Reduced pressure drying device

The vacuum drying apparatus addresses uneven drying and solvent accumulation by employing a temperature gradient cooling system and adjustable substrate distance, ensuring uniform film drying and high productivity.

JP7612648B2Active Publication Date: 2025-01-14SCREEN HOLDINGS CO LTD
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Patent Information

Application Number
JP2022204186
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-12-21
Publication Date
2025-01-14
Estimated Expiration
2042-12-21

AI Technical Summary

Technical Problem

Vacuum drying apparatuses experience uneven drying of coating films due to solvent vapor retention near the center of the coating film, leading to variations in film thickness and potential accumulation of liquid solvent on the cooling surface, which can impair product quality and decrease productivity.

Method used

A vacuum drying apparatus with a cooling section that has a temperature gradient, where the outer region is warmer than the opposing region, combined with a mechanism to adjust the distance between the substrate and the cooling surface, to facilitate solvent evaporation and prevent excessive accumulation.

Benefits of technology

The solution ensures uniform drying of the coating film, prevents solvent accumulation, and maintains productivity by promoting rapid solvent evaporation, thus avoiding quality issues and reducing processing time.

✦ Generated by Eureka AI based on patent content.

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Abstract

To provide a technique for avoiding an adverse effect caused by excessive accumulation of a liquid solvent on a cooling surface of a cooling part while avoiding excessive deterioration of productivity.SOLUTION: A decompression dryer 1 for drying a coating film 90 applied on an upper surface of a substrate 9 includes: a chamber 10 that accommodates the substrate 9; a support part 20 that supports the substrate 9 in the chamber 10; a decompression mechanism 30 that sucks gas from the chamber 10 to lower pressure in the chamber 10; and a cooling part 40 that cools a cooling surface 40a opposing to the upper surface of the substrate 9 supported by the support part 20 and larger than the substrate 9. The cooling surface 40a of the cooling part 40 includes: an opposing region RC opposing to a region AC in which the coating film 90 of the substrate 9 can be formed in the thickness direction of the substrate 9; and an outer region RO on the outer side of the opposing region RC. The cooling part 40 is configured so that a temperature of the outer region RO becomes higher than that of the opposing region RC.SELECTED DRAWING: Figure 1
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Description

[Technical field]

[0001] The present disclosure relates to a vacuum drying apparatus. [Background technology]

[0002] Conventionally, reduced pressure drying apparatuses for reducing pressure and drying coating films such as photoresist applied to various substrates are known. The various substrates include, for example, glass substrates for forming various devices, ceramic substrates, semiconductor wafers, electronic device substrates, and printing plates for printing. The various devices include, for example, semiconductor devices, display panels, solar cell panels, magnetic disks, and optical disks. The display panels include, for example, liquid crystal display panels, organic electroluminescence (EL) display panels, plasma display panels, and field emission displays.

[0003] When drying a coating film using a reduced pressure drying device, for example, with a substrate supported by multiple pins in the chamber, the chamber is evacuated by a vacuum pump through an exhaust port at the bottom of the chamber. This exhaust reduces the pressure in the chamber. When the pressure in the chamber is reduced, the solvent in the coating film evaporates, allowing the coating film to be dried. Then, for example, when the degree of vacuum reaches a predetermined value, exhaust from the chamber is stopped, and gas is supplied into the chamber to return the chamber to atmospheric pressure. For example, an inert gas such as nitrogen gas or air is used as the gas.

[0004] In the case of a reduced-pressure drying apparatus, if the pressure in the chamber is suddenly reduced in the early stages of decompression, bumping may occur in the coating film on the substrate. If bumping occurs, for example, the thickness of the coating film may vary.

[0005] The reduced-pressure drying apparatus described in Patent Document 1 can suppress the occurrence of such bumping. The reduced-pressure drying apparatus described in Patent Document 1 is provided with a lifting unit that raises and lowers support pins that support the substrate. The lifting unit raises the support pins at the beginning of the decompression, thereby narrowing the gap between the substrate and the ceiling surface of the chamber. This reduces the rate at which the pressure between the substrate and the ceiling surface decreases, making it possible to suppress the occurrence of bumping. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Patent Publication No. 2022-086766 Summary of the Invention [Problem to be solved by the invention]

[0007] However, when the distance between the substrate and the ceiling surface becomes narrow, the solvent vapor from the coating film on the substrate is likely to remain in the space between the substrate and the ceiling surface. In particular, the solvent vapor from the vicinity of the center of the coating film is likely to remain. That is, the solvent vapor from the vicinity of the periphery of the coating film can flow outward in the horizontal direction due to concentration diffusion, but remains as it is near the center of the coating film because the concentration gradient is small near the center of the coating film. For this reason, the solvent in the coating film is more likely to evaporate in the periphery than in the center. That is, this leads to uneven drying of the coating film. The uneven drying causes a problem of, for example, variation in the thickness of the dried coating film.

[0008] In order to solve the above problem, the present inventor has been studying a technique for cooling the ceiling surface to form a cooling surface. According to this technique, the liquid solvent condensed on the cooling surface can suppress the above drying unevenness. On the other hand, the present inventor has found a new problem that liquid solvent may accumulate excessively on the cooling surface if the ceiling surface is simply made into a cooling surface. In particular, if this accumulation occurs in a place where it is difficult to evaporate the solvent, it takes a long time to remove it by evaporating it, resulting in a decrease in productivity. On the other hand, if it is not removed appropriately, the accumulated liquid solvent may have a negative effect on the implementation of reduced pressure drying. For example, if it falls on a substrate, the quality of the product using the substrate is impaired. In particular, in industrial applications, it is usually necessary to repeatedly operate the reduced pressure drying device without leaving a long interval, and as a result, the liquid solvent is likely to accumulate excessively on the cooling surface as the operation is repeated, even if the amount of accumulation is at least in one operation.

[0009] The present disclosure has been made in consideration of the above-mentioned problems, and aims to provide a technology that avoids adverse effects caused by excessive accumulation of liquid solvent on the cooling surface of the cooling section while avoiding a decrease in productivity. [Means for solving the problem]

[0010] A first aspect is a reduced-pressure drying apparatus for drying a coating film applied to an upper surface of a substrate, the apparatus comprising: a chamber for accommodating the substrate; a support part for supporting the substrate within the chamber; a reduced-pressure mechanism for sucking gas from the chamber to reduce the pressure within the chamber; and a cooling part for cooling a cooling surface that faces the upper surface of the substrate supported by the support part and is larger than the substrate, the cooling surface of the cooling part having an opposing region that faces an area of ​​the substrate where the coating film can be formed in the thickness direction of the substrate, and an outer region outside the opposing region, and the cooling part is configured so that the temperature of the outer region is higher than the temperature of the opposing region.

[0011] A second aspect is a reduced pressure drying apparatus according to the first aspect, wherein the cooling section has a path through which a refrigerant flows to cool the cooling surface, an inlet through which the refrigerant is introduced into the path, and an outlet through which the refrigerant is discharged from the path, and in a planar view, the path of the cooling section spans the opposing region and the outer region, the inlet of the cooling section is located in the opposing region, and the outlet of the cooling section is located in the outer region.

[0012] A third aspect is the reduced pressure drying apparatus according to the second aspect, wherein the path of the cooling section extends in a spiral shape in a plan view.

[0013] A fourth aspect is a reduced pressure drying apparatus according to the second or third aspect, wherein the cooling section has an insulating member located in the outer region in a planar view, and the insulating member is located so as to separate the path and the cooling surface.

[0014] A fifth aspect is the reduced pressure drying apparatus according to any one of the first to fourth aspects, wherein the cooling section has a heater located in the outer region in a plan view. Effect of the Invention

[0015] According to each of the above aspects, the temperature of the outer region outside the facing region is made higher than the temperature of the facing region facing the region where the coating film of the substrate can be formed in the thickness direction of the substrate on the cooling surface of the cooling unit. This allows the desired solvent to be coagulated in the facing region, while suppressing the accumulation of liquid solvent in the outer region. According to the inventor's study, the solvent is more likely to evaporate quickly in the facing region than in the outer region, so as long as the accumulation of liquid solvent in the outer region is suppressed, it is not necessary to spend a long time on a process to prevent excessive accumulation of liquid solvent. Therefore, it is possible to avoid a decrease in productivity and to avoid adverse effects caused by excessive accumulation of liquid solvent on the cooling surface of the cooling unit. [Brief description of the drawings]

[0016] [Figure 1]1 is a diagram illustrating an example of a vertical cross section of a reduced-pressure drying apparatus according to a first embodiment. [Diagram 2] 1 is a diagram illustrating an example of a cross section of a reduced-pressure drying apparatus according to a first embodiment. [Diagram 3] 1 is a diagram showing an example of a vertical cross section of a reduced-pressure drying apparatus according to a first embodiment. [Figure 4] FIG. 2 is a perspective view showing an example of a substrate. [Diagram 5] FIG. 2 is a diagram showing an example of a vertical cross section of a portion of a substrate. [Figure 6] 1 is a diagram illustrating an example of a top surface of a reduced-pressure drying apparatus according to a first embodiment. [Figure 7] 4 is a block diagram conceptually showing functions realized in a control unit. FIG. [Figure 8] 5 is a flowchart showing an example of the flow of reduced pressure drying processing according to the first embodiment. [Figure 9] FIG. 4 is a diagram illustrating an example of a state inside a chamber during a first depressurization process. [Figure 10] 4 is an enlarged view showing the vicinity of the cooling surface and the substrate in the chamber during the first depressurization process. FIG. [Figure 11] FIG. 13 is an enlarged view showing a top plate portion and a substrate of a chamber according to a comparative structure. [Figure 12] FIG. 13 is a diagram showing an example of a concentration distribution of solvent vapor in an upper space in a comparative structure. [Figure 13] FIG. 13 is a diagram showing an example of a concentration distribution of solvent vapor in the upper space when the cooling unit is cooling. [Figure 14] 11 is a diagram illustrating an example of a state inside the chamber during a second depressurization process. FIG. [Figure 15] FIG. 10 is a diagram showing a comparative example of the processing state shown in FIG. [Figure 16] FIG. 15 is a diagram showing a comparative example of the processing state shown in FIG. 14. [Figure 17] FIG. 11 is a diagram illustrating an example of a vertical cross section of a reduced pressure drying apparatus according to a second embodiment. [Figure 18] FIG. 11 is a diagram illustrating an example of the upper surface of a reduced-pressure drying apparatus according to a second embodiment. [Figure 19] FIG. 11 is a diagram illustrating an example of a vertical cross section of a reduced-pressure drying apparatus according to a third embodiment. [Figure 20] FIG. 11 is a diagram illustrating an example of the upper surface of a reduced-pressure drying apparatus according to a third embodiment. [Figure 21] FIG. 13 is a diagram illustrating an example of the upper surface of a reduced-pressure drying apparatus according to a fourth embodiment. [Figure 22] FIG. 13 is a diagram illustrating an example of a vertical cross section of a reduced-pressure drying apparatus according to a fifth embodiment. [Diagram 23] 13 is a flowchart showing an example of the flow of reduced-pressure drying processing according to the fifth embodiment. [Figure 24] FIG. 13 is a diagram illustrating an example of a vertical cross section of a reduced-pressure drying apparatus according to a sixth embodiment. [Diagram 25] FIG. 13 is a diagram illustrating an example of a vertical cross section of a reduced-pressure drying apparatus according to a seventh embodiment. [Figure 26] FIG. 13 is a diagram illustrating an example of a vertical cross section of a reduced-pressure drying apparatus according to an eighth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] Hereinafter, an embodiment and various modified examples of the present disclosure will be described with reference to the drawings. In the drawings, parts having similar configurations and functions are given the same reference numerals, and duplicated explanations will be omitted in the following description. The drawings are shown diagrammatically, and the sizes and positional relationships of various structures in each drawing are not accurately illustrated. In addition, in this specification, the downward direction is the direction of gravity, and the upward direction is the direction opposite to the direction of gravity. The upward and downward directions are also collectively referred to as the up-down direction. Planar view means a planar layout. The planar layout of some member is a two-dimensional layout obtained by projecting the member onto a plane. The plane may be a surface perpendicular to the up-down direction.

