SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To perform batch type liquid processing while controlling atmosphere around a substrate.SOLUTION: A substrate processing apparatus includes: a processing container having a reservoir for reserving a processing liquid and a cover for closing an aperture of the upper section of the reservoir; a substrate holding section for holding a plurality of substrates in a vertical posture with intervals in a horizontal direction in the processing container; a first rotating shaft horizontally extended from the substrate holding section to the outside through a first sidewall of the processing container; a rotation driving section formed on the outside of the processing container to rotate the substrate holding section; and a processing fluid nozzle formed on the cover to supply processing fluid from a position higher than a liquid level of the processing liquid of the reservoir to the substrate held in the substrate holding section or space around the substrate. When the cover is located on a close position, an internal space closed in the processing container is formed. When the cover is located on an open position, a substrate can be carried into / from the substrate holding section. In a state that only the lower side section of each substrate held on the substrate holding section and rotated is dipped in the processing liquid reserved in the reservoir section, liquid processing is performed.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] In the manufacturing process of semiconductor devices, a batch-type liquid processing apparatus is known in which a plurality of substrates, such as wafers, are simultaneously immersed in a processing solution stored in a processing tank, thereby performing liquid processing on a plurality of substrates at the same time. In the batch-type liquid processing apparatus disclosed in Patent Document 1, a plurality of wafers are held in a carrier in a state of being arranged at equal intervals in a vertical position. The wafers held in the carrier are immersed in a processing tank in which a chemical solution is stored, and the carrier is rotated at a low speed around a horizontal axis. Next, the chemical solution is discharged from the processing tank, cleaning water is stored, the wafers held in the carrier are immersed in the cleaning water, and the carrier is rotated at a medium speed around the horizontal axis and swung up and down. After that, the cleaning water in the processing tank is discharged, and in this state, the carrier is rotated at a medium speed around the horizontal axis, whereby the cleaning water adhering to the wafers is shaken off and dried. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 62-283632 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that enables batch-type liquid processing while controlling the atmosphere surrounding a substrate. [Means for solving the problem]

[0005] One embodiment of a substrate processing apparatus includes a processing vessel having a storage portion for storing a processing liquid and a lid portion that engages with the storage portion to close an opening provided at an upper portion of the storage portion, a substrate holding portion that holds a plurality of substrates in a vertical position and spaced horizontally within the processing vessel, a first rotation shaft that penetrates a first side wall of the processing vessel and extends horizontally from the substrate holding portion to the outside of the processing vessel, a rotation drive portion that is provided outside the processing vessel and rotates the first rotation shaft to rotate the substrate holding portion about a horizontal axis, and a rotation drive portion that is provided on the lid portion of the processing vessel and supplies a processing fluid to the substrate held by the substrate holding portion or to a space around the substrate. and at least one processing fluid nozzle, the processing vessel being configured such that when the lid closes the opening of the storage portion, a sealed internal space is formed inside the processing vessel, the processing vessel being configured such that when the lid opens the opening of the storage portion, a substrate can be loaded and unloaded from the substrate holding portion, the processing vessel being configured such that when the lid opens the opening of the storage portion, a liquid processing is performed with only a lower portion of each of the plurality of substrates held by the substrate holding portion and rotated about a horizontal axis immersed in the processing liquid stored in the storage portion, and the at least one processing fluid nozzle supplies the processing fluid from a height position higher than the liquid level of the processing liquid stored in the storage portion. Effect of the Invention

[0006] According to the present disclosure, batch-type liquid processing can be performed while controlling the atmosphere around the substrate. [Brief description of the drawings]

[0007] [Figure 1] 2 is a vertical axial cross-sectional side view illustrating a schematic configuration of a liquid processing unit according to an embodiment of the substrate processing apparatus; FIG. [Diagram 2] 2 is a schematic diagram showing a state in which a lid part is separated from a storage part of the liquid processing unit of FIG. 1.

[0023] FIG. [Diagram 3] FIG. 2 is a perspective view showing an example of a configuration of a rotor. [Figure 4] 4 is a side view of the rotor shown in FIG. 3 as viewed from the axial direction. [Diagram 5] 4 is a schematic cross-sectional view showing an example of the configuration of a processing fluid nozzle provided in a lid portion of a liquid processing unit. FIG. [Figure 6] 13 is an axial longitudinal sectional side view illustrating a schematic configuration of a liquid processing unit according to another embodiment. FIG. [Figure 7] 1 is a diagram showing an example of a piping system in an embodiment in which a plurality of types of treatment liquids are supplied to a liquid treatment unit; [Figure 8A] 1 is a schematic plan view showing a unit arrangement (first configuration example) of an embodiment of a substrate processing system including a plurality of liquid processing units. [Figure 8B] 8B is a schematic side view showing the arrangement of units in the substrate processing system shown in FIG. 8A, as viewed in the direction of arrow VIIIB in FIG. 8A. [Figure 8C] 8B is a schematic rear view showing the unit arrangement of the substrate processing system shown in FIG. 8A as viewed in the direction of arrow VIIIC in FIG. 8A. [Figure 9] 2 is a schematic side view showing the configuration of a pitch conversion unit. FIG. [Figure 10] 13A and 13B are diagrams for explaining a state in which a chuck of a pitch conversion unit holds a substrate. [Figure 11] 11 is a schematic side view showing a state in which the substrate transport robot delivers the substrate to the pitch conversion unit. FIG. [Figure 12] 13A and 13B are diagrams illustrating the procedure from when the pitch conversion unit receives a substrate from the substrate transport robot until when it delivers the substrate to the rotor. [Figure 13] 8B is a schematic plan view showing a second configuration example of a substrate processing system including a plurality of liquid processing units, as viewed from the same perspective as in FIG. 8A. [Figure 14] 8B is a schematic plan view showing a third configuration example of a substrate processing system including a plurality of liquid processing units, as viewed from the same perspective as in FIG. 8A. [Figure 15] FIG. 15 is a schematic rear view of the third configuration example shown in FIG. 14, seen from the same perspective as in FIG. 8C. [Figure 16] 8B is a schematic plan view showing a fourth configuration example of a substrate processing system including a plurality of liquid processing units, as viewed from the same perspective as in FIG. 8A. [Figure 17] 8B is a schematic plan view showing a fifth configuration example of a substrate processing system including a plurality of liquid processing units, as viewed from the same perspective as in FIG. 8A. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] An embodiment of a substrate processing apparatus will be described with reference to the accompanying drawings.

[0009] The substrate processing apparatus is configured as a batch-type liquid processing unit 10 that is incorporated in a substrate processing system 1, which will be described later.

[0010] As shown in FIGS. 1 and 2, liquid processing unit 10 has a processing vessel 12. Processing vessel 12 has a storage section 13 for storing a processing liquid, and a lid section 14. Storage section 13 has an upper opening 16. Lid section 14 can move between a closed position where lid section 14 engages with storage section 13 to close upper opening 16 (see FIG. 2) of storage section 13, and an open position where lid section 14 opens upper opening 16 of storage section 13. When lid section 14 is in the closed position, a substantially sealed internal space that is substantially isolated from the outside of processing vessel 12 is formed inside processing vessel 12.

[0011] The liquid processing unit 10 has a rotor 18 (substrate holding portion or substrate holder) that holds and rotates a plurality of substrates W (e.g., semiconductor wafers) in a processing vessel 12. In the schematic diagram of FIG. 1, the rotor 18 is depicted as holding five substrates W, but the rotor 18 can be configured to hold, for example, 25 substrates W. The rotor 18 is configured to hold the plurality of substrates W in a vertical position and at a first equal pitch (also referred to as pitch P1) in the horizontal direction. The pitch P1 can be, for example, about 5 mm.

[0012] The lid 14 can be moved between an open position and a closed position by a lid opening / closing mechanism 15, which is shown diagrammatically in Fig. 1. When the lid 14 is in the open position, a substrate holding structure that holds the substrate W (for example, a substrate holder serving as an end effector of a substrate transport robot, or a pitch conversion unit 771, which will be described later) can access the rotor 18 without being obstructed by the lid 14.

[0013] The lid opening / closing mechanism 15 can be configured as a lifting mechanism that lifts and lowers the lid 14 in the vertical direction. 13 After the lid portion 14 is moved upward so as to be vertically separated from the storage portion 12, 13 1) to a position moved in a horizontal direction (for example, a direction perpendicular to the plane of the drawing in FIG. 1).

[0014] A first rotating shaft 21 and a second rotating shaft 22 extend horizontally in opposite directions from both sides of the rotor 18. The first rotating shaft 21 and the second rotating shaft 22 extend to the outside of the processing vessel 12 through a first side wall 121 and a second side wall 122 of the processing vessel 12, respectively. Outside the processing vessel 12, the first rotating shaft 21 and the second rotating shaft 22 are each supported by a bearing 23.

[0015] A rotation drive unit 24 provided outside the processing vessel 12 rotates the first rotation shaft 21, causing the rotor 18 and the substrate W held thereon to rotate about a rotation axis extending horizontally (left-right direction in FIG. 1). This rotation axis passes through the center of the substrate W held by the rotor 18. The rotation drive unit 24 can be configured, for example, by a combination of an electric rotary motor and a suitable driving force transmission means (e.g., a belt / pulley), but is not limited to this.

[0016] In the illustrated embodiment, the processing vessel 12 is divided into two parts, upper and lower, by a horizontal plane including the rotation axes of the first rotating shaft 21 and the second rotating shaft 22. In other words, it can be said that the processing vessel 12 is composed of a lower half forming the storage portion 13 and an upper half forming the lid portion 14.

[0017] In the illustrated embodiment, the internal space of the processing vessel 12 is divided into three chambers, namely, a central processing chamber (main chamber) 110 and a first sub-chamber (sub-chamber) 111 and a second sub-chamber (sub-chamber) 112 on either side thereof, by a first partition wall 123 and a second partition wall 124. The processing chamber 110 houses a rotor 18.

[0018] A chemical nozzle 28 is provided at the bottom of the processing chamber 110 to supply a chemical liquid as a processing liquid to the processing chamber 110. The chemical nozzle 28 may be formed of one or more holes provided in the bottom wall of the storage part 13, or may be formed of a nozzle body having one or more outlets provided in the bottom wall of the storage part 13 or near the lower part of the side wall.

[0019] The first partition wall 123 and the second partition wall 124 are respectively formed with through holes (communicating passages) 125, 126 having an inner diameter larger than the outer diameter of the first rotating shaft 21 and the second rotating shaft 22. When the liquid level of the liquid (e.g., the chemical liquid supplied from the chemical liquid nozzle 28) stored in the processing chamber 110 exceeds the height of the lower ends of the through holes 125, 126, the liquid flows (overflows) through the through holes 125, 126 into the first sub-chamber 111 and the second sub-chamber 112.

