Light emitting device, projector

Abstract

To provide a light emitting device that can reduce a malfunction due to an etching rate difference, a method for manufacturing a light emitting device, and a projector.SOLUTION: A light emitting device of the present invention comprises a substrate, a first light emitting unit, a second light emitting unit, a first electrode, a second electrode, a first protective layer, and a second protective layer. In plan view seen from a normal direction of the substrate, the area of the first electrode is larger than the area of the second electrode. The first protective layer has a first through hole. The second protective layer has a second through hole. The first through hole includes a first hole and a second hole. The second through hole includes a third hole and a fourth hole. The first opening area of the first hole on the most opposite side from the substrate is larger than the second opening area of the second hole on the most substrate side. The third opening area of the third hole on the most opposite side from the substrate is larger than the fourth opening area of the fourth hole on the most substrate side. In plan view, an outer edge of a second opening overlaps the first electrode, and an outer edge of a fourth opening overlaps the second electrode. The second opening area is larger than the fourth opening area.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a light emitting device, a method for manufacturing a light emitting device, and a projector. [Background technology]

[0002] Patent Document 1 below discloses a light emitting device having a light emitting section made of a plurality of nanocolumns provided on a substrate. In this light emitting device, the light emitting sections that emit different colors of light are formed on the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2013-239718 A Summary of the Invention [Problem to be solved by the invention]

[0004] In the above light-emitting device, it is possible to make the size of the light-emitting area different for each light-emitting unit of different color light. The size of the light-emitting area is determined by the diameter of the opening formed in the protective film that covers the light-emitting unit. Therefore, it is necessary to form a large opening in the protective film for the light-emitting unit with a large light-emitting area, and it is necessary to form a small opening in the protective film for the light-emitting unit with a small light-emitting area.

[0005] However, when forming openings of different sizes in a protective film by etching, it is difficult to make the etching rates uniform. Therefore, if the etching time is adjusted to match the opening where etching proceeds quickly, the etching time of the other opening will be insufficient. Alternatively, if the etching time is adjusted to match the opening where etching proceeds slowly, the etching time of the other opening will be too long, and the underlying layer will be damaged by the etching. [Means for solving the problem]

[0006] In order to solve the above problems, according to one aspect of the present invention, there is provided a semiconductor device comprising: a substrate; a first light-emitting portion provided on the substrate; a second light-emitting portion provided on the substrate; a first electrode provided on a side of the first light-emitting portion opposite to the substrate; a second electrode provided on a side of the second light-emitting portion opposite to the substrate; a first protective layer covering the first light-emitting portion and the first electrode; and a second protective layer covering the second light-emitting portion and the second electrode, wherein in a plan view seen from a normal direction of the substrate, an area of ​​the first electrode is larger than an area of ​​the second electrode, the first protective layer has a first through-hole and the second protective layer has a second through-hole, the first through-hole being a first hole and a second through-hole being a second through-hole. a second hole located on the opposite side from the substrate, the second through hole including a third hole and a fourth hole located on the substrate side of the third hole, a first opening area of ​​the first opening located on the opposite side from the substrate in the first hole is larger than a second opening area of ​​the second opening located on the opposite side from the substrate in the second hole, a third opening area of ​​the third opening located on the opposite side from the substrate in the third hole is larger than a fourth opening area of ​​a fourth opening located on the opposite side from the substrate in the fourth hole, an outer edge of the second opening overlaps the first electrode and an outer edge of the fourth opening overlaps the second electrode, and the second opening area is larger than the fourth opening area.

[0007] According to one aspect of the present invention, a method for manufacturing a semiconductor device includes the steps of: forming a first light-emitting section and a second light-emitting section on a substrate; forming a first electrode on the side of the first light-emitting section opposite the substrate; forming a second electrode having an area smaller than that of the first electrode on the side of the second light-emitting section opposite the substrate; forming a first protective layer on the substrate so as to cover the first light-emitting section and the first electrode; forming a second protective layer on the substrate so as to cover the second light-emitting section and the second electrode; the second protective layer and the second protective layer; forming a second hole having an opening area smaller than that of the first hole in a bottom surface of the first hole formed at the first position to form a first through hole exposing a portion of the first electrode; and forming a third hole having an opening area smaller than that of the second hole in a bottom surface of the first hole formed at the second position to form a second through hole exposing a portion of the second electrode.

[0008] According to one aspect of the present invention, there is provided a projector including the light emitting device of the above aspect. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic configuration diagram of a projector according to an embodiment. [Diagram 2] FIG. 2 is a plan view showing a schematic configuration of a light-emitting element. [Diagram 3] FIG. 2 is a diagram showing a configuration of a main part of a light-emitting element. [Figure 4A] 1A to 1C are diagrams showing main steps of a manufacturing process for a light emitting device. [Figure 4B] 1A to 1C are diagrams showing main steps of a manufacturing process for a light emitting device. [Figure 4C] 1A to 1C are diagrams showing main steps of a manufacturing process for a light emitting device. [Figure 4D] 1A to 1C are diagrams showing main steps of a manufacturing process for a light emitting device. [Figure 4E] 1A to 1C are diagrams showing main steps of a manufacturing process for a light emitting device. [Diagram 5]FIG. 11 is a cross-sectional view showing a configuration of a light-emitting element according to a modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following drawings, the dimensions of components may be shown on different scales to make each component easier to see. Fig. 1 is a schematic diagram of a projector according to this embodiment.

[0011] 1, a projector 1 of this embodiment is a projection type image display device that projects an image onto a screen SC. The projector 1 includes a light emitting device 12, a light modulation device 5, and a projection optical device 4. The configuration of the light emitting device 12 will be described in detail later.

[0012] Hereinafter, the optical axis that coincides with the normal line passing through the center of light-emitting region 12R in light-emitting device 12 and through which the chief ray of light flux L emitted from light-emitting region 12R passes is referred to as optical axis AX1.

[0013] The configuration of each part will be described below using an XYZ Cartesian coordinate system, where the axis parallel to the long side of light-emitting area 12R, which has a rectangular planar shape as viewed from the direction of optical axis AX1, is defined as the X axis, the axis parallel to the short side of the light-emitting area is defined as the Y axis, and the axis perpendicular to the X and Y axes is defined as the Z axis. The Z axis is parallel to optical axis AX1.

[0014] The light modulation device 5 modulates the light flux L emitted from the light emitting device 12 according to image information to generate image light. The light modulation device 5 has an incident side polarizing plate 6, a liquid crystal display element 7, and an exit side polarizing plate 8. When viewed from the Z-axis direction, the planar shape of the image forming region 7R of the liquid crystal display element 7 is rectangular. As described above, the planar shape of the light emitting region 12R of the light emitting device 12 is rectangular, and the planar shapes of the image forming region 7R and the light emitting region 12R are approximately similar. The area of ​​the light emitting region 12R is the same as the area of ​​the image forming region 7R or slightly larger than the area of ​​the image forming region 7R.

