SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To provide a substrate processing apparatus and a substrate processing method.SOLUTION: A substrate processing apparatus of the present invention includes: a chamber body providing a processing space for processing a substrate with a treatment fluid in a supercritical state; a substrate support unit supporting the substrate in the processing space; a fluid supply unit including a fluid supply line to supply the treatment fluid to the processing space; and a supply line heating unit to heat the fluid supply line.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method, and more particularly, to an apparatus and a method capable of processing a substrate using a fluid in a supercritical state. [Background technology]

[0002] In general, semiconductors are manufactured by forming circuit patterns on a substrate such as a silicon wafer through various processes including a photolithography process. During this manufacturing process, various foreign substances such as particles, organic contaminants, and metal impurities are generated, which can cause defects in the substrate and directly affect the yield of semiconductor devices. Therefore, a cleaning process for removing foreign substances from the substrate is essential in the semiconductor manufacturing process.

[0003] Generally, cleaning of a substrate is carried out by removing foreign matter on the substrate using chemicals, cleaning the substrate with pure water, and then drying it using isopropyl alcohol (IPA). However, this cleaning process is not suitable for semiconductor devices with a line width of 30 nm or less, because not only is the drying efficiency of the substrate low when the circuit pattern of the semiconductor element is fine, but the collapse phenomenon in which the circuit pattern is damaged during the drying process frequently occurs.

[0004] Therefore, recently, active research has been conducted into a process of drying a substrate using a supercritical fluid that can overcome such drawbacks. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Korean Patent Registration No. 10-2225957 (March 11, 2021) [Patent Document 2] Korean Patent Publication No. 10-2021-0066204 (June 7, 2021) Summary of the Invention [Problem to be solved by the invention]

[0006] SUMMARY OF THE DISCLOSURE An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of minimizing the temperature deviation of a fluid used to perform a supercritical process.

[0007] SUMMARY OF THE DISCLOSURE An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of maintaining substrate processing conditions more constant by performing a supercritical process.

[0008] An object of the embodiments of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of shortening the time required for a supercritical process.

[0009] The problems to be solved are not limited to those described above, and other problems not described above will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0010] According to an embodiment of the present invention, there is provided a substrate processing apparatus including a chamber body providing a processing space for processing a substrate with a processing fluid in a supercritical state, a substrate support unit supporting the substrate in the processing space, a fluid supply unit including a fluid supply line supplying the processing fluid to the processing space, and a supply line heating unit heating the fluid supply line.

[0011] The supply line heating unit may be configured to heat the fluid supply line with an elevated temperature heating fluid.

[0012] The supply line heating unit can heat the fluid supply line by causing the heated fluid to flow into the fluid supply line.

[0013] The heating fluid may include an inert gas, the heating fluid may include an inert gas having a higher thermal conductivity than the processing fluid.

[0014] The supply line heating unit may operate in an idle mode, and the fluid supply unit may open the fluid supply line in the idle mode to allow the heated fluid to be supplied along the fluid supply line to the processing space.

[0015] The substrate processing apparatus according to the embodiment of the present invention may further include a fluid recovery unit that recovers the heating fluid flowing into the processing space to the supply line heating unit.

[0016] The supply line heating unit may include a fluid inlet line for injecting the heating fluid into the fluid supply line, and an inlet line heater for heating the heating fluid flowing along the fluid inlet line.

[0017] The fluid supply unit may further include a supply line heater for heating the process fluid flowing along the fluid supply line.

[0018] The supply line heater may be installed downstream of a portion of the fluid supply line to which the fluid injection line is connected.

[0019] The fluid supply unit may further include a filter disposed downstream of a portion of the fluid supply line to which the fluid injection line is connected.

[0020] The supply line heater is operable to heat the process fluid above a critical temperature.

[0021] According to an embodiment of the present invention, there is provided a substrate processing apparatus including: a chamber body providing a processing space for processing a substrate with a processing fluid in a supercritical state; a chamber heater for heating the processing space to a temperature equal to or higher than the critical temperature of the processing fluid; a substrate supporting unit for supporting the substrate in the processing space; a fluid supply unit having a fluid supply line for supplying the processing fluid to the processing space, the fluid supply line having a filter and a supply line opening / closing valve respectively provided on the fluid supply line; a vent unit connected to the processing space; and a supply line heating unit having a fluid injection line for injecting a heating fluid into the fluid supply line, the fluid injection line having an injection line heater and an injection line opening / closing valve respectively provided on the fluid injection line, the fluid injection line being connected to the upstream side of the filter in the fluid supply line; wherein the supply line heating unit operates in an idle mode to flow the heated heating fluid into the fluid supply line to heat the fluid supply line, and the fluid supply unit operates in an idle mode with the supply line opening / closing valve open so that the heated heating fluid can be supplied to the processing space along the fluid supply line.

[0022] The fluid supply unit may further include a supply line heater that heats the processing fluid flowing along the fluid supply line to a critical temperature or higher. The fluid supply line may include a main line, a first branch line branching from the main line to supply the processing fluid to an upper portion of the processing space, and a second branch line branching from the main line to supply the processing fluid to a lower portion of the processing space. The filter may be disposed in the main line. The supply line opening / closing valves may be disposed in the main line, the first branch line, and the second branch line, respectively. The supply line heater may be disposed between a portion of the main line to which the fluid injection line is connected and the filter, and may heat the heating fluid in the idle mode.

[0023] The substrate processing apparatus according to the embodiment of the present invention may further include a fluid recovery unit that recovers the heating fluid, the temperature of which has been increased in the idle mode, from the processing space to the supply line heating unit.

[0024] Meanwhile, in a substrate processing apparatus according to an embodiment of the present invention, the supply line heating unit may be configured to include a heating fluid line that encloses the fluid supply line and forms a double pipe with the fluid supply line, and to flow the heated heating fluid into the heating fluid line to heat the fluid supply line.

[0025] According to an embodiment of the present invention, there is provided a method for processing a substrate with a processing fluid in a supercritical state in a processing space of a chamber body, the method including a first step of heating a fluid supply line connected to the processing space in an idle mode, and a second step of supplying the processing fluid to the processing space through the heated fluid supply line to pressurize the processing space and perform a supercritical process mode for processing the substrate.

[0026] The first step may include flowing a heated fluid having an elevated temperature into the fluid supply line to heat the fluid supply line.

