Carrier device and method for generating a carrier device - Patents.com
The described method addresses the limitations of existing carrier devices by creating flexible and rigid regions through partial separation of layers, enhancing versatility, compactness, and stability for microsystems applications.
Patent Information
- Application Number
- JP2021544355
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2019-01-31
- Filing Date
- 2020-01-31
- Publication Date
- 2025-01-17
- Estimated Expiration
- 2040-01-31
AI Technical Summary
Existing carrier devices for microsystems face limitations in versatility of geometrical configurations, functional characteristics, compactness, heat resistance, and chemical stability, particularly in rigid-flex composite production methods that require large bonding areas and have limited temperature stability.
A production method involving the creation of a carrier device with flexible and rigid regions by partially separating a layer from a carrier using mechanical, chemical, or electromagnetic means, allowing for flexible and stretchable layers with thin film techniques and lithographic processes, enabling compact and versatile designs.
The method enables the production of carrier devices with enhanced flexibility, heat resistance, and chemical stability, facilitating compact and versatile designs suitable for microelectronic, micromechanical, and microfluidic applications.
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Abstract
Description
[Technical Field]
[0001] CARRIER DEVICE AND METHOD FOR PRODUCING A CARRIER DEVICE FIELD OF THE INVENTION The present invention relates to a carrier device, in particular for microsystems. [Background technology]
[0002] A carrier device of the type described herein can be, for example, a microsystem or part of a microsystem, configured for, for example, microelectronic, micromechanical, microfluidic, and / or electro-optical applications. The carrier device comprises at least one carrier, for example, a substrate made of silicon or another suitable material, on which interfaces and / or lines for signal transmission between microelectronic, micromechanical, microfluidic, and / or micro-optical components can be arranged. The carrier device can, for example, mechanically connect such components to each other and / or can itself comprise such a collection or components. The carrier device typically comprises regions that differ from each other in terms of flexibility.
[0003] For example, carrier devices are known in circuit board technology, in which one or more flexible foils are placed on a relatively rigid carrier, particularly for use as connecting lines to subassemblies, sensors, or plug connectors. Typically, for this purpose, prepared, structured, and provided with conductor tracks are placed in a laminate stack on the rigid carrier and pressed together to form a rigid-flex composite, also known as a rigid-flex composite. The performance of this so-called rigid-flex technology corresponds to the technical capabilities of conventional circuit board technology and is typically limited to a conductor track width of at least 50 μm.
[0004] Furthermore, in the process of producing Si chips, it is known that a silicon carrier is first glued on the contact side to a polymer film. Then, the foil and adhesive are removed in the contact area using a laser or plasma process, the surface of the carrier is cleaned, and the entire surface is metallized, for example, by sputtering or wet chemistry. Furthermore, a line pattern is transferred to the surface using photolithography, and conductor tracks are generated using known methods. While this method allows direct bonding of Si chips, it has the disadvantages of requiring a relatively large bonding area and limited temperature stability when using adhesives. Summary of the Invention
[0005] Therefore, in principle, the objective is to facilitate the production of carrier devices, in particular carrier devices of the type described above. The method should be as versatile as possible in terms of the possible geometric configurations and in terms of the functional properties of the carrier device. Furthermore, it should be possible to produce carrier devices that are as compact as possible. For example, the highest possible heat resistance and the highest possible chemical stability of the carrier device are also desired.
[0006] To this end, the present invention proposes, inter alia, a production method according to the main claim and a carrier device according to the further independent claims, as well as a microsystem comprising such a carrier device. Further developments and special embodiments become apparent from the dependent claims and from the preceding and following description and figures. For example, the proposed carrier device and the proposed microsystem can be produced using the production method proposed herein. In particular, all features described in relation to the method can therefore also be correspondingly transferred to the carrier device and the microsystem. Conversely, all features described in relation to the carrier device or the microsystem can also be transferred to the production method.
[0007] The method proposed here for producing a carrier device may, for example, producing at least one layer on a surface of at least one carrier, the at least one layer having at least one first region and at least one second region connected to the at least one first region, the at least one first region covering the at least one first surface region of the at least one carrier, and the at least one second region covering the at least one second surface region of the at least one carrier; and completely or at least partially separating or releasing at least one second region of the at least one layer from the at least one carrier. For example, the at least one second region of the at least one layer is separated from the at least one second surface region of the at least one carrier. However, typically, the at least one first region of the layer remains on the at least one first surface region of the carrier and is typically not separated from the at least one second region of the layer.
[0008] For example, separation can be performed mechanically, e.g., by peeling the second region of the layer entirely or partially from the carrier. Additionally or alternatively, the second region of the layer can be chemically separated or released, e.g., by locally removing the carrier by etching at least those regions of the carrier that form the second surface region of the carrier. Additionally or alternatively, separation can be performed by electromagnetic radiation, e.g., by irradiating the contact region (also known as the adhesive region, adhesive interface, or bonding interface) between the second region of the layer and the second surface region of the carrier with electromagnetic radiation, e.g., laser radiation, to, for example, completely or partially destroy it. Of course, any combination of these separation methods is also possible, so that, for example, a second region of the layer is mechanically separated from the carrier, another second region of the layer is chemically separated from the carrier by etching, and yet another second region of the layer is separated from the carrier by irradiation. It is also possible for the second region of the layer to first be partially removed by electromagnetic radiation and then completely removed (e.g., peeled) mechanically.
[0009] Typically, the at least one layer is flexible, e.g., bendable and / or stretchable, at least within the at least one separated second region, such that, for example, it is possible to bend, fold, and / or stretch the at least one layer within the at least one separated second region without resulting in damage to the layer.
[0010] According to the production process, the carrier device proposed herein comprises at least one carrier (each) having a surface and at least one layer having at least a first region arranged on the surface of the at least one carrier and at least one second region connected to the at least one first region and not arranged on the surface of the at least one carrier. As already mentioned above, the layer of the at least one (separate) second region is typically flexible, i.e., for example flexible and / or stretchable.
[0011] The carrier device is preferably produced using the method proposed herein, and then at least one carrier surface has at least one first surface region as defined above in connection with the method, and at least one first region of at least one layer is disposed on the first surface region.
[0012] The proposed microsystem comprises at least one carrier device of the type proposed herein and at least one component, such as, for example, at least one microelectronic, micromechanical, microfluidic, and / or electro-optical component. For example, contact elements and / or contact wires are arranged on at least one carrier of the at least one carrier device, and these contact elements and / or contact wires are configured for signal transmission with or between the components. The at least one component can be arranged, for example, on a surface of the at least one carrier, in particular on a first surface region, a second surface region, or on an adjacent further surface region of the carrier. Furthermore, the at least one component can be arranged on at least one layer or integrated into at least one layer of the at least one carrier device, in particular on a flexible second region separated from the first region or the respective carrier. Further examples of components, wires, and contact elements are further provided below.
[0013] The term "substrate" is also used synonymously with the term "carrier." Furthermore, a carrier is also referred to as a carrier element. A part or segment of a carrier may also be referred to as a carrier. The phrase "at least one" used above typically means "one or more." For ease of reading, the expression "at least one" (particularly in relation to a carrier, a layer, a first and second region of a layer, and a first and second surface region of a carrier) is omitted below. Therefore, "a" or "an" is interpreted as "at least one," and thus "the" is interpreted as "at least one." For example, a production method can produce at least one layer on the surface of exactly one carrier (substrate). As described in more detail below, the carrier can then be divided into segments (without separating a first region of the layer from a second region of the layer) so that the carrier device thus produced includes multiple carrier segments, i.e., multiple carriers. These carrier segments are then typically interconnected by (uncut, or at least not completely cut) layers.
