ICP Source Gas Supply Hub and Nozzle

Abstract

Exemplary structures, methods, and systems for the laminated manufacturing of gas hubs and supply nozzles are disclosed. One exemplary structure includes an integrated gas hub and supply nozzle comprising a gas hub portion and a gas supply nozzle portion. The gas hub portion comprises a plurality of gas inlet paths and one or more plenum chambers. The plurality of gas inlet paths and one or more plenum chambers form a fully recursive gas path. Each of the one or more plenum chambers has one or more outlet holes. The gas supply nozzle portion comprises a plurality of gas passages, each gas passage coupled to one or more outlet holes in each of the one or more plenum chambers, and each gas passage having its respective outlet on the outer surface of the gas supply nozzle portion.

Description

Background

[0001] This specification relates to semiconductor systems, processes, and devices.

[0002] Plasma etching is used in the manufacture of integrated circuits in semiconductor processes. An integrated circuit is formed from a plurality (e.g., two or more) layer structures. Plasma can be formed in a processing environment using different chemical compositions of etching gases (e.g., different gas mixtures). This can improve the accuracy and selectivity of the chemical composition of a specific etching gas with respect to the layer structure to be etched. As integrated circuits are miniaturized and the fine structure and aspect ratio increase, the need for precise etching of layer structures is increasing. Overview

[0003] A plasma processing system includes a gas supply nozzle that supplies an etching gas mixture into a plasma processing chamber. This etching gas mixture is ignited by a plasma source to generate plasma. The charged particles of the plasma are attracted toward the exposed surface of a substrate held in the processing region within the chamber, and an etching process is performed on the exposed surface of the substrate.

[0004] Plasma is formed using a specific plasma source. One type of plasma source is an inductively coupled plasma (ICP) source. The ICP plasma source uses an induction coil to couple high-frequency energy to the etching gas mixture supplied from the gas supply nozzle.

[0005] To supply etching gas to the plasma processing chamber, one or more gas lines supply etching gas to a gas hub having one or more gas outlets to the plasma processing chamber and a supply nozzle. In conventional systems, the gas supply assembly is composed of separate components of the gas hub and the gas supply nozzle, which are combined with each other and configured to provide specific gas flow characteristics. By incorporating an O-ring into the gas supply assembly, different gas regions of the gas hub can be separated, and a gas seal between the gas hub and the gas supply nozzle components can be achieved. In particular, this specification describes a technique relating to a single gas hub and supply nozzle for use in plasma-based processing systems. The single gas hub and supply nozzle comprises a hub section and a supply nozzle section. The hub section comprises one or more plenums formed within the hub body. Each of the one or more plenums is coupled to a corresponding set of gas flow paths in the supply nozzle section without requiring a sealing O-ring between the hub section and the supply nozzle section.

[0006] Gas hubs and supply nozzles can be formed as single components using additive manufacturing technology for designing and manufacturing gas hubs and supply nozzles for use in plasma processing systems. In particular, an integrated gas hub and supply nozzle is provided in which the upper gas hub, lower gas supply nozzle, and one or more gas partition walls are integrated into a single component using additive manufacturing technology. Specifically, by manufacturing one or more gas partition walls as part of the gas supply nozzle structure, O-rings and alignment structures for gas sealing are eliminated.

[0007] Certain aspects of the subject matter described herein can be implemented as structures embodied in a machine-readable medium used in the design process. The structure includes an integrated gas hub and supply nozzle comprising a gas hub and a gas supply nozzle. The gas hub comprises a plurality of gas inlet paths and one or more plenum chambers formed within the body of the gas hub, the plurality of gas inlet paths and one or more plenum chambers forming a fully recursive (circular) gas path. Each of the one or more plenum chambers has one or more outlet holes. The gas supply nozzle comprises one or more gas passages formed within the body of the gas supply nozzle, each gas passage coupled to one or more outlet holes provided in each of the one or more plenum chambers, and each gas passage has an outlet on the outer surface of the gas supply nozzle.

[0008] The structure may contain one or more of the following features:

[0009] In some embodiments, the structure resides on a storage medium as a data format used for exchanging layout data.

[0010] In some embodiments, the structure includes at least one of test data files, characteristic data, verification data, or design specifications.

[0011] In some embodiments, each of the multiple gas inlet paths includes multiple branches, each of which is configured to provide an inlet to each corresponding portion of the plenum chamber and to provide a uniform gas distribution.

[0012] In some embodiments, one or more plenum chambers include a first plenum chamber configured to guide etching gas into a gas flow path within a gas supply nozzle having a first set of outlets, and a second plenum chamber configured to guide etching gas into a gas flow path within a gas supply nozzle having a second set of outlets.

[0013] In some embodiments, the gas supply nozzle section includes a plurality of gas injection passages connecting a first plenum chamber to a plurality of nozzle outlets located at the bottom of the gas supply nozzle section, and a plurality of gas injection passages connecting a second plenum chamber to a plurality of nozzle outlets located on the side wall of the gas supply nozzle section.

[0014] In some embodiments, each of the first plenum chamber and the second plenum chamber includes one or more segments, each segment having a shape formed within the body of the gas hub, and each segment is coupled to at least one gas inlet path of a plurality of gas inlet paths and a plurality of outlet holes.

[0015] In some embodiments, the integrated gas hub and supply nozzle further include one or more temperature monitoring sensors configured to monitor the temperature within the integrated gas hub and supply nozzle.

[0016] Certain embodiments of the subject matter described herein can be implemented as a plasma treatment system. The plasma treatment system comprises an integrated gas hub and supply nozzle, including a gas hub and a gas supply nozzle. The gas hub comprises a plurality of gas inlet paths and one or more plenum chambers formed within the body of the gas hub. The plurality of gas inlet paths and one or more plenum chambers form a fully circulating gas path. Each of the one or more plenum chambers has one or more outlet holes. The gas supply nozzle comprises one or more gas passages formed within the body of the gas supply nozzle. Each gas passage is coupled to one or more outlet holes provided in each of the one or more plenum chambers, and each gas passage has an outlet on the outer surface of the gas supply nozzle.

[0017] The plasma processing system includes one or more of the following features:

[0018] In some embodiments, each of the multiple gas inlet paths includes multiple branches, each of which provides an inlet to each corresponding portion of the plenum chamber and is configured to provide a uniform gas distribution.

[0019] In some embodiments, one or more plenum chambers include a first plenum chamber configured to guide etching gas into a gas passage of a gas supply nozzle section having a first set of outlets, and a second plenum chamber configured to guide etching gas into a gas passage of a gas supply nozzle section having a second set of outlets.

[0020] In some embodiments, the integrated gas hub and supply nozzle further include one or more temperature monitoring sensors configured to monitor the temperature within the integrated gas hub and supply nozzle.

