Method for Producing Layers Using Mixed Solvent Systems - Patent application

Abstract

The present invention provides a method for producing a layer of crystalline A / M / X material, the crystalline A / M / X material having the formula [A] a [M] b [X] c wherein [M] comprises one or more first cations, wherein the one or more first cations are metal or semimetal cations, [A] comprises one or more second cations, [X] comprises one or more halide anions, a is an integer from 1 to 6, b is an integer from 1 to 6, and c is an integer from 1 to 18, the method comprising disposing a precursor composition on a substrate, the precursor composition comprising (a) a first precursor compound comprising first cations (M) that are metal or semimetal cations, and (b) a solvent, the solvent comprising (i) a nonpolar organic solvent that is a hydrocarbon solvent, a chlorohydrocarbon solvent, or an ether solvent, and (ii) a first organic amine containing at least 3 carbon atoms. Compositions useful in the methods of the invention are also described.

Description

[Technical field]

[0001] The present invention relates to methods of producing layers of crystalline A / M / X material. The present invention also relates to methods of producing semiconductor devices, as well as compositions useful in the described methods.

[0002] The project leading to this application has received funding from the European Union's Horizon 2020 research and innovation programme under Marie Sklodowska-Curie grant agreement No. 706552. The project leading to this application has received funding from the European Union's Horizon 2020 research and innovation programme under Marie Sklodowska-Curie grant agreement No. 653184. [Background technology]

[0003] Crystalline A / M / X materials, such as metal halide perovskites, are extremely promising photoactive materials. They are used to fabricate a variety of optoelectronic devices, such as solar cells, light-emitting diodes and lasers. Photovoltaic devices based on perovskite materials are the most established of the metal halide perovskite-based technologies to date, achieving certified power conversion efficiencies approaching 23% in laboratory-scale devices. The ease of preparation of these materials is one of their most attractive properties, and high-quality crystalline layers are produced by simple methods, such as spin-coating.

[0004] One of the disadvantages of solution processing of these materials, and a potential barrier to scale-up and commercialization of this technology, is the use of solvents that have high boiling points, high coordination, and high toxicity. These types of strong solvents are necessary for the complexation and subsequent dissolution of the lead halide salts used as precursors to the perovskite materials. The most widely used solvents in solution processing and crystal growth of lead halide perovskites are dimethylformamide (DMF), dimethylsulfoxide (DMSO), and gamma-butyrolactone (GBL), or mixtures thereof. Other solvents that have been used include dimethylacetamide (DMA) and N-methyl-2-pyrrolidone (NMP). In addition to the toxicity issues associated with the use of DMF, it has been found that the decomposition of this solvent can directly affect the colloid distribution in the perovskite precursor solution and therefore the optoelectronic properties of the films.

[0005] Attempts have been made to reduce the solvent toxicity of A / M / X material precursor solutions. One approach is to reduce the total volume of solvents, such as DMF and DMSO, by substituting less toxic co-solvents. WO2017 / 153752A1 describes a solvent system of reduced toxicity low boiling compounds, including alkylamines, such as methylamine (MA), which are bubbled into the host solvent acetonitrile (ACN) to promote the dissolution of the perovskite salt.

[0006] It is often desirable to deposit crystalline A / M / X materials, such as perovskites, together with polymers or small organic molecules (e.g., in bulk heterojunction or bulk heterostructure devices). To do this effectively, it is preferable to solubilize the A / M / X material precursor with the polymer or small organic molecule. A major difficulty in doing this is that the organic materials (i.e., polymers or small organic molecules) typically have low solubility in the solvents (e.g., DMF) used for the A / M / X materials or perovskites. The reduced solubility of the organic materials (e.g., fullerene derivative PCBM) and polymers (e.g., PMMA) in the perovskite solvent typically causes the organic species to precipitate out of solution at relatively low concentrations. This then results in poor film formation during crystallization of the perovskite material. Summary of the Invention [Problem to be solved by the invention]

[0007] A solution to this problem would be to use a solvent in which both the perovskite precursor material and the organic material are soluble. However, this is not easy to implement since the perovskite precursor material is typically soluble in highly polar protic solvents, whereas the organic material is typically soluble in non-polar solvents. There is a need to develop a solvent system that can solubilize the perovskite precursor compound together with the organic material, e.g., a polymer. [Means for solving the problem]

[0008] The inventors have found that a particular solvent system comprising (i) a non-polar organic solvent and (ii) a first organic amine comprising at least three carbon atoms can solubilize both a first precursor compound comprising a metal cation and an organic material. This solvent system can advantageously be used to deposit both neat films of A / M / X materials and bulk heterojunction films comprising A / M / X materials and organic materials. The solvent system also does not contain toxic high boiling point solvents such as DMF and DMSO. Thus, the solvent system used in the method of the present invention provides a significant advance in the development of flexible methods for depositing A / M / X materials (e.g., perovskites) alone or in combination with organic materials.

[0009] The present invention relates to a method for producing a layer of a crystalline A / M / X material, the crystalline A / M / X material having the formula [A] a [M] b [X] c wherein [M] comprises one or more first cations, the one or more first cations being metal cations or metalloid cations, [A] comprises one or more second cations, [X] comprises one or more halide anions, a is an integer of 1 to 6, b is an integer of 1 to 6, and c is an integer of 1 to 18; The method includes disposing a precursor composition on a substrate, the precursor composition including (a) a first precursor compound including a first cation (M), the first cation being a metal cation or a metalloid cation; and (b) a solvent; The method includes the step of: (i) providing a non-polar organic solvent that is a hydrocarbon solvent, a chlorohydrocarbon solvent, or an ether solvent; and (ii) providing a first organic amine that contains at least three carbon atoms.

[0010] The present invention also provides a method of manufacturing a semiconductor device, said method comprising producing a layer of crystalline A / M / X material as defined herein.

[0011] Furthermore, the present invention provides (i) Formula MX n (Wherein, M is Ca 2+ , Sr2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Yb 2+ ,EU 2+ , Bi 3+ , Sb 3+ , Pd 4+ , W 4+ , Re 4+ , Os 4+ , Ir 4+ , Pt 4+ , Sn 4+ , Pb 4+ , Ge 4+ , or Te 4+ and preferably Cu 2+ , Pb 2+ , Ge 2+ , or Sn 2+ and X is I - , Br - , Cl - , or F - and n is 2, 3, or 4; (ii) a compound of formula AX, where A is (R 1 NH3) + , (NR 2 4) + , and (H2N-C(R 1 )=NH2) + and R 1 is H or unsubstituted C 1-6 is an alkyl group, R 2 are unsubstituted C 1-6 is an alkyl group, and X is I - , Br - , Cl - , or F - and (iii) a non-polar organic solvent which is a hydrocarbon solvent, a chlorohydrocarbon solvent, or an ether solvent; (iv) a first organic amine containing at least 3 carbon atoms; and A composition comprising: [Brief description of the drawings]

[0012] [Figure 1] Figure 1 shows the current-voltage characteristics of a device containing methylammonium / butylammonium lead triiodide perovskite deposited from a butylamine / toluene solution (50:50 v / v). The perovskite appears to have the Ruddlesden-Popper chemical structure of MAn-1BA2PbnI3n+1, where MA is methylammonium and BA is butylammonium. [Diagram 2] Figure 1 shows the absorption of perovskite film MAn-1BA2PbnI3n+1 deposited from a butylamine / toluene solvent (50:50 v / v). [Diagram 3] (a) shows the x-ray diffraction patterns of MAPbI3 or MAn-1BA2PbnI3n+1 films deposited from acetonitrile / methylamine (ACN / MA) compound solvents with various amounts of butylamine (BA) added. The total molarity of all solutions was kept at 0.5 M. All films were annealed at 100 °C for 30 min. (b) shows the corresponding photographs of the crystallized films. [Figure 4] (a) and (b) show x-ray diffraction patterns of perovskite films deposited from MA:BA / toluene solvent before (a) and after (b) exposure to MA vapor, and (c) and (d) show absorption spectra of the perovskite films in (a) and (b). There is a transition from MAn-1BA2PbnI3n+1 perovskite films in a and c to MAPbI3 films in b and d. [Diagram 5] Top-view SEM images of MAPbI3 perovskite films deposited from MA:BA / toluene solvents with increasing concentrations of PCBM: (a) to (i) 0 mg / ml, 1 mg / ml, 5 mg / ml, 10 mg / ml, 15 mg / ml, 20 mg / ml, 25 mg / ml, 30 mg / ml, and 40 mg / ml, respectively. All scale bars represent 5 μm. [Figure 6]Time-resolved photoluminescence decay of CH3NH3PbI3 films deposited from MA:BA / toluene solvent with a defined amount of PCBM added to the precursor solution. Notably, the PL decay of CH3NH3PbI3 without added PCBM is faster than that of the film with 5 mg / ml PCBM added. [Figure 7] The solar cell performance parameters (short circuit current density (Jsc), power conversion efficiency (Eff.(%)), open circuit voltage (Voc, and fill factor (FF)) of solar cells measured under simulated air mass 1.5 sunlight with irradiance of 100 mW cm-2 on CH3NH3PbI3 absorber layer with perovskite film processed from MA:BA / toluene solvent with the specified concentration of PCBM added to the precursor solution in mg / ml of solution shown on the x-axis. [Figure 8] Current-voltage characteristics and steady-state efficiency of Champion CH3NH3PbI3 devices fabricated from MA:BA / toluene solvent with (bottom) and without (top) PCBM addition. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] definition The term "crystalline A / M / X material", as used herein, means a material with a crystalline structure that includes one or more A ions, one or more M ions, and one or more X ions. The A and M ions are typically cations. The X ions are typically anions. A / M / X materials typically do not include additional types of ions.

[0014] The term "perovskite" as used herein means a material having a crystal structure related to that of CaTiO3 or a layer of material comprising a layer having a structure related to that of CaTiO3. The structure of CaTiO3 can be represented by the formula ABX3, where A and B are cations of different sizes and X is an anion. In the unit cell, the A cations are at (0,0,0), the B cations are at (1 / 2,1 / 2,1 / 2), and the X anions are at (1 / 2,1 / 2,0). The A cations are usually larger than the B cations. As A, B, and X vary, the different ion sizes can distort the structure of the perovskite material, leading to a less symmetric distorted structure away from that of CaTiO3. The symmetry will also be reduced if the material comprises a layer having a structure related to that of CaTiO3. Materials comprising layers of perovskite materials are well known. For example, a structure of a material having a K2NiF4 type structure comprises a layer of perovskite material. Those skilled in the art will understand that perovskite materials can be represented by the formula [A][B][X]3, where [A] is at least one cation, [B] is at least one cation, and [X] is at least one anion. When a perovskite contains more than one A cation, the different A cations may be regularly or irregularly distributed on the A sites. When a perovskite contains more than one B cation, the different B cations may be regularly or irregularly distributed on the B sites. When a perovskite contains more than one X anion, the different X anions may be regularly or irregularly distributed on the X sites. The symmetry of a perovskite containing more than one A cation, more than one B cation, or more than one X anion will be less than that of CaTiO3. In layered perovskites, the stoichiometry between A, B, and X ions may vary. For example, if the ionic radius of the A cation is too large to fit within the 3D perovskite structure, then the [A]2[B][X]4 structure may be adopted. The term "perovskite" also encompasses A / M / X materials that adopt the Ruddleson-Popper phase.By Ruddleson-Popper phase is meant perovskites that have a mixture of layered and 3D components. Such perovskites have crystal structure A. n-1 A'2M n X 3n+1 where A and A' are different cations and n is an integer from 1 to 8, or from 2 to 6. The term "mixed 2D and 3D" perovskite includes AMX3 and A n-1 A'2M n X 3n+1 It is used to refer to a perovskite film in which both regions or domains of the perovskite phase are present.

[0015] The term "metal halide perovskite," as used herein, means a perovskite whose formula contains at least one metal cation and at least one halide anion.

[0016] The term "hexahalometalate" as used herein refers to a compound of the formula [MX6] n- where M is a metal atom, each X is independently a halide anion, and n is an integer from 1 to 4. The hexahalometalate may have the structure A2MX6.

[0017] The term "monocation" as used herein refers to any cation having one positive charge, i.e., a cation of formula A + where A is any moiety, e.g., a metal atom or an organic moiety. The term "dication" as used herein refers to any cation that has two positive charges, i.e., a cation of formula A 2+ where A is any moiety, e.g., a metal atom or an organic moiety. The term "trication" as used herein refers to any cation having two positive charges, i.e., a cation of formula A 3+where A is any moiety, e.g., a metal atom or an organic moiety. The term "tetracation" as used herein refers to any cation having four positive charges, i.e., a cation of formula A 4+ where A is any moiety, for example a metal atom, and means a cation of the formula:

[0018] The term "alkyl" as used herein means a straight or branched chain saturated hydrocarbon group. An alkyl group is a C 1~20 Alkyl group, C 1~14 Alkyl group, C 1~10 Alkyl group, C 1~6 Alkyl group or C 1~4 C may be an alkyl group. 1~10 Examples of alkyl groups are methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, or decyl. 1~6 Examples of alkyl groups are methyl, ethyl, propyl, butyl, pentyl, or hexyl. 1~4 Examples of alkyl groups are methyl, ethyl, i-propyl, n-propyl, t-butyl, s-butyl, or n-butyl. When the term "alkyl" is used anywhere in this specification without a prefix specifying the number of carbon atoms, the alkyl has from 1 to 6 carbons (as well as any other organic group mentioned herein).

[0019] The term "cycloalkyl" as used herein means a saturated or partially unsaturated cyclic hydrocarbon group. A cycloalkyl group is a C 3~10 Cycloalkyl groups, C 3~8 Cycloalkyl group or C 3~6 It may be a cycloalkyl group. 3~8 Examples of cycloalkyl groups include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cyclohexenyl, cyclohexa-1,3-dienyl, cycloheptyl, and cyclooctyl. 3~6Examples of cycloalkyl groups include cyclopropyl, cyclobutyl, cyclopentyl, and cyclohexyl.

