Driving substrate, manufacturing method thereof, and display device

Abstract

The present disclosure provides a driving substrate, a manufacturing method thereof, and a display device related to the display technology field. The driving substrate includes a base substrate, a first driving functional layer provided on a first surface of the base substrate and including a plurality of driving thin film transistors and a plurality of signal wirings, at least one of which has a single-layer structure and a thickness greater than a threshold, and a pad layer provided on the first driving functional layer on a side farther from the base substrate and including a plurality of first pads connected to first electrodes of the corresponding driving thin film transistors and a plurality of second pads connected to common electrode lines of the signal wirings. According to the present disclosure, the number of patterning processes in manufacturing the driving substrate can be reduced.

Description

[Technical field]

[0001] The present disclosure relates to the field of display technology, and more particularly to a driving substrate and a manufacturing method thereof, and a display device. [Background technology]

[0002] Micro-LED (micro light-emitting diode) display technology reduces the size of conventional LEDs (light-emitting diodes) to less than 100um, and then transfers them to a driving substrate using giant transfer technology to form Micro-LED displays of various different sizes. Micro-LEDs have many advantages, such as self-emitting high brightness, high contrast, ultra-high resolution and color saturation, long life, fast response speed, energy saving, and wide environmental adaptability, and are expected to be well applied in various fields. Summary of the Invention

[0003] SUMMARY OF THE DISCLOSURE The embodiments of the present disclosure provide a driving substrate, a manufacturing method thereof, and a display device that can reduce the number of patterning processes in manufacturing the driving substrate.

[0004] In one aspect, an embodiment of the present disclosure provides a driving substrate including: a base substrate; a first driving functional layer provided on a first surface of the base substrate, the first driving functional layer including a plurality of driving thin film transistors and a plurality of signal wirings, at least one of which has a single-layer structure and has a thickness greater than a threshold; and a pad layer provided on a side of the first driving functional layer away from the base substrate, the pad layer including a plurality of first pads connected to first electrodes of corresponding driving thin film transistors and a plurality of second pads connected to common electrode lines of the signal wirings.

[0005] In some embodiments, the driving substrate further includes a second driving functional layer provided on a second surface opposite to the first surface of the base substrate, the second driving functional layer including a lead gasket and a joint pin connected to the lead gasket. A plurality of grooves are provided on a side surface of the base substrate, each of the grooves extending in a direction perpendicular to the base substrate and penetrating the first surface and the second surface of the base substrate. At least a portion of a conductive connection portion that corresponds to the groove in a one-to-one relationship and connects the corresponding signal wiring and the lead gasket is located within the corresponding groove.

[0006] In some embodiments, the plurality of signal wirings include a power supply voltage signal line and the common electrode line, and the thicknesses of the power supply voltage signal line and the common electrode line are both greater than the threshold value.

[0007] In some embodiments, the power supply voltage signal line and the common electrode line are provided in the same layer and made of the same material.

[0008] In some embodiments, the drive substrate further includes a signal transmission line connected to the signal wiring so as to form a lattice structure with the signal wiring.

[0009] In some embodiments, the first driving function layer includes, in a direction away from the first surface, an active layer, a first gate insulating layer, a first gate metal layer, a second gate insulating layer, a second gate metal layer, a first planar layer, a first source-drain metal layer, a second planar layer, a second source-drain metal layer in a pattern including the signal wiring, and a third planar layer, in this order.

[0010] In some embodiments, the second source-drain metal layer includes a laminated copper layer and a metal layer, the metal layer being disposed on a side of the copper layer closer to the underlying substrate, and an adhesion between the metal layer and the second planar layer is greater than an adhesion between the copper layer and the second planar layer.

[0011] In some embodiments, the copper layer has a thickness of 2-30 um.

[0012] In some embodiments, the driving substrate further includes a first passivation layer located between the copper layer and the first planar layer and using an inorganic insulating material.

[0013] In some embodiments, the driving substrate further includes a second passivation layer located between the copper layer and the second planar layer and using an inorganic insulating material.

[0014] In another aspect, a display device is provided that includes the above-mentioned driving substrate and an electronic element fixed to the pad layer so that a first pole is bonded and connected to the first pad and a second pole is bonded and connected to the second pad.

[0015] In another aspect, a method for manufacturing a driving substrate is provided, the method including the steps of: preparing a base substrate; forming a first driving functional layer on a first surface of the base substrate, the first driving functional layer including a plurality of driving thin film transistors and a plurality of signal wirings, at least one of which has a single-layer structure and has a thickness greater than a threshold value; and forming a pad layer on a side of the first driving functional layer away from the base substrate, the pad layer including a plurality of first pads connected to first electrodes of corresponding driving thin film transistors and a plurality of second pads connected to common electrode lines of the signal wirings.

[0016] In some embodiments, the driving substrate includes a first source-drain metal layer pattern and a second source-drain metal layer pattern, and the second source-drain metal layer pattern includes the signal wiring. Forming the signal wiring includes forming a seed layer having a thickness less than a threshold, growing a conductive layer on the seed layer by electroplating, forming a second source-drain metal layer by the seed layer and the conductive layer, and patterning the second source-drain metal layer to form the signal wiring.

[0017] In some embodiments, the driving substrate includes a first source-drain metal layer pattern and a second source-drain metal layer pattern, and the second source-drain metal layer pattern includes the signal wiring. Forming the signal wiring includes forming a seed layer having a thickness less than a threshold, patterning the seed layer to form a seed layer pattern in an area where the signal wiring is to be formed, and growing a conductor layer pattern on the seed layer pattern by electroless plating, and forming the signal wiring by the conductor layer pattern and the seed layer pattern.

[0018] In some embodiments, forming the seed layer includes forming a copper layer and a metal layer that is disposed on a side of the copper layer closer to the base substrate and has an adhesion to an insulating layer that is greater than the adhesion between the copper layer and the insulating layer. [Brief description of the drawings]

[0019] [Figure 1] FIG. 1 is a diagram showing a structure of a driving substrate in the prior art. [Diagram 2] 1A and 1B are diagrams illustrating a structure of a driving substrate according to an embodiment of the present disclosure. [Diagram 3] FIG. 4 is a diagram showing wiring in a display area of ​​a driving substrate according to an embodiment of the present disclosure. [Figure 4] FIG. 4 is a partially enlarged view of FIG. [Diagram 5] 5 is a cross-sectional view taken along the line AA' in FIG. [Figure 6] 5 is a cross-sectional view taken along the line BB' of FIG. [Figure 7] 5 is a cross-sectional view taken along the CC' direction in FIG. [Figure 8] 5 is a cross-sectional view taken along the line DD' of FIG. [Figure 9] FIG. 2 is a diagram showing a pad area of ​​a driving substrate according to an embodiment of the present disclosure. [Figure 10] 10 is a cross-sectional view taken along the EE' direction in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] In order to more clearly illustrate the technical problems to be solved, the technical means, and advantages of the embodiments of the present disclosure, a detailed description will be given below with reference to the drawings and specific embodiments.

[0021] The driving board of a Micro-LED display has a large current load, which can reach tens of milliamperes, so there are high requirements for the line width and resistance value of the signal wiring. If the resistance value of the signal wiring is too high, the loss of electrical signals in the signal wiring will be large, and the power consumption of the driving board will be high.

