Plasma processing apparatus and method for processing plasma

Abstract

To improve the in-plane uniformity of substrate temperature.SOLUTION: A mounting table has a mounting surface on which a substrate is mounted, an electrode for applying bias power located below the mounting surface, a power supply line for applying bias power located below the electrode, and a power feed terminal that electrically connects the electrode and the power feed line, in which an area of a surface connected to the electrode is wider than an area of a surface connected to the power feed line.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a mounting table and a plasma processing apparatus. [Background technology]

[0002] An electrostatic chuck and an edge ring (also called a focus ring) are provided on the mounting surface of a mounting table of a plasma processing apparatus, and an attraction electrode, a bias application electrode, a heater, etc. may be embedded in the electrostatic chuck and the edge ring. For example, Patent Document 1 discloses a cylindrical contact structure that is connected to an electrode as a power supply terminal. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-110216 A Summary of the Invention [Problem to be solved by the invention]

[0004] When a current flows through the power supply terminal, heat is generated at the contact area, which can cause the temperature of the board to become uneven.

[0005] The present disclosure provides a technique capable of improving the in-plane uniformity of the substrate temperature. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, The first step is to place the substrate. A mounting surface; a second mounting surface for mounting an edge ring disposed around the periphery of the substrate; and a first chucking electrode disposed below the first mounting surface; The above 1st adsorption electrode is placed below No. 1 A bias electrode; a second chucking electrode disposed below the second mounting surface; and a second bias electrode disposed below the second chucking electrode. A mounting platform is provided. Effect of the Invention

[0007] According to one aspect, the in-plane uniformity of the substrate temperature can be improved. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view showing an example of a plasma processing apparatus according to an embodiment; [Diagram 2] FIG. 2 is a diagram showing an example of a structure of a mounting table according to an embodiment. [Diagram 3] FIG. 4 is a diagram showing an example of connections between each electrode of the mounting table and a power source according to the embodiment. [Figure 4] FIG. 2 illustrates an example of an electrode contact according to an embodiment. [Diagram 5] FIG. 13 illustrates another example of an electrode contact according to an embodiment. [Figure 6] 2A to 2C are views showing cross sections AA, BB, and CC of a mounting table according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are designated by the same reference numerals, and duplicated descriptions may be omitted.

[0010] [Plasma processing equipment] Fig. 1 is a schematic diagram of a plasma processing apparatus 1 according to an embodiment. The plasma processing apparatus 1 shown in Fig. 1 is a capacitively coupled apparatus. The plasma processing apparatus 1 has a chamber 10. The chamber 10 provides an internal space 10s therein.

[0011] The chamber 10 includes a chamber body 12. The chamber body 12 has a substantially cylindrical shape. An internal space 10s is provided inside the chamber body 12. The chamber body 12 is made of, for example, aluminum. A corrosion-resistant film is provided on the inner wall surface of the chamber body 12. The corrosion-resistant film may be a film made of a ceramic such as aluminum oxide or yttrium oxide.

[0012] A passage 12p is formed in a sidewall of the chamber body 12. The substrate W passes through the passage 12p when being transferred between the internal space 10s and the outside of the chamber 10. The passage 12p can be opened and closed by a gate valve 12g. The gate valve 12g is provided along the sidewall of the chamber body 12.

[0013] A support 13 is provided on the bottom of the chamber body 12. The support 13 is made of an insulating material. The support 13 has a substantially cylindrical shape. The support 13 extends upward from the bottom of the chamber body 12 in the internal space 10s. A member 15 is provided on the support 13. The member 15 may be made of an insulating material such as quartz. The member 15 may be a plate-like body having a ring shape.

[0014] The plasma processing apparatus 1 further includes a substrate mounting table, i.e., a mounting table 14 according to an exemplary embodiment. The mounting table 14 is supported by a support 13. The mounting table 14 is provided in the internal space 10s. The mounting table 14 is configured to support a substrate W in the chamber 10, i.e., in the internal space 10s.

[0015] The mounting table 14 includes a lower electrode 18 and an electrostatic chuck 20 according to an exemplary embodiment. The mounting table 14 may further include an electrode plate 16. The electrode plate 16 is made of a conductor such as aluminum and has a substantially disk-like shape. The lower electrode 18 is provided on the electrode plate 16. The lower electrode 18 is made of a conductor such as aluminum (Al) or titanium (Ti) and has a substantially disk-like shape. The lower electrode 18 is electrically connected to the electrode plate 16. The outer peripheral surface of the lower electrode 18 and the outer peripheral surface of the electrode plate 16 are surrounded by a support 13. The electrode plate 16 and the lower electrode 18 are an example of a base that supports the electrostatic chuck 20.