[0021] Specific embodiments of the subject matter described herein can be carried out as methods. The methods include laminating an integrated gas hub and a supply nozzle. Laminating an integrated gas hub and a supply nozzle includes forming a plurality of layers including a gas supply nozzle section. A plurality of layers are formed, each containing one or more gas passages within the gas supply nozzle section and having a predetermined shape. A plurality of layers are formed, each containing a gas hub section having one or more inlet gas ports for connecting to one or more corresponding gas lines. A plurality of layers are formed within the body of the gas hub section, each containing one or more plenum chambers and recurrent gas passages. Furthermore, the gas hub section includes one or more outlet holes in each of the one or more plenum chambers. Each of the one or more gas passages within the gas supply nozzle section is connected to one or more outlet holes in each of the one or more plenum chambers, and each of the one or more gas passages has its own outlet on the outer surface of the gas supply nozzle section.

[0022] The method can include one or more of the following features:

[0023] In some embodiments, one or more plenum chambers include a first plenum chamber configured to guide etching gas into a gas flow path within a gas supply nozzle having a first set of outlets, and a second plenum chamber configured to guide etching gas into a gas flow path within a gas supply nozzle having a second set of outlets.

[0024] In some embodiments, each of the first plenum chamber and the second plenum chamber includes one or more segments, each segment having a shape formed within the body of the gas hub, and each segment is coupled to at least one gas passage and a plurality of outlet holes of the recurrent gas passage.

[0025] The subject matter described herein can be implemented in these embodiments and other embodiments, and one or more of the following advantages can be achieved: Laminated gas hubs and supply nozzles can maintain the function and performance of gas hubs and gas supply nozzles formed from individually manufactured parts. Laminated gas hubs and supply nozzles can also improve gas flow characteristics by providing a 3D printed recurrent gas channel in the hub portion, thereby providing a more uniform and symmetrical gas flow. Furthermore, gas flow characteristics can be improved by eliminating the gas sealing O-ring, which is manufactured as a separate part from a different material than the upper gas hub. The gas sealing O-ring of a gas supply nozzle with individually manufactured parts is unnecessary in an integrated hub and nozzle component because there is no joint part that needs to seal gas leaks. By eliminating the O-ring, problems such as tolerances, floating parts, and particle generation associated with gas sealing O-rings can be eliminated. By forming the gas supply nozzle using laminated manufacturing, the uniformity and symmetry of the gas flow within the gas supply nozzle can be improved. Furthermore, gas supply nozzles manufactured using the additive manufacturing method reduce machining waste, accommodate complex shapes related to gas paths, and shorten turnaround time and manufacturing processes. For example, by using the additive manufacturing process, the number, shape, and configuration of gas flow paths in the gas supply nozzle can be freely designed and manufactured. In addition, the hub can be designed to have various plenum structures, such as increasing the number of gas separation plenums or adjusting the relative positional relationship between plenums within the hub. Moreover, the additive manufacturing method simplifies assembly, reduces alignment problems, and eliminates the need for various gas seals such as O-rings to supply etching gas to the gas supply nozzle.

[0026] In the following disclosure, specific structures fabricated using the disclosed technology are identified, but it will be readily understood that these structures are equally applicable to a variety of other structures such as those found in the described gas hubs and supply nozzles. Thus, the technology should not be construed as limited to only the structures described. Prior to describing the structures according to several embodiments of the technology in this disclosure, one possible structure that can be used in the technology is described. It should be understood that the technology is not limited to the structures described, and the described structures can be used in any number of gas supply components.

Brief Description of the Drawings

[0027] [Figure 1] A schematic cross-sectional view of an exemplary plasma processing chamber is shown. [Figure 2A] ~ [Figure 2E] Cross-sectional views of an exemplary gas hub and supply nozzle formed from a single structure, and embodiments of different portions of the exemplary gas hub and supply nozzle are shown. [Figure 3] A cross-sectional view of the hub portion of an exemplary gas hub and supply nozzle is shown. [Figure 4] Cross-sectional views of the hub portion of a gas hub and supply nozzle of another example are shown. [Figure 5] Cross-sectional views of the hub portion of a gas hub and supply nozzle of another example are shown. [Figure 6A] ~ [Figure 6E] Cross-sectional views of an exemplary gas hub and supply nozzle each formed from a single structure are shown. [Figure 7] A flowchart of an exemplary process for manufacturing a gas hub and supply nozzle is shown. [Figure 8] A schematic diagram of an exemplary computing system that can be used to implement embodiments of the present disclosure.

[0028] Like reference numerals and designations in the various drawings indicate like elements. Detailed Description

[0029] This specification relates to the structure, method, and system of a multilayer manufacturing gas hub and supply nozzle for inductively coupled plasma-based processing systems. The multilayer manufacturing gas hub and supply nozzle provides an integrated structure that combines the functions of both a hub and a nozzle, forming one or more plenums within the hub body to receive an input etching gas and distributing the etching gas from each of the one or more plenums to each gas channel of the gas supply nozzle.

[0030] Laminated gas hubs and supply nozzles can maintain the functionality and performance of gas supply nozzles with individually manufactured parts. Furthermore, laminated gas hubs and supply nozzles can improve gas flow characteristics by incorporating 3D-printed recurrent gas channels that provide a more uniform and symmetrical gas flow, and by eliminating gas sealing O-rings manufactured as separate parts from a different material than the gas hub. Moreover, by using laminated manufacturing, gas hubs and supply nozzles can be configured in complex shapes, including different arrangements of input and outlet gas channels, an additional plenum formed within the main hub, and different gas channel shapes within the gas nozzle section. In some embodiments, the composite gas hub and supply nozzle are all formed from the same ceramic material, such as aluminum oxide (alumina) or yttrium oxide (yttria). In some other embodiments, parts are formed from one material and parts from another. For example, the gas supply nozzle section can be formed from yttria using laminated manufacturing, and the gas hub section can be formed from alumina using laminated manufacturing.

[0031] Figure 1 shows an example of a schematic cross-sectional view of a plasma processing chamber suitable for etching one or more material layers placed on a substrate 103 (also called, e.g., a "wafer") within a processing chamber 100 (e.g., a plasma processing chamber). The processing chamber 100 includes a chamber body 105 that defines a chamber volume 101 in which the substrate can be processed. The chamber body 105 has side walls 112 and a bottom 118 connected to ground 126. The side walls 112 may include a liner 115 to protect the side walls 112 and extend the maintenance cycle interval of the plasma processing chamber 100. The chamber body 105 supports a chamber lid assembly 110 that surrounds the chamber volume 101. The chamber body 105 can be manufactured from, for example, aluminum or other suitable material. A substrate access port 113 is formed through the side wall 112 of the chamber body 105 to facilitate the insertion and removal of the substrate 103 into the plasma processing chamber 100. The access port 113 can connect the substrate processing system to the transport chamber and / or other chambers (not shown), allowing for other processing of the substrates, for example. A pumping port 145 is formed through the bottom 118 of the chamber body 105 and connected to the chamber volume 101. A pumping device is connected to the chamber volume 101 via the pumping port 145 to perform exhaust and pressure control within the processing volume. The pumping device may include one or more pumps and throttle valves.