[0027] In the first step, a heated fluid having a raised temperature can be caused to flow through the fluid supply line while the fluid supply line is open, thereby supplying the heated fluid having a raised temperature to the processing space.

[0028] The first step may determine an elevated temperature of the heating fluid based on at least one of a temperature of the fluid supply line and a temperature of the processing space.

[0029] The means for solving the problems will become more specific and clear through the embodiments, drawings, etc. described below. In addition, various means for solving the problems other than the above-mentioned means for solving the problems can be further presented below. Effect of the Invention

[0030] According to an embodiment of the present invention, the fluid supply line of the fluid supply unit is heated by the supply line heating unit, so that the processing fluid flowing along the fluid supply line to the processing space of the chamber body can be adjusted to a certain temperature range by heat transfer in order to perform a supercritical process. Thus, when performing a supercritical process, the processing fluid adjusted to a certain temperature range is supplied to the processing space, so that the time required to create a supercritical atmosphere can be shortened. In addition, the temperature deviation of the processing fluid due to a temperature drop in the fluid supply line is minimized, so that damage to the substrate can be reduced and the substrate processing conditions can be maintained more constant.

[0031] The effects of the present invention are not limited thereto, and other effects not described above will be clearly understood by those skilled in the art from the present specification and the accompanying drawings. [Brief description of the drawings]

[0032] [Figure 1] 1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention; [Diagram 2] 2 is a cross-sectional view showing a first process chamber shown in FIG. 1; [Diagram 3] FIG. 1 is a diagram of the phase change of carbon dioxide. [Figure 4] 2 is a configuration diagram illustrating an example of a second process chamber shown in FIG. 1. [Diagram 5] 5 is a flow chart showing the operation of the second process chamber shown in FIG. 4. [Figure 6] 1 is a configuration diagram showing a fluid supply module of a substrate processing apparatus according to an embodiment of the present invention; [Figure 7] 10A to 10C are configuration diagrams showing modified examples of a second process chamber of the substrate processing apparatus according to the embodiment of the present invention. [Figure 8] 10A to 10C are configuration diagrams showing modified examples of a second process chamber of the substrate processing apparatus according to the embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0033] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the accompanying drawings, in order to enable those skilled in the art to easily carry out the present invention. However, the present invention may be embodied in many different forms and is not limited to the embodiments set forth herein.

[0034] In describing embodiments of the present invention, if it is determined that a specific description of related publicly known functions or configurations may unnecessarily obscure the gist of the present invention, the specific description will be omitted and parts having similar functions and operations will be given the same symbols throughout the drawings.

[0035] At least some of the terms used in this specification are defined in consideration of the functions of the present invention, and may vary depending on the intentions, practices, etc. of users and operators. Therefore, the terms should be interpreted based on the contents of the entire specification. In addition, when a certain component is included in the specification, this does not mean that other components are excluded, but that other components can be further included, unless otherwise specified. And when a part is connected (or coupled) to another part, this includes not only the case where it is directly connected (or coupled) to another part, but also the case where it is indirectly connected (or coupled) to another part.

[0036] On the other hand, the size, shape, and thickness of lines of components in the drawings may be somewhat exaggerated for ease of understanding.

[0037] The substrate processing apparatus according to the embodiment of the present invention can perform a supercritical process. The supercritical process means a process of processing a substrate using a fluid in a supercritical state. For example, the supercritical process may be a supercritical cleaning process in which cleaning is performed as a process for a substrate using a fluid in a supercritical state, or a supercritical drying process in which drying is performed. Of course, the supercritical process is not limited to these examples.

[0038] The substrate to be processed by the substrate processing apparatus according to the embodiment of the present invention should be interpreted as a comprehensive concept including various wafers including silicon and wafers, organic substrates and glass substrates, as well as substrates used in manufacturing semiconductor devices, displays and other articles on which circuit patterns are formed in thin films.

[0039] A substrate processing apparatus according to an embodiment of the present invention may include an index module (see reference number 1000 in FIG. 1), a process module (see reference number 2000 in FIG. 1), and a fluid supply module (see reference number 3000 in FIG. 6). The index module may transport a substrate (see reference number S in FIGS. 2 and 4) from outside to the process module. The process module may process the substrate using a fluid. The fluid supply module may supply the fluid to the process module.

[0040] 1 is a plan view showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. The configuration of an index module and a process module are shown in FIG. 1. Referring to FIG. 1, an index module 1000 may be an equipment front end module (EFEM) including a load port 1100 and an index unit 1200. The process module 2000 may include a buffer chamber 2100, a transfer chamber 2200, a first process chamber 2300, and a second process chamber 2400.

[0041] The load port 1100, the index unit 1200, and the process module 2000 may be sequentially arranged in a row. A direction in which the load port 1100, the index unit 1200, and the process module 2000 are sequentially arranged is defined as a first direction X. In addition, when viewed from above, a direction perpendicular to the first direction X is defined as a second direction Y, and a direction perpendicular to both the first direction X and the second direction Y is defined as a third direction Z.

[0042] A plurality of load ports 1100 may be arranged in a row along the second direction Y. The substrate may be accommodated in a container C. The container C may be a front opening unified pod (FOUP). The container C may be transported from the outside and loaded onto the load port 1100, or may be unloaded from the load port 1100 and transported to the outside. The container C may be transported between the load ports 1100 of the substrate processing apparatus by a container transport device such as an overhead hoist transport (OHT), an automated guided vehicle (AGV), or a rail guided vehicle (RGV), or by an operator.

[0043] The index unit 1200 may transport a substrate between a container C loaded on the load port 1100 and the process module 2000. The index unit 1200 may include an index rail 1210 and an index robot 1220. The index rail 1210 may provide a path along which the index robot 1220 moves. The index rail 1210 may be provided such that a longitudinal direction of the index rail 1210 is aligned with a second direction Y. The index robot 1220 may transport the substrate.

[0044] The index robot 1220 may include a robot base 1221, a robot body 1222, and a robot arm 1223. The robot base 1221 may move along the index rail 1210. The robot body 1222 may be provided on the robot base 1221 to be movable along a third direction Z and to be rotatable about an axis of the third direction Z. The robot arm 1223 may be provided on the robot body 1222 to be movable forward and backward. A hand may be provided at one end of the robot arm 1223 to hold or release the substrate. For example, the index robot 1220 may include a plurality of robot arms 1223, which may be arranged in a stacked manner along the third direction Z and driven individually. In the index robot 1220, the robot base 1221 moves along the index rail 1210, and the robot body 1222 and the robot arm 1223 are operated to transport the substrate between the container C and the process module 2000.