[0016] The electrostatic chuck 20 is disposed on the lower electrode 18. The edge of the electrostatic chuck 20 and an edge ring 26 are surrounded by member 15. The electrostatic chuck 20 supports a substrate W and the edge ring 26 according to one exemplary embodiment.

[0017] The substrate W has, for example, a disk shape and is placed on the electrostatic chuck 20. The edge ring 26 is mounted on the electrostatic chuck 20 so as to surround the edge of the substrate W. An outer peripheral portion of the edge ring 26 may extend on the member 15. The edge ring 26 is a member having an annular shape. The edge ring 26 may be made of, but is not limited to, silicon, silicon carbide, or quartz. The edge ring 26 is also called a focus ring.

[0018] A flow path 18f is provided inside the lower electrode 18. A heat exchange medium (e.g., a refrigerant) is supplied to the flow path 18f from a chiller unit 22 provided outside the chamber 10 via a pipe 22a. The heat exchange medium supplied to the flow path 18f is returned to the chiller unit 22 via a pipe 22b. In the plasma processing apparatus 1, the temperature of the substrate W placed on the electrostatic chuck 20 is adjusted by heat exchange between the heat exchange medium and the lower electrode 18.

[0019] The plasma processing apparatus 1 is provided with a gas supply line 24. The gas supply line 24 supplies a heat transfer gas (for example, He gas) from a heat transfer gas supply mechanism to between the upper surface of the electrostatic chuck 20 and the lower surface of the substrate W.

[0020] The plasma processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is provided above the mounting table 14. The upper electrode 30 is supported on the upper part of the chamber body 12 via a member 32. The member 32 is made of an insulating material. The upper electrode 30 and the member 32 close the upper opening of the chamber body 12.

[0021] The upper electrode 30 may include a top plate 34 and a support 36. The bottom surface of the top plate 34 is the bottom surface on the side of the internal space 10s and defines the internal space 10s. The top plate 34 may be formed of a low-resistance conductor or semiconductor that generates little Joule heat. A plurality of gas discharge holes 34a are formed in the top plate 34. The plurality of gas discharge holes 34a penetrate the top plate 34 in the plate thickness direction.

[0022] The support 36 detachably supports the top plate 34. The support 36 is made of a conductive material such as aluminum. A gas diffusion chamber 36a is provided inside the support 36. A plurality of gas holes 36b are formed in the support 36. The plurality of gas holes 36b extend downward from the gas diffusion chamber 36a. The plurality of gas holes 36b are connected to the plurality of gas discharge holes 34a, respectively. A gas inlet 36c is formed in the support 36. The gas inlet 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas inlet 36c.

[0023] A gas supply unit GS is connected to the gas supply pipe 38. The gas supply unit GS includes a gas source group 40, a valve group 41, a flow rate controller group 42, and a valve group 43. The gas source group 40 is connected to the gas supply pipe 38 via the valve group 41, the flow rate controller group 42, and the valve group 43. The gas source group 40 includes a plurality of gas sources. Each of the valve group 41 and the valve group 43 includes a plurality of opening and closing valves. The flow rate controller group 42 includes a plurality of flow rate controllers. Each of the plurality of flow rate controllers of the flow rate controller group 42 is a mass flow controller or a pressure control type flow rate controller. Each of the plurality of gas sources of the gas source group 40 is connected to the gas supply pipe 38 via a corresponding opening and closing valve of the valve group 41, a corresponding flow rate controller of the flow rate controller group 42, and a corresponding opening and closing valve of the valve group 43.

[0024] In the plasma processing apparatus 1, a shield 46 is detachably provided along the inner wall surface of the chamber body 12. The shield 46 is also provided on the outer periphery of the support part 13. The shield 46 prevents reaction products such as etching by-products from adhering to the chamber body 12. The shield 46 is formed, for example, by forming a corrosion-resistant film on the surface of a member made of aluminum. The corrosion-resistant film can be a film made of ceramics such as yttrium oxide.

[0025] A baffle plate 48 is provided between the support 13 and the side wall of the chamber body 12. The baffle plate 48 is formed by forming a corrosion-resistant film on the surface of a member made of, for example, aluminum. The corrosion-resistant film may be a film made of ceramics such as yttrium oxide. A plurality of through holes are formed in the baffle plate 48. An exhaust port 12e is provided below the baffle plate 48 and at the bottom of the chamber body 12. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52. The exhaust device 50 has a pressure adjustment valve and a vacuum pump such as a turbo molecular pump.

