Processing device, program, and semiconductor device manufacturing method

Abstract

Temperature control is enabled by creating a process recipe by simply specifying a wafer temperature that is to be used as a target temperature, reducing setting errors.　The present invention is provided with: a storage unit for storing at least a temperature control table in which a set value of a heater for heating a substrate and a set value of a lamp for heating the substrate are set for a target temperature of the substrate, and a process recipe constituted by a plurality of steps for processing the substrate; and, a control unit for executing the process recipe. The control unit is configured to search the temperature control table by a target temperature that corresponds to a substrate temperature set in the process recipe, and set a set value being set for the target temperature that corresponds to the substrate temperature to at least one of a heater temperature set value, a heater temperature ratio, a lamp power set value, and a ramp rate value in the process recipe.

Description

[Technical field]

[0001] The present disclosure relates to a processing device, a program, and a method for manufacturing a semiconductor device. [Background technology]

[0002] 2. Description of the Related Art One process for manufacturing semiconductor devices is a substrate processing apparatus that heats a substrate and performs processes such as nitriding, oxidizing, and annealing.

[0003] Patent Document 1 discloses a substrate processing apparatus that uses a susceptor heater and a lamp heating unit in combination to increase the temperature of a processing chamber.

[0004] Patent Document 2 discloses a substrate processing apparatus that heats a substrate with a resistance heater and further uses a lamp heater as an auxiliary heater.

[0005] Patent Document 3 discloses a substrate processing apparatus configured so that the lamp temperature and the heater temperature can be set on a setting screen. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2012-231001 A [Patent Document 2] JP 2007-311618 A [Patent Document 3] JP 2008-288282 A Summary of the Invention [Problem to be solved by the invention]

[0007] In the substrate processing apparatus as described above, when heating a substrate, it is necessary to set a combination of set values ​​for a plurality of temperature control items such as a heater, a lamp unit, and a high frequency power supply.

[0008] According to the present disclosure, a process recipe can be created and temperature control can be performed simply by specifying a target wafer temperature, thereby reducing setting errors. [Means for solving the problem]

[0009] According to one aspect of the present disclosure, there is provided a technology including: a memory unit that stores at least a temperature control table in which a setting value of a heater that heats a substrate and a setting value of a lamp that heats the substrate are set for a target temperature of the substrate; and a process recipe consisting of a plurality of steps for processing the substrate; and a control unit that executes the process recipe, wherein the control unit is configured to search the temperature control table with a target temperature equivalent to a substrate temperature set in the process recipe, and to set the setting value set for the target temperature equivalent to the substrate temperature to at least one of a heater temperature setting value, a heater temperature ratio, a lamp power setting value, and a ramp rate value in the process recipe. Effect of the Invention

[0010] According to the present disclosure, a process recipe can be created and temperature control can be performed simply by specifying a target wafer temperature, thereby reducing setting errors. [Brief description of the drawings]

[0011] [Figure 1] 1 is a vertical cross-sectional view showing a substrate processing apparatus 100 suitably used in an embodiment of the present disclosure. [Diagram 2] FIG. 1 is a schematic configuration diagram of a controller 121 of a substrate processing apparatus 100 suitably used in an embodiment of the present disclosure, showing a control system of the controller in a block diagram. [Diagram 3] FIG. 2 is a diagram showing an example of temperature control items when heating a substrate, and setting values ​​of setting items for each temperature control item. [Figure 4] FIG. 4 is a diagram showing an example of a temperature control table stored in the storage device or the external storage device. [Diagram 5]FIG. 2 is a diagram showing an example of a process recipe stored in a storage device or an external storage device; [Figure 6] 11A and 11B are diagrams for explaining a download process of a process recipe and a temperature control table at the start of the process recipe. [Figure 7] 4 is a flowchart for explaining a temperature control operation in each step. [Figure 8] 10 is a flowchart for explaining a procedure for performing a recipe editing process on an operation screen. [Figure 9] FIG. 13 is a diagram for explaining a data calculation method for a temperature control table. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. Note that all of the drawings used in the following description are schematic, and the dimensional relationships of the elements, the ratios of the elements, etc. shown in the drawings do not necessarily match the actual ones. Furthermore, the dimensional relationships of the elements, the ratios of the elements, etc. between multiple drawings do not necessarily match.

[0013] (1) Configuration of the substrate processing device The substrate processing apparatus 100 has a processing vessel 203, which is formed of a dome-shaped upper vessel 210 as a first vessel and a bowl-shaped lower vessel 211 as a second vessel, and the upper vessel 210 is placed on the lower vessel 211. The upper vessel 210 is made of a non-metallic material such as aluminum oxide or quartz, and the lower vessel 211 is made of, for example, aluminum. A light-transmitting window 278 is provided on the upper surface of the processing vessel 203, and a lamp unit (light source) 280 is provided outside the processing vessel 203 corresponding to the light-transmitting window 278. A susceptor 217, which is a heater-integrated substrate holder (substrate holding means) to be described later, is made of a non-metallic material such as aluminum nitride, ceramics, or quartz, thereby reducing metal contamination that is introduced into a film during processing.

[0014] The shower head 236 is provided at the top of the processing chamber (reaction chamber) 201, and includes a ring-shaped frame 233, a light-transmitting window portion 278, a gas inlet 234, a buffer chamber 237, an opening 238, a shielding plate 240, and a gas outlet 239. The buffer chamber 237 is provided as a dispersion space for dispersing the gas introduced from the gas inlet 234.

