Quantum cascade laser element and quantum cascade laser device

Abstract

To provide a quantum cascade laser element and a quantum cascade laser device in which the heat dissipation can be improved and the stability can be improved.SOLUTION: A quantum cascade laser element 1 includes: a semiconductor substrate 2; a semiconductor mesa 4 formed on the semiconductor substrate 2 so as to extend along an optical waveguide direction; an embedded layer 5 formed to have the semiconductor mesa 4 therebetween along a width direction of the semiconductor substrate 2; an upper clad layer 6 formed on the semiconductor mesa 4 and the embedded layer 5; and a metal layer 81 formed on the upper clad layer 6. On a surface 6a of the upper clad layer 6 on the opposite side to the semiconductor substrate 2, a pair of groove parts 68 extending along the optical waveguide direction are formed. The pair of groove parts 68 are disposed in two regions P2 on the outside in a case where the upper clad layer 6 is equally divided into four regions P1, P2 in the width direction of the semiconductor substrate 2. The metal layer 81 exists inside the pair of groove parts 68.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a quantum cascade laser element and a quantum cascade laser device. [Background technology]

[0002] A known quantum cascade laser element includes a semiconductor substrate, a semiconductor stack formed on the semiconductor substrate so as to have a ridge portion, a current blocking layer formed over the ridge portion and the semiconductor substrate, an insulating layer formed on the current blocking layer, and a metal layer formed over the top surface of the ridge portion and the insulating layer (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-98262 A Summary of the Invention [Problem to be solved by the invention]

[0004] The quantum cascade laser element as described above is required to have improved heat dissipation and improved stability as a laser element. Therefore, an object of the present invention is to provide a quantum cascade laser element and a quantum cascade laser device that can achieve improved heat dissipation and improved stability. [Means for solving the problem]

[0005] The quantum cascade laser element of the present invention comprises a semiconductor substrate, a semiconductor mesa including an active layer having a quantum cascade structure and formed on the semiconductor substrate so as to extend along an optical waveguide direction, a buried layer formed so as to sandwich the semiconductor mesa along the width direction of the semiconductor substrate, a cladding layer formed over the semiconductor mesa and the buried layer, and a metal layer formed on the cladding layer, and a pair of grooves extending along the optical waveguide direction are formed on the surface of the cladding layer opposite the semiconductor substrate, the pair of grooves being located in two outer regions respectively when the cladding layer is equally divided into four regions in the width direction of the semiconductor substrate, and the metal layer penetrates the pair of grooves.

[0006] This quantum cascade laser element includes a buried layer formed to sandwich the semiconductor mesa along the width direction of the semiconductor substrate. This allows the heat generated in the active layer to be effectively dissipated. In addition, a pair of grooves extending along the optical waveguide direction is formed on the surface of the cladding layer opposite to the semiconductor substrate, and the pair of grooves are arranged in two outer regions when the cladding layer is equally divided into four regions in the width direction of the semiconductor substrate, and a metal layer enters each groove. By the metal layer entering each groove, the bonding strength between the metal layer and the cladding layer can be improved. As a result, peeling or deterioration of the metal layer can be suppressed, and the stability of the laser element can be improved. In particular, by the metal layer entering each groove in the outer region where peeling or the like is likely to occur in the metal layer, peeling or the like of the metal layer can be effectively suppressed. In addition, by arranging the pair of grooves in the outer region, the width of the portion between the pair of grooves in the cladding layer can be formed wide. As a result, the heat dissipation can be further improved. Therefore, according to this quantum cascade laser element, it is possible to improve the heat dissipation property and the stability.

[0007] The pair of grooves may reach the buried layer, in which case peeling of the metal layer can be more effectively suppressed.

[0008] The quantum cascade laser element of the present invention may further include a plating layer formed on the metal layer, and a recess may be formed on the surface of the plating layer opposite to the semiconductor substrate. In this case, when the quantum cascade laser element is bonded to the support member with a bonding material, the recess can function as a relief for the bonding material, and the bonding material can be prevented from creeping up to the side surface of the quantum cascade laser element.

