LED devices

Abstract

This invention relates to an LED device and an LED assembly. It includes a light-emitting unit and a package layer provided on the light-emitting unit so as to cover the light-emitting unit, protecting the light-emitting unit and allowing light emitted from the light-emitting unit to pass through and be emitted.

Description

Technical Field

[0004] , ,

[0005] ,

[0001] The present invention relates to the field of light emitting diodes (LEDs), particularly to LED devices and LED assemblies.

Background Art

[0002] LEDs are widely used in various fields such as lighting and optical signals. An LED chip is generally composed of two semiconductor layers and an active layer located between the two semiconductor layers. The two semiconductor layers are a P-type semiconductor layer and an N-type semiconductor layer respectively, and the active layer is located between the P-type semiconductor layer and the N-type semiconductor layer as a light emitting layer. The material of the P-type semiconductor layer is generally a semiconductor material doped with aluminum or gallium, the material of the N-type semiconductor is generally a semiconductor material doped with phosphorus, and the active layer is generally a gallium arsenide or gallium arsenide material. Due to the constraints of the materials used and the formation process, LED chips are relatively fragile and are easily damaged and have low reliability when used as light emitting units in various fields such as lighting and optical signals.

Summary of the Invention

Problems to be Solved by the Invention

[0003] In view of the above-mentioned drawbacks of the prior art, the object of the present invention is to provide an LED device and an LED assembly aiming to solve the problems of the prior art that LED chips are relatively fragile, easily damaged during use, and have low reliability.

Means for Solving the Problems

[0004] To solve the above problems, the present invention provides an LED device including a light emitting unit and a package layer provided on the light emitting unit so as to cover the light emitting unit, and through which light emitted from the light emitting unit is transmitted and radiated.

[0005] [[ID=Based on a similar patent application concept, the present invention also provides an LED assembly comprising a circuit board and the LED device provided on the circuit board. Effects of the present invention

[0006] The beneficial effects are as follows:

[0007] The LED devices and LED assemblies provided in this invention include a light-emitting unit, which may include, for example, an LED chip and a package layer provided on the light-emitting unit so as to cover the light-emitting unit, through which light emitted from the light-emitting unit is transmitted and radiated, and the light-emitting unit is covered and protected by the package layer, thereby improving reliability. [Brief explanation of the drawing]

[0008] [Figure 1-1] This is a schematic diagram of the spectra of mainstream light sources in related technologies. [Figure 1-2] This is a schematic diagram of the spectrum of a typical Ra90 light source in related technologies. [Figure 1-3] This is a schematic diagram comparing the spectra of mainstream light sources in related technologies, typical Ra90 light sources, and natural light. [Figure 2] This is a schematic diagram of the structure of an example of an LED device provided in Embodiment 1 of the present invention. [Figure 3-1] This is a schematic diagram of another structure of the LED device provided in Embodiment 1 of the present invention. [Figure 3-2] This is yet another schematic diagram of the LED device provided in Embodiment 1 of the present invention. [Figure 3-3] This is a schematic diagram of a further structure of the LED device provided in Embodiment 1 of the present invention. [Figure 3-4] This is a schematic diagram of a further structure of the LED device provided in Embodiment 1 of the present invention. [Figure 3-5] This is a schematic diagram of a further structure of the LED device provided in Embodiment 1 of the present invention. [Figure 4-1] This is a schematic diagram of a further structure of the LED device provided in Embodiment 1 of the present invention. [Figure 4-2] This is a schematic diagram of a further structure of the LED device provided in Embodiment 1 of the present invention. [Figure 4-3] This is a schematic diagram of a further structure of the LED device provided in Embodiment 1 of the present invention. [Figure 5-1] This is a schematic diagram of the spectrum of the combined blue light LED chip unit provided in Embodiment 1 of the present invention. [Figure 5-2] This is a schematic diagram of the spectrum of the LED device provided in Embodiment 1 of the present invention at a color temperature of 5000K. [Figure 5-3] This is a schematic diagram of the Rf-Rg of the LED device provided in Embodiment 1 of the present invention. [Figure 5-4] This is a schematic diagram of the Rf hue provided in Embodiment 1 of the present invention. [Figure 5-5] This is a schematic diagram of the color vector of a conventional LED device provided in Embodiment 1 of the present invention. [Figure 5-6] This is a schematic diagram of the color vector of the LED device provided in Embodiment 1 of the present invention. [Figure 5-7] This is a schematic diagram comparing the spectra of the LED devices provided in Embodiment 1 of the present invention. [Figure 5-8] This is a schematic diagram of the spectrum of the LED device provided in Embodiment 1 of the present invention at a color temperature of 1700K. [Figure 5-9] This is a schematic diagram of the spectrum of the LED device provided in Embodiment 1 of the present invention at a color temperature of 2700K. [Figure 5-10] This is a schematic diagram of the spectrum of the LED device provided in Embodiment 1 of the present invention at a color temperature of 3000K. [Figure 5-11] This is a schematic diagram of the spectrum of the LED device provided in Embodiment 1 of the present invention at a color temperature of 4000K. [Figure 5-12] This is a schematic diagram of the spectrum of the LED device provided in Embodiment 1 of the present invention at a color temperature of 5700K. [Figure 5-13]It is a schematic diagram of the spectrum of the LED device provided in Example 1 of the present invention at a color temperature of 6500K. [Figure 5-14] It is a schematic diagram of the spectrum of the LED device provided in Example 1 of the present invention at a color temperature of 13000K. [Figure 6-1] It is a schematic structural diagram of an example of the LED device provided in Example 2 of the present invention. [Figure 6-2] It is another schematic structural diagram of the LED device provided in Example 2 of the present invention. [Figure 6-3] It is yet another schematic structural diagram of the LED device provided in Example 2 of the present invention. [Figure 6-4] It is a schematic diagram of the spectrum of the combined blue light LED chip set provided in Example 2 of the present invention. [Figure 6-5] It is a schematic diagram of the spectrum of the LED device provided in Example 2 of the present invention at a color temperature of 5000K. [Figure 6-6] It is a schematic diagram comparing the spectra of the LED devices provided in Example 2 of the present invention. [Figure 6-7] It is a schematic diagram of Rf - Rg of the LED device provided in Example 2 of the present invention. [Figure 6-8] It is a schematic diagram of the Rf hue of the LED device provided in Example 2 of the present invention. [Figure 6-9] It is a schematic diagram of the spectrum of the LED device provided in Example 2 of the present invention at a color temperature of 2700K. [Figure 6-10] It is a schematic diagram of the spectrum of the LED device provided in Example 2 of the present invention at a color temperature of 3000K. [Figure 6-11] It is a schematic diagram of the spectrum of the LED device provided in Example 2 of the present invention at a color temperature of 4000K. [Figure 6-12] It is a schematic diagram of the spectrum of the LED device provided in Example 2 of the present invention at a color temperature of 5700K. [Figure 6-13] It is a schematic diagram of the spectrum of the LED device provided in Example 2 of the present invention at a color temperature of 6500K. [Figure 6-14] This is a schematic diagram of a further structure of the LED device provided in Embodiment 2 of the present invention. [Figure 7-1] This is a schematic diagram of the structure of the LED device provided in Embodiment 3 of the present invention. [Figure 7-2] This is a schematic diagram of the structure of another LED device provided in Embodiment 3 of the present invention. [Figure 8-1] This is a schematic diagram of the structure of an example of an LED device provided in Embodiment 4 of the present invention. [Figure 8-2] This is a schematic diagram of another structure of the LED device provided in Embodiment 4 of the present invention. [Figure 8-3] This is yet another schematic diagram of the LED device provided in Embodiment 4 of the present invention. [Figure 8-4] This is a schematic diagram of a further structure of the LED device provided in Embodiment 4 of the present invention. [Figure 8-5] This is a schematic diagram of a further structure of the LED device provided in Embodiment 4 of the present invention. [Figure 8-6] This is a schematic diagram of a further structure of the LED device provided in Embodiment 4 of the present invention. [Figure 8-7] This is a schematic diagram of a further structure of the LED device provided in Embodiment 4 of the present invention. [Figure 8-8] This is a schematic diagram of a further structure of the LED device provided in Embodiment 4 of the present invention. [Figure 8-9] This is a schematic diagram of the structure of the light-emitting chip provided in Embodiment 4 of the present invention. [Figure 8-10] This is a schematic diagram of light radiating from a photosensitive medium to a phototight medium, as provided in Embodiment 4 of the present invention. [Figure 8-11] This is a schematic diagram of a ray propagation simulation provided in Embodiment 4 of the present invention. [Figure 8-12] This is a schematic diagram of the simulation of the light reflection angle provided in Embodiment 4 of the present invention. [Figure 8-13a] This is a schematic diagram of a conventional LED device product with a 90° emission angle. [Figure 8-13b]This is a schematic diagram of a conventional LED device product with a 90° emission angle. [Figure 8-13c] This is a schematic diagram of a related conventional LED device product with a 90° emission angle. [Modes for carrying out the invention]

[0009] To facilitate understanding of the present invention, the present invention will be described more comprehensively below with reference to the relevant drawings. The drawings show preferred embodiments of the present invention. However, the present invention can be implemented in various forms and is not limited to the embodiments described herein. Rather, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0010] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this invention pertains. The terms used herein are for the sole purpose of describing specific embodiments and are not intended to limit the invention.

[0011] In the specification and claims of this invention, as well as in the drawings, terms such as "first," "second," etc., are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that these terms are interchangeable under appropriate circumstances to facilitate the embodiments of this invention described herein. Furthermore, terms such as "includes," "has," and their variations are intended to be non-exclusive. For example, a process, method, system, product, or apparatus comprising a series of steps or units is not necessarily limited to the steps or units explicitly described, and may include other steps or units that are not explicitly described or specific to the process, method, product, or apparatus.

[0012] In this invention, the directions or positional relationships indicated by terms such as "up," "down," "inside," "middle," "outside," "front," and "back" are based on the directions or positional relationships shown in the drawings. These terms are used primarily to better describe this invention and its embodiments, and are not intended to restrict the shown devices, elements, or components to having a particular orientation or to being constructed and operated in a particular orientation. In addition, some of the above terms are used to express meanings other than indicating a direction or positional relationship. For example, the term "up" may be used to express a particular dependency or connection relationship. A person skilled in the art will be able to understand the specific meaning of these terms in this invention depending on the specific context. Furthermore, the terms "to provide," "to connect," and "to fix" should be interpreted broadly. For example, "to connect" may be a fixed connection, a removable connection, or an integral structure, a mechanical connection or an electrical connection, a direct connection or an indirect connection via an intermediate medium, or an internal connection between two devices, elements, or components. A person skilled in the art will be able to understand the specific meaning of the above terms in this invention depending on the specific context.

[0013] Furthermore, the embodiments and features of this invention can be combined with each other without contradiction. The present invention will now be described in detail by combining embodiments with reference to the drawings.

[0014] This invention provides an LED device applicable to various lighting fields such as home lighting, office lighting, plant lighting, and medical lighting, as well as to optical signal fields such as various fields that use light as a transmission signal, and the light may be visible or invisible light. The LED device of this embodiment includes a light-emitting unit including at least one LED chip, and the LED device further includes a package layer provided on the light-emitting unit so as to cover the light-emitting unit, through which the light emitted from the light-emitting unit is transmitted and radiated, and the light-emitting unit is covered and protected by the package layer, thereby improving reliability. Here, the light-emitting chip included in the light-emitting unit of this invention includes, but is not limited to, micron-level LED chips (e.g., mini-LED chips, micro-LED chips, etc.), and may also be, for example, a micron-level flip-chip type LED chip, and of course, all or part of it can be replaced with a micron-level face-up type or vertical type LED chip. Also, in terms of size, it can be replaced with an LED chip larger than a mini-LED chip as needed. The light-emitting color of the light-emitting chip can be flexibly set according to the requirements of a specific application.

[0015] The LED device provided in this invention has been found to be more reliable and applicable to a wider range of scenarios. For ease of understanding, the present invention will be described illustratively below with reference to the following embodiments. Example 1

[0016] In related technologies, the full-spectrum concept is a field of LED lighting with a very long-term perspective. The idea is that the closer the emission spectrum is to natural light, the greater the lighting effect on human health. Currently, the emission mechanism of LED lighting products on the market is mainly based on blue light-excited fluorescent powder. General full-spectrum LEDs tend to pursue parameters such as the color rendering index Ra and R9 of the International Commission on Illumination (CIE) color evaluation system, and do not consider spectral continuity or similarity to the natural light spectrum. As a result, existing full-spectrum LED devices suffer from problems such as poor spectral continuity, a high blue light peak, and low similarity to natural light.

[0017] To facilitate understanding, the process by which the inventors discovered this problem during their research and development is illustrated below. Here, 5000K is used as a typical color temperature to explain this problem. Figure 1-1 shows the spectrum of a currently available full-spectrum LED device (hereinafter referred to as "mainstream light source"), and Figure 1-2 shows the spectrum of a typical Ra90 LED device (hereinafter referred to as "conventional Ra90"). Typical color rendering index (CRI) parameters for both are shown in Table 1 below. In Figures 1-1 and 1-2, the horizontal coordinate is wavelength, and the vertical coordinate is relative spectral intensity value. Here, relative spectral intensity refers to a schematic spectral diagram generated by normalizing the spectrum with the highest peak of spectral intensity set to 1. Figure 5-1 in this embodiment was generated using the same principle, and a detailed explanation thereafter is omitted.

[0018] [Table 1]

[0019] Referring to the Ra and R9 parameters in Table 1, it is clear that mainstream light sources currently on the market have indeed improved compared to typical Ra90 products. For ease of understanding, the evaluation system for Rf (fidelity, or color gamut value) and Rg (chrominance) according to the Illuminating Engineering Society of North America (IES) TM-30-15 standard is introduced below. Also, Figure 1-3 shows the spectral diagrams shown in Figures 1-1 and 1-2 incorporated into the same spectral power distribution (SPD) diagram for comparison and explanation. Here, the reference light source is the reference natural light. This figure is a spectral diagram of the comparison spectrum and the comparison spectrum generated by energy normalization with the energy of the comparison spectrum (i.e., the reference light source in the figure) set to 1. Figures 5-2, 5-7 to 5-14 in this embodiment are generated using the same principle, so a detailed explanation is omitted here. The hue parameters measured according to the TM-30-15 standard are shown in Table 2.

[0020] [Table 2]

[0021] In the TM-30-15 standard, Rf is used to represent the similarity of each standard color under a test light source and a reference light source. The numerical range is 0 to 100, with higher values ​​indicating higher color fidelity. When Rf is at its maximum value of 100, it indicates that there is no difference from the color under natural light and the color effect is realistic. When Rf is at its minimum value of 0, it indicates that there is the greatest difference from the color under natural light and the color effect is distorted. Rg is used to represent the characteristics of the saturation of each standard color under a test light source compared to a reference light source, with an index of 100 representing the highest saturation. When Rg is equal to 100, it indicates that the saturation of the light source is the same as that of natural light and the color saturation is moderate. When Rg is greater than 100, it indicates that the light source is supersaturated, and when Rg is less than 100, it indicates that the color saturation of the light source is insufficient.

[0022] From the spectral comparison in Figure 1-3, it was found that the mainstream light sources currently on the market have poor spectral continuity and similarity to natural light compared to the spectrum of natural light used as a background reference, and that the blue light peak is elevated.

[0023] To make the continuity problem easier to understand, we will explain the concept of Average Spectral Difference (ASD) here. ASD represents the ratio of the spectral difference area between the measured light source and the reference light source to the spectral area of ​​the reference light source. It is an index for measuring spectral continuity, and a smaller value indicates better continuity, with a minimum value of 0. The calculation of the ASD value is as follows.

number

[0024] Here, A(λ) is the target spectrum and S(λ) is the natural light spectrum. Assuming λ1 = 400 nm and λ2 = 700 nm, the ASD values ​​calculated according to equation (1) above are shown in Table 3.

[0025] [Table 3]

[0026] As can be seen from Table 3, the ASD values ​​of commercially available mainstream light sources are lower than those of typical Ra90 light sources, but there is still a significant difference when compared to natural light. In other words, the similarity (also called the degree of fit) is not yet sufficient when compared to the target spectrum of natural light.

[0027] Existing full-spectrum LED devices have been found to have poor spectral continuity, high blue light peaks, and low similarity to natural light. Based on this, this embodiment provides an LED device that can solve the above technical problems. The LED device of this embodiment is a low-blue light full-spectrum LED device.

[0028] According to the study, a comparison of the spectra in Figure 1-3 revealed that the blue light band from 400nm to 500nm showed the greatest improvement in the spectral continuity index. Therefore, in this embodiment, a new design was made for the blue light band of the LED device from 400nm to 500nm, significantly reducing the blue light peak of the LED device. This effectively solved the problem of poor continuity in the blue light portion, bringing it as close as possible to natural light. As a result, the LED device achieves better continuity, superior eye protection, and better color effects.