[0015] A gas supply pipe 232 for supplying gas is connected to the gas inlet 234, and the gas supply pipe 232 is connected to a gas cylinder of a reaction gas 230 (not shown) via a valve 243a which is an opening / closing valve and a mass flow controller 241 which is a flow rate controller (flow rate control means). The reaction gas 230 is supplied to the processing chamber 201 from a shower head 236, and a gas exhaust port 235 for exhausting the gas is provided on the side wall of the lower container 211 so that the gas after the substrate processing flows from the periphery of the susceptor 217 toward the bottom of the processing chamber 201. A gas exhaust pipe 231 for exhausting the gas is connected to the gas exhaust port 235, and the gas exhaust pipe 231 is connected to a vacuum pump 246 which is an exhaust device via an APC 242 which is a pressure regulator and a valve 243b which is an opening / closing valve.

[0016] A cylindrical electrode 215, which is a first electrode formed in a cylindrical shape, for example a cylindrical shape, is provided as a discharge mechanism (discharge electrode) for exciting the supplied reactive gas 230. The cylindrical electrode 215 is installed on the outer periphery of the processing vessel 203 (upper vessel 210) and surrounds the plasma generation region 224 in the processing chamber 201. A high-frequency power source 273 that applies high-frequency power is connected to the cylindrical electrode 215 via a matching box 272 that matches impedance.

[0017] Further, the cylindrical magnet 216, which is a magnetic field forming mechanism (magnetic field forming means) formed in a cylindrical shape, for example, a cylindrical shape, is a cylindrical permanent magnet. The cylindrical magnet 216 is disposed near the upper and lower ends of the outer surface of the cylindrical electrode 215. The upper and lower cylindrical magnets 216, 216 have magnetic poles at both ends (inner peripheral end and outer peripheral end) along the radial direction of the processing chamber 201, and the magnetic poles of the upper and lower cylindrical magnets 216, 216 are set in opposite directions. Therefore, the magnetic poles on the inner peripheral parts are opposite polarities, and thus magnetic lines of force are formed along the inner peripheral surface of the cylindrical electrode 215 in the cylindrical axial direction.

[0018] At the center of the bottom side of the processing chamber 201, a susceptor 217 is disposed as a substrate holder (substrate holding means) for holding a wafer 200, which is a substrate. The susceptor 217 is formed of a non-metallic material, such as aluminum nitride, ceramics, or quartz, and has a heater 217b integrally embedded therein as a heating mechanism (heating means) so as to be able to heat the wafer 200. The heater 217b is configured so as to be able to heat the wafer 200 by applying electric power thereto. The heater 217b is configured as a first heating device that heats the wafer 200 placed on the susceptor 217.

[0019] A second electrode for further varying the impedance is also provided inside the susceptor 217, and this second electrode is grounded via an impedance variable mechanism 274. The impedance variable mechanism 274 is composed of a coil and a variable capacitor, and is capable of controlling the potential of the wafer 200 via the above-mentioned electrodes and the susceptor 217 by controlling the number of coil patterns and the capacitance value of the variable capacitor.

[0020] A processing furnace 202 for processing a wafer 200 by magnetron discharge in a magnetron type plasma source is composed of at least a processing chamber 201, a processing vessel 203, a susceptor 217, a cylindrical electrode 215, a cylindrical magnet 216, a shower head 236, and an exhaust port 235, and is capable of performing plasma processing on the wafer 200 in the processing chamber 201.

[0021] A shielding plate 223 is provided around the cylindrical electrode 215 and the cylindrical magnet 216 to effectively block the electric field and magnetic field formed by the cylindrical electrode 215 and the cylindrical magnet 216 so as to prevent them from adversely affecting the external environment or other equipment such as a processing furnace.

[0022] The susceptor 217 is insulated from the lower container 211, and is provided with a susceptor lifting mechanism (lifting means) 268 for lifting and lowering the susceptor 217. The susceptor 217 is provided with a through hole 217a, and the bottom surface of the lower container 211 is provided with at least three wafer push-up pins 266 for pushing up the wafer 200. The through holes 217a and the wafer push-up pins 266 are arranged so that when the susceptor 217 is lowered by the susceptor lifting mechanism 268, the wafer push-up pins 266 pass through the through holes 217a without coming into contact with the susceptor 217.

[0023] In addition, a gate valve 244 serving as a check valve is provided on the side wall of the lower container 211. When the gate valve 244 is open, the wafer 200 can be transported in or out of the processing chamber 201 by a transport mechanism (transport means) not shown in the figure, and when the gate valve 244 is closed, the processing chamber 201 can be closed airtight.

[0024] Next, the peripheral structure of the lamp unit 280 will be described. The lamp unit 280 is disposed on the frame 233 and has at least one heat lamp (four in this embodiment). The light-transmitting window 278 is formed in a cylindrical shape and is supported by the frame 233 via a sealing member (not shown). The light-transmitting window 278 is made of a transparent member that transmits light and heat irradiated from the lamp unit 280. The lamp unit 280 is configured as a second heating device that heats the wafer 200 from outside the processing vessel 203.

[0025] Furthermore, a cooling passage (not shown) serving as a cooling means is provided within the frame 233. By circulating a cooling medium (e.g., cooling water) through this cooling passage, the environmental temperature around the seal member is lowered.