[0018] <1. First embodiment> FIG. 1 is a diagram that shows an example of a vertical section of the reduced pressure drying apparatus 1 according to the first embodiment. FIG. 2 is a diagram that shows an example of a transverse section of the reduced pressure drying apparatus 1 according to the first embodiment. FIG. 3 is a diagram that shows an example of a vertical section of the reduced pressure drying apparatus 1 according to the first embodiment. The vertical section in FIG. 1 and the vertical section in FIG. 3 show the configuration of the reduced pressure drying apparatus 1 when viewed from directions that are different by about 90 degrees. In FIG. 3, in order to avoid complicating the drawing, configurations related to a reduced pressure mechanism 30, an air supply unit 60, a pressure gauge 70, and a control unit 80, which will be described later, are omitted for convenience.

[0019] The reduced pressure drying apparatus 1 is an apparatus for drying a coating film 90 (see FIG. 5) formed on the upper surface of a substrate 9.

[0020] The substrate 9 may be, for example, a glass substrate, a semiconductor wafer, or a ceramic substrate. The substrate 9 is, for example, a flat substrate having a first surface F1 (see FIG. 4 and FIG. 5) as a first main surface and a second surface F2 (see FIG. 5) as a second main surface opposite to the first surface F1. In the reduced pressure drying apparatus 1, the first surface F1 of the substrate 9 is the upper surface of the substrate 9, and the second surface F2 of the substrate 9 is the lower surface of the substrate 9. Here, a specific example in which a rectangular glass substrate is applied to the substrate 9 will be described as appropriate. A coating film 90 is partially formed on the first surface F1 of the substrate 9 by, for example, applying a treatment liquid containing an organic material and a solvent in advance. The treatment liquid is applied, for example, by a slit coater or an inkjet device. The treatment liquid may be, for example, a liquid containing a polyimide precursor and a solvent (also called a PI liquid) or a coating liquid such as a resist liquid. The polyimide precursor may be, for example, a polyamic acid (polyamic acid). For example, NMP (N-Methyl-2-Pyrrolidone) is used as the solvent. In addition, for example, when the reduced pressure drying apparatus 1 is applied to a manufacturing process of an organic EL display, a mode may be adopted in which the coating film 90 becomes a hole injection layer, a hole transport layer, or a light emitting layer of an organic EL display panel by being dried in the reduced pressure drying apparatus 1.

[0021] FIG. 4 is a perspective view showing an example of the substrate 9. FIG. 5 is a view showing an example of a vertical cross section of a portion of the substrate 9. As shown in FIG. 4, the substrate 9 has, for example, a rectangular shape with different vertical and horizontal lengths in a plan view. The substrate 9 may have a plurality of regions (also called formation regions) A1 used to actually form products such as devices arranged thereon. In the example of FIG. 4, in a top view, four rectangular formation regions A1 are arranged in a matrix of two rows and two columns on the substrate 9. However, the shape, number, and arrangement of the formation regions A1 are not limited to this example. The coating film 90 is formed according to a desired pattern on the upper surface of each of the formation regions A1 by a slit coater, an inkjet device, or the like in a coating process prior to the reduced pressure drying process by the reduced pressure drying device 1. For example, a circuit pattern is applied to the desired pattern. Note that in FIG. 4, the coating film 90 is shown with the pattern omitted. 5, the first surface F1 as the upper surface of each of the formation regions A1 may have a region A3 covered with the coating film 90 (also referred to as a covered region) and an exposed region A4 not covered with the coating film 90 (also referred to as an exposed region). The region around the formation region A1 and between adjacent formation regions A1 of the substrate 9 is a region A2 (also referred to as a non-coated region) where the coating film 90 is not formed on the first surface F1 as the upper surface. The non-coated region A2 is also an exposed region A4 not covered with the coating film 90.

[0022] The first surface F1 of the substrate 9 has an area AC where the coating film 90 can be formed. The area AC may be defined as an area including the formation area A1, for example, as shown in Fig. 4, as an area having a minimum rectangular shape including the formation area A1. When it is difficult to determine which range of the first surface F1 is the area AC, the entire first surface F1 may be considered as the area AC, but typically, it is difficult to fully utilize the substrate 9 up to the edge of the first surface F1 for the purpose of forming a product such as a device, and the first surface F1 has a margin area AO around the area AC.

[0023] <1-1. Overview of the configuration of the reduced pressure drying device> Next, a description will be given of an outline of the configuration of the reduced pressure drying apparatus 1. As shown in Fig. 1 and Fig. 2, the reduced pressure drying apparatus 1 includes a chamber 10, a support section 20, a reduced pressure mechanism 30, a first lifting section 100, a cooling section 40, and a control section 80.

[0024] The chamber 10 is a portion for accommodating the substrate 9. The support portion 20 is provided in the chamber 10 and supports the substrate 9 in a horizontal position. The horizontal position here means that the thickness direction of the substrate 9 is aligned along the vertical direction.

[0025] The pressure reducing mechanism 30 sucks in the gas within the chamber 10 and exhausts the gas to the outside of the chamber 10. This suction reduces the pressure within the chamber 10. As the pressure within the chamber 10 decreases, the solvent in the coating film 90 on the first surface F1, which serves as the upper surface of the substrate 9, evaporates, and the coating film 90 dries.

[0026] The cooling unit 40 cools the cooling surface 40a. The cooling surface 40a faces the first surface F1 as the upper surface of the substrate 9 supported by the support unit 20. The cooling unit 40 cools the cooling surface 40a, thereby lowering the temperature of the cooling surface 40a. The cooling surface 40a faces the upper surface of the substrate 9 supported by the support unit 20 and is larger than the substrate 9. In other words, in a plan view, the cooling surface 40a encompasses the upper surface of the substrate 9. The cooling surface 40a has an edge ED. In the example of FIG. 1, the cooling surface 40a corresponds to the ceiling surface of the chamber 10. The cooling surface 40a is, for example, a horizontal flat surface.

[0027] The vapor of the solvent (hereinafter referred to as solvent vapor) evaporated from the coating film 90 on the first face F1 as the upper face of the substrate 9 may be cooled and condensed on the cooling face 40a. As a result, liquid solvent 91 (see also FIG. 9 described later) may adhere to the cooling face 40a. This condensation can suppress the occurrence of uneven drying of the coating film 90, as described in detail later. In addition, the solvent 91 adhered to the cooling face 40a can also be evaporated by further reducing the pressure inside the chamber 10. This condensation and evaporation will also be described in detail later.

[0028] In the example of FIG. 1, the first lifting section 100 lifts and lowers the support section 20. Specifically, the first lifting section 100 lifts and lowers the support section 20 between an upper position H1 and a lower position H2. The upper position H1 is the position of the support section 20 when the interval between the substrate 9 supported by the support section 20 and the cooling surface 40a is a first interval. In the example of FIG. 1, the support section 20 and the substrate 9 positioned at the upper position H1 are shown by imaginary lines. The lower position H2 is the position of the support section 20 when the interval between the substrate 9 supported by the support section 20 and the cooling surface 40a is a second interval wider than the first interval. That is, the first lifting section 100 lifts and lowers the support section 20 between a first state in which the interval between the substrate 9 and the cooling surface 40a is a first interval, and a second state in which the interval between the substrate 9 and the cooling surface 40a is a second interval. The first interval is, for example, 10 mm or less, and a more specific example is about 5 mm. The second interval may be, for example, 5 times or more, or 10 times or more, the first interval. To explain a specific example of a numerical value, the second interval is, for example, 50 mm or more, and as a more specific example, about 80 mm.

[0029] As will be described in detail later, in the initial stage of decompression, the first lifting section 100 positions the support section 20 at the raised position H1. Thereafter, the first lifting section 100 lowers the support section 20 to the lowered position H2. The technical significance of this will also be described in detail later.

[0030] In the example of FIG. 1 and FIG. 2, the reduced pressure drying apparatus 1 further includes an air supply unit 60, a bottom surface straightening plate 50, a side surface straightening plate 51, and a pressure gauge 70. The air supply unit 60 supplies gas into the chamber 10. This allows the pressure in the chamber 10 to be returned to atmospheric pressure. The bottom surface straightening plate 50 and the side surface straightening plate 51 are provided in the chamber 10 and straighten the air flow in the chamber 10. The pressure gauge 70 measures the pressure in the chamber 10 and outputs an electric signal indicating the measurement result to the control unit 80. The control unit 80 controls various components of the reduced pressure drying apparatus 1 described above. For example, the control unit 80 controls the decompression mechanism 30 based on the pressure measured by the pressure gauge 70 to adjust the pressure in the chamber 10. In addition, the control unit 80 controls the cooling unit 40 to adjust the temperature of the cooling surface 40a and the first lifting unit 100 to adjust the position of the support unit 20.

