Method for removing devices using epitaxial lateral overgrowth techniques - Patents.com

Abstract

Epitaxial lateral overgrowth (ELO) of III-nitride layers is used to cover a growth-limiting mask deposited on a substrate, and the III-nitride ELO layers are grown with a low V / III ratio of less than 500, resulting in fast lateral growth compared to slow vertical growth. The III-nitride ELO layers are grown at a V / III ratio of less than 1×10 18 cm -3 The III-nitride ELO layer contains a large amount of impurities, exceeding 1000 kJ / cm, which results in a III-nitride ELO layer with a color layer. The color layer absorbs light from the active region due to the large amount of impurities. When the bar of device layers is removed from the substrate, at least a portion of the color layer is removed from the bar. Elimination of the color layer reduces absorption losses, which improves the device performance.

Description

[Technical field]

[0001] (CROSS REFERENCE TO RELATED APPLICATIONS) This application claims the benefit under 35 USC Section 119(e) of the following co-pending and commonly assigned applications:

[0002] U.S. Provisional Application No. 63 / 011,698, filed April 17, 2020, by Takeshi Kamikawa, Masahiro Araki, and Srinivas Gandrothula, entitled “METHOD FOR REMOVING A DEVICE USING AN EPITAXIAL LATERAL OVERGROWTH TECHNIQUE” (Attorney Docket No. G&C 30794.0762USP1 (UC 2020-706-1)), which application is incorporated herein by reference.

[0003] This application is related to the following co-pending and commonly assigned applications:

[0004] The application, entitled "METHOD OF REMOVING A SUBSTRATE," filed May 5, 2017 by Takeshi Kamikawa, Srinivas Gandrothula, Hongjian Li, and Daniel A. Cohen, claims the benefit under 35 USC Section 119(e) of co-pending and commonly assigned U.S. Provisional Patent Application No. 62 / 502,205 (Attorney Docket No. 30794.0653USP1 (UC 2017-621-1)), filed May 7, 2018 by Takeshi Kamikawa, Srinivas Gandrothula, Hongjian Li, and Daniel A. Cohen, entitled "METHOD OF REMOVING A SUBSTRATE," No. 16 / 608,071, filed Oct. 24, 2019, by Takeshi Kamikawa, Srinivas Gandrothula, Hongjian Li, and Daniel A. Cohen, entitled "METHOD OF REMOVING A SUBSTRATE," Attorney Docket No. 30794.0653USWO(UC 2017-621-1), which claims the benefit under 35 USC Section 365(c) of co-pending and commonly assigned PCT International Patent Application No. PCT / US18 / 31393, entitled "METHOD OF REMOVING A SUBSTRATE," Attorney Docket No. 30794.0653WOU1(UC 2017-621-2).

[0005] The application was filed on September 15, 2017 by Takeshi Kamikawa, Srinivas Gandrothula, and Hongjian Li, entitled "METHOD OF REMOVING A SUBSTRATE WITH A CLEAVING TECHNIQUE," and claims the benefit under 35 USC Section 119(e) of co-pending and commonly assigned U.S. Provisional Patent Application No. 62 / 559,378 (Attorney Docket No. 30794.0659USP1 (UC 2018-086-1)). The application was filed on September 17, 2018 by Takeshi Kamikawa, Srinivas Gandrothula, and Hongjian Li, entitled "METHOD OF REMOVING A SUBSTRATE WITH A CLEAVING TECHNIQUE," and claims the benefit under 35 USC Section 119(e) of co-pending and commonly assigned U.S. Provisional Patent Application No. 62 / 559,378 (Attorney Docket No. 30794.0659USP1 (UC 2018-086-1)). No. 16 / 642,298, filed on February 20, 2020, by Takeshi Kamikawa, Srinivas Gandrothula, and Hongjian Li, entitled "METHOD OF REMOVING A SUBSTRATE WITH A CLEAVING TECHNIQUE," Attorney Docket No. 30794.0659USWO(UC 2018-086-2), which claims the benefit under 35 USC Section 365(c) of co-pending and commonly assigned PCT International Patent Application No. PCT / US18 / 51375, entitled "METHOD OF REMOVING A SUBSTRATE WITH A CLEAVING TECHNIQUE."

[0006] The application claims the benefit under 35 USC Section 119(e) of co-pending and commonly assigned U.S. Provisional Patent Application No. 62 / 650,487 (Attorney Docket No. G&C 30794.0680USP1 (UC 2018-427-1) filed on March 30, 2018 by Takeshi Kamikawa, Srinivas Gandrothula, and Hongjian Li, entitled “METHOD OF FABRICATING NONPOLAR AND SEMIPOLAR DEVICES BY USING LATERAL OVERGROWTH,” which is hereby incorporated by reference in its entirety. No. 16 / 978,493, filed September 4, 2020, by Takeshi Kamikawa, Srinivas Gandrothula, and Hongjian Li, entitled "METHOD OF FABRICATING NONPOLAR AND SEMIPOLAR DEVICES USING EPITAXIAL LATERAL OVERGROWTH," Attorney Docket No. 30794.0680USWO(UC 2018-427-2), which claims the benefit under 35 USC Section 365(c) of co-pending and commonly assigned PCT International Patent Application No. PCT / US19 / 25187, entitled "METHOD OF FABRICATING NONPOLAR AND SEMIPOLAR DEVICES USING EPITAXIAL LATERAL OVERGROWTH," Attorney Docket No. 30794.0680USWO(UC 2018-427-2). No. 2018-427-2).

[0007] The application claims the benefit under 35 USC Section 119(e) of co-pending and commonly assigned U.S. Provisional Application No. 62 / 672,913 (Attorney Docket No. G&C 30794.0681USP1 (UC 2018-605-1)), filed May 17, 2018 by Takeshi Kamikawa and Srinivas Gandrothula and entitled “METHOD FOR DIVIDING A BAR OF ONE OR MORE DEVICES.” and U.S. Utility Patent Application No. 17 / 048,383, filed on October 16, 2020 by Takeshi Kamikawa and Srinivas Gandrothula, entitled "METHOD FOR DIVIDING A BAR OF ONE OR MORE DEVICES," Attorney Docket No. 30794.0681USWO(UC 2018-605-2), which claims the benefit under 35 U.S.C. Section 365(c) of co-pending and commonly assigned PCT International Patent Application No. PCT / US19 / 32936, entitled "METHOD FOR DIVIDING A BAR OF ONE OR MORE DEVICES."

[0008] The application, filed May 30, 2018 by Srinivas Gandrothula and Takeshi Kamikawa, entitled “METHOD OF REMOVING SEMICONDUCTING LAYERS FROM A SEMICONDUCTING SUBSTRATE”, claims the benefit under 35 USC Section 119(e) of co-pending and commonly assigned U.S. Provisional Application No. 62 / 677,833 (Attorney Docket No. G&C 30794.0682USP1 (UC 2018-614-1)), filed May 30, 2019 by Srinivas Gandrothula and Takeshi Kamikawa, entitled “METHOD OF REMOVING SEMICONDUCTING LAYERS FROM A SEMICONDUCTING SUBSTRATE”. and U.S. Utility Patent Application No. 17 / 049,156, filed on October 20, 2020 by Srinivas Gandrothula and Takeshi Kamikawa, entitled "METHOD OF REMOVING SEMICONDUCTING LAYERS FROM A SEMICONDUCTING SUBSTRATE" (Attorney Docket No. 30794.0682USWO(UC 2018-614-2)), which claims the benefit under 35 U.S.C. Section 365(c) of co-pending and commonly assigned PCT International Patent Application No. PCT / US19 / 34686, entitled "METHOD OF REMOVING SEMICONDUCTING LAYERS FROM A SEMICONDUCTING SUBSTRATE."

[0009] The application claims the benefit under 35 USC Section 119(e) of co-pending and commonly assigned U.S. Provisional Application No. 62 / 753,225 (Attorney Docket No. G&C 30794.0693USP1 (UC 2019-166-1)), filed on October 31, 2018 by Takeshi Kamikawa and Srinivas Gandrothula and entitled "METHOD OF OBTAINING A SMOOTH SURFACE WITH EPITAXIAL LATERAL OVERGROWTH," and is hereby incorporated by reference in its entirety. No. 17 / 285,827, filed April 15, 2021, by Takeshi Kamikawa and Srinivas Gandrothula, entitled "METHOD OF OBTAINING A SMOOTH SURFACE WITH EPITAXIAL LATERAL OVERGROWTH," Attorney Docket No. 30794.0693USWO(UC 2019-166-2), which claims the benefit under 35 USC Section 365(c) of co-pending and commonly assigned PCT International Patent Application No. PCT / US19 / 59086, entitled "METHOD OF OBTAINING A SMOOTH SURFACE WITH EPITAXIAL LATERAL OVERGROWTH."

[0010] The application claims the benefit under 35 USC Section 119(e) of U.S. Provisional Application No. 62 / 793,253 (Attorney Docket No. G&C 30794.0713USP1 (UC 2019-398-1)), filed on January 16, 2020 by Takeshi Kamikawa, Srinivas Gandrothula, and Masahiro Araki, entitled “METHOD FOR REMOVAL OF DEVICES USING A TRENCH,” and co-pending and commonly assigned U.S. Provisional Application No. PCT International Patent Application No. PCT / US20 / 13934 (Attorney Docket No. 30794.0713WOU1 (UC 2019-398-2)), entitled “TRENCH.”

[0011] The application was filed on March 2, 2020 by Takeshi Kamikawa and Srinivas Gandrothula, entitled "METHOD FOR FLATTENING A SURFACE ON AN EPITAXIAL LATERAL GROWTH LAYER," which claims the benefit under 35 U.S.C. Section 119(e) of co-pending and commonly assigned U.S. Provisional Application No. 62 / 812,453 (Attorney Docket No. G&C 30794.0720USP1 (UC 2019-409-1)), entitled "METHOD FOR FLATTENING A SURFACE ON AN EPITAXIAL LATERAL GROWTH LAYER." PCT International Patent Application No. PCT / US20 / 20647 (Attorney Docket No. 30794.0720WOU1 (UC 2019-409-2)), entitled "LAYER."