[0026] (2) Configuration of the control unit 2, the controller 121, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, which is a storage unit, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. An input / output device 402, which is configured as, for example, a touch panel, is connected to the controller 121.

[0027] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), etc. In the storage device 121c, a control program for controlling the operation of the substrate processing apparatus, a recipe in which a predetermined processing procedure (hereinafter also referred to as a step) and conditions are described, and the like are readably stored. A process recipe, which is mainly composed of a plurality of steps, is combined so that each step in a predetermined process can be executed by the controller 121 to obtain a predetermined result, and functions as a program. Hereinafter, recipes including a process recipe and a control program are collectively referred to simply as a program. In addition, hereinafter, a process recipe is also simply referred to as a recipe. When the word program is used in this specification, it may include only a recipe, only a control program, or both. The RAM 121b is configured as a memory area (work area) in which a program, data, etc. read by the CPU 121a are temporarily stored.

[0028] The I / O port 121d is connected to the above-mentioned valves 243a, 243b, the mass flow controller 241, the APC 242, the vacuum pump 246, the matching box 272, the high frequency power supply 273, the heater 217b, the susceptor lifting mechanism 268, the impedance variable mechanism 274, the gate valve 244, the lamp unit 280, etc.

[0029] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a process recipe from the storage device 121c in response to an input of an operation command from the input / output device 402, etc. As shown in Fig. 1, the CPU 121a is configured to control the APC 242, the valve 243b, and the vacuum pump 246 through the I / O port 121d and a signal line A, the susceptor lift mechanism 268 through a signal line B, the gate valve 244 through a signal line C, the matching box 272 and the high-frequency power supply 273 through a signal line D, the mass flow controller 241 and the valve 243a through a signal line E, and the heater 217b, the impedance variable mechanism 274, and the lamp unit 280 through a signal line F, in accordance with the contents of the read process recipe.

[0030] The controller 121 can be configured by installing the above-mentioned program stored in the external storage device 403, which is a storage unit, in a computer. The external storage device 403 includes, for example, a semiconductor memory such as a USB memory. The storage device 121c and the external storage device 403 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. When the term recording media is used in this disclosure, it may include only the storage device 121c alone, only the external storage device 403 alone, or both. Note that the program may be provided to the computer using a communication means such as the Internet or a dedicated line, without using the external storage device 403.

[0031] (3) Substrate processing Next, a method of performing a predetermined process on the surface of the wafer 200 or on the surface of an undercoat film formed on the wafer 200 as one step of a semiconductor device manufacturing process using the substrate processing apparatus configured as described above will be described. In the following description, the operation of each part constituting the substrate processing apparatus 100 is controlled by a controller 121.

[0032] The wafer 200 is carried into the processing chamber 201 by a transfer mechanism (not shown) for transferring the wafer from outside the processing chamber 201 constituting the processing furnace 202, and transferred onto the susceptor 217. Details of this transfer operation are as follows. The susceptor 217 is lowered to a substrate transfer position, and the tips of the wafer push-up pins 266 pass through the through holes 217a of the susceptor 217. At this time, the push-up pins 266 are in a state of being protruded by a predetermined height from the surface of the susceptor 217. Next, the gate valve 244 provided in the lower vessel 211 is opened, and the wafer 200 is placed on the tips of the wafer push-up pins 266 by the transfer mechanism (not shown). When the transfer mechanism retreats to the outside of the processing chamber 201, the gate valve 244 is closed. When the susceptor 217 is raised by the susceptor lifting mechanism 268, the wafer 200 can be placed on the upper surface of the susceptor 217, and the susceptor 217 is then raised to a position where the wafer 200 is processed.

[0033] The heater 217b embedded in the susceptor 217 is preheated, and the lamp unit 280 is also heated as necessary, to heat the loaded wafer 200 to a wafer temperature (substrate temperature) that is a predetermined processing temperature. The pressure in the processing chamber 201 is maintained at a predetermined pressure by using the vacuum pump 246 and the APC 242.

[0034] When the temperature of the wafer 200 reaches the wafer temperature and stabilizes, the reactive gas is introduced from the gas inlet 234 through the gas outlet 239 of the shielding plate 240 toward the upper surface (processing surface) of the wafer 200 placed in the processing chamber 201. The gas flow rate at this time is set to a predetermined flow rate. At the same time, high frequency power is applied to the cylindrical electrode 215 from the high frequency power source 273 via the matching device 272. The applied power is of a predetermined output value. At this time, the impedance variable mechanism 274 is controlled in advance to obtain a desired impedance value.

[0035] A magnetron discharge occurs under the influence of the magnetic field of the cylindrical magnets 216, 216, and charges are trapped in the space above the wafer 200, generating high-density plasma in the plasma generation region 224. The generated high-density plasma then performs plasma processing on the surface of the wafer 200 on the susceptor 217. After plasma processing, the wafer 200 is transferred out of the processing chamber 201 by a transfer mechanism (not shown) in the reverse order of the substrate transfer.

[0036] (4) Temperature control by the control unit Next, a description will be given of temperature control by the controller 121 in an embodiment of the present disclosure. In the present disclosure, the controller 121 is configured to control the wafer temperature using the setting value of the heater 217b and the setting value of the lamp unit 280 in a temperature control table stored in the storage device 121c or the external storage device 403 when executing a process recipe in the above-mentioned substrate processing step.

