Substrate Processing Equipment

The substrate processing apparatus enhances temperature uniformity by using deflection sections and Fresnel lenses to direct heating light, addressing non-uniformity issues in film formation processes.

JP7619734B2Active Publication Date: 2025-01-22TOKYO ELECTRON LTD
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Patent Information

Application Number
JP2021041636
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-03-15
Publication Date
2025-01-22
Estimated Expiration
2041-03-15

AI Technical Summary

Technical Problem

Existing substrate processing apparatuses face challenges in achieving uniform temperature distribution across the substrate surface during film formation processes.

Method used

The apparatus incorporates a rotating table with a heating element that directs heating light towards a deflection section, which reflects or condenses the light to selectively raise the temperature at specific regions, such as the rotation axis, using reflectors or Fresnel lenses to enhance temperature uniformity.

Benefits of technology

This configuration improves temperature uniformity across the substrate surface, ensuring consistent film formation quality by selectively adjusting temperatures at critical points.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

To provide a technique capable of improving temperature uniformity within a substrate surface.SOLUTION: A substrate processing apparatus according to the present disclosure includes a rotary table provided in a processing container, a mounting table provided for mounting a substrate on the rotary table and revolving as the rotary table rotates, a heating element that heats the substrate mounted on the mounting table, a rotation axis provided to rotate together with the rotary table and rotatably supporting the mounting table, and a deflection unit that deflects the heating light emitted from the heating element toward the rotation axis.SELECTED DRAWING: Figure 1
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Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] There is known an apparatus that forms various films on the wafers by rotating a turntable on which multiple wafers are placed, causing each wafer to revolve and repeatedly passing through a processing gas supply area arranged along the radial direction of the turntable (see, for example, Patent Document 1). In this apparatus, while the wafers revolve on the turntable, the wafer placement table is rotated so that the wafers rotate on their own axis, thereby improving the uniformity of the film in the circumferential direction of the wafers. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-119921 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can improve temperature uniformity within a substrate surface. [Means for solving the problem]

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a turntable provided within a processing chamber, a mounting stage provided for mounting a substrate on the turntable and revolving with the rotation of the turntable, a heating element for heating the substrate mounted on the mounting stage, a rotation shaft provided to rotate together with the turntable and supporting the mounting stage so as to be freely rotatable, and a deflection unit for deflecting heating light emitted from the heating element toward the rotation shaft. The mounting table has a rotation center at a position separated from the rotation center of the rotary table, the heating element is provided along a circumferential direction of the rotary table, and the deflection portion extends in the circumferential direction of the rotary table along the heating element. . Effect of the Invention

[0006] According to the present disclosure, it is possible to improve the temperature uniformity within the substrate surface. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a cross-sectional view showing a configuration example of a film forming apparatus according to an embodiment. [Diagram 2] FIG. 2 is a plan view showing the internal structure of a vacuum chamber of the film forming apparatus shown in FIG. [Diagram 3] FIG. 2 is a perspective view showing the configuration of a rotation table and a mounting table of the film forming apparatus of FIG. [Figure 4] FIG. 2 is a cross-sectional view showing the configuration inside the storage box of the film forming apparatus of FIG. [Diagram 5] FIG. 13 is a diagram showing an example of a mechanism for fixing the mounting table. [Figure 6] FIG. 1 shows an example of a mechanism for fixing a rotary table. [Figure 7] FIG. 1 is a plan view showing a first configuration example of a deflection unit; [Figure 8] FIG. 1 is a cross-sectional view showing a first configuration example of a deflection unit; [Figure 9] A diagram for explaining the reflector installation structure [Figure 10] FIG. 1 is a diagram for explaining a divided structure of a reflector. [Figure 11] Diagram to explain the cross-sectional shape of the reflector (1) [Figure 12] Diagram to explain the cross-sectional shape of the reflector (2) [Figure 13] Diagram to explain the cross-sectional shape of the reflector (3) [Figure 14] Diagram to explain the cross-sectional shape of the reflector (4) [Figure 15] Diagram to explain the cross-sectional shape of the reflector (5) [Figure 16] Diagram (1) to explain the directionality of the heating light emitted from a heating element. [Figure 17] Diagram (2) to explain the directionality of the heating light emitted from a heating element. [Figure 18] Diagram (3) to explain the directionality of the heating light emitted from a heating element. [Figure 19] FIG. 4 is a cross-sectional view showing a second configuration example of the deflection unit; [Figure 20] FIG. 11 is a cross-sectional view showing a third configuration example of the deflection unit; [Figure 21] FIG. 11 is a cross-sectional view showing a fourth configuration example of the deflection unit; [Figure 22] FIG. 13 is a diagram showing the measurement results of the in-plane distribution of the substrate temperature in the embodiment. [Figure 23] Normalized measurement results of Figure 22 [Figure 24] FIG. 13 is a diagram showing the measurement results of the in-plane distribution of the substrate temperature in a comparative example. [Diagram 25] Normalized measurement results from Figure 24 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all of the accompanying drawings, the same or corresponding members or parts are designated by the same or corresponding reference numerals, and duplicated descriptions will be omitted.

[0009] [Substrate Processing Apparatus] 1 to 4, a film forming apparatus 300 for forming a film on a substrate will be described as an example of the substrate processing apparatus.

[0010] Fig. 1 is a cross-sectional view showing an example of the configuration of a film forming apparatus of an embodiment. Fig. 2 is a plan view showing the configuration inside a vacuum container of the film forming apparatus of Fig. 1. For convenience of explanation, a top plate is omitted in Fig. 2. Fig. 3 is a perspective view showing the configuration of a rotation table and a mounting table of the film forming apparatus of Fig. 1. Fig. 4 is a cross-sectional view showing the configuration inside a storage box of the film forming apparatus of Fig. 1.

[0011] The film forming apparatus 300 includes a processing section 310 , a rotation driver 320 , and a control section 390 .

[0012] The processing section 310 is configured to perform a film formation process for forming a film on a substrate, and includes a vacuum vessel 311, a gas inlet 312, a gas exhaust port 313, a transfer port 314, a heating section 315, and a cooling section 316.

[0013] The vacuum vessel 311 is a processing vessel capable of reducing the pressure inside. The vacuum vessel 311 has a flat shape having a substantially circular planar shape, and accommodates a plurality of substrates W inside. The substrates W may be, for example, semiconductor wafers. The vacuum vessel 311 includes a main body 311a, a top plate 311b, a sidewall 311c, and a bottom plate 311d (FIG. 1). The main body 311a has a cylindrical shape. The top plate 311b is airtightly and detachably disposed on the upper surface of the main body 311a via a seal portion 311e. The sidewall 311c is connected to the lower surface of the main body 311a and has a cylindrical shape. The bottom plate 311d is airtightly disposed on the bottom surface of the sidewall 311c.

[0014] The gas inlet 312 includes a source gas nozzle 312a, a reaction gas nozzle 312b, and separation gas nozzles 312c and 312d (FIG. 2). The source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d are arranged above the turntable 321 at intervals in the circumferential direction of the vacuum vessel 311 (the direction indicated by the arrow A in FIG. 2). In the illustrated example, the separation gas nozzle 312c, the source gas nozzle 312a, the separation gas nozzle 312d, and the reaction gas nozzle 312b are arranged in this order clockwise (the rotation direction of the turntable 321) from the transfer port 314. Gas inlet ports 312a1, 312b1, 312c1, and 312d1 (FIG. 2), which are the base ends of the source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d, are fixed to the outer wall of the main body 311a. The source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c, 312d are introduced into the vacuum vessel 311 from the outer wall of the vacuum vessel 311 and attached so as to extend horizontally along the radial direction of the main body 311a relative to the rotary table 321. The source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c, 312d are made of, for example, quartz.