[0032] The chamber volume 101 includes a processing area 107 (e.g., a station for processing a substrate). A substrate support 135 can be placed in the processing area 107 of the chamber volume 101 to support the substrate 103 during processing. The substrate support 135 may include an electrostatic chuck 122 for holding the substrate 103 during processing. The electrostatic chuck ("ESC") 122 can hold the substrate 103 to the substrate support 135 using electrostatic attraction. The ESC 122 can be powered by a high-frequency (RF) power supply 125 integrated with a matching circuit 124. The ESC 122 may include an electrode 121 embedded in a dielectric. The electrode 121 can be connected to the RF power supply 125 and can provide a bias to attract plasma ions generated from the processing gas in the chamber volume 101 to the ESC 122 and the substrate 103 placed on the pedestal. The RF power supply 125 can be turned on / off, i.e., pulsed, during processing of the substrate 103. The ESC122 may have an isolator 128 to make the sidewalls of the ESC122 less likely to be attracted to the plasma, thereby extending the maintenance life of the ESC122. Furthermore, the substrate support 135 may have a cathode dryer 136 to protect the sidewalls of the substrate support 135 from the plasma gas, thereby extending the maintenance interval of the plasma processing chamber 100.

[0033] The electrode 121 can be coupled to a DC power supply 150. The power supply 150 can supply a chucking voltage of approximately 200 volts to approximately 2000 volts to the electrode 121. The power supply 150 may also include a system controller that controls the operation of the electrode 121 by supplying DC current to the electrode 121 to chucking and dechucking the substrate 103. The ESC 122 may include an internal heater connected to the power supply for heating the substrate. Meanwhile, the cooling base 129 supporting the ESC 122 may include conduits for circulating heat transfer fluid to maintain the temperature of the ESC 122 and the substrate 103 placed on top of it. The ESC 122 can be configured to operate within a temperature range required by the thermal budget of the device being manufactured on the substrate 103. For example, the ESC 122 can be configured to maintain the substrate 103 at a temperature from approximately -150°C or below to approximately 500°C or above, depending on the process being performed. The covering 130 can be placed on the ESC 122 and around the substrate support 135. The covering 130 can be configured to confine etching gas to a desired portion of the exposed upper surface of the substrate 103, while also shielding the upper surface of the substrate support 135 from the plasma environment within the plasma processing chamber 100.

[0034] A gas panel 160 (for example, also referred to herein as a “gas distribution manifold”) is connected to the chamber body 105 via a chamber lid assembly 110 by a gas line 167, and can supply a process gas into the chamber volume 101. The gas panel 160 may include one or more process gas sources 161, 162, 163, 164, and may further include any number of inert gases, non-reactive gases, and reactive gases that can be used in any suitable process. Examples of process gases that can be supplied by the gas panel 160 include, but are not limited to, hydrocarbon-containing gases including methane, sulfur hexafluoride, silicon chloride, silicon tetrachloride, carbon tetrafluoride, and hydrogen bromide. Process gases that can be supplied by the gas panel may include, but are not limited to, argon gas, chlorine gas, nitrogen, helium, or oxygen gas, sulfur dioxide, and any number of additional substances. Furthermore, the process gas may include nitrogen, chlorine, fluorine, oxygen, or hydrogen-containing gases (e.g., BCl3, C2F4, C4F8, C4F6, CHF3, CH2F2, CH3F, NF3, NH3, CO2, SO2, CO, N2, NO2, N2O, H2, etc.) as well as any number of suitable precursors. Combining process gases from process gas sources (e.g., gas sources 161, 162, 163, 164) can form one or more etching gas mixtures. For example, gas panel 160 includes one or more process gas sources specific to oxide-based etching chemical reactions. In another example, gas panel 160 includes one or more process gas sources specific to nitride-based etching chemical reactions.

[0035] The gas panel 160 includes various valves, pressure regulators (not shown), and mass flow controllers (not shown) positioned relative to gas sources 161, 162, 163, and 164, which control the flow rate of the process gas from the gas sources. Valve 166 can control the flow rate of the process gas from gas sources 161, 162, 163, and 164 of the gas panel 160. The operation of the valves, pressure regulators, and / or mass flow controllers can be controlled by controller 165. Controller 165 is operably connected to an electric valve (EV) manifold (not shown) and can control the operation of one or more of the valves, pressure regulators, and / or mass flow controllers. The lid assembly 110 may include a gas supply nozzle section 114, which combines a gas hub and a supply nozzle 174. The gas supply nozzle section 114 may include one or more openings for introducing the process gas into the chamber volume 101. In particular, the processing gas from the gas sources 161, 162, 163, and 164 of the gas panel 160 flows through the gas line 167 to the gas hub section 172, and then flows into the gas supply nozzle section 114. After the processing gas is introduced into the plasma processing chamber 100, energy is supplied to the gas to form a plasma. An antenna 148 (e.g., one or more inductor coils) can be provided adjacent to the plasma processing chamber 100. The antenna power supply 142 supplies power to the antenna 148 via the matching circuit 141, inductively coupling energy (e.g., RF energy) to the processing gas to maintain the plasma formed from the processing gas within the chamber volume 101 of the plasma processing chamber 100. Instead of or in addition to the antenna power supply 142, process electrodes on the underside and / or upper side of the substrate 103 can be used to capacitively couple RF power to the processing gas to maintain the plasma within the chamber volume 101. The operation of the power supply 142 can be controlled by a controller such as the controller 165, which also controls the operation of other components in the plasma processing chamber 100.

[0036] The controller 165 can be used to control the process sequence, adjust the gas flow rate from the gas panel 160 to the plasma processing chamber 100, and control other process parameters. When the software routines are executed by a computing device having one or more memory storage devices and one or more processors (e.g., a central processing unit (CPU)) capable of data communication, the computing device can be transformed into an application-specific computer (e.g., a controller) and the plasma processing chamber 100 can be controlled so that the process is executed in accordance with this disclosure. The software routines can also be stored and / or executed by one or more other controllers that can be associated with the plasma processing chamber 100.

