Pad carrier for horizontal pre-wash module

Abstract

The horizontal pre-clean module includes a chamber including a vessel and a lid that collectively define a processing area, a rotatable reduced pressure table disposed within the processing area, the rotatable reduced pressure table including a substrate receiving surface, a pad conditioning station disposed proximate the rotatable reduced pressure table, a pad carrier placement arm having a first end and a second end distal from the first end, a pad carrier assembly coupled to the first end of the pad carrier placement arm, and an actuator coupled to the second end of the pad carrier placement arm, the actuator configured to pivot the pad carrier assembly between a first position above the rotatable reduced pressure table and a second position above the pad conditioning station. The pad carrier assembly includes a gimbal base and a pad carrier coupled to the gimbal base, the gimbal base and the pad carrier configured to support a buffing pad by a mechanical clamping mechanism and a suction clamping mechanism.

Description

[Technical field]

[0001]

[0001] The embodiments described herein relate generally to equipment used in the manufacture of electronic devices, and more particularly to horizontal pre-clean (HPC) modules that may be used to clean the surface of a substrate in a semiconductor device manufacturing process. [Background technology]

[0002] Chemical mechanical polishing (CMP) is commonly used in the manufacture of high density integrated circuits to planarize or polish a layer of material deposited on a substrate. In a horizontal pre-clean (HPC) module used in the CMP process, a rotating buffing pad is pressed against a layer of material on the surface of the substrate. Material is removed throughout the layer of material through a combination of chemical and mechanical activity provided by a polishing fluid and the relative motion of the buffing pad and the substrate. Compared to conventional buffing pads made of materials such as microporous materials or filled or unfilled polymeric materials, buffing pads made of polyvinyl alcohol (PVA) materials provide high shear forces for chemical mechanical polishing due to their mechanical strength and abrasion resistance. In addition to being inherently thicker and larger than conventional materials, PVA materials are absorbent, flexible, and stretchable. Furthermore, larger buffing pads improve performance in chemical mechanical cleaning and reduce buffing time. However, buffing pads made from PVA material are inherently thicker and larger and may sag when supported by the pad carrier.

[0003]

[0003] Therefore, what is needed is a system and method for supporting large, thick, water-absorbent buffing pads while preventing the buffing pad from sagging. Summary of the Invention

[0004]

[0004] Several embodiments of the present disclosure provide a horizontal pre-clean module. The horizontal pre-clean module includes a chamber including a basin and a lid collectively defining a processing area, a rotatable vacuum table disposed in the processing area, the rotatable vacuum table including a substrate receiving surface, a pad conditioning station disposed proximate the rotatable vacuum table, a pad carrier placement arm having a first end and a second end distal from the first end, a pad carrier assembly coupled to the first end of the pad carrier placement arm, and an actuator coupled to the second end of the pad carrier placement arm, the actuator configured to pivot the pad carrier assembly between a first position on the rotatable vacuum table and a second position on the pad conditioning station. The pad carrier assembly includes a gimbal base and a pad carrier coupled to the gimbal base, the gimbal base and the pad carrier configured to support a buffing pad by a mechanical clamping mechanism and a suction clamping mechanism.

[0005]

[0005] Embodiments of the present disclosure also provide a pad carrier assembly for use in a horizontal pre-clean module. The pad carrier assembly includes a gimbal base and a pad carrier coupled to the gimbal base. The gimbal base and the pad carrier are configured to support a buffing pad by a mechanical clamping mechanism and a suction clamping mechanism.

[0006]

[0006] Embodiments of the present disclosure further provide a method of supporting a buffing pad in a horizontal pre-clean module, the method including mechanically clamping the buffing pad on a periphery of the buffing pad by a lip portion of a gimbal base and a tapered portion of a pad carrier, where the gimbal base and pad carrier are coupled and positioned in the horizontal pre-clean module, and the method further includes supporting the buffing pad with a suction clamping mechanism to prevent sagging of the buffing pad.