[0015] The source gas nozzle 312a is connected to a source gas supply source (not shown) via piping and a flow rate controller (not shown). For example, a silicon-containing gas or a metal-containing gas can be used as the source gas. The source gas nozzle 312a has a plurality of discharge holes (not shown) that open toward the rotary table 321 and are arranged at intervals along the length of the source gas nozzle 312a. The region below the source gas nozzle 312a becomes a source gas adsorption region P1 for adsorbing the source gas onto the substrate W.

[0016] The reaction gas nozzle 312b is connected to a reaction gas supply source (not shown) via piping and a flow rate controller (not shown). For example, an oxidizing gas or a nitriding gas can be used as the reaction gas. The reaction gas nozzle 312b has a plurality of discharge holes (not shown) that open toward the turntable 321 and are arranged at intervals along the length of the reaction gas nozzle 312b. The region below the reaction gas nozzle 312b becomes a reaction gas supply region P2 that oxidizes or nitrides the source gas adsorbed on the substrate W in the source gas adsorption region P1.

[0017] Both of the separation gas nozzles 312c and 312d are connected to a separation gas supply source (not shown) via piping and a flow control valve (not shown). As the separation gas, for example, an inert gas such as argon (Ar) gas or nitrogen (N2) gas can be used. In the separation gas nozzles 312c and 312d, a plurality of discharge holes (not shown) opening toward the rotary table 321 are arranged at intervals along the length direction of the separation gas nozzles 312c and 312d.

[0018] 2, two convex portions 317 are provided in the vacuum vessel 311. The convex portions 317, together with the separation gas nozzles 312c and 312d, constitute the separation region D, and are attached to the rear surface of the top plate 311b so as to protrude toward the rotary table 321. The convex portions 317 have a sectorial planar shape with an apex cut into an arc, with the inner arc connected to the protruding portion 318 and the outer arc disposed along the inner wall of the main body 311a of the vacuum vessel 311.

[0019] The gas exhaust port 313 includes a first exhaust port 313a and a second exhaust port 313b (FIG. 2). The first exhaust port 313a is formed in the bottom of the first exhaust region E1 that communicates with the source gas adsorption region P1. The second exhaust port 313b is formed in the bottom of the second exhaust region E2 that communicates with the reaction gas supply region P2. The first exhaust port 313a and the second exhaust port 313b are connected to an exhaust device (not shown) via exhaust piping (not shown).

[0020] The transfer port 314 is provided in a side wall of the vacuum vessel 311 (FIG. 2). Through the transfer port 314, the substrate W is transferred between a rotation table 321 in the vacuum vessel 311 and a transfer arm 314a outside the vacuum vessel 311. The transfer port 314 is opened and closed by a gate valve (not shown).

[0021] The heating unit 315 includes a fixed shaft 315a, a heater support unit 315b, and a heater 315c (FIG. 1).

[0022] Fixed shaft 315a has a cylindrical shape with its central axis at the center of vacuum vessel 311. Fixed shaft 315a is provided inside rotating shaft 323, penetrating bottom plate 311d of vacuum vessel 311. Seal portion 315d is provided between the outer wall of fixed shaft 315a and the inner wall of rotating shaft 323. This allows rotating shaft 323 to rotate relative to fixed shaft 315a while maintaining the airtight state inside vacuum vessel 311. Seal portion 315d includes, for example, a magnetic fluid seal.

[0023] The heater support portion 315b is fixed to the upper portion of the fixed shaft 315a and has a disk shape, and supports the heater 315c.

[0024] The heater 315c is provided on the upper surface of the heater support portion 315b. The heater 315c may be provided on the main body 311a in addition to on the upper surface of the heater support portion 315b. The heater 315c includes a heating element that generates heat when power is supplied from a power source (not shown), and heats the substrate W with heating light emitted from the heating element. A part of the heating light emitted from the heating element is deflected by a deflection portion toward the rotation axis 321b. The deflection portion and the rotation axis 321b will be described later.

[0025] The cooling section 316 includes fluid flow paths 316a1-316a4, chiller units 316b1-316b4, inlet pipes 316c1-316c4, and outlet pipes 316d1-316d4. The fluid flow paths 316a1, 316a2, 316a3, and 316a4 are formed inside the main body 311a, the top plate 311b, the bottom plate 311d, and the heater support section 315b, respectively. The chiller units 316b1-316b4 output a temperature control fluid. The temperature control fluid output from the chiller units 316b1-316b4 flows and circulates through the inlet pipes 316c1-316c4, the fluid flow paths 316a1-316a4, and the outlet pipes 316d1-316d4 in this order. This adjusts the temperatures of the main body 311a, the top plate 311b, the bottom plate 311d, and the heater support portion 315b. As the temperature adjustment fluid, for example, water or a fluorine-based fluid such as Galden (registered trademark) can be used.

[0026] The rotary drive device 320 includes a rotary table 321 , a storage box 322 , a rotary shaft 323 , and a revolution motor 324 .

[0027] The rotating table 321 is provided in the vacuum vessel 311 and has a rotation center at the center of the vacuum vessel 311. The rotating table 321 has, for example, a disk shape and is made of quartz. A plurality of (for example, five) mounting tables 321a are provided on the upper surface of the rotating table 321 along the rotation direction (circumferential direction). The rotating table 321 is connected to the storage box 322 via a connection part 321d.

[0028] Each mounting table 321a has a disk shape slightly larger than the substrate W, and is made of, for example, quartz. The substrate W is mounted on each mounting table 321a. The substrate W may be, for example, a semiconductor wafer. Each mounting table 321a is connected to a rotation motor 321c via a rotation shaft 321b, and is configured to be rotatable with respect to the turntable 321.

[0029] The rotation shaft 321b connects the lower surface of the mounting table 321a to a rotation motor 321c housed in the storage box 322, and transmits the power of the rotation motor 321c to the mounting table 321a. The rotation shaft 321b is configured to be rotatable about the center of the mounting table 321a. The rotation shaft 321b is provided penetrating the ceiling 322b of the storage box 322 and the turntable 321. A seal portion 326c is provided in the through hole of the ceiling portion 322b of the storage box 322, and the inside of the storage box 322 is kept airtight. The seal portion 326c includes, for example, a magnetic fluid seal.

[0030] The rotation motor 321c rotates the mounting table 321a relative to the turntable 321 via the rotation shaft 321b, thereby rotating the substrate. The rotation motor 321c may be, for example, a servo motor.

[0031] The connection portion 321d connects, for example, the lower surface of the turntable 321 and the upper surface of the storage box 322. A plurality of connection portions 321d are provided along the circumferential direction of the turntable 321, for example.

[0032] The detailed structures of the rotary table 321, the mounting base 321a, the rotation shaft 321b, and the connection portion 321d will be described later.

[0033] The storage box 322 is provided below the turntable 321 in the vacuum vessel 311. The storage box 322 is connected to the turntable 321 via a connection part 321d, and configured to be rotatable integrally with the turntable 321. The storage box 322 may be configured to be movable up and down within the vacuum vessel 311 by an elevation mechanism (not shown). The storage box 322 has a main body part 322a and a ceiling part 322b.

[0034] The main body portion 322a is formed in a concave shape in cross section, and is formed in a ring shape along the rotation direction of the turntable 321.

[0035] The ceiling portion 322b is provided on the upper surface of the main body portion 322a so as to cover an opening of the main body portion 322a which is formed in a concave shape in cross section. As a result, the main body portion 322a and the ceiling portion 322b form a container portion 322c which is isolated from the inside of the vacuum vessel 311.

[0036] The accommodation section 322c is formed in a rectangular shape in cross section, and is formed in a ring shape along the rotation direction of the turntable 321. The accommodation section 322c accommodates a rotation motor 321c. The main body section 322a is formed with a communication passage 322d that communicates the accommodation section 322c with the outside of the film forming apparatus 300. As a result, air is introduced into the accommodation section 322c from the outside of the film forming apparatus 300, and the inside of the accommodation section 322c is cooled and maintained at atmospheric pressure.