[0015] The projection optical device 4 projects the image light emitted from the light modulation device 5 onto a projection surface such as a screen SC. The projection optical device 4 is composed of one or more projection lenses.

[0016] The light emitting device 12 of this embodiment will now be described.

[0017] 1, the light emitting device 12 includes a light emitting element 20 and a heat sink 21. The light emitting element 20 has a first surface 20a and a second surface 20b, and emits a luminous flux L from the first surface 20a. The heat sink 21 is provided on the second surface 20b of the light emitting element 20 to dissipate heat generated by the light emitting element 20. The heat sink 21 may be omitted as necessary.

[0018] Fig. 2 is a plan view showing a schematic configuration of the light-emitting element 20. In Fig. 2, in order to make the drawing easier to see, only some of the light-emitting sections 30 in the light-emitting region 12R of the light-emitting element 20 are shown, and the other light-emitting sections 30 are not shown.

[0019] As shown in Fig. 2, the light emitting element 20 has a plurality of light emitting sections 30 arranged in an array. In this embodiment, the light emitting sections 30 are arranged in a matrix along the X-axis or the Y-axis. The plurality of light emitting sections 30 include a red light emitting section 30R that emits red light, a green light emitting section 30G that emits green light, and a blue light emitting section 30B that emits blue light. The light emitting device 12 of this embodiment can constitute a self-luminous imager that forms an image using each light emitting section 30 as a pixel.

[0020] In this embodiment, the white balance of the image is adjusted by making the light emitting area of ​​the blue light emitting unit 30B larger than the light emitting area of ​​the red light emitting unit 30R. The light emitting areas of the red light emitting unit 30R and the green light emitting unit 30G are set to the same size.

[0021] Fig. 3 is a diagram showing a configuration of a main part of the light-emitting element 20. Fig. 3 is a diagram showing a portion including the blue light-emitting section 30B and the red light-emitting section 30R among the multiple light-emitting sections 30. The upper view of Fig. 3 is a plan view of the blue light-emitting section 30B and the red light-emitting section 30R viewed from the +Z side, and the lower view of Fig. 3 is a cross-sectional view of the blue light-emitting section 30B and the red light-emitting section 30R.

[0022] As shown in FIG. 3, the light-emitting element 20 has a base (substrate) 10, a semiconductor layer 11, a blue light-emitting section (first light-emitting section) 30B, a red light-emitting section (second light-emitting section) 30R, a first protective layer 51, a second protective layer 52, a lower layer electrode 60B, an upper layer electrode (first electrode) 70B, an extraction electrode 71B, a lower layer electrode 60R, an upper layer electrode (second electrode) 70R, an extraction electrode 71R, a first wiring 81, and a second wiring 82.

[0023] In this embodiment, in the Z-axis direction, the direction in which the nano-columns that constitute the blue light-emitting section 30B and the red light-emitting section 30R, which will be described later, are stacked from the base 10 is referred to as "up," and the direction from the base 10 toward the opposite side of the blue light-emitting section 30B and the red light-emitting section 30R is referred to as "down."

[0024] The base 10 is a substrate mainly composed of, for example, a silicon (Si) substrate, a gallium nitride (GaN) substrate, or a sapphire substrate. A reflective layer, such as a laminate in which AlGaN layers and GaN layers are alternately laminated, or a laminate in which AlInN layers and GaN layers are alternately laminated, is formed on the surface of the base 10. The reflective layer reflects light generated in the light-emitting layers of the blue light-emitting section 30B and the red light-emitting section 30R, which will be described later, toward the opposite side of the base 10.

[0025] The semiconductor layer 11 is provided on a substrate 10. The semiconductor layer 11 is, for example, an n-type GaN layer, specifically, a GaN layer doped with Si.

[0026] The multiple light emitting sections 30 shown in FIG. 2 are formed in an island shape on the base 10 via the semiconductor layer 11. Adjacent light emitting sections 30 are electrically isolated by an element isolation layer (not shown) provided around the semiconductor layer 11. The element isolation layer is composed of, for example, an i-type GaN layer, a silicon oxide layer, a silicon nitride layer, or the like. The light emitting sections 30 are formed in an island shape by patterning using etching. In other words, the blue light emitting section 30B and the red light emitting section 30R are electrically isolated from each other.

[0027] The blue light emitting section 30B has a plurality of nanocolumns (first columnar sections) 31 and a light propagation layer 36. The nanocolumns 31 are columnar crystal structures that protrude and extend above the semiconductor layer 11. The planar shape of the nanocolumns 31 is a polygon, a circle, an ellipse, or the like. In this embodiment, as shown in FIG. 2, the planar shape of the nanocolumns 31 is a circle. The diameter of the nanocolumns 31 is on the order of nm, specifically, for example, 10 nm or more and 500 nm or less. The dimension of the nanocolumns 31 in the stacking direction, that is, the height of the nanocolumns 31, is, for example, 0.1 μm or more and 5 μm or less.

[0028] It should be noted that the "diameter of nanocolumn 31" refers to the diameter of the circle when the planar shape of nanocolumn 31 is circular, and refers to the diameter of the smallest including circle when the planar shape of nanocolumn 31 is not circular. For example, when the planar shape of nanocolumn 31 is polygonal, the diameter of nanocolumn 31 is the diameter of the smallest circle that includes the polygon, and when the planar shape of nanocolumn 31 is an ellipse, the diameter of nanocolumn 31 is the diameter of the smallest circle that includes the ellipse.

[0029] The "center of nanocolumn 31" refers to the center of the circle if the planar shape of nanocolumn 31 is circular, and refers to the center of the smallest inclusive circle if the planar shape of nanocolumn 31 is not circular. For example, if the planar shape of nanocolumn 31 is polygonal, the center of nanocolumn 31 is the center of the smallest circle that contains the polygon inside, and if the planar shape of nanocolumn 31 is an ellipse, the center of nanocolumn 31 is the center of the smallest circle that contains the ellipse inside.

[0030] The multiple nanocolumns 31 are arranged at a predetermined pitch in a predetermined direction in a plan view. The nanocolumns 31 can exert a photonic crystal effect, confining the light emitted by the light-emitting layer in the in-plane direction of the base 10 and emitting it in the stacking direction. The "stacking direction" refers to the direction along the normal to the surface of the base 10 on which the stack is provided, i.e., the substrate surface. The "in-plane direction of the base 10" refers to the direction along a plane perpendicular to the stacking direction.

[0031] 3, the nanocolumn 31 has a first semiconductor layer 32, a light emitting layer (first light emitting layer) 33, and a second semiconductor layer 34. Each layer constituting the nanocolumn 31 is formed by epitaxial growth as described later.

[0032] The first semiconductor layer 32 is provided on the semiconductor layer 11. The first semiconductor layer 32 is provided between the base 10 and the light emitting layer 33. The first semiconductor layer 32 is made of, for example, an n-type GaN layer doped with Si. In this embodiment, the first semiconductor layer 32 is made of the same material as the semiconductor layer 11.

