Plasma generating device, plasma processing device, and plasma etching device for seamless roller mold

Abstract

In order to enable generation of more dense plasma in a vessel with a greater volume, the plasma generation device according to the present disclosure is provided with a high-frequency circuit (20) that has an inductive load and a high-frequency power source (22) that supplies high-frequency electric power to the inductive load, and a reactor vessel that is configured so as to be able to be depressurized and that generates a plasma by applying high-frequency electric power to the inductive load. The inductive load is constituted by a spiral antenna coil (21) that is arranged so as to wind around the reactor vessel, the antenna coil being divided into at least two or more parts. The high-frequency circuit (20) has a plurality of paths (23) where each of the at least two or more parts of the antenna coil (21) are provided.

Description

[Technical field]

[0001] The present invention relates to a plasma generating device, a plasma processing device, and a plasma etching device for seamless roller molds. [Background technology]

[0002] Plasma generators are used in various processes such as thin film formation on substrates, ion implantation, dry etching, etc. Inductively coupled plasma (ICP) uses an antenna coil, which is an inductive load, and a high-frequency circuit with a high-frequency power source, and generates plasma by supplying high-frequency power to the antenna coil.

[0003] For example, Patent Document 1 and Patent Document 2 disclose a plasma generating device for processing fine particles by plasma treatment. The plasma generating device includes a reaction vessel (cylindrical tube) that generates plasma and in which fine particles, which are objects to be processed, flow, and a spiral antenna coil that is an inductive load surrounding the reaction vessel and constitutes a high-frequency circuit. The antenna coil induces a standing wave by resonating in a specific wavelength mode, and generates an induced electric field in the reaction vessel. This generates plasma in the reaction vessel due to inductive coupling.

[0004] In such plasma processing of the workpiece, it is preferable to generate a denser plasma in a larger capacity container, as this can improve the processing speed of the workpiece by plasma processing. Furthermore, Patent Document 3 discloses a plasma etching device for roll molds, which is preferable in that when etching a roll-shaped substrate having a curved surface, etching is performed in a direction perpendicular to the surface. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2010-131577 A [Patent Document 2] JP 2012-55840 A [Patent Document 3] JP 2012-158178 A Summary of the Invention [Problem to be solved by the invention]

[0006] However, with the configurations described in Patent Documents 1 and 2, it is difficult to increase the capacity of the vessel for generating plasma.

[0007] In other words, if the capacity of the container is to be increased, the number of turns of the coil, which is an inductive load, must be increased accordingly, i.e., the coil length must be increased. On the other hand, making the antenna coil infinitely long is not appropriate because it narrows the scope for selecting electric elements such as capacitors that satisfy the resonance conditions in a specific wavelength mode.

[0008] Therefore, in order to solve the above problems, an object of the present invention is to provide a plasma generating device, a plasma processing device, and a plasma etching device for seamless roller molds that are capable of generating a higher density plasma in a larger capacity container. [Means for solving the problem]

[0009] A plasma generating device according to one aspect of the present invention comprises: A high frequency circuit including an inductive load and a high frequency power supply that supplies high frequency power to the inductive load; A reactor vessel configured to be decompressible and capable of generating plasma by applying high frequency power to an inductive load, The inductive load is composed of a spiral antenna coil arranged around the reaction vessel. The antenna coil is divided into at least two or more parts, The high frequency circuit is a plasma generating device having a plurality of paths each provided with an antenna coil divided into at least two or more portions.

[0010] According to the plasma generator of the above aspect, by dividing the antenna coil, it is possible to maintain the coil wire length of each antenna coil within a predetermined wavelength and to select a capacitor that reduces the inductance and satisfies the resonance condition, which makes it possible to generate a higher density plasma in a larger capacity container.

[0011] In the plasma generating device of the above aspect, the reaction vessel may be cylindrical with the same axis as the antenna coil, the inner diameter of the reaction vessel may be smaller than the diameter of the antenna coil, and the antenna coil may be disposed outside the reaction vessel.

[0012] In the plasma generating device of the above aspect, the reaction vessel may include a plurality of gas inlets for introducing reactive gases into the reaction vessel from different positions.

[0013] In the plasma generation device of the above aspect, each of the multiple paths may be connected in parallel to the high-frequency power source, and the high-frequency circuit may be configured such that the high-frequency power source supplies high-frequency power in the same frequency band to the multiple paths.

[0014] In the plasma generation device of the above aspect, the high frequency circuit may include a ground electrode to which the ends of the multiple paths opposite to the high frequency power supply are commonly connected.

[0015] In the plasma generation device of the above aspect, any one of the plurality of paths may have an adjustment coil on the opposite side of the high frequency power supply with respect to the antenna coil.

[0016] In the plasma generation device of the above aspect, the adjustment coil may be a coil whose inductance is variable.

[0017] In the plasma generation device of the above aspect, each of the multiple paths may have a capacitor having a predetermined impedance on the opposite side of the adjustment coil to the antenna coil.

[0018] In the plasma generation device of the above aspect, at least one of the plurality of capacitors may be a capacitor with variable impedance.

[0019] In the plasma generation device of the above aspect, each of the multiple paths may have a plurality of capacitors, each having a predetermined impedance, arranged in parallel on the same side as the adjustment coil when viewed from the antenna coil.

[0020] In the plasma generation device of the above aspect, at least one of the plurality of capacitors may be a capacitor with variable impedance.

[0021] In the plasma generation device of the above aspect, each of the antenna coils may have a number of turns greater than one.

[0022] The plasma generator of the above aspect includes a processor, a memory in which software for executing a predetermined process is stored, and a control device for controlling a high-frequency circuit, The high frequency circuit is a first capacitor having a variable impedance that is provided between the high frequency power source and the plurality of paths; a second capacitor having variable impedance, the second capacitor being provided on a path that branches off from between the high frequency power supply and the first capacitor and has the other end connected to a ground electrode; having The memory stores a program for adjusting the capacitance of the first capacitor and the second capacitor, The memory further stores a reference data table including an output of the high frequency power supply and initial and target capacitance values ​​of the first and second capacitors corresponding to the output; The controller may be a plasma generator that adjusts the capacitance of the first capacitor and the second capacitor based on a program and a look-up data table.

[0023] In the plasma generation device of the above aspect, the memory further stores information regarding a degree of fluctuation when adjusting the capacitance of the first capacitor and the second capacitor, The controller may further adjust a capacitance of the first capacitor and the second capacitor based on the degree of variation.