[0037] Here, the wafer temperature during processing of the wafer 200 is affected by the set values ​​of a number of setting items of a number of temperature control items such as a heater, a lamp unit, a high frequency power supply, a microwave generator, and a chiller, as shown in FIG.

[0038] In the present disclosure, the storage device 121c or the external storage device 403 stores a temperature control table that associates set values ​​for multiple setting items of the heater 217b that heats the wafer 200 with set values ​​for multiple setting items of the lamp unit 280 that heats the wafer 200, with respect to a wafer temperature that is a target temperature of the wafer 200, and a process recipe that is composed of multiple steps for processing the wafer 200 in the above-mentioned substrate processing process. Fig. 4 shows an example of the temperature control table, and Fig. 5 shows an example of the process recipe.

[0039] 4, the temperature control table is set by associating (associating) the following with the wafer temperature (°C) that is the target temperature when set for each step of the process recipe: the temperature setting value (°C) of the heater 217b that is the heater control value for controlling the heater 217b, the temperature ratio that is the power ratio between the input side and the output side of the heater 217b, the temperature rise time (seconds) of the temperature rise process when raising the temperature of the lamp unit 280 that is the lamp control value for controlling the lamp unit 280, the power setting value (%) of the temperature rise process of the lamp unit 280, the ramp rate (% / second) of the temperature rise process of the lamp unit 280, the power setting value (%) of the process process when stabilizing the lamp unit 280 at the wafer temperature set after the temperature rise, and the ramp rate (% / second) of the process process of the lamp unit 280. That is, the lamp control value has a first control value that is the control value when raising the temperature to the wafer temperature set in the process recipe, and a second control value that is the control value when stabilizing the wafer temperature at the wafer temperature set in the process recipe. The first and second control values ​​can be set for one target temperature, i.e., the wafer temperature, and the first and second control values ​​can be set for one of a plurality of steps in the process recipe. This allows the heater 217b and the lamp unit 280 to control the temperature of the wafer 200, and the wafer 200 can be stabilized at a desired temperature for processing.

[0040] As shown in FIG. 5, the process recipe stores the event name, event time, wafer temperature, on / off and power setting value (W) of the high frequency power supply, control mode of the lamp unit 280, position of the susceptor 217, gas flow rate, processing pressure, etc., in correspondence with each other at each step.

[0041] FIG. 6 is a diagram showing the download process of the process recipe and the temperature control table at the start of the process recipe.

[0042] The operation unit 601 has an editing screen and is configured to be able to edit the process recipe and the temperature control table. The operation unit 601 is also configured to transmit to the controller 121. The operation unit 601 is also configured to display the execution state of the process recipe, etc. on the operation screen.

[0043] The controller 121 is also configured to request downloading of process recipes and temperature control tables, and to communicate with a number of temperature control items such as the heater 217 b, the lamp unit 280, and the high frequency power supply 273.

[0044] First, when a recipe start operation is input in the operation unit 601, the controller 121 is notified. Then, a download request for a process recipe and a temperature control table is transmitted from the controller 121 to the operation unit 601. As a result, the process recipe and the temperature control table are downloaded from the operation unit 601 to the controller 121, and the controller 121 can control the process recipe using the temperature control table.

[0045] Next, the temperature control operation S100 using lamp heating by the controller 121 in each step of the process recipe will be described with reference to FIG.

[0046] When starting each step (event) of the process recipe, the controller 121 determines whether or not the temperature function selection flag in the process recipe is on (S101).

[0047] If the temperature function selection flag is on, the controller 121 determines whether the temperature control mode is the wafer temperature setting mode (S102).

[0048] Then, when the temperature control mode is wafer temperature setting, the controller 121 searches the temperature control table for a target temperature corresponding to the wafer temperature set in the process recipe (S103), and determines whether or not the target temperature, which is data matching the wafer temperature in the process recipe, is in the temperature control table (S104).

[0049] Then, if there is no matching data in the temperature control table, the process is terminated; if there is matching data, the setting value set for the target temperature corresponding to the matching wafer temperature is set to at least one of the temperature setting value of heater 217b in the process recipe, the temperature ratio of heater 217b, and, if a temperature increase is set in lamp unit 280, the power setting value of lamp unit 280 in the temperature increase process of lamp unit 280 and the ramp rate value (S105), and a predetermined step of the process recipe is executed.

[0050] Specifically, in steps No. 1 to No. 5 and No. 9 of the process recipe in FIG. 5, the power setting value of the lamp unit 280 is set to 0 and the lamp rate is set to 0, resulting in no lamp control. Therefore, the controller 121 controls only the heater 217b and executes temperature control for these steps No. 1 to No. 5 and No. 9.

[0051] 5, the temperature control table of FIG. 4 is searched for a target temperature equivalent to a wafer temperature of 800° C. set in step No. 6, and the following are obtained which are set for a wafer temperature of 800° C. in No. 7 of the temperature control table of FIG. 4: a temperature setting value of 927° C. for heater 217b, a temperature ratio of 0.57 for heater 217b, a heating time of 40 seconds for lamp unit 280, a power setting value of 74% in the heating process of lamp unit 280, a ramp rate of 10% / sec in the heating process of lamp unit 280, a power setting value of 64% in the process process of lamp unit 280, and a ramp rate of 0.2% / sec in the process process of lamp unit 280.

