Semiconductor Module

Abstract

Provided is a semiconductor module comprising: a first switching element provided on one of an upper arm and a lower arm; a second switching element provided on the other of the upper arm and the lower arm; a first diode element provided in parallel with the first switching element; a second diode element provided in parallel with the second switching element; a stacked substrate having two sides extending in a first direction and a second direction and of which the main surface is predetermined; and a gate external terminal and an auxiliary source external terminal provided on a negative side in the first direction relative to the upper arm and the lower arm and arranged in the second direction, wherein the first switching element, the second switching element, the first diode element, and the second diode element are provided on the stacked substrate, and at least one of the first switching element or the first diode element is provided facing at least one of the second switching element or the second diode element in the second direction.

Description

[Technical field]

[0001] The present invention relates to a semiconductor module. [Background technology]

[0002] 2. Description of the Related Art Semiconductor modules equipped with switching elements are known (see, for example, Patent Documents 1 to 3). Patent Document 1: International Publication No. 2015 / 136603 Patent Document 2: JP 2000-324846 A Patent Document 3: JP 2021-019094 A Problem to be Solved

[0003] It is desirable to improve the switching characteristics of semiconductor modules.

[0004] In a first aspect of the present invention, there is provided a semiconductor device including a first switching element provided in one of the upper arm or the lower arm, a second switching element provided in the other of the upper arm or the lower arm, a first diode element provided in parallel with the first switching element, a second diode element provided in parallel with the second switching element, a laminated substrate having a main surface with two sides extending in a predetermined first direction and a predetermined second direction, a gate external terminal and an auxiliary source external terminal arranged on the negative side of the upper arm and the lower arm in the first direction and arranged in the second direction; The present invention provides a semiconductor module comprising: a first switching element, a second switching element, a first diode element, and a second diode element, the first switching element, the second diode element, and the first diode element being provided on a laminated substrate; and at least one of the first switching element or the first diode element being provided opposite at least one of the second switching element or the second diode element in the second direction.

[0005] An auxiliary source wiring member connected to the source electrode of the first switching element of the semiconductor module may be physically separated from the output wiring between the drain electrode of the second switching element and the output terminal.

[0006] In the above semiconductor module, the auxiliary source wiring member of the first switching element may directly connect the source electrode of the first switching element and the auxiliary source external terminal.

[0007] The auxiliary source wiring member connected to the source electrode of the first switching element does not need to be physically separated from the output wiring between the drain electrode of the second switching element and the output terminal.

[0008] In any of the semiconductor modules described above, the auxiliary source wiring member of the first switching element may connect the source electrode of the first switching element and the auxiliary source external terminal via a conductive circuit board on which the drain electrode of the second switching element is arranged.

[0009] In any of the semiconductor modules described above, the first switching element and the second switching element may be provided facing each other in the second direction.

[0010] In any of the semiconductor modules described above, the first switching element and the first diode element may be provided facing each other in the first direction.

[0011] In any of the semiconductor modules described above, the first diode element and the second diode element may be provided facing each other in the second direction.

[0012] In any of the semiconductor modules described above, the second switching element and the second diode element may be provided in the lower arm and opposed to each other in the second direction.

[0013] In any of the semiconductor modules described above, the first switching element may be provided on the negative side of the first direction relative to the first diode element, and the second switching element may be provided on the negative side of the first direction relative to the second diode element.

[0014] In any of the above semiconductor modules, the semiconductor module may include a P-type wiring portion connected to the positive terminal. The semiconductor module may include an N-type wiring portion connected to the negative terminal. The first switching element and the second switching element may be disposed between the P-type wiring portion and the N-type wiring portion in the first direction.

[0015] In any of the semiconductor modules described above, the P-type wiring portion may be provided between the N-type wiring portion and the output terminal in the first direction.

[0016] In any of the semiconductor modules described above, the P-type wiring portion and the N-type wiring portion may have an extension portion that extends in the second direction.

[0017] In any of the semiconductor modules described above, the first diode element may be provided in an extension of the P-type wiring portion.

[0018] In any of the semiconductor modules described above, the semiconductor module may include an output terminal provided on the positive side in the first direction relative to the upper arm and the lower arm.

[0019] In any of the semiconductor modules described above, the second switching element may be provided in the lower arm and connected to the output terminal via the first diode element provided in the upper arm.

[0020] In a second aspect of the present invention, a semiconductor device includes a first switching element provided on one of the upper arm or the lower arm, a second switching element provided on the other of the upper arm or the lower arm, a first diode element provided in parallel with the first switching element, a second diode element provided in parallel with the second switching element, a laminated substrate having a main surface with two sides extending in a predetermined first direction and a predetermined second direction, a first wiring portion connected to one of the positive terminal or the negative terminal and extending in the second direction, a second wiring portion connected to the other of the positive terminal or the negative terminal and extending in the second direction, a plurality of gate external terminals provided in a first arrangement region extending in the second direction and electrically connected to a gate electrode of the first switching element or a gate electrode of the second switching element, and a first A semiconductor module is provided, the semiconductor module including: a plurality of auxiliary source external terminals arranged in an arrangement region and electrically connected to a source electrode of a first switching element or a source electrode of a second switching element; a first gate wiring member connecting a gate electrode of the first switching element to a corresponding gate external terminal among the plurality of gate external terminals; a first auxiliary source wiring member connecting a source electrode of the first switching element to a corresponding auxiliary source external terminal among the plurality of auxiliary source external terminals; a second gate wiring member connecting a gate electrode of the second switching element to a corresponding gate external terminal among the plurality of gate external terminals; and a second auxiliary source wiring member connecting a source electrode of the second switching element to a corresponding auxiliary source external terminal among the plurality of auxiliary source external terminals. The first switching element and the second switching element may be arranged opposite each other in a second direction. The first switching element and the second switching element may be arranged on either side of the first arrangement region and a second wiring portion.

[0021] In any of the above semiconductor modules, the semiconductor module may include an output terminal provided in a second arrangement region extending in the second direction. The first switching element and the second switching element may be provided on either side of the second arrangement region and the first wiring portion.

[0022] In any of the above semiconductor modules, the semiconductor module may include three legs each formed by an upper arm and a lower arm.

[0023] In any of the semiconductor modules described above, the positive electrode terminal and the negative electrode terminal may be provided in a third arrangement region arranged alongside the three legs in the second direction.

[0024] In any of the semiconductor modules described above, the upper arms of each of the three legs may be connected to the output terminal by wire members that extend beyond the first wiring portion.

[0025] In any of the semiconductor modules described above, the first switching element and the second switching element may be disposed between the first wiring portion and the second wiring portion in the first direction.

[0026] In any of the semiconductor modules described above, the first wiring portion may be a P-type wiring portion connected to the positive electrode terminal, and the second wiring portion may be an N-type wiring portion connected to the negative electrode terminal.

[0027] In any of the above semiconductor modules, the semiconductor module may include a first circuit plate for forming the upper arm and a second circuit plate for forming the lower arm. The first diode element may be mounted on the first circuit plate. The second diode element may be mounted on the second circuit plate.

[0028] In any of the above semiconductor modules, the semiconductor module may include a first circuit plate for forming the upper arm and a second circuit plate for forming the lower arm. The first diode element may be mounted on the first wiring portion. The second diode element may be mounted on the second circuit plate.

[0029] In any of the semiconductor modules described above, the gate electrode of the first switching element may be provided opposite to the gate electrode of the second switching element in the second direction.

[0030] In any of the semiconductor modules described above, a connection point between the first auxiliary source wiring member and the source electrode of the first switching element may face a connection point between the second auxiliary source wiring member and the source electrode of the second switching element in the second direction.

[0031] In any of the semiconductor modules described above, the first diode element may be provided so as to sandwich the first switching element between the second wiring section and the first diode element, and the second diode element may be provided so as to sandwich the second switching element between the second wiring section and the second diode element.