[0026] The plasma processing apparatus 1 includes a first high frequency power supply 61 that applies high frequency HF power for generating plasma. The first high frequency power supply 61 is configured to generate high frequency HF power in order to generate plasma from a gas in the chamber 10. The frequency of the high frequency HF is, for example, within a range of 27 MHz to 100 MHz.

[0027] The first high frequency power supply 61 is electrically connected to the lower electrode 18 via a matching box 63. The matching box 63 has a matching circuit. The matching circuit of the matching box 63 is configured to match the impedance of the load side (lower electrode side) of the first high frequency power supply 61 to the output impedance of the first high frequency power supply 61. In another embodiment, the first high frequency power supply 61 may be electrically connected to the upper electrode 30 via the matching box 63.

[0028] The plasma processing apparatus 1 may further include a second high frequency power supply 62 that applies high frequency LF power for attracting ions. The second high frequency power supply 62 is configured to generate high frequency LF power. The high frequency LF has a frequency suitable for attracting ions mainly to the substrate W, and is, for example, a frequency within a range of 400 kHz to 13.56 MHz. Alternatively, the high frequency LF may be a pulsed voltage having a rectangular waveform.

[0029] The second high frequency power supply 62 is electrically connected to the bias electrode 21 in the electrostatic chuck 20, which is connected to the power supply line 102, via a matching box 64. The matching box 64 has a matching circuit. The matching circuit of the matching box 64 is configured to match the impedance of the load side (lower electrode side) of the second high frequency power supply 62 to the output impedance of the second high frequency power supply 62.

[0030] The plasma processing apparatus 1 may further include a control unit 80. The control unit 80 may be a computer including a processor, a storage unit such as a memory, an input device, a display device, a signal input / output interface, and the like. The control unit 80 controls each unit of the plasma processing apparatus 1. In the control unit 80, an operator can use the input device to input commands and the like to manage the plasma processing apparatus 1. In addition, the control unit 80 can visualize and display the operating status of the plasma processing apparatus 1 using the display device. Furthermore, a control program and recipe data are stored in the storage unit of the control unit 80. The control program is executed by the processor of the control unit 80 to execute various processes in the plasma processing apparatus 1. The processor of the control unit 80 executes the control program and controls each unit of the plasma processing apparatus 1 according to the recipe data, whereby various processes, for example, a plasma processing method, are executed in the plasma processing apparatus 1.

[0031] [Placement table] The mounting table 14 according to one embodiment will be described in detail below. In the following description, Fig. 2 and Fig. 3 will be referred to in addition to Fig. 1. Fig. 2 is a diagram showing an example of the structure of the mounting table 14 according to one embodiment. Fig. 3 is a diagram showing an example of the connection between each electrode of the mounting table 14 according to one embodiment and a power source.

[0032] The electrostatic chuck 20 has a body, and includes a first region and a second region as shown in FIG. 2. The body of the electrostatic chuck 20 has a stepped shape on the outer periphery, and is made of alumina (Al 2 O 3 ), aluminum nitride (AlN), or other dielectric materials.

[0033] The first area is a substantially disk-shaped area. The first area has a first mounting surface 201 on which the substrate W is placed. The first area is configured to hold the substrate W placed on the first mounting surface 201. The diameter of the first area is smaller than the diameter of the substrate W.

[0034] The second region is an annular region. The second region shares a central axis (axis AX in FIG. 2) with the first region. The second region has a second mounting surface 202. The second region is integrally provided around the first region and is configured to support an edge ring 26 mounted on the second mounting surface 202 (see FIG. 1).

[0035] The dielectric material constituting the first region and the dielectric material constituting the second region may be the same. For example, the body of the electrostatic chuck 20 may be made of ceramics such as aluminum oxide or aluminum nitride. The electrostatic chuck 20 has a first mounting surface 201 and a second mounting surface 202 as mounting surfaces, the second mounting surface 202 of the second region being lower than the first mounting surface 201 of the first region, and the thickness of the first region being thicker than the thickness of the second region.

[0036] The electrostatic chuck 20 further includes an adsorption electrode 23. The adsorption electrode 23 is provided in the first region of the main body. The adsorption electrode 23 is connected to a DC power supply 20p via a switch 20s (see FIGS. 1 and 2). When a DC voltage from the DC power supply 20p is applied to the adsorption electrode 23, an electrostatic attractive force is generated between the first region of the main body and the substrate W. Due to the generated electrostatic attractive force, the substrate W is attracted to the first region of the main body and held by the first region.