[0014] Typically, the surface of the carrier is flat and thus defines a major plane of the carrier. Typically, the first surface region is adjacent to the second surface region of the carrier. In the case of multiple first surface regions and / or multiple second surface regions, each second surface region is typically adjacent to at least one of the first surface regions.
[0015] The carrier device may be, for example, a rigid-flexible system, i.e., comprising a rigid region and a flexible (bendable and / or stretchable) region. For example, the carrier may be rigid (i.e., mechanically stable and not or little flexible or stretchable), and the layer may be flexible at least in the separated second region. However, as will be further explained below, it is also possible for the carrier to be semi-rigid or flexible, i.e., flexible and / or stretchable, for example, because the carrier is extremely thin. However, typically, the layer in the separated second region is more flexible than the carrier, i.e., particularly flexible and / or stretchable.
[0016] This layer can be designed, for example, in the form of a (thin) foil or a (thin) film. The layer can have, for example, a total thickness between 1 μm and 300 μm. The total thickness of the layer is preferably between 1 μm and 100 μm, particularly preferably between 1 μm and 50 μm. The layer is preferably produced or structured by thin film techniques and / or lithographic processes, such as, for example, PVD, CVD, photolithography, laser ablation or other processes, as will be explained in more detail below.
[0017] In one example, the layer is bent or folded within the separated second region (taking advantage of the flexibility or pliability of the layer in the separated second region). As a result of the bending or folding, a curvature of the layer is generated in the separated second region of the layer, for example, with a bending radius of at least 50 μm, typically between 50 μm and 40 mm. Thus, the layer can, for example, assume a non-planar shape in some areas and have a curved region. By bending or folding the layer in the separated second region, the second region of the layer can be displaced, for example, from the aforementioned main plane of the carrier. For example, the plane defined by the second region of the layer can form a non-zero angle with the plane defined by the surface of the carrier. The angle can, for example, be between 0° and 180°, e.g., between 85° and 95°. Twisting (torsion) of the separated second region of the layer is also possible.
[0018] The layer may be formed entirely or at least in part from a polymer, such as polyimide or polybenzoxazole, metal, glass, ceramic, or silicon, or a combination of two or more of these materials. To achieve the flexibility, particularly flexibility and / or stretchability, of the layer, the layer is typically formed from a suitably flexible material. However, it is also possible to form the layer from or integrate relatively rigid or fragile materials (such as metal, glass, ceramic, or silicon). In this case, however, it must typically be ensured that the layer has a sufficiently thin overall thickness, or that these relatively rigid or fragile materials form only a sufficiently thin portion of the overall thickness.
[0019] The carrier may be made entirely or at least in part from, for example, silicon, glass, metal, ceramic or polymer, or from a combination of two or more of these materials. For example, the carrier may be a wafer, in particular a silicon wafer, or part of a (silicon) wafer, a plate such as a glass plate or panel, or a band, for example made from a polymer or composite material.
[0020] The carrier is typically more rigid than the layer of the separated second region, and therefore less flexible and less flexible. Therefore, the bending radius of the carrier that can be achieved by bending the carrier typically exceeds 50 mm, or even exceeds 250 mm (depending on the rigidity of the carrier). As already mentioned above, for example, the carrier can be relatively flexible and easily bent. To achieve this, the carrier can be designed to be correspondingly thin, especially if it is made of a relatively rigid or fragile material. Thus, for example, the total thickness of the carrier can be between 10 μm and 2000 μm, between 10 μm and 800 μm, or between 10 μm and 300 μm.
[0021] The layer may be multi-layered or may comprise multiple layers or sub-layers of layers arranged one above the other, for example to form a flexible composite in a separate second region, at least one or more of the sub-layers preferably being produced by thin film technology and / or lithographic processes.
[0022] The layers or sub-layers of layers can be, for example, insulating layers and / or conductive layers, e.g., electrical, optical, and / or microfluidic insulating layers and / or electrical, optical, and / or microfluidic conductive layers. The insulating layers and conductive layers can be, for example, layered one on top of the other. For example, a line layer can have at least one line, e.g., at least one conductor track made of a conductive material, at least one optical line, and / or at least one microfluidic channel.
[0023] In one example, when forming a layer on the surface of a carrier, at least one (electrical) insulating layer of the layer is formed from an (electrical) insulating material (dielectric), for example, one of the additional polymers described below, in particular polyimide (PI) and polybenzoxazole (PBO). The at least one insulating layer can, for example, cover at least a first surface region and a second surface region of the carrier. For example, a conductive layer is formed on at least one insulating layer made of a conductive material. For example, metals such as copper (Cu), aluminum (Al), titanium (Ti), and gold (Au) are used as conductive materials. For example, at least one line layer has at least one continuous line or conductor track starting from a first region of the layer and extending to a second region of the layer. Thus, this layer can be, for example, a (multilayer) redistribution layer or a redistribution film.
[0024] For example, the second region separated from the carrier or the second surface region of the carrier can be or be connected to a further carrier of the carrier device. This further carrier can, for example, be designed like the first-mentioned carrier, i.e., for example, to be highly rigid. The embodiments described for the first-mentioned carrier also apply to the further carrier described here. The further carrier can typically be designed flat, for example, and also have a surface to which the separated second region of the layer can be flat and / or connected by mechanical connection elements or the already mentioned contact elements. This connection can, for example, be made by a press fit or by a material bond, for example, by a solder connection. The mechanical connection elements can, for example, be so-called microcontact elements or microsolder bumps, bonding wires or plug connection elements.
[0025] Before or after the second region of the layer is separated from the second surface region of the carrier, the carrier can be cut along the cutting plane, for example, at the second surface region or between the first and second surface regions. However, typically, the layer is not cut in this case. In particular, by cutting the carrier, the first and second regions of the layer are typically not separated from each other but remain connected to each other.
[0026] For example, it is possible to cut the carrier twice or multiple times at the second surface region or between at least one first surface region and at least one second surface region of the carrier. In this way, the carrier can be divided into two, three, or more parts or segments. For example, it is possible to provide exactly one first surface region and exactly one second surface region of the carrier. In this case, the carrier is typically broken down into exactly two parts or segments, and then the layer that typically forms the second surface region (or part of the second surface region) is separated from that segment. However, it is also possible, for example, to provide two first surface regions and a second surface region located between them. In this case, the carrier is cut by the described cut, for example, within the second surface region or between the second surface region and the two first surface regions, respectively, so that the carrier is divided into three segments, for example, a middle segment and two outer segments. For example, the two first surface regions are each formed by one of the two outer segments, and the second surface region is formed by the middle segment. The layer (i.e., its second region) is then completely separated, for example, from the middle segment (and possibly partially from the two outer segments). The middle segment is then typically removed from the carrier device. The layer (i.e., the first two regions) remains on the first two surface regions of the two outer segments of the carrier. The separated second region then forms a flexible connection between the remaining two outer segments of the carrier.
[0027] The carrier may be cut, for example, along two or more cutting planes. The cutting planes may each be perpendicular to the aforementioned major plane of the carrier, or they may subtend an angle other than 90°. The angle may be, for example, between 45° and 135°, e.g., about 90°.