[0037] The rotating shaft 323 is fixed to the lower part of the containing box 322. The rotating shaft 323 is provided penetrating the bottom plate 311d of the vacuum vessel 311. The rotating shaft 323 transmits the power of the revolution motor 324 to the rotating table 321 and the containing box 322, and rotates the rotating table 321 and the containing box 322 together. A seal portion 311f is provided in the through hole of the bottom plate 311d of the vacuum vessel 311, and the inside of the vacuum vessel 311 is maintained in an airtight state. The seal portion 311f includes, for example, a magnetic fluid seal.

[0038] A through hole 323a is formed inside the rotating shaft 323. The through hole 323a is connected to the communication passage 322d of the storage box 322, and functions as a fluid flow path for introducing air into the storage box 322. The through hole 323a also functions as a wiring duct for introducing power lines and signal lines for driving the rotation motor 321c into the storage box 322. The through holes 323a are provided in the same number as the rotation motors 321c, for example.

[0039] The control unit 390 controls each part of the film forming apparatus 300. The control unit 390 may be, for example, a computer. In addition, a computer program for performing the operation of each part of the film forming apparatus 300 is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0040] [Fixing mechanism for mounting table] An example of a mechanism for fixing the mounting table 321a in the above-mentioned film forming apparatus 300 will be described with reference to Fig. 5. Fig. 5 is a diagram showing an example of the mechanism for fixing the mounting table. Fig. 5(a) is a cross-sectional view showing the positional relationship between the mounting table and the clamping body, and Fig. 5(b) is an enlarged view of the clamping body in Fig. 5(a).

[0041] First, a configuration example of the mounting table 321a will be described. In the following, the turntable 321 and the mounting table 321a will be described as a turntable 400 and a mounting table 410, respectively.

[0042] The mounting table 410 has a rotation center at a position separated from the rotation center of the turntable 400, and is configured to be rotatable with respect to the turntable 400. Hereinafter, the rotation center of the turntable 400 is also referred to as the revolution center, and the rotation center of the mounting table 410 is also referred to as the spin center. The revolution center and the spin center are separated by, for example, 300 to 400 mm. Therefore, when the turntable 400 rotates, a centrifugal force acts on the mounting table 410. In particular, when the turntable 400 rotates at high speed (for example, 200 rpm or higher), a large centrifugal force acts on the mounting table 410.

[0043] The mounting table 410 is made of a material having high thermal conductivity, such as Al2O3, AlN, SiC, etc. The mounting table 410 includes a mounting portion 411, an opening 412, a thick portion 413, and a flange portion 414.

[0044] The mounting portion 411 is a recess formed in the upper surface of the mounting table 410. The mounting portion 411 has an outer diameter slightly larger than that of the substrate W, and has approximately the same depth as the substrate W. On the mounting portion 411, the substrate W is placed.

[0045] The opening 412 is formed at the rotation center of the mounting table 410. In other words, the opening 412 is formed at a position spaced apart from the rotation center of the turntable 400. The opening 412 has, for example, a circular shape.

[0046] The thick portion 413 is a portion that extends downward from the lower surface of the mounting table 410 around the opening 412 of the mounting table 410, and has a circular ring shape.

[0047] Flange portion 414 is a portion that protrudes from the inner wall of thick portion 413 toward the center of opening 412, and has a circular ring shape. The upper surface of flange portion 414 is located lower than the upper surface of mounting portion 411 of mounting table 410.

[0048] The fixing mechanism 500 includes a first clamping body 510, a second clamping body 520, a pressing member 530, a cover body 540, and a shaft body 550. The first clamping body 510, the second clamping body 520, the pressing member 530, the cover body 540, and the shaft body 550 function as the above-mentioned rotation shaft 321b.

[0049] The first clamping body 510 has a cylindrical shape with a bottom, and the upper end of the cylindrical shape is configured to contact the lower surface of the flange portion 414 of the mounting table 410. A first through hole 512 is formed at the bottom of the first clamping body 510, through which the insertion portion 551 of the shaft body 550 can be inserted. The first through hole 512 has an inner diameter slightly (for example, 0.1 to 5.0 mm) larger than the outer diameter of the insertion portion 551. The first clamping body 510 is made of a material that has a heat-resistant temperature higher than the temperature (for example, 600° C.) of the film formation process performed in the film formation apparatus 300 and has a lower thermal conductivity than the mounting table 410. For example, when the mounting table 410 is made of Al2O3, AlN, or SiC, the first clamping body 510 is made of, for example, quartz. In addition, the first clamping body 510 is preferably made of a material that has a thermal conductivity 10 times lower than that of the mounting table 410.

[0050] The second clamping body 520 is provided inside the first clamping body 510 with a gap G11 between it and the inner wall of the first clamping body 510. The gap G11 may be, for example, 0.1 to 5.0 mm. The second clamping body 520 has a bottomed cylindrical shape with an outer diameter smaller than the inner diameter of the first clamping body 510. The second clamping body 520 includes a contact portion 521. The contact portion 521 has an annular shape extending outward from the outer wall of the upper end of the second clamping body 520, and contacts the upper surface of the flange portion 414 formed on the mounting table 410. A second through hole 522 is formed in the bottom of the second clamping body 520, through which the insertion portion 551 of the shaft body 550 can be inserted. The second through hole 522 has an inner diameter slightly larger (for example, 0.1 to 5.0 mm) than the outer diameter of the insertion portion 551. The second holding body 520 is made of a material that has a higher heat resistance than the temperature (e.g., 600° C.) of the film formation process performed in the film formation apparatus 300 and has a lower thermal conductivity than the mounting table 410. For example, when the mounting table 410 is made of Al2O3, AlN, or SiC, the second holding body 520 is made of, for example, quartz. The second holding body 520 is preferably made of a material that has a thermal conductivity that is 10 times or more lower than that of the mounting table 410. From the viewpoint of not causing a thermal expansion difference, the second holding body 520 is preferably made of the same material as the first holding body 510.

[0051] In this way, the upper end of the first clamping body 510 contacts the lower surface of the flange portion 414, and the contact portion 521 of the second clamping body 520 contacts the upper surface of the flange portion 414, so that the flange portion 414 is clamped between the first clamping body 510 and the second clamping body 520.

[0052] The pressing member 530 presses the first clamping body 510 and the second clamping body 520 in a direction to bring them closer to each other. The pressing member 530 is disposed, for example, on the bottom surface inside the second clamping body 520, and presses the bottom of the second clamping body 520 toward the bottom of the first clamping body 510. As a result, the flange portion 414 is sandwiched between the upper end of the first clamping body 510 and the contact portion 521 of the second clamping body 520, and is fixed by the pressing force of the pressing member 530. As a result, the placement table 410, the second clamping body 520, etc. are prevented from falling toward the outer periphery of the turntable 400 due to the centrifugal force generated by the rotation of the turntable 400. The pressing member 530 includes, for example, a disc spring.

[0053] The lid 540 has a cylindrical shape with an outer diameter substantially the same as the inner diameter of the second holding body 520, and is inserted into the second holding body 520 to close the opening at the top of the second holding body 520. This prevents the pressing member 530 from being exposed to the source gas or the reaction gas. Therefore, even if the pressing member 530 is made of a metal material, the corrosion of the pressing member 530 can be prevented. The lid 540 is preferably made of a material that has a higher heat resistance than the temperature (e.g., 600° C.) of the film formation process performed in the film formation apparatus 300 and has a higher heat absorption rate than the mounting table 410. For example, when the mounting table 410 is made of Al2O3, the lid 540 is preferably made of, for example, SiC or carbon (C).

[0054] The shaft body 550 is formed of, for example, a metal material, and includes an insertion portion 551 and a penetration portion 552 .

[0055] The insertion portion 551 is an upper portion of the shaft body 550. The insertion portion 551 passes through the first through hole 512 and the second through hole 522, and the upper end is fixed by the pressing member 530 inside the second clamping body 520. Since the outer diameter of the insertion portion 551 is slightly larger than the inner diameter of the first through hole 512, a gap G12 is formed between the outer wall of the insertion portion 551 and the inner wall of the first through hole 512. In addition, since the outer diameter of the insertion portion 551 is slightly larger than the inner diameter of the second through hole 522, a gap G13 is formed between the outer wall of the insertion portion 551 and the inner wall of the second through hole 522.