[0020] The bottom walls of the first sub-chamber 111 and the second sub-chamber 112 are provided with circulation drain ports 131, 132 and waste drain ports 133, 134 for discharging the liquid in the first sub-chamber 111 and the second sub-chamber 112. The bottom wall of the processing chamber 110 is also provided with a waste drain port 135 for discharging the liquid in the processing chamber 110. The waste drain ports 133, 134, 135 are connected to a drain line 136 having an opening / closing valve V4 interposed therein. The drain line 136 is connected to a liquid waste duct (DR) provided in a semiconductor device manufacturing factory. The term "for waste" in the waste drain port is used to distinguish it from "for circulation", and the liquid discharged from the waste drain ports 133, 134, 135 to the drain line 136 may be collected in a collection tank (not shown) and reused.

[0021] A chemical circulation mechanism (chemical supply mechanism) 50 is connected to the processing vessel 12. The chemical circulation mechanism 50 has a tank 51 for storing the chemical, an upstream circulation line 52 that leaves the tank 51 and reaches the chemical nozzle 28, and a downstream circulation line 53 that leaves the circulation drainage ports 131, 132 and returns to the tank 51. A pump 54, a heater 55, and a filter 56 are interposed in the upstream circulation line 52 in this order from the upstream side. The processing vessel 12 and the chemical circulation mechanism 50 constitute a chemical circulation system, and the chemical circulates through this chemical circulation system. This circulation flow of the chemical continues throughout the time that the substrate W is processed in the processing chamber 110 using the chemical. In the following description, for the sake of simplicity, the circulation of the chemical through the chemical circulation system as described above will also be referred to as "normal circulation", and the path through which the chemical flows at this time will also be referred to as "normal circulation path".

[0022] The chemical liquid flowing out of tank 51 by driving pump 54 has its temperature adjusted by heater 55, passes through filter 56 where particles are removed, and then flows from chemical nozzle 28 into processing chamber 110, where it is used for chemical processing of substrate W. The chemical liquid flowing from processing chamber 110 through through holes 125, 126 into first sub-chamber 111 and second sub-chamber 112 flows out of first sub-chamber 111 and second sub-chamber 112 through circulation drain ports 131, 132, and is returned to tank 51 via downstream circulation line 53.

[0023] A bypass line 57 can be provided that directly connects the upstream circulation line 52 (at a position downstream of the filter 56 of the upstream circulation line 52) and the downstream circulation line 53. By opening the on-off valve V1 of the bypass line 57 and closing the on-off valve V2 of the upstream circulation line 52 and the on-off valve V4 of the downstream circulation line 53, it is possible to circulate and adjust the temperature of the chemical liquid without passing through the processing chamber 110, the first sub-chamber 111, and the second sub-chamber 112.

[0024] When the substrate W is not being processed using the chemical liquid in the processing chamber 110, the chemical liquid processing step can be started promptly and smoothly by circulating the chemical liquid and adjusting the temperature via the bypass line 57 as described above. Note that, in the following description, for the sake of simplicity, the circulation of the chemical liquid through the bypass line 57 as described above will also be referred to as "standby circulation", and the path through which the chemical liquid flows at this time will also be referred to as the "standby circulation path".

[0025] A labyrinth seal 25 is provided at a portion where the first rotating shaft 21 penetrates the first side wall 121 and at a portion where the second rotating shaft 22 penetrates the second side wall 122. The labyrinth seal 25 can be composed of a plurality of annular protrusions provided on the outer circumferential surfaces of the first rotating shaft 21 and the second rotating shaft 22, and a plurality of annular grooves provided on the inner circumferential surfaces of the through holes of the first side wall 121 and the second rotating shaft 22 and receiving the protrusions.

[0026] As will be described later, the first sub-chamber 111 and the second sub-chamber 112 are kept in a reduced pressure atmosphere, and the liquid level in the first sub-chamber 111 and the second sub-chamber 112 does not normally reach the labyrinth seal 25, so that the labyrinth seal 25 can provide sufficient sealing performance.

[0027] The structure of the rotor 18, which is shown only diagrammatically in Fig. 1, will now be briefly described with reference to Fig. 3 and Fig. 4. The rotor 18 is configured to be able to hold a plurality of substrates W, for example 25 substrates W, in a vertical position and at equal intervals (pitch P1) in the horizontal direction.

[0028] The rotor 18 has a pair of disks 181A (first side of the rotor 18) and 181B (second side of the rotor 18), one or more (e.g., three or four) fixed holding rods 182 extending horizontally between the disks 181A and 181B, and a pair of movable holding rods 183. A first rotating shaft 21 and a second rotating shaft 22 are fixed to the disks 181A and 181B. Each of the fixed holding rod 182 and the movable holding rod 183 is provided with substrate holding grooves (not shown) that are arranged at equal intervals in the horizontal direction at the above-mentioned pitch P1. The peripheral portion of the substrate W held by the rotor 18 is accommodated in each substrate holding groove.

[0029] The movable holding rod 183 is attached via a pivot arm 184 to a rotation shaft 185 rotatably provided on the disks 181A, 181B, and is capable of pivoting between a holding position for holding the substrate W and a release position for releasing the substrate W.

[0030] A weight 186 fixed to a rotating shaft 185 is provided on the outer surface side of the disk 181A. The weight 186 is provided so that when the rotor 18 is rotating, the centrifugal force acting on an assembly consisting of the movable holding rod 183, the pivot arm 184, the rotating shaft 185 and the weight 186 presses the movable holding rod 183 against the substrate W. However, in order to prevent damage to the substrate W during high speed rotation of the rotor 18 which generates a large centrifugal force, a fixed stopper 187 is provided on the disk 181A to limit the displacement of the movable holding rod 183.

[0031] In order to maintain the movable holding rod 183 in the holding position, a spring stopper 188 made of a leaf spring is attached to the outer surface of the disk 181A. An operating groove 189, such as that formed in the head of a flat head screw, is formed on the shaft end of the rotating shaft 185 or on the surface of the weight 186 corresponding to said shaft end.

[0032] Liquid processing unit 10 has an operation mechanism 19. Operation mechanism 19 has a pressing mechanism 191 having a push rod that presses spring stopper 188, and a rotating mechanism 192 that engages with groove 189 to rotate rotating shaft 185, thereby turning movable holding rod 183.

[0033] The push rod of the pressing mechanism 191 presses the spring stopper 188 against the disk 181A, thereby allowing the weight 186 to rotate without being hindered by the spring stopper 188. In this state, the tip 192b of the rotating shaft 192a of the rotating mechanism 192 is engaged with the groove 189 to rotate the rotating shaft 185, thereby moving the movable holding rod 183 between the held position and the released position described above. The tip 192b has a shape similar to that of a driver bit for flat-head screws, for example.

[0034] By retracting the push rod of the pressing mechanism 191 with the movable holding rod 183 in the holding position, the spring stopper 188 returns to the initial position and prevents the movement of the weight 186. This maintains the movable holding rod 183 in the holding position.

[0035] When the lid 14 closes the upper opening 16 of the storage 13, the operation mechanism 19 is located at a retracted position outside the processing vessel 12 (for example, to the side of the second side wall 122). When the lid 14 opens the upper opening 16 of the storage 13 to load or unload the substrate W into or from the rotor 18, the operation mechanism 19 (the pressing mechanism 191 and the rotating mechanism 192) is moved to an operating position close to the disk 181A by the moving mechanism 193, and the pair of movable holding rods 183 can be moved to the release position by operating the spring stopper 188 and the rotating shaft 185 as described above. The distance between the pair of movable holding rods 183 in the release position is sufficiently large to allow the entry of multiple substrates W or a substrate holding structure (for example, a pitch conversion unit 771 described later) holding multiple substrates W into the rotor 18.

[0036] In the illustrated embodiment, the substrate holding structure is adapted to deliver 25 substrates W to the fixed holding rod 182 at a time. However, the substrate holding structure may deliver 25 substrates to the fixed holding rod 182 in multiple batches (e.g., 5 substrates at a time). When the substrate holding structure is withdrawn from the rotor 18 after a predetermined number (e.g., 25 substrates) of substrates W to be held by the rotor 18 have been delivered to the fixed holding rod 182, the movable holding rod 183 is moved to the holding position by the operation mechanism 19, whereby the substrates W are securely held by the rotor 18. After a predetermined number (e.g., 25 substrates) of substrates W have been delivered to the fixed holding rod 182 and the movable holding rod 183 holds the substrates W, the substrate holding structure may be withdrawn from the rotor 18.

[0037] The structure of the rotor 18 used in this embodiment (particularly the structure of the portion related to the operation of the movable retaining rod 183) itself is already publicly known through patent publications related to the applicant's prior applications (see, for example, JP 2006-13194 A, etc.), and for further details, please refer to these publications.

[0038] At least one processing fluid nozzle 30 for supplying a processing fluid is provided in the ceiling portion of the cover 14 corresponding to the processing chamber 110.

[0039] In one embodiment, the at least one processing fluid nozzle 30 may include a rinsing nozzle 31 that supplies a rinsing liquid toward the substrate W, a drying fluid nozzle 32 that ejects a drying fluid toward the substrate W, and a gas nozzle 33 that ejects an inert gas (e.g., nitrogen gas) or a low-oxygen gas (gas with a low oxygen content) toward the substrate W or toward the space around the substrate W. The number of processing fluid nozzles 30 may be determined according to the types of processing fluids supplied to the substrate W as described above. Multiple types of processing fluids (e.g., a rinsing liquid and nitrogen gas) may be supplied from the same processing fluid nozzle 30.

[0040] Examples of the rinse liquid include pure water (DIW) and functional water (for example, pure water in which a small amount of an electrolyte component is dissolved to give the rinse liquid electrical conductivity).

[0041] The drying fluid is for preventing the pattern from collapsing due to surface tension when drying the substrate W. An example of the drying fluid is an organic solvent having a lower surface tension and higher volatility than the rinse liquid, such as IPA (isopropyl alcohol). By replacing the rinse liquid, such as DIW, in the recesses of the pattern with IPA and then drying, the collapse of the pattern can be prevented or at least significantly suppressed. The drying fluid may be a mixture of the organic solvent described above and a hydrophobizing agent. As the hydrophobizing agent, a silylating agent or a silane coupling agent, specifically, trimethoxyphenylsilane, tetraethoxysilane, 3-glycidoxypropyltrimethoxysilane, TMSDMA (trimethylsilyldimethylamine), DMSDMA (dimethylsilyldimethylamine), TMSDEA (trimethylsilyldiethylamine), HMDS (hexamethyldiphenylsilane), TMDS (1,1,3,3-tetramethyldisilazane), etc. can be used. By making the surface of the pattern recesses hydrophobic with a hydrophobizing agent, the force that causes the pattern to collapse due to surface tension is reduced, so that the collapse of the pattern can be further suppressed. This technology of modifying the surface (hydrophobizing) and drying it is also called SMD (Surface Modification Dry). The drying fluid can be supplied in the form of mist (liquid) or vapor.