[0028] For example, the second region of the layer may be the first region of the carrier. 2 The region of the carrier that forms the surface region (e.g., the above-mentioned middle segment of the carrier) is removed by etching, so that it can be separated from the second surface region of the carrier. Corresponding embodiments of the etching process are described in detail below.
[0029] For example, before the second region of the layer is separated from the second surface region of the carrier, the adhesion of the second region of the layer to the second surface region can be completely or partially destroyed, or at least reduced. In this way, complete separation of the second region of the layer from the carrier can be achieved, or subsequent mechanical separation (e.g., by peeling) can be facilitated. For example, the second surface region of the carrier can be irradiated with electromagnetic radiation. For example, irradiation can be carried out through the carrier. For this purpose, the carrier can be made, for example, of a material that is transparent to selected radiation (wavelengths). Additionally or alternatively, the second region of the layer that is adhered to the second surface region can also be irradiated with electromagnetic radiation.
[0030] To facilitate separation, it is additionally or alternatively possible to form, for example, an adhesion-reducing intermediate layer on the second surface region of the carrier before forming the layer on the surface of the carrier. In this case, at least the first surface region of the carrier is preferably excluded. Alternatively, the adhesion-reducing intermediate layer can be removed again from the first surface region of the carrier before the layer is formed on the surface of the carrier.
[0031] Alternatively or additionally, it is also possible to apply an adhesion-reducing intermediate layer onto the partial layer of the layer, and then to produce one or more further partial layers of the aforementioned layer on top of this adhesion-reducing intermediate layer, which can be further separated (e.g., peeled off) from the intermediate layer (thus integrated or embedded in the layer) and thus from the carrier, without separating this separated (second) region of the layer from the remainder of the layer (first region of the layer).
[0032] Additionally or alternatively, an adhesion-enhancing intermediate layer can be applied to a first surface region of the carrier before the layer is formed on the surface of the carrier. When the adhesion-enhancing intermediate layer is applied, the second surface region can be omitted. Alternatively, the adhesion-enhancing intermediate layer can be removed again from the second surface region of the carrier before the layer is formed on the surface of the carrier.
[0033] The adhesion-reducing or adhesion-enhancing interlayer can be produced and / or structured, for example, using thin film technology and / or lithographic processes, as described in more detail below. Typically, each adhesion-enhancing or adhesion-reducing interlayer is a monolayer, i.e., a layer made up of only one layer of atoms or molecules of the adhesion-enhancing or adhesion-reducing interlayer material.
[0034] For example, at least one contact element, e.g., an electrical, optical, and / or microfluidic contact element, can be or can be disposed on the carrier, e.g., in a first surface region, e.g., on the surface of the carrier. For example, starting from the first surface region of the carrier, the contact element can partially or completely pass through the carrier in its thickness and / or the first region of the layer in its thickness. For example, at least one (electrical, optical, and / or microfluidic) connection is established between at least one (electrical, optical, and / or microfluidic) contact element and an (electrical, optical, and / or microfluidic) line (e.g., one of the lines mentioned above) of the layer. It is also possible for the contact element to be electrically, optically, and / or microfluidically connected to electrical, optical, and / or microfluidic lines disposed on the carrier and / or to electrical, optical, and / or microfluidic components disposed on the carrier.
[0035] Possible examples of components include integrated circuits, microchips such as CMOS chips, CPUs or data storage devices, energy storage devices, MEMS, MOEMS, resistors, antennas, coils, capacitors, sensors, and actuators. For example, vias, plated through holes such as TSVs, contact strips, solder contacts, external contacts for plug connections, plug strips, wire bond pads, and contact pads for e.g., thermocompression connections can be considered contact elements.
[0036] As already mentioned above, for example, all features and embodiments specified for the carrier also apply accordingly in the case of further carriers of the carrier device. For example, it is possible to arrange at least one (further) electrical, optical, and / or microfluidic contact element on the surface of the further carrier. For example, at least one electrical, optical, and / or microfluidic connection can be established between the (further) at least one electrical, optical, and / or microfluidic contact element and the lines of the layer. Furthermore, the contact element can be, for example, conductively connected to electrical, optical, and / or microfluidic lines arranged on the further carrier and / or to electrical, optical, and / or microfluidic components arranged on the further carrier.
[0037] For example, the layer itself may also comprise or include at least one (electrical, optical, and / or microfluidic) component and / or one (electrical, optical, and / or microfluidic) contact element. For example, at least one component and / or contact element may be disposed on or integrated into the layer, e.g., in a first region of the layer or in a second region of the layer. However, both regions of the layer may also be equipped with components. For example, the examples of components and contact elements described above or below may be considered components and contact elements.
[0038] If they are present, at least one component and / or at least one contact element is connected to at least one of the above-mentioned lines on or in the layer.
[0039] Preferably, the carrier device proposed herein, or a carrier device produced using the method proposed herein, does not include a layer formed from an adhesive between the surface of the carrier and the first region of the layer. Preferably, the carrier device between the surface of the carrier and the first region of the layer does not include at least a layer formed from an adhesive that is thicker than a monolayer of adhesive material. (A monolayer is a layer consisting of only one layer of atoms or molecules of the respective material of the layer.) By omitting the adhesive layer, it is often possible to improve the heat resistance and chemical stability of the carrier device.
[0040] For example, the second region of the layer can protrude laterally beyond the (lateral) edge of the carrier, here, for example, protrude laterally from the carrier. This part protruding laterally beyond the carrier can, for example, be freestanding or connected to a further carrier (for example, as described above). For example, a so-called fan-out structure can be realized with this method. It is also possible that the second region of the layer does not protrude laterally beyond the (lateral) edge of the carrier, but is arranged on the surface of the carrier, thereby forming, for example, a so-called fan-in structure. [Brief explanation of the drawings]
[0041] The invention will be explained in more detail below with reference to particular embodiments which are illustrated schematically in the following figures:
[0042] [Figure 1A] 1 is a top view of a carrier for a carrier device of the type proposed herein;
[0043] [Figure 1B] FIG. 1B is a side view of the carrier shown in FIG. 1A.
[0044] [Figure 2A] 1B is a top view of the carrier and partial layers of the layers shown in FIG. 1A.
[0045] [Figure 2B]2B is a side view of the carrier and applied partial layer shown in FIG. 2A.
[0046] [Figure 3A] 2B is a top view of a further partial layer of the carrier and layers shown in FIG. 2A.
[0047] [Figure 3B] 3B is a side view of the carrier and further partial layers shown in FIG. 3A;
[0048] [Figure 4A] 3B is a top view of a carrier device of the type proposed herein and the carrier shown in FIG. 3A after areas of the carrier have been removed and components have been placed on areas of the layer separated from the carrier.
[0049] [Figure 4B] FIG. 4B is a side view of the carrier device shown in FIG. 4A.
[0050] [Figure 5A] 10 is a top view of a further embodiment of a carrier device of the type proposed herein; FIG.
[0051] [Figure 5B] FIG. 5B is a side view of the embodiment shown in FIG. 5A.
[0052] [Figure 6A] 10 is a top view of a further embodiment of a carrier device of the type proposed herein; FIG.
[0053] [Figure 6B] FIG. 6B is a side view of the embodiment shown in FIG. 6A.
[0054] [Figure 7A] 1 is a top view of an example carrier of a carrier device of the type proposed herein;
[0055] [Figure 7B]7B is a top view showing a cross section of the carrier and applied layers shown in FIG. 7A.