[0045] The index module 1000, the buffer chamber 2100, and the transfer chamber 2200 may be sequentially arranged along a first direction X. The transfer chamber 2200 may be arranged such that its longitudinal direction is aligned with the first direction X. The first process chamber 2300 and the second process chamber 2400 may be arranged on either side of the transfer chamber 2200 in the second direction Y. For example, the first process chamber 2300 and the second process chamber 2400 may be arranged to face each other on both sides of the transfer chamber 2200 in the second direction Y. The arrangement of the chambers 2100, 2200, 2300, and 2400 is not limited thereto and may be changed as appropriate depending on various factors such as footprint and process efficiency.

[0046] The buffer chamber 2100 may provide a space for temporarily storing a substrate transferred between the index module 1000 and the process module 2000. For example, when the index robot 1220 transfers a substrate from a container C to the buffer chamber 2100, the transfer robot 2220 in the transfer chamber 2200 may transfer the substrate from the buffer chamber 2100 to the first process chamber 2300 or the second process chamber 2400.

[0047] The transfer chamber 2200 may transfer a substrate between the buffer chamber 2100, the first process chamber 2300, and the second process chamber 2400 arranged therearound. The transfer chamber 2200 may include a transfer rail 2210 and a transfer robot 2220. The transfer rail 2210 may provide a path along which the transfer robot 2220 moves. The transfer rails 2210 may be arranged side by side in a first direction X. The transfer robot 2220 may transfer the substrate.

[0048] The transfer robot 2220 may include a robot base 2221, a robot body 2222, and a robot arm 2223. The robot base 2221, the robot body 2222, and the robot arm 2223 of the transfer robot 2220 are configured similarly to the robot base 1221, the robot body 1222, and the robot arm 1223 of the index robot 1220, and therefore detailed description thereof will be omitted. In the transfer robot 2220, the robot base 2221 moves along the transfer rail 2210, and the robot body 2222 and the robot arm 2223 are operated to transfer substrates between the buffer chamber 2100, the first process chamber 2300, and the second process chamber 2400.

[0049] The first process chamber 2300 and the second process chamber 2400 may perform different processes on the substrate. The first process performed in the first process chamber 2300 and the second process performed in the second process chamber 2400 may be processes performed sequentially. For example, the first process including a chemical process, a cleaning process, and a first drying process may be performed in the first process chamber 2300, and the second process including a second drying process may be performed as a process subsequent to the first process in the second process chamber 2400. The first drying process may be a wet drying process using an organic solvent, and the second drying process may be a supercritical drying process using a fluid in a supercritical state. In some cases, only one selected from the first drying process and the second drying process may be performed. Of course, the processes performed in the first process chamber 2300 and the second process chamber 2400 are not limited to this example.

[0050] FIG. 2 is a schematic cross-sectional view of a first process chamber 2300 of a substrate processing apparatus according to an embodiment of the present invention. The first process chamber 2300 will be described with reference to FIG. 2. The first process chamber 2300 may include a housing 2310 (see FIG. 1), a substrate supporting unit 2320, a fluid supplying unit 2330, and a process vessel 2340. The housing 2310 may provide a process space in which a first process is performed. The substrate supporting unit 2320 may support a substrate S in the process space of the housing 2310. The fluid supplying unit 2330 may supply a fluid for the first process to the substrate S supported by the substrate supporting unit 2320. The process vessel 2340 may collect a fluid splashed from the substrate S during the first process.

[0051] The substrate supporting unit 2320 of the first process chamber 2300 may include a spin head 2321, a plurality of chuck pins 2323, and rotation driving mechanisms 2325 and 2326. The spin head 2321 is rotatably installed about an axis in the third direction Z, and the rotation driving mechanisms 2325 and 2326 can rotate the spin head 2321. The spin head 2321 may include support pins 2322 that support a substrate S (hereinafter, the reference numerals will be omitted), and the chuck pins 2323 can fix the position of the substrate supported by the support pins 2322.

[0052] The support pins 2322 may be arranged at intervals to protrude from the upper surface of the spin head 2321 to support the lower surface of the substrate. The chuck pins 2323 may be provided on the spin head 2321. The chuck pins 2323 may support the periphery of the substrate in a contact manner at positions spaced apart from each other to prevent the substrate from being removed from a fixed position. Specifically, the chuck pins 2323 may be moved from the center of the spin head 2321 to the outside and positioned at a standby position by a pin driving mechanism, or may be moved from the outside of the spin head 2321 to the center and positioned at a support position. The chuck pins 2323 may be moved to a standby position and positioned at a standby position when a substrate is loaded or unloaded from the spin head 2321, and may be moved to a support position and supported by the substrate during a first process for processing the loaded substrate. The chuck pins 2323 and the pin driving mechanism may constitute a substrate chuck.

[0053] The rotation drive mechanisms 2325, 2326 may include a shaft member 2325 in the third direction Z to which the spin head 2321 is connected, and a drive motor 2326 that rotates the shaft member 2325. When the spin head 2321 is rotated by the rotation drive mechanisms 2325, 2326, the substrate, the position of which is fixed by the chuck pins 2323, can be rotated.

[0054] The fluid supply unit 2330 of the first process chamber 2300 may include an arm support 2331 , a nozzle arm 2332 , a nozzle 2333 , and a support driving mechanism 2334 .

[0055] The processing vessel 2340 is disposed in the processing space of the housing 2310, and is formed to have a cup structure with an open top and a storage space communicating with the open top, and the spin head 2321 may be disposed in the storage space. The arm support 2331 may be disposed outside the processing vessel 2340 in the processing space of the housing 2310, and may be provided such that its longitudinal direction is aligned with the third direction Z. The nozzle arm 2332 may be coupled to an upper end of the arm support 2331 and extend in a direction perpendicular to the third direction Z. The nozzle 2333 may be provided at a tip of the nozzle arm 2332 to eject a fluid downward. The support drive mechanism 2334 may be configured to perform at least one of rotation (rotation around an axis in the third direction) and elevation (elevation along the third direction) of the arm support 2331. When the support drive mechanism 2334 is operated, the nozzle 2333 may move (rotational movement and / or elevation movement).