[0052] Then, the controller 121 controls the heater 217b and the lamp unit 280 by setting the temperature setting value of 927°C of the heater 217b, the temperature ratio of 0.57 of the heater 217b, the temperature rise time of 40 seconds of the lamp unit 280, the power setting value in the temperature rise process of the lamp unit 280 of 74%, and the ramp rate in the temperature rise process of the lamp unit 280 of 10% / second, which are set for the wafer temperature of 800°C obtained from the temperature control table of Fig. 4, and executes the event of step No. 6. 40 seconds after the start of the temperature rise of the lamp unit 280, the controller 121 controls the heater 217b and the lamp unit 280 by setting the power setting value in the process process of the lamp unit 280 of 64% and the ramp rate in the process process of the lamp unit 280 of 0.2% / second, and executes the event of step No. 7. The event of step No. 7 is a step of turning on the high frequency power supply to generate plasma, and a step of stabilizing this plasma before processing the wafer 200 in the next step No. 8.

[0053] Then, when the temperature is stabilized at 800° C., the controller 121 controls the heater 217b and the lamp unit 280 according to the power setting value and the ramp rate value of the lamp unit 280 in the process step of the lamp unit 280 set in step No. 7, and executes the event of step No. 8. The event of step No. 8 is a step for processing the wafer 200.

[0054] That is, the controller 121 is configured to set the set value set for the target temperature corresponding to the wafer temperature in the temperature control table to the temperature set value of the heater 217b, the temperature ratio of the heater 217b, the power set value of the lamp unit 280, and the ramp rate value in the process recipe. This makes it possible to create a process recipe and control the temperature simply by specifying the wafer temperature as the target temperature, thereby reducing setting errors.

[0055] 4 is used, when the wafer temperature when each step of the process recipe is set to 700° C. or less, only the heater control value is set to control only the heater 217b, and when it is higher than 700° C., the lamp control value is set in addition to the heater control value to control the heater 217b and the lamp unit 280. When the wafer temperature when each step is set to 700° C. or less, if the wafer 200 is heated using the lamp unit 280 in addition to the heater 217b, the temperature may rise rapidly, causing warping of the wafer 200 or damage to the wafer 200. Therefore, in the temperature control table, when the wafer temperature when each step is set to 700° C. is higher than 700° C., by controlling to use the setting value of the lamp unit 280 in addition to the setting value of the heater 217b, warping or damage to the wafer 200 due to setting errors can be prevented.

[0056] Also, the lamp unit 280 requires a certain amount of time to heat up after the start of heating until it reaches the target temperature. Therefore, when the wafer temperature at the time of setting each step is higher than 700° C. and the lamp unit 280 is to heat up to the wafer temperature set in the process recipe, the controller 121 sets the setting value for each setting item in the heating step of the lamp unit 280, and when the lamp unit 280 is to be stabilized at the wafer temperature set in the process recipe, the controller 121 sets the setting value for each setting item in the process step of the lamp unit 280 and executes each step.

[0057] Next, a procedure for the recipe editing process S200 performed by the operation unit 601 on the operation screen (also called the editing screen) will be described with reference to FIG.

[0058] The operation unit 601 is configured to execute one of the following events in response to a predetermined screen event: downloading a temperature control table, changing the temperature control table, changing a set value in the temperature control table, changing a temperature control mode set in the temperature control table, and changing a function selection button set in the temperature control table. This allows the user to perform operations while checking the current set value on the operation screen.

[0059] For example, when the temperature control table is OK (S201), the operation unit 601 receives an event (step) that ended with OK, and reloads the temperature control table (S202).

[0060] Then, the operation unit 601 judges whether the loaded temperature control table is OK or not (S203).

[0061] Then, the operation unit 601 searches the temperature control table with the target temperature corresponding to the wafer temperature set in the process recipe, and determines whether there is data in the temperature control table that matches the target temperature corresponding to the wafer temperature set in the process recipe (S204).

[0062] Then, if there is no matching data in the temperature control table, the controller 121 sets at least one of the temperature setting value of the heater 217b, the temperature ratio, the power setting value of the lamp unit 280, and the ramp rate value of the process recipe to 0 (not set) (S205). That is, if the controller 121 cannot extract a target temperature equivalent to the wafer temperature set in the process recipe from the temperature control table, at least one of the temperature setting value of the heater 217b, the temperature ratio of the heater 217b, the power setting value of the lamp unit 280, and the ramp rate value in the process recipe to 0 or not set. Then, the controller 121 ends the recipe editing process (S200). As a result, when creating a process recipe by only specifying the wafer temperature as the target temperature, the setting is awaited by setting 0 or not set for the time being, and setting errors are reduced.

[0063] If there is no matching data in the temperature control table, the controller 121 may search the temperature control table with a target temperature corresponding to a wafer temperature closest to the wafer temperature set in the process recipe, and set the set value set for the target temperature corresponding to the closest wafer temperature to at least one of the temperature set value of the heater 217b, the temperature ratio of the heater 217b, the power set value of the lamp unit 280, and the ramp rate value in the process recipe. This makes it possible to create a process recipe and control the temperature even if the wafer temperature to be the target temperature is not in the temperature control table, thereby reducing setting errors.