[0031] Next, a detailed example of each component of the reduced pressure drying apparatus 1 will be described.

[0032] <1-1-1. Chamber 10> A pressure-resistant vessel having an internal space 10s for accommodating a substrate 9 is applied to the chamber 10. The chamber 10 is fixed on, for example, an apparatus frame (not shown). The shape of the chamber 10 is, for example, a flat rectangular parallelepiped. The chamber 10 has, for example, a substantially square bottom plate portion 11, four side wall portions 12, and a substantially square top plate portion 13. The four side wall portions 12 connect, for example, four end sides of the bottom plate portion 11 and four end sides of the top plate portion 13 in the up-down direction. For example, one of the four side wall portions 12 is provided with a loading / unloading port 14 and a gate portion (also called a gate valve) 15 for opening and closing the loading / unloading port 14. The gate portion 15 is, for example, linked or connected to an opening / closing drive portion 16. In FIG. 3, the opening / closing drive portion 16 is conceptually shown to avoid complication of the drawing. A driving device such as an air cylinder is applied to the opening / closing drive unit 16. Here, for example, by the operation of the opening / closing drive unit 16, the gate unit 15 can move between a position where the loading / unloading opening 14 is closed (also referred to as a closed position) and a position where the loading / unloading opening 14 is open (also referred to as an open position).

[0033] Here, for example, when the gate portion 15 is in the closed position, the internal space 10s of the chamber 10 is sealed. For example, when the gate portion 15 is in the open position, the substrate 9 can be loaded into the internal space 10s of the chamber 10 and unloaded from the internal space 10s of the chamber 10 through the load / unload opening 14.

[0034] <1-1-2. Support part 20> The support part 20 is located in the internal space 10s of the chamber 10, and can support the substrate 9 accommodated in the internal space 10s of the chamber 10 from below. The support part 20 has, for example, a plurality of support plates 21 and a plurality of support pins 22. The plurality of support plates 21 are arranged, for example, at intervals in the horizontal direction. A plurality of support pins 22 are erected on the upper surface of each support plate 21. The plurality of support pins 22 are two-dimensionally distributed and arranged in a plan view. The plurality of support plates 21 are a base portion of the support part 20. The substrate 9 is arranged above the plurality of support plates 21, and the upper ends of the plurality of support pins 22 come into contact with a second surface F2, which is the lower surface of the substrate 9, thereby supporting the substrate 9 in a horizontal position.

[0035] <1-1-3. Pressure reducing mechanism 30> 1 and 2, the bottom plate 11 of the chamber 10 is provided with, for example, four exhaust ports 16a, 16b, 16c, and 16d in a portion facing the substrate 9 in the up-down direction. The pressure reducing mechanism 30 has, for example, an exhaust pipe 31, four individual valves Va, Vb, Vc, and Vd, a main valve Ve, and a vacuum pump 32. The exhaust pipe 31 has, for example, four individual pipes 31a, 31b, 31c, and 31d, and one main pipe 31e. For example, one end of the individual pipe 31a is connected to the exhaust port 16a, one end of the individual pipe 31b is connected to the exhaust port 16b, one end of the individual pipe 31c is connected to the exhaust port 16c, and one end of the individual pipe 31d is connected to the exhaust port 16d. For example, the other ends of the four individual pipes 31a, 31b, 31c, and 31d are joined together and connected to one end of a main pipe 31e. For example, the other end of the main pipe 31e is connected to a vacuum pump 32. For example, an individual valve Va is provided on the path of the individual pipe 31a, an individual valve Vb is provided on the path of the individual pipe 31b, an individual valve Vc is provided on the path of the individual pipe 31c, and an individual valve Vd is provided on the path of the individual pipe 31d. For example, a main valve Ve is provided on the path of the main pipe 31e.

[0036] Here, for example, when at least one of the four individual valves Va, Vb, Vc, and Vd and one main valve Ve are opened with the loading / unloading port 14 closed by the gate unit 15, and the vacuum pump 32 is operated, the gas in the chamber 10 is discharged to the outside of the chamber 10 through the exhaust pipe 31. This makes it possible to reduce the pressure in the internal space 10s of the chamber 10, for example. The four individual valves Va, Vb, Vc, and Vd are valves for individually adjusting the exhaust amount (suction flow rate) from the four exhaust ports 16a, 16b, 16c, and 16d, for example. Each of the four individual valves Va, Vb, Vc, and Vd is applied with a valve (also called an on-off valve) that can be switched between an open state and a closed state based on a command from the control unit 80, for example. The main valve Ve is a valve for adjusting the total exhaust amount from the four exhaust ports 16a, 16b, 16c, and 16d, for example. For example, a valve whose opening can be adjusted based on a command from the control unit 80 (also called an opening control valve) is used as the main valve Ve.

[0037] <1-1-4. First lifting section 100> In the first embodiment, the first lifting section 100 lifts and lowers the support section 20 in the chamber 10. In other words, the first lifting section 100 has a mechanism (also called a lifting mechanism) capable of lifting and lowering the support section 20. In FIG. 1, the first lifting section 100 is conceptually shown to avoid complication of the drawing. A driving device such as a linear motor or an air cylinder is applied to the first lifting section 100. As shown in FIG. 3, the first lifting section 100 has, for example, a main body section 100a and a moving section 100b. The main body section 100a is fixed to an apparatus frame (not shown) outside the chamber 10, for example. The moving section 100b can move, for example, in the vertical direction relative to the main body section 100a. For example, a rod-shaped member or the like is applied to the moving section 100b. The moving part 100b is positioned, for example, in a state of being inserted into the through hole 11h of the bottom plate part 11 of the chamber 10. And, for example, the support part 20 is fixed to the upper end part of the moving part 100b. Here, for example, if a bellows or the like is provided between the lower surface of the bottom plate part 11 and the moving part 100b, the gap between the bottom plate part 11 and the moving part 100b can be sealed. For example, when the supporting part 20 has a plurality of supporting plates 21, the moving part 100b has a rod-shaped part (also called a rod-shaped part) fixed to the supporting plate 21 for each supporting plate 21 and inserted into the through hole 11h of the bottom plate part 11, a part (also called a connecting part) connecting the plurality of rod-shaped parts, and a part (also called a sliding part) connected to the connecting part and slidably supported by the main body part 100a. When the first lifting part 100 lifts and lowers the supporting part 20, the substrate 9 supported by the supporting part 20 also lifts and lowers.

[0038] <1-1-5. Cooling section 40> 1, the cooling surface 40a of the cooling unit 40 has a facing region RC facing a region AC (see FIG. 4) on the substrate 9 where the coating film 90 can be formed in the thickness direction (in other words, the up-down direction) of the substrate 9, and an outer region RO outside the facing region RC. The cooling unit 40 is configured so that the temperature of the outer region RO is higher than the temperature of the facing region RC. Specifically, the cooling unit 40 is configured as follows.

[0039] The cooling unit 40 (FIG. 1) has a configuration for cooling the cooling surface 40a using a refrigerant. Specifically, the cooling unit 40 includes a cooling member 41, a refrigerant supply pipe 42, a refrigerant recovery pipe 43, and a refrigerant cooling source 44. Inside the cooling member 41, a path 46 is formed through which the refrigerant flows to cool the cooling surface 40a. Note that in FIG. 3 and FIGS. 9 and 14 described below, the specific configuration of the cooling unit 40 is omitted from illustration in order to avoid complication of the drawings. The cooling member 41 has a plate-like shape. In this case, the cooling member 41 may also be called a cooling plate. The cooling member 41 is attached to the upper surface of the top plate portion 13 with its thickness direction aligned along the vertical direction. The cooling member 41 has, for example, a rectangular shape in a plan view. The lower surface of the cooling member 41 may be in close contact with the upper surface of the top plate portion 13. The cooling member 41 may be formed of a material with high thermal conductivity (for example, metal, etc.).

[0040] The refrigerant flows into the refrigerant cooling source 44 from the downstream end of the refrigerant recovery pipe 43. The refrigerant may be liquid or gas. As a specific example, water can be used as the refrigerant. The refrigerant cooling source 44 cools the refrigerant and supplies the cooled refrigerant to the upstream end of the refrigerant supply pipe 42. The refrigerant cooling source 44 may be, for example, a heat pump. The refrigerant cooled by the refrigerant cooling source 44 flows into the upstream end of the refrigerant supply pipe 42 and flows into the path 46 through the refrigerant supply pipe 42. As the low-temperature refrigerant flows through the path 46, the refrigerant exchanges heat with the cooling member 41 to cool the cooling member 41. As the cooling member 41 exchanges heat with the top plate portion 13, the top plate portion 13 is also cooled. The refrigerant warmed by flowing through the path 46 flows again into the refrigerant cooling source 44 through the refrigerant recovery pipe 43 and is cooled again by the refrigerant cooling source 44.

[0041] When the cooling unit 40 cools the top plate portion 13 of the chamber 10, the cooling surface 40a, which is the lower surface of the top plate portion 13 (i.e., the ceiling surface of the chamber 10), is also cooled. In the example of FIG. 1, the cooling member 41 has a size larger than the substrate 9 in a plan view. That is, the outline of the cooling member 41 surrounds the outline of the substrate 9 in a plan view. When the cooling member 41 has a rectangular shape in a plan view, the long side of the cooling member 41 is longer than the long side of the substrate 9, and the short side of the cooling member 41 is longer than the short side of the substrate 9. This allows the cooling member 41 to sufficiently cool the entire surface of the facing region RC of the cooling surface 40a. The rectangular shape may be a square shape. In this case, one side of the cooling member 41 may be longer than the short side of the substrate 9. According to this, regardless of the orientation of the substrate 9 arranged on the support portion 20, the cooling member 41 is larger than the substrate 9 in a plan view. Therefore, regardless of the orientation of the substrate 9, the cooling member 41 can appropriately cool the entire surface of the facing region RC of the cooling surface 40a.

[0042] FIG. 6 is a diagram that shows an example of the upper surface of the reduced pressure drying apparatus 1 according to the first embodiment, and also shows a part of the internal configuration. With reference to FIG. 1 and FIG. 6, in the first embodiment, the cooling section 40 has a plurality of paths 46a to 46d as a path 46, inlets 47a to 47d through which the refrigerant is introduced into each of the paths 46a to 46d, and outlets 48a to 48d through which the refrigerant is discharged from each of the paths 46a to 46d. The inlets 47a to 47d (FIG. 6) and the outlets 48a to 48d (FIG. 6) are formed on the upper surface of the cooling member 41 (see FIG. 1). The inlets 47a to 47d are connected to the downstream ends of the refrigerant supply pipes 42a to 42d, respectively, and the outlets 48a to 48d are connected to the upstream ends of the refrigerant recovery pipes 43a to 43d, respectively. The upstream end of the refrigerant supply pipe 42 and the downstream end of the refrigerant recovery pipe 43 are connected to the refrigerant cooling source 44.