[0032] In any of the above semiconductor modules, the first switching element and the first diode element may be arranged in the upper arm, and the second switching element and the second diode element may be arranged in the lower arm.

[0033] In any of the semiconductor modules described above, the semiconductor module may include a gate external terminal and an auxiliary source external terminal that are provided on the negative side of the upper arm and the lower arm in the first direction and that are arranged in the second direction.

[0034] In any of the above semiconductor modules, the semiconductor module may include a plurality of upper arms and a plurality of lower arms. The switching elements of the upper arms and the switching elements of the lower arms may be arranged alternately in the second direction.

[0035] In any one of the semiconductor modules described above, the first switching element and the second switching element may be SiC-MOS.The first diode element and the second diode element may be SiC-SBD.

[0036] The above summary of the invention does not list all of the features of the present invention. Also, subcombinations of these features may also be inventions. [Brief description of the drawings]

[0037] [Figure 1A]1 shows an outline of the configuration of a semiconductor module 100. [Figure 1B] 1 is an example of an enlarged view of a semiconductor assembly 160. FIG. [Figure 1C] 1C shows an example of a cross section taken along line aa' of the semiconductor assembly 160 shown in FIG. 1B. [Figure 1D] 1 is a main circuit diagram of a semiconductor module 100 according to an embodiment. [Diagram 2] 2 shows current-voltage characteristics during switching of the semiconductor module 100. [Figure 3A] 3 is a circuit diagram showing the on state of the switching element 10 arranged in the upper arm 102 at time T1 in FIG. 2. FIG. [Figure 3B] 3 is a circuit diagram showing an OFF state of the switching element 10 arranged in the upper arm 102 at time T2 in FIG. 2. FIG. [Figure 3C] 3 is a circuit diagram showing the on state of the switching element 10 arranged in the upper arm 102 at time T3 in FIG. 2. FIG. [Figure 3D] 1 is a top view of an example of a semiconductor assembly 160 in which a reverse recovery current Irr flows through a lower arm 104 when an upper arm 102 is turned on. [Figure 4A] 3 is a circuit diagram showing an on-state of a switching element 20 arranged in a lower arm 104 at time T1 in FIG. 2. FIG. [Figure 4B] 3 is a circuit diagram showing an OFF state of the switching element 20 arranged in the lower arm 104 at time T2 in FIG. 2. FIG. [Figure 4C] 3 is a circuit diagram showing the ON state of the switching element 20 arranged in the lower arm 104 from time T2 to time T3 in FIG. 2. FIG. [Figure 4D] 1 is an example of a top view of a semiconductor assembly 160 in which a reverse recovery current Irr flows through an upper arm 102 when a lower arm 104 is turned on. [Figure 5A] 1 is an enlarged view of a modified example of the semiconductor assembly 160. FIG. [Figure 5B] 1 is an enlarged view of a modified example of the semiconductor assembly 160. FIG. [Figure 6A]1 is an enlarged view of a modified example of the semiconductor assembly 160. FIG. [Figure 6B] 1 is an enlarged view of a modified example of the semiconductor assembly 160. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0038] The present invention will be described below through embodiments of the invention, but the following embodiments do not limit the scope of the invention according to the claims. Furthermore, not all of the combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0039] 1A shows an outline of the configuration of a semiconductor module 100. The semiconductor module 100 includes a plurality of semiconductor assemblies 160. The semiconductor module 100 of this example includes, but is not limited to, three semiconductor assemblies 160a to 160c. The semiconductor module 100 of this example includes, as external terminals, an output terminal 110, a positive terminal 132, a negative terminal 134, a gate external terminal 112, an auxiliary source external terminal 114, a gate external terminal 122, and an auxiliary source external terminal 124.

[0040] The semiconductor module 100 may be applied to a power conversion device such as a power module that configures an inverter circuit. For example, when the semiconductor module 100 configures a three-phase inverter circuit, the semiconductor assemblies 160a to 160c may correspond to the U-phase, V-phase, and W-phase of the three-phase inverter circuit, respectively.

[0041] The semiconductor assembly 160 has a laminated substrate 150. The laminated substrate 150 is provided with an upper arm 102, a lower arm 104, a P-type wiring portion 106, and an N-type wiring portion 108. The semiconductor assembly 160 is housed in a housing 170 of the semiconductor module 100. The semiconductor assembly 160 may be sealed in the housing 170 with any sealing resin material.

[0042] The laminated substrate 150 is mounted with a switching element and a diode element, which will be described later. The main surface of the laminated substrate 150 has two sides extending in a predetermined first direction (e.g., the X-axis direction) and a second direction (e.g., the Y-axis direction). That is, the laminated substrate 150 of this example has a main surface in an XY plane. In this example, the first direction is the X-axis direction and the second direction is the Y-axis direction, but this is not limiting.

[0043] The laminated substrate 150 may be a DCB (Direct Copper Bonding) substrate or an AMB (Active Metal Brazing) substrate. The semiconductor module 100 of this example includes three laminated substrates 150a to 150c arranged in the Y-axis direction, but the number and arrangement of the laminated substrates 150 are not limited to this.

[0044] The semiconductor module 100 includes a plurality of legs, each of which is configured with an upper arm 102 and a lower arm 104. The semiconductor module 100 of this example includes three legs, but is not limited to this. The plurality of legs are disposed on the laminated substrates 150a, 150b, and 150c, respectively. The upper arms 102a to 102c are provided on the laminated substrates 150a to 150c, respectively. The lower arms 104a to 104c are provided on the laminated substrates 150a to 150c, respectively. The plurality of legs may be mounted on a common laminated substrate 150.

[0045] The output terminal 110 is an external terminal for electrically connecting to a load provided outside the semiconductor module 100. The output terminal 110 in this example has three external terminals, an output terminal 110U, an output terminal 110V, and an output terminal 110W, corresponding to the U-phase to the W-phase, respectively. The output terminal 110 is provided on a predetermined side of the semiconductor module 100. The output terminal 110 in this example is provided on a side extending in the Y-axis direction on the positive side in the X-axis direction among the four sides of the semiconductor module 100. That is, the output terminal 110 is provided on the positive side in the X-axis direction relative to the upper arm 102 and the lower arm 104. The output terminal 110 in this example is provided in a second arrangement region 182 extending in the Y-axis direction. The multiple output terminals 110 are arranged in the second arrangement region 182 in the Y-axis direction.

[0046] The three output terminals 110U to 110W are arranged in the Y-axis direction so as to face the laminated substrates 150a to 150c, respectively. Note that the number and arrangement of the output terminals 110 are not limited to this.

[0047] The gate external terminal 112, the auxiliary source external terminal 114, the gate external terminal 122, and the auxiliary source external terminal 124 are examples of control terminals for controlling the operation of the semiconductor module 100. The control terminals in this example are provided on a side opposite to the side on which the output terminal 110 is provided. The control terminals in this example are provided on a side extending in the Y-axis direction on the negative side of the X-axis direction of the semiconductor module 100. In other words, the gate external terminal 112, the auxiliary source external terminal 114, and the gate external terminal 122 and auxiliary source external terminal 124 is provided on the negative side in the X-axis direction relative to upper arm 102 and lower arm 104.

[0048] The gate external terminal 112 has three gate external terminals 112a to 112c corresponding to the laminated substrates 150a to 150c. The auxiliary source external terminal 114 has three auxiliary source external terminals 114a to 114c corresponding to the laminated substrates 150a to 150c. The multiple gate external terminals 112 in this example are provided in a first arrangement region 181 extending in the Y-axis direction. The multiple auxiliary source external terminals 114 in this example are provided in the first arrangement region 181 extending in the Y-axis direction.