[0056] [Figure 7C] FIG. 7C is a side view of a carrier device of the type proposed herein, produced from the carrier shown in FIG. 7B.
[0057] [Figure 7D] FIG. 7D is a diagram showing a modification of the embodiment shown in FIG. 7C.
[0058] [Figure 8] 1 is a side view of an embodiment of a carrier device of the type proposed herein;
[0059] [Figure 9] 1 is a top view of an example carrier of a carrier device of the type proposed herein;
[0060] [Figure 10A] 1 is a top view of an embodiment of a carrier device of the type proposed herein;
[0061] [Figure 10B] FIG. 10B is an enlarged cross-sectional view of the view shown in FIG. 10A. DETAILED DESCRIPTION OF THE INVENTION
[0062] In the figures and the following description, corresponding features are designated by the same reference signs or by reference signs that differ from each other by an integer multiple of 100 (see explanation of reference signs at the end of the description).
[0063] The individual steps of the embodiments of the production method proposed herein are shown in Figures 1A, 1B, 2A, 2B, 3A, 3B, 4A and 4B, in which embodiments of carrier device 100 are produced as proposed herein.
[0064] 1A and 1B show a carrier 110 having a flat surface 120. The carrier 110 is made, for example, of silicon, but can also be made entirely or at least partially of another material, such as glass, metal, ceramic, or polymer, or a combination of two or more of these materials. For example, the carrier 110 is a wafer or part of a wafer. However, the carrier can also be a plate or band, such as a glass panel. The carrier 110 can be, for example, circular or rectangular, or have any other shape.
[0065] The carrier 110 is relatively rigid and therefore flexible only within a relatively small range. For example, the total thickness ranges between 300 μm and 2000 μm. For example, the total thickness of the carrier is approximately 800 μm. The bending radius that can be achieved by bending the carrier 110 is, for example, greater than 250 mm.
[0066] However, in principle, it is also possible to design the carrier 110 to be flexible and easy to bend, and to achieve this, the carrier 110 can be designed to be correspondingly thin, for example having a total thickness in the range between 10 μm and 300 μm, for example less than 200 μm.
[0067] 1A and 1B further show a first surface region 121 of the carrier 110 and two second surface regions 122 of the carrier 110, each adjacent to the first surface region 121.
[0068] Various means are possible to facilitate the separation of the layer 130 not yet applied to the carrier 120, which separation is carried out further at a later time (see Figures 2A, 2B, 3A and 3B and the associated description below).
[0069] For example, an adhesion-reducing intermediate layer (not shown) can be applied to the second surface region 122 on the surface 120 of the carrier 110 before the layer is produced. In this case, the remaining surface 120, in particular the first surface region 121 of the carrier, is preferably excluded. Alternatively, the adhesion-reducing intermediate layer can be removed again from at least the first surface region 121 of the carrier 120 before the layer is produced on the surface 120 of the carrier 110.
[0070] Additionally or alternatively, an adhesion-enhancing intermediate layer (not shown here) can be applied to the first surface region 121 of the carrier 110 before the layer 130 is produced on the surface 120 of the carrier 110. If an adhesion-enhancing intermediate layer is applied, the second surface region 122 can be correspondingly omitted. Alternatively, the adhesion-enhancing intermediate layer can be removed again from the second surface region 122 of the carrier 110 before the layer is produced on the surface of the carrier.
[0071] The respective adhesion-enhancing or adhesion-reducing intermediate layer can be applied to the surface 120 of the carrier 110 and structured, for example, by thin-film technology and / or lithographic methods. For example, the intermediate layer can be removed from the first surface region 121 or (if required) again from the second surface region by (O2) plasma etching.
[0072] Typically, each adhesion enhancing or reducing interlayer is a monolayer, ie, a layer made up of only one layer of atoms or molecules of the adhesion enhancing or reducing interlayer material.
[0073] The material of the adhesion-reducing interlayer is typically selected so that the as-yet-unapplied layer 130 adheres to the adhesion-reducing interlayer (at the second surface region 122 of the carrier 110) with less adhesion than to the material of the carrier 110. Accordingly, the material of the adhesion-enhancing interlayer is typically selected so that the as-yet-unapplied layer 130 adheres to the adhesion-enhancing interlayer (at the first surface region 121 of the carrier 110) with greater adhesion than to the material of the carrier 110. Depending on the material of the carrier 110 and the material of the layer 130, for example, the adhesion-reducing or adhesion-enhancing interlayer can affect how hydrophilic or hydrophobic the first and second surface regions of the carrier become.
[0074] In this embodiment, the as-yet-unapplied layer 130 can be formed, for example, entirely or in at least some areas from a polymer, such as in areas directly adjacent to the material of the carrier 110 or to an adhesion-enhancing or adhesion-reducing intermediate layer. For example, the polymer can include polyimide (PI) or polybenzoxazole (PBO), or a combination thereof.
[0075] The functional groups of the polymer can be integrated into the polymer of layer 130, for example, as adhesion promoters, for example so-called "built-in adhesion promoters". These can have the property of covalently bonding with the carrier material (here, for example, silicon or glass). For example, in order to reduce adhesion, the surface 120 of carrier 110 can be modified, for example, so that the covalent bonding is inhibited or not stabilized, for example, by an intermediate layer as mentioned above that reduces adhesion.
[0076] Examples of suitable polymers (or polymer systems) with integrated adhesion promoters for layer 130, particularly its sublayers 133 and 134, are, for example, polyimides (PI) and polybenzoxazoles (PBO), or combinations thereof. Polyimides include commercially available products such as the LTC9300 series and DUR7300 series from Fujifilm, the HD4100 series from HD Microsystems, and the Pimel BL-300 series and BM-300 series from Asahi Kasei. Polybenzoxazoles (PBO) include commercially available products such as the HD-8820 series and HD89xx series from HD Microsystems.
[0077] The adhesion-reducing intermediate layer may include, for example, an organosilane compound (e.g., hexamethyldisilazane (HMDS), diphenylsilanediol), which can form Si-O compounds with, for example, the native oxide of the carrier. For example, a hydrophobic surface having -CH3 or -CH5 monolayer groups is formed on the surface 120 of the carrier 110.
[0078] Alternatively, the aforementioned polymers of layer 130 may only adhere relatively weakly to the respective carrier material (e.g., silicon or glass) because, for example, they do not contain an integrated adhesion promoter. In this case, a corresponding "adhesion promoter" can be applied to the surface of the carrier as an adhesion-enhancing interlayer. For example, organosilane compounds are an example of a material suitable for an adhesion-enhancing interlayer. These are particularly suitable for enhancing the adhesion of polymers, such as polyimides, to carrier materials (e.g., silicon or glass). Examples of such polymers include HD Microsystems' PI-2600, PI-2525, and PI-2555 series polyimides. For example, organosilane compounds such as HD Microsystems' VM-651 and VM-652 products can be considered as adhesion-enhancing interlayer materials.
[0079] The adhesion-enhancing intermediate layer can comprise, for example, an organosilane compound, which forms, for example, a Si-O compound with the (native) oxide of the carrier, such as, for example, aminopropyltriethoxysilane. The amino group can serve, for example, as a functional group for the polyimide polymer of layer 130. Si-OCH3, for example, forms a Si-O compound with the native oxide of carrier 130.