[0043] In plan view, each of the paths 46a to 46d spans the opposing region RC and the outer region RO. Each of the inlets 47a to 47d is located in the opposing region RC. Each of the outlets 48a to 48d is located in the outer region RO. Each of the paths 46a to 46d may extend in a spiral shape in plan view.

[0044] By configuring the cooling unit as described above, the temperature of the coolant rises as the cooled coolant flows from the facing region RC to the outer region RO. Thus, the facing region RC is cooled more strongly than the outer region RO. Thus, the temperature of the outer region RO is higher than the temperature of the facing region RC. For example, the temperature at the edge ED of the outer region RO may be higher than the temperature at all points in the facing region RC. In other words, the temperature at the edge ED of the outer region RO may be higher than the maximum temperature in the facing region RC.

[0045] <1-1-6. Bottom rectifier plate 50> The bottom rectifying plate 50 is a plate for regulating the flow of gas in the internal space 10s when the pressure in the chamber 10 is reduced by the decompression mechanism 30. For example, the bottom rectifying plate 50 is disposed so as to be located between the substrate 9 supported by the support portion 20 and the bottom plate portion 11 of the chamber 10. The bottom rectifying plate 50 is fixed to the bottom plate portion 11 of the chamber 10 via a plurality of pillars not shown. As shown in FIG. 2, for example, the bottom rectifying plate 50 has a square shape in a plan view. And, for example, the length of each side of the bottom rectifying plate 50 in a plan view is longer than the short side of the rectangular substrate 9. For this reason, for example, regardless of the orientation of the substrate 9 arranged on the support portion 20, the bottom rectifying plate 50 is larger than the substrate 9 in a plan view. Also, the bottom rectifying plate 50 has, for example, a through hole 50h through which the moving portion 100b of the first lifting portion 100 is inserted. At the through hole 50h, the bottom flow plate 50 and the moving part 100b are positioned with a very small gap therebetween.

[0046] <1-1-7. Side rectifier plate 51> The side rectifying plate 51, together with the bottom rectifying plate 50, is a plate for regulating the flow of gas in the internal space 10s when the pressure inside the chamber 10 is reduced by the decompression mechanism 30. For example, the side rectifying plate 51 is arranged so as to be located between the substrate 9 supported by the support part 20 located at the lowered position H2 and the side wall part 12 of the chamber 10. Here, for example, four side rectifying plates 51 are arranged so as to surround the periphery of the substrate 9 supported by the support part 20. For example, the four side rectifying plates 51 as a whole form a rectangular cylindrical rectifying plate surrounding the substrate 9. Also, for example, the bottom rectifying plate 50 and the four side rectifying plates 51 as a whole form a cylindrical box-shaped rectifying plate with a bottom. In the example of FIG. 1, the upper end of the side rectifying plate 51 is located below the second surface F2 of the substrate 9 supported by the support part 20 located at the raised position H1. Therefore, in the first state in which the support portion 20 is located at the raised position H1, the substrate 9 is not surrounded by the four side flow straightening plates 51.

[0047] Here, for example, when the pressure in the chamber 10 is reduced in the second state in which the support portion 20 is located at the lowered position H2, the gas directly above the substrate 9 mainly flows toward the upper end of the side rectifying plate 51 (see also FIG. 14 described later). The gas passes through the space between the side rectifying plate 51 and the side wall portion 12, the space between the bottom rectifying plate 50 and the bottom plate portion 11, and the exhaust ports 16a, 16b, 16c, and 16d in the order described, and is discharged to the outside of the chamber 10. In this way, the gas flows through a space away from the substrate 9, so that an airflow is unlikely to be formed near the substrate 9. And, the generation of a concentrated airflow is unlikely to occur at the peripheral portion of the substrate 9. This can suppress, for example, the occurrence of uneven drying of the coating film 90 formed on the upper surface of the substrate 9.

[0048] 2, a configuration is adopted in which the four exhaust ports 16a, 16b, 16c, and 16d are all located on diagonals 52 of a square bottom surface straightening plate 50 in a plan view. In this case, for example, the exhaust ports 16a, 16b, 16c, and 16d can form airflows that are symmetrical with respect to the center (the intersection of the two diagonals 52) of the bottom surface straightening plate 50. This can form a more uniform airflow in the internal space 10s of the chamber 10, for example.

[0049] <1-1-8. Air supply section 60> The air supply unit 60 is a part that performs an operation of supplying gas into the chamber 10 (also referred to as air supply). As shown in FIG. 1, for example, an air supply port 16f is provided on the bottom plate portion 11 of the chamber 10. The air supply port 16f is located, for example, below the bottom surface straightening plate 50. The air supply unit 60 has an air supply pipe 61 connected to the air supply port 16f, an air supply valve Vf, and an air supply source 62. For example, one end of the air supply pipe 61 is connected to the air supply port 16f. For example, the other end of the air supply pipe 61 is connected to the air supply source 62. For example, the air supply valve Vf is provided on the path of the air supply pipe 61.

[0050] Here, for example, when the air supply valve Vf is opened, gas is supplied from the air supply source 62 to the internal space 10s of the chamber 10 via the air supply pipe 61 and the air supply port 16f. This makes it possible to increase the pressure inside the chamber 10. The gas supplied from the air supply source 62 may be, for example, an inert gas such as nitrogen gas, or may be clean dry air. The clean dry air can be prepared, for example, by purifying air in a general environment to remove particles and moisture.

[0051] <1-1-9. Pressure gauge 70> The pressure gauge 70 is a sensor that measures the pressure in the internal space 10s of the chamber 10. As shown in FIG. 1, the pressure gauge 70 is attached to a part of the chamber 10. The pressure gauge 70 can measure the pressure in the internal space 10s of the chamber 10 and output the measurement result to the control unit 80.

[0052] <1-1-10. Control unit 80> The control unit 80 is a unit (electronic circuit) for controlling the operation of each part of the reduced pressure drying apparatus 1. The control unit 80 can control the configuration of the reduced pressure mechanism 30, the cooling unit 40, the air supply unit 60, the first lifting unit 100, and the like. The control unit 80 is configured by a computer having, for example, a processor 801 such as a CPU (Central Processing Unit), a memory 802 such as a RAM (Random Access Memory), and a storage unit 803 such as a hard disk drive. The storage unit 803 stores, for example, a computer program (also called a program) 803p for executing a process (also called a reduced pressure drying process) for drying the coating film 90 on the substrate 9 by reducing pressure in the reduced pressure drying apparatus 1, and various data. The storage unit 803 stores, for example, the program 803p, and serves as a non-transitory storage medium readable by a computer. The control unit 80 controls the operation of each unit of the reduced-pressure drying apparatus 1, for example, by reading out a program 803p and data from the storage unit 803 to the memory 802 and having the processor 801 perform arithmetic processing in accordance with the program 803p and the data. Therefore, for example, the program 803p can be executed by the processor 801 included in the control unit 80 in the reduced-pressure drying apparatus 1 to perform the reduced-pressure drying process.

[0053] Further, the control unit 80 may be connected with, for example, an input unit 804, an output unit 805, a communication unit 806, and a drive 807. The input unit 804 is, for example, a unit that inputs various signals to the control unit 80 in response to a user's operation or the like. The input unit 804 may include, for example, an operation unit that inputs a signal according to a user's operation, a microphone that inputs a signal according to the user's voice, and various sensors that input a signal according to the user's movement. The output unit 805 is, for example, a unit that outputs various information in a manner that can be recognized by the user. The output unit 805 may include, for example, a display unit, a projector, and a speaker. The display unit may be a touch panel integrated with the input unit 804. The communication unit 806 is, for example, a unit that transmits and receives various information to and from an external device such as a server by wired or wireless communication means or the like. For example, a program 803p received from an external device by the communication unit 806 may be stored in the storage unit 803. The drive 807 is a part to which a portable storage medium 807m, such as a magnetic disk or an optical disk, can be attached and detached. When the storage medium 807m is attached, the drive 807 exchanges data between the storage medium 807m and the control unit 80. For example, the storage medium 807m storing the program 803p may be loaded into the drive 807, so that the program 803p may be read from the storage medium 807m and stored in the storage unit 803. Here, the storage medium 807m serves as a non-transitory storage medium that stores the program 803p and is readable by a computer.

[0054] Fig. 7 is a block diagram conceptually showing functions realized in the control unit 80. As shown in Fig. 7, the control unit 80 is electrically connected to, for example, the opening / closing drive unit 16, the first lifting unit 100, the four individual valves Va, Vb, Vc, Vd, the main valve Ve, the vacuum pump 32, the air supply valve Vf, the cooling unit 40, and the pressure gauge 70. The control unit 80 can control the operation of each of the above-mentioned units, for example, by referring to the measurement value output from the pressure gauge 70.

[0055] As conceptually shown in FIG. 7, the control unit 80 has, for example, an opening / closing control unit 81, a lifting / lowering control unit 82, a switching control unit 83, an exhaust control unit 84, a pump control unit 85, an air supply control unit 86, and a cooling control unit 87 as functional configurations to be realized. For example, the opening / closing control unit 81 controls the operation of the opening / closing drive unit 16. For example, the lifting / lowering control unit 82 controls the operation of the first lifting / lowering unit 100. For example, the switching control unit 83 individually controls the open / closed states of the four individual valves Va, Vb, Vc, and Vd. For example, the exhaust control unit 84 controls the open / closed state and the opening degree of the main valve Ve. For example, the pump control unit 85 controls the operation of the vacuum pump 32. For example, the air supply control unit 86 controls the open / closed state of the air supply valve Vf. For example, the cooling control unit 87 controls the operation of the cooling unit 40. The functions of each unit in the control unit 80 are realized, for example, by the processor 801 performing arithmetic processing according to the above-mentioned program 803p and the like.

[0056] <1-2. Reduced pressure drying process> Next, a reduced-pressure drying process for the substrate 9 using the reduced-pressure drying apparatus 1 will be described. Fig. 8 is a flow chart showing an example of the flow of the reduced-pressure drying process according to the first embodiment. This flow of the reduced-pressure drying process is realized, for example, by executing a program 803p in a processor 801 included in the control unit 80. Here, for example, the processes from step S1 to step S8 in Fig. 8 are performed in the order shown.