[0029] The low-blue-light full-spectrum LED device provided in this embodiment is shown in Figure 2, and its light-emitting unit includes a first light-emitting unit comprising at least three sets of blue-light LED chip units 1, the blue-light peak wavelengths of these at least three sets of blue-light LED chip units 1 being 415 nm to 470 nm. In this embodiment, the at least three sets of blue-light LED chip units 1 shown in Figure 2 are connected in series, but of course, these at least three sets of blue-light LED chip units 1 can also be connected in parallel, as shown in Figure 3-1, or in series and parallel, as shown in Figure 3-2. The specific electrical connection relationships can be flexibly set according to the requirements of the specific application. In this embodiment, based on the principle of balancing the blue-light energy distribution, the blue-light peak wavelengths of these at least three sets of blue-light LED chip units 1 are configured to increase sequentially within the range of 415 nm to 470 nm, thereby achieving a balanced blue-light energy distribution.

[0030] As shown in Figures 2 to 3-2, the package layer of this embodiment includes a first fluorescent colloid 22 covering at least three sets of blue light LED chip units 1, the first fluorescent colloid 22 comprising a first colloid and a first full-spectrum fluorescent powder mixed with the first colloid. The first full-spectrum fluorescent powder of this embodiment includes a first cyan powder, a first green powder, a first yellow powder, and a first red powder, resulting in fewer types of fluorescent powders required, easier manufacturing, and lower costs. Of course, it should be understood that in some application scenarios, at least one of the first cyan powder, first green powder, first yellow powder, and first red powder can be replaced with a corresponding quantum dot (QD).

[0031] In this embodiment, spectral coupling between the at least three sets of blue light LED chip units 1 and the first full-spectrum fluorescent powder of the first fluorescent colloid 22 reduces the blue light peak in the spectrum of the LED device, improves the spectral continuity of the LED device, and increases the similarity between the LED device and natural light. As a result, the LED device can more closely resemble natural light, and a better color effect can be obtained.

[0032] In this embodiment, the blue light wafers can be divided into mini-LED chips, micro-LED chips, or standard large LED chips depending on their size. Alternatively, some can be mini-LED chips, micro-LED chips, or standard large LED chips, while the remaining portion consists of at least one of the remaining two types. Depending on the electrode distribution of the blue light wafer, the blue light wafers in this embodiment can be all face-up LED chips, flip-chip LED chips, or vertical LED chips, or some can be face-up LED chips, flip-chip LED chips, or vertical LED chips, while the remaining portion consists of at least one of the remaining two types. This allows for flexible configuration according to application requirements and offers excellent versatility.

[0033] In the case of a blue light wafer, the wavelength of the blue light is directly related to the amount of In component contained in the blue light wafer. The In component can be controlled by controlling the amount of In introduced and the growth temperature during the growth of the GaN / InGaN quantum well, which is the epitaxial layer of the blue light wafer. For example, the higher the In content, the longer the wavelength of the blue light wafer; the higher the temperature, the greater the evaporation of In, the lower the In content, and the shorter the wavelength of the blue light wafer. Therefore, in this embodiment, the peak blue light wavelength of the blue light wafer can be set by controlling the In component of the blue light wafer.

[0034] The excitation efficiency of fluorescent powders on blue light wafers decreases with increasing wavelength, and different fluorescent powders have a constant excitation efficiency curve. Therefore, in this embodiment, by designing combinations of spectral energy and wavelength of the blue light wafer, a full-spectrum LED device with low blue light, spectral continuity, and high similarity to natural light is realized. To facilitate understanding, this embodiment describes several specific examples of blue light LED chip unit combinations below. Example 1:

[0035] In this example, as shown in Figure 3-3, the blue light LED chip unit of the LED device includes a first blue light LED chip unit 11, a second blue light LED chip unit 12, and a third blue light LED chip unit 13 connected in series, and a first fluorescent colloid 22 covering these three sets of blue light LED chip units (it should be understood that Figure 3-3 also allows for the use of specific electrical connection methods, such as the parallel connection shown in Figure 3-1 and the series-parallel connection shown in Figure 3-2). The blue light peak wavelengths of the first blue light LED chip unit 11, the second blue light LED chip unit 12, and the third blue light LED chip unit 13 increase sequentially within the range of 415 nm to 470 nm. According to the principle of balancing the blue light energy distribution, in this example, the blue light peak wavelengths of the first blue light LED chip unit 11, the second blue light LED chip unit 12, and the third blue light LED chip unit 13 can be specifically set to sequentially increase within the range of 430nm to 465nm. Specifically, the blue light peak wavelength of the first blue light LED chip unit 11 is set to 430nm to 440nm, the blue light peak wavelength of the second blue light LED chip unit 12 is set to 445nm to 455nm, and the blue light peak wavelength of the third blue light LED chip unit 13 is set to 455nm to 465nm.

[0036] In this example, to match the blue light distribution described above, the first full-spectrum fluorescent powder is configured to include a first cyan powder, a first green powder, a first yellow powder, and a first red powder. In some application scenarios of this example, the first full-spectrum fluorescent powder may also be configured to consist of a first cyan powder, a first green powder, a first yellow powder, and a first red powder. Specifically, the first cyan powder has an emission peak wavelength of 490 nm to 510 nm under blue light excitation, the first green powder has an emission peak wavelength of 520 nm to 540 nm under blue light excitation, the first yellow powder has an emission peak wavelength of 570 nm to 590 nm under blue light excitation, and the first red powder has an emission peak wavelength of 650 nm to 660 nm under blue light excitation.

[0037] To further improve the spectral continuity of the LED devices, the optical radiant flux in this example, also called radiant power, refers to the radiant energy passing through a certain cross-sectional area per unit time, and is the power emitted, transmitted, or received in the form of radiation, with its absolute value in units of mW. In this example, if the optical radiant flux of the second blue light LED chip unit 12 is set to 100%, the optical radiant flux of the first blue light LED chip unit 11 is 80% to 120%, and the optical radiant flux of the third blue light LED chip unit 13 is 60% to 100%. The blue light spectrum diagram obtained by combining the three is shown in Figure 5-1. In this example, the size of the blue light wafer of the third blue light LED chip unit 13 can be smaller than the size of the blue light wafers of the first blue light LED chip unit 11 and the second blue light LED chip unit 12. On the one hand, such a combination of wafer sizes is more useful for flexible wafer layout, and on the other hand, it can also reduce costs. Furthermore, the third blue light LED chip unit 13 may be positioned between the first blue light LED chip unit 11 and the second blue light LED chip unit 12, which further helps in the mixing of light from the three sets of blue light LED chip units and further improves the light emission effect.

[0038] In this example, to further improve the spectral continuity of the LED device, the half-wavelength widths of the second blue light LED chip unit 12 and the third blue light LED chip unit 13 may be set to 10 nm to 20 nm, and the half-wavelength width of the first blue light LED chip unit 11 may be set to 15 nm to 25 nm. In this example, the half-wavelength width represents the amplitude of the energy band transition during energy transition. The more transitionable energy bands there are, the larger the half-wavelength width. Correspondingly, the slower the wafer growth rate, the smaller the half-wavelength width, and the faster the wafer growth rate, the larger the half-wavelength width. Therefore, by controlling the wafer growth rate, the half-wavelength width corresponding to the blue light wafer can be flexibly set. In this example, by combining the wavelength bands and half-wavelength widths of the three sets of blue light wafers described above, an LED device can be obtained in which the blue light spectral portion is distributed according to the required radiant flux ratio.

[0039] Therefore, in this example, in order to further improve the spectral continuity of the LED device, the first cyan powder of the first full-spectrum fluorescent powder may be configured such that its half-wavelength width is 30 nm to 40 nm under blue light excitation, the first green powder has a half-wavelength width of 95 nm to 115 nm under blue light excitation, the first yellow powder has a half-wavelength width of 40 nm to 70 nm under blue light excitation, and the first red powder has a half-wavelength width of 80 nm to 100 nm under blue light excitation.

[0040] In this example, by combining the blue light chipset described above with the first fluorescent colloid, a light source with a very wide effective composite color temperature range can be obtained. To facilitate understanding, two specific application scenarios are described below as examples.

[0041] In the application scenario shown in Figure 3-5, the LED device further includes a first LED bracket 20, which includes a bowl cup 21 (also called a reflective cavity or housing cavity), and each blue light LED chip unit is housed within the bowl cup 21. As shown in Figure 3-5, in this application scenario, the first blue light LED chip unit 11, the third blue light LED chip unit 13, and the second blue light LED chip unit 12 are all housed within the bowl cup 21 and connected in series in sequence (specific electrical connection methods such as the parallel connection shown in Figure 3-1 or the series-parallel connection shown in Figure 3-2 can also be employed). The third blue light LED chip unit 13 is located between the first blue light LED chip unit 11 and the second blue light LED chip unit 12. In this application scenario, the first blue light LED chip unit 11, the third blue light LED chip unit 13, and the second blue light LED chip unit 12 may each contain only one blue light wafer. However, depending on the actual requirements, at least one of the first blue light LED chip unit 11, the third blue light LED chip unit 13, and the second blue light LED chip unit 12 may be configured to include two or more blue light wafers, and if a blue light LED chip unit includes two or more blue light wafers, the blue light wafers contained therein may be connected in series, parallel, or series-parallel. In this application scenario, there are no restrictions on the structure of the first LED bracket 20 and the specific shape and size of the bowl cup 21. The LED device obtained in this application scenario shown in Figure 3-5 is an SMD LED device.In this application scenario, when the color temperature of the LED device shown in Figure 3-5 is 1700K, 2700K, or 3000K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid of the first fluorescent colloid is 1:1 to 2:1; when the color temperature of the LED device is 4000K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:2 to 1:1; when the color temperature of the LED device is 5000K, 5700K, or 6500K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:3 to 1:1; and when the color temperature of the LED device is 13000K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:5 to 1:2 (see Table 4 below). For each of the above color temperatures, exemplary ratios of the first cyan powder, first green powder, first yellow powder, and first red powder of the first full-spectrum fluorescent powder are shown in Table 4 below, but are not limited thereto.

[0042] [Table 4]

[0043] The LED device shown in Figure 3-5 has the advantages of low blue light, high spectral continuity, and high similarity to natural light. To facilitate understanding, the optical performance at a color temperature of 5000K is explained exemplified below. Based on the TM-30-15 standard, the evaluation of the LED device in Figure 3-5 (hereinafter referred to as the "new light source") at a color temperature of 5000K is shown in Figures 5-2 to 5-7. Figure 5-2 shows the spectral power distribution diagram, and Figure 5-7 is a comparison diagram of Figure 1-3 with the spectrum of Figure 5-2 added. Here, the reference light source is reference natural light, and the hue parameters measured according to the TM-30-15 standard are shown in Table 5. Figure 5-3 shows a schematic Rf-Rg diagram, where the black dots represent the reference light source (i.e., natural light), and Figure 5-4 is the Rf hue diagram. Figure 5-4 shows that the Rf values ​​corresponding to the new light source for each standard color (indicated by the horizontal coordinates in the figure) are all significantly greater than 90 and are basically between 95 and 100. Combining this with the Rf-Rg correspondence in Figures 5-3 and 5-4, it was found that the Rg values ​​are also basically between 95 and 100. At the same time, referring to the test results in Table 5, when Rf is 97.9, the Rg value can reach 100. It is clear that the spectral continuity and similarity to natural light of the LED device in Figure 3-5 have been greatly improved, the blue light peak has been greatly reduced, and both Rf and Rg have been greatly improved.

[0044] [Table 5]

[0045] Figure 5-5 is an existing color vector diagram, where the A0 circle represents the reference light source (natural light) and consists of a classification of 16 reference light sources, and the A1 circle represents the light source under measurement. All red lines inside the A0 circle mean that the color of the light source under measurement is darker than that of the reference light source, and all lines outside the A0 circle mean that the color of all the light sources under measurement is supersaturated compared to the reference light source. When the A0 and A1 circles completely overlap, it means that the colors of the light source under measurement and the reference light source are the same, and there is no difference in color rendering between the two light sources. Figure 5-6 is a color vector diagram of the LED device in Figure 3-5. The two circles, A0 and A1, completely overlap, which means that the color rendering of the light emitted by the LED device in Figure 3-5 is basically the same as the color rendering of the reference light source (natural light). In other words, because the light emitted by the LED device can be made as close to natural light as possible, the LED device can achieve a better continuity effect, significantly improve its similarity to natural light, and also improve eye protection and color effects. Table 6 shows the ASD values ​​calculated according to formula (1) above, and this is also verified from another perspective.

[0046] [Table 6]

[0047] In another application scenario, as shown in Figure 3-4, the main difference compared to the LED device shown in Figure 3-5 is that the first LED bracket 20 shown in Figure 3-5 is replaced by the first substrate 23. In this application scenario, there are no restrictions on the structure of the first substrate 23, whether it is a flexible or rigid substrate, or its specific shape and size. The LED device obtained in this application scenario, shown in Figures 3-4, is a chip-on-board (COB) LED device. In this application scenario, when the color temperature of the LED device shown in Figure 3-4 is 1700K, 2700K, or 3000K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:2 to 1:1; when the color temperature of the LED device is 4000K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:3 to 1:1; when the color temperature of the LED device is 5000K, 5700K, or 6500K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:4 to 1:1; and when the color temperature of the LED device is 13000K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:5 to 1:2. Examples of the proportions of the first cyan powder, first green powder, first yellow powder, and first red powder of the first full-spectrum fluorescent powder at each of the above color temperatures are shown in Table 7 below, but are not limited to these.

[0048] [Table 7]

[0049] The LED device shown in Figure 3-4 also has advantages such as low blue light, high spectral continuity, and high similarity to natural light. Test results showed that the LED device shown in Figure 3-4 and the LED device shown in Figure 3-5 exhibit essentially the same optical performance at a color temperature of 5000K. Two spectral power distribution diagrams at 1700K, 2700K, 3000K, 4000K, 5700K, 6500K, and 13000K are shown in Figures 5-8 to 5-14, respectively (see the curves shown in the new scheme in the figures for details).

[0050] In other application scenarios of this example, according to the principle of balancing the blue light energy distribution, the blue light peak wavelengths of the first blue light LED chip unit 11, the second blue light LED chip unit 12, and the third blue light LED chip unit 13 in Figure 3-4 or Figure 3-5 may also be specifically set to increase sequentially within 415 nm to 470 nm.

[0051] For example, specifically, the blue light peak wavelength of the first blue light LED chip unit 11 may be set to 415nm to 430nm, the blue light peak wavelength of the second blue light LED chip unit 12 to 440nm to 450nm, and the blue light peak wavelength of the third blue light LED chip unit 13 to 450nm to 465nm. The half-wavelength range of each set of blue light LED chip units may be adjusted as appropriate or remain unchanged. The first full-spectrum fluorescent powder may also remain unchanged or be adjusted as appropriate. Alternatively, more specifically, the blue light peak wavelength of the first blue light LED chip unit 11 is set to 420nm~435nm, the blue light peak wavelength of the second blue light LED chip unit 12 is set to 436nm~450nm, and the blue light peak wavelength of the third blue light LED chip unit 13 is set to 455nm~460nm. The half-wavelength range of each set of blue light LED chip units is adjusted as appropriate or remains constant, and the first full-spectrum fluorescent powder is either constant or adjusted as appropriate. Alternatively, specifically, the blue light peak wavelength of the first blue light LED chip unit 11 may be set to 400nm~435nm, the blue light peak wavelength of the second blue light LED chip unit 12 to 440nm~450nm, and the blue light peak wavelength of the third blue light LED chip unit 13 to 450nm~460nm. The half-wavelength range of each set of blue light LED chip units may be adjusted as appropriate or remain unchanged. The first full-spectrum fluorescent powder may also remain unchanged or be adjusted as appropriate. Test results showed that the light emission effect of the LED device obtained with the above adjustments was similar to that of the LED device shown in Figure 3-5. In other words, both devices improved spectral continuity and similarity to natural light, and reduced the blue light peak. Example 2:

[0052] In this example, as shown in Figure 4-1, the blue light LED chip unit of the LED device includes electrically connected fourth blue light LED chip unit 14, fifth blue light LED chip unit 15, sixth blue light LED chip unit 16, and seventh blue light LED chip unit 17. The specific connection method of these four sets of blue light LED chip units may be in series, parallel, or series-parallel, and the blue light peak wavelengths of these four sets of blue light wafers increase sequentially in the range of 415 nm to 470 nm. For example, according to the principle of balancing the blue light energy distribution, the blue light peak wavelength of the fourth blue light LED chip unit 14 may be 415 nm to 425 nm, the blue light peak wavelength of the fifth blue light LED chip unit 15 may be 430 nm to 440 nm, the blue light peak wavelength of the sixth blue light LED chip unit 16 may be 445 nm to 455 nm, and the blue light peak wavelength of the seventh blue light LED chip unit 17 may be 460 nm to 470 nm.