[0049] Similarly, the gate external terminal 122 has three gate external terminals 122a to 122c corresponding to the laminated substrates 150a to 150c. The auxiliary source external terminal 124 has three auxiliary source external terminals 124a to 124c corresponding to the laminated substrates 150a to 150c. The multiple gate external terminals 122 in this example are provided in a first arrangement region 181 extending in the Y-axis direction. The multiple auxiliary source external terminals 124 in this example are provided in the first arrangement region 181 extending in the Y-axis direction.

[0050] The positive electrode terminal 132 and the negative electrode terminal 134 are provided on a predetermined side of the semiconductor module 100. The positive electrode terminal 132 and the negative electrode terminal 134 of this example are provided on a side perpendicular to the side on which the output terminal 110 is provided. The positive electrode terminal 132 and the negative electrode terminal 134 may be provided on a side perpendicular to the side on which the control terminals such as the gate external terminal 112 are provided. The positive electrode terminal 132 and the negative electrode terminal 134 of this example are provided on a side extending in the X-axis direction on the positive side of the Y-axis direction of the semiconductor module 100. However, the positive electrode terminal 132 and the negative electrode terminal 134 may be provided on a side extending in the X-axis direction on the negative side of the Y-axis direction. The positive electrode terminal 132 and the negative electrode terminal 134 of this example are provided in a third arrangement region 183 extending in the X-axis direction. The third arrangement region 183 may be arranged alongside the multiple legs in the Y-axis direction. That is, the third arrangement region 183 may be provided opposite the multiple legs in the Y-axis direction. The positive electrode terminals 132 and the negative electrode terminals 134 are arranged in the third arrangement region 183 in the X-axis direction.

[0051] The P-type wiring section 106 is an example of the first wiring section or the second wiring section. The N-type wiring section 108 is an example of the first wiring section or the second wiring section. The first wiring section is connected to one of the positive electrode terminal 132 or the negative electrode terminal 134 and extends in the Y-axis direction. The second wiring section is connected to the other of the positive electrode terminal 132 or the negative electrode terminal 134 and extends in the Y-axis direction. In this example, the P-type wiring section 106 is described as the first wiring section, and the N-type wiring section 108 is described as the second wiring section, but is not limited thereto. The positions of the P-type wiring section 106 and the N-type wiring section 108 may be appropriately interchanged.

[0052] The P-type wiring portion 106 is connected to the positive electrode terminal 132. The N-type wiring portion 108 is connected to the negative electrode terminal 134. The P-type wiring portion 106 and the N-type wiring portion 108 are provided extending in the Y-axis direction. The P-type wiring portion 106 and the N-type wiring portion 108 are provided sandwiching the upper arm 102 and the lower arm 104 in the X-axis direction. The P-type wiring portion 106 is provided on the positive side of the N-type wiring portion 108 in the X-axis direction. In other words, the P-type wiring portion 106 is provided between the N-type wiring portion 108 and the output terminal 110 in the X-axis direction. The upper arms 102 of the multiple legs may be connected to the output terminal 110 by wire members over the P-type wiring portion 106.

[0053] The semiconductor module 100 includes a plurality of upper arms 102 and a plurality of lower arms 104. The plurality of upper arms 102 and the plurality of lower arms 104 are arranged alternately in the Y-axis direction. As a result, the switching elements 10 of the upper arms 102 and the switching elements 20 of the lower arms 104 are arranged alternately in the Y-axis direction. The switching elements 10 and the switching elements 20 will be described later.

[0054] 1B is an example of an enlarged view of a semiconductor assembly 160. The semiconductor module 100 may include a plurality of semiconductor assemblies 160 having the same configuration as in this example. Note that in this example, the configuration of the semiconductor assembly 160 is shown typically, and the shape of each component is not limited to this example. The semiconductor assembly 160 includes a switching element 10, a diode element 15, a switching element 20, a diode element 25, and a laminated substrate 150.

[0055] The switching element 10 and the switching element 20 are switching elements provided on the laminated substrate 150. The switching element 10 is an example of a first switching element provided on one of the upper arm 102 or the lower arm 104. The switching element 20 is an example of a second switching element provided on the other of the upper arm 102 or the lower arm 104. In this example, a case where the switching element 10 is arranged on the upper arm 102 and the switching element 20 is arranged on the lower arm 104 will be described, but the switching element 10 may be arranged on the lower arm 104 and the switching element 20 may be arranged on the upper arm 102. The switching element 10 and the switching element 20 may be SiC-MOS or other switching elements such as insulated gate bipolar transistors (IGBTs).

[0056] The switching element 10 has a gate electrode 11 and a source electrode 13 as front surface electrodes, and a drain electrode as a back surface electrode. The gate electrode 11 is connected to a gate external terminal 112 by a gate wiring member 12. The gate wiring member 12 is an example of a first gate wiring member that connects the gate electrode 11 of the switching element 10 to a corresponding one of the multiple gate external terminals 112. The source electrode 13 is connected to an auxiliary source external terminal 114 by an auxiliary source wiring member 14. The auxiliary source wiring member 14 is an example of a first auxiliary source wiring member that connects the source electrode 13 of the switching element 10 to a corresponding one of the multiple auxiliary source external terminals 114. The source electrode 13 is connected to a circuit board 32 by a wire member W1. The drain electrode of the switching element 10 is electrically connected to a circuit board 31 by solder or the like.

[0057] The switching element 20 has a gate electrode 21 and a source electrode 23 as front surface electrodes, and a drain electrode as a back surface electrode. The gate electrode 21 is connected to a gate external terminal 122 by a gate wiring member 22. The gate wiring member 22 is an example of a second gate wiring member that connects the gate electrode 21 of the switching element 20 to a corresponding one of the multiple gate external terminals 122. The source electrode 23 is connected to an auxiliary source external terminal 124 by an auxiliary source wiring member 24. The auxiliary source wiring member 24 connects the source electrode 23 of the switching element 20 to a corresponding one of the multiple auxiliary source external terminals 124. External terminal 124 3. The source electrode 23 is connected to the circuit board 38 by a wire member W4, and is connected to the anode electrode 26 by a wire member W5. The drain electrode of the switching element 20 is electrically connected to the circuit board 32 by solder or the like.

[0058] The diode element 15 is an example of a first diode element provided in parallel with the switching element 10 on the laminated substrate 150. The diode element 15 functions as a free wheel diode of the switching element 10. The diode element 15 of this example has an anode electrode 16 as a front surface electrode and a cathode electrode as a back surface electrode. The anode electrode 16 is connected to the circuit board 32 by a wire member W2. The anode electrode 16 is connected to the output terminal 110 by a wire member W3. The wire member W3 of this example connects the output terminal 110 and the diode element 15 across the P-type wiring portion 106. The cathode electrode of the diode element 15 is electrically connected to the circuit board 31 by solder or the like.

[0059] The diode element 25 is an example of a second diode element provided in parallel with the switching element 20 on the laminated substrate 150. The diode element 25 functions as a free wheel diode of the switching element 20. The diode element 25 of this example has an anode electrode 26 as a front surface electrode and a cathode electrode as a back surface electrode. The anode electrode 26 is connected to the source electrode 23 of the switching element 20 by a wire member W5. The cathode electrode of the diode element 25 is electrically connected to the circuit board 32 by solder or the like.

[0060] In this example, a case will be described in which diode element 15 is arranged in upper arm 102 and diode element 25 is arranged in lower arm 104, but diode element 15 may be arranged in lower arm 104 and diode element 25 may be arranged in upper arm 102. Diode element 15 and diode element 25 may be SiC-SBDs or free wheel diodes (FWDs) formed on a silicon substrate.