[0009] The recesses may be provided in pairs, and the pair of recesses may overlap with the pair of grooves when viewed from the thickness direction of the semiconductor substrate. Such recesses can be easily formed by forming a metal layer and a plating layer on the cladding layer having the grooves.

[0010] The quantum cascade laser element of the present invention further includes a dielectric layer disposed between the cladding layer and the metal layer, and the dielectric layer has an opening formed therein to expose the cladding layer from the dielectric layer in a region overlapping with the semiconductor mesa when viewed from the thickness direction of the semiconductor substrate, and the metal layer may be in contact with the cladding layer through the opening. In this case, the dielectric layer can improve the bonding strength between the metal layer and the cladding layer, and can further suppress peeling of the metal layer.

[0011] The dielectric layer may extend into the pair of grooves, which can further prevent the metal layer from peeling off.

[0012] The width of the opening in the width direction of the semiconductor substrate may be at least twice the width of the semiconductor mesa, which can increase the area where the metal layer contacts the cladding layer, thereby further improving heat dissipation.

[0013] The width of the opening in the width direction of the semiconductor substrate may be 10 times or more the thickness of the cladding layer, in which case the area where the metal layer contacts the cladding layer can be made wider, thereby further improving heat dissipation.

[0014] The quantum cascade laser element of the present invention may further include a metal wire electrically connected to the metal layer, and the connection position between the metal layer and the wire may overlap with the dielectric layer when viewed from the thickness direction of the semiconductor substrate. In this case, peeling or the like of the metal layer due to tensile stress acting on the metal layer from the wire can be suppressed.

[0015] The cladding layer may be thinner in a second region located outside the first region in the width direction of the semiconductor substrate than the first region, at least a part of which overlaps with the semiconductor mesa when viewed from the thickness direction of the semiconductor substrate, and the metal layer may extend across the first and second regions. In a quantum cascade laser element, in order to stably output fundamental mode light having an intensity peak at the center of the ridge in the width direction, it is required to suppress oscillation of higher mode light having intensity peaks on both sides of the center. When a buried layer is provided sandwiching the semiconductor mesa along the width direction, heat dissipation can be improved, but the light confinement effect of the buried layer is weak, so that higher mode light is likely to oscillate. In this regard, in this quantum cascade laser element, the cladding layer is thinner in a second region located outside the first region in the width direction of the semiconductor substrate than the first region, at least a part of which overlaps with the semiconductor mesa when viewed from the thickness direction of the semiconductor substrate, and the metal layer extends across the first and second regions. This allows the metal layer formed so as to reach the second region to absorb light in higher-order modes, thereby suppressing oscillation in higher-order modes.

[0016] The width of the cladding layer in the first region may be equal to or greater than the width of the semiconductor mesa, which can suppress oscillation in higher modes while suppressing loss in the fundamental mode.

[0017] The width of the cladding layer in the first region may be four times or less the width of the semiconductor mesa, in which case oscillation in higher modes can be effectively suppressed.

[0018] The thickness of the cladding layer in the second region may be half or less of the thickness of the cladding layer in the first region, in which case oscillation in higher modes can be suppressed even more effectively.

[0019] The surface of the cladding layer opposite to the semiconductor substrate may include an inclined surface formed at the boundary between the first region and the second region, and the inclined surface may be inclined outwardly as it approaches the semiconductor substrate when viewed from the optical waveguide direction. The inclined surface may be curved so as to be convex toward the active layer when viewed from the optical waveguide direction. In these cases, the uniformity of the metal layer formed on the inclined surface can be improved, and variations in the oscillation suppression characteristics of higher modes can be suppressed.

[0020] The cladding layer may have a uniform thickness except for the portion where the pair of grooves are formed, in which case heat dissipation can be further improved.

[0021] A quantum cascade laser device according to the present invention includes the quantum cascade laser element and a drive unit that drives the quantum cascade laser element. In this quantum cascade laser device, it is possible to improve heat dissipation and stability.