[0056] The through portion 552 is a lower portion of the shaft body 550. The through portion 552 is provided by penetrating the ceiling portion 322b of the storage box 322. The lower end of the through portion 552 is located inside the storage box 322. The through portion 552 transmits the power of the rotation motor 321c (FIG. 4) arranged in the storage box 322 to the mounting table 410 via the first clamping body 510 and the second clamping body 520. In other words, when the through portion 552 rotates due to the power of the rotation motor 321c, the first clamping body 510, the second clamping body 520, and the mounting table 410 rotate. The insertion portion 551 and the through portion 552 may be formed as separate bodies.

[0057] According to the fixing mechanism 500 described above, the mounting table 410 is fixed by clamping the mounting table 410 between the first clamping body 510 and the second clamping body 520 and pressing the first clamping body 510 and the second clamping body 520 in a direction to bring them closer to each other using the pressing member 530. This makes it possible to absorb the thermal expansion difference while the center of rotation is exposed. As a result, damage to the mounting table 410, the fixing mechanism 500, etc. caused by thermal stress can be suppressed.

[0058] Moreover, according to the fixing mechanism 500, gaps G12 and G13 are formed between the insertion portion 551 and the first through-hole 512 and between the insertion portion 551 and the first and second clamping bodies 510 and 520. Therefore, even if a thermal expansion difference occurs between the insertion portion 551 and the first and second clamping bodies 510 and 520, it is possible to suppress the generation of stress in the insertion portion 551, the first clamping body 510, the second clamping body 520, and the like. As a result, it is possible to suppress damage to the first clamping body 510, the second clamping body 520, the mounting table 410, and the like.

[0059] Moreover, according to the fixing mechanism 500, the shaft body 550 is covered by the first clamping body 510 and the second clamping body 520, and is fixed by the pressing force of the pressing member 530 arranged on the bottom surface inside the second clamping body 520. This prevents the shaft body 550 from being exposed to the source gas and the reaction gas. As a result, even if the shaft body 550 is made of a material that is corrosive to the source gas and the reaction gas, corrosion of the shaft body 550 can be prevented.

[0060] Moreover, according to the fixing mechanism 500, the shaft body 550 is provided penetrating the ceiling portion 322b of the storage box 322, and the lower end of the shaft body 550 located inside the storage box 322 is a portion that is connected to the rotation motor 321c. This allows the rotation motor 321c to be disposed inside the storage box 322. As a result, the temperature rise of the rotation motor 321c can be suppressed.

[0061] [Rotary table fixing mechanism] An example of a mechanism for fixing the rotary table 321 in the above-mentioned film forming apparatus 300 will be described with reference to Fig. 6. Fig. 6 is a diagram showing an example of the mechanism for fixing the rotary table.

[0062] First, a configuration example of the turntable 321 will be described. In the following, the turntable 321 will be described as a turntable 400.

[0063] The rotary table 400 is rotatably provided within the vacuum vessel 311. The rotary table 400 includes an opening 402, a thick portion 403, and a flange portion 404.

[0064] A plurality of openings 402 are formed along the circumferential direction of the turntable 400 at positions spaced apart from the center of rotation of the turntable 400. The openings 402 have, for example, a circular shape.

[0065] The thick portion 403 is a portion that extends downward from the lower surface of the turntable 400 around the opening 402 of the turntable 400, and has an annular shape.

[0066] Flange portion 404 is a portion that protrudes from the inner wall of thick portion 403 toward the center of opening 402, and has an annular shape. The upper surface of flange portion 404 is located lower than the upper surface of turntable 400.

[0067] The fixing mechanism 600 includes a first clamping body 610, a second clamping body 620, a pressing member 630, a cover body 640, and a shaft body 650. The first clamping body 610, the second clamping body 620, the pressing member 630, the cover body 640, and the shaft body 650 function as the above-mentioned connecting portion 321d.

[0068] The first clamping body 610 has a cylindrical shape with a bottom, and the upper end of the cylindrical shape is configured to contact the lower surface of the flange portion 404 of the turntable 400. A first through hole 612 through which the insertion portion 651 of the shaft body 650 can be inserted is formed in the bottom of the first clamping body 610. The first through hole 612 has an inner diameter slightly (for example, 0.1 to 5.0 mm) larger than the outer diameter of the insertion portion 651. The first clamping body 610 is made of a material, such as quartz or ceramics, that has a heat-resistant temperature higher than the temperature (for example, 600° C.) of the film formation process performed in the film formation apparatus 300.

[0069] The second clamping body 620 is provided inside the first clamping body 610 with a gap G21 between it and the inner wall of the first clamping body 610. The gap G21 may be, for example, 0.1 to 5.0 mm. The second clamping body 620 has a bottomed cylindrical shape with an outer diameter smaller than the inner diameter of the first clamping body 610. The second clamping body 620 includes a contact portion 621. The contact portion 621 has an annular shape extending outward from the outer wall of the upper end of the second clamping body 620, and contacts the upper surface of the flange portion 404 formed on the mounting table 410. A second through hole 622 is formed in the bottom of the second clamping body 620, through which the insertion portion 651 of the shaft body 650 can be inserted. The second through hole 622 has an inner diameter slightly larger (for example, 0.1 to 5.0 mm) than the outer diameter of the insertion portion 651. The second sandwiching body 620 is made of a material, such as quartz or ceramics, that has a higher heat resistance than the temperature (e.g., 600° C.) of the film formation process performed in the film formation apparatus 300. The second sandwiching body 620 is preferably made of the same material as the first sandwiching body 610 from the viewpoint of preventing a difference in thermal expansion.

[0070] In this way, the upper end of the first clamping body 610 contacts the lower surface of the flange portion 404, and the contact portion 621 of the second clamping body 620 contacts the upper surface of the flange portion 404, so that the flange portion 404 is clamped between the first clamping body 610 and the second clamping body 620.

[0071] The pressing member 630 presses the first clamping body 610 and the second clamping body 620 in a direction to bring them closer to each other. The pressing member 630 is disposed, for example, on the bottom surface inside the second clamping body 620, and presses the bottom of the second clamping body 620 toward the bottom of the first clamping body 610. As a result, the flange portion 404 is sandwiched between the upper end of the first clamping body 610 and the contact portion 621 of the second clamping body 620, and is fixed by the pressing force of the pressing member 630. The pressing member 630 includes, for example, a disc spring.

[0072] The lid 640 has a cylindrical shape with an outer diameter substantially the same as the inner diameter of the second holding body 620, and closes the opening at the top of the second holding body 620 by being inserted inside the second holding body 620. This prevents the pressing member 630 from being exposed to the source gas and the reaction gas. Therefore, even if the pressing member 630 is made of a metal material, corrosion of the pressing member 630 can be prevented. The lid 640 is made of a material, such as quartz or ceramics, that has a higher heat resistance than the temperature (e.g., 600° C.) of the film formation process performed in the film formation apparatus 300.

[0073] The shaft body 650 is formed of, for example, a metal material, and includes an insertion portion 651 and a support portion 652 .

[0074] The insertion portion 651 is an upper portion of the shaft body 650. The insertion portion 651 passes through the first through hole 612 and the second through hole 622, and the upper end is fixed by the pressing member 630 inside the second clamping body 620. Since the outer diameter of the insertion portion 651 is slightly larger than the inner diameter of the first through hole 612, a gap G22 is formed between the outer wall of the insertion portion 651 and the inner wall of the first through hole 612. In addition, since the outer diameter of the insertion portion 651 is slightly larger than the inner diameter of the second through hole 622, a gap G23 is formed between the outer wall of the insertion portion 651 and the inner wall of the second through hole 622.