[0042] 5, the processing fluid nozzle 30 may be a rod-shaped nozzle extending along the arrangement direction (horizontal direction) of the substrates W directly or nearly directly above the row of substrates W held by the rotor 18. The rod-shaped nozzle may be constructed, for example, by forming a plurality of discharge ports 35 in a hollow cylinder 34 having a fluid passage therein extending horizontally. Such a rod-shaped nozzle may have the same number of discharge ports 35 as the number of substrates W held by the rotor 18, and preferably one more than that.

[0043] As described above, the processing fluid nozzle 30 is preferably provided directly or almost directly above the row of substrates W held by the rotor 18, but may be provided at any position higher than the liquid level of the processing liquid (chemical liquid) in the processing chamber 110.

[0044] 5, the discharge ports 35 can be provided at the same pitch as the arrangement pitch (horizontal spacing) of the substrates W held by the rotor 18. The discharge ports 35 thus provided can be provided at positions (excluding the discharge ports at both ends) facing the spaces between adjacent substrates W held by the rotor 18. It is preferable that the processing fluid is discharged from each discharge port 35 under the same conditions (discharge flow rate, discharge angle).

[0045] Each outlet 35 can be formed to discharge the processing fluid in a fan or cone shape (i.e., diverging). This allows the processing fluid to be evenly supplied to the surface of the substrate W held and rotated by the rotor 18. When the processing fluid nozzle 30 is a rinse nozzle 31, it is preferable that the rinse liquid be discharged in a fan shape from each outlet 35. When the processing fluid nozzle 30 is a gas nozzle 33, it is preferable that the rinse liquid be discharged in a cone shape from each outlet 35.

[0046] In this specification, unless otherwise specified, the "surface of the substrate W" refers to both the front surface on which devices are formed and the back surface on which devices are not formed.

[0047] A treatment fluid is supplied to each treatment fluid nozzle 30 via a treatment fluid supply mechanism. As is widely known in the art, the treatment fluid supply mechanism can be composed of a treatment fluid supply source such as a tank or a factory utility, a supply line that supplies the treatment fluid from the treatment fluid supply source to the treatment fluid nozzle 30, and flow rate adjustment devices such as a flow meter, an on-off valve, and a flow control valve, as well as auxiliary devices such as a filter and a heater, which are provided on the supply line.

[0048] In the illustrated embodiment, a rinsing liquid supply mechanism 31S that supplies a rinsing liquid to the rinsing nozzle 31, a drying fluid supply mechanism 32S that supplies a drying fluid to the drying fluid nozzle 32, and a gas supply mechanism 33S that supplies a gas (inert gas or low-oxygen gas) to the gas nozzle 33 are provided.

[0049] A suction device ("Vacuum" in FIG. 1) may be connected to the processing fluid nozzle 30. In a drying process described later, immediately after a drying fluid (e.g., IPA) is supplied to the substrate W, the inside of the processing chamber 110 is suctioned and depressurized through the processing fluid nozzle 30, thereby facilitating the penetration of the drying fluid into the pattern formed on the surface of the substrate W.

[0050] Since the rinse liquid can also be used to clean the processing chamber 110, it is also preferable that the rinse nozzle 31 is configured to be able to discharge the rinse liquid so that the rinse liquid hits not only the substrate W held by the rotor 18 but also the inner wall surface of the processing vessel 12 facing the processing chamber 110, the disks 181A and 181B of the rotor 18, and the surfaces of the first rotating shaft 21 and the second rotating shaft 22. However, as long as the rinse liquid scattered from the rotating rotor 18 (or the substrate W held by the rotor 18) hits the disks 181A and 181B of the rotor 18, and the surfaces of the first rotating shaft 21 and the second rotating shaft 22, etc., the rinse nozzle 31 may be configured to discharge the rinse liquid only toward the substrate W held by the rotor 18.

[0051] Exhaust ports 141, 142 for discharging the atmosphere (gas) in the first subchamber 111 and the second subchamber 112 are provided in the ceilings of the first subchamber 111 and the second subchamber 112, respectively. Exhaust ports 141, 142 are each connected to an exhaust line 143. The exhaust line 143 is connected to a gas-liquid separator (also called an exhaust box, etc.) (not shown) that separates liquid (mist) contained in the exhaust air. The liquid separated by the gas-liquid separator is connected to a drainage pipe (not shown in FIG. 1) of the semiconductor manufacturing factory, and the gas is connected to an exhaust duct (not shown in FIG. 1) of the semiconductor manufacturing factory.

[0052] The inside of the exhaust duct is a reduced pressure atmosphere, and as a result, the first sub-chamber 111 and the second sub-chamber 112 are sucked (reduced in pressure). The exhaust line 143 may be provided with a suction device such as an ejector or a vacuum pump to promote exhaust. In order to adjust the suction force acting on the first sub-chamber 111 and the second sub-chamber 112, the exhaust line 143 may be provided with a flow rate adjustment valve such as a butterfly valve.

[0053] Ventilation paths (communication paths) 127, 128 are provided on the upper portions of the first partition wall 123 and the second partition wall 124. Since the first subchamber 111 and the second subchamber 112 are suctioned as described above, the atmosphere in the processing chamber 110 flows through the ventilation paths 127, 128 to the first subchamber 111 and the second subchamber 112, and is exhausted through the exhaust ports 141, 142 and the exhaust line 143. Therefore, the pressure in the processing chamber 110 is higher than the pressure in the first subchamber 111 and the second subchamber 112.

[0054] To prevent liquid from accumulating in the ventilation paths 127, 128, the ventilation paths 127, 128 are formed in a mountain shape with a high center.

[0055] The cleaning liquid nozzles 37, 38 are provided on the ceilings of the first sub-chamber 111 and the second sub-chamber 112 to supply a cleaning liquid to clean the first sub-chamber 111 and the second sub-chamber 112. The cleaning liquid nozzles 37, 38 are supplied with a cleaning liquid from a cleaning liquid supply source through a supply line in which a flow rate regulator or the like is provided. A rinsing liquid supply mechanism 31S that supplies a rinsing liquid to the rinse nozzle 31 may supply a rinsing liquid (e.g., DIW) to the cleaning liquid nozzles 37, 38. The cleaning liquid nozzles 37, 38 are preferably configured to spray the cleaning liquid so that all the wall surfaces facing the first sub-chamber 111 and the second sub-chamber 112 and the surfaces of the first rotating shaft 21 and the second rotating shaft 22 can be cleaned.

[0056] A heater 129 is provided in the processing vessel 12 to adjust the temperature of the processing liquid in the processing chamber (main chamber) 110 of the processing vessel 12. The heater 129 can be provided in a portion of the wall defining the processing chamber 110 that comes into contact with the processing liquid (specifically, for example, the bottom wall of the processing chamber 110 and the lower half of the first partition wall 123 and the second partition wall 124). The heater 129 may be embedded in the wall of the processing vessel 12, or may be attached to a surface of the wall of the processing vessel 12 that does not come into contact with the processing liquid.

[0057] Next, the operation of liquid processing unit 10 will be described.

[0058] [Board loading process] First, the cover 14 rises to the open position, and the movable holding rod 183 of the rotor 18 that is not holding the substrate W is positioned at the release position.

[0059] Next, a substrate holding structure such as a substrate holder serving as an end effector of a substrate transport robot or a pitch conversion unit 771 of a transfer mechanism 77 described later passes the substrates W to the rotor 18, and then the movable holding rod 183 of the rotor 18 moves to the holding position, and the substrates W are firmly held by the rotor 18. The substrate holding structure is retracted to a position away from the rotor 18.

[0060] The lid 14 then lowers and engages with the reservoir 13 , thereby forming a substantially sealed interior space within the treatment vessel 12 .

[0061] [Chemical treatment process] Next, nitrogen gas (inert gas) is supplied into the processing chamber 110 from the processing fluid nozzle 30 (gas nozzle 33). The atmospheres in the first sub-chamber 111 and the second sub-chamber 112 are sucked through the exhaust line 143, and since the first sub-chamber 111 and the second sub-chamber 112 are depressurized, the atmosphere in the processing chamber 110 (air atmosphere) flows out into the first sub-chamber 111 and the second sub-chamber 112 through the ventilation paths 127, 128. As a result, the atmosphere in the processing chamber 110 is replaced with a nitrogen gas atmosphere (non-oxidizing atmosphere).

[0062] Next, the rotor 18 is rotated at a relatively low speed (for example, about 10 to 200 rpm). At this point, the chemical solution is circulated in a temperature-controlled state through the tank 51, the upstream circulation line 52, the bypass line 57, and the downstream circulation line 53 (bypassing the processing chamber 110). In other words, the above-mentioned "standby circulation" is being performed here.

[0063] Next, the on-off valve V1 of the bypass line 57 is closed, and the on-off valves V2 and V3 provided in the upstream circulation line 52 and the downstream circulation line 53 are opened, so that the chemical liquid is supplied from the chemical liquid nozzle 28 to the processing chamber 110 without passing through the bypass line 57.

[0064] When the liquid level of the chemical in the processing chamber 110 reaches approximately the height position of the first and second rotating shafts 20, 22 (hereinafter also referred to as the "liquid level during chemical processing"), the chemical overflows into the first sub-chamber 111 and the second sub-chamber 112. The chemical that has flowed out into the first sub-chamber 111 and the second sub-chamber 112 is discharged into the downstream circulation line 53 via the circulation drainage ports 131, 132, returned to the tank 51, and is supplied again to the processing chamber 110 from the chemical nozzle 28 through the upstream circulation line 52. In this way, the chemical circulates while the liquid level of the chemical in the processing chamber 110 is maintained at the "liquid level during chemical processing". In order to prevent a drop in the temperature of the chemical in the processing chamber 110, the wall of the processing vessel 12 facing the processing chamber 110 is heated by the heater 129 to, for example, approximately the same temperature as the set temperature of the chemical. That is, the "normal circulation" described above is performed here.