[0022] The quantum cascade laser device of the present invention further comprises a support member having an electrode pad and supporting the quantum cascade laser element, and a bonding material bonding the support member and the quantum cascade laser element, the quantum cascade laser element having a plating layer formed on a metal layer, a recess formed on the surface of the plating layer opposite to the semiconductor substrate, and the bonding material bonding the electrode pad and the plating layer in a state in which the semiconductor mesa is located on the support member side relative to the semiconductor substrate and the bonding material enters the recess. In this case, the recess functions as a relief portion for the bonding material, thereby suppressing the bonding material from creeping up to the side surface of the quantum cascade laser element.

[0023] The driving unit may drive the quantum cascade laser element to continuously oscillate the laser light. In this case, a lot of heat is generated in the active layer. In this respect, since the quantum cascade laser device has improved heat dissipation as described above, the heat generated in the active layer can be dissipated well. Effect of the Invention

[0024] According to the present invention, it is possible to provide a quantum cascade laser element and a quantum cascade laser device that can achieve improved heat dissipation and improved stability. [Brief description of the drawings]

[0025] [Figure 1] 1 is a cross-sectional view of a quantum cascade laser device according to an embodiment. [Diagram 2] FIG. 2 is a cross-sectional view taken along line II-II in FIG. [Diagram 3] 5(a) and 5(b) are diagrams illustrating a method for manufacturing a quantum cascade laser device. [Figure 4] 5(a) and 5(b) are diagrams illustrating a method for manufacturing a quantum cascade laser device. [Diagram 5] 5(a) and 5(b) are diagrams illustrating a method for manufacturing a quantum cascade laser device. [Figure 6] 5(a) and 5(b) are diagrams illustrating a method for manufacturing a quantum cascade laser device. [Figure 7] FIG. 1 is a cross-sectional view of a quantum cascade laser device. [Figure 8] 1 is a graph showing an example of an electric field intensity distribution in a quantum cascade laser element. [Figure 9] FIG. 1A is a diagram showing an example of the spread of a fundamental mode, and FIG. 1B is a diagram showing an example of the spread of a first-order mode. [Figure 10] FIG. 11 is a cross-sectional view of a quantum cascade laser element according to a modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding elements are designated by the same reference numerals, and duplicated description will be omitted. [Quantum cascade laser element configuration]

[0027] 1 and 2, the quantum cascade laser device 1 includes a semiconductor substrate 2, a lower cladding layer 3, a semiconductor mesa 4, a buried layer 5, an upper cladding layer 6, a dielectric layer 7, a first electrode 8, and a second electrode 9. The semiconductor substrate 2 is, for example, a rectangular plate-shaped S-doped InP single crystal substrate. As an example, the length of the semiconductor substrate 2 is about 2 mm, the width of the semiconductor substrate 2 is about 500 μm, and the thickness of the semiconductor substrate 2 is about 100 μm.

[0028] In the following description, the width direction of the semiconductor substrate 2 is referred to as the X-axis direction, the length direction of the semiconductor substrate 2 is referred to as the Y-axis direction, and the thickness direction of the semiconductor substrate 2 is referred to as the Z-axis direction. In the Z-axis direction, the side where the semiconductor mesa 4 is located relative to the semiconductor substrate 2 is referred to as the first side S1, and the side where the semiconductor substrate 2 is located relative to the semiconductor mesa 4 is referred to as the second side S2. When viewed from the Y-axis direction, the quantum cascade laser element 1 is configured to be axisymmetric with respect to a center line that passes through the center of the quantum cascade laser element 1 and is parallel to the Z-axis direction.

[0029] The lower cladding layer 3 is formed on the surface 2a of the first side S1 of the semiconductor substrate 2. The lower cladding layer 3 has a main body 31 and a protruding portion 32 protruding from the main body 31 to the first side S1. The semiconductor mesa 4 includes an active layer 41 having a quantum cascade structure, and extends along the Y-axis direction. The semiconductor mesa 4 is formed on the surface 2a of the semiconductor substrate 2 via the lower cladding layer 3. In this example, the semiconductor mesa 4 is formed on the protruding portion 32 of the lower cladding layer 3.