[0037] The electrostatic chuck 20 further includes an adsorption electrode 27a and an adsorption electrode 27b (hereinafter, collectively referred to as adsorption electrodes 27). The adsorption electrodes 27a and 27b are provided in a second region of the main body. The adsorption electrodes 27a and 27b extend in a circumferential direction with respect to the central axis of the electrostatic chuck 20. The adsorption electrode 27b is provided outside the adsorption electrode 27a. As shown in FIG. 2, a DC power supply 20m is electrically connected to the adsorption electrode 27a via a switch 20n, and a DC power supply 20r is electrically connected to the adsorption electrode 27b via a switch 20t. DC voltages are applied to the adsorption electrodes 27a and 27b from the DC power supplies 20m and 20r, respectively, so that a potential difference is generated between the adsorption electrodes 27a and 27b. For example, the polarity of the DC voltage applied to the chucking electrode 27a from the DC power supply 20m may be opposite to the polarity of the DC voltage applied to the chucking electrode 27b from the DC power supply 20r. However, the chucking electrode 27 is not limited to being bipolar, and may be a unipolar electrode. When DC voltages are applied to the chucking electrodes 27a and 27b from the DC power supplies 20m and 20r, respectively, an electrostatic attraction is generated between the second region of the main body and the edge ring 26. Due to the generated electrostatic attraction, the edge ring 26 is attracted to the second region of the main body and held by the second region.

[0038] As shown in Fig. 3, the bias electrode 21 is provided below the first mounting surface 201 and below the chucking electrode 23. The bias electrode 25 is provided below the second mounting surface 202 and below the chucking electrodes 27a and 27b. The third high-frequency power supply 65 is electrically connected to the bias electrode 25, which is connected to the power supply line 112, via a matching box 66 (see Figs. 1 and 2). The matching box 66 has a matching circuit. The matching circuit of the matching box 66 is configured to match the impedance of the load side (lower electrode side) of the third high-frequency power supply 65 to the output impedance of the third high-frequency power supply 65.

[0039] The bias electrode 21 and the bias electrode 25 apply bias power for attracting ions. The bias power is applied by a DC voltage or a high-frequency voltage. In the example of FIG. 1 and FIG. 2, the bias electrode 25 applies bias power by a high-frequency power from the third high-frequency power supply 65, but the present invention is not limited to this, and the bias power may be applied by a DC voltage from a DC power supply. When the bias power is applied to the bias electrode 21, ions in the plasma are attracted toward the first region of the main body. This allows the process characteristics, such as the etching rate and the film formation rate, of the entire surface of the substrate W to be controlled. When the bias power is applied to the bias electrode 25, ions in the plasma are attracted toward the second region of the main body. This allows the process characteristics of the edge region of the substrate W to be controlled.

[0040] The bias electrode 21 and the bias electrode 25 are examples of electrodes that apply bias power and are arranged below the mounting surface of the electrostatic chuck 20. The bias electrode 21 is an example of a first electrode that is arranged below the first mounting surface 201, and the bias electrode 25 is an example of a second electrode that is arranged below the second mounting surface 202. The bias powers applied to the bias electrode 21 and the bias electrode 25 are controlled independently by the second high frequency power supply 62 and the third high frequency power supply 65, respectively. The electrode that applies the bias power may include at least either the bias electrode 21 or the bias electrode 25.

[0041] The adsorption electrode 23 in the first region is provided between the first mounting surface 201 and the bias electrode 21. The adsorption electrode 23 and the bias electrode 21 have a disk shape with approximately the same diameter. The adsorption electrode 27a and the adsorption electrode 27b in the second region are provided between the second mounting surface 202 and the bias electrode 25. The adsorption electrode 27a, the adsorption electrode 27b, and the bias electrode 21 have an annular shape. The radial widths of the adsorption electrodes 27a and 27b are approximately the same length, and the radial width of the bias electrode 21 is larger than the total radial width of the adsorption electrodes 27a and 27b. The adsorption electrode 23, the adsorption electrode 27a, and the adsorption electrode 27b are an example of an electrode for electrostatic adsorption disposed between the mounting surface of the electrostatic chuck 20 and an electrode that applies bias power. The electrode for electrostatic adsorption may include at least one of the adsorption electrode 23 and the adsorption electrode 27. As a result, at least one of the substrate W and the edge ring 26 is electrostatically adsorbed. Moreover, the electrode for applying bias power and the electrode for electrostatic attraction are disposed inside the same dielectric body.