[0065] At this time, the lower half (lower portion) of the substrate W held and rotated by the rotor 18 is immersed in the chemical liquid stored in the processing chamber 110. At this time, the upper half (upper portion) of the substrate W is not immersed in the chemical liquid stored in the processing chamber 110, but since the substrate W is rotating, the entire surface of the substrate W is constantly wetted with the chemical liquid, and therefore the entire surface of each substrate W is processed evenly. In addition, since the chemical liquid is agitated by the rotating rotor 18 and the substrate W, the composition of the chemical liquid in the processing chamber 110 is homogenized, and the in-plane and inter-plane uniformity of the processing of the substrate W is improved.

[0066] As described above, immersing only the lower half (lower portion) of the substrate W in the chemical solution is preferable in terms of reducing the rotational drive load of the rotor 18 and achieving a relatively high relative speed between the surface of the substrate W and the chemical solution, compared to immersing the entire substrate W. Furthermore, immersing only the lower half (lower portion) of the substrate W in the chemical solution is also advantageous in that the through holes 125, 126 for passing the first rotating shaft 21 and the second rotating shaft 22 can be used as communication paths, simplifying the structure compared to not doing so (see below).

[0067] However, the liquid level of the chemical liquid in the processing chamber 110 is not limited to the above-mentioned liquid level. If a lower liquid level is preferred, the through holes (communicating passages) may be provided at an appropriate position lower than the height of the through holes (communicating passages) 125, 126 of the first partition wall 123 and the second partition wall 124. If a higher liquid level is preferred, the inner diameter of the through holes 125, 126 may be reduced to limit the outflow of the chemical liquid through the through holes 125, 126, and the through holes (communicating passages) may be provided at an appropriate position lower than the height of the through holes (communicating passages) 125, 126 of the first partition wall 123 and the second partition wall 124. In this case, the lower part of the substrate W is immersed in the chemical liquid stored in the processing chamber 110, and the upper half (upper part) of the substrate W is processed without being immersed in the chemical liquid stored in the processing chamber 110.

[0068] It is preferable that the distance between the disk 181A and the substrate W closest to the disk 181A among the multiple substrates W held by the rotor 18 is equal to or approximately equal to the distance between adjacent substrates W. It is also preferable that the distance between the disk 181B and the substrate W closest to it is equal to or approximately equal to the distance between adjacent substrates W. By doing so, the flow conditions of the chemical solution near the surfaces of the substrates at both ends become approximately the same as those of the other substrates, thereby improving the inter-surface uniformity of the processing of the substrates W.

[0069] Since the inside of the processing chamber 110 is a nitrogen gas atmosphere, it is possible to prevent oxygen in the processing chamber 110 from dissolving in the chemical solution, which would adversely affect the processing results, and also to suppress deterioration of the chemical solution due to oxidation. In addition, it is possible to prevent the upper half of the substrate W from being oxidized.

[0070] For example, if the chemical processing is a process of etching Poly-Si with TMAH, and the substrate is held by a non-rotating substrate holder, and the atmosphere in the processing tank is air, oxygen in the air may dissolve in the TMAH, increasing the oxygen concentration in the TMAH near the liquid surface, which may impair the in-plane etching uniformity.

[0071] In this embodiment, the inside of the processing chamber 110 is substantially sealed. Nitrogen gas is supplied into the processing chamber 110, and the atmosphere in the processing chamber 110 is sucked through the ventilation paths 127 and 128, but the nitrogen gas supply flow rate and the suction flow rate of the processing chamber 110 are small enough to maintain the processing chamber 110 in a nitrogen gas atmosphere. Therefore, since the water vapor evaporated from the surface of the chemical in the processing chamber 110 cannot freely go outside the processing chamber 110, the change in the concentration of the chemical circulating in the chemical circulation system is suppressed to be low. Therefore, it is possible to suppress the fluctuation of the etching rate. This effect is remarkable compared to a batch type liquid processing unit using an atmospheric open type processing chamber (processing tank).

[0072] After a predetermined chemical processing time has elapsed, the processing chamber 110 transitions to a state in which there is substantially no chemical. Specifically, for example, the on-off valve V1 of the bypass line 57 is opened, the on-off valves V2 and V3 provided in the upstream circulation line 52 and the downstream circulation line 53 are closed, and the on-off valve V4 of the drain line 136 is opened. This stops the supply of chemical from the chemical nozzle 28 into the processing chamber 110, and also drains the chemical remaining in the processing chamber 110, the first sub-chamber 111, and the second sub-chamber 112. At this point, the processing chamber 110 transitions from "normal circulation" to "standby circulation."

[0073] When it is desired to reuse the chemical remaining in the processing chamber 110, the first sub-chamber 111, and the second sub-chamber 112, a recovery line (not shown) may be branched off from the drainage line 136, and a configuration may be adopted in which the chemical can be returned, for example, to the tank 51 of the chemical circulation mechanism 50 via this recovery line.

[0074] After almost all of the chemical liquid has been discharged from the processing chamber 110, or after the level of the chemical liquid in the processing chamber 110 becomes lower than the lowest part of the rotor 18, the rotor 18 is rotated at a medium speed, for example, of about 500 rpm or less, to shake off and remove the chemical liquid adhering to the substrate W. This shaking off of the chemical liquid may be omitted.

[0075] When substantially all of the chemical liquid remaining in the processing chamber 110, the first sub-chamber 111, and the second sub-chamber 112 has been discharged, the supply of nitrogen gas from the processing fluid nozzle 30 (gas nozzle 33) is stopped. Note that, since the purpose of stopping the supply of nitrogen gas is to reduce running costs, if it is important that the atmosphere around the substrate W is a low-oxygen atmosphere, the supply of nitrogen gas may be continued.

[0076] [Rinse process] Next, with the rotor 18 rotated at a relatively low speed, for example, about 10 to 200 rpm, a rinse liquid (for example, DIW) is discharged from the processing fluid nozzle 30 (rinse nozzle 31) provided in the processing chamber 110. Also, a rinse liquid is discharged as a cleaning liquid from the cleaning liquid nozzles 37, 38 in the first sub-chamber 111 and the second sub-chamber 112.

[0077] As a result, the chemical liquid remaining on the surface of the substrate W is washed away by the rinsing liquid. In addition, the surfaces of the components of the liquid processing unit 10 facing the internal space of the processing chamber 110 are also washed away by the rinsing liquid discharged from the rinsing nozzle 31 and the rinsing liquid scattered from the rotor 18 and the substrate W. The surfaces of the components of the liquid processing unit 10 facing the internal spaces of the first subchamber 111 and the second subchamber 112 are also washed away by the rinsing liquid. The rinsing liquid (cleaning liquid) in the processing chamber 110, the first subchamber 111, and the second subchamber 112 is discarded via the drainage line 136 with the on-off valve V4 opened.

[0078] Next, the supply of the rinsing liquid from the rinse nozzle 31 and the cleaning liquid nozzles 37, 38 is stopped, and the rotor 18 is rotated at a medium speed, for example, of about 500 rpm or less, thereby shaking off and removing the rinsing liquid adhering to the rotor 18 and the substrate W. While shaking off the rinsing liquid adhering to the substrate W, the cleaning liquid (rinsing liquid) may be continuously discharged from the cleaning liquid nozzles 37, 38. The shaking off may be omitted, and the process may proceed to the next step.

[0079] [Drying process (first process: pre-drying treatment)] Next, the rotation speed of the rotor 18 is set to a medium speed, for example, about 10 to 200 rpm. Nitrogen gas (inert gas) is supplied into the processing chamber 110 from the processing fluid nozzle 30 (gas nozzle 33). The first sub-chamber 111 and the second sub-chamber 112 are evacuated via the exhaust line 143, and the processing chamber 110 is evacuated via the ventilation paths 127 and 128, creating a nitrogen gas atmosphere inside the processing chamber 110.

[0080] Next, one of the following is discharged from the drying fluid nozzle 32: (1) IPA mist or IPA vapor (2) A mixture of IPA mist and SMD mist or SMD vapor As a result, in either case of (1) or (2) above, the rinse liquid (DIW) on the surface of the substrate W, particularly in the recesses of the pattern, is replaced with IPA. In the case of (2) above, the surface of the substrate W, particularly the surface of the recesses of the pattern, is further hydrophobized.

[0081] [Drying process (2nd process: Main drying process)] Next, while continuing to supply nitrogen gas from the processing fluid nozzle 30 (gas nozzle 33), the ejection of IPA (or IPA+SMD) from the drying fluid nozzle 32 is stopped, and (A) reduced pressure drying or (B) spin drying is performed as the main drying process.

[0082] (A) When performing reduced pressure drying, the pressure inside the processing chamber 110 is reduced to, for example, about -20 kPa in gauge pressure by adjusting (for example, increasing) the exhaust flow rate through the exhaust line 143. When the exhaust line 143 is provided with a suction device such as an ejector or a vacuum pump, the exhaust flow rate can be adjusted by adjusting the suction force of the suction device. When the exhaust line 143 is provided with a valve having a flow rate adjustment function such as a butterfly valve, the opening degree of the valve can be adjusted. By maintaining the reduced pressure inside the processing chamber 110 for about 5 minutes, the IPA evaporates and the entire surface of the substrate W including the recesses of the pattern is dried. (A) When performing reduced pressure drying, the rotation speed of the rotor 18 may be maintained the same as during the execution of the drying pre-processing, or the rotation may be stopped.

[0083] When (B) spin drying is performed, the rotation speed of the rotor 18 is increased to a relatively high speed of, for example, about 100 to 1000 rpm. By continuing this state for about 5 minutes, the IPA on the substrate W is shaken off and evaporated, and the entire surface of the substrate W including the inside of the recesses of the pattern is dried. (B) Spin drying may be performed in a state where the pressure inside the processing chamber 110 is reduced to about -20 kPa in gauge pressure. In other words, (A) reduced pressure drying and (B) spin drying may be performed simultaneously.

[0084] This completes the processing of one batch (for example, 25 substrates).

[0085] [Substrate unloading process] Next, the supply of nitrogen gas from the gas nozzle 33 is stopped. In order not to prevent the lid 14 from being separated from the storage 13, it is preferable that the internal pressure of the processing chamber 110, the first subchamber 111, and the second subchamber 112 be set to normal pressure, which is approximately the same as the pressure outside the processing vessel 12. For this reason, it is preferable to temporarily stop suction of the first subchamber 111 and the second subchamber 112 via the exhaust line 143. Next, the lid 14 is raised by the lid opening / closing mechanism 15, the movable holding rod 183 is moved to the release position, and the substrate W is removed from the rotor 18 by a substrate holding structure (not shown). The removed substrate W is accommodated, for example, in the original substrate transport container C.

[0086] According to the above embodiment, batch liquid processing is performed with the lower portions of the substrates W held and rotated by the rotor 18 immersed in the processing liquid (chemical liquid). This allows liquid processing with high in-plane uniformity and inter-plane uniformity to be performed.