[0022] Fig. 1 is a diagram showing the structure of a driving substrate in the prior art. As shown in Fig. 1, the driving substrate includes a base substrate 10, a first driving functional layer located on a first surface of the base substrate 10, and a second driving functional layer located on a second surface of the base substrate 10, where the first surface and the second surface are two opposing surfaces.Here, the first driving function layer includes an active layer 11 made of polycrystalline silicon and having a thickness in the range of approximately 400 to 500 angstroms, a first gate insulating layer 12 made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride and having a thickness in the range of approximately 400 to 800 angstroms, a first gate metal layer 13 made of Mo and having a thickness in the range of approximately 2500 to 3600 angstroms, and a second gate insulating layer 14 made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride and having a thickness in the range of approximately 1000 to 2000 angstroms. A second gate insulating layer 14 having a thickness in the range of about 2500 to 3600 angstroms, a second gate metal forming layer 15 made of Mo and having a thickness in the range of about 2500 to 3600 angstroms, an interlayer insulating layer 16 made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride and having a thickness in the range of about 2000 to 3000 angstroms, and a first source drain layer 17 having a titanium / aluminum / titanium laminate structure and having thicknesses of 500 angstroms / 5000 angstroms / 500 angstroms, respectively. a first flat layer 18 made of an organic resin and having a thickness in the range of approximately 18,000 to 22,000 angstroms; a second source / drain metal layer 19 made of a titanium / aluminum / titanium laminate structure having thicknesses of 500 angstroms / 6,500 angstroms / 500 angstroms, respectively; a second flat layer 20 made of an organic resin and having a thickness in the range of approximately 18,000 to 22,000 angstroms; The first drive function layer includes a first passivation layer 21 having a thickness in the range of about 2000 to 3000 angstroms, a third source-drain metal layer 22 made of copper and having a thickness in the range of about 5500 to 6500 angstroms, a second passivation layer 23 made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride and having a thickness in the range of about 2000 to 3000 angstroms, and a third flat layer 24 made of an organic resin and having a thickness in the range of about 18000 to 22000 angstroms. The first drive function layer further includes a buffer layer (not shown) located between the active layer 11 and the base substrate 10.The buffer layer is made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride, and specifically has a laminated structure of silicon nitride / silicon oxide with thicknesses of 500 angstroms / 3000 angstroms, respectively.

[0023] The first source drain metal layer 17 for fabricating the data line further includes a first sub-pattern 171 for transmitting a VDD (power supply voltage) signal and a second sub-pattern 172 for transmitting a drive voltage signal. The second source drain metal layer 19 includes a third sub-pattern 191 for transmitting a VDD signal and a fourth sub-pattern 192 for transmitting a VSS (low voltage) signal. The third source drain metal layer 22 includes a fifth sub-pattern 221 for transmitting a VDD signal, a sixth sub-pattern 222 for transmitting a VSS signal, and a seventh sub-pattern 223 for transmitting a drive voltage signal. The third flat layer 24 includes a via that exposes the sixth sub-pattern 222 that also serves as a pad and the seventh sub-pattern 223 that also serves as a pad. The N pad 252 of the LED 25 is bonded and connected to the sixth sub-pattern 222, and the P pad 251 of the LED 25 is bonded and connected to the seventh sub-pattern 223.

[0024] The second actuation functional layer includes a fan-out wiring structure 26 having a laminated structure of Al / Mo and a thickness of 6000 angstroms / 600 angstroms, a passivation layer 27 made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride and having a thickness within a range of approximately 5000 to 7000 angstroms, a bonding pin 282 for bonding to a flexible circuit board, and a lead gasket 281 connected to the bonding pin 282 via the fan-out wiring structure 26. The bonding pin 282 and the lead gasket 281 are made of a transparent conductive material such as ITO and have a thickness within a range of approximately 400 to 600 angstroms.

[0025] The multiple joining pins 282 are later joined to terminals of a flexible circuit board, and since the multiple lead gaskets 281 correspond one-to-one to the conductive structure formed by the parallel connection of the first conductive sub-pattern 312 and the second conductive sub-pattern 344, and the orthogonal projection of the multiple lead gaskets 281 onto the substrate plane approximately coincides with the conductive structure, the arrangement pitch of two adjacent lead gaskets 281 among the multiple lead gaskets 281 is greater than the arrangement pitch of two adjacent joining pins 282 among the multiple joining pins 282.

[0026] In addition, the first source-drain metal layer 17 further includes an eighth sub-pattern 173, the second source-drain metal layer 19 further includes a ninth sub-pattern 193, and the third source-drain metal layer 22 further includes a tenth sub-pattern 224. The eighth sub-pattern 173, the ninth sub-pattern 193, and the tenth sub-pattern 224 are connected to a lead gasket 281 along the groove on the side surface of the base substrate 10, and constitute a conductive structure for transmitting signals output from the flexible circuit board to the VDD wiring and the VSS wiring.

[0027] In the drive substrate shown in FIG. 1, in order to reduce IR Drop, two layers of metal (third sub-pattern 191 and fifth sub-pattern 221) are connected in parallel to form the VDD wiring, and three source-drain metal layers are provided in the drive substrate. This complicates the structure of the drive substrate, increases the number of patterning processes required in the manufacture of the drive substrate, and affects the production takt time of the drive substrate, resulting in higher production costs for the drive substrate.

[0028] SUMMARY OF THE DISCLOSURE The embodiments of the present disclosure provide a driving substrate, a manufacturing method thereof, and a display device that can reduce the number of patterning processes in manufacturing the driving substrate.

[0029] A driving substrate according to an embodiment of the present application includes a base substrate, a first driving functional layer provided on a first surface of the base substrate and including a plurality of driving thin film transistors and a plurality of signal wirings, at least one of which has a single-layer structure and has a thickness greater than a threshold value, and a pad layer provided on the side of the first driving functional layer away from the base substrate and including a plurality of first pads connected to first electrodes of corresponding driving thin film transistors and a plurality of second pads connected to common electrode lines of the signal wirings.

[0030] In this embodiment, since the thickness of the signal wiring itself is relatively large and IR Drop can be effectively reduced, there is no need to form the signal wiring in parallel, and the number of metal layers included in the drive substrate can be reduced, the number of patterning steps in the manufacture of the drive substrate can be reduced, and the production cost of the drive substrate can be reduced.

[0031] Specifically, the threshold value is 2 μm.

[0032] The signal wiring of the drive board includes a power supply voltage signal line VDD wiring for transmitting a first fixed level signal, and a VSS wiring for transmitting a second fixed level signal having a width value different from that of the first fixed level signal. If the resistance value of the VDD wiring and the VSS wiring is large, the power consumption of the drive board becomes large (IR Drop is large).

[0033] In the conventional technology shown in Fig. 1, the second source drain metal layer 19 is made of a titanium / aluminum / titanium laminated structure with thicknesses of 500 angstroms / 6500 angstroms / 500 angstroms, and the third source drain metal layer 22 is made of copper with a thickness of 6000 angstroms, and the second source drain metal layer 19 and the third source drain metal layer 22 are connected in parallel to form signal wiring (for example, VDD wiring and VSS wiring), and the resistivity of the signal wiring is about 0.0035Ωm. In this embodiment, the signal wiring is directly formed in a single layer from a conductive material having a thickness greater than 2um, such as copper, so that the resistivity of the signal wiring can be reduced to about 0.001Ωm, the resistivity of the signal wiring can be significantly reduced, the IR drop of the signal wiring can be reduced, and the process flow can be saved.

[0034] In some embodiments, the power supply voltage signal line and the common electrode wiring are made of the same material and are provided in the same layer, so that the power supply voltage signal line and the common electrode wiring can be formed in a single patterning process, and the number of patterning processes in the manufacture of the driving substrate can be reduced.