[0056] According to the fluid supply unit 2330, the nozzle 2333 can be rotated around the arm support 2331 by the support drive mechanism 2334 to be located at a standby position or a supply position. At this time, the standby position of the nozzle 2333 can be a position where the nozzle 2333 is off the vertical upper part of the spin head 2321, and the supply position of the nozzle 2333 can be a position where the nozzle 2333 is disposed at the vertical upper part of the spin head 2321 so that the fluid discharged from the nozzle 2333 is supplied to the substrate on the spin head 2321. When the substrate is loaded or unloaded from the spin head 2321, the nozzle 2333 can move to the standby position to wait, and can move to the supply position to supply the fluid to the upper surface of the substrate while a first process for processing the loaded substrate is being performed.

[0057] The first process chamber 2300 may include a plurality of the fluid supply units 2330 described above. The plurality of fluid supply units 2330 may supply different fluids. For example, the different fluids supplied by the plurality of fluid supply units 2330 may be a cleaning agent, a rinsing agent, and an organic solvent. For example, the cleaning agent may be a hydrogen peroxide solution, a solution in which ammonia, hydrochloric acid, or sulfuric acid is mixed with a hydrogen peroxide solution, or a hydrofluoric acid solution. The rinsing agent may be pure water. The organic solvent may be isopropyl alcohol. Of course, the cleaning agent, the rinsing agent, and the organic solvent are not limited to these examples.

[0058] When a fluid is supplied to the upper surface of the substrate from the nozzle 2333 and the spin head 2321 rotates, the fluid supplied to the substrate can be scattered from the substrate to the surroundings. The processing vessel 2340 can collect the scattered fluid. The processing vessel 2340 can be composed of multiple vessels. The multiple vessels can collect different fluids from each other, and the number of vessels can be appropriately selected depending on the number of fluids used in the first process. The processing vessel 2340 will be described based on a case where it is composed of three vessels.

[0059] The cup-shaped containers constituting the processing container 2340 may be arranged farther from the center of the spin head 2321 in the order of the first container 2340a, the second container 2340b, and the third container 2340c. The processing container 2340 has inlets 2341 formed at different heights along the third direction Z in each of the containers 2340a, 2340b, and 2340c. The processing container 2340 may be provided in a structure capable of ascending and descending along the third direction Z so that any of the inlets 2341a, 2341b, and 2341c is positioned at the same height as the substrate on the spin head 2321. For example, a lifting drive mechanism 2343 may be connected to the third container 2340c. A recovery line 2342 for transporting the recovered fluid to a regenerator may be connected to each of the containers 2340a, 2340b, and 2340c at the bottom.

[0060] Next, an example of a procedure in which the first process is performed in the first process chamber 2300 will be described.

[0061] When the substrate is carried into the processing space of the housing 2310 by the transfer robot 2220 and loaded onto the spin head 2321, a cleaning agent is supplied as a fluid onto the upper surface of the substrate, the substrate is rotated by the spin head 2321 so that the supplied cleaning agent spreads evenly over the upper surface of the substrate, and the processing vessel 2340 is raised and lowered so that the first inlet 2341a of the first vessel 2340a is positioned at the same height as the substrate. In this process, foreign matter on the substrate is removed by the cleaning agent, and the cleaning agent scattered from the substrate is collected into the first vessel 2340a.

[0062] After the chemical process of removing foreign matter with a cleaning agent is completed, pure water is supplied to the upper surface of the substrate as a rinse agent, and the processing vessel 2340 is raised and lowered so that the second inlet 2341b of the second vessel 2340b is positioned at the same height as the substrate. In this process, the cleaning agent remaining on the substrate is removed by the pure water, and the pure water scattered from the substrate is collected in the first vessel 2340a.

[0063] After the cleaning process of removing the cleaning agent with a rinse agent is completed, an organic solvent is supplied to the upper surface of the substrate, and the processing vessel 2340 is raised and lowered so that the third inlet 2341c of the third vessel 2340c is positioned at the same height as the substrate. Here, a first drying process is performed in which the organic solvent replaces the pure water, and the organic solvent scattered from the substrate is collected in the third vessel 2340c.

[0064] In the second process chamber 2400, the second process including the supercritical drying process using a fluid in a supercritical state can be performed. The term "supercritical fluid" refers to a fluid in a state where a material reaches a critical state, i.e., a state exceeding the critical temperature and critical pressure, and cannot be distinguished between liquid and gas. In the case of a supercritical fluid, the molecular density is close to that of a liquid, but the viscosity is close to that of a gas. Such a supercritical fluid has a very high diffusion force, permeability, and dissolving force, which is advantageous for chemical reactions. In addition, since the surface tension of a supercritical fluid is very low, it does not apply interfacial tension to a microstructure, so that when used in a drying process for a substrate, it is possible to ensure excellent drying efficiency and prevent collapse. In the supercritical drying process, carbon dioxide can be used as the supercritical fluid. Of course, the supercritical fluid is not limited to carbon dioxide.

[0065] FIG. 3 is a diagram of the phase change of carbon dioxide. Carbon dioxide becomes supercritical when the temperature is 31.1°C or higher and the pressure is 7.38Mpa or higher. Carbon dioxide is non-toxic, non-flammable, and inert. Carbon dioxide has low critical temperature and pressure, so it is easy to control the dissolving power by adjusting the temperature and pressure, and has advantageous physical properties for use in the drying process, such as a diffusion coefficient 10 to 100 times lower than water and other organic solvents and extremely small surface tension. In addition, carbon dioxide can be recycled and reused when produced as a by-product of various chemical reactions, and can also be regenerated and reused when used in the drying process, so it is less of a burden in terms of environmental pollution.

[0066] FIG. 4 is a schematic diagram illustrating an example of a second process chamber 2400 of a substrate processing apparatus according to an embodiment of the present invention. FIG. 5 is a flow chart illustrating an example of an operation of the second process chamber 2400 illustrated in FIG. 4. The second process chamber 2400 will be described with reference to FIGS. 4 and 5. The second process chamber 2400 may include a chamber body 2410, a chamber heater 2420, a substrate support unit 2430, a fluid supply unit 2440, a vent unit 2470, a drain unit 2480, and a supply line heating unit 2450. A second process including a supercritical drying process may be performed in the chamber body 2410. The substrate may be treated by a fluid in a supercritical state in the chamber body 2410. A fluid for performing the supercritical drying process may be supplied to the chamber body 2410 by the fluid supply unit 2440. Hereinafter, a fluid that becomes a supercritical state to perform a supercritical drying process is referred to as a processing fluid.

