Light-transmitting conductive sheet, touch sensor, light control element, photoelectric conversion element, heat control member, antenna, electromagnetic wave shielding member, and image display device

Abstract

To provide an optically transparent electroconductive sheet having an optically transparent electroconductive layer in which cracks are suppressed while having a low resistivity, a touch sensor comprising the same, a light control element, a photoelectric conversion element, a heat ray control member, an antenna, an electromagnetic wave shield member, and an image display device.SOLUTION: An optically transparent electroconductive sheet 1 comprises a base sheet 2 and an optically transparent electroconductive layer 3 in order toward one side in a thickness direction. The optically transparent electroconductive layer 3 includes, in order toward the one side in the thickness direction, a first region 6 and a second region 7. A main region of the first region 6 is amorphous. A main region of the second region 7 is crystalline. The second region 7 is thicker than the region of the first region 6. A thickness of the optically transparent electroconductive layer 3 is greater than 30 nm.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a light-transmitting conductive sheet, a touch sensor, a light control element, a photoelectric conversion element, a heat ray control member, an antenna, an electromagnetic wave shielding member, and an image display device. [Background technology]

[0002] 2. Description of the Related Art Transparent conductive films including a base film and a transparent conductive layer made of ITO are conventionally known.

[0003] For example, a transparent conductive film has been proposed that includes an amorphous ITO film and a crystalline ITO film disposed thereon (see, for example, Patent Document 1 below). In the transparent conductive film described in Patent Document 1, the amorphous ITO film (lower layer) is thicker than the crystalline ITO film (upper layer). This allows the transparent conductive film described in Patent Document 1 to have excellent durability while improving etching properties. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 8-174746 Summary of the Invention [Problem to be solved by the invention]

[0005] Therefore, a transparent conductive film is required to have a low specific resistance, but the transparent conductive film described in Patent Document 1 has the disadvantage that it cannot satisfy the above requirement.

[0006] Furthermore, the transparent conductive film is required to suppress cracks.

[0007] The present invention provides an optically transparent conductive sheet having an optically transparent conductive layer that has low resistivity while suppressing cracking, and a touch sensor, a light control element, a photoelectric conversion element, a heat ray control member, an antenna, an electromagnetic wave shielding member, and an image display device that include the optically transparent conductive sheet. [Means for solving the problem]

[0008] The present invention (1) includes a light-transmitting conductive sheet comprising a resin layer and a light-transmitting conductive layer, in that order toward one side in a thickness direction, the light-transmitting conductive layer including a first region and a second region, in that order toward the one side in the thickness direction, a main region of the first region being amorphous and the second region being crystalline, the second region being thicker than the first region, and the thickness of the light-transmitting conductive layer exceeding 30 nm.

[0009] The present invention (2) includes the light-transmitting conductive sheet according to (1), in which the ratio of the thickness of the second region to the thickness of the light-transmitting conductive layer is 0.73 or more.

[0010] The present invention (3) includes the light-transmitting conductive sheet according to claim (1) or (2), in which the material of the light-transmitting conductive layer is a composite oxide containing indium and tin.

[0011] The present invention (4) includes a touch sensor comprising the light-transmitting conductive sheet according to any one of (1) to (3).

[0012] The present invention (5) includes a light-adjusting element comprising the light-transmitting conductive sheet according to any one of (1) to (3).

[0013] The present invention (6) includes a photoelectric conversion element comprising the light-transmitting conductive sheet according to any one of (1) to (3).

[0014] The present invention (7) includes a heat ray control member comprising the light-transmitting conductive sheet according to any one of (1) to (3).

[0015] The present invention (8) includes an antenna comprising the light-transmitting conductive sheet according to any one of (1) to (3).

[0016] The present invention (9) includes an electromagnetic wave shielding member comprising the light-transmitting conductive sheet according to any one of (1) to (3).

[0017] The present invention (10) includes an image display device comprising the light-transmitting conductive sheet according to any one of (1) to (3). Effect of the Invention

[0018] The light-transmitting conductive layer of the light-transmitting conductive sheet of the present invention has low resistivity and is suppressed from cracking.

[0019] The touch sensor, light control element, photoelectric conversion element, heat ray control member, antenna, electromagnetic wave shielding member, and image display device of the present invention are provided with the above-mentioned light-transmitting conductive sheet, and therefore have excellent reliability. [Brief description of the drawings]

[0020] [Figure 1] FIG. 1 is a cross-sectional view of one embodiment of the light-transmitting conductive sheet of the present invention. [Diagram 2] FIG. 2 is a configuration diagram of a sputtering device. [Diagram 3] FIG. 3 is a cross-sectional view of a modified example of the light-transmitting conductive sheet shown in FIG. [Figure 4] FIG. 4 is an image-processed TEM photograph of Example 2. [Diagram 5] FIG. 5 is an image-processed TEM photograph of Example 3. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] (One embodiment of the light-transmitting conductive sheet) One embodiment of the light-transmitting conductive sheet of the present invention will be described with reference to FIG.

[0022] The light-transmitting conductive sheet 1 is a component included in touch sensors, light control elements, photoelectric conversion elements, heat ray control members, antennas, electromagnetic wave shielding members, image display devices, etc., which will be described later, and is an intermediate component for producing these. The light-transmitting conductive sheet 1 is a device that is distributed independently and can be used industrially.