[0035] As shown in Figure 2, in one specific example, taking the electronic element as an LED for example, the driving substrate includes a base substrate 10, a first driving functional layer located on a first surface of the base substrate 10, and a second driving functional layer located on a second surface of the base substrate 10, where the first surface and the second surface are two opposing surfaces.

[0036] Here, the first driving function layer includes an active layer 11, a first gate insulating layer 12, a first gate metal layer 13, a second gate insulating layer 14, a second gate metal forming layer 15, a first flat layer 30, a first source drain metal layer 31, a second flat layer 32, a second source drain metal layer 34, and a third flat layer 36. The active layer 11 is made of P-Si and has a thickness in the range of about 400 to 500 angstroms, specifically, it may be 470 angstroms. The first gate insulating layer 12 is made of an inorganic insulating material such as silicon nitride, silicon oxide, silicon oxynitride, etc. and has a thickness in the range of about 400 to 800 angstroms, specifically, it may be made of a silicon oxide / silicon nitride laminated structure and has a thickness of 800 angstroms and 400 angstroms, respectively. The pattern of the first gate metal layer 13 includes a gate line, a gate electrode of a thin film transistor, etc. The first gate metal layer 13 is made of Mo and has a thickness in the range of about 2500 to 3600 angstroms, and may be specifically 3100 angstroms. The second gate insulating layer 14 is made of an inorganic insulating material such as silicon nitride, silicon oxide, silicon oxynitride, etc. and has a thickness in the range of about 1000 to 2000 angstroms, and may be specifically 1400 angstroms. The second gate metal forming layer 15 has a pattern including an electrode plate of a storage capacitor. The second gate metal forming layer 15 is made of Mo and has a thickness in the range of about 2500 to 3600 angstroms, and may be specifically 3100 angstroms. The first flat layer 30 is made of an organic resin and has a thickness in the range of about 18000 to 22000 angstroms. The first source drain metal layer 31 has a pattern including a connection line 311 for transmitting a VDD signal and a first electrode 312 of a driving thin film transistor. The first electrode is a source or a drain. The first source-drain metal layer 31 is also used to fabricate a data line. The first source-drain metal layer 31 is made of a titanium / aluminum / titanium laminated structure, and has a thickness of 500 angstroms / 5000 angstroms / 500 angstroms, respectively. The second flat layer 32 is made of an organic resin, and has a thickness in the range of approximately 18000 to 22000 angstroms.The pattern of the second source-drain metal layer 34 having a thickness larger than the threshold includes a signal wiring and a second pad 343 connected to the first electrode 312 of the driving thin film transistor. The signal wiring includes a VDD wiring 341 and a VSS wiring 342 which also serves as the first pad. The third flat layer 36 is made of an organic resin and has a thickness within a range of approximately 18,000 to 22,000 angstroms.

[0037] Furthermore, the first driving functional layer further includes a buffer layer (not shown) located between the active layer 11 and the base substrate 10. The buffer layer is made of an inorganic insulating material such as silicon nitride, silicon oxide, silicon oxynitride, etc., specifically, a laminated structure of silicon nitride / silicon oxide, and may have a thickness of 500 angstroms / 3000 angstroms, respectively. The buffer layer can prevent impurities on the base substrate 10 from penetrating into the active layer 11 and affecting the performance of the thin film transistor.

[0038] The third flat layer 36 includes a via that exposes a portion of the surface of the VSS line 342 and the second pad 343. The N pad 252 of the LED 25 is bonded and connected to the VSS line 342, and the P pad 251 of the LED 25 is bonded and connected to the second pad 343.

[0039] Since the current load of the driving board is large, reaching several tens of milliamperes, there is a high demand for the resistance performance of the signal wiring, and it is necessary to use a metal with low resistance, otherwise the wiring will generate a large amount of heat, causing the temperature to become too high. Meanwhile, copper is used as the main component of the signal wiring, since it has excellent conductive properties. Of course, the signal wiring is not limited to copper, and other metals such as silver and aluminum may be used. The thickness of the copper layer can be adjusted according to the magnitude of the current load. The larger the current load, the larger the thickness of the copper layer. The thickness of the copper layer is 2 to 30 um. In some embodiments, it is specifically 2 um. The copper layer can be formed by methods such as sputtering, electroplating, and electroless plating.

[0040] When a copper layer is formed on the second planar layer 32 by sputtering, the second planar layer 32 is damaged by plasma during sputtering, causing a phenomenon in which debris falls from the second planar layer 32, and the fallen debris contaminates the sputtering chamber. To avoid this, as shown in FIG. 2, the driving substrate further includes a first passivation layer 33 located on the second planar layer 32. The first passivation layer 33 can protect the second planar layer 32. The first passivation layer 33 may be made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride. The thickness of the first passivation layer 33 is approximately within the range of 500 to 3000 angstroms.

[0041] If the copper layer is formed by low-temperature deposition, the second planar layer 32 is not damaged by the low-temperature deposition, so in this case, the provision of the first passivation layer 33 can be omitted.

[0042] In addition, when the signal wiring is made of copper, when the third flat layer 36 is formed on the signal wiring, the surface of the copper is oxidized when the third flat layer 36 is hardened at a high temperature. To avoid this, as shown in FIG. 2, the driving substrate further includes a second passivation layer 35 located on the second source-drain metal layer 34. The second passivation layer 35 protects the copper and can prevent the surface of the copper from being oxidized when the third flat layer 36 is hardened at a high temperature. The second passivation layer 35 may be made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride. The thickness of the second passivation layer 35 is in the range of approximately 500 to 3000 angstroms. Since it is necessary to bond and connect the N pad 252 of the LED 25 to the first pad 342 and the P pad 251 of the LED 25 to the second pad 343 in a subsequent process, the second passivation layer 35 is not provided on the first pad 342 and the second pad 343. Alternatively, the second passivation layer 35 is also provided on the first pad 342 and the second pad 343, but the second passivation layer 35 on the first pad 342 and the second pad 343 is removed before bonding the LED 25.

[0043] In some embodiments, the second source-drain metal layer 34 further includes a metal layer located on the side of the copper layer closer to the base substrate in addition to the copper layer. The adhesion between the metal layer and the second planar layer 32 is greater than the adhesion between the copper layer and the second planar layer 32, which prevents the copper layer from falling off the base substrate. Specifically, the metal layer is made of at least one of Mo, MoNb, MoTi, MoWu, MoNi, and MoNiTi, and may be made of a metal oxide such as IGZO, IZO, GZO, or ITO. The thickness of the metal layer is approximately in the range of 200 to 500 angstroms.

[0044] The second actuation functional layer includes a fan-out wiring structure 26 having a laminated structure of Al / Mo and a thickness of 6000 angstroms / 600 angstroms, a passivation layer 27 made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride and having a thickness in the range of approximately 5000 to 7000 angstroms, a bonding pin 282 for bonding to a flexible circuit board, and a lead gasket 281 connected to the bonding pin 282 via the fan-out wiring structure 26. The bonding pin 282 and the lead gasket 281 are made of a transparent conductive material such as ITO and have a thickness in the range of approximately 400 to 600 angstroms.

[0045] In addition, in the first driving function layer, the first source drain metal layer 31 further includes a first conductive sub-pattern 312, and the second source drain metal layer 34 further includes a second conductive sub-pattern 344, and the first conductive sub-pattern 312 and the second conductive sub-pattern 344 are connected in parallel to form a conductive structure, which is connected to the signal line of the display area. The conductive structure is connected to the lead gasket 281 via a conductive connection part on the side of the substrate (the area shown in the elliptical dotted frame), and enables the connection between the lead gasket 281 and the signal wiring, thereby transmitting a signal output from the flexible circuit board to the signal wiring. If the conductive connection part is exposed to the outside of the substrate, it is likely to be damaged. In order to avoid damage to the conductive connection part, a groove corresponding to the conductive connection part is provided on the side of the substrate, as in the area shown in the elliptical dotted frame, and at least a part of the conductive connection part is located in the groove, thereby reducing the risk of the conductive connection part being damaged.