[0080] In contrast to conventional adhesives, the adhesion-enhancing intermediate layer preferably forms covalent bonds with the respective polymers of the layers. As already mentioned above, the adhesion-enhancing intermediate layer is preferably present in the form of a monolayer and is therefore significantly thinner than conventional adhesive layers.
[0081] Preferably, no further layer is disposed between layer 130 and first surface region 121 of carrier 110, at least no further layer having a layer thickness greater than a single layer of the material forming this layer. Preferably, no layer of adhesive thicker than a corresponding single layer of adhesive is disposed between layer 130 and first surface region 121 of carrier 110.
[0082] As an alternative to the above-described adhesion-reducing intermediate layer, it is also possible to reduce adhesion of the second region 132 of the layer 130 to the second surface region 122 by irradiating the second surface region 122 of the carrier and / or the second region 132 of the layer 130, which is adhered to the second surface region 122 via the carrier 110, with electromagnetic radiation. For example, the electromagnetic radiation can be, for example, laser radiation, such as laser radiation from a UV light excimer laser with λ=248 nm or 308 nm, or laser radiation from a Mid-IR laser. Typically, the adhesive interface between the polymer and the substrate is completely or at least partially destroyed by absorption of the electromagnetic radiation and photochemical decomposition. For example, atomic and / or molecular bonds at the transition between the carrier and the layer 130 can be destroyed, for example, by laser ablation. Furthermore, irradiation between the carrier and the layer can result in gaseous (by)products that open the bonding interface between the carrier 110 and the layer 130, for example. An optional auxiliary layer can be applied between layer 130 and carrier 110, which can include, for example, a chromophore, to act as a radiation absorbing layer, such as Brewer Bond 701, a product of Brewer Science.
[0083] As shown in the following Figures 2A, 2B, 3A and 3B, the aforementioned layer 130 is generated on the surface 120 of the carrier 110, more precisely on a first surface region 121 and two second surface regions 122. The layer 130 includes a first region 131 that covers the first surface region 121. In the example shown, the layer 130 also includes two second regions 132, each of which is connected to the first region 131 of the layer 130. Each of the two second regions 132 covers exactly one of the two second surface regions 122 of the carrier 110. In this example, the layer 130 is multi-layered and includes a first partial layer 133 and a second partial layer 134 that are arranged one above the other within the first surface region 121 of the carrier 110.
[0084] The carrier 110 shown in Figures 1A and 1B is shown in a top view and a side view in Figures 2A and 2B, respectively, after a first partial layer 133 has been produced on a first surface region 121 of the carrier 110 and on one of two second surface regions 122 of the carrier 110. The other of the two second surface regions 122 is here excluded.
[0085] 2A and 2B are shown in top and side views, respectively, in Figures 3A and 3B after a second partial layer 134 has been applied to the first surface region 121 of the carrier 110 (which is on top of the first partial layer 134) and to one of the two second surface regions 122 of the carrier 110 on which the first partial layer 133 has not been applied. The one of the two second surface regions 122 on which the first partial layer 133 has been applied is omitted here.
[0086] Thus, the layer 130 can be produced in the first surface region, for example, directly on the material of the carrier 110, and in the second surface region 122, on an intermediate layer material that reduces adhesion. Alternatively, the layer 130 can be produced in the first surface region, for example, on an intermediate layer material that enhances adhesion, and in the two second surface regions 122, directly on the material of the carrier 110.
[0087] Layer 130 may be formed entirely or at least in some areas from a polymer, such as polyimide or polybenzoxazole, a metal, glass, ceramic, or silicon, or a combination of two or more of these materials. To achieve the flexibility or pliability of the layer, the layer may be provided with a sufficiently thin overall thickness. In this manner, a flexible layer may also be formed using a relatively rigid or fragile material.
[0088] Layer 130 may also include further layers in addition to the shown partial layers 133, 134. Partial layers 133, 134 or further partial layers may differ from one another in terms of their material and function. Partial layers 133, 134 may be, for example, electrically insulating layers formed from electrically insulating materials such as the aforementioned polymers, or further intermediate layers that reduce adhesion, for example, to allow partial separation of partial layers 133, 134 from one another.
[0089] For example, a conductive layer containing a conductive material can be formed on or between insulating layers. For example, metals such as copper (Cu), aluminum (Al), titanium (Ti), and gold (Au) are used as conductive materials. These conductive layers can also be produced and structured using thin film techniques and lithographic processes, as described in more detail below.
[0090] For example, the line layer includes at least one line (not shown here), e.g., a conductor track that starts in a first region 131 of the layer 130 and extends to one of two second regions 132 of the layer 130. Examples of conductive layers with conductor tracks are shown in Figures 9, 10A and 10B.
[0091] The insulating layers each have a thickness ranging, for example, between 1 μm and 300 μm, for example 10 μm. The conductive layers each have a thickness ranging, for example, between 0.25 μm and 100 μm, for example 5 μm. The width of the conductor tracks and the distance between the conductor tracks can, for example, be 0.5 μm or more, for example 1 μm to 30 μm or up to 250 μm.
[0092] Alternatively or additionally, further sub-layers of layer 130, such as the aforementioned electrical, optical and / or microfluidic insulating layers, electrical, optical and / or microfluidic conductive layers, and possibly adhesion-reducing intermediate layers, may be considered to enable or facilitate separation of the sub-layer regions of the layer disposed thereon.
[0093] Layer 130, i.e., in particular sublayers 131 and 132, and possibly further sublayers such as insulating, conductive, and adhesion-reducing layers, can be produced using known thin-film techniques, such as PVD, CVD, photolithography, and laser ablation. For example, line layers can be produced by depositing the line layers by PVD or CVD, followed by lithographic masking and galvanic deposition or direct etching (subtractive structuring). Chemical direct metallization processes are also possible for applying conductive layers. PVD followed by galvanic reinforcement is preferred. Insulating layers, such as polymer layers, can be applied, for example, by spin coating and then structured, preferably by photolithography or laser ablation. For example, heat treatment or polymerization of the polymer layer can be performed.
[0094] The structure of layer 130 described above is only one possible embodiment among others. In alternative embodiments, layer 130 can also be a metal foil or a functional polymer foil, for example for optical applications or filters.
[0095] As shown in FIG. 4A , and particularly as clearly shown in FIG. 4B , the two second regions 132 of the layer 130 are separated from the two second surface regions 122 of the carrier 110. Those regions of the carrier 110 that previously formed the two second surface regions 122 (as well as all further regions of the carrier 110 that did not form the first or second surface regions 121 or 122 of the carrier 110 in this example) have been removed. Thus, the two separated second regions 132 of the layer 130 protrude laterally beyond the current edges of the carrier 110. For example, they are bent downward (i.e., toward the carrier 110), but they could just as easily be bent upward from the carrier. Thus, each of the two second regions 132 has a curved region 135 and a flat region 136. The bending radius of the curved region 135 corresponds, for example, to five times the total thickness of each second region 132 of the layer 130, but can also be, for example, substantially smaller, and depending on the flexibility, can also correspond, for example, to less than the total thickness of the second region 132 of the layer 130.
[0096] Thus, in particular, the second regions 132 are bent out of the plane defined by the first surface region 121 of the carrier 110 such that the respective flat regions 136 (or the planes defined by them) each enclose the aforementioned angle with the plane formed by the first surface region 121 of the carrier. Due to the flexibility of the layers in the separated second regions 132, the angle can be selected substantially as desired. For example, the angle may be in the range between 45° and 135°, e.g., about 90°. In principle, bending around any axis is possible, i.e., in particular, twisting (torsion) of the separated second regions 131 is also possible.