[0023] The light-transmitting conductive sheet 1 has a thickness and has a flat plate shape extending in a plane direction perpendicular to the thickness direction. The light-transmitting conductive sheet 1 includes a base sheet 2 as an example of a resin layer and a light-transmitting conductive layer 3, which are arranged in this order toward one side in the thickness direction. Specifically, the light-transmitting conductive sheet 1 includes the base sheet 2 and the light-transmitting conductive layer 3 disposed on one surface of the base sheet 2 in the thickness direction. Preferably, the light-transmitting conductive sheet 1 includes only the base sheet 2 and the light-transmitting conductive layer 3.

[0024] (Base sheet) The base sheet 2 has a thickness and has a flat plate shape extending in the surface direction. The base sheet 2 forms the other surface in the thickness direction of the light-transmitting conductive sheet 1. The base sheet 2 has a film shape extending in the surface direction. The base sheet 2 is flexible. The base sheet 2 includes at least a base layer 4. Specifically, the base sheet 2 includes the base layer 4 and a hard coat layer 5 in this order toward one side in the thickness direction. In this embodiment, the number of base sheets 2 included in the light-transmitting conductive sheet 1 is one.

[0025] The base layer 4 has a film shape extending in the surface direction. The base layer 4 forms the other surface in the thickness direction of the base sheet 2. The material of the base layer 4 is not particularly limited, and examples thereof include polymers and glass. Preferably, a polymer is used. Examples of the polymer include olefin resins such as polyethylene, polypropylene, and cycloolefin polymer (COP), polyester resins such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate, (meth)acrylic resins (acrylic resins and / or methacrylic resins) such as polymethacrylate, and resins such as polycarbonate resins, polyethersulfone resins, polyarylate resins, melamine resins, polyamide resins, polyimide resins, cellulose resins, and polystyrene resins, and preferably polyester resins, and more preferably PET. The thickness of the base layer 4 is, for example, 10 μm or more, preferably 30 μm or more, and, for example, 300 μm or less, preferably 200 μm or less, more preferably 100 μm or less, and even more preferably 75 μm or less. 〓 The hard coat layer 5 is an anti-scratch layer for preventing the light-transmitting conductive layer 3 from being scratched. The hard coat layer 5 forms one surface in the thickness direction of the substrate sheet 2. The hard coat layer 5 is in contact with the entire one surface in the thickness direction of the substrate layer 4. The hard coat layer 5 may be a cured product of a hard coat composition (acrylic resin, urethane resin, etc.) described in JP-A-2016-179686. The thickness of the hard coat layer 5 is, for example, 0.1 μm or more, preferably 0.5 μm or more, and, for example, 10 μm or less, preferably 5 μm or less.

[0026] (Physical properties of substrate) The thickness of the base sheet 2 is, for example, 1 μm or more, preferably 10 μm or more, more preferably 15 μm or more, and even more preferably 30 μm or more, and for example, 310 μm or less, preferably 210 μm or less, more preferably 110 μm or less, and even more preferably 80 μm or less.

[0027] The total light transmittance (JIS K 7375-2008) of the base sheet 2 is, for example, 60% or more, preferably 80% or more, more preferably 85% or more, and for example, 100% or less.

[0028] (light-transparent conductive layer) The light-transmitting conductive layer 3 forms one surface in the thickness direction of the light-transmitting conductive sheet 1. The light-transmitting conductive layer 3 is supported by the base sheet 2 from the other side in the thickness direction. The light-transmitting conductive layer 3 is in contact with the entire one surface in the thickness direction of the base sheet 2. That is, the light-transmitting conductive layer 3 is in contact with one surface in the thickness direction of the base sheet 2. This light-transmitting conductive layer 3 includes a first region 6 and a second region 7 toward one side in the thickness direction. Therefore, in this light-transmitting conductive sheet 1, the base sheet 2, the first region 6, and the second region 7 are arranged in this order toward one side in the thickness direction. In this embodiment, the number of light-transmitting conductive layers 3 included in the light-transmitting conductive sheet 1 is one.

[0029] (1st area) In this embodiment, the first region 6 is the other side portion in the thickness direction of the light-transmitting conductive layer 3. The first region 6 includes the other surface of the light-transmitting conductive layer 3 in the thickness direction.

[0030] The first region 6 includes a region that is amorphous (non-crystalline) in cross-sectional view. Examples of the amorphous nature of the first region 6 include a state in which all regions in the first region 6 are amorphous in cross-sectional view, and a state in which the main region in the first region 6 is amorphous and the remaining small region is crystalline in cross-sectional view. The amorphous nature of the first region 6 is confirmed by observing a cross-sectional TEM image. Specifically, for example, as shown in FIG. 4, a black region is identified as the amorphous first region 6 in a cross-sectional TEM image. In addition, as described later, it is also possible to identify that the first region 6 is amorphous and / or that the main region is amorphous by observing the presence or absence of lattice fringes and the proportion of the region in which lattice fringes are confirmed by high-magnification cross-sectional TEM observation. Note that, in cross-sectional view, the area ratio of the main region in the first region 6 (area ratio of amorphous) is, for example, 0.6 or more, preferably 0.8 or more, more preferably 0.9 or more, and is, for example, 1 or less.

[0031] The thickness of the first region 6 is the thickness of the main region described above, and is set so that the ratio to the thickness of the second region 7 described below is within a desired range. The thickness of the first region 6 is, for example, 30 nm or less, preferably 25 nm or less, more preferably 20 nm or less, and even more preferably 15 nm or less, and for example, 1 nm or more, preferably 5 nm or more, and more preferably 10 nm or more.

[0032] A method for measuring the thickness of the first region 6 will be described in the Examples.