[0075] The support portion 652 is a lower portion of the shaft body 650. The lower end of the support portion 652 is fixed to the upper surface of the ceiling portion 322b of the storage box 322. Note that the insertion portion 651 and the support portion 652 may be formed as separate bodies.

[0076] According to the fixing mechanism 600 described above, the turntable 400 is fixed by sandwiching the turntable 400 between the first clamping body 610 and the second clamping body 620 and pressing the first clamping body 610 and the second clamping body 620 in a direction to bring them closer to each other using the pressing member 630. This makes it possible to absorb the thermal expansion difference while keeping the center of revolution out of the way. As a result, damage to the turntable 400, the fixing mechanism 600, and the like caused by thermal stress can be suppressed.

[0077] Moreover, according to the fixing mechanism 600, gaps G22 and G23 are formed between the insertion portion 651 and the first through-hole 612 and between the insertion portion 651 and the first and second clamping bodies 610 and 620. Therefore, even if a thermal expansion difference occurs between the insertion portion 651 and the first and second clamping bodies 610 and 620, it is possible to suppress the generation of stress in the insertion portion 651, the first clamping body 610, the second clamping body 620, and the like. As a result, it is possible to suppress damage to the first clamping body 610, the second clamping body 620, the rotating table 400, and the like.

[0078] Moreover, according to the fixing mechanism 600, the shaft body 650 is covered by the first clamping body 610 and the second clamping body 620, and is fixed by the pressing force of the pressing member 630 arranged on the bottom surface inside the second clamping body 620. This prevents the shaft body 650 from being exposed to the source gas or the reaction gas. As a result, even if the shaft body 650 is made of a material that is corrosive to the source gas or the reaction gas, corrosion of the shaft body 650 can be prevented.

[0079] [Deflection part] (First configuration example) 7 and 8, a first configuration example of the deflection unit included in the above-mentioned film forming apparatus 300 will be described. The deflection unit of the first configuration example includes a reflector 20 that reflects heating light emitted from a heating element of the heater 315c toward the rotation axis 321b. Hereinafter, the heater 315c will be described as a heater 10.

[0080] The heater 10 includes an inner heater 11, a middle heater 12, and an outer heater 13. The inner heater 11, the middle heater 12, and the outer heater 13 are configured to be independently controllable. However, the heater 10 may include only one heater, or may include two or four or more independently controllable heaters.

[0081] The inner heater 11 includes a heating element 11a. The heating element 11a is provided below the turntable 400 along the circumferential direction of the turntable 400. The heating element 11a is provided closer to the rotation center Z1 side of the turntable 400 than the position where the rotation shaft 321b is provided. The heating element 11a is sealed in, for example, a quartz tube.

[0082] The intermediate heater 12 includes a heating element 12a. The heating element 12a is provided below the turntable 400 along the circumferential direction of the turntable 400. The heating element 12a is provided on the outer periphery side of the turntable 400 relative to the position where the rotation axis 321b is provided. The heating element 12a is enclosed in, for example, a quartz tube.

[0083] The outer heater 13 includes a heating element 13a. The heating element 13a is provided below the turntable 400 along the circumferential direction of the turntable 400. The heating element 13a is provided on the outer circumferential side of the turntable 400 relative to the position where the heating element 12a is provided. The heating element 13a is enclosed in, for example, a quartz tube.

[0084] The reflector 20 reflects the heating light HL8 emitted from the heating element 12a of the intermediate heater 12 toward the outer periphery of the turntable 400 toward the rotation axis 321b. The reflector 20 extends in the circumferential direction of the turntable 400. The reflector 20 includes two reflecting blocks 20b1 and 20b2, as shown in, for example, FIG. 7(a) and FIG. 7(b). Each of the reflecting blocks 20b1 and 20b2 has an arc shape in a plan view. Also, each of the reflecting blocks 20b1 and 20b2 has a rectangular shape in a cross section along the radial direction of the turntable 400, as shown in FIG. 8. The material of each of the reflecting blocks 20a1 and 20b2 is preferably a metal such as aluminum (Al) from the viewpoint of obtaining a high reflectance. However, the material of each of the reflecting blocks 20b1 and 20b2 may be ceramics such as aluminum oxide (Al2O3).

[0085] Next, the installation structure of the reflector 20 will be described with reference to FIG.

[0086] 9(a), the reflector 20 may be configured as a separate part from the main body 311a, and may be configured to be placed on the main body 311a without being fixed thereto. This makes it possible to suppress deformation of the reflector 20, the main body 311a, etc., even if a difference in thermal expansion occurs between the reflector 20 and the main body 311a due to a change in the temperature of the film formation process. In addition, since the number of reflectors 20 arranged can be easily changed according to the temperature range of the film formation process, the necessary directivity can be selected according to the temperature range of the film formation process.

[0087] 9(b), the reflector 20 may be configured as a separate component from the main body 311a, and fixed to the main body 311a with a fixing member 21 such as a screw. This ensures that the reflector 20 comes into contact with the main body 311a, which is cooled by the cooling unit 316. This reduces the thermal resistance between the reflector 20 and the main body 311a, facilitating heat dissipation from the reflector 20 to the main body 311a. As a result, the temperature rise of the reflector 20 is suppressed.

[0088] 9(c), the reflector 20 may be formed integrally with the main body 311a. In this way, the reflector 20 is directly cooled by the cooling section 316, and thus the temperature rise is suppressed.

[0089] Next, the division structure of the reflector 20 will be described with reference to Fig. 10. Fig. 10(a) to Fig. 10(f) are diagrams of the reflector 20 as viewed from above.

[0090] As shown in FIG. 10( a ), the reflector 20 may include one cylindrical reflective block 20 a extending in the circumferential direction of the rotary table 400 .

[0091] 10(b), the reflector 20 may include reflection blocks 20b1 and 20b2 formed by dividing the cylindrical reflection block 20a into two. Each of the reflection blocks 20b1 and 20b2 extends in the circumferential direction of the turntable 400 and has a semicircular arc shape in a plan view. Each of the reflection blocks 20b1 and 20b2 is provided with a gap Gb between the adjacent reflection blocks 20b1 and 20b2. However, each of the reflection blocks 20b1 and 20b2 may be provided without a gap Gb between the adjacent reflection blocks 20b1 and 20b2.

[0092] As shown in FIG. 10(c), the reflector 20 may include reflection blocks 20c1-20c10 formed by dividing the cylindrical reflection block 20a into ten pieces. Each of the reflection blocks 20c1-20c10 extends in the circumferential direction of the rotary table 400 and has an arc shape in a plan view. Each of the reflection blocks 20c1-20c10 is provided with a gap Gc between the adjacent reflection blocks 20c1-20c10. However, each of the reflection blocks 20c1-20c10 may be provided without a gap Gc between the adjacent reflection blocks 20c1-20c10. In addition, the reflection blocks 20c1-20c10 may all have the same arc length, or at least one of the reflection blocks may have a different arc length. The number of reflection blocks included in the reflector 20 is not limited to ten, and may be nine or less, or eleven or more.

[0093] 10(d) and 10(e), the reflector 20 may be configured by thinning out any one or more of the ten reflection blocks 20c1 to 20c10 shown in FIG. 10(c). In the example of FIG. 10(d), the reflector 20 includes five reflection blocks 20c1, 20c3, 20c5, 20c7, and 20c9 formed by thinning out every other reflection block 20c1 to 20c10. In the example of FIG. 10(e), the reflector 20 includes five reflection blocks 20c3, 20c4, 20c7, 20c8, and 20c9 formed by thinning out the reflection blocks 20c1, 20c2, 20c5, 20c6, and 20c10 of the reflection blocks 20c1 to 20c10. The number of reflection blocks to be thinned out from among the ten reflection blocks 20c1 to 20c10 may be four or less, or may be six or more.