[0087] Furthermore, according to the above embodiment, the inside of the processing chamber 110 is a substantially sealed space, which makes it easy to adjust the atmosphere in the internal space of the processing chamber 110. By filling the internal space of the processing chamber 110 (the space above the surface of the processing liquid) with an inert gas atmosphere such as nitrogen gas, it is possible to prevent an oxidizing atmosphere such as air from adversely affecting the surface of the substrate W or the processing liquid.

[0088] In the above embodiment, the first sub-chamber 111 and the second sub-chamber 112 provide various advantageous functions, but the first sub-chamber 111 and the second sub-chamber 112 may be omitted, and the processing vessel 12 may be configured to have only the processing chamber 110. In this case, for example, a circulation outlet for discharging the chemical solution from the processing chamber 110 to the downstream circulation line 53 may be provided at an appropriate height position of the first side wall 121 and / or the second side wall 122 of the processing vessel 12. In addition, exhaust ports (141, 142) may be provided in the ceiling of the processing chamber 110 to adjust the atmosphere inside the processing chamber 110.

[0089] Examples of liquid treatments and treatment conditions performed by liquid treatment unit 10 are given below.

[0090] <Example 1> Purpose of chemical treatment: Poly-Si etching of channels Chemical solution: Alkaline chemical solution such as TMAH, TM-Y (choline), SC1, etc. Chemical solution temperature: 60~80℃ Processing time: ~60min

[0091] <Example 2> Purpose of chemical treatment: W / TiN double etching (metal etching) Chemical solution: PAN (phosphoric acid + acetic acid + nitric acid) Chemical solution temperature: 60~80℃ Processing time: ~90min (Note: The chemical solution may be organic acids only (acetic acid, formic acid, oxalic acid, etc.).

[0092] <Example 3> Purpose of chemical processing: SiN etching (no dummy words) Chemical solution: phosphoric acid Chemical temperature: 150~165℃ Processing time: ~300min

[0093] [Modifications of the Processing Vessel] In the above embodiment, the chemical liquid is circulated through the processing chamber 110, the first sub-chamber 111, and the second sub-chamber 112 by using the chemical liquid circulation mechanism 50 during the chemical liquid processing, but the chemical liquid does not have to be circulated. That is, when the chemical liquid is supplied from the chemical liquid nozzle 28 to a predetermined liquid level in the processing chamber 110 at the start of the chemical liquid processing step, the supply of the chemical liquid from the chemical liquid nozzle 28 is substantially stopped until the chemical liquid processing step is completed (although some replenishment may be performed), and after the chemical liquid processing step is completed, the chemical liquid may be discharged from the processing chamber 110, and a rinsing step may be started. The chemical liquid discharged from the processing chamber 110 may be discarded, or may be collected and reused.

[0094] In this case, the processing vessel 12 can be modified as shown in Fig. 6. First, instead of providing the through holes 125, 126 having inner diameters larger than the outer diameters of the first rotating shaft 21 and the second rotating shaft 22 in the first partition wall 123 and the second partition wall 124, a labyrinth seal 25M similar to the labyrinth seal 25 provided in the rotating shaft through-holes of the first side wall 121 and the second side wall 122 is provided.

[0095] 6, no chemical circulation is performed via the processing chamber 110, the first sub-chamber 111, and the second sub-chamber 112. Therefore, instead of the above-mentioned chemical circulation mechanism (chemical supply mechanism) 50, a chemical supply mechanism 50M that supplies chemical to the chemical nozzle 28 is provided. Also, circulation drain ports 131, 132 are not provided. In other respects, the modified embodiment shown in FIG. 6 has substantially the same configuration as the embodiment shown in FIG.

[0096] In the modified embodiment of FIG. 6, unlike the above-described embodiment, only a small amount of liquid flows into the first subchamber 111 and the second subchamber 112 from the processing chamber 110. Specifically, a mist of liquid may flow from the processing chamber 110 into the first subchamber 111 and the second subchamber 112 via the ventilation paths 127, 128. When processing is performed with the liquid level in the processing chamber 110 set higher than the height positions of the first rotating shaft 21 and the second rotating shaft 22, for example, a small amount of liquid in the processing chamber 110 may leak into the first subchamber 111 and the second subchamber 112 at the labyrinth seal 25M. In this modified embodiment, the main role of the first subchamber 111 and the second subchamber 112 is to control the atmosphere and / or pressure of the processing chamber 110 via the ventilation paths 125, 126.

[0097] [Modification using multiple chemical solutions] In the above embodiment, one type of chemical solution is used, but the present invention is not limited to this, and liquid processing may be performed using two or more types of chemical solutions. In this case, after the first chemical processing step, the first rinsing step is performed, and then the second chemical processing step and the second rinsing step are performed (without moving to the drying step), and then the process moves to the drying step.

[0098] A liquid treatment unit 10 capable of performing liquid treatment using two types of chemical liquids, an acidic chemical liquid and an alkaline chemical liquid, will be described below with reference to Fig. 7. The differences between the configuration shown in Fig. 7 and the configuration shown in Fig. 1 will be briefly described below.

[0099] Two circulation mechanisms, an acidic chemical circulation mechanism 50A and an alkaline chemical circulation mechanism 50B, are provided. By appropriately switching the on-off valves provided in these circulation mechanisms 50A and 50B, one of the chemicals in the circulation mechanisms 50A and 50B can be circulated through the chemical nozzle 28, the processing chamber 110, the first sub-chamber 111, and the second sub-chamber 112 (corresponding to the above-mentioned "normal circulation"), and the other chemical in the circulation mechanisms 50A and 50B can be circulated through a bypass line (57A or 57B) (corresponding to the above-mentioned "standby circulation"). The components with "A" after the number "50+N" (N is a single-digit natural number) are components related to the acidic chemical circulation mechanism 50A, and the components with "B" after the number are components related to the alkaline chemical circulation mechanism 50B. A component having a reference number in the 50s with an alphabetical letter (A, B) at the end (e.g., 51A) is a component that performs the same function as a component having a reference number in the 50s without an alphabetical letter (A, B) (e.g., 51A) in FIG. 1.

[0100] The drainage line 136 can be selectively connected to a drainage pipeline in a semiconductor manufacturing factory, the downstream circulation line 53A of the acidic chemical circulation mechanism 50A, and the downstream circulation line 53B of the alkaline chemical circulation mechanism 50B. For this purpose, the drainage line 136 and the downstream circulation lines 53A and 53B are provided with on-off valves.

[0101] In detail, the downstream end of the drainage line 136 can be selectively connected to either an acidic drainage pipeline or an alkaline drainage pipeline in a semiconductor manufacturing factory via a drain box. The drainage line 136 is connected to a downstream circulation line 53A of the acidic chemical circulation mechanism 50A and a downstream circulation line 53B of the alkaline chemical circulation mechanism 50B on the upstream side of the drainage box. The drainage line 136 and the downstream circulation lines 53A and 53B are provided with on-off valves, and the drainage line 136 can be selectively connected to either the drainage pipeline in the semiconductor manufacturing factory, the downstream circulation line 53A, or the downstream circulation line 53B by appropriately switching these on-off valves.

[0102] Recovery lines 53A1 and 53B1 branch off from the downstream circulation line 53A and the downstream circulation line 53B, respectively, and an acid recovery tank 53A2 and an alkali recovery tank 53B2 are interposed in the recovery lines 53A1 and 53B1. The recovery line 53A1 (53B1) can be used to temporarily store the chemical discharged from the first sub-chamber 111 and the second sub-chamber 112 in the acid recovery tank 53A2 (alkali recovery tank 53B2) without discarding it when the chemical is not circulating in the acid chemical circulation mechanism 50A (alkaline chemical circulation mechanism 50B). The chemical stored in the acid recovery tank 53A2 (alkali recovery tank 53B2) can be returned to the tank 51A (51B) of the acid chemical circulation mechanism 50A (alkaline chemical circulation mechanism 50B) at an appropriate time.

[0103] An exhaust box 144 is provided in the exhaust line 143 to separate moisture (mist, etc.) contained in the exhaust from the exhaust (gas). Downstream of the exhaust box 144, the exhaust line 143 branches into a line for acid exhaust (connected to an acid exhaust duct (Ac-EXH) of the semiconductor manufacturing factory), a line for alkali exhaust (connected to an alkali exhaust duct (Al-EXH) of the semiconductor manufacturing factory), and a line for organic exhaust (connected to an organic exhaust duct (Or-EXH) of the semiconductor manufacturing factory). A drainage line 145 branching off from the exhaust line 143 at the exhaust box 144 branches into a line for acid drainage (connected to an acid drainage pipe (Ac-DR) of the semiconductor manufacturing factory), a line for alkali drainage (connected to an alkali drainage pipe (Al-DR) of the semiconductor manufacturing factory), and a line for organic drainage (connected to an organic drainage pipe (Or-DR) of the semiconductor manufacturing factory). By appropriately switching the on-off valves provided in each of the above-mentioned lines, the exhaust gas and waste liquid are discharged to a destination appropriate for the type of the exhaust gas and waste liquid.

[0104] Unlike the processing vessel 12 in Fig. 1, the bottom of the processing vessel 12 in Fig. 7 does not have drainage ports 131, 132 dedicated to circulation. The lid 14 and the various components provided in the lid 12 of the processing vessel 12 in Fig. 7 are the same as those provided in the lid shown in Fig. 1, and therefore repeated explanations will be omitted.

[0105] [Overall configuration of the substrate processing system] Next, a substrate processing system 70 incorporating a plurality of liquid processing units 10 will be described with reference to Figures 8A, 8B, and 8C. In order to facilitate understanding of the relationship between Figures 8A, 8B, and 8C, an XYZ Cartesian coordinate system is set and illustrated in each figure. The Z direction is the vertical direction, and the XY plane is the horizontal plane. Figure 8B is a rear view seen from the direction VIIIB in Figure 8A. Figure 8B is a side view seen from the direction VIIIC in Figure 8A.

[0106] The substrate processing system 70 includes a container transfer section (load port) 71, a container storage section 72, and a processing section 73.

[0107] The container loading / unloading section 71 is provided with a plurality of container mounting stages 711 capable of mounting a substrate transport container C, such as a FOUP, which accommodates a plurality of, for example, 25 substrates W. The container mounting stages 711 are aligned at equal intervals in the Y direction.

[0108] The container storage section 72 is provided with a plurality of container mounting tables 721. A partition 74 is provided between the container loading / unloading section 71 and the container storage section 72, and a partition 74 is also provided between the container storage section 72 and the processing section 73. A plurality of container mounting tables 721 are provided in multiple rows and multiple stages on each of the partitions 74, 75 facing the container storage section 72. Shutters (not shown) are provided on the partition 74 at positions corresponding to the respective container mounting tables 721, and the substrate transport container C placed on the container mounting table 721 can be carried into the container storage section 72 by opening the shutters.