[0007]

[0007] In order to allow the above-mentioned features of the present disclosure to be understood in detail, the present disclosure briefly summarized above will now be described more particularly with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only typical embodiments of the present disclosure, and the present disclosure may admit of other equally effective embodiments, and therefore the accompanying drawings should not be considered as limiting the scope of the present disclosure. [Brief description of the drawings]

[0008] [Figure 1A] FIG. 1 is a schematic plan view of an exemplary chemical mechanical polishing (CMP) processing system that uses a horizontal pre-clean (HPC) module as described herein in accordance with one or more embodiments. [Figure 1B]

[0009] 1B is a top isometric view of an exemplary CMP processing system, which may correspond to the schematic diagram shown in FIG. 1A, in accordance with one or more embodiments. [Figure 1C]

[0010] 1B is a top view of the CMP processing system of FIG. 1B, which may correspond to the schematic diagram shown in FIG. 1A, in accordance with one or more embodiments. [Figure 2A]

[0011] FIG. 2 is a top isometric view of one side of an example HPC module in accordance with one or more embodiments. [Figure 2B]

[0012] FIG. 2B is another top isometric view of one side of the HPC module of FIG. 2A. [Figure 2C]

[0013] FIG. 2B is a top isometric view of another side of the HPC module of FIG. 2A. [Figure 3A]

[0014] FIG. 2 is a plan view of an example HPC module according to one or more embodiments. [Figure 3B]

[0015] FIG. 2 is a side cross-sectional view of an exemplary pad conditioning station according to one or more embodiments. [Figure 3C]

[0016] FIG. 1 illustrates a side cross-sectional view of an exemplary pad carrier placement arm according to one or more embodiments. [Figure 4A]

[0017] FIG. 2 is a side cross-sectional view of an exemplary gimbal base and pad carrier according to one or more embodiments. [Figure 4B]

[0018] 4B and 4C are top and side cross-sectional views of a pad carrier according to one or more embodiments. [Figure 4C] 4B and 4C are top and side cross-sectional views of a pad carrier according to one or more embodiments. [Figure 4D]

[0019] FIG. 2 illustrates a side cross-sectional view of a pad carrier according to one or more embodiments. [Figure 4E]

[0020] 4E and 4F are top views of a buffing pad according to one or more embodiments. [Figure 4H] 4E and 4F are top views of a buffing pad according to one or more embodiments. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009]

[0021] For ease of understanding, the same reference numbers have been used, where possible, to designate identical elements common to the figures. It is believed that elements and features of one embodiment may be beneficially incorporated in other embodiments without additional recitation.

[0010]

[0022] FIELD OF THE DISCLOSURE

[0002] The embodiments described herein relate generally to equipment used in the manufacture of electronic devices, and more particularly to horizontal pre-clean (HPC) modules that may be used to clean a surface of a substrate in a semiconductor device manufacturing process.

[0011]

[0023] Buffing pads made of polyvinyl alcohol (PVA) material provide high shear force for chemical mechanical polishing due to mechanical strength and abrasion resistance. However, PVA material is absorbent, flexible, and stretchable, in addition to being inherently thicker and larger than conventional materials. Therefore, buffing pads made of PVA material may sag when supported by a pad carrier.

[0012]

[0024] In several embodiments described herein, a pad carrier supports a large, thick, water-absorbent buffing pad while preventing the buffing pad from sagging via mechanical and suction clamping mechanisms during chemical-mechanical cleaning.

[0013]

[0025] FIG. 1A is a schematic plan view of an exemplary chemical mechanical polishing (CMP) processing system 100 using a horizontal pre-clean (HPC) module as described herein, according to one or more embodiments. FIG. 1B is a top isometric view of an exemplary CMP processing system 100, which may correspond to the schematic view shown in FIG. 1A, according to one or more embodiments. FIG. 1C is a top view of the CMP processing system 100 of FIG. 1B, which may correspond to the schematic view shown in FIG. 1A, according to one or more embodiments. In FIGS. 1B and 1C, certain parts of a housing, as well as certain other internal and external components, are omitted to more clearly show the HPC module in the CMP processing system 100. Here, the CMP processing system 100 includes a first portion 105 and a second portion 106 coupled to and integral with the first portion 105. The first portion 105 is a substrate polishing portion that includes multiple stations (not shown).