[0057] When performing the reduced pressure drying process using the reduced pressure drying apparatus 1, for example, first, the substrate 9 is carried into the chamber 10 (step S1). At this time, an undried coating film 90 is formed on the upper surface of the substrate 9. In step S1, for example, the gate unit 15 opens the loading / unloading port 14 under the control of the control unit 80, and a transport robot (not shown) loads the substrate 9 on a fork-shaped hand and loads the substrate 9 into the internal space 10s of the chamber 10 through the loading / unloading port 14 of the chamber 10. At this point, the support unit 20 is located at, for example, the lowered position H2. Note that the side rectifying plate 51 may be configured to be movable so that it does not interfere with the transport robot. For example, the transport robot loads the substrate 9 on the support unit 20 while inserting the fork-shaped hand between the multiple support plates 21 of the support unit 20, and then retracts the fork to the outside of the chamber 10. Then, the gate unit 15 closes the loading / unloading port 14 under the control of the control unit 80. As described above, in step S1, a step of placing the substrate 9 on the plurality of support pins 22 arranged in the chamber 10 (also referred to as a placing step) is performed.

[0058] Next, the reduced pressure drying apparatus 1 performs a cooling process (step S2). The cooling process is a process of cooling the cooling surface 40a. Specifically, the control unit 80 operates the cooling unit 40, so that the cooling unit 40 cools the cooling surface 40a and reduces the temperature of the cooling surface 40a. The cooling unit 40 reduces the temperature of the cooling surface 40a to a target temperature. For example, the center of the facing region RC of the cooling surface 40a is set to about 15 degrees Celsius, and the edge ED of the outer region RO of the cooling surface 40a is set to about 20 degrees Celsius. The cooling unit 40 may continue the cooling operation on the cooling surface 40a until the reduced pressure drying process on the substrate 9 is completed. The cooling operation by the cooling unit 40 may be started before step S1.

[0059] Next, the reduced pressure drying apparatus 1 performs a first gap adjustment process (step S3). The first gap adjustment process is a process for adjusting the gap between the substrate 9 and the cooling surface 40a to a first gap. Specifically, the control unit 80 controls the first lifting unit 100 to raise the support unit 20 to the raised position H1. In the first state in which the support unit 20 is located at the raised position H1, the substrate 9 is located above the upper end of the side straightening plate 51 (see also FIG. 1).

[0060] Next, the reduced-pressure drying apparatus 1 performs a first depressurization process (corresponding to step S4: first step). The first depressurization process is a process for reducing the pressure in the chamber 10 to a first pressure (hereinafter referred to as a first target pressure). The first target pressure is set to be lower than the standard atmospheric pressure, for example, 10 kPa or higher. Specifically, the control unit 80 reduces the pressure in the chamber 10 by causing the depressurization mechanism 30 to suck the gas in the chamber 10 at a small first suction flow rate. For example, the control unit 80 may reduce the opening of the main valve Ve to be smaller than the opening during the second depressurization process described below. This allows the pressure in the chamber 10 to decrease at a slower rate during the first depressurization process.

[0061] In step S3, for example, the control unit 80 may individually and appropriately control the open / close states of the multiple individual valves Va, Vb, Vc, and Vd, thereby controlling the airflow in the chamber 10 so as to suppress the occurrence of uneven drying of the substrate 9.

[0062] 9 and 10 are diagrams that show an example of the state inside the chamber 10 during the first decompression process. Fig. 9 shows the entire chamber 10, and Fig. 10 shows an enlarged view of the cooling surface 40a and the vicinity of the substrate 9 inside the chamber 10.

[0063] 9, in the first decompression process, in the first state where the support part 20 is located at the raised position H1, the distance between the substrate 9 and the cooling surface 40a is very narrow. Therefore, the rate at which the pressure in the upper space 10s1 decreases becomes slower, and the occurrence of bumping in the coating film 90 on the upper surface of the substrate 9 can be suppressed.

[0064] On the other hand, in the first state, the substrate 9 supported by the support portion 20 is located above the upper end of the side rectifying plate 51. Therefore, the rectifying function of the side rectifying plate 51 hardly works on the upper space 10s1 between the substrate 9 and the cooling surface 40a. Therefore, the side rectifying plate 51 does not have much effect on suppressing the occurrence of uneven drying. In the first state, the lower space 10s2 below the substrate 9 is wide, so the gas in the lower space 10s2 is quickly exhausted. Specifically, the gas in the lower space 10s2 passes between the side rectifying plate 51 and the side wall portion 12 of the chamber 10 and is exhausted from the chamber 10. In FIG. 9, this air flow is shown diagrammatically by dashed arrows.

[0065] The pressure in the chamber 10 is reduced by the first decompression process, so that the solvent in the coating film 90 on the upper surface of the substrate 9 evaporates. In FIG. 10, the flow of solvent vapor from the coating film 90 is shown by dashed arrows. In the first decompression process, the cooling unit 40 cools the cooling surface 40a, so that the solvent vapor from the coating film 90 is cooled and condensed on the cooling surface 40a. That is, as shown in FIG. 10, the liquid solvent 91 adheres to the cooling surface 40a. In other words, the target temperature of the cooling surface 40a is set to a temperature at which the solvent vapor condenses when the pressure in the chamber 10 is the first target pressure. As a more specific example, the target temperature of the cooling surface 40a is set to a temperature at which the pressure becomes the first target pressure or lower on the vapor pressure curve of the solvent. As a result, the solvent 91 can be adhered almost uniformly to the area of ​​the cooling surface 40a facing the coating film 90. In this manner, the solvent vapor in upper space 10s1 condenses on cooling surface 40a, whereby the concentration of the solvent vapor in upper space 10s1 decreases, and the concentration distribution of the solvent vapor in the top view becomes more uniform.

[0066] For comparison, a comparative structure not provided with a cooling unit 40 will be described. Fig. 11 is an enlarged view of the top plate 13 and substrate 9 of the chamber 10 according to the comparative structure. In the example of Fig. 10, the lower surface 13a of the top plate 13 of the chamber 10 is not cooled by the cooling unit 40. The temperature of the lower surface 13a of the top plate 13 is, for example, approximately room temperature.

[0067] In the first decompression process, the gap between the substrate 9 and the lower surface 13a is narrow, so that the solvent vapor from the coating film 90 immediately collides with the lower surface 13a of the top plate portion 13. Therefore, the solvent vapor is likely to remain in the central region of the upper space 10s1 that faces the central portion of the coating film 90. On the other hand, in the peripheral region of the upper space 10s1 that faces the peripheral portion of the coating film 90, the solvent vapor can flow out horizontally due to concentration diffusion. Therefore, the peripheral portion of the coating film 90 is more likely to evaporate than the central portion. In other words, the coating film 90 may be dried unevenly.

[0068] FIG. 12 is a diagram showing an example of the concentration distribution of the solvent vapor in the upper space 10s1 in the comparative structure. FIG. 12(a) shows the concentration distribution of the solvent vapor in a top view, and FIG. 12(b) shows the concentration distribution of the solvent vapor in a side view. In FIG. 12(a), the concentration distribution of the solvent vapor is shown by contour lines T1 to T10. The smaller the number of the symbol of the contour lines T1 to T10, the higher the concentration. That is, the contour line T1 shows the highest concentration between the contour lines T1 to T10. In FIG. 12(b), the concentration distribution of the solvent vapor is shown by contour lines T11 to T21. The smaller the number of the symbol of the contour lines T11 to T21, the higher the concentration. That is, the contour line T11 shows the highest concentration between the contour lines T11 to T21.

[0069] As can be seen from Fig. 12(a), in the comparative structure, solvent vapor flows from the periphery to the outside of the coating film 90. Also, as shown in Fig. 12(b), in the peripheral region 10r of the upper space 10s1 that faces the peripheral portion of the coating film 90, the concentration of solvent vapor decreases toward the outside of the coating film 90. For this reason, it can be seen that the peripheral portion of the coating film 90 evaporates more easily than the central portion.

[0070] FIG. 13 is a diagram showing an example of the concentration distribution of the solvent vapor in the upper space 10s1 when the cooling unit 40 is cooling. FIG. 13(a) shows the concentration distribution of the solvent vapor in a top view, and FIG. 13(b) shows the concentration distribution of the solvent vapor in a side view. As can be seen from FIG. 13(a), the solvent vapor does not flow outward from the periphery of the coating film 90 very much. This is because the solvent vapor from the coating film 90 is cooled and condensed on the cooling surface 40a. That is, both the solvent vapor from the central part of the coating film 90 and the solvent vapor from the peripheral part flow upward with an ascending air current according to the temperature difference with the cooling surface 40a, and condense on the cooling surface 40a (see also FIG. 10). In this way, the solvent vapor from the peripheral part is also condensed on the cooling surface 40a, so that the solvent vapor does not flow outward very much. In addition, the solvent vapor from the coating film 90 does not remain in the upper space 10s1 very much.

[0071] As shown in FIG. 13(b), even in peripheral region 10r, the concentration of solvent vapor decreases with increasing distance from coating film 90 in the vertical direction, but is approximately uniform in the horizontal direction.

[0072] Therefore, the difference between the amount of evaporation in the central portion and the amount of evaporation in the peripheral portion of the coating film 90 can be reduced, and the occurrence of drying unevenness can be suppressed. In addition, the condensation of the solvent vapor on the cooling surface 40a reduces the concentration of the solvent vapor in the upper space 10s1, so that the evaporation of the coating film 90 can be promoted. As a result, the throughput in the reduced pressure drying process can be improved.

[0073] Next, for example, when the pressure inside the chamber 10 reaches the first target pressure, the reduced pressure drying apparatus 1 performs a second gap adjustment process (step S5). The second gap adjustment process is a process for adjusting the gap between the substrate 9 and the cooling surface 40a to a second gap. Specifically, the control unit 80 controls the first lifting unit 100 to lower the support unit 20 to the lowered position H2. In the second state in which the support unit 20 is located at the lowered position H2, the substrate 9 is located below the upper end of the side straightening plate 51.