[0033] The light emitting layer 33 is provided on the first semiconductor layer 32. The light emitting layer 33 is provided between the first semiconductor layer 32 and the second semiconductor layer 34. The light emitting layer 33 has a quantum well structure composed of, for example, a GaN layer and an InGaN layer. The light emitting layer 33 emits light when a current is injected through the first semiconductor layer 32 and the second semiconductor layer 34. The number of GaN layers and InGaN layers constituting the light emitting layer 33 is not particularly limited.

[0034] In this embodiment, the light emitting layer 33 emits blue light in the blue wavelength band of, for example, 430 nm to 470 nm.

[0035] The second semiconductor layer 34 is provided on the light emitting layer 33. The second semiconductor layer 34 is a layer having a conductivity type different from that of the first semiconductor layer 32. The second semiconductor layer 34 is composed of, for example, a p-type GaN layer doped with Mg. The first semiconductor layer 32 and the second semiconductor layer 34 function as cladding layers having a function of confining light within the light emitting layer 33.

[0036] The light propagation layer 36 is provided to surround the nanocolumns 31 in plan view. The refractive index of the light propagation layer 36 is lower than that of the light emitting layer 33. The light propagation layer 36 is, for example, a GaN layer or a titanium oxide (TiO2) layer. The GaN layer that is the light propagation layer 36 may be i-type, n-type, or p-type. The light propagation layer 36 can propagate the light generated in the light emitting layer 33 in the planar direction.

[0037] In the blue light-emitting section 30B, a pin diode is formed by a stack of a p-type second semiconductor layer 34, a light-emitting layer 33 that is not doped with impurities, and an n-type first semiconductor layer 32. The band gaps of the first semiconductor layer 32 and the second semiconductor layer 34 are larger than the band gap of the light-emitting layer 33. In the blue light-emitting section 30B, when a forward bias voltage of the pin diode is applied between the lower electrode 60B and the upper electrode 70B to inject a current, recombination of electrons and holes occurs in the light-emitting layer 33. This recombination generates light.

[0038] The light generated in the light emitting layer 33 is propagated through the light propagation layer 36 in the in-plane direction of the substrate 10 by the first semiconductor layer 32 and the second semiconductor layer 34. At this time, the light forms a standing wave due to the effect of the photonic crystal of the nanocolumns 31, and is confined in the in-plane direction of the substrate 10. The confined light receives gain in the light emitting layer 33 and oscillates as a laser. That is, the light generated in the light emitting layer 33 resonates in the in-plane direction of the substrate 10 by the nanocolumns 31, and oscillates as a laser. Specifically, the light generated in the light emitting layer 33 resonates in the in-plane direction of the substrate 10 in a resonator formed by a plurality of nanocolumns 31, and oscillates as a laser. Thereafter, the +1st order diffracted light and -1st order diffracted light generated by the resonance travel as laser light in the stacking direction (Z-axis direction).

[0039] In the light-emitting element 20, the refractive index and thickness of the first semiconductor layer 32, the second semiconductor layer 34 and the light-emitting layer 33 are designed so that the intensity of light propagating in the in-plane direction is greatest in the light-emitting layer 33 in the Z-axis direction.

[0040] In this embodiment, among the laser beams that travel in the stacking direction, the laser beam that travels toward the base 10 side is reflected by a reflective layer (not shown) formed on the surface of the base 10 and travels upward. This allows the blue light-emitting unit 30B to emit light from the upper side.

[0041] 3, an insulating layer 35 is provided on the semiconductor layer 11. The insulating layer 35 is provided between the light propagation layer 36 and the semiconductor layer 11. The insulating layer 35 functions as a mask for growing a film that constitutes the nano-columns 31 in the manufacturing process of the blue light-emitting section 30B. The insulating layer 35 is composed of, for example, a silicon oxide layer, a silicon nitride layer, or the like.

[0042] The first protective layer 51 is provided on the base 10 (semiconductor layer 11) to cover the blue light-emitting section 30B. The first protective layer 51 is, for example, a silicon oxide layer. The first protective layer 51 has a function of flattening the upper surface of the base 10 and protecting the blue light-emitting section 30B from impacts and the like. The first protective layer 51 is provided with a contact hole (first through hole) 151 that exposes the upper side of the blue light-emitting section 30B.

[0043] The lower electrode 60B is provided on the semiconductor layer 11 on the side of the blue light-emitting section 30B. The lower electrode 60B is electrically connected to the first semiconductor layer 32 of the nanocolumn 31 through the semiconductor layer 11. The lower electrode 60B is one of the electrodes for injecting a current into the light-emitting layer 33. As the lower electrode 60B, for example, a metal layer such as Ni, Ti, Cr, Pt or Au, or a laminated metal film obtained by laminating these layers is used.

[0044] The upper electrode 70B is provided on the blue light-emitting section 30B. The upper electrode 70B is the other electrode for injecting a current into the light-emitting layer 33 of the nano-columns 31. The upper electrode 70B is provided so as to contact the nano-columns 31 and part of the light propagation layer 36. A plurality of upper electrodes 70B are provided according to the number of blue light-emitting sections 30B. A part of the upper electrode 70B is exposed in a contact hole 151 provided in the first protective layer 51.

[0045] The upper electrode 70B may be a metal layer such as Ni, Ti, Cr, Pt, or Au, or a laminated metal film formed by laminating these metal layers. The upper electrode 70B is an electrode for improving the electrical conductivity between the extraction electrode 71B and the blue light-emitting unit 30B. The upper electrode 70B is a thin film having a thickness of about several tens of nanometers, and is therefore optically transparent.

[0046] The extraction electrode 71B is connected to the upper layer electrode 70B exposed in the contact hole 151. The extraction electrode 71B is extended onto the first protective layer 51 via the contact hole 151.

[0047] The extraction electrode 71B is a light-transmitting conductive layer made of, for example, an ITO (Indium Tin Oxide) layer or an IZO (Indium Zinc Oxide) layer. Light generated in the light-emitting layer 33 passes through the upper electrode 70B and the extraction electrode 71B and is emitted upward.

[0048] The first wiring 81 is laminated on the extraction electrode 71B. The first wiring 81 is electrically connected to the second semiconductor layer 34 of the nano-column 31 in the blue light-emitting section 30B via the extraction electrode 71B and the upper electrode 70B. As the first wiring 81, for example, a metal layer such as Ni, Ti, Cr, Pt, or Au, or a laminated metal film obtained by laminating these metal layers, etc., is used.

[0049] The first wiring 81 is connected, for example, via a wire, to a drive circuit provided in an area (not shown) on the base 10. The above-mentioned lower electrode 60B is connected, for example, via a wire, to a drive circuit provided in an area (not shown) on the base 10. Based on this configuration, the light emitting device 12 can inject a current into the light emitting layer 33 via the lower electrode 60B and the upper electrode 70B by driving the drive circuit, thereby causing the blue light emitting section 30B to emit light.