[0014]

[0026] The second portion 106 includes one or more post-CMP cleaning systems 110, a plurality of system loading stations 130, one or more substrate handlers (e.g., a first robot 124 and a second robot 150), one or more metrology stations 140, one or more location specific polishing (LSP) modules 142, one or more HPC modules 200, and one or more drying units 170. The HPC modules 200 are configured to process substrates 120 disposed in a substantially horizontal orientation (i.e., in the xy plane). In some embodiments, the second portion 106 optionally includes one or more vertical cleaning modules 112 configured to process substrates 120 disposed in a substantially vertical orientation (i.e., in the zy plane).

[0015]

[0027] Each LSP module 142 is typically configured to polish only a portion of the substrate surface using a polishing member (not shown) having a surface area smaller than the surface area of ​​the polished substrate 120. LSP modules 142 are often used after the substrate 120 has been polished with a polishing module to touch up (e.g., remove) additional material from a relatively small portion of the substrate.

[0016]

[0028] The metrology station 140 is used to measure the thickness of a material layer disposed on the substrate 120 before and / or after polishing, to inspect the substrate 120 after polishing to determine if the material layer has been cleared from its field surface, and / or to inspect the substrate surface for defects before and / or after polishing. In those embodiments, based on the results of the measurements or surface inspection obtained using the metrology station 140, the substrate 120 may be returned to the polishing pad for further polishing and / or may be directed to a different substrate processing module or station, such as a polishing module in the first portion 105 or the LSP module 142. As shown in FIG. 1A, the metrology station 140 and the LSP module 142 are located in the area of ​​the second portion 106 above (in the Z direction) one of the portions of the post-CMP cleaning system 110.

[0017]

[0029] The first robot 124 is arranged to transfer the substrate 120 to and from the plurality of system loading stations 130, for example, between the plurality of system loading stations 130 and the second robot 150 and / or between the post-CMP cleaning system 110 and the plurality of system loading stations 130. In some embodiments, the first robot 124 is arranged to transfer the substrate 120 between any of the system loading stations 130 and a processing system located proximate thereto. For example, in some embodiments, the first robot 124 can be used to transfer the substrate 120 between one of the system loading stations 130 and the metrology station 140.

[0018]

[0030] The second robot 150 is used to transfer the substrate 120 between the first portion 105 and the second portion 106. For example, here the second robot 150 is arranged to transfer the polished substrate 120 received from the first robot 124 to the first portion 105 for polishing inside the first portion 105. The second robot 150 is then used to transfer the polished substrate 120 from the first portion 105, for example from a transfer station (not shown) in the first portion 105 to one of the HPC modules 200 and / or between various stations and modules positioned in the second portion 106. Alternatively, the second robot 150 transfers the substrate 120 from a transfer station in the first portion 105 to one of the LSP module 142 or the metrology station 140. The second robot 150 may also transfer the substrate 120 from either the LSP module 142 or the metrology station 140 to the first portion 105 for further polishing within the first portion 105.

[0019]

[0031] The CMP processing system 100 of FIG. 1A includes two post-CMP cleaning systems 110 arranged on either side of the second robot 150. In FIG. 1A, at least some modules of one of the post-CMP cleaning systems 110, such as one or more vertical cleaning modules 112, are positioned below (in the Z direction) the metrology station 140 and the LSP module 142 and are therefore not shown. The metrology station 140 and the LSP module 142 are not shown in FIG. 1C. In some other embodiments, the CMP processing system 100 includes only one post-CMP cleaning system 110, where each of the post-CMP cleaning systems 110 includes an HPC module 200, one or more vertical cleaning modules 112 (e.g., brush or spray box), a drying unit 170, and a substrate handler 180 for transferring the substrate 120 therebetween. Here, each HPC module 200 is disposed in the second part 106 in a position proximate to the first part 105.

[0020]

[0032] Typically, the HPC module 200 receives the polished substrate 120 from the second robot 150 through a first opening (not shown) formed in a side panel of the HPC module 200, for example through a door or slit valve disposed in the side panel. The substrate 120 is received by the HPC module 200 in a horizontal orientation for placement on a horizontally disposed substrate support surface within the HPC module 200. The HPC module 200 then performs a pre-cleaning process (such as a buffing process) on the substrate 120 before the substrate 120 is transferred out of the HPC module 200 using the substrate handler 180.