[0097] For example, the two second regions 132 of the layer 130 can be separated from the carrier 110, for example, by etching away those regions of the carrier 110 that form the second surface region 122 of the carrier 110 (as well as all further regions of the carrier 110 that do not form the first or second surface regions 121 or 122 of the carrier 110 in this example). For this purpose, for example, a correspondingly structured etching mask can be generated on the back side (facing away from the layer 130) of the carrier 110, for example, by known lithography processes. Etching can be performed, for example, by known DRIE processes or wet-chemically. Silicon, for example, can be considered a particularly suitable material for the carrier 110 for the etching process. For example, the carrier 110 can be fixed to a temporary carrier for carrying out the etching process, for example, on a dicing tape, a film frame, or a substitute substrate.
[0098] However, it is also possible that the two second regions 132 of the layer 130 are mechanically separated from the two second surface regions 121, for example by peeling them off, particularly if an intermediate layer that reduces adhesion is disposed on each of the two second surface regions 121, as described above.
[0099] Finally, the two second regions 132 of the layer 130 can be separated from the two second surface regions 121 of the carrier 110 by electromagnetic radiation, for example by a UV light excimer laser, for example with a wavelength of 248 nm or 308 nm, or by laser radiation of a MidIR laser as described above. The material of the carrier 110 is preferably transparent to electromagnetic radiation so that irradiation can occur through the material of the carrier, for example starting from the underside of the carrier facing away from the layer 130. For example, the carrier 110 can be made of radiation-transparent glass.
[0100] For example, after mechanical and / or laser separation of the two second regions 132 of the layer 130, those regions of the carrier 110 that do not form the first surface region 121 can also be removed. This can be done, for example, by separating these regions of the carrier 110 before or after the step of separating the first region 131 of the layer 130 from the rest of the carrier 110, for example by means of a saw or a laser. For example, the carrier 110 can be cut along a cutting plane that in each case passes, for example, between the first surface region 121 and one of the two second surface regions 122. However, when the carrier 110 is cut, the layer 130 is not cut.
[0101] Furthermore, at least one contact element (not shown here), mechanical connection element (not shown here), and / or component 150 is disposed in each of the two second regions 132 of layer 130. The contact element and / or component is, for example, connected to at least one conductor of the conductive layer of layer 130. Further components and contact elements (not shown) can, for example, be disposed on layer 130 or integrated into layer 130, for example, in separate second region 132 or in the first region of layer 130.
[0102] Examples of the components 150 mentioned include CMOS chips, memories, CPUs, MEMS, MOEMS, resistors, antennas, coils, capacitors, and other passive elements, as well as sensors and actuators. Further examples of components are described above. Contact elements and mechanical connection elements can be, for example, contact strips, plug connection elements, plug strips, external contacts for plug connections, solder contacts, wire bond pads, e.g., contact pads for thermocompression connections, microcontact elements, or microsolder bumps or bonding wires.
[0103] 5A and 5B show a further embodiment of the carrier device 500 proposed herein, which can be produced, for example, using the same production method as the carrier device 100 shown in FIGS. 4A and 4B, and which differs, for example, only in its geometric configuration. (Accordingly, the reference numerals of the corresponding features are increased by 400 compared to the embodiment shown in FIGS. 4A and 4B.) Therefore, the following will mainly describe the differences from the carrier device shown in FIGS. 4A and 4B.
[0104] Thus, the carrier device 500 comprises a carrier 510, the structure of which may correspond, for example, to the carrier 110 shown in FIGS. 4A and 4B , but on its surface 520, instead of a continuous layer 130 as shown in FIGS. 4A and 4B , for example, two layers 530 are arranged, which are spatially separated from each other. The layers 530 may correspond, for example, in their construction and structure, to the layers 130 of the carrier device 100 shown in FIGS. 4A and 4B . Thus, each of the layers 530 has a first region 531, which is arranged on one of the two first surface regions 521 of the carrier 510, which are spatially separated from each other. Each of the layers 530 also has a flexible second region 532 connected to the first region 531 of the respective layer 530, which is not arranged on the surface 520 of the carrier 510, but which, for example, protrudes laterally beyond the edge of the carrier 510 and is bent downward toward the carrier 510.
[0105] In addition to the components 550 on the two second regions 532 of the layer 530, possible further components 550 of the carrier device 500 are also shown in Figure 5A, which are arranged on the surface 520 of the carrier 510 and are connected via conductor tracks 570 to conductor tracks (not shown) integrated in the layer 530 and to the components 550 arranged on the second regions 531 of the layer 530. For example, for the components 550 shown in Figures 5A and 5B, the same examples can be considered as defined above for the components 150 shown in Figures 4A and 4B.
[0106] The embodiment of carrier device 600 shown in FIGS. 6A and 6B differs substantially from carrier device 500 shown in FIGS. 5A and 5B only with respect to its geometric configuration. (Accordingly, the reference numerals of corresponding features are incremented by 100 compared to the embodiment shown in FIGS. 5A and 5B.) Like embodiment 500 shown in FIGS. 5A and 5B, carrier device 600 comprises two layers 630 arranged on carrier 610, each having a first region 631, which in each case is arranged on one of two first surface regions 621 of carrier 610 that are spatially separated from one another. Each of layers 630 also has a flexible second region 632 connected to the first region 631 of the respective layer 630 and not arranged on surface 620 of carrier 610. In one case, one of the two second regions 632 protrudes laterally beyond the edge of carrier 610 and is bent upward from carrier 610. The other of the two second regions 632 does not protrude laterally beyond the edge of the carrier 610 , but is disposed above the surface 620 of the carrier 610 and is bent upward from the surface 620 of the carrier 610 .
[0107] Thus, the two flexible separation regions 532 of layer 530 protrude laterally beyond the edge of carrier 510 and are therefore not located on its base region, forming a so-called fan-out structure in the example shown in Figures 5A and 5B. In contrast, in the example shown in Figures 6A and 6B, only one of the two separation regions 632 forms such a fan-out structure. The other separation region 632, which does not protrude laterally beyond the edge of carrier 610 and is located on surface 610, forms a so-called fan-in structure.
[0108] The production and construction of a further embodiment of a carrier device 700 of the type proposed herein will be described with reference to Figures 7A, 7B and 7C. Carrier device 700 differs substantially from carrier device 100 shown in Figures 4A and 4B, for example in its geometric configuration. Corresponding features of carrier device 700 are therefore given a reference number increased by 600 compared to carrier device 100 shown in Figures 4A and 4B.
[0109] FIG. 7A shows a carrier 710 of a carrier device 700, which may correspond, for example, to the carrier 110 shown in FIGS. 4A and 4B. The flat surface 720 of the carrier 710 has two first surface regions 721 spatially separated from one another and two second surface regions 722 positioned therebetween, each adjacent to one of the first surface regions 721. As shown in FIG. 7B, a continuous layer 730 is formed on these surface regions 721, 722. This layer 730 may correspond, for example, to layer 130 described above in terms of its formation, composition, and structure. The layer 730 includes two first regions 731, each covering one of the two first surface regions 721, and a second region 732 connected to the two first regions 731 and covering the second surface region 722.
