Substrate receiving device and processing system

Abstract

To reduce the overall system footprint.SOLUTION: A substrate housing apparatus that accommodates a substrate transported by a transport apparatus having an end effector that holds the substrate and a component including consumable parts installed in a substrate processing device that processes the substrate comprises a container. A first opening is formed in a side wall of the container through which the end effector holding the substrate passes. A recess into which a tip of the end effector is inserted is formed on a surface opposite the first opening in the interior of the container.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] Various aspects and embodiments of the present disclosure relate to substrate receiving apparatus and processing systems. [Background technology]

[0002] For example, Patent Document 1 below discloses a transport device that transports not only substrates but also consumable parts in a processing device. This makes it possible to replace consumable parts without opening the chamber of the processing device to the atmosphere, thereby shortening the downtime of the processing device that performs processing at low pressure. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-96149 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a substrate receiving apparatus and processing system that can reduce the overall system footprint. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate accommodating device for accommodating a substrate transported by a transport device having an end effector for holding a member including a substrate and a consumable part provided in a substrate processing device for processing the substrate, the substrate accommodating device including a container. A first opening is formed in a side wall of the container, through which the end effector holding the substrate passes. Also, a recess is formed in an inner surface of the container facing the first opening, into which the tip of the end effector is inserted. Effect of the Invention

[0006] According to various aspects and embodiments of the present disclosure, it is possible to suppress an increase in the footprint of the entire system. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view illustrating an example of a processing system according to an embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view illustrating an example of a processing module. [Diagram 3] FIG. 3 is a cross-sectional view showing an example of the ashing module in the first embodiment. [Figure 4] FIG. 4 is a cross-sectional view showing an example of a load lock module in the first embodiment. [Diagram 5] FIG. 5 is a plan view showing an example of an end effector. [Figure 6] FIG. 6 is a side view illustrating an example of an end effector. [Figure 7] FIG. 7 is a plan view showing an example of the end effector when transporting the edge ring. [Figure 8] FIG. 8 is a side view illustrating an example of the end effector when transporting the edge ring. [Figure 9] FIG. 9 is a plan view showing an example of the end effector when transporting a substrate. [Figure 10] FIG. 10 is a side view showing an example of the end effector when transporting a substrate. [Figure 11] FIG. 11 is a diagram showing an example of the positional relationship between the end effector and the ashing module when a substrate is carried into the ashing module in the comparative example. [Figure 12] FIG. 12 is a diagram showing an example of the positional relationship between the end effector and the ashing module when the substrate is carried into the ashing module in the first embodiment. [Figure 13]FIG. 13 is a diagram showing an example of the positional relationship between the end effector and the load lock module when a substrate is transferred between the vacuum transfer module and the load lock module in the first embodiment. [Figure 14] FIG. 14 is a diagram showing an example of the positional relationship between the end effector and the load lock module when a substrate is transferred between the atmospheric transfer module and the load lock module in the first embodiment. [Figure 15] FIG. 15 is a cross-sectional view showing an example of an ashing module according to the second embodiment. [Figure 16] FIG. 16 is a diagram showing an example of the positional relationship between the end effector and the ashing module when the substrate is carried into the ashing module in the second embodiment. [Figure 17] FIG. 17 is a cross-sectional view showing an example of a load lock module according to the second embodiment. [Figure 18] FIG. 18 is a diagram showing an example of the positional relationship between the end effector and the load lock module when a substrate is transferred between the vacuum transfer module and the load lock module in the second embodiment. [Figure 19] FIG. 19 is a diagram showing an example of the positional relationship between the end effector and the load lock module when a substrate is transferred between the atmospheric transfer module and the load lock module in the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, embodiments of a substrate accommodating apparatus and a processing system will be described in detail with reference to the drawings. Note that the substrate accommodating apparatus and the processing system disclosed below are not limited to the embodiments.

[0009] Incidentally, when a substrate or consumable part is transported, the substrate or consumable part is placed on an end effector such that its reference position (e.g., center of gravity) is at a predetermined position of an end effector provided at the tip of a robot arm. When the consumable part is a ring-shaped part larger than the substrate, such as an edge ring, if the position where the consumable part is placed is too close to the tip of the end effector, the consumable part may fall off the end effector as the end effector moves. For this reason, it is necessary to prevent the position where the consumable part is placed from being too close to the tip of the end effector. In this way, the consumable part is placed on the end effector such that the reference position of the consumable part is away from the tip of the end effector.