[0037] In some embodiments, at the end of the wafer etching process, an automated or semi-automated robotic manipulator (not shown) can be used to transport the wafer from the substrate support out of the processing chamber (e.g., via the substrate access port 113). For example, the robotic manipulator can transport the wafer to another chamber (or another location) to perform other steps of the manufacturing process.

[0038] Figure 1 describes a processing chamber including substrate supports arranged within processing areas within a chamber volume. However, two or more substrate supports can also be arranged within each processing area (e.g., each processing station) within the same chamber volume. For example, processing chamber 100 can be a tandem processing chamber including two processing areas, each equipped with a substrate support configured to hold each wafer during etching. Processing chamber 100 can include two or more processing areas within a chamber volume 101, and parallel processing of two or more substrates can be easily performed within each processing area. The processing areas can be substantially separated such that the etching process in the first processing area has minimal impact on the etching process in the second processing area, and vice versa.

[0039] Figures 2A to 2E show cross-sectional views of an exemplary gas hub and supply nozzle 200 formed from a single structure using, for example, a lamination method, and embodiments of various parts of the exemplary gas hub and supply nozzle 200. In some embodiments, the gas hub and supply nozzle 200 may be an embodiment of the gas hub and supply nozzle 174 of Figure 1. The gas hub and supply nozzle 200 includes a hub portion 202 and a nozzle portion 204. The nozzle portion 204 may have a cylindrical body. With respect to the processing chamber, the nozzle portion 204 includes a part of the cylindrical body that is placed inside the processing chamber, and the hub portion 202 is located outside the processing chamber. Thus, for example, the chamber lid may contact and surround a part of the outer surface of the nozzle portion 204, and the hub portion 202 may rest on the upper surface of the chamber lid.

[0040] The gas hub section 202 includes a central through-hole 230 aligned with the corresponding through-hole 232 of the nozzle section 204. The gas hub and supply nozzle 200 may include observation windows 234 at specific positions within each through-hole, which can be used, for example, by one or more sensors to monitor a substrate within a processing area.

[0041] The hub section includes an outer plenum chamber 208 and an inner plenum chamber 210. Each plenum chamber 208, 210 is configured to independently receive etching gases. Thus, the gas mixture and pressure supplied to each plenum chamber can be controlled independently. The nozzle section 204 includes a first gas outlet set connected to the inner plenum 210 and a second gas outlet set connected to the outer plenum 208. The first gas outlet set can direct etching gas to the central region of the processing chamber, for example, to control the etching process in the central region of the substrate. Similarly, the second gas outlet set can direct etching gas to the outside or edge region of the processing chamber to control the etching process in the edge region of the substrate.

[0042] Each plenum chamber may consist of one or more segments that provide a recursive gas path. Each plenum chamber may have a different height with respect to the cross-section shown in Figure 2A. For example, the inner plenum chamber 210 may have a higher height than the outer plenum chamber 208. The difference in height allows an inlet path (e.g., inlet path 214) to reach the inner plenum chamber 210 without interfering with the outer plenum chamber 208.

[0043] Each segment of the inner plenum chamber 210 is coupled to a single gas inlet in the hub portion 202 and multiple gas outlets (e.g., gas outlets 216), allowing the input etching gas to pass from the segment through one or more nozzle paths 206. Each of the one or more segments can provide substantially uniform gas distribution and flow uniformity to its respective gas outlet 216.

[0044] Each segment of the outer plenum chamber 208 is coupled to a single gas inlet and multiple gas outlets (e.g., gas outlets 228) of the hub 202, allowing the input etching gas to pass through one or more nozzle paths 212 from the segment. Each of the one or more segments can provide substantially uniform gas distribution and flow uniformity to each gas outlet 228. Figure 2A shows both nozzle paths 206 and 212, but in some embodiments, the nozzle paths 212 may be in a different plane from the nozzle paths 206. That is, several cross-sections of the gas hub and supply nozzle 200 can intersect zero, one, or more of the nozzle paths 206 and 212, depending on how the nozzle paths 206 and 212 are arranged.

[0045] Each segment is connected to a single gas inlet having a path extending from the segment to the hub inlet (e.g., the hub portion 202 side). For example, in one embodiment, the inner plenum chamber 210 can be formed from four separate segments. Two segments on the first side 218 of the hub portion 202 can be supplied by separate inlet paths 214 entering from the first side 218 of the hub portion 202, and two segments on the second side 220 of the hub portion 204 can be supplied by separate inlet paths 222 entering from the second side 220 of the hub portion 204. In another embodiment, the outer plenum chamber 208 can be formed from four separate segments. Two segments on the first side 218 of the hub portion 202 can be supplied by separate inlet paths 224 entering from the first side 218 of the hub portion 202, while two segments on the second side 220 of the hub portion 204 can be supplied by separate inlet paths 226 entering from the second side 220 of the hub portion 204.

[0046] Each plenum chamber can be formed as a single segment in an annular shape within the body of the hub portion 202. However, other shapes can also be formed using an additive manufacturing process. When the plenum chamber has multiple segments, each segment can be formed substantially arched, linear, or meandering. The shape of the segments can change the position of the outlet gas path, providing a specific distribution of etching gas within the processing chamber.

[0047] The nozzle section 204 includes multiple nozzle paths 206, supplying gas from the inner plenum chamber 210 of the gas hub 202 to the processing chamber, for example, through a central nozzle outlet located at the bottom of the nozzle section 204. In particular, each gas outlet 216 of the inner plenum chamber 210 is connected to a different nozzle path 206.

[0048] Furthermore, the nozzle section 204 may include multiple nozzle paths 212, which can supply gas from the outer plenum chamber 208 of the gas hub 202 to the processing chamber, for example, via side nozzle outlets located on the side walls of the nozzle section 204. In particular, each gas outlet 228 of the outer plenum chamber 208 is connected to a different nozzle path 212.

[0049] Furthermore, Figure 2A shows the side nozzle outlets exemplified in enlarged views 260 and 262, respectively. In enlarged view 260, the side nozzle outlets 264 are connected to the nozzle path 212. Each side nozzle outlet 264 is approximately perpendicular to the nozzle path 212 and arranged in an array. For example, nine side nozzle outlets 264 can be arranged as shown in array 268. In enlarged view 262, the side nozzle outlets 266 are connected to the nozzle path 212. Each side nozzle outlet 266 intersects the nozzle path 212 diagonally and is arranged in array 269 in a similar pattern to array 268.

[0050] Figure 2B shows an example of an outer region 270 of the processing chamber connected to the nozzle path 212 via a side nozzle outlet located on the side wall of the nozzle section 204, and an example of a central region 272 of the processing chamber connected to the nozzle path 206 via a central nozzle outlet located at the bottom of the nozzle section 204. The nozzle paths 206 and 212, together with their corresponding central or side nozzle outlets, can improve adjustability by supplying gas to different regions within the processing chamber, such as the outer region 270 and the central region 272. In some embodiments, the central region 272 covers a circular region of the substrate to be processed, and the outer region 270 covers a ring-shaped region of the substrate surrounding the circular region of the central region. However, other cover regions are possible depending on the configuration of the nozzle outlets and the shape of the substrate.