[0053] In this example, to match the blue light distribution described above, the first full-spectrum fluorescent powder is configured to include a first cyan powder, a first green powder, a first yellow powder, and a first red powder. In some application scenarios of this example, the first full-spectrum fluorescent powder may also be configured to consist of a first cyan powder, a first green powder, a first yellow powder, and a first red powder. Specifically, the first cyan powder is configured to have an emission peak wavelength of 490 nm to 510 nm under blue light excitation, the first green powder is configured to have an emission peak wavelength of 520 nm to 540 nm under blue light excitation, the first yellow powder is configured to have an emission peak wavelength of 570 nm to 590 nm under blue light excitation, and the first red powder is configured to have an emission peak wavelength of 650 nm to 660 nm under blue light excitation.

[0054] To further improve the spectral continuity of the LED device in this example, in some application scenarios of this example, the optical radiant flux of the fourth blue light LED chip unit 14 and the sixth blue light LED chip unit 16 may be configured to be 80% to 120% of the optical radiant flux of the fifth blue light LED chip unit 15, and the optical radiant flux of the seventh blue light LED chip unit 17 may be configured to be 60% to 100% of the optical radiant flux of the fifth blue light LED chip unit 15. In other words, in this example, if the optical radiant flux of the fifth blue light LED chip unit 15 is 100%, then the optical radiant flux of the fourth blue light LED chip unit 14 and the sixth blue light LED chip unit 16 is 80% to 120%, and the optical radiant flux of the seventh blue light LED chip unit 17 is 60% to 100%. The blue light spectral diagram obtained by combining these four will be similar to that shown in Figure 5-1. Therefore, in this example, the size of the blue light wafer of the seventh blue light LED chip unit 17 may be smaller than the size of the blue light wafers of the fourth blue light LED chip unit 14, the fifth blue light LED chip unit 15, and the sixth blue light LED chip unit 16. Furthermore, in this example, the seventh blue light LED chip unit 17 can be placed between the fourth blue light LED chip unit 14 and the fifth blue light LED chip unit 15 to facilitate the mixing of light from each pair of blue light LED chip units and ensure the light emission effect.

[0055] In this example, in order to further improve the spectral continuity of the LED device, the half-wavelength widths of the fifth blue light LED chip unit 15, the sixth blue light LED chip unit 16, and the seventh blue light LED chip unit 17 may be set to 10 nm to 20 nm, and the half-wavelength width of the fourth blue light LED chip unit 14 may be set to 15 nm to 25 nm. In this example, by combining the wavelength bands and half-wavelength widths of the four sets of blue light wafers, an LED device can be obtained in which the blue light spectral portion is distributed according to the required radiant flux ratio.

[0056] Therefore, in this example, in order to further improve the spectral continuity of the LED device, the first cyan powder of the first full-spectrum fluorescent powder may be configured such that its half-wavelength width is 30 nm to 40 nm under blue light excitation, the first green powder has a half-wavelength width of 95 nm to 115 nm under blue light excitation, the first yellow powder has a half-wavelength width of 40 nm to 70 nm under blue light excitation, and the first red powder has a half-wavelength width of 80 nm to 100 nm under blue light excitation.

[0057] In this example, by combining the blue light chipset described above with the first fluorescent colloid, a light source with a very wide effective composite color temperature range can be obtained. To facilitate understanding, two specific application scenarios will be explained below as examples.

[0058] In the application scenario, as shown in Figure 4-2, the LED device in this application scenario includes a first substrate 23, each blue light LED chip unit is provided on the same side of the first substrate 23 (e.g., the front or back of the first substrate 23), and the first fluorescent colloid 22 is provided on the first substrate 23 so as to cover each blue light LED chip unit. As shown in Figure 4-2, in this application scenario, the fourth blue light LED chip unit 14, the fifth blue light LED chip unit 15, the sixth blue light LED chip unit 16, and the seventh blue light LED chip unit 17 are connected in series (which can be replaced with parallel or series-parallel) and are all provided on the first substrate 23. In this application scenario, the fourth blue light LED chip unit 14, the fifth blue light LED chip unit 15, the sixth blue light LED chip unit 16, and the seventh blue light LED chip unit 17 may each include only one blue light wafer. However, depending on the actual requirements, at least one of the fourth blue light LED chip unit 14, the fifth blue light LED chip unit 15, the sixth blue light LED chip unit 16, and the seventh blue light LED chip unit 17 may be configured to include two or more blue light wafers, and if a blue light LED chip unit includes two or more blue light wafers, the blue light chips contained therein may be connected in series, parallel, or series-parallel. In this application scenario, there are no restrictions on the structure of the first substrate 23, whether it is a flexible or rigid substrate, or its specific shape or size. The LED device obtained in this application scenario shown in Figure 4-2 is a COB LED device, and the color temperature of the LED device can cover a range of 1700K to 13000K. The composition of the first full-spectrum fluorescent powder is the same as the first full-spectrum fluorescent powder in each of the above examples, or can be slightly adjusted as needed. Its optical performance is basically the same as the LED devices in each of the above examples, and therefore will not be described again here.

[0059] In another application scenario, as shown in Figure 4-3, the main difference compared to the LED device shown in Figure 4-2 is that the first substrate 23 in Figure 4-2 is replaced by a first LED bracket 20, and after the replacement, each blue light LED chip unit is housed in the bowl cup 21 of the first LED bracket 20. In this application scenario, there are no restrictions on the structure of the first LED bracket 20, nor on the specific shape or size of the bowl cup 21. The LED device obtained in this application scenario shown in Figure 4-3 is an SMD LED device. In this application scenario, the color temperature of the LED device can cover 1700K to 13000K, the composition of the first full-spectrum fluorescent powder is the same as the first full-spectrum fluorescent powder in each of the above examples, or can be slightly adjusted as needed, and its optical performance is basically the same as the LED devices in each of the above examples, so it will not be described again here.

[0060] In other application scenarios of this example, according to the principle of balancing the blue light energy distribution, the combination of blue light peak wavelengths of the four sets of blue light LED chip units in Figure 4-2 or Figure 4-3 can also be appropriately adjusted within the range of 415 nm to 470 nm. For example, the blue light peak wavelength of the fourth blue light LED chip unit 14 may be set to 416 nm to 426 nm, the blue light peak wavelength of the fifth blue light LED chip unit 15 to 431 nm to 441 nm, the blue light peak wavelength of the sixth blue light LED chip unit 16 to 446 nm to 456 nm, and the blue light peak wavelength of the seventh blue light LED chip unit 17 to 461 nm to 470 nm. The half-wavelength range of each set of blue light LED chip units may be adjusted as appropriate or remain unchanged, and the first full-spectrum fluorescent powder may remain unchanged or be adjusted as appropriate. Alternatively, more specifically, the blue light peak wavelength of the fourth blue light LED chip unit 14 is set to 415nm~430nm, the blue light peak wavelength of the fifth blue light LED chip unit 15 is set to 431nm~445nm, the blue light peak wavelength of the sixth blue light LED chip unit 16 is set to 446nm~460nm, and the blue light peak wavelength of the seventh blue light LED chip unit 17 is set to 461nm~470nm. The half-wavelength range of each set of blue light LED chip units may be adjusted as appropriate or remain unchanged, and the first full-spectrum fluorescent powder may remain unchanged or be adjusted as appropriate. Alternatively, more specifically, the blue light peak wavelength of the fourth blue light LED chip unit 14 is set to 415nm~429nm, the blue light peak wavelength of the fifth blue light LED chip unit 15 is set to 430nm~444nm, the blue light peak wavelength of the sixth blue light LED chip unit 16 is set to 445nm~459nm, and the blue light peak wavelength of the seventh blue light LED chip unit 17 is set to 460nm~468nm. The half-wavelength range of each set of blue light LED chip units may be adjusted as appropriate or remain unchanged, and the first full-spectrum fluorescent powder may remain unchanged or be adjusted as appropriate. Test results showed that the light emission effect of the LED device obtained with the above adjustments was similar to that of the LED device shown in Figure 3-5, meaning that both improved spectral continuity and similarity to natural light, and reduced the blue light peak.

[0061] The above examples show combinations of three sets of blue light LED chip units and four sets of blue light LED chip units, respectively. However, in this embodiment, five or more sets of blue light wafers can be combined as needed, and one set of blue light LED chip units may contain only one blue light wafer corresponding to the range of blue light peak wavelength and half-wavelength width, or multiple blue light wafers may be installed as needed. This explanation will not be repeated here. In this embodiment, the ranges of blue light peak wavelengths of each set of blue light LED chip units may be set so as not to overlap, thereby ensuring the light emission effect. Of course, in some other examples, the ranges of blue light peak wavelengths of at least some of the blue light LED chip units may overlap, as long as the above technical problems that this embodiment aims to solve are basically solved. Also, in this embodiment, the number of wafers included in each set of blue light LED chip units may be the same, and the number of wafers in at least one set of blue light LED chip units may differ from the number of wafers in the other sets of blue light LED chip units.

[0062] In this embodiment, the first cyanide powder in the above example may be the nitrogen oxide BaSi2O2N2:Eu2+, but is not limited thereto. The first green powder may be the aluminate Lu3Al5O12:Ce3+, but is not limited thereto. The first yellow powder may be the silicate Ba2SiO4:Eu2+ or SiAlON:Eu2+, but is not limited thereto. The first red powder may be the nitride Sr,CaAlSiN3:Eu2+, but is not limited thereto. This embodiment does not particularly limit the materials of the first cyanide powder, the first green powder, the first yellow powder, and the first red powder.

[0063] To facilitate understanding, this embodiment will illustrate the manufacturing process of LED devices as follows. Examples of manufacturing processes include, but are not limited to, the following.

[0064] S101: Combine with a blue light chipset.

[0065] We will design a new wafer set configuration using a combination of three blue light LED chip units and a color temperature of 5000K as an example. Specifically, three sets of blue light wafers with different peak wavelengths are designed so that the peak blue light wavelength is in the range of 415nm to 470nm. Here, the peak blue light wavelengths of the first blue light LED chip unit 11, the second blue light LED chip unit 12, and the third blue light LED chip unit 13 are configured to increase sequentially within the range of 430nm to 465nm. Specifically, the peak blue light wavelength of the first blue light LED chip unit 11 is 430nm to 440nm, the peak blue light wavelength of the second blue light LED chip unit 12 is 445nm to 455nm, and the peak blue light wavelength of the third blue light LED chip unit 13 is 455nm to 465nm. If the light radiant flux of the second blue light LED chip unit 12 is 100%, the light radiant flux of the first blue light LED chip unit 11 is 80% to 120%, and the light radiant flux of the third blue light LED chip unit 13 is 60% to 100%. Furthermore, the half-wavelength widths of the second blue light LED chip unit 12 and the third blue light LED chip unit 13 are configured to be 10nm to 20nm, and the half-wavelength width of the first blue light LED chip unit 11 is configured to be 15nm to 25nm.

[0066] Using a combination of four blue light LED chip units and a color temperature of 5000K as an example, we design a new wafer combination configuration. Specifically, three sets of blue light chips with different peak wavelengths are designed within the range of 415nm to 470nm. Here, the blue light peak wavelength of the fourth blue light LED chip unit 14 is 415nm to 425nm, the blue light peak wavelength of the fifth blue light LED chip unit 15 is 430nm to 440nm, the blue light peak wavelength of the sixth blue light LED chip unit 16 is 445nm to 455nm, and the blue light peak wavelength of the seventh blue light LED chip unit 17 is 460nm to 470nm. Furthermore, if the light radiant flux of the fifth blue light LED chip unit 15 is set to 100%, the light radiant flux of the fourth blue light LED chip unit 14 and the sixth blue light LED chip unit 16 is set to 80% to 120%, the light radiant flux of the seventh blue light LED chip unit 17 is set to 60% to 100%, the half-wavelength width of the fifth blue light LED chip unit 15, the sixth blue light LED chip unit 16, and the seventh blue light LED chip unit 17 is set to 10 nm to 20 nm, and the half-wavelength width of the fourth blue light LED chip unit 14 is set to 15 nm to 25 nm.

[0067] In this example, by combining the wavelength bands and half-wavelength widths of the four sets of blue light wafers described above, a blue light LED chip unit can be obtained in which the blue light spectral portion is distributed according to the required radiant flux ratio.

[0068] S102: Contains the first full-spectrum fluorescent powder.

[0069] In this example, in order to match the blue light distribution described above, it is preferable that the first full-spectrum fluorescent powder includes a first cyan powder, a first green powder, a first yellow powder, and a first red powder to synthesize a new spectral effect. Here, the first cyan powder in the first full-spectrum fluorescent powder has a peak wavelength range of 490 nm to 510 nm and a half-wavelength range of 30 nm to 40 nm, and its system may be, but is not limited to, nitrogen oxides BaSi2O2N2:Eu2+. The first green powder has a peak wavelength range of 520 nm to 540 nm and a half-wavelength range of 95 nm to 115 nm, and its system may be, but is not limited to, aluminate Lu3Al5O12:Ce3+. The first yellow powder has a peak wavelength range of 570 nm to 590 nm and a half-wavelength range of 40 nm to 70 nm. Its system may be, but is not limited to, silicates such as Ba2SiO4:Eu2+ or SiAlON:Eu2+. The first red powder has a peak wavelength range of 650 nm to 660 nm and a half-wavelength range of 80 nm to 100 nm. Its system may be, but is not limited to, nitrides such as Sr,CaAlSiN3:Eu2+.

[0070] S103: Prepare the semi-finished product package carrier and perform die bonding.

[0071] For example, if the LED device to be manufactured is an SMD LED lamp bead, a corresponding first LED bracket can be prepared accordingly, and three or four sets of blue light wafers prepared in S101 can be electrically connected and placed in the bowl cup of the first LED bracket.

[0072] If the manufactured LED device is a COB light source, a first substrate can be prepared accordingly, and the three or four sets of blue light wafers prepared in S101 can be electrically connected and placed on the first substrate.

[0073] In this example, the blue light wafer can be fixed to the first LED bracket or first substrate by die bonding adhesive (but not limited to it), and the die bonding adhesive can be fully cured by baking at 150°C (but not limited to it) for 1-2 hours. The blue light wafers can also be connected to each other, and to the bracket or first substrate, with welding wire as needed. The welding wire is generally 0.9 mil 80% Au, using M-arc or S-arc technology. The method of connecting the welding wire depends on the design of the bracket structure and the blue light wafer structure, and it is sufficient that circuit conductivity can be achieved.

[0074] S104: Manufacture the first fluorescent colloid.

[0075] Taking the manufacturing scheme for the LED device at a 5000K color temperature shown in Figure 3-5 as an example, the mass ratio of the first full-spectrum fluorescent powder to the first colloid used is 1:3 to 1:1, and the proportions of the fluorescent powder combinations are as follows: First cyan powder:First green powder:First yellow powder:First red powder is 5% to 10%:75% to 85%:0% to 5%:5% to 15%. Taking the manufacturing scheme for the LED device at a 5000K color temperature shown in Figure 3-4 as an example, the mass ratio of the first full-spectrum fluorescent powder to the first colloid used is 1:4 to 1:1, and the proportions of the fluorescent powder combinations are as follows: First cyan powder:First green powder:First yellow powder:First red powder is 5% to 15%:75% to 85%:0% to 5%:5% to 15%. Subsequently, the mixture is vibrated in a mixer to ensure uniform mixing, typically for 200 to 400 seconds at a speed of 1000 to 2000 revolutions per minute. By adjusting the concentration ratio of the fluorescent powder combination to the first colloid (e.g., silica gel can be used, but is not limited to this), and the proportions of the powders in the fluorescent powder combination, advantageous spectral schemes for different color temperature ranges can be obtained. It should be understood that there is no strict order to the four steps S101 to S104 described above; they can be performed sequentially, or at least some steps can be performed in parallel, but this is not limited to this.

[0076] S105: Perform packaging.

[0077] The manufactured first fluorescent colloid is potted in the bowl cup of the first LED bracket or onto the first substrate to cover each blue light wafer, and the first fluorescent colloid is cured by baking. The baking conditions are, for example, 3 to 4 hours at 150°C, but are not limited to this. This allows for the manufacture of the LED device of this embodiment.

[0078] LED devices manufactured based on this embodiment achieve a low-blue light full-spectrum effect that closely matches the spectral curve of natural light, significantly improving light quality and playing a crucial role in accelerating the development of future lighting and displays.