[0110] Additionally, two cutting planes are indicated by dashed lines in Figure 7B. Carrier 710 is cut along these cutting planes with a saw or laser, but without cutting through layer 730. As a result, carrier 710 is divided into two lateral first carrier segments 711, each forming one of two first surface regions 721, and an intermediate second carrier segment 712, forming second surface region 722.
[0111] In a next step, the second region 732 of the layer 730 is separated from the second surface region 722 and thus from the intermediate second carrier segment 712. The separation can be performed mechanically, for example by peeling the second region 732 from the second surface region 722, as described above, and / or by laser irradiation. For this purpose, for example, as also described above, it is possible to apply an intermediate layer that strengthens the adhesion to the two first surface regions 721 or to apply an intermediate layer that reduces the adhesion to the second surface region 722 in order to facilitate the mechanical separation, and / or to apply an absorber layer to the second surface region 722, which improves the absorption of laser radiation.
[0112] Alternatively, as mentioned above, the separation can also be carried out chemically, for example by etching using an etching mask, for example by removing the intermediate second carrier segment 712. In this case, it is in principle also possible to omit cutting the carrier with a saw or laser.
[0113] 7C, the separated second region 732 of the layer 730 is bent approximately 90° so that the two remaining first carrier segments 711 are approximately perpendicular to one another. Of course, other angles and folding of the separated second region 732 are possible as well, such that the two carrier segments are aligned parallel to one another, e.g., the two first surface regions 721 either facing one another or facing away from one another. Furthermore, twisting of the separated second region 732 can also be implemented.
[0114] As also shown in FIG. 7C, contact elements 760 are disposed on the two first regions 731 of layer 730, these contact elements enabling electrical contact of electrical conductors integrated in layer 730.
[0115] 7D shows a variant of the carrier device 700 shown in Fig. 7C, in which one of the two carrier segments 711 has plated-through holes 761, which allow electrical contact of the conductors integrated in layer 730 on both sides, i.e., in particular from the top side of the carrier segment 711, on which layer 730 is located, and from the opposite rear side of the carrier segment 711. In the example shown, a further carrier (substrate) 715 of the carrier device 700 is fixed to the rear side of the carrier segment 711 and is electrically connected to the wires integrated in layer 130 via plated-through holes 761.
[0116] 7C and 7D, the two carrier segments 711 are connected only by the flexible second region 732 of the layer 730. As a result, the mechanical and thermal coupling between the two carrier segments 711 is reduced, which can reduce, in particular, thermomechanical stresses.
[0117] FIG. 8 shows a further embodiment of a carrier device 800 of the type proposed herein, which can be produced using the method described above. Thus, the carrier device 800 comprises a carrier 810, which can be made of, for example, glass or silicon, on whose surface 820 a first region 831 of a layer 830 is disposed. The layer 830 also has a second region 832 connected to the first region 831, which is not disposed on the surface 820, protrudes laterally beyond the edge of the carrier 810, and is bent toward the carrier. For example, the layer 830 can be produced by the production method described in connection with the embodiment 100 shown in FIGS. 4A and 4B and have corresponding features. Similar to the embodiment 700 shown in FIG. 7D, the carrier 800 also has contact elements 860 and plated-through holes 861, through which electrical connections can be established to one or more conductors integrated in the layer 830. A further carrier 815 (substrate) of carrier device 800 is mechanically connected to carrier 810 via plated through-holes 761 on the top side of carrier 810 and also electrically connected to the aforementioned conductors of layer 830. On the back side of carrier 810, opposite to the aforementioned top side, in addition to plated through-holes 861, further connection elements 880 are arranged, which connection elements allow the mechanical and / or electrical connection of further carriers (not shown here) to carrier 810, preferably by means of solder connections. Mechanical connection elements 880 are formed, for example, by so-called microcontact elements or so-called microsolder bumps, bonding wires or plug connection elements.
[0118] 8 can be used, for example, as a so-called interposer and is fixed to a further carrier (not shown here), for example using mechanical connection elements 880 and plated through holes 861. The components 850 on the isolated second regions 832 of the layer 830 can be, for example, connector strips with electrical and / or optical contacts or can be designed as any other interface. The isolated second regions 832 form a so-called fan-out structure.
[0119] FIG. 9 shows an intermediate stage in the production of a further embodiment of an unfinished carrier device 900 of the type proposed herein. A carrier 910, which can be made of, for example, glass or silicon, is shown, having a surface 920, for example, with two first surface regions 921 and three second surface regions 922 (each surrounded by a dashed line). For example, an adhesion-reducing intermediate layer is produced on each of the three second surface regions 922, as already described above, for example, in connection with the embodiment shown in FIGS. 4A and 4B. A continuous layer 930 is then produced on the surface 920. The layer 930 has two first regions 931, each covering one of the two first surface regions 921, and three second regions 932, connected to the two first regions 931 and each covering one of the three second surface regions 922. For example, the layer 930 can be produced by the production method described in connection with the embodiment 100 shown in FIGS. 4A and 4B and can have corresponding features. In particular, shown here are, for example, electrical wires 970 embedded in layer 930 and passing through and connecting first and second regions 931, 932 of the layer. Similar to the embodiments 700, 800 shown in Figures 7D and 8, the carrier 910 also has contact elements 960 and plated-through holes 961, each of which can establish an electrical connection to one or more electrical wires 970 integrated in layer 830.
[0120] In a subsequent method step (not shown here), the three second regions 932 of the layer 930 can be separated from the second surface regions 922, for example, by mechanical separation, using, for example, one of the methods described above. Before or after that separation, the carrier 910 can be divided into first and second carrier segments, for example, by sawing the carrier 910 along cutting planes. For example, these cutting planes can pass between the first and second surface regions 921, 922. In this case, preferably, first and second carrier segments are created, each of the first carrier segments forming one of the first surface regions 921 and each of the second carrier segments forming one of the second surface regions 921. The second carrier segments are typically removed from the carrier device 930 and therefore do not form any part of the completed carrier device 900. After separation, the regions 932 are flexible and can, for example, be rotated or bent to allow the desired relative alignment of the carrier segments with each other.
[0121] 10A and 10B show a schematic representation of a further embodiment of the carrier device 1000 proposed herein, with FIG. 10B showing an enlarged partial cross-section of FIG. 10A. The carrier device 1000 corresponds in its construction and structure to, for example, the embodiment 700 shown in FIGS. 7A, 7B, and 7C, and therefore also comprises two rigid first carrier segments 1011 and a layer 1030, the edges of which are shown by dashed lines in FIGS. 10A and 10B. The layer 1030 has two first regions 1031 covering a first surface region 1021 formed by the first carrier segments 1011, and a second region 1032 connecting the two first regions 1031 but not located on the first carrier segments 1011, passing between them and thus connecting them to each other. Due to the flexibility of the layer 1030 in the second region 1032 separated from the original carrier 1010, the two first carrier segments 1011 can move relative to each other, for example to perform compensatory movements relative to each other.
[0122] The layer 1030 is composed of multiple layers, including in particular electrically insulating and conductive layers, thus forming, for example, a wiring layer. The wiring layers each have electrical wires 1070 passing through the two first and second regions 1031, 1032 of the layer 1030, thus enabling electrical signal transmission between the two first carrier segments 1011. Furthermore, electrical contact elements 1060 and plated through holes 1061 are arranged on the two first carrier segments 1011, each of which allows electrical contact with the wires 1070. The contact elements 1060 and / or plated through holes 1061 can, for example, already be produced before the production of the layer 1030 on the first surface region 1021, or only afterwards.