[0046] In the prior art, in order to reduce the IR drop of the signal wiring, of the three source-drain metal layers, one of the source-drain metal layers for forming the signal wiring covers almost the entire display area of ​​the substrate, and the thickness of the insulating layer between the two source-drain metal layers is small, resulting in a high probability of short-circuit defects occurring between the two source-drain metal layers. In the subsequent manufacturing process, for example, when the third flat layer 36 is formed by chemical vapor deposition, static electricity accumulates in the large-area metal layer, causing arc discharge, damaging the stage and affecting the yield of the driving substrate.

[0047] As shown in FIG. 3, in this embodiment, the signal transmission line is manufactured using the first source drain metal layer 31, and the signal transmission line is connected to the signal wiring manufactured in the second source drain metal layer 34 to form a lattice structure. Here, the signal wiring manufactured in the second source drain metal layer 34 includes VSS wiring and VDD wiring. Some of the signal transmission lines are connected to the VSS wiring to form a lattice structure and transmit the VSS signal. Here, the signal transmission line transmitting the VSS signal and the corresponding VSS wiring are connected at the intersection by a via that penetrates the second flat layer 32. Another part of the signal transmission line is connected to the VDD wiring to form a lattice structure and transmit the VDD signal. Here, the signal transmission line transmitting the VDD signal and the corresponding VDD wiring are connected at the intersection by a via that penetrates the second flat layer 32. In this embodiment, since the signal wiring is manufactured using a single-layer source drain metal layer, the occurrence rate of short-circuit defects can be reduced to 1% or less, and the yield of the drive substrate is guaranteed. In addition, in this embodiment, since the number of source-drain metal layers included in the driving substrate is small, even if the width of the signal wiring manufactured by the second source-drain metal pattern 34 becomes larger and the occupied area becomes larger, the occurrence rate of short-circuit defects does not increase significantly.

[0048] 4 is a partially enlarged view of FIG. 3, FIG. 5 is a cross-sectional view in the AA' direction of FIG. 4, FIG. 6 is a cross-sectional view in the BB' direction of FIG. 4, FIG. 7 is a cross-sectional view in the CC' direction of FIG. 4, and FIG. 8 is a cross-sectional view in the DD' direction of FIG. 4.

[0049] When the line width of the signal transmission line made of the first source-drain metal layer 31 is a as shown in Fig. 5, the line width of the signal wiring made of the second source-drain metal layer 34 is b as shown in Fig. 7, and the distance between the signal wirings is c, the value of a / b is 1 to 1.2, specifically 1.1, and the value of b / c is 1.8 to 2.2, specifically 2. By designing the line width of the signal transmission line and the line width and pitch of the signal wiring using the above parameters, it is possible to reduce the transmission loss of the VSS signal and the VDD signal, and also to reduce the incidence of short-circuit defects.

[0050] FIG. 9 is a diagram showing a pad region of a driving substrate according to an embodiment of the present disclosure. FIG. 10 is a cross-sectional view in the EE′ direction of FIG. 9. The pad region includes a first pad region H1 in which a first pad is provided, and a second pad region H2 in which a second pad is provided. As shown in FIG. 10, d is the horizontal distance between the edge of the first source drain metal layer 31 and the edge of the second source drain metal layer 34, e is the horizontal distance between the edge of the second source drain metal layer 34 and the edge of the second flat layer 32, f is the horizontal distance between the edge of the second flat layer 32 and the edge of the first passivation layer 33, g is the horizontal distance between the edge of the first passivation layer 33 and the edge of the third flat layer 36, and h is the horizontal distance between the edge of the third flat layer 36 and the edge of the second passivation layer 35. Here, the value of e / d is 1.4 to 1.6, specifically 1.5, the value of f / e is 1.4 to 1.6, specifically 1.5, the value of f / g is 1.4 to 1.6, specifically 1.5, and the value of h / g is 1.4 to 1.8, specifically 1.67. By designing the structure of the overlapping portion between the first source-drain metal layer 31 and the second source-drain metal layer 34 using the above parameters, it is possible to ensure a high connection yield between the first source-drain metal layer 31 and the second source-drain metal layer 34.

[0051] An embodiment of the present disclosure further provides a display device including the above-mentioned driving substrate and an electronic element fixed to the pad layer such that a first pole is bonded and connected to the first pad and a second pole is bonded and connected to the second pad.

[0052] 2, the N pad 252 of the LED 25 is bonded and connected to the first pad 342, and the P pad 251 of the LED 25 is bonded and connected to the second pad 343.

[0053] The display device is a product or part having a display function, such as a television, a display, a digital photo frame, a mobile phone, a tablet, etc. The display device may further include a flexible circuit board, a printed circuit board, and a backplane bonded to the bonding pin 282.

[0054] A manufacturing method of a driving substrate according to an embodiment of the present application includes the steps of preparing a base substrate; forming a first driving functional layer on a first surface of the base substrate, the first driving functional layer including a plurality of driving thin film transistors and a plurality of signal wirings, at least one of which has a single-layer structure and a thickness greater than a threshold; and forming a pad layer on a side of the first driving functional layer away from the base substrate, the pad layer including a plurality of first pads connected to first electrodes of corresponding driving thin film transistors and a plurality of second pads connected to common electrode lines of the signal wirings.

[0055] In this embodiment, the thickness of the signal wiring itself is relatively large, and IR Drop can be effectively reduced, so there is no need to form the signal wiring in parallel, and the number of metal layers included in the driving substrate can be reduced, the number of patterning processes in the production of the driving substrate can be reduced, and the production cost of the driving substrate can be reduced.

[0056] The method of manufacturing a drive substrate according to the embodiment of the present application is for manufacturing the drive substrate in the above embodiment.

[0057] Since the current load of the driving board is large, reaching several tens of milliamperes, there is a high demand for the resistance performance of the signal wiring, and it is necessary to use a metal with low resistance, otherwise the wiring will generate a large amount of heat, and the temperature will become too high. Meanwhile, copper is used as the main material for the signal wiring, since it has excellent conductive properties. Of course, the signal wiring is not limited to copper, and other metals such as silver and aluminum may be used. The thickness of the copper layer can be adjusted according to the magnitude of the current load. The larger the current load, the larger the thickness of the copper layer. The thickness of the copper layer is 2 to 30 um. In some embodiments, it is specifically 2 um. The copper layer can be formed by methods such as sputtering, electroplating, and electroless plating.

[0058] In one embodiment, the signal wiring is made of copper, and a thick copper layer is formed by sputtering. Taking an example where the electronic element is an LED, the method for manufacturing the driving substrate specifically includes the following steps:

[0059] In step 1, a base substrate 10 is prepared, and a buffer layer and an active layer 11 are formed on the base substrate 10. Here, the base substrate 10 may be a glass substrate, a quartz substrate, or a flexible substrate. A buffer layer is formed on the base substrate 10 by using a plasma enhanced chemical vapor deposition (PECVD) method. The buffer layer is made of oxide, nitride or oxynitride, and the corresponding reaction gas is SiH4, NH3, N2 or SiH2Cl2, NH3, N2. The buffer layer is specifically made of a silicon nitride / silicon oxide laminated structure, and has a thickness of 500 angstroms / 3000 angstroms, respectively. A semiconductor material is formed on the buffer layer, and the semiconductor material is patterned to form the active layer 11. The active layer 11 is made of P-Si and has a thickness of 400 to 500 angstroms, specifically 470 angstroms.