[0030] The semiconductor mesa 4 has a top surface 4a and a pair of side surfaces 4b. The top surface 4a is the surface of the first side S1 of the semiconductor mesa 4. The pair of side surfaces 4b are the surfaces on both sides of the semiconductor mesa 4 in the X-axis direction. In this example, each of the top surface 4a and the side surfaces 4b is a flat surface. When viewed from the Y-axis direction, the pair of side surfaces 4b are inclined so as to approach each other as they move away from the semiconductor substrate 2 (towards the first side S1).

[0031] The buried layer 5 is formed on the surface 31a of the first side S1 of the main body 31 of the lower cladding layer 3, and sandwiches the protruding portion 32 of the lower cladding layer 3 and the semiconductor mesa 4 along the X-axis direction. That is, the buried layer 5 is provided on both sides of the protruding portion 32 and the semiconductor mesa 4 in the X-axis direction, and buries the protruding portion 32 and the semiconductor mesa 4. The buried layer 5 is in contact with the entire surfaces of each side of the protruding portion 32 and each side 4b of the semiconductor mesa 4. The surface 5a of the first side S1 of the buried layer 5 is located on the same plane (is flush) with the top surface 4a of the semiconductor mesa 4. The thickness of the buried layer 5 is, for example, about 2 μm.

[0032] The upper cladding layer 6 is formed over the top surface 4a of the semiconductor mesa 4 and the surface 5a of the buried layer 5. Although not shown in the figure, a lower guide layer is disposed between the lower cladding layer 3 and the active layer 41, and an upper guide layer is disposed between the upper cladding layer 6 and the active layer 41. The upper guide layer has a diffraction grating structure that functions as a distributed feedback (DFB) structure.

[0033] The semiconductor mesa 4 is composed of a lower guide layer, an active layer 41, and an upper guide layer. The width of the semiconductor mesa 4 in the X-axis direction is narrower than the width of the semiconductor substrate 2 in the X-axis direction. The length of the semiconductor mesa 4 in the Y-axis direction is equal to the length of the semiconductor substrate 2 in the Y-axis direction. As an example, the length of the semiconductor mesa 4 is about 2 mm, the width of the semiconductor mesa 4 is about 5 to 6 μm, and the thickness of the semiconductor mesa 4 is about 2 μm. The semiconductor mesa 4 is located in the center of the semiconductor substrate 2 in the X-axis direction.

[0034] The active layer 41 has, for example, an InGaAs / InAlAs multiple quantum well structure. The active layer 41 is configured to oscillate laser light having a predetermined central wavelength. The central wavelength is, for example, any value between 4 μm and 11 μm, and may be any value between 4 μm and 6 μm. Each of the lower cladding layer 3 and the upper cladding layer 6 is, for example, a Si-doped InP layer. Each of the lower guide layer and the upper guide layer is, for example, a Si-doped InGaAs layer. The buried layer 5 is, for example, a semiconductor layer made of an Fe-doped InP layer.

[0035] The semiconductor mesa 4 has a first end face 4c and a second end face 4d which are both end faces in the optical waveguide direction A (FIG. 2). The optical waveguide direction A is parallel to the Y-axis direction which is the extension direction of the semiconductor mesa 4. The first end face 4c and the second end face 4d function as light emitting end faces. The first end face 4c and the second end face 4d are located on the same plane as both end faces of the semiconductor substrate 2 in the Y-axis direction.