[0109] In the container storage section 72, a container transport robot (container transport mechanism) 722 is provided which can access a substrate transport container C on any container mounting stage 721 in the container storage section 72. The container transport robot 722 may be configured to directly access a substrate transport container C mounted on the container mounting stage 711 of the container loading / unloading section 71. Alternatively, the container mounting stage 711 may be configured to move in the X direction to enter the container storage section 72. In this case, the container transport robot 722 can transfer the substrate transport container C to and from the container mounting stage 711 which has entered the container storage section 72.

[0110] Within processing section 73, there are provided one substrate transport robot 76 (substrate transport mechanism) and one or more (four in total in the example of FIGS. 8A to 8C) transfer mechanisms 77 having a pitch conversion function.

[0111] The substrate transport robot 76 can be configured as, for example, an articulated robot. At the tip of the arm of the substrate transport robot 76, a substrate holder 761 capable of holding a plurality of (for example, 25) substrates W collectively is provided as an end effector. Although detailed illustration is omitted, the substrate holder 761 can be configured, for example, of a plurality of (25) bifurcated substrate holding elements called forks. These substrate holding elements are arranged in a horizontal position, parallel to each other, and at equal intervals (pitch P2) in the vertical direction. Each substrate holding element may be configured as a vacuum chuck that vacuum-sucks the substrate W, or may be configured as, for example, a mechanical chuck that holds the substrate W by a plurality of gripping jaws. The substrate holder 761 as described above is well known in the art, and detailed description thereof will be omitted.

[0112] A shutter (not shown) and a lid opening / closing mechanism (not shown) are provided at a position corresponding to a certain one (or more than one) specific container mounting stage 721 provided on the partition wall 75 side. This specific container mounting stage will be referred to as the "container mounting stage 721S" to distinguish it from the others. When the lid of the substrate transport container C mounted on the specific container mounting stage 721S is removed by the lid opening / closing mechanism (not shown) and the shutter (not shown) is opened, the substrate holder 761 of the substrate transport robot 76 can collectively remove the substrates W from the substrate transport container C.

[0113] A plurality of substrates W are stored in the substrate transport container C in a horizontal position and lined up in the vertical direction at a second equal pitch (equal to the above-mentioned pitch P2). The substrate transport robot 76 can change the position of the plurality of substrates W taken out all at once from the substrate transport container C without changing the arrangement pitch, so that the substrates W are lined up in the horizontal direction in a vertical position and at the second equal pitch (i.e., at the same pitch P2). The substrate transport robot 76 can deliver the plurality of substrates W lined up in the horizontal direction in a vertical position and at the second equal pitch to the transfer mechanism 77.

[0114] The transfer mechanism 77 has a function of converting the arrangement pitch of the substrates W received from the substrate transport robot 731 into the above-mentioned pitch P1, which is a pitch suitable for holding by the rotor 18 of the liquid processing unit 10, and transferring the substrates W to the rotor 18. Generally, the pitch P1 is smaller than the pitch P2, but this is not limited to this.

[0115] 9, the transfer mechanism 77 has a pitch conversion unit 771. The pitch conversion unit 771 has a base member 771a, a plurality of (e.g., 25) chucks 771b slidably provided on the base member 771a, and a pitch change mechanism 771c that changes the distance between the chucks 771b. When the pitch change mechanism 771c performs pitch conversion, the central chuck 771b is usually stationary or nearly stationary, and the other chucks 771b move toward and away from the central chuck 771b, with the chucks farther from the central chuck 771b moving more. However, the manner in which the chucks 771b move is not limited to this.

[0116] Various types of pitch change mechanisms 771c, such as cam type, air cylinder type, lazy tongue (multiple parallel pantograph link) type, are already known and are commercially available under the names of pitch changer, pitch change mechanism, pitch change unit, etc. Most of the known pitch change mechanisms are configured to maintain a state in which multiple sliders are always arranged at equal intervals regardless of the pitch size. Below, the pitch change mechanism 771c will be briefly described, although not shown. The cam type pitch change mechanism is configured to change the interval (pitch) of multiple sliders engaged with the cam grooves of the cam shaft by rotating a cam shaft rotated by an electric motor. In this case, each chuck (771b) is fixed to each slider or formed integrally with each slider. The air cylinder type pitch change mechanism has multiple sliders that can move along a guide rail extending in the horizontal direction and a plate that moves up and down by an air cylinder. The plate has multiple guide grooves that become wider as they go downward, and a guide pin that is integral with each slider slidably engages with each guide groove. By moving the plate up and down with an air cylinder, the slider is displaced horizontally along the guide rail, thereby changing the slider pitch.

[0117] 9 and 10, each chuck 771b can be formed as a vacuum chuck that vacuum-sucks a part of the peripheral edge of the back surface (the surface on which no devices are formed) of the substrate W. In Fig. 10, an arc-shaped suction region is indicated by reference numeral 711d. A suction force can be supplied to each chuck 771b from a vacuum pump via, for example, a flexible tube.

[0118] 9 and 12, the transfer mechanism 77 has a moving mechanism 772 that moves the pitch conversion unit 771. As shown generally in FIGS. 8 and 9, the moving mechanism 772 has a horizontal guide rail 773 that functions as a Y-direction guide rail, a vertical guide rail 774 that is provided movably in the Y direction along the horizontal guide rail 773 and functions as a Z-direction guide rail, a Y-direction drive mechanism (not shown) that moves the vertical guide rail 774 along the Y-direction guide rail, a support base 776 that is provided movably in the Z direction along the vertical guide rail 774, and a Z-direction drive mechanism (not shown) that moves the support base 776 in the Z direction along the vertical guide rail 774.

[0119] The moving mechanism 772 can move the pitch conversion unit 771 between a first transfer position (position shown in FIG. 8A) which is a transfer position of the substrate W between the substrate transport robot 76 and the pitch conversion unit 771, and a second transfer position (position shown in FIG. 8E) which is a transfer position of the substrate W between the pitch conversion unit 771 and the rotor 18.

[0120] The transfer mechanism 77 has a posture changing mechanism 778 that changes the posture of the pitch conversion unit 771. The posture changing mechanism 778 is configured with a turning mechanism that connects a base member 771a of the pitch conversion unit 771 to a support stand 776 and turns the base member 771a around a Y-direction (horizontal) axis 775. The turning mechanism includes, for example, a stepping motor or a servo motor.

[0121] By operating the posture changing mechanism 778, the pitch conversion unit 771 can take a first posture and a second posture. In the first posture, the multiple substrates W held by the pitch conversion unit 771 are positioned above the pitch conversion unit 771. In the second posture, the multiple substrates W held by the pitch conversion unit 771 are positioned below the pitch conversion unit 771. In the second posture, the substrates W held by the pitch conversion unit 771 are in a state in which they are adsorbed and suspended by the chuck 771b.

[0122] The transfer mechanism 77 has a stopper 782 for preventing the substrate W from falling off the chuck 771b due to an unexpected accident when the pitch conversion unit 771 holds the substrate W in the second position. A rotating arm 784 that can be rotated around a rotation axis 785 by a driving means such as an electric rotating motor (not shown) is provided on a support member 783 fixed to a base member 771a of the pitch conversion unit 771. The stopper 782 is attached to the rotating arm 784 and can be rotated between a fall prevention position shown in FIG. 9 and a retracted position rotated, for example, 180 degrees from the fall prevention position shown in FIG. The stopper 782 in the fall prevention position is in contact with the substrate W held by the pitch conversion unit 771 or is near the periphery of the substrate W with a small gap therebetween. The retreat position may be another position (for example, a position rotated about 120 degrees from the fall prevention position) as long as it does not interfere with the transfer of the substrate W between the pitch conversion unit 771 and the substrate transport robot 731 described below, and between the pitch conversion unit 771 and the rotor 18.

[0123] Next, the operation of the transfer mechanism 77 will be described with reference to FIGS.

[0124] The substrate transport robot 76 simultaneously takes out a plurality of substrates W from the specific container mounting table 721S described above, changes the attitude of the substrates W from a horizontal attitude to a vertical attitude, and then positions the substrates W at the chuck 771b of the pitch conversion unit 771 located at the first transfer position. The pitch conversion unit 771 vacuum-sucks each substrate W by each chuck 771b. Then, the substrate transport robot 76 releases the substrates W. In the above process, since the substrate transport robot 76 does not have a pitch conversion function, the arrangement pitch of the substrates W remains at pitch P2. This state is shown generally in FIG. 11 and FIG. 12(A).

[0125] Next, as shown in FIG. 12(B), the pitch change mechanism 771c is operated to change the arrangement pitch of the substrates W from pitch P2 to pitch P1 (the substrate holding pitch of the rotor 18).

[0126] Next, stopper 782, not shown in Fig. 12, is placed in a fall prevention position, and the attitude of pitch conversion unit 771 is changed from the first attitude to the second attitude by operating attitude changing mechanism 778 of transfer mechanism 77, as shown in Fig. 12(C). In other words, substrate W is suspended by pitch conversion unit 771.

[0127] 12(D), the pitch conversion unit 771 and the substrate W held thereby are moved to a position directly above the storage section 13 of the liquid processing unit 10 (a position directly above the second transfer position). At this time, the lid section 14 of the liquid processing unit 10 has already been moved upward away from the storage section 13 to the open position, and is in a position not to impede the movement of the pitch conversion unit 771 and the substrate W. The attitude of the pitch conversion unit 771 may be changed from the first attitude to the second attitude after the pitch conversion unit 771 reaches a position directly above the storage section 13.

[0128] 12(E), the pitch conversion unit 771 and the substrate W are lowered to the height position of the rotor 18 (i.e., the second transfer position), and the substrate W is held by the holding grooves of the fixed holding rods 182 of the rotor 18 of the liquid processing unit 10. At this time, the movable holding rods 183 of the rotor 18 have already moved to the release position so as not to impede the above-mentioned descent of the substrate W. The rotor 18 is positioned at an angular position suitable for the transfer of the substrate W (an angular position where the two movable holding rods 183 are at the same height position and are located above the fixed holding rods 182). Next, the movable holding rods 183 are moved to the holding position. This allows the rotor 18 to firmly hold the substrate W.

[0129] Thereafter, pitch conversion unit 771 which has released substrate W is raised and removed from the position near rotor 18. Next, lid portion 14 of liquid processing unit 10 engages with reservoir portion 13. With the above, loading of substrate W into liquid processing unit 10 is completed.