[0060] In step 2, a first gate insulating layer 12 is formed. Specifically, the first gate insulating layer 12 is formed to a thickness of 400 to 800 angstroms using a PECVD method. The first gate insulating layer 12 is made of an oxide, a nitride or an oxynitride, and the corresponding reaction gas is SiH4, NH3, N2 or SiH2Cl2, NH3, N2.

[0061] In step 3, the first gate metal layer 13 is patterned. Specifically, the first gate metal layer 13 having a thickness of 2500 to 3600 angstroms is deposited by sputtering or thermal evaporation. The first gate metal layer 13 is a metal such as Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, or W, or an alloy thereof, specifically made of Mo. A resist is applied to the first gate metal layer 13, and the resist is exposed using a mask to form a resist-holding region corresponding to the region where the pattern of the first gate metal layer 13 exists, and a resist-unholding region corresponding to the region other than the pattern. A development process is performed to completely remove the resist in the resist-unholding region, leaving the thickness of the resist in the resist-holding region as it is. The first gate metal layer 13 in the resist-unholding region is completely removed by an etching process, and the remaining resist is peeled off to form a pattern of the first gate metal layer 13. The pattern of the first gate metal layer 13 includes a gate line, a gate of a thin film transistor, and the like.

[0062] In step 4, the second gate insulating layer 14 is formed. Specifically, the second gate insulating layer 14 is formed to a thickness of 1000 to 2000 angstroms using a PECVD method. The second gate insulating layer 14 is made of an oxide, a nitride or an oxynitride, and the corresponding reaction gas is SiH4, NH3, N2 or SiH2Cl2, NH3, N2.

[0063] In step 5, the second gate metallization layer 15 is patterned. Specifically, the second gate metal forming layer 15 having a thickness of 2500 to 3600 angstroms is deposited by sputtering or thermal evaporation. The second gate metal forming layer 15 is made of metals such as Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W, and alloys thereof, specifically Mo. A resist is applied to the second gate metal forming layer 15, and the resist is exposed using a mask to form a resist-holding region corresponding to the region where the pattern of the second gate metal forming layer 15 exists, and a resist-unholding region corresponding to the region other than the pattern. A development process is performed to completely remove the resist in the resist-unholding region, leaving the thickness of the resist in the resist-holding region as it is. The second gate metal forming layer 15 in the resist-unholding region is completely removed by an etching process, and the remaining resist is peeled off to form a pattern of the second gate metal forming layer 15. The pattern of the second gate metal forming layer 15 includes an electrode plate of a storage capacitor, etc.

[0064] In step 6, a first planar layer 30 is formed. Specifically, the first flat layer 30 is formed by applying an organic resin to a thickness of 18,000 to 22,000 angstroms and curing it at a high temperature.

[0065] In step 7, the first source / drain metal layer 31 is patterned. Specifically, a source-drain metal layer having a thickness of about 5000 to 6000 angstroms is deposited by magnetron sputtering, thermal evaporation, or other film formation methods. The source-drain metal layer is a metal such as Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W, or an alloy thereof. The source-drain metal layer has a single-layer structure or a multilayer structure. The multilayer structure is, for example, Cu / Mo, Ti / Cu / Ti, Mo / Al / Mo, or the like, specifically a Ti / Al / Ti laminated structure, and has a thickness of 500 angstroms / 5000 angstroms / 500 angstroms, respectively. A resist is applied to the first source-drain metal layer 31, and the resist is exposed using a mask to form a resist-retained region corresponding to the region where the pattern of the first source-drain metal layer 31 exists, and a resist-unretained region corresponding to the region other than the pattern. A development process is performed to completely remove the resist in the resist-unretained region, leaving the thickness of the resist in the resist-retained region unchanged. The first source drain metal layer 31 in the resist-free region is completely removed by an etching process, and the remaining resist is peeled off to form a pattern of the first source drain metal layer 31. The pattern of the first source drain metal layer 31 includes a connection line 311 for transmitting a VDD signal and a first electrode 312 of the driving thin film transistor. Here, the first electrode is a source or a drain. The pattern of the first source drain metal layer 31 further includes a data line.

[0066] In step 8, the second planar layer 32 is formed. Specifically, the second flat layer 32 is formed by applying an organic resin having a thickness of 18,000 to 22,000 angstroms and curing it at a high temperature.

[0067] In step 9, the second source / drain metal layer 34 is patterned. A second source-drain metal layer 34 is formed on the second flat layer 32 by sputtering. The second source-drain metal layer 34 has a laminated structure of metal layer / copper. By making the adhesive strength between the metal layer and the second flat layer 32 greater than the adhesive strength between the copper and the second flat layer 32, the adhesive strength between the copper and the second flat layer 32 is increased, making it difficult for the copper to peel off. Specifically, the metal layer is made of Mo. In the second source-drain metal layer 34, the Mo has a thickness of 300 angstroms, and the copper has a thickness of about 2 um. A resist is applied to the second source drain metal layer 34, and the resist is exposed using a mask to form a resist-retained region corresponding to the region where the pattern of the second source drain metal layer 34 exists, and a resist-unretained region corresponding to the region other than the pattern. A development process is performed to completely remove the resist in the resist-unretained region, leaving the thickness of the resist in the resist-retained region unchanged. An etching process is performed to completely remove the second source drain metal layer 34 in the resist-unretained region, and the remaining resist is peeled off to form a pattern of the second source drain metal layer 34. The pattern of the second source drain metal layer 34 includes a signal wiring and a second pad 343. The signal wiring includes a VDD wiring 341 and a VSS wiring 342. Here, the VSS wiring 342 also serves as a first pad. The second pad 343 is connected to the first pole 312 of the driving thin film transistor.

[0068] In step 10, a third planar layer 36 is formed. Specifically, an organic resin having a thickness of 18,000 to 22,000 angstroms is applied and cured at a high temperature to form the third flat layer . Thereafter, the third flat layer 36 is patterned to form vias that expose the VSS wiring 342 and the second pad 343.

[0069] After the first driving functional layer is produced through steps 1 to 10 above, the base substrate 10 is turned over and a second driving functional layer is produced on the other side of the base substrate 10, thereby completing the driving substrate.

[0070] Furthermore, when a copper layer is formed on the second flat layer 32 by sputtering, the second flat layer 32 is damaged by plasma during sputtering, causing a phenomenon in which debris falls from the second flat layer 32, and the fallen debris contaminates the sputtering chamber. To avoid this, after forming the second flat layer 32, a first passivation layer 33 located on the second flat layer 32 is further formed, and the first passivation layer 33 can protect the second flat layer 32. The first passivation layer 33 is made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride, and has a thickness of 500 to 3000 angstroms.

[0071] If the copper layer is formed by a low temperature deposition method, the step of forming the first passivation layer 33 can be omitted since the low temperature deposition method does not damage the second planarization layer 32 .

[0072] Furthermore, when the third flat layer 36 is formed on the copper layer, the surface of the copper is oxidized when the third flat layer 36 is cured at a high temperature. To avoid this, after forming the pattern of the second source-drain metal layer 34, the second passivation layer 35 is formed on the pattern of the second source-drain metal layer 34, and the second passivation layer 35 protects the copper, so that the surface of the copper is prevented from being oxidized when the third flat layer 36 is cured at a high temperature. The second passivation layer 35 is made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride, and has a thickness of 500 to 3000 angstroms.