[0064] If there is matching data in the temperature control table, the controller 121 sets the set value set for the target temperature corresponding to the wafer temperature in the process recipe to at least one of the temperature set value of the heater 217b, the temperature ratio of the heater 217b, the power set value of the lamp unit 280, and the ramp rate value in the process recipe (S206). This makes it possible to create a process recipe and control the temperature simply by specifying the wafer temperature as the target temperature, thereby reducing setting errors.

[0065] Then, the controller 121 turns on the temperature function selection flag when the wafer temperature set in the process recipe is equal to or higher than the predetermined temperature (S207). By turning on the temperature function selection flag, the operation unit 601 can turn on the lamp function selection flag. This makes it possible to set the lamp control value when the temperature function selection flag is on, and the irradiation timing of the lamp unit 280 can be controlled. Then, by turning on the lamp function selection flag, the lamp control value including the power setting value and the lamp rate value of the lamp unit 280 is set. This makes it possible to set the lamp control value when the wafer temperature is equal to or higher than the predetermined temperature, and the lamp unit 280 can be controlled at the appropriate timing.

[0066] Then, it is determined whether the temperature control mode is the wafer temperature setting mode (S208).

[0067] Then, when the temperature control mode is the wafer temperature setting mode, the lamp function selection is turned on, and the control mode is turned on, so that control is possible in the wafer temperature setting control mode (S209).

[0068] If the temperature control mode is not the wafer temperature setting mode, the lamp function selection is turned off to turn off the control mode (S210).

[0069] Next, a method for calculating data in the temperature control table will be described with reference to Fig. 9. The method for calculating data in the temperature control table includes one-point detection and two-point detection.

[0070] 9, in the one-point detection, when the wafer temperature in the process recipe is set to 600° C., the controller 121 acquires the temperature setting value 609° C. and the temperature ratio 0.440 of the heater 217b corresponding to the wafer temperature of 600° C. from the temperature control table. Also, when the target temperature equivalent to the wafer temperature set in the process recipe is not found in the temperature control table, an error is generated.

[0071] 9, in the two-point detection, when the wafer temperature in the process recipe is set to 600° C., the controller 121 acquires the temperature setting value 609° C. and the temperature ratio 0.440 of the heater 217b corresponding to the wafer temperature 600° C. from the temperature control table. When the target temperature corresponding to the wafer temperature set in the process recipe is not present in the temperature control table, the controller 121 determines the wafer temperatures at two points in the temperature control table whose range includes the target temperature corresponding to the wafer temperature set in the process recipe. Specifically, when the wafer temperature in the process recipe is set to 630° C., the controller 121 detects wafer temperatures of 620° C. and 640° C. from the temperature control table and determines the two wafer temperatures of 620° C. and 640° C.

[0072] Then, a temperature setting value of 628.5° C. for heater 217b is calculated using a proportional equation based on a temperature setting value of 618° C. for heater 217b corresponding to a wafer temperature of 620° C. in the temperature control table, and a temperature setting value of 639° C. for heater 217b corresponding to a wafer temperature of 640° C. In addition, a temperature ratio of 0.495 is calculated using a proportional equation based on a temperature ratio of 0.500 for heater 217b corresponding to a wafer temperature of 620° C. and a temperature ratio of 0.490 for heater 217b corresponding to a wafer temperature of 640° C.

[0073] That is, when the target temperature corresponding to the wafer temperature set in the process recipe is not present in the temperature control table, the controller 121 determines two wafer temperatures in the temperature control table whose range includes the target temperature corresponding to the wafer temperature set in the process recipe, and calculates and sets the set values ​​set for the determined two target temperatures corresponding to the wafer temperatures in the process recipe by proportional calculation based on the set values ​​set for the target temperatures corresponding to the two wafer temperatures for at least one of the temperature set value of the heater 217b, the temperature ratio of the heater 217b, the power set value of the lamp unit 280, and the ramp rate value. As a result, even if the wafer temperature to be the target temperature is not present in the temperature control table, the process recipe can be created to control the temperature, and setting errors are reduced. In addition, since a predetermined temperature control table can be searched, it is extremely rare that an editing error occurs, making editing impossible and making it impossible to create a process recipe. Therefore, it is possible to suppress a decrease in the device operating rate.

[0074] In the above embodiment, the temperature control table has the setting values ​​for the heater 217b and the lamp unit 280, but the table may also include setting values ​​for temperature control items such as a high frequency power source, a microwave unit, a cooling unit, etc. This makes it possible to perform temperature control using a plurality of temperature control items.

[0075] In the above embodiment, the lamp control value in the lamp unit 280 has a first control value, which is a control value when increasing the wafer temperature set in the process recipe, and a second control value, which is a control value when stabilizing the wafer temperature at the temperature set in the process recipe, but the present invention is not limited to this, and only the second control value may be used. In this case, the controller 121 is configured to be able to set the second control value continuously to the temperature increase step and the substrate processing step (also called the process step) among the multiple steps. This allows the heater 217b and the lamp unit 280 to control the temperature of the wafer 200, and the wafer 200 can be stabilized at a desired temperature and processed.