[0051] Figure 2C shows an example of a helical nozzle path 280 that can be used as a nozzle path 206 or 212 of the nozzle section 204 and can be laminated. Other shapes of nozzle paths can also be used for nozzle paths 206 or 212. A curved nozzle path 280 (e.g., a helical tube) can avoid a direct line of sight from the plasma region to the plenum chambers 208 and 210. The specific shape of the nozzle path 206 or 212 depends on the number of holes leading to the central region 272 and the number of holes leading to the outer region 270. The helical nozzle path 280 helps to improve the conductance path compared to a straight nozzle path. Complex nozzle paths such as the helical nozzle path 280 can be laminated if at least the supply nozzle section of the gas hub and supply nozzle 200 is laminated as a single structure.

[0052] Figure 2D shows recurrent gas channels 290 and 292 for inlet paths 224 and 222. Etching gas from the gas port can be guided to nozzle paths 212 and 206, respectively, using recurrent gas channels such as 290 and 292. The recurrent gas channels 290 and 292 can recursively divide the gas distribution and improve the uniformity of the gas distribution within nozzle paths 206 and 212. For example, gas channel 290 starts from a single inlet and is divided twice to form a total of four inlets to the corresponding plenum chambers. In some embodiments, each pair of gas channels enters the corresponding plenum chamber at a 45-degree interval. Furthermore, these recurrent gas channels can be 3D printed at different heights within the hub section 202.

[0053] Figure 2E shows examples of four nozzle exit patterns 240, 242, 244, and 246 at the bottom of the nozzle section 204. These different nozzle exit patterns can guide the etching gas to different parts of the processing chamber. In particular, at the endpoint of each nozzle pass 206, on the surface of the nozzle section 204, a specific nozzle exit pattern can be formed instead of a simple circular opening. The exit patterns may be the same for each nozzle pass, or one or more may be different. Examples of exit patterns 240 and 242 show starburst-type patterns. Example of exit pattern 244 shows a linear spiral section, while pattern 246 shows a spiral pattern. When the nozzle section 204 is formed using an additive manufacturing method, these exit patterns can be fabricated for each nozzle pass during the additive manufacturing process.

[0054] Figure 2E also shows two thermocouples 236 placed in the hub portion 202 when the gas hub and supply nozzle 200 are laminated. In some embodiments, different sensors can be placed in the hub portion 202 or the nozzle portion 204 to collect different measurements during the etching process. Temperature monitoring sensors (e.g., thermocouples 236) can be placed in the laminated hub portion 202 or the nozzle portion 204 to measure the temperature inside the hub portion 202 or the nozzle portion 204 during the etching process.

[0055] In some embodiments, the gas hub and nozzle 200 are formed as a single structure by lamination manufacturing, so that the gas path from the inlet to the nozzle outlet can be formed without joining the components together. This eliminates the need to provide gas seals such as O-rings in different locations within the structure. Furthermore, since the gas path is aligned during manufacturing, misalignment of the gas path that would occur if individual parts with manufacturing variations were joined together is avoided.

[0056] Figure 3 shows a cross-sectional view 300 of the hub portion 202 of the gas hub and supply nozzle 200 in Figure 2A. The gas ports 302 can supply etching gas to the outer plenum 306 of the hub portion via gas paths 314, dividing the gas distribution from each gas port 302 into two gas channels. Although only two pairs of paths are shown for illustrative purposes, each gas channel 314 can be further divided into two gas channels, and this gas channel division process can be continued to improve the uniformity of the gas distribution within the outer plenum 306. These divided gas channels form a series of recurrent gas channels to the outer plenum 208 in Figure 2A, as shown in the recurrent gas channel 290 in Figure 2D and described above. In some embodiments, one or more divided gas channels are directed to a specific segment of the outer plenum chamber 306, or to different parts of a single-segment plenum chamber. By using additive manufacturing technology, each of these gas channels 314 can be fabricated, and the gas can be guided to specific locations in the outer plenum 306, providing a uniform gas distribution within the outer plenum 306.

[0057] The gas port 304 can supply etching gas to the inner plenum chamber 312 of the hub via the gas path 316. The recurrent gas flow path within the inner plenum chamber can be formed in the same manner as the outer plenum chamber described above, as shown in the recurrent gas flow path 292 in Figure 2D. The inner plenum chamber 312 and the outer plenum chamber 306 can be separated by a gas partition wall (e.g., gas partition wall 318). The outer plenum chamber 306 can distribute etching gas to the gas hub and side nozzle outlets located on the side walls of the nozzle portion 204 of the supply nozzle 200 via the nozzle path 212 in Figure 2A. The inner plenum chamber 312 can distribute etching gas to the gas hub and central nozzle outlet located at the bottom of the nozzle portion 204 of the supply nozzle 200 via the nozzle path 206 in Figure 2A. The outlet 308 is connected via the nozzle path 206 to the central nozzle outlet located at the bottom of the gas hub and the nozzle portion 204 of the supply nozzle 200. The outlet 310 is connected via the nozzle path 212 to side nozzle outlets located on the side wall of the nozzle section 204 of the gas hub and supply nozzle 200. The side nozzle outlets allow for specific distribution of gas to the processing chamber. The position of each side nozzle outlet can vary along the side wall of the nozzle section 204, and multiple side nozzle outlets may be provided on the side wall.

[0058] In some embodiments, the etching gas and gas pressure can be controlled independently for each gas port in Figure 3. As a result, the pressure and composition of the etching gas in each plenum chamber can be controlled independently. This independent control allows for more precise control over the etching process. For example, a central nozzle outlet located at the bottom of the nozzle section of the gas hub and supply nozzle can direct the etching gas to a portion of the processing chamber. This guides charged particles to the central region of the substrate as the etching gas is ionized by the plasma. Similarly, side nozzle outlets located on the side walls of the nozzle section of the gas hub and supply nozzle can direct the etching gas to a portion of the processing chamber. This guides charged particles to the edge region of the substrate as the etching gas is ionized by the plasma. The etching rate may differ between the central and edge regions of the substrate. Independent plenum chambers supplying etching gas independently help control the etching rate and ensure consistent etching across the entire substrate.

[0059] Figure 3 shows an example of a gas hub and supply nozzle with two plenum chambers, but other modifications are possible. For example, more plenum chambers, such as inner, intermediate, and edge plenum chambers, can be formed within the hub body. Etching gas can be supplied independently to each of these three plenum chambers and then supplied to the processing chamber.