[0012] The application was filed on September 17, 2020 by Takeshi Kamikawa, Srinivas Gandrothula, and Masahiro Araki, entitled "METHOD FOR REMOVING A BAR OF ONE OR MORE DEVICES USING SUPPORTING PLATES," which claims the benefit under 35 USC Section 119(e) of co-pending and commonly assigned U.S. Provisional Application No. 62 / 817,216 (Attorney Docket No. G&C 30794.0724USP1 (UC 2019-416-1)), filed on March 12, 2019 by Takeshi Kamikawa, Srinivas Gandrothula, and Masahiro Araki, entitled "METHOD FOR REMOVING A BAR OF ONE OR MORE DEVICES USING SUPPORTING PLATES." PCT International Patent Application No. PCT / US20 / 22430 (Attorney Docket No. 30794.0724WOU1 (UC 2019-416-2)), entitled “COMPANYING LIGHT EMISSIONS AND METHODS OF USE IN COMPONENTS WITH SUCH ARTICLE.”

[0013] The entirety of that application is incorporated herein by reference.

[0014] BACKGROUND OF THEINVENTION 1. Field of the invention The present invention relates to a method for removing devices from a substrate using epitaxial lateral overgrowth (ELO) techniques. [Background technology]

[0015] 2. Description of Related Technology Many researchers have used ELO techniques with III-nitride layers and heterosubstrates such as sapphire, silicon carbide, etc., to reduce defect density in the III-nitride layers. The present invention uses ELO techniques to remove devices made of III-nitride layers from the substrate and to reduce defect density.

[0016] One ELO technique uses a growth-limiting mask with one or more open areas. The lateral growth of the III-nitride layer starting from the open areas of the growth-limiting mask is very slow. Generally, the period of the open areas of the growth-limiting mask is set to be about 10 μm to 20 μm to obtain a flat layer on the heterosubstrate by burying the growth-limiting mask. However, a narrow period containing coalescence regions results in the device fabricated by the ELO technique. Therefore, due to the problem of the narrow period, the ELO technique has been avoided when producing devices.

[0017] Thus, there is a need in the art for improved methods of using ELO to create III-nitride layers with broad periodicity across the aperture area. In particular, there is a need for such methods whereby devices are grown with very low defect densities and / or do not contain coalescence regions. To achieve these needs, the present invention uses high rate lateral growth under low V / III ratio growth conditions. Summary of the Invention [Means for solving the problem]

[0018] SUMMARY OF THEINVENTION To overcome the limitations of the prior art discussed above, as well as other limitations that will become apparent upon reading and understanding of this specification, the present invention discloses methods for achieving fast lateral growth (as compared to slower vertical growth) of III-nitride layers using ELO techniques and utilizing ELO techniques to fabricate devices.

[0019] The above trials have been conducted to obtain growth conditions for fast lateral growth of III-nitride layers using the ELO technique. In the present invention, it has been found that a low V / III ratio, for example, <500, can result in fast lateral growth of III-nitride layers using the ELO technique.

[0020] However, it has also been found that there is a trade-off between the impurity concentration in the III-nitride ELO layer and the rate of lateral growth. Lateral growth at higher rates, e.g., 1×10 18 cm -3 This would result in a higher concentration of impurities in the ELO layer, exceeding the V / III ratio. Specifically, at low V / III ratios, the migration length of gallium (Ga) adatoms on the gallium nitride (GaN) layer is longer than that under normal growth conditions. This favors the edge growth of the ELO layer, leading to an increased rate of lateral growth.

[0021] However, Ga adatoms on the GaN layer are more likely to bond with impurities such as carbon (C), oxygen (O), and silicon (Si) due to the lack of opportunity for bonding to nitrogen (N) atoms. The presence of a highly impurity-doped layer causes absorption and scattering of light generated in the active region, which leads to deterioration of device characteristics. Hereinafter, the highly impurity-doped layer fabricated by the ELO technique is called a "colored layer" because the layer is brown in color due to the high impurity doping.

[0022] Rapid lateral growth has several advantages for devices and device processing, including the following: 1. Rapid lateral growth is important in reducing device costs due to shorter growth times in metal-organic chemical vapor deposition (MOVCD) reactors and reduced waste volumes of metal-organic raw materials. 2. Fast lateral growth has the effect of suppressing the rate of vertical growth: the aspect ratio between the layer width and height of the ELO layer can be reduced, which allows for thinner devices. Thin devices are preferred for micro-sized light emitting diodes (microLEDs or μLEDs) and vertical cavity surface emitting lasers (VCSELs). For example, in the case of microLEDs, thin devices can reduce the amount of light from the side facets of the device due to the reduction in the area of ​​the side facets. The suppression of light extraction from the side facets of the device can reduce crosstalk between adjacent devices, such as microLEDs, used in displays. In the case of VCSELs, thin devices can have short cavity lengths, which leads to higher gain devices. 3. In the case of slow lateral growth, there may be fast vertical growth, which sometimes enhances the height variation between ELO layers. Such variation is undesirable when bonding the ELO layers to remove them from the substrate. Suppressing the height variation of the ELO layers by increasing the lateral growth is important to obtain a high yield when bonding these layers. Also, the higher the height of the ELO layers, the slower the rate of lateral growth becomes, since lateral growth requires more material supply. Therefore, the height of the ELO layers should be as low as possible. 4. In order to obtain a large-sized chip that does not contain a coalescence region, the period of the growth-limiting mask is set as wide as possible. For example, when the width of the period of the growth-limiting mask is 20 μm to 30 μm, it is very difficult to cover the growth-limiting mask with the ELO layer due to the slow lateral growth. In the present invention, the fast lateral growth can cover the width of the growth-limiting mask with the ELO layer even when the width of the period of the growth-limiting mask is more than 50 μm.

[0023] To achieve these advantages, the present invention is able to eliminate the trade-offs discussed above.

[0024] The present invention proposes a method for growing and fabricating many different types of devices, such as LEDs, micro-LEDs, VCSELs, laser diodes (LDs), photodetectors (PDs), and power devices, by utilizing fast lateral growth and avoiding light absorption from the active region. Specifically, the present invention eliminates color layers from the devices and removes the devices from the substrate in an easy, fast, and high-yield manner. The present invention provides, for example, the following items. (Item 1) 1. A method comprising: growing one or more color layers and a device layer on a substrate using a growth limiting mask; forming a bar comprising the color layer and the device layer; removing the bar from the substrate; removing at least a portion of at least one of said color layers from said bar; removing one or more devices from a substrate using an epitaxial lateral overgrowth (ELO) technique by (Item 2) 2. The method according to claim 1, wherein the substrate is a III-nitride based substrate, a foreign substrate, or a heterosubstrate. (Item 3) 2. The method of claim 1, wherein the color layer has a thickness of less than about 18 μm. (Item 4) 2. The method of claim 1, wherein the color layer is grown directly on the growth limiting mask. (Item 5) 2. The method of claim 1, wherein adjacent ones of the color layers are merged with one another. (Item 6) 6. The method of claim 5, wherein at least one of the color layers comprises a void. (Item 7) 2. The method of claim 1, wherein growth of the colored layers is stopped before adjacent ones of the colored layers coalesce with one another. (Item 8) A device, which is processed by the method described in item 1. (Item 9) 1. A method comprising: performing epitaxial lateral overgrowth (ELO) of a III-nitride layer, covering a growth limiting mask deposited on the substrate; the III-nitride layer is grown with a low V / III ratio of less than 500, resulting in fast lateral growth compared to slower vertical growth; The III-nitride layer is 1×10 18 cm -3 containing a large amount of impurities exceeding the colored layer absorbs light from the active region due to the large amount of impurities; When a bar of device layers grown on the III-nitride layers is removed from the substrate, at least a portion of the color layer is removed, thereby reducing optical absorption losses. (Item 10) 1. A method comprising: using epitaxial lateral overgrowth (ELO) techniques to achieve a faster lateral growth of one or more III-nitride layers compared to a slower vertical growth; a high rate lateral growth of the III-nitride layer results from low V / III ratio growth conditions of less than 500; The high rate lateral growth of the III-nitride layers is a colored layer. 18 cm -3 3. The method of claim 2, wherein the impurity concentration is greater than or equal to 100%. (Item 11) Item 11. The method of item 10, wherein the higher concentration of impurities in the III-nitride layer causes absorption and scattering of light generated in an active region. (Item 12) Item 11. The method of item 10, wherein the high rate lateral growth reduces the cost of the device due to reduced growth time and raw materials used. (Item 13) Item 11. The method of item 10, wherein the high rate lateral growth suppresses vertical growth, which reduces the aspect ratio between the width and height of the III-nitride layer, thereby enabling thinner devices. (Item 14) Item 11. The method of item 10, wherein the high rate lateral growth reduces the side facet area and therefore reduces the amount of light extracted from the side facet area. (Item 15) Item 11. The method of item 10, wherein the high rate lateral growth reduces height variations of the III-nitride layer. (Item 16) Item 11. The method of item 10, wherein the fast lateral growth allows for a wider period between open areas in a growth limiting mask deposited on a substrate without coalescence regions. [Brief description of the drawings]

[0025] Reference is now made to the drawings, in which like reference numbers represent corresponding parts throughout:

[0026] [Figure 1a] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1b] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1c]Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1d] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1e] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1f] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1g] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1h] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1i] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1j]Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1k] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1l] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1m] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1n] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1o] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 1p] Figures 1(a), 1(b), 1(c), 1(d), 1(e), 1(f), 1(g), 1(h), 1(i), 1(j), 1(k), 1(l), 1(m), 1(n), 1(o), and 1(p) are schematic diagrams of device structures fabricated in accordance with the present invention. [Figure 2a]2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2b] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2c] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2d] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2e] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2f] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2g]2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2h] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2i] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2j] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2k] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2l] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2m]2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2n] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2o] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2p] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 2q] 2(a), 2(b), 2(c), 2(d), 2(e), 2(f), 2(g), 2(h), 2(i), 2(j), 2(k), 2(l), 2(m), 2(n), 2(o), 2(p), and 2(q) are schematic diagrams of device structures fabricated in accordance with the present invention that are variants of the schematic diagram of FIG. [Figure 3a] 3(a), 3(b), 3(c), 3(d), 3(e), 3(f), and 3(g) are schematic diagrams of device structures, fabricated in accordance with the present invention, which are variants of the schematic diagrams of FIGS. 1 and 2. [Figure 3b] 3(a), 3(b), 3(c), 3(d), 3(e), 3(f), and 3(g) are schematic diagrams of device structures, fabricated in accordance with the present invention, which are variants of the schematic diagrams of FIGS. 1 and 2. [Figure 3c]3(a), 3(b), 3(c), 3(d), 3(e), 3(f), and 3(g) are schematic diagrams of device structures, fabricated in accordance with the present invention, which are variants of the schematic diagrams of FIGS. 1 and 2. [Figure 3d] 3(a), 3(b), 3(c), 3(d), 3(e), 3(f), and 3(g) are schematic diagrams of device structures, fabricated in accordance with the present invention, which are variants of the schematic diagrams of FIGS. 1 and 2. [Figure 3e] 3(a), 3(b), 3(c), 3(d), 3(e), 3(f), and 3(g) are schematic diagrams of device structures, fabricated in accordance with the present invention, which are variants of the schematic diagrams of FIGS. 1 and 2. [Figure 3f] 3(a), 3(b), 3(c), 3(d), 3(e), 3(f), and 3(g) are schematic diagrams of device structures, fabricated in accordance with the present invention, which are variants of the schematic diagrams of FIGS. 1 and 2. [Figure 3g] 3(a), 3(b), 3(c), 3(d), 3(e), 3(f), and 3(g) are schematic diagrams of device structures, fabricated in accordance with the present invention, which are variants of the schematic diagrams of FIGS. 1 and 2. [Figure 4a] 4(a), 4(b), and 4(c) are schematic diagrams of device structures, fabricated in accordance with the present invention, which are variants of the schematic diagrams of FIGS. [Figure 4b] 4(a), 4(b), and 4(c) are schematic diagrams of device structures, fabricated in accordance with the present invention, which are variants of the schematic diagrams of FIGS. [Figure 4c] 4(a), 4(b), and 4(c) are schematic diagrams of device structures, fabricated in accordance with the present invention, which are variants of the schematic diagrams of FIGS. [Diagram 5] FIG. 5 is a scanning electron microscope (SEM) image showing cracks that form without voids when the growth-limiting mask is buried by the device layer. [Figure 6] FIG. 6 is a graph of secondary ion mass spectrometry (SIMS) profiling data for the colored layer showing C, O, and Si concentrations (atoms / cm3) versus depth (μm). [Figure 7] FIG. 7 is a schematic diagram of a growth limiting mask. [Figure 8-1] 8(a), 8(b), and 8(c) are SEM images of the growth limiting mask, the III-nitride ELO layer, the color layer, and the planarization layer. [Figure 8-2] 8(a), 8(b), and 8(c) are SEM images of the growth limiting mask, the III-nitride ELO layer, the color layer, and the planarization layer. [Figure 9a] 9(a) and 9(b) are schematic diagrams of device packaging fabricated in accordance with the present invention. [Figure 9b] 9(a) and 9(b) are schematic diagrams of device packaging fabricated in accordance with the present invention. [Figure 10] FIG. 10 is a flow chart illustrating a method for removing a device from a substrate using ELO techniques. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] Detailed Description of the Invention In the following description of the preferred embodiment, reference is made to specific embodiments in which the present invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the present invention.

[0028] (Overview) The following describes the method proposed by the present invention.

[0029] Method 1 The method comprises: 1-1. On a GaN substrate, as shown in Fig. 1(a)-1(p), or 1-2.As shown in Figure 2(a)-2(q), on a foreign or heterogeneous substrate, 1. Growing a colored layer; 2. Growing III-nitride device layers on the color layer; 3-1.After the colored layers are combined as shown in Fig. 1(a)-1(p), 3-1-1. Using the hooking layer method, or 3-2. As shown in Fig. 2(a)-2(q), without combining the colored layers, 3. Removing the bar of the device layer including the color layer; 4. Removing the color layer from the bars of the device by polishing, dry etching, or wet etching, as shown in Figures 1(a)-1(p), 2(a)-2(q), and 3(a)-3(g); Includes.

[0030] In this method, the bar, including the colored layer produced by the ELO technique, is removed from the substrate, which may be a III-nitride substrate such as a GaN substrate, or a heterosubstrate such as sapphire, silicon, silicon carbide, or other substrate. Removing the bar from the substrate can reveal the colored layer on the back side of the bar. The colored layer is then removed by polishing, or dry or wet etching methods. By doing this, the deleterious effects of the colored layer can be eliminated and various advantages can be obtained from the lateral high-speed growth.

[0031] Method 2 The method comprises: 1. Growing a colored layer (with or without coalescence); 2. Growing III-nitride device layers on the color layer; 3. Simultaneously, eliminate the colored layer by wet etching and remove the bar containing the colored layer, as shown in FIG. 4(a)-4(c); Includes.

[0032] The method also provides another option for removing the color layer. The color layer can be removed by wet etching before removing the bar from the substrate. Dissolving the growth limiting mask can reveal the back side of the color layer and form voids below the color layer. The color layer can be dissolved by wet etching using etchants such as tetramethylammonium hydroxide (TMAH), potassium hydroxide (KOH), sodium hydroxide (NaOH), etc. The bar can then be removed from the substrate.

[0033] It is also possible to separate the bars by etching, and controlling the etching time can dissolve the color layer in the upper part of the opening area, which can make the bars separate from the substrate. As a result, the substrate is removed and the color layer is etched at the same time. The color layer contains a large amount of impurities, so it is easier to dissolve compared with normal layers.

[0034] Both ways In both methods, wet or dry etching methods can also etch from the backside of the color layer. When these techniques are used with c-plane polar III-nitride substrates, the backside of the color layer is nitrogen (N) polar, which is easier to dissolve and etch than the opposite surface, which is gallium (Ga) polar.

[0035] Both methods also offer the following advantages: 1. The color layer contains a large amount of impurities. Layers made by low V / III ratio growth conditions are likely to incorporate carbon, which comes from Ga sources such as triethylgallium (TEG) or trimethylgallium (TMG). Carbon plays a role in scattering and absorption losses of light from the active region. If the device contains a color layer, there is likely to be a large loss. In the present invention, removing the bar makes it easier to eliminate the color layer. The present invention allows the use of polishing, dry etching, or wet etching methods. The present invention simultaneously eliminates the color layer and separates the bar from the substrate. The present invention can be used to make very thin devices due to the fast lateral growth, which can suppress the vertical growth rate. In one embodiment, the device has a thickness of less than 20 μm, and it is also possible to make devices with thicknesses of less than 10 μm. The present invention is particularly useful for micro LEDs, as it can suppress crosstalk effects between adjacent micro LEDs due to a reduction in the amount of light extraction through the side facets of the device. The present invention is also useful for VCSELs, since it can be used to create short cavities for VCSELs, which can also have high gain due to reduced internal losses of the cavity. 2. The color layer can form voids in the III-nitride layer even when there is coalescence between adjacent ELO layers. The growth conditions of the color layer cause changes to the angle of the color layer edges, which allows voids to form. The voids prevent cracks from forming in the III-nitride device layer by reducing internal stress. In many cases without voids, cracks occur when the growth-limiting mask is buried by the device layer due to the difference in thermal expansion coefficient between the growth-limiting mask and the device layer, as shown in FIG. 5. The voids under the device layer can relieve stress. In this case, the voids are placed directly on the growth-limiting mask and are formed on a large scale. In the case where there is no coalescence of the ELO layers, the gaps between adjacent ELO layers can also relieve stress. This helps to prevent cracks from forming. 3. In the case where the back side of the bar is polished to eliminate the color layer, chemical mechanical polishing (CMP) can be used to make the polished surface very flat, for example with a surface roughness of less than a few nanometers (nm). As a result, a distributed Bragg reflector (DBR) for the VCSEL can be placed on top of the polished surface. 4. The present invention can prevent and mitigate the compensation of the p-type layer due to the growth limiting mask decomposition. Generally, in the ELO technique, the growth limiting mask may be made of silicon oxide (SiO2), silicon nitride (SiN), and the like. However, both silicon and oxygen atoms are n-type dopants for GaN. Therefore, if the growth limiting mask decomposes during the growth of the p-type layer, these atoms will compensate the p-type dopants in the p-type layer. The fast lateral growth can cover the growth limiting mask more quickly. When the device layer is grown, most of the growth limiting mask is covered with the III-nitride ELO layer. This can prevent the decomposition of the growth limiting mask, which can avoid the compensation of the p-type layer. The present invention can use either III-nitride substrates or hetero-substrates such as sapphire, silicon carbide (SiC), lithium aluminate (LiAlO2), Si, etc., as long as it allows the growth of the III-nitride-based semiconductor layer through the growth limiting mask. In the case of using a III-nitride substrate, the present invention can obtain a high-quality III-nitride-based semiconductor layer and avoid the warping or curvature of the substrate during epitaxial growth caused by homoepitaxial growth. As a result, even when using a III-nitride substrate, a device with reduced defect density such as dislocations and stacking defects can be easily obtained.

[0036] Identifying elements The figure identifies several different labeled elements, including the following: III-nitride substrate 101 Hetero Substrate 101A III-nitride template or underlayer 101B ·Growth Restriction Mask 102 ·Opening area 103 ·No growth area 104 ·Initial growth layer 105A ·Colored layer 105B III-nitride semiconductor device layer 106 · Voids or void areas 107 ·Active area 108 Current-blocking layer 109 ·p-type electrode 110 Device 111 ·Raised structure 112 ·n electrode 113 Etching area 114 Bar 115 ·Planarization layer 116 · Recessed areas 117 Photoresist 118 Hooking Layer 119 120 Breaking Points Support plate 121 Solder 122 Distributed Bragg Reflector (DBR) 123 Photoresist 124 · Package of 125 Heat sink 126 Cover layer 127 Copper layer 128 Via 129 Pad electrode 130 ·Joint metal 131 Laser 132

[0037] These elements are described in more detail below.