[0079] This embodiment also provides an LED assembly including the low-blue-light full-spectrum LED device described above. In some examples of this embodiment, the LED assembly may be a lighting assembly for illumination, and can be used, for example, in household lighting, medical lighting, educational lighting, plant lighting, decorative lighting, traffic lighting, etc. It may also include at least one of the COB LED device and SMD LED device described above. In some other examples of this embodiment, the LED assembly may be a display device for a display, and when used for a display, it may be applied to a backlight display screen as a backlight source, or directly applied to a display screen as a direct display source. Of course, the LED assembly can also be used as a key backlight or illumination source for mobile phones, calculators, keyboards, and other keyed devices, or as a flashlight or auxiliary light for cameras. The above applications are only a small part of the examples shown in this embodiment. The applications of the LED assembly of this embodiment are not limited to the areas shown in the above examples and will not be repeated here. Example 2

[0080] The existing full-spectrum LED device described in Example 1 above suffers from problems such as poor spectral continuity, a high blue light peak, and low similarity to natural light. This embodiment provides a different, new design for the 400nm-500nm blue light band of the LED device, significantly reducing the blue light peak of the LED device, thereby effectively solving the problem of poor continuity in the blue light portion and bringing it as close as possible to natural light, enabling the LED device to achieve better continuity, better eye protection, and better color effects. The LED device in this embodiment is a full-spectrum LED device. It should also be understood that the LED device in this embodiment can be implemented independently of other embodiments. For ease of understanding, the following embodiments will describe the full-spectrum LED device illustratively.

[0081] The full-spectrum LED device provided in this embodiment, as shown in Figure 6-1, exhibits good spectral continuity, a low blue light peak, high similarity to natural light, a simple structure, and low cost. Its light-emitting unit includes a second light-emitting unit, which includes a blue light LED chip unit, the peak wavelength range of which is 432 nm to 463 nm. The blue light LED chip unit of this embodiment consists of an eighth blue light LED chip unit 31 and a ninth blue light LED chip unit 32 as shown in Figure 6-1. According to the principle of balancing the blue light energy distribution, the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32 are electrically connected (the electrical connection shown in Figure 6-1 is in series, but the electrical connection in this embodiment may be in parallel). The peak wavelength of the eighth blue light LED chip unit 31 is smaller than the peak wavelength of the ninth blue light LED chip unit 32, and the light radiant flux of the ninth blue light LED chip unit is configured to be 60% to 100% of the light radiant flux of the eighth blue light LED chip unit. This design requires fewer types and numbers of blue light LED chips, has a simple structure, low cost, and is easy to manufacture. As shown in Figure 6-1, the package layer of the full-spectrum LED device includes a second fluorescent colloid 40 that packages the blue light LED chip unit internally. The second fluorescent colloid 40 includes a second colloid and a second full-spectrum fluorescent powder mixed with the second colloid. Spectral coupling between these two sets of blue light LED chip units and the second full-spectrum fluorescent powder in the second fluorescent colloid balances the distribution of blue light energy, reduces the blue light peak in the LED device's spectrum, improves the spectral continuity of the LED device, and increases the similarity between the LED device and natural light. As a result, the LED device can more closely resemble natural light, achieve better color effects, and better protect the user's eyes.

[0082] In some examples of this embodiment, the second full-spectrum fluorescent powder includes a second cyan powder, a second green powder, a second yellow powder, and a second red powder. In this embodiment, spectral coupling between the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32 and the second full-spectrum fluorescent powder in the second fluorescent colloid 40 reduces the blue light peak in the spectrum of the LED device, improves the spectral continuity of the LED device, and further enhances the similarity between the LED device and natural light, thereby allowing the LED device to more closely resemble natural light and achieve a better color effect.

[0083] In the case of a blue light LED chip, the wavelength of the blue light is directly related to the In component content of the blue light LED chip. Therefore, in this embodiment, the peak wavelength of the blue light LED chip can be set by controlling the In component of the blue light LED chip. The size and type of the blue light LED chip in this embodiment can be set by referring to Embodiment 1 above, but are not limited thereto and will not be described again here.

[0084] To further improve the spectral continuity of the LED device in this example, the second full-spectrum fluorescent powder in this embodiment is configured to include a second cyan powder, a second green powder, a second yellow powder, and a second red powder. In some application scenarios of this example, the second full-spectrum fluorescent powder may be configured to consist of a second cyan powder, a second green powder, a second yellow powder, and a second red powder. The required second full-spectrum fluorescent powder is few in number, low in cost, and has a simple mixing ratio. For example, in some examples, to match the blue light distribution described above, the selected second cyan powder may be configured to have an emission peak wavelength range of 490 nm to 510 nm under blue light excitation, the second green powder to have an emission peak wavelength range of 520 nm to 540 nm under blue light excitation, the second yellow powder to have an emission peak wavelength range of 570 nm to 590 nm under blue light excitation, and the second red powder to have an emission peak wavelength range of 650 nm to 660 nm under blue light excitation. Of course, it should be understood that in some applications, at least one of the secondary cyanide powder, secondary green powder, secondary yellow powder, and secondary red powder may be equivalently replaced by the corresponding QD.

[0085] To further improve the spectral continuity of the LED devices in this example, in some application scenarios of this example, the peak wavelength range of the 8th blue light LED chip unit 31 may be 432 nm to 442 nm, the peak wavelength range of the 9th blue light LED chip unit 32 may be 453 nm to 463 nm, and the optical radiant flux of the 9th blue light LED chip unit 32 may be 60% to 100% of the optical radiant flux of the 8th blue light LED chip unit 31. For the definition of optical radiant flux in this example, refer to Example 1 described above. That is, in this example, if the optical radiant flux of the 8th blue light LED chip unit 31 is 100%, then the optical radiant flux of the 9th blue light LED chip unit 32 is 60% to 100%, and refer to Figure 6-4 for the blue light spectrum diagram obtained by combining the two. Therefore, in this example, the size of the blue light LED chip in the 9th blue light LED chip unit 32 can be smaller than the size of the blue light LED chip in the 8th blue light LED chip unit 31. This combination of large and small wafers allows for more flexible wafer layout, while also potentially reducing costs.

[0086] In this example, in order to further improve the spectral continuity of the LED device, the half-wavelength range of the eighth blue light LED chip unit 31 may be configured to be 15 nm to 25 nm, and the half-wavelength range of the ninth blue light LED chip unit 32 may be configured to be 10 nm to 20 nm. Since the definition of the half-wavelength range in this example refers to the above-described example 1, the half-wavelength range corresponding to the blue light LED chip can be flexibly set by controlling the growth rate of the blue light LED chip. In this example, by combining the wavelength bands and half-wavelengths of the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32 described above, an LED device can be obtained in which the blue light spectral portion is distributed according to the required radiant flux ratio.

[0087] Therefore, in this example, in order to further improve the spectral continuity of the LED device, the second full-spectrum fluorescent powder may be configured such that the second cyan powder has a half-wavelength width of 30 nm to 40 nm under blue light excitation, the second green powder has a half-wavelength width of 95 nm to 115 nm under blue light excitation, the second yellow powder has a half-wavelength width of 40 nm to 70 nm under blue light excitation, and the second red powder has a half-wavelength width of 80 nm to 100 nm under blue light excitation.

[0088] In this embodiment, a light source with a very wide color temperature range can be obtained by combining the above-described blue light LED chip unit with a second fluorescent colloid. The excitation efficiency of the blue light LED chip for the second full-spectrum fluorescent powder decreases with increasing wavelength, and different second full-spectrum fluorescent powders have a fixed excitation efficiency curve. Therefore, in this embodiment, the spectral energy and wavelength of the blue light LED chip are combined to realize a full-spectrum LED device with low blue light, high spectral continuity, and high similarity to natural light. For ease of understanding, several combinations of blue light LED chips are described below as examples in this embodiment. Example 1:

[0089] In this example, the peak wavelength range of the eighth blue light LED chip unit 31 of the full-spectrum LED device is 432nm to 442nm, the peak wavelength range of the ninth blue light LED chip unit 32 is 453nm to 463nm, the half-wavelength range of the eighth blue light LED chip unit 31 is 15nm to 25nm, the half-wavelength range of the ninth blue light LED chip unit 32 is 10nm to 20nm, and the optical radiant flux of the ninth blue light LED chip unit 32 is 60% to 100% of the optical radiant flux of the eighth blue light LED chip unit 31. The second full-spectrum fluorescent powders selected for full-spectrum LED devices are as follows: the second cyan powder has a peak emission wavelength range of 490nm to 510nm and a half-wavelength width of 30nm to 40nm under blue light excitation; the second green powder has a peak emission wavelength range of 520nm to 540nm and a half-wavelength width of 95nm to 115nm under blue light excitation; the second yellow powder has a peak emission wavelength range of 570nm to 590nm and a half-wavelength width of 40nm to 70nm under blue light excitation; and the second red powder has a peak emission wavelength range of 650nm to 660nm and a half-wavelength width of 80nm to 100nm under blue light excitation. The full-spectrum LED device obtained by combining the above-mentioned blue light LED chip unit with the second fluorescent colloid was tested and confirmed to have significantly improved spectral continuity and similarity to natural light within the effective composite color temperature range of 2700K to 6500K, a significant reduction in the blue light peak, and a substantial improvement in both Rf and Rg.

[0090] For example, one application scenario refers to the full-spectrum LED device shown in Figure 6-2, which further includes a second LED bracket 41, the second LED bracket 41 including a second bowl cup 42 (also called a reflective cavity or housing cavity), and both an eighth blue light LED chip unit 31 and a ninth blue light LED chip unit 32 are housed within the second bowl cup 42 and connected in series, with at least a portion of the second fluorescent colloid housed within the second bowl cup 42 so as to cover each blue light chip unit. In this application scenario, the peak wavelength range of the eighth blue light LED chip unit 31 is 432nm to 437nm, the peak wavelength range of the ninth blue light LED chip unit 32 is 458nm to 463nm, the half-wavelength range of the eighth blue light LED chip unit 31 is 15nm to 25nm, and the half-wavelength range of the ninth blue light LED chip unit 32 is 10nm to 25nm. The radiant flux of the 8th blue light LED chip unit 31 is 100%, and the radiant flux of the 9th blue light LED chip unit 32 is 60% to 90% or 60% to 100%. The 2nd full-spectrum fluorescent powder has the following characteristics: the 2nd cyan powder has a peak emission wavelength range of 490 nm to 510 nm and a half-wavelength width of 30 nm to 40 nm under blue light excitation; the 2nd green powder has a peak emission wavelength range of 520 nm to 540 nm and a half-wavelength width of 95 nm to 115 nm under blue light excitation; the 2nd yellow powder has a peak emission wavelength range of 570 nm to 590 nm and a half-wavelength width of 40 nm to 70 nm under blue light excitation; and the 2nd red powder has a peak emission wavelength range of 650 nm to 660 nm and a half-wavelength width of 80 nm to 100 nm under blue light excitation. In this example, the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32 may each contain only one blue light LED chip. In this case, only two blue chips are needed, which significantly simplifies the structure of the full-spectrum LED device and minimizes chip costs.However, depending on the actual requirements, at least one of the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32 may be configured to include two or more blue light LED chips, and if a blue light LED chip unit includes two or more blue light LED chips, it should be understood that the blue light LED chips contained therein may be connected in series, parallel, or in series. In this application scenario, there are no restrictions on the structure of the second LED bracket 41 and the specific shape and size of the second bowl cup 42. The full-spectrum LED device shown in Figure 6-2 obtained in this application scenario is an SMD LED device. In this application scenario, when the color temperature of the full-spectrum LED device shown in Figure 6-2 is 2700K or 3000K, the mass ratio of the second full-spectrum fluorescent powder to the second colloid is 1:1 to 2:1; when the color temperature of the full-spectrum LED device is 4000K, the mass ratio of the second full-spectrum fluorescent powder to the second colloid is 1:2 to 1:1; and when the color temperature of the full-spectrum LED device is 5000K, 5700K, or 6500K, the mass ratio of the second full-spectrum fluorescent powder to the second colloid is 1:3 to 1:1. Referring to Table 8 below, the proportions of the second cyan powder, second green powder, second yellow powder, and second red powder of the second full-spectrum fluorescent powder for each of the above color temperatures are shown in Table 8 below.

[0091] [Table 8]

[0092] The full-spectrum LED device shown in Figure 6-2 has advantages such as low blue light, high spectral continuity, and high similarity to natural light. For ease of understanding, the optical performance at a color temperature of 5000K is described below as an example. The TM-30-15 standard shows the evaluation of the full-spectrum LED device shown in Figure 6-2 (hereinafter referred to as the "new light source") at a color temperature of 5000K in Figures 6-5 to 6-6. Figure 6-5 shows the spectral power distribution diagram of the full-spectrum LED device, and Figure 6-6 is a spectral comparison diagram in which Figure 6-5 is added to Figure 1-3 shown in the above example. The hue parameters measured according to the TM-30-15 standard are shown in Table 9. Figure 6-7 shows a schematic diagram of Rf-Rg, where the black dots represent the reference light source (i.e., natural light), and Figure 6-8 is the Rf hue diagram. From Figure 6-8, it was found that the Rf values ​​corresponding to the new light source for each standard color (shown in the horizontal coordinates of Figure 6-8) were all much greater than 90 and basically between 95 and 100. Combining Figures 6-7 and 6-8, it was found that the Rg values ​​were also basically between 95 and 100. At the same time, referring to the test results in Table 9, when Rf is 98, the Rg value can reach 100.

[0093] From the figures above, it is clear that the spectral continuity and similarity to natural light of the full-spectrum LED device in Figure 6-2 have been significantly improved, the blue light peak has been significantly reduced, and both Rf and Rg have been significantly improved.

[0094] [Table 9]

[0095] The color vector diagram of the full-spectrum LED device shown in Figure 6-2 of this embodiment refers to Figure 5-6 of Embodiment 1 above, where the two circles A0 and A1 completely overlap. This means that the color rendering of the light emitted by the full-spectrum LED device in Figure 6-2 is essentially the same as that of the reference light source (natural light). In other words, because the light emitted by the full-spectrum LED device in Figure 6-2 can be made as close as possible to natural light, the LED device can achieve a better continuity effect, significantly improving its similarity to natural light, and also improving eye protection and color effects. The ASD value of the full-spectrum LED device in Figure 6-2, calculated according to the above formula (1), is shown in Table 10, verifying this from another perspective.

[0096] [Table 10]

[0097] In another application scenario, as shown in Figure 6-3, the full-spectrum LED device in this application scenario includes a second substrate 43, where the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32 are mounted on the same side of the second substrate 43 (e.g., the front or back of the second substrate 43) and connected in series, and the second fluorescent colloid 40 is mounted on the second substrate 43 so as to cover the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32. As shown in Figure 6-3, in this application scenario, the peak wavelength range of the 8th blue light LED chip unit 31 is 432nm to 437nm, the peak wavelength range of the 9th blue light LED chip unit 32 is 458nm to 463nm, the half-wavelength range of the 8th blue light LED chip unit 31 is 15nm to 25nm, the half-wavelength range of the 9th blue light LED chip unit 32 is 10nm to 25nm, the light radiant flux of the 8th blue light LED chip unit 31 is 100%, and the light radiant flux of the 9th blue light LED chip unit 32 is 60% to 80% or 60% to 100%. The second cyan powder of the second full-spectrum fluorescent powder has an emission peak wavelength range of 490 nm to 510 nm and a half-wavelength width of 30 nm to 40 nm under blue light excitation; the second green powder has an emission peak wavelength range of 520 nm to 540 nm and a half-wavelength width of 95 nm to 115 nm under blue light excitation; the second yellow powder has an emission peak wavelength range of 570 nm to 590 nm and a half-wavelength width of 40 nm to 70 nm under blue light excitation; and the second red powder has an emission peak wavelength range of 650 nm to 660 nm and a half-wavelength width of 80 nm to 100 nm under blue light excitation. In this example, the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32 may each contain only one blue light LED chip, in which case only two blue chips are needed, greatly simplifying the structure of the full-spectrum LED device and minimizing chip costs. However, it should be understood that, depending on actual needs, at least one of the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32 may be configured to include two or more blue light LED chips.In this application scenario, there are no restrictions on the structure of the second substrate 43, whether it is a flexible or rigid substrate, or its specific shape and size. The full-spectrum LED device obtained in this application scenario, shown in Figure 6-3, is a chip-on-board (COB) LED device. In this application scenario, when the color temperature of the full-spectrum LED device shown in Figure 6-3 is 2700K or 3000K, the mass ratio of the second full-spectrum fluorescent powder to the second colloid is 1:2 to 1:1; when the color temperature of the full-spectrum LED device is 4000K, the mass ratio of the second full-spectrum fluorescent powder to the second colloid is 1:3 to 1:1; and when the color temperature of the full-spectrum LED device is 5000K, 5700K, or 6500K, the mass ratio of the second full-spectrum fluorescent powder to the second colloid is 1:4 to 1:1. For each of the above color temperatures, the proportions of the second cyan powder, second green powder, second yellow powder, and second red powder of the second full-spectrum fluorescent powder are shown in Table 11 below.