[0060] Figure 4 shows a cross-sectional view of the hub portion of another gas hub and supply nozzle. Similar to Figure 3, Figure 4 shows an etching gas distribution mechanism from the gas port of the hub portion to one or more gas nozzle outlets of the nozzle portion via multiple gas paths within the nozzle portion connected to the corresponding plenum chamber of the hub portion. For example, etching gas can pass from the gas port 420 through a gas path 422 connected to an intermediate plenum chamber 418 to a central gas nozzle outlet at the bottom of the nozzle portion of the gas hub and supply nozzle. The intermediate plenum chamber 418 has an outlet 424 connected to a central gas nozzle outlet at the bottom of the nozzle portion of the gas hub and supply nozzle via a nozzle path (e.g., nozzle path 206 in Figure 2A). However, unlike the hub portion of Figure 3 which has two plenum chambers 306 and 312, the hub portion of Figure 4 has three plenum chambers 406, 412, and 418. Each of the three plenum chambers 406, 412, and 418 has its own outlet, which is connected via a corresponding nozzle path to a central gas nozzle outlet located at the bottom of the nozzle section of the gas hub and supply nozzle, or to a side gas nozzle outlet located on the side wall of the nozzle section of the gas hub and supply nozzle.

[0061] Figure 5 shows a cross-sectional view of the hub portion of another gas hub and supply nozzle. Similar to Figure 4, Figure 5 shows an etching gas distribution mechanism from the gas port of the hub portion to one or more gas nozzle outlets of the nozzle portion via multiple gas paths within the nozzle portion connected to the corresponding plenum chamber of the hub portion. For example, etching gas can pass from the gas port 526 through a gas path 528 connected to the innermost plenum chamber 532, and through the central gas nozzle outlet at the bottom of the nozzle portion of the gas hub and supply nozzle. The plenum chamber 532 has an outlet 530 connected to the central gas nozzle outlet at the bottom of the nozzle portion of the gas hub and supply nozzle via a nozzle path (e.g., nozzle path 206 in Figure 2A). However, unlike the hub portion of Figure 4 which has three plenum chambers 406, 412, and 418, the hub portion of Figure 5 has four plenum chambers 506, 512, 518, and 532. Each of the four plenum chambers 506, 512, 518, and 532 has an outlet that is connected via a corresponding nozzle path to a central gas nozzle outlet at the bottom of the nozzle section of the gas hub and supply nozzle, or to a side gas nozzle outlet on the side wall of the nozzle section of the gas hub and supply nozzle.

[0062] Figures 6A to 6E show exemplary cross-sectional views of gas hubs and supply nozzles formed from a single structure. Each gas hub and supply nozzle has a hub portion and a nozzle portion, for example, 602 and 604 in Figure 6A, 606 and 608 in Figure 6B, 610 and 612 in Figure 6C, 614 and 616 in Figure 6D, and 618 and 620 in Figure 6E. Each gas hub and supply nozzle can have its own gas path pattern, as shown in Figures 6A to 6C. In particular, Figure 6A shows a straight gas path and a curved nozzle tip. Figure 6B shows a gas path that branches into multiple outlet paths near the nozzle surface. Also, Figure 6C shows a gas path that branches into multiple outlet paths, but with a large spacing between each outlet path. An example of a curved nozzle end face is shown in Figures 6A to 6C. Other nozzle shapes are also possible. For example, Figure 6D shows a nozzle tip with a flat end face and a vertical side wall joined with a concave surface. Figure 6E shows a nozzle tip having a flat end face and a vertical side wall joined to an inclined surface. Although not shown, Figures 6D and 6E can each have their own unique gas path patterns as shown in Figures 6A to 6C.

[0063] As described above, the gas hub and supply nozzle can be manufactured using additive manufacturing technology. This allows the gas hub and supply nozzle to be formed as a single structure, eliminating the need for gas sealing O-rings used when assembling separately manufactured hub and nozzle sections to form the gas hub and supply nozzle. When used in an ICP system, the gas hub and supply nozzle 200 can be manufactured from a dielectric material such as alumina (e.g., Al2O3) or yttria (e.g., Y2O3). In some embodiments, the gas hub and supply nozzle are additively manufactured using alumina (e.g., Al2O3), and then, after the gas hub and supply nozzle are additively manufactured, the outer surface of the nozzle section 204, which is exposed to plasma in the plasma processing chamber, can be coated with yttria (e.g., Y2O3). This additional coating step can reduce erosion by the plasma environment and extend the life of the gas hub and supply nozzle. In some other embodiments, the gas hub and supply nozzle are manufactured in a laminated form, with alumina (e.g., Al2O3) used for the hub portion 202 and yttria (e.g., Y2O3) used for the nozzle portion 204.

[0064] In some embodiments, the overall structure of the gas hub and supply nozzle, such as the gas flow path and outlet gas hole, is formed using lamination. In other embodiments, lamination is enhanced by subsequent manufacturing processes. For example, the nozzle portion 204 is laminated from a solid surface, and then the outlet gas hole is added, for example, by laser drilling. The gas hub and supply nozzle formed by lamination may include one or more regions incorporating a filling pattern that maintains predetermined strength and rigidity while reducing the material density within the structure. The filling pattern can provide repeating structures such as a grid structure separated by hollow spaces, including a lattice structure, a triangular structure, etc.

[0065] In some embodiments, a computer-aided design (CAD) model of the gas hub and feed nozzle is first created, and then the information of each layer is mapped using a slicing algorithm. The layers begin with a thin distribution of powder spread across the surface of the powder bed. Next, a selected binder material selectively binds the particles where the gas hub and feed nozzle are formed. Then, a piston supporting the powder bed and the part being formed descends, forming the next powder layer. The same process is repeated each time a layer is formed, and a final heat treatment fabricates the gas hub and feed nozzle. Because 3D printing allows for localized control of material composition, microstructure, and surface texture, this method enables the creation of a variety of shapes that were previously impossible.

[0066] In some embodiments, the gas hub and supply nozzle described herein can be represented in a data structure readable by a computer rendering device or computer display device. Figure 8 is a schematic diagram of an exemplary computing system 800 that can be used to implement an implementation of the present disclosure. In some embodiments, memory 820 is a computer-readable medium that can contain data structures representing the gas hub and supply nozzle. The data structure is a computer file and can contain information about the structure, material, texture, physical properties, or other properties of one or more articles. The data structure can also contain code, such as computer executable code or device control code, that performs selected functions of the computer rendering device or computer display device. The data structure can be stored in a computer-readable medium. The computer-readable medium can include a physical storage medium such as magnetic memory, a floppy disk, or any available physical storage medium. The physical storage medium is readable by an exemplary computer system 400, and the gas hub and supply nozzle represented by the data structure can be rendered on a computer screen or on a physical rendering device that can be an additive manufacturing device such as a 3D printer.