[0020] The term "alkenyl" as used herein means a straight or branched chain hydrocarbon group containing one or more double bonds. An alkenyl group is a C 2~20 Alkenyl group, C 2~14 Alkenyl group, C 2~10 Alkenyl group, C 2~6 Alkenyl group, or C 2~4 C may be an alkenyl group. 2~10 Examples of alkenyl groups are ethenyl (vinyl), propenyl, butenyl, pentenyl, hexenyl, heptenyl, octenyl, nonenyl, and decenyl. 2~6 Examples of alkenyl groups are ethenyl, propenyl, butenyl, pentenyl, and hexenyl. 2~4 Examples of alkenyl groups are ethenyl, i-propenyl, n-propenyl, s-butenyl, and n-butenyl. Alkenyl groups typically contain one or two double bonds.

[0021] The term "alkynyl" as used herein means a straight or branched chain hydrocarbon group containing one or more triple bonds. An alkynyl group is a C 2~20 Alkynyl group, C 2~14 Alkynyl group, C 2~10 Alkynyl group, C 2~6 Alkynyl group or C 2~4 It may be an alkynyl group. 2~10 Examples of alkynyl groups are ethynyl, propynyl, butynyl, pentynyl, hexynyl, heptynyl, octynyl, nonynyl, and decynyl. 1~6 Examples of alkynyl groups are ethynyl, propynyl, butynyl, pentynyl, and hexynyl. Alkynyl groups typically contain one or two triple bonds.

[0022] The term "aryl" as used herein means a monocyclic, bicyclic or polycyclic aromatic ring containing 6 to 14 carbon atoms, typically 6 to 10 carbon atoms, in the ring portion. Examples include phenyl, naphthyl, indenyl, indanyl, anthracenyl, and pyrenyl. The term "aryl group" as used herein includes heteroaryl groups. The term "heteroaryl" as used herein means a monocyclic or bicyclic aromatic heterocycle, typically containing 6 to 10 atoms in the ring portion, including one or more heteroatoms. Heteroaryl groups are generally 5- or 6-membered rings and contain at least one heteroatom selected from O, S, N, P, Se, and Si. For example, they may contain 1, 2, or 3 heteroatoms. Examples of heteroaryl groups include pyridyl, pyrazinyl, pyrimidinyl, pyridazinyl, furanyl, thienyl, pyrazolidinyl, pyrrolyl, oxazolyl, oxadiazolyl, isoxazolyl, thiadiazolyl, thiazolyl, isothiazolyl, imidazolyl, pyrazolyl, quinolyl, and isoquinolyl.

[0023] The term "substituted" as used herein in the context of a substituted organic group includes C 1~10 Alkyl, aryl (as defined herein), cyano, amino, nitro, C 1~10 Alkylamino, di(C 1~10 ) Alkylamino, arylamino, diarylamino, aryl(C 1~10 ) Alkylamino, Amido, Acyl Amido, Hydroxy, Oxo, Halo, Carboxy, Ester, Acyl, Acyloxy, C 1~10 Alkoxy, aryloxy, halo(C 1~10 ) Alkyl, Sulfonic Acid, Thiol, C 1~10It means an organic group having one or more substituents selected from alkylthio, arylthio, sulfonyl, phosphoric acid, phosphoric acid ester, phosphonic acid, and phosphonic acid ester. Examples of substituted alkyl groups include haloalkyl groups, perhaloalkyl groups, hydroxyalkyl groups, aminoalkyl groups, alkoxyalkyl groups, and alkaryl groups. When a group is substituted, it may have one, two, or three substituents. For example, a substituted group may have one or two substituents.

[0024] The term "porous" as used herein refers to a material having pores disposed therein. Thus, for example, in a porous scaffold material, the pores are the volume of the scaffold that is free of scaffold material. The individual pores may be the same or different in size. The size of the pores is defined as the "pore diameter". The limiting size of a pore is the size of the smallest dimension that is taken to be the width of the pore (i.e., the width of a slit-like pore, the diameter of a cylindrical or spherical pore, etc.) in most cases involving porous solids, when no greater precision is available. To avoid misleading changes in scale when comparing cylindrical pores to slit-like pores, the diameter (not the length) of a cylindrical pore should be used as its "pore width" (J. Rouquerol et al., "Recommendations for the Characterization of Porous Solids", Pure & Appl. Chem., Vol. 66, No. 8, pp. 1739-1758, 1994). The following distinctions and definitions have been adopted in previous IUPAC publications (K.S.W. Singh et al., Pure & Appl. Chem., vol. 57, n04, pp. 603-919, 1985, and IUPAC "Manual on Catalyst Characterization", J. Haber, Pure and Appl. Chem., vol. 63, pp. 1227-1246, 1991). Micropores are those with a width (i.e., pore diameter) of less than 2 nm. Mesopores are those with a width (i.e., pore diameter) of 2 nm to 50 nm. Macropores are those with a width (i.e., pore diameter) of more than 50 nm. Additionally, nanopores may be considered to be those with a width (i.e., pore diameter) of less than 1 nm.

[0025] Pores in a material may include "closed" pores as well as open pores. Closed pores are pores that are unconnected cavities in a material, i.e., pores that are isolated in the material and do not connect with other pores, and therefore cannot be reached by fluids (e.g., liquids such as solutions) to which the material is exposed. On the other hand, "open pores" are accessible by such fluids. The concepts of open and closed porosity are discussed in detail in J. Rouquerol et al., "Recommendations for the Characterization of Porous Solids," Pure & Appl. Chem., Vol. 66, No. 8, pp. 1739-1758, 1994.

[0026] Open porosity therefore refers to the fraction of the total volume of a porous material through which fluid flow can effectively occur. It therefore does not include isolated pores. The term "open porosity" is interchangeable with the terms "connected porosity" and "effective porosity" and is commonly shortened in the art to simply "porosity."

[0027] Thus, the term "no open porosity" as used herein refers to a material that has no effective open porosity. Thus, a material that has no open porosity typically has no macropores or mesopores. However, a material that has no open porosity may contain micropores and nanopores. Such micropores and nanopores are typically too small to adversely affect a material in which low porosity is desired.

[0028] The term "dense layer" as used herein means a layer that has no mesoporosity or macroporosity. In some cases, a dense layer may have microporosity or nanoporosity.

[0029] The term "semiconductor device" as used herein means a device that includes a functional element that includes a semiconductor material. This term may be understood to be synonymous with the term "semiconducting device". Examples of semiconductor devices include photovoltaic devices, solar cells, photodetectors, photodiodes, photosensors, color-emitting devices, transistors, photosensitive transistors, phototransistors, solid-state triodes, batteries, battery electrodes, capacitors, supercapacitors, light-emitting devices, lasers, or light-emitting diodes. The term "optoelectronic device" as used herein means a device that provides, controls, or detects light. Light is understood to include any electromagnetic radiation. Examples of optoelectronic devices include photovoltaic devices, photodiodes (including solar cells), phototransistors, photomultipliers, photoresistors, and light-emitting diodes.

[0030] The term "consisting essentially of" means that the composition contains other components in addition to the component that essentially constitutes the composition, provided that the other components do not materially affect the essential properties of the composition. Typically, a composition that consists essentially of a certain component contains 95 wt% or more of that component, or alternatively contains 99 wt% or more of that component.

[0031] method The present invention relates to a method for producing a layer of a crystalline A / M / X material, the crystalline A / M / X material having the formula [A] a [M] b [X] cwherein [M] comprises one or more first cations, the one or more first cations being a metal cation or a metalloid cation, [A] comprises one or more second cations, [X] comprises one or more halide anions, a is an integer from 1 to 6, b is an integer from 1 to 6, and c is an integer from 1 to 18, the method comprising disposing a precursor composition on a substrate, the precursor composition comprising (a) a first precursor compound comprising a first cation (M), the first cation being a metal cation or a metalloid cation, and (b) a solvent, the solvent comprising (i) a non-polar organic solvent, which is a hydrocarbon solvent, a chlorohydrocarbon solvent, or an ether solvent, and (ii) a first organic amine comprising at least 3 carbon atoms.

[0032] Non-polar organic solvents The solvent includes a non-polar organic solvent that is a hydrocarbon solvent, a chlorohydrocarbon solvent, or an ether solvent. A non-polar organic solvent is a solvent that contains organic molecules and is non-polar. A non-polar solvent typically has a dipole moment of 2.0 or less.

[0033] A hydrocarbon solvent is a solvent that contains or consists essentially of a hydrocarbon compound. A hydrocarbon compound is a compound that consists of hydrogen and carbon atoms. A hydrocarbon solvent can be, for example, one or more C 1-6 arenes, optionally substituted with alkyl groups, such as benzene, toluene, xylene (which may be o-xylene, m-xylene, p-xylene or mixtures thereof), cumene, ethylbenzene or trimethylbenzene; alkanes, such as pentane, hexane or heptane; or one or more C 1-6 It may also be a cycloalkane, such as cyclopentane or cyclohexane, optionally substituted with an alkyl group.

[0034] Chlorohydrocarbon solvents are solvents that contain or consist essentially of chlorohydrocarbon compounds. Chlorohydrocarbon compounds are compounds that consist of hydrogen atoms, carbon atoms and one or more chlorine atoms. Hydrocarbon solvents include, for example, C1-6 Alkanes, such as dichloromethane, trichloromethane (chloroform) or tetrachloromethane; or one or more C 1-6 It may also be an arene substituted with one or more chlorine atoms, such as chlorobenzene or dichlorobenzene (which may be o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene or mixtures thereof), which may be optionally substituted with alkyl groups.

[0035] An ether solvent is a solvent that comprises or consists essentially of an ether compound. An ether compound (as used herein) is a compound consisting of a hydrogen atom, a carbon atom, and one or more oxygen atoms, each of which is bonded to two separate carbon atoms. An ether solvent may, for example, be a compound of the formula ROR, where each R is independently an unsubstituted C 1-6 Alkyl group or one or more unsubstituted C 1-6 arene groups optionally substituted with alkyl groups, where the two R groups may optionally be joined together to form a ring, and where there may optionally be a second O-group between the two R groups. Examples of ether solvents include anisole (methoxybenzene), diethyl ether, ethyl methyl ether, ethyl tert-butyl ether, diisopropyl ether, tetrahydrofuran, tetrahydropyran, and 1,4-dioxane.

[0036] Typically, the non-polar organic solvent is toluene, benzene, xylene, chlorobenzene, dichlorobenzene, chloroform, anisole, hexane, pentane, cyclohexane or cyclopentane.

[0037] In many cases, the solvent comprises a non-polar organic solvent which is a hydrocarbon solvent or a chlorohydrocarbon solvent. Preferably, the non-polar organic solvent is toluene or chlorobenzene. More preferably, the non-polar organic solvent is toluene.

[0038] First organic amine The solvent comprises (i) a non-polar organic solvent and (ii) a first organic amine comprising at least three carbon atoms. The solvent typically comprises greater than 60 wt. %, e.g., greater than 70 wt. %, of the non-polar organic solvent and the first organic amine, based on the total weight of the solvent. The solvent may comprise greater than 40 wt. %, e.g., greater than 60 wt. %, of the non-polar organic solvent, based on the total weight of the solvent.

[0039] The first organic amine is typically an organic amine of formula RNH2, where R is an organic group containing at least 3 carbons. R typically has a molecular weight of less than 200 g / mol. R may be a hydrocarbyl group, i.e., a group consisting of hydrogen and carbon atoms.

[0040] The first organic amine is typically represented by the formula R A a first alkylamine of formula NH2 or a first arylamine of formula ArNH2, where R A C is optionally substituted with a phenyl group 3-20 Ar is an alkyl group with 1 to 3 C 1-6 It is a phenyl group optionally substituted with an alkyl group.

[0041] The first arylamine is typically an aniline.

[0042] The first organic amine is preferably of formula R A a first alkylamine which is a compound of formula R A C is optionally substituted with a phenyl group 3-20 R is an alkyl group. A is typically unsubstituted C 3-10 The alkyl group is, for example, n-propyl, isopropyl, n-butyl, pentyl or hexyl. The first alkylamine is typically propylamine, butylamine, pentylamine, hexylamine or phenylethylamine. Preferably, the first alkylamine is butylamine.

[0043] The solvent typically comprises a non-polar organic solvent and a first organic amine (e.g., a first alkylamine) in a volume ratio (non-polar organic solvent):(first organic amine) of 40:1 to 1:2. In some cases, the volume ratio (non-polar organic solvent):(first organic amine) is about 1:1, for example, 3:2 to 2:3. Preferably, the volume ratio (non-polar organic solvent):(first organic amine) is 20:1 to 4:1, more preferably 10:1 to 5:1. For example, the volume of the first organic amine per ml of non-polar organic solvent may be 10 μl to 2000 μl, for example, 50 μl to 300 μl.

[0044] Many A / M / X materials, such as organic mixed halide perovskites, contain alkylammonium ions, such as methylammonium. Thus, known precursor compositions of A / M / X materials that contain alkylammonium ions typically contain alkylammonium ions. For example, a precursor solution may contain a solution of an alkylammonium halide, such as methylammonium iodide. However, it should be noted that such precursor solutions do not contain solvents that contain alkylamines or organic amines. Rather, such precursor solutions contain alkylammonium ions that are protonated alkylamines (or organic ammonium ions that are protonated organic amines). Furthermore, the alkylammonium ions in such known precursor solutions are accompanied by a molar equivalent of a halide counterion.

[0045] Thus, the precursor composition in the method of the present invention comprises an organic amine, e.g., an alkylamine, where the organic amine is typically not protonated. Of course, protonated alkylammonium ions may also be present, e.g., if part of the second precursor compound, but these are in addition to the solvent organic amine. Furthermore, the precursor composition including the solvent typically has a molar ratio of (organic amine):(halide ion from alkylammonium halide compound) greater than 100:100, e.g. greater than 105:100, or greater than 110:100. The molar ratio may be from 105:100 to 200:100.

[0046] Typically, the solvent in the method of the present invention is prepared by adding a first organic amine to a non-polar organic solvent as the first organic amine in liquid or solid form. Thus, the method may further include preparing the solvent by adding the first organic amine to a non-polar organic solvent. For example, the method may further include adding a first alkylamine to a non-polar organic solvent, typically before adding a first (or second) precursor compound to the solvent to form a precursor composition. The solvent could be obtained by mixing a non-polar organic solvent with the first organic amine in liquid form.

[0047] First Precursor Compound The first precursor compound comprises a first cation (M) which is a metal cation or a metalloid cation. The first precursor compound typically further comprises a first anion. The first precursor compound may comprise further cations or anions. The first precursor compound may consist of one or more first cations and one or more first anions.