[0074] Next, the reduced-pressure drying apparatus 1 performs a second depressurization process (corresponding to step S6: second step). The second depressurization process is a process for lowering the pressure in the chamber 10 to a second pressure (hereinafter referred to as the second target pressure) lower than the first target pressure. Specifically, the control unit 80 reduces the pressure in the chamber 10 by making the depressurization mechanism 30 suck the gas in the chamber 10 at a second suction flow rate higher than the first suction flow rate. For example, the control unit 80 may increase the opening of the main valve Ve to a value larger than that in the first depressurization process. The pressure in the chamber 10 is reduced to the second target pressure at a lowering rate higher than that in the first depressurization process. In the second depressurization process, the reduced-pressure drying apparatus 1 may maintain the pressure in the chamber 10 at the second target pressure for a predetermined period of time. The second target pressure is, for example, less than 10 kPa and equal to or greater than 0.1 Pa.

[0075] Also in step S6, for example, the control unit 80 may individually and appropriately control the open / close states of the individual valves Va, Vb, Vc, and Vd. This makes it possible to control the airflow in the chamber 10 so as to suppress uneven drying of the substrate 9.

[0076] FIG. 14 is a diagram showing an example of the state inside the chamber 10 during the second decompression process. As shown in FIG. 14, in the second state in which the support 20 is located at the lowered position H2, the distance between the substrate 9 and the cooling surface 40a is wide. In other words, the height of the upper space 10s1 is large. Therefore, unlike the first decompression process, the solvent vapor from the coating film 90 is likely to flow upward, and the solvent vapor is unlikely to stagnate. Since the upper space 10s1 is large, the pressure inside the upper space 10s1 can be more appropriately and quickly reduced to the second target pressure.

[0077] In the second state, the substrate 9 supported by the support portion 20 is surrounded by the four side rectifying plates 51. Therefore, the rectifying function of the side rectifying plates 51 acts on the upper space 10s1 between the substrate 9 and the cooling surface 40a. In other words, the side rectifying plates 51 can suppress the concentration of the airflow on the peripheral portion of the substrate 9. Therefore, the occurrence of uneven drying of the coating film 90 due to the airflow can be further suppressed.

[0078] When the pressure in the chamber 10 reaches the second target pressure, the solvent in the coating film 90 boils, and the drying of the coating film 90 proceeds at a higher speed. The decompression mechanism 30 may suck the gas in the chamber 10 so that the pressure in the chamber 10 is substantially constant at the second target pressure. That is, the decompression mechanism 30 may maintain the pressure in the chamber 10 at the second target pressure for a predetermined period of time. In this embodiment, the solvent 91 attached to the cooling surface 40a also evaporates in the second decompression process. In other words, the target temperature of the cooling surface 40a is set to a temperature at which the solvent evaporates when the pressure in the chamber 10 reaches the second target pressure. As a more specific example, the target temperature of the cooling surface 40a is set to a temperature at which the pressure reaches the second target pressure on the vapor pressure curve of the solvent or higher.

[0079] The solvent vapor from the coating film 90 and the cooling surface 40a flows from the upper end side of the side straightening plate 51 into the space between the side straightening plate 51 and the side wall portion 12 of the chamber 10, and is exhausted to the outside through the exhaust ports 16a, 16b, 16c, and 16d. In Fig. 14, the flow of the solvent vapor is shown diagrammatically by dashed arrows.

[0080] When the boiling of the coating film 90 is completed, that is, when a predetermined period of time has elapsed, the decompression mechanism 30 may further reduce the pressure in the chamber 10. In other words, the decompression mechanism 30 may reduce the pressure in the chamber 10 to a third target pressure that is lower than the second target pressure. This makes it possible to more reliably dry the coating film 90 and the cooling surface 40a.

[0081] As described above, in the second decompression process, the first lifting unit 100 lowers the support unit 20 to the lowered position H2, and the decompression mechanism 30 reduces the pressure in the chamber 10 to the second target pressure or less. This allows the reduced-pressure drying apparatus 1 to dry not only the coating film 90 on the upper surface of the substrate 9, but also the cooling surface 40a in the second decompression process.

[0082] When both the coating film 90 and the cooling surface 40a are sufficiently dried, the control unit 80 opens the air supply valve Vf. This causes gas to be supplied from the air supply source 62 through the air supply pipe 61 and the air supply port 16f to the internal space 10s of the chamber 10 (step S7). This causes the pressure inside the chamber 10 to rise again to atmospheric pressure.

[0083] Then, for example, finally, the substrate 9 is carried out from the chamber 10 (step S8). In step S8, for example, first, the gate unit 15 opens the load / unload opening 14 under the control of the control unit 80, and a transfer robot (not shown) carries the dried substrate 9 placed on the support unit 20 out of the chamber 10 via the load / unload opening 14 of the chamber 10. This may complete the reduced pressure drying process for one substrate 9.

[0084] FIG. 15 is a comparative example of FIG. 9, and shows a case where a reduced pressure drying apparatus 1Z is used instead of the reduced pressure drying apparatus 1 (FIG. 1). The reduced pressure drying apparatus 1Z has a cooling section 40Z instead of the cooling section 40 of the above-mentioned embodiment. Unlike the cooling section 40, the cooling section 40Z is configured to cool the cooling surface 40a almost uniformly. As a result, the liquid solvent 91 is likely to adhere to the entire cooling surface 40a, and therefore also to the edge ED of the cooling surface 40a. In particular, when the processing of many substrates 9 is repeated, the liquid solvent 91 is likely to spread to or beyond the edge ED.

[0085] FIG. 16 is a comparative example of FIG. 14, and shows a case where the above-mentioned reduced pressure drying apparatus 1Z is used. At the edge ED of the cooling surface 40a, the air flow during decompression is slow, so the liquid solvent 91 (FIG. 15) does not dry easily, and the solvent 91 is likely to remain as condensation 91R. This may be particularly noticeable at the corners of the rectangular edge ED. If an intricate structure such as an O-ring is provided near the edge ED, the drying process becomes more difficult. In addition, as a result of the condensation 91R dripping from the edge ED along the side wall 12, the liquid solvent may enter the intricate structure, and in this case, the drying process also becomes difficult. In order to dry the condensation 91R, the drying time needs to be very long, which significantly reduces productivity.

[0086] In contrast, according to the first embodiment, referring to Fig. 9 and Fig. 14, the temperature of the outer region RO is made higher than the temperature of the facing region RC on the cooling surface 40a of the cooling unit 40, so that the accumulation of the liquid solvent 91 in the outer region RO is suppressed while allowing the desired aggregation of the solvent 91 in the facing region RC. According to the study by the present inventor, the solvent is more likely to evaporate quickly in the facing region RC than in the outer region RO, so that if the accumulation of the liquid solvent 91 in the outer region RO is suppressed, it is not necessary to spend a long time on a process to prevent excessive accumulation of the liquid solvent 91. Therefore, it is possible to avoid adverse effects caused by excessive accumulation of the liquid solvent 91 on the cooling surface 40a of the cooling unit 40 while avoiding a decrease in productivity.

[0087] In particular, in the first embodiment, four paths 46a to 46c (FIG. 6) are provided as the coolant path 46. This makes it easy to arrange the paths 46 so that the substrate 9, which has a rectangular shape, i.e., a shape having four corners, is uniformly cooled. Each of the four paths 46a to 46c may have a portion that extends linearly along each side of the rectangular shape of the substrate 9. In other words, each of the four paths 46a to 46c may have a portion that extends linearly along each side of the rectangular shape of the cooling surface 40a. In other words, each of the four paths 46a to 46c may have a portion that extends linearly along each side of the rectangular shape of the cooling member 41.

[0088] In addition, the control unit 80 may control the first lifting unit 100 and the pressure reduction mechanism 30 to set the pressure in the chamber 10 to a first pressure in a first state in which the distance between the substrate 9 and the cooling surface 40a is a first distance, and then to set the pressure in the chamber 10 to a second pressure in a second state in which the distance between the substrate 9 and the cooling surface 40a is a second distance.

[0089] Specifically, first, in the first decompression process, the cooling unit 40 cools the cooling surface 40a, and the first lifting unit 100 raises the support unit 20 to the raised position H1, and the decompression mechanism 30 may reduce the pressure in the chamber 10 to the first target pressure. In the first decompression process, since the support unit 20 is located at the raised position H1, the distance between the substrate 9 and the cooling surface 40a is narrow. Therefore, a sudden reduction in pressure in the upper space 10s1 between the substrate 9 and the cooling surface 40a can be suppressed, and bumping of the coating film 90 can be suppressed.

[0090] In addition, in the first decompression process, the cooling unit 40 may cool the cooling surface 40a. More specifically, the cooling unit 40 may lower the temperature of the cooling surface 40a to a target temperature at which the solvent vapor condenses under the first target pressure. Therefore, the solvent vapor from the coating film 90 on the substrate 9 condenses on the cooling surface 40a. This makes it possible to suppress the retention of the solvent vapor in the upper space 10s1 (particularly the central region), and to suppress the occurrence of uneven drying of the coating film 90.

[0091] On the other hand, in the second decompression process after the first decompression process, the decompression mechanism 30 may reduce the pressure in the chamber 10 to the second target pressure or less while the first lifting unit 100 has lowered the support unit 20 to the lowered position H2. Since the support unit 20 is located at the lowered position H2, the distance between the substrate 9 and the cooling surface 40a is wide. This allows the pressure in the chamber 10 to be reduced more appropriately and quickly. Therefore, the coating film 90 can be dried more appropriately and quickly. In addition, since the distance between the substrate 9 and the cooling surface 40a is wide in the second decompression process, the retention of solvent vapor is unlikely to occur, and uneven drying is unlikely to occur.

[0092] In the second decompression process, the temperature of the cooling surface 40a may be a temperature at which the solvent evaporates under the second target pressure. Therefore, in the second decompression process, not only the coating film 90 on the substrate 9 but also the cooling surface 40a can be dried. Therefore, there is no need to separately dry the cooling surface 40a before processing the next substrate 9, and the next substrate 9 can be processed quickly. This can improve the throughput of processing a plurality of substrates 9.

[0093] In the first embodiment, the ceiling surface of the chamber 10 may correspond to the cooling surface 40a. Therefore, if the cooling unit 40 is externally attached to the upper surface of the chamber 10, the existing chamber 10 can be used as is.

[0094] In the first embodiment, the cooling member 41 may cool the top plate portion 13, thereby cooling the cooling surface 40a, which is the lower surface of the top plate portion 13. Although the temperature distribution in the cooling member 41 when viewed from above may vary slightly depending on the extension shape of the path 46, the variation in the temperature distribution is mitigated toward the cooling surface 40a due to heat transfer in the top plate portion 13. In other words, the temperature distribution on the cooling surface 40a of the top plate portion 13 can be made more uniform. Therefore, the solvent vapor from the coating film 90 on the first surface F1 of the substrate 9 can be condensed more uniformly on the cooling surface 40a. Therefore, the uniformity of the concentration distribution of the solvent vapor in the upper space 10s1 can be increased. This can further suppress the occurrence of drying unevenness.