[0036] The upper cladding layer 6 has a first portion 61 located in the first region (inner region) R1 and a pair of second portions 62 located in the second region (outer region) R2. When viewed from the Z-axis direction, a central portion of the first region R1 overlaps with the semiconductor mesa 4. Each second region R2 is located outside (toward the outer edge of the semiconductor substrate 2) the first region R1 in the X-axis direction. Each second region R2 is continuous with the first region R1. The first portion 61 is the upper cladding layer 6 in the first region R1, and the second portion 62 is the upper cladding layer 6 in the second region R2. The first portion 61 and the second portion 62 are integrally formed with each other. In the X-axis direction, the second portion 62 (upper cladding layer 6) reaches an end face of the quantum cascade laser device 1.

[0037] The thickness T2 of the second portion 62 is thinner than the thickness T1 of the first portion 61. That is, the thickness of the upper cladding layer 6 is thinner in the second region R2 than in the first region R1. In this example, the thickness T2 is half or less of the thickness T1. The first portion 61 is a thick portion thicker than the second portion 62, and the second portion 62 is a thin portion thinner than the first portion 61. The thickness T1 of the first portion 61 is the maximum thickness of the first portion 61 in the Z-axis direction, and the thickness T2 of the second portion 62 is the maximum thickness of the second portion 62 in the Z-axis direction. When the connection portion 63 whose thickness changes is formed as in this example, the thickness T1 of the first portion 61 is the maximum thickness of the portion other than the connection portion 63, and the thickness T2 of the second portion 62 is the maximum thickness of the portion other than the connection portion 63. As an example, the thickness T1 of the first portion 61 is about 3.5 μm, and the thickness T2 of the second portion 62 is 1.0 μm or less.

[0038] Each second portion 62 has a connection portion 63 formed at the boundary between the second portion 62 and the first portion 61. The thickness of the connection portion 63 in the Z-axis direction increases toward the first portion 61. As a result, the surface of the first side S1 of the connection portion 63 forms an inclined surface 63a. When viewed from the Y-axis direction, the inclined surface 63a is inclined outwardly as it approaches the semiconductor substrate 2 (toward the second side S2). Furthermore, when viewed from the Y-axis direction, the inclined surface 63a is curved so as to be convex toward the active layer 41.

[0039] The width W1 of the first portion 61 is equal to or larger than the width W2 of the semiconductor mesa 4, and is equal to or smaller than four times the width W2 of the semiconductor mesa 4. The width W1 of the first portion 61 is the width of the first portion 61 in the X-axis direction, and is the width at the end of the first side S1 (top surface 61a of the first portion 61). The width W2 of the semiconductor mesa 4 is the width of the semiconductor mesa 4 in the X-axis direction, and is the width at the end of the first side S1 (top surface 4a of the semiconductor mesa 4). As an example, the width W1 of the first portion 61 is about 12 μm, and the width W2 of the semiconductor mesa 4 is about 5 μm.

[0040] A pair of grooves (trench) 68 extending along the Y-axis direction is formed on the surface 6a of the first side S1 of the upper cladding layer 6. More specifically, each groove 68 is formed in the second portion 62 of the upper cladding layer 6. The pair of grooves 68 are disposed in two outer regions P2 when the upper cladding layer 6 is equally divided into four regions P1 and P2 in the X-axis direction. In this example, the two regions P1 are inner regions, and the two regions P2 are outer regions. The width of the region P1 in the X-axis direction is equal to the width of the region P2 in the X-axis direction. In other words, the pair of grooves 68 are formed outside a straight line Q that passes through the center point of a region between the side surface 4b of the semiconductor mesa 4 and the outer edge of the quantum cascade laser element 1 (the outer edge of the semiconductor substrate 2) in the X-axis direction and is parallel to the Z-axis direction, when viewed from the Y-axis direction.

[0041] In the Z-axis direction, each groove 68 extends from the surface 62a of the first side S1 of the second portion 62 to the buried layer 5. That is, each groove 68 penetrates the upper cladding layer 6. In the Y-axis direction, each groove 68 extends linearly to both outer edges of the upper cladding layer 6. The width of each groove 68 in the X-axis direction narrows as it approaches the bottom of the groove 68. The maximum width of each groove 68 in the X-axis direction (the width at the end of the first side S1) is, for example, about 10 μm to 20 μm. In this example, the upper cladding layer 6 is separated into a plurality of parts by the grooves 68, and the upper cladding layer 6 includes these plurality of parts. These plurality of parts are formed to substantially the same thickness and made of the same material.