[0067] In some embodiments, by laminating the gas hub and supply nozzle, variations in the manufacturing of individual parts of the gas hub and supply nozzle, as well as the waste of machining, handling, and tools associated with the manufacturing of individual parts of the gas hub and supply nozzle, can be avoided. Furthermore, by using lamination manufacturing, the gas hub and supply nozzle are manufactured as a single integrated structure, eliminating the need for O-rings for gas sealing, thus reducing particle generation. Consequently, the gas hub and supply nozzle are free of floating parts and associated tolerances.

[0068] In some embodiments, laminated gas hubs and supply nozzles can accommodate complexly shaped recurrent gas flow paths within the hub. Furthermore, laminated gas hubs and supply nozzles can accommodate different configurations of nozzle paths 206 and 212 within the nozzle, as well as associated gas nozzle outlets located on the side walls or bottom of the nozzle. Laminated manufacturing reduces turnaround time and process steps for manufacturing gas hubs and supply nozzles. Additionally, laminated manufacturing of gas hubs and supply nozzles can solve problems such as chipping and detachment of the nozzle neck.

[0069] In some embodiments, different sensors can be placed in the hub portion 202 or the nozzle portion 204 to collect different measurements during the etching process. For example, temperature monitoring sensors such as thermocouples can be placed in the laminated hub portion 202 or nozzle portion 204 to measure the temperature inside the hub portion 202 or nozzle portion 204 during the etching process. Figure 2E shows two thermocouples placed in the hub portion 202 when the gas hub and supply nozzle 200 are laminated.

[0070] Figure 7 shows a flow chart of an exemplary process 700 for manufacturing a gas hub and a feed nozzle (for example, one used in a plasma-based processing system). For convenience, process 700 is described in relation to an additive manufacturing system that performs at least some steps of the process.

[0071] The additive manufacturing system forms multiple layers, including a gas supply nozzle section (702). The additive manufacturing system receives a data structure representing the gas supply nozzle section from a computer system and can use that data structure to form multiple layers of the gas supply nozzle section.

[0072] The additive manufacturing system includes one or more gas passages within the gas supply nozzle section to form a multilayer having a predetermined shape (704). The one or more gas passages can correspond to the nozzle outlets described above with respect to Figures 2A to 4. In particular, outlet holes for each gas passage can be formed on the outer surface of the gas supply nozzle section, intersecting the bottom or side wall of the gas supply nozzle section. Each of the one or more gas passages extends to the top of the gas supply nozzle section. The one or more gas passages can be formed into various three-dimensional shapes. Furthermore, the cross-section of each gas passage can have a specific shape, such as circular, spiral, square, U-shaped, trapezoidal, etc.

[0073] The additive manufacturing system forms multiple layers, each including a gas hub section having one or more input gas ports for connecting to one or more corresponding gas lines (706). The additive manufacturing system can receive a data structure representing the gas hub section from a computer system and use that data structure to form multiple layers of the gas hub section. The layers of the gas hub section can be additively manufactured as an extension of the upper surface of the gas supply nozzle section.

[0074] The additive manufacturing system forms multiple layers within the main body of the gas hub, each containing one or more plenum chambers and recursive gas flow paths (708). Each of the one or more plenum chambers has an outlet hole that connects to the gas flow path of the gas supply nozzle. As described above, one or more paths are provided from the input port hole of the gas hub to a specific plenum chamber.

[0075] Multiple layers can also be formed in different directions. For example, using an additive manufacturing system, multiple layers can be formed in reverse order, with the layers forming the gas hub being formed first. Subsequently, the gas supply nozzle can be additively manufactured on top of the gas hub.

[0076] Figure 8 shows a schematic diagram of an exemplary computing system 800. System 800 can be used for operations described in relation to the implementations described herein. For example, system 800 can be included in any or all of the computing systems described herein. System 800 includes a processor 810, memory 820, storage device 830, and input / output device 840. Components 810, 820, 830, and 840 are interconnected using a system bus 850. The processor 810 can process instructions executed within system 800. In some embodiments, the processor 810 is a single-threaded or multi-threaded processor. The processor 810 can process instructions stored in memory 820 or storage device 830 and display graphical information for a user interface on input / output device 840.

[0077] Memory 820 stores information within the system 800. In some embodiments, memory 820 is a computer-readable medium. Memory 820 is a volatile memory unit. Memory 820 is a non-volatile memory unit. A storage device 830 can provide large-capacity storage to the system 800. The storage device 830 is a computer-readable medium. The storage device 830 may be a floppy disk device, a hard disk device, an optical disk device, or a tape device. An input / output device 840 provides input / output operations to the system 800. The input / output device 840 includes a keyboard and / or a pointing device. The input / output device 840 includes a display device for displaying a graphical user interface.

[0078] This specification includes details of many specific embodiments, but these are not intended to limit the scope of the claims and should be interpreted as descriptions of features specific to a particular embodiment. Certain features described herein in the context of individual embodiments may also be implemented in combination in a single embodiment. Conversely, various features described in the context of a single embodiment may also be implemented individually or in any subcombination in multiple embodiments. Furthermore, even if the aforementioned features are described as operating in a particular combination and were initially claimed as such, in some cases one or more features may be removed from the claimed combination, and the claimed combination may cover a subcombination or a variation of a subcombination.

[0079] In this disclosure, the terms “one,” “one,” or “it” are used to include one or more unless the context clearly indicates otherwise. The term “or” is used to mean a non-exclusive “or” unless otherwise specified. The statement “at least one of A and B” is synonymous with “A, B, or A and B.” Furthermore, it should be understood that any expressions or terms used in this disclosure, unless otherwise defined, are for illustrative purposes only and not limiting. The use of section headings is intended to improve the readability of the document and should not be interpreted as limiting. Information related to a section heading may be found within or outside that particular section.

[0080] As used in this disclosure, the terms “about” or “approximately” may allow for some variation in a value or range, such as within 10%, 5%, or 1% of the stated limit of the stated value or range.

[0081] As used in this disclosure, the term “substantially” means the majority or most, including at least about 50%, 60%, 70%, 80%, 90%, 95%, 96%, 97%, 98%, 99%, 99.5%, 99.9%, 99.99%, or at least about 99.999% or more.