[0061] The switching element 10 and the switching element 20 are disposed between the P-type wiring portion 106 and the N-type wiring portion 108 in the X-axis direction. Similarly, the diode element 15 and the diode element 25 are disposed between the P-type wiring portion 106 and the N-type wiring portion 108 in the X-axis direction. However, the semiconductor element on the laminated substrate 150 may be provided in the P-type wiring portion 106 or the N-type wiring portion 108. The semiconductor element may refer to the switching element 10, the diode element 15, the switching element 20, or the diode element 25.

[0062] The switching element 10 and the switching element 20 are provided on either side of the second arrangement region 182 and the P-type wiring portion 106. The switching element 10 and the switching element 20 are provided on either side of the first arrangement region 181 and the N-type wiring portion 108. The diode element 15 may be provided on either side of the N-type wiring portion 108 and the switching element 10. The diode element 25 may be provided on either side of the N-type wiring portion 108 and the switching element 20.

[0063] Here, at least one of the semiconductor elements provided on the upper arm 102 is disposed opposite at least one of the semiconductor elements provided on the lower arm 104 in the Y-axis direction. For example, at least one of the switching elements 10 or the diode elements 15 is disposed opposite at least one of the switching elements 20 or the diode elements 25 in the Y-axis direction.

[0064] In this example, the switching element 10 is provided opposite the switching element 20 in the Y-axis direction. This makes the path lengths of the control currents of the switching elements 10 and 20 uniform in the semiconductor module 100, and reduces the difference in switching loss between the upper and lower arms. Even if the semiconductor module 100 has multiple legs, it is easy to equalize the switching loss between the multiple legs. For example, by providing the switching elements 10 and 20 opposite each other in the Y-axis direction, it is possible to equalize the rise time when the switching elements are turned on.

[0065] The switching element 10 and the diode element 15 are provided opposite to each other in the X-axis direction. In this example, the diode element 15 is provided opposite to the diode element 25 in the Y-axis direction. By devising the arrangement of the semiconductor elements on the laminated substrate 150 in this manner, the semiconductor module 100 can be easily miniaturized.

[0066] In addition, the semiconductor elements being disposed opposite to each other in the Y-axis direction means that at least a portion of one semiconductor element is disposed opposite to the other semiconductor element in the Y-axis direction. Also, the opposing semiconductor elements may completely overlap each other in the Y-axis direction.

[0067] The switching element 10 and the switching element 20 may be arranged so that the path length of the gate wiring member 12 and the path length of the gate wiring member 22 are approximately equal. The gate electrode 11 and the gate electrode 21 may be provided opposite to each other in the Y-axis direction. By providing the gate electrode 11 and the gate electrode 21 opposite to each other in the Y-axis direction, it becomes easier to equalize the path length to the control terminal. Furthermore, the connection point between the gate electrode 11 and the gate wiring member 12 may be provided opposite to the connection point between the gate electrode 21 and the gate wiring member 22 in the Y-axis direction. Note that, although no other element such as a semiconductor chip is provided between the gate electrode 11 and the gate electrode 21 in this example, another element may be provided between the gate electrode 11 and the gate electrode 21. The gate electrode 11 and the gate wiring member 12 are both arranged on the negative side in the X-axis direction on the upper surface of the switching element, but are not limited thereto.

[0068] Similarly, the switching element 10 and the switching element 20 may be arranged so that the path length of the auxiliary source wiring member 14 and the path length of the auxiliary source wiring member 24 are approximately equal. The source electrode 13 and the source electrode 23 may be provided opposite to each other in the Y-axis direction. By providing the source electrode 13 and the source electrode 23 opposite to each other in the Y-axis direction, it becomes easier to make the path lengths to the control terminal uniform. Furthermore, the connection point between the source electrode 13 and the auxiliary source wiring member 14 may be provided opposite to the connection point between the source electrode 23 and the auxiliary source wiring member 24 in the Y-axis direction. Note that, although no other element such as a semiconductor chip is provided between the source electrode 13 and the source electrode 23 in this example, another element may be provided between the source electrode 13 and the source electrode 23.

[0069] In the semiconductor module 100 of this embodiment, the path lengths of the gate wiring members and the auxiliary source wiring members are made uniform, thereby making the path lengths of the control current uniform and enabling switching. Loss difference between upper and lower arms By arranging the switching elements 10 and 20 closer to the first arrangement region 181 than the diode elements 15 and 25, the path length of the control current can be shortened and the control current can be made more uniform.

[0070] The gate wiring member 12 is electrically connected to the gate electrode 11 of the switching element 10. In this example, the gate wiring member 12 directly connects the gate electrode 11 and the gate external terminal 112 via a wire member. A gate current Ig flows through the gate wiring member 12 from the gate external terminal 112 to the switching element 10. The gate wiring member 12 may be formed by combining a wire member and a circuit board 152 described later.

[0071] The auxiliary source wiring member 14 is connected to the source electrode 13 of the switching element 10. The auxiliary source wiring member 14 of this example directly connects the source electrode 13 and the auxiliary source external terminal 114. An auxiliary source current Is flows through the auxiliary source wiring member 14 from the switching element 10 to the auxiliary source external terminal 114. The auxiliary source current Is is a current that returns from the switching element 10 to the control terminal in response to a gate current Ig flowing from the control terminal to the switching element 10. The auxiliary source wiring member 14 may be formed by a combination of a wire member and a circuit board 152 described later.

[0072] The circuit board 31 is a circuit board 152 on which the switching element 10 and the diode element 15 are mounted. That is, the circuit board 31 of this example is used to configure the upper arm 102. The circuit board 31 is electrically connected to the back electrodes of the switching element 10 and the diode element 15 using a conductive fixing member such as solder. The circuit board 31 may be electrically connected to the positive terminal 132. The circuit board 31 is provided between the P-type wiring portion 106 and the N-type wiring portion 108 in the X-axis direction. The circuit board 31 of this example is provided in connection with the circuit board 36 of the P-type wiring portion 106, but may be provided physically separated from the circuit board 36.

[0073] The circuit board 32 is a circuit board 152 on which the switching element 20 and the diode element 25 are mounted. That is, the circuit board 32 in this example is used to configure the lower arm 104. The circuit board 32 is provided physically separated from the circuit board 31. The circuit board 32 is electrically connected to the back electrodes of the switching element 20 and the diode element 25 using a conductive fixing member such as solder. The circuit board 32 is provided between the P-type wiring portion 106 and the N-type wiring portion 108 in the X-axis direction. The circuit board 32 is provided on the negative side of the circuit board 31 in the Y-axis direction.

[0074] The gate external terminal 112 is connected to the gate electrode 11 of the switching element 10 via the gate wiring member 12. The auxiliary source external terminal 114 is connected to the source electrode 13 of the switching element 10 via the auxiliary source wiring member 14. The gate external terminal 112 and the auxiliary source external terminal 114 are arranged in the Y-axis direction. The gate external terminal 112 is provided on the positive side in the Y-axis direction of the auxiliary source external terminal 114, but is not limited to this.

[0075] The gate external terminal 122 is connected to the gate electrode 21 of the switching element 20 via the gate wiring member 22. The auxiliary source external terminal 124 is connected to the source electrode 23 of the switching element 20 via the auxiliary source wiring member 24. The gate external terminal 122 and the auxiliary source external terminal 124 are arranged in the Y-axis direction. The gate external terminal 122 is provided on the positive side in the Y-axis direction of the auxiliary source external terminal 124, but is not limited to this.

[0076] The control terminals in this example are arranged in the order of the gate external terminal 112, the auxiliary source external terminal 114, the gate external terminal 122, and the auxiliary source external terminal 124 toward the negative side in the Y-axis direction. That is, the gates and sources of the control terminals in this example are arranged in the order of GSGS (where G is gate and S is source). However, the gates and sources of the control terminals may be arranged in a different order, such as SGSG. The control terminals may be arranged in the order of the auxiliary source external terminal 114, the gate external terminal 112, the auxiliary source external terminal 124, and the gate external terminal 122 toward the negative side in the Y-axis direction. By arranging the control terminals in a single row, the degree of freedom in wiring can be improved.