[0050] On the other hand, the red light-emitting section 30R has a plurality of nano-columns (second columnar sections) 41 and a light propagation layer 46. The red light-emitting section 30R has a similar configuration to the blue light-emitting section 30B, except that the color of light emitted by the red light-emitting section 30R is different from that of the blue light-emitting section 30B. Therefore, in the following, a description of the same configuration as that of the blue light-emitting section 30B will be omitted.

[0051] As shown in FIG. 3, the nanocolumn 41 includes a light emitting layer (second light emitting layer) 43 that emits red light.

[0052] The second protective layer 52 is provided on the base 10 (semiconductor layer 11) to cover the red light-emitting section 30R. The second protective layer 52 is made of the same material as the first protective layer 51. The second protective layer 52 has the function of flattening the upper surface of the base 10 and protecting the red light-emitting section 30R from impacts and the like. The second protective layer 52 is provided with a contact hole (second through hole) 152 that exposes the upper side of the red light-emitting section 30R.

[0053] The lower electrode 60R is provided on the semiconductor layer 11 on the side of the red light-emitting section 30R. The lower electrode 60R is one electrode for injecting a current into the light-emitting layer 43 of the nano-columns 41. The upper electrode 70R is provided on the red light-emitting section 30R. The upper electrode 70R is the other electrode for injecting a current into the light-emitting layer 43 of the nano-columns 41. The upper electrode 70R is provided so as to contact the nano-columns 41 and a part of the light propagation layer 46. A plurality of upper electrodes 70R are provided according to the number of the red light-emitting sections 30R. A part of the upper electrode 70R is exposed in a contact hole 152 provided in the second protective layer 52.

[0054] The extraction electrode 71R is connected to the upper layer electrode 70R exposed in the contact hole 152. The extraction electrode 71R is extended onto the second protective layer 52 via the contact hole 152.

[0055] The second wiring 82 is laminated on the extraction electrode 71R. The second wiring 82 is electrically connected to the nano-columns 41 of the red light-emitting section 30R via the extraction electrode 71R and the upper electrode 70R.

[0056] The second wiring 82 is connected, for example, via a wire, to a drive circuit provided in an area (not shown) on the base 10. The above-mentioned lower electrode 60R is connected, for example, via a wire, to a drive circuit provided in an area (not shown) on the base 10. Based on this configuration, the light-emitting element 20 can inject a current into the light-emitting layer 43 via the lower electrode 60R and the upper electrode 70R by driving the drive circuit, thereby causing the red light-emitting unit 30R to emit light.

[0057] As described above, in the light emitting device 12 of this embodiment, the light emitting area of ​​the blue light emitting section 30B is set to be larger than the light emitting area of ​​the red light emitting section 30R in the light emitting element 20. Here, the size of the light emitting area is determined by the contact area between the nanocolumn and the electrode, that is, the size of the electrode formed on the nanocolumn. That is, in the case of this embodiment, the area of ​​the upper electrode 70B formed on the nanocolumn 31 of the blue light emitting section 30B is larger than the area of ​​the upper electrode 70R formed on the nanocolumn 41 of the red light emitting section 30R. Therefore, the opening diameter of the contact hole 151 exposing the upper electrode 70B is larger than the opening diameter of the contact hole 152 exposing the upper electrode 70R.

[0058] 3, contact hole 151 includes an upper hole (first hole) 1511 and a lower hole (second hole) 1512. Lower hole 1512 is located on the substrate 10 side (lower side) of upper hole 1511, and upper hole 1511 is located above lower hole 1512 (opposite side to substrate 10).

[0059] In this embodiment, contact hole 151 is formed by an etching process as described below. Contact hole 151 is formed by a two-stage etching process in which upper hole 1511 and lower hole 1512 are formed. The etching conditions for forming first protective layer 51 in upper hole 1511 are different from the etching conditions for forming first protective layer 51 in lower hole 1512. The etching process for contact hole 151 will be described later.

[0060] In this embodiment, upper hole 1511 has a tapered shape in which the inner diameter narrows toward the bottom. Therefore, in upper hole 1511, first opening 1511a, which is the upper opening end located on the opposite side (upper side) from base 10, has a maximum first opening area S1, and fifth opening 1511b, which is the lower opening end located closest to base 10, has a minimum fifth opening area S5.

[0061] Lower hole 1512 is formed in part of bottom surface 1513 of upper hole 1511. Lower hole 1512 exposes a part of upper layer electrode 70B. Bottom surface 1513 of upper hole 1511 is a flat surface. Since upper hole 1511 is formed by an etching process as described below, bottom surface 1513 being a flat surface does not mean a plane without irregularities such as a mirror surface, but a surface including fine irregularities that can generally be generated in an etching process.

[0062] In this embodiment, lower hole 1512 has a tapered shape in which the inner diameter narrows toward the bottom. Therefore, in lower hole 1512, the opening area of ​​the upper opening end located on the opposite side (upper side) from base 10 is the largest, and the second opening area S2 of second opening 1512a, which is the lower opening end located closest to base 10, is the smallest. The opening area of ​​the upper opening end of lower hole 1512 is smaller than fifth opening area S5 of upper hole 1511. In this embodiment, the first opening area S 1 of the upper hole 1511 is larger than the second opening area S 2 of the lower hole 1512 .

[0063] In this embodiment, the film thickness of the first protective layer 51 covering the upper electrode 70B is set to, for example, 600 nm to 1000 nm. Upper hole 1511 is formed so that the film thickness of the portion (bottom surface 1513) covering upper electrode 70B is approximately 1 / 4 to 1 / 6 the film thickness of first protective layer 51. Considering current leakage and the like, it is desirable to ensure that the film thickness of the portion covering upper electrode 70B is 150 nm or more.

[0064] For example, when the thickness of first protective layer 51 covering upper electrode 70B is 600 nm, the depth of upper hole 1511 may be set to 450 nm in order to cover upper electrode 70B with a thickness of 150 nm. When the thickness of first protective layer 51 covering upper electrode 70B is 1000 nm, the depth of upper hole 1511 may be set to 850 nm in order to cover upper electrode 70B with a thickness of 150 nm.

[0065] 3, contact hole 152 includes an upper hole (third hole) 1521 and a lower hole (fourth hole) 1522. Lower hole 1522 is located on the substrate 10 side (lower side) of upper hole 1521, and upper hole 1521 is located above lower hole 1522.

[0066] In this embodiment, contact hole 152 is formed by an etching process as described below. In contact hole 152, upper hole 1521 and lower hole 1522 are formed by a two-stage etching process. That is, the etching conditions for forming upper hole 1521 in second protective layer 52 are different from the etching conditions for forming lower hole 1522 in second protective layer 52. Upper hole 1521 is formed by the same etching process as upper hole 1511 of contact hole 151. Lower hole 1522 is formed by the same etching process as lower hole 1512 of contact hole 151. The etching process for contact hole 151 will be described later.