[0038] Definition of Terms III-nitride substrates A III-nitride based substrate 101 is shown in FIG. 1(a).

[0039] Any III-nitride based substrate 101 that allows for the growth of III-nitride based semiconductor layers through a growth limiting mask 102 may be used, including any GaN substrate 101 sliced ​​on the {0001}, {11-22}, {1-100}, {20-21}, {20-2-1}, {10-11}, {10-1-1}, {11-22}, {11-2-2} plane, etc., or other plane from a bulk GaN crystal as well as any aluminum nitride (AlN) substrate 101.

[0040] Hetero Substrate In addition, the present invention can also use a foreign or heterogeneous substrate 101A as shown in Fig. 2(a) For example, a substrate 101A such as sapphire, Si, SiC, gallium arsenide (GaAs) can be used in the present invention.

[0041] A III-nitride template or underlayer 101B, or other III-nitride such as a GaN template or underlayer 101B, may be grown on the hetero-substrate 101A. The GaN template 101B is typically grown on the hetero-substrate 101A to a thickness of about 0.5-6 μm, and then a growth-limiting mask 102 is placed on the GaN template 101B or other III-nitride based semiconductor layer 101B.

[0042] The growth-limiting mask 102 may also be formed directly on the heterosubstrate 101A, and the initial growth layer 105A, which is a III-nitride ELO layer, may be grown directly on the growth-limiting mask 102. In this case, it is not necessary for the substrate 101A to have a III-nitride template or underlayer 101B.

[0043] Growth restriction mask The growth-limiting mask 102 is shown in Figures 1(b) and 2(a).

[0044] The growth limiting mask 102 is made of a dielectric layer such as SiO2, SiN, SiON, Al2O3, AlN, AlON, MgF, ZrO2, or a refractory or noble metal such as W, Mo, Ta, Nb, Rh, Ir, Ru, Os, Pt, etc. The growth limiting mask 102 may be a laminated structure selected from the above materials. It may also be a multi-stacking layer structure selected from the above materials.

[0045] The growth limiting mask 102 is deposited by methods such as, but not limited to, sputtering, e-beam evaporation, plasma enhanced chemical vapor deposition (PECVD), ion beam deposition (IBD), and the like.

[0046] The thickness of the growth-limiting mask 102 is about 0.05 to 3 μm. The width of the stripes of the growth-limiting mask 102 is preferably greater than 20 μm, and more preferably greater than 40 μm. The length of the opening area 103 in the growth-limiting mask 102 is, for example, 200 to 35,000 μm, and the width of the opening area 103 in the growth-limiting mask 102 is, for example, 2 to 180 μm.

[0047] The ELO layer is grown from the open areas 103 of the growth-limiting mask 102, extending across the stripes of the growth-limiting mask 102, and may or may not coalesce onto the growth-limiting mask 102. When the ELO layer does not coalesce onto the growth-limiting mask 102, this results in no-growth regions 104.

[0048] In one embodiment, the growth limiting mask 102 is formed of a SiO2 film having a thickness of 1 μm, the length of the opening areas 103 is 5,000 μm, the width of the opening areas 103 is 3 to 10 μm, the spacing between the opening areas 103 is 50 to 150 μm, and the width of the stripes of the growth limiting mask 102 is 50 to 150 μm.

[0049] Growth restriction mask direction On a c-plane freestanding GaN substrate 101, the opening areas 103 of the growth limiting mask 102 are arranged periodically at a first interval and a second interval, respectively, in a first direction parallel to the 11-20 direction (a-axis) of the substrate 101 and in a second direction parallel to the 1-100 direction (m-axis) of the substrate 101, and extend in the second direction.

[0050] On a c-plane GaN template 101B grown on a sapphire substrate 101A, the open areas 103 are arranged periodically at first and second intervals, respectively, in a first direction parallel to the 11-20 direction (a-axis) of the GaN template 101B and in a second direction parallel to the 1-100 direction (m-axis) of the substrate 101A, and extend in the second direction.

[0051] On the m-plane freestanding GaN substrate 101, the open areas 103 are arranged periodically at first and second intervals, respectively, in a first direction parallel to the 11-20 direction (a-axis) of the substrate 101 and in a second direction parallel to the 0001 direction (c-axis) of the substrate 101, and extend in the second direction.

[0052] On a semi-polar (20-21) or (20-2-1) GaN substrate 101, the open areas 103 are aligned in directions parallel to [-1014] and [10-14], respectively.

[0053] Alternatively, a heterosubstrate 101A can be used. When the c-plane GaN template 101B is grown on the c-plane sapphire substrate 101A, the open area 103 is in the same direction as the c-plane freestanding GaN substrate 101, and when the m-plane GaN template 101B is grown on the m-plane sapphire substrate 101A, the open area 103 is in the same direction as the m-plane freestanding GaN substrate 101. By doing this, the m-plane cleavage plane can be used to split the bars of devices with the c-plane GaN template 101B, and the c-plane cleavage plane can be used to split the bars of devices with the m-plane GaN template 101B, which is much more preferable.

[0054] The width of the opening 103 is typically constant in the second direction, but may vary in the second direction if desired.

[0055] Group III nitride semiconductor layer 1(c)-1(g) show initial growth layer 105A, color layer 105B (also a III-nitride ELO layer), III-nitride semiconductor device layer 106, and planarization layer 116, which comprise III-nitride based semiconductor layers. These layers 105A, 105B, 106, and 116 can contain Ga, In, Al, and / or B in addition to N and other impurities such as Mg, Si, Zn, O, C, H, etc.

[0056] The III-nitride semiconductor device layers 106 generally consist of more than two layers including at least one layer selected from the group consisting of an n-type layer, an undoped layer, and a p-type layer. The III-nitride semiconductor device layers 106 specifically comprise a GaN layer, an AlGaN layer, an AlGaInN layer, an InGaN layer, etc.

[0057] colored layer In the present invention, the color layer 105B, which is also a III-nitride ELO layer, is grown on the growth limit mask 102 under very low V / III ratio growth conditions. In one embodiment, the color layer 105B is brown in color. The color intensity depends on the impurity concentration. The very low V / III ratio growth conditions enhance the chances of bonding Ga adatoms at the growth surface with other impurities such as carbon, oxygen, silicon, etc. Thus, the color layer 105B contains a large amount of impurities. Among the impurities in the color layer 105B, carbon is the most problematic. It is difficult to avoid carbon in the layer 105B because the carbon is obtained from a Ga source such as TEG or TMG.

[0058] In the present invention, the definition of the colored layer 105B is 5×10 17 cm -3 When GaN layers are grown under conventional growth conditions, such as high V / III ratio growth conditions (>3000), the carbon concentration is greater than 1×10 16cm -3 Growth conditions that allow for fast lateral growth result in layers containing carbon at a concentration, for example, an order of magnitude higher, than in the conventional conditions. This carbon concentration can be as high as 10 19 cm -3 . A higher carbon concentration leads to a higher rate of lateral growth. Thus, there is a trade-off. A high carbon concentration in the layer also strongly absorbs light from the active region.

[0059] Herein, the color layer 105B is described by SIMS profiling data, as shown in FIG. 6. FIG. 6 is a graph of SIMS depth profiling data in terms of impurities such as carbon, oxygen, and silicon. The measured layer consists of two layers, which are, in this order from the surface, the planarization layer 116 and the color layer 105B. The structure is the same as FIG. 1(f). The planarization layer 116, grown under high V / III conditions (>3000), contains less carbon than the measurable limit. On the other hand, the color layer 105B contains less carbon than the measurable limit because the color layer 105B is grown under low V / III conditions (<500). 19 cm -3 Contains more than 100 carbon atoms.

[0060] By doing this, a low carbon concentration layer can grow on the color layer 105B. To reduce light absorption, at least a portion of the color layer 105B should be removed, but it is much preferred to remove the entire color layer 105B.

[0061] Semiconductor Devices The present invention discloses a method for the removal of one or more devices 111 formed on a substrate 101 using void regions 107 in the epilayer. The devices 111 may include light emitting diodes (LEDs), laser diodes (LDs), photodetectors (PDs), Schottky barrier diodes (SBDs), metal oxide semiconductor field effect transistors (MOSFETs), or other optoelectronic devices.

[0062] The invention is particularly useful for micro-LEDs and laser diodes, such as edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs). The invention is particularly useful for semiconductor lasers having cleaved facets.

[0063] Area for forming device In the present invention, the area for forming the device 111 preferably avoids the center of the void region 107 as shown in Figure 1 (i) and Figure 3 (a). This area contains a high density of dislocations because coalescence of the color layer 105B occurs in the center of the void region 107. It is much more preferred that the device 111 is formed in an area about 5 μm away from the center of the gap region 107. In the case of the laser diode device 111, the laser raised structure 112 is preferably located in the same area.

[0064] Support plate Once removed, the bars 115 of one or more devices 111 are transferred to a support plate 121, which may be AlN, SiC, Si, Cu, CuW, and the like. As shown in Figures 1(l) and 1(m), solder 122 for joining the bars 115 is placed on the support plate 121, which may be Au-Sn, Su-Ag-Cu, Ag paste, and the like. The p-electrode 110 is then bonded to the solder 122. The devices 111 can also be flip-chip bonded to the plate 121.

[0065] In the case of bonding the LED chip to the support plate 121, the size of the support plate 121 is not important, and it can be designed as desired.

[0066] Support plate with groove It is preferred that the support plate 121 has grooves or other means for dividing the devices 111. This structure is useful when dividing the support plate 121 into bars 115 or chips. After dividing the support plate 121, the devices 111 can be processed into modules, such as lighting modules. The grooves in the support plate 121 guide the division into the devices 111. The grooves can be formed by a wet etching method and mechanically processed before the devices 111 are mounted. For example, if the support plate 121 is made of silicon, wet etching can be used to form the grooves. Using the grooves in this way shortens the process lead time.

[0067] Alternative Embodiments The following describes alternative embodiments of the present invention.