[0076] In the above embodiment, a configuration is described in which a temperature control table is used that can set the set value of the heater 217b and the set value of the lamp unit 280 to the target temperature of the wafer, but the present invention is not limited to this. A temperature control table including a first temperature control table that can set the set value of the heater 217b and the set value of the lamp unit 280 to the target temperature of the wafer, and a second temperature control table that can set the set value of the lamp unit 280 to the target temperature of the wafer may be used. In this case, if the wafer temperature set in the process recipe is lower than a predetermined temperature, the controller 121 searches the first temperature control table, and sets the set value set for the target temperature corresponding to the wafer temperature in the first temperature control table to at least one of the temperature set value of the heater 217b and the temperature ratio of the heater 217b in the process recipe. Then, if the wafer temperature set in the process recipe is equal to or higher than a predetermined temperature, the first temperature control table and the second temperature control table are searched, and the set value set for the target temperature corresponding to the wafer temperature in the first temperature control table is set to at least one of the temperature set value of heater 217b and the temperature ratio of heater 217b in the process recipe, and the set value set for the target temperature corresponding to the wafer temperature in the second temperature control table is set to at least one of the power set value and the ramp rate value of lamp unit 280 in the process recipe. Even in this case, a process recipe can be created and temperature control can be performed simply by specifying the wafer temperature as the target temperature, reducing setting errors.

[0077] Also, it is possible to use a temperature control table including a first temperature control table capable of setting a set value of heater 217b that heats the wafer, and a second temperature control table capable of setting a set value of heater 217b and a set value of lamp unit 280. Even in this case, a process recipe can be created and temperature control can be performed simply by specifying the wafer temperature as a target temperature, thereby reducing setting errors.

[0078] In this case, if the wafer temperature set in the process recipe is less than a predetermined temperature, the controller 121 selects the first temperature control table, and sets the setting value set for the target temperature corresponding to the substrate temperature in the first temperature control table to at least one of the heater temperature setting value and the heater temperature ratio in the process recipe.

[0079] Furthermore, if the wafer temperature set in the process recipe is equal to or higher than a predetermined temperature, the controller 121 selects the second temperature control table, and sets the setting value set for the target temperature corresponding to the wafer temperature in the second temperature control table to at least one of the temperature setting value of the heater 217b, the temperature ratio of the heater 217b, the power setting value of the lamp unit 280, and the ramp rate value in the process recipe.

[0080] The substrate processing apparatus 10 according to the embodiment of the present disclosure can be applied not only to a semiconductor manufacturing apparatus for manufacturing semiconductors, but also to an apparatus for processing glass substrates such as an LCD device, etc. Needless to say, the substrate processing apparatus can also be applied to various substrate processing apparatuses such as an exposure apparatus, a lithography apparatus, a coating apparatus, and a processing apparatus using plasma.

[0081] Although various typical embodiments of the present disclosure have been described above, the present disclosure is not limited to those embodiments and can be used in appropriate combination. [Explanation of symbols]

[0082] 100 Substrate processing apparatus 121 Controller (control unit) 200 wafers (substrates)

Claims

1. a storage unit that stores at least a temperature control table in which a set value of a heater for heating a substrate and a set value of a lamp for heating the substrate are set with respect to a target temperature of the substrate, and a process recipe consisting of a plurality of steps for processing the substrate; A control unit capable of controlling execution of the process recipe; Equipped with the control unit searches the temperature control table for a target temperature corresponding to a substrate temperature set in the process recipe; A processing apparatus that is controllable to set a set value for a target temperature corresponding to the substrate temperature to at least one of a temperature set value of the heater in the process recipe, a temperature ratio of the heater which is a ratio of the temperature of the heater to the substrate temperature, a power set value of the lamp, and a ramp rate value of the lamp.

2. 2. The processing apparatus according to claim 1, wherein the control unit is capable of controlling so as to set at least one of the heater temperature setting value, the heater temperature ratio, the lamp power setting value, and the lamp ramp rate value in the process recipe to 0 or to be unset when a target temperature corresponding to the substrate temperature cannot be extracted from the temperature control table.

3. When the target temperature corresponding to the substrate temperature is not found in the temperature control table, the control unit searching the temperature control table for a target temperature corresponding to a substrate temperature that is closest to the substrate temperature; 2. The processing apparatus according to claim 1, wherein the processing apparatus is controllable so that a set value set for a target temperature corresponding to a substrate temperature closest to the substrate temperature is set to at least one of a temperature set value of the heater, a temperature ratio of the heater, a power set value of the lamp, and a ramp rate value of the lamp in the process recipe.

4. When the target temperature corresponding to the substrate temperature is not found in the temperature control table, the control unit Determining two substrate temperatures in the temperature control table that include a range of a target temperature corresponding to the substrate temperature; 2. The processing apparatus according to claim 1, wherein the processing apparatus is controllable so that set values ​​set for the target temperatures corresponding to the two substrate temperatures are proportionally calculated based on set values ​​set for the target temperatures corresponding to the two substrate temperatures for at least one of the heater temperature set value, the heater temperature ratio, the lamp power set value, and the lamp ramp rate value in the process recipe.

5. 2. The processing apparatus according to claim 1, wherein the control unit is capable of controlling, when a substrate temperature set in the process recipe is equal to or higher than a predetermined temperature, the control unit to turn on a temperature function selection flag and set lamp control values ​​including at least a power setting value of the lamp and a ramp rate value of the lamp.

6. 6. The processing apparatus according to claim 5, wherein the control unit is capable of controlling so that a lamp function selection flag can be turned on when the temperature function selection flag is on.

7. The lamp control value is a first control value which is a control value for increasing the temperature of the substrate to a temperature set in the process recipe; a second control value which is a control value when stabilizing the substrate temperature at a temperature set in the process recipe; 6. The processing apparatus of claim 5, further comprising:

8. 2. The processing apparatus according to claim 1, wherein the temperature control table includes set values ​​for at least one of a heater unit, a lamp unit, a high frequency power supply, a microwave unit, and a cooling unit.

