SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM

Abstract

To properly remove the periphery of a first substrate in a polymerized substrate where substrates are bonded to each other.SOLUTION: A substrate processing method is for processing a polymerized substrate in which a first substrate and a second substrate are bonded together. The substrate processing method includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate and forming an unbonded region at the peripheral portion that weakens the bonding strength of the first substrate and the second substrate. The unbonded region is formed by irradiating a laser beam from the second substrate side.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing method and a substrate processing system. [Background technology]

[0002] Patent Document 1 discloses a method for grinding a wafer, including a step of irradiating one side of the wafer with a laser beam along the outer periphery at a position a predetermined distance inside the outer periphery to remove the outer periphery of the wafer, and a step of grinding the ground surface of the wafer from which the outer periphery has been removed to form a predetermined finished thickness. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2006-108532 A Summary of the Invention [Problem to be solved by the invention]

[0004] The technique according to the present disclosure appropriately removes the peripheral edge portion of the first substrate in a laminated substrate in which substrates are bonded together. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing method for processing a laminated substrate in which a first substrate and a second substrate are bonded together, the method including: forming a peripheral modified layer along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate; and forming an unbonded region that weakens the bonding strength between the first substrate and the second substrate in the peripheral portion, the unbonded region being formed by irradiating a laser beam from the second substrate side. and after forming the peripheral modified layer and the unbonded region, removing the peripheral portion from the peripheral modified layer, wherein an insertion member is inserted into the interface between the first substrate and the second substrate when removing the peripheral portion. . Effect of the Invention

[0006] According to the present disclosure, in a laminated substrate in which substrates are bonded together, the peripheral edge portion of the first substrate can be appropriately removed. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is an explanatory diagram showing an example of a configuration of a laminated wafer processed in a wafer processing system. [Diagram 2] FIG. 1 is a plan view illustrating an example of a configuration of a wafer processing system. [Diagram 3] FIG. 2 is a flow diagram showing an example of main steps of wafer processing. [Figure 4] 1A to 1C are explanatory views showing an example of main steps of wafer processing. [Diagram 5] 1A to 1C are explanatory views showing an example of main steps of wafer processing. [Figure 6] 1A to 1C are diagrams illustrating the influence of stress generated inside the first wafer. [Figure 7] FIG. 11 is an explanatory view showing an example of another method for separating the first wafer. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] In recent years, in the manufacturing process of semiconductor devices, a semiconductor substrate (hereinafter referred to as a "wafer") having a plurality of devices such as electronic circuits formed on its surface in a laminated substrate formed by bonding substrates together is thinned by grinding the back surface of the wafer.

[0009] By the way, the peripheral edge of the wafer is usually chamfered, but when the wafer is ground as described above, the peripheral edge of the wafer becomes sharp (so-called knife-edge shape). This can cause chipping at the peripheral edge of the wafer, which can damage the wafer. Therefore, so-called edge trimming is performed to remove the peripheral edge of the wafer before the grinding process.

[0010] The grinding method described in the above-mentioned Patent Document 1 is a grinding method for suppressing the formation of this knife edge shape on the outer periphery of the wafer (first wafer). However, when performing edge trim (removal of the outer periphery) of the first wafer bonded to the second wafer by the method described in Patent Document 1, there are cases where the outer periphery cannot be properly removed because the outer periphery is in a state of being bonded to the second wafer. Specifically, for example, there are cases where a part of the outer periphery is not properly peeled off from the first wafer and remains, causing scratches on the back surface of the first wafer or causing the device to break down. Therefore, there is room for improvement in conventional edge trimming.

[0011] Therefore, the technology disclosed herein appropriately removes the peripheral portion of the first substrate in a laminated substrate in which substrates are bonded together. Hereinafter, a wafer processing system as a substrate processing system and a wafer processing method as a substrate processing method according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are denoted by the same reference numerals, and duplicated descriptions will be omitted.

[0012] In the wafer processing system 1 according to the present embodiment, which will be described later, a process is performed on a laminated wafer T, which is a laminated substrate in which a first wafer W1 as a first substrate and a second wafer W2 as a second substrate are bonded together, as shown in FIG. 1. In the wafer processing system 1, the first wafer W1 is thinned while removing a peripheral portion We of the first wafer W1. Hereinafter, in the first wafer W1, a surface on a side bonded to the second wafer W2 is referred to as a front surface W1a, and a surface opposite to the front surface W1a is referred to as a back surface W1b. Similarly, in the second wafer W2, a surface on a side bonded to the first wafer W1 is referred to as a front surface W2a, and a surface opposite to the front surface W2a is referred to as a back surface W2b.