[0048] Typically, the first anion is a halide anion, a nitrate anion, a thiocyanate anion (SCN - ), tetrafluoroborate anion (BF 4- ) or an organic anion. Preferably, the first anion is a halide anion or an organic anion. The first precursor compound may include more than one first anion, for example more than one halide anion.

[0049] Typically, the organic anion has the formula RCOO - , ROCOO - , RSO3 - , ROP(O)(OH)O - , or R.O. - (Wherein, R is H, substituted or unsubstituted C 1~10 Alkyl, substituted or unsubstituted C 2~10 Alkenyl, substituted or unsubstituted C 2~10 Alkynyl, substituted or unsubstituted C3~10 Cycloalkyl, substituted or unsubstituted C 3~10 For example, R is H, substituted or unsubstituted C 1~10 Alkyl, substituted or unsubstituted C 3~10 Typically, R is H, substituted or unsubstituted C 1~6 R is H, unsubstituted C, or alkyl, or substituted or unsubstituted aryl. 1~6 R may be an alkyl, or an unsubstituted aryl. Thus, R may be selected from H, methyl, ethyl, propyl, butyl, pentyl, hexyl, cyclopentyl, cyclohexyl, and phenyl.

[0050] In many cases, the one or more first anions are selected from the group consisting of halide anions and anions of the formula RCOO. - where R is H or methyl. Typically, the first anion is selected from the group consisting of F - , Cl - , Br - , I - , nitrate, formate or acetate. Preferably, the first anion is Cl - , Br - , I - or F - More preferably, the first anion is Cl. - , Br - or I - It is.

[0051] The metal or metalloid cation may be a cation derived from any metal in Groups 1 to 16 of the Periodic Table of Elements. The metal or metalloid cation may be any suitable metal or metalloid cation. The metal or metalloid cation may be a monocation, a dication, a trication, or a tetracation. The metal or metalloid cation is typically a dication or a tetracation.

[0052] Metalloids include the following elements: B, Si, Ge, As, Sb, Te and Po. Preferably, the first cation is a metal dication or a metalloid dication, such as a metal dication.

[0053] Typically, the first cation, which is a metal or semimetal cation, is Ca 2+ , Sr 2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Yb 2+ ,EU 2+ , Bi 3+ , Sb 3+ , Pd 4+ , W 4+ , Re 4+ , Os 4+ , Ir 4+ , Pt 4+ , Sn 4+ , Pb 4+ , Ge 4+ or Te 4+ Preferably, the metal or semimetal cation is Cu. 2+ , Pb 2+ , Ge 2+ , or Sn 2+ In most cases, the first cation is Pb 2+ Or Sn 2+ The first compound is a metal or semimetal cation, which is one of two or more first cations, e.g., Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Yb 2+ , and Eu 2+ The cations may include two or more cations selected from:

[0054] Typically, the first precursor compound has the formula MY2, MY 3、 or a compound of formula MY4, wherein M is the first cation which is a metal or metalloid di-, trication, or tetracation, and Y is the first anion.

[0055] Thus, the first precursor compound has the formula MY2, where M is Ca 2+ , Sr 2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Yb 2+ , or Eu 2+ and Y is F - , Cl - , Br - , I - , formate, or acetate. Preferably, M is Cu 2+ , Pb 2+ , Ge 2+ , or Sn 2+ and Y is Cl - , Br - , I - , formate, or acetate, preferably Cl - , Br - , or I - It is.

[0056] The first precursor compound is typically a compound of formula MX2. Preferably, the first precursor compound is a compound of formula SnI2, SnBr2, SnCl2, Pb(OAc)2, PbI2, PbBr2 or PbCl2. More preferably, the first precursor compound is a compound of formula PbI2, PbBr2 or PbCl2. Most preferably, the first precursor compound is PbI2.

[0057] The first precursor compound has the formula MY3, where M is Bi 3+ Or Sb3+ and Y is F - , Cl - , Br - , I - , SCN - , BF4 - , formate, or acetate. Preferably, M is Bi 3+ and Y is Cl - , Br - , I - In this case, the A / M / X material typically comprises a bismuth halogenometallate or an antimony halogenometallate.

[0058] The first precursor compound has the formula MY4, where M is Pd 4+ , W 4+ , Re 4+ , Os 4+ , Ir 4+ , Pt 4+ , Sn 4+ , Pb 4+ , Ge 4+ , or Te 4+ and Y is F - , Cl - , Br - , I - , SCN - , BF4 - , formate, or acetate. Preferably, M is Sn 4+ , Pb 4+ , or Ge 4+ and Cl - , Br - , or I - In this case, the A / M / X material typically comprises a hexahalometalate.

[0059] The concentration of the first precursor compound in the precursor composition is typically from 0.01M to 2.0M, for example from 0.1 to 1.0M.

[0060] Second Precursor Compound The solvent system of the method of the present invention is advantageously capable of solubilizing both the metal-containing first precursor compound and the organic material, as well as the second precursor compound that may be necessary to form the crystalline A / M / X material.

[0061] Typically, the method further comprises disposing a second precursor compound on the substrate, the second precursor compound comprising a second cation (A) and a second anion (X). Preferably, the second precursor compound is a compound of the formula [A][X], where [A] comprises one or more second cations and [X] comprises one or more halide anions. Often, the precursor composition further comprises (c) a second precursor compound, the second precursor compound comprising a second cation (A) and a second anion (X).

[0062] The second precursor compound includes a second anion (e.g., a halide anion) and a second cation. The second anion and the second cation can be any suitable ion. The second cation is typically a metal or metalloid cation, or an organic cation. For example, the second cation can be Li + , Na + , K + , Rb + , Cs + The second cation may be a cation selected from the group consisting of Cs, Cs(III) and an organic cation. The second cation is often a monocation, such as a metal or metalloid monocation or an organic monocation. Typically, the second cation is Cs + Or an organic cation.

[0063] Typically, the second cation is an organic cation. The second cation may be any suitable organic cation. The organic cation may be a cation obtained from an organic compound, for example, by protonation. The second cation may be an organic monocation or an organic dication. The second cation is typically an organic monocation. The second cation is typically less than 500 gmol -1 Preferably, the second cation has a molecular weight of 250 gmol-1 or less than 150 gmol -1 The second cation has a molecular weight of: Often, the second cation is an organic cation that includes a nitrogen atom or a phosphorus atom. For example, the organic cation may include a quaternary nitrogen atom.

[0064] Typically, the second cation is Cs + , (NR 1 R 2 R 3 R 4 ) + , (R 1 R 2 N=CR 3 R 4 ) + , (R 1 R 2 NC(R 5 )=NR 3 R 4 ) + , or (R 1 R 2 NC(NR 5 R 6 )=NR 3 R 4 ) + and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 each independently represents H, substituted or unsubstituted C 1~20 R is an alkyl group or a substituted or unsubstituted aryl group. 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are typically independently H, substituted or unsubstituted C 1~6 R is an alkyl group or a substituted or unsubstituted aryl group. 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are independently H or unsubstituted C 1~6 It is an alkyl group. For example, R 1 , R2 , R 3 , R 4 , R 5 , and R 6 may be independently H, methyl, ethyl, or propyl.

[0065] Preferably, the second cation is (R 1 NH3) + , (NR 2 4) + , and (H2N-C(R 1 )=NH2) + (In the formula, R 1 is H, substituted or unsubstituted C 1~20 is an alkyl group, or a substituted or unsubstituted aryl group, 2 are independently H or substituted or unsubstituted C 1~10 In most cases, R 1 is H or unsubstituted C 1~6 is an alkyl group, and each R 2 is unsubstituted C 1~6 It is an alkyl group. For example, R 1 may be H, methyl, ethyl, or propyl, and each R 2 R can be methyl, ethyl, and propyl. 2 may all be the same and may be methyl, ethyl, and propyl. For example, the second cation may be Cs + , (CH3NH3) + , (CH3CH2NH3) + , (CH3CH2CH2NH3) + , (N(CH3)4) + , (N(CH2CH3)4) + , (N(CH2CH2CH3)4) + , (H2N-C(H)=NH2) + , and (H2N-C(CH3)=NH2) + Preferably, the one or more second cations are selected from (CH3NH3) + , (H2N-C(H)=NH2) + and Cs + is selected from.

[0066] The second anion is typically a halide anion. The second anion is F - , Cl - , Br - or I - In many cases, the second anion is Cl. - , Br - or I - It is.

[0067] Typically, the one or more first cations are Ca 2+ , Sr 2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Yb 2+ ,EU 2+ , Bi 3+ , Sb 3+ , Pd 4+ , W 4+ , Re 4+ , Os 4+ , Ir 4+ , Pt 4+ , Sn 4+ , Pb 4+ , Ge 4+ or Te 4+ Preferably, the one or more first cations are selected from Cu 2+ , Pb 2+ , Ge 2+ and Sn 2+ and the one or more second cations are selected from the formula Cs + , (NR 1 R 2 R 3 R 4 ) + , (R 1 R 2 N=CR 3 R 4 ) + , (R 1 R 2 NC(R 5 )=NR 3 R 4 )+ and (R 1 R 2 NC(NR 5 R 6 )=NR 3 R 4 ) + wherein R 1 , R 2 , R 3 , R 4 , R 5 and R 6 each independently represents H, substituted or unsubstituted C 1-20 An alkyl group or a substituted or unsubstituted aryl group, preferably the one or more second cations are (CH3NH3) + and (H2N-C(H)=NH2) + is selected from.

[0068] The second precursor compound is typically a compound of formula AX. The second precursor compound is, for example, (HNR 1 )X, (NR 1 R 2 R 3 R 4 )X, (R 1 R 2 N=CR 3 R 4 )X, (R 1 R 2 NC(R 5 )=NR 3 R 4 )X and (R 1 R 2 NC(NR 5 R 6 )=NR 3 R 4 )X(wherein, R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 each independently represents H, substituted or unsubstituted C 1~20 is an alkyl group, or a substituted or unsubstituted aryl group; X is F - , Cl - , Br - , or I -Preferably, the second precursor compound is selected from (HNR 1 )X(wherein, R 1 is unsubstituted C 1~6 is an alkyl group, and X is Cl - , Br - , or I - (That is.)

[0069] The second precursor compound may be selected from, for example, CsF, CsCl, CsBr, CsI, NH4F, NH4Cl, NH4Br, NH4I, (CH3NH3)F, (CH3NH3)Cl, (CH3NH3)Br, (CH3NH3)I, (CH3CH2NH3)F, (CH3CH2NH3)Cl, (CH3CH2NH3)Br, (CH3CH2NH3)I, (N(CH3)4)F, (N(CH3)4)Cl, (N(CH3)4)Br, (N(CH3)4)I, (H2N-C(H)=NH2)F, (H2N-C(H)=NH2)Cl, (H2N-C(H)=NH2)Br and (H2N-C(H)=NH2)I. Typically the second precursor compound is selected from (CHNH)Cl, (CHNH)Br, (CHNH)I, (CHCHNH)Cl, (CHCHNH)Br, (CHCHNH)I, (N(CH)Cl, (N(CH)Br, (N(CH)I, (HN-C(H)=NH)Cl, (HN-C(H)=NH)Br and (HN-C(H)=NH)I.

[0070] Preferably, the second precursor compound is (H2N-C(H)=NH2)I, (H2N-C(H)=NH2)Br, (H2N-C(H)=NH2)Cl, (CH3NH3)I, (CH3NH3)Br or (CH3NH3)Cl. For example, the second precursor compound may be (CH3NH3)I.

[0071] If the crystalline A / M / X material is a mixed cation material, it may contain two or more different second precursor compounds. For example, the precursor composition may include CsX and (H2N-C(H)=NH2)X', where X and X' are the same or different and may be Cl. - , Br - and I- is a halide anion selected from

[0072] Typically, the molar ratio of (first precursor compound):(second precursor compound) in the precursor composition is 1:2 to 2:1.

[0073] organic materials An advantage of the method of the present invention is that it allows for the simultaneous deposition of an A / M / X material and an organic material, and therefore the precursor composition typically further comprises (d) an organic material.

[0074] The organic material is typically an organic dielectric material, an organic semiconductor material, an organic polymer, a fullerene derivative, an organic reducing agent, or an organic oxidizing agent.

[0075] Organic semiconductor materials are typically poly(4-butylphenyldiphenylamine), poly(N,N'-bis-4-butylphenyl-N,N'-bisphenyl)benzidine (polyTPD), poly(triarylamine) (PTAA), spiro-bi-fluorene compounds, spiro-OMeTAD, thiophene-containing polymers, poly(3-hexylthiophene), poly(3,4-ethylenedioxythiophene) (PEDOT), rylene derivatives, perylene, poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylfluorenyl) ... poly(9,9-dioctylfluorenyl-2,7-diyl)] (TFB), poly(9,9-dioctylfluorenyl-2,7-diyl) (F8), poly(9-vinylcarbazole) (PVK), 4,4'-bis(carbazol-9-yl)biphenyl (CBP), poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazole-4,7-diyl)] (F8BT), poly(3-hexylthiophene-2,5-diyl) (P3HT), phenyl-C61-butyric acid methyl ester (PCBM) and diphenylanthracene (DPA).

[0076] The organic dielectric material is typically selected from poly(methyl methacrylate) (PMMA), polystyrene, poly(vinyl acetate) and ethylene-vinyl acetate (EVA).

[0077] The organic reducing agent or organic oxidizing agent is typically selected from 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), hexafluorotetra-cyanonaphthoquinodimethane (F6TCNNQ), molybdenum compounds, molybdenum tris(dithiolene), pentamethylcyclopentadienyl cyclopentadienyl rhodium dimer, decamethylcobaltocene (DMC), 3-dimethyl 2-phenyl-2,3-dihydro-1H-benzimidazole (N-DMBI), pentamethyliridocene ((IrCp*Cp)2) and ruthenium pentamethylcyclopentadienyl mesitylene ((RuCp*mes)2).

[0078] Preferably, the organic material is polymethylmethacrylate or phenyl-C61-butyric acid methyl ester (PCBM). More preferably, the organic material is phenyl-C61-butyric acid methyl ester.

[0079] The concentration of the organic material in the precursor composition is typically less than 30 mg / ml, for example less than 20 mg / ml.