[0067] The chamber body 2410 is configured to provide an internal processing space 2411 that is a space in which the second process is performed and can be isolated from the outside, and can be provided to have a structure that can sufficiently withstand high temperatures and pressures for performing a supercritical drying process. The chamber body 2410 includes an upper body 2415 and a lower body 2416, and the processing space 2411 can be provided by combining the upper body 2415 and the lower body 2416.

[0068] The upper body 2415 may be disposed above the lower body 2416 and may be fixed in position. The lower body 2416 may be raised and lowered in the third direction Z relative to the upper body 2415 by a body lifting mechanism such as a cylinder. When the lower body 2416 is lowered and separated from the upper body 2415, the processing space 2411 of the chamber body 2410 is opened, so that a substrate can be loaded into or unloaded from the processing space 2411. When the lower body 2416 is raised and comes into close contact with the upper body 2415, the processing space 2411 is sealed, so that the processing space 2411 can be isolated from the outside when the second process is performed.

[0069] The chamber heater 2420 heats the processing space 2411 of the chamber body 2410 to maintain the processing fluid supplied to the processing space 2411 in a supercritical state. The chamber heater 2420 heats the processing fluid to a temperature equal to or higher than the critical temperature. The chamber heater 2420 creates a supercritical atmosphere in the processing space 2411. For example, the chamber heater 2420 may be provided on a wall of the chamber body 2410.

[0070] The substrate supporting unit 2430 of the second process chamber 2400 is disposed in the processing space 2411 of the chamber body 2410. The substrate supporting unit 2430 supports a substrate transferred into the processing space 2411 by the transfer robot 2220. The substrate supporting unit 2430 may be provided as a fixed structure or a rotatable structure.

[0071] The fluid supply unit 2440 of the second process chamber 2400 may include a fluid supply line 2441 that supplies a processing fluid to the processing space 2411. The fluid supply unit 2440 may also include a backflow prevention valve 2445, a filter 2446, and a plurality of supply line opening and closing valves 2447a, 2447b, and 2447c that are provided on the fluid supply line 2441. For example, the processing fluid may be supplied to the processing space 2411 in a gaseous state and may be phase-changed to a supercritical state in the processing space 2411. Alternatively, the processing fluid may be supplied to the processing space 2411 in a supercritical state.

[0072] The fluid supply line 2441 may include a main line 2442, a first branch line 2443, and a second branch line 2444. The first branch line 2443 and the second branch line 2444 may branch off from the main line 2442. The first branch line 2443 may be coupled to the upper body 2415 so as to supply the processing fluid from the main line 2442 to the processing space 2411 from above the substrate supported by the substrate support unit 2430. The second branch line 2444 may be coupled to the lower body 2416 so as to supply the processing fluid from the main line 2442 to the processing space 2411 from below the substrate supported by the substrate support unit 2430.

[0073] The supply line opening / closing valves may include a main valve 2447a, a first valve 2447b, and a second valve 2447c. The backflow prevention valve 2445, the filter 2446, and the main valve 2447a may be installed on the main line 2442, the first valve 2447b may be installed on the first branch line 2443, and the second valve 2447c may be installed on the second branch line 2444. The backflow prevention valve 2445 is disposed relatively upstream on the main line 2442 to prevent a phenomenon in which the processing fluid does not flow downstream (to the first and second branch lines) along the main line 2442 but flows backward. The main valve 2447a is disposed relatively downstream on the main line 2442 to open and close the main line 2442, thereby adjusting the flow rate of the processing fluid flowing from the main line 2442 to the first and second branch lines 2443 and 2444. The filter 2446 is disposed between the backflow prevention valve 2445 and the main valve 2447a, and can remove foreign matter from the processing fluid flowing along the main line 2442. The first valve 2447b opens and closes the first branch line 2443, and can adjust the flow rate of the processing fluid flowing along the first branch line 2443. The second valve 2447c opens and closes the second branch line 2444, and can adjust the flow rate of the processing fluid flowing along the second branch line 2444.

[0074] The vent unit 2470 is connected to the processing space 2411 and can discharge the processing fluid in a gas state supplied to the processing space 2411. The vent unit 2470 can discharge the processing fluid to the outside from an upper portion of the processing space 2411. The vent unit 2470 can include a vent line 2471 coupled to the upper body 2415, and a vent line opening / closing valve 2472 provided on the vent line 2471 to open and close the vent line 2471 and adjust the flow rate of the processing fluid flowing along the vent line 2471.

[0075] The drain unit 2480 is connected to the processing space 2411 and can discharge the processing fluid in a liquid state supplied to the processing space 2411. The drain unit 2480 can discharge the processing fluid to the outside from a lower portion of the processing space 2411. The drain unit 2480 can include a drain line 2481 coupled to the lower body 2416, and a drain line opening / closing valve 2482 provided on the drain line 2481 to open and close the drain line 2481 and adjust the flow rate of the processing fluid flowing along the drain line 2481.

[0076] The supply line heating unit 2450 can heat the fluid supply line 2441. The temperature of the processing fluid flowing along the heated fluid supply line 2441 can be adjusted to a certain range by heat transfer. For example, when the processing fluid is supplied to the processing space 2411 in a supercritical state, the temperature of the processing fluid can be prevented from dropping below the critical temperature during the supply of the processing fluid, and when the processing fluid is supplied to the processing space 2411 in a gaseous state, the temperature of the processing fluid can be increased during the supply of the processing fluid.

[0077] The second process chamber 2400 may operate in a supercritical process mode for performing a supercritical drying process, and may operate in an idle mode after the supercritical process mode is completed. The second process chamber 2400 may alternate between the supercritical process mode and the idle mode.