[0013] The first wafer W1 is a semiconductor wafer such as a silicon substrate, and has a device layer D including a plurality of devices formed on its surface W1a. A surface film F is further formed on the device layer D, and the first wafer W1 is bonded to the second wafer W2 via the surface film F. Examples of the surface film F include an oxide film (SiO2 film, TEOS film), a SiC film, a SiCN film, or an adhesive. The peripheral portion We of the first wafer W1 is chamfered, and the cross section of the peripheral portion We becomes thinner toward its tip. The peripheral portion We is a portion to be removed in edge trimming, which will be described later, and is, for example, in the range of 0.5 mm to 3 mm in the radial direction from the outer end of the first wafer W1.

[0014] The second wafer W2 has, for example, the same configuration as the first wafer W1, and has a device layer D and a surface film F formed on its surface W2a, and its peripheral portion is chamfered. Note that the second wafer W2 does not necessarily have to be a device wafer on which a device layer D is formed, and may be, for example, a support wafer that supports the first wafer W1. In such a case, the second wafer W2 functions as a protective material that protects the device layer D on the surface W1a of the first wafer W1.

[0015] In the wafer processing system 1 of the present embodiment, as shown in FIG. 5(c) described later, the first wafer W1 in the overlapped wafer T is thinned by separating it into a front surface W1a side and a back surface W1b side. In the following description, the first wafer W1 on the separated front surface W1a side is referred to as the first separated wafer Wd1, and the first wafer W1 on the separated back surface W1b side is referred to as the second separated wafer Wd2. The first separated wafer Wd1 has a device layer D and is commercialized. The second separated wafer Wd2 is reused. The first separated wafer Wd1 refers to the first wafer W1 in a state bonded to the second wafer W2, and may be referred to as the first separated wafer Wd1 including the second wafer W2. The separated surfaces of the first separated wafer Wd1 and the second separated wafer Wd2 may be referred to as the separated surfaces.

[0016] 2, the wafer processing system 1 has a configuration in which a loading / unloading station 2 and a processing station 3 are integrally connected. The loading / unloading station 2 loads / unloads cassettes Ct, Cw1, and Cw2, each capable of accommodating a plurality of overlapped wafers T, a plurality of first separated wafers Wd1, and a plurality of second separated wafers Wd2, between, for example, the outside. The processing station 3 is equipped with various processing devices that perform desired processing on the overlapped wafers T.

[0017] In the present embodiment, the cassette Ct and the cassette Cw1 are provided separately, but they may be the same cassette, i.e., a common cassette may be used to accommodate the unprocessed laminated wafer T and the processed first separated wafer Wd1.

[0018] The loading / unloading station 2 is provided with a cassette mounting table 10. In the illustrated example, a plurality of cassettes, for example, three cassettes Ct, Cw1, and Cw2, can be freely mounted in a row in the Y-axis direction on the cassette mounting table 10. Note that the number of cassettes Ct, Cw1, and Cw2 mounted on the cassette mounting table 10 is not limited to this embodiment and can be determined arbitrarily.

[0019] In the carry-in / out station 2, a wafer transfer device 20 is provided adjacent to the cassette mounting table 10 on the X-axis negative side of the cassette mounting table 10. The wafer transfer device 20 is configured to be movable on a transfer path 21 extending in the Y-axis direction. The wafer transfer device 20 has, for example, two transfer arms 22, 22 for holding and transferring the overlapped wafer T. Each transfer arm 22 is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis. The configuration of the transfer arm 22 is not limited to this embodiment, and may have any configuration. The wafer transfer device 20 is configured to be able to transfer the overlapped wafer T to the cassettes Ct, Cw1, and Cw2 on the cassette mounting table 10 and a transition device 30 described later.

[0020] In the carry-in / out station 2, a transition device 30 for transferring the overlapped wafer T is provided adjacent to the wafer transfer device 20 on the negative X-axis direction side of the wafer transfer device 20.

[0021] For example, three processing blocks G1 to G3 are provided in the processing station 3. The first processing block G1, the second processing block G2, and the third processing block G3 are arranged in this order from the positive side of the X-axis (the load / unload station 2 side) to the negative side.

[0022] The first processing block G1 is provided with an etching device 40, a cleaning device 41, and a wafer transport device 50. The etching device 40 and the cleaning device 41 are arranged in a stacked manner. Note that the number and arrangement of the etching devices 40 and the cleaning devices 41 are not limited to this. For example, the etching devices 40 and the cleaning devices 41 may be placed side by side in the X-axis direction. Furthermore, the etching devices 40 and the cleaning devices 41 may be stacked.

[0023] The etching device 40 etches the ground surface of the first wafer W1 that has been ground by the processing device 80 described below. For example, a chemical solution (etchant) is supplied to the ground surface to wet-etch the ground surface. For example, HF, HNO3, H3PO4, TMAH, Choline, KOH, etc. are used as the chemical solution.