[0130] Thereafter, the liquid processing is performed according to the above-mentioned procedure in liquid processing unit 10. When liquid processing of substrate W in liquid processing unit 10 is completed, the substrate is removed from rotor 18 by transfer mechanism 77 in the reverse procedure to that of loading.

[0131] That is, the cover 14 is moved to the open position, and the movable holding rod 183 is moved to the release position. Next, the pitch conversion unit 771 is moved to the second transfer position, and the substrate W held by the fixed holding rod 182 is adsorbed by the chuck 771b of the pitch conversion unit 771. Next, the pitch conversion unit 771 is raised and further moved to the first transfer position, and the attitude change mechanism 778 is operated to set the attitude of the pitch conversion unit 771 to the first attitude. Next, the pitch change mechanism 771c is operated to change the arrangement pitch of the substrates W from pitch P1 to pitch P2. Next, the substrate transport robot 76 takes out the substrate W held by the pitch conversion unit 771, and carries it into the empty substrate storage container C (preferably the original substrate storage container C) that was placed on the specific container placement table 721S described above.

[0132] Next, a description will be given of configuration examples of the substrate processing system 70. In each example, the configurations of the container transfer unit (load port) 71 and the container storage unit 72 may be substantially the same. In each example, the configuration of the processing unit 73 is different from each other.

[0133] <First configuration example> The first configuration example is the configuration shown in Fig. 8A to Fig. 8B. In the first configuration example, the processing section 73 has a first area 73A in which the liquid processing units 10 and the transfer mechanism 77 are arranged, and a second area 73B in which the substrate transport robot 76 is arranged. The first area 73A has a two-layer structure consisting of an upper first layer 73A1 and a lower second layer 73A2. Two liquid processing units 10 and two transfer mechanisms 77 are arranged in the first layer 73A1. One transfer mechanism 77 is arranged for one liquid processing unit 10. Two liquid processing units 10 and two transfer mechanisms 77 are also provided in the second layer 73A2 in the same arrangement as in the first layer 73A1.

[0134] One substrate transport robot 76 is disposed in the second area 73B. This one substrate transport robot 76 can carry the substrate W into and out of the substrate transport container C placed on the specific container mounting stage 721S described above, and can also transfer the substrate W to and from both of the two transfer mechanisms 77 on the first layer 73A1 and the two transfer mechanisms 77 on the second layer 73A2.

[0135] The transfer of the substrate W between the transfer mechanism 77 arranged on the upper first layer 73A1 and the substrate transport robot 76 is preferably performed with the pitch conversion unit 771 of the transfer mechanism 77 positioned at the lowest position by the Z-direction movement mechanism 774. The transfer of the substrate W between the transfer mechanism 77 arranged on the lower second layer 73A12 and the substrate transport robot 76 is preferably performed with the pitch conversion unit 771 of the transfer mechanism 77 positioned at the highest position by the Z-direction movement mechanism 774. This makes it possible to reduce the vertical movement range of the substrate transport robot 76.

[0136] A partition may be provided between the first area 73A and the second area 73B. In this case, the partition may be provided with a window that is closed by a shutter, and the substrate transport robot 76 may deliver the substrate W to and from each transfer mechanism 77 through this window.

[0137] A set of one transfer mechanism 77 and one or more liquid processing units 10 in which the one transfer mechanism 77 is responsible for transferring and converting the pitch of the substrate W is referred to as a "processing unit." In this first configuration example, one processing unit is made up of one transfer mechanism 77 and one liquid processing unit 10. Two processing units are provided on the first layer 73A1, and two processing units are provided on the second layer 73A2.

[0138] <Second configuration example> 13, two liquid processing units 10 and one transfer mechanism 77 are arranged on the first floor 73A1 of the processing section 73, and two liquid processing units 10 and one transfer mechanism 77 are also provided on the second floor 73A2 in the same arrangement as on the first floor 73A1. That is, in this second configuration example, one transfer mechanism 77 can transfer the substrate W between both of the two liquid processing units 10 on each floor (73A1, 73A2). In other words, one processing unit is composed of one transfer mechanism 77 and one liquid processing unit 10.

[0139] For this reason, one transfer mechanism 77 further includes a horizontal guide rail 779 that guides the lateral guide rail 773 in the horizontal direction (X direction) perpendicular to the lateral guide rail 773, and an X-direction drive mechanism (not shown) that moves the lateral guide rail 773 along the horizontal guide rail 779. In other respects, the configuration of the second configuration example is the same as that of the first configuration example. In the second configuration example, the horizontal operating range of the substrate transport robot 76 can be made smaller than in the first configuration example.

[0140] <Third configuration example> In the third configuration example shown in FIG. 14 and FIG. 15, the function of moving the pitch conversion unit 771 and changing the posture of the pitch conversion unit 771 is provided by the articulated robot 777. In this case, the substrate processing system 1 has only one transfer mechanism 77 configured by a set of the pitch conversion unit 771 and the articulated robot 777. In this case, the transfer mechanism 77 can be arranged in the second area 73B where the substrate transport robot 76 is arranged, not in the first area 73A where the liquid processing units 10 are arranged, and in this case, the transfer mechanism 77 transfers the substrate W between the substrate transport robot 76 and the transfer mechanism 77 in the second area 73B. The transfer mechanism 77 can transfer the substrate W between the two liquid processing units 10 on the first layer 73A1 and the two liquid processing units 10 on the second layer 73A2. In other words, one processing unit is configured by one transfer mechanism 77 and four liquid processing units 10. 14 is a view of the substrate processing system seen from the same viewpoint as in FIG. 8A, and FIG. 15 is a view of the substrate processing system seen from the same viewpoint as in FIG. 8C.

[0141] <Fourth configuration example> 16, in addition to the components of the first configuration example, processor 73 further includes additional area 73A' in which another liquid processing unit 10 and another transfer mechanism 77 are arranged. Similar to first area 73A, additional area 73A' has a two-layer structure consisting of an upper first layer and a lower second layer, and liquid processing units 10 and transfer mechanisms 77 can be arranged in these first and second layers. Substrate transport robot 76 in second area 73B can transfer substrates W to and from all transfer mechanisms 77 in first area 73A and additional area 73A'.

[0142] <Fifth Configuration Example> In a fifth configuration example shown in FIG. 17, in addition to the configuration of the fourth configuration example, another additional area 73A" having the same configuration and function as the additional area 73A' of the fourth configuration example is arranged at a position different from that of the fourth configuration example. In this fifth configuration example, the substrate transport robot 76 in the second area 73B can transfer substrates W to and from all of the transfer mechanisms 77 in the first area 73A, the additional area 73A' and the additional area 73A". In this fifth configuration example, a chemical box (a chemical liquid supply section including a tank, etc.) is provided in the empty space in the additional area 73A'. It is to be noted that a configuration in which the additional area 73A' is removed from the fifth configuration example can also be adopted.

[0143] In any of the first to fifth configuration examples, the pitch conversion unit 771 that receives the substrate W from the substrate transport robot 76 transfers the substrate directly to the rotor 18 of the liquid processing unit 10 without passing through other substrate holding members or substrate holding structures. This allows the number of components of the substrate processing system to be reduced. For example, in one configuration example according to the conventional technology, the substrate transport robot (first substrate transport mechanism) that takes out the substrate from the substrate storage container transfers the substrate to the pitch changer, which transfers the substrate to another substrate transport robot (second substrate transport mechanism), which transfers the substrate to a substrate holder that holds the substrate in a processing container or processing bath. In the above embodiment, a transfer device that is integrated to have a pitch changer function and a substrate transport robot function is used, so that the number of steps involved in the transfer is reduced and efficient transfer is achieved. In addition, the probability of occurrence of defects such as damage to the substrate or generation of particles that may occur during transfer can be reduced. In addition, the degree of freedom in the device layout is improved.

[0144] The above advantages can be achieved even if the substrate holding part (substrate holder) that holds multiple substrates in liquid processing unit 10 is not of a rotating type. In other words, the substrate holding part may be of a non-rotating type called a wafer boat or the like that holds multiple substrates in a substantially stationary state in the processing tank.

[0145] The embodiments disclosed herein should be considered as illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0146] 12 Processing vessel 121 First side wall 13 Storage section 14 Lid 16 Reservoir opening 18 Substrate holder (rotor) 21 First Rotation Axis 24 Rotation drive unit 30 Processing fluid nozzle

Claims

1. a processing vessel including a storage portion for storing a processing liquid and a lid portion engaging with the storage portion so as to close an opening provided at an upper portion of the storage portion; a substrate holder configured to hold a plurality of substrates in a vertical position and spaced apart in a horizontal direction within the processing vessel; a first rotation shaft extending horizontally from a first side of the substrate holding part to an outside of the processing vessel through a first sidewall of the processing vessel; a rotation drive unit provided outside the processing vessel and configured to rotate the first rotation shaft to rotate the substrate holder about a horizontal axis; at least one processing fluid nozzle provided on the lid of the processing vessel for supplying a processing fluid to the substrate held by the substrate holder or to a space surrounding the substrate; Equipped with The processing vessel is configured such that, when the lid portion closes the opening of the storage portion, a sealed internal space is formed inside the processing vessel, the processing vessel is configured such that a substrate can be loaded and unloaded from the substrate holder when the lid opens the opening of the storage portion; a liquid processing is performed in a state where only a lower portion of each of the plurality of substrates held by the substrate holding unit and rotated about a horizontal axis is immersed in the processing liquid stored in the storage unit; the at least one processing fluid nozzle is provided to supply the processing fluid from a height position higher than a liquid level of the processing fluid stored in the storage section, The internal space of the processing vessel is a processing chamber in which the substrate holder is accommodated; a first sub-chamber and a second sub-chamber provided on both sides of the processing chamber in a direction in which the first rotation axis extends; It is divided into the processing chamber and the first sub-chamber are separated by a first partition wall, the processing chamber and the second sub-chamber are separated by a second partition wall, The first partition wall allows a fluid to flow between the processing chamber and the first sub-chamber. At least one first communication passage is provided; the second partition wall is provided with at least one second communication passage that allows a fluid to flow between the processing chamber and the second sub-chamber; Substrate processing equipment.

2. The substrate processing apparatus of claim 1 , further comprising: another processing fluid supply nozzle provided in the storage section to supply, to the storage section, a processing fluid different from the processing fluid supplied from the at least one processing fluid nozzle provided in the lid section.

3. 3 . The substrate processing apparatus according to claim 1 , wherein the processing vessel is provided with an exhaust port for exhausting an internal space of the processing vessel from a height position higher than a liquid level of the processing liquid stored in the storage portion.