[0042] The bias electrode 21, and the attraction electrodes 27a and 27b are disposed on the same plane of the electrostatic chuck 20. A thickness D1 from the first mounting surface 201 to the upper surface of the bias electrode 21 and a thickness D2 from the second mounting surface 202 to the upper surface of the bias electrode 25 shown in FIG.

[0043] When the high frequency LF is applied to the electrode plate 16, a potential difference is generated between the electrode plate 16 and the substrate W and between the electrode plate 16 and the edge ring 26 according to the electrostatic capacitance between the electrode plate 16 and the substrate W and the electrostatic capacitance between the electrode plate 16 and the edge ring 26. This causes ionization of the heat transfer gas supplied to the rear surface of the substrate W and the rear surface of the edge ring 26. As a result, abnormal discharge may occur on the rear surface of the substrate W and / or the rear surface of the edge ring 26. Therefore, in the mounting table 14 according to this embodiment, the bias electrode 21 and the bias electrode 25 are provided in the electrostatic chuck 20 to suppress discharge of the heat transfer gas. This allows high-power high frequency LF to be applied to the bias electrode 21 and the bias electrode 25.

[0044] [Contact pin] As shown in FIG. 2, the mounting table 14 has a contact pin 100 that electrically connects the bias electrode 21 and a power supply line 102 that applies bias power and is disposed below the bias electrode 21. The contact pin 100 has a tapered shape, and the area of ​​an upper surface 100a that connects with the bias electrode 21 is larger than the area of ​​a lower surface 100b that connects with the power supply line 102. The contact pin 100 is made of a conductive material. The contact pin 100 may be made of, for example, conductive ceramics. The power supply line 102 includes a metal terminal 103 at its tip, and the contact pin 100 connects the bias electrode 21 to the metal terminal 103 made of a metal material such as copper (Cu) or titanium (Ti). As a result, the power supply line 102 is provided inside the mounting table 14, and the power supply line 102 (metal terminal 103) can be exposed to the lower surface of the mounting table 14 (the lower surface 182 of the lower electrode 18). As a result, high frequency LF power from the second high frequency power supply 62 is applied to the bias electrode 21 via the power supply line 102 (metal terminal 103) and the contact pin 100.

[0045] The mounting table 14 also has a contact pin 110 that electrically connects the bias electrode 25 to a power supply line 112 that applies bias power and is disposed below the bias electrode 25. The contact pin 110 has a tapered shape, and the area of ​​an upper surface 110a that connects to the bias electrode 25 is larger than the area of ​​a lower surface 110b that connects to the power supply line 102. The contact pin 110 is made of a conductive material. The contact pin 110 may be made of, for example, conductive ceramics. The power supply line 112 includes a metal terminal 113 at its tip, and the contact pin 110 connects the bias electrode 25 to the metal terminal 113 made of a metal material. As a result, the power supply line 112 is provided inside the mounting table 14, and the power supply line 112 (metal terminal 113) can be exposed to the lower surface of the mounting table 14 (the lower surface 182 of the lower electrode 18). As a result, high frequency power from the third high frequency power supply 65 is applied to the bias electrode 25 via the power supply line 112 (metal terminal 113) and the contact pin 110.

[0046] The contact pins 100 and 110 are an example of power supply terminals that electrically connect an electrode that applies bias power to a power supply line.

[0047] The features of the contact pin 100 according to the present embodiment shown in Fig. 4(b) will be described while comparing the shape of the contact pin 300 shown in Fig. 4(a) with that of the conventional contact pin 300. Note that the contact pin 110 has the same features as the contact pin 100, so the description thereof will be omitted.

[0048] Conventional contact pin 300 has a cylindrical shape, and an area S1 of its upper surface 300a is equal to an area S2 of its lower surface 300b. When high frequency LF bias power is supplied from second high frequency power supply 62, a relatively large current flows through contact pin 300 in a short time. This generates Joule heat, causing contact pin 300 to heat up. As a result, the temperature of the region of substrate W located above contact pin 300 and corresponding to contact pin 300 becomes higher than other regions, which may cause a problem that the in-plane temperature distribution of substrate W cannot be controlled uniformly.

[0049] In order to solve this problem, the contact pin 100 according to this embodiment has a tapered shape, and the area S1 of the upper surface 100a is larger than the area S2 of the lower surface 100b, as shown in Fig. 4(b). By increasing the area S1 of the upper surface 100a of the contact pin 100, the electrical resistance at the upper surface 100a can be reduced, and the heat generated by the contact pin 100 can be reduced.