[0024] The cleaning device 41 cleans the ground surface of the first wafer W1 ground by the processing device 80 described later. For example, a brush is brought into contact with the ground surface to scrub the ground surface. Note that a pressurized cleaning liquid may be used to clean the ground surface. The cleaning device 41 may be configured to clean the back surface W2b of the second wafer W2 as well as the ground surface of the first wafer W1.

[0025] The wafer transport device 50 is disposed, for example, on the Y-axis negative side of the etching device 40 and the cleaning device 41. The wafer transport device 50 has, for example, two transport arms 51, 51 for holding and transporting the overlapped wafer T. Each transport arm 51 is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis. Note that the configuration of the transport arm 51 is not limited to this embodiment, and may have any configuration. The wafer transport device 50 is configured to be able to transport the overlapped wafer T to the transition device 30, the etching device 40, the cleaning device 41, the interface modification device 60 described later, the internal modification device 61 described later, and the edge removal device 62 described later.

[0026] The second processing block G2 is provided with an interface modification device 60 as a second modification section, an internal modification device 61 as a first modification section and a third modification section, an edge removal device 62 as a removal section, and a wafer transfer device 70. The interface modification device 60, the internal modification device 61, and the edge removal device 62 are arranged in a stacked manner. Note that the number and arrangement of the interface modification device 60, the internal modification device 61, and the edge removal device 62 are not limited to this. For example, the interface modification device 60, the internal modification device 61, and the edge removal device 62 may be arranged side by side in the X-axis direction. Furthermore, the interface modification device 60, the internal modification device 61, and the edge removal device 62 may be arranged in a stacked manner.

[0027] The interface modification device 60 irradiates, for example, a laser beam (interface laser beam, for example, a CO2 laser) onto the outer periphery of the device layer D of the first wafer W1 to modify the outer periphery of the device layer D. More specifically, it modifies the interface between the first wafer W1 and the device layer D at the peripheral portion We of the first wafer W1 to be removed. As a result, an unbonded region Ae is formed in the peripheral portion We of the first wafer W1, where the bonding strength between the first wafer W1 and the second wafer W2 is reduced.

[0028] The internal modification device 61 irradiates the inside of the first wafer W1 with laser light (internal laser light, e.g., a YAG laser) to form a peripheral modified layer M1, a divided modified layer M2, and an internal surface modified layer M3. The peripheral modified layer M1 serves as a base point for peeling off the peripheral portion We in the edge trim described below. The divided modified layer M2 serves as a base point for dividing the peripheral portion We to be removed into small pieces. The internal surface modified layer M3 serves as a base point for separating the first wafer W1 into a first separated wafer Wd1 and a second separated wafer Wd2.

[0029] The edge removal device 62 removes the edge portion We of the first wafer W1, i.e., performs edge trimming, using the peripheral modified layer M1 and the divided modified layer M2 formed in the internal modification device 61 as base points. The method of edge trimming can be selected arbitrarily.

[0030] The wafer transport device 70 is disposed, for example, on the Y-axis positive side of the interface modification device 60, the internal modification device 61, and the edge removal device 62. The wafer transport device 70 has, for example, two transport arms 71, 71 that transport the overlapped wafer T by suction and holding it by an suction holding surface (not shown). Each transport arm 71 is supported by an articulated arm member 72 and is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis. Note that the configuration of the transport arm 71 is not limited to this embodiment, and may have any configuration. The wafer transport device 70 is configured to be able to transport the overlapped wafer T to the etching device 40, the cleaning device 41, the interface modification device 60, the internal modification device 61, the edge removal device 62, and the processing device 80 described later.

[0031] The third processing block G3 is provided with a processing device 80. The number and arrangement of the processing devices 80 are not limited to the example shown in the figure, and a plurality of processing devices 80 may be arranged arbitrarily.

[0032] The processing device 80 has a rotating table 81. The rotating table 81 is configured to be freely rotatable around a vertical rotation center line 82 by a rotating mechanism (not shown). Two chucks 83 that suction-hold the overlapped wafers T are provided on the rotating table 81. The chucks 83 are evenly arranged on the same circumference as the rotating table 81. The two chucks 83 can be moved to a delivery position A0 and a processing position A1 by the rotation of the rotating table 81. Furthermore, each of the two chucks 83 is configured to be rotatable around a vertical axis by a rotating mechanism (not shown).