[0033] (Second area) In this embodiment, the second region 7 is a portion on one thickness direction side of the light-transmitting conductive layer 3. The second region 7 includes one thickness direction surface of the light-transmitting conductive layer 3. The second region 7 is continuous with one thickness direction side of the first region 6.

[0034] The second region 7 includes a crystalline region as a main region in a cross-sectional view, and specifically is crystalline (crystalline).

[0035] The second region 7 may contain a small amount of amorphous (non-crystalline). Specifically, the area ratio of the main region (area ratio of crystalline) in the second region 7 is, for example, 0.7 or more, preferably 0.8 or more, more preferably 0.9 or more, and is, for example, 1 or less.

[0036] The crystallinity of the second region 7 is confirmed by observing a cross-sectional TEM image. Specifically, for example, as shown in Fig. 4, a gray region is identified as the crystalline second region 7 by a cross-sectional TEM image. In addition, as described below, by observing the presence or absence of lattice fringes and the proportion of the region in which lattice fringes are confirmed by high-magnification cross-sectional TEM observation, it is also possible to identify that the second region 7 is crystalline and / or that the region is mainly crystalline.

[0037] The second region 7 is thicker than the first region 6 (the main region in the first region 6). On the other hand, if the second region 7 is thinner than or has the same thickness as the first region 6, the resistivity increases.

[0038] Specifically, the ratio of the thickness of the second region 7 to the thickness of the first region 6 is more than 1.0, preferably 1.3 or more, more preferably 2 or more, and even more preferably 4 or more. The ratio of the thickness of the second region 7 to the thickness of the light-transmitting conductive layer 3 is, for example, more than 0.50, preferably 0.56 or more, more preferably 0.70 or more, even more preferably 0.73 or more, and particularly preferably 0.80 or more. When the ratio of the thickness of the second region 7 to the thickness of the first region 6 and / or the ratio of the thickness of the second region 7 to the thickness of the light-transmitting conductive layer 3 is equal to or greater than the above-mentioned lower limit, low resistivity in the light-transmitting conductive layer 3 can be ensured.

[0039] The ratio of the thickness of the second region 7 to the thickness of the first region 6 is, for example, 1000 or less, preferably 100 or less, more preferably 50 or less, even more preferably 20 or less, particularly preferably 15 or less, and particularly preferably 10 or less. The ratio of the thickness of the second region 7 to the thickness of the permeable conductive layer 3 is, for example, less than 1.00, preferably 0.99 or less, more preferably 0.95 or less, and more preferably 0.90. If the ratio of the thickness of the second region 7 to the thickness of the first region 6 and / or the ratio of the thickness of the second region 7 to the thickness of the permeable conductive layer 3 is equal to or less than the above-mentioned upper limit, the amount of cracks generated in the permeable conductive layer 3 can be suppressed.

[0040] The thickness of the second region 7 is set so that the thickness ratio of the second region 7 is within the above range, specifically, for example, more than 25 nm, preferably 30 nm or more, more preferably 50 nm, further preferably 65 nm or more, particularly preferably 100 nm or more. The thickness of the second region 7 is, for example, less than 500 nm, preferably 300 nm or less, more preferably 200 nm or less.

[0041] A method for measuring the thickness of the second region 7 will be described in the Examples.

[0042] (Light-transmitting conductive layer material) Examples of materials for the light-transmitting conductive layer 3 include conductive oxides. Examples of conductive oxides include metal oxides containing at least one metal or metalloid selected from the group consisting of In, Sn, Zn, Ga, Sb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, and W. If necessary, the metal oxide may be doped with a metal atom or metalloid atom shown in the above group.

[0043] Specific examples of the conductive oxide include metal oxides such as indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium gallium oxide (IGO), indium tin oxide (ITO), and antimony tin oxide (ATO). A preferred conductive oxide is indium tin oxide (ITO), which contains both indium and tin, from the viewpoint of improving transparency and electrical conductivity. If the conductive oxide is ITO, the transparency and electrical conductivity are even more excellent. The concentration of indium oxide and the concentration of tin oxide in ITO are appropriately set according to the application and purpose. Specifically, the concentration of tin oxide in the conductive oxide is, for example, 0.1% by mass or more, preferably 1% by mass or more, and, for example, 30% by mass or less.

[0044] (Physical properties of light-transmitting conductive layer) The thickness of the light-transmitting conductive layer 3 exceeds 30 nm. If the thickness of the light-transmitting conductive layer 3 is 30 nm or less, the resistivity of the light-transmitting conductive layer 3 increases. The thickness of the light-transmitting conductive layer 3 is preferably 40 nm or more, more preferably more than 50 nm, even more preferably 60 nm or more, particularly preferably 75 nm or more, particularly preferably 100 nm or more, and most preferably 125 nm or more, and is, for example, 500 nm or less, preferably 300 nm or less, more preferably 250 nm or less, even more preferably 200 nm or less, and particularly preferably 175 nm or less. If the thickness of the light-transmitting conductive layer 3 is the above-mentioned lower limit or more, the resistivity can be reduced. If the thickness of the light-transmitting conductive layer 3 is the above-mentioned upper limit or less, cracks can be suppressed.

[0045] The total light transmittance (JIS K 7375-2008) of the light transmissible conductive layer 3 is, for example, 60% or more, preferably 80% or more, more preferably 85% or more, and for example, 100% or less.

[0046] The surface resistance of the light-transmitting conductive layer 3 is, for example, 200 Ω / □ or less, preferably 65 Ω / □ or less, more preferably 45 Ω or less, even more preferably 30 Ω / □ or less, particularly preferably 20 Ω / □ or less, and for example, more than 0 Ω / □. The surface resistance is measured by a four-terminal method in accordance with JIS K7194.