[0080] Secondary alkylamine The presence of a first organic amine (e.g., a first alkylamine) creates a solvent system capable of dissolving both the metal-containing first precursor compound and the organic material. However, it is often desirable to further include a second alkylamine. The organic amine, e.g., alkylamine, present in the solvent of the precursor composition is often incorporated into the structure of the crystalline A / M / X material. If this is not desirable, the invention also provides for exposing the layer produced from the deposited precursor composition to a conversion compound, as described below. Alternatively (or in addition), the precursor compound may include a second alkylamine, the presence of which in the as-produced A / M / X material is preferred.

[0081] Thus, the solvent typically further comprises a second alkylamine. The second alkylamine typically has the formula R B NH2, where R B is unsubstituted C 1-8 It is an alkyl group.

[0082] As discussed above, the second alkylamine is often preferentially incorporated into the A / M / X material. Thus, [A] in the formula of the A / M / X material is typically a group represented by the formula (R B NH3) + and the second alkylamine has a formula R B NH2, where each R B are the same group, and C 1-8 For example, the second alkylamine may be a methylamine or an ethylamine.

[0083] Preferably, the second cation is methylammonium and the second alkylamine is methylamine.

[0084] When the solvent comprises a second alkylamine, the solvent is typically prepared by adding the second alkylamine to the non-polar organic solvent before or after adding the first alkylamine to the non-polar organic solvent. The second alkylamine can be added to the non-polar organic solvent by bubbling the second alkylamine through the non-polar solvent, for example, for 1 to 30 minutes. The solvent can be obtained by bubbling the second alkylamine through the non-polar solvent.

[0085] The amount of the second alkylamine in the solvent or precursor composition can vary depending on the requirements. Typically, when present, the molar ratio of (second alkylamine):(first precursor compound) is 1×10 -7 :1~0.5:1, optionally 1×10 -6:1 to 0.1:1. In some cases, the amount of the second alkylamine may be relatively small. For example, the molar ratio of (second alkylamine):(first precursor compound) is 1×10 -4 In this case, the molar ratio may be, for example, 1×10 -7 :1 is also acceptable.

[0086] Thus, the solvent may comprise toluene as the non-polar organic solvent, butylamine as the first organic amine, and methylamine as the second alkylamine. For example, the solvent may be obtained by bubbling methylamine gas through the non-polar organic solvent for 1-30 minutes, and then mixing butylamine, for example, in a volume of 50 μl-300 μl per ml of the non-polar organic solvent.

[0087] Crystalline A / M / X materials The crystalline A / M / X material may be any suitable crystalline A / M / X material. The crystalline compound has the formula: a [M] b [X] c where [A] is one or more second cations and [M] is Pd 4+ , W 4+ , Re 4+ , Os 4+ , Ir 4+ , Pt 4+ , Sn 4+ , Pb 4+ , Ge 4+ , Te 4+ , Bi 3+ , Sb 3+ , Sn 2+ , Pb 2+ , Cu 2+ , Ge 2+ and Ni 2+ and [X] is one or more first cations which are metal or semimetal cations selected from the group consisting of Cl. - , Br - , I - , O 2- , S 2- , Se 2- , and Te 2-wherein a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 1 to 8.

[0088] [A] is one type of cation (A) and [M] is two types of cations (M 1 and M 2 ) and [X] is one anion (X), the crystalline material has the formula A a (M 1 ,M 2 ) b X c [A] may represent one, two or more A ions. When [A], [M] or [X] are more than one (two or more) ions, the ions may be present in any ratio. For example, A a (M 1 ,M 2 ) b X c is the formula A a M 1 by M 2 b(1-y) X c (wherein y is between 0 and 1, for example 0.05 to 0.95). Such materials are sometimes referred to as mixed ion materials.

[0089] Typically, the crystalline A / M / X material comprises a perovskite or a hexahalometallate. Preferably, the crystalline material comprises a perovskite. The crystalline material often comprises a metal halide perovskite. The crystalline material often comprises an organometal halide perovskite.

[0090] Crystalline A / M / X materials may include mixed 3D and 2D phase perovskites, which include mixtures of small and large organic cations, such as butylammonium and methylammonium, or butylammonium and formamidinium.

[0091] Preferably, the crystalline A / M / X material comprises a perovskite compound of the formula [A][M][X], where [A] comprises one or more second cations, [M] comprises one or more first cations, and [X] comprises one or more halide anions. The one or more first cations and the one or more second cations may be as described herein.

[0092] For example, a crystalline A / M / X material is a perovskite compound of the formula [A][M][X]3, where [A] is Cs + , (CH3NH3) + , (H2N-C(H)=NH2) + and (CH3(CH2)3NH3) + and [M] is Pb 2+ and Sn 2+ and [X] comprises one or more halide anions.

[0093] In one embodiment, the perovskite has the formula (IA) AM[X]3(IA) (wherein A is an organic monocation, M is a metal cation, and [X] is two or more different halide anions). [X] may be two or three different halide anions.

[0094] In one embodiment, the perovskite has the formula Cs z (H2N-C(H)=NH2) (1-z) [B]X 3y X' 3(1-y) (wherein [B] is one or more first cations and X is I - , Br - , Cl - and F - X' is a first halide anion selected from the group consisting of: - , Br - , Cl -and F - and z is 0.01 to 0.99, and y is 0.01 to 0.99. For example, the perovskite is a perovskite compound of the formula Cs z (H2N-C(H)=NH2) (1-z) PbBr 3y I 3(1-y) It may also be a compound of the formula:

[0095] Crystalline A / M / X materials have the formula CH3NH3PbI3, CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbF3, CH3NH3PbBr x I 3-x , CH3NH3PbBr x Cl 3-x , CH3NH3PbI x Cl 3-x , CH3NH3PbI 3-x Cl x , CH3NH3SnI3, CH3NH3SnBr3, CH3NH3SnCl3, CH3NH3SnF3, CH3NH3SnBrI2, CH3NH3SnBr x I 3-x , CH3NH3SnBr x Cl 3-x , CH3NH3SnF 3-x Br x , CH3NH3SnI x Br 3-x , CH3NH3SnI x Cl 3-x , CH3NH3SnF 3-x I x , CH3NH3SnCl x Br 3-x , CH3NH3SnI 3-x Cl x and CH3NH3SnF 3-x Cl x , CH3NH3CuI3, CH3NH3CuBr3, CH3NH3CuCl3, CH3NH3CuF3, CH3NH3CuBrI2, CH3NH3CuBr x I 3-x , CH3NH3CuBr x Cl 3-x , CH3NH3CuF 3-x Brx , CH3NH3CuI x Br 3-x , CH3NH3CuI x Cl 3-x , CH3NH3CuF 3-x I x , CH3NH3CuCl x Br 3-x , CH3NH3CuI 3-x Cl x 、 or CH3NH3CuF 3-x Cl x (where x is 0 to 3) perovskite compound; formula (H2N-C(H)=NH2)PbI3, (H2N-C(H)=NH2)PbBr3, (H2N-C(H)=NH2)(H2N-C(H)=NH2)PbCl3, (H2N-C(H)=NH2)PbF3, (H2N-C(H)=NH2)PbBr x I 3-x , (H2N-C(H)=NH2)PbBr x Cl 3-x , (H2N-C(H)=NH2)PbI x Br 3-x , (H2N-C(H)=NH2)PbI x Cl 3-x , (H2N-C(H)=NH2)PbCl x Br 3-x , (H2N-C(H)=NH2)PbI 3-x Cl x , (H2N-C(H)=NH2)SnI3, (H2N-C(H)=NH2)SnBr3, (H2N-C(H)=NH2)SnCl3, (H2N-C(H)=NH2)SnF3, (H2N-C(H)=NH2)SnBrI2, (H2N-C(H)=NH2)SnBr x I 3-x , (H2N-C(H)=NH2)SnBr x Cl 3-x , (H2N-C(H)=NH2)SnF 3-x Br x , (H2N-C(H)=NH2)SnI x Br 3-x , (H2N-C(H)=NH2)SnI x Cl 3-x , (H2N-C(H)=NH2)SnF 3-x Ix 、(H2N-C(H)=NH2)SnCl x Br 3-x 、(H2N-C(H)=NH2)SnI 3-x Cl x 、(H2N-C(H)=NH2)SnF 3-x Cl x 、(H2N-C(H)=NH2)CuI3, (H2N-C(H)=NH2)CuBr3, (H2N-C(H)=NH2)CuCl3, (H2N-C(H)=NH2)CuF3, (H2N-C(H)=NH2)CuBrI2, (H2N-C(H)=NH2)CuBr x I 3-x 、(H2N-C(H)=NH2)CuBr x Cl 3-x 、(H2N-C(H)=NH2)CuF 3-x Br x 、(H2N-C(H)=NH2)CuI x Br 3-x 、(H2N-C(H)=NH2)CuI x Cl 3-x 、(H2N-C(H)=NH2)CuF 3-x I x 、(H2N-C(H)=NH2)CuCl x Br 3-x 、(H2N-C(H)=NH2)CuI 3-x Cl x 、or (H2N-C(H)=NH2)CuF 3-x Cl x (where x is from 0 to 3) perovskite compound; or the formula (H2N-C(H)=NH2) y Cs 1-y PbI3, (H2N-C(H)=NH2) y Cs 1-y PbBr3, (H2N-C(H)=NH2) y Cs 1-y PbCl3, (H2N-C(H)=NH2) y Cs 1-y PbF3, (H2N-C(H)=NH2) y Cs 1-y PbBr x I 3-x 、(H2N-C(H)=NH2) y Cs 1-yPbBr x Cl 3-x 、(H2N-C(H)=NH2) y Cs 1-y PbI x Br 3-x 、(H2N-C(H)=NH2) y Cs 1-y PbI x Cl 3-x 、(H2N-C(H)=NH2) y Cs 1-y PbCl x Br 3-x 、(H2N-C(H)=NH2) y Cs 1-y PbI 3-x Cl x 、(H2N-C(H)=NH2) y Cs 1-y SnI3、(H2N-C(H)=NH2) y Cs 1-y SnBr3、(H2N-C(H)=NH2) y Cs 1-y SnCl3、(H2N-C(H)=NH2) y Cs 1-y SnF3、(H2N-C(H)=NH2) y Cs 1-y SnBrI2、(H2N-C(H)=NH2) y Cs 1-y SnBr x I 3-x 、(H2N-C(H)=NH2) y Cs 1-y SnBr x Cl 3-x 、(H2N-C(H)=NH2) y Cs 1-y SnF 3-x Br x 、(H2N-C(H)=NH2) y Cs 1-y SnI x Br 3-x 、(H2N-C(H)=NH2) y Cs 1-y SnI x Cl 3-x 、(H2N-C(H)=NH2) y Cs 1-y SnF 3-x Ix 、(H2N-C(H)=NH2) y Cs 1-y SnCl x Br 3-x 、(H2N-C(H)=NH2) y Cs 1-y SnI 3-x Cl x 、(H2N-C(H)=NH2) y Cs 1-y SnF 3-x Cl x 、(H2N-C(H)=NH2) y Cs 1-y CuI3、(H2N-C(H)=NH2) y Cs 1-y CuBr3、(H2N-C(H)=NH2) y Cs 1-y CuCl3、(H2N-C(H)=NH2) y Cs 1-y CuF3、(H2N-C(H)=NH2) y Cs 1-y CuBrI2、(H2N-C(H)=NH2) y Cs 1-y CuBr x I 3-x 、(H2N-C(H)=NH2) y Cs 1-y CuBr x Cl 3-x 、(H2N-C(H)=NH2) y Cs 1-y CuF 3-x Br x 、(H2N-C(H)=NH2) y Cs 1-y CuI x Br 3-x 、(H2N-C(H)=NH2) y Cs 1-y CuI x Cl 3-x 、(H2N-C(H)=NH2) y Cs 1-y CuF 3-x I x 、(H2N-C(H)=NH2) y Cs 1-y CuCl x Br3-x , (H2N-C(H)=NH2) y Cs 1-y CuI 3-x Cl x , or (H2N-C(H)=NH2) y Cs 1-y CuF 3-x Cl x (wherein x is 0 to 3, and y is 0.1 to 0.9) may be included.

[0096] Typically, crystalline A / M / X materials have the formula CH3NH3PbI3, CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbBr x Cl 3-x , CH3NH3PbI x Br 3-x , CH3NH3PbI x Cl 3-x (wherein x is 0 to 3, for example, 0.1 to 2.99).

[0097] Crystalline A / M / X materials are A n-1 A'2M n [X] 3n+1 where A and A' are different second cations, M is a first cation, [X] is at least one halide anion, and n is an integer from 1 to 8, for example, from 2 to 6. n may be 3 or 4. A is, for example, methylammonium (CH3NH3). + A' may be, for example, butylammonium (CH3(CH2)3NH3). + M may be, for example, Pb 2+ X may be, for example, I - , Br - Or Cl - It may be one or more of the above.

[0098] The crystalline A / M / X material may alternatively be represented by the formula (III): [A]2[M][X]6(III) wherein [A] is one or more second cations, [M] is one or more first cations which are one or more metal cations or metalloid tetracations, and [X] is at least one halide anion.

[0099] For example, hexahalometalate compounds are Cs2SnI6, Cs2SnBr6, and Cs2SnBr 6-y I y , Cs2SnCl 6-y I y , Cs2SnCl 6-y Br y , (CH3NH3)2SnI6, (CH3NH3)2SnBr6, (CH3NH3)2SnBr 6-y I y , (CH3NH3)2SnCl 6-y I y , (CH3NH3)2SnCl 6-y Br y , (H2N-C(H)=NH2)2SnI6, (H2N-C(H)=NH2)2SnBr6, (H2N-C(H)=NH2)2SnBr 6-y I y , (H2N-C(H)=NH2)2SnCl 6-y I y or (H2N-C(H)=NH2)2SnCl 6-y Br y (wherein y is 0.01 to 5.99).

[0100] Crystalline A / M / X materials have the formula [A]2[B I ][B III [X]6, where [A] is one or more first monocations and [B I ] is one or more second monocations, and [B III [X] is one or more trications and [X] is one or more halide anions. I and B. III may be as defined above for M. [B I ] is Li + , Na + , K +, Rb + , Cs + , Cu + , Ag + , Au + and Hg + From, preferably Cu + , Ag + and Au + [B III ] is Bi 3+ , Sb 3+ , Cr 3+ , Fe 3+ , Co 3+ , Ga 3+ , As 3+ , Ru 3+ , Rh 3+ , In 3+ , Ir 3+ and Au 3+ From, preferably Bi 3+ and Sb 3+ The double perovskite may be selected from the formula CsAgBiX6, (H2N-C(H)=NH2)2AgBiX6, (H2N-C(H)=NH2)2AuBiX6, (CH3NH3)2AgBiX6 or (CH3NH3)2AuBiX6, where X is I - , Br - Or Cl - The double perovskite may be a compound of the formula Cs2AgBiBr6.