[0067] In this embodiment, upper hole 1521 has a tapered shape in which the inner diameter narrows toward the bottom. Therefore, in upper hole 1521, third opening area S3 of third opening 1521a, which is the upper opening end located on the opposite side (upper side) from base 10, is maximum, and sixth opening area S6 of sixth opening 1521b, which is the lower opening end located closest to base 10, is minimum.

[0068] Lower hole 1522 is formed in part of bottom surface 1523 of upper hole 1521. Lower hole 1522 exposes part of upper layer electrode 70R. Bottom surface 1523 of upper hole 1521 is a flat surface. Bottom surface 1523 being a flat surface means a surface that includes fine irregularities that may generally occur in an etching process.

[0069] In this embodiment, lower hole 1522 has a tapered shape in which the inner diameter narrows toward the bottom. Therefore, lower hole 1522 has a maximum opening area at the upper opening end located on the opposite side (upper side) from base 10, and a fourth opening area S4 of fourth opening 1522a, which is the lower opening end located closest to base 10, is a minimum. The opening area of ​​the upper opening end of lower hole 1522 is smaller than sixth opening area S6 of upper hole 1521. In this embodiment, the third opening area S3 of the upper hole 1521 is larger than the fourth opening area S4 of the lower hole 1522.

[0070] In this embodiment, a first opening area S1 of upper hole 1511 in contact hole 151 is equal to a third opening area S3 of upper hole 1521 in contact hole 152. A fifth opening area S5 of upper hole 1511 in contact hole 151 is equal to a sixth opening area S6 of upper hole 1521 in contact hole 152.

[0071] Thus, in this embodiment, upper hole 1511 of contact hole 151 and upper hole 1521 of contact hole 152 have the same opening shape. Upper hole 1511 and upper hole 1521 are holes etched at the same etching rate.

[0072] On the other hand, in this embodiment, lower hole 1512 of contact hole 151 and lower hole 1522 of contact hole 152 have opening shapes different from each other. Lower hole 1512 and lower hole 1522 are holes etched at different etching rates.

[0073] In this embodiment, second opening area S2 of lower hole 1512 in contact hole 151 is larger than fourth opening area S4 of lower hole 1522 in contact hole 152. This allows contact hole 151 to expose upper layer electrode 70B, which has a larger area than upper layer electrode 70R.

[0074] Here, a ratio between first opening area S1 of upper hole 1511 in contact hole 151 and third opening area S3 of upper hole 1521 in contact hole 152 is defined as a first area ratio. Also, a ratio between second opening area S2 of lower hole 1512 in contact hole 151 and fourth opening area S4 of lower hole 1522 in contact hole 152 is defined as a second area ratio.

[0075] As described above, upper hole 1511 and upper hole 1521 have the same opening shape, so the first area ratio is approximately 1. Furthermore, as described above, second opening area S2 is larger than fourth opening area S4, so the second area ratio is smaller than 1. For example, if second opening area S2 is twice as large as fourth opening area S4, the second area ratio is 0.5. Thus, in light emitting device 12 of the present embodiment, the first area ratio, which is the ratio between first opening area S1 and third opening area S3, is smaller than the second area ratio, which is the ratio between second opening area S2 and fourth opening area S4.

[0076] Contact hole 151 is formed at a position that exposes a portion of upper layer electrode 70B in plan view from the normal direction of the substrate constituting base 10. That is, contact hole 151 is formed such that outer edge 512 of second opening 1512a of lower hole 1512 of contact hole 151 overlaps upper layer electrode 70B in plan view from the normal direction of base 10. It is sufficient that outer edge 512 of second opening 1512a at least partially overlaps upper layer electrode 70B.

[0077] Contact hole 152 is formed at a position that exposes a portion of upper layer electrode 70R in plan view from the normal direction of the substrate constituting base 10. That is, contact hole 151 is formed such that outer edge 522 of fourth opening 1522a of lower hole 1522 of contact hole 152 overlaps upper layer electrode 70R in plan view from the normal direction of base 10. It is sufficient that outer edge 522 of fourth opening 1522a at least partially overlaps upper layer electrode 70R.

[0078] Next, a method for manufacturing the light emitting device 12 of this embodiment will be described. 4A to 4E are diagrams showing the main steps of the manufacturing process for the light emitting device 12. The following mainly describes the manufacturing process for the blue light emitting section 30B and the red light emitting section 30R.

[0079] First, as shown in FIG. 4A, a step of forming the light-emitting section 30 including the blue light-emitting section 30B and the red light-emitting section 30R in an island shape on the base 10 is performed. In the process of forming the light emitting section 30, first, the semiconductor layer 11 is epitaxially grown in a predetermined region on the base 10. Examples of the method for epitaxial growth include a metal organic chemical vapor deposition (MOCVD) method and a molecular beam epitaxy (MBE) method.

[0080] First, a plurality of nanocolumns 31 are formed on the semiconductor layer 11, and a light propagation layer 36 is formed around the nanocolumns 31.

[0081] Specifically, when forming the nanocolumns 31, an insulating layer 35 is formed on the semiconductor layer 11. The insulating layer 35 is formed, for example, by film formation using a CVD (Chemical Vapor Deposition) method or a sputtering method, and patterning using photolithography and etching (hereinafter also simply referred to as "patterning"). Using the insulating layer 35 with openings formed therein as a mask, the first semiconductor layer 32, the light emitting layer 33, and the second semiconductor layer 34 are epitaxially grown in this order on the semiconductor layer 11 by, for example, an MOCVD method or an MBE method, thereby forming the nanocolumns 31.

[0082] After the nanocolumns 31 are formed, the light propagation layer 36 is formed around the nanocolumns 31. The light propagation layer 36 is formed by an ELO (Epitaxial Lateral Overgrowth) method such as the MOCVD method or the MBE method.

[0083] Then, unnecessary nanocolumns 31 and light propagation layers 36 formed in areas other than the formation region of the blue light emitting section 30B are removed by a dry etching process using, for example, a Cl-based etching gas, thereby forming the blue light emitting section 30B on the semiconductor layer 11. Thereafter, the blue light emitting section 30B is formed on the upper electrode 70B. The blue light emitting section 30B is formed by, for example, film formation using a sputtering method or a vacuum deposition method, and patterning.

[0084] Furthermore, when forming the red light-emitting section 30R, similarly to the blue light-emitting section 30B, a plurality of nanocolumns 41 are formed on the semiconductor layer 11, a light propagation layer 46 is formed around the nanocolumns 41, and then unnecessary nanocolumns 41 and light propagation layers 46 formed outside the formation region of the red light-emitting section 30R are removed by a dry etching process, thereby forming the red light-emitting section 30R on the semiconductor layer 11. Then, an upper-layer electrode 70R is formed on the red light-emitting section 30R. In this embodiment, the area of ​​the upper-layer electrode 70R is smaller than the area of ​​the upper-layer electrode 70B.