[0047] The resistivity of the light-transmitting conductive layer 3 is, for example, 7.0×10 -4 Ωcm or less, preferably 2.8×10 -4 Ωcm or less, more preferably 2.5×10 -4 Ωcm or less, more preferably 2.2×10 -4 Ωcm or less, for example, more than 0 Ωcm, preferably 0.1×10 -4 Ωcm or more, more preferably 0.5×10 -4 Ωcm or more, more preferably 1.0×10 -4 The resistivity is calculated by multiplying the surface resistance by the thickness.

[0048] (Physical properties of light-transmitting conductive sheet) The thickness of the optically transparent conductive sheet 1 is, for example, 1 μm or more, preferably 10 μm or more, more preferably 15 μm or more, and even more preferably 30 μm or more, and for example, 310 μm or less, preferably 210 μm or less, more preferably 120 μm or less, and even more preferably 90 μm or less.

[0049] The total light transmittance (JIS K 7375-2008) of the light-transmitting conductive sheet 1 is, for example, 60% or more, preferably 80% or more, more preferably 85% or more, and is, for example, 100% or less.

[0050] (Method for manufacturing light-transmitting conductive sheet 1) Next, a method for producing the light-transmitting conductive sheet 1 will be described with reference to Fig. 2. In this method, the light-transmitting conductive layer 3 is formed on the base sheet 2, for example, by a roll-to-roll method.

[0051] In this method, first, a substrate sheet 2 is prepared. Specifically, a hard coat composition is applied to one surface in the thickness direction of a substrate layer 4, dried, and then cured. In this way, a substrate sheet 2 is prepared that includes the substrate layer 4 and the hard coat layer 5 in this order on one side in the thickness direction.

[0052] Next, the light-transmitting conductive layer 3 is formed by sputtering. Specifically, the light-transmitting conductive layer 3 is formed while the base sheet 2 is being transported through a sputtering device 30.

[0053] [Sputtering equipment] As shown in FIG. 2, the sputtering device 30 includes a payout unit 35, a sputtering unit 36, and a winding unit 37 in this order.

[0054] The unwinding section 35 includes a unwinding roll 38 .

[0055] The sputtering section 36 includes a film-forming roll 40, a first film-forming chamber 41, and a second film-forming chamber 42.

[0056] The film-forming roll 40 includes a cooling device (not shown) configured to cool the film-forming roll 40 .

[0057] The first film forming chamber 41 accommodates the first target 51, the first gas supplier 61, and the exhaust port of the first pump 71. The first target 51, the first gas supplier 61, and the exhaust port of the first pump 71 are arranged at intervals with respect to the film forming roll 40. In the first film forming chamber 41, a magnet (not shown) is arranged on the opposite side of the film forming roll 40 with respect to the first target 51. The magnetic field strength of the magnet is adjusted so that the horizontal magnetic field strength on the first target 51 is, for example, 10 mT or more and 200 mT or less.

[0058] The material of the first target 51 may be the same as the conductive oxide described above. The material of the first target 51 includes a sintered body of a conductive oxide. The first target 51 is configured so that power can be applied at a predetermined power density.

[0059] The first gas supply unit 61 is configured to supply a sputtering gas to the first film formation chamber 41. Examples of the sputtering gas include an inert gas such as nitrogen or argon, a mixed gas containing an inert gas and a reactive gas such as oxygen, and preferably a mixed gas. If the sputtering gas is a mixed gas, the first gas supply unit 61 includes a first inert gas supply unit 63 and a first reactive gas supply unit 64, which supply an inert gas and a reactive gas to the first film formation chamber 41, respectively.

[0060] The second film forming chamber 42 is disposed adjacent to the first film forming chamber 41 in the circumferential direction of the film forming roll 40. The second film forming chamber 42 accommodates the second target 52, the second gas supply unit 62, and the outlet of the second pump 72. The second target 52, the second gas supply unit 62, and the outlet of the second pump 72 are disposed at intervals with respect to the film forming roll 40. In the second film forming chamber 42, a magnet (not shown) is disposed on the opposite side of the film forming roll 40 with respect to the second target 52. The magnetic field strength of the magnet is adjusted so that the horizontal magnetic field strength on the second target 52 is, for example, 10 mT or more and 200 mT or less.

[0061] The material of the second target 52 may be the same as the conductive oxide described above. The material of the second target 52 may include a sintered body of a conductive oxide. The second target 52 is configured so that power can be applied at a predetermined power density.

[0062] The second gas supply unit 62 is configured to supply a second sputtering gas to the second film formation chamber 42. Examples of the second sputtering gas include an inert gas and a mixed gas, and preferably a mixed gas. If the second sputtering gas is a second mixed gas, the second gas supply unit 62 includes a second inert gas supply unit 65 and a second reactive gas supply unit 66, from which an inert gas and a reactive gas are respectively supplied to the second film formation chamber 42.

[0063] The winding section 37 includes a winding roll 39 .

[0064] [Method for producing light-transmitting conductive sheet 1] To form the light-transmitting conductive layer 3 on the base sheet 2 using this sputtering device 30, first, the base sheet 2 is laid over a pay-out roll 38, a film-forming roll 40, and a take-up roll 39.