[0098] [Table 11]

[0099] The full-spectrum LED device shown in Figure 6-3 also has advantages such as low blue light, high spectral continuity, and high similarity to natural light. Test results showed that the full-spectrum LED device shown in Figure 6-3 and the full-spectrum LED device shown in Figure 6-2 exhibit essentially the same optical performance at a color temperature of 5000K. Two spectral power distribution diagrams at 2700K, 3000K, 4000K, 5700K, and 6500K are shown in Figures 6-9 to 6-13, respectively (see the curves shown in the new method in the figures for details). Example 2:

[0100] In this example, the peak wavelength range of the eighth blue light LED chip unit 31 of the full-spectrum LED device is 432nm to 445nm, the peak wavelength range of the ninth blue light LED chip unit 32 is 446nm to 463nm, the half-wavelength range of the eighth blue light LED chip unit 31 is 15nm to 25nm, the half-wavelength range of the ninth blue light LED chip unit 32 is 10nm to 20nm, the light radiant flux of the eighth blue light LED chip unit 31 is 100%, and the light radiant flux of the ninth blue light LED chip unit 32 is 70% to 80% or 60% to 100%. The second full-spectrum fluorescent powders selected for full-spectrum LED devices are as follows: the second cyan powder has a peak emission wavelength range of 490nm to 510nm and a half-wavelength width of 30nm to 40nm under blue light excitation; the second green powder has a peak emission wavelength range of 520nm to 540nm and a half-wavelength width of 95nm to 115nm under blue light excitation; the second yellow powder has a peak emission wavelength range of 570nm to 590nm and a half-wavelength width of 40nm to 70nm under blue light excitation; and the second red powder has a peak emission wavelength range of 650nm to 660nm and a half-wavelength width of 80nm to 100nm under blue light excitation. The full-spectrum LED device obtained by combining the above-mentioned blue light LED chip unit with the second fluorescent colloid showed, as tested, that the light emission effect in the effective combined color temperature range of 2700K to 6500K was essentially the same as that of the full-spectrum LED device shown in Figure 6-2. In other words, both devices showed improved spectral continuity and similarity to natural light, a reduction in the blue light peak, and a significant improvement in both Rf and Rg. Example 3:

[0101] In this example, the peak wavelength range of the eighth blue light LED chip unit 31 of the full-spectrum LED device is 435nm to 440nm, the peak wavelength range of the ninth blue light LED chip unit 32 is 442nm to 463nm, the half-wavelength range of the eighth blue light LED chip unit 31 is 15nm to 25nm, the half-wavelength range of the ninth blue light LED chip unit 32 is 10nm to 20nm, the light radiant flux of the eighth blue light LED chip unit 31 is 100%, and the light radiant flux of the ninth blue light LED chip unit 32 is 60% to 80% or 60% to 100%. The second full-spectrum fluorescent powders selected for full-spectrum LED devices are as follows: the second cyan powder has a peak emission wavelength range of 490nm to 510nm and a half-wavelength width of 35nm to 40nm under blue light excitation; the second green powder has a peak emission wavelength range of 520nm to 540nm and a half-wavelength width of 100nm to 115nm under blue light excitation; the second yellow powder has a peak emission wavelength range of 570nm to 590nm and a half-wavelength width of 45nm to 70nm under blue light excitation; and the second red powder has a peak emission wavelength range of 650nm to 660nm and a half-wavelength width of 85nm to 100nm under blue light excitation. The full-spectrum LED device obtained by combining the above-mentioned blue light LED chip unit with the second fluorescent colloid showed, as tested, that the light emission effect in the effective combined color temperature range of 2700K to 6500K was essentially the same as that of the full-spectrum LED device shown in Figure 6-2. In other words, both devices showed improved spectral continuity and similarity to natural light, a reduction in the blue light peak, and a significant improvement in both Rf and Rg. Example 4:

[0102] In this example, the peak wavelength range of the eighth blue light LED chip unit 31 of the full-spectrum LED device is 432nm to 437nm, the peak wavelength range of the ninth blue light LED chip unit 32 is 458nm to 463nm, the half-wavelength range of the eighth blue light LED chip unit 31 is 15nm to 20nm, the half-wavelength range of the ninth blue light LED chip unit 32 is 10nm to 18nm, and the light radiant flux of the ninth blue light LED chip unit 32 is 60% to 100% of the light radiant flux of the eighth blue light LED chip unit 31. The second full-spectrum fluorescent powders selected for full-spectrum LED devices are as follows: the second cyan powder has a peak emission wavelength range of 490nm to 510nm and a half-wavelength width of 35nm to 40nm under blue light excitation; the second green powder has a peak emission wavelength range of 520nm to 540nm and a half-wavelength width of 100nm to 115nm under blue light excitation; the second yellow powder has a peak emission wavelength range of 570nm to 590nm and a half-wavelength width of 45nm to 70nm under blue light excitation; and the second red powder has a peak emission wavelength range of 650nm to 660nm and a half-wavelength width of 85nm to 100nm under blue light excitation. The full-spectrum LED device obtained by combining the above-mentioned blue light LED chip unit with the second fluorescent colloid showed, as tested, that the light emission effect in the effective combined color temperature range of 2700K to 6500K was essentially the same as that of the full-spectrum LED device shown in Figure 6-2. In other words, both devices showed improved spectral continuity and similarity to natural light, a reduction in the blue light peak, and a significant improvement in both Rf and Rg. Example 5:

[0103] In this example, the peak wavelength range of the eighth blue light LED chip unit 31 of the full-spectrum LED device is 432nm to 437nm, the peak wavelength range of the ninth blue light LED chip unit 32 is 453nm to 463nm, the half-wavelength range of the eighth blue light LED chip unit 31 is 20nm to 25nm, the half-wavelength range of the ninth blue light LED chip unit 32 is 15nm to 20nm, and the optical radiant flux of the ninth blue light LED chip unit 32 is 60% to 100% of the optical radiant flux of the eighth blue light LED chip unit 31. The second full-spectrum fluorescent powders selected for full-spectrum LED devices are as follows: the second cyan powder has a peak emission wavelength range of 500nm to 510nm and a half-wavelength width of 30nm to 40nm under blue light excitation; the second green powder has a peak emission wavelength range of 530nm to 540nm and a half-wavelength width of 95nm to 115nm under blue light excitation; the second yellow powder has a peak emission wavelength range of 580nm to 590nm and a half-wavelength width of 40nm to 70nm under blue light excitation; and the second red powder has a peak emission wavelength range of 650nm to 660nm and a half-wavelength width of 80nm to 100nm under blue light excitation. The full-spectrum LED device obtained by combining the above-mentioned blue light LED chip unit with the second fluorescent colloid showed, as tested, that the light emission effect in the effective combined color temperature range of 2700K to 6500K was essentially the same as that of the full-spectrum LED device shown in Figure 6-2. In other words, both devices showed improved spectral continuity and similarity to natural light, a reduction in the blue light peak, and a significant improvement in both Rf and Rg.

[0104] In this embodiment, as shown in Figure 6-14, the main difference compared to the full-spectrum LED device shown in Figure 6-1 is that the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32 are connected in parallel rather than in series. The full-spectrum LED device shown in Figure 6-14 is also applicable to the aforementioned Examples 1 to 5, and is not limited to these. Furthermore, its light emission performance is comparable to that of the full-spectrum LED device shown in Figure 6-1, but this will not be explained again here.

[0105] From this, it was found that a corresponding full-spectrum LED device can be obtained by flexibly adjusting, as needed, within the range of each performance parameter of the blue light LED chip given in this embodiment, the performance range of the second full-spectrum fluorescent powder, and the mass ratio of the second full-spectrum fluorescent powder to the second colloid, and that the spectral continuity and similarity to natural light of the obtained full-spectrum LED device, as well as all parameters of Rf and Rg, are improved, and the blue light peak value is reduced. Further details will not be explained here. Furthermore, in this embodiment, the peak wavelength ranges of the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32 preferably do not overlap in order to ensure the light emission effect. However, provided that the above-mentioned technical problems that this embodiment aims to solve can be resolved, the peak wavelength ranges of the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32 can also be adjusted to partially overlap as needed, and this setting method is also included within the scope of protection of this embodiment. In this embodiment, it should be understood that the eighth blue light LED chip unit 31 and the ninth blue light LED chip unit 32 may each contain the same number of LED chips or different numbers of LED chips.

[0106] In this embodiment, the second cyanide powder in each of the above examples may be, but is not limited to, BaSi2O2N2:Eu2+ nitride. The second green powder may be, but is not limited to, Lu3Al5O12:Ce3+ aluminate. The second yellow powder may be, but is not limited to, Ba2SiO4:Eu2+ silicate or SiAlON:Eu2+, etc. The second red powder may be, but is not limited to, Sr,CaAlSiN3:Eu2+ nitride. This embodiment does not limit the specific materials of the second cyanide powder, second green powder, second yellow powder, and second red powder.

[0107] For ease of understanding, this embodiment illustrates the manufacturing process of a full-spectrum LED device. Manufacturing examples include, but are not limited to, the following:

[0108] S201: Combines matching blue light LED chips.

[0109] For example, the peak wavelength range of the 8th blue light LED chip unit is selected to be 432nm to 437nm, the peak wavelength range of the 9th blue light LED chip unit is selected to be 458nm to 463nm, the half-wavelength range of the 8th blue light LED chip unit is selected to be 15nm to 25nm, the half-wavelength range of the 9th blue light LED chip unit is selected to be 10nm to 20nm, and the light radiant flux of the 9th blue light LED chip unit is selected to be 60% to 100% of the light radiant flux of the 8th blue light LED chip unit 31.

[0110] S202: Contains a second full-spectrum fluorescent powder.

[0111] In this example, in order to match the blue light distribution described above, it is preferable that the second full-spectrum fluorescent powder includes a second cyan powder, a second green powder, a second yellow powder, and a second red powder to synthesize a new spectral effect. For example, the second cyan powder in the second full-spectrum fluorescent powder has a peak wavelength range of 490 nm to 510 nm and a half-wavelength range of 30 nm to 40 nm, and its system may be, but is not limited to, nitrogen oxides BaSi2O2N2:Eu2+. The second green powder has a peak wavelength range of 520 nm to 540 nm and a half-wavelength range of 95 nm to 115 nm, and its system may be, but is not limited to, aluminate Lu3Al5O12:Ce3+. The second yellow powder has a peak wavelength range of 570 nm to 590 nm and a half-wavelength range of 40 nm to 70 nm. Its system may be, but is not limited to, silicates such as Ba2SiO4:Eu2+ or SiAlON:Eu2+. The second red powder has a peak wavelength range of 650 nm to 660 nm and a half-wavelength range of 80 nm to 100 nm. Its system may be, but is not limited to, nitrides such as Sr,CaAlSiN3:Eu2+.

[0112] S203: Prepare the semi-finished product package carrier and perform die bonding.

[0113] For example, if the manufactured full-spectrum LED device is an SMD LED lamp bead, a corresponding second LED bracket can be prepared accordingly, and the eighth blue light LED chip unit and the ninth blue light LED chip unit prepared in S201 can be placed in the second bowl cup of the second LED bracket, and the two can be connected in series or parallel.

[0114] If the manufactured full-spectrum LED device is a COB light source, a second substrate can be prepared accordingly, and the eighth blue light LED chip unit and the ninth blue light LED chip unit prepared in S201 can be arranged in series on the second substrate.

[0115] In this example, the blue light LED chip can be fixed to the second LED bracket or second substrate by die bonding adhesive (but not limited to it), or the die bonding adhesive can be fully cured by baking at 150°C (but not limited to it) for 1 to 2 hours. The blue light LED chips can also be connected to each other, and to the bracket or second substrate, with welding wire as needed. The welding wire is generally 0.9 mil 80% Au, using M-wire or S-wire arc technology. The method of connecting the welding wire depends on the design of the bracket structure and the blue light LED chip structure, as long as circuit conductivity is achieved.

[0116] S204: Manufactures the second fluorescent colloid.

[0117] Taking the manufacturing scheme for a full-spectrum LED device at a color temperature of 5000K shown in Figure 6-2 as an example, the mass ratio range of the second full-spectrum fluorescent powder to the second colloid used is 1:3 to 1:1, and the proportions of the second full-spectrum fluorescent powder combinations are as follows: Second cyan powder: Second green powder: Second yellow powder: Second red powder is 5% to 10%: 75% to 85%: 0% to 5%: 5% to 15%. Taking the manufacturing scheme for a full-spectrum LED device at a color temperature of 5000K shown in Figure 6-3 as an example, the mass ratio range of the second full-spectrum fluorescent powder to the second colloid used is 1:4 to 1:1, and the proportions of the second full-spectrum fluorescent powder combinations are as follows: Second cyan powder: Second green powder: Second yellow powder: Second red powder is 5% to 15%, 75% to 85%, 0% to 5%, and 5% to 15%. Subsequently, the mixture is vibrated in a mixer to ensure uniform mixing, with stirring conditions typically ranging from 200 to 400 seconds and a rotation speed of 1000 to 2000 revolutions per minute. By adjusting the concentration ratio of the second full-spectrum fluorescent powder combination to the second colloid (e.g., silica gel can be used, but is not limited to this), and the proportions of the powders within the second full-spectrum fluorescent powder combination, advantageous spectral schemes for different color temperature ranges can be obtained. It should be understood that there is no strict order to the four steps S201 to S204 described above; they can be performed sequentially, or at least some steps can be performed in parallel, but this is not limited to this.

[0118] S205: Perform packaging.

[0119] The manufactured second fluorescent colloid is potted in the second bowl cup of the second LED bracket or on the second substrate to cover each blue light LED chip, and the second fluorescent colloid is cured by baking. The baking conditions are, for example, 3 to 4 hours at 150°C, but are not limited to this. This makes it possible to manufacture the full-spectrum LED device of this embodiment.

[0120] The full-spectrum LED device manufactured based on this embodiment provides a low-blue light full-spectrum effect that closely matches the spectral curve of natural light, significantly improving light quality and playing a crucial role in accelerating the development of future lighting and displays.

[0121] This embodiment also provides an LED assembly including the low-blue-light full-spectrum LED device described above. Specific application areas of this LED assembly refer to, but are not limited to, the LED assembly of Embodiment 1 described above, and are not repeated here. Example 3

[0122] Conventional LED packaging devices include an LED bracket, an LED chip, a bonding layer, bonding wires, and a packaging adhesive. In this LED packaging technology, a bonding layer is first provided inside the cup of the LED bracket, then the LED chip is attached to the bonding layer, followed by welding the bonding wires, and finally, the packaging adhesive is injected into the bracket cup after welding is complete. The finished LED is then baked to cure. When silica gel is injected into the bracket as the packaging adhesive, its high oxygen and moisture permeability allows moisture to easily penetrate during long-term use, resulting in poor bonding between the bonding layer and the functional area at the bottom of the bracket cup, and consequently, LED failure. On the other hand, when epoxy resin is injected into the bracket as the packaging adhesive, although epoxy resin adhesive has relatively low oxygen and moisture permeability, it has relatively high stress, so when the LED packaging device undergoes high-temperature reflow soldering, high thermal stress is generated, causing the bonding wires to break or the bonding layer at the bottom of the chip to peel off from the bracket, resulting in LED failure. It has been found that both of the above LED packaging technologies have serious defects and need to be improved urgently. The LED device provided in this embodiment effectively reduces the effects of moisture, oxygen, and thermal stress on the performance of the LED device, resulting in more stable overall performance and contributing to an extended service life.

[0123] Furthermore, it should be understood that the LED device in this embodiment can be implemented independently of other embodiments. For ease of understanding, the following embodiments will describe the LED device illustratively.