[0077] The switching element 10 may be disposed closer to the control terminal than the diode element 15. The switching element 10 of this example is provided on the negative side in the X-axis direction than the diode element 15. That is, the switching element 10 is provided between the diode element 15 and the control terminal (for example, the gate external terminal 112 and the auxiliary source external terminal 114) in the X-axis direction. The switching element 10 is also provided between the diode element 15 and the N-type wiring portion 108 in the X-axis direction. The switching element 10 may have a gate electrode 11 at a position close to the gate external terminal 112 on the chip.

[0078] Similarly, the switching element 20 may be disposed closer to the control terminal than the diode element 25. The switching element 20 in this example is provided on the negative side in the X-axis direction than the diode element 25. That is, the switching element 20 is provided between the diode element 25 and the control terminal (for example, the gate external terminal 122 and the auxiliary source external terminal 124) in the X-axis direction. The switching element 20 is also provided between the diode element 25 and the N-type wiring portion 108 in the X-axis direction. The switching element 20 may have a gate electrode 21 at a position close to the gate external terminal 122 on the chip.

[0079] The circuit board 36 is a circuit board 152 provided in the P-type wiring portion 106. The circuit board 36 in this example is an example of an extension portion provided by extending in the Y-axis direction. The circuit board 36 in this example is connected to the circuit board 31. The circuit board 36 may be electrically connected to the positive electrode terminal 132 by a wire member. The adjacent legs may be directly connected to each other by the circuit boards 36, or may be connected to each other by a wire member.

[0080] The circuit board 38 is a circuit board 152 provided in the N-type wiring portion 108. The circuit board 38 in this example is an example of an extension portion provided by extending in the Y-axis direction. The circuit board 38 is electrically connected to the source electrode 23 by a wire member W4. The circuit board 38 may be electrically connected to the negative electrode terminal 134 by a wire member. The adjacent legs may be directly connected to each other by the circuit boards 38, or may be connected to each other by a wire member.

[0081] Here, the auxiliary source wiring member 14 in this example is physically separated from the output wiring between the drain electrode of the switching element 20 and the output terminal 110. The output wiring may be a region at the same potential as the output terminal 110. The output wiring may include a wire member W3 connected to the output terminal 110, and may include a circuit board 32 on which the switching element 20 is arranged. By physically separating the auxiliary source wiring member 14 from the output wiring, it is possible to avoid the influence of the reverse recovery current Irr flowing through the output wiring.

[0082] The reverse recovery current Irr is a current generated in an opposing arm when a switching element of the semiconductor module 100 is turned on. For example, the reverse recovery current Irr is a current that flows through the opposing switching element 20 when the switching element 10 is turned on. The reverse recovery current Irr will be described later.

[0083] In the semiconductor module 100 of this embodiment, the auxiliary source wiring member 14 is physically separated from the region through which the reverse recovery current Irr flows when the upper arm 102 is switched, thereby reducing the effect of the reverse recovery current Irr on the auxiliary source current Is flowing through the auxiliary source wiring member 14. Specifically, it is possible to suppress a decrease in switching speed at turn-on caused by the reverse recovery current Irr flowing in the opposite direction to the auxiliary source current Is. This makes it possible to reduce the turn-on loss of the upper arm 102.

[0084] Furthermore, the semiconductor module 100 of this example can reduce the difference in switching loss between the upper and lower arms by uniforming the lengths of the auxiliary source wiring members 14 and 24 through the ingenious arrangement of the semiconductor elements. For example, the semiconductor module 100 can uniform the switching speed of the upper and lower arms by arranging the switching elements 10 and 20 to face each other in the Y-axis direction.

[0085] 1C shows an example of a-a' cross section of the semiconductor assembly 160 shown in FIG.

[0086] The insulating plate 151 has an arbitrary thickness in the Z-axis direction and is formed of a flat insulating material having an upper surface and a lower surface. The main surface of the laminated substrate 150 may be the upper surface of the insulating plate 151. The insulating plate 151 may be formed of a ceramic material such as alumina (Al2O3), aluminum nitride (AlN) or silicon nitride (Si3N4). The insulating plate 151 may be formed of a resin material such as epoxy, or an epoxy resin material using a ceramic material as a filler.

[0087] The circuit board 152 has an arbitrary thickness in the Z-axis direction and is a conductive member provided on the upper surface of the insulating plate 151. The metal plate 153 has an arbitrary thickness in the Z-axis direction and is a conductive member provided on the lower surface of the insulating plate 151. The circuit board 152 and the metal plate 153 may be formed of a plate containing a metal material such as copper or a copper alloy. The circuit board 152 and the metal plate 153 may be fixed to the insulating plate 151 by solder, brazing, or the like. The metal plate 153 may be formed of a thermally conductive material such as copper or aluminum, and may function as a heat sink.

[0088] 1D is a main circuit diagram of a semiconductor module 100 according to an embodiment. For example, the semiconductor module 100 functions as a part of an in-vehicle unit that drives a motor of a vehicle. The semiconductor module 100 of this example is composed of three legs, a leg U-INV, a leg V-INV, and a leg W-INV. Each switching element may be alternately switched by a signal input to a control terminal of the semiconductor module 100 to function as a three-phase AC inverter circuit.

[0089] The leg U-INV is composed of a pair of a switching element 10U and a diode element 15U, and a pair of a switching element 20U and a diode element 25U. The leg V-INV is composed of a pair of a switching element 10V and a diode element 15V, and a pair of a switching element 20V and a diode element 25V. The leg W-INV is composed of a pair of a switching element 10W and a diode element 15W, and a pair of a switching element 20W and a diode element 25W.

[0090] The upper arm 102 is composed of three switching elements 10U to 10W and three diode elements 15U to 15W. The lower arm 104 is composed of three switching elements 20U to 20W and three diode elements 25U to 25W.

[0091] Drain electrodes of switching element 10U, switching element 10V, and switching element 10W are each electrically connected to positive terminal 132. Similarly, cathode electrodes of diode element 15U, diode element 15V, and diode element 15W are each electrically connected to positive terminal 132.

[0092] In addition, source electrodes of switching element 10U, switching element 10V, and switching element 10W are electrically connected to output terminal 110U, output terminal 110V, and output terminal 110W, respectively. Similarly, anode electrodes of diode element 15U, diode element 15V, and diode element 15W are electrically connected to output terminal 110U, output terminal 110V, and output terminal 110W, respectively.

[0093] Source electrodes of switching element 20U, switching element 20V, and switching element 20W are each electrically connected to negative terminal 134. Similarly, anode electrodes of diode element 25U, diode element 25V, and diode element 25W are each electrically connected to negative terminal 134.

[0094] Drain electrodes of switching element 20U, switching element 20V, and switching element 20W are electrically connected to output terminal 110U, output terminal 110V, and output terminal 110W, respectively. Similarly, cathode electrodes of diode element 25U, diode element 25V, and diode element 25W are electrically connected to output terminal 110U, output terminal 110V, and output terminal 110W, respectively.

[0095] 2 shows the current-voltage characteristics during switching of the semiconductor module 100. This figure shows the gate voltage VG, the drain-source voltage VDS, and the drain current Id of the switching element 10. This figure also shows the anode-cathode voltage VAK and the forward current IF of the diode element 25.

[0096] The circuit states corresponding to times T1 to T3 will be described later. Between times T2 and T3, when a gate current Ig is supplied and the switching element 10 is turned on, a reverse recovery current Irr flows in the opposing arm of the switching element 10.