[0024] Another aspect of the present invention is a plasma generating apparatus comprising: a high-frequency circuit having an inductive load and a high-frequency power source that supplies high-frequency power to the inductive load; and a reaction vessel configured to be decompressible and in which plasma is generated by applying high-frequency power to the inductive load; The inductive load is composed of a spiral antenna coil arranged around the reaction vessel. The antenna coil is divided into at least two or more parts, The reaction vessel includes a workpiece accommodation portion for accommodating a workpiece, The workpiece accommodation portion is a plasma processing apparatus that is disposed inside a space surrounded by an antenna coil.

[0025] The reaction vessel in the plasma processing apparatus of the above aspect may further include a plurality of gas inlet parts for introducing a reaction gas into the reaction vessel from different positions.

[0026] Yet another aspect of the present invention is a plasma generating apparatus comprising: a high-frequency circuit having an inductive load and a high-frequency power source that supplies high-frequency power to the inductive load; and a reaction vessel configured to be decompressible and in which plasma is generated by applying high-frequency power to the inductive load; The inductive load is composed of a spiral antenna coil arranged around the reaction vessel. The antenna coil is divided into at least two or more parts, The reaction vessel includes a workpiece accommodation portion for accommodating a workpiece, The workpiece accommodation section is a plasma etching device for seamless roller molds, which is disposed inside a space surrounded by an antenna coil.

[0027] The reaction vessel in the plasma etching apparatus for a seamless roller mold of the above aspect may further include a plurality of gas inlet parts for introducing reaction gases into the reaction vessel from different positions. Effect of the Invention

[0028] According to the present invention, it is possible to provide a plasma generating apparatus, a plasma processing apparatus, and a plasma etching apparatus for seamless roller molds that are capable of generating a higher density plasma in a container with a larger capacity. [Brief description of the drawings]

[0029] [Figure 1] 1 is an overall view showing an outline of a plasma generation device according to the present disclosure. [Diagram 2] 2 is a perspective view showing the internal configuration of a vertical cross section of a reaction vessel of the plasma generating device. FIG. [Diagram 3] FIG. 1 is a diagram showing, for reference, an example of a high-frequency circuit in a conventional plasma generating device. [Figure 4] FIG. 2 is a diagram showing an example of a high-frequency circuit of a plasma generation device according to the present disclosure. [Diagram 5] 1 is a graph showing the relationship between the number of coil turns and the capacitance (Ct) of a capacitor during resonance. [Figure 6] FIG. 13 is a diagram illustrating a change in input impedance due to length when a short-circuit load is applied. [Figure 7] FIG. 4 is a diagram showing a high-frequency circuit of a plasma generation device according to a second embodiment of the present disclosure. [Figure 8] 13A to 13C are diagrams illustrating a method for adjusting a control device and a high-frequency circuit of a plasma generation device according to a third embodiment of the present disclosure. [Figure 9]10 is a flowchart showing an example of a capacitance adjustment process of variable capacitors CT, CL by a control device of a plasma generation device. [Figure 10] FIG. 8 is a diagram showing a modification of the high-frequency circuit of the plasma generation device shown in FIG. 7, in which the number of divisions of the antenna coil is simplified from four to two. [Figure 11] FIG. 11 is a diagram showing a modification of the high-frequency circuit of the plasma generation device shown in FIG. 10, in which a capacitor having a predetermined impedance is connected in parallel on the same side as the adjustment coil when viewed from the antenna coil. [Figure 12] 10A is a graph showing the change over time of the high-frequency currents I(L1) and I(L2) flowing through each of the paths (23a, 23b) in the case where the inductances of the antenna coils L1 and L2 are equal, the inductances of the adjustment coils Ls1 and Ls2 are equal, and the impedances of the current distribution capacitors C1 and C2 are equal in the high-frequency circuit shown in FIG. 10; and FIG. 10B is a graph showing the change over time of the high-frequency currents I(L1) and I(L2) when only the impedance of the capacitor C2 is changed under the condition of (a) above. [Figure 13] 12(a) is a graph showing the change over time of the high-frequency currents I(L1) and I(L2) flowing through each of the paths (23a, 23b) in the high-frequency circuit shown in FIG. 11 when the inductances of the antenna coils L1 and L2 are equal, the inductances of the adjustment coils Ls1 and Ls2 are equal, the impedances of the current distribution capacitors C1 and C2 are equal, and the impedances of the second current distribution capacitors C3 and C4 are equal; and (b) is a graph showing the change over time of the high-frequency currents I(L1) and I(L2) when only the impedance of the capacitor C2 is changed under the condition of (a) above. [Figure 14] FIG. 13 is a diagram showing, for reference, another example of a high-frequency circuit in a conventional plasma generating device (an example in which a high-frequency power source is connected to an object to be processed). [Figure 15] FIG. 13 is a diagram showing another example of the high-frequency circuit of the plasma generation device according to the present disclosure (an example in which a high-frequency power source is connected to an object to be processed). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] Hereinafter, the configuration of the present disclosure will be described in detail based on an example of an embodiment shown in the drawings.

[0031] An example of a plasma generating device according to the present disclosure is shown in Fig. 1 and the like. The plasma generating device 10 can be used, for example, as a device for generating plasma when etching a mold to be processed. As an example, the plasma generating device 10 as a roll dry etching (RDE) device is configured to convert a gas (e.g., SF6, O2) introduced into the inside of a discharge tube 37 through a gas introduction tube 36 into plasma by a magnetic field and induction electrolysis generated in an antenna coil 21 as an inductive load, and to form fine irregularities on the surface of a mold 100 by using ionized ions (fluorine ions) (see Figs. 1 and 2 and the like).

[0032] The type and configuration of the mold 100 as the object to be processed are not particularly limited, and include things like seamless roller molds (seamless cylindrical plates). Although detailed explanations are omitted, seamless roller molds are plates on which a pattern is formed seamlessly over the entire circumference, making them suitable for high-resolution roll-to-roll reverse offset printing and high-definition roll-to-roll imprinting. A plasma generator used for surface treatment (plasma treatment) of such seamless roller molds can be used as a plasma treatment device or a plasma etching device for seamless roller molds.

[0033] [First embodiment] An example of such a device, a plasma generator 10 of the present embodiment, will be described below. The plasma generator 10 of the present embodiment is configured as a device including a high-frequency circuit 20, a reaction vessel 30, a control device 40, etc. (see FIG. 4, etc.). The high-frequency circuit 20 includes an antenna coil 21, a high-frequency power source 22, a path 23, a ground electrode 24, etc. The high-frequency circuit 20 also includes an adjustment coil Ls, a variable capacitor C T, variable capacitor C L It may also include the following.

[0034] The high-frequency circuit 20 in the present disclosure includes an antenna coil that is an inductive load for generating plasma, and a high-frequency power source 22 that supplies high-frequency power to the antenna coil. The high-frequency circuit 20 in the present disclosure also includes a first variable capacitor C T and variable capacitor C T A second variable capacitor C is provided on the path 23, which is branched from the path 23 between the high frequency power source and the ground electrode 24. L Includes.

[0035] The high-frequency circuit 20 includes a variable capacitor C T On the other hand, a path 23 branches out on the opposite side of the high frequency power supply 22, with a first antenna coil 21a provided on a first path 23a and a second antenna coil 21b provided on a second path 23b. The other ends of the antenna coils 21a and 21b are connected to a ground electrode 24. Furthermore, the high frequency power supply 22 is connected to the ground electrode 24.

[0036] The antenna coil 21 is a coil that generates a magnetic field and an induced electric field in response to high-frequency power supplied from the high-frequency power source 22, and converts gas into plasma. The antenna coil 21 is composed of a spiral coil that is arranged to surround the space inside the reaction vessel 30, so as to convert the gas around the mold 100 contained in the reaction vessel 30 into plasma (see FIG. 4). The number of coil turns of the antenna coil 21 is one or more.

[0037] The high frequency power supply 22 is a power supply that supplies (applies) high frequency power to the antenna coil 21.

[0038] The path 23 is provided to electrically connect the antenna coil 21, the high frequency power supply 22, etc. to configure a circuit.

[0039] The ground electrode 24 is provided at a predetermined location on the path 23 so as to ground a part of the high-frequency circuit 20 .

[0040] Variable Condenser C T is a capacitor with variable impedance that is provided between the high frequency power supply 22 and the antenna coil 21. L In the middle of the path 23, the high frequency power supply 22 and the variable capacitor C T Variable capacitor C is installed on the path branched off from L The other end (opposite to the end connected to the high frequency power supply 22 etc.) is connected to the ground electrode 24 (24c) (see FIG. 4).

[0041] The reaction vessel 30 is a vessel configured to be capable of reducing pressure. Inside the reaction vessel, a mold accommodation section 31 in which the mold 100 is accommodated and a gas flow passage 32 formed around the mold accommodation section 31 are provided (see FIG. 2). The reaction vessel 30 of this embodiment has a cylindrical shape centered on the axis A (see FIGS. 1 and 2), and the inner diameter is configured to be smaller than the diameter of the antenna coil 21. That is, the antenna coil 21 is disposed outside the reaction vessel 30. With this configuration, the antenna coil 21 is not directly exposed to the plasma, and therefore it is possible to prevent the residue from adhering to the antenna coil during plasma generation, which causes the density of the generated plasma to become non-uniform.

[0042] Moreover, the antenna coil 21 of this embodiment is preferably disposed outside the reaction vessel 30 such that the center of the spiral overlaps with the axis A. That is, the axis of the antenna coil 21 is preferably disposed so as to be the same as the axis A of the reaction vessel 30. With this configuration, plasma of uniform density can be generated in the reaction vessel in both the circumferential direction and the axial direction.

[0043] Furthermore, in this embodiment, the cylindrical mold accommodation portion (processed object accommodation portion) 31 is disposed inside the space surrounded by the antenna coil 21. This configuration is preferable in that the entire surface can be uniformly plasma-treated even when a large-area mold (processed object) is used, and is particularly preferable when the mold 100 is cylindrical in shape, since the entire circumference can be simultaneously and uniformly plasma-treated over the entire length of the mold.

[0044] In addition, it is preferable to align the central axis of the mold accommodation portion (the portion for accommodating the processed object) 31 with the axis A of the reaction vessel 30. With this configuration, the volume of the gas flow passage around the mold 100 becomes uniform in the circumferential direction, and uniform plasma can be generated, so that the entire surface of the mold 100 can be uniformly plasma-treated.

[0045] The gas inlet 35 is a portion for introducing a reactive gas (e.g., SF6, O2) into the inside of the discharge tube 37, and is composed of, for example, a gas inlet hole 34 provided in the peripheral wall 30p of the reaction vessel 30 (see FIG. 2). A gas inlet pipe 36 is connected to the gas inlet 35 (see FIG. 1). A plurality of gas inlets 35 may be provided. The reaction vessel 30 of this embodiment has four gas inlets 35 (see FIG. 1, etc.). Since the reactive gas becomes plasma and is consumed, if there is only one gas inlet 35, there may be a difference in the amount of reactive gas supplied between a position close to the gas inlet 35 and a position far from the gas inlet 35. In this regard, by providing a plurality of gas inlets 35 that introduce reactive gas into the reaction vessel 30 from different positions as in this embodiment, it is possible to generate plasma of a more uniform density in the reaction vessel 30. When a plurality of gas introduction parts 35 are provided in this manner, it is more preferable to provide the plurality of gas introduction parts 35 at positions spaced apart in the axial A direction of the reaction vessel 30, and it is even more preferable to arrange the gas introduction parts 35 so that the reactive gas flows from at least two opposite directions toward the discharge tube 37. Even if the reactive gas flows in the radial direction of the reaction vessel near the gas introduction parts 35, it is possible to generate more uniform plasma by subsequently causing the gas to flow from two opposite directions along the axial direction of the reaction vessel toward the discharge tube 37. In this embodiment, the gas introduction parts 35 are arranged outside both ends of the mold accommodating part 31 along positions spaced apart in the axial A direction of the reaction vessel 30, so that more uniform plasma is generated (see FIG. 2, etc.).

[0046] Furthermore, in the case where the reaction vessel 30 has a mold accommodation section (a section for accommodating a workpiece) 31 inside as in this embodiment, by providing a plurality of gas inlet sections 35 for introducing reactive gas into the reaction vessel 30 from different positions, it is possible to generate plasma of a more uniform density in the reaction vessel 30, and to realize uniform plasma processing of the mold 100, which is the workpiece. When providing a plurality of gas inlet sections 35 in this manner, it is more preferable to provide the plurality of gas inlet sections 35 at positions spaced apart in the axial A direction of the reaction vessel 30, and it is even more preferable to arrange the gas inlet sections 35 so that the reactive gas flows from at least two opposite directions toward the discharge tube 37. In addition, when the plurality of gas inlet sections 35 are arranged outside both ends of the mold accommodation section (a section for accommodating a workpiece) 31 in the axial A direction of the reaction vessel 30, the amount of reactive gas supplied to the periphery of the mold 100 becomes more uniform, and uniform plasma processing can be realized.

[0047] In this embodiment, it is more preferable that an exhaust pipe (not shown) connecting the reaction vessel 30 to a vacuum pump capable of reducing pressure is positioned at an equal distance from the multiple gas introduction parts 35 described above, since this makes it difficult for reactants after plasma processing to remain in the reaction vessel 30.

[0048] <Antenna coil> In the past, for example, in the etching process for producing a cylindrical printing plate by generating a fine pattern of submicron order on the surface of a cylindrical printing plate, there was a need to process a larger object than the object in the past plasma processing (plasma processing of fine particles, etching process of semiconductor wafers), and to realize this, it is necessary to generate a higher density plasma in a larger capacity container. As a specific example, there is a case where deep etching is realized by applying inductively coupled plasma of the ICP (Inductively Coupled Plasma) method, which has a high plasma density and a high etching rate, to a wide roll mold.

[0049] Now, if plasma is to be generated in a large-capacity vessel, the inductive load will increase accordingly (i.e., the number of coil turns will increase), and the antenna coil will have a longer coil length and a longer coil wire length (see FIG. 3). However, in general, to generate plasma in the plasma generator 10, it is necessary to create a resonant state by satisfying the following resonance condition (see Equation 1 and FIG. 5).

number

[0050] In light of formula 1, if the coil length of the antenna coil 21 is increased, the inductance L increases, and it becomes difficult to adopt a capacitor with a capacitance C that satisfies formula 1. In other words, the number of turns of the coil (coil length) cannot be infinitely long because it is necessary to satisfy the resonance condition. This means that there is a limit due to the capacitance value of the capacitor that can be used in the resonance circuit (LC circuit). Specifically, since the capacitance of the capacitor that can be realized is about 10 pF or more, there is a limit to the magnitude of the inductance L that satisfies the above. In this way, there is a limit to the magnitude of the inductance L, in other words, the length of the antenna coil 21, due to the resonance condition and the capacitance value of the capacitor that can be used. In addition, there is a limit to the length of the antenna coil 21 due to the nature of the impedance of the coil length with respect to the wavelength λ of the high-frequency power. This can be explained as follows. That is, if the coil length of the antenna coil 21 is S and the wavelength of the high-frequency power is λ, [Number 2] S<λ / 4 In this case, an inductive input impedance is obtained (see Figure 6(A)). [Number 3] S=λ / 4 (see Fig. 6(B)), or [Number 4] S>λ / 4 In this case (see FIG. 6(C)), no power is applied or the ICP state is not maintained due to a capacitive state. In short, when the coil length S of the antenna coil is equal to or greater than 1 / 4 wavelength of the frequency of the power applied to the antenna coil (for example, about 3.8 m when 13.56 MHz power is applied to a copper pipe covered with Teflon (registered trademark)), a part of the coil has a potential difference of 0 V, and no plasma is generated. In addition, when the number of turns of the antenna coil is increased or the coil wire length is lengthened, the inductance L of the antenna coil increases, and the capacitance that satisfies the resonance condition decreases, and in some cases, it becomes a small value that cannot be handled by a commercially available (generally usable) capacitor, and deviates from a realistic value. Specifically, for example, when the frequency of the high frequency power is 13.56 MHz as described above, the wavelength λ=22 m, so that the range of the coil wire length S, 0 to λ / 4, is 0 to 5.5 m. Furthermore, it is preferable to set the coil length in the range of 0 to 3.8 m, which is calculated by multiplying the 0 to λ / 4 value by the shortening factor, where the shortening factor is a speed coefficient expressed as the ratio between the speed at which radio waves travel in the atmosphere or vacuum and the speed at which radio waves travel in a conductor covered with an insulator or the like.

[0051] In the plasma generating device 10 of this embodiment, the antenna coil 21 is divided into two antenna coils 21a and 21b, and the coil wire length of each of the antenna coils 21a and 21b is maintained within 1 / 4 wavelength λ of the high frequency power source, thereby reducing the inductance of the entire antenna coil (see FIG. 4). By dividing the antenna coil in this way, it is possible to reduce the inductance L of each coil while increasing the coil length of the entire antenna coil, and to select a capacitor that satisfies the resonance condition to generate plasma. It is also possible to maintain the frequency of the high frequency power supplied (applied) to the antenna coil in a high band.

[0052] Therefore, in order to meet the demand for deep etching by applying inductively coupled plasma (ICP) with high plasma density and high etching rate to the wide roll mold 100, it is possible to generate high-density plasma in a larger capacity reaction vessel 30.

[0053] These two divided antenna coils 21a and 21b are provided on different paths (indicated by symbols 23a and 23b in FIG. 4) (see FIG. 4). Each of these multiple paths 23a and 23b is connected in parallel to the high-frequency power source 22. High-frequency power in the same frequency band is supplied (applied) to the antenna coils 21a and 21b provided on the paths 23a and 23b from the high-frequency power source 22 via the paths 23a and 23b (see FIG. 4). In this way, by connecting multiple antenna coils 21 in parallel to one high-frequency power source 22, interference between the coils can be ignored.

[0054] That is, when a plurality of coils are used to generate plasma, each of the plurality of coils may be connected to a separate high-frequency power source (a plurality of high-frequency power sources may be used). However, when a high-frequency power source and a coil are connected one-to-one (a plurality of high-frequency power sources are used), depending on the arrangement of the inductive load, the fluctuating magnetic fields generated in the plurality of inductive loads and the induced electric fields generated by the fluctuating magnetic fields may interfere with each other (the coupling coefficient of the inductive load is large), and plasma may not be generated from the inductive load. In particular, when each of the plurality of coils is arranged so as to surround the periphery of the reaction vessel, the magnetic flux inside the spiral coil, which has a relatively high density, affects the magnetic flux of another adjacent coil. Therefore, the magnetic flux generated by one adjacent coil affects the magnetic flux of the other coil, and the degree of interference between the coils becomes large (the coupling coefficient K becomes large), and plasma may not be generated from the inductive load. Note that the coupling coefficient K is a dimensionless number indicating the degree of coupling between the primary winding and the secondary winding, and is low when the coils are arranged horizontally, and is high when they are arranged vertically as in this embodiment. In addition, the magnetic flux density decreases as the distance increases, and therefore the coupling coefficient K also decreases. The maximum value of the coupling coefficient K is 1. The coupling coefficient K increases when the coils are arranged vertically and close to each other, because the magnetic flux interference increases. In this way, when the degree of interference between adjacent coils is large, for example, it is possible to take measures to vary the high-frequency current supplied to one of the antenna coils, but it is often difficult to suppress the influence of the magnetic flux between the adjacent coils by varying the high-frequency current in a high frequency band such as 13.56 MHz. In addition, when the high-frequency current supplied to one of the antenna coils is varied, the interference of the fluctuating magnetic field and induced electric field generated between the coils may vary the high-frequency current conducting the high-frequency circuit, which may result in deterioration of the other high-frequency power supply device. In view of this, according to the plasma generating device 10 of this embodiment in which multiple antenna coils 21 are connected in parallel to one high-frequency power supply 22, the interference between the coils can be ignored.

[0055] One end of the antenna coil 21a is grounded at a ground electrode 24a, and one end of the antenna coil 21b is grounded at a ground electrode 24b (see FIG. 4). Although not particularly shown, the paths 23a and 23b may be joined midway and grounded at a single ground electrode.

[0056] [Second embodiment] A second embodiment of the plasma generating device 10 will be described (see FIG. 7).

[0057] The plasma generator 10 of this embodiment includes, as the antenna coil 21, four divided antenna coils 21a to 21d (see FIG. 7). The inductances of the antenna coils 21a to 21d are L1, L2, L3, and L4, respectively. The mutual inductance between the antenna coil 21a and the antenna coil 21b is M1, the mutual inductance between the antenna coil 21b and the antenna coil 21c is M2, and the mutual inductance between the antenna coil 21c and the antenna coil 21d is M3 (see FIG. 7).

[0058] These antenna coils 21a to 21d are provided on the multiple paths 23a to 23d, respectively, and are arranged in parallel (see FIG. 7). There is one high-frequency power source 22, as in the above embodiment, and high-frequency power in the same frequency band is supplied (applied) from the high-frequency power source 22 to the antenna coils 21a to 21d provided on the paths 23a to 23d, respectively.

[0059] An adjustment coil Ls may be provided in at least one of the paths 23a to 23d at a position opposite to the high frequency power source 22 as viewed from the antenna coils 21a to 21d. In the plasma generating device 10 of this embodiment, variable inductance adjustment coils Ls1, Ls2, Ls3, and Ls4 are provided in each of the paths 23a to 23d (see FIG. 7). As described above, the number of coil turns of the antenna coil 21 is determined according to the volume of plasma to be generated. If the number of coil turns is too large, the electrostatic capacitance C that satisfies the resonance condition becomes small, and in some cases, it may not be possible to use a commercially available capacitor that can be used generally. Therefore, there is a restriction on the number of coil turns (length) (see Equation 1). Here, based on the above-mentioned condition of the number of coil turns (length), the length of the antenna coils 21a to 21d is determined, and the range of the inductances L1 to L4 of the respective antenna coils is determined. However, by providing a plurality of antenna coils 21, the length of each of the antenna coils 21a to 21d becomes relatively shorter than when there is only one antenna coil, and this may result in a smaller inductance. T In some cases, it may be difficult to adjust the high-frequency circuit to satisfy a predetermined resonance condition by simply varying the capacitance of the high-frequency circuit 20. In this regard, according to the plasma generator 10 equipped with the adjustment coils Ls1, Ls2, Ls3, and Ls4, by adjusting the adjustment coils Ls so as to vary the combined inductance in the high-frequency circuit 20, it becomes possible to use generally available capacitors (i.e., to generate a desired plasma). In addition, the adjustment coils Ls1, Ls2, Ls3, and Ls4 also function as a so-called distributor that can adjust the amount (distribution amount) of high-frequency current flowing through each of the multiple paths 23a to 23d.

[0060] Further, the current distribution capacitors C1, C2, C3, and C4 having a predetermined impedance are provided in each of the multiple paths 23a to 23d of the plasma generating device 10 (see FIG. 7). In this embodiment, these current distribution capacitors C1, C2, C3, and C4 are arranged on the opposite side of the antenna coils 21a, 21b, 21c, and 21d as seen from the above-mentioned adjustment coils Ls1, Ls2, Ls3, and Ls4 (see FIG. 7). Even if the adjustment cannot be made within the appropriate range despite using a commercially available or manufactured variable inductance coil as the above-mentioned adjustment coils Ls1, Ls2, Ls3, and Ls4, it is possible to adjust the amount (distribution amount) of high-frequency current flowing through each of the multiple paths 23a to 23d by using these current distribution capacitors C1, C2, C3, and C4. In this way, at least one of these current distribution capacitors C1, C2, C3, and C4 that function as a so-called distributor may be a variable capacitor whose impedance is variable.

[0061] The plasma generating device 10 of this embodiment further includes a variable capacitor C T , variable capacitor C L , and has a common impedance Z (see Figure 7). T is a variable impedance capacitor provided between the high frequency power supply 22 and the multiple paths 23a, 23b, 23c, and 23d (the antenna coils 21a, 21b, 21c, and 21d provided thereon). T A variable impedance capacitor is installed on the path branched off from the L The other end (opposite to the end connected to the high frequency power supply 22 etc.) is connected to the ground electrode 24 (24c) (see FIG. 7).

[0062] The common impedance Z exists between the current distribution capacitors C1, C2, C3, C4 and the ground electrode 24. In the plasma generation device 10 of the present embodiment, this common impedance Z is provided midway along a single path where the paths 23a to 23d join together (see FIG. 7).

[0063] [Third embodiment] In the plasma generator 10 of the first embodiment or the second embodiment described above, it is also preferable to perform predetermined control using a control device. Hereinafter, a plasma generator 10 equipped with a control device will be described as a third embodiment (see FIG. 8, etc.).

[0064] The plasma generation device 10 of this embodiment includes a control device 40 including a processor (computer) 41 and a memory 42 (see FIG. 8). The memory 42 stores a program (software) for executing a predetermined process and a reference data table DT.

[0065] The control device 40 controls the variable capacitor C T , variable capacitor C L Based on the program, the processor 41 adjusts the capacitance of the variable capacitor C T , variable capacitor C L The actuator 50 is operated to adjust the capacitance of the variable capacitor C T , C L The variable capacitor may be provided in common to all the variable capacitors, or may be provided for each variable capacitor.

[0066] The reference data table DT describes data to be referred to by the processor 41 when processing a predetermined procedure. The reference data table DT in this embodiment includes the output of the high frequency power source 22, the variable capacitor C corresponding to the output, T ,C L The initial and target values ​​of the capacitance of the variable capacitor C T,C L This includes information about the degree of fluctuation when adjusting the capacitance (see FIG. 8). The information about the degree of fluctuation includes information about how to increase the value from the initial value to the target value when adjusting the capacitance (degree of fluctuation), which is obtained based on, for example, responsiveness to a command and transient characteristics.

[0067] Variable capacitor C by the control device 40 T ,C L The capacitance adjustment process will be described below with reference to an example (see FIG. 9).

[0068] After the adjustment process is started, the control device 40 receives input of the process conditions (step SP1). The process conditions include, for example, the type of gas used, the power value of the high frequency power source 22, the variable capacitor C T ,C L There are various conditions such as the initial capacitance value (initial percentage) and fluctuation type, pressure at steady state, and plasma generation time at steady state (see Figure 8).

[0069] The above "Variable Type" is a variable capacitor C T ,C L The process procedures for adjusting the capacitance of the are classified into patterns, and are set and linked based on the process conditions. The control device can refer to the "variation type" linked to the process conditions at the time and output an instruction signal to perform the optimal process procedure (see Figure 8).

[0070] The control device 40 that has received the input of the processing conditions controls the variable capacitor C T ,C L The capacitance of is set based on the "capacitance initial value" in the above processing conditions (step SP2).

[0071] Next, the control device 40 controls the variable capacitor C T ,C L The capacitance of is changed according to the "variation type" in the above processing conditions (step SP3).

[0072] Thereafter, the control device 40 checks whether the plasma generation state (in other words, the state indicating whether or not the predetermined condition is matched) is appropriate (step SP4). Whether the plasma generation state (matching state) is appropriate can be automatically determined based on, for example, the reflected power value and / or the presence or absence of plasma emission. The reflected power value can be measured, for example, by an SWR meter (not shown) that converts the electromotive force of a detection circuit generated by the current of the power supply line (part of the path 23) that supplies power to the antenna coil 21 into power and displays it. The SWR meter can measure both the traveling (incident) wave: the high-frequency power from the high-frequency power source 22 toward the antenna coil 21, and the reflected wave (reflection is power) generated with the generation of plasma. Note that, although the "automatic determination" has been described in this embodiment, the reflected power value and / or the degree of plasma emission (illuminance, emission spectroscopy) may be presented, and the user may make the final decision on whether or not it is appropriate.

[0073] If it is determined in step SP4 that the plasma generation conditions are appropriate (Yes in step SP4), the series of adjustment processes ends. On the other hand, if it is determined that the plasma generation conditions are not appropriate (No in step SP4), the process returns to step SP1 and the above process procedure is repeated.

[0074] As described above, the plasma generation device 10 of this embodiment has the reference data table DT, and thus can stably generate plasma even under conditions in which the plasma generation state (matching state) differs greatly.

[0075] [Fourth embodiment] A fourth embodiment of the plasma generating device 10 will be described (see FIG. 11).

[0076] The plasma generator 10 of this embodiment includes an antenna coil 21 divided into two antenna coils 21a and 21b (see FIG. 11). The inductances of the antenna coils 21a and 21b are L1 and L2, respectively.

[0077] These antenna coils 21a, 21b are provided on each of the multiple paths 23a, 23b, and are arranged in parallel (see FIG. 11). There is only one high-frequency power source 22, as in the other embodiments, and high-frequency power in the same frequency band is supplied (applied) from the high-frequency power source 22 to the antenna coils 21a to 21d provided on each of the paths 23a, 23b.

[0078] In the present embodiment, the plurality of paths 23a, 23b are provided with adjustment coils Ls1, Ls2 at positions opposite to the high frequency power source 22 as viewed from the antenna coils 21a, 21b. In addition, the plurality of paths 23a, 23b are provided with current distribution capacitors C1, C2 at the opposite side of the antenna coils 21a, 21b as viewed from the adjustment coils Ls1, Ls2. Here, the adjustment coils Ls1, Ls2 may have a predetermined inductance or may have a variable inductance. In addition, the current distribution capacitors C1, C2 may have a predetermined impedance or may have a variable impedance.

[0079] Further, in each of the multiple paths 23a, 23b of this embodiment, second current distribution capacitors C5, C6 having a predetermined impedance are arranged in parallel on the same side as the adjustment coils Ls1, Ls2 and the current distribution capacitors C1, C2 when viewed from the antenna coils 21a, 21b. In particular, it is preferable that the second current distribution capacitors C5, C6 are capacitors with variable impedance. As described above, when multiple antenna coils 21 are provided, it may be necessary to adjust the amount (distribution amount) of high-frequency current flowing through each of the multiple paths 23a, 23b. By providing the second current distribution capacitors C5, C6, the adjustment response of the amount of high-frequency current flowing through the multiple paths 23a, 23b can be improved compared to the case where only the adjustment coils Ls1, Ls2 and the current distribution capacitors C1, C2 are provided, which is preferable.

[0080] As a modification of the high-frequency circuit 20 of the plasma generator 10 shown in Fig. 7, a circuit diagram in which the number of divisions of the antenna coil 21 is simplified from 4 to 2 is shown in Fig. 10. In the high-frequency circuit 20 shown in Fig. 10, when the inductances of the antenna coils L1 and L2 are equal, the inductances of the adjustment coils Ls1 and Ls2 are equal, and the impedances of the current distribution capacitors C1 and C2 are equal, the state of change over time of the high-frequency currents I(L1) and I(L2) flowing through the paths 23a and 23b, respectively, is shown in Fig. 12(a). Also, the state of change over time of the high-frequency currents I(L1) and I(L2) when only the impedance of the capacitor C2 is changed under the above conditions is shown in Fig. 12(b).

[0081] On the other hand, in the configuration of Fig. 11 in which second current distribution capacitors C5 and C6 are provided, when the inductances of antenna coils L1 and L2 are equal, the inductances of adjustment coils Ls1 and Ls2 are equal, the impedances of current distribution capacitors C1 and C2 are equal, and the impedances of second current distribution capacitors C3 and C4 are equal, Fig. 13(a) shows the time-dependent changes in high-frequency currents I(L1) and I(L2) flowing through paths 23a and 23b, respectively. Fig. 13(b) also shows the time-dependent changes in high-frequency currents I(L1) and I(L2) when only the impedance of capacitor C2 is changed under the above conditions.

[0082] From these, it can be seen that it is possible to improve the adjustment response by arranging the second current distribution capacitors C5, C6 in parallel with the adjustment coils Ls1, Ls2 and the current distribution capacitors C1, C2 in the rear stage of the antenna coils 21a, 21b. Incidentally, a capacitor with variable impedance may be used as at least one of the multiple capacitors C5, C6 arranged in parallel as described above.

[0083] [Fifth embodiment] A fifth embodiment, which is an example of the case where the plasma generating device 10 is used as a plasma processing device, will be described (see FIG. 15).

[0084] FIG. 15 shows a plasma processing apparatus using the plasma generating device 10 shown in FIG. 4. In the plasma processing apparatus of FIG. 15, a high-frequency (e.g., 13.56 MHz) circuit 20 for generating plasma is connected to the antenna coil 21. Furthermore, a bias high-frequency (e.g., a frequency lower than the frequency for generating plasma) circuit 25 for attracting ions in the plasma is connected to the roll mold 100, which is the object to be processed and accommodated in a reaction vessel (not shown), in addition to the ground electrode 24 (24e). By connecting the high-frequency circuit 25 to the mold 100, it becomes possible to adjust the potential of the mold 100 surface, and it becomes possible to adjust the acceleration potential of the plasma generated by the antenna coils (21a, 21b). This configuration makes it possible to adjust the surface processing speed of the object to be processed by the plasma processing apparatus and the processing shape. In addition, a DC circuit may be connected as a bias circuit.

[0085] Figure 14 shows a plasma processing apparatus that utilizes a plasma generating device (Figure 3) using a conventional technology in which the antenna coil is not divided. As in Figure 15, a ground electrode 24 and a high-frequency power supply 25 are connected to a mold 100 for a roll-shaped substrate, which is the object to be processed and is contained in a reaction vessel (not shown). Even in this case, in a plasma processing apparatus (FIG. 14) using an apparatus (FIG. 3) in which the antenna coil is not divided as described above, the inductance L increases, making it difficult to employ a capacitor with a capacitance C that satisfies the formula 1. This places a limit on the size of the mold 100, which is the workpiece that can be processed, making it difficult to process a mold 100 with a large area.

[0086] The above-described embodiment is an example of a preferred embodiment of the present disclosure, but is not limited thereto and can be modified in various ways without departing from the scope of the present disclosure. For example, in the above-described embodiment, the antenna coil is divided into two and four, but based on the same concept, it goes without saying that the number of divisions of the antenna coil 21 is good as long as it is divided into at least two or more.

[0087] A part or all of the above-described embodiment may be described as follows: However, the present invention is not limited to the following supplementary notes. [Appendix 1] A high frequency circuit including an inductive load and a high frequency power supply that supplies high frequency power to the inductive load; a reaction vessel configured to be decompressible and in which plasma is generated by applying high frequency power to the inductive load; the inductive load is composed of a spiral antenna coil arranged to surround the reaction vessel, The antenna coil is divided into at least two or more parts, A plasma generation device, wherein the high-frequency circuit has a plurality of paths each provided with the antenna coil which is divided into at least two or more parts.

[0088] [Appendix 2] The plasma generating device described in Appendix 1, characterized in that the reaction vessel is cylindrical and has the same axis as the antenna coil, the inner diameter of the reaction vessel is smaller than the diameter of the antenna coil, and the antenna coil is positioned outside the reaction vessel.

[0089] [Appendix 3] 3. The plasma generating device according to claim 1, wherein the reaction vessel is provided with a plurality of gas inlets for introducing reaction gases into the reaction vessel from different positions.

[0090] [Appendix 4] each of the plurality of paths is connected in parallel to the high frequency power source; 3. The plasma generation device according to claim 1, wherein the high-frequency circuit is configured so that the high-frequency power source supplies high-frequency power of the same frequency band to the multiple paths.

[0091] [Appendix 5] The plasma generation device according to claim 1 or 2, wherein the high-frequency circuit includes a ground electrode to which the multiple paths are commonly connected on the opposite side to the high-frequency power supply.

[0092] [Appendix 6] 4. The plasma generation device according to claim 1, wherein any one of the plurality of paths has an adjustment coil on the opposite side of the high frequency power supply with respect to the antenna coil.

[0093] [Appendix 7] 7. The plasma generation device according to claim 6, wherein the adjustment coil is a coil having variable inductance.

[0094] [Appendix 8] 8. The plasma generation device according to claim 6, wherein each of the plurality of paths has a capacitor having a predetermined impedance on the opposite side of the antenna coil with respect to the adjustment coil.

[0095] [Appendix 9] 9. The plasma generation device according to claim 8, wherein at least one of the plurality of capacitors is a capacitor having variable impedance.

[0096] [Appendix 10] 8. The plasma generation device according to claim 7, wherein each of the plurality of paths has a plurality of capacitors, each having a predetermined impedance, arranged in parallel on the same side as the adjustment coil when viewed from the antenna coil.

[0097] [Appendix 11] 11. The plasma generation device according to claim 10, wherein at least one of the plurality of capacitors is a capacitor having variable impedance.

[0098] [Appendix 12] 12. The plasma generation device according to any one of claims 1 to 11, wherein each of the antenna coils has a number of turns greater than one.

[0099] [Appendix 13] A control device having a processor and a memory in which software for executing a predetermined process is stored, and controlling the high frequency circuit; The high frequency circuit includes: a first capacitor having a variable impedance that is provided between the high frequency power source and the plurality of paths; a second capacitor having variable impedance, the second capacitor being provided on a path that branches off from between the high frequency power supply and the first capacitor and has the other end connected to a ground electrode; having the memory stores a program for adjusting the capacitance of the first capacitor and the second capacitor; The memory further stores a reference data table including an output of the high frequency power supply and initial values ​​and target values ​​of capacitances of the first capacitor and the second capacitor corresponding to the output, 9. The plasma generation device according to any one of claims 1 to 8, wherein the control device adjusts the capacitance of the first capacitor and the second capacitor based on the program and the reference data table.

[0100] [Appendix 14] The memory further stores information regarding a degree of fluctuation when adjusting the capacitance of the first capacitor and the second capacitor, The plasma generation device of claim 13, wherein the controller further adjusts a capacitance of the first capacitor and the second capacitor based on the degree of fluctuation.

[0101] [Appendix 15] A high-frequency circuit having an inductive load and a high-frequency power source that supplies high-frequency power to the inductive load, and a reaction vessel configured to be decompressible and in which plasma is generated by applying high-frequency power to the inductive load, the inductive load is composed of a spiral antenna coil arranged to surround the reaction vessel, The antenna coil is divided into at least two or more parts, The reaction vessel includes a workpiece accommodation portion for accommodating a workpiece, The workpiece accommodation section is disposed inside a space surrounded by the antenna coil.

[0102] [Appendix 16] 16. The plasma processing apparatus of claim 15, wherein the reaction vessel further comprises a plurality of gas inlets that introduce reaction gas into the reaction vessel from different positions.

[0103] [Appendix 17] A high-frequency circuit having an inductive load and a high-frequency power source that supplies high-frequency power to the inductive load, and a reaction vessel configured to be decompressible and in which plasma is generated by applying high-frequency power to the inductive load, the inductive load is composed of a spiral antenna coil arranged to surround the reaction vessel, The antenna coil is divided into at least two or more parts, The reaction vessel includes a workpiece accommodation portion for accommodating a workpiece, The plasma etching apparatus for seamless roller molds, wherein the workpiece accommodation section is disposed inside a space surrounded by the antenna coil.

[0104] [Appendix 18] 18. The plasma etching apparatus for seamless roller molds of claim 17, wherein the reaction vessel further comprises a plurality of gas inlets for introducing reaction gases into the reaction vessel from different positions. [Industrial Applicability]

[0105] The plasma device according to the present disclosure is suitable for use in ICP type dry etching and the like. [Explanation of symbols]

[0106] 10...Plasma generating device (plasma processing device, plasma etching device for seamless roller mold) 20...High frequency circuit 21...Antenna coil (inductive load) 22…High frequency power supply 23...Route 24...Grounding electrode 25...High frequency circuit 30…Reaction vessel 31...Mold housing portion (workpiece housing portion) 32...Gas passage 34...Gas inlet 35…Gas inlet 36...Gas inlet pipe 37...discharge tube 40...Control device 41…Processor 42…Memory 50…Actuator 100…Mold (workpiece) A…the central axis (axis) of the reaction vessel and / or antenna coil C(C1~C4)…Current distribution capacitors C T …Variable capacitor (first capacitor) C L …Variable capacitor (second capacitor) DT...Reference Data Table Ls (Ls1, Ls2, Ls3, Ls4)…Adjustment coil

Claims

1. A high frequency circuit including an inductive load and a high frequency power supply that supplies high frequency power to the inductive load; a reaction vessel configured to be decompressible and in which plasma is generated by applying high frequency power to the inductive load; the inductive load is composed of a spiral antenna coil arranged to surround the reaction vessel, The antenna coil is divided into at least two or more parts, the high frequency circuit has a plurality of paths each provided with the antenna coil divided into at least two or more; any one of the plurality of paths has an adjustment coil on the opposite side of the high frequency power source with respect to the antenna coil; A plasma generation device, wherein each of the plurality of paths has a plurality of capacitors, each having a predetermined impedance, arranged in parallel on the same side as the adjustment coil when viewed from the antenna coil.

2. 2. The plasma generating device according to claim 1, wherein the reaction vessel is cylindrical and has the same axis as the antenna coil, the inner diameter of the reaction vessel is smaller than the diameter of the antenna coil, and the antenna coil is disposed outside the reaction vessel.

3. 3. The plasma generating device according to claim 1, wherein the reaction vessel is provided with a plurality of gas inlets for introducing reactive gases into the reaction vessel from different positions.

4. each of the plurality of paths is connected in parallel to the high frequency power source; 3. The plasma generation device according to claim 1, wherein the high frequency circuit is configured so that the high frequency power source supplies high frequency power in the same frequency band to the plurality of paths.

5. 3. The plasma generation device according to claim 1, wherein the high-frequency circuit includes a ground electrode to which the ends of the multiple paths opposite to the high-frequency power supply are commonly connected.

6. The plasma generation device according to claim 1 , wherein the adjustment coil is a coil having a variable inductance.

7. The plasma generation device according to claim 1 , wherein each of the plurality of paths has a capacitor having a predetermined impedance on an opposite side of the antenna coil with respect to the adjustment coil.

8. The plasma generation device according to claim 7 , wherein at least one of the plurality of capacitors is a capacitor having a variable impedance.

9. The plasma generation device according to claim 1 , wherein at least one of the plurality of capacitors is a capacitor having a variable impedance.

10. The plasma generating device according to claim 1 or 2, wherein each of the antenna coils has a number of turns greater than one.

11. A control device having a processor and a memory in which software for executing a predetermined process is stored, and controlling the high frequency circuit; The high frequency circuit includes: a first capacitor having a variable impedance that is provided between the high frequency power source and the plurality of paths; a second capacitor having a variable impedance, the second capacitor being provided on a path that branches off from between the high frequency power supply and the first capacitor and has the other end connected to a ground electrode; having The memory stores a program for adjusting the capacitance of the first capacitor and the second capacitor, The memory further stores a reference data table including an output of the high frequency power source and initial values ​​and target values ​​of capacitances of the first capacitor and the second capacitor corresponding to the output, 3. The plasma generation device according to claim 1, wherein the control device adjusts capacitances of the first capacitor and the second capacitor based on the program and the reference data table.

12. The memory further stores information regarding a degree of fluctuation when adjusting the capacitance of the first capacitor and the second capacitor, The plasma generation device according to claim 11 , wherein the control device further adjusts capacitances of the first capacitor and the second capacitor based on the degree of fluctuation.

13. A high-frequency circuit having an inductive load and a high-frequency power source that supplies high-frequency power to the inductive load, and a reaction vessel configured to be decompressible and in which plasma is generated by applying high-frequency power to the inductive load, the inductive load is composed of a spiral antenna coil arranged to surround the reaction vessel, The antenna coil is divided into at least two or more parts, The reaction vessel includes a workpiece accommodation portion for accommodating a workpiece, The workpiece accommodation portion is disposed inside a space surrounded by the antenna coil, the high frequency circuit has a plurality of paths each provided with the antenna coil divided into at least two or more; any one of the plurality of paths has an adjustment coil on the opposite side of the high frequency power source with respect to the antenna coil; A plasma processing apparatus, wherein each of the plurality of paths has a plurality of capacitors, each having a predetermined impedance, arranged in parallel on the same side as the adjustment coil when viewed from the antenna coil.

14. The plasma processing apparatus of claim 13 , wherein the reaction vessel further comprises a plurality of gas inlets for introducing a reaction gas into the reaction vessel from different positions.

15. A high-frequency circuit having an inductive load and a high-frequency power source that supplies high-frequency power to the inductive load, and a reaction vessel configured to be decompressible and in which plasma is generated by applying high-frequency power to the inductive load, the inductive load is composed of a spiral antenna coil arranged to surround the reaction vessel, The antenna coil is divided into at least two or more parts, The reaction vessel includes a workpiece accommodation portion for accommodating a workpiece, The workpiece accommodation portion is disposed inside a space surrounded by the antenna coil, the high frequency circuit has a plurality of paths each provided with the antenna coil divided into at least two or more; any one of the plurality of paths has an adjustment coil on the opposite side of the high frequency power source with respect to the antenna coil; A plasma etching apparatus for a seamless roller mold, wherein each of the plurality of paths has a plurality of capacitors, each having a predetermined impedance, arranged in parallel on the same side as the adjustment coil when viewed from the antenna coil.

16. 16. The plasma etching apparatus for seamless roller molds of claim 15, wherein the reaction vessel further comprises a plurality of gas inlets for introducing reactive gases into the reaction vessel from different positions.

Images