[0010] On the other hand, when a substrate having an outer shape smaller than that of a consumable part is transported, if the substrate is placed on the end effector so that the reference position of the substrate and the reference position of the consumable part are the same when transporting the substrate, the tip of the end effector will extend beyond the area below the substrate. If a large portion of the end effector extends beyond the area below the substrate, the end effector will get in the way when the substrate is transported into an apparatus that does not have space to accommodate consumable parts, making it difficult to transport the substrate to a predetermined position within the apparatus.

[0011] It may be possible to expand the space within the equipment that does not have space for accommodating consumable parts in order to transport the substrate to a predetermined position within the equipment without the end effector getting in the way, but this would increase the footprint of such an equipment and therefore the footprint of the entire system.

[0012] Therefore, the present disclosure provides a technique that can suppress an increase in the footprint of the entire system.

[0013] (First embodiment) [Configuration of Processing System 1] Fig. 1 is a plan view showing an example of the configuration of a processing system 1 according to an embodiment. For convenience, Fig. 1 shows some of the internal components of the device. The processing system 1 includes a main body 10 and a control unit 100 that controls the main body 10.

[0014] The main body 10 includes a vacuum transfer module 11, a plurality of processing modules 12, a plurality of ashing modules 13, a plurality of load lock modules 14, and an atmospheric transfer module 15. The plurality of processing modules 12 are connected to a side wall of the vacuum transfer module 11 via a gate valve G1. The processing modules 12 are an example of a substrate processing apparatus. In the example of FIG. 1, eight processing modules 12 are connected to the vacuum transfer module 11, but the number of processing modules 12 connected to the vacuum transfer module 11 may be seven or less, or nine or more.

[0015] Each of the processing modules 12 performs processing such as etching and film formation on a substrate W to be processed. The processing module 12 is an example of a substrate processing apparatus. FIG. 2 is a schematic cross-sectional view of an example of the processing module 12. In this embodiment, the processing module 12 is, for example, a capacitively coupled plasma processing apparatus. The processing module 12 includes a plasma processing chamber 1210, a gas supply unit 1220, a power supply 1230, and an exhaust system 1240. The processing module 12 also includes a substrate support 1211 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 1210. The gas inlet includes a shower head 1213. The substrate support 1211 is disposed in the plasma processing chamber 1210. The shower head 1213 is disposed above the substrate support 1211. In one embodiment, the shower head 1213 forms at least a part of a ceiling of the plasma processing chamber 1210. The plasma processing chamber 1210 has a plasma processing space 1210s defined by a showerhead 1213, a sidewall 1210a of the plasma processing chamber 1210, and a substrate support 1211. The plasma processing chamber 1210 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 1210s, and at least one gas exhaust port for exhausting gas from the plasma processing space. The sidewall 1210a is grounded. The showerhead 1213 and the substrate support 1211 are electrically insulated from the plasma processing chamber 1210 housing.

[0016] The substrate support 1211 includes a main body 12111 and a ring assembly 12112. The main body 12111 has a central region (substrate support surface) 12111a for supporting a substrate (wafer) W, and an annular region (ring support surface) 12111b for supporting the ring assembly 12112. The annular region 12111b of the main body 12111 surrounds the central region 12111a of the main body 12111 in a plan view. The substrate W is disposed on the central region 12111a of the main body 12111, and the ring assembly 12112 is disposed on the annular region 12111b of the main body 12111 so as to surround the substrate W on the central region 12111a of the main body 12111. In one embodiment, the main body 12111 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The upper surface of the electrostatic chuck has a substrate support surface 12111a. The ring assembly 12112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Although not shown, the substrate support 1211 may include a temperature adjustment module configured to adjust at least one of the electrostatic chuck, the ring assembly 12112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. The substrate support 1211 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 12111a.

[0017] The shower head 1213 is configured to introduce at least one processing gas from the gas supply unit 1220 into the plasma processing space 1210s. The shower head 1213 has at least one gas supply port 1213a, at least one gas diffusion chamber 1213b, and multiple gas inlets 1213c. The processing gas supplied to the gas supply port 1213a passes through the gas diffusion chamber 1213b and is introduced into the plasma processing space 1210s from the multiple gas inlets 1213c. The shower head 1213 also includes a conductive member. The conductive member of the shower head 1213 functions as an upper electrode. In addition to the shower head 1213, the gas introduction unit may include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 1210a.

[0018] The gas supply 1220 may include at least one gas source 1221 and at least one flow controller 1222. In one embodiment, the gas supply 1220 is configured to supply at least one process gas from a respective gas source 1221 through a respective flow controller 1222 to the showerhead 1213. Each flow controller 1222 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 1220 may include one or more flow modulation devices to modulate or pulse a flow rate of the at least one process gas.

[0019] The power source 1230 includes an RF power source 1231 coupled to the plasma processing chamber 1210 via at least one impedance matching circuit. The RF power source 1231 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to a conductive member of the substrate support 1211, a conductive member of the showerhead 1213, or both. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 1210s. Thus, the RF power source 1231 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more processing gases in the plasma processing chamber 1210. In addition, by supplying a bias RF signal to the conductive member of the substrate support 1211, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0020] In one embodiment, the RF power supply 1231 includes a first RF generating unit 1231a and a second RF generating unit 1231b. The first RF generating unit 1231a is coupled to the conductive member of the substrate support 1211, the conductive member of the shower head 1213, or both through at least one impedance matching circuit. The first RF generating unit 1231a is also configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of, for example, 13 MHz to 150 MHz. In one embodiment, the first RF generating unit 1231a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support 1211, the conductive member of the shower head 1213, or both. The second RF generating unit 1231b is coupled to the conductive member of the substrate support 1211 through at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of, for example, 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 1231b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are provided to the conductive members of the substrate support 1211. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0021] The power source 1230 may also include a DC power source 1232 coupled to the plasma processing chamber 1210. The DC power source 1232 includes a first DC generator 1232a and a second DC generator 1232b. In one embodiment, the first DC generator 1232a is connected to a conductive member of the substrate support 1211 and configured to generate a first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support 1211. In one embodiment, the first DC signal may be applied to another electrode, such as an electrode in an electrostatic chuck. In one embodiment, the second DC generator 1232b is connected to a conductive member of the showerhead 1213 and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the showerhead 1213. In various embodiments, at least one of the first and second DC signals may be pulsed. The first DC generating unit 1232a and the second DC generating unit 1232b may be provided in addition to the RF power supply 1231, or the first DC generating unit 1232a may be provided in place of the second RF generating unit 1231b.

[0022] The exhaust system 1240 may be connected to, for example, a gas outlet 1210e provided at the bottom of the plasma processing chamber 1210. The exhaust system 1240 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 1210s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0023] Continuing the explanation by returning to Fig. 1, a plurality of ashing modules 13 are connected to the other side wall of the vacuum transfer module 11 via a gate valve G2. The ashing modules 13 remove, by ashing, masks and the like remaining on the substrate W after the processing by the processing modules 12. Note that, although two ashing modules 13 are connected to the vacuum transfer module 11 in the example of Fig. 1, the number of ashing modules 13 connected to the vacuum transfer module 11 may be one or three or more.

[0024] 3 is a diagram showing an example of the ashing module 13 in the first embodiment. The ashing module 13 has a container 130. A stage 131 on which a substrate W is placed is provided in the container 130. A reference position (e.g., the center of gravity) of the stage 131 is defined as position P0. An opening 132b is formed in a side wall 132 of the container 130, through which the end effector 21 holding the substrate W or the like passes. The opening 132b is an example of a first opening. The opening 132b is opened and closed by a gate valve G2.

[0025] Further, a recess 133 into which the tip of the end effector 21 is inserted is formed on a surface 132a facing the opening 132b inside the container 130. In the example of Fig. 3, the recess 133 is formed on the surface 132a of the side wall 132 of the container 130 facing the opening 132b. The ashing module 13 is an example of a substrate accommodating device.

[0026] Returning to FIG. 1, the explanation will be continued. A plurality of load lock modules 14 are connected to the other side wall of the vacuum transfer module 11 via a gate valve G3. In the example of FIG. 1, two load lock modules 14 are connected to the vacuum transfer module 11, but the number of load lock modules 14 connected to the vacuum transfer module 11 may be one or three or more. At least one of the two load lock modules 14 is capable of housing a substrate W, and at least the other is capable of housing an edge ring ER. The edge ring ER is an example of a consumable part.

[0027] FIG. 4 is a diagram showing an example of the load lock module 14 in the first embodiment. In this embodiment, the load lock module 14 is divided into a load lock module 14 that temporarily houses a substrate W and a load lock module 14 that temporarily houses consumable parts such as an edge ring ER. FIG. 4 shows the load lock module 14 in which the substrate W is temporarily housed. The load lock module 14 may temporarily house both the substrate W and the edge ring ER. The load lock module 14 has a container 140. A stage 141 on which the substrate W is placed is provided in the container 140. The reference position (for example, the center of gravity) of the stage 141 is defined as position P1. An opening 140a and an opening 140b through which the end effector 21 holding the substrate W or the like passes are formed in the side wall of the container 140. The opening 140a is an example of a first opening, and the opening 140b is an example of a second opening. The opening 140a is opened and closed by a gate valve G3, and the opening 140b is opened and closed by a gate valve G4.

[0028] Moreover, a recess 143 is formed on an inner surface 142 of the container 140 at the gate valve G3, into which the tip of the end effector 21 that has entered the container 140 through the opening 140b is inserted. Moreover, a recess 145 is formed on an inner surface 144 of the container 140 at the gate valve G4, into which the tip of the end effector 21 that has entered the container 140 through the opening 140a is inserted. The load lock module 14 is an example of a substrate accommodating device, and the gate valve G4 is an example of a door that opens and closes the second opening.

[0029] Returning to FIG. 1, the description will be continued. A transfer robot 20 is disposed in the vacuum transfer module 11. The transfer robot 20 has an end effector 21 and an arm 22. The end effector 21 holds a member. In this embodiment, the member held by the end effector 21 is, for example, a substrate W and an edge ring ER. Hereinafter, the members such as the substrate W and the edge ring ER will be collectively referred to as the substrate W. The arm 22 moves the end effector 21. The transfer robot 20 moves in the vacuum transfer module 11 along a guide rail 110 provided in the vacuum transfer module 11, and transfers the substrate W and the like between the processing module 12, the ashing module 13, and the load lock module 14. The transfer robot 20 may be fixed to a predetermined position in the vacuum transfer module 11 and may not move in the vacuum transfer module 11. The transfer robot 20 is an example of a transfer device. The inside of the vacuum transfer module 11 is kept at a pressure atmosphere lower than atmospheric pressure.

[0030] One side wall of each load lock module 14 is connected to the vacuum transfer module 11 via a gate valve G3, and the other side wall is connected to the atmospheric transfer module 15 via a gate valve G4. When the substrate W or the like is transferred from the atmospheric transfer module 15 into the load lock module 14 via the gate valve G4, the gate valve G4 is closed and the pressure inside the load lock module 14 is reduced from atmospheric pressure to a predetermined pressure. Then, the gate valve G3 is opened and the substrate W or the like in the load lock module 14 is transferred into the vacuum transfer module 11 by the transfer robot 20.

[0031] Furthermore, in a state in which the pressure inside the load lock module 14 is lower than atmospheric pressure, the transfer robot 20 transfers the substrate W etc. from the vacuum transfer module 11 into the load lock module 14 via the gate valve G3, and the gate valve G3 is closed. Then, the pressure inside the load lock module 14 is increased to atmospheric pressure. Then, the gate valve G4 is opened, and the substrate W etc. inside the load lock module 14 are transferred into the atmospheric transfer module 15.

[0032] A plurality of load ports 16 are provided on a side wall of the atmospheric transfer module 15 opposite to the side wall on which the gate valve G4 is provided. A container such as a FOUP (Front Opening Unified Pod) capable of accommodating a plurality of substrates W is connected to each load port 16. The atmospheric transfer module 15 may be provided with an aligner module or the like that changes the orientation of the substrate W. A container capable of accommodating an edge ring ER is connected to any of the plurality of load ports 16.

[0033] A transfer robot 20 is provided in the atmospheric transfer module 15, and the transfer robot 20 has an end effector 21 and an arm 22. The pressure in the atmospheric transfer module 15 is atmospheric pressure. The transfer robot 20 in the atmospheric transfer module 15 moves in the atmospheric transfer module 15 along a guide rail 150, and transfers the substrate W between the load lock module 14 and a container connected to the load port 16. The transfer robot 20 may be fixed at a predetermined position in the atmospheric transfer module 15 and may not move in the atmospheric transfer module 15. An FFU (Fan Filter Unit) or the like is provided in the upper part of the atmospheric transfer module 15, and air from which particles and the like have been removed is supplied from the upper part into the atmospheric transfer module 15, forming a downflow in the atmospheric transfer module 15. In this embodiment, the atmosphere in the atmospheric transfer module 15 is atmospheric pressure, but in another embodiment, the pressure in the atmospheric transfer module 15 may be controlled to be positive pressure. This makes it possible to suppress the intrusion of particles and the like from the outside into the atmospheric transfer module 15.

[0034] The control unit 100 processes computer-executable instructions that cause the main body 10 to execute various steps described in this disclosure. The control unit 100 may be configured to control each element of the main body 10 to execute various steps described herein. In one embodiment, a part or all of the control unit 10 may be included in any module of the main body 10. The control unit 100 may include, for example, a computer 100a. The computer 100a may include, for example, a processing unit (CPU: Central Processing Unit) 100a1, a storage unit 100a2, and a communication interface 100a3. The processing unit 100a1 may be configured to perform various control operations based on a program stored in the storage unit 100a2. The storage unit 100a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 100a3 may communicate with the main body 10 via a communication line such as a local area network (LAN).

[0035] [Details of End Effector 21] 5 is a plan view showing an example of the end effector 21. On the upper surface of the end effector 21, for example, as shown in FIG. 5, a plurality of first holding parts 211 and a plurality of second holding parts 212 are provided. Each of the first holding parts 211 is formed of an elastic member such as rubber and holds an edge ring ER. Each of the second holding parts 212 is formed of an elastic member such as rubber and holds a substrate W. In the transfer robot 20 provided in the atmospheric transfer module 15, the first holding part 211 and the second holding part 212 may be vacuum pads that suck air to adsorb and hold a member.

[0036] When the edge ring ER is placed on the end effector 21, the position of the outer shape of the edge ring ER becomes, for example, a circle C1. When the edge ring ER is placed on the end effector 21, the edge ring ER is placed on the end effector 21 so that the position of the center of gravity (center) of the edge ring ER is position P2. Position P2 is located at a distance d1 from the tip of the end effector 21.

[0037] When the substrate W is placed on the end effector 21, the position of the outer shape of the substrate W becomes, for example, a circle C2. When the substrate W is placed on the end effector 21, the substrate W is placed on the end effector 21 so that the position of the center of gravity (center) of the substrate W is position P2. That is, the edge ring ER and the substrate W are held on the end effector 21 so that the center of gravity is position P2.

[0038] 6 is a side view showing an example of the end effector 21. In this embodiment, the height of the second holding unit 212 is higher than the height of the first holding unit 211. When the edge ring ER is transported, reaction by-products (so-called deposits) may be attached to the transported edge ring ER. Therefore, when the edge ring ER with deposits attached thereto is transported, the deposits attached to the edge ring ER may become particles and fall onto the first holding unit 211 or the end effector 21.

[0039] If the substrate W is held by the first holding part 211, the substrate W may be contaminated by particles that have fallen onto the first holding part 211. In contrast, in this embodiment, the substrate W is not held by the first holding part 211 that holds the edge ring ER, and therefore contamination of the substrate W can be suppressed.

[0040] Furthermore, if the height of the second holding unit 212 is equal to or lower than the height of the first holding unit 211, particles that have fallen from the edge ring ER onto the first holding unit 211 or the end effector 21 during transportation of the substrate W may re-adhere to the substrate W. In contrast, in this embodiment, the height of the second holding unit 212 that holds the substrate W is higher than the height of the first holding unit 211 that holds the edge ring ER. Therefore, it is possible to prevent particles on the first holding unit 211 or the end effector 21 from re-adhering to the substrate W.

[0041] When the edge ring ER is transported, the edge ring ER is placed on the end effector 21 as shown in, for example, FIGS. 7 and 8. FIG. 7 is a plan view showing an example of the end effector 21 when transporting the edge ring ER. FIG. 8 is a side view showing an example of the end effector 21 when transporting the edge ring ER. Since the diameter of the edge ring ER is larger than the diameter of the substrate W, the edge ring ER is held by the end effector 21 using up to the tip of the end effector 21. Therefore, in a state in which the edge ring ER is held by the end effector 21, the outermost periphery of the edge ring ER is at the same position as the tip of the end effector 21 or, as shown in, for example, FIG. 8, protrudes outward beyond the tip of the end effector 21.

[0042] Moreover, when the substrate W is transported, the substrate W is placed on the end effector 21, for example, as shown in Fig. 9 and Fig. 10. Fig. 9 is a plan view showing an example of the end effector 21 when transporting the substrate W, and Fig. 10 is a side view showing an example of the end effector 21 when transporting the substrate W. In this embodiment, the substrate W and the edge ring ER are held by the end effector 21 so that the position of the center of gravity is located at position P2 on the end effector 21, and the diameter of the substrate W is smaller than the diameter of the edge ring ER. Therefore, in a state in which the substrate W is held by the end effector 21, the tip of the end effector 21 protrudes from the outermost periphery of the substrate W by a distance d2, for example, as shown in Fig. 9 and Fig. 10.

[0043] Here, as a comparative example, consider an ashing module 13 in which a recess 133 is not formed on a surface 132a facing an opening 132b inside a container 130, as shown in Fig. 11. Fig. 11 is a diagram showing an example of the positional relationship between the end effector 21 and the ashing module 13 when a substrate W is carried into the ashing module 13 in the comparative example. In this embodiment, when the substrate W is held by the end effector 21, the tip 21a of the end effector 21 protrudes a distance d2 from the outermost periphery of the substrate W. For this reason, it is difficult to carry the substrate W into the ashing module 13 so that the tip 21a of the end effector 21 comes into contact with the side wall of the ashing module 13 and the center of gravity of the substrate W at position P2 coincides with the reference position P0 of the stage 131. It is also possible to provide the side wall 132 of the ashing module 13 at a position away from the stage 131 so that the tip 21a of the end effector 21 does not come into contact with the side wall of the ashing module 13 when the substrate W is carried into the ashing module 13. However, in that case, the container 130 would become larger overall, leading to an increase in the footprint of the processing system 1.

[0044] In contrast, in this embodiment, as shown in FIG. 12, for example, a recess 133 is formed on a surface 132a facing the opening 132b inside the container 130. FIG. 12 is a diagram showing an example of the positional relationship between the end effector 21 and the ashing module 13 when the substrate W is carried into the ashing module 13 in the first embodiment. As a result, when the substrate W is carried into the ashing module 13, the tip 21a of the end effector 21 is inserted into the recess 133. As a result, as shown in FIG. 12, for example, the substrate W can be carried into the ashing module 13 so that the center of gravity of the substrate W at the position P2 coincides with the reference position P0 of the stage 131. As a result, when the substrate W is carried into the ashing module 13, it is not necessary to arrange the surface 132a of the sidewall 132 at a position away from the stage 131 in order to prevent the tip 21a of the end effector 21 from contacting the sidewall of the ashing module 13. This makes it possible to prevent the container 130 from becoming large, and to prevent an increase in the footprint of the processing system 1.

[0045] In the load lock module 14 of this embodiment, a recess 145 is formed on an inner surface 144 of the container 140 in the gate valve G4, as shown in Fig. 4, for example. As a result, when the substrate W is carried from the vacuum transfer module 11 into the load lock module 14, the tip 21a of the end effector 21 is inserted into the recess 145 of the gate valve G4, as shown in Fig. 13, for example. Fig. 13 is a diagram showing an example of the positional relationship between the end effector 21 and the load lock module 14 when the substrate W is transferred between the vacuum transfer module 11 and the load lock module 14 in the first embodiment.

[0046] As a result, when the substrate W is carried into the load lock module 14 from the vacuum transfer module 11, the substrate W can be carried into the load lock module 14 so that the center of gravity of the substrate W coincides with the reference position P1 of the stage 141. As a result, when the substrate W is carried into the load lock module 14, it is not necessary to provide the gate valve G4 at a position away from the stage 141 in order to prevent the tip 21a of the end effector 21 from contacting the gate valve G4. As a result, it is possible to suppress an increase in the size of the container 140 and an increase in the footprint of the processing system 1.

[0047] In this embodiment, as shown in Fig. 4, for example, a recess 143 is formed on an inner surface 142 of a container 140 in the gate valve G3. Thereby, when a substrate W is carried from the atmospheric transfer module 15 into the load lock module 14, a tip 21a of the end effector 21 is inserted into the recess 143 of the gate valve G3, as shown in Fig. 14, for example. Fig. 14 is a diagram showing an example of the positional relationship between the end effector 21 and the load lock module 14 when a substrate W is transferred between the atmospheric transfer module 15 and the load lock module 14 in the first embodiment.

[0048] As a result, when the substrate W is carried into the load lock module 14 from the atmospheric transfer module 15, the substrate W can be carried into the load lock module 14 so that the center of gravity of the substrate W coincides with the reference position P1 of the stage 141. As a result, when the substrate W is carried into the load lock module 14, it is not necessary to provide the gate valve G3 at a position away from the stage 141 in order to prevent the tip 21a of the end effector 21 from contacting the gate valve G3. As a result, it is possible to suppress an increase in the size of the container 140 and an increase in the footprint of the processing system 1.

[0049] The first embodiment has been described above. As described above, the processing system 1 in this embodiment includes the processing module 12, the transport robot 20, and the ashing module 13. The processing module 12 processes the substrate W. The transport robot 20 has an end effector 21 that holds members including the substrate W and the edge ring ER provided in the processing module 12, and transports the members. The ashing module 13 temporarily stores the substrate. The ashing module 13 has a container 130. An opening 132b through which the end effector 21 holding the substrate W passes is formed in a side wall 132 of the container 130. In addition, a recess 133 into which the tip 21a of the end effector 21 is inserted is formed in a surface 132a facing the opening 132b on the inside of the container 130. With this configuration, it is possible to suppress an increase in size of the ashing module 13 and an increase in the footprint of the processing system 1.

[0050] In the above embodiment, the recess 133 is formed on the surface 132a of the side wall 132 of the container 130 facing the opening 132b. This makes it possible to prevent the ashing module 13 from becoming large, and to prevent an increase in the footprint of the processing system 1.

[0051] In the above-described embodiment, the substrate accommodating device may be a load lock module 14. For example, in the load lock module 14, an opening 140b through which another end effector 21 holding a substrate W passes is formed in a side wall of the container 140 facing the opening 140a of the load lock module 14. A gate valve G4 for opening and closing the opening 140b is provided in the opening 140b. A recess 145 into which the tip 21a of the end effector 21 is inserted is formed in an inner surface 144 of the container 140 at the gate valve G4. With this configuration, it is possible to suppress an increase in size of the load lock module 14 and an increase in the footprint of the processing system 1.

[0052] Second embodiment In the first embodiment described above, when the substrate W is carried into the ashing module 13 through the opening 132b, the substrate W is carried into the ashing module 13 along a direction, for example, perpendicular to the surface 132a facing the opening 132b. In contrast, in this embodiment, the substrate W is carried into the ashing module 13 along a direction oblique to the surface 132a facing the opening 132b. This makes it possible to shorten the travel distance of the substrate W and shorten the time required to carry the substrate W into the ashing module 13. In addition, since the arm 22 of the transport robot 20 can be shortened, the transport robot 20 can be made smaller in size.

[0053] Fig. 15 is a cross-sectional view showing an example of the ashing module 13 in the second embodiment. In Fig. 15, the configurations denoted with the same reference numerals as in Fig. 3 are the same as or similar to the configurations described in Fig. 3, and therefore description thereof will be omitted. In the ashing module 13 of this embodiment, the side wall 132 is formed with a wall surface 136, a wall surface 137, a tapered portion 138, and a tapered portion 139. The tapered portion 138 and the tapered portion 139 are formed on the side wall 132 near the opening 132b, obliquely with respect to the surface 132a facing the opening 132b.

[0054] When the substrate W is transported into the ashing module 13, for example, as shown in Fig. 16, the end effector 21 holding the substrate W enters the container 130 along the tapered portion 138 and the tapered portion 139. Fig. 16 is a diagram showing an example of the positional relationship between the end effector 21 and the ashing module 13 when the substrate W is carried into the ashing module 13 in the second embodiment.

[0055] In this embodiment, the substrate W is carried into the ashing module 13 in a direction oblique to the surface 132a, and therefore the distance between the substrate W and the tip 21a in a direction perpendicular to the surface 132a is longer than in the first embodiment. Therefore, in this embodiment, it is more difficult to carry the substrate W into the ashing module 13 so that the center of gravity of the substrate W at position P2 coincides with the reference position P0 of the stage 131 than in the first embodiment.

[0056] In contrast to this, in the ashing module 13 of this embodiment, for example, as shown in Fig. 16, a recess 133 is formed on the surface 132a facing the opening 132b inside the container 130. As a result, when the substrate W is carried into the ashing module 13, the tip 21a of the end effector 21 is inserted into the recess 133. Therefore, for example, as shown in Fig. 16, it is possible to carry the substrate W into the ashing module 13 so that the center of gravity of the substrate W at the position P2 coincides with the reference position P0 of the stage 131. Therefore, in the ashing module 13 having the tapered portion 138 and the tapered portion 139 formed obliquely with respect to the surface 132a facing the opening 132b as shown in Fig. 15, it is particularly effective that the recess 133 is formed on the surface 132a.

[0057] Furthermore, in this embodiment, the substrate W is carried into the load lock module 14 in a direction oblique to the gate valve G4 of the load lock module 14. This makes it possible to shorten the moving distance of the substrate W, and therefore the time required to carry the substrate W from the vacuum transfer module 11 into the load lock module 14. Furthermore, since the arm 22 of the transfer robot 20 can be shortened, the transfer robot 20 can be made smaller in size.

[0058] Fig. 17 is a cross-sectional view showing an example of the load lock module 14 in the second embodiment. In Fig. 17, the components denoted with the same reference numerals as those in Fig. 4 are the same as or similar to those described in Fig. 4, and therefore will not be described. In the load lock module 14 of this embodiment, a tapered portion 148 is formed near the opening 140a of the side wall 146, and a tapered portion 149 is formed near the opening 140a of the side wall 147. The tapered portion 148 and the tapered portion 149 are formed obliquely with respect to the surface 144 of the gate valve G4 facing the opening 140a.

[0059] When the substrate W is transferred from the vacuum transfer module 11 into the load lock module 14, the end effector 21 holding the substrate W enters the container 140 along the tapered portion 148 and the tapered portion 149, as shown in Fig. 18 for example. Fig. 18 is a diagram showing an example of the positional relationship between the end effector 21 and the load lock module 14 when the substrate W is transferred between the vacuum transfer module 11 and the load lock module 14 in the second embodiment.

[0060] In this embodiment, the substrate W is carried into the load lock module 14 along a direction oblique to the surface 144 of the gate valve G4, and therefore the distance between the substrate W and the tip 21a in a direction perpendicular to the surface 144 of the gate valve G4 is longer than in the first embodiment. Therefore, in this embodiment, it is more difficult than in the first embodiment to carry the substrate W into the load lock module 14 so that the center of gravity of the substrate W at position P2 coincides with the reference position P1 of the stage 141.

[0061] In contrast, in the load lock module 14 of this embodiment, as shown in FIG. 18, for example, a recess 145 is formed on a surface 144 of the gate valve G4 facing the opening 140a inside the container 140. As a result, when the substrate W is carried into the load lock module 14 from the vacuum transfer module 11, the tip 21a of the end effector 21 is inserted into the recess 145. Therefore, as shown in FIG. 18, for example, the substrate W can be carried into the load lock module 14 so that the center of gravity of the substrate W at the position P2 coincides with the reference position P1 of the stage 141. Therefore, in the load lock module 14 having the tapered portions 148 and 149 formed obliquely with respect to the surface 144 of the gate valve G4 facing the opening 140a, it is particularly effective that the recess 145 is formed on the surface 144 of the gate valve G4.

[0062] When the substrate W is transferred from the atmospheric transfer module 15 into the load lock module 14, the end effector 21 holding the substrate W advances into the container 140 along a direction toward the surface 142 of the gate valve G3, as shown in FIG. 19 for example. FIG. 19 is a diagram showing an example of the positional relationship between the end effector 21 and the load lock module 14 when the substrate W is transferred between the atmospheric transfer module 15 and the load lock module 14 in the second embodiment. When the substrate W is transferred from the atmospheric transfer module 15 into the load lock module 14, the tip 21a of the end effector 21 is inserted into the recess 143 of the gate valve G3, as in the first embodiment. This allows the substrate W to be transferred into the load lock module 14 from the atmospheric transfer module 15 so that the center of gravity of the substrate W coincides with the reference position P1 of the stage 141.

[0063] It should be noted that the embodiments disclosed herein are illustrative in all respects and should not be construed as limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0064] ER Edge Ring G1 Gate Valve G2 Gate Valve G3 Gate Valve G4 Gate Valve P0 position P1 position P2 position W substrate 1 Processing System 10 Main unit 100 Control section 11 Vacuum Transfer Module 12 Processing Module 13 Ashing Module 130 Container 131 Stages 132 Side wall 132a side 132b opening 133 Recess 136 Wall 137 Wall 138 Tapered section 139 Tapered section 14 Load Lock Module 140 Container 140a opening 140b opening 141 Stages 142 sides 143 Recess 144 sides 145 Recess 146 Side wall 147 Side wall 148 Tapered section 149 Tapered section 15 Atmospheric Transport Module 16 Loading Port 20 Transport Robot 21 End effector

Claims

1. A substrate accommodating device that accommodates a substrate transported by a transport device having an end effector that holds a substrate and a member including a consumable part provided in a substrate processing device that processes the substrate, a container including a stage on which the substrate is placed, a first opening is formed in a side wall of the container, through which an end effector holding the substrate passes; a recess into which a tip of the end effector is inserted is formed on an inner surface of the container facing the first opening, A substrate accommodating device in which the recess accommodates the tip of the end effector under conditions in which the end effector holding the substrate is positioned within the container so that the center of gravity of the substrate held by the end effector coincides with the center of gravity of the stage, and the tip of the end effector penetrates a virtual line passing through the inner surface of the container under the conditions.

2. The substrate accommodating device according to claim 1 , wherein the recess is formed in a side wall of the container opposite to the first opening.

3. a second opening is formed in a side wall of the container opposite to the first opening, through which another end effector holding the substrate passes; The second opening is provided with a door for opening and closing the second opening, The substrate accommodating device according to claim 1 , wherein the recess is formed on an inner surface of the door of the container.

4. The substrate accommodation device of claim 3 , wherein the substrate accommodation device is a load lock module.

5. a substrate processing apparatus for processing a substrate; a transport device that has an end effector that holds the substrate and a member including a consumable part provided in the substrate processing apparatus, and transports the substrate and the member; a substrate storage device for temporarily storing the substrate; Equipped with the substrate accommodation device has a container including a stage on which the substrate is placed, an opening is formed in a side wall of the container through which the end effector holding the substrate passes; a recess into which a tip of the end effector is inserted is formed on an inner surface of the container facing the opening, A processing system in which the recess accommodates the tip of the end effector under conditions in which the end effector holding the substrate is positioned within the container so that the center of gravity of the substrate held by the end effector coincides with the center of gravity of the stage, and the tip of the end effector penetrates a virtual line passing through the inner surface of the container under the conditions.

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