[0068] First embodiment A III-nitride based semiconductor device 111 and a method for manufacturing the same according to a first embodiment are described. In this embodiment, the device 111 may include a micro LED or a VCSEL.

[0069] Generally, a substrate 101 is first provided, and a growth-limiting mask 102 with a plurality of striped opening areas 103 is formed on the substrate 101. A color layer 105B, which is a high-rate III-nitride ELO layer, is coalesced between adjacent layers 105B. The center of the void region 107 is removed by a dry etching method. The bar 115 of the device 111 is bonded to a support plate 121, removing the bar 115 from the substrate 101. Finally, the color layer 105B is removed by a wet etching method.

[0070] 1(a)-1(m) illustrate specific process steps and structures involved in the method, which are described in more detail below.

[0071] Step 1: This step involves providing a substrate 101, as shown in FIG. 1(a), and then depositing a growth limiting mask 102 onto the substrate 101, with the remaining surface exposed by open areas 103 in the growth limiting mask 102, as shown in FIG. 1(b).

[0072] 7 is a top plan view of the growth limiting mask 102 deposited on the substrate 101. The width Wr of the stripes in the growth limiting mask 102 is 30 μm to 200 μm, more preferably 30 μm to 120 μm. The width Wo of the opening area 103 is 2 μm to 60 μm, more preferably 3 μm to 40 μm.

[0073] Instead of the III-nitride substrate 101, the present invention can use various kinds of heterosubstrates 101A with III-nitride templates 101B, such as III-nitride templates 101B on sapphire substrates 101A, silicon substrates 101A, SiC substrates 101A, etc. It is also possible to grow the initial growth layer 105A and the coloring layer 105B directly on the growth limiting mask 102 deposited on the heterosubstrate 101A.

[0074] Step 2: This step involves growing an initial growth layer 105A on the substrate 101 using the growth-limiting mask 102 such that the growth extends in a direction parallel to the striped open area 103 of the growth-limiting mask 102, and the height of the initial growth layer 105A is higher than the height of the growth-limiting mask 102, as shown in FIG. 1(c). In this case, it is much better that it is possible to easily obtain a uniform shape of the colored layer 105B within a wide range of growth conditions. Similar to FIG. 7, FIG. 1(c) also shows the width Wr of the stripes of the growth-limiting mask 102 as well as the width Wo of the open area 103.

[0075] MOCVD is used for epitaxial growth of the initial growth layer 105A. Trimethylgallium (TMGa) is used as a group III element source, ammonia (NH3) is used as a raw gas to supply nitrogen, and hydrogen (H2) and nitrogen (N2) are used as carrier gases for the group III element source. It is important to include hydrogen in the carrier gas to obtain a smooth surface for the epilayer. The growth temperature is about 900°C to 1,200°C. The thickness of the initial growth layer 105A is about 1 μm to 5 μm.

[0076] Step 3: This step involves growing the color layer 105B, as shown in FIG. 1(d). The growth conditions are almost the same as with the initial growth layer 105A. However, to increase the rate of lateral growth, the V / III ratio is set to less than 500. In particular, the NH3 flow rate should be reduced. In this case, the vertical growth rate is suppressed and the lateral growth rate is enhanced. The edge shape of the color layer 105B becomes an inverse tapered facet.

[0077] If growth of color layer 105B is terminated before coalescence, no-growth regions 104 are formed. Alternatively, growth may be continued until color layer 105B coalesces, such that no-growth regions 104 are not formed.

[0078] 1(e), the color layer 105B is coalesced but contains voids 107, which may or may not result in recessed portions 117. The inverse tapered facets of the color layer 105B help form the voids 107. These voids 107 can relieve stress from the growth limiting mask 102, which can prevent cracking in the epilayer.

[0079] The inverse tapered facets have a {11-2-2} orientation, as shown in the SEM images of Figures 8(a), 8(b), and 8(c). During the growth of the colored layer 105B, the {11-2-2} facets appear, but just before coalescence. The {11-2-2} facets tilt due to the change in growth conditions caused by the closing of each layer 105B. However, the inverse tapered facets help to generate triangular voids 107 in the colored layer 105B. Once the layers 105B coalesce in this situation, the triangular voids 107 do not disappear even if the growth continues.

[0080] MOCVD is used for epitaxial growth of the initial growth layer 105A and the color layer 105B. Trimethylgallium (TMGa) is used as a group III element source, ammonia (NH3) is used as a raw gas to supply nitrogen, and hydrogen (H2) and nitrogen (N2) are used as carrier gases for the group III element source. It is important to include hydrogen in the carrier gas to obtain a smooth surface for the epilayer.

[0081] The initial growth layer 105A has a thickness of about 1 μm to 10 μm. The initial growth layer 105A may include a GaN, AlGaN, InGaN, or InAlGaN layer in order to obtain a smooth surface.

[0082] The triangular void 107 can effectively relieve stress from the difference in thermal expansion coefficient between the GaN layers 105A, 105B and the growth limiting mask 102 such as SiO2, SiN, etc. The void 107 created by doing this is placed directly on the growth limiting mask 102 and is surrounded by the growth limiting mask 102 and layer 105B, which can effectively relieve stress from the growth limiting mask 102. Also, the triangular shape of the void 107 is much more favorable from the viewpoint of stress relief because the height of the void 107 is higher than the void 107 created without using the growth limiting mask 102. In addition, the void 107 can be formed without growth interruption.

[0083] After the color layer 105B coalesces, the voids 107 prevent cracks from occurring in the color layer 105B. Also, the color layer 105B substantially covers the growth limiting mask 102, which avoids compromising the p-type device layer 106 by decomposition of atoms from the growth limiting mask 102.

[0084] Step 4: As shown in FIG. 1(f), this step involves growing a planarization layer 116 on the color layer 105B to level the surface of the epilayer. As described in step 3, the color layer 105B may have a recessed portion 117 in the upper portion of the void 107 due to the presence of the void 107.

[0085] The planarization layer 116 is grown under conditions with a higher V / III ratio compared to the colored layer 105B for the following reasons: First, deformation of the surface roughness is avoided. Second, this avoids coloring of the planarization layer 116. Third, this enhances vertical growth in order to level the surface as quickly as possible.

[0086] In this step, the planarization layer 116 is an unintentionally doped (UID) layer or a Si-doped layer. In addition, a Mg-doped layer or a Mg and Si co-doped layer can be used as the planarization layer 116. The growth of the Mg-containing III-nitride layer effectively fills the recessed area 117 in the center of the void region 107.

[0087] Step 5: This step involves growing III-nitride semiconductor device layers 106 on the color layer 105B or planarization layer 116 as shown in FIG. 1(g). Leveling the surface of the epilayers helps prevent variations in the wavelength emission from the active region 108. If the surface is not at the same height, the indium or aluminum composition is varied to accommodate surface roughness. Leveling the surface refers to the growth of the active region 108.

[0088] MOCVD is used for epitaxial growth of the III-nitride semiconductor device layers 106. Trimethylgallium (TMGa), triethylgallium (TEG), trimethylindium (TMIn), and triethylaluminum (TMAl) are used as the III-element sources, ammonia (NH3) is used as the raw gas to provide nitrogen, and hydrogen (H2) and nitrogen (N2) are used as carrier gases for the III-element sources.

[0089] Saline and bis(cyclopentadienyl)magnesium (Cp2Mg) are used as n-type and p-type dopants, respectively. Pressure settings are typically 50-760 Torr. III-nitride semiconductor device layers 106 are generally grown at a temperature range of 700-1,250°C.

[0090] For example, the growth parameters include the following: TMG is 12 sccm, NH3 is 8 slm, carrier gas is 3 slm, SiH4 is 1.0 sccm, and V / III ratio is about 7,700. These growth conditions are only an example, and the conditions can be changed and optimized for each III-nitride semiconductor device layer 106.

[0091] Step 5': If the planarization layer 116 is not grown or does not obtain a flat surface, it may be possible to polish the surface of the planarization layer 116 or the coloring layer 105B to further planarize the surface before the growth of the III-nitride semiconductor device layer 106. For example, CMP can be used.

[0092] Step 6: This step involves fabricating devices 111 on the flat surface regions of the III-nitride semiconductor device layer 106 by conventional methods, as shown in FIG. 1(h), where a current blocking layer 109, a p-electrode 110, a raised structure 112, etc. are disposed on the island-like III-nitride semiconductor device layer 106 at predetermined locations.

[0093] Step 7: This step involves etching the III-nitride semiconductor device layer 106, the planarization layer 116, and the color layer 105B by conventional dry etching and photolithography methods, as shown in FIG. 1(i)-1(j). Photoresist 118 is deposited as shown in FIG. 1(i), and then the center of the void region 107 is etched as the etching region 114, as shown in FIG. 1(j). The bottom of the etching region 114 should reach the top of the void 107 to split the epilayer into bars 115. What is around the center of the void region 107 are many defects, which are generated when the color layer 105B is coalesced. It is much better to remove the part with many defects in the upper part of the void region 107. The width L of the etching region 114 is preferably more than 3 μm.

[0094] Using etched regions 114, the growth limiting mask 102 can then be dissolved using a wet etchant such as hydrofluoric acid (HF) and buffered HF, which serves to remove the bars 115 from the substrate 101, as shown in FIG. 1(k).

[0095] Step 8: This step describes the removal of the bar 115, which can be adapted from any number of methods. In one method, the bar 115 of the device 111 is removed from the substrate 101 using a support plate 121 to bond the bar 115, as shown in FIG. 1(l). It is preferable that the support plate 121 is made of a high thermal conductivity material and / or a high leveling surface flatness material. The support plate 121 has a metal, e.g., a solder 122, for bonding the p-electrode 110 disposed on the bar 115. Typically, the bonding temperature is about 300° C., depending on the type of metal. The substrate 101 bonded to the support plate 121 is heated. After melting the metal and the solder, the substrate 101 and the support plate 121 are cooled. At this point, the difference in thermal expansion coefficient between the substrate 101 and the support plate 121 applies a stress to the connection point of the initial growth layer 105A, as shown in FIG. 1(l). The stress then breaks the remaining bonds in the initial growth layer 105 A. The bar 115 can be transferred to a support plate 121 .