[0094] As shown in FIG. 10(f), the reflector 20 may include ten reflecting blocks 20f1-20f10 each having a rectangular shape in a plan view. The reflecting blocks 20f1-20f10 are arranged along the circumferential direction of the turntable 400. Each of the reflecting blocks 20f1-20f10 is provided with a gap Gf between it and the adjacent reflecting blocks 20f1-20f10. However, each of the reflecting blocks 20f1-20f10 may be provided without a gap Gf between it and the adjacent reflecting blocks 20f1-20f10. The number of reflecting blocks included in the reflector 20 is not limited to ten, and may be nine or less, or eleven or more. The reflector 20 may be configured by thinning out any one or more of the ten reflecting blocks 20f1-20f10.

[0095] Next, the cross-sectional shape of the reflector 20 will be described with reference to Fig. 11 to Fig. 15. Fig. 11 to Fig. 15 show a cross section of the reflector 20 taken along the radial direction of the rotary table 400.

[0096] 11(a) to 11(c), the reflector 20 may have a triangular shape in a cross section along the radial direction of the turntable 400. The reflector 20 includes a first surface 20s1 and a second surface 20s2. The first surface 20s1 is located on the side of the rotation axis 321b, and the second surface 20s2 is located on the opposite side to the rotation axis 321b.

[0097] In the example of FIG. 11(a), the first surface 20s1 is inclined from the bottom to the top so as to move away from the rotation axis 321b, and the second surface 20s2 is inclined from the bottom to the top so as to move closer to the rotation axis 321b.

[0098] In the example of FIG. 11(b), the first surface 20s1 extends in the vertical direction without inclination, and the second surface 20s2 inclines from the bottom to the top so as to approach the rotation axis 321b.

[0099] In the example of FIG. 11(c), the first surface 20s1 and the second surface 20s2 are inclined from the bottom to the top so as to approach the rotation axis 321b.

[0100] In this way, when the turntable 400 has a second surface 20s2 that slopes from bottom to top toward the rotation axis 321b in a radial cross section, the heating light radiated from the heating element 13a of the outer heater 13 is prevented from being blocked by the reflector 20.

[0101] 12(a) to 12(c), the reflector 20 may have a trapezoidal shape in a cross section along the radial direction of the turntable 400. The reflector 20 includes a first surface 20s3 and a second surface 20s4. The first surface 20s3 is located on the side of the rotation axis 321b, and the second surface 20s4 is located on the opposite side to the rotation axis 321b.

[0102] In the example of FIG. 12(a), the first surface 20s3 is inclined from the bottom to the top so as to move away from the rotation axis 321b, and the second surface 20s4 is inclined from the bottom to the top so as to move closer to the rotation axis 321b.

[0103] In the example of FIG. 12(b), the first surface 20s3 is inclined from the bottom to the top so as to approach the rotation axis 321b, and the second surface 20s4 is inclined from the bottom to the top so as to move away from the rotation axis 321b.

[0104] In the example of FIG. 12(c), the first surface 20s3 and the second surface 20s4 are inclined from the bottom to the top so as to approach the rotation axis 321b.

[0105] 13, the reflector 20 may have a rectangular shape in a cross section along the radial direction of the rotary table 400. The reflector 20 includes a first surface 20s5 and a second surface 20s6. The first surface 20s5 is located on the side of the rotation axis 321b, and the second surface 20s6 is located on the opposite side to the rotation axis 321b.

[0106] In the example of FIG. 13, the first surface 20s5 and the second surface 20s6 extend in the vertical direction without being inclined.

[0107] 14(a) and 14(b), the reflector 20 may have a polygonal shape in a cross section along the radial direction of the turntable 400, and the surface on the side of the rotation axis 321b may have a shape surrounding the heating element 12a of the intermediate heater 12. In this case, the heating light emitted from the heating element 12a of the intermediate heater 12 can be efficiently reflected toward the side of the rotation axis 321b. The reflector 20 includes a first surface 20s7, a second surface 20s8, and a third surface 20s9. The first surface 20s7 and the second surface 20s8 are located on the side of the rotation axis 321b, and the third surface 20s9 is located on the opposite side to the rotation axis. In addition, the boundary portion between the first surface 20s7 and the second surface 20s8 is located at approximately the same height as the heating element 12a of the intermediate heater 12.

[0108] 14(a), the first surface 20s7 is inclined from the bottom to the top so as to move away from the rotation axis 321b, the second surface 20s8 is inclined from the bottom to the top so as to move closer to the rotation axis 321b, and the third surface 20s9 extends in the vertical direction without being inclined.

[0109] 14(b), the first surface 20s7 is inclined from bottom to top so as to move away from the rotation axis 321b, the second surface 20s8 is inclined from bottom to top so as to move closer to the rotation axis 321b, and the third surface 20s9 is inclined from bottom to top so as to move closer to the rotation axis 321b.

[0110] 15(a) to 15(c), the reflector 20 may have a curved surface on the rotation axis 321b side in a cross section along the radial direction of the turntable 400. In this case, it is possible to suppress bias of the heating light radiated from the heating element 12a of the intermediate heater 12 and reflected by the surface of the reflector 20 on the rotation axis 321b side. In addition, by changing the curvature of the curved surface, it is possible to make the heating light reflected by the surface of the reflector 20 on the rotation axis 321b side parallel light, or to narrow the focus of the heating light reflected by the surface of the reflector 20 on the rotation axis 321b side. The reflector 20 includes a first surface 20s10 and a second surface 20s11. The first surface 20s10 is located on the side of the rotation axis 321b, and the second surface 20s11 is located on the opposite side to the rotation axis 321b.

[0111] In the example of FIG. 15(a), the first surface 20s10 is inclined in an arc shape from the bottom to the top so as to move away from the rotation axis 321b, and the second surface 20s11 extends in the vertical direction without being inclined.

[0112] In the example of FIG. 15(b), the first surface 20s10 is inclined in an arc shape so that the distance from the heating element 12a is constant regardless of the height position, and the second surface 20s11 is inclined so as to approach the rotation axis 321b from the bottom to the top.

[0113] In the example of FIG. 15(c), the first surface 20s10 inclines in an arc shape from the bottom to the top so as to move away from the rotation axis 321b, and the second surface 20s11 inclines in an arc shape from the bottom to the top so as to move closer to the rotation axis 321b.

[0114] Next, the effect of the deflection section of the first configuration example will be described with reference to Fig. 16 to Fig. 18. Fig. 16 to Fig. 18 are diagrams for explaining the directivity of the heating light radiated from the heat generating element of the heater 10.

[0115] FIG. 16 is a diagram showing an image of heating light HL16 radiated from the heating element 12a when a reflector 20 having a rectangular cross-sectional shape is provided between the heating element 12a of the intermediate heater 12 and the heating element 13a of the outer heater 13.

[0116] Figure 17 is a diagram showing an image of heating light HL17 emitted from the heating element 12a when a reflector 20 having a polygonal cross-sectional shape surrounding the heating element 12a is provided between the heating element 12a of the intermediate heater 12 and the heating element 13a of the outer heater 13.

[0117] FIG. 18 is a diagram showing an image of heating light HL18 radiated from the heating element 12a in the case where the reflector 20 is not provided between the heating element 12a of the intermediate heater 12 and the heating element 13a of the outer heater 13. As shown in FIG.

[0118] As shown in Fig. 18, when the reflector 20 is not provided, the heating light HL18 is emitted from the heating element 13a in all directions. In contrast, as shown in Figs. 16 and 17, when the reflector 20 is provided, the heating light HL16, L17 emitted from the heating element 12a toward the outer periphery of the turntable 400 is reflected by the reflector 20 toward the rotation axis 321b. This makes it possible to selectively heat the position of the rotation axis 321b, which is more difficult to heat than other regions. As a result, the temperature uniformity within the substrate surface can be improved.

[0119] (Second configuration example) 19, a second configuration example of the deflection unit included in the above-mentioned film forming apparatus 300 will be described. The deflection unit of the second configuration example includes a first reflector 30 that reflects the heating light radiated from the heating element of the heater 10 toward the rotation axis 321b, and a second reflector 40 that reflects the heating light radiated from the heating element of the heater 10 in a direction away from the rotation axis 321b.