[0033] At the delivery position A0, the overlapped wafer T is delivered. At the processing position A1, a grinding unit 84 is disposed and grinds the first wafer W1. The grinding unit 84 has a grinding section 85 equipped with a grinding wheel (not shown) that is annular and rotatable. The grinding section 85 is configured to be movable in the vertical direction along a support 86. Then, with the grinding wheel abutting against the overlapped wafer T held by the chuck 83, the chuck 83 and the grinding wheel are each rotated.

[0034] The above-described wafer processing system 1 is provided with a control device 90. The control device 90 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the laminated wafer T in the wafer processing system 1. The program storage unit also stores a program for controlling the operation of a drive system such as the above-described various processing devices and transport device to realize wafer processing in the wafer processing system 1, which will be described later. The above-described program may be recorded in a computer-readable storage medium H, and may be installed in the control device 90 from the storage medium H.

[0035] Next, a description will be given of wafer processing performed using the thus configured wafer processing system 1. In this embodiment, the first wafer W1 and the second wafer W2 are bonded in a bonding device (not shown) outside the wafer processing system 1 to form a laminated wafer T in advance.

[0036] First, a cassette Ct containing a plurality of overlapped wafers T shown in FIG. 4( a ) is placed on the cassette placement table 10 of the carry-in / out station 2 .

[0037] Next, the overlapped wafer T is removed from the cassette Ct by the wafer transfer device 20 and transferred to the transition device 30.

[0038] Next, the overlapped wafer T is taken out of the transition device 30 by the wafer transport device 50 and transported to the interface modification device 60. In the interface modification device 60, as shown in FIG. 4(b), a laser beam is irradiated onto the interface between the first wafer W1 and the device layer D to modify the interface (step S1 in FIG. 3).

[0039] In step S1, when the interface between the first wafer W1 and the device layer D is modified, the bonding strength between the first wafer W1 and the second wafer W2 is reduced. As a result, a bonding region Ac where the first wafer W1 and the second wafer W2 are bonded and an unbonded region Ae, which is a region where the bonding strength is reduced and is located radially outside the bonding region Ac, are formed at the interface between the first wafer W1 and the device layer D. In edge trimming, which will be described later, the peripheral portion We of the first wafer W1, which is the object to be removed, is removed, and the presence of the unbonded region Ae allows the peripheral portion We to be appropriately removed (peeled off).

[0040] In forming the unbonded region Ae, the laser light is applied while rotating the overlapped wafer T (first wafer W1) about the central axis of the overlapped wafer T (first wafer W1). As a result, the unbonded region Ae is formed concentrically with the overlapped wafer T (first wafer W1). The radially inner end (hereinafter referred to as the "inner end") of the unbonded region Ae is located slightly radially outward from the inner end of the peripheral portion We that is actually removed, that is, the formation position of the peripheral modified layer M1 formed in the internal modification device 61 described below.

[0041] In the illustrated example, the unbonded region Ae is formed at the interface between the first wafer W1 and the device layer D, but the position at which the unbonded region Ae is formed is not limited to this as long as it is inside the overlapped wafer T and can reduce the bonding strength between the first wafer W1 and the second wafer W2. For example, the unbonded region Ae may be formed at the interface between the second wafer W2 and the device layer D, or may be formed at the interface of the surface films F where the first wafer W1 and the second wafer W2 are actually bonded.

[0042] Furthermore, when the unbonded region Ae is formed, for example, at the interface between the second wafer W2 and the device layer D, it may be formed by irradiating laser light from above the inverted overlapped wafer T, i.e., from the second wafer W2 side.

[0043] Here, in order to effectively promote the removal of the peripheral portion We bordering the unbonded region Ae in the subsequent edge trimming process, it is preferable that the wavelength of the interface laser light has a wavelength band of 8.9 μm to 11 μm. Specifically, for example, when the surface film F is made of a SiO2 film, it is known that the most efficient light absorption is the asymmetric expansion peak with the largest absorption coefficient, and in order to absorb light at such an asymmetric expansion peak, it is preferable that the wavelength of the laser light is between 8.9 μm and 11 μm.

[0044] In this embodiment, the CO2 laser used as the interface laser light has many oscillation lines in the wavelength band of 8.9 μm to 11 μm. In other words, in consideration of the above circumstances, in order to form the unbonded area Ae in the surface film F made of the SiO2 film, it is preferable to use a CO2 laser as the interface laser light, and more preferably, a CO2 laser light with a wavelength of about 9.3 μm is desirable.

[0045] The overlapped wafer T with the unbonded region Ae formed therein is then transferred to the internal reforming device 61 by the wafer transfer device 70. In the internal reforming device 61, a peripheral reformed layer M1 and a divided reformed layer M2 are sequentially formed inside the first wafer W1 as shown in FIG. 4(c) (step S2 in FIG. 3), and further, an internal surface reformed layer M3 is formed as shown in FIG. 5(a) (step S3 in FIG. 3). In order to avoid complexity in the illustration, the divided reformed layer M2 is omitted from the drawings after FIG. 4(c).