[0073] In another embodiment, the signal wiring is made of copper, and a thick copper layer is formed by electroplating. Taking an example where the electronic element is an LED, the method for manufacturing the driving substrate specifically includes the following steps:

[0074] In step 1, a base substrate 10 is prepared, and a buffer layer and an active layer 11 are formed on the base substrate 10. Here, the base substrate 10 is a glass substrate, a quartz substrate, or a flexible substrate. A buffer layer is formed on the base substrate 10 by using a plasma enhanced chemical vapor deposition (PECVD) method. The buffer layer is made of oxide, nitride or oxynitride, and the corresponding reaction gas is SiH4, NH3, N2 or SiH2Cl2, NH3, N2. The buffer layer is specifically made of a silicon nitride / silicon oxide laminated structure, and has a thickness of 500 angstroms / 3000 angstroms, respectively. A semiconductor material is formed on the buffer layer, and the semiconductor material is patterned to form the active layer 11. The active layer 11 is made of P-Si and has a thickness of 400 to 500 angstroms, specifically 470 angstroms.

[0075] In step 2, a first gate insulating layer 12 is formed. Specifically, the first gate insulating layer 12 is formed to a thickness of 400 to 800 angstroms using a PECVD method. The first gate insulating layer 12 is made of an oxide, a nitride or an oxynitride, and the corresponding reactive gas is SiH4, NH3, N2 or SiH2Cl2, NH3, N2.

[0076] In step 3, a first gate metal layer 13 is formed. Specifically, the first gate metal layer 13 having a thickness of 2500 to 3600 angstroms is deposited by sputtering or thermal evaporation. The first gate metal layer 13 is a metal such as Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, or W, or an alloy thereof, specifically made of Mo. A resist is applied to the first gate metal layer 13, and the resist is exposed using a mask to form a resist-holding region corresponding to the region where the pattern of the first gate metal layer 13 exists, and a resist-unholding region corresponding to the region other than the pattern. A development process is performed to completely remove the resist in the resist-unholding region, leaving the thickness of the resist in the resist-holding region as it is. The first gate metal layer 13 in the resist-unholding region is completely removed by an etching process, and the remaining resist is peeled off to form a pattern of the first gate metal layer 13. The pattern of the first gate metal layer 13 includes a gate line, a gate of a thin film transistor, and the like.

[0077] In step 4, the second gate insulating layer 14 is formed. Specifically, the second gate insulating layer 14 is formed to a thickness of 1000 to 2000 angstroms using a PECVD method. The second gate insulating layer 14 is made of an oxide, a nitride or an oxynitride, and the corresponding reaction gas is SiH4, NH3, N2 or SiH2Cl2, NH3, N2.

[0078] In step 5, the second gate metallization layer 15 is patterned. Specifically, the second gate metal forming layer 15 having a thickness of 2500 to 3600 angstroms is deposited by sputtering or thermal evaporation. The second gate metal forming layer 15 is made of metals such as Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W, and alloys thereof, specifically Mo. A resist is applied to the second gate metal forming layer 15, and the resist is exposed using a mask to form a resist-holding region corresponding to the region where the pattern of the second gate metal forming layer 15 exists, and a resist-unholding region corresponding to the region other than the pattern. A development process is performed to completely remove the resist in the resist-unholding region, leaving the thickness of the resist in the resist-holding region as it is. The second gate metal forming layer 15 in the resist-unholding region is completely removed by an etching process, and the remaining resist is peeled off to form a pattern of the second gate metal forming layer 15. The pattern of the second gate metal forming layer 15 includes an electrode plate of a storage capacitor, etc.

[0079] In step 6, a first planar layer 30 is formed. Specifically, the first flat layer 30 is formed by applying an organic resin having a thickness of 18,000 to 22,000 angstroms and curing it at a high temperature.

[0080] In step 7, the first source / drain metal layer 31 is patterned. Specifically, a source-drain metal layer having a thickness of about 5000 to 6000 angstroms is deposited by magnetron sputtering, thermal evaporation, or other film formation methods. The source-drain metal layer is a metal such as Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W, or an alloy thereof. The source-drain metal layer has a single-layer structure or a multilayer structure. The multilayer structure is, for example, Cu / Mo, Ti / Cu / Ti, Mo / Al / Mo, or the like, specifically a Ti / Al / Ti laminated structure, and has a thickness of 500 angstroms / 5000 angstroms / 500 angstroms, respectively. A resist is applied to the first source-drain metal layer 31, and the resist is exposed using a mask to form a resist-retained region corresponding to the region where the pattern of the first source-drain metal layer 31 exists, and a resist-unretained region corresponding to the region other than the pattern. A development process is performed to completely remove the resist in the resist-unretained region, leaving the thickness of the resist in the resist-retained region unchanged. The first source drain metal layer 31 in the resist-free region is completely removed by an etching process, and the remaining resist is peeled off to form a pattern of the first source drain metal layer 31. The pattern of the first source drain metal layer 31 includes a connection line 311 for transmitting a VDD signal and a first electrode 312 of the driving thin film transistor. Here, the first electrode is a source or a drain. The pattern of the first source drain metal layer 31 further includes a data line.

[0081] In step 8, the second planar layer 32 is formed. Specifically, the second flat layer 32 is formed by applying an organic resin having a thickness of 18,000 to 22,000 angstroms and curing it at a high temperature.

[0082] In step 9, the second source / drain metal layer 34 is patterned. A seed layer is formed on the second flat layer 32 by a sputtering method. The seed layer has a laminated structure of a metal layer / copper. The adhesive strength between the metal layer and the second flat layer 32 is made greater than the adhesive strength between the copper and the second flat layer 32, thereby increasing the adhesive strength between the copper and the second flat layer 32 and making it difficult for the copper to peel off. Specifically, the metal layer is made of Mo. The thickness of the seed layer is less than a threshold value. Specifically, the thickness of Mo in the seed layer is 300 angstroms, and the thickness of copper in the seed layer is 3000 angstroms. A copper metal layer is grown on the seed layer to a thickness of 2 um or more by electroplating, and the grown copper and the seed layer constitute the second source / drain metal layer 34. A resist is applied to the second source drain metal layer 34, and the resist is exposed using a mask to form a resist-retained region corresponding to the region where the pattern of the second source drain metal layer 34 exists, and a resist-unretained region corresponding to the region other than the pattern. A development process is performed to completely remove the resist in the resist-unretained region, leaving the thickness of the resist in the resist-retained region unchanged. An etching process is performed to completely remove the second source drain metal layer 34 in the resist-unretained region, and the remaining resist is peeled off to form a pattern of the second source drain metal layer 34. The pattern of the second source drain metal layer 34 includes a signal wiring and a second pad 343. The signal wiring includes a VDD wiring 341 and a VSS wiring 342. Here, the VSS wiring 342 also serves as a first pad. The second pad 343 is connected to the first pole 312 of the driving thin film transistor.

[0083] In step 10, a third planar layer 36 is formed. Specifically, an organic resin having a thickness of 18,000 to 22,000 angstroms is applied and cured at a high temperature to form the third flat layer . Thereafter, the third flat layer 36 is patterned to form vias that expose the VSS wiring 342 and the second pad 343.

[0084] After the first driving functional layer is produced through steps 1 to 10 above, the base substrate 10 is turned over and a second driving functional layer is produced on the other side of the base substrate 10, thereby completing the driving substrate.