[0096] Step 9: This step involves removing the color layer 105B. As shown in FIG. 1(m), the bar 115 is mounted on the support plate 121 with the joints facing down. In the case of c-plane polar III-nitride devices 111, the N-polar surface of the bar 115, which is easier and quicker to polish or etch, is in an upward orientation. Also, the color layer 105B is removed by removing, for example, 1×10 18 cm -3 Since the color layer 105B contains a large amount of impurities, exceeding 100%, the etching rate is increased, which makes the color layer 105B easier to etch.

[0097] In the present invention, the color layer 105B should be less than 18 μm thick, more preferably less than 10 μm thick, in order to reduce process time and obtain yield. The present invention enables this to be realized. As explained above, during the growth of the color layer 105B, the lateral growth is increased and the vertical growth is suppressed, which means that the color layer 105B can be grown thinner, which makes it easier to etch the color layer 105B.

[0098] As shown in FIG. 1(n), in the case of polar c-plane III-nitride devices 111, a very rough surface over the color layer 105B can be obtained using an alkaline etchant such as KOH, NaOH, TMAH, etc. to remove the color layer 105B from the bar 115. This rough surface is intended to enhance the extraction of light emitted from the active region 108 of the device layer 106. Thus, the elimination of the color layer 105B can also simultaneously create a structure for enhanced light extraction, which can reduce processing costs and time. It is also possible to use a photoelectrochemical (PEC) etching method to remove the color layer 105B and roughen the surface.

[0099] Alternatively, color layer 105B may be removed by CMP to obtain a flat surface, as shown in FIG. 1(o). A DBR 123 may be disposed on the polished surface for use in VCSEL device 111. DBR 123 for VCSELs requires a very flat surface for reduced light scattering at the interface between DBR 123 and the polished surface.

[0100] Step 10: This step involves fabricating n-electrodes on the bars 115 of the devices 111. After removing the coloring layer 105B, with the bars 115 attached to the support plate 121 in an upside-down fashion using solder 122, the n-electrodes (not shown) can be placed on the backside of the III-nitride device layer 106 or the planarization layer 116 using a metal mask method. When the height of the bars 115 exceeds 10 μm, it is preferable to use the metal mask method to place the n-electrodes.

[0101] Typically, the n-electrode is made of the following materials: Ti, Hf, Cr, Al, Mo, W, Au. For example, the n-electrode may be made of Ti-Al-Pt-Au (with a thickness of 30-100-30-500 nm), but is not limited to these materials. The deposition of these materials may be performed by electron beam evaporation, sputtering, thermal evaporation, etc.

[0102] An n-electrode can also be disposed on the top surface, which is the same surface that is fabricated for the p-electrode 110.

[0103] Step 11: This step involves breaking the support plate 121 and bar 115 into the device 111 after placing the n-electrode, as shown in FIG. 1(p). This step can use breaking methods as well as other conventional methods, but is not limited to these. It is preferable for the blade to contact the side of the bar 115 that is not formed by the split support region at the location of the split support region.

[0104] Step 12: This step involves mounting each device 111 or an array of devices 111 in a package 125 or on a heat sink plate 126, as shown in Figures 9(a) and 9(b). Generally, micro LEDs or VCSELs are chips with very small sizes. To obtain high power output, it is better to mount the devices 111 in a package 125 or on a heat sink plate 126.

[0105] For example, as shown in FIG. 9(a), the device 111 is mounted in a package 125. The solder 122 (Au-Sn, Sn-AG-Cu, and the like) or bonding metal, which is disposed on the bottom of the package 125, is bonded to the solder 122 on the support plate 121 by wires. The pins of the package 125 are connected to the solder 122 on the support plate 121 by wires. By doing this, a current from an external source can be applied to the device 111. This is preferable to the bonding between the package 125 and the support plate 121, which is performed by a metal bond, such as a Au-Au, Au-In, etc. bond. This method requires flatness on the surface of the package 125 and the backside of the heat sink plate 126. However, without the solder 122, this configuration achieves high thermal conductivity and low temperature bonding, which are great advantages for device processing.

[0106] Also, phosphors can be set on the outside and / or inside of the package 125. By doing this, the module can be used as a light bulb or headlight in an automobile.

[0107] <Recycling of circuit boards> As described herein, these processes provide improved methods for obtaining laser diode devices, VCSELs, LEDs, and photodiode devices. In addition, once the devices are removed from the substrate, the substrate can be recycled several times by polishing the surface removed from the device. This achieves the goal of environmentally friendly production and low-cost modules. These devices can be utilized as lighting devices such as light bulbs, data storage devices, optical communication devices such as Li-Fi, etc.

[0108] So far, it is difficult to package multiple different types of lasers in one package. However, the present method can overcome this problem because it is possible to perform aging tests without packaging. Therefore, when different types of devices are mounted in one package, they can be easily mounted.

[0109] In addition, as shown in Figure 9(b), this can result in the formation of an array of devices 111, which can be VCSELs, micro LEDs, etc. In this case, the array can be used for displays, digital signs, etc.

[0110] Second embodiment The second embodiment is almost identical to the first embodiment, except for the removal method.

[0111] In step 7, the removal method may also remove the upper portion of the open area 103 as well as the center of the void region 107 by removal of the bars 115. This is illustrated by Figures 3(a)-3(g).

[0112] Etching of the initial growth layer 105A, the planarization layer 116, and the color layer 105B can be performed by conventional photolithography and dry etching methods, as shown in Figures 3(a) and 3(b). Photoresist 118 is patterned to etch the gap 107 and the upper portion of the open area 103. Etching can use other materials, such as an etching mask, including a dielectric mask, a metal mask, and the like.

[0113] The depth of the etching region 114 needs to reach the top of the growth limiting mask 102 in the opening area 103 and separate the bar 115 from the substrate 101, as shown in FIG. 3(b). It is preferable that the width of the etching region 114 in the opening area 103 is wider than the width of the opening area 103 to separate the bar 115 from the substrate 101. At this point, the bar 115 is on the growth limiting mask 102. The bonding strength at the interface between the bottom of the color layer 105B and the surface of the growth limiting mask 102 is very weak. If a certain stress or force is applied on the bar 115, the bar 115 can be easily removed.

[0114] As a next step, the photoresist 118 should be removed using ultrasonic cleaning and solvents such as acetone and ethanol. During this cleaning, the bars 115 may be removed.

[0115] When the etched regions 114 in the open areas 103 reach the growth limiting mask 102, the bars 115 can be separated from the substrate 101. The bars 115 can be hooked to the substrate 101 by a hooking layer 119, such as a dielectric mask made of SiO2, SiN, SiON, Al2O3, AlON, AlN, ZrO2, Ta2O5, etc., as shown in Figures 3(c) and 3(d). Dissolving the photoresist 118 can lift off the hooking layer 119 from the photoresist 118.

[0116] The hooking layer 119 has two purposes. One is to fix the bar 115 on the growth limiting mask 102 and temporarily avoid the bar 115 from being peeled off and removed when the photoresist 118 is dissolved by a solvent and then ultrasonic cleaning. The other is that using a dielectric material as the hooking layer 119 can passivate the side facets of the bar 115. The side facets of the bar 115 are sometimes damaged from dry etching depending on the etching conditions. If the width of the bar 115 is narrow, leakage currents occurring at the side facets of the bar 115 due to etching damage may affect the characteristics of the device 111. For example, dielectric materials such as SiO2, SiN, SiON, Al2O3, AlON, AlN, ZrO2, Ta2O5, etc. can be selected to reduce the leakage current of the side facets.

[0117] The strength of the fixation of the bar 115 can be varied by varying the thickness of the hooking layer 119. For example, the strength can be controlled so as not to remove the bar 115 during ultrasonic cleaning, a peeling process, or some other process.

[0118] The bar 115 can also be removed using a support plate 121, as shown in FIG. 3(e). Solder 122 on the support plate 121 can bond the bar 115 to the support plate 121. Generally, the bonding process increases the temperature, for example, the use of Au-Sn solder 122 results in a bonding temperature of about 280° C. After bonding, when the temperature is reduced to room temperature, stress from different thermal expansion coefficients can break the hooking layer 119 at a breaking point 120, as shown in FIG. 3(e), and the bar 115 and device 111 can be removed from the substrate 101, as shown in FIG. 3(f).

[0119] The color layer 105B appears on the opposite bar 115 of the support plate 121 and on the backside of the device 111. The color layer 105B can then be removed by CMP, either in its entirety or in part, which reduces light absorption losses due to the coloring. In the embodiment shown in Figure 3(g), the color layer 105B has been completely eliminated, exposing the planarization layer 116.

[0120] Third embodiment The third embodiment is carried out without incorporating the colored layer 105B. This embodiment has the following features. 1. Use a heterosubstrate 101A with a GaN template or underlayer 101B on its surface, where the base heterosubstrate 101A is sapphire. 2. The color layers 105B are not merged with each other. 3. A planarization process can be used to bond the bar 115 to the support plate 121. 4. A laser ablation process is used to remove the bars 115.

[0121] This embodiment uses the gap between adjacent color layers 105B, referred to herein as no-growth area 104. The no-growth area 104 plays an important role in releasing internal stress, which can prevent cracks from occurring. In this embodiment, the height of the bar 115 may have variations compared to the coalesced version. The height variations sometimes make the bonding process difficult. This embodiment can bond the bar 115 to the support plate 121 even when the bar 115 has height variations.

[0122] This embodiment is illustrated in FIG. 2. A growth limiting mask 102 is disposed on a base wafer 101A with a GaN underlayer 101B, as shown in FIG. 2(a). The base wafer 101A is a hetero-substrate, such as a sapphire substrate. The thickness of the GaN underlayer 101B preferably ranges from 0.4 μm to 5 μm. An initial growth layer 105A is grown on the GaN underlayer 101B.

[0123] The color layer 105B is then grown successively, as shown in Figure 2(b), in which case the growth of the color layer 105B stops before the color layers 105B coalesce with each other, resulting in a non-growth region 104.