[0085] 4B, a first protective layer 51 is formed on the base 10 so as to cover the blue light-emitting section 30B and the upper electrode 70B. A second protective layer 52 is formed on the base 10 so as to cover the red light-emitting section 30R and the upper electrode 70R. The first protective layer 51 and the second protective layer 52 are formed by film formation using, for example, spin coating. Therefore, the first protective layer 51 and the second protective layer 52 are made of the same material.

[0086] Subsequently, contact holes 151, 152 are respectively formed in the first protective layer 51 and the second protective layer 52. Although not shown, prior to forming the contact holes 151, 152, the first protective layer 51 and the second protective layer 52 are patterned into a predetermined shape.

[0087] 4C, upper hole 1511 as a first hole is formed in first protective layer 51 at first position P1 overlapping upper layer electrode 70B. In this embodiment, when upper hole 1511 is formed in first protective layer 51, upper hole (first hole) 1521 is simultaneously formed in second protective layer 52 at second position P2 overlapping upper layer electrode 70R. Upper hole 1511 and upper hole 1521 have similar opening shapes and are therefore formed under similar etching conditions.

[0088] 4D, lower hole 1512 serving as a second hole having a smaller opening area than upper hole 1511 is formed in bottom surface 1513 of upper hole 1511 formed at first position P1 to form contact hole 151 that exposes a portion of upper layer electrode 70B. Also, lower hole 1522 serving as a third hole having a smaller opening area than lower hole 1512 is formed in bottom surface 1523 of upper hole 1521 formed at second position P2 to form contact hole 152 that exposes a portion of upper layer electrode 70R.

[0089] In general, it is difficult to match the etching rates of holes with different opening areas. For example, the etching process for holes with large opening areas requires a larger amount of etching gas, so the etching time is shorter than that for holes with small opening areas. Therefore, when etching large and small holes at the same time, if the etching time is matched to the etching time of the large holes, which are relatively easy to etch, the etching time of the small holes, which are relatively difficult to etch, will be shorter, and the small holes will not be sufficiently etched, and etching residue will adhere to them, causing problems such as poor conductivity.

[0090] On the other hand, if the etching time is adjusted to match that of small diameter holes, in which etching progresses relatively slowly, the etching time for large diameter holes will be longer, and the electrodes exposed by the large diameter will be exposed to plasma for a long period of time, resulting in a problem of deterioration of characteristics due to etching damage.

[0091] In contrast, in the present embodiment, the upper holes 1511 and 1521 are formed in advance in the first protective layer 51 and the second protective layer 52, so that the thickness of the first protective layer 51 covering the upper electrode 70B and the thickness of the second protective layer 52 covering the upper electrode 70R are made small. As a result, the etching thickness when forming the lower holes 1512 and 1522 can be made smaller by the depth of the upper holes 1511 and 1521, compared to the case where the lower holes 1512 and 1522 are directly formed in the first protective layer 51 and the second protective layer 52 without forming the upper holes 1511 and 1512. Therefore, even when the contact holes 151 and 152 having different opening diameters are formed in the first protective layer 51 and the second protective layer 52, problems such as etching residues caused by the difference in etching rate and deterioration of characteristics caused by etching damage can be suppressed.

[0092] 4E, an extraction electrode 71B is formed on the upper layer electrode 70B exposed in the contact hole 151, and an extraction electrode 71R is formed on the upper layer electrode 70R exposed in the contact hole 152. The extraction electrodes 71B and 70R are formed by, for example, film formation and patterning using a sputtering method or a vacuum deposition method. Next, a first wiring 81 and a second wiring 82 are formed on the extraction electrodes 71B and 70R, respectively. The first wiring 81 and the second wiring 82 are formed by, for example, film formation and patterning using a sputtering method or a vacuum deposition method.

[0093] Then, lower-layer electrodes 60B, 60R (see FIG. 3) are formed in an area (not shown) different from the area where the light-emitting section 30 is formed. The lower-layer electrodes 60B, 60R are formed by, for example, film formation using a sputtering method or a vacuum deposition method, and patterning. The order of the process of forming the lower-layer electrodes 60B, 60R and the process of forming the lead-out electrodes 71B, 70R and the first wiring 81 and the second wiring 82 is not particularly limited.

[0094] Finally, for example, a driving circuit is mounted on the base 10 using a bonding member (not shown), and the driving circuit, the lower layer electrodes 60B, 60R of each light-emitting section 30, the first wiring 81, and the second wiring 82 are electrically connected by wires or the like. Then, a heat sink 21 is attached to the lower surface (the surface on the -Z side) of the base 10, thereby manufacturing the light-emitting device 12 of this embodiment.

[0095] (Effects of this embodiment) As described above, the light emitting device 12 of the present embodiment includes the base 10, the blue light emitting section 30B provided on the base 10, the red light emitting section 30R provided on the base 10, the upper electrode 70B provided on the side of the blue light emitting section 30B opposite to the base 10, the upper electrode 70R provided on the side of the red light emitting section 30R opposite to the base 10, the first protective layer 51 covering the blue light emitting section 30B and the upper electrode 70B, and the second protective layer 52 covering the red light emitting section 30R and the upper electrode 70R, the area of ​​the upper electrode 70B being larger than the area of ​​the upper electrode 70R, the first protective layer 51 having the contact hole 151 exposing a portion of the upper electrode 70B, and the second protective layer 52 having the contact hole 151 exposing a portion of the upper electrode 70R. It has a contact hole 152 to be exposed, contact hole 151 includes an upper hole 1511 and a lower hole 1512 located on the base 10 side of upper hole 1511, contact hole 152 includes an upper hole 1521 and a lower hole 1522 located on the base 10 side of upper hole 1521, a first opening area S1 located on the opposite side of upper hole 1511 from base 10 is larger than a second opening area S2 located on the opposite side of lower hole 1512 from base 10, a third opening area S3 located on the opposite side of upper hole 1521 from base 10 is larger than a fourth opening area S4 located on the opposite side of lower hole 1522 from base 10, and the second opening area S2 is larger than the fourth opening area S4.

[0096] In the light emitting device 12 of this embodiment, a part of the upper electrode 70B is exposed by the contact hole 151 including the upper hole 1511 and the lower hole 1512, and a part of the upper electrode 70R is exposed by the contact hole 152 including the upper hole 1521 and the lower hole 1522. Therefore, by forming the upper holes 1511 and 1521 in the first protective layer 51 and the second protective layer 52, the film thickness of the first protective layer 51 covering the upper electrode 70B and the film thickness of the second protective layer 52 covering the upper electrode 70R are reduced. As a result, the etching film thickness when forming the lower holes 1512 and 1522 with different hole diameters is suppressed compared to a configuration in which the lower holes 1512 and 1522 are directly formed in the first protective layer 51 and the second protective layer 52. Therefore, when the contact holes 151, 152 having different opening diameters are formed in the first protective layer 51 and the second protective layer 52, it is possible to suppress deterioration of characteristics due to etching residues and etching damage caused by the difference in etching rate. Therefore, the light emitting device 12 of this embodiment has high reliability with fewer defects caused by the difference in etching rate.