[0050] In addition, by reducing the area S2 of the lower surface 100b of the contact pin 100, the diameter of the through hole for passing the metal terminal 103 through the lower electrode 18 can be reduced. That is, the contact pin 100 is formed of a conductive material. For this reason, it is necessary to insulate the contact pin 100 from the metal lower electrode 18. Therefore, the sleeve 101, 111 formed of an insulating material is inserted into the through hole of the lower electrode 18. If the diameter of the through hole is large, the distance P between the central axis (axis AX in FIG. 2) and the upper end of the sleeve 101 becomes long. If the distance P becomes long, a circular insulating material with a diameter of 2P is exposed on the upper surface 181 of the lower electrode 18, and it becomes difficult to control the temperature, such as cooling, by the flow path 18f for insulating materials such as ceramics. For the above reasons, the area S2 of the lower surface 100b of the contact pin 100 is reduced in order to suppress the temperature of the electrostatic chuck 20 from becoming non-uniform at the upper part of the through hole. This makes it possible to minimize the area where the insulating material is exposed on the upper surface 181 of the lower electrode 18, thereby improving the in-plane uniformity of the substrate temperature.

[0051] In particular, a relatively large current of about several amperes to 10 amperes flows instantaneously through bias electrode 21 due to a discharge phenomenon with the generated plasma. During plasma processing, an AC current flows through bias electrode 21, and the AC current is repeatedly turned on and off in accordance with the frequency of the high frequency LF. When the AC current changes from on to off or from off to on, a relatively large current flows instantaneously, periodically generating Joule heat, causing contact pin 300 to heat up.

[0052] On the other hand, a direct current flows through the chucking electrode 23, the chucking electrode 27a, and the chucking electrode 27b, and the current flowing is not large compared to the high frequency current flowing through the bias electrode 21. Therefore, the contact pins 100 and 110 according to this embodiment are preferably used particularly as power supply terminals for the bias electrode 21, and do not need to be used as power supply terminals for the chucking electrode 23, the chucking electrode 27a, and the chucking electrode 27b.

[0053] The contact pins 100 and 110 are not limited to a tapered shape. For example, as shown in FIG. 4(c), the contact pins 100 and 110 may have a stepped side. This also makes the area S1 of the upper surface 100a larger than the area S2 of the lower surface 100b. By increasing the area S1 of the upper surface 100a of the contact pin 100, the electrical resistance on the upper surface 100a can be reduced, and the heat generated by the contact pin 100 can be reduced. The same applies to the contact pin 110.

[0054] 5, a metal plate 104 may be interposed between the contact pin 100 and the metal terminal 103. The metal plate 104 is made of a conductive material such as aluminum. In this case, the metal plate 104 is bonded (soldered) to the lower surface of the contact pin 100 with a conductive adhesive, and the metal terminal 103 is pressed against the metal plate 104. The same applies to the contact pin 110.

[0055] In the contact structure of Fig. 4, metal terminal 103 is pressed directly against bottom surface 100b of contact pin 100. This increases contact resistance at the interface between contact pin 100 and metal terminal 103. On the other hand, in the contact structure of Fig. 5, contact pin 100 and metal terminal 103 contact each other via metal plate 104. This reduces the contact resistance in contact pin 100, and reduces heat generation in contact pin 100.

[0056] [Each electrode] Next, each electrode embedded in the electrostatic chuck 20 will be described with reference to Fig. 6. Fig. 6(a) is a diagram showing an AA cross section of the electrostatic chuck 20 shown in Fig. 2. Fig. 6(b) is a diagram showing a BB cross section of the electrostatic chuck 20 shown in Fig. 2. Fig. 6(c) is a diagram showing a CC cross section of the electrostatic chuck 20 shown in Fig. 2.

[0057] 6(a), a disk-shaped attraction electrode 23 is provided in the first region. The attraction electrode 23 is a film-like or sheet-like electrode.

[0058] 6B, the second region is provided with annular chucking electrodes 27a and 27b. Each of the chucking electrodes 27a and 27b is a film-like or sheet-like electrode. The chucking electrode 27b is provided on the outer side of the chucking electrode 27a.

[0059] In addition, a disk-shaped bias electrode 21 is provided in the first region. The bias electrode 21 is in a sheet or mesh shape. The bias electrode 21 is made of conductive ceramics containing ceramics and metal, which are used in the electrostatic chuck 20.