[0046] To form the peripheral modified layer M1, a laser head (not shown) periodically irradiates the inside of the first wafer W1 with laser light while rotating the overlapped wafer T (first wafer W1). As a result, the peripheral modified layer M1 is formed in a ring shape concentric with the bonding region Ac (unbonded region Ae). The number of peripheral modified layers M1 formed in the thickness direction of the first wafer W1 is not limited to the example shown in the figure, and can be determined arbitrarily.

[0047] Here, the peripheral modified layer M1 is formed slightly radially inward from the inner end of the unbonded region Ae as described above. Ideally, the peripheral modified layer M1 is formed at a position overlapping the boundary between the bonded region Ac and the unbonded region Ae (hereinafter simply referred to as the "boundary"). However, for example, due to processing errors, the peripheral modified layer M1 may be formed at a position away from the boundary radially outward, that is, in the unbonded region Ae, and the first wafer W1 may be floating with respect to the second wafer W2 after the peripheral portion We is removed. If the first wafer W1 is floating in this way, the edge of the first wafer W1 may be chipped during subsequent wafer processing or wafer transport, which may cause contamination.

[0048] In this regard, by controlling the peripheral modified layer M1 to be formed radially inward from the boundary as shown in Figure 4(c), even if the formation position is shifted due to, for example, a processing error, the peripheral modified layer M1 can be formed at a position overlapping the boundary or at a position close to the boundary even if it is radially inward from the boundary, and the formation of the peripheral modified layer M1 at a position away from the boundary in the radial direction can be suppressed.

[0049] In addition, inside the first wafer W1, a crack C1 as a first crack extends from the peripheral modified layer M1 in the thickness direction (hereinafter, sometimes referred to as the "vertical direction", with the back surface W1b side of the first wafer W1 being "upward" and the front surface W1a side being "downward"). The crack C1 extending upward from the peripheral modified layer M1 reaches, for example, the back surface W1b of the first wafer W1. On the other hand, the crack C1 extending downward does not reach the front surface W1a of the first wafer W1. Specifically, the extension of the crack C1 is controlled so that the lower end of the crack C1 is located at least above the inner end of the unbonded region Ae. The extension of the crack C1 is controlled, for example, by adjusting the formation position of the peripheral modified layer M1 in the thickness direction of the first wafer W1, or, for example, by adjusting the output or blur of the laser light when forming the peripheral modified layer M1.

[0050] For example, if the crack C1 extends below the inner end of the unbonded region Ae, the peripheral portion We may not be properly removed. Specifically, when the unbonded region Ae is formed, ablation occurs when the interface is irradiated with a laser, and internal stress σ accumulates in the portion where the unbonded region Ae is formed. Then, in the outer periphery of the first wafer W1 where the unbonded region Ae is formed, a force in the peeling direction (vertical direction) acts due to the internal stress σ. Therefore, as shown in FIG. 6, in addition to the crack C1, a crack C2 may extend obliquely upward from the inner end of the unbonded region Ae in the outer periphery of the first wafer W1. The inventors have found that if crack C1 and crack C2 are not connected in this manner, or if crack C1 extends to the surface W1a of the first wafer W1, the peeling will not be stable when removing the peripheral portion We, and there will be parts of the peripheral portion We that are removed using crack C1 as a base point and parts that are removed using crack C2 as a base point, resulting in an uneven peeling surface of the peripheral portion We around the entire circumference.

[0051] In this respect, according to the present embodiment, the lower end of the crack C1 is located at least above the inner end of the unbonded region Ae, and the inner end of the unbonded region Ae is located radially outward from the peripheral modified layer M1, so that the crack C2 extending obliquely upward from the inner end of the unbonded region Ae is connected to the crack C1. That is, as shown in FIG. 4(d), the crack C1 extending vertically downward from the peripheral modified layer M1 to the device layer D disappears, and the crack C2 extending obliquely upward from the inner end of the unbonded region Ae to the crack C1 is formed over the entire circumference of the first wafer W1. In this way, the crack C1 and the crack C2 are integrated, so that the peeled cross section of the peripheral portion We can be stably formed.

[0052] Here, it is desirable that the crack C2 is connected to the lower end of the crack C1 as shown in FIG. 4(d) and the crack C1 and the crack C2 are integrated, but the connection part of the crack C1 and the crack C2 does not necessarily have to be the lower end of the crack C1. Specifically, if the lower end of the crack C1 is positioned above the peeling surface (more specifically, the grinding surface) of the first wafer W1 described later, even if the peeling is not stable when removing the peripheral part We, the peripheral part We will not remain on the first separated wafer Wd1 after thinning (after grinding). That is, by positioning the lower end of the crack C1 above the peeling surface (grinding surface), even if the connection part of the crack C1 and the crack C2 is not the lower end of the crack C1, the removal of the peripheral part We and the thinning of the first wafer W1 can be appropriately performed.