[0021]

[0033] The substrate 120 is transferred out of the HPC module 200 through the second opening, where the opening 224 (FIG. 1B) is typically a horizontal slot disposed through a second side panel of the HPC module 200 that can be closed using a door (e.g., a slit valve). Thus, the substrate 120 is still in a horizontal orientation when it is transferred out of the HPC module 200. After the substrate 120 is transferred out of the HPC module 200, the substrate handler 180 pivots the substrate 120 to a vertical position for further processing in the vertical cleaning module 112 of the post-CMP cleaning system 110.

[0022]

[0034] In this embodiment, the HPC module 200 has a first end 202 facing the first portion 105 of the CMP processing system 100, a second end 204 facing opposite the first end 202, a first side 206 facing the second robot 150, and a second side 208 facing opposite the first side 206. The first and second sides 206, 208 extend in orthogonal directions between the first and second ends 202, 204.

[0023]

[0035] A plurality of vertical cleaning modules 112 are positioned within the second portion 106. The one or more vertical cleaning modules 112 are any one or combination of contact and non-contact cleaning systems (e.g., spray boxes and / or brush boxes) for removing polishing by-products from the surface of the substrate.

[0024]

[0036] The drying unit 170 is used to dry the substrate 120 after it has been processed by the vertical cleaning module 112 and before it is transferred to the system loading station 130 by the first robot 124. Here, the drying unit 170 is a horizontal drying unit. As such, the drying unit 170 is configured to receive the substrate 120 through an opening (not shown) while the substrate 120 is disposed in a horizontal orientation.

[0025]

[0037] Here, the substrate 120 is moved between the HPC module 200 and the vertical cleaning modules 112, between individual ones of the vertical cleaning modules 112, and between the vertical cleaning modules 112 and the drying unit 170 using the substrate handler 180.

[0026]

[0038] In embodiments herein, operation of the CMP processing system 100, including the substrate handler 180, is directed by a system controller 160. The system controller 160 includes a programmable central processing unit (CPU) 161 operable with memory 162 (e.g., non-volatile memory) and support circuits 163. The support circuits 163 are typically coupled to the CPU 161 and include cache, clock circuits, input / output subsystems, power supplies, and the like, and combinations thereof, coupled to the various components of the CMP processing system 100 to facilitate control of these components. The CPU 161 is one of any form of general-purpose computer processor used in industrial settings, such as a programmable logic controller (PLC), to control the various components and sub-processors of the processing system. The memory 162 coupled to the CPU 161 is non-transitory and is typically one or more of readily available memory, such as random access memory (RAM), read-only memory (ROM), a floppy disk drive, a hard disk, or any other form of local or remote digital storage.

[0027]

[0039] Typically, memory 162 takes the form of a non-transitory computer-readable storage medium (e.g., non-volatile memory) containing instructions that, when executed by CPU 161, facilitate operation of CMP processing system 100. The instructions in memory 162 take the form of a program product, such as a program that implements the methods of the present disclosure. The program code may conform to any one of a number of different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use in conjunction with a computer system. The program(s) of the program product define functions of several embodiments (including the methods described herein).

[0028]

[0040] Exemplary non-transitory computer readable storage media include, without limitation, (i) non-writable storage media in which information may be permanently stored (e.g., a read-only memory device in a computer, such as a CD-ROM drive, a flash memory, a ROM chip, or a CD-ROM disk readable by any type of solid-state non-volatile semiconductor memory device (e.g., a solid-state drive (SSD))), and (ii) writable storage media in which changeable information is stored (e.g., a floppy disk in a diskette drive or hard disk drive or any type of solid-state random access semiconductor memory). Such computer readable storage media, when carrying computer readable instructions that direct the functions of the methods described herein, are embodiments of the present disclosure. In some embodiments, the methods described herein, or portions thereof, are performed by one or more application specific integrated circuits (ASICs), field programmable gate arrays (FPGAs), or other types of hardware implementations. In some other embodiments, the substrate processing and / or handling methods described herein are performed by a combination of software routines, ASICs, FPGAs, and / or other types of hardware implementations. One or more system controllers 160 may be used with one or any combination of the various modular polishing systems described herein and / or their individual polishing modules.