[0065] While driving the first pump 71, the sputtering gas is supplied from the first gas supply unit 61 to the first film formation chamber 41. If the sputtering gas is a mixed gas, the ratio R1 of the reactive gas to the inert gas in the mixed gas is, for example, 0.001 or more, preferably 0.005 or more, and for example, 0.2 or less, preferably 0.1 or less, on a volume basis. The pressure in the first film formation chamber 41 is, for example, 1 Pa or less.

[0066] While driving the second pump 72, the sputtering gas is supplied from the second gas supply 62 to the second film formation chamber 42. If the sputtering gas is a mixed gas, the ratio R2 of the reactive gas to the inert gas in the mixed gas is, for example, 0.001 or more, preferably 0.005 or more, and for example, 0.2 or less, preferably 0.1 or less, on a volume basis. The ratio (R1 / R2) of the ratio R1 to the ratio R2 is, for example, 2 or less, preferably less than 1, more preferably 0.9 or less, even more preferably 0.8 or less, particularly preferably 0.7 or less, and for example, 0.01 or more, preferably 0.1 or more, more preferably 0.5 or more. The pressure in the second film formation chamber 42 is, for example, 1 Pa or less.

[0067] In addition, the cooling device is driven to cool (the surface of) the film-forming roll 40. The temperature (surface temperature) of the film-forming roll 40 is, for example, 20° C. or less, preferably 10° C. or less, more preferably 0.0° C. or less, and for example, −50° C. or more, preferably −25° C. or more.

[0068] An electric potential is applied to each of the first target 51 and the second target 52. Specifically, power is applied to the first target 51 at a power density P1. Power is applied to the second target 52 at a power density P2.

[0069] The power source applied to each of the first target 51 and the second target 52 is not particularly limited, and examples thereof include DC, RF, etc. The power source is preferably DC.

[0070] The ratio (P1 / P2) of the power density P1 in the first target 51 to the power density P2 in the second target 52 is, for example, 0.45 or less, preferably 0.40 or less, more preferably 0.32 or less, and even more preferably 0.30 or less, and is, for example, 0.05 or more, preferably 0.10 or more, more preferably 0.16 or more, and even more preferably 0.20 or more. If the ratio (P1 / P2) of the power density P1 of the first target 51 is equal to or less than the above-mentioned upper limit, a second amorphous conductive film 82 (described later) thicker than a first amorphous conductive film 81 (described later) can be reliably formed. If the ratio (P1 / P2) of the power density P1 of the first target 51 is equal to or less than the above-mentioned lower limit, the first amorphous conductive film 81 that becomes the first region 6 that maintains its amorphousness even in the subsequent crystallization process can be reliably formed.

[0071] Specifically, the power density P1 at the first target 51 and the power density P2 at the second target 52 are appropriately set so that the ratio (P1 / P2) falls within the above-mentioned range, and each is, for example, 0.1 W / cm 2 or more, for example, 15W / cm 2 It is set from the following range:

[0072] Next, the pay-out roll 38, the film-forming roll 40, and the take-up roll 39 are driven, whereby the base sheet 2 is paid out from the pay-out roll 38. The base sheet 2 moves in sequence through the first film-forming chamber 41 and the second film-forming chamber 42 while in contact with the surface of the film-forming roll 40. At this time, the base sheet 2 is cooled by contact with the surface of the film-forming roll 40.

[0073] In the vicinity of the first target 51, the sputtering gas is ionized by applying power to the first target 51 to generate an ionized gas. Then, the ionized gas collides with the first target 51, and the target material of the first target 51 is knocked out as particles, and the particles adhere (deposit) on the base sheet 2, thereby forming a first amorphous conductive film 81.

[0074] Next, in the vicinity of the second target 52, the sputtering gas is ionized by applying power to the second target 52 to generate an ionized gas. Next, the ionized gas collides with the second target 52, and the target material of the second target 52 is knocked out as particles, and the particles adhere (deposit) on the first amorphous conductive film 81, thereby forming a second amorphous conductive film 82.

[0075] Since the first amorphous conductive film 81 and the second amorphous conductive film 82 each contain the same conductive oxide as a main component, the boundary between them may not be clearly observed.

[0076] As a result, an amorphous light-transmitting conductive sheet 10 is obtained which includes the base sheet 2, the first amorphous conductive film 81, and the second amorphous conductive film 82 in that order in the thickness direction.

[0077] Thereafter, the second amorphous conductive film 82 is crystallized (crystallization step). To crystallize the second amorphous conductive film 82, for example, the amorphous light-transmitting conductive sheet 10 is heated. The heating temperature is, for example, 80° C. or higher, preferably 100° C. or higher, more preferably 150° C. or higher, and for example, less than 200° C., preferably 180° C. or lower. The heating time is, for example, 1 minute or more, preferably 10 minutes or more, more preferably 30 minutes or more, even more preferably 1 hour or more, and for example, 5 hours or less, preferably 3 hours or less. Alternatively, the amorphous light-transmitting conductive sheet 10 can be left at room temperature for a long time. For example, the amorphous light-transmitting conductive sheet 10 is left in an atmosphere of 20° C. or higher and 40° C. or lower for 500 hours or more, preferably 1000 hours or more and 2000 hours or less.

[0078] By the above-mentioned heating or by leaving at room temperature for a long time, the second amorphous conductive film 82 crystallizes, whereas the first amorphous conductive film 81 does not crystallize. This is because the ratio (P1 / P2) of the power density P1 in the first target 51 is within the above-mentioned range (e.g., 0.45 or less), and therefore the first amorphous conductive film 81 has more impurities (e.g., hydrogen atoms and / or carbon atoms) than the second amorphous conductive film 82, and therefore maintains its amorphous nature.