[0124] Then, the planarization layer 116 is grown on and surrounds the coloring layer 105B, as shown in FIG. 2(c), and the planarization layer 116 acts as both the planarization layer 116 and the buffer layer. The coloring layer 105B sometimes has a rough surface depending on the growth conditions. Therefore, the planarization layer 116 can improve the surface roughness of the coloring layer 105B. Later, when the coloring layer 105B is etched or polished, the planarization layer 116 can protect the III-nitride semiconductor device layer 106 from etching or polishing as a buffer layer. In a large size wafer, the amount of etching and polishing has a certain in-plane distribution. Therefore, the thickness of the planarization layer 116 is preferably set to at least 0.5 μm for the protection of the device layer 106.

[0125] As described above, the colored layer 105B does not coalesce, which results in a no-growth region 104. This no-growth region 104 causes decomposition of the growth limiting mask 102. To suppress the decomposition, the width of the no-growth region 105 is set to be narrow, for example, less than 20 μm, more preferably less than 10 μm.

[0126] Alternatively, a cover layer 127 can be used to avoid decomposition of the growth limiting mask 102 by placing the cover layer 127 over the growth limiting mask 102 in the no-growth regions 104, as shown in Figure 2(d). The cover layer 127 should be a dielectric layer that does not contain refractory metals such as Pt, W, Mo, or n-dopants such as TiN.

[0127] The III-nitride semiconductor device layer 106 is grown on the planarization layer 116, as shown in FIG. 2(e). When the bottom layer of the III-nitride semiconductor device layer 106 is thicker, it is not necessary to grow the planarization layer 116 because the bottom layer can protect the active region 108. The distance between the surface of the color layer 105B and the bottom of the active region 108 should be at least more than 0.5 μm to protect the active region 108 against the etching or polishing process.

[0128] The fabrication of the device 111 is implemented on the III-nitride semiconductor device layer 106, as shown in FIG. 2(f), with the current blocking layer 109, p-electrode 110, ridge structure 112, etc., placed in place on the island-like III-nitride semiconductor device layer 106. If the device 111 is a micro-LED, a highly reflective contact metal layer, such as Ni(0.7 nm) / Ag(250 nm) / Ni(200 nm), can be used for the p-electrode 110. In this embodiment, the micro-LED is mounted with the connection down, and the highly reflective contact metal layer improves light extraction.

[0129] In this embodiment, the no-growth areas 104 serve as isolation trenches that can be filled with epoxy or photoresist for surface planarization. Filling the isolation trenches can eliminate cracking and shattering of the epilayer during the laser peeling process from the substrate 101A to remove the device 111 from the substrate 101A.

[0130] This is illustrated in Figure 2(g) and TMA 35 μm thick epoxy-based SU-8 2025 photoresist 124 made by Micro Chemical Industries, Ltd. was spin-coated on the top surface of the bar 115 at a spin rate of about 2,000 RPM for 30 seconds. Pre- and post-baking was implemented at 65° C. for 2 minutes and 95° C. for 5 minutes, respectively, for evaporation of the solvent in the SU-8. UV exposure was then carried out in the conventional manner. A post-baking was again carried out at 95° C. for 3 minutes. The unpolymerized photoresist 124 was then developed using a development step using Micro Chemical Industries, Ltd. for 5 minutes. TM The photoresist 124 was removed by immersing the wafer in SU-8 developer. The photoresist 124 was baked at 250 degrees for 30 minutes to harden the photoresist 124. Afterwards, a seed metal layer (not shown) was laid down for electroplating, i.e., a Ti (50 nm) / Cu (500 nm) seed metal layer was evaporated onto the electrodes of the device 111.

[0131] A 30 μm thick copper layer 128 was electroplated, as shown in FIG 2(h). The copper layer 128 and photoresist 124 were polished to level the surface until the copper layer 128 was about 20 μm thick, as shown in FIG 2(i). By doing this, the planarization of the surface was completed.

[0132] Leveling the surface makes it easier to bond the bar 115 to the support plate 121, as shown in FIG. 2(j). The support plate 121 consists of AlN with vias 129 filled with Cu, and pad electrodes 130, as shown in FIG. 2(j). A bonding metal layer 131 of Ti(100 nm) / Ni(100 nm) / AuSn(1,500 nm) is deposited on the copper layer 128.

[0133] The wafer was bonded onto the support plate 121 at 300 degrees for 30 minutes, as shown in FIG. 2(k).

[0134] In this embodiment, a laser delamination method may be implemented to remove the bars 115. However, the method used differs from conventional laser delamination methods due to the use of epitaxial lateral overgrowth.

[0135] The bars 115 contact the substrate 101A through the open areas 103, which are filled by the initial growth layer 105A, as shown in Figure 2(l). Laser delamination removes the bars 115 from the substrate 101A by irradiating the initial growth layer 105A in the open areas 103 using a KrF excimer laser 132 (with a wavelength of 248 nm).

[0136] Note that the open area 103 is very small compared to the substrate 101 A. Conventional laser delamination methods require irradiating the entire wafer to remove the device layer 106 from the substrate 101 A.

[0137] Preferably, the substrate 101A is a sapphire substrate 101A that is transparent to the KrF excimer laser 132.

[0138] In this embodiment, using the ELO method and the laser peeling method can shorten the irradiation time of the laser 132, which leads to a reduction in the process cost and a long life of the KrF excimer laser 132. It is preferable that at least the area irradiated by the laser 132 is larger than the opening area 103.

[0139] Also, to improve the yield of removal using the laser ablation method, the underlayer 101B is thinner than usual. For separation of the bars 115 from the substrate 101A, it is preferred that the thickness of the underlayer 101B is less than 4 μm, more preferably less than 2 μm. It is possible not to grow the underlayer 101B, and instead the colored layer 105B is grown directly on the sapphire substrate 101A surface, which is easier to remove.

[0140] 2(m) shows the substrate 101, underlayer 101B, and growth limiting mask 102 following laser release. The processing sequence after laser release uses an HCl solution treatment to remove any residual Ga from the laser release.

[0141] Then, the next step is the removal of the color layer 105B, which is the same as described above in step 9. In this case, CMP can be used as shown in FIG. 2(n), but dry and wet etching methods can also be used.

[0142] After the color layer 105B is removed, as shown in Fig. 2(o), a DBR layer 123 may be disposed on the back side of the bar 115 because the surface of the planarization layer 116 is very smooth due to the polishing by CMP. As a result, this embodiment can be used to fabricate a VCSEL device 111.

[0143] As shown in FIG. 2(p), this embodiment can also be used to fabricate LED devices 111 by depositing an n-electrode 113 on the back side of the bar 115, and the support plate 121 is then divided into bars 115.

[0144] <Side facet active area> In this embodiment, the color layer 105B and the III-nitride semiconductor device layer 106 do not merge. However, the active region 108 of the III-nitride semiconductor device layer 106 is bent as shown in FIG. 2(q) due to the presence of the non-growth region 104 (not shown). This part of the active region 108 is called the side facet active region. This side facet active region absorbs light from the active region 108, so the efficiency of the device 111 is reduced. Needless to say, the side facet active region should be removed for the efficiency of the device 111. Also, the side facet active region should be removed to reduce the crosstalk effect between adjacent micro LED devices 111.

[0145] <Flattening method> Planarization using photoresist 124 resist reduces the variation in height of the bars 115, which improves the bonding yield. Planarization can also shorten the process time for the laser stripping process because the irradiation area for removing the bars 115 is limited. Planarization using photoresist 124 can also be used in the case of incorporation of the color layer 105B. For example, after forming the grooves in step 7, the planarization process can be utilized. Planarization is especially useful when no-growth areas 104 are present.

[0146] <Laser delamination process and ELO technique> The laser delamination method and ELO technique offer the following advantages: 1. Using the ELO technique significantly reduces the defect density, even in the case of a heterogeneous substrate 101A such as a sapphire substrate. 2. The bars 115 can be removed from the substrate 101 using a laser 132 to illuminate only the open area 103. Scanning the laser 132 light along the open area 103 can significantly reduce both the process time and cost. 3. Because the irradiated area is only the open area 103, the Ga metal contamination does not affect any remaining area of ​​the bar 115. For example, the backside of the bar 115 is protected by contacting the growth-limiting mask 102 during irradiation by the laser 132. The remaining area is marked by a dashed line, as shown in FIG. 2(l). Even if the laser 132 irradiates the remaining area, the GaN underlayer 101B in the remaining area absorbs the laser 132 light. Therefore, the backside of the bar 115 marked by the dashed line is not damaged.

[0147] <Removal of colored layers> The bar 115 is mounted on the support plate 121 with the joints located downward. When using polar c-plane III-nitride semiconductor device layers 106, the top surface of the bar 115 is N-polar, which is easier and faster to polish and etch. Also, the etching rate is increased because the color layer 105B contains a large amount of impurities.

[0148] In the present invention, the color layer 105B should have a thickness of 18 μm, more preferably less than 10 μm, in order to shorten the process time and obtain a high yield. As described above, during the growth of the color layer 105B, the lateral growth is increased in speed and the vertical growth is suppressed, which allows the color layer 105B to be grown thinner. This makes it easier to etch the color layer 105B.

[0149] As shown in FIG. 1(n), a rough surface can be obtained using an alkaline etchant such as KOH, NaOH, TMAH, etc. to remove the color layer 105B from the polar c-plane III-nitride semiconductor device layer 106. This also helps in the extraction of light emitted from the active region 108. As a result, the removal of the color layer 105B can also simultaneously create a structure for light extraction, which can reduce the process cost and time. Also, as described above, PEC etching can be used as well.

[0150] Another option is to remove the color layer 105B by CMP to obtain a flat surface, as shown in Fig. 1(m). A DBR 123 may be placed on the polished surface for the VCSEL device 111, as shown in Fig. 1(o), which requires a very flat surface for reduced light scattering at the interface between the DBR 123 and the polished surface.

[0151] The effect is to reduce light absorption by color layer 105B due to the elimination of at least a portion of color layer 105B.