[0060] The material used for bias electrode 21 is not limited to this, but may be a conductive ceramic that is a combination of a high melting point metal material such as tungsten, tantalum, molybdenum, or the like and the ceramic that constitutes electrostatic chuck 20. Bias electrode 21 may have a resistance value equal to or less than a predetermined value (e.g., 0.1 Ω·cm). Bias electrode 21 contacts contact pin 100 at the center.

[0061] Referring to the CC cross section of FIG. 6(c), a ring-shaped bias electrode 25 is provided in the second region. The bias electrode 25 is a film-like or sheet-like electrode. The bias electrode 25 has power supply terminals 25a arranged evenly in the circumferential direction. The power supply terminals 25a are connected to the contact pins 110. As a result, the contact pins 110 connected to the bias electrode 25 are arranged at equal intervals in the circumferential direction of the edge ring 26. As a result, the impedance of the high frequency LF can be made uniform in the circumferential direction, and the bias of the high frequency LF in the circumferential direction can be reduced.

[0062] The bias electrode 25 has a sheet or mesh shape and is made of the same conductive ceramic material used in the electrostatic chuck 20, which contains ceramic and metal.

[0063] The bias electrode 25 has a resistance value equal to or less than a predetermined value (for example, 0.1 Ω·cm). The material used for the bias electrode 25 is not limited to this, but may be a conductive ceramic that combines a high melting point metal material such as tungsten, tantalum, or molybdenum with the ceramics that constitute the electrostatic chuck.

[0064] Furthermore, bias electrode 25 may be made of a metal mesh rather than a sheet. This can reduce the difference in contraction between bias electrode 25 and electrostatic chuck 20 caused by the difference in linear expansion coefficient between bias electrode 25 and electrostatic chuck 20 due to heat input from plasma, and can reduce friction between bias electrode 25 and electrostatic chuck 20.

[0065] As described above, according to the mounting table 14 and plasma processing apparatus 1 of this embodiment, by providing the bias electrodes 21, 25 within the electrostatic chuck 20, discharge of the heat transfer gas supplied between the lower surface of the substrate W and the upper surface of the electrostatic chuck 20 can be suppressed.

[0066] The contact pin electrically connects the electrode for applying bias power to the power supply line, and has a surface area connected to the electrode that is larger than the surface area connected to the power supply line, thereby suppressing heat generation in and around the contact pin and improving the in-plane temperature uniformity of the substrate.

[0067] The mounting table and plasma processing apparatus according to the present disclosure should be considered as illustrative in all respects and not restrictive. The above-described embodiment can be modified and improved in various forms without departing from the scope and spirit of the appended claims. The matters described in the above-described embodiments can be configured in other ways without any contradiction, and can be combined without any contradiction.

[0068] The plasma processing apparatus of the present disclosure can be any type of apparatus, such as an atomic layer deposition (ALD) apparatus, a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), a radial line slot antenna (RLSA), an electron cyclotron resonance plasma (ECR), or a helicon wave plasma (HWP). The plasma processing apparatus may be any apparatus that performs a predetermined process (e.g., an etching process, a film formation process, etc.) on a substrate.

[0069] The following is a summary: [Appendix 1] A mounting surface; an electrode for applying bias power that is disposed below the mounting surface; A power supply line for applying bias power, the power supply line being disposed below the electrode; a mounting table including a power supply terminal that electrically connects the electrode and the power supply line, the power supply terminal having a surface area that connects to the electrode larger than a surface area that connects to the power supply line. [Appendix 2] the mounting surface includes a first mounting surface on which a substrate is mounted and a second mounting surface on which an edge ring is mounted, the edge ring being disposed around the substrate; The electrode is a first electrode disposed below the first mounting surface; A second electrode disposed below the second mounting surface. 2. The mounting table according to claim 1. [Appendix 3] the power supply terminals connected to the second electrodes are disposed at equal intervals in the circumferential direction of the edge ring; Attachment 2. A mounting table as described in appendix 2. [Appendix 4] an electrode for electrostatic attraction is disposed between the mounting surface and the electrode; At least one of the substrate and the edge ring is electrostatically attracted. 4. The mounting table according to claim 2 or 3. [Appendix 5] The electrode and the electrode for electrostatic attraction are disposed inside the same dielectric body. Attachment 4. A mounting table as described in appendix 4. [Appendix 6] an electrode plate is disposed between the power supply terminal and the power supply line; The mounting table according to any one of claims 1 to 5. [Appendix 7] A plasma processing apparatus having a chamber and a stage on which a substrate is placed within the chamber, The mounting table is A mounting surface; an electrode for applying bias power that is disposed below the mounting surface; A power supply line for applying bias power, the power supply line being disposed below the electrode; A plasma processing apparatus comprising: a power supply terminal electrically connecting the electrode and the power supply line, the power supply terminal having a surface area connected to the electrode larger than a surface area connected to the power supply line. [Explanation of symbols]