[0123] The embodiments shown herein may, for example, be microsystems or parts of microsystems, for example for microelectronic, micromechanical, microfluidic, and / or electro-optical applications. As already mentioned, the shown carrier devices can be connected to further components (see the preceding component examples), in particular via the shown contact elements and plated through holes. Furthermore, further components and further carriers can be arranged on the shown carriers, carrier segments, and further carriers, as well as on or within the shown layers, to extend the functionality of the respective microsystems and / or to create further contact surfaces and interfaces. Advantageously, substrate effects and thermomechanical stresses can also be reduced by flexible regions of the respective layers.
[0124] Advantageously, many embodiments of the present invention can use known methods of microelectronics or microsystems technology, such as thin film methods, lithography methods, etching methods, laser ablation methods, etc. These methods can be advantageously combined in a single process method, resulting in a significant reduction in the complexity of the proposed production method compared to conventional production methods. [Explanation of symbols]
[0125] 100;500;600;700;800;900;1000 Carrier Device 110;510;610;710;810;910;1010 Carrier;Substrate 711;1011 First Carrier Segment 712;1012 Second Carrier Segment 715;815 Further carriers;substrates 120;520;620;720;820;920;1020 surface 121;521;621;721;821;921;1021 First surface area 122;722;922 Second Surface Area 130;530;630;730;830;930;1030 layers 131;531;631;731;831;931;1031 First Area 132;532;632;732;832;932;1032 Second Area 133, 134 partial layer 135;535;635;735;835 Curvature area 136;536;636;736;836 flat area 150;550;650;850 components 760;860;960;1060 contact elements 761;861;961;1061 plated through hole 570;970;1070 line 880 connection elements
Claims
1. 1. A method of generating a carrier device, comprising: creating a layer on a surface of a carrier, the layer having a first region and a second region connected to the first region, the first region covering the first surface region of the carrier and the second region covering the second surface region of the carrier; separating a second region of the layer from the carrier, wherein a first region of the layer remains on the first surface region of the carrier and is not separated from the second region, and the layer is flexible in the separated second region; Equipped with Prior to forming the layer on the surface of the carrier, an adhesion-enhancing intermediate layer is applied to at least the first surface area of the carrier, in which case either the application to the second surface area is excluded or the adhesion-enhancing intermediate layer, which has also been applied to the second surface area, is removed again from the second surface area of the carrier before the layer is produced on the surface of the carrier, the intermediate layer that enhances the adhesion is formed from only one layer of atoms or molecules of the material of the intermediate layer that enhances the adhesion; or an adhesion-reducing intermediate layer is applied to at least the second surface region of the carrier, in which case either the application to the first surface region is excluded or the adhesion-reducing intermediate layer, which has also been applied to the first surface region, is removed again from the first surface region of the carrier before the layer is formed on the surface of the carrier, the adhesion-reducing intermediate layer is formed from only one layer of atoms or molecules of the adhesion-reducing intermediate layer material; method.
2. The method of claim 1 , wherein the second region of the layer separated from the carrier is bent or folded.
3. The method according to claim 1 or 2, wherein the second region separated from the carrier is connected to a further carrier of the carrier device.
4. 4. The method of claim 1, wherein before or after the second region of the layer is separated from the carrier, the carrier is cut at the second surface region or between the first and second surface regions without separating the first region of the layer from the second region of the layer.
5. 5. The method of claim 1, wherein before the second region of the layer is separated from the carrier, adhesion of the second region of the layer to the second surface region is reduced by irradiating the second surface region of the carrier and / or the second region of the layer adhering to the second surface region with electromagnetic radiation through the carrier.
6. 6. The method of claim 1, wherein the second region of the layer is separated from the carrier by etching away a region of the carrier that forms the second surface region of the carrier.
7. 7. The method of claim 1, wherein the carrier is formed entirely or at least in some areas from silicon, glass, metal, ceramic and / or polymer.
8. The method according to any one of claims 1 to 7, wherein the carrier is a wafer, a portion of a wafer, a plate or a band.
9. 9. The method according to claim 1, wherein the layer is formed entirely or at least in some areas from a polymer, from a metal, from glass and / or from silicon.
10. The method of claim 9 , wherein the polymer comprises a polyimide or a polybenzoxazole.
11. 11. The method according to claim 1, wherein the total thickness of the layers is between 1 μm and 300 μm.
12. 11. The method according to claim 1, wherein the total thickness of the layers is between 1 μm and 100 μm.
13. 11. The method according to claim 1, wherein the total thickness of the layers is between 1 μm and 50 μm.
14. 14. The method according to claim 1, wherein during the production of the layer on the surface of the carrier, at least one insulating layer of the layer is formed from an electrically insulating material, the at least one insulating layer covering at least the first surface area and the second surface area of the carrier, and a conductive layer of a conductive material of the layer is formed on the at least one insulating layer, the conductive layer having at least one conductor track.
15. 15. The method of claim 14, wherein at least one of the conductive layers comprises at least one continuous conductor track starting from the first region of the layer and extending to the second region of the layer.
16. 16. The method according to claim 1, wherein at least one electrical contact element is arranged on the surface of the carrier in the first surface area, and an electrical connection is established between the at least one electrical contact element and at least one conductor track of the layer.
17. 17. The method of claim 16, wherein starting from the first surface region of the carrier, the electrical contact elements extend partially or completely through the first region of the layer.
18. 18. The method according to claim 16 or 17, wherein the electrical contact elements are connected in a conductive manner to conductor tracks arranged on the carrier and / or to electronic components arranged on the carrier.
19. 19. The method according to any one of claims 1 to 18, wherein at least one electrical contact element and / or at least one electronic component is arranged on the first region and / or the second region of the layer or is integrated into the first region and / or the second region of the layer.
20. a carrier having a surface; a layer having a first region disposed on a first surface region of the surface of the carrier and a flexible second region connected to the first region and not disposed on or elevated from the surface of the carrier; A carrier device comprising: The carrier device further comprises: an intermediate layer that enhances adhesion, the intermediate layer being formed of a single layer of atoms or molecules of a material of the intermediate layer that enhances adhesion and is located between the first surface region of the carrier and the first region of the layer; or an intermediate layer configured to reduce adhesion, the intermediate layer being formed from a monolayer of atoms or molecules of a material of the intermediate layer configured to reduce adhesion and located on a second surface region of the carrier adjacent the first surface region and located below the flexible second region of the layer; a gap is formed between the flexible second region of the layer and the surface of the carrier. Carrier device.
21. 21. The carrier device of claim 20, wherein the carrier device does not include an additional layer formed of an adhesive between the surface of the carrier and the first region of the layer.
22. 21. The carrier device of claim 20, wherein the carrier device does not include a further layer formed from the adhesive between the surface of the carrier and the first region of the layer that is thicker than a monolayer of atoms or molecules of adhesive material.
23. 23. A carrier device according to any one of claims 20 to 22, wherein the second region of the layer projects laterally beyond an edge of the carrier.
24. 24. A carrier device according to any one of claims 21 to 23, wherein a plane defined by the second region of the layer forms a non-zero angle with a plane defined by the surface of the carrier.
25. 25. The carrier device of claim 24, wherein the angle is greater than 0 degrees and less than 180 degrees.
26. 26. The carrier device of claim 25, wherein the angle is in the range between 85 degrees and 95 degrees.
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