[0101] Process conditions The final concentration of the precursor compound in the precursor composition, including the precursor compound and the solvent, is typically 10-60 wt%. The concentration may be 20-50 wt% or 15-35 wt%, for example, about 30 wt%. The percentages are based on the total weight of the precursor composition.

[0102] Typically, the precursor composition is disposed on the substrate by solution phase deposition, such as gravure coating, slot die coating, screen printing, inkjet printing, doctor blade coating, spray coating, or spin coating. Typically, the precursor composition is disposed on the substrate by spin coating the precursor composition on the substrate.

[0103] Usually, the layer of the crystalline A / M / X material has a thickness of 5 to 3000 nm. Typically, the layer of the crystalline A / M / X material has a thickness of 20 to 1000 nm, for example, 100 to 1000 nm or 300 to 1000 nm. Preferably, the layer of the crystalline A / M / X material has a thickness of 100 nm or more, for example, 100 to 3000 nm or 100 to 700 nm.

[0104] Typically the method further comprises removing the solvent to form a layer comprising the perovskite compound. Removing the solvent may comprise heating the substrate or evaporating the solvent.

[0105] It is often desirable to anneal the layer of crystalline A / M / X material or the layer of the deposited precursor composition. Typically the method further comprises heating the substrate on which the precursor composition is deposited. Preferably the substrate is heated to a temperature of from 50° C. to 400° C., for example from 50° C. to 200° C. More preferably the substrate is heated to a temperature of from 50° C. to 200° C. for a period of from 1 to 100 minutes.

[0106] The method may include disposing a precursor composition comprising (a) PbI2, (b) a solvent comprising toluene and butylamine, and (c) (CH3NH3)I on a substrate. Preferably, the method includes disposing a precursor composition comprising (a) PbI2, (b) a solvent comprising toluene, butylamine, and methylamine, and (c) (CH3NH3)I on a substrate.

[0107] The substrate typically includes a layer of a first electrode material. The first electrode material may include a metal (e.g., silver, gold, aluminum, or tungsten) or a transparent conductive oxide (e.g., fluorine-doped tin oxide (FTO) or indium-doped tin oxide (ITO)). Typically, the first electrode material includes a transparent conductive oxide.

[0108] The substrate may, for example, include a layer of a first electrode material and a layer of an n-type semiconductor. Often the substrate includes a layer of a transparent conductive oxide, such as FTO, and a dense layer of an n-type semiconductor, such as TiO2.

[0109] In some embodiments, the substrate comprises a layer of porous scaffold material. The porous scaffold layer is usually in contact with a layer of n-type or p-type semiconductor material, for example, a dense layer of n-type semiconductor or a dense layer of p-type semiconductor. The scaffold material is typically mesoporous or macroporous. The scaffold material can support charge transport from the crystalline material to adjacent regions. The scaffold material can also support the formation of a layer of crystalline material during deposition. The porous scaffold material is typically infiltrated with the crystalline material after deposition.

[0110] Typically, the porous scaffold material comprises a dielectric material or a charge transport material. The scaffold material may be a dielectric scaffold material. The scaffold material may be a charge transport scaffold material. The porous scaffold material may be an electron transport material or a hole transport scaffold material. An n-type semiconductor is an example of an electron transport material. A p-type semiconductor is an example of a hole transport scaffold material. Preferably, the porous scaffold material is a dielectric scaffold material or an electron transport scaffold material (e.g., an n-type scaffold material).

[0111] The porous scaffold material may be a charge transport scaffold material (e.g., an electron transport material such as titanium oxide, or a hole transport material), or a dielectric material such as aluminum oxide. The term "dielectric material" as used herein means a material that is an electrical insulator or a conductor that barely conducts electric current. Thus, the term dielectric does not include semiconducting materials such as titanium oxide. The term dielectric as used herein typically means a material that has a band gap of 4.0 eV or more (titanium oxide has a band gap of about 3.2 eV). Of course, one of skill in the art can easily measure the band gap of a material using well-known procedures that do not require undue experimentation. For example, the band gap of a material can be estimated by constructing a photovoltaic diode or solar cell with the material and determining the photovoltaic action spectrum. The monochromatic photon energy at which the diode begins to generate photocurrent can be taken as the band gap of the material. Such a method was used by Barkhouse et al., Prog. Photovolt: Res. Appl. 2012, 20:6-11. When reference is made herein to the bandgap of a material, it is the bandgap measured in this manner, i.e., the bandgap determined by recording the photovoltaic action spectrum of a photovoltaic diode or solar cell constructed with the material and observing the monochromatic photon energy at which significant photocurrent begins to develop.

[0112] The thickness of the porous scaffold layer is typically 5 nm to 400 nm. For example, the thickness of the porous scaffold layer may be 10 nm to 50 nm.

[0113] The substrate may, for example, include a layer of a first electrode material, a layer of an n-type semiconductor, and a layer of a dielectric scaffold material. Thus, the substrate may include a layer of a transparent conductive oxide, a dense layer of TiO2, and a porous layer of Al2O3.

[0114] Often the substrate includes a layer of a first electrode material and a layer of an n-type semiconductor or a layer of a p-type semiconductor.

[0115] Typically, the substrate comprises a layer of a first electrode material, and optionally one or more additional layers each selected from a layer of an n-type semiconductor, a layer of a p-type semiconductor, and a layer of an insulating material. Typically, the surface of the substrate on which the precursor composition is disposed comprises one or more of the first electrode material, a layer of an n-type semiconductor, a layer of a p-type semiconductor, and a layer of an insulating material.

[0116] The p-type semiconductor may include inorganic or organic p-type semiconductors. Typically, the p-type semiconductor includes an organic p-type semiconductor. A suitable p-type semiconductor may be selected from a polymeric or molecular hole transporter. The p-type semiconductor may include spiro-OMeTAD (2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenylamine)9,9'-spirobifluorene), P3HT (poly(3-hexylthiophene)), PCPDTBT (poly[2,1,3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b:3,4-b']dithiophene-2,6-diyl]]), or PVK (poly(N-vinylcarbazole)). The p-type semiconductor may include carbon nanotubes. Typically, the p-type semiconductor is selected from spiro-OMeTAD, P3HT, PCPDTBT, and PVK. Preferably, the p-type semiconductor is spiro-OMeTAD.

[0117] Additional Process Steps The method may include the additional step of removing the first organic amine incorporated in the layer produced by disposing the precursor compound on the substrate by exposing the disposed layer to a conversion compound (i.e., a compound that converts the as-disposed layer to the desired crystalline A / M / X material). Thus, the method typically further includes the step of exposing the substrate on which the precursor composition is disposed to a conversion compound, the conversion compound having the formula R C NH2 or (R C NH3)X (wherein, R C is C 1-4is an alkyl group and X is a halide anion. For example, the conversion compound may be selected from methylamine, ethylamine, propylamine, methylammonium halide, ethylammonium halide or propylammonium halide, where the halide is selected from iodide, bromide and chloride. Alternatively, the conversion compound may be a formamidinium halide, such as (H2N-C(H)=NH2)Cl, (H2N-C(H)=NH2)Br or (H2N-C(H)=NH2)I.

[0118] The conversion compound typically corresponds to a compound obtained by deprotonating a second cation (i.e., the A cation) present in the crystalline A / M / X compound. For example, if the A / M / X compound contains methylammonium as one of the one or more second cations, the conversion compound may be methylamine. Preferably, the conversion compound is methylamine or a methylammonium halide.

[0119] Exposing the substrate on which the precursor composition is disposed to the conversion compound typically comprises exposing the substrate on which the precursor composition is disposed to a vapor comprising the conversion compound. The method may further comprise the step of annealing the as-disposed precursor composition between depositing the precursor compound on the substrate and exposing the substrate to the conversion compound. Annealing may comprise heating the substrate on which the precursor composition is disposed to a temperature between 50° C. and 200° C. for a time period between 1 and 100 minutes.

[0120] Exposing the substrate on which the precursor composition is disposed to a vapor containing the conversion compound typically involves exposing the substrate on which the precursor composition is disposed to a vapor containing the conversion compound at a pressure of at least 500 mbar (50 kPa). The exposure may be carried out at atmospheric pressure.

[0121] The substrate may be exposed to the conversion compound for at least 1 second, for example, 5 to 600 seconds. Typically, the substrate is exposed to the conversion compound at ambient temperature (for example, 15 to 25° C.).

[0122] Methods for manufacturing devices The present invention also provides a method of manufacturing a semiconductor device comprising a layer of crystalline A / M / X material, the method comprising manufacturing said layer of crystalline A / M / X material by a method as defined herein.

[0123] The method typically further comprises disposing a layer of a p-type semiconductor or a layer of an n-type semiconductor on the layer of crystalline A / M / X material. In many cases, the method typically comprises disposing a layer of a p-type semiconductor on the layer of crystalline material. The n-type or p-type semiconductor may be as defined herein. For example, the p-type semiconductor may be an organic p-type semiconductor. A suitable p-type semiconductor may be selected from a polymeric or molecular hole transporter. Preferably, the p-type semiconductor is spiro-OMeTAD. The layer of p-type semiconductor or the layer of n-type semiconductor is typically disposed on the layer of crystalline material by solution processing, for example by disposing a composition comprising a solvent and the n-type or p-type semiconductor. The solvent may be selected from a polar solvent, for example chlorobenzene or acetonitrile. The thickness of the layer of p-type semiconductor or the layer of n-type semiconductor is typically 50 nm to 500 nm.

[0124] The method typically further comprises disposing a layer of a second electrode material on the layer of p-type or n-type semiconductor. The second electrode material may be as defined above with respect to the first electrode material. Typically, the second electrode material comprises or consists essentially of a metal. Examples of metals that the second electrode material may comprise or essentially consist of include silver, gold, copper, aluminum, platinum, palladium, or tungsten. The second electrode may be disposed by vacuum deposition. The layer of the second electrode material typically has a thickness of 5 nm to 100 nm.

[0125] Typically the semiconductor device is an optoelectronic device, a photovoltaic device, a solar cell, a photodetector, a photodiode, a photosensor (photodetector), a radiation detector, a color-emitting device, a transistor, a diode, a photosensitive transistor, a phototransistor, a solid-state triode, a battery, a battery electrode, a capacitor, a supercapacitor, a light-emitting device, a light-emitting diode or a laser.

[0126] The semiconductor device is typically an optoelectronic device. Examples of optoelectronic devices include photovoltaic devices, photodiodes (including solar cells), phototransistors, photomultipliers, photoresistors, and light-emitting devices. Preferably, the semiconductor device is a photovoltaic device.

[0127] composition The present invention also provides a compound of formula MXn, where M is Ca 2+ , Sr 2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Yb 2+ ,EU 2+ , Bi 3+ , Sb 3+ , Pd 4+ , W 4+ , Re 4+ , Os 4+ , Ir 4+ , Pt 4+ , Sn 4+ , Pb 4+ , Ge 4+ or Te 4+ , preferably Cu 2+ , Pb 2+ , Ge 2+ , or Sn 2+ and X is I - , Br - , Cl - , or F - and n is 2, 3, or 4; and (ii) a compound of formula AX, where A is (R1 NH3) + , (NR 2 4) + , and (H2N-C(R 1 )=NH2) + and R 1 is H or unsubstituted C 1-6 is an alkyl group, and each R 2 is unsubstituted C 1-6 is an alkyl group, and X is I - , Br - , Cl - , or F - Also provided is a composition comprising a compound of formula (III) a non-polar organic solvent, which is a hydrocarbon solvent, a chlorohydrocarbon solvent, or an ether solvent, and (iv) a first organic amine containing at least 3 carbon atoms. Such compositions are particularly useful in the methods of the invention. The non-polar organic solvent and the first organic amine may be as described herein.

[0128] Preferably, the composition comprises (i) PbI2, PbBr2 or PbCl2, (ii) (H2N-C(H)=NH2)I, (H2N-C(H)=NH2)Br, (H2N-C(H)=NH2)Cl, (CH3NH3)I, (CH3NH3)Br or (CH3NH3)Cl, (iii) toluene or chlorobenzene, and (iv) butylamine. More preferably, the composition comprises (i) PbI2, (ii) (CH3NH3)I or (H2N-C(H)=NH2)I, (iii) toluene, (iv) butylamine, and (v) methylamine. The relative amounts of the components may be as defined above for the precursor composition. EXAMPLES

[0129] [Example 1] Solvents containing toluene and butylamine A solvent containing a 50:50 v / v mixture of butylamine / toluene was prepared. PbI2 and methylammonium iodide were dissolved in the mixed solvent to form a precursor composition. The precursor composition was then used to form a perovskite film. Figure 1 shows the current-voltage characteristics of a device containing a perovskite film deposited from the mixed butylamine / toluene solvent. Figure 2 shows the absorption of the perovskite film deposited from the butylamine / toluene solvent. The absorption spectrum shows that the perovskite deposited from this butylamine / toluene solvent has the crystal structure MA. n-1 BA2Pb n I 3n+1 It is presumed to be the case.

[0130] [Example 2] Solvents including toluene, butylamine and methylamine Preparation of precursor solutions Methylammonium iodide (Dyesol) and PbI2 (TCI Chemicals) were added to 3 ml of toluene to form a 1 M solution. The vial was sonicated until a dark grey suspension was obtained. A solution of methylamine (MA) in ethanol (Sigma Aldrich, 33 wt%) was placed in an aerator held in an ice bath. Carrier gas (N2) was then bubbled through the solution to degas the MA solution. The produced MA gas was passed through a drying tube filled with desiccants (Drierite and CaO) before being bubbled directly into toluene (Sigma Aldrich) containing the perovskite precursors (methylammonium iodide and PbI2). The gas was bubbled through the dark grey dispersion for 5 minutes before 500 μl of butylamine (Sigma Aldrich) was added to the dispersion. The addition of butylamine gave a clear yellow solution, after which toluene was added to the solution to bring the final molar concentration of the perovskite solution to 0.5 M. The PCBM was then added in the desired amount to the precursor solution, and the solution was stirred at room temperature until the PCBM was completely dissolved.