4. 2. The substrate processing apparatus according to claim 1, wherein the processing vessel is provided with a first exhaust port opening into the first sub-chamber and a second exhaust port opening into the second sub-chamber, and an atmosphere within the processing chamber can be exhausted via the first communication passage, the first sub-chamber, and the first exhaust port, and via the second communication passage, the second sub-chamber, and the second exhaust port.

5. 2. The substrate processing apparatus according to claim 1, wherein a first drainage outlet opening into the first sub-chamber and a second drainage outlet opening into the second sub-chamber are provided in a bottom part of the processing vessel, and liquid in the processing chamber can be discharged via the first communication passage, the first sub-chamber, and the first drainage outlet, and via the second communication passage, the second sub-chamber, and the second drainage outlet.

6. a second rotation shaft extending in a direction opposite to the first rotation shaft from a second side portion of the substrate holding portion opposite the first side portion, a first through hole through which the first rotation shaft passes, and a second through hole through which the second rotation shaft passes, the first partition wall is provided with a first through hole, and the second partition wall is provided with a second through hole through which the second rotation shaft passes, a first gap serving as the at least one first communication passage that allows a processing liquid to flow from the processing chamber to the first sub-chamber is provided between an outer circumferential surface of the first rotation shaft and an inner circumferential surface of the first through hole, 6. The substrate processing apparatus according to claim 5, wherein a second gap serving as the at least one second communication passage is provided between an outer circumferential surface of the second rotation shaft and an inner circumferential surface of the second through hole, allowing a processing liquid to flow from the processing chamber to the second sub-chamber.

7. the second rotation shaft extends through a second side wall of the processing vessel to an outside of the processing vessel; 7. The substrate processing apparatus of claim 6, wherein the processing vessel is divided into upper and lower parts at a height position of the axes of the first and second rotating shafts, and has a lower half forming the storage portion and an upper half forming the lid portion.

8. 8. The substrate processing apparatus of claim 7, wherein the first rotating shaft and the second rotating shaft are each supported by a bearing outside the processing vessel, and a portion of a first side wall of the processing vessel through which the first rotating shaft penetrates and a portion of a first side wall of the processing vessel through which the second rotating shaft penetrates are sealed by a labyrinth seal.

9. The at least one processing fluid nozzle includes: a rinse nozzle that ejects a rinse liquid toward the plurality of substrates held by the substrate holder; a solvent nozzle that ejects an organic solvent toward the plurality of substrates held by the substrate holder to prevent the substrates from collapsing during drying; and a gas nozzle for discharging an inert gas or a gas with a low oxygen concentration into a space around the plurality of substrates held by the substrate holder; The substrate processing apparatus according to claim 1 , further comprising at least one of:

10. the at least one processing fluid nozzle includes at least a gas nozzle that discharges an inert gas or a low-oxygen concentration gas into the processing chamber; 5. The substrate processing apparatus according to claim 4, wherein the inert gas or the low oxygen concentration gas discharged from the gas nozzle into the processing chamber can be exhausted via the first communication passage, the first sub-chamber, and the first exhaust port, and via the second communication passage, the second sub-chamber, and the second exhaust port.

11. The substrate processing apparatus according to claim 5 , further comprising a rinse nozzle for supplying a rinse liquid to said first sub-chamber and said second sub-chamber for cleaning the insides of these sub-chambers.

12. A processing vessel having a storage section in which a processing liquid is stored and a lid section which engages with the storage section so as to close an opening provided at an upper portion of the storage section; a substrate holder configured to hold a plurality of substrates in a vertical position and spaced apart in a horizontal direction within the processing vessel; a first rotation shaft extending horizontally from a first side of the substrate holding part to an outside of the processing vessel through a first sidewall of the processing vessel; a rotation drive unit provided outside the processing vessel and configured to rotate the first rotation shaft to rotate the substrate holder about a horizontal axis; at least one processing fluid nozzle provided on the lid of the processing vessel for supplying a processing fluid to the substrate held by the substrate holder or to a space surrounding the substrate; Equipped with The processing vessel is configured such that, when the lid portion closes the opening of the storage portion, a sealed internal space is formed inside the processing vessel, the processing vessel is configured such that a substrate can be loaded and unloaded from the substrate holder when the lid opens the opening of the storage portion; a liquid processing is performed in a state where only a lower portion of each of the plurality of substrates held by the substrate holding unit and rotated about a horizontal axis is immersed in the processing liquid stored in the storage unit; the at least one processing fluid nozzle is provided to supply the processing fluid from a height position higher than a liquid level of the processing fluid stored in the storage section, the at least one processing fluid nozzle includes a rinse nozzle that discharges a rinse liquid, a solvent nozzle that discharges an organic solvent to prevent collapse during drying, and a gas nozzle that discharges an inert gas or a low-oxygen concentration gas, and the rinse nozzle, the solvent nozzle, and the gas nozzle have a plurality of outlets that discharge the processing fluid in a fan shape or a cone shape toward the plurality of substrates held by the substrate holding portion.

13. A substrate processing method performed using a substrate processing apparatus, comprising: The substrate processing apparatus includes: a processing vessel including a storage portion for storing a processing liquid and a lid portion engaging with the storage portion so as to close an opening provided at an upper portion of the storage portion; a substrate holder configured to hold a plurality of substrates in a vertical position and spaced apart in a horizontal direction within the processing vessel; a first rotation shaft extending horizontally from the substrate holder to an outside of the processing vessel through a first side wall of the processing vessel; a rotation drive unit provided outside the processing vessel and configured to rotate the first rotation shaft to rotate the substrate holder about a horizontal axis; at least one processing fluid nozzle provided on the lid of the processing vessel for supplying a processing fluid to the substrate held by the substrate holder or to a space surrounding the substrate; Equipped with The processing vessel is configured such that, when the lid portion closes the opening of the storage portion, a sealed internal space is formed inside the processing vessel, the processing vessel is configured such that a substrate can be loaded and unloaded from the substrate holder when the lid opens the opening of the storage portion; a liquid processing is performed in a state where only a lower portion of each of the plurality of substrates held by the substrate holding unit and rotated about a horizontal axis is immersed in the processing liquid stored in the storage unit; the at least one processing fluid nozzle is provided to supply the processing fluid from a height position higher than a liquid level of the processing fluid stored in the storage section; The internal space of the processing vessel is a processing chamber in which the substrate holder is accommodated; a first sub-chamber and a second sub-chamber provided on both sides of the processing chamber in a direction in which the first rotation axis extends; It is divided into the processing chamber and the first sub-chamber are separated by a first partition wall, the processing chamber and the second sub-chamber are separated by a second partition wall, the first partition wall is provided with at least one first communication passage that allows a fluid to flow between the processing chamber and the first sub-chamber; at least one second communication passage is provided in the second partition wall to allow a fluid to flow between the processing chamber and the second sub-chamber; The substrate processing method includes: a step of opening the opening of the reservoir of the processing vessel by operating a lid of the processing vessel, loading a plurality of substrates into the substrate holder from outside the processing vessel, and then closing the opening of the reservoir with the lid; supplying an atmosphere adjusting gas from the at least one processing fluid nozzle to adjust the atmosphere in the processing vessel; a liquid processing step of performing liquid processing on the plurality of substrates by rotating the substrate holding part while immersing only a lower portion of each of the plurality of substrates held by the substrate holding part in a chemical solution serving as the processing liquid stored in a portion of the storage part of the processing container corresponding to the processing chamber; Equipped with a chemical liquid circulation mechanism for circulating a processing liquid that has been discharged from the processing chamber to the first sub-chamber and the second sub-chamber through the first communication passage and the second communication passage and that is returned to the processing chamber, while the liquid processing is performed on the plurality of substrates.

14. A substrate processing method carried out using a substrate processing apparatus, comprising: The substrate processing apparatus includes: a processing vessel including a storage portion for storing a processing liquid and a lid portion engaging with the storage portion so as to close an opening provided at an upper portion of the storage portion; a substrate holder configured to hold a plurality of substrates in a vertical position and spaced apart in a horizontal direction within the processing vessel; a first rotation shaft extending horizontally from the substrate holder to an outside of the processing vessel through a first side wall of the processing vessel; a rotation drive unit provided outside the processing vessel and configured to rotate the first rotation shaft to rotate the substrate holder about a horizontal axis; at least one processing fluid nozzle provided on the lid of the processing vessel for supplying a processing fluid to the substrate held by the substrate holder or to a space surrounding the substrate; Equipped with The processing vessel is configured such that, when the lid portion closes the opening of the storage portion, a sealed internal space is formed inside the processing vessel, the processing vessel is configured such that a substrate can be loaded and unloaded from the substrate holder when the lid opens the opening of the storage portion; a liquid processing is performed in a state where only a lower portion of each of the plurality of substrates held by the substrate holding unit and rotated about a horizontal axis is immersed in the processing liquid stored in the storage unit; the at least one processing fluid nozzle is provided to supply the processing fluid from a height position higher than a liquid level of the processing fluid stored in the storage section; the at least one processing fluid nozzle includes a rinse nozzle that discharges a rinse liquid, a solvent nozzle that discharges an organic solvent for preventing collapse during drying, and a gas nozzle that discharges an inert gas or a low-oxygen concentration gas, and the rinse nozzle, the solvent nozzle, and the gas nozzle each have a plurality of discharge ports that discharge the processing fluid in a fan shape or a cone shape toward the plurality of substrates held by the substrate holder; The substrate processing method includes: a step of opening the opening of the reservoir of the processing vessel by operating a lid of the processing vessel, loading a plurality of substrates into the substrate holder from outside the processing vessel, and then closing the opening of the reservoir with the lid; supplying an atmosphere adjusting gas from the at least one processing fluid nozzle to adjust the atmosphere in the processing vessel; a chemical processing step of immersing only a lower portion of each of the plurality of substrates held by the substrate holder in a chemical solution as the processing liquid stored in a storage portion of the processing vessel, and rotating the substrate holder while discharging an inert gas or a low-oxygen concentration gas from a gas nozzle, thereby performing a chemical processing on the plurality of substrates; a rinsing step of performing a rinsing process on the plurality of substrates by rotating the substrate holder while discharging the chemical solution from the reservoir and discharging a rinsing liquid from the rinsing nozzle; a replacement step of replacing the rinsing liquid on the surfaces of the plurality of substrates with the organic solvent by rotating the substrate holder while discharging the organic solvent from the solvent nozzle after the rinsing step; a drying step of evaporating the organic solvent on the surfaces of the substrates by reducing the pressure in the internal space of the processing vessel or by rotating the substrate holder while stopping the discharge of the organic solvent from the solvent nozzle after the replacing step; A substrate processing method comprising:

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