[0095] In the first embodiment, the first lifting unit 100 that lifts and lowers the support unit 20 may be used to adjust the gap between the substrate 9 and the cooling surface 40a. Therefore, the existing first lifting unit 100 can be used as is.

[0096] <2. Second embodiment> 17 and 18 are diagrams each showing an example of a vertical cross section and a top view of a reduced pressure drying apparatus 1H according to the second embodiment. The cooling section 40 of the reduced pressure drying apparatus 1H has a heater 49H located in the outer region RO in a plan view (FIG. 18). This makes it possible to more reliably make the temperature of the outer region RO higher than the temperature of the facing region RC. In the example shown in FIG. 17, the heater 49H is disposed on the top plate 13 of the chamber 10 away from the cooling member 41. Other configurations of the reduced pressure drying apparatus 1H are similar to those of the reduced pressure drying apparatus 1 described above, and therefore description thereof will be omitted.

[0097] <3. Third embodiment> 19 and 20 are schematic diagrams showing an example of a vertical cross section and a top view of a reduced pressure drying apparatus 1N according to the third embodiment. The cooling section 40 of the reduced pressure drying apparatus 1N has a heat insulating member 49N located in the outer region RO in a plan view (FIG. 20). The heat insulating member 49N is located so as to separate the path 46 and the cooling surface 40a. The heat insulating member 49N has a lower thermal conductivity than the member forming the cooling surface 40a (top plate portion 13 in this embodiment). This makes it possible to more reliably make the temperature of the outer region RO higher than the temperature of the facing region RC. In the example shown in FIG. 19, the heat insulating member 49N is disposed in a groove (see FIG. 19) provided in the top plate portion 13 of the chamber 10, and is disposed so as to straddle the inside and outside of the edge of the cooling member 41 in a plan view.

[0098] Other configurations of the reduced pressure drying apparatus 1N are the same as those of the reduced pressure drying apparatus 1 (first embodiment) described above, and therefore the description thereof will be omitted. Note that the heater 49H of the second embodiment may be applied to this embodiment.

[0099] <4. Fourth embodiment> FIG. 21 is a diagram that shows an example of the upper surface of the reduced-pressure drying apparatus 1T according to the fourth embodiment. The reduced-pressure drying apparatus 1T has a configuration in which the paths 46b, 46c, the inlets 47b, 47c, and the outlets 48b, 48c are omitted from the reduced-pressure drying apparatus 1 (FIG. 6). In the example shown in FIG. 21, in a plan view, the inlets 47b and 47c are arranged on a common diagonal line of the rectangular shape of the cooling surface 40a. In addition, in a plan view, the outlets 48b and 48c are arranged on a common diagonal line of the rectangular shape of the cooling surface 40a. Furthermore, in a plan view, the inlets 47b, 47c, the outlets 48b, and the outlets 48c are arranged on a common diagonal line of the rectangular shape of the cooling surface 40a.

[0100] <5. Fifth embodiment> FIG. 22 is a diagram showing an example of a vertical cross section of the reduced pressure drying apparatus 1A according to the fifth embodiment. Although not shown in FIG. 22, the reduced pressure drying apparatus 1A also includes a refrigerant supply pipe 42, a refrigerant recovery pipe 43, a refrigerant cooling source 44, and a path 46, similar to the reduced pressure drying apparatus 1 (FIG. 1). The reduced pressure drying apparatus 1A has a similar configuration to the reduced pressure drying apparatus 1, except for the second lifting section 45. The second lifting section 45 lifts and lowers the cooling member 41 of the cooling section 40 between the cooling position H3 and the separated position H4. The cooling position H3 is a position where the lower surface of the cooling member 41 contacts the upper surface of the top plate section 13 of the chamber 10, and the separated position H4 is a position where the cooling member 41 is separated from the top plate section 13. In the example of FIG. 22, the cooling member 41 located at the separated position H4 is shown in a virtual line. A driving device such as a linear motor or an air cylinder is applied to the second lifting section 45.

[0101] Fig. 23 is a flow chart showing an example of the flow of reduced pressure drying processing according to the fifth embodiment. Here, for example, the processing from step S11 to step S19 in Fig. 23 is performed in this order. The cooling member 41 is initially located at the cooling position H3.

[0102] The reduced pressure drying apparatus 1A first performs steps S11 to S15 in this order. Steps S11 to S15 are similar to steps S1 to S5, respectively. However, the cooling operation of the cooling surface 40a by the cooling unit 40 may substantially end at step S15.

[0103] Following step S15, the reduced pressure drying apparatus 1A performs a cooling unit separation process (step S16). The cooling unit separation process is a process for moving the cooling unit 40 to the separation position H4. Specifically, the control unit 80 controls the second lifting unit 45 to raise the cooling member 41 from the cooling position H3 to the separation position H4. By raising the cooling member 41 to the separation position H4, the cooling operation on the cooling surface 40a can be substantially interrupted.

[0104] Next, the reduced pressure drying apparatus 1A performs steps S17 to S19, which are the same as steps S6 to S8, respectively.

[0105] As described above, according to the fifth embodiment, in the first decompression process (step S14), the cooling member 41 descends to the cooling position H3 and cools the cooling surface 40a, which is the lower surface of the top plate portion 13. Therefore, the reduced pressure drying apparatus 1A can more reliably condense the solvent vapor on the cooling surface 40a in the first decompression process. Moreover, according to the fifth embodiment, in the second decompression process (step S17), the cooling member 41 ascends to the separated position H4. Therefore, in the second decompression process, the cooling operation on the cooling surface 40a can be substantially interrupted. As the cooling member 41 moves away from the cooling surface 40a, the temperature of the cooling surface 40a increases over time, and therefore the evaporation of the solvent 91 attached to the cooling surface 40a can be promoted. Therefore, the reduced pressure drying apparatus 1A can more reliably dry the cooling surface 40a in the second decompression process.

[0106] <6. Sixth Embodiment> 24 is a diagram illustrating an example of a vertical cross section of a reduced pressure drying apparatus 1B according to a sixth embodiment. The reduced pressure drying apparatus 1B has a similar configuration to the reduced pressure drying apparatus 1 (FIG. 1) except for the internal configuration of the cooling section 40.

[0107] As shown in FIG. 24, a part of the cooling section 40 of the reduced pressure drying apparatus 1B is embedded in the top plate section 13 of the chamber 10. Here, the top plate section 13 functions as a cooling member 41. The top plate section 13 may be made of a material with high thermal conductivity (e.g., metal). In the example of FIG. 24, a path 46, which is a part of the cooling section 40, is formed inside the top plate section 13. In the example of FIG. 24, an inlet 47 (see also FIG. 6) and an outlet 48 (see also FIG. 6) of the path 46 are formed on the upper surface of the top plate section 13. The inlet 47 is connected to the downstream end of the refrigerant supply pipe 42, and the outlet 48 is connected to the upstream end of the refrigerant recovery pipe 43.

[0108] The refrigerant cooling source 44 cools and circulates the refrigerant, thereby cooling the top plate portion 13 of the chamber 10. In other words, the cooling surface 40a, which is the lower surface of the top plate portion 13, is cooled.

[0109] An example of the flow of the reduced pressure drying process using the reduced pressure drying apparatus 1B is similar to the reduced pressure drying process in the first embodiment.

[0110] According to the sixth embodiment, the top plate 13 functions as the cooling member 41. Therefore, the number of parts of the reduced pressure drying apparatus 1B can be reduced, and the size and manufacturing cost of the reduced pressure drying apparatus 1B can be reduced. In addition, the distance between the path 46 and the cooling surface 40a can be reduced, so that the cooling unit 40 can cool the cooling surface 40a with higher efficiency.

[0111] <7. Seventh embodiment> 25 is a diagram illustrating an example of a vertical cross section of a reduced pressure drying apparatus 1C according to the seventh embodiment. The reduced pressure drying apparatus 1C has a similar configuration to the reduced pressure drying apparatus 1 except for the internal configuration of the cooling section 40.

[0112] As shown in FIG. 25, a part of the cooling section 40 of the reduced pressure drying apparatus 1C is located in the internal space 10s of the chamber 10. Specifically, the cooling member 41 is located in the internal space 10s of the chamber 10. The cooling member 41 is provided in the chamber 10 at a position facing the upper surface of the substrate 9 supported by the support portion 20. In other words, the cooling member 41 is provided above the substrate 9 supported by the support portion 20. The cooling member 41 is provided in the chamber 10 with its thickness direction aligned along the up-down direction. The cooling member 41 is fixed to the chamber 10 through a fixing portion (not shown). The cooling member 41 may be fixed to the top plate portion 13 of the chamber 10 by a fixing portion such as a screw. In the seventh embodiment, the lower surface of the cooling member 41 corresponds to the cooling surface 40a.

[0113] 25, the refrigerant supply pipe 42 and the refrigerant recovery pipe 43 pass through the top plate portion 13, and the refrigerant cooling source 44 is provided outside the chamber 10. The refrigerant cooling source 44 cools and circulates the refrigerant, thereby cooling the cooling member 41. That is, the cooling surface 40a of the cooling member 41 is cooled.

[0114] In the example of FIG. 25, the cooling member 41 has a size larger than the substrate 9 in a plan view. The cooling surface 40a of the cooling member 41 may have a rectangular shape similar to that of the substrate 9 in a plan view. In this case, the long side of the cooling surface 40a is longer than the long side of the substrate 9, and the short side of the cooling surface 40a is longer than the short side of the substrate 9. In this way, the cooling surface 40a can face the entire upper surface of the substrate 9 in the up-down direction. The cooling surface 40a may also have a square shape in a plan view. In this case, one side of the cooling surface 40a may be longer than the short side of the substrate 9. In this way, regardless of the orientation of the substrate 9 arranged on the support part 20, the cooling surface 40a is larger than the substrate 9 in a plan view. Therefore, regardless of the orientation of the substrate 9, the cooling surface 40a can face the entire upper surface of the substrate 9.

[0115] An example of the flow of the reduced pressure drying process using the reduced pressure drying apparatus 1C is similar to the reduced pressure drying process in the first embodiment.