[0120] The first reflector 30 may have the same configuration as the reflector 20 described above.

[0121] The second reflector 40 is provided at a position farther from the rotation axis 321b than the first reflector 30. The second reflector 40 reflects the heating light HL19 emitted from the heating element 13a of the outer heater 13 provided at a position farther from the rotation axis 321b than the second reflector 40, in a direction away from the rotation axis 321b. The second reflector 40 extends in the circumferential direction of the turntable 400. The material, installation structure, division structure and cross-sectional shape of the second reflector 40 may include the same material, installation structure, division structure and cross-sectional shape as the reflector 20 described above.

[0122] According to the deflection section of the second configuration example, the first reflector 30 reflects the heating light emitted from the heating element 12a of the intermediate heater 12 toward the rotation axis 321b. This makes it possible to selectively heat the position of the rotation axis 321b, which is more difficult to heat than other regions. As a result, it is possible to improve the temperature uniformity within the substrate surface.

[0123] In the deflection unit of the second configuration example, the first reflector 30 is provided on the outer periphery side of the turntable 400 relative to the rotation axis 321b, but the present invention is not limited to this. For example, the first reflector 30 may be provided on the rotation center Z1 side of the turntable 400 relative to the rotation axis 321b. In this case, the first reflector 30 reflects the heating light emitted from the heating element 11a of the inner heater 11 toward the rotation axis 321b. The first reflector 30 may be provided both on the outer periphery side of the turntable 400 relative to the rotation axis 321b and on the rotation center Z1 side of the turntable 400 relative to the rotation axis 321b.

[0124] (Third configuration example) 20, a third configuration example of the deflection unit included in the above-mentioned film formation apparatus 300 will be described. The deflection unit of the third configuration example includes a condenser lens 50 that condenses the heating light emitted from the heating element of the heater 10 toward the rotation axis 321b.

[0125] The condenser lens 50 is formed by Fresnel lens processing on the lower surface of the mounting table 410. The condenser lens 50 extends in the circumferential direction of the rotary table 400. The condenser lens 50 includes an inner condenser lens 51 and an outer condenser lens 52.

[0126] The inner collecting lens 51 is provided closer to the rotation center Z1 of the turntable 400 than the rotation axis 321b, and collects the heating light HL20a emitted from the heat generating element 11a of the inner heater 11 toward the rotation axis 321b.

[0127] The outer condensing lens 52 is provided on the outer circumferential side of the rotary table 400 relative to the rotation axis 321b, and condenses the heating light HL20b emitted from the heating element 12a of the intermediate heater 12 toward the rotation axis 321b.

[0128] According to the deflection section of the third configuration example, the inner focusing lens 51 focuses the heating light HL20a emitted from the heating element 11a of the inner heater 11 toward the rotation axis 321b. Also, the outer focusing lens 52 focuses the heating light HL20b emitted from the heating element 12a of the intermediate heater 12 toward the rotation axis 321b. This makes it possible to selectively heat the position of the rotation axis 321b, which is more difficult to heat than other regions. As a result, it is possible to improve the temperature uniformity within the substrate surface.

[0129] In the deflection unit of the third configuration example, the condenser lens 50 includes the inner condenser lens 51 and the outer condenser lens 52, but is not limited thereto. For example, the condenser lens 50 may include at least one of the inner condenser lens 51 and the outer condenser lens 52.

[0130] In the deflection unit of the third configuration example, the condenser lens 50 is formed by processing the lower surface of the mounting table 410 into a Fresnel lens, but the present invention is not limited to this. For example, the condenser lens 50 may be provided separately from the mounting table 410.

[0131] (Fourth configuration example) 21, a fourth configuration example of the deflection unit included in the above-mentioned film forming apparatus 300 will be described. The deflection unit of the fourth configuration example includes a first focusing lens 60 that focuses the heating light emitted from the heating element of the heater 10 toward the rotation axis 321b, and a second focusing lens 70 that focuses the heating light emitted from the heating element of the heater 10 in a direction away from the rotation axis 321b.

[0132] The first condensing lens 60 is formed by Fresnel lens processing of the lower surface of the mounting table 410. The first condensing lens 60 extends in the circumferential direction of the rotary table 400. The first condensing lens 60 includes an inner condensing lens 61 and an outer condensing lens 62. The inner condensing lens 71 and the outer condensing lens 72 may have the same configuration as the inner condensing lens 51 and the outer condensing lens 52 described above. That is, the inner condensing lens 51 condenses the heating light HL21a emitted from the heating element 11a of the inner heater 11 toward the rotation axis 321b. The outer condensing lens 52 condenses the heating light HL21b emitted from the heating element 12a of the intermediate heater 12 toward the rotation axis 321b.

[0133] The second condensing lens 70 is provided at a position farther from the rotation axis 321b than the first condensing lens 60. The second condensing lens 70 is formed by Fresnel lens processing of the lower surface of the mounting table 410. The second condensing lens 70 extends in the circumferential direction of the turntable 400. The second condensing lens 70 includes an inner condensing lens 71 and an outer condensing lens 72.

[0134] The inner collecting lens 71 collects the heating light HL20a emitted from the heating element 11a of the inner heater 11 in a direction away from the rotation axis 321b. The outer collecting lens 72 collects the heating light HL20c emitted from the heating element 13a of the outer heater 13 in a direction away from the rotation axis 321b.

[0135] According to the deflection section of the fourth configuration example, the inner focusing lens 61 focuses the heating light HL20a emitted from the heating element 11a of the inner heater 11 toward the rotation axis 321b. Also, the outer focusing lens 62 focuses the heating light HL20b emitted from the heating element 12a of the intermediate heater 12 toward the rotation axis 321b. This makes it possible to selectively heat the position of the rotation axis 321b, which is more difficult to heat than other regions. As a result, it is possible to improve the temperature uniformity within the substrate surface.

[0136] In the deflection unit of the fourth configuration example, the first condenser lens 60 includes the inner condenser lens 61 and the outer condenser lens 62. However, the present invention is not limited to this. For example, the first condenser lens 60 may include at least one of the inner condenser lens 61 and the outer condenser lens 62.

[0137] In addition, in the deflection unit of the fourth configuration example, the second condenser lens 70 includes the inner condenser lens 71 and the outer condenser lens 72, but is not limited to this. For example, the second condenser lens 70 may include at least one of the inner condenser lens 71 and the outer condenser lens 72.

[0138] In the deflection unit of the fourth configuration example, the first condensing lens 60 and the second condensing lens 70 are formed by Fresnel lens processing on the lower surface of the mounting table 410, but the present invention is not limited to this. For example, the first condensing lens 60 and the second condensing lens 70 may be provided separately from the mounting table 410.

[0139] [Example] In the examples, the in-plane distribution of the substrate temperature was measured when the substrate W on the mounting table 410 was heated in a film formation apparatus 300 including a reflector 20 having a cross-sectional shape surrounding a heating element as shown in Fig. 14(a). In the examples, the substrate W was heated under four conditions A1 to A4.

[0140] Condition A1 is a condition in which all heaters (the inner heater 11, the intermediate heater 12, and the outer heater 13) are set to the same set temperature.

[0141] Condition A2 is a condition in which the set temperature of the inner heater 11 is set 10° C. higher than the set temperatures of the remaining heaters (the intermediate heater 12 and the outer heater 13).

[0142] Condition A3 is a condition in which the set temperature of the intermediate heater 12 is set 20° C. higher than the set temperatures of the remaining heaters (the inner heater 11 and the outer heater 13).

[0143] Condition A4 is a condition in which the set temperature of the outer heater 13 is set 20° C. higher than the set temperatures of the remaining heaters (the inner heater 11 and the intermediate heater 12).