[0078] In order to operate in the supercritical process mode, the second process chamber 2400 may support a substrate using the substrate support unit 2430, and then seal the processing space 2411 by bringing the lowered lower body 2416 into close contact with the upper body 2415. The sealed processing space 2411 may be heated using the chamber heater 2420, and a processing fluid may be supplied to the sealed processing space 2411 using the fluid supply unit 2440 to create a supercritical atmosphere. At the beginning of the supercritical process mode when the processing fluid flows into the processing space 2411, the temperature of the processing space 2411 may not reach the critical temperature of the processing fluid. The supply line heating unit 2450 may increase the temperature of the fluid supply line 2441 to a certain level in the idle mode and supply the processing fluid adjusted to a certain temperature range to the processing space 2411 in the supercritical process mode, thereby shortening the time required to create a supercritical atmosphere. In addition, damage to the substrate can be reduced by minimizing temperature deviation of the processing fluid due to temperature drop of the fluid supply line 2441, and the substrate processing conditions can be maintained more constant between repeated supercritical drying processes.

[0079] The supply line heating unit 2450 can heat the fluid supply line 2441 using a heated fluid. Specifically, the supply line heating unit 2450 can heat the fluid supply line 2441 by flowing the heated fluid into the fluid supply line 2441. The heating fluid can include an inert gas having low reactivity, such as argon (Ar), helium (He), neon (Ne), and nitrogen gas (N2). In consideration of thermal energy transfer efficiency, an inert gas having high thermal conductivity can be used as the heating fluid. For example, the heating fluid can be nitrogen gas having a higher thermal conductivity than carbon dioxide, which is the processing fluid.

[0080] The supply line heating unit 2450 may include a fluid injection line 2451 for injecting a heating fluid into the fluid supply line 2441, an injection line heater 2452 for heating the heating fluid injected into the fluid supply line 2441 along the fluid injection line 2451, and an injection line opening / closing valve 2453 provided on the fluid injection line 2451 for opening and closing the fluid injection line 2451 and adjusting the flow rate of the heating fluid flowing along the fluid injection line 2451. The fluid injection line 2451 is connected to the fluid supply line 2441 and may inject the heating fluid into the fluid supply line 2441. The injection line heater 2452 is provided on the fluid injection line 2451 and may heat the heating fluid flowing along the fluid injection line 2451.

[0081] When the supply line heating unit 2450 is operated to inject the heated fluid into the fluid supply line 2441, the fluid supply unit 2440 may operate with the main valve 2447a, the first valve 2447b, and the second valve 2447c open. At this time, the heated fluid injected into the fluid supply line 2441 may flow into the processing space 2411. As a result, the heated fluid is injected into the fluid supply line 2441 to heat the main line 2442, the first branch line 2443, and the second branch line 2444, and flows into the processing space 2411 along the first branch line 2443 and the second branch line 2444 to adjust the temperature and humidity of the processing space 2411 to a level suitable for performing the second process.

[0082] The fluid injection line 2451 is connected between the backflow prevention valve 2445 and the filter 2446 in the main line 2442, and the heated fluid injected from the fluid injection line 2451 into the main line 2442 can flow into the processing space 2411 with foreign matter removed by the filter 2446.

[0083] Next, an example of a procedure in which the supercritical drying process is performed in the second process chamber 2400 will be described.

[0084] In an idle mode before or after the supercritical process mode, the processing volume 2411 may be sealed and the vent unit 2470 and the drain unit 2480 may be closed. The idle mode may be, but is not limited to, a state in which the processing volume 2411 is open and the vent unit 2470 is open.

[0085] In the idle mode, the supply line heating unit 2450 is operated to inject a heated fluid heated by the heating action of the injection line heater 2452 into the main line 2442. Before the supply line heating unit 2450 is operated, the main valve 2447a, the first valve 2447b, and the second valve 2447c can be opened to open the fluid supply line 2441. The fluid supply line 2441 can be opened simultaneously with the operation of the supply line heating unit 2450, or after the operation of the supply line heating unit 2450. At this time, the heated heated fluid flows along the fluid supply line 2441 to heat the fluid supply line 2441, flows into the processing space 2411 to heat the processing space 2411, and adjusts the humidity of the processing space 2411. For example, the heated fluid can be injected into the fluid supply line 2441 in a state where the temperature of the processing fluid is increased to or above the critical temperature. The temperature of the fluid supply line 2441 and the temperature of the processing space 2411 may be detected, and the temperature of the heating fluid may be increased to a higher temperature based on the detected temperatures.

[0086] Once the fluid supply line 2441 and processing space 2411 are filled with heated fluid, the supply line heating unit 2450 can be stopped. Without stopping the supply line heating unit 2450, the heated fluid can be vented from the processing space 2411 via the vent unit 2470 and further heated fluid can be injected, repeatedly.

[0087] Next, in order to proceed with the supercritical process mode, the vent unit 2470 can be operated to exhaust the heated fluid to the outside from the fluid supply line 2441 and the processing space 2411. Then, the supercritical process mode can be performed.

[0088] In the supercritical process mode, in the process of supplying the processing fluid to the processing space 2411 to create a supercritical atmosphere, the supply line heating unit 2450 may be operated to supply an inert gas as a heating fluid together. At this time, the heating fluid injected into the fluid supply line 2441 may be in a state in which it has been heated by the injection line heater 2452, or may not be in a state in which it has not been heated.

[0089] At the beginning of the supercritical process mode, the temperature of the processing space 2411 may not have reached the critical temperature and critical pressure of the processing fluid, so the processing fluid can be first supplied through the second branch line 2444, and once the processing space 2411 reaches a threshold state, it can be supplied through the first branch line 2443.

[0090] When the supercritical atmosphere is created, the organic solvent remaining on the substrate can be dissolved in the processing fluid in a supercritical state. When the organic solvent is sufficiently dissolved and the substrate is dried, the processing fluid can be discharged from the processing space 2411. Meanwhile, in order to increase the efficiency of dissolving the organic solvent, the supply and exhaust of the processing fluid can be repeated.

[0091] FIG. 6 is a schematic diagram showing a fluid supply module 3000 of a substrate processing apparatus according to an embodiment of the present invention.

[0092] Referring to FIG. 6, the fluid supply module 3000 may include a first tank 3100 in which a fluid to be provided to the nozzle 2333 of the first process chamber 2300 is stored, a second tank 3200 in which a processing fluid to be provided to the fluid supply line 2441 of the second process chamber 2400 is stored, and a third tank 3300 in which a heating fluid to be provided to the fluid injection line 2451 of the second process chamber 2400 is stored.

[0093] The fluid from the first tank 3100 can be pumped by a pump 3101 and can be provided to the nozzle 2333 after foreign matter has been removed by a filter 3102. The fluid from the first tank 3100 can be optionally heated by a heater 3103.