[0131] Deposition of perovskite films The perovskite films were deposited on the desired substrates by spin-coating at 2000 rpm for 45 seconds, resulting in a yellow film crystallizing during spin-coating. The films were then annealed at 100 °C for 60 minutes and then allowed to cool naturally to room temperature. When the substrate was completely cooled, the films were placed in methylamine vapor for 10 seconds to bleach the perovskite film. The films were then removed from the vapor and immediately placed on a hotplate, after which they were annealed at 100 °C for 5 minutes, resulting in the formation of a CH3NH3PbI3 perovskite film.

[0132] Results and Discussion The addition of butylamine to the perovskite precursor not only causes the dissolution of the material but also results in the incorporation of butylammonium into the perovskite structure. To illustrate this, a standard 0.5M solution of CH3NH3PbI3 in the known ACN / MA (acetonitrile / methylamine) compound solvent was used. By adding different volumes of butylamine to sufficient perovskite precursor solution, it is possible to tune the composition and structure of the perovskite from 3D CH3NH3PbI3 to 2D (CH3(CH2)3NH3)2PbI4. Figure 3 shows the X-ray diffraction diagram and photograph of the produced film. The XRD pattern shows that even with the addition of very small amounts of BA (10 μl / ml), a small peak appears at approximately 11°, indicating the formation of an impurity phase. Interestingly, when no MA is added to the dispersion and BA / ACN is used as the compound solvent, the XRD pattern of the resulting film matches exactly with that of the 2D perovskite (CH3(CH2)3NH3)2PbI4. This indicates that in solutions where amines are used as solvents, an equilibrium exists between the solvent and alkylammonium cations, which allows the solvent molecules to be protonated and thus incorporated into the crystal structure of the perovskite material.

[0133] Alkylamines that are miscible or soluble in non-polar organic solvents can be used to create compound solvents for perovskite precursors, but the resulting layered perovskite structures are not necessarily desirable for photovoltaic applications. Exposure of perovskite films to methylamine (MA) vapor can enhance the crystallinity and morphology, as well as cause changes in the composition of the material. For example, a film of formamidinium lead iodide exposed to MA vapor can be converted to primarily CH3NH3PbI3. Using this approach, high-quality CH3NH3PbI3 films were obtained from a BA / toluene compound solvent. To minimize the amount of excess BA in the perovskite solution, MA is first saturated by bubbling it into the perovskite / toluene dispersion for 10 minutes, and then BA is added to the dispersion until the perovskite dissolves. Films deposited from this precursor ink are then spin-coated and annealed for 30 minutes before exposure to methylamine vapor and annealing at 100°C for an additional 5 minutes. The XRD patterns and absorption spectra of the film before and after exposure to methylamine are shown in FIG.

[0134] From the X-ray diffraction pattern shown in Figure 4(a), it can be seen that when the film is processed directly from the MA:BA / toluene solvent mixture, a layered (CH3(CH2)3NH3)2PbI4 perovskite material forms, similar to the BA / ACN solvent mixture. This is confirmed by the absorption spectrum shown in Figure 4(c), which shows the characteristic excitonic absorption exhibited by this compound. However, after exposure to MA vapor, the film is converted to 3D CH3NH3PbI3, which shows the characteristic XRD pattern and absorption onset at 780 nm.

[0135] Using this sequence of processes, it has been shown that it is possible to successfully prepare CH3NH3PbI3 films from solvents traditionally considered to be antisolvents, thus demonstrating the feasibility of the synthesis of perovskite materials and organic molecules, e.g. 60The utility of this solvent system for the co-deposition of PCBM was investigated. PCBM is most often used as an extractor layer in perovskite-based solar cells, but studies have also shown indications that PCBM may passivate defects within the perovskite layer. Given that PCBM has significant solubility in solvents such as toluene and chlorobenzene, a co-solubilization approach was used to investigate the effect of PCBM on perovskite film formation. Scanning electron microscope images of the produced films are shown in Figure 5.

[0136] From the SEM images shown in FIG. 5, it can be seen that the inclusion of PCBM in the precursor solution does not seem to have a negative effect on the film formation up to a concentration of approximately 20 mg / ml. In fact, at lower concentrations, larger crystalline domains appear to grow, reaching a maximum of approximately 5 mg / ml. At 20 mg / ml, phase separation of the two materials begins to become visible, where there appear to be regions of crystalline perovskite material surrounded by PCBM. At 25 mg / ml and 30 mg / ml, the fine granular structure of perovskite is no longer visible in the film, probably because it is covered by a layer of organic material. However, at 40 mg / ml, the appearance of very large clusters of perovskite crystallites and an inhomogeneous distribution of material across the film surface is observed. However, it should be noted that this concentration of 40 mg / ml is close to the solubility limit for PCBM in toluene, and at this concentration the precursor solution quickly becomes cloudy on standing.

[0137] The optoelectronic quality of these films was then studied with and without the addition of PCBM to the precursor solution. Figure 6 shows the time resolved photoluminescence decay of CH3NH3PbI3 films deposited from MA:BA / toluene solvent with a defined amount of PCBM added to the precursor solution. By fitting the PL decay, a lifetime of approximately 350 ns was found for the control film with no PCBM added to the precursor solution. This value is in good agreement with the literature value for CH3NH3PbI3 reported in the literature. The addition of small amounts of PCBM extended the PL lifetime of the films, reaching a maximum at 5 mg / ml PCBM with a lifetime of approximately 900 ns. This extension of the PL lifetime is consistent with literature results suggesting that at low concentrations PCBM can passivate grain boundaries and interfaces in perovskite films and devices. As the concentration of PCBM increases, a decrease in lifetime is observed, with significant quenching occurring at 20 mg / ml. Considering these results in terms of the changes in crystal size and morphology of the films, it can be inferred that at PCBM concentrations higher than 15 mg / ml, there is a nearly complete phase separation of the materials, forming a PCBM layer on top of the perovskite layer. 60 PCBM has been shown to be an extremely efficient extraction layer for perovskite solar cells, so at high concentrations, where a nearly complete layer of PCBM covers the perovskite, it is believed that the PL lifetime is quenched as electrons are extracted from the perovskite. Although it does not necessarily improve the quality of the perovskite material itself, this is an encouraging result as the method could potentially be used to deposit both the perovskite and the electron transport layer simultaneously.

[0138] Having assessed the optoelectronic quality of the films by optical measurements, the films were then incorporated into solar cells, where the following device structure was used: FTO / SnO2 / CH3NH3PbI3 / spiro-OMeTAD / Ag. Performance statistics for the four batches of devices are shown in Figure 7. Most notably, the V OC The increase in V OCis achieved with PCBM loadings between 5mg / ml and 10mg / ml. A sharp drop in all performance parameters in the devices is observed as the PCBM loading increases. These results can be correlated with SEM images of equivalent perovskite films, where the film morphology appears to change with increasing PCBM loading. From the SEM images, it appears that at higher loadings (>15mg / ml), more PCBM is present at the surface of the film. In the current nip device structure, this would result in direct contact with the spiro-OMeTAD layer, resulting in increased recombination at this interface and therefore an overall decrease in device performance. This is indeed observed in these devices. However, at a PCBM loading of 5mg / ml, the largest grain size and the most improved PL lifetime are observed, and highly efficient devices with scan efficiencies of up to 19.6% and steady-state efficiencies of 18.9% can be achieved. The current-voltage characteristics of the control and test devices are shown in Figure 8. Aspects of the present disclosure include the following. [1] A method for producing a layer of a crystalline A / M / X material, comprising the steps of: a [M] b [X] c wherein [M] comprises one or more first cations, the one or more first cations being metal cations or metalloid cations, [A] comprises one or more second cations, [X] comprises one or more halide anions, a is an integer of 1 to 6, b is an integer of 1 to 6, and c is an integer of 1 to 18; The method includes disposing a precursor composition on a substrate, the precursor composition comprising: (a) a first precursor compound comprising a first cation (M), which is a metal cation or a metalloid cation; (b) a solvent; Including, The solvent is (i) a non-polar organic solvent which is a hydrocarbon solvent, a chlorohydrocarbon solvent, or an ether solvent; (ii) a first organic amine containing at least three carbon atoms; A method comprising: [2] the non-polar organic solvent is toluene, benzene, xylene, chlorobenzene, dichlorobenzene, chloroform, anisole, hexane, pentane, cyclohexane or cyclopentane; The method of embodiment 1, wherein the non-polar organic solvent is preferably toluene or chlorobenzene. [3] The first organic amine has the formula R A NH 2 or a first alkylamine of the formula ArNH 2 a first arylamine of formula RA C is optionally substituted with a phenyl group 3-20 Ar is an alkyl group with 1 to 3 C 1-6 a phenyl group optionally substituted with an alkyl group; Preferably, the first organic amine is a first alkylamine which is propylamine, butylamine, pentylamine, hexylamine or phenylethylamine; The method of any one of the preceding claims, wherein the first alkylamine is butylamine. [4] The method according to any one of aspects 1 to 3, wherein the solvent comprises the non-polar organic solvent and the first organic amine in a volume ratio (non-polar organic solvent):(first organic amine) of 40:1 to 1:2, preferably the volume ratio (non-polar organic solvent):(first organic amine) is 20:1 to 4:1. [5] The one or more first cations are Ca 2+ 、Sr 2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Yb 2+ ,EU 2+ , Bi 3+ , Sb 3+ , Pd 4+ 、W 4+ , Re 4+ , Os 4+ 、Ir 4+ , Pt 4+ , Sn 4+ , Pb 4+ , Ge 4+ , and Te 4+ Preferably, the one or more first cations are selected from Cu 2+ , Pb 2+ , Ge 2+ , and Sn 2+ is selected from The one or more second cations are represented by the formula Cs + , (NR 1 R 2 R 3 R 4 ) + 、(R 1 R 2 N=CR 3 R 4 ) + 、(R 1 R 2 NC(R 5 )=NR 3 R 4 ) + , and (R 1 R 2 NC(NR 5 R 6 )=NR 3 R 4 ) + (In the formula, R 1 、R 2 、R 3 、R 4 、R 5 , and R 6 each independently represents H, substituted or unsubstituted C 1-20 Preferably, the one or more second cations are selected from the group consisting of (CH 3 NH 3 ) + and (H 2 NC(H)=NH 2 ) + The method according to any one of aspects 1 to 4, wherein the method is selected from the group consisting of [6] The first precursor compound has the formula MX2 is a compound of Preferably, the first precursor compound has the formula PbI 2 , PbBr 2 , PbCl 2 , SnI 2 , SnBr 2 or SnCl 2 The method according to any one of aspects 1 to 5, wherein the compound is [7] The method further includes disposing a second precursor compound on the substrate, the second precursor compound comprising a second cation (A) and a second anion (X); The method of any one of aspects 1-6, wherein the second precursor compound is preferably a compound of the formula [A][X], wherein [A] comprises the one or more second cations and [X] comprises the one or more halide anions. [8] The precursor composition further comprises: The method of any one of aspects 1-7, comprising: (c) a second precursor compound comprising a second cation (A) and a second anion (X). [9] the second precursor compound is a compound of formula AX, Preferably, the second precursor compound is (H 2 NC(H)=NH 2 )I, (H 2 NC(H)=NH 2 )Br, (H 2 NC(H)=NH 2 )Cl, (CH 3 NH 3 )I, (CH 3 NH 3 )Br or (CH 3 NH 3 9. The method of claim 7 or 8, wherein R is H.

[10] The precursor composition further comprises: (d) Organic materials The method according to any one of aspects 1 to 9, comprising:

[11] 11. The method of embodiment 10, wherein the organic material is an organic dielectric material, an organic semiconductor material, an organic polymer, a fullerene derivative, an organic reducing agent, or an organic oxidizing agent.

[12] The organic material is Poly(4-butylphenyldiphenylamine), poly(N,N'-bis-4-butylphenyl-N,N'-bisphenyl)benzidine (polyTPD), poly(triarylamine) (PTAA), spiro-bifluorene compounds, spiro-OMeTAD, thiophene-containing polymers, poly(3-hexylthiophene), poly(3,4-ethylenedioxythiophene) (PEDOT), rylene derivatives, perylene, poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] an organic semiconductor material selected from poly(9,9-dioctylfluorenyl-2,7-diyl) (TFB), poly(9,9-dioctylfluorenyl-2,7-diyl) (F8), poly(9-vinylcarbazole) (PVK), 4,4'-bis(carbazol-9-yl)biphenyl (CBP), poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazole-4,7-diyl)] (F8BT), poly(3-hexylthiophene-2,5-diyl) (P3HT), phenyl-C61-butyric acid methyl ester (PCBM) and diphenylanthracene (DPA); an organic dielectric material selected from poly(methyl methacrylate) (PMMA), polystyrene, poly(vinyl acetate) and ethylene-vinyl acetate (EVA); or an organic reducing agent or an organic oxidizing agent selected from 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), hexafluorotetra-cyanonaphthoquinodimethane (F6TCNNQ), molybdenum compounds, molybdenum tris(dithiolene), pentamethylcyclopentadienyl cyclopentadienyl rhodium dimer, decamethylcobaltocene (DMC) and 3-dimethyl-2-phenyl-2,3-dihydro-1H-benzimidazole (N-DMBI); and 12. The method according to aspect 10 or 11, wherein the organic material is preferably polymethylmethacrylate or phenyl-C61-butyric acid methyl ester (PCBM).

[13] the solvent further comprises a second alkylamine; Preferably, [A] is a compound represented by the formula (R B NH 3 ) + and a second cation which is a cation of the formula R B NH 2 is a compound of R B are the same group, and C 1-8 is an alkyl group, 13. The method of any one of aspects 1 to 12, wherein the second cation is more preferably methylammonium and the second alkylamine is methylamine.

[14] The crystalline A / M / X material has the formula [A][M][X] 3 wherein [A] comprises the one or more second cations, [M] comprises the one or more first cations, and [X] comprises the one or more halide anions.