[0042] The dielectric layer 7 is a dielectric layer (insulating layer) made of, for example, a SiN film or a SiO2 film. The dielectric layer 7 is formed on a surface 65a of an outer portion 65 of the second portion 62 such that a part of the surface 6a of the upper cladding layer 6 (the top surface 61a of the first portion 61 and the surface 64a of the inner portion 64 of the second portion 62) is exposed from the dielectric layer 7. The inner portion 64 is a portion of the second portion 62 that is continuous with the first portion 61 and includes a connection portion 63. The outer portion 65 is a portion of the second portion 62 that is located outside the inner portion 64 in the X-axis direction. The surface 64a is a surface of the first side S1 of the inner portion 64, and the surface 65a is a surface of the first side S1 of the outer portion 65. The surface 64a of the inner portion 64 includes an inclined surface 63a of the connection portion 63.

[0043] The dielectric layer 7 is formed on the surface 65a of the outer portion 65, but is not formed on the surface 64a of the inner portion 64, exposing the surface 64a. In other words, the dielectric layer 7 has an opening 7a that exposes the first portion 61 and the inner portion 64 of the second portion 62 from the dielectric layer 7. The opening 7a exposes the top surface 61a of the first portion 61 and the surface 64a of the inner portion 64 of the second portion 62 from the dielectric layer 7. In both the X-axis direction and the Y-axis direction, the outer edge of the dielectric layer 7 reaches the outer edge of the upper cladding layer 6 (the outer edge of the semiconductor substrate 2). The dielectric layer 7 also functions as an adhesion layer that enhances adhesion between the upper cladding layer 6 and a metal layer 81 described later.

[0044] The width W3 of the opening 7a in the X-axis direction is at least twice the width W2 of the semiconductor mesa 4 in the X-axis direction. The width W3 may be at least five times the width W2. As an example, the width W3 is about 50 μm, and the width W2 is about 5 μm. The width W3 of the opening 7a is at least ten times the thickness of the upper cladding layer 6. The thickness of the upper cladding layer 6 is the maximum thickness of the upper cladding layer 6 in the Z-axis direction, and in this example, is the thickness T1 of the first portion 61 of the upper cladding layer 6. As described above, the thickness T1 of the first portion 61 is, for example, about 3.5 μm.

[0045] The dielectric layer 7 fills each of the pair of grooves 68. Within the grooves 68, the dielectric layer 7 extends along the inner surface of the grooves 68 and is in close contact with the inner surface of the grooves 68.

[0046] The first electrode 8 has a metal layer 81 and a plating layer 82. The metal layer 81 is, for example, a Ti / Au layer, and functions as a base layer (seed layer) for forming the plating layer 82. The plating layer 82 is formed on the metal layer 81. The plating layer 82 is, for example, an Au plating layer. The thickness of the first electrode 8 in the Z-axis direction is, for example, 8 μm or more.

[0047] The metal layer 81 is integrally formed so as to extend over the surface 6a of the upper cladding layer 6. More specifically, the metal layer 81 is formed over the top surface 61a and side surfaces of the first portion 61, and over the surface 62a of the second portion 62 including the inclined surface 63a of the connecting portion 63. That is, the metal layer 81 extends over the first region R1 and the second region R2. The metal layer 81 enters each of the pair of grooves 68. Within the grooves 68, the metal layer 81 extends along the inner surface of the grooves 68, and is coupled to the inner surface of the grooves 68 via the dielectric layer 7.

[0048] The metal layer 81 is in contact with the top surface 61a and side surfaces of the first portion 61 and the surface 64a of the inner portion 64 of the second portion 62 including the inclined surface 63a of the connection portion 63 through the opening 7a of the dielectric layer 7. In the outer portion 65 of the second portion 62, the metal layer 81 is formed on the second portion 62 via the dielectric layer 7. That is, the dielectric layer 7 is disposed between the outer portion 65 of the second portion 62 and the first electrode 8.