[0085] Furthermore, when a copper layer is formed on the second flat layer 32 by sputtering, the second flat layer 32 is damaged by plasma during sputtering, causing a phenomenon in which debris falls from the second flat layer 32, and the fallen debris contaminates the sputtering chamber. To avoid this, after forming the second flat layer 32, a first passivation layer 33 located on the second flat layer 32 is further formed, and the first passivation layer 33 can protect the second flat layer 32. The first passivation layer 33 is made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride, and has a thickness of 500 to 3000 angstroms.

[0086] If the copper layer is formed by a low temperature deposition method, the step of forming the first passivation layer 33 can be omitted since the low temperature deposition method does not damage the second planarization layer 32 .

[0087] Furthermore, when the third flat layer 36 is formed on the copper layer, the surface of the copper is oxidized when the third flat layer 36 is cured at a high temperature. To avoid this, after forming the pattern of the second source-drain metal layer 34, the second passivation layer 35 is formed on the pattern of the second source-drain metal layer 34, and the second passivation layer 35 protects the copper, so that the surface of the copper is prevented from being oxidized when the third flat layer 36 is cured at a high temperature. The second passivation layer 35 is made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride, and has a thickness of 500 to 3000 angstroms.

[0088] In another embodiment, the signal wiring is made of copper, and a thick copper layer is formed using an electroless plating method. The electronic element is an LED. The method for manufacturing the driving substrate specifically includes the following steps:

[0089] In step 1, a base substrate 10 is prepared, and a buffer layer and an active layer 11 are formed on the base substrate 10. Here, the base substrate 10 is a glass substrate, a quartz substrate, or a flexible substrate. A buffer layer is formed on the base substrate 10 by using a plasma enhanced chemical vapor deposition (PECVD) method. The buffer layer is made of oxide, nitride or oxynitride, and the corresponding reaction gas is SiH4, NH3, N2 or SiH2Cl2, NH3, N2. The buffer layer is specifically made of a silicon nitride / silicon oxide laminated structure, and has a thickness of 500 angstroms / 3000 angstroms, respectively. A semiconductor material is formed on the buffer layer, and the semiconductor material is patterned to form the active layer 11. The active layer 11 is made of P-Si and has a thickness of 400 to 500 angstroms, specifically 470 angstroms.

[0090] In step 2, a first gate insulating layer 12 is formed. Specifically, the first gate insulating layer 12 is formed to a thickness of 400 to 800 angstroms using a PECVD method. The first gate insulating layer 12 is made of an oxide, a nitride or an oxynitride, and the corresponding reactive gas is SiH4, NH3, N2 or SiH2Cl2, NH3, N2.

[0091] In step 3, the first gate metal layer 13 is patterned. Specifically, the first gate metal layer 13 having a thickness of 2500 to 3600 angstroms is deposited by sputtering or thermal evaporation. The first gate metal layer 13 is a metal such as Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, or W, or an alloy thereof, specifically made of Mo. A resist is applied to the first gate metal layer 13, and the resist is exposed using a mask to form a resist-holding region corresponding to the region where the pattern of the first gate metal layer 13 exists, and a resist-unholding region corresponding to the region other than the pattern. A development process is performed to completely remove the resist in the resist-unholding region, leaving the thickness of the resist in the resist-holding region as it is. The first gate metal layer 13 in the resist-unholding region is completely removed by an etching process, and the remaining resist is peeled off to form a pattern of the first gate metal layer 13. The pattern of the first gate metal layer 13 includes a gate line, a gate of a thin film transistor, and the like.

[0092] In step 4, the second gate insulating layer 14 is formed. Specifically, the second gate insulating layer 14 is formed to a thickness of 1000 to 2000 angstroms using a PECVD method. The second gate insulating layer 14 is made of an oxide, a nitride or an oxynitride, and the corresponding reaction gas is SiH4, NH3, N2 or SiH2Cl2, NH3, N2.

[0093] In step 5, the second gate metallization layer 15 is patterned. Specifically, the second gate metal forming layer 15 having a thickness of 2500 to 3600 angstroms is deposited by sputtering or thermal evaporation. The second gate metal forming layer 15 is made of metals such as Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W, and alloys thereof, specifically Mo. A resist is applied to the second gate metal forming layer 15, and the resist is exposed using a mask to form a resist-holding region corresponding to the region where the pattern of the second gate metal forming layer 15 exists, and a resist-unholding region corresponding to the region other than the pattern. A development process is performed to completely remove the resist in the resist-unholding region, leaving the thickness of the resist in the resist-holding region as it is. The second gate metal forming layer 15 in the resist-unholding region is completely removed by an etching process, and the remaining resist is peeled off to form a pattern of the second gate metal forming layer 15. The pattern of the second gate metal forming layer 15 includes an electrode plate of a storage capacitor, etc.

[0094] In step 6, a first planar layer 30 is formed. Specifically, the first flat layer 30 is formed by applying an organic resin having a thickness of 18,000 to 22,000 angstroms and curing it at a high temperature.

[0095] In step 7, the first source / drain metal layer 31 is patterned. Specifically, a source-drain metal layer having a thickness of about 5000 to 6000 angstroms is deposited by magnetron sputtering, thermal evaporation, or other film formation methods. The source-drain metal layer is a metal such as Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W, or an alloy thereof. The source-drain metal layer has a single-layer structure or a multilayer structure. The multilayer structure is, for example, Cu / Mo, Ti / Cu / Ti, Mo / Al / Mo, or the like, specifically a Ti / Al / Ti laminated structure, and has a thickness of 500 angstroms / 5000 angstroms / 500 angstroms, respectively. A resist is applied to the first source-drain metal layer 31, and the resist is exposed using a mask to form a resist-retained region corresponding to the region where the pattern of the first source-drain metal layer 31 exists, and a resist-unretained region corresponding to the region other than the pattern. A development process is performed to completely remove the resist in the resist-unretained region, leaving the thickness of the resist in the resist-retained region unchanged. The first source drain metal layer 31 in the resist-free region is completely removed by an etching process, and the remaining resist is peeled off to form a pattern of the first source drain metal layer 31. The pattern of the first source drain metal layer 31 includes a connection line 311 for transmitting a VDD signal and a first electrode 312 of the driving thin film transistor. Here, the first electrode is a source or a drain. The pattern of the first source drain metal layer 31 further includes a data line.

[0096] In step 8, the second planar layer 32 is formed. Specifically, the second flat layer 32 is formed by applying an organic resin to a thickness of 18,000 to 22,000 angstroms and curing it at a high temperature.

[0097] In step 9, the second source / drain metal layer 34 is patterned. A seed layer is formed on the second flat layer 32 by a sputtering method. The seed layer has a laminated structure of a metal layer / copper. The adhesive strength between the metal layer and the second flat layer 32 is made greater than the adhesive strength between the copper and the second flat layer 32, thereby increasing the adhesive strength between the copper and the second flat layer 32 and making it difficult for the copper to peel off. Specifically, the metal layer is made of Mo. The thickness of the seed layer is less than a threshold value. Specifically, the thickness of Mo in the seed layer is 300 angstroms, and the thickness of copper in the seed layer is 3000 angstroms. A resist is applied to the seed layer, and the resist is exposed using a mask to form resist-retained regions corresponding to the regions where the pattern of the second source-drain metal layer 34 exists, and resist-unretained regions corresponding to the regions other than the pattern. A development process is performed to completely remove the resist in the resist-unretained regions, leaving the thickness of the resist in the resist-retained regions unchanged. An etching process is performed to completely remove the seed layer in the resist-unretained regions, forming the seed layer pattern. Metal copper is grown to a thickness of 2 to 3 um on the seed layer pattern by electroless plating. The grown copper and the seed layer pattern form a pattern of the second source-drain metal layer 34. The pattern of the second source-drain metal layer 34 includes a signal wiring and a second pad 343. The signal wiring includes a VDD wiring 341 and a VSS wiring 342. Here, the VSS wiring 342 also serves as a first pad. The second pad 343 is connected to the first electrode 312 of the driving thin film transistor.