9. Further, lamp control values ​​including a power setting value of the lamp and a ramp rate value of the lamp are a first control value which is a control value for increasing the temperature of the substrate to a temperature set in the process recipe; a second control value which is a control value when stabilizing the substrate temperature at a temperature set in the process recipe; The processing device according to claim 1 , wherein the control unit is capable of performing control so that the first control value and the second control value can be set for one step of the plurality of steps.

10. Further, lamp control values ​​including a power setting value of the lamp and a ramp rate value of the lamp are a second control value which is a control value when stabilizing the substrate temperature at a temperature set in the process recipe; The processing apparatus according to claim 1 , wherein the control unit is capable of controlling so that the second control value can be set successively to a heating step and a substrate processing step among the plurality of steps.

11. 2. The processing apparatus according to claim 1, wherein the control unit is capable of controlling so as to set a set value set for a target temperature corresponding to the substrate temperature in the temperature control table to each of a temperature set value of the heater, a temperature ratio of the heater, a power set value of the lamp, and a ramp rate value of the lamp in the process recipe.

12. a storage unit that stores at least a temperature control table including a first temperature control table that can set a setting value of a heater that heats a substrate and a setting value of a lamp that heats the substrate with respect to a target temperature of the substrate, and a second temperature control table that can set a setting value of the lamp with respect to a target temperature of the substrate, and a process recipe that is composed of a plurality of steps for processing the substrate; a control unit capable of controlling execution of the process recipe, The control unit is if the substrate temperature set in the process recipe is less than a predetermined temperature, searching the first temperature control table, and setting a set value set for a target temperature corresponding to the substrate temperature in the first temperature control table to at least one of a heater temperature set value in the process recipe and a heater temperature ratio which is a ratio of the heater temperature to the substrate temperature; a controllable temperature control table for searching the first temperature control table and the second temperature control table, and setting a set value set for a target temperature corresponding to the substrate temperature in the first temperature control table to at least one of a temperature set value of the heater and a temperature ratio of the heater in the process recipe, and setting a set value set for a target temperature corresponding to the substrate temperature in the second temperature control table to at least one of a power set value of the lamp and a ramp rate value of the lamp in the process recipe, if the substrate temperature set in the process recipe is equal to or higher than a predetermined temperature; Processing unit.

13. a storage unit that stores at least a temperature control table including a first temperature control table capable of setting a setting value of a heater that heats a substrate, and a second temperature control table capable of setting a setting value of the heater and a setting value of a lamp that heats the substrate, and a process recipe consisting of a plurality of steps for processing a substrate; a control unit capable of controlling execution of the process recipe, The control unit is if the substrate temperature set in the process recipe is less than a predetermined temperature, the first temperature control table is selected, and a set value set for a target temperature corresponding to the substrate temperature in the first temperature control table is set to at least one of a heater temperature set value in the process recipe and a heater temperature ratio which is a ratio of the heater temperature to the substrate temperature; a controllable temperature control table for selecting the second temperature control table when the substrate temperature set in the process recipe is equal to or higher than a predetermined temperature, and setting a set value set for a target temperature corresponding to the substrate temperature in the second temperature control table to at least one of a temperature set value of the heater, a temperature ratio of the heater, a power set value of the lamp, and a ramp rate value of the lamp in the process recipe; Processing unit.

14. Further, an operation unit having an editing screen for editing the process recipe is provided, 2. The processing apparatus according to claim 1, wherein the operation unit is configured to execute one of the following events in response to a predetermined screen event: downloading the temperature control table, changing the temperature control table, changing a setting value in the temperature control table, changing a temperature control mode set in the temperature control table, or changing a function selection button set in the temperature control table.

15. A program executed in a substrate processing apparatus including a control unit for setting a plurality of temperature control items to create a recipe and for processing a substrate by executing the created recipe, a step of storing at least a temperature control table in which a set value of a heater for heating the substrate and a set value of a lamp for heating the substrate are set with respect to a target temperature of the substrate, and a process recipe for processing the substrate; searching the temperature control table for a target temperature corresponding to a substrate temperature set in the process recipe; a step of setting a set value for a target temperature corresponding to the substrate temperature to at least one of a temperature set value of the heater in the process recipe, a temperature ratio of the heater which is a ratio of the temperature of the heater to the substrate temperature, a power set value of the lamp, and a ramp rate value of the lamp; executing the process recipe; A program for causing a computer to execute the above-mentioned substrate processing apparatus.

16. A method of manufacturing a semiconductor device for processing a substrate by setting a plurality of temperature control items to create a recipe and executing the created recipe, comprising: storing at least a temperature control table in which a set value of a heater for heating the substrate and a set value of a lamp for heating the substrate are set with respect to a target temperature of the substrate, and a process recipe for processing the substrate; searching the temperature control table for a target temperature corresponding to a substrate temperature set in the process recipe; setting a set value for a target temperature corresponding to the substrate temperature to at least one of a temperature set value of the heater in the process recipe, a temperature ratio of the heater which is a ratio of the temperature of the heater to the substrate temperature, a power set value of the lamp, and a ramp rate value of the lamp; executing the process recipe; A method for manufacturing a semiconductor device having the above structure.

Images