[0094] The processing fluid may be stored in a liquid state in the second tank 3200. Carbon dioxide, which is the processing fluid, may be stored in a larger amount in the second tank 3200 since the volume of the processing fluid in a liquid state is smaller than that in a gas state. Carbon dioxide from the second tank 3200 may be provided to the supply tank 3210. A pump 3201 and a condenser 3202 are disposed between the second tank 3200 and the supply tank 3210, so that the carbon dioxide may be pumped from the second tank 3200 to the supply tank 3210, and the carbon dioxide converted to a gas state due to a pressure reduction or the like may be converted back to a liquid state. The supply tank 3210 may be configured to heat and pressurize the carbon dioxide that has flowed in. The carbon dioxide that has flowed in the supply tank 3210 may be provided to the fluid supply line 2441 in a gas state according to the heating and pressurizing action of the supply tank 3210. Alternatively, the carbon dioxide flowing into the supply tank 3210 may be heated above its critical temperature and pressurized above its critical pressure to be provided to the fluid supply line 2441 in a supercritical state.

[0095] The substrate processing apparatus according to the embodiment of the present invention may further include a control unit. The control unit may control the operation of the whole or part of the substrate processing apparatus according to the embodiment of the present invention. The control unit may link various information in the substrate processing apparatus according to the embodiment of the present invention, perform arithmetic processing on the information, and control the components of the substrate processing apparatus according to the embodiment of the present invention. For example, the control unit may monitor and control the flow rate of the processing fluid supplied by the fluid supply unit 2440, the temperature and flow rate of the heating fluid injected by the supply line heating unit 2450, the temperature and humidity of the processing space 2411, etc., to improve the efficiency of the supercritical drying process. Such a control unit may be realized by a computer or a similar device using software, hardware, or a combination thereof.

[0096] 7 and 8 are schematic diagrams illustrating modified examples of a second process chamber 2400 of a substrate processing apparatus according to an embodiment of the present invention.

[0097] The modified example of the second process chamber 2400 shown in FIG. 7 differs from the example of the second process chamber 2400 shown in FIG. 4 in that it further includes a supply line heater 2448 for heating the processing fluid flowing along the fluid supply line 2441, while all other configurations and operations are the same.

[0098] The supply line heater 2448 is provided on the main line 2442 of the fluid supply line 2441. The supply line heater 2448 is disposed downstream of the portion of the main line 2442 to which the fluid injection line 2451 is connected.

[0099] The supply line heater 2448 can heat the processing fluid supplied to the processing space 2411 along the fluid supply line 2441, thereby shortening the time required to create a supercritical atmosphere. For example, when the processing fluid is supplied to the processing space 2411 in a supercritical state, the processing fluid can be heated to prevent the temperature of the processing fluid from dropping below the critical temperature during the supply process, and when the processing fluid is supplied to the processing space 2411 in a gaseous state, the processing fluid can be heated to raise the temperature of the processing fluid above the critical temperature. Furthermore, the supply line heater 2448 can further minimize particles that fall onto the substrate due to coagulation of organic solvents remaining in the processing space 2411 in a dissolved state by the processing fluid when the processing fluid in the supercritical state is converted into a gaseous state in the processing space 2411.

[0100] The supply line heater 2448 can operate without stopping even in the idle mode. Therefore, the heating fluid injected into the fluid supply line 2441 in the idle mode can be reheated by the supply line heater 2448. Therefore, the temperature drop of the heated heating fluid can be suppressed. Also, the heating temperature of the supercritical supply line heater 2448 can be maintained relatively constant during the supercritical drying process mode. For example, the processing fluid for processing the first substrate is heated to a relatively high temperature by the supply line heater 2448, and the processing of the substrate is repeated, and the processing fluid for processing the second substrate and thereafter can be heated to a relatively low temperature by the supply line heater 2448 due to the output limit of the supply line heater 2448. However, if the heating fluid injected into the fluid supply line 2441 in the idle mode is heated by the supply line heater 2448 to relatively lower the heating temperature of the supply line heater 2448, the difference between the temperature of the processing fluid for processing the first substrate and the temperature of the processing fluid for processing the second substrate and thereafter can be greatly reduced, and the substrate processing condition can be maintained more constant.

[0101] Compared with the example of the second process chamber 2400 shown in FIG. 4 and the modified example of the second process chamber 2400 shown in FIG. 7, the modified example of the second process chamber 2400 shown in FIG. 8 has the same configuration and operation as the modified example of the second process chamber 2400 shown in FIG. 7, but differs only in that it further includes a fluid recovery unit 2460 that recovers the heated fluid from the processing space 2411 to the supply line heating unit 2450.

[0102] The fluid recovery unit 2460 can circulate the heated fluid injected from the supply line heating unit 2450 into the fluid supply line 2441 and flowing into the processing space 2411 in a recovered manner. The fluid recovery unit 2460 can include a fluid recovery line 2461 connecting the supply line heating unit 2450 and the processing space 2411. One end of the fluid recovery line 2461 is connected to the upstream side of the vent line opening / closing valve 2472 in the vent line 2471, and the other end is connected to the upstream side of the injection line heater 2452 in the fluid injection line 2451, so that the heated fluid can be recovered from the processing space 2411 to the fluid injection line 2451 via the vent line 2471. The recovered heated fluid can be heated by the injection line heater 2452 and injected into the fluid supply line 2441 in a heated state. Meanwhile, the fluid recovery unit 2460 may further include a recovery line opening / closing valve 2642 provided on the fluid recovery line 2461 to open and close the fluid recovery line 2461 and adjust the flow rate of the heating fluid recovered along the fluid recovery line 2461.