[0029]

[0041] FIG. 2A is a top isometric view of a second side 208 of an example HPC module 200 that may be used in the CMP processing system 100 described herein. In FIG. 2A, a service access panel has been omitted to more clearly show the internal components of the HPC module 200. FIG. 2B is another top isometric view of the second side 208 of the HPC module 200 of FIG. 2A. In FIG. 2B, a top panel of the lid 216 has also been omitted to more clearly show the internal components of the HPC module 200. FIG. 2C is a top isometric view of the first side 206 of the HPC module 200 of FIG. 2A. In FIG. 2C, the lid 216 has been omitted to more clearly show the internal components of the HPC module 200.

[0030]

[0042] Generally, HPC module 200 includes a chamber 210 , a vessel 214 , and a lid 216 formed with a number of side panels that collectively define a processing area 212 .

[0031]

[0043] A first side 206 of the HPC module 200 facing the second robot 150 has a first side panel 218 formed thereon. The first side panel 218 includes a first substrate handler access door 220 that is used to place a substrate 120 on the rotatable reduced pressure table 230 with the second robot 150. A second end 204 of the HPC module 200 facing away from the first portion 105 has a second side panel 222 formed thereon. The second side panel 222 includes a second substrate handler access door 221 that is used to remove a substrate 120 from the rotatable reduced pressure table 230 with the substrate handler 180. A third side panel 226 is formed on the second side 208 of the HPC module 200. The third side panel 226 includes a service access panel opening 228. The symmetry of the first substrate handler access door 220 and the service access panel opening 228 formed in the panels on either side of the HPC module 200 beneficially provides a horizontal buffing module that can be installed on either side of the processing system 100, as shown in FIG. 1C.

[0032]

[0044] The HPC module 200 further includes a rotatable vacuum table 230 for vacuum chucking the substrate 120 disposed within the processing area 212, an annular substrate lift mechanism 270 disposed radially outward of the rotatable vacuum table 230, a pad adjustment station 280 disposed proximate to the rotatable vacuum table 230, and a pad carrier placement arm 300 movable between a first position above the rotatable vacuum table 230 and a second position above the pad adjustment station 280.

[0033]

[0045] The rotatable vacuum table 230, the annular substrate lift mechanism 270, the pad conditioning station 280, and the pad carrier placement arm 300 are each independently mounted to the vessel 214. The HPC module 200 further includes a rinse manifold 290 mounted to the vessel 214. A substrate center rinse bar 292 and one or more substrate spray bars 294 extend from the sides of the rinse manifold 290. The substrate center rinse bar 292 is used to direct a rinse fluid (e.g., cleaning fluid or water) toward a central area of ​​the rotatable vacuum table 230. The substrate spray bar 294 is used to direct a spray to one or more other areas of the rotatable vacuum table 230 (e.g., an outer perimeter area or sides of the rotatable vacuum table 230). The rinse manifold 290 is positioned toward a corner of the vessel 214, and the substrate center rinse bar 292 and substrate spray bar 294 extend along the second end 204 of the HPC module 200 inside the second side panel 222. In some embodiments, the rinse manifold 290 is adjacent the second side 208 (FIGS. 2A-2B). In some other embodiments, the rinse manifold 290 is adjacent the first side 206 (FIG. 2C). The HPC module 200 further includes a brush rinse 296 attached to the vessel 214. The brush rinse 296 is positioned adjacent the pad conditioning station 280 toward the first end 202 of the HPC module 200 for rinsing one or more components of the pad conditioning station 280.

[0034]

[0046] 3A is a plan view of the HPC module 200 of FIG. 2C. An annular substrate lift mechanism 270 is disposed radially outward of the rotatable reduced pressure table 230. The lift mechanism 270 includes a plurality of substrate contacts 272 disposed proximate to the periphery of the rotatable reduced pressure table 230. Each of the substrate contacts 272 is an upwardly facing shoulder formed on a substrate hoop 274 surrounding the chuck plate 232. The lift mechanism 270 is configured such that one of the plurality of substrate contacts 272 contacts the substrate 120 prior to the other of the plurality of substrate contacts 272 when lifting the substrate 120 from the substrate receiving surface 266 of the rotatable reduced pressure table 230. The annular substrate lift mechanism 270 cooperates with the previously described reduced pressure venting and optional nitrogen purge to remove the substrate 120 from the chuck plate 232. Beneficially, use of the substrate lift mechanism 270 allows for quicker dechuck of the substrate 120 compared to just venting and an optional nitrogen purge.