[15] The crystalline A / M / X material is formula CH 3 NH 3 PbI 3 , C.H. 3 NH 3 PbBr 3 , C.H. 3 NH 3 PbCl 3 , C.H. 3 NH 3 PbF 3 , C.H. 3 NH 3 PbBr x I 3-x , C.H. 3 NH 3 PbBr x Cl 3-x , C.H. 3 NH 3 PbI x Br 3-x , C.H. 3 NH 3 PbI x Cl 3-x , C.H. 3 NH 3 PbCl x F 3-x , C.H. 3 NH 3 PbI 3-x F x , C.H. 3 NH 3 SnI 3 , C.H. 3 NH 3 SnBr 3 , C.H. 3 NH 3 SnCl 3 , C.H. 3 NH 3 SnF 3 , C.H. 3 NH 3 SnBrI 2 , C.H. 3 NH 3 SnBr x I 3-x , C.H. 3 NH 3 SnBr x Cl 3-x , C.H. 3 NH 3 SnF 3-x Br x , C.H. 3 NH 3 SnI x Br 3-x , C.H. 3 NH 3 SnI x Cl 3-x , C.H. 3 NH 3 SnF 3-x I x , C.H. 3 NH 3 SnCl x Br 3-x , C.H. 3 NH 3 SnI 3-x Cl x , C.H. 3 NH 3 SnF 3-x Cl x , C.H. 3 NH 3 CuI 3 , C.H. 3 NH 3 CuBr 3 , C.H. 3 NH 3 CuCl 3 , C.H. 3 NH 3 CuF 3 , C.H. 3 NH 3 CuBrI 2 , C.H. 3 NH 3 CuBr x I 3-x , C.H. 3 NH 3 CuBr x Cl 3-x , C.H. 3 NH 3 CuF 3-x Br x , C.H. 3 NH 3 CuI x Br 3-x , C.H. 3 NH 3 CuI x Cl 3-x , C.H. 3 NH 3 CuF 3-x I x , C.H. 3 NH 3 CuCl x Br 3-x , C.H. 3 NH 3 CuI 3-x Cl x , or CH 3 NH 3 CuF 3-x Cl x (wherein x is 0 to 3); Formula (H 2 NC(H)=NH 2 )PbI 3 、(H 2 NC(H)=NH 2 )PbBr 3 、(H 2 NC(H)=NH 2 )(H 2 NC(H)=NH 2 )PbCl 3 、(H 2 NC(H)=NH 2 )PbF 3、(H 2 NC(H)=NH 2 )PbBr x I 3-x 、(H 2 NC(H)=NH 2 )PbBr x Cl 3-x 、(H 2 NC(H)=NH 2 )PbI x Br 3-x 、(H 2 NC(H)=NH 2 )PbI x Cl 3-x 、(H 2 NC(H)=NH 2 )PbCl x F 3-x 、(H 2 NC(H)=NH 2 )PbI 3-x F x 、(H 2 NC(H)=NH 2 )SnI 3 、(H 2 NC(H)=NH 2 )SnBr 3 、(H 2 NC(H)=NH 2 )SnCl 3 、(H 2 NC(H)=NH 2 )SnF 3 、(H 2 NC(H)=NH 2 )SnBrI 2 、(H 2 NC(H)=NH 2 )SnBr x I 3-x 、(H 2 NC(H)=NH 2 )SnBr x Cl 3-x 、(H 2 NC(H)=NH 2 )SnF 3-x Br x 、(H 2 NC(H)=NH 2 )SnI x Br3-x 、(H 2 NC(H)=NH 2 )SnI x Cl 3-x 、(H 2 NC(H)=NH 2 )SnF 3-x I x 、(H 2 NC(H)=NH 2 )SnCl x Br 3-x 、(H 2 NC(H)=NH 2 )SnI 3-x Cl x 、(H 2 NC(H)=NH 2 )SnF 3-x Cl x 、(H 2 NC(H)=NH 2 )CuI 3 、(H 2 NC(H)=NH 2 )CuBr 3 、(H 2 NC(H)=NH 2 )CuCl 3 、(H 2 NC(H)=NH 2 )CuF 3 、(H 2 NC(H)=NH 2 )CuBrI 2 、(H 2 NC(H)=NH 2 )CuBr x I 3-x 、(H 2 NC(H)=NH 2 )CuBr x Cl 3-x 、(H 2 NC(H)=NH 2 )CuF 3-x Br x 、(H 2 NC(H)=NH 2 )CuI x Br 3-x 、(H 2 NC(H)=NH 2 )CuI xCl 3-x 、(H 2 NC(H)=NH 2 )CuF 3-x I x 、(H 2 NC(H)=NH 2 )CuCl x Br 3-x 、(H 2 NC(H)=NH 2 )CuI 3-x Cl x , or (H 2 NC(H)=NH 2 )CuF 3-x Cl x (wherein x is 0 to 3); or Formula (H 2 NC(H)=NH 2 ) y Cs 1-y PbI 3 、(H 2 NC(H)=NH 2 ) y Cs 1-y PbBr 3 、(H 2 NC(H)=NH 2 ) y Cs 1-y PbCl 3 、(H 2 NC(H)=NH 2 ) y Cs 1-y PbF 3 、(H 2 NC(H)=NH 2 ) y Cs 1-y PbBr x I 3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y PbBr x Cl3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y PbI x Br 3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y PbI x F 3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y PbCl x F 3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y PbBr 3-x F x 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnI 3 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnBr 3 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnCl 3 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnF 3 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnBrI 2 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnBr x I 3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnBr x Cl 3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnF 3-x Br x 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnI x Br 3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnI x Cl 3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnF 3-x I x 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnCl x Br 3-x 、(H 2 NC(H)=NH 2 ) y Cs1-y SnI 3-x Cl x 、(H 2 NC(H)=NH 2 ) y Cs 1-y SnF 3-x Cl x 、(H 2 NC(H)=NH 2 ) y Cs 1-y CuI 3 、(H 2 NC(H)=NH 2 ) y Cs 1-y CuBr 3 、(H 2 NC(H)=NH 2 ) y Cs 1-y CuCl 3 、(H 2 NC(H)=NH 2 ) y Cs 1-y CuF 3 、(H 2 NC(H)=NH 2 ) y Cs 1-y CuBrI 2 、(H 2 NC(H)=NH 2 ) y Cs 1-y CuBr x I 3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y CuBr x Cl 3-x 、(H 2 NC(H)=NH 2 ) y Cs1-y CuF 3-x Br x 、(H 2 NC(H)=NH 2 ) y Cs 1-y CuI x Br 3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y CuI x Cl 3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y CuF 3-x I x 、(H 2 NC(H)=NH 2 ) y Cs 1-y CuCl x Br 3-x 、(H 2 NC(H)=NH 2 ) y Cs 1-y CuI 3-x Cl x , or (H 2 NC(H)=NH 2 ) y Cs 1-y CuF 3-x Cl x (wherein x is 0 to 3, and y is 0.1 to 0.9) 15. The method according to any one of aspects 1 to 14, comprising:

[16] 16. The method of any one of aspects 7 to 15, wherein the molar ratio of (first precursor compound):(second precursor compound) is 1:2 to 2:1.

[17] 17. The method of any one of the preceding aspects, further comprising removing the solvent to form the layer comprising the crystalline A / M / X material.

[18] further comprising heating the substrate having the precursor composition disposed thereon; Preferably, the substrate is heated to a temperature of 50°C to 200°C; More preferably, the method according to any one of aspects 1 to 17, wherein the substrate is heated to a temperature of from 50° C. to 200° C. for a period of from 1 to 100 minutes.

[19] (a) PbI 2 and, (b) a solvent comprising toluene and butylamine; (c)(CH 3 NH 3 )I and, 19. The method of any one of embodiments 1-18, comprising disposing on a substrate a precursor composition comprising:

[20] The method further comprises exposing the substrate on which the precursor composition is disposed to a conversion compound, the conversion compound having the formula R C NH 2 Or (R C NH 3 )X(wherein, R C is C 1-4 is an alkyl group and X is a halide anion; 20. The method according to any one of aspects 1 to 19, wherein the conversion compound is preferably methylamine or methylammonium halide.

[21] 21. The method of embodiment 20, wherein exposing the substrate on which the precursor composition is disposed to a conversion compound comprises exposing the substrate on which the precursor composition is disposed to a vapor comprising the conversion compound.

[22] 22. The method of embodiment 21, wherein exposing the substrate on which the precursor composition is disposed to a vapor comprising the conversion compound comprises exposing the substrate on which the precursor composition is disposed to a vapor comprising the conversion compound at a pressure of at least 500 mbar (50 kPa).

[23] A method for manufacturing a semiconductor device, comprising the method according to any one of embodiments 1 to 22.

[24] (i) Formula MX n (Wherein, M is Ca 2+ 、Sr 2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Yb 2+ ,EU 2+ , Bi 3+ , Sb 3+ , Pd 4+ 、W 4+ , Re 4+ , Os 4+ 、Ir 4+ , Pt 4+ , Sn 4+ , Pb 4+ , Ge 4+ or Te 4+ , preferably Cu 2+ , Pb 2+ , Ge 2+ Or Sn 2+ and X is I - 、Br - 、Cl - or F - and n is 2, 3 or 4; (ii) a compound of formula AX, where A is (R 1 NH 3 ) + , (NR 2 4 ) + and (H 2 NC(R 1 )=NH 2 ) + and R 1 is H or unsubstituted C 1-6 is an alkyl group, R 2 are unsubstituted C 1-6 is an alkyl group, and X is I - 、Br - 、Cl - or F - and a compound of formula (I) (iii) a non-polar organic solvent which is a hydrocarbon solvent, a chlorohydrocarbon solvent, or an ether solvent; (iv) a first organic amine containing at least three carbon atoms; A composition comprising:

[25] The composition, (i) PbI 2 , PbBr 2 or PbCl 2 and; (ii) (H 2 NC(H)=NH 2 )I, (H 2 NC(H)=NH 2 )Br, (H 2 NC(H)=NH 2 )Cl, (CH 3 NH 3 )I, (CH 3 NH 3 )Br or (CH 3 NH 3 )Cl and; (iii) with toluene or chlorobenzene; (iv) butylamine 25. The composition of embodiment 24, comprising:

[26] The composition (i) PbI 2 and; (ii) (CH 3 NH 3 )I or (H 2 NC(H)=NH 2 )I and; (iii) toluene; (iv) butylamine; (v) Methylamine 26. The composition of any one of the preceding claims, comprising:

Claims

1. A method for producing a layer of a crystalline A / M / X material, the crystalline A / M / X material having the formula [A] ａ [M] ｂ [X] ｃ wherein [M] comprises one or more first cations, the one or more first cations being metal cations or metalloid cations; [A] comprises one or more second cations; [X] comprises one or more halide anions; a is an integer from 1 to 6; b is an integer from 1 to 6; and c is an integer from 1 to 18; The method includes disposing a precursor composition on a substrate, the precursor composition comprising: (a) a first precursor compound comprising a first cation (M) that is a metal cation or a metalloid cation and a first anion that is a halide anion; (b) a solvent; Including, The solvent is (i) a non-polar organic solvent which is toluene, benzene, xylene, chlorobenzene, dichlorobenzene, chloroform, anisole, hexane, pentane, cyclohexane or cyclopentane; (ii) a first organic amine containing at least three carbon atoms; the solvent comprises the non-polar organic solvent and the first organic amine in a volume ratio of (non-polar organic solvent):(first organic amine) of 40:1 to 1:2; The method further comprises disposing a second precursor compound on the substrate, the second precursor compound comprising a second cation (A) and a second anion (X).

2. The method of claim 1, wherein the non-polar organic solvent is toluene or chlorobenzene.

3. The first organic amine is represented by the formula R Ａ N.H. ２ or a first alkylamine of the formula ArNH ２ a first arylamine of formula R Ａ is optionally substituted with a phenyl group; ３－２０ Ar is an alkyl group having 1 to 3 C １－６ a phenyl group optionally substituted with an alkyl group; Preferably, the first organic amine is a first alkylamine which is propylamine, butylamine, pentylamine, hexylamine or phenylethylamine; 3. The method of claim 1 or 2, wherein the first alkylamine is butylamine.

4. 4. The method of claim 1, wherein the solvent comprises the non-polar organic solvent and the first organic amine in a volume ratio of (non-polar organic solvent):(first organic amine) of 20:1 to 4:

1.

5. The one or more first cations are Ca ２＋ , Sr ２＋ , Cd ２＋ , Cu ２＋ , Ni ２＋ , Mn ２＋ , Fe ２＋ , Co ２＋ , Pd ２＋ , Ge ２＋ , Sn ２＋ , Pb ２＋ , Yb ２＋ , Eu ２＋ , Bi ３＋ , Sb ３＋ , Pd ４＋ , W ４＋ , R ４＋ , Os ４＋ , Ir ４＋ , Pt ４＋ , Sn ４＋ , Pb ４＋ , Ge ４＋ , and Te ４＋ Preferably, the one or more first cations are selected from Cu ２＋ , Pb ２＋ , Ge ２＋ , and Sn ２＋ is selected from The one or more second cations are represented by the formula Cs ＋ , (NR １ R ２ R ３ R ４ ) ＋ , (R １ R ２ N=CR ３ R ４ ) ＋ , (R １ R ２ N-C(R ５ ) = NR ３ R ４ ) ＋ , and (R １ R ２ N-C (N ５ R ６ ) = NR ３ R ４ ) ＋ (In the formula, R １ , R ２ , R ３ , R ４ , R ５ , and R ６ each independently represents H, substituted or unsubstituted C １－２０ Preferably, the one or more second cations are selected from the group consisting of (CH ３ N.H. ３ ) ＋ And (H ２ N-C(H)=NH ２ ) ＋ The method according to any one of claims 1 to 4, wherein the compound is selected from the group consisting of

6. The first precursor compound has the formula MX ２ is a compound of Preferably, the first precursor compound has the formula PbI ２ , PbBr ２ , PbCl ２ , SnI ２ , SnBr ２ or SnCl ２ The method according to any one of claims 1 to 5, wherein the compound is 7. The method of claim 1, wherein the second anion (X) is a halide anion.

8. The method of claim 1, wherein the second precursor compound is a compound of the formula [A][X], wherein [A] comprises the second cation and [X] comprises the second anion.

9. The precursor composition further comprises:

9. The method of claim 7 or 8, further comprising: (c) providing said second precursor compound comprising said second cation (A) and said second anion (X).

10. the second precursor compound is a compound of formula AX, Preferably, the second precursor compound is (H ２ N-C(H)=NH ２ ) I, (H ２ N-C(H)=NH ２ )Br, (H ２ N-C(H)=NH ２ )Cl, (CH ３ N.H. ３ ) I, (CH ３ N.H. ３ )Br or (CH ３ N.H. ３ 10. The method according to claim 7, wherein said aryl group is aryl.