[0116] According to the seventh embodiment, the cooling surface 40a is the lower surface of the cooling member 41 that is separate from the chamber 10. Therefore, the material of the cooling member 41 having the cooling surface 40a can be selected separately from the specification requirements for the chamber 10. In other words, the selectivity of the material of the cooling member 41 can be improved. In addition, since the cooling surface 40a is the lower surface of the cooling member 41, the distance between the low-temperature portion of the cooling unit 40 (path 46 in this case) and the cooling surface 40a can be narrowed. Therefore, the cooling unit 40 can cool the cooling surface 40a with higher efficiency.

[0117] <8. Eighth Embodiment> FIG. 26 is a diagram showing an example of a vertical cross section of a reduced pressure drying apparatus 1D according to the eighth embodiment. The reduced pressure drying apparatus 1D has a similar configuration to the reduced pressure drying apparatus 1C, except for the object to be raised and lowered by the first lifting section 100. As shown in FIG. 26, the first lifting section 100 raises and lowers the cooling section 40. Specifically, the first lifting section 100 raises and lowers the cooling member 41 of the cooling section 40 between an upper position H11 and a lower position H12. The lower position H12 is the position of the cooling member 41 when the distance between the substrate 9 and the cooling surface 40a becomes the first distance. In FIG. 26, the cooling member 41 located at the lower position H12 is shown by a virtual line. The upper position H11 is the position of the cooling member 41 when the distance between the substrate 9 and the cooling surface 40a becomes the second distance. In other words, the first lifting section 100 raises and lowers the cooling member 41 between a first state in which the distance between the substrate 9 and the cooling surface 40a is a first distance, and a second state in which the distance between the substrate 9 and the cooling surface 40a is a second distance.

[0118] 26, the support portion 20 is located at the lowered position H2 referred to in the first to seventh embodiments. That is, the substrate 9 supported by the support portion 20 is located at a position lower than the upper end of the side surface straightening plates 51, and is surrounded by the four side surface straightening plates 51. In the eighth embodiment, the substrate 9 is surrounded by the four side surface straightening plates 51 in both a first state in which the distance between the substrate 9 and the cooling surface 40a is a first distance, and a second state in which the distance between the substrate 9 and the cooling surface 40a is a second distance.

[0119] The lowered position H12 may be a position where the cooling surface 40a of the cooling member 41 is lower than the upper end of the side surface straightening plate 51. In other words, the cooling member 41 has a size smaller than the space surrounded by the four side surface straightening plates 51 in a plan view.

[0120] The raised position H11 is a position where the cooling surface 40a of the cooling member 41 is higher than the upper end of the side surface current plate 51. When the cooling member 41 is located at the raised position H11, the distance between the cooling surface 40a and the upper end of the side surface current plate 51 may be, for example, two or more times the first distance, or may be five or more times the first distance. This allows the gas directly above the substrate 9 to easily flow from the upper end side of the side surface current plate 51 into the space between the side surface current plate 51 and the side wall portion 12 of the chamber 10.

[0121] A driving device such as a linear motor or an air cylinder is applied to the first lifting part 100. The main body part 100a of the first lifting part 100 is fixed to an apparatus frame (not shown) outside the chamber 10. The moving part 100b of the first lifting part 100 can move, for example, in the vertical direction with respect to the main body part 100a. For example, a rod-shaped member or the like is applied to the moving part 100b. The moving part 100b is positioned, for example, in a state where it is inserted into the through-hole 13h of the top plate part 13 of the chamber 10. And, for example, a cooling member 41 is fixed to the lower end part of the moving part 100b. Here, for example, if a bellows or the like is provided between the upper surface of the top plate part 13 and the moving part 100b, the gap between the top plate part 13 and the moving part 100b can be sealed.

[0122] An example of the flow of the reduced pressure drying process using the reduced pressure drying apparatus 1D is similar to the reduced pressure drying process in the first embodiment. However, in the first gap adjustment process (step S3), the first lifting unit 100 lowers the cooling member 41 to the lowered position H12 so that the gap between the substrate 9 and the cooling surface 40a becomes the first gap. In addition, in the second gap adjustment process (step S5), the first lifting unit 100 raises the cooling member 41 to the raised position H11 so that the gap between the substrate 9 and the cooling surface 40a becomes the second gap.

[0123] According to the eighth embodiment, the cooling member 41 is separate from the chamber 10. Therefore, similar to the seventh embodiment, it is possible to improve the selectivity of the material of the cooling member 41. Furthermore, since the cooling surface 40a is the lower surface of the cooling member 41, similar to the seventh embodiment, the cooling unit 40 can cool the cooling surface 40a with higher efficiency.

[0124] In the eighth embodiment, even in the first state in which the gap between the substrate 9 and the cooling surface 40a is the narrower first gap, the substrate 9 supported by the support portion 20 is surrounded by the four side surface straightening plates 51. Therefore, even in the first decompression process (step S4), the straightening function of the four side surface straightening plates 51 acts on the upper space 10s1 between the substrate 9 and the cooling surface 40a. This makes it possible to further suppress the occurrence of uneven drying.

[0125] <9. Variations> The present disclosure is not limited to the above-described embodiments, and various modifications and improvements can be made without departing from the gist of the present disclosure.

[0126] In the above embodiments, the cooling unit 40 uses a refrigerant to cool the cooling surface 40a, but the cooling principle of the cooling unit is not limited as long as the cooling unit is configured so that the temperature of the outer region RO is higher than the temperature of the facing region RC. For example, instead of a configuration using a refrigerant, a configuration using a Peltier element may be applied. In that case, the cooling unit can be configured so that the temperature of the outer region RO is higher than the temperature of the facing region RC by at least one of optimizing the position where the Peltier element is attached in a plan view and optimizing the temperature control of the multiple Peltier elements. The method of attaching the Peltier element is not particularly limited, but for example, the Peltier element may be embedded in the top plate portion 13.

[0127] In each of the above embodiments, the first lifting unit 100 lifts and lowers the support unit 20 or the cooling unit 40, but may lift and lower both the support unit 20 and the cooling unit 40. In short, the first lifting unit 100 only needs to lift and lower at least one of the support unit 20 and the cooling surface 40a between a first state in which the distance between the substrate 9 supported by the support unit 20 and the cooling surface 40a is a first distance, and a second state in which the distance between the substrate 9 supported by the support unit 20 and the cooling surface 40a is a second distance wider than the first distance.

[0128] In the above embodiments, for example, the chamber 10 has four exhaust ports 16a, 16b, 16c, and 16d, but this is not limited to this. For example, the number of exhaust ports in the chamber 10 may be any of one to three, and five or more. Also, for example, the individual valves Va, Vb, Vc, and Vd may not be required.

[0129] In each of the above-described embodiments, the reduced-pressure drying apparatuses 1, 1A to 1D dry the coating film 90 on the substrate 9 by reducing pressure, but this is not limiting. For example, the reduced-pressure drying apparatuses 1, 1A to 1D may dry the coating film 90 on the substrate 9 by reducing pressure and heating.

[0130] In each of the above embodiments, the side wall portion 12 of the chamber 10 is provided with the loading / unloading port 14 for the substrate 9, but the present invention is not limited thereto. For example, a structure may be adopted in which the four side wall portions 12 and the top plate portion 13 of the chamber 10 form an integrated lid portion, and the lid portion can be separated from the bottom plate portion 11 and retreated upward. In this case, for example, the lid portion may be moved up and down by the opening / closing drive portion 16 or the like. The chamber 10 can be selectively set to a state in which the lid portion contacts the bottom plate portion 11 via a sealing material such as an O-ring to seal the internal space 10s (sealed state), and a state in which the lid portion separates upward from the bottom plate portion 11 to open the internal space 10s (open state). Here, when the chamber 10 is in the open state, the substrate 9 can be loaded into the internal space 10s of the chamber 10 and the substrate 9 can be unloaded from the internal space 10s of the chamber 10. When the chamber 10 is in a closed state, the coating film 90 on the substrate 9 can be dried by reducing pressure by exhausting air from the internal space 10s and supplying air to the internal space 10s.

[0131] In each of the above-described embodiments, for example, the support portion 20 may have various forms. For example, the multiple support plates 21 may be one integral support plate 21.

[0132] In each of the above embodiments, for example, the bottom flow plate 50 and the side flow plate 51 may be omitted.

[0133] In each of the above embodiments, for example, various operations in the reduced pressure drying apparatus 1 may be started or ended in response to, for example, a user action on the input unit 804 or a signal input from an external device to the communication unit 806.

[0134] In each of the above-described embodiments, for example, at least a part of the functional configuration realized in the control unit 80 may be configured with hardware such as a dedicated electronic circuit.

[0135] It goes without saying that all or part of the components constituting the above-described embodiments and various modified examples can be appropriately combined to the extent that no contradictions occur. [Explanation of symbols]

[0136] 1, 1A~1D, 1H, 1N, 1T Reduced pressure drying equipment 10. Chamber 13 Top plate 20 Support part 30 Pressure reducing mechanism 40 Cooling section 40a cooling surface 44 Refrigerant cooling source Route 46, 46a~46d 47, 47a~47d Entrance 48,48a~48d Exit 80 Control section 9 Substrate 90 Coating film F1 1st side (top side) Opposing area RC Outer area RO

Claims

1. A reduced pressure drying apparatus for drying a coating film applied on an upper surface of a substrate, comprising: a chamber for housing the substrate; a support for supporting the substrate within the chamber; a pressure reducing mechanism that sucks gas from the chamber to reduce the pressure within the chamber; a cooling section that faces the upper surface of the substrate supported by the support section and cools a cooling surface that is larger than the substrate; Equipped with the cooling surface of the cooling unit has a facing region facing a region of the substrate on which the coating film can be formed in a thickness direction of the substrate, and an outer region outside the facing region; The cooling section is configured so that a temperature of the outer region is higher than a temperature of the facing region, the cooling unit has a path through which a coolant flows to cool the cooling surface, an inlet through which the coolant is introduced into the path, and an outlet through which the coolant is discharged from the path, A reduced pressure drying apparatus, wherein, in a plan view, the path of the cooling section spans the opposing region and the outer region, the inlet of the cooling section is located in the opposing region, and the outlet of the cooling section is located in the outer region.

2. The reduced pressure drying apparatus according to claim 1 , wherein the path of the cooling section extends in a spiral shape in a plan view.

3. The reduced pressure drying apparatus according to claim 1 , wherein the cooling section has a heat insulating member located in the outer region in a plan view, the heat insulating member being located so as to separate the path and the cooling surface.

4. The reduced pressure drying apparatus according to claim 1 , wherein the cooling section has a heater located in the outer region in a plan view.

Citation Information

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