[0035]

[0047] FIG. 3B is a side cross-sectional view of an exemplary pad conditioning station 280 that may be used in the HPC module 200 of FIG. 3A. The pad conditioning station 280 is disposed proximate to the rotatable vacuum table 230. The pad conditioning station 280 includes a conditioning brush 282 that faces away from the vessel 214. In some embodiments, the conditioning brush 282 includes a fibrous material. In some embodiments, the fibers are formed from nylon or another similar material. The conditioning brush 282 is coupled to a rotatable brush shaft 284. The brush shaft 284 extends through the vessel 214 that is fluidly coupled to a conditioning fluid source (not shown). The brush shaft 284 is configured to deliver a conditioning fluid (e.g., deionized water) to a spray nozzle 286 disposed proximate to the conditioning brush 282. During operation of the pad conditioning station 280, the conditioning brush 282 is rotated by the brush shaft 284. During rotation, conditioning fluid flows through the brush shaft 284 to the spray nozzles 286, thereby wetting the conditioning brushes 282 and facilitating the conditioning process.

[0036]

[0048] FIG. 3C is a side cross-sectional view of an exemplary pad conditioning arm 300 that may be used in the HPC module 200 of FIG. 3A. The pad carrier placement arm 300 is disposed proximate to the rotatable vacuum table 230 and the pad conditioning station 280. The distal end 302 of the pad carrier placement arm 300 includes a pad carrier assembly 304 for supporting a buffing pad 306 at a lower end of the vertically movable pad carrier assembly 304. The pad carrier assembly 304 includes a head motor 308 for rotating the buffing pad 306 about an axis c2 substantially aligned in the direction of gravity. The pad carrier assembly 304 includes a gimbal base 310 coupled to the head motor 308 by a spherical bearing 312, allowing the buffing surface of the pad carrier assembly 304 to pivot relative to a plane perpendicular to the axis c2. The pad carrier assembly 304 further includes a pad carrier 314 coupled to the gimbal base 310. In some embodiments, the pad carrier 314 is sized to support a buffing pad 306 having a diameter of approximately 134 mm, which is larger than conventional buffing pads used in pre-clean modules. In some embodiments, the pad carrier positioning arm 300 of the present disclosure supports a larger buffing pad 306 compared to conventional pre-clean modules.

[0037]

[0049] 4A is a side cross-sectional view of an exemplary gimbal base 310 and pad carrier 314 that may be used in the pad carrier assembly 304 of FIG. 3C. In some embodiments, the gimbal base 310 includes a magnet 316 and the pad carrier 314 includes a magnet 318, whereby the gimbal base 310 and the pad carrier 314 are coupled via magnetic forces. The gimbal base 310 and the pad carrier 314 are aligned via a location pin 320.

[0038]

[0050] In some embodiments, the buffing pad 306 is formed of a polyvinyl alcohol (PVA) material. The PVA material is hydrophilic and can absorb and retain water. The PVA material is stretchy, flexible, and pliable when wet, and has mechanical strength and abrasion resistance. Compared to conventional materials used as buffing pads, such as microporous materials or filled or unfilled polymeric materials, the PVA material provides high shear forces for chemical mechanical cleaning. The buffing pad 306 formed of the PVA material has a diameter of about 134 mm, which is larger than the diameter of a typical buffing pad formed of conventional materials, which has a diameter of about 67 mm. The larger buffing pad improves performance in chemical mechanical cleaning and reduces buffing time. Additionally, the buffing pad 306 formed of the PVA material is thicker than a typical buffing pad formed of conventional materials. The pad carrier 314 is designed to support a large, thick, absorbent buffing pad 306 while preventing the buffing pad 306 from sagging via mechanical and suction clamping mechanisms.

[0039]

[0051] The gimbal base 310 further includes a lip 322 at the periphery of the gimbal base 310. The pad carrier 314 includes a tapered portion 324 at the periphery of the pad carrier 314. The tapered portion 324 tapers from the lower surface of the pad carrier 314 to the upper surface facing the gimbal base 310. That is, the tapered portion 324 is substantially parallel to the inner surface of the lip 322 of the gimbal base 310. The lip 322 of the gimbal base 310 and the tapered portion 324 of the pad carrier 314 together mechanically clamp the buffing pad 306 along the periphery of the buffing pad 306. The pad carrier 314 has a diameter of about 128 mm at the lower surface and a thickness of about 4.2 mm. The pad carrier 314 has a diameter at the upper surface that is about 4.6 mm smaller than the diameter of the pad carrier 314 at the lower surface.