[0152] Process Steps 10 is a flow chart illustrating a method for removing devices 111 from a substrate 101, 101A, 101B using ELO techniques, in which one or more bars 115 consisting of III-nitride semiconductor layers 105A, 105B, 116, 106 are formed on the substrate 101, 101A, 101B, device 111 structures are formed on the bars 115, at least one support plate 121 is bonded to the bars 115, the support plate 121 is used to remove the bars 115 from the substrate 101, 101A, 101B, the support plate 121 is used to divide the bars 115 into one or more device 111 units, and the device 111 units are arranged and mounted in one or more packages 125. The steps of the method are described in more detail below.

[0153] Block 1001 represents the step of providing a base substrate 101. In one embodiment, the base substrate 101 is a III-nitride based substrate 101, such as a GaN based substrate 101, or a foreign or heterogeneous substrate 101A, such as a sapphire substrate 101A. This step may also include the optional step of depositing a III-nitride template or underlayer 101B on or above the substrate 101A, which may comprise a buffer layer or intermediate layer, such as a GaN template or underlayer 101B.

[0154] Block 1002 represents the step of depositing a growth-limiting mask 102 on or above the substrate 101, i.e., on the substrate 101, 101A itself, or on a template or underlayer 101B. The growth-limiting mask 102 is patterned to include a plurality of open areas 103.

[0155] Block 1003 represents the step of performing epitaxial lateral overgrowth (ELO) of one or more III-nitride layers 105A, 105B on or above the growth limiting mask 102, where III-nitride layer 105A comprises initial growth layer 105A and III-nitride layer 105B comprises colored layer 105B.

[0156] In one embodiment, the III-nitride layer 105B is grown directly on the growth-limiting mask 102 so as to cover the growth-limiting mask 102, and the color layer 105B has a thickness that is less than about 18 μm.

[0157] III-nitride layer 105B is grown with a low V / III ratio of less than 500, resulting in fast lateral growth compared to slow vertical growth, which reduces the cost of the device due to reduced growth time and raw materials used. Specifically, the fast lateral growth suppresses vertical growth, which reduces the aspect ratio between the width and height of III-nitride layer 105B, thereby enabling a thinner device 111.

[0158] The fast lateral growth reduces the side facet area and therefore the amount of light extracted from the side facet area. The fast lateral growth also reduces the variation in height of the III-nitride layer 105B. In addition, the fast lateral growth allows for a wider period between the open areas 103 in the growth limiting mask 102 deposited on the substrate 101, 101A, 101B without coalescence regions.

[0159] The III-nitride layer 105B is 1×10 18 cm -3 , which results in the III-nitride layer 105B comprising color layers 105B, which absorb and scatter light from the active region 108 due to the large amount of impurities. In addition, at least one of the color layers 105B includes voids 107, which reduces stress.

[0160] This step also includes the optional step of allowing adjacent ones of ELO III-nitride layers 105A, 105B to coalesce with one another or stopping the growth of ELO III-nitride layers 105A, 105B before adjacent ones of ELO III-nitride layers 105A, 105B coalesce with one another.

[0161] Block 1004 represents the step of growing one or more III-nitride semiconductor device layers 106 on or above the initial growth layer 105A and the color layer 105B, thereby forming a bar 115 on the substrate 101 consisting of the color layer 105B and the III-nitride semiconductor device layer 106. Additional device 111 processing may occur before and / or after the bar 115 is removed from the substrate 101.

[0162] Block 1005 represents the step of bonding a support plate 121 to the bar 115. The support plate 121 is used to remove the substrates 101, 101A, 101B and the color layer 105B from the device 111 structure when the bar 115 is removed from the substrates 101, 101A.

[0163] Block 1006 represents the step of removing the bars 115 from the substrates 101, 101A, 101B. This step eliminates at least a portion of at least one of the colored layers 105B from the bars 115 of the devices 111, thereby reducing light absorption losses.

[0164] Block 1007 represents the step of processing the bars 115 into devices 111 after the bars 115 have been removed from the substrates 101, 101A.

[0165] Block 1008 represents the step of dividing the bar 115 into one or more devices 111 by cleaving dividing support regions formed along the bar 115 .

[0166] Block 1009 represents the step of mounting the device 111 with the support plate 121 in a package 125 or module.

[0167] Block 1010 represents the resulting products of the method, i.e., one or more III-nitride based semiconductor devices 111 that have been processed according to the method, as well as substrates 101, 101A that have been removed from the devices 111 and are available for reclamation and reuse.

[0168] The device may comprise one or more ELO III-nitride layers 105A grown on or above a growth-limiting mask 102 on a substrate 101, where growth of the ELO III-nitride layers 105A is stopped before adjacent ones of the ELO III-nitride layers 105A coalesce with one another. The device may further comprise one or more III-nitride regrowth layers 105B and one or more additional III-nitride semiconductor device layers 106 grown on or above the ELO III-nitride layer 105A and the substrate 101.

[0169] Advantages and Benefits The present invention includes the following advantages and benefits. 1. ELO layer 105A without defects and device layer with large area. 2. Fast lateral growth rate using low V / III ratio. 3. Compensation of the p-type layer by decomposition of the growth limiting mask 102 can be avoided. 4. The color layer 105B can be removed by polishing or etching. 5. Polishing or etching obtains a very smooth backside of the bars 115 of the devices 111. 6. A laser lift-off process makes it easy to remove the bars 115.

[0170] Modifications and Substitutions Several modifications and alternatives can be made without departing from the scope of the present invention.

[0171] For example, the present invention may be used with III-nitride substrates of other orientations. In particular, the substrate may be a semi-polar plane family having at least two non-zero h, i, or k Miller indices and a non-zero l Miller index, such as the basal non-polar m-plane {10-10} family and the {20-2-1} plane. (20-2-1) semi-polar substrates are particularly useful due to the large area of ​​planarized ELO.

[0172] Also, the present invention can use various kinds of heterosubstrates, such as III-nitride layers on sapphire substrates, silicon substrates, and SiC substrates, etc. It is possible to grow III-nitride ELO layers on sapphire substrates with growth limiting masks.

[0173] In another embodiment, the present invention is described as being used to fabricate different optoelectronic device structures such as light emitting diodes (LEDs), laser diodes (LDs), photodiodes (PDs), Schottky barrier diodes (SBDs), or metal oxide semiconductor field effect transistors (MOSFETs). The present invention may also be used to fabricate other optoelectronic devices such as microLEDs, vertical cavity surface emitting lasers (VCSELs), edge emitting laser diodes (EELDs), and solar cells.

[0174] conclusion The description of the preferred embodiments of the present invention now concludes. The foregoing description of one or more embodiments of the present invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teachings. It is intended that the scope of the present invention be limited not by this detailed description, but rather by the claims appended hereto.

Claims

1. 1. A method comprising: growing one or more color layers and a device layer on a substrate using a growth-limiting mask, the one or more color layers having a gallium (Ga) polar surface and a nitrogen (N) polar surface; forming a bar comprising the one or more color layers and the device layer; removing the bar from the substrate; completely removing said one or more color layers from said bar by etching said nitrogen (N) polar surface; removing one or more devices from the substrate by

2. The method of claim 1 , wherein the substrate is a Group III-nitride based substrate, a foreign substrate, or a heterosubstrate.

3. The method of claim 1 , wherein the one or more color layers have a thickness of less than about 18 μm.

4. The method of claim 1 , wherein the one or more color layers are grown directly on the growth-limiting mask.

5. The method of claim 1 , wherein adjacent ones of the one or more color layers merge with one another.

6. The method of claim 5 , wherein at least one of the one or more color layers comprises a void.

7. The method of claim 1 , wherein growth of the one or more color layers is stopped before adjacent ones of the one or more color layers coalesce with one another.

8. The method of claim 1 further comprising forming a cover layer in the non-growth areas.

9. 1. A method comprising: performing epitaxial lateral overgrowth (ELO) of a III-nitride layer, covering a growth-limiting mask deposited on the substrate; the III-nitride layer is grown at a low V / III ratio of less than 500, resulting in fast lateral growth compared to slower vertical growth; The III-nitride layer has a thickness of 1×10 １８ cm －３ containing a significant amount of impurities exceeding the colored layer absorbs light from the active region due to the large amount of impurities; the color layer has a gallium (Ga) polar surface and a nitrogen (N) polar surface; When a bar of device layers grown on the III-nitride layers is removed from the substrate, at least a portion of the color layer is completely removed by etching the nitrogen (N) polar surface, thereby reducing optical absorption losses.

10. 1. A method comprising:

2. A method for fabricating a semiconductor device comprising: providing a method for fabricating a semiconductor device comprising the steps of: providing a semiconductor device having a semiconductor substrate; and providing a semiconductor substrate having a semiconductor substrate; and providing a semiconductor substrate having a semiconductor substrate; and providing a semiconductor substrate having a semiconductor substrate. the high rate lateral growth of the III-nitride layer results from low V / III ratio growth conditions of less than 500; The rapid lateral growth of the III-nitride layers is a colored layer having a gallium (Ga) polar surface and a nitrogen (N) polar surface. １８ cm －３ and Completely removing the color layer from the bar by etching the nitrogen (N) polar surface. The method includes:

11. The method of claim 10 , wherein the higher concentration of impurities in the Group III-nitride layer causes absorption and scattering of light generated in an active region.

12. 11. The method of claim 10, wherein the high rate lateral growth reduces device cost due to reduced growth time and raw materials used.

13. 11. The method of claim 10, wherein the high rate lateral growth suppresses vertical growth, which reduces the aspect ratio between the width and height of the III-nitride layer, thereby enabling thin devices.

14. The method of claim 10 , wherein the high rate of lateral growth reduces a side facet surface and therefore reduces the amount of light extracted from the side facet surface.

15. The method of claim 10 , wherein the high rate lateral growth reduces height variations of the III-nitride layer.

16. 11. The method of claim 10, wherein the fast lateral growth allows for a wider periodic spacing between open areas in a growth limiting mask deposited on a substrate without coalescence regions.

17. The method of claim 1 , wherein the one or more color layers are grown from open areas with a faster lateral growth on the growth-limiting mask than a slower vertical growth from the open areas in the growth-limiting mask.

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