[0070] Reference Signs List 1...plasma processing apparatus, 10...chamber, 14...mounting table, 16...electrode plate, 18...lower electrode, 20...electrostatic chuck, 21, 25...bias electrode, 26...edge ring, 23, 27a, 27b...chucking electrode, 61...first high frequency power supply, 62...second high frequency power supply, 65...third high frequency power supply, 100, 110...contact pin, 101, 111...sleeve, 102, 112...power supply line, 104...metal plate, 201...first mounting surface, 202...second mounting surface, W...substrate

Claims

1. a first mounting surface on which a substrate is mounted; a second mounting surface for mounting an edge ring disposed around the periphery of the substrate; a first chucking electrode disposed below the first placement surface; a first bias electrode disposed below the first attraction electrode; a second chucking electrode disposed below the second placement surface; a second bias electrode disposed below the second attraction electrode; the first bias electrode and the second attraction electrode are disposed in the same plane; Mounting stand.

2. the first attraction electrode and the first bias electrode are disposed within the same dielectric body; The mounting table according to claim 1 .

3. the second attraction electrode and the second bias electrode are disposed within the same dielectric body; The mounting table according to claim 1 or 2.

4. at least one power supply terminal having an upper surface and a lower surface and electrically connecting to at least one of the first bias electrode and the second bias electrode; the at least one power supply terminal has an upper surface area equal to or larger than an lower surface area connected to a power supply line; The mounting table according to claim 1 .

5. an area of ​​the lower surface of the at least one power supply terminal is equal to or greater than an area of ​​an upper surface of the power supply line; The mounting table according to claim 4 .

6. the at least one power supply terminal is electrically connected to a center of the first bias electrode; The mounting table according to claim 4 or 5.

7. the at least one power supply terminal includes a plurality of power supply terminals, the plurality of power supply terminals being arranged in a circumferential direction and electrically connected to the second bias electrode; The mounting table according to any one of claims 4 to 6.

8. the plurality of power supply terminals are arranged at equal intervals in a circumferential direction and electrically connected to the second bias electrode; The mounting table according to claim 7 .

9. The power supply terminal has a tapered shape. The mounting table according to any one of claims 4 to 8.

10. The power supply terminal has an inverted convex shape. The mounting table according to any one of claims 4 to 8.

11. A plasma processing apparatus having a chamber and a stage on which a substrate is placed within the chamber, The mounting table is a first mounting surface on which a substrate is mounted; a second mounting surface for mounting an edge ring disposed around the periphery of the substrate; a first chucking electrode disposed below the first placement surface; a first bias electrode disposed below the first attraction electrode; a second chucking electrode disposed below the second placement surface; a second bias electrode disposed below the second attraction electrode; the first bias electrode and the second attraction electrode are disposed in the same plane; Plasma processing equipment.

12. the first attraction electrode and the first bias electrode are disposed within the same dielectric body; The plasma processing apparatus according to claim 11 .

13. the second attraction electrode and the second bias electrode are disposed within the same dielectric body; The plasma processing apparatus according to claim 11 or 12.

14. at least one power supply terminal having an upper surface and a lower surface and electrically connecting to at least one of the first bias electrode and the second bias electrode; the at least one power supply terminal has an upper surface area equal to or larger than an lower surface area connected to a power supply line; The plasma processing apparatus according to any one of claims 11 to 13.

15. an area of ​​the lower surface of the at least one power supply terminal is equal to or greater than an area of ​​an upper surface of the power supply line; The plasma processing apparatus according to claim 14.

16. the at least one power supply terminal is electrically connected to a center of the first bias electrode; The plasma processing apparatus according to claim 14 or 15.

17. the at least one power supply terminal includes a plurality of power supply terminals, the plurality of power supply terminals being arranged in a circumferential direction and electrically connected to the second bias electrode; The plasma processing apparatus according to any one of claims 14 to 16.

18. the plurality of power supply terminals are arranged at equal intervals in a circumferential direction and electrically connected to the second bias electrode; The plasma processing apparatus according to claim 17 .

19. The power supply terminal has a tapered shape. The plasma processing apparatus according to any one of claims 14 to 18.

20. The power supply terminal has an inverted convex shape. The plasma processing apparatus according to any one of claims 14 to 18.

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