[0053] In addition, when controlling the formation of the peripheral modified layer M1 so that the crack C1 does not extend downward from the peripheral modified layer M1, or when the lower end of the crack C1 is located above the peeling surface described below, the crack C2 may be connected to the peripheral modified layer M1.

[0054] Furthermore, the crack C2 connecting the crack C1 to the inner end of the unbonded area Ae extends as the internal stress is released due to the impact of laser irradiation during the formation of the peripheral modification layer M1, and the impacts caused by subsequent wafer processing and wafer transport.

[0055] When the peripheral modified layer M1 is formed, a laser head (not shown) is moved to form divided modified layers M2 extending in the radial direction of the first wafer W1 on the radial outer side of the peripheral modified layer M1. In the example of Fig. 1 and Fig. 4(c), the divided modified layers M2 are formed at eight locations in the circumferential direction of the first wafer W1 and three locations in the thickness direction, but the number of divided modified layers M2 is arbitrary.

[0056] Subsequently, as shown in FIG. 5(a), an internal surface modified layer M3 is formed inside the first wafer W1. To form the internal surface modified layer M3, a laser head (not shown) periodically irradiates the laminated wafer T (first wafer W1) with laser light while rotating the laminated wafer T (first wafer W1), and the laser head is moved relatively radially inward of the first wafer W1. As a result, an internal surface modified layer M3 is formed on the entire surface of the first wafer W1 along the surface direction. In addition, a crack C3 extends from the internal surface modified layer M3 in the surface direction inside the first wafer W1. The crack C3 extends only radially inward of the peripheral modified layer M1.

[0057] The lower end of the formed inner surface modification layer M3 is located above the surface of the first separated wafer Wd1 after the final finishing process after separation. That is, the formation position is adjusted so that the inner surface modification layer M3 does not remain on the first separated wafer Wd1 after grinding.

[0058] After the inner surface modified layer M3 is formed inside the first wafer W1, the overlapped wafer T is then transferred from the inner modification device 61 to the edge removal device 62 by the wafer transfer device .

[0059] In the edge removing device 62, as shown in FIG. 5(b), the edge portion We of the first wafer W1 is removed starting from the edge modified layer M1 (crack C1), the unbonded area Ae, and the crack C2 (step S4 in FIG. 3).

[0060] When removing the peripheral portion We, a blade as an inserting member having a wedge shape may be inserted into the bonding interface between the first wafer W1 and the second wafer W2 forming the overlapped wafer T. As a result, when removing the peripheral portion We, the impact of inserting the blade causes the peripheral portion We to be appropriately peeled off from the peripheral modified layer M1. In this case, even if the lower end of the crack C1 and the inner end of the unbonded region Ae are not connected by the crack C2 when the peripheral modified layer M1 is formed, the impact of inserting the blade can appropriately extend the crack C2 and connect the crack C1 and the inner end of the unbonded region Ae. At this time, the crack C1 and the crack C2 are formed as one inside the first wafer W1 as described above, and the bonding strength with the second wafer W2 is reduced by the unbonded region Ae, so that the peripheral portion We is appropriately removed.

[0061] The laminated wafer T from which the peripheral portion We of the first wafer W1 has been removed is then transported by the wafer transport device 70 from the peripheral removal device 62 to the processing device 80. In the processing device 80, the first wafer W1 is first separated into a first separated wafer Wd1 and a second separated wafer Wd2 using the inner surface modification layer M3 (crack C3) as a base point as shown in FIG. 5(c) (step S5 in FIG. 3).

[0062] When separating the first wafer W1, the transfer arm 71 is raised while the back surface W1b of the first wafer W1 is held by suction by the transfer arm 71 and the back surface W2b of the second wafer W2 is held by suction by the chuck 83. As a result, the first wafer W1 is separated into the first separated wafer Wd1 and the second separated wafer Wd2 with the inner surface modified layer M3 as the base point, and the second separated wafer Wd2 is lifted upward while being held by the transfer arm 71.

[0063] The separated second separated wafer Wd2 is placed, for example, on the delivery position A0 and sucked and adsorbed by the suction holding surface of the transfer arm 71, and then collected outside the wafer processing system 1. In addition, for example, a collection unit (not shown) may be provided within the movable range of the transfer arm 71, and the second separated wafer Wd2 may be collected by releasing the suction holding of the second separated wafer Wd2 in the collection unit.