[0144] In addition, the difference between the measurement results under conditions A2 to A4 and the measurement results under condition A1 was calculated, and the amount of temperature change per set temperature + 1°C was calculated. Next, normalization was performed so that the amount of temperature change at the largest position for each of conditions A2 to A4 was 1. By checking the normalized values, it is possible to determine which position on the substrate W each heater contributes to the temperature change. Specifically, it can be determined that the larger the normalized value of a position is, the greater the contribution of the position to the temperature change is.

[0145] Fig. 22 is a diagram showing the measurement results of the in-plane distribution of the substrate temperature in the example. In Fig. 22, the horizontal axis indicates the substrate position in the radial direction of the turntable 400, and the vertical axis indicates the temperature [°C]. In Fig. 22, the solid line, dashed line, one-dot chain line, and two-dot chain line respectively indicate the measurement results of the substrate temperature when the substrate W was heated under conditions A1, A2, A3, and A4.

[0146] Fig. 23 is a diagram showing normalized results of the measurement in Fig. 22. In Fig. 23, the horizontal axis shows the substrate position in the radial direction of the turntable 400, and the vertical axis shows normalized values ​​of the measurement results in Fig. 22. In Fig. 23, the dashed line, the one-dot chain line, and the two-dot chain line show normalized values ​​of the measurement results of the substrate temperature when the substrate W was heated under conditions A2, A3, and A4, respectively.

[0147] 23, under condition A2 in which the set temperature of the inner heater 11 was set 10° C. higher than the set temperatures of the intermediate heater 12 and the outer heater 13, the normalized values ​​were approximately the same at all substrate positions. This result shows that the contribution of the inner heater 11 to all substrate positions is approximately the same.

[0148] 23, under condition A3 in which the set temperature of the intermediate heater 12 was set 20° C. higher than the set temperatures of the inner heater 11 and the outer heater 13, the normalized value was larger at the center (the position of the rotation axis 321b) than at the periphery of the substrate W. This result indicates that the intermediate heater 12 has a higher contribution to the center of the substrate W than to the periphery.

[0149] 23, under condition A4 in which the set temperature of the outer heater 13 was set 20° C. higher than the set temperatures of the inner heater 11 and the intermediate heater 12, the normalized value was larger at the periphery than at the center of the substrate W. This result indicates that the outer heater 13 has a higher contribution to the periphery of the substrate W than to the center.

[0150] Next, a comparative example performed for comparison with the embodiment will be described. In the comparative example, the in-plane distribution of the substrate temperature was measured when the substrate W on the mounting table 410 was heated in a film formation apparatus in which the reflector 20 was removed from the film formation apparatus 300 of the embodiment. In the comparative example, the substrate W was heated under the same four conditions A1 to A4 as in the embodiment.

[0151] As in the example, the difference between the measurement results under conditions A2 to A4 and the measurement results under condition A1 was calculated, and the amount of temperature change per set temperature + 1°C was calculated. Next, normalization was performed so that the amount of temperature change at the largest position for each of conditions A2 to A4 was 1. By checking the normalized values, it is possible to determine which position on the substrate W each heater contributes to the temperature change. Specifically, it can be determined that the larger the normalized value of a position is, the greater the contribution of the position to the temperature change is.

[0152] Fig. 24 is a diagram showing the measurement results of the in-plane distribution of the substrate temperature in the comparative example. In Fig. 24, the horizontal axis indicates the substrate position in the radial direction of the turntable 400, and the vertical axis indicates the temperature [°C]. In Fig. 24, the solid line, dashed line, one-dot chain line, and two-dot chain line respectively indicate the measurement results of the substrate temperature when the substrate W was heated under conditions A1, A2, A3, and A4.

[0153] Fig. 25 is a diagram showing normalized results of the measurement in Fig. 24. In Fig. 25, the horizontal axis shows the substrate position in the radial direction of the turntable 400, and the vertical axis shows normalized values ​​of the measurement results in Fig. 24. In Fig. 25, the dashed line, the one-dot chain line, and the two-dot chain line show normalized values ​​of the measurement results of the substrate temperature when the substrate W was heated under conditions A2, A3, and A4, respectively.

[0154] 25, under condition A2 in which the set temperature of the inner heater 11 was set 10° C. higher than the set temperatures of the intermediate heater 12 and the outer heater 13, the normalized values ​​were approximately the same at all substrate positions. This result shows that the contribution of the inner heater 11 to all substrate positions is approximately the same.

[0155] 25, under condition A3 in which the set temperature of the intermediate heater 12 was set 20° C. higher than the set temperatures of the inner heater 11 and the outer heater 13, the normalized values ​​were approximately the same at all substrate positions. This result indicates that the contribution of the intermediate heater 12 to all substrate positions is approximately the same.

[0156] 25, under condition A4 in which the set temperature of the outer heater 13 was set 20° C. higher than the set temperatures of the inner heater 11 and the intermediate heater 12, the normalized value was larger at the periphery than at the center of the substrate W. This result indicates that the outer heater 13 contributes more to the periphery of the substrate W than to the center.

[0157] From the results of the above-described examples and comparative examples, it is believed that the temperature at the center of the substrate W (the position of the rotation axis 321b) can be selectively adjusted by providing the reflector 20 between the intermediate heater 12 and the outer heater 13 and changing the set temperature of the intermediate heater 12. For example, it is believed that the temperature at the center of the substrate W (the position of the rotation axis 321b) can be selectively increased by setting the set temperature of the intermediate heater 12 higher than the set temperatures of the remaining heaters. This makes it possible to selectively increase the temperature at the position of the rotation axis 321b, which is more difficult to increase in temperature compared to other regions. As a result, it is possible to improve the temperature uniformity within the substrate surface.

[0158] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0159] 300 Film deposition equipment 321,400 Rotating table 321a, 410 Mounting table 11a, 12a, 13a Heating element 321b Rotation axis 20 Reflector 30 First Reflector 40 Second Reflector 50 Condenser Lens 60 First condenser lens 70 Second focusing lens

Claims

1. A rotary table provided in the processing vessel; a mounting table provided for mounting a substrate on the rotary table and revolving with the rotation of the rotary table; a heating element for heating the substrate placed on the placement table; a rotation shaft that is provided to rotate together with the rotary table and supports the mounting table so as to be rotatable about its axis; a deflection unit that deflects the heating light emitted from the heating element toward the rotation axis; Equipped with the mounting table has a rotation center at a position separated from the rotation center of the rotary table, The heating element is provided along a circumferential direction of the rotary table, The deflection portion extends in a circumferential direction of the turntable along the heating element. Substrate processing equipment.

2. The heating element is provided below the rotating table. The substrate processing apparatus according to claim 1 .

3. The deflection unit includes a reflector that reflects the heating light emitted from the heating element toward the rotation axis. The substrate processing apparatus according to claim 1 .

4. the reflector has a shape such that a surface on the side of the rotation axis in a cross section along a radial direction of the rotary table surrounds the heating element. The substrate processing apparatus according to claim 3 .

5. The reflector includes a plurality of reflection blocks provided along a circumferential direction of the rotary table. The substrate processing apparatus according to claim 3 .

6. The reflector reflects the heating light radiated from the heating element provided at a position closer to the rotation axis than the reflector, toward the rotation axis. The substrate processing apparatus according to claim 3 .

7. the deflection unit includes a second reflector provided at a position farther from the rotation axis than the reflector, the second reflector reflects the heating light radiated from the heating element provided at a position farther from the rotation axis than the second reflector, in a direction away from the rotation axis; The substrate processing apparatus according to claim 3 .

8. The deflection unit includes a condenser lens that condenses the heating light emitted from the heating element toward the rotation axis. The substrate processing apparatus according to claim 1 .

9. the condenser lens is formed by processing the lower surface of the mounting table into a Fresnel lens; The substrate processing apparatus according to claim 8 .

10. the deflection unit includes a second condenser lens provided at a position farther from the rotation axis than the condenser lens, The second condenser lens condenses the heating light emitted from the heating element in a direction away from the rotation axis. The substrate processing apparatus according to claim 8 or 9.

Citation Information

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