[0097] In the light emitting device 12 of the present embodiment, a first area ratio which is a ratio between the first opening area S1 and the third opening area S3 is smaller than a second area ratio which is a ratio between the second opening area S2 and the fourth opening area S4. According to this configuration, the opening shapes of upper holes 1511, 1521 can be made closer to each other between contact holes 151, 152. This allows upper holes 1511, 1521 to be etched in the same process, facilitating manufacture.

[0098] In the light emitting device 12 of this embodiment, the first opening area S1 is equal to the third opening area S3, and the fifth opening area S5 located closest to the base 10 in the upper hole 1511 is equal to the sixth opening area S6 located closest to the base 10 in the upper hole 1521. According to this configuration, the opening shapes of upper holes 1511, 1521 match, facilitating the process of forming the contact holes.

[0099] In light emitting device 12 of the present embodiment, lower hole 1512 is formed in a part of bottom surface 1513 of upper hole 1511 , and lower hole 1522 is formed in a part of bottom surface 1523 of upper hole 1521 . According to this configuration, after upper holes 1511, 1521 are formed in a first etching step, lower holes 1512, 1522 can be formed in a second etching step. This makes it possible to form contact holes 151, 152 in a two-stage etching step, thereby reducing problems caused by differences in etching rate.

[0100] In light emitting device 12 of the present embodiment, bottom surface 1513 of upper hole 1511 and bottom surface 1523 of upper hole 1521 are both flat surfaces. According to this configuration, the depth of upper holes 1511, 1521 can be easily controlled, and therefore upper holes 1511, 1521 can be easily manufactured.

[0101] In the light emitting device 12 of this embodiment, the blue light emitting section 30B has a plurality of nanocolumns 31 including a light emitting layer 33, and the red light emitting section 30R has a plurality of nanocolumns 41 including a light emitting layer 43. In this case, it is possible to provide a light emitting device 12 having a structure including a plurality of nanocolumns 31, 41 as the blue light emitting section 30B and the red light emitting section 30R.

[0102] A method for manufacturing light emitting device 12 of the present embodiment includes the steps of forming blue light emitting section 30B and red light emitting section 30R on base 10, forming upper electrode 70B on the side of blue light emitting section 30B opposite base 10, forming upper electrode 70R having a smaller area than upper electrode 70B on the side of red light emitting section 30R opposite base 10, forming first protective layer 51 on base 10 so as to cover blue light emitting section 30B and upper electrode 70B, forming second protective layer 52 on base 10 so as to cover red light emitting section 30R and upper electrode 70R, and forming upper electrode 70B in first protective layer 51. The method includes the steps of forming upper holes 1511, 1521 at a first position P1 where the upper protective layer 52 overlaps the upper electrode 70R and a second position P2 where the upper protective layer 52 overlaps the upper electrode 70R, forming a lower hole 1512 having a smaller opening area than the upper hole 1511 in a bottom surface 1513 of the upper hole 1511 formed at the first position P1 to form a contact hole 151 exposing a portion of the upper layer electrode 70B, and forming a lower hole 1522 having a smaller opening area than the lower hole 1512 in a bottom surface 1523 of the upper hole 1521 formed at the second position P2 to form a contact hole 152 exposing a portion of the upper layer electrode 70R.

[0103] According to the manufacturing method of light emitting device 12 of the present embodiment, by forming upper holes 1511, 1521 in advance in first protective layer 51 and second protective layer 52, it is possible to reduce the thickness of first protective layer 51 covering upper electrode 70B and the thickness of second protective layer 52 covering upper electrode 70R. This makes it possible to reduce the thickness of the protective film to be etched when forming lower holes 1512, 1522 whose diameters differ by the depth of upper holes 1511, 1521. Therefore, it is possible to reduce defects such as etching residues caused by differences in etching rate and deterioration of characteristics caused by etching damage, while forming contact holes 151, 152 with different opening diameters in first protective layer 51 and second protective layer 52. As a result, it is possible to provide a light emitting device 12 with excellent reliability.

[0104] The projector 1 of this embodiment includes a light emitting device 12 . According to this embodiment, by including the light emitting device 12 that suppresses defects due to the etching process, a projector 1 that is highly reliable and displays bright, high-quality images is provided.

[0105] The technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

[0106] For example, in the above embodiment, the light emitting section 30 is configured with a plurality of nano-columns, but the present invention is not limited to this. Fig. 5 is a cross-sectional view showing the configuration of a light emitting element 120 according to a modified example. As shown in Fig. 5, the light emitting element 120 of this modified example has a configuration in which a film-like crystal structure is laminated as the light emitting section 130. The light emitting section 130 has a configuration in which a film-like first semiconductor layer 132, a film-like light emitting layer 133, and a film-like second semiconductor layer 134 are laminated. In the configuration of the modified example, a material that does not have optical transparency is used as a protective layer that covers the light emitting section 130.

[0107] In the above embodiment, the light emitting layer is made of an InGaN material, but various semiconductor materials can be used as the light emitting layer depending on the wavelength of the emitted light. For example, AlGaN, AlGaAs, InGaAs, InGaAsP, InP, GaP, AlGaP, and other semiconductor materials can be used. In addition, the diameter or arrangement pitch of the photonic crystal structure can be changed as appropriate depending on the wavelength of the emitted light.

[0108] Furthermore, the specific descriptions of the shape, number, arrangement, material, and the like of each component of the light emitting device and the projector are not limited to those in the above embodiment and can be modified as appropriate.

[0109] In the above embodiment, the light emitting device according to the present invention is mounted on a projector, but the present invention is not limited thereto. For example, the light emitting device according to the present invention can be applied to a display device of a micro-LED display, a head mounted display, or a smart watch. The light emitting device according to the present invention can also be applied to lighting equipment, automobile headlights, etc.

[0110] The light emitting device according to the aspect of the present invention may have the following configuration. A light emitting device according to one embodiment of the present invention comprises a substrate, a first light emitting section provided on the substrate, a second light emitting section provided on the substrate, a first electrode provided on the first light emitting section on a side opposite the substrate, a second electrode provided on the second light emitting section on a side opposite the substrate, a first protective layer covering the first light emitting section and the first electrode, and a second protective layer covering the second light emitting section and the second electrode, wherein in a plan view seen from a normal direction of the substrate, an area of ​​the first electrode is larger than an area of ​​the second electrode, the first protective layer has a first through hole and the second protective layer has a second through hole, the first through hole being disposed on the first hole and the substrate side of the first hole. the second through hole includes a third hole and a fourth hole located on the substrate side of the third hole, a first opening area of ​​the first opening located on the opposite side from the substrate in the first hole is larger than a second opening area of ​​the second opening located on the opposite side from the substrate in the second hole, a third opening area of ​​the third opening located on the opposite side from the substrate in the third hole is larger than a fourth opening area of ​​the fourth opening located on the opposite side from the substrate in the fourth hole, and in a plan view, an outer edge of the second opening overlaps the first electrode and an outer edge of the fourth opening overlaps the second electrode, and the second opening area is larger than the fourth opening area.