[0064] In this embodiment, the first wafer W1 is separated by lifting the transfer arm 71, but the transfer arm 71 may be rotated to cut the second separated wafer Wd2 at the inner surface modification layer M3, and then the transfer arm 71 may be lifted. Alternatively, for example, a pressure sensor (not shown) may be provided on the transfer arm 71 to measure the pressure for sucking the second separated wafer Wd2, thereby detecting the presence or absence of the second separated wafer Wd2 and confirming whether the first wafer W1 has been separated.

[0065] Next, the chuck 83 is moved to the processing position A1. Then, the grinding unit 84 grinds the separation surface of the overlapped wafer T after separation held by the chuck 83, that is, the first separated wafer Wd1, as shown in FIG. 5(d), and removes the peripheral modified layer M1 and the inner surface modified layer M3 remaining on the separation surface (step S6 in FIG. 3). In step S6, the overlapped wafer T (first separated wafer Wd1) and the grinding wheel are rotated while the grinding wheel is in contact with the separation surface, to grind the separation surface. After that, the ground surface of the first separated wafer Wd1 may be cleaned with a cleaning liquid using a cleaning liquid nozzle (not shown).

[0066] Next, the overlapped wafer T is transferred to the cleaning device 41 by the wafer transfer device 70. In the cleaning device 41, the ground surface of the first separated wafer Wd1 is scrubbed and cleaned (step S7 in FIG. 3). Note that in the cleaning device 41, the back surface W2b of the second wafer W2 may be cleaned together with the ground surface of the first separated wafer Wd1.

[0067] Next, the laminated wafer T is transported by the wafer transport device 50 to the etching device 40. In the etching device 40, the ground surface of the first separated wafer Wd1 is wet-etched with a chemical solution (step S8 in FIG. 3). Grinding marks may be formed on the ground surface ground by the above-mentioned processing device 80. In this step S8, the grinding marks can be removed by wet etching, and the ground surface can be smoothed.

[0068] Thereafter, the laminated wafer T which has been subjected to all the processes is transferred by the wafer transfer device 50 to the transition device 30, and further transferred by the wafer transfer device 20 to the cassette Cw1 on the cassette mounting table 10. In this manner, a series of wafer processes in the wafer processing system 1 is completed.

[0069] According to the above embodiment, the lower end of the crack C1 extending from the peripheral modified layer M1 is located at least above the unbonded region Ae, and the inner end of the unbonded region Ae is located radially outward from the lower end of the crack C1, so that the lower end of the crack C1 and the inner end of the unbonded region Ae can be appropriately connected by the crack C2. This prevents the crack C1 and the crack C2 from extending in parallel inside the first wafer W1, so that the removal of the peripheral portion We can be stably performed all around, that is, the removal of a part of the peripheral portion We to be removed can be prevented from remaining on the overlapped wafer T.

[0070] In addition, since the peripheral portion We is prevented from remaining on the first separated wafer Wd1 in this manner, chipping and particle generation in subsequent wafer processing are prevented, and damage to the overlapped wafer T and various processing equipment can be appropriately suppressed.

[0071] Furthermore, since the inner end of the unbonded area Ae is located radially outward from the lower end of the crack C1, it is possible to appropriately prevent the first wafer W1 from floating relative to the second wafer W2 after the peripheral portion We is removed.

[0072] In addition, it is desirable that the lower end of the peripheral modified layer M1 is located above the unbonded region Ae and also above the internal surface modified layer M3. In this embodiment, the edge trim can be performed appropriately by making the lower end of the crack C1 extending from the peripheral modified layer M1 at least above the unbonded region Ae. However, if the lower end of the peripheral modified layer M1 is located below the internal surface modified layer M3, the quality of the edge trim may be reduced. Specifically, for example, the peripheral modified layer M1 may remain on the surface or side of the first separated wafer Wd1 after the final finishing process after separation, which may cause the finished surface to become rough. From this perspective, in order to prevent the peripheral modified layer M1 from remaining on the final finished surface of the first separated wafer Wd1, it is preferable that the lower end of the peripheral modified layer M1 is located above the internal surface modified layer M3.

[0073] In the above embodiment, the unbonded region Ae is formed at the interface between the first wafer W1 and the device layer D (step S1 in FIG. 3), and then the peripheral modified layer M1 is formed inside the first wafer W1 (step S2 in FIG. 3). However, the order of the wafer processing steps is not limited to this. That is, for example, the peripheral modified layer M1 may be formed inside the first wafer W1, and then the unbonded region Ae may be formed radially outward of the peripheral modified layer M1. In such a case, the crack C2 connecting the crack C1 and the inner end of the unbonded region Ae extends, for example, when the unbonded region Ae is formed.