11. The precursor composition further comprises: (d) Organic materials Including, The method according to any one of claims 1 to 10, wherein the organic material is an organic dielectric material, an organic semiconductor material, an organic polymer, a fullerene derivative, an organic reducing agent or an organic oxidizing agent.

12. The organic material is Poly(4-butylphenyldiphenylamine), poly(N,N'-bis-4-butylphenyl-N,N'-bisphenyl)benzidine (polyTPD), poly(triarylamine) (PTAA), spiro-bifluorene compounds, spiro-OMeTAD, thiophene-containing polymers, poly(3-hexylthiophene), poly(3,4-ethylenedioxythiophene) (PEDOT), rylene derivatives, perylene, poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] an organic semiconductor material selected from poly(9,9-dioctylfluorenyl-2,7-diyl) (TFB), poly(9,9-dioctylfluorenyl-2,7-diyl) (F8), poly(9-vinylcarbazole) (PVK), 4,4'-bis(carbazol-9-yl)biphenyl (CBP), poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazole-4,7-diyl)] (F8BT), poly(3-hexylthiophene-2,5-diyl) (P3HT), phenyl-C61-butyric acid methyl ester (PCBM) and diphenylanthracene (DPA); an organic dielectric material selected from poly(methyl methacrylate) (PMMA), polystyrene, poly(vinyl acetate) and ethylene-vinyl acetate (EVA); or an organic reducing agent or an organic oxidizing agent selected from 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), hexafluorotetra-cyanonaphthoquinodimethane (F6TCCNNQ), a molybdenum compound, molybdenum tris(dithiolene), pentamethylcyclopentadienyl cyclopentadienyl rhodium dimer, decamethylcobaltocene (DMC), and 3-dimethyl-2-phenyl-2,3-dihydro-1H-benzimidazole (N-DMBI); and The method according to claim 11, wherein the organic material is preferably polymethylmethacrylate or Phenyl-C61-butyric acid methyl ester (PCBM).

13. the solvent further comprises a second alkylamine; Preferably, [A] is a compound represented by the formula (R Ｂ N.H. ３ ) ＋ and a second cation which is a cation of the formula R Ｂ N.H. ２ is a compound of formula R Ｂ are the same group, C １－８ is an alkyl group, A method according to any one of claims 1 to 12, more preferably wherein said second cation is methylammonium and said second alkylamine is methylamine.

14. The crystalline A / M / X material has the formula [A][M][X] ３ wherein [A] comprises the one or more second cations, [M] comprises the one or more first cations, and [X] comprises the one or more halide anions.

15. The crystalline A / M / X material is Formula CH ３ NH ３ PbI ３ 、CH ３ NH ３ PbBr ３ 、CH ３ NH ３ PbCl ３ 、CH ３ NH ３ PbF ３ 、CH ３ NH ３ PbBr ｘ I ３－ｘ 、CH ３ NH ３ PbBr ｘ Cl ３－ｘ 、CH ３ NH ３ PbI ｘ Br ３－ｘ 、CH ３ NH ３ PbI ｘ Cl ３－ｘ 、CH ３ NH ３ PbCl ｘ F ３－ｘ 、CH ３ NH ３ PbI ３－ｘ F ｘ 、CH ３ NH ３ SnI ３ 、CH ３ NH ３ SnBr ３ 、CH ３ NH ３ SnCl ３ 、CH ３ NH ３ SnF ３ 、CH ３ NH ３ SnBrI ２ 、CH ３ NH ３ SnBr ｘ I ３－ｘ 、CH ３ NH ３ SnBr ｘ Cl ３－ｘ 、CH ３ NH ３ SnF ３－ｘ Br ｘ 、CH ３ NH ３ SnI ｘ Br ３－ｘ CH ３ NH ３ SnI ｘ Cl ３－ｘ CH ３ NH ３ H ３－ｘ I ｘ CH ３ NH ３ P. ｘ Br ３－ｘ CH ３ NH ３ SnI ３－ｘ Cl ｘ CH ３ NH ３ H ３－ｘ Cl ｘ CH ３ NH ３ CuI ３ CH ３ NH ３ 4. ３ CH ３ NH ３ CuCl ３ CH ３ NH ３ CuF ３ CH ３ NH ３ 4. ２ CH ３ NH ３ 4. ｘ I ３－ｘ CH ３ NH ３ 4. ｘ Cl ３－ｘ CH ３ NH ３ CuF ３－ｘ Br ｘ CH ３ NH ３ CuI ｘ Br ３－ｘ CH ３ NH ３ CuI ｘ Cl ３－ｘ CH ３ NH ３ CuF ３－ｘ I ｘ CH ３ NH ３ CuCl ｘ B ３－ｘ , C.H. ３ N.H. ３ CuI ３－ｘ C ｘ , or C.H. ３ N.H. ３ CuF ３－ｘ C ｘ (wherein x is 0 to 3); Formula (H ２ N-C(H)=NH ２ )PbI ３ 、(H ２ N-C(H)=NH ２ )PbBr ３ 、(H ２ N-C(H)=NH ２ )(H ２ N-C(H)=NH ２ )PbCl ３ 、(H ２ N-C(H)=NH ２ )PbF ３ 、(H ２ N-C(H)=NH ２ )PbBr ｘ I ３－ｘ 、(H ２ N-C(H)=NH ２ )PbBr ｘ Cl ３－ｘ 、(H ２ N-C(H)=NH ２ )PbI ｘ Br ３－ｘ 、(H ２ N-C(H)=NH ２ )PbI ｘ Cl ３－ｘ 、(H ２ N-C(H)=NH ２ )PbCl ｘ F ３－ｘ 、(H ２ N-C(H)=NH ２ )PbI ３－ｘ F ｘ 、(H ２ N-C(H)=NH ２ )SnI ３ 、(H ２ N-C(H)=NH ２ )SnBr ３ 、(H ２ N-C(H)=NH ２ )SnCl ３ 、(H ２ N-C(H)=NH ２ )SnF ３ 、(H ２ N-C(H)=NH ２ )SnBrI ２ 、(H ２ N-C(H)=NH ２ )SnBr ｘ I ３－ｘ 、(H ２ P.S. ２ )SnBr ｘ Cl ３－ｘ 、(H ２ P.S. ２ )SnF ３－ｘ Br ｘ 、(H ２ P.S. ２ )SnI ｘ Br ３－ｘ 、(H ２ P.S. ２ )SnI ｘ Cl ３－ｘ 、(H ２ P.S. ２ )SnF ３－ｘ I ｘ 、(H ２ P.S. ２ )SnCl ｘ Br ３－ｘ 、(H ２ P.S. ２ )SnI ３－ｘ Cl ｘ 、(H ２ P.S. ２ )SnF ３－ｘ Cl ｘ 、(H ２ P.S. ２ )CuI ３ 、(H ２ P.S. ２ )CuBr ３ 、(H ２ P.S. ２ )CuCl ３ 、(H ２ P.S. ２ )CuF ３ 、(H ２ P.S. ２ )CuBrI ２ 、(H ２ P.S. ２ )CuBr ｘ I ３－ｘ 、(H ２ P.S. ２ )CuBr ｘ Cl ３－ｘ , (H ２ N-C(H)=NH ２ ) CuF ３－ｘ B ｘ , (H ２ N-C(H)=NH ２ ) CuI ｘ B ３－ｘ , (H ２ N-C(H)=NH ２ ) CuI ｘ C ３－ｘ , (H ２ N-C(H)=NH ２ ) CuF ３－ｘ I ｘ , (H ２ N-C(H)=NH ２ ) CuCl ｘ B ３－ｘ , (H ２ N-C(H)=NH ２ ) CuI ３－ｘ C ｘ , or (H ２ N-C(H)=NH ２ ) CuF ３－ｘ C ｘ where x is 0 to 3; or Formula (H ２ N-C(H)=NH ２ ). ｙ Cs １－ｙ PbI ３ 、(H ２ N-C(H)=NH ２ ). ｙ Cs １－ｙ PbBr ３ 、(H ２ N-C(H)=NH ２ ). ｙ Cs １－ｙ PbCl ３ 、(H ２ N-C(H)=NH ２ ). ｙ Cs １－ｙ PbF ３ 、(H ２ N-C(H)=NH ２ ). ｙ Cs １－ｙ PbBr ｘ I ３－ｘ 、(H ２ N-C(H)=NH ２ ). ｙ Cs １－ｙ PbBr ｘ Cl ３－ｘ 、(H ２ N-C(H)=NH ２ ). ｙ Cs １－ｙ PbI ｘ Br ３－ｘ 、(H ２ N-C(H)=NH ２ ). ｙ Cs １－ｙ PbI ｘ F ３－ｘ 、(H ２ N-C(H)=NH ２ ). ｙ Cs １－ｙ PbCl ｘ F ３－ｘ 、(H ２ N-C(H)=NH ２ ). ｙ Cs １－ｙ PbBr ３－ｘ F ｘ 、(H ２ N-C(H)=NH ２ ). ｙ Cs １－ｙ SnI ３ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ B. ３ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ P. ３ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ H ３ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ P.S. ２ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ B. ｘ I ３－ｘ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ B. ｘ Cl ３－ｘ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ H ３－ｘ Br ｘ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ SnI ｘ Br ３－ｘ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ SnI ｘ Cl ３－ｘ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ H ３－ｘ I ｘ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ P. ｘ Br ３－ｘ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ SnI ３－ｘ Cl ｘ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ H ３－ｘ Cl ｘ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ CuI ３ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ 4. ３ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ CuCl ３ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ CuF ３ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ 4. ２ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ 4. ｘ I ３－ｘ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ 4. ｘ Cl ３－ｘ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ CuF ３－ｘ Br ｘ 、(H ２ P.S. ２ ) ｙ Cs １－ｙ CuI ｘ B ３－ｘ , (H ２ N-C(H)=NH ２ ) ｙ Cs １－ｙ CuI ｘ C ３－ｘ , (H ２ N-C(H)=NH ２ ) ｙ Cs １－ｙ CuF ３－ｘ I ｘ , (H ２ N-C(H)=NH ２ ) ｙ Cs １－ｙ CuCl ｘ B ３－ｘ , (H ２ N-C(H)=NH ２ ) ｙ Cs １－ｙ CuI ３－ｘ C ｘ , or (H ２ N-C(H)=NH ２ ) ｙ Cs １－ｙ CuF ３－ｘ C ｘ (wherein x is 0 to 3 and y is 0.1 to 0.9) The method according to any one of claims 1 to 14, comprising:

16. 16. The method of any one of claims 1 to 15, wherein the molar ratio of (first precursor compound):(second precursor compound) is from 1:2 to 2:

1.

17. The method of any one of claims 1 to 16, further comprising removing the solvent to form the layer comprising the crystalline A / M / X material.

18. further comprising heating the substrate having the precursor composition disposed thereon; Preferably, the substrate is heated to a temperature between 50° C. and 200° C. More preferably, the method according to any one of the preceding claims, wherein the substrate is heated to a temperature between 50°C and 200°C for a time period between 1 and 100 minutes.

19. The precursor composition comprising: (a) PbI ２ and, (b) a solvent comprising toluene and butylamine; (c)(CH ３ NH ３ ) The method according to any one of claims 1 to 18, comprising:

20. The method further comprises exposing the substrate on which the precursor composition is disposed to a conversion compound, the conversion compound having the formula R Ｃ N.H. ２ Or (R Ｃ N.H. ３ )X (wherein, R Ｃ is C １－４ and X is an alkyl group and X is a halide anion; A method according to any one of claims 1 to 19, wherein the conversion compound is preferably methylamine or methylammonium halide.

21. 21. The method of claim 20, wherein exposing the substrate on which the precursor composition is disposed to a conversion compound comprises exposing the substrate on which the precursor composition is disposed to a vapor comprising the conversion compound.

22. 22. The method of claim 21 , wherein exposing the substrate on which the precursor composition is disposed to a vapor comprising the conversion compound comprises exposing the substrate on which the precursor composition is disposed to a vapor comprising the conversion compound at a pressure of at least 500 mbar (50 kPa).

23. A method for manufacturing a semiconductor device comprising the method of any one of claims 1 to 22.

24. (i) Formula MX ｎ (Wherein, M is Ca ２＋ , Sr ２＋ , Cd ２＋ , Cu ２＋ , Ni ２＋ , Mn ２＋ , Fe ２＋ , Co ２＋ , Pd ２＋ , Ge ２＋ , Sn ２＋ , Pb ２＋ , Yb ２＋ , Eu ２＋ , Bi ３＋ , Sb ３＋ , Pd ４＋ , W ４＋ , R ４＋ , Os ４＋ , Ir ４＋ , Pt ４＋ , Sn ４＋ , Pb ４＋ , Ge ４＋ Or Te ４＋ , preferably Cu ２＋ , Pb ２＋ , Ge ２＋ Or Sn ２＋ and X is I － , B － , Cl － Or F － and n is 2, 3 or 4; (ii) a compound of formula AX, where A is (R １ N.H. ３ ) ＋ , (NR ２ ４ ) ＋ And (H ２ N-C(R １ ) = NH ２ ) ＋ and R １ is H or unsubstituted C １－６ is an alkyl group, R ２ are unsubstituted C １－６ is an alkyl group, and X is I － , B － , Cl － Or F － and a compound of formula (I) (iii) a non-polar organic solvent which is toluene, benzene, xylene, chlorobenzene, dichlorobenzene, chloroform, anisole, hexane, pentane, cyclohexane or cyclopentane; (iv) a first organic amine containing at least three carbon atoms; wherein the composition comprises the non-polar organic solvent and the first organic amine in a volume ratio of (non-polar organic solvent):(first organic amine) of 40:1 to 1:

2.

25. The composition, (i) PbI ２ , PbBr ２ or PbCl ２ and; (ii) (H ２ N-C(H)=NH ２ )I, (H ２ N-C(H)=NH ２ )Br, (H ２ N-C(H)=NH ２ )Cl, (CH ３ NH ３ )I, (CH ３ NH ３ )Br or (CH ３ NH ３ )Cl; (iii) with toluene or chlorobenzene; (iv) butylamine 25. The composition of claim 24 comprising:

26. The composition (i) PbI ２ and; (ii) (CH ３ N.H. ３ ) I or (H ２ N-C(H)=NH ２ ) I and; (iii) toluene; (iv) butylamine; (v) methylamine 26. The composition of claim 24 or 25, comprising:

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