[0111] In the light emitting device according to one aspect of the present invention, a first area ratio which is a ratio between the first opening area and the third opening area may be smaller than a second area ratio which is a ratio between the second opening area and the fourth opening area.

[0112] In one embodiment of the light-emitting device of the present invention, the first opening area may be equal to the third opening area, and the fifth opening area of ​​the fifth opening located closest to the substrate in the first hole may be equal to the sixth opening area of ​​the sixth opening located closest to the substrate in the third hole.

[0113] In the light emitting device according to one aspect of the present invention, the second hole may be formed in a part of the bottom surface of the first hole, and the fourth hole may be formed in a part of the bottom surface of the third hole.

[0114] In the light emitting device according to one aspect of the present invention, the bottom surface of the first hole and the bottom surface of the third hole may each be a flat surface.

[0115] In one embodiment of the light emitting device of the present invention, the first light emitting section may have a plurality of first columnar sections including a first light emitting layer, and the second light emitting section may have a plurality of second columnar sections including a second light emitting layer.

[0116] The method for producing a light emitting device according to the aspect of the present invention may have the following configuration.

[0117] A manufacturing method for a light emitting device according to one embodiment of the present invention includes the steps of forming a first light emitting section and a second light emitting section on a substrate, forming a first electrode on the first light emitting section opposite the substrate, forming a second electrode having an area smaller than the first electrode on the second light emitting section opposite the substrate, forming a first protective layer on the substrate to cover the first light emitting section and the first electrode, forming a second protective layer on the substrate to cover the second light emitting section and the second electrode, forming first holes at a first position in the first protective layer that overlaps with the first electrode and at a second position in the second protective layer that overlaps with the second electrode in a planar view seen from the normal direction of the substrate, forming a second hole having an opening area smaller than the first hole in a bottom surface of the first hole formed at the first position to form a first through hole exposing a portion of the first electrode, and forming a third hole having an opening area smaller than the second hole in a bottom surface of the first hole formed at the second position to expose a portion of the second electrode.

[0118] In one embodiment of the method for manufacturing a light emitting device of the present invention, a plurality of first columnar sections each including a first light emitting layer may be formed as the first light emitting section, and a plurality of second columnar sections each including a second light emitting layer may be formed as the second light emitting section.

[0119] A projector according to one aspect of the invention may have the following configuration.

[0120] A projector according to one aspect of the present invention includes the light emitting device according to the above aspect of the present invention. [Explanation of symbols]

[0121] 1...projector, 10...base (substrate), 12...light-emitting device, 30, 130...light-emitting section, 30B...blue light-emitting section (first light-emitting section), 30R...red light-emitting section (second light-emitting section), 31...nanocolumn (first columnar section), 33...light-emitting layer (first light-emitting layer), 41...nanocolumn (second columnar section), 43...light-emitting layer (second light-emitting layer), 51...first protective layer, 52...second protective layer, 70B...upper electrode (first electrode), 70R...upper electrode (second electrode), 151...contact hole (first through hole), 152...contact hole (second through hole), 1511...upper hole (first hole), 1512...lower hole (second hole), 1513...bottom surface (bottom surface of first hole), 1521...upper hole (first hole, third hole), 1522...lower hole (third hole, fourth hole), 1523...bottom surface (bottom surface of second hole), P1...first position, P2...second position, S1...first opening area, S2...second opening area, S3...third opening area, S4...fourth opening area, S5...fifth opening area, S6...sixth opening area.

Claims

1. A substrate; A first light emitting unit provided on the substrate; A second light emitting unit provided on the substrate; a first electrode provided on a side of the first light-emitting portion opposite to the substrate; a second electrode provided on a side of the second light-emitting portion opposite to the substrate; a first protective layer covering the first light emitting portion and the first electrode; a second protective layer covering the second light-emitting portion and the second electrode, In a plan view seen from a normal direction of the substrate, the area of ​​the first electrode is Larger than the area the first protective layer has a first through hole, the second protective layer has a second through hole, the first through hole includes a first hole and a second hole located on a side of the first hole facing the substrate, the second through hole includes a third hole and a fourth hole located on a side of the third hole facing the substrate, The first opening area of ​​the first hole located on the opposite side from the substrate is a second opening area of ​​the second hole that is located closest to the substrate; The third opening area of ​​the third hole located on the opposite side from the substrate is a fourth opening area of ​​the fourth hole that is located closest to the substrate; In the plan view, an outer edge of the second opening overlaps with the first electrode, and The outer edge overlaps the second electrode, The second opening area is greater than the fourth opening area, A first area ratio, which is a ratio of the first opening area to the third opening area, is and the fourth opening area ratio is smaller than the second area ratio. Light emitting device.

2. A substrate, A first light emitting unit provided on the substrate; A second light emitting unit provided on the substrate; a first electrode provided on a side of the first light-emitting portion opposite to the substrate; a second electrode provided on a side of the second light-emitting portion opposite to the substrate; a first protective layer covering the first light emitting portion and the first electrode; a second protective layer covering the second light-emitting portion and the second electrode, In a plan view seen from a normal direction of the substrate, the area of ​​the first electrode is Larger than the area the first protective layer has a first through hole, the second protective layer has a second through hole, the first through hole includes a first hole and a second hole located on a side of the first hole facing the substrate, the second through hole includes a third hole and a fourth hole located on a side of the third hole facing the substrate, The first opening area of ​​the first hole located on the opposite side from the substrate is a second opening area of ​​the second hole that is located closest to the substrate; The third opening area of ​​the third hole located on the opposite side from the substrate is a fourth opening area of ​​the fourth hole that is located closest to the substrate; In the plan view, an outer edge of the second opening overlaps with the first electrode, and The outer edge overlaps the second electrode, The second opening area is greater than the fourth opening area, the first opening area is equal to the third opening area, The fifth opening area of ​​the fifth opening located closest to the substrate in the first hole is smaller than the third opening area of ​​the fifth opening located closest to the substrate. is equal to the sixth opening area of ​​the sixth opening located closest to the substrate in Light emitting device.

3. The second hole is formed in a part of a bottom surface of the first hole, The fourth hole is formed in a part of the bottom surface of the third hole. The light emitting device according to claim 1 .

4. The bottom surface of the first hole and the bottom surface of the third hole are each flat. The light emitting device according to claim 3 .

5. the first light emitting section has a plurality of first columnar sections each including a first light emitting layer; The second light emitting section has a plurality of second columnar sections including a second light emitting layer. A light emitting device according to any one of claims 1 to 4.

6. The light emitting device according to any one of claims 1 to 5 is provided. projector.

Images