[0040]

[0052] 4B and 4C are plan and side cross-sectional views of the pad carrier 314 according to one or more embodiments. Also shown in FIG. 4C is a portion of the gimbal base 310 and the buffing pad 306. The pad carrier 314 includes a central slot 326 through which a rod 328 is pressed into the buffing pad 306. The slot 326 is circular, has a diameter of about 15 mm, and is negatively tapered from the side facing the gimbal base 310 to the side facing the buffing pad 306 (i.e., the diameter at the side facing the gimbal base 310 is larger than the diameter at the side facing the buffing pad 306). The rod 328 is cylindrical and has a diameter slightly larger than the diameter of the slot 326, such that the rod 328 is compressed when inserted into the slot 326. The rod 328, pad carrier 314, and buffing pad 306 are sealed together, creating a lower pressure area inside compared to the atmospheric pressure outside. The atmospheric pressure presses against the lower pressure area surrounded by the rod 328, pad carrier 314, and buffing pad 306, creating a suction clamping force for the buffing pad 306. The gimbal base 310 and pad carrier 314 may be made of a plastic or polymer, such as polyetheretherketone (PEEK). The buffing pad 306 may be securely supported by the pad carrier 314 through a mechanical clamping mechanism by the lip 322 of the gimbal base 310 and the periphery of the pad carrier 314, and a suction clamping mechanism by the rod 328 and buffing pad 306. In FIG. 4B and FIG. 4C, one circular slot 326 and one cylindrical rod 328 are shown. However, the pad carrier 314 may have multiple slots 326. Each slot 328 receives one rod 328 to create a greater suction clamping force on the buffing pad 306. The rods 328 can be any shape and the slots have a shape that matches the shape of the rods 328. The rods 328 and pad carrier 314 thereby create a low pressure on their interior side.

[0041]

[0053] FIG 4D is a side cross-sectional view of a pad carrier 314 according to a second embodiment. Also shown in FIG 4D is a portion of the gimbal base 310 and the buffing pad 306. Like the first embodiment shown in FIG 4C, the pad carrier 314 includes a central slot 326 through which a rod 328 is pressed into the buffing pad 306. In the second embodiment, a backing 330 is disposed on a surface of the pad carrier 314 that contacts the buffing pad 306. The backing 330 may be formed of plastic and adds rigidity to the buffing pad 306, further preventing the buffing pad 306 from sagging.

[0042]

[0054] 4E and 4F are top views of a buffing pad 306 according to a third embodiment. In the third embodiment, the buffing pad 306 has raised contact features formed on a surface of the buffing pad 306 facing the pad carrier 314. The pad carrier 314 has a number of slots 326 into which one of the contact features engages. The raised contact features of the buffing pad 306 and the pad carrier 314 are sealed against each other, creating a lower pressure area on the inside compared to the atmospheric pressure outside, creating a suction clamping force on the buffing pad 306. In FIG. 4E, the raised contact features are a number of posts 332, each of which engages in one slot 326 of the pad carrier 314. In FIG. 4F, the contact features include posts 334 that engage in circular slots 326 that match the shape of the posts 334, and a number of radial spokes 336. Each radial spoke 336 fits within a rectangular slot 326 that matches the shape of the radial spoke 336 .

[0043]

[0055] In some embodiments described herein, a pad carrier supports a large, thick, absorbent buffing pad, such as a buffing pad made of polyvinyl alcohol (PVA) material, while a mechanical clamping mechanism and a suction clamping mechanism prevent the buffing pad from sagging during chemical mechanical cleaning. Buffing pads made of polyvinyl alcohol (PVA) material provide high shear forces for chemical mechanical polishing due to their mechanical strength and abrasion resistance. The large size of the buffing pad provides improved cleaning performance.

[0044]

[0056] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of the disclosure being defined by the following claims.

