

[0042] The operation of the precursor delivery system can be described with respect to one removable precursor dispensing assembly in the precursor delivery system shown in Figure 3. In some embodiments, each removable precursor dispensing assembly in the precursor delivery system may operate independently of other removable precursor dispensing assemblies. Alternatively, the operation of two or more removable precursor dispensing assemblies may be controlled by a controller according to specific process commands. During the operation of the removable precursor dispensing assembly 310, the carrier gas (e.g., inert gas) from the source gas supply unit may pass through a gas line via an on / off valve 362, a flow controller 360, a fifth valve 352 of a second valve assembly 350, a second valve 344 of a first valve assembly 340, and optionally a safety on / off valve 374 before entering the ampoule 312. In some embodiments, the precursor supplied from the precursor source via valves 358 and 346 inside the ampoule 312, and optionally via valve 376, may be mixed with the carrier gas inside the ampoule 312 to form a mixture. A mixture containing a precursor and carrier gas having a specific mixing ratio may exit the outlet 332 (i.e., the outlet port) of the ampoule 312 and pass through an optional safety valve 372 and a third valve 342. The mixture may be delivered to a distribution point (shown in Figure 6) via a gas line 386 (i.e., an internal vapor discharge line) fluid-coupled to a vapor discharge line outside the precursor delivery system (i.e., the housing), where the mixture may be distributed to one or more process chambers for deposition. For example, the mixture may flow from the distribution point to a showerhead within one or more process chambers. When valves 344 and / or 342 are closed, the carrier gas flowing from the source gas supply may flow through a fourth valve 348 without passing through the ampoule 312. The carrier gas may flow into the process chamber through the gas line 386. In some embodiments, the carrier gas flowing through the fourth valve 348 may flow into a foreline adjacent to the process chamber without entering the process chamber.

[0043] Typically, a removable precursor gas assembly in a precursor delivery system is designed with many valves and gas lines, such as five or more or eight or more valves in a second valve assembly and an internal vapor exhaust line passing through the second valve assembly. In some embodiments, the removable precursor dispensing assembly 310 of the precursor delivery system 300 of the present disclosure is designed with fewer valves and shorter gas lines. For example, the second valve assembly 350 may be designed to have four or fewer valves. The internal vapor exhaust line 386 may bypass the second valve assembly 350, thereby shortening the internal vapor exhaust line gas length.

[0044] Figure 4 shows an enlarged internal view of an exemplary precursor delivery system for delivering a precursor and carrier gas according to several embodiments. Note that not all components and gas lines of the precursor delivery system are shown in Figure 4. In some embodiments, in each removable precursor dispensing assembly, a mixture of the precursor and carrier gas is formed in an ampoule (not shown here) and may flow out of the ampoule's outlet (i.e., outlet port) and through a third valve 442 (i.e., vapor discharge valve). The third valve 442 in Figure 4 may correspond to the third valve in Figure 3. Subsequently, the mixture of the precursor and carrier gas may pass from the third valve 442 through an internal vapor discharge line (not shown in Figure 4; corresponding to the internal vapor discharge line 386 in Figure 3) which is fluid-coupled to an elbow valve 460, which may also be coupled to the rear cover 420 of the precursor delivery system 400. The elbow valve 460 may be fluid-coupled to a vapor discharge line outside the delivery system. In some embodiments, the elbow valve 460 may be located inside the precursor delivery system. In some embodiments, the length of the gas line from the third valve 442 through the elbow valve 460 to the rear cover 420 may be about 16 to about 25 cm, or about 19 to about 22 cm.

[0045] Figure 5 shows the appearance of an exemplary precursor delivery system of Figure 4 for delivering precursor and carrier gases, according to several embodiments. Note that Figure 5 is not limited to a precursor delivery system having three removable precursor dispensing assemblies. Instead, Figure 5 may also apply to a precursor delivery system having any number of removable precursor dispensing assemblies operating independently or in combination with other removable precursor dispensing assemblies in the precursor delivery system. Figure 5 shows that an elbow valve 460 is fluidly connected to an outlet 570, and that the outlet 570 extends from the rear cover 420. Although only one elbow valve 460 is shown in Figure 5, it should be understood that at least two additional elbow valves may also fluidly connect the ampoules in each removable precursor dispensing assembly to the outlet 570 extending from the rear cover 420. In some embodiments, the position of the elbow valve 460 is designed in combination with an internal vapor exhaust line that bypasses a second valve assembly to provide a reduced flow distance of a mixture of precursor and carrier gas from the ampoule to the process chamber, or a reduced flow distance of the carrier gas only. By shortening the flow distance from the ampoule to the process chamber, purging time can be reduced and process gas timing in the deposition process can be improved. Shortening the flow distance can reduce the overall time to complete the deposition process and increase throughput.

[0046] Figure 6 shows an exemplary rear view of an exemplary precursor delivery system 600 according to several embodiments. It should be noted that Figure 6 is not limited to a precursor delivery system having three removable precursor dispensing assemblies. Instead, Figure 6 may also apply to a precursor delivery system having any number of removable precursor dispensing assemblies operating independently or in combination with other removable precursor dispensing assemblies in the precursor delivery system. In some embodiments, the precursor delivery system 600 may include first, second, and third vapor exhaust lines 602, 604, and 606 for fluid coupling three vapor exhaust lines 602, 604, and 606 to three corresponding removable precursor dispensing assemblies mounted on the exemplary precursor delivery system, respectively. In some embodiments, each vapor line (e.g., the first, second, or third vapor exhaust line 602, 604, or 606 shown in Figure 6) may be fluid coupled to an inner vapor exhaust line 386 in each corresponding removable precursor dispensing assembly. A mixture of the precursor and carrier gas, or the carrier gas alone, may flow from the ampoule 312 of each removable precursor dispensing assembly through the internal vapor discharge line inside the precursor delivery system, as shown in Figure 6, and through the vapor discharge line (i.e., one of the first, second, or third vapor discharge lines 602, 604, and 606).

[0047] In some embodiments, each of the first, second, and third vapor discharge lines 602, 604, and 606 may be fluidically and detachably coupled to a corresponding outlet 570 (shown in Figure 5) formed in the rear cover 620 of the precursor delivery system 600. A mixture of the precursor and carrier gas, or the carrier gas alone, may flow from one or more outlets 570 into a conduit 640 fluidly coupled to the first, second, and third vapor discharge lines 602, 604, and 606. The conduit 640 may receive the mixture or carrier gas from the first, second, and third vapor discharge lines 602, 604, and 606. In some embodiments, the conduit 640 may extend horizontally, or be located close to the bottom of the precursor delivery system 600, or below the precursor delivery system 600. At the intersections of the first, second, and third vapor discharge lines 602, 604, and 606, valves may regulate the delivery of a mixture of the precursor and carrier gas, or the carrier gas alone, to the conduit 640. In this way, the precursor delivery system 600 is configured to deliver a first chemical reaction (e.g., a first precursor and carrier gas), a second chemical reaction (e.g., a second precursor and carrier gas), or a third chemical reaction (e.g., a third precursor and carrier gas) to the conduit 640.

[0048] In some embodiments, an additional gas, such as an inert gas, purge gas, or carrier gas (e.g., nitrogen), may be supplied to the conduit 640. The additional gas may pass through any of the first, second, and third vapor discharge lines 602, 604, and 606, rather than being limited to a specific channel. In some cases, the additional gas may supply a mixture of the precursor and carrier gas exiting one of the first, second, and third vapor discharge lines 602, 604, and 606. The additional gas may function as a push gas for the mixture or carrier gas for an improved gas flow. In some embodiments, a valve may regulate the delivery of the additional gas to the conduit 640.

[0049] In some embodiments, the pressure gauge may be located outside the precursor delivery system 600 and coupled to the conduit 640 to monitor the pressure of the mixture or carrier gas flowing through the conduit 640. Placing the pressure gauge outside the precursor delivery system 600 (i.e., outside rather than inside the precursor delivery system 600) simplifies the design of the precursor delivery system 600 while improving its accessibility and maintainability.

[0050] The conduit 640 may include a distribution point 650 (i.e., an opening) which can be fluid-coupled to one or more showerheads in one or more process chambers. In some embodiments, a mixture of the precursor and carrier gas, or only the carrier gas, may pass through the distribution point 650. This supplies the precursor and carrier gas, or only the carrier gas, to one or more process chambers via one or more showerheads as part of the deposition process. By having first, second, and third vapor discharge lines 602, 604, and 606 corresponding to first, second, and third removable precursor dispensing assemblies, the precursor delivery system 600 is configured to deliver at least three different chemicals to one or more process chambers as part of the deposition process.

[0051] In one example, the lengths of the first, second, and third steam discharge lines 602, 604, and 606 may be approximately 37 cm to 51 cm. In some embodiments, the combined length of the inner steam discharge line 386 and one of the first, second, and third steam discharge lines 602, 604, and 606 may be approximately 63 cm to 76 cm.

[0052] In some embodiments, the mixture flowing out of the ampoule may flow to the distribution point 650 without passing through additional valves, such as on / off valves. For example, referring again to the flow diagram in Figure 3, the mixture flowing out of the outlet (i.e., outlet port) 332 of the ampoule 312 may flow directly through the inner vapor discharge line 386 without passing through valves in the second valve assembly 350. This flow path allows the mixture to not flow through additional valves. This can therefore reduce the distance the mixture containing the precursor travels from the ampoule 312 to the distribution point 650 (as shown in Figure 6), thereby reducing the time it takes to introduce the precursor in the mixture into the process chamber. The flow paths shown in Figures 3 and 6 can also reduce the time it takes for the carrier gas to flow from the source gas supply to the process chamber, thereby reducing the purging time before and / or after the deposition process. As a result, the overall time of the entire deposition process is reduced, and throughput is improved. The precursor delivery system in some embodiments also reduces the number of extra valves, as the precursor does not pass through any valves while flowing from the third valve 342 to the distribution point 650 (as shown in Figure 6). Furthermore, shortening the length of the gas lines can reduce material costs and maintenance costs.

[0053] Furthermore, each of the precursor dispensing assemblies 210, 220, and 230 is detachable from the precursor delivery system 200. This allows one or two of the detachable precursor dispensing assemblies 210, 220, and 230 to be easily removed from the precursor delivery system 200. As a result, the precursor delivery system 200 of this disclosure can be modularized to deliver one chemical reaction, two chemicals, or three chemical reactions.

[0054] Figure 7 is a schematic diagram of exemplary plasma processing apparatus according to several embodiments. According to some embodiments, it will be understood that the plasma processing apparatus of Figure 7 can be used to deposit films by ALD, PEALD, CVD, or PECVD, and / or to process a process chamber by delivering a plasma stream. In some embodiments, it is possible to deposit films by CVD or ALD using the apparatus of Figure 7. In some embodiments, it is possible to deposit films by remote plasma CVD or remote plasma ALD using the apparatus of Figure 7.

[0055] The plasma processing apparatus 700 in Figure 7 includes a remote plasma source 702 separated from the process chamber 704. The remote plasma source 702 is fluidly coupled to the process chamber 704 via a gas distributor or showerhead 706. Coils 728 may be arranged around the remote plasma source 702, and the remote plasma source 702 includes an outer wall (e.g., a quartz dome). The outer wall may be semicircular or elliptical. In some embodiments, the outer wall may be made of a ceramic material. The coils 728 are electrically coupled to a plasma generator controller 732, which can be used to form and maintain plasma within the plasma region 734 via inductively coupled plasma generation, capacitively coupled plasma generation, microwave plasma generation, DC plasma generation, or laser-generated plasma generation. In some embodiments, the plasma generator controller 732 may include a power supply for supplying power to the coils 728, and the power can range from about 500 watts (W) to about 15 kilowatts (kW) per station, or from about 2 kW to about 10 kW per station during plasma generation. In some embodiments, electrodes or antennas for parallel-plate plasma generation, inductively coupled plasma generation, capacitively coupled plasma generation, microwave plasma generation, DC plasma generation, or laser-generated plasma generation may be used to generate a continuous supply of radicals via plasma excitation. In some embodiments, radicals and / or ions may be generated by inductively coupled plasma generation. In some embodiments, radicals and / or ions may be generated by microwave plasma, direct current (DC) plasma, or laser-generated plasma. Regardless of the mechanism used to ignite and maintain the plasma within the plasma region 734, radical species may be continuously generated using plasma excitation.

[0056] The supply of ions and radicals can be continuously generated within the plasma region 734 while one or more source gases are supplied to the remote plasma source 702. Ions generated in the plasma region 734 can be removed by the ion filter of the showerhead 706. In this way, radicals generated in the plasma region 734 can be supplied to the substrate 772 in the process chamber 704 while limiting ion bombardment. Conditions within the remote plasma source 702, including the composition of the source gas supplied to the remote plasma source 702 and the RF power supplied to the coil 728, can be controlled to optimize the generation of desired radical species within the plasma region 734.

[0057] In Figure 7, the source gas supply unit 736 is fluidly coupled to the remote plasma source 702 to supply the source gas. In some embodiments, one or more source gases may include oxygen-containing reactants such as oxygen (O2), carbon dioxide (CO2), or nitrogen dioxide (NO2); fluorine-containing reactants such as nitrogen trifluoride (NF3), fluorine (F2), carbon tetrafluoride (CF4), or carbon hexafluoride (C2F6); hydrogen-containing reactants such as hydrogen (H2) or methane (CH4); inert gases such as argon (Ar); nitrogen-containing reactants such as nitrogen (N2), ammonia (NH3), diazene (N2H2), or hydrazine (N2H4); carbon-containing reactants such as acetylene (C2H2) or propene (C3H6); or mixtures thereof.

[0058] The deposited film may be a silicon-based film containing doped or undoped silicon carbide, such as oxygen-doped silicon carbide (SiCO), nitrogen-doped silicon carbide (SiCN), and nitrogen- and oxygen-doped silicon carbide (SiOCN). Often, doped silicon carbide has up to about 50% dopant atoms, regardless of whether those atoms are oxygen, nitrogen, or atoms of another element. The doping level provides the desired film properties. The silicon-containing film may also contain silicon oxide (SiOx), silicon nitride (SixNy), or oxygen-doped silicon nitride (SiON). The gas mixture supplied to the remote plasma source for the film deposition process may include, but is not limited to, oxygen (O2), carbon dioxide (CO2), nitrogen dioxide (NO2), hydrogen (H2), methane (CH4), argon (Ar), nitrogen (N2), ammonia (NH3), diazene (N2H2), hydrazine (N2H4), acetylene (C2H2), propene (C3H6), or mixtures thereof.

[0059] The type of radical species generated in the remote plasma source 702 can be determined by the source gas supplied to the remote plasma source 702. In some embodiments, depending on the properties of the source gas, the mixture of radical species may be hydrogen radicals (H * ), nitrogen radical (N * ), oxygen radical (O * ), fluorine radical (F * ), amine radical (NH * NH2 * ), carbon radical (C * These radicals may include, or a combination thereof. These radicals may be generated within the plasma region 734 under near-steady conditions during steady-state film deposition or chamber processing, as controlled by the plasma generator controller 732, although transient phenomena may occur at the start and end of film deposition and / or chamber processing.

[0060] An additional gas supply unit 738 is fluid-coupled to the remote plasma source 702 to supply one or more additional gases. While the embodiment in Figure 7 shows a gas mixture of a source gas and one or more additional gases introduced through a separate gas outlet, it will be understood that the gas mixture may be introduced directly to the remote plasma source 702. That is, a pre-mixed, diluted gas mixture may be supplied to the remote plasma source 702 through a single gas outlet. One or more additional gases may include carrier gases. Non-limiting examples of additional gases may include helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and nitrogen (N2). One or more additional gases may support or stabilize steady-state plasma conditions within the remote plasma source 702, or they may assist transient plasma ignition or extinguishing processes.

[0061] In some embodiments, the gas conduits from a gas source (not shown) through a source gas supply unit 736 to the remote plasma source 702, and / or the gas conduits from a gas source (not shown) through an additional gas supply unit 738 to the remote plasma source 702, may be designed to withstand high gas flow rates according to some embodiments.

[0062] In some embodiments, one or more co-reactants that are not primary silicon-containing precursors or hydrogen radicals are introduced during the deposition reaction. In some embodiments, the plasma apparatus is configured to introduce the co-reactants through a source gas supply unit 736 or an additional gas supply unit 738, in which case the co-reactants are converted to plasma at least partially. Examples of such co-reactants include carbon dioxide (CO2), carbon monoxide (CO), water (H2O), methanol (CH3OH), oxygen (O2), ozone (O3), nitrogen (N2), nitrous oxide (N2O), ammonia (NH3), diazene (N2H2), methane (CH4), ethane (C2H6), acetylene (C2H2), ethylene (C2H4), diborane (B2H6), and combinations thereof. Other examples of such co-reactants may include silicon-containing precursors with a different chemical composition from the primary silicon-containing precursor.

[0063] Plasma-activated species 742, such as excited nitrogen, hydrogen, carbon, oxygen, fluorine, and / or amine radicals, flow from a remote plasma source 702 into the process chamber 704 via a showerhead 706. In some embodiments, the plasma-activated species 742 may be a plasma flow. The plasma-activated species 742 in the showerhead 706 and the process chamber 704 generally do not undergo continuous plasma excitation therein. The showerhead 706 may have a plurality of gas ports for diffusing the flow of plasma-activated species 742 into the process chamber 704. In some embodiments, the plurality of gas ports may be spaced apart from each other. In some embodiments, the plurality of gas ports may be arranged as an array of regularly spaced channels or through-holes extending through a plate separating the remote plasma source 702 and the process chamber 704. The plurality of gas ports may smoothly disperse and diffuse the radicals (including plasma-activated species 742) emitted from the remote plasma source 702 into the deposition zone 710 of the process chamber 704 while removing ions. As the plasma-activated species 742 (i.e., plasma stream) pass through the multiple gas ports in the showerhead 706, they may flow further downward. In some embodiments, the plasma stream may include fluorine species and other plasma-activated species.

[0064] To deposit a silicon-based film, one or more silicon-containing precursors 744 (or other process gases) may be introduced into the process chamber 704 by the delivery of plasma-activated species 742 from the showerhead 706 to the process chamber 704. The silicon-containing precursors 744 may be introduced via a gas outlet 708, which may be fluid-coupled to one or more silicon-containing precursor sources 740. According to some embodiments, one or more precursor source supplies, such as one or more silicon-containing precursor sources 740, may be fluid-coupled to a precursor delivery system 760. The precursor delivery system 760 may further include a heating element for maintaining the temperature of the silicon-containing precursors at a specific temperature. As described above, the precursor delivery system 760 may be configured to supply at least three different chemicals or precursors to the process chamber 704 via the gas outlet 708. The gas outlet 708 may include spaced-apart openings so that the flow of silicon-containing precursors 744 can be introduced in a direction parallel to the plasma-activated species 742 flowing from the showerhead 706. In some embodiments, the gas outlet 708 may be located downstream of the showerhead 706. In some embodiments, the gas outlet 708 is part of the showerhead 706, such as a dual plenum showerhead. The dual plenum showerhead may provide separate outlets / passages for the plasma-activated species 742 and the silicon-containing precursor 744 to avoid mixing in the showerhead 706. In this way, the silicon-containing precursor 744 can flow into the process chamber 704 via the showerhead 706 without being exposed to the plasma in the remote plasma source 702. The gas outlet 708 may be located upstream of the deposition zone 710 and the substrate 712. The deposition zone 710 is located inside the process chamber 704 between the gas outlet 708 and the substrate 712.

[0065] In some embodiments, the silicon-containing precursor may contain at least one or more Si-Si bonds and / or at least one or more Si-H bonds. Silicon-containing precursors suitable for use according to the disclosed embodiments may include silanes (SiH4), disilanes (Si2H6), and organosilanes such as methylsilane, ethylsilane, isopropylsilane, t-butylsilane, dimethylsilane, diethylsilane, di-t-butylsilane, allylsilane, sec-butylsilane, texylsilane, isoamylsilane, t-butyldisilane, and di-t-butyldisilane.

[0066] In some embodiments, the silicon-containing precursor may also include halosilanes. Halosilanes may contain at least one halogen group and may or may not contain hydrogen and / or carbon groups. Examples of halosilanes are iodosilane, bromosilane, chlorosilane, and fluorosilane. Specific chlorosilanes include tetrachlorosilane, trichlorosilane, dichlorosilane, monochlorosilane, chloroallylsilane, chloromethylsilane, dichloromethylsilane, chlorodimethylsilane, chloroethylsilane, t-butylchlorosilane, di-t-butylchlorosilane, chloroisopropylsilane, chloro-sec-butylsilane, t-butyldimethylchlorosilane, and texyldimethylchlorosilane.

[0067] In some embodiments, the silicon-containing precursor may also include aminosilanes. Aminosilanes contain at least one nitrogen atom bonded to a silicon atom, but may also contain hydrogen, oxygen, halogens, and carbon. Examples of aminosilanes include mono-, di-, tri-, and tetra-aminosilanes (H3Si(NH2), H2Si(NH2)2, HSi(NH2)3, and Si(NH2)4, respectively), as well as substituted mono-, di-, tri-, and tetra-aminosilanes, such as t-butylaminosilane, methylaminosilane, tert-butylsilaneamine, bis(tert-butylamino)silane (SiH2(NHC(CH3)3)2(BTBAS)), tert-butylsilylcarbamate, SiH(CH3)-(N(CH3)2)2, SiHCl-(N(CH3)2)2, (Si(CH3)2NH)3, etc. A further example of an aminosilane is trisilylamine (N(SiH3)). In some embodiments, aminosilanes having two or more amine groups bonded to a central Si atom may be used. These may result in less damage than aminosilanes with only a single amine group bonded.

[0068] Further examples of silicon-containing precursors include trimethylsilane (3MS); ethylsilane; butasilane; pentasilane; octasilane; heptasilane; hexasilane; cyclobutasilane; cycloheptasilane; cyclohexasilane; cyclooctasilane; cyclopentasilane; 1,4-dioxa-2,3,5,6-tetrasilacyclohexane; diethoxymethylsilane (DEMS); diethoxysilane (DES); dimethoxymethylsilane; dimethoxysilane (DMOS); methyl-diethoxysilane (MDES); methyl-dimethoxysilane (MDMS); octamethoxydodecasiloxane (OMODDS); tert-butoxydisilane; tetramethylcyclotetrasiloxane (TMCTS); tetraoxymethylcyclotetrasiloxane (TOMCTS); triethoxysilane (TES); triethoxysiloxane (TRIES); and trimethoxysilane (TMS or TriMOS).

[0069] In addition to the silicon-containing precursor, the environment adjacent to the substrate may preferably contain one or more radical species in a substantially low-energy state. These radicals may include hydrogen radicals, nitrogen radicals, oxygen radicals, amine radicals, carbon radicals, or combinations thereof. In some embodiments, all, substantially all, or substantially some of the hydrogen atom radicals may be in the ground state; for example, at least about 90% or 95% of the hydrogen atom radicals adjacent to the substrate may be in the ground state. In some embodiments, when excited hydrogen atom radicals lose their energy or relax, they may become substantially low-energy hydrogen atom radicals or ground-state hydrogen atom radicals. Substantially low-energy or ground-state hydrogen atom radicals can selectively break Si-H and Si-Si bonds while generally preserving Si-O, Si-N, and / or Si-C bonds. In some embodiments, process conditions may be provided such that excited hydrogen atom radicals lose energy or relax to form substantially low-energy or ground-state hydrogen atom radicals.

[0070] In the film deposition process, it is possible to prevent a significant portion of the silicon-containing precursor 744 from mixing with plasma-activated species 742 in or adjacent to the showerhead 706. In some embodiments, the silicon-containing precursor 744 may be delivered to the substrate 712 in a separate ALD cycle administration stage from the plasma-activated species 742 delivered to the substrate 712 during the plasma exposure stage of the ALD cycle. The adsorbed silicon-containing precursor 744 may react with radicals of plasma-activated species 742 during the plasma exposure stage of the ALD cycle to deposit a film. In some embodiments, the silicon-containing precursor 744 may be continuously delivered to the substrate 712 to interact with plasma-activated species 742 in the deposition zone 710 to deposit a film by CVD. The radicals of plasma-activated species 742 may mix with the silicon-containing precursor 744 in the gas phase during CVD formation of the film.

[0071] The gas can be removed from the process chamber 704 via an outlet 748 fluid-coupled to a pump (not shown). Thus, radical species or purge gas can be removed from the process chamber 704.

[0072] The substrate 712 is supported on a substrate support structure or a wafer base 714 (i.e., a base). The base 714 may consist of lift pins or other movable support members to position the substrate 712 within the deposition zone 710. The substrate 712 may be moved to a position closer to or further away from the shower head 706. In some embodiments, the base 714 may also regulate the temperature of the substrate 712, thereby providing some selective control over thermally activated surface reactions on the substrate 712.

[0073] The base 714 may be made of a ceramic material. In one embodiment, the base 714 can be made of aluminum nitride, which may be suitable for high-temperature processes, such as plasma processing environments, without causing thermal damage to the base 714. Other surfaces of the process chamber 704 may be formed of a ceramic material such as aluminum nitride.

[0074] In some embodiments, the base 714 includes an electrostatic chuck 716. The electrostatic chuck 716 may include one or more electrostatic clamp electrodes 718 embedded within the body of the electrostatic chuck 716. In some embodiments, one or more electrostatic clamp electrodes 718 may be coplanar or substantially coplanar. The electrostatic clamp electrodes 718 may be powered by a DC power supply or a DC chucking voltage (e.g., about 200V to about 2000V) so that the substrate 712 can be held on the electrostatic chuck 716 by electrostatic attraction. Power to the electrostatic clamp electrodes 718 may be supplied via a first wire 720. The electrostatic chuck 716 may further include one or more heating elements 722 embedded within the body of the electrostatic chuck 716. One or more heating elements 722 may include a resistance heater. In some embodiments, one or more heating elements 722 are positioned below one or more electrostatic clamp electrodes 718. One or more heating elements 722 may be configured to heat the substrate 712 to a temperature of approximately 450°C, approximately 500°C, approximately 550°C, approximately 600°C, or approximately 650°C. One or more heating elements 722 provide selective temperature control to the substrate 712. Power to one or more heating elements 722 may be supplied via a second wire 724.

[0075] In some embodiments, a thermal shield (not shown) may be positioned beneath the base 714. The thermal shield acts as an insulator beneath the base 714 to mitigate heat loss due to thermal radiation, thereby reducing the amount of power required to maintain the base 714 at a particular high temperature, and also prevents other components within the process chamber 704 from overheating due to excess heat radiated from the base 714. For example, the thermal shield may be radially offset from the stem 726, or it may have a thin annular shape with a high field of view relative to the underside of the electrostatic chuck 716. Thus, an annular thermal shield can reduce radiative heat loss from the base 714.

[0076] The controller 750 may include instructions for controlling process conditions for the operation of the plasma processing apparatus 700. The controller 750 typically includes one or more memory devices and one or more processors. The processors may include a CPU or computer, analog and / or digital input / output connections, a stepper motor controller board, etc. Instructions for performing appropriate control operations are executed on the processors. These instructions may be stored in memory devices associated with the controller 750 or provided via a network.

[0077] In certain embodiments, the controller 750 controls all or most of the activities of the plasma processing apparatus 700 described herein. For example, the controller 750 may control all or most of the activities of the plasma processing apparatus 700 related to film deposition and / or chamber processing. In some embodiments, the controller 750 includes a processor system 752 (e.g., a microprocessor) configured to execute instructions held in a data system 754 (e.g., memory). In some embodiments, the controller 750 may communicate with a plasma generator controller 732 to control plasma parameters and / or conditions in a remote plasma source 702. In some embodiments, the controller 750 may communicate with a pedestal 714 to control the pedestal height (substrate position), electrostatic chuck and electrostatic chuck release, and temperature. In some embodiments, the controller 750 can control other processing conditions, among other processing conditions, such as RF power setting, frequency setting, duty cycle, pulse time, pressure in the process chamber 704, pressure in the remote plasma source 702, gas composition, and gas flow rate from the source gas supply unit 736, gas composition, and gas flow rates from the additional gas supply unit 738 and other supplies, the temperature of the base 714, and the temperature of the process chamber 704.

[0078] In some embodiments, the controller 750 may include commands configured to perform actions such as heating the process chamber 704 to a predetermined temperature, delivering a plasma flow from a remote plasma source 702 to the process chamber 704 via a showerhead 706, and moving gaseous contaminants by the plasma flow from the showerhead 706. In some embodiments, the plasma flow includes a fluorine-containing reactant such as nitrogen trifluoride. For example, the plasma flow includes gas species including oxygen, fluorine, nitrogen, argon, or combinations thereof. In some embodiments, the predetermined temperature may be in the range of 450°C to 650°C.

[0079] In some embodiments, the controller 750 may include instructions configured to perform actions such as introducing a dose of silicon-containing precursor 744 into the gas phase for adsorption onto the substrate 712, and exposing the substrate 712 to plasma-activated species 742 of a source gas generated in a remote plasma source 702, where the adsorbed silicon-containing precursor 744 reacts with the plasma-activated species 742 to deposit a silicon-containing film. In some embodiments, the controller 750 may introduce a purge gas between the administration of the silicon-containing precursor 744 and the exposure to the plasma-activated species 742 in the ALD process. In some embodiments, the silicon-containing precursor 744 may be introduced from a precursor delivery system 760 having at least three different channels or a removable precursor dispensing assembly. The precursor delivery system 760 may be designed using a gas line close to the showerhead 706 and close to the exhaust port, as described above.

[0080] In some embodiments, the plasma processing apparatus 700 may include a user interface associated with the controller 750. The user interface may include a display screen, a graphical software display of the plasma processing apparatus 700 and / or processing conditions, as well as user input devices such as a pointing device, keyboard, touch screen, and microphone.

[0081] The computer program code to control the above operations can be written in any conventional computer-readable programming language, such as assembly language, C, C++, Pascal, or Fortran. The compiled object code or script is executed by the processor to perform the tasks identified within the program.

[0082] Signals for monitoring the process may be provided by the analog and / or digital input connections of the controller 750. Signals for controlling the process are output to the analog and digital output connections of the processing system.

[0083] Broadly speaking, the controller 750 can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers (e.g., software) that execute program instructions. Program instructions may be instructions communicated to the controller 750 in the form of various individual settings (or program files) that define operating parameters for performing a particular process on a semiconductor wafer or system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to achieve one or more processing steps during the manufacturing of one or more layers, materials (e.g., silicon nitride), surfaces, circuits, and / or dies of a wafer.

[0084] In some embodiments, the controller 750 may be part of a computer integrated with the system, coupled to the system, or otherwise networked to the system, or a combination thereof. For example, the controller 750 may be all or part of a “cloud” or fab host computer system, and may enable remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance metrics from multiple manufacturing operations, modify parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network, which may include a local network or the internet. The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller 750 receives instructions in the form of data specifying the parameters of each of the processing steps performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool to which the controller 750 is configured to interface or control. Therefore, as described above, the controller 750 may be distributed, for example, by including one or more individual controllers that are networked together and operate toward a common purpose such as the processes and controls described herein. An example of a distributed controller for such purposes is one or more integrated circuits on a chamber that communicate with one or more remotely located integrated circuits that are combined (at the platform level or as part of a remote computer, for example) to control the processes on the chamber.

[0085] Exemplary systems according to some embodiments of this specification may include ALD chambers or modules, PEALD chambers or modules, CVD chambers or modules, PECVD chambers or modules, and any other semiconductor processing systems that may be related to or used in the fabrication and / or manufacturing of semiconductor wafers.

[0086] In some embodiments, the process chamber of an exemplary plasma processing apparatus may be used to deposit a thin layer by any suitable deposition method such as ALD, PEALD, CVD, or PECVD, depending on the process recipe, and / or to clean the inner surface of the process chamber according to the embodiments herein.

[0087] In some embodiments, the process chamber may include a remote plasma source located above the process chamber. The remote plasma source may be a dome and may include coils around it. The remote plasma source may include a plasma region within it. The remote plasma source may be fluidly coupled to the process chamber via a showerhead.

[0088] In some embodiments, a precursor delivery system may be provided to a process chamber to supply at least three precursors to a substrate within the process chamber. The precursor delivery system may be configured to removably receive at least three removable precursor dispensing assemblies. Each removable precursor dispensing assembly may include an ampoule that stores a precursor and can supply up to three different precursors to the process chamber. Each precursor may be a liquid precursor or a gaseous precursor and may be mixed with a carrier gas before being introduced into the process chamber. Each precursor may be a silicon-containing precursor. In some embodiments, the time it takes for the precursors to flow from the ampoule to the process chamber can be reduced, thereby reducing the purging time before and / or after the deposition process and improving throughput. Precursor delivery systems according to some embodiments include a reduced number of valves and fittings, thereby reducing manufacturing costs and improving the maintainability of the precursor delivery system.

[0089] conclusion While the embodiments described above have been explained in some detail to clarify understanding, it will be clear that certain changes and modifications can be made within the scope of the appended claims. It should be noted that there are many alternative ways of implementing the processes, systems, and apparatus of this embodiment. Therefore, this embodiment should be considered illustrative and not limiting, and embodiments should not be limited to the details given herein. [Explanation of Symbols]