[0082] Values ​​expressed in range format must be interpreted flexibly to include not only the numerical limits explicitly stated as range boundaries, but also all individual numerical values ​​or subranges within that range, as if each numerical value and subrange were explicitly stated. For example, the range "0.1% to approximately 5%" or "0.1% to 5%" should be interpreted to include not only approximately 0.1% to approximately 5%, but also individual values ​​within the indicated range (e.g., 1%, 2%, 3%, and 4%) and subranges (e.g., 0.1% to 0.5%, 1.1% to 2.2%, and 3.3% to 4.4%). The notation "X to Y" has the same meaning as "approximately X to approximately Y" unless otherwise specified. Similarly, the notation "X, Y, or Z" has the same meaning as "approximately X, approximately Y, or approximately Z" unless otherwise specified.

[0083] Specific embodiments of the subject matter have been described. Other embodiments, modifications, and combinations of the described embodiments are included in the following claims, as will be obvious to those skilled in the art. Even if operations are shown in a particular order in the drawings or claims, this should not be understood as requiring that such operations be performed in a specific illustrated order or sequence to obtain the desired result, or that all illustrated operations be performed (some operations may be interpreted as optional). In certain circumstances, multitasking or parallel processing (or a combination of multitasking and parallel processing) may be advantageous and performed in a manner deemed appropriate.

[0084] Furthermore, the separation or integration of various system modules and components in the embodiments described above should not be understood as requiring such separation or integration in all embodiments. The components and systems described can generally be integrated or packaged into multiple products.

[0085] Accordingly, the embodiments described above do not define or limit this disclosure. Other modifications, substitutions, and alterations are also possible without departing from the spirit and scope of this disclosure.

Claims

1. A structure embodied in a machine-readable medium used in the design process, the structure including an integrated gas hub and a supply nozzle, the integrated gas hub and supply nozzle are This is the gas hub section, Multiple gas inlet paths and one or more plenum chambers are formed within the main body of the gas hub section that forms a fully recursive gas path. A gas hub section having one or more outlet holes in each of one or more plenum chambers, A gas supply nozzle unit comprising one or more gas passages formed within the body of the gas supply nozzle unit, each gas passage being connected to one or more outlet holes of one or more plenum chambers, and each gas passage having its respective outlet on the outer surface of the gas supply nozzle unit.

2. The structure according to claim 1, which exists on a storage medium as a data format used for exchanging layout data.

3. The structure according to claim 1, comprising at least one of a test data file, characteristic data, verification data, or design specifications.

4. The structure according to claim 1, wherein the gas hub portion is formed from a first dielectric material.

5. The structure according to claim 4, wherein the gas supply nozzle portion is formed from a first dielectric material or a second dielectric material different from the first dielectric material.

6. The structure according to claim 1, wherein each of the multiple gas inlet paths comprises multiple branches, each of which provides input to each corresponding portion of the plenum chamber and is configured to provide a uniform gas distribution.

7. The structure according to claim 4, wherein the outer surface of the gas supply nozzle is coated, and the coating is made of a third material, the third material being different from the first dielectric material.

8. The structure according to claim 1, wherein one or more plenum chambers include a first plenum chamber configured to guide etching gas into a gas passage in a gas supply nozzle section having a first outlet set, and a second plenum chamber configured to guide etching gas into a gas passage in a gas supply nozzle section having a second outlet set.

9. The gas supply nozzle section comprises a plurality of gas injection passages connecting a first plenum chamber to a plurality of nozzle outlets located at the bottom of the gas supply nozzle section, according to claim 8.

10. The gas supply nozzle section further comprises a plurality of gas injection passages connecting a second plenum chamber to a plurality of nozzle outlets arranged on the side wall of the gas supply nozzle section, according to claim 9.

11. The structure according to claim 8, wherein each of the first plenum chamber and the second plenum chamber comprises one or more segments, each segment having a shape formed within the body of the gas hub, and each segment is coupled to at least one gas inlet path and a plurality of outlet holes of a plurality of gas inlet paths.

12. The structure according to claim 1, wherein the integrated gas hub and supply nozzle comprises one or more temperature monitoring sensors configured to monitor the temperature within the integrated gas hub and supply nozzle.

13. The structure according to claim 1, wherein at least one of the one or more gas paths is a nonlinear path that obstructs the line of sight from the corresponding outlet on the outer surface of the gas supply nozzle to the corresponding outlet hole in the corresponding plenum chamber.

14. A plasma processing system comprising an integrated gas hub and a supply nozzle, wherein the integrated gas hub and the supply nozzle are This is the gas hub section, Multiple gas inlet paths and one or more plenum chambers are formed within the main body of the gas hub section that forms a fully recursive gas path. A gas hub section having one or more outlet holes in each of one or more plenum chambers, A plasma processing system comprising a gas supply nozzle unit, the gas supply nozzle unit having one or more gas passages formed within the main body of the gas supply nozzle unit, each gas passage being connected to one or more outlet holes of one or more plenum chambers, and each gas passage having its own outlet on the outer surface of the gas supply nozzle unit.

15. The plasma processing system according to claim 14, wherein each of the multiple gas inlet paths comprises multiple branches, each of which is configured to provide input to each corresponding portion of the plenum chamber and to provide a uniform gas distribution.

16. The plasma processing system according to claim 14, wherein one or more plenum chambers include a first plenum chamber configured to guide etching gas into a gas flow path in a gas supply nozzle section having a first outlet set, and a second plenum chamber configured to guide etching gas into a gas flow path in a gas supply nozzle section having a second outlet set.

17. The plasma processing system according to claim 14, further comprising one or more temperature monitoring sensors configured to monitor the temperature within the integrated gas hub and supply nozzle.

18. A process for manufacturing an integrated gas hub and supply nozzle in a laminated form, A process of forming multiple layers including a gas supply nozzle section, A process of forming multiple layers having a defined shape, which include one or more gas flow paths within the gas supply nozzle section, A step of forming multiple layers including a gas hub section having one or more inlet gas ports for connecting to one or more corresponding gas lines, The process includes forming multiple layers within the main body of the gas hub section, each layer containing one or more plenum chambers and a recurrent gas flow path. The gas hub section has one or more outlet holes in each of the one or more plenum chambers. A method comprising the step of laminating an integrated gas hub and supply nozzle having, each of the one or more gas passages in a gas supply nozzle section, connected to one or more outlet holes in each of the one or more plenum chambers, and each of the one or more gas passages having its respective outlet on the outer surface of the gas supply nozzle section.

19. The method according to claim 18, wherein one or more plenum chambers include a first plenum chamber configured to guide etching gas into a gas passage in a gas supply nozzle having a first set of outlets, and a second plenum chamber configured to guide etching gas into a gas passage in a gas supply nozzle having a second set of outlets.

20. The method according to claim 19, wherein each of the first plenum chamber and the second plenum chamber comprises one or more segments, each segment having a shape formed within the body of the gas hub, and each segment is coupled to at least one gas passage and a plurality of outlet holes of the recurrent gas passage.

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