Claims

1. 1. A horizontal pre-wash module comprising: a chamber comprising a vessel and a lid that collectively define a processing area; a rotatable vacuum table disposed within the processing area, the rotatable vacuum table including a substrate receiving surface; a pad conditioning station disposed adjacent said rotatable vacuum table; a pad carrier placement arm having a first end and a second end distal from the first end; a pad carrier assembly coupled to the first end of the pad carrier placement arm; and an actuator coupled to the second end of the pad carrier placement arm, the actuator configured to pivot the pad carrier assembly between a first position above the rotatable vacuum table and a second position above the pad conditioning station; The horizontal pre-clean module, wherein the pad carrier assembly comprises a gimbal base and a pad carrier coupled to the gimbal base, the gimbal base and the pad carrier configured to support a buffing pad by a mechanical clamping mechanism and a suction clamping mechanism.

2. the gimbal base includes a plurality of magnets; the pad carrier comprises a plurality of magnets; The horizontal pre-clean module of claim 1 , wherein the gimbal base and the pad carrier are coupled via magnetic forces.

3. 2. The horizontal pre-clean module of claim 1, wherein the gimbal base includes a lip on a periphery of the gimbal base and the pad carrier includes a tapered portion on a periphery of the pad carrier, the lip and the pad carrier mechanically clamping the buffing pad along a periphery of the buffing pad.

4. 2. The horizontal pre-clean module of claim 1, wherein the pad carrier has a slot for receiving a rod configured to be pressed into the buffing pad to provide the suction clamping mechanism to the buffing pad supported by the pad carrier.

5. 10. The horizontal pre-clean module of claim 1, wherein the pad carrier comprises a plastic backing that contacts the buffing pad to provide rigidity to the buffing pad supported by the pad carrier.

6. 2. The horizontal pre-clean module of claim 1, wherein the pad carrier has a plurality of slots that receive raised features formed on a surface of the buffing pad to provide the suction clamping mechanism to the buffing pad supported by the pad carrier.

7. 1. A pad carrier assembly for use in a horizontal pre-clean module, comprising: Gimbal base, and a pad carrier coupled to the gimbal base; A pad carrier assembly, wherein the gimbal base and the pad carrier are configured to support a buffing pad by a mechanical clamping mechanism and a suction clamping mechanism.

8. the gimbal base includes a plurality of magnets; the pad carrier comprises a plurality of magnets; The pad carrier assembly of claim 7 , wherein the gimbal base and the pad carrier are coupled via magnetic forces.

9. 8. The pad carrier assembly of claim 7, wherein the gimbal base includes a lip portion on a periphery of the gimbal base and the pad carrier includes a tapered portion on a periphery of the pad carrier, the lip portion and the pad carrier mechanically clamping the buffing pad along a periphery of the buffing pad.

10. 8. The pad carrier assembly of claim 7, wherein the pad carrier has a slot for receiving a rod configured to be pressed into the buffing pad to provide the suction clamping mechanism to the buffing pad supported by the pad carrier.

11. The pad carrier assembly of claim 7 , wherein the pad carrier comprises a plastic backing that contacts the buffing pad to provide rigidity to the buffing pad supported by the pad carrier.

12. 8. The pad carrier assembly of claim 7, wherein the pad carrier has a plurality of slots that receive raised features formed on a surface of the buffing pad to provide the suction clamping mechanism to the buffing pad supported by the pad carrier.

13. 1. A method for supporting a buffing pad in a horizontal pre-clean module, comprising: mechanically clamping the buffing pad on a periphery of the buffing pad by a lip portion of a gimbal base and a tapered portion of a pad carrier, the gimbal base and the pad carrier being coupled and positioned in a horizontal pre-clean module; and supporting the buffing pad with a suction clamping mechanism to prevent sagging of the buffing pad.

14. The method of claim 13 , wherein the buffing pad comprises a polyvinyl alcohol (PVA) material.

15. The method of claim 13 , wherein the suction clamping mechanism comprises a rod that passes through a slot in the pad carrier and is forced into the buffing pad.

16. The method of claim 13 further comprising placing a plastic backing on a surface of the pad carrier, the plastic backing contacting the buffing pad.

17. 14. The method of claim 13, wherein the suction clamp mechanism comprises a plurality of slots and raised features formed on a surface of the buffing pad, each of the plurality of slots receiving one of the raised features.

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