[0049] A contact layer (not shown) is disposed between the metal layer 81 and the top surface 61a of the first portion 61 of the upper cladding layer 6. The contact layer is, for example, a Si-doped InGaAs layer. The metal layer 81 is in contact with the top surface 61a of the first portion 61 via the contact layer. As a result, the first electrode 8 is electrically connected to the upper cladding layer 6 via the contact layer. In both the X-axis direction and the Y-axis direction, the outer edge of the metal layer 81 is located inside the outer edge of the dielectric layer 7 (the outer edge of the semiconductor substrate 2). The distance between the outer edge of the metal layer 81 and the outer edge of the dielectric layer 7 (the outer edge of the semiconductor substrate 2) in the X-axis direction is, for example, about 50 μm.

[0050] The plating layer 82 enters each of the pair of grooves 68. As a result, a pair of recesses (groove portions) 83 are formed on the surface 82a of the first side S1 of the plating layer 82. When viewed from the Z-axis direction, each of the pair of recesses 83 overlaps with the pair of groove portions 68. Each of the recesses 83 extends linearly along the Y-axis direction and reaches both outer edges of the plating layer 82. In a cross section perpendicular to the Y-axis direction, the shape of the recess 83 corresponds to the shape of the groove portion 68 (a shape similar to the groove portion 68).

[0051] A plurality of metal wires WR are electrically connected to the surface 82a of the plating layer 82. Each wire WR is formed by, for example, wire bonding, and is electrically connected to the metal layer 81 via the plating layer 82. A connection position between the metal layer 81 (plating layer 82) and each wire WR overlaps with the dielectric layer 7 when viewed from the Z-axis direction. The connection position is located on the inside of the recess 83 in the X-axis direction. The number of wires WR is not limited, and only one wire WR may be provided.

[0052] The second electrode 9 is formed on the surface 2b of the second side S2 of the semiconductor substrate 2. The second electrode 9 is, for example, an AuGe / Au film, an AuGe / Ni / Au film, or an Au film. The second electrode 9 is electrically connected to the lower cladding layer 3 via the semiconductor substrate 2.

[0053] In the quantum cascade laser device 1, when a bias voltage is applied to the active layer 41 via the first electrode 8 and the second electrode 9, light is emitted from the active layer 41, and light having a predetermined central wavelength among the light is resonated in the distributed feedback structure. As a result, laser light having a predetermined central wavelength is emitted from each of the first end face 4c and the second end face 4d. Note that a high-reflection film may be formed on one of the first end face 4c and the second end face 4d. In this case, laser light having a predetermined central wavelength is emitted from the other of the first end face 4c and the second end face 4d. Alternatively, a low-reflection film may be formed on one of the first end face 4c and the second end face 4d. Also, a high-reflection film may be formed on the other end face different from the end face on which the low-reflection film is formed. In either of these cases, laser light having a predetermined central wavelength is emitted from one of the first end face 4c and the second end face 4d. In the former case, laser light is emitted from both the first end face 4c and the second end face 4d. [Manufacturing method of quantum cascade laser element]

[0054] A method for manufacturing the quantum cascade laser element 1 will be described with reference to FIGS. 3 to 6. First, as shown in FIG. 3(a), a semiconductor wafer 200 having a first main surface 200a and a second main surface 200b is prepared, and a semiconductor layer 300 and a semiconductor layer 400 are formed on the first main surface 200a of the semiconductor wafer 200. The semiconductor wafer 200 is, for example, an S-doped InP single crystal (100) wafer. The semiconductor wafer 200 includes a plurality of portions each of which will become a semiconductor substrate 2, and is cleaved along a line L in a later process as described later. Similarly, the semiconductor layer 300 includes a plurality of portions each of which will become a lower cladding layer 3, and the semiconductor layer 400 includes a plurality of portions each of which will become a semiