Light emitting device and method for manufacturing the same

Abstract

To suppress a manufacture defect such as solder ball generation.SOLUTION: A light-emitting device comprises a semiconductor light-emitting element and a package. The package includes a substrate and a lid joined to the substrate. The substrate includes a first top face region directly or indirectly supporting the semiconductor light-emitting element and a second top face region enclosing the first top face region in a planar view watching the first top face region in a normal direction. The package includes: an inner metal layer positioned on the second top face region of the substrate; an outer metal layer which is parallel along an outer edge of the inner metal layer; and a slit part positioned between the inner metal layer and the outer metal layer on the second top face region. In the planar view, an inner edge of the inner metal layer is positioned inside of an outer edge of the lid and in the planar view, at least a portion of an outer edge of the outer metal layer is positioned outside of the outer edge of the lid. The lid is joined to the substrate by a joint material provided on the inner metal layer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a light emitting device and a method for manufacturing a light emitting device. [Background technology]

[0002] Patent Document 1 discloses a package that seals electronic components and wiring circuits. Patent Document 2 discloses a package that hermetically seals an infrared detection element. The packages disclosed in Patent Documents 1 and 2 each include a base material that supports the electronic components, and a lid. A metal layer provided on the base material and a metal layer provided on the lid are joined by soldering, thereby sealing the electronic components in the package. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2017-54856 A [Patent Document 2] JP 2014-67895 A Summary of the Invention [Problem to be solved by the invention]

[0004] When the package disclosed in Patent Document 1 or Patent Document 2 is adopted, a part of the bonding material bonding the base material and the lid may flow out to the outside of the package, which may cause manufacturing defects such as solder balls.

[0005] The present disclosure provides a light emitting device including a package that can solve such problems, and a method for manufacturing the light emitting device. [Means for solving the problem]

[0006] In an exemplary embodiment, the light emitting device of the present disclosure comprises a semiconductor light emitting element and a package that seals the semiconductor light emitting element, the package having a base material and a lid bonded to the base material, the base material having a first top surface region that directly or indirectly supports the semiconductor light emitting element and a second top surface region that surrounds the first top surface region in a planar view seen from a normal direction of the first top surface region, the package having an inner metal layer located on the second top surface region of the base material, an outer metal layer that is parallel to an outer edge of the inner metal layer, and a slit portion located between the inner metal layer and the outer metal layer on the second top surface region, the inner edge of the inner metal layer being located inside the outer edge of the lid in the planar view, and at least a portion of the outer edge of the outer metal layer being located outside the outer edge of the lid in the planar view, and the lid being bonded to the base material by a bonding member provided on the inner metal layer.

[0007] In an exemplary embodiment, a manufacturing method for a light emitting device of the present disclosure includes the steps of: preparing a substrate having, in a planar view, a first top surface region and a second top surface region surrounding the first top surface region, an inner metal layer located on the second top surface region, an outer metal layer parallel to the outer edge of the inner metal layer, and a slit portion located between the inner metal layer and the outer metal layer on the second top surface region; and preparing a lid; arranging a semiconductor light emitting element on the first top surface region of the substrate; attaching a bonding member to the inner metal layer; and bonding the lid and the substrate via the bonding member. Effect of the Invention

[0008] According to the embodiments of the present disclosure, there is provided a light emitting device including a package capable of suppressing outflow of a bonding material and suppressing manufacturing defects such as the occurrence of solder balls, and a method for manufacturing the light emitting device. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is an exploded perspective view of a light emitting device according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a plan view of the light emitting device according to the first embodiment of the present disclosure. [Diagram 3] FIG. 3 is a cross-sectional view of the light emitting device taken along line III-III shown in FIG. [Figure 4] FIG. 4 is a plan view of the light emitting device according to the first embodiment of the present disclosure with the lid removed. [Diagram 5] FIG. 5 is a bottom view of the lid. [Figure 6] FIG. 6 is an enlarged view of the joint between the base material and the lid. [Figure 7A] FIG. 7A is a schematic diagram for explaining that solder balls may occur in the absence of a flow suppression structure. [Figure 7B] FIG. 7B is a schematic diagram for explaining that solder balls may occur in the absence of a flow suppression structure. [Figure 7C] FIG. 7C is a schematic diagram for explaining that solder balls may occur in the absence of a flow suppression structure. [Figure 7D] FIG. 7D is a schematic diagram for explaining that solder balls may occur in the absence of a flow suppression structure. [Figure 8A] FIG. 8A is a schematic diagram for explaining how the occurrence of solder balls is suppressed when a flow suppression structure is provided. [Figure 8B] FIG. 8B is a schematic diagram for explaining how the occurrence of solder balls is suppressed when a flow suppression structure is provided. [Figure 8C] FIG. 8C is a schematic diagram for explaining how the occurrence of solder balls is suppressed when a flow suppression structure is provided. [Figure 8D] FIG. 8D is a schematic diagram for explaining how the occurrence of solder balls is suppressed when a flow suppression structure is provided. [Figure 9] FIG. 9 is a bottom view of the lid further comprising a second lid metal layer. [Figure 10] FIG. 10 is an enlarged view of a joint between a base material and a lid in a modified example of the flow suppressing structure. [Figure 11]FIG. 11 is a bottom view of the lid further including a ridge. [Figure 12] FIG. 12 is an enlarged view of a joint between a base material and a lid according to another modified example of the flow suppressing structure. [Figure 13] FIG. 13 is a plan view of the light emitting device according to the first embodiment of the present disclosure in which a plurality of semiconductor light emitting elements are arranged, with the lid removed. [Figure 14] FIG. 14 is an exploded perspective view of a light emitting device according to the second embodiment of the present disclosure. [Figure 15] FIG. 15 is a plan view of a light emitting device according to the second embodiment of the present disclosure with the lid removed. [Figure 16] FIG. 16 is a cross-sectional view of a light emitting device according to a second embodiment of the present disclosure parallel to the XZ plane. [Figure 17] FIG. 17 is an enlarged view of the joint between the base material and the lid. [Figure 18] FIG. 18 is a plan view of a substrate further having an inner metal layer positioned inwardly of the inner edge of the inner metal layer. [Figure 19] FIG. 19 is a plan view of a light emitting device according to a second embodiment of the present disclosure in which a plurality of semiconductor light emitting elements are arranged, with the lid removed. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the drawings. The following embodiments are merely illustrative, and the light-emitting device according to the present disclosure is not limited to the following embodiments. For example, the numerical values, shapes, materials, steps, and the order of the steps shown in the following embodiments are merely illustrative, and various modifications are possible as long as no technical contradiction occurs. In addition, the various aspects described below are merely illustrative, and various combinations are possible as long as no technical contradiction occurs.

[0011] The dimensions, shapes, and the like of the components shown in the drawings may be exaggerated for ease of understanding, and may not reflect the dimensions, shapes, and size relationships between the components in an actual light-emitting device. Also, in order to avoid the drawings becoming overly complicated, some elements may be omitted from the illustration.

[0012] In the following description, components having substantially the same functions are indicated by common reference symbols, and descriptions thereof may be omitted. Terms indicating a specific direction or position (for example, "upper", "lower", "right", "left" and other terms including these terms) may be used. However, these terms are merely used for the sake of clarity of the relative direction or position in the referenced drawings. As long as the relationship of the relative direction or position by terms such as "upper" and "lower" in the referenced drawings is the same, the drawings other than the present disclosure, the actual product, the manufacturing device, etc. may not be arranged in the same manner as in the referenced drawings.

[0013] In this specification and claims, polygons such as triangles and quadrangles are not limited to polygons in the strict mathematical sense, but also include shapes in which the corners of the polygon have been processed, such as by rounding, chamfering, removing corners, or rounding off. In addition, shapes in which processing has been applied to the middle part of a side, not just the corners (edges) of a polygon, are also called polygons. In other words, shapes that have been partially processed while retaining the polygon as a base are included in the term "polygon."

[0014] Conventionally, if the amount of bonding material is excessive, a part of the bonding material flows out from the package, causing manufacturing defects such as the generation of solder balls. On the other hand, if the amount of bonding material is small, although the generation of solder balls can be suppressed, bonding defects are likely to occur, and as a result, it may be difficult to ensure the airtightness of the package. According to the light-emitting device according to the embodiment of the present disclosure, the above problem can be solved by forming an inner metal layer and an outer metal layer on the base material, and further forming a slit portion between the inner metal layer and the outer metal layer.

[0015] An example of the configuration of a light emitting device according to an embodiment of the present disclosure will be described with reference to the drawings, in which an X-axis, a Y-axis, and a Z-axis that are perpendicular to each other are shown for reference.

[0016] First Embodiment First, reference is made to FIG. 1 to FIG. 6. FIG. 1 is an exploded perspective view of the light-emitting device 100 according to the first embodiment. FIG. 2 is a plan view of the light-emitting device 100 in a plan view seen from the normal direction of the support surface 15a of the base material 10. FIG. 3 is a cross-sectional view of the light-emitting device 100 taken along line III-III shown in FIG. 2. FIG. 4 is a plan view of the light-emitting device 100 without the lid 20 in a plan view seen from the normal direction of the support surface 15a of the base material 10. FIG. 5 is a bottom view of the lid 20 as seen from the side of the lower surface region 20a. FIG. 6 is an enlarged view of the joint portion between the base material 10 and the lid 20. The portion shown enlarged in FIG. 6 corresponds to the cross section of the light-emitting device 100 taken along line VI-VI in FIG. 2.

[0017] The light emitting device 100 according to the first embodiment of the present disclosure includes a semiconductor light emitting element 40 and a package P that seals the semiconductor light emitting element 40. The light emitting device 100 illustrated in FIG. 1 further includes a submount 30 that supports the semiconductor light emitting element 40 and an optical member 50 having a reflective surface that reflects light emitted from the semiconductor light emitting element 40 upward. However, as described below, the light emitting device 100 may include a plurality of semiconductor light emitting elements 40. Depending on the product specifications or required specifications, the light emitting device 100 may include a temperature sensor for measuring the internal temperature, such as a protection element represented by a Zener diode and / or a thermistor. Furthermore, the light emitting device 100 may include a light receiving element, such as a photodiode, for monitoring the intensity of light emitted from the semiconductor light emitting element 40.

[0018] 1 has a substantially rectangular parallelepiped shape. However, the shape of the light emitting device 100 is not limited to this. The size of the light emitting device 100 in the X direction is, for example, about 1.0 mm to 15.0 mm, and the size in the Y direction is about 1.0 mm to 15.0 mm. The thickness of the light emitting device 100 in the Z direction may be about 1.0 mm to 6.0 mm.

[0019] (Package P, Base 10 and Lid 20) The package P has a base material 10 and a lid 20 bonded to the base material 10. The base material 10 has a bottom 10a having a support surface 15a and a side wall 10b supported by the support surface 15a. The base material 10 illustrated in FIG. 3 is a member in which the bottom 10a and the side wall 10b are integrally formed, but is not limited thereto. The bottom 10a and the side wall 10b may be separate members, and the side wall 10b may be bonded to the peripheral region of the support surface 15a of the bottom 10a. The submount 30 supporting the semiconductor light emitting element 40 and the optical member 50 are disposed on the support surface 15a and are surrounded by the side wall 10b.

[0020] As illustrated in FIG. 3 and FIG. 4, the base material 10 has a first upper surface region 11a that directly or indirectly supports the semiconductor light emitting element 40, and a second upper surface region 11b that surrounds the first upper surface region 11a in a plan view. In this specification, "plan view" means a plan view seen from the normal direction of the support surface 15a or the first upper surface region 11a. In the drawings, the normal direction of the support surface 15a or the first upper surface region 11a coincides with the Z direction. The base material 10 has a step between the support surface 15a and the upper surface 15b of the side wall portion 10b. The first upper surface region 11a is located on the support surface 15a, and the second upper surface region 11b is located on the upper surface 15b of the side wall portion 10b that is located above the support surface 15a. In other words, the package P included in the light emitting device 100 has a step between the first upper surface region 11a and the second upper surface region 11b. This allows the semiconductor light emitting element 40 and the second upper surface region 11b to which the lid 20 is bonded to be located away from each other, thereby preventing the semiconductor light emitting element 40 from being affected by heat generated when bonding the lid 20.

[0021] A recess is formed in the base material 10 due to a step between the first top surface region 11a and the second top surface region 11b. A sealed space V is formed in the package P by covering the recess formed in the base material 10 with the lid 20. The submount 30 is disposed in the sealed space V and supports the semiconductor light emitting element 40. However, the submount 30 is not essential. When the submount 30 is not present, the semiconductor light emitting element 40 is directly bonded to the first top surface region 11a, and when the submount 30 is present, the semiconductor light emitting element 40 is indirectly bonded to the first top surface region 11a while being supported by the submount 30.

[0022] The lid 20 illustrated in Fig. 1 is a plate-like member. As will be described later, the sealed space V can be sealed or hermetically sealed by joining the lid 20 to the base material 10. By hermetically sealing, the members arranged in the sealed space V are substantially prevented from deteriorating. Furthermore, as will be described later, when a laser diode that emits blue or green light is used as the semiconductor light-emitting element 40, the influence of dust collection by the laser light can be suppressed.

[0023] The substrate 10 can be formed from, for example, ceramic, metal, glass, silicon, resin, etc. Examples of ceramic include aluminum nitride, silicon nitride, aluminum oxide, silicon carbide, etc.

[0024] The substrate 10 illustrated in FIG. 4 has an inner metal layer 12a, an outer metal layer 12b, and a slit portion 13. The inner metal layer 12a and the outer metal layer 12b are located on the second upper surface region 11b of the substrate 10. In other words, the inner metal layer 12a and the outer metal layer 12b are provided on the upper surface 15b of the side wall portion 10b. In the illustrated example, the inner metal layer 12a is formed continuously along the inner edge of the upper surface 15b of the side wall portion 10b. The outer metal layer 12b is formed in parallel along the outer edge of the inner metal layer 12a. The outer metal layer 12b does not need to be formed continuously so as to completely surround the inner metal layer 12a, and may be partially interrupted. The width of the outer metal layer 12b is not uniform along the outer edge of the inner metal layer 12a. For example, the width at the corner portions corresponding to each of the four corners of the outer shape of the substrate 10 may be wider than the width at other portions. As described later, the thickened portion can absorb the excess bonding material during bonding, and can suppress the bonding material from flowing out. The slit portion 13 is located between the inner metal layer 12a and the outer metal layer 12b on the second upper surface region 11b.

[0025] As illustrated in FIG. 2, in plan view, each of the inner edge and the outer edge of the inner metal layer 12a shown in FIG. 4 is located inside the outer edge of the lid 20. With this configuration, even if the amount of the bonding material is small, the bonding material can be spread on the inner metal layer 12a as described later. In addition, since the inner metal layer 12a that contributes to bonding is located inside the outer edge of the lid 20, the bonding area between the lid 20 and the inner metal layer 12a can be secured. Therefore, poor airtightness can be suppressed. In addition, at least a part of the outer edge of the outer metal layer 12b can be located outside the outer edge of the lid 20. With this configuration, the outer metal layer 12b can absorb the excess bonding material that is not used for bonding the lid 20 and the package P, so that the flow of the bonding material can be suppressed. In plan view, for example, as shown in FIG. 2, the outer edge of the outer metal layer 12b may be located outside the outer edge of the lid 20 in its entirety, or a part of the outer edge of the outer metal layer 12b may be located inside the outer edge of the lid 20 and overlap the lid 20. Alternatively, the entire inner edge of the outer metal layer 12b may be positioned outside the outer edge of the lid 20 so that the lid 20 and the outer metal layer 12b do not overlap.

[0026] In the X or Y direction, the width of the outer metal layer 12b is, for example, 30 μm or more and 1000 μm or less. The width of the inner metal layer 12a is larger than the width of the outer metal layer 12b, for example, about 2 to 4 times the width of the outer metal layer 12b. The thickness of each of the inner metal layer 12a and the outer metal layer 12b is, for example, 1 μm or more and 100 μm or less. The width of the slit portion 13 can be, for example, 30 μm or more. The width of the slit portion 13 is, for example, 30 μm or more and 500 μm or less, preferably 30 μm or more and 300 μm or less, and more preferably 30 μm or more and 150 μm or less. By making the width of the slit portion 13 30 μm or more, as described later, even if the amount of the bonding member is small, the slit portion 13 can suppress the area where the bonding member spreads by wetting to a small area, thereby suppressing poor airtightness. Furthermore, even if there is excess bonding material, the slit portion 13 reduces the amount of bonding material that spreads onto the outer metal layer 12b, making it easier for the outer metal layer 12b to absorb the excess bonding material, and preventing the bonding material from flowing out of the package.

[0027] The inner metal layer 12a and the outer metal layer 12b may be connected by one or more branches 14. The branches 14 are provided so as to cross the slit portion 13. In the example shown in FIG. 4, the inner metal layer 12a and the outer metal layer 12b are connected by two branches 14. However, the number of branches 14 is not limited to two, and may be one or three or more. The position at which the branches 14 are provided is not limited to the example shown in the figure, and is arbitrary. The branches 14 can be used as alignment marks when arranging members on the substrate 10 during the manufacture of the light-emitting device. The width of the branches 14 (the size in the X direction shown in FIG. 4) may be, for example, 30 μm or more and 200 μm or less. In particular, when forming a pattern of a metal layer by electrolytic plating as described later, the branches 14 are useful because they allow current to flow from the inner metal layer 12a through the branches 14 to the portion of the second upper surface region 11b where the outer metal layer 12b is to be formed.

[0028] As illustrated in FIG. 5 and FIG. 6, the lid 20 has a lower surface region 20a facing the first upper surface region 11a and the second upper surface region 11b of the base material 10. The lid 20 may have a first lid-side metal layer 21a in a portion of the lower surface region 20a facing the inner metal layer 12a. The first lid-side metal layer 21a in the illustrated example includes an inner portion 21a-1 located on the inside of the inner edge of the inner metal layer 12a in a plan view. In the X or Y direction, the width of the first lid-side metal layer 21a is larger than the width of the inner metal layer 12a. The distance between the base material 10 and the lid 20 at the joint portion between the first lid-side metal layer 21a and the inner metal layer 12a is, for example, 5 μm or more and 300 μm or less.

[0029] The lid 20 in this embodiment has a light-transmitting region that transmits the light emitted from the semiconductor light-emitting element 40. The lid 20 can be made of, for example, sapphire. Sapphire is a material that is light-transmitting and has a relatively high strength. The lid 20 can be made of a light-transmitting material other than sapphire, such as glass, plastic, or quartz. It is sufficient that the light-transmitting region of the lid 20 is made of a light-transmitting material, and the other portions do not need to be made of a light-transmitting material.

[0030] Each of the inner metal layer 12a, the outer metal layer 12b, and the first lid-side metal layer 21a may be made of a metal material such as tungsten, molybdenum, nickel, gold, silver, platinum, titanium, copper, aluminum, ruthenium, etc. Each metal layer preferably has high wettability with respect to the bonding member.

[0031] The lid 20 is bonded to the base material 10 by a bonding member provided on the inner metal layer 12a. Specifically, the first lid side metal layer 21a and the inner metal layer 12a are bonded by a bonding layer 70 formed from the bonding member, so that the package P hermetically seals the semiconductor light emitting element 40. Examples of the bonding member may include metal materials such as gold-tin, solder alloy, or brazing material. In the following description, the outer metal layer 12b and the slit portion 13 on the second upper surface region 11b of the base material 10 may be referred to as a "flow suppression structure". For convenience of description, the same reference numeral as the bonding layer 70 may be used to the bonding member.

[0032] 7A to 7D are schematic diagrams for explaining that the flow of the bonding member 70 may occur when there is no flow suppression structure. In FIG. 7A to FIG. 7D, the occurrence of solder balls will be explained as an example. The inner metal layer 12a functions as a metal layer to which the bonding member 70 is attached. Consider a case where the outer metal layer 12b is not present outside the inner metal layer 12a when the lid 20 is bonded to the base material 10. In this case, the bonding member 70 attached to the inner metal layer 12a protrudes from the inner metal layer 12a as the area in contact with the first lid-side metal layer 21a increases, and tends to flow and spread outward from the outer edge of the lid 20 in a plan view. When the gap between the base material 10 and the lid 20 is small, the bonding member 70 in the narrow space tends to spread outward from the outer edge of the lid 20 due to the capillary phenomenon. As shown in FIG. 7C, a part of the bonding member 70 that flows outward from the outer edge of the lid 20 forms a solder ball 71 on the second upper surface region 11b of the base material 10, which is difficult to wet. As a result, as shown in Fig. 7D, one or more solder balls 71 are likely to occur along the outer edge of the lid 20. The solder balls 71 are easily dropped off because they are formed on the second upper surface region 11b of the substrate 10, which is difficult to wet. This may cause an electrical short circuit when the light emitting device is incorporated into a module or the like.

[0033] 8A to 8D are schematic diagrams for explaining that the flow of the bonding member 70 is suppressed when there is a flow suppression structure. In FIG. 8A to FIG. 8D, as an example, suppression of the generation of solder balls is explained. According to the flow suppression structure in this embodiment, the metal layer is not provided in the slit portion 13, and the second upper surface region 11b of the base material 10 is exposed. For this reason, the wettability of the slit portion 13 to the bonding member 70 is smaller than the wettability of the inner metal layer 12a and the outer metal layer 12b to the bonding member 70, and the slit portion 13 is less wettable. For this reason, the slit portion 13 functions as a stopper that suppresses the spread of the bonding member 70. The slit portion 13 makes it possible to keep the amount of the bonding member 70 necessary for sealing on the inner metal layer 12a. In addition, the outer metal layer 12b functions as an absorption layer when the bonding member 70 is surplus. When the bonding member 70 is surplus, it may overflow from the slit portion 13 and spread outward beyond the outer edge of the lid 20. Even in this case, a portion of the bonding member 70 that reaches the outer metal layer 12b spreads and is absorbed by the surface of the outer metal layer 12b as shown in Fig. 8C or 8D. For example, even if the molten bonding member flows out when the lid 20 is bonded to the base material 10 by soldering, the molten metal is absorbed by the surface of the outer metal layer 12b, and thus the occurrence of solder balls can be suppressed.

[0034] Furthermore, the inner portion 21a-1 of the first lid-side metal layer 21a provided on the lower surface region 20a on the lid 20 side exerts a function of wetting and spreading the bonding material 70 spreading on the surface of the inner portion 21a-1. As a result, a part of the bonding material 70 is prevented from protruding from the first lid-side metal layer 21a and scattering and adhering to the first upper surface region 11a of the base material 10, and the reliability of the semiconductor light-emitting element 40 or other electronic components arranged on the first upper surface region 11a can be ensured.

[0035] In this way, the flow suppression structure can appropriately suppress the flow out of the joining member 70. Even if the amount of the joining member 70 is small, the slit portion 13 can suppress the area over which the joining member 70 spreads to a small area, so that poor airtightness is unlikely to occur.

[0036] Modifications of the flow suppressing structure according to the present embodiment will be described with reference to Figures 9 to 12. The flow suppressing structure may further include a second lid-side metal layer or a ridge portion provided on the lid.

[0037] Fig. 9 is a bottom view of the lid 20-1 further having the second lid-side metal layer 21b as viewed from the lower surface region 20a side. Fig. 10 is an enlarged view of the bonding portion between the base material 10 and the lid 20-1. The enlarged portion shown in Fig. 10 corresponds to the enlarged portion shown in Fig. 6.

[0038] The lid 20-1 according to this modification may have a second lid-side metal layer 21b and a lid-side slit portion 22 in a plan view. The second lid-side metal layer 21b is located inside the inner edge of the first lid-side metal layer 21a in the lower surface region 20a, and is parallel to the inner edge of the first lid-side metal layer 21a. The lid-side slit portion 22 is located between the first lid-side metal layer 21a and the second lid-side metal layer 21b. However, the second lid-side metal layer 21b does not need to be formed continuously along the inner edge of the first lid-side metal layer 21a as shown in the figure, and may be partially interrupted. The width of the lid-side slit portion 22 is, for example, 30 μm or more and 500 μm or less. The lid-side slit portion 22 functions as a stopper that suppresses the spread of the bonding member 70, similar to the slit portion 13 of the base material 10. The second lid-side metal layer 21b exerts a function of wetting and spreading the bonding member 70, similar to the outer metal layer 12b of the base material 10.

[0039] Fig. 11 is a bottom view of the lid 20-2 further having the ridge portion 23, as viewed from the side of the lower surface region 20a. Fig. 12 is an enlarged view of the bonding portion between the substrate 10 and the lid 20-2. The enlarged portion shown in Fig. 12 corresponds to the enlarged portion shown in Fig. 6.

[0040] The first lid-side metal layer 21a according to this modification includes an inner portion 21a-1 located on the inside of the inner edge of the inner metal layer 12a in plan view. The lid 20-2 may have a ridge portion 23 that is provided on the inner portion 21a-1 of the first lid-side metal layer 21a in plan view and parallel to the inner edge of the inner metal layer 12a. The ridge portion 23 may be provided at a position, for example, 30 μm to 500 μm away from the inner edge of the inner metal layer 12a. The ridge portion 23 does not need to be formed continuously along the inner edge of the inner metal layer 12a, and may be partially interrupted. The ridge portion 23 may be formed of, for example, platinum, titanium, chromium, or SiO2. The ridge portion 23 functions as a stopper that suppresses the spread of the bonding member 70.

[0041] These modified examples appropriately suppress the occurrence of solder balls while suppressing the effects of solder splattering onto the support surface 15a inside the package, thereby ensuring the reliability of the semiconductor light-emitting element 40 or other electronic components.

[0042] (Submount 30) The submount 30 may have a rectangular parallelepiped shape. However, the shape of the submount 30 is not limited to a rectangular parallelepiped. The submount 30 may be made of, for example, silicon nitride, aluminum nitride, or silicon carbide.

[0043] (Semiconductor light emitting element 40) An example of the semiconductor light-emitting element 40 is a laser diode. For example, a laser diode that emits blue light, a laser diode that emits green light, or a laser diode that emits red light may be used as the semiconductor light-emitting element 40. Also, a laser diode that emits light other than visible light, for example, near-infrared light or ultraviolet light, may be used.

[0044] In this specification, blue light is light having a peak emission wavelength in the range of 420 nm to 494 nm, green light is light having a peak emission wavelength in the range of 495 nm to 570 nm, and red light is light having a peak emission wavelength in the range of 605 nm to 750 nm.

[0045] Examples of semiconductor light-emitting elements that emit blue light or green light include laser diodes that include nitride semiconductors. Examples of nitride semiconductors that can be used include GaN, InGaN, and AlGaN. Examples of semiconductor light-emitting elements that emit red light include those that include InAlGaP, GaInP, GaAs, and AlGaAs semiconductors.

[0046] (Optical member 50) An example of the optical member 50 has a shape of a prism. A prism is a columnar body having a polygonal base. Examples of the base of the columnar body are a triangle, a rectangle, or a pentagon. The shape of the optical member 50 is not limited to a prism. The optical member 50 may be formed of, for example, a light-transmitting material such as glass, plastic, or quartz, or a metal or silicon. The optical member 50 illustrated in FIG. 3 is a triangular prism member and has a reflecting surface 51 and a lower surface 52. The lower surface 52 is a bonding surface that is bonded to the support surface 15a of the base material 10.

[0047] The optical member 50 has a reflecting surface 51 that reflects light emitted from the semiconductor light emitting element 40 in a direction parallel to the support surface 15a toward the light-transmitting region of the lid 20. The reflecting surface 51 is an inclined surface that is inclined with respect to the lower surface 52. The reflecting surface 51 is inclined with respect to the lower surface 52 at an inclination angle of, for example, 25° to 65°. In the example of the light emitting device 100 shown in the figure, the reflecting surface 51 is inclined with respect to the lower surface 52 at an inclination angle of 45°. The reflecting surface 51 may be a partial reflecting surface that transmits a part of the incident light and reflects the rest. The reflecting surface 51 may be formed, for example, by providing a light reflection control film that reflects the incident light on a light-transmitting material. The light reflection control film may be formed of a metal film such as Ag or Al. Alternatively, the light reflection control film may be a dielectric multilayer film formed of Ta2O5 / SiO2, TiO2 / SiO2, Nb2O5 / SiO2, or the like.

[0048] Light emitted from the semiconductor light emitting element 40 in a direction parallel to the support surface 15a of the base material 10 (X direction in the figure) is reflected upward (Z direction in the figure) by the reflective surface 51 of the optical member 50. The light emitting device 100 emits the light reflected by the reflective surface 51 to the outside of the package P from the light-transmitting region of the lid 20.

[0049] The light emitting device 100 in this embodiment may include a plurality of semiconductor light emitting elements 40. FIG. 13 is a plan view of the light emitting device 100 in which a plurality of semiconductor light emitting elements 40 are arranged, with the cover removed. FIG. 13 illustrates three semiconductor light emitting elements 40. The number of semiconductor light emitting elements 40 is not limited to this, and may be two or four or more. The three semiconductor light emitting elements 40 may emit light having different peak wavelengths selected from blue, green, and red, for example. In FIG. 13, the optical member 50 may have three reflective surfaces 51 that respectively reflect the light emitted from the three semiconductor light emitting elements 40. The reflective surfaces 51 may be three by using three optical members, or the reflective area may be divided by using one optical member to provide three reflective surfaces 51. Such a light emitting device may be used as a light source for a display device, for example.

[0050] (Example of a Manufacturing Method for the Light Emitting Device 100) A manufacturing method for the light emitting device 100 in this embodiment may include step (A) of preparing a base material and a lid, step (B) of arranging a semiconductor light emitting element on a first upper surface region of the base material, step (C) of attaching a bonding material to the inner metal layer, and step (D) of bonding the lid and base material via the bonding material.

[0051] In step (A), a substrate 10 having a first upper surface region 11a and a second upper surface region 11b surrounding the first upper surface region 11a in a plan view is prepared. Next, an inner metal layer 12a and an outer metal layer 12b parallel to the outer edge of the inner metal layer 12a are formed on the second upper surface region 11b of the substrate 10 by, for example, electrolytic plating or vapor deposition. At this time, a slit portion 13 is formed between the inner metal layer 12a and the outer metal layer 12b by masking a portion of the second upper surface region 11b where the metal film is not to be formed with, for example, a resist material.

[0052] When the lid 20 is bonded to the base material 10, a first lid-side metal layer 21a is formed on a portion of the lower surface region 20a of the lid 20 facing the inner metal layer 12a by, for example, electrolytic plating or vapor deposition.

[0053] In step (B), the submount 30 to which the semiconductor light emitting element 40 is bonded, and the optical member 50 are disposed on the first upper surface region 11a of the base material 10.

[0054] In step (C), a bonding member 70 (for example, solder) is applied to the inner metal layer 12a of the base material 10. The bonding member 70 may be applied to the first lid-side metal layer 21a.

[0055] In step (D), the lid 20 and the base material 10 are joined via the joining member 70 by, for example, brazing. Through the above steps, the light emitting device 100 is obtained.

[0056] <Second embodiment> A light emitting device according to a second embodiment of the present disclosure will be described with reference to Figures 14 to 19. The light emitting device according to the second embodiment differs from the light emitting device according to the first embodiment in that light emitted from the semiconductor light emitting element is emitted to the side of the package. Below, the differences from the light emitting device according to the first embodiment will be mainly described.

[0057] Fig. 14 is an exploded perspective view of the light emitting device 101 according to the second embodiment. Fig. 15 is a plan view of the light emitting device 101 without the lid 20-3 in a plan view. Fig. 16 is a cross-sectional view of the light emitting device 101 parallel to the XZ plane. Fig. 17 is an enlarged view of the joint between the base material 10-1 and the lid 20-3.

[0058] The light emitting device 101 according to this embodiment includes a base material 10-1, a lid 20-3, a submount 30, and a semiconductor light emitting element 40 supported by the submount 30. The base material 10-1 has a support surface 15a including a first upper surface region 11a and a second upper surface region 11b located outside the first upper surface region 11a. The lid 20-3 has a sidewall portion 20-3a supported by the support surface 15a and an upper surface portion 20-3b located on the sidewall portion 20-3a. The illustrated lid 20-3 is a member in which the sidewall portion 20-3a and the upper surface portion 20-3b are integrally formed, but is not limited thereto. The sidewall portion 20-3a and the upper surface portion 20-3b may be separate members, and the upper surface portion 20-3b may be joined to the upper surface of the sidewall portion 20-3a. The sidewall portion 20-3a has a light transmissive region that transmits light emitted from the semiconductor light emitting element 40. At least the light-transmitting region of the lid 20-3 may be made of a light-transmitting material such as sapphire, glass, plastic, quartz, etc. The other portions do not have to be made of a light-transmitting material.

[0059] In the light emitting device 101, light emitted from the semiconductor light emitting element 40 in a direction parallel to the support surface 15a is emitted laterally to the outside of the package P from the light transmitting region of the sidewall portion 20-3a.

[0060] The base material 10-1 has an inner metal layer 12a, an outer metal layer 12b, and a slit portion 13 in a second upper surface region 11b. The side wall portion 20-3a has a lower surface region 20a on a joining surface that is joined to the support surface 15a of the base material 10-1. The flow suppression structure in this embodiment has substantially the same structure and function as the flow suppression structure in the first embodiment, and detailed description is omitted. According to the light emitting device 101 of this embodiment, it is possible to appropriately suppress the occurrence of solder balls, similar to the first embodiment.

[0061] FIG. 18 is a plan view of a substrate 10-2 further having another inner metal layer 12c located inside the inner edge of the inner metal layer 12a.

[0062] The base material 10-2 may have another inner metal layer 12c located on the support surface 15a inside the inner edge of the inner metal layer 12a in a plan view and parallel to the inner edge of the inner metal layer 12a. Another slit portion 13-1 may be located between the inner metal layer 12a and the other inner metal layer 12c. The other slit portion 13-1 functions as a stopper that suppresses the spread of the bonding member 70, similar to the slit portion 13. The other inner metal layer 12c functions as an absorption layer when the bonding member 70 is surplus, similar to the outer metal layer 12b. This flow suppression structure makes it possible to appropriately suppress the bonding member 70 from spreading toward the first upper surface region 11a of the support surface 15a.

[0063] 19 is a plan view of a light emitting device 101 in which a plurality of semiconductor light emitting elements 40 are arranged, with the lid removed. The light emitting device 101 in this embodiment may also include a plurality of semiconductor light emitting elements 40, as in the first embodiment. The three semiconductor light emitting elements 40 shown in the figure may emit light having different peak wavelengths selected from blue, green, and red, for example. Such a light emitting device may be used, for example, as a light source for a display device.

[0064] The flow suppression structure according to the embodiment of the present disclosure is not limited to semiconductor light emitting devices, but may also be applied to packages that encapsulate other electronic components such as light receiving elements. [Industrial Applicability]

[0065] The light emitting device of the present disclosure can be used in, for example, a head mounted display, a projector, a display, or a lighting fixture. [Explanation of symbols]

[0066] 10, 10-1, 10-2: Base material 10a: bottom 10b: Side wall part 11a: 1st top surface area 11b: Second top area 12a: Inner metal layer 12b: Outer metal layer 12c: Inner metal layer 13, 13-1: Slit section 14: Branch 15a: Support surface 15b:Top surface 20, 20-1, 20-2, 20-3: Lid 20-3a: Side wall part 20-3b:Top part 20a: Bottom area 21a: 1st lid side metal layer 21a-1:Inner part 21b: 2nd lid side metal layer 22: Lid side slit 23: Ridge 30: Submount 40: Semiconductor light emitting element 50: Optical components 51: Reflective surface 52: Bottom surface 70: Bonding layer (bonding material) 71: Solder ball 100, 101: Light emitting device P: Package V: Sealed space

Claims

1. A semiconductor light emitting element; a package that encapsulates the semiconductor light emitting device; Equipped with The package includes a base material and a lid joined to the base material, The substrate is a first upper surface region that directly or indirectly supports the semiconductor light emitting device; a second upper surface region surrounding the first upper surface region in a plan view seen from a normal direction of the first upper surface region; having the package has an inner metal layer located on the second top surface region of the base, an outer metal layer parallel to an outer edge of the inner metal layer, and a slit portion located between the inner metal layer and the outer metal layer on the second top surface region; In the plan view, an inner edge of the inner metal layer is located inside an outer edge of the lid, In the plan view, at least a part of an outer edge of the outer metal layer is located outside an outer edge of the lid, The lid is a lower surface region opposed to the first and second upper surface regions of the substrate; a first lid-side metal layer including an inner portion located on the inner side of an inner edge of the inner metal layer in a portion of the lower surface region facing the inner metal layer in the plan view; The light emitting device is bonded to the base material by a bonding member provided on the inner metal layer.

2. The light emitting device according to claim 1 , wherein an outer edge of the inner metal layer is located inside an outer edge of the lid, and an outer edge of the outer metal layer is located outside an outer edge of the lid.

3. The light emitting device according to claim 2 , wherein the width of the slit portion is not less than 30 μm and not more than 500 μm.

4. 4. The light emitting device according to claim 2 or 3, wherein the inner metal layer and the outer metal layer are connected by one or more branches.

5. The light emitting device according to claim 1 , wherein the joining member is a solder.

6. A light-emitting device as described in any one of claims 1 to 5, wherein the package hermetically seals the semiconductor light-emitting element by bonding the first lid side metal layer and the inner metal layer together with a bonding layer formed from the bonding material.

7. A semiconductor light emitting device; a package that encapsulates the semiconductor light emitting device; Equipped with The package includes a base material and a lid joined to the base material, The substrate is a first upper surface region that directly or indirectly supports the semiconductor light emitting device; a second upper surface region surrounding the first upper surface region in a plan view seen from a normal direction of the first upper surface region; having the package has an inner metal layer located on the second top surface region of the base, an outer metal layer parallel to an outer edge of the inner metal layer, and a slit portion located between the inner metal layer and the outer metal layer on the second top surface region; In the plan view, an inner edge of the inner metal layer is located inside an outer edge of the lid, In the plan view, at least a part of an outer edge of the outer metal layer is located outside an outer edge of the lid, The lid is a lower surface region of the substrate opposite the first and second upper surface regions; a first lid-side metal layer located in a portion of the lower surface region facing the inner metal layer; a second lid-side metal layer located inside an inner edge of the first lid-side metal layer in the lower surface region and extending parallel to the inner edge of the first lid-side metal layer in the plan view; a lid-side slit portion between the first lid-side metal layer and the second lid-side metal layer; having The light emitting device is bonded to the base material by a bonding member provided on the inner metal layer.

8. The light emitting device according to claim 1 , wherein the lid has a ridge portion provided on the inner portion of the first lid-side metal layer in the plan view and extending parallel to an inner edge of the inner metal layer.

9. The light emitting device according to claim 1 , wherein the package has a step between the first upper surface region and the second upper surface region.

10. The base material has a bottom portion having a support surface and a sidewall portion supported by the support surface; the first upper surface region is located on the support surface, and the second upper surface region is located on an upper surface of the side wall portion located above the support surface, the inner metal layer and the outer metal layer are provided on the upper surface of the sidewall portion, The light emitting device according to claim 1 , wherein the lid has a light transmitting region through which light emitted from the semiconductor light emitting element passes.

11. A semiconductor light emitting device; a package that encapsulates the semiconductor light emitting device; Equipped with The package includes a base material and a lid joined to the base material, The substrate is a first upper surface region that directly or indirectly supports the semiconductor light emitting device; a second upper surface region surrounding the first upper surface region in a plan view seen from a normal direction of the first upper surface region; a support surface including the first upper surface region and the second upper surface region; having the package has an inner metal layer located on the second top surface region of the base, an outer metal layer parallel to an outer edge of the inner metal layer, and a slit portion located between the inner metal layer and the outer metal layer on the second top surface region; In the plan view, an inner edge of the inner metal layer is located inside an outer edge of the lid, In the plan view, at least a part of an outer edge of the outer metal layer is located outside an outer edge of the lid, the lid has a side wall portion supported by the support surface and an upper surface portion located on the side wall portion, and is joined to the base material by a joining member provided on the inner metal layer; the side wall portion has a light-transmitting region through which light emitted from the semiconductor light-emitting element passes, A light emitting device, wherein light emitted from the semiconductor light emitting element in a direction parallel to the support surface is emitted from the light transmitting region to the outside of the package.

12. The substrate is a second inner metal layer that is located on the support surface inward from the inner edge of the inner metal layer in the plan view and that is parallel to the inner edge of the inner metal layer; The light emitting device according to claim 11 , further comprising another slit portion between the inner metal layer and the other inner metal layer.

13. a step of preparing a base material having, in a plan view, a first top surface region and a second top surface region surrounding the first top surface region, and including an inner metal layer located on the second top surface region, an outer metal layer parallel to an outer edge of the inner metal layer, and a slit portion located between the inner metal layer and the outer metal layer on the second top surface region; and a lid having a bottom surface region facing the first and second top surface regions of the base material, and further including a first lid-side metal layer including an inner portion located more inward than an inner edge of the inner metal layer in the plan view, in a portion of the bottom surface region facing the inner metal layer; disposing a semiconductor light emitting device on the first top surface region of the substrate; applying a bonding member to the inner metal layer; a step of joining the lid and the base material via the joining member; A method for manufacturing a light emitting device, comprising:

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