[0074] In the above embodiment, the unbonded region Ae is formed in the interface modification device 60 provided in the wafer processing system 1, but the unbonded region Ae may be formed outside the wafer processing system 1. In addition, the unbonded region Ae may be formed in the first wafer W1 before bonding to the second wafer W2.

[0075] In the above embodiment, the crack C1 extending upward from the peripheral modified layer M1 reaches the back surface W1b of the first wafer W1. However, as shown in FIG. 7(a), the crack C1 may not reach the back surface W1b, but may be connected to the crack C3 extending from the internal surface modified layer M3 in the surface direction. In this case, in the separation of the first wafer W1, the second separation wafer Wd2 is separated together with the peripheral portion We as shown in FIG. 7(b). That is, the removal of the peripheral portion We and the separation of the first wafer W1 are performed simultaneously. In this way, when the second separation wafer Wd2 and the peripheral portion We are separated together, the divided modified layer M2 does not need to be formed in step S2 of FIG. 3 in the above embodiment.

[0076] In the above embodiment, the first wafer W1 is separated (thinned) from the inner surface modified layer M3 by forming the inner surface modified layer M3 inside the first wafer W1, but the method of thinning the first wafer W1 is not limited to this. For example, the unbonded region Ae, the peripheral modified layer M1, and the divided modified layer M2 may be formed on the overlapped wafer T, and the peripheral portion We of the first wafer W1 may be removed, and then the first wafer W1 may be thinned by a grinding process in the processing device 80 as a grinding unit.

[0077] The embodiments disclosed herein should be considered as illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0078] 1. Wafer Processing System 60 Interface Modification Equipment 61 Internal Reformer 62 Edge removal device 90 Control device Ae Unbonded area C1 Crack M1 Periphery modification layer T Polymer Wafer W1 First wafer W2 Second wafer Wc center We Periphery

Claims

1. A substrate processing method for processing a laminated substrate in which a first substrate and a second substrate are bonded together, comprising the steps of: forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate; forming an unbonded region that weakens a bonding strength between the first substrate and the second substrate in the peripheral portion; The unbonded region is formed by irradiating the second substrate with a laser beam; forming the peripheral modified layer and the unbonded region, and then removing the peripheral portion from the peripheral modified layer; In removing the peripheral portion, an insertion member is inserted into an interface between the first substrate and the second substrate.

2. The substrate processing method according to claim 1 , wherein the peripheral modified layer is formed by irradiating the first substrate with laser light.

3. 3. The substrate processing method according to claim 1, wherein the unbonded region is formed by irradiating the laminated substrate with a laser beam from above.

4. 4. The substrate processing method according to claim 1, wherein a radially inner end of the unbonded region is located radially outward of a position where the peripheral modified layer is formed.

5. The substrate processing method according to claim 1, wherein the peripheral modified layer is formed after the unbonded region is formed.

6. 5. The substrate processing method according to claim 1, wherein the unbonded region is formed after the peripheral modified layer is formed.

7. A substrate processing system for processing a laminated substrate in which a first substrate and a second substrate are bonded together, comprising: A first modified portion that forms a peripheral modified layer along a boundary between a peripheral portion of the first substrate to be removed and a central portion of the first substrate; a second modified portion that forms an unbonded region that weakens the bonding strength between the first substrate and the second substrate in the peripheral portion; a removal section that removes the peripheral portion from the peripheral modified layer after forming the peripheral modified layer and the unbonded region; A control unit, The control unit is controlling an operation of the second modifying unit so that the laser light is irradiated from the second substrate side when forming the unbonded region; In the removal section, an insertion member is inserted into an interface between the first substrate and the second substrate when removing the peripheral portion.

8. The control unit is The substrate processing system according to claim 7 , wherein an operation of the first modifying unit is controlled so that, when the peripheral modified layer is formed, laser light is irradiated from a side of the first substrate.

9. The control unit is 9. The substrate processing system according to claim 7, wherein an operation of the second modifying unit is controlled so that, when forming the unbonded region, a laser beam is irradiated from above the laminated substrate.

10. The control unit is A substrate processing system according to any one of claims 7 to 9, wherein the operation of the first modification unit and the second modification unit is controlled so that the radially inner end of the unbonded region is positioned radially outward from the formation position of the peripheral modification layer.

11. The control unit is The substrate processing system according to any one of claims 7 to 10, wherein operations of the first modification unit and the second modification unit are controlled so that the peripheral modified layer is formed after the unbonded region is formed.

12. The control unit is The substrate processing system according to any one of claims 7 to 10, wherein operations of the first modifying section and the second modifying section are controlled so that the unbonded region is formed after the peripheral modified layer is formed.

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