[0103] Although the present invention has been described above, the present invention is not limited to the disclosed embodiments and the accompanying drawings, and may be modified in various ways by those skilled in the art without departing from the technical idea of ​​the present invention. In addition, the technical ideas described in the embodiments of the present invention may be implemented independently, or two or more of them may be implemented in combination with each other. [Explanation of symbols]

[0104] 1000 Index Module 2000 Process Module 3000 Fluid Supply Module 2300 1st process chamber 2400 2nd process chamber 2410 Chamber Body 2411 Processing Space 2420 Chamber Heater 2430 Substrate Support Unit 2440 Fluid Supply Unit 2441 Fluid Supply Line 2446 Filter 2447a, 2447b, 2447c Supply line open / close valve 2448 Supply Line Heater 2450 Supply Line Heating Unit 2451 Fluid Injection Line 2452 Injection Line Heater 2453 Injection line opening and closing valve 2460 Fluid Recovery Unit 2470 Vent Unit 2480 Drain Unit

Claims

1. a chamber body providing a processing space for processing a substrate with a processing fluid in a supercritical state; a substrate supporting unit for supporting the substrate in the processing space; a fluid supply unit including a fluid supply line that supplies the processing fluid to the processing space; a supply line heating unit that injects a heated fluid into the fluid supply line and flows the heated fluid along the fluid supply line to heat the fluid supply line with the heated fluid flowing along the fluid supply line; the fluid supply line includes a main line, a first branch line branching from the main line to supply the processing fluid to an upper portion of the processing space, and a second branch line branching from the main line to supply the processing fluid to a lower portion of the processing space, The supply line heating unit comprises: The substrate processing apparatus includes a fluid injection line for injecting the heating fluid into the main one of the fluid supply lines.

2. The substrate processing apparatus according to claim 1 , wherein the heating fluid includes an inert gas.

3. 2. The substrate processing apparatus according to claim 1, wherein the heating fluid contains an inert gas having a thermal conductivity higher than that of the processing fluid.

4. the supply line heating unit is operated in an idle mode; 2 . The substrate processing apparatus according to claim 1 , wherein the fluid supply unit opens the fluid supply line so that the heated fluid, the temperature of which has been increased in the idle mode, can be supplied to the processing space along the fluid supply line.

5. The substrate processing apparatus according to claim 4 , further comprising a fluid recovery unit that recovers the heating fluid that has flowed into the processing space and returns it to the supply line heating unit.

6. The supply line heating unit comprises: 2 . The substrate processing apparatus of claim 1 , further comprising an injection line heater for heating the heating fluid flowing along the fluid injection line to increase a temperature of the heating fluid.

7. 7. The substrate processing apparatus of claim 6, wherein the fluid supply unit further comprises a supply line heater for heating the processing fluid flowing along the fluid supply line.

8. 8. The substrate processing apparatus of claim 7, wherein the supply line heater is installed downstream of a portion of the fluid supply line to which the fluid injection line is connected.

9. 9. The substrate processing apparatus of claim 8, wherein the fluid supply unit further comprises a filter disposed downstream of a portion of the fluid supply line to which the fluid injection line is connected.

10. 8. The substrate processing apparatus according to claim 7, wherein the supply line heater heats the processing fluid to a critical temperature or higher.

11. a chamber body providing a processing space for processing a substrate with a processing fluid in a supercritical state; a chamber heater for heating the processing space to a critical temperature or higher of the processing fluid; a substrate supporting unit for supporting the substrate in the processing space; a fluid supply unit including a fluid supply line for supplying the processing fluid to the processing space, the fluid supply line having a filter and a supply line opening / closing valve provided on each of the fluid supply lines; a vent unit coupled to the processing space; a supply line heating unit including a fluid injection line for injecting a heated fluid into the fluid supply line, the supply line heating unit having an injection line heater and an injection line opening / closing valve respectively provided on the fluid injection line, the supply line heating unit being connected to the fluid injection line on the upstream side of the filter in the fluid supply line; the supply line heating unit operates in an idle mode to inject the heated fluid heated by the injection line heater into the fluid supply line and flow along the fluid supply line, thereby heating the fluid supply line with the heated heated fluid flowing along the fluid supply line; the fluid supply unit operates in an idle mode with the supply line open / close valve open so that the heated heated fluid can be supplied to the processing space along the fluid supply line; the fluid supply line includes a main line, a first branch line branching from the main line to supply the processing fluid to an upper portion of the processing space, and a second branch line branching from the main line to supply the processing fluid to a lower portion of the processing space, The fluid injection line is connected to the main line, and the heated fluid is injected into the main line and flows along the main line, the first branch line, and the second branch line.

12. 12. The substrate processing apparatus of claim 11, wherein the fluid supply unit further comprises a supply line heater for heating the processing fluid flowing along the fluid supply line to a critical temperature or higher.

13. the filter is disposed in the main line, and the supply line opening / closing valves are disposed in the main line, the first branch line, and the second branch line, respectively; 13. The substrate processing apparatus of claim 12, wherein the supply line heater is provided between the filter and a portion of the main line to which the fluid injection line is connected, and heats the heating fluid in the idle mode.

14. the substrate processing apparatus further includes a fluid recovery unit configured to recover the heating fluid, the temperature of which has been increased in the idle mode, from the processing space to the supply line heating unit; 12. The substrate processing apparatus of claim 11, wherein the fluid recovery unit includes a fluid recovery line that connects an upstream side of the fluid injection line with respect to the injection line heater to a vent line of the vent unit.

15. 1. A method for treating a substrate with a processing fluid in a supercritical state in a processing space of a chamber body, comprising: a first step of injecting a heated fluid into a fluid supply line connected to the processing space in an idle mode and flowing the heated fluid along the fluid supply line, thereby heating the fluid supply line with the heated heated fluid flowing along the fluid supply line; a second step of supplying the processing fluid through the heated fluid supply line to the processing space to pressurize the processing space and perform a supercritical process mode for processing the substrate; the fluid supply line includes a main line, a first branch line branching from the main line to supply the processing fluid to an upper portion of the processing space, and a second branch line branching from the main line to supply the processing fluid to a lower portion of the processing space, The substrate processing method includes injecting the heating fluid into the main line, and causing the heated heating fluid to flow along the main line, the first branch line, and the second branch line in the first step.

16. The first step includes supplying the heated fluid to the processing space by flowing the heated fluid along the fluid supply line while the fluid supply line is open, 16. The substrate processing method of claim 15, wherein the second step initially supplies the processing fluid to the processing space from below the substrate, and when the processing space reaches a threshold state, supplies the processing fluid to the processing space from above the substrate.

17. 16. The substrate processing method according to claim 15, wherein the first step comprises flowing the heated fluid along the fluid supply line while the fluid supply line is open, thereby supplying the heated fluid to the processing space.

18. 20. The substrate processing method according to claim 17, wherein the first step determines an elevated temperature of the heating fluid based on at least one of a temperature of the fluid supply line and a temperature of the processing space.

Images