[0090] 100 Precursor delivery system, 102 Front cover, 104 Opening, 106 Side cover, Both side covers, 110 Removable cover, 112 Top cover, 114 Connector, 118 Controller, 120 Rear cover, 122 Bottom cover, 200 Precursor delivery system, 210 Precursor dispensing assembly, 212 Ampoule, 220 Precursor dispensing assembly, 222 Ampoule, 240 Valve assembly, 242 Valve, 244 Valve, 246 Valve, 248 Bypass valve, 250 Valve assembly, 260 Exhaust section, 300 Precursor delivery system, 310 Precursor dispensing assembly, 312 Ampoule, 332 Outlet, 334 Inlet, 336 Inlet, 340 Valve assembly, 342 Valve, 344 Valve, 346 Valve, 348 Valve, 350 Valve assembly, 352 Valve, 354 Valve, 356 Valve, 358 Valve, 360 Flow controller, 362 On / off valve, 372 Lockout safety on / off valve, 374 Lockout safety on / off valve, 376 Lockout safety on / off valve, 378 Joint, 380 Joint, 382 Joint, 384 Gas line section, 386 Inner vapor exhaust line, gas line, 400 Precursor delivery system, 420 Rear cover, 442 Valve, 460 Elbow valve, 570 Outlet, 600 Precursor delivery system, 602 Vapor exhaust line, 604 Vapor exhaust line, 620 Rear cover, 640 Conduit, 650 Distribution point, 700 Plasma processing unit, 702 Remote plasma source, 704 Process chamber, 706 Shower head, 708 Gas outlet, 710 Deposition zone, 712 Substrate, 714 Wafer base, 716 Electrostatic chuck, 718 Electrostatic clamp electrode, 720 Electric wire, 722 Heating element, 724 Electric wire, 726 Stem, 728 Coil, 732 Plasma generator controller, 734 Plasma region, 736 Source gas supply unit, 738 Gas supply unit, 740 Silicon-containing precursor supply source, 742 Plasma activating species, 744 Silicon-containing precursor, 748 Outlet, 750 Controller, 752 Processor system, 754 Data system, 760 Precursor delivery system, 772 Substrate, ALD remote plasma, CVD remote plasma

Claims

1. A precursor delivery system for supplying a precursor to a process chamber, wherein the precursor delivery system is The housing includes a front cover, rear cover, top cover, bottom cover, and two side covers, A removable precursor dispensing assembly, which is removably coupled to the housing and configured to supply the precursor to the process chamber, An ampoule configured to receive the precursor and supply it to the process chamber, A first valve assembly fluidly coupled to the ampoule, A first valve fluidly coupled to the first inlet to the ampoule and the precursor source supply section, A second valve fluidly coupled to the second inlet to the ampoule and the source gas supply section, A third valve is fluid-coupled to the outlet and internal vapor discharge line of the ampoule, A first joint between the second valve and the fourth valve, and a fourth valve fluidly coupled to the second joint between the third valve and the fourth valve, A first valve assembly comprising, A removable precursor dispensing assembly comprising, A controller for controlling the operation of the precursor delivery system A precursor delivery system equipped with the following features.

2. The removable precursor dispensing assembly further comprises a second valve assembly, the second valve assembly is A fifth valve fluidly coupled to the second valve and the flow controller, The first valve and the sixth and seventh valves are fluid-coupled to the vacuum source, The precursor source supply unit having the first valve is fluid-coupled to an eighth valve. The precursor delivery system according to claim 1, comprising:

3. The precursor delivery system according to claim 2, wherein the internal steam discharge line bypasses the second valve assembly.

4. The precursor delivery system according to claim 2, wherein the second valve assembly is positioned above the first valve assembly.

5. A vapor discharge line is detachably coupled to the rear cover of the housing and fluidly coupled to the ampoule of the detachable precursor dispensing assembly, A conduit fluidly coupled to the steam discharge line, including a distribution point fluidly coupled to the showerhead of the process chamber, Furthermore, The conduit is located near the bottom of the precursor delivery system or below the precursor delivery system. The precursor delivery system according to claim 1.

6. The precursor delivery system according to claim 1, further comprising a pressure gauge disposed on the outside of the housing, wherein the pressure gauge is fluidly coupled to the conduit.

7. Elbow valve that fluidly connects the inner steam discharge line to the steam discharge line The precursor delivery system according to claim 5, further comprising:

8. The precursor delivery system according to claim 1, wherein the precursor includes a silicon-containing precursor.

9. An apparatus for processing one or more substrates, wherein the apparatus is It comprises one or more process chambers, and each process chamber is A chuck for supporting the circuit board, A precursor delivery system for supplying one or more precursors into the process chamber to form a film, Equipped with, The aforementioned precursor delivery system is The housing includes a front cover, rear cover, top cover, bottom cover, and two side covers, One or more removable precursor dispensing assemblies are removably housed within the housing, each of the one or more removable precursor dispensing assemblies is An ampoule configured to store the aforementioned precursor, A first valve assembly fluidly coupled to the ampoule, A first valve fluidly coupled to the first inlet to the ampoule and the precursor source supply section, A second valve fluidly coupled to the second inlet to the ampoule and the source gas supply section, A third valve is fluid-coupled to the outlet and internal vapor discharge line of the ampoule, A first joint between the second valve and the fourth valve, and a fourth valve fluidly coupled to the second joint between the third valve and the fourth valve, A first valve assembly comprising, A removable precursor dispensing assembly comprising one or more removable precursor dispensing assemblies, A controller for controlling the operation of the aforementioned precursor delivery system, Equipped with, The aforementioned controller, The ampoule receives the precursor from the precursor source supply unit. The carrier gas is flowed from the source gas supply unit to the ampoule to form a mixture containing the precursor and the carrier gas. The mixture is poured from the ampoule into the process chamber. Includes program instructions for, Device.

10. The apparatus according to claim 9, wherein the apparatus is configured for atomic layer deposition, plasma-enhanced atomic layer deposition, chemical vapor deposition, or plasma-enhanced chemical vapor deposition.

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