[0124] As shown in Figures 7-1 and 7-2, the LED device of this embodiment includes a third LED bracket 50, and the light-emitting unit of the LED device includes a third light-emitting unit, the third light-emitting unit is composed of an LED chip 54, the third LED bracket 50 has a chip mounting area inside, a bonding layer 55 is provided in the chip mounting area, and the LED chip 54 is provided on the bonding layer 55. The LED device has a resin protective layer 56 and a packaging adhesive layer 57, the resin protective layer 56 covers the LED chip 54 and the bonding layer 55, and the bonding strength of the LED chip 54 fixed to the third LED bracket 50 is improved by the resin protective layer 56 covering the bonding layer 55. The packaging adhesive layer 57 covers the LED chip 54 and the resin protective layer 56, and the oxygen and moisture permeability of the resin protective layer 56 is lower than that of the packaging adhesive layer 57. In this embodiment, the oxygen and moisture permeability of the resin protective layer 56 are lower than that of the packaging adhesive layer 57, respectively. Specifically, the resin protective layer 56 is formed by curing an epoxy resin adhesive, and the packaging adhesive layer 57 is formed by curing a silicone resin or silica gel, or the resin protective layer 56 is formed by curing a silicone resin, and the packaging adhesive layer 57 is formed by curing a silica gel. Compared to the conventional structure in which only silica gel is injected into the LED bracket to cover the LED chip and bonding layer, in this embodiment, using epoxy resin adhesive or silicone resin as the resin protective layer 56 provides lower oxygen and moisture permeability than using silicone resin or silica gel as the packaging adhesive. Therefore, in conventional LED devices, moisture and oxygen can easily penetrate into the bonding layer between the LED chip and the LED bracket, effectively preventing lamp failure. On the other hand, compared to the conventional structure in which only epoxy resin adhesive is injected into the LED bracket to package the LED chip and bonding layer, epoxy resin adhesive has relatively low oxygen and moisture permeability, but relatively high thermal stress. When a high-power chip is packaged with epoxy resin adhesive, cracks are more likely to occur in the epoxy resin adhesive due to the operation of the high-power chip.In this case, cracks in the epoxy resin adhesive exposed on the outside of the LED device allow external water vapor to easily penetrate into the LED device, affecting the bonding strength between the LED chip and the LED bracket. Furthermore, cracks in the epoxy resin adhesive exposed on the outside of the LED device also affect the optical effect. In this embodiment, only epoxy resin adhesive is used as the resin protective layer, and the resin protective layer is placed only on the surface of the bonding layer 55 and near the LED chip 54, so the outside of the resin protective layer 56 is covered with silicone resin or silica gel. Because the resin protective layer 56 has low oxygen and moisture permeability, the possibility of delamination between the LED chip 54 and the third LED bracket 50 in the bonding layer 55 can be reduced. In addition, because silicone resin or silica gel has lower thermal stress, the possibility of cracks occurring on the outer surface of the packaging adhesive layer 57 can be reduced. Therefore, the LED device of this embodiment has higher heat resistance and superior airtightness, resulting in a longer lifespan.

[0125] Optionally, the resin protective layer 56 also covers the front and periphery of the LED chip 54. In some applications, the LED chip 54 is typically covered with the resin protective layer 56, but the thickness of the resin protective layer on the LED chip 54 is not particularly limited.

[0126] Optionally, the outer shape of the coupling layer 55 is circular, and the bottom outer edge of the LED chip 54 is located within the coupling layer 55. Specifically, in this embodiment, the coupling layer is provided in the chip mounting area, the outer shape of the formed coupling layer 55 is (approximately) circular, and the bottom outer edge of the LED chip 54 is square and located within the coupling layer 55.

[0127] Optionally, the thickness range of the resin protective layer 56 is 10 μm to 60 μm, which effectively increases the bonding force between the bonding layer 55 and the third LED bracket 50.

[0128] In some examples, the resin protective layer 56 is a silicone resin layer, but is not limited to this. The packaging adhesive layer 57 is a silica gel layer, but is not limited to this. The oxygen and moisture permeability of the silicone resin layer is lower than that of the silica gel layer, and the thermal stress of the silicone resin layer is greater than that of the silica gel.

[0129] Optionally, the third LED bracket 50 includes a base plate 51, an isolation portion 52, and a dam portion 53 provided on the base plate 51 and surrounding the LED chip. The base plate 51 has a functional area exposed to the dam portion, and the isolation portion 52 is partially exposed to the dam portion 53, dividing the functional area into a larger first functional area 511 and a smaller second functional area 512. The LED chip 54 is provided in the larger first functional area 511, thereby increasing heat dissipation of the LED chip 54. The LED device includes a first bonding wire 58, one end of which is connected to the second functional area 512 of the base plate 51, and the other end of which is connected to the LED chip 54. A packaging adhesive layer 57 covers the LED chip 54 and the first bonding wire 58. The LED device is equipped with a package adhesive layer 57 (e.g., silica gel or silicone resin) with relatively low thermal stress, and a resin protective layer 56 (e.g., epoxy resin adhesive) with relatively low oxygen and moisture permeability. Specifically, the package adhesive layer 57 with relatively low thermal stress covers the first bonding wire 58, and the resin protective layer 56 with relatively low oxygen and moisture permeability covers the LED chip 54 and the joint between the LED chip 54 and the third LED bracket 50. The package adhesive layer 57 with low thermal stress can reduce the stress on the first bonding wire 58 after heating. In other words, the thermal stress on the joint between the first bonding wire 58 and the LED chip 54, or between the first bonding wire 58 and the third LED bracket 50, is reduced, and the probability of the first bonding wire 58 breaking due to stress is reduced. In addition, the resin protective layer 56 with low oxygen and moisture permeability makes the joint between the LED chip 54 and the third LED bracket 50 less likely to peel off, making the overall structure of the LED device more stable and extending the lifespan of the LED device.

[0130] In some application examples, the LED device is obtained by the following steps, but is not limited to these: The third LED bracket 50 is fixed to the platform jig of the die bonding machine, die bonding adhesive is applied to the base plate 51 located in the first functional area 511, and after dispensing is complete, the LED chip 54 is fixed to the die bonding adhesive. Once die bonding is complete, it is sent to an oven to bake and cure to form a bonding layer 55. The oven temperature may be set to 100-200°C. The die-bonded and baked product is placed on the platform of a wire welding machine, one end of the first bonding wire 58 is welded to the electrode of the LED chip 54, and the other end of the first bonding wire 58 is welded to the base plate 51 located in the second functional area 512. Once wire welding is complete, resin adhesive is sprayed or applied to the surface of the LED chip 54 and the surface of the die bonding adhesive, and it is placed in an oven to bake and cure to form a resin protective layer 56 with a thickness of approximately 10-60 μm. The baking temperature may be set to 80-170°C. After spraying and baking, the packaging adhesive is applied using a dispenser, and after application is complete, it is baked in an oven at 100-160°C to cure, forming the packaging adhesive layer 57. After baking and curing, it is removed and stamped and peeled off to obtain a reliable finished LED package.

[0131] This embodiment also provides an LED assembly, also known as an LED light board, whose application areas may refer to, but are not limited to, the LED assembly shown in Embodiment 1 above. The LED assembly includes a circuit board on which the above-mentioned LED devices are provided.

[0132] Compared to conventional technology in which the bonding layer between the LED chip and the LED bracket was covered only with packaging adhesive, this embodiment adds a resin protective layer 56 with a lower oxygen and moisture permeability than the packaging adhesive between the packaging adhesive and the LED chip in the LED device and LED assembly. This effectively prevents moisture or oxygen from easily penetrating the bonding layer between the LED chip and the LED bracket in the LED device, reducing bonding strength and causing lamp failure. The packaging adhesive covering the resin protective adhesive can be selected as needed, without being limited by oxygen and moisture permeability. The LED device provided in this embodiment has a more stable overall structure and a longer service life. Example 4

[0133] In related technologies, the irradiance distribution of an LED chip as a point light source is symmetrical on the surface of the object, and this is generally called the emission angle or radiation angle. The optical angle in conventional optoelectronic package structures is approximately 120°. Conventional narrow-angle optoelectronic devices are generally lens-type extended light sources. The usual operation is to place a curved lens layer on top of the point light source. Typically, narrow-beam Lambert angle product designs can only be combined with one press mold. For example, the three products with different emission angles, Figure 8-13a (LED device product with emission angle of 90°), Figure 8-13b (LED device product with emission angle of 60°), and Figure 8-13c (LED device product with emission angle of 30°), each require the combination of lenses of different sizes. The lenses are molded by pressing or liquid processing. Conventional narrow-beam angle photoelectronic devices require lens replacement in secondary light distribution design when the required emission angle changes. Furthermore, the narrower the required emission angle, the longer the distance from the center point of the outer curved surface of the lens to the light source, increasing the overall size of the device and requiring readjustment of other related components. Therefore, conventional devices that use lenses for light distribution have multiple sizes even within the same series, resulting in limited design flexibility. It should also be understood that the LED device in this embodiment can be implemented independently of other embodiments. To facilitate understanding, this embodiment will describe the LED device exemplified below.

[0134] As shown in Figures 8-1, 8-2, 8-3, and 8-4, the LED device provided in this embodiment includes a third substrate 61, the third substrate 61 includes an electrical connector for connection to a power supply, and the light-emitting unit of the LED device includes a fourth light-emitting unit 64, the fourth light-emitting unit 64 is provided on the third substrate 61 and electrically connected to the electrical connector. The LED device further includes a reflective adhesive enclosure 613 provided on the third substrate 61, the reflective adhesive enclosure 613 is arranged to surround the fourth light-emitting unit 64 and form an enclosed region, and the package layer includes a reflective gel portion 614 located within the enclosed region of the reflective adhesive enclosure 613, the reflective gel portion 614 is in contact with the side wall of the fourth light-emitting unit 64 and avoids at least a portion of the fourth light-emitting unit 64 on the side opposite to the third substrate 61, thereby the reflective gel portion 614 defines a cavity region, and the cross-sectional area of ​​the cavity region increases in the direction opposite to the third substrate 61. In this embodiment, since the reflective structure is formed by injecting a reflective gel into an enclosed region, it was found that the structure of the reflective gel portion can be designed according to the emission angle requirements. During design, only the inner wall structure of the reflective gel can be adjusted, resulting in a light source assembly with advantages such as a narrow beam, small volume, freely controllable pattern design, and high optical energy output. This allows for the maintenance of the same external size and specifications across devices in the same series, enabling standardized use at the application end. The ability to accommodate different narrow beam optical angles with a single specification size improves product versatility and increases the freedom of terminal product design.

[0135] In this embodiment, the electrical connector may include a positive connector and a negative connector. In one application example, the fourth light-emitting unit 64 can be fixed to the third substrate 61 via the positive or negative connector by fixing it to the larger of the two connectors, either by adhesive or welding. Alternatively, the fourth light-emitting unit 64 may be fixed directly to the third substrate 61 by welding.

[0136] In this embodiment, since the reflective adhesive enclosure 613 is distributed in a ring shape, a region enclosed within the reflective adhesive enclosure 613 is formed, and the fourth light-emitting unit 64 is arranged within this enclosed region. When light waves strike the reflective adhesive enclosure 613, they are reflected, and the region enclosed by the reflective adhesive enclosure 613 is used as an area for processing and installation.

[0137] In this embodiment, the reflective adhesive enclosure 613 and the third substrate 61 can be integrally molded before the fourth light-emitting unit 64 is provided. The material of the reflective adhesive enclosure 613 can be a thermoplastic such as PPA (polyphthalamide) or PCT (polycyclohexanedimethanol terephthalate), or a thermosetting plastic such as EMC (epoxy molding compound). The reflective adhesive enclosure 613 is bonded to the third substrate 61, which is made of a metal material such as copper, by processes such as injection molding, die casting, or press molding. Alternatively, after the fourth light-emitting unit 64 is provided, the reflective adhesive enclosure 613 can be formed on the third substrate 61 by thermoplastic press molding using an epoxy resin adhesive containing 10% to 30% titanium dioxide particles.

[0138] In this embodiment, the fourth light-emitting unit 64 is used as an example of a light-emitting chip for explanation. In this embodiment, it is understood that the light-emitting chip is the light source. A reflective gel portion 614 is provided within an enclosed area formed within the reflective adhesive enclosure 613, and the reflective gel is applied to the enclosed area between the fourth light-emitting unit 64 and the reflective adhesive enclosure 613 using a piezoelectric valve pulse injection method. The reflective gel portion 614 is usually composed of high-reflectance particles and a high-refractive-index, high-thixotropic benzene-based adhesive, thereby achieving a reflectance of over 99% of the reflective gel portion 614. The high-reflectance particles consist of a mixture of materials such as titanium dioxide or zirconium dioxide particles with a content of more than 90% and hydrophobic silicon powder with a content of less than 3%. The high-refractive-index, high-thixotropic benzene-based adhesive has a high refractive index of more than 1.55 and possesses the characteristics of high viscosity and high thixotropy. The reflective gel portion 614 has a viscosity of 10,000 mPa·s and can be molded directly into the enclosed area using a piezoelectric valve pulse injection method without the need for a mold. The shape of the reflective gel portion 614 within the enclosed area is well maintained. The desired shape of the reflective gel portion 614 can be formed by various forms of surrounding spray dispensing. This allows for the design of reflective surfaces at different angles and the formation of desired light emission angles. For example, the shapes shown in Figures 8-3 and 8-4 are formed by bake curing. The reflective gel portion 614 surrounds the side of the light source, avoiding at least a portion of the light source on the side opposite to the third substrate 61, thereby defining a cavity region. The cross-sectional area of ​​the cavity region increases in the direction opposite to the third substrate 61. That is, the inner wall of the reflective gel portion 614 forms an obtuse angle with the surface of the light source. As a result, the light emitted from the light source and reaching the surface of the reflective gel portion 614 is better reflected and reaches the target light-receiving surface, thereby giving the target light-receiving surface a better light-receiving effect. The reflective gel portion 614 is formed within the region enclosed by the reflective adhesive enclosure wall. If it becomes necessary to change the required light emission angle during the product design stage, the desired light emission angle can be formed without changing the overall size of the product simply by adjusting the angle between the reflective gel portion 614 and the surface of the light source.This ensures good size consistency among devices in the same series (devices that only adjust the emission angle when the light source is the same are called devices in the same series). In this embodiment, by forming a reflective structure by injecting a reflective gel into an enclosed region, the structure of the reflective gel portion 614 can be designed according to the usage requirements, resulting in a light source assembly with advantages such as a narrow beam, small volume, freely controllable pattern design, and high optical energy output. This allows devices in the same series to maintain the same external size and specifications, enabling standardized use at the application end. A single specification size can accommodate designs with different narrow beam optical angles, improving product versatility and increasing the freedom of terminal product design.

[0139] As shown in Figure 8-5, in some examples, the reflective gel portion 614 is located on the side of the fourth light-emitting unit 64 and includes a first adhesive layer 615 surrounding the fourth light-emitting unit 64, and a second adhesive layer 616 provided on the first adhesive layer 615 and defining the cavity region. In one embodiment, the viscosity of the second adhesive layer 616 is greater than the viscosity of the second adhesive layer 616.

[0140] To obtain a better light emission effect and reduce the difficulty of process implementation, in some examples of this embodiment, the prepared high-reflectivity adhesive may be applied to the enclosed area between the fourth light-emitting unit 64 and the reflective adhesive enclosure wall 613 using piezoelectric valve pulse injection to form a first adhesive layer 615. The height of the cured first adhesive layer 615 is close to the height of the fourth light-emitting unit 64 and not higher than the height of the fourth light-emitting unit 64. The high-reflectivity adhesive used to form the first adhesive layer 615 has high reflectivity, and the first adhesive layer 615 covers the sides of the fourth light-emitting unit 64, thereby suppressing the emission of light waves from the sides of the fourth light-emitting unit 64 as much as possible, thereby increasing the intensity of light waves emitted from the front. Typically, in order to firmly apply this high-reflectivity adhesive to the sides of the light source, the high-reflectivity adhesive needs to have a certain degree of fluidity. Another high-reflectivity adhesive is injected onto the cured first adhesive layer 615 to form a second adhesive layer 616. Another high-reflectivity adhesive used here is a single-component paste due to its excellent thixotropy and viscosity. Dispensing allows for better shaping and more precise control of the wave emission angle.

[0141] As shown in Figures 8-2 to 8-7, in some examples, the LED device further includes a transparent gel 617 covering the fourth light-emitting unit 64 on the side opposite to the third substrate 61, the transparent gel 617 being located within the cavity region, and the side of the transparent gel 617 opposite to the fourth light-emitting unit 64 being concave.

[0142] A transparent gel 617 with a concave surface is provided above the fourth light-emitting unit 64, protecting the upper surface of the fourth light-emitting unit 64 and functioning as a light refraction medium. In another embodiment, if the fourth light-emitting unit 64 is a vertical LED chip or a face-up LED chip, electrical connection wiring (i.e., the second bonding wire 62) needs to be connected to the electrical connector 63, and the transparent gel 617 can also protect the electrical connection wiring (fourth light-emitting unit) structure of the fourth light-emitting unit 64.

[0143] Optionally, a transparent high refractive index benzene-based adhesive can be prepared and, prior to formal dispensing, the surface of the reflective gel portion 614 can be cleaned using a plasma cleaning process (but not limited to this) by oxidation or physical impact with hydrogen and inert argon gas to strengthen the bonding force between the transparent gel 617 and the reflective gel portion 614. The transparent gel 617 is applied by dispensing to the surface directly above the fourth light-emitting unit 64, forming a concave surface on the side of the transparent gel 617 opposite to the fourth light-emitting unit 64. According to a conventional pattern design scheme, the required concave shape can be formed by dispensing, and the desired light emission angle can be formed by combining the high-reflectance surfaces of the reflective gel portion 614 at different angles. In this embodiment, the concave transparent gel 617 is used to refract and focus light, concentrate edge rays, and increase the light emission intensity of axial light.