[0097] Fig. 3A is a circuit diagram at time T1 in Fig. 2, showing the on state of the switching element 10 arranged in the upper arm 102. When the switching element 10 is turned on by the drive unit 210, a drain current Id flows to the load 200 at a constant di / dt via an inductance. Here, since the relationship ΔV=LdId / dt holds, dId / dt=ΔV / L=constant.

[0098] 3B is a circuit diagram at time T2 in FIG. 2, showing the off state of the switching element 10 arranged in the upper arm 102. When the switching element 10 is turned off, the inductance causes a current to flow in a direction that prevents a current change. Then, a loop current flows through the diode element 25 arranged in the lower arm 104. When the switching element 10 arranged in the upper arm 102 is in the off state, the switching element 20 arranged in the lower arm 104 is turned on except during the dead time period, but no current flows through the switching element 20 due to the influence of the loop current.

[0099] 3C is a circuit diagram showing the ON state of the switching element 10 arranged in the upper arm 102 from time T2 to time T3 in FIG. 2. The driving unit 210 of this example supplies a gate current Ig to the gate of the switching element 10 arranged in the upper arm 102. This turns on the switching element 10, and a current obtained by adding the drain current Id from the switching element 10 to the loop current flows to the load 200. A reverse recovery current Irr is generated in the diode element 25 arranged in the lower arm 104.

[0100] 3D is an example of a top view of a semiconductor assembly 160 in which a reverse recovery current Irr flows in the lower arm 104 when the upper arm 102 is turned on. The semiconductor assembly 160 of this example is the same as the semiconductor assembly 160 shown in FIG. 1B. In this figure, the broken lines indicate paths through which the gate current Ig, the auxiliary source current Is, and the reverse recovery current Irr flow. In this example, the gate current Ig flows in the gate wiring member 12, and the auxiliary source current Is flows in the auxiliary source wiring member 14. The reverse recovery current Irr flows from the output terminal 110 through the wire members W3 and W2, and from the diode element 25 through the wire members W5 and W4 to the N-type wiring portion 108.

[0101] In this embodiment, the gate current Ig and the auxiliary source current Is pass through a different path from the reverse recovery current Irr, thereby avoiding the influence of the reverse recovery current Irr. The gate wiring member 12 and the auxiliary source wiring member 14 in this embodiment are physically separated from the wire members W5, W4, and N-type wiring portion 108 through which the reverse recovery current Irr flows. This makes it possible to reduce the switching loss of the semiconductor module 100.

[0102] In addition, the path through which the gate current Ig and the auxiliary source current Is flow is arranged so as not to be parallel to the path through which the reverse recovery current Irr flows. The wire member W4 through which the reverse recovery current Irr flows may be wired diagonally with respect to the X-axis direction. The wire member W5 may be arranged so as not to face the gate wiring member 12 and the auxiliary source wiring member 14 in the Y-axis direction, although it is provided substantially parallel to the X-axis direction. In this way, by devising the current paths through which the gate current Ig, the auxiliary source current Is, and the reverse recovery current Irr flow, it is expected that the flow of the gate current Ig and the auxiliary source current Is is prevented from being hindered by the induced magnetic field of the reverse recovery current Irr. This is expected to reduce switching loss and make it easier to average the on-time.

[0103] Fig. 4A is a circuit diagram at time T1 in Fig. 2, showing the on state of the switching element 20 arranged in the lower arm 104. That is, Fig. 3A and Fig. 4A differ in that the upper arm 102 or the lower arm 104 is made conductive. In this example, when the switching element 20 is turned on by the drive unit 210, a drain current Id flows to the load 200 at a constant di / dt via an inductance. Here, since the relationship ΔV=LdId / dt holds, dId / dt=ΔV / L=constant.

[0104] 4B is a circuit diagram at time T2 in FIG. 2, showing the off state of the switching element 20 arranged in the lower arm 104. When the switching element 20 is turned off, the inductance causes a current to flow in a direction that prevents a current change. Then, a loop current flows through the diode element 15 arranged in the upper arm 102. When the switching element 20 arranged in the lower arm 104 is in the off state, the switching element 10 arranged in the upper arm 102 is turned on except during the dead time period, but no current flows through the switching element 10 due to the influence of the loop current.

[0105] 4C is a circuit diagram showing the ON state of the switching element 20 arranged in the lower arm 104 from time T2 to time T3 in FIG. 2. The drive unit 210 of this example supplies a gate current Ig to the switching element 20 arranged in the lower arm 104. This turns on the switching element 20, and a current obtained by adding the drain current Id from the switching element 20 to the loop current flows to the load 200. Then, a reverse recovery current Irr is generated in the diode element 15 arranged in the upper arm 102.

[0106] 4D is an example of a top view of a semiconductor assembly 160 in which a reverse recovery current Irr flows in the upper arm 102 when the lower arm 104 is turned on. The semiconductor assembly 160 of this example is the same as the semiconductor assembly 160 shown in FIG. 1B. In this figure, the broken lines indicate paths through which the gate current Ig, the auxiliary source current Is, and the reverse recovery current Irr flow. In this example, the gate current Ig flows in the gate wiring member 22, and the auxiliary source current Is flows in the auxiliary source wiring member 24. The reverse recovery current Irr flows to the output terminal 110 through the circuit board 36, the diode element 15, and the wire member W3.

[0107] In this example, the gate current Ig and the auxiliary source current Is pass through a different path from the reverse recovery current Irr, as in the case of FIG. 3D, and are thus free from the influence of the reverse recovery current Irr. The gate wiring member 22 and the auxiliary source wiring member 24 in this example are physically separated from the wire members W2 and W3 through which the reverse recovery current Irr flows. This allows the switching loss of the semiconductor module 100 to be reduced.

[0108] In addition, the path through which the gate current Ig and the auxiliary source current Is flow is arranged so as not to be parallel to the path through which the reverse recovery current Irr flows. The wire member W2 through which the reverse recovery current Irr flows may be wired substantially parallel to the Y-axis direction so as not to be parallel to the gate wiring member 22 and the auxiliary source wiring member 24. The wire member W3 is provided obliquely with respect to the X-axis direction. In this way, by devising the current paths through which the gate current Ig, the auxiliary source current Is, and the reverse recovery current Irr flow, it is expected that the flow of the gate current Ig and the auxiliary source current Is is prevented from being impeded by the induced magnetic field of the reverse recovery current Irr. This is expected to reduce switching loss and make it easier to average the on-time.

[0109] Fig. 5A is an enlarged view of a modified example of the semiconductor assembly 160. In the semiconductor assembly 160 of this example, the auxiliary source wiring member 14 and the auxiliary source external terminal 114 are connected by a connection method different from that of the embodiment of Fig. 1B. In this example, the differences from the embodiment of Fig. 1B will be particularly described.

[0110] The auxiliary source wiring member 14 includes a wire member W6, a circuit board 33, and a wire member W7. The wire member W6 connects the source electrode 13 and the circuit board 33. The wire member W7 connects the circuit board 33 and the auxiliary source external terminal 114. The circuit board 33 is an example of a circuit board 152 provided on the laminated substrate 150.

[0111] The auxiliary source wiring member 14 is physically separated from the output wiring between the drain electrode of the switching element 20 and the output terminal 110. That is, the circuit board 33 of this example is provided physically separated from the circuit board 32 in the laminated substrate 150. In this manner, the circuit boards 32 and 33 are arranged so that the path through which the auxiliary source current Is flows does not overlap with the path through which the current flows in the output wiring. This makes it possible to avoid the influence of the reverse recovery current Irr flowing in the circuit board 32 on the auxiliary source wiring member 14.

[0112] Fig. 5B is an enlarged view of a modified example of semiconductor assembly 160. Semiconductor assembly 160 of this example differs from the embodiment of Fig. 5A in that circuit board 33 is physically connected to circuit board 32. In this example, the differences from the embodiment of Fig. 5A will be particularly described.

[0113] The auxiliary source wiring member 14 is not physically separated from the output wiring between the drain electrode of the switching element 20 and the output terminal 110. That is, the auxiliary source wiring member 14 of this example connects the source electrode 13 and the auxiliary source external terminal 114 via a circuit board 152 on which the drain electrode of the switching element 20 is arranged. Specifically, the auxiliary source wiring member 14 connects the source electrode 13 and the auxiliary source external terminal 114 via a circuit board 33 formed integrally with a circuit board 32 on which the drain electrode of the switching element 20 is arranged.

[0114] Thus, the circuit board 33 of this example is formed integrally with the circuit board 32 in the laminated substrate 150, and is not physically separated from the circuit board 32. However, the auxiliary source wiring member 14 is arranged so that the auxiliary source current Is is not affected by the current flowing in the output wiring. In other words, the circuit board 33 is provided at a position different from the main path of the current flowing from the drain electrode of the switching element 20 to the output terminal 110. Furthermore, the circuit boards 32 and 33 may be arranged so that the path through which the auxiliary source current Is flows does not overlap with the path of the current flowing in the output wiring.

[0115] For example, circuit board 33 is provided to protrude from circuit board 32. The area of ​​circuit board 33 may be smaller than the area of ​​circuit board 32. Circuit board 33 may be provided between switching element 10 and switching element 20 in the Y-axis direction. Circuit board 33 may be provided in a region other than the region connecting the drain electrode of switching element 20 and output terminal 110 in the XY plane.

[0116] Fig. 6A is an enlarged view of a modified example of the semiconductor assembly 160. In the semiconductor assembly 160 of this example, the diode element 15 is disposed at a position different from that of the embodiment of Fig. 1B. The diode element 15 of this example is mounted on the P-type wiring portion 106, which is the first wiring portion. In this example, the differences from the embodiment of Fig. 1B will be particularly described.

[0117] The diode element 15 is provided on the circuit board 36 of the P-type wiring portion 106. The diode element 15 of this example is provided on an extension of the P-type wiring portion 106 in the upper arm 102. The output terminal 110 is electrically connected to the circuit board 32 of the lower arm 104 via the diode element 15. The output terminal 110 is connected to the anode electrode 16 of the diode element 15 by a wire member W3. The anode electrode 16 is connected to the circuit board 32 by a wire member W2. In this manner, the diode element 25 is provided in the lower arm 104, and is connected to the output terminal 110 via the diode element 15 provided in the upper arm 102.

[0118] Fig. 6B is an enlarged view of a modified example of the semiconductor assembly 160. In the semiconductor assembly 160 of this example, the diode element 25 is disposed at a position different from that of the embodiment of Fig. 1B. In this example, the differences from the embodiment of Fig. 1B will be particularly described.

[0119] The switching element 20 and the diode element 25 are provided on the lower arm 104, facing each other in the Y-axis direction. In this example, the diode element 25 is provided on the negative side in the Y-axis direction of the switching element 20. The diode element 25 is connected to the circuit board 38 of the N-type wiring portion 108 by a wire member W5 that connects the anode electrode 26 and the circuit board 38.

[0120] In this way, the positions at which the switching elements and the diode elements are provided may be changed as appropriate according to the layout requirements of the semiconductor module 100. In the semiconductor module 100 of this example, the semiconductor elements provided on the upper arm 102 and the semiconductor elements provided on the lower arm 104 are provided facing each other in the Y-axis direction, thereby reducing switching loss. In this way, even if the positions of the semiconductor elements provided on the laminated substrate 150 are changed, the influence of the reverse recovery current Irr on the auxiliary source wiring member 14 can be avoided.

[0121] Although the present invention has been described above using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It is clear to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the claims that such modifications and improvements can also be included in the technical scope of the present invention.

[0122] It should be noted that the order of execution of each process, such as operations, procedures, steps, and stages, in the devices, systems, programs, and methods shown in the claims, specifications, and drawings is not specifically indicated as "before," "prior to," etc., and may be realized in any order unless the output of a previous process is used in a later process. Even if the operational flow in the claims, specifications, and drawings is explained using "first," "next," etc. for convenience, it does not mean that it is essential to perform the process in this order. [Explanation of symbols]

[0123] 10 switching element, 11 gate electrode, 12 gate wiring member, 13 source electrode, 14 auxiliary source wiring member, 15 diode element, 16 anode electrode, 20 switching element, 21 gate electrode, 22 gate wiring member, 23 source electrode, 24 auxiliary source wiring member, 25 diode element, 26 anode electrode, 31 circuit board, 32 circuit board, 33 circuit board, 36 circuit board, 38 circuit board, 100 semiconductor module, 102 upper arm , 104...lower arm, 106...P-type wiring section, 108...N-type wiring section, 110...output terminal, 112...gate external terminal, 114...auxiliary source external terminal, 122...gate external terminal, 124...auxiliary source external terminal, 132...positive terminal, 134...negative terminal, 150...laminated substrate, 151...insulating plate, 152...circuit board, 153...metal plate, 160...semiconductor assembly, 170...casing, 181...first arrangement area, 182...second arrangement area, 183...third arrangement area, 200...load, 210...drive section

Claims

1. a first switching element provided in one of the upper arm or the lower arm; a second switching element provided in the other of the upper arm or the lower arm; a first diode element connected in parallel with the first switching element; a second diode element connected in parallel with the second switching element; a laminated substrate having a main surface and two sides extending in a first direction and a second direction, a gate external terminal and an auxiliary source external terminal that are provided on a negative side of the upper arm and the lower arm in the first direction and that are arranged in the second direction; A P-type wiring portion connected to a positive terminal; An N-type wiring portion connected to the negative terminal; Equipped with the first switching element, the second switching element, the first diode element, and the second diode element are provided on the laminated substrate; At least one of the first switching element or the first diode element is provided to face at least one of the second switching element or the second diode element in the second direction, The first switching element and the second switching element are disposed between the P-type wiring portion and the N-type wiring portion in the first direction. Semiconductor module.

2. An auxiliary source wiring member connected to the source electrode of the first switching element is physically separated from an output wiring between the drain electrode of the second switching element and an output terminal. The semiconductor module according to claim 1 .

3. The auxiliary source wiring member of the first switching element directly connects the source electrode of the first switching element and an auxiliary source external terminal. The semiconductor module according to claim 2 .

4. The auxiliary source wiring member connected to the source electrode of the first switching element is not physically separated from the output wiring between the drain electrode of the second switching element and the output terminal. The semiconductor module according to claim 1 .

5. The auxiliary source wiring member of the first switching element connects the source electrode of the first switching element and an auxiliary source external terminal via a conductive circuit board on which the drain electrode of the second switching element is arranged. The semiconductor module according to claim 4 .

6. The first switching element and the second switching element are provided opposite to each other in the second direction. The semiconductor module according to claim 1 .

7. The first switching element and the first diode element are provided opposite to each other in the first direction. The semiconductor module according to claim 1 .

8. The first diode element and the second diode element are provided opposite to each other in the second direction. The semiconductor module according to claim 1 .

9. The second switching element and the second diode element are provided on a lower arm and are opposed to each other in the second direction. The semiconductor module according to claim 1 .

10. the first switching element is provided on the negative side of the first diode element in the first direction, The second switching element is provided on the negative side of the second diode element in the first direction. The semiconductor module according to claim 1 .

11. The P-type wiring portion is provided between the N-type wiring portion and an output terminal in the first direction. The semiconductor module according to claim 1 .

12. The P-type wiring portion and the N-type wiring portion have extension portions extending in the second direction. The semiconductor module according to claim 1 .

13. The first diode element is provided on the extension portion of the P-type wiring portion. The semiconductor module according to claim 12.