[0079] As a result, the first amorphous conductive film 81 forms the first region 6, and the second amorphous conductive film 82 forms the second region .

[0080] As a result, an amorphous light-transmitting conductive sheet including the base sheet 2 and the light-transmitting conductive layer 3 having the first region 6 and the second region 7 is obtained.

[0081] This light-transmitting conductive sheet 1 is used for various applications, such as touch sensors, electromagnetic wave shields, dimming elements (voltage-driven dimming elements such as PDLC, PNLC, and SPD, and current-driven dimming elements such as electrochromic (EC)), photoelectric conversion elements (electrodes of solar cell elements such as organic thin-film solar cells and dye-sensitized solar cells), heat ray control members (near-infrared reflecting and / or absorbing members and far-infrared reflecting and / or absorbing members), antenna members (light-transmitting antennas), heater members (light-transmitting heaters), and image display devices.

[0082] (Effects of one embodiment) The light-transmitting conductive layer 3 of this light-transmitting conductive sheet 1 has a low specific resistance, and cracks are suppressed.

[0083] Specifically, since the crystalline second region 7 is thicker than the amorphous region in the first region 6, it is possible to reduce the resistivity of the light-transmitting conductive layer 3. Furthermore, since the thickness of the light-transmitting conductive layer 3 exceeds 30 nm, it is possible to reduce the resistivity of the light-transmitting conductive layer 3.

[0084] Furthermore, in the light-transmitting conductive sheet 1, if the ratio of the thickness of the second region 7 to the thickness of the light-transmitting conductive layer 3 is 0.73 or more, the light-transmitting conductive layer 3 can ensure an even lower resistivity and even lower surface resistance.

[0085] Touch sensors, light control elements, photoelectric conversion elements, heat ray control members, antennas, electromagnetic wave shielding members, heater members, and image display devices are provided with the above-mentioned light-transmitting conductive sheet 1, and therefore have excellent reliability.

[0086] (Modification) In the modified example, the same components and steps as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted. In addition, the modified example can achieve the same effects as those in the first embodiment, unless otherwise specified. Furthermore, the first embodiment and its modified example can be appropriately combined.

[0087] In one embodiment, the light-transmitting conductive layer 3 includes a single first region 6, but may include, for example, a plurality of first regions 6. For example, the first region 6, the second region 7, and the first region 6 may be arranged toward one side in the thickness direction. In addition, the light-transmitting conductive layer 3 includes a single second region 7, but may include, for example, a plurality of second regions 7. Then, the light-transmitting conductive layer 3 may include a plurality of first regions 6 and a plurality of second regions 7.

[0088] For example, in this light-transmitting conductive layer 3, the first region 6 and the second region 7 may be alternately arranged toward one side in the thickness direction. For example, as shown in FIG. 3, the first region 6, the second region 7, the first region 6, and the second region 7 are arranged in order toward one side in the thickness direction. To form the light-transmitting conductive layer 3 shown in FIG. 3, for example, a single first amorphous conductive film 81 and a single second amorphous conductive film 82 are formed using the sputtering device 30 shown in FIG. 2, and the amorphous light-transmitting conductive sheet 10 wound up by the winding roll 39 is set (rewound) again on (the unwinding roll 38 of) the sputtering device 30, and a third amorphous conductive film 83 and a fourth amorphous conductive film 84 are formed in order on one side in the thickness direction of the second amorphous conductive film 82. Thereafter, the above-mentioned laminate is heated or left at room temperature for a long period of time. As a result, the second amorphous conductive film 82 and the fourth amorphous conductive film 84 are crystallized to form the second region 7. Meanwhile, the first amorphous conductive film 81 and the third amorphous conductive film 83 maintain their amorphous nature to form the first region 6. Therefore, the first region 6, the second region 7, the first region 6, and the second region 7 are arranged in this order toward one side in the thickness direction.

[0089] In a modification in which a plurality of first regions 6 are arranged, the thickness of the first region 6 is the sum of the thicknesses of the plurality of first regions 6. In a modification in which a plurality of second regions 7 are arranged, the thickness of the second region 7 is the sum of the thicknesses of the plurality of second regions 7.

[0090] The base sheet 2 may further include another functional layer. The functional layer may be, for example, a dielectric material, and the surface resistance of the functional layer may be, for example, 1×10 6 Ω / □ or more, preferably 1×10 8The functional layer has a resistivity of Ω / □ or more. The functional layer contains a resin and / or an inorganic material. The functional layer may be formed as a single layer, a plurality of layers, or a mixture of a resin and an inorganic material. For example, as shown by the imaginary line in FIG. 1, the functional layer may be provided with an anti-blocking layer 25 that is disposed on the other surface in the thickness direction of the base film 13 and is made of a mixture of a resin and inorganic particles.

[0091] Although not shown, the resin layer of the present invention may be only the substrate layer 4, or may be only the hard coat layer 5. The resin layer of the present invention may be a functional layer.

[0092] In one embodiment, the number of light-transmitting conductive layers 3 provided in the light-transmitting conductive sheet 1 is 1, but it may be, for example, 2 (not shown). In this case, the light-transmitting conductive layer 3, the base sheet 2, and the light-transmitting conductive layer 3 are arranged toward one side in the thickness direction. In other words, two light-transmitting conductive layers 3 are sandwiched by one base sheet 2 in the thickness direction.

[0093] In one embodiment, the sputtering apparatus 30 includes a deposition roll 40, but may alternatively include a deposition plate having a flat surface.