[0144] As shown in Figure 8-8, in some examples, the transparent gel 617 includes a reinforcing adhesive layer 618 that covers the fourth light-emitting unit 64 on the side opposite to the third substrate 61 and has a convex curved surface on the side opposite to the fourth light-emitting unit 64, and a protective adhesive layer 619 that covers the surface of the reinforcing adhesive layer 618 and is located between the protective adhesive layer 619 and the fourth light-emitting unit 64.

[0145] In the adhesive injection process, adhesive is first dispensed onto the fourth light-emitting unit 64, covering the upper surface of the fourth light-emitting unit 64 to form a reinforcing adhesive layer 618. Due to the action of the colloid's surface tension, the reinforcing adhesive layer 618 maintains a convex curved shape, preventing the gel from overflowing. The reinforcing adhesive layer 618 hardens after a short bake. The convex curved surface of the reinforcing adhesive layer 618 protects the upper surface of the fourth light-emitting unit 64 and provides a light-emitting opening for the fourth light-emitting unit 64. Next, the prepared reflective gel portion 614 is applied to the enclosed area between the fourth light-emitting unit 64 and the reflective adhesive surrounding wall 613 using a piezoelectric valve pulse injection method to form the reflective gel portion 614. The reflective gel portion 614 is higher than the fourth light-emitting unit 64 and does not cover the reinforcing adhesive layer 618. After hardening by a short bake, a high refractive index transparent adhesive layer is dispensed onto the reinforcing adhesive layer 618, and finally baked to harden and mold it. The upper arcuate surface of the reinforcing adhesive layer 618 supports the radiating surface and prevents the reflective gel portion 614 from blocking the wave on the front of the fourth light-emitting unit 64. The reflective gel portion 614 covers the sides of the fourth light-emitting unit 64 and forms an angle with the surface of the fourth light-emitting unit 64, forming a light-emitting structure of a certain shape around the smooth arcuate surface of the reinforcing adhesive layer 618, thereby satisfying the narrow-angle requirement.

[0146] In one example, the fourth light-emitting unit 64 in this embodiment is a narrow-angle beam photoelectronic device and includes a light-emitting chip that emits a visible light signal, or a radiation source that emits an invisible light signal, and the radiation source may be a light-emitting chip that emits an invisible light signal. For ease of understanding, the following explanation will use the case where the fourth light-emitting unit 64 is an LED chip that emits a visible light signal as an example. As shown in Figures 8-9 and 8-10, the LED chip includes a base 65 provided on a third substrate 61, a first distributed Bragg reflector 66 provided on the base 65, a first gallium nitride layer 67 provided on the first distributed Bragg reflector 66 with the first distributed Bragg reflector 66 positioned between it and the base 65, a multiple quantum well layer 68 provided on the first gallium nitride layer 67 with the first gallium nitride layer 67 positioned between it and the first distributed Bragg reflector 66, a second gallium nitride layer 69 provided on the multiple quantum well layer 68 with the multiple quantum well layer 68 positioned between it and the first gallium nitride layer 67, and a second distributed Bragg reflector 610 provided on the second gallium nitride layer 69 with the second gallium nitride layer 69 positioned between it and the multiple quantum well layer 68.

[0147] To achieve a better narrow-angle, high-efficiency effect, the LED chip provided in this embodiment is a narrow-angle chip, and the light emission angle of the LED chip is ≤90°.

[0148] In this embodiment, the LED chip is provided with a multilayer distributed Bragg mirror on the side of the first gallium nitride layer 67 and the second gallium nitride layer 69 that is away from the multiple quantum well layer 68. The distributed Bragg mirror is designed to consist of thin film layers in which different materials with high and low refractive indices are alternately stacked. In this embodiment, it is constructed by alternately stacking ultrathin silicon dioxide and titanium dioxide, with the thickness of each layer being 1 / 4 of the central wavelength of light. Here, the first distributed Bragg mirror 66 is the radiating layer, with approximately 30 to 40 logarithmic pairs of layers and an overall reflectivity of approximately 99.9%. According to the principle of reflection, when light is radiated from a photosensitive medium n1 to a photosensitive medium n2 (refractive index n2 > n1), the reflected light undergoes half-wavelength loss at the interface, its phase changes, and the refracting trajectory of the light changes. When the reflected light is incident on the first distributed Bragg mirror 66, it is reflected once each from the upper and lower surfaces of each layer. According to the design principle of the first distributed Bragg reflector 66, the two distributed Bragg reflector layers, i.e., the two emitted rays, overlap and amplify in phase, thereby improving the overall reflection coefficient. The second distributed Bragg reflector 610 is a piezoelectric optical layer consisting of approximately 20 to 30 pairs of layers, utilizing the lattice refraction principle of a distributed Bragg reflector. The propagation speed of light is slower in media with a high refractive index and faster in media with a low refractive index. By utilizing this lattice characteristic, the reflection efficiency and reflection angle of light can be controlled. By arranging the first distributed Bragg reflector 66 and the second distributed Bragg reflector 610, the first distributed Bragg reflector 66 exerts the effect of a reflective surface and also controls the emission angle of light. The second distributed Bragg reflector 610 mainly plays a role in piezoelectric optics and adjusting the emission angle of light.

[0149] As shown in Figures 8 and 9, in some examples the light-emitting chip further includes an oxide mirror layer 611, which is arranged surrounding the multiple quantum well layer 68.

[0150] To further restrict the emission angle of the light-emitting chip and obtain a smaller emission angle, an oxide mirror layer 611 is further provided on the side surface of the multiple quantum well layer 68. The oxide mirror layer 611 is usually made of aluminum oxide material and is obtained by a wet oxidation process. The oxide mirror layer 611 is used to restrict light emission from the side walls and improve axial light emission.

[0151] As shown in Figures 8-9, in some examples the light-emitting chip further includes an anti-reflective coating 612 provided on a second distributed Bragg reflector 610, the second distributed Bragg reflector 610 being located between the second gallium nitride layer 69 and the anti-reflective coating 612.

[0152] As shown in Figures 8-9 and 8-12, the symbol L represents the propagation path of totally reflected light. To improve light emission efficiency and reduce totally reflected light, an anti-reflective coating 612 is provided on the surface of the light-emitting surface above the second distributed Bragg mirror 610. This layer is a surface microstructure with a certain regularity that is directly formed on the light-emitting surface of the light-emitting chip. By increasing the bonding shape of the interface between the light-emitting chip surface and air, the critical angle of totally reflected light increases, the number of totally reflected rays decreases, and the light emission efficiency improves. All of the above process settings are for obtaining a light-emitting chip with a narrow beam and high light emission efficiency. Note that the narrow-angle, high-efficiency chip is not limited to the face-up type chip shown in the figure, and the anti-reflective coating can be equally or more effective on vertical type chips and flip-chip type chips as well.

[0153] As shown in Figure 8-11, it is common practice to perform simulations using Monte Carlo ray tracing before determining the optical design scheme. Rays emitted from the edge of a light source are tuned by the optical system and irradiated onto the edge of the target surface. Rays originate from the surface of a randomly selected point light source and are emitted randomly into space. During transmission, when light encounters an optical medium, it undergoes corresponding reflection, refraction, or total internal reflection. In the simulation, each ray emitted from the light source carries a specific light energy determined by the characteristics of the light source. During the transmission of the ray, the light energy of each ray changes according to the ray loss in the optical system (absorption, Fresnel loss, etc.). Finally, statistical analysis is performed on all rays on the set light-receiving surface to obtain the light energy distribution on the light-receiving surface. The structure of the reflective gel portion 614 is designed according to the usage requirements and combined with experimental verification results of multiple schemes to obtain different narrow-angle beam manufacturing schemes, ultimately forming different narrow-angle beam optoelectronic devices.

[0154] In this embodiment, a method for manufacturing the above-described LED device is proposed, which includes the following steps: S301: Prepare the third circuit board. S302: A fourth light-emitting unit is provided on the third substrate. S303: A reflective adhesive enclosure is formed on the third substrate so that the reflective adhesive enclosure surrounds the fourth light-emitting unit and forms an enclosed region. S304: Reflective gel is injected into the enclosed area of ​​the reflective adhesive wall, forming a reflective gel portion in the enclosed area. In this embodiment, a method for manufacturing the LED device, which is used to manufacture the above-mentioned LED device and includes the following steps, is also proposed. S401: Prepare a third substrate and form a reflective adhesive enclosure on it, so as to form a region enclosed by the reflective adhesive enclosure. S402: A fourth light-emitting unit is provided on the third substrate, and the fourth light-emitting unit is positioned within an enclosed area formed by a reflective adhesive wall. S403: Reflective gel is injected into the enclosed area of ​​the reflective adhesive enclosure, forming a reflective gel portion in the enclosed area.

[0155] In the two LED device manufacturing methods described above, the reflective adhesive enclosure is positioned to surround the fourth light-emitting unit, forming an enclosed region, and the reflective gel portion contacts the side wall of the fourth light-emitting unit, avoiding at least a portion of the fourth light-emitting unit on the side opposite to the third substrate, thereby defining a cavity region with the reflective gel portion, and increasing the cross-sectional area of ​​the cavity region in the direction opposite to the third substrate.

[0156] In the manufacturing methods of the two LED devices exemplified above, a reflective gel is injected into a surrounded area. When the reflective gel hardens, a reflective gel portion is formed within the surrounded area. By piezoelectric valve pulse injection, the reflective gel is applied to the surrounded area between the fourth light-emitting unit and the reflective adhesive wall. The reflective gel portion surrounds the side of the fourth light-emitting unit, and the reflective gel portion forms a predetermined angle with the surface of the fourth light-emitting unit. As a result, light waves emitted from the fourth light-emitting unit and reaching the surface of the reflective gel portion are better reflected and reach the target light-receiving surface, thereby giving the target light-receiving surface a better light wave receiving effect. The reflective gel portion is generally composed of high-reflectance particles and a high-refractive index, high-thixotropic benzene-based adhesive, and the reflectance of the reflective gel portion exceeds 99%. The high-reflectance particles consist of a mixture of materials such as titanium dioxide or zirconium dioxide particles with a content of more than 90% and hydrophobic silicon powder with a content of less than 3%. High refractive index, high thixotropy benzene-based adhesives have a high refractive index exceeding 1.55, as well as high viscosity and high thixotropy, which maintain the shape within the enclosed area of ​​the formed reflective gel portion. Desired shapes of the reflective gel portion can be formed by various forms of surrounding spray dispensing, thereby enabling the design of reflective surfaces at different angles. For example, bake curing forms the shapes shown in Figures 8-3 and 8-4. The reflective gel portion can reflect or refract light waves, thereby limiting the wave radiation angle.

[0157] In this embodiment, by forming a reflective structure by injecting a reflective gel into a surrounding region, the structure of the reflective gel portion can be designed according to the usage requirements, eliminating the need to open a separate mold and perform injection molding. As a result, the resulting LED device has advantages such as a narrow beam, small volume, freely controllable pattern design, and high optical energy output. At the same time, even products with different narrow beam angles can maintain a single size and specifications, enabling standardized use at the application end. The ability to accommodate different narrow beam optical angles with a single specification size contributes to improved product versatility.

[0158] In some examples, injecting a reflective gel into the enclosed region of the reflective adhesive enclosure includes applying a first adhesive layer onto a third substrate such that the first adhesive layer is located on the side of the fourth light-emitting unit and surrounds the fourth light-emitting unit, and after the first adhesive layer has cured, applying a second adhesive layer having a higher viscosity than the first adhesive layer on top of the first adhesive layer.

[0159] To obtain a better light emission effect and reduce the difficulty of process implementation, the prepared high-reflectivity adhesive can be applied to the enclosed area between the fourth light-emitting unit and the reflective adhesive enclosure using piezoelectric valve pulse injection. The height of the first adhesive layer after curing is close to the height of the fourth light-emitting unit and not higher than the height of the fourth light-emitting unit. When the high-reflectivity adhesive has cured to form the first adhesive layer, a plasma cleaning process is used to prepare for bonding with the next high-reflectivity adhesive. A second adhesive layer is formed by further applying high-reflectivity adhesive on the cured first adhesive layer. The high-reflectivity adhesive here is a single-component paste due to its excellent thixotropy and viscosity. Dispensing allows for better shape acquisition and more appropriate control of the wave emission angle.

[0160] In the above manufacturing method 1, the reflective adhesive enclosure can be integrally molded with the third substrate. The material of the reflective adhesive enclosure can be a thermoplastic such as PPA (polyphthalamide) or PCT (polycyclohexanedimethanol terephthalate), or a thermosetting plastic such as EMC (epoxy molding compound). The reflective adhesive enclosure is bonded to the third substrate, which is made of a metal material such as copper, by processes such as injection molding, die casting, or press molding. In the above manufacturing method 2, after providing the fourth light-emitting unit, the reflective adhesive enclosure is molded onto the third substrate by thermoplastic pressing using an epoxy resin adhesive containing 10-30% titanium dioxide particles. This method of molding the reflective adhesive enclosure allows for free design of the size of the fourth light-emitting unit and reduces the additional cost of opening a mold for the third substrate.

[0161] In some examples, after injecting the reflective gel into the enclosed region of the reflective adhesive enclosure, the inner wall of the cavity region is cleaned with plasma, and the transparent gel is further injected into the cavity region such that the transparent gel covers the fourth light-emitting unit opposite the third substrate and the end face of the transparent gel opposite the fourth light-emitting unit is concave.

[0162] A concave lens layer is positioned above the fourth light-emitting unit, not only protecting the electrical connection wiring structure of the fourth light-emitting unit but also providing light refraction. Specifically, a transparent high refractive index benzene-based adhesive is prepared, and before formal dispensing, the surface of the reflective gel portion is cleaned using a plasma cleaning process, either by oxidation with hydrogen and inert argon gas or by physical impact, to strengthen the bonding force between the transparent gel and the reflective gel portion. The transparent gel is applied by dispensing to the surface directly above the fourth light-emitting unit, and a concave surface is formed on the side of the transparent gel opposite the fourth light-emitting unit. According to a conventional pattern design scheme, the required concave shape can be formed by dispensing, and the desired light emission angle can be formed by combining high-reflectivity surfaces of the reflective gel portion at different angles. By combining different reflective surfaces with different concave shapes, various desired optical angles can be formed. The concave transparent gel is used to refract and focus light, concentrate edge rays, and increase axial light emission intensity.

[0163] In some examples, injecting a transparent gel into a confined region includes, after providing the fourth light-emitting unit but before injecting the reflective gel, injecting a reinforcing adhesive into the confined region to form a reinforcing adhesive layer on the side of the fourth light-emitting unit opposite the third substrate, and making the side of the reinforcing adhesive layer opposite the fourth light-emitting unit a convex curved surface; injecting a reflective gel into the confined region to form a reflective gel portion in the confined region, wherein the reflective gel portion is in contact with the side wall of the fourth light-emitting unit and avoids at least a portion of the fourth light-emitting unit opposite the third substrate, thereby defining a cavity region; and injecting a transparent adhesive into the cavity region to form a protective adhesive layer on top of the reinforcing adhesive layer.

[0164] Optionally, first, an adhesive is dispensed onto the fourth light-emitting unit to form a reinforcing adhesive layer. The reinforcing adhesive layer maintains an arcuate surface without the adhesive overflowing. After the adhesive is briefly baked to cure, the prepared reflective gel is applied to the enclosed area between the fourth light-emitting unit and the reflective adhesive enclosure using a piezoelectric valve pulse injection method to form a reflective gel section. The reflective gel section is higher than the fourth light-emitting unit, intersects with the arcuate surface of the reinforcing adhesive layer, and hardens upon brief baking. Next, a high refractive index transparent adhesive is dispensed onto the reinforcing adhesive layer and finally baked to cure. The arcuate surface on top of the reinforcing adhesive layer supports the radiating surface, preventing the reflective gel section from blocking the light waves from the front of the fourth light-emitting unit. The reflective gel section covers the sides of the fourth light-emitting unit, forming an angle with the surface of the fourth light-emitting unit, and creating a light-emitting structure of a certain shape around the smooth arcuate surface, thereby satisfying the narrow-angle requirement.

[0165] This embodiment also provides an LED assembly including a circuit board on which the above-mentioned LED device is provided. In addition to the application fields of the LED assembly of Embodiment 1 described above, its application fields are also applicable to various optical signal fields, and various tests and controls can be performed based on visible light signals and invisible light signals emitted from the LED assembly, but these will not be explained in detail here.

[0166] It should be understood that all of the above embodiments of the present invention may be implemented independently, or in combination with some of the embodiments or some of the technical features of each embodiment. The scope of application of the present invention is not limited to the above examples, and those skilled in the art can make improvements and modifications based on the above description. All such improvements and modifications shall be within the scope of protection of the claims attached to the present invention.

Claims

1. An LED device comprising: a light-emitting unit; and a package layer provided on the light-emitting unit so as to cover the light-emitting unit, through which light emitted from the light-emitting unit is transmitted and radiated.