[0098] In step 10, a third planar layer 36 is formed. Specifically, an organic resin having a thickness of 18,000 to 22,000 angstroms is applied and cured at a high temperature to form the third flat layer . Thereafter, the third flat layer 36 is patterned to form vias that expose the VSS wiring 342 and the second pad 343.

[0099] After the first driving functional layer is produced through steps 1 to 10 above, the base substrate 10 is turned over and a second driving functional layer is produced on the other side of the base substrate 10, thereby completing the driving substrate.

[0100] Furthermore, when a copper layer is formed on the second flat layer 32 by sputtering, the second flat layer 32 is damaged by plasma during sputtering, causing a phenomenon in which debris falls from the second flat layer 32, and the fallen debris contaminates the sputtering chamber. To avoid this, after forming the second flat layer 32, a first passivation layer 33 located on the second flat layer 32 is further formed, and the first passivation layer 33 can protect the second flat layer 32. The first passivation layer 33 is made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride, and has a thickness of 500 to 3000 angstroms.

[0101] If the copper layer is formed by a low temperature deposition method, the step of forming the first passivation layer 33 can be omitted since the low temperature deposition method does not damage the second planarization layer 32 .

[0102] Furthermore, when the third flat layer 36 is formed on the copper layer, the surface of the copper is oxidized when the third flat layer 36 is cured at a high temperature. To avoid this, after forming the pattern of the second source-drain metal layer 34, the second passivation layer 35 is formed on the pattern of the second source-drain metal layer 34, and the second passivation layer 35 protects the copper, so that the surface of the copper is prevented from being oxidized when the third flat layer 36 is cured at a high temperature. The second passivation layer 35 is made of an inorganic insulating material such as silicon nitride, silicon oxide, or silicon oxynitride, and has a thickness of 500 to 3000 angstroms.

[0103] In the embodiments of the methods of the present disclosure, the numbers of the steps are not used to define the order of the steps, and those skilled in the art can change the order of the steps without creative labor and still fall within the scope of protection of the present disclosure.

[0104] Unless otherwise defined, technical and scientific terms used in this disclosure shall have the ordinary meaning as understood by a person of ordinary skill in the field to which this disclosure belongs. The terms "first", "second" and similar terms used in this disclosure are merely used to distinguish different components, and do not denote any order, quantity or importance. The terms "comprise" and similar terms such as "contain" mean that the element or component appearing before the term covers the elements or components listed after the term and their equivalents, and does not exclude other elements or components. The terms "connect" or "couple" and other similar terms are not limited to physical or mechanical connections, but also include electrical connections, whether direct or indirect. The terms "upper", "lower", "left", "right", and the like, represent relative positional relationships, and when the absolute position of the described object is changed, the relative positional relationships are correspondingly changed.

[0105] It should be noted that when an element, such as a layer, film, region, or substrate, is described as being "on" or "under" another element, the element may be "directly on" or "under" the other element, or there may be intervening elements.

[0106] The above is a preferred embodiment of the present disclosure. However, those skilled in the art can make various improvements and modifications without departing from the principles described in the present disclosure. These improvements and modifications should also be considered as part of the scope of protection of the present disclosure.

Claims

1. A base substrate; a first driving functional layer provided on a first surface of the base substrate, the first driving functional layer including a plurality of driving thin film transistors and a plurality of signal wirings, at least one of which has a single-layer structure and has a thickness greater than a threshold value of 2 μm; and a pad layer provided on a side of the first driving functional layer farther from the base substrate, the pad layer including a plurality of first pads connected to first electrodes of the corresponding driving thin film transistors and a plurality of second pads connected to common electrode lines of the signal wirings, the first driving function layer includes, in a direction away from the first surface, an active layer, a first gate insulating layer, a first gate metal layer, a second gate insulating layer, a second gate metal layer, a first flat layer, a first source-drain metal layer, a second flat layer, a second source-drain metal layer having a pattern including the signal wiring, and a third flat layer, in this order; the second source / drain metal layer includes a copper layer and a metal layer stacked together; the metal layer is provided on a side of the copper layer closer to the base substrate, The driving substrate, wherein an adhesive strength between the metal layer and the second flat layer is greater than an adhesive strength between the copper layer and the second flat layer.

2. a second actuation function layer provided on a second surface of the base substrate opposite to the first surface, the second actuation function layer including a lead wire gasket and a joint pin connected to the lead wire gasket; A plurality of grooves are provided on a side surface of the base substrate, each of the grooves extending in a direction perpendicular to the base substrate and penetrating a first surface and a second surface of the base substrate; 2. The drive substrate according to claim 1, wherein at least a portion of a conductive connection portion that corresponds one-to-one with the groove and connects the corresponding signal wiring and the lead wire gasket is located within the corresponding groove.

3. the plurality of signal wirings include a power supply voltage signal line and the common electrode line; The driving substrate according to claim 1 , wherein the thicknesses of the power supply voltage signal lines and the common electrode lines are both greater than the threshold value.

4. 4. The driving substrate according to claim 3, wherein the power supply voltage signal line and the common electrode line are provided in the same layer and made of the same material.

5. The driving substrate according to claim 3 , further comprising a signal transmission line connected to the signal wiring so as to form a lattice structure with the signal wiring.

6. 2. The driving substrate according to claim 1, wherein the copper layer has a thickness of 2 to 30 um.

7. The driving substrate according to claim 1 , further comprising a first passivation layer, the first passivation layer being located between the copper layer and the first planar layer and made of an inorganic insulating material.

8. The driving substrate according to claim 1 , further comprising a second passivation layer, the second passivation layer being located between the copper layer and the second planar layer and made of an inorganic insulating material.

9. A driving substrate according to any one of claims 1 to 8, and an electronic element fixed to the pad layer so that a first electrode is bonded and connected to the first pad and a second electrode is bonded and connected to the second pad.

10. providing a base substrate; forming a first driving functional layer on a first surface of the base substrate, the first driving functional layer including a plurality of driving thin film transistors and a plurality of signal wirings, at least one of which has a single-layer structure and a thickness greater than a threshold value of 2 μm; forming a pad layer including a plurality of first pads connected to a first electrode of the corresponding driving thin film transistor and a plurality of second pads connected to a common electrode line of the signal wiring on a side of the first driving functional layer farther from the base substrate; The driving substrate includes a first source-drain metal layer pattern and a second source-drain metal layer pattern, the second source-drain metal layer pattern includes the signal wiring, and forming the signal wiring includes forming a seed layer having a thickness less than a threshold; The method for manufacturing a drive substrate, characterized in that forming the seed layer includes a step of forming a copper layer and a metal layer that is provided on the side of the copper layer closer to the base substrate and has an adhesion to an insulating layer that is greater than the adhesion between the copper layer and the insulating layer.

11. The forming of the signal wiring further comprises: growing a conductive layer on the seed layer by electroplating, the seed layer and the conductive layer forming a second source-drain metal layer; 11. The method of claim 10, further comprising: patterning the second source / drain metal layer to form the signal wiring.

12. The forming of the signal wiring further comprises: patterning the seed layer to form a pattern of the seed layer in an area where a signal wiring is to be formed; The method for manufacturing a driving substrate according to claim 10, further comprising a step of growing a conductive layer pattern on the seed layer pattern by electroless plating, and forming the signal wiring by the conductive layer pattern and the seed layer pattern.

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