14. an output terminal provided on the positive side of the upper arm and the lower arm in the first direction; The semiconductor module according to claim 1 .

15. The second switching element is provided in the lower arm and is connected to the output terminal via the first diode element provided in the upper arm. The semiconductor module according to claim 14.

16. a first switching element provided in one of the upper arm or the lower arm; a second switching element provided in the other of the upper arm or the lower arm; a first diode element connected in parallel with the first switching element; a second diode element connected in parallel with the second switching element; a laminated substrate having a main surface and two sides extending in a first direction and a second direction, a first wiring portion connected to one of the positive electrode terminal and the negative electrode terminal and extending in the second direction; a second wiring portion connected to the other of the positive electrode terminal and the negative electrode terminal and extending in the second direction; a plurality of gate external terminals provided in a first arrangement region extending in the second direction and electrically connected to the gate electrode of the first switching element or the gate electrode of the second switching element; a plurality of auxiliary external source terminals provided in the first arrangement region and electrically connected to a source electrode of the first switching element or a source electrode of the second switching element; a first gate wiring member that connects the gate electrode of the first switching element to a corresponding one of the plurality of gate external terminals; a first auxiliary source wiring member connecting the source electrode of the first switching element and a corresponding one of the plurality of auxiliary source external terminals; a second gate wiring member connecting the gate electrode of the second switching element to a corresponding one of the plurality of gate external terminals; a second auxiliary source wiring member connecting the source electrode of the second switching element and a corresponding one of the plurality of auxiliary source external terminals; Equipped with the first switching element and the second switching element are provided opposite to each other in the second direction, The first switching element and the second switching element are provided on either side of the first arrangement region and the second wiring portion. Semiconductor module.

17. an output terminal provided in a second arrangement region extending in the second direction; The first switching element and the second switching element are provided on either side of the second arrangement region and the first wiring portion. The semiconductor module according to claim 16.

18. The upper arm and the lower arm are each configured as three legs. The semiconductor module according to claim 16.

19. The positive electrode terminal and the negative electrode terminal are provided in a third arrangement region arranged alongside the three legs in the second direction. The semiconductor module according to claim 18.

20. The upper arm of each of the three legs is connected to an output terminal by a wire member that crosses the first wiring portion.

20. The semiconductor module according to claim 19.

21. The first switching element and the second switching element are disposed between the first wiring portion and the second wiring portion in the first direction. The semiconductor module according to any one of claims 16 to 20.

22. The first wiring portion is a P-type wiring portion connected to the positive electrode terminal, The second wiring portion is an N-type wiring portion connected to the negative electrode terminal. The semiconductor module according to any one of claims 16 to 20.

23. A first circuit board for forming the upper arm; A second circuit board for forming the lower arm; Equipped with the first diode element is mounted on the first circuit board; The second diode element is mounted on the second circuit board. The semiconductor module according to any one of claims 16 to 20.

24. A first circuit board for forming the upper arm; A second circuit board for forming the lower arm; Equipped with the first diode element is mounted on the first wiring portion, The second diode element is mounted on the second circuit board. The semiconductor module according to any one of claims 16 to 20.

25. A gate electrode of the first switching element is provided to face a gate electrode of the second switching element in the second direction. The semiconductor module according to any one of claims 16 to 20.

26. A connection point between the first auxiliary source wiring member and the source electrode of the first switching element faces a connection point between the second auxiliary source wiring member and the source electrode of the second switching element in the second direction. The semiconductor module according to any one of claims 16 to 20.

27. the first diode element is provided with the second wiring portion and the first switching element interposed therebetween, The second diode element is provided with the second wiring portion and the second switching element interposed therebetween. The semiconductor module according to any one of claims 16 to 20.

28. the first switching element and the first diode element are disposed in an upper arm, The second switching element and the second diode element are disposed in a lower arm.

21. The semiconductor module according to claim 1, wherein the semiconductor module is a semiconductor substrate.

29. A plurality of upper arms and a plurality of lower arms are provided, The switching elements of the upper arm and the switching elements of the lower arm are arranged alternately in the second direction.

21. The semiconductor module according to claim 1, wherein the semiconductor module is a semiconductor substrate.

30. the first switching element and the second switching element are SiC-MOS; The first diode element and the second diode element are SiC-SBDs.

21. The semiconductor module according to claim 1, wherein the semiconductor module is a semiconductor substrate.

31. A first switching element provided in one of the upper arm or the lower arm; a second switching element provided in the other of the upper arm or the lower arm; a first diode element connected in parallel with the first switching element; a second diode element connected in parallel with the second switching element; a laminated substrate having a main surface and two sides extending in a first direction and a second direction, a gate external terminal and an auxiliary source external terminal that are provided on a negative side of the upper arm and the lower arm in the first direction and that are arranged in the second direction; A P-type wiring portion connected to a positive terminal and the upper arm; An N-type wiring portion connected to a negative terminal and the lower arm; an output terminal connected to the upper arm and the lower arm; A semiconductor module comprising: the first switching element, the second switching element, the first diode element, and the second diode element are provided on the laminated substrate; At least one of the first switching element or the first diode element is provided to face at least one of the second switching element or the second diode element in the second direction, the semiconductor module has a first side extending in the first direction in a plan view, a second side extending in the first direction opposite to the first side, a third side extending in the second direction, and a fourth side extending in the second direction opposite to the third side, The positive electrode terminal and the negative electrode terminal are provided on the first side, the gate external terminal and the auxiliary source external terminal are provided on the third side; The output terminal is provided on the fourth side. Semiconductor module.

32. An auxiliary source wiring member connected to the source electrode of the first switching element is physically separated from an output wiring between the drain electrode of the second switching element and the output terminal. The semiconductor module according to claim 31.

33. The auxiliary source wiring member of the first switching element directly connects the source electrode of the first switching element and an auxiliary source external terminal. The semiconductor module according to claim 32.

34. An auxiliary source wiring member connected to the source electrode of the first switching element is not physically separated from an output wiring between the drain electrode of the second switching element and the output terminal. The semiconductor module according to claim 31.

35. The auxiliary source wiring member of the first switching element connects the source electrode of the first switching element and an auxiliary source external terminal via a conductive circuit board on which the drain electrode of the second switching element is arranged.

35. The semiconductor module according to claim 34.

36. The first switching element and the second switching element are provided opposite each other in the second direction.

35. The semiconductor module according to any one of claims 31 to 34.

37. The first switching element and the first diode element are provided opposite each other in the first direction.

35. The semiconductor module according to any one of claims 31 to 34.

38. The first diode element and the second diode element are provided opposite each other in the second direction.

35. The semiconductor module according to any one of claims 31 to 34.

39. The second switching element and the second diode element are provided on a lower arm and are opposed to each other in the second direction.

35. The semiconductor module according to any one of claims 31 to 34.

40. The first switching element is provided on the negative side of the first direction relative to the first diode element, The second switching element is provided on the negative side of the second diode element in the first direction.

35. The semiconductor module according to any one of claims 31 to 34.

41. The first switching element and the second switching element are disposed between the P-type wiring portion and the N-type wiring portion in the first direction.

35. The semiconductor module according to any one of claims 31 to 34.

42. The P-type wiring portion is provided between the N-type wiring portion and the output terminal in the first direction.

42. The semiconductor module according to claim 41.

43. The P-type wiring portion and the N-type wiring portion have an extension portion extending in the second direction.

42. The semiconductor module according to claim 41.

44. The first diode element is provided in the extension portion of the P-type wiring portion.

44. The semiconductor module of claim 43.

45. The output terminal is provided on the positive side of the first direction relative to the upper arm and the lower arm.

35. The semiconductor module according to any one of claims 31 to 34.

46. The second switching element is provided on the lower arm and is connected to the output terminal via the first diode element provided on the upper arm.

46. ​​The semiconductor module of claim 45.

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