2. The LED device is a low-blue light full-spectrum LED device, and the light-emitting unit includes a first light-emitting unit, the first light-emitting unit includes at least three sets of blue light LED chip units having a blue light peak wavelength of 415 nm to 470 nm, the at least three sets of blue light LED chip units are electrically connected, and the blue light peak wavelengths of the at least three sets of blue light LED chip units increase sequentially. The LED device according to claim 1, wherein the package layer includes a first fluorescent colloid covering at least three sets of the blue light LED chip units, the first fluorescent colloid includes a first colloid and a first full-spectrum fluorescent powder mixed with the first colloid, and the first full-spectrum fluorescent powder includes a first cyan powder, a first green powder, a first yellow powder, and a first red powder.

3. The first light-emitting unit includes an electrically connected first blue light LED chip unit, a second blue light LED chip unit, and a third blue light LED chip unit, wherein the blue light peak wavelength of the first blue light LED chip unit is 430 nm to 440 nm, the blue light peak wavelength of the second blue light LED chip unit is 445 nm to 455 nm, and the blue light peak wavelength of the third blue light LED chip unit is 455 nm to 465 nm. and / or, the light radiant flux of the first blue light LED chip unit is 80% to 120% of the light radiant flux of the second blue light LED chip unit, and the light radiant flux of the third blue light LED chip unit is 60% to 100% of the light radiant flux of the second blue light LED chip unit. and / or, the half-wavelength width of the second blue light LED chip unit and the third blue light LED chip unit is 10 nm to 20 nm, and the half-wavelength width of the first blue light LED chip unit is 15 nm to 25 nm. and / or, the first light-emitting unit includes electrically connected fourth blue light LED chip unit, fifth blue light LED chip unit, sixth blue light LED chip unit, and seventh blue light LED chip unit, wherein the blue light peak wavelength of the fourth blue light LED chip unit is 415 nm to 425 nm, the blue light peak wavelength of the fifth blue light LED chip unit is 430 nm to 440 nm, the blue light peak wavelength of the sixth blue light LED chip unit is 445 nm to 455 nm, and the blue light peak wavelength of the seventh blue light LED chip unit is 460 nm to 470 nm. and / or, the light radiant flux of the fourth blue light LED chip unit and the sixth blue light LED chip unit is 80% to 120% of the light radiant flux of the fifth blue light LED chip unit, and the light radiant flux of the seventh blue light LED chip unit is 60% to 100% of the light radiant flux of the fifth blue light LED chip unit. and / or, the half-wavelength width of the fifth blue light LED chip unit, the sixth blue light LED chip unit, and the seventh blue light LED chip unit is 10 nm to 20 nm, and the half-wavelength width of the fourth blue light LED chip unit is 15 nm to 25 nm. and / or, the first cyan powder has an emission peak wavelength of 490 nm to 510 nm under blue light excitation, the first green powder has an emission peak wavelength of 520 nm to 540 nm under blue light excitation, the first yellow powder has an emission peak wavelength of 570 nm to 590 nm under blue light excitation, and the first red powder has an emission peak wavelength of 650 nm to 660 nm under blue light excitation. and / or, the first cyan powder has a half-wavelength width of 30 nm to 40 nm under blue light excitation, the first green powder has a half-wavelength width of 95 nm to 115 nm under blue light excitation, the first yellow powder has a half-wavelength width of 40 nm to 70 nm under blue light excitation, and the first red powder has a half-wavelength width of 80 nm to 100 nm under blue light excitation. and / or, the LED device further includes a first LED bracket, the first LED bracket includes a first bowl cup, each of the blue light LED chip units is provided in the first bowl cup, the first fluorescent colloid is filled in the first bowl cup, and when the color temperature of the LED device is 1700K, 2700K, or 3000K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:1 to 2:1; when the color temperature of the LED device is 4000K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:2 to 1:1; when the color temperature of the LED device is 5000K, 5700K, or 6500K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:3 to 1:1; and when the color temperature of the LED device is 13000K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:5 to 1:

2. and / or, the LED device further includes a first substrate, each of the blue light LED chip units is provided on the same surface of the first substrate, and the first fluorescent colloid is provided on the first substrate so as to cover each of the blue light LED chip units, and when the color temperature of the LED device is 1700K, 2700K, or 3000K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:2 to 1:1, when the color temperature of the LED device is 4000K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:3 to 1:1, when the color temperature of the LED device is 5000K, 5700K, or 6500K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:4 to 1:1, and when the color temperature of the LED device is 13000K, the mass ratio of the first full-spectrum fluorescent powder to the first colloid is 1:5 to 1:

2. and / or, when the color temperature of the LED device is 1700K, the proportion of the first cyan powder is 0% to 5%, the proportion of the first green powder is 75% to 85%, the proportion of the first yellow powder is 0% to 5%, and the proportion of the first red powder is 10% to 20%; when the color temperature of the LED device is 2700K, the proportion of the first cyan powder is 0% to 10%, the proportion of the first green powder is 75% to 90%, and the proportion of the first yellow powder is The proportion of the first red powder is 0% to 5%, and when the color temperature of the LED device is 3000K, the proportion of the first cyan powder is 0% to 10%, and when the color temperature of the LED device is 3000K, the proportion of the first green powder is 75% to 90%, and when the color temperature of the LED device is 3000K, the proportion of the first yellow powder is 0% to 5%, and when the color temperature of the LED device is 3000K, the proportion of the first cyan powder is 0% to 10%, and when the color temperature of the LED device is 3000K, the proportion of the first green powder is 75% to 90%, and when the color temperature of the LED device is 3000K, the proportion of the first cyan powder is 0% to 10%, and when the color temperature of the first green powder is 3000K, the proportion of the first yellow powder is 0% to 5%, and when the color temperature of the LED device is 3000K, the proportion of the first cyan powder is 0% to 10%, and when the color temperature of the first green powder cyan powder is 0% to 10%, and when the color temperature of the first green powder is 3000K, the proportion of the first cyan powder is 0% to 10%, and when the color temperature of the first green powder is 3000K, the proportion The first yellow powder is 75% to 95%, the first red powder is 0% to 5%, and the color temperature of the LED device is 5000K, the first cyan powder is 5% to 15%, the first green powder is 75% to 85%, the first yellow powder is 0% to 5%, and the first red powder is 5% to 15%, and the color temperature of the LED device is 5700K or 13000K, the The proportion of the first cyan powder is 5% to 15%, the proportion of the first green powder is 80% to 90%, the proportion of the first yellow powder is 0% to 5%, and the proportion of the first red powder is 5% to 15%. When the color temperature of the LED device is 6500K, the proportion of the first cyan powder is 10% to 20%, the proportion of the first green powder is 70% to 80%, the proportion of the first yellow powder is 0% to 5%, and the proportion of the first red powder is 5% to 15%. and / or, each of the blue light LED chip units is a single blue light wafer, The LED device according to claim 2, characterized in that the first full-spectrum fluorescent powder is composed of the first cyan powder, the first green powder, the first yellow powder, and the first red powder.

4. The LED device is a full-spectrum LED device, and the light-emitting unit includes a second light-emitting unit, the second light-emitting unit includes a blue light LED chip unit having a peak wavelength range of 432 nm to 463 nm, and a second fluorescent colloid that packages the blue light LED chip unit inside, the second fluorescent colloid includes a second colloid and a second full-spectrum fluorescent powder mixed with the second colloid, The blue light LED chip unit is composed of an electrically connected eighth blue light LED chip unit and a ninth blue light LED chip unit, and the peak wavelength of the eighth blue light LED chip unit is smaller than the peak wavelength of the ninth blue light LED chip unit. The LED device according to claim 1, characterized in that the light radiant flux of the ninth blue light LED chip unit is 60% to 100% of the light radiant flux of the eighth blue light LED chip unit.

5. The peak wavelength range of the eighth blue light LED chip unit is 432 nm to 442 nm, and the peak wavelength range of the ninth blue light LED chip unit is 453 nm to 463 nm. and / or, the peak wavelength range of the eighth blue light LED chip unit is 432 nm to 437 nm, and the peak wavelength range of the ninth blue light LED chip unit is 458 nm to 463 nm. and / or, the second full-spectrum fluorescent powder comprises a second cyan powder, a second green powder, a second yellow powder, and a second red powder, wherein the second cyan powder has an emission peak wavelength range of 490 nm to 510 nm under blue light excitation, the second green powder has an emission peak wavelength range of 520 nm to 540 nm under blue light excitation, the second yellow powder has an emission peak wavelength range of 570 nm to 590 nm under blue light excitation, and the second red powder has an emission peak wavelength range of 650 nm to 660 nm under blue light excitation. and / or, the second full-spectrum fluorescent powder is composed of a second cyan powder, a second green powder, a second yellow powder, and a second red powder. and / or, the second cyan powder has a half-wavelength width of 30 nm to 40 nm under blue light excitation, the second green powder has a half-wavelength width of 95 nm to 115 nm under blue light excitation, the second yellow powder has a half-wavelength width of 40 nm to 70 nm under blue light excitation, and the second red powder has a half-wavelength width of 80 nm to 100 nm under blue light excitation. and / or, the LED device further includes a second LED bracket, the second LED bracket includes a second bowl cup, the blue light LED chip unit is provided in the second bowl cup, the second fluorescent colloid is filled in the second bowl cup, and when the color temperature of the LED device is 2700K or 3000K, the mass ratio of the second full-spectrum fluorescent powder to the second colloid is 1:1 to 2:1; when the color temperature of the LED device is 4000K, the mass ratio of the second full-spectrum fluorescent powder to the second colloid is 1:2 to 1:1; and when the color temperature of the LED device is 5000K, 5700K or 6500K, the mass ratio of the second full-spectrum fluorescent powder to the second colloid is 1:3 to 1:

1. and / or, the LED device further includes a second substrate, the blue light LED chip unit is provided on one surface of the second substrate, the second fluorescent colloid is provided on the second substrate so as to cover the blue light LED chip unit, and when the color temperature of the LED device is 2700K or 3000K, the mass ratio of the second full-spectrum fluorescent powder to the second colloid is 1:2 to 1:1, when the color temperature of the LED device is 4000K, the mass ratio of the second full-spectrum fluorescent powder to the second colloid is 1:3 to 1:1, and when the color temperature of the LED device is 5000K, 5700K or 6500K, the mass ratio of the second full-spectrum fluorescent powder to the second colloid is 1:4 to 1:

1. and / or, when the color temperature of the LED device is 2700K, the proportion of the second cyan powder is 0% to 10%, the proportion of the second green powder is 75% to 90%, the proportion of the second yellow powder is 0% to 5%, and the proportion of the second red powder is 5% to 15%; when the color temperature of the LED device is 3000K, the proportion of the second cyan powder is 0% to 10%, the proportion of the second green powder is 75% to 90%, the proportion of the second yellow powder is 0% to 5%, and the proportion of the second red powder is 10% to 20%; when the color temperature of the LED device is 4000K, the proportion of the second cyan powder is 0% to 10%, the proportion of the second green powder is 75% to 95%, the proportion of the second yellow powder is 0% to 5%, and the proportion of the second red powder is 5% to 15% When the color temperature of the LED device is 5000K, the proportion of the second cyan powder is 5% to 15%, the proportion of the second green powder is 75% to 85%, the proportion of the second yellow powder is 0% to 5%, and the proportion of the second red powder is 5% to 15%. When the color temperature of the LED device is 5700K, the proportion of the second cyan powder is 5% to 15%, the proportion of the second green powder is 80% to 90%, the proportion of the second yellow powder is 0% to 5%, and the proportion of the second red powder is 5% to 15%. When the color temperature of the LED device is 6500K, the proportion of the second cyan powder is 10% to 20%, the proportion of the second green powder is 70% to 80%, the proportion of the second yellow powder is 0% to 5%, and the proportion of the second red powder is 5% to 15%. and / or, the half-wavelength range of the eighth blue light LED chip unit is 15 nm to 25 nm, and the half-wavelength range of the ninth blue light LED chip unit is 10 nm to 20 nm. The LED device according to claim 4, characterized in that both the eighth blue light LED chip unit and the ninth blue light LED chip unit are blue light LED chips.

6. The LED device according to claim 1, further comprising a third LED bracket, the light-emitting unit comprising a third light-emitting unit comprising an LED chip, the third LED bracket having a chip mounting area inside, the LED device further comprising a bonding layer provided within the chip mounting area, the LED chip provided on the bonding layer, the package layer comprising a resin protective layer and a packaging adhesive layer, the resin protective layer covering the bonding layer, and the packaging adhesive layer covering the LED chip and the resin protective layer, wherein the oxygen and moisture permeability of the resin protective layer is lower than that of the packaging adhesive layer.

7. The aforementioned resin protective layer also covers the front and surrounding area of ​​the LED chip. and / or, the outer shape of the bonding layer is circular, the bonding layer is connected to the side portion of the LED chip, and the bottom outer edge of the LED chip is located within the bonding layer. and / or, the thickness range of the resin protective layer is 10 μm to 60 μm. and / or, the resin protective layer is an epoxy resin layer and the packaging adhesive layer is a silica gel layer, or the resin protective layer is an epoxy resin layer and the packaging adhesive layer is a silicone resin layer, or the resin protective layer is a silicone resin layer and the packaging adhesive layer is a silica gel layer. and / or, the third LED bracket includes a base plate, an isolation portion, and a dam portion provided on the base plate and surrounding the LED chip, wherein the base plate has a functional area exposed to the dam portion, the isolation portion is partially exposed to the dam portion, and the functional area is divided into a first functional area and a second functional area, the area of ​​the first functional area is larger than the area of ​​the second functional area, and the LED chip is provided in the first functional area. and / or, the LED device according to claim 6, wherein the LED device includes a first bonding wire, one end of the first bonding wire is connected to the second functional area of ​​the base plate, and the other end of the first bonding wire is connected to the LED chip.

8. The LED device further includes a third substrate, the third substrate includes an electrical connector for connecting to a power supply. The light-emitting unit includes a fourth light-emitting unit that emits an optical signal, the fourth light-emitting unit is provided on the third substrate and is electrically connected to the electrical connector. The LED device further includes a reflective adhesive enclosure provided on the third substrate, the reflective adhesive enclosure is arranged to surround the fourth light-emitting unit and form an enclosed region. The LED device according to claim 1, wherein the package layer includes a reflective gel portion located within the region enclosed by the reflective adhesive enclosure, the reflective gel portion contacts the side wall of the fourth light-emitting unit, avoiding at least a portion of the fourth light-emitting unit opposite to the third substrate, thereby defining a cavity region with the reflective gel portion, and the cross-sectional area of ​​the cavity region increases in the direction opposite to the third substrate.

9. The viscosity of the reflective gel portion is greater than 10,000 mPa·s. and / or, the reflective gel portion includes a first adhesive layer and a second adhesive layer, wherein the first adhesive layer is located on the side of the fourth light-emitting unit and surrounds the fourth light-emitting unit, the second adhesive layer is provided on the first adhesive layer, the second adhesive layer defines the cavity region, and the viscosity of the second adhesive layer is higher than the viscosity of the first adhesive layer. and / or, the package layer further comprises a transparent gel covering the fourth light-emitting unit opposite to the third substrate, the transparent gel located within the cavity region, the side of the transparent gel opposite to the fourth light-emitting unit being concave, the transparent gel comprising a reinforcing adhesive layer and a protective adhesive layer, the reinforcing adhesive layer covering the fourth light-emitting unit opposite to the third substrate, the side of the reinforcing adhesive layer opposite to the fourth light-emitting unit being convex, the protective adhesive layer covering the surface of the reinforcing adhesive layer, the reinforcing adhesive layer located between the protective adhesive layer and the fourth light-emitting unit, and / or the fourth light-emitting unit includes a light-emitting chip that emits a visible light signal, or a radiation source that emits an invisible light signal, and / or, the light-emitting chip includes a base provided on the third substrate, a first distributed Bragg mirror provided on the base, a first gallium nitride layer provided on the first distributed Bragg mirror, a multiple quantum well layer provided on the first gallium nitride layer, a second gallium nitride layer provided on the multiple quantum well layer, and a second distributed Bragg mirror provided on the second gallium nitride layer. and / or, the light-emitting chip further comprises an oxide mirror layer, the oxide mirror layer is provided surrounding the multiple quantum well layer, and / or the light-emitting chip further includes an anti-reflective coating, the anti-reflective coating provided on the second distributed Bragg reflector, the second distributed Bragg reflector positioned between the second gallium nitride layer and the anti-reflective coating, and / or, the reflective gel portion is composed of high-reflectance particles and a high-refractive-index, high-thixotropic benzene-based adhesive. The LED device according to claim 8, characterized in that the high reflectivity particles consist of a mixture of titanium dioxide or zirconium dioxide particles with a content of more than 90% and hydrophobic silicon powder with a content of less than 3%.

10. An LED assembly comprising a circuit board and an LED device according to any one of claims 1 to 9 provided on the circuit board.

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