[0094] In one embodiment, a sputtering apparatus 30 having two film formation chambers is used, but a sputtering apparatus 30 having one film formation chamber can also be used. For example, a first amorphous conductive film 81 is formed in a first sputtering, and the amorphous light-transmitting conductive sheet 10 is wound up by a winding roll 39, and this is set (rewound) on (the pay-out roll 38 of) the same sputtering apparatus 30, and a second amorphous conductive film 82 is formed in a second sputtering. In this modified example, for example, the ratio (P1 / P2) of the power density P1 in the first sputtering to the power density P2 in the second sputtering is the same as the ratio (P1 / P2) of the power density P1 in the first target 51 to the power density P2 in the second target 52.

[0095] In one embodiment, the temperature (surface temperature) of the film-forming roll 40 is cooled (20° C. or less). In a modified example, the film-forming roll 40 is heated. The temperature of the film-forming roll 40 is, for example, more than 20° C. and 180° C. or less.

[0096] In one embodiment, the sputtering apparatus 30 including the first film formation chamber 41 and the second film formation chamber 42 is used, but the number of film formation chambers is not limited to this. A sputtering apparatus 30 including three or more film formation chambers can also be used. For example, a sputtering apparatus 30 including three film formation chambers has the first film formation chamber 41, the second film formation chamber 42, and a third film formation chamber (not shown). The third film formation chamber contains, for example, a third target (not shown), a third gas supply (not shown), and an outlet (not shown) of a third pump. When a third mixed gas is supplied as a sputtering gas, the third gas supply includes a third inert gas supply (not shown) and a third reactive gas supply (not shown), and an inert gas and a reactive gas are supplied to the third film formation chamber from each of them. The light-transmitting conductive layer 3 can be formed by applying power to the first target 51, the second target 52, and the third target. In this modification, the first target 51 is sputtered to form a first amorphous conductive film 81, and the second target 52 and the third target are sputtered to form a second amorphous conductive film 82. EXAMPLES

[0097] Specific numerical values ​​of the blending ratio (content ratio), physical property values, parameters, etc. used in the following description can be replaced with the upper limit values ​​(numerical values ​​defined as "not more than" or "less than") or lower limit values ​​(numerical values ​​defined as "not less than" or "exceeding") of the corresponding blending ratio (content ratio), physical property values, parameters, etc. described in the above "Form for carrying out the invention." In addition, unless otherwise specified in the following description, "parts" and "%" are based on mass.

[0098] Example 1 An ultraviolet-curable hard coat composition containing an acrylic resin was applied to one surface in the thickness direction of a substrate layer 4 made of a long PET film (manufactured by Mitsubishi Plastics, Inc., thickness 50 μm), and cured by ultraviolet irradiation to form a hard coat layer 5 having a thickness of 2 μm. In this way, a substrate sheet 2 including the substrate layer 4 and the hard coat layer 5 was prepared.

[0099] Next, the base sheet 2 was set in the sputtering device 30. The temperature of the film-forming roll 40 was set to -8°C. The first pump 71 and the second pump 72 were driven. In the sputtering device 30, the materials of the first target 51 and the second target were both sintered bodies of indium oxide and tin oxide. The tin oxide concentration in the sintered body was 10 mass%.

[0100] Argon was supplied from the first inert gas supplier 63 to the first film formation chamber 41, and oxygen was supplied from the first reactive gas supplier 64 to the first film formation chamber 41. The air pressure in the first film formation chamber 41 was 0.4 Pa. The ratio R1 (volume basis) of oxygen to argon in the mixed gas (total amount of argon and oxygen) in the first film formation chamber 41 was 0.010. Power was applied to the first target 51 at a power density P1 to sputter the first target 51. The horizontal magnetic field strength on the first target 51 was 90 mT. DC was used as the power source applied to the first target 51.

[0101] Argon was supplied from the second inert gas supply 65 to the second film formation chamber 42, and oxygen was supplied from the second reactive gas supply 66 to the second film formation chamber 42. The air pressure in the second film formation chamber 42 was 0.4 Pa. The ratio R2 (volume basis) of oxygen to argon in the mixed gas (total amount of argon and oxygen) in the second film formation chamber 42 was 0.017. Power was applied to the second target 52 at a power density P2 to sputter the second target 52. The horizontal magnetic field intensity on the second target 52 was 90 mT. DC was used as the power source applied to the second target 52. The ratio (P1 / P2) of the power density P1 in the first target 51 to the power density P2 in the second target 52 was 0.31.

[0102] As a result, the first amorphous conductive film 81 and the second amorphous conductive film 82 were formed in this order on one side in the thickness direction of the base sheet 2. As a result, an amorphous light-transmitting conductive sheet 10 was produced which was provided with the base sheet 2, the first amorphous conductive film 81, and the second amorphous conductive film 82 in this order toward one side in the thickness direction.

[0103] The amorphous light-transmitting conductive sheet 10 was then left to stand at 23° C. for 1500 hours, and then heated in a hot air oven at 155° C. for 1.5 hours. As a result, a light-transmitting conductive sheet 1 was obtained.

[0104] (Example 2, Example 4 to Comparative Example 5) As shown in Table 1, the ratio (P1 / P2) of the power density P1 of the first target 51 to the power density P2 of the first target 51, the reactive gas ratio R1 / R2, the total thickness of the light-transmitting conductive layer 3, etc. were changed, and the same process as in Example 1 was performed to obtain a light-transmitting conductive sheet 1.

[0105] Example 3 As shown in Table 1, the ratio (P1 / P2) of the power density P1 of the first target 51 to the power density P2 of the first target 51 was changed, and the first amorphous conductive film 81 and the second amorphous conductive film 82 were formed in the same manner as in Example 1 to form the amorphous light-transmitting conductive sheet 10, which was then wound up on the winding roll 39, and the amorphous light-transmitting conductive sheet 10 was set again in the sputtering device 30 (rewound), forming the third amorphous conductive film 83 and the fourth amorphous conductive film 84. Thereafter, this was left to stand at 23°C for 1500 hours, and further heated in a hot air oven at 155°C for 1.5 hours.

[0106] (Thickness measurement, confirmation of crystallinity, evaluation, etc.) The following items were evaluated for the light-transmitting conductive sheets 1 of each of the Examples and Comparative Examples. The results are shown in Table 1.

[0107] (Thickness of light-transmitting conductive layer and determination of amorphous or crystalline) After the cross section of the light-transmitting conductive sheet 1 was adjusted by the FIB microsampling method, the cross section was observed by FE-TEM. Using a TEM image taken at a magnification of 200,000 times, the thickness of the black region (first region 6) and the thickness of the gray region (second region 7) of the light-transmitting conductive layer 3 were measured. In addition, these were added together to obtain the thickness of the light-transmitting conductive layer 3.

[0108] In addition, cross-sectional TEM observation was performed at a high magnification (2 million times) on each of the black region and the gray region. Lattice fringes were confirmed over the entire region in the cross-sectional view of the gray region, and therefore it was found to be crystalline and to be the second region 7. On the other hand, lattice fringes were not confirmed over the entire region in the cross-sectional view of the black region, or lattice fringes were confirmed in a small region in the cross-sectional view, but the lattice fringes of the lattice fringes were in a minute region, and therefore amorphous was predominant, and therefore it was found to be the first region 6.

[0109] The apparatus and measurement conditions are as follows. FIB equipment: Hitachi FB2200, Acceleration voltage: 10kV FE-TEM equipment: JEOL JEM-2800, accelerating voltage: 200kV The TEM photograph of Example 2 is shown in Figure 4. The TEM photograph of Example 3 is shown in Figure 5.

[0110] (Surface resistance) The surface resistance of the light-transmitting conductive layer 3 was measured by a four-terminal method in accordance with JIS K7194 (1994). The surface resistance was evaluated according to the following criteria. <Standards> ◎: Surface resistance is 20 Ω / □ or less. ○: Surface resistance is greater than 20Ω / □ and less than 45Ω / □. △: Surface resistance is over 45 Ω / □ and less than 65 Ω / □. ×: Surface resistance exceeds 65 Ω / □.

[0111] (specific resistance) The specific resistance was obtained by multiplying the surface resistance of the light-transmitting conductive layer 3 by the thickness of the light-transmitting conductive layer 3. The specific resistance was evaluated according to the following criteria. <Evaluation criteria> ◎: Resistivity is 2.2×10 -4 Ω·cm or less. 〇: Resistivity is 2.2×10 -4 Exceeding Ω cm, 2.8×10 -4 Ω·cm or less. ×: Resistivity is 2.8×10 -4 Exceeds Ω·cm.

[0112] (crack) The light-transmitting conductive sheet 1 was cut into a size of 5 cm × 50 cm. Then, 15 sections of 5 cm × 10 cm were defined in a plan view, and the surface of the light-transmitting conductive layer 3 in each section was visually observed. The level of cracks in the light-transmitting conductive layer 3 was evaluated according to the following criteria. <Evaluation criteria> ○: The number of sections where cracks were observed was 0 to 6. △: Cracks are observed in 7 or more and 12 or less sections. ×: Cracks were observed in 13 or more sections.

[0113] [Table 1] [Explanation of symbols]

[0114] 1. Light-transmitting conductive sheet 2. Base sheet 2 Base material 3 Light-transparent conductive layer 6 First area 7 Second area 11 Base material

Claims

1. A resin layer and a light-transmitting conductive layer are provided in this order toward one side in a thickness direction, the light-transmitting conductive layer includes a single first region and a single second region, the first region and the second region being arranged in order toward one side in the thickness direction; In cross section, the amorphous area ratio in the first region is 0.6 or more; the area ratio of the crystalline material in the second region is 0.7 or more; The thickness of the light-transmitting conductive layer is greater than 30 nm; The thickness of the first region is 10 nm or more, A light-transmitting conductive sheet, characterized in that a ratio of a thickness of the second region to a thickness of the first region is 2 or more and 100 or less.

2. 2 . The light-transmitting conductive sheet according to claim 1 , wherein a ratio of a thickness of the second region to a thickness of the light-transmitting conductive layer is 0.73 or more.

3. 3. The light-transmitting conductive sheet according to claim 1, wherein the material of the light-transmitting conductive layer is a composite oxide containing indium and tin.

4. A touch sensor comprising the light-transmitting conductive sheet according to any one of claims 1 to 3.

5. A light-adjusting element comprising the light-transmitting conductive sheet according to any one of claims 1 to 3.

6. A photoelectric conversion element comprising the light-transmitting conductive sheet according to any one of claims 1 to 3.

7. A heat ray control member comprising the light-transmitting conductive sheet according to any one of claims 1 to 3.

8. An antenna comprising the light-transmitting conductive sheet according to any one of claims 1 to 3.

9. An electromagnetic wave shielding member comprising the light-transmitting conductive sheet according to any one of claims 1 to 3.

10. An image display device comprising the light-transmitting conductive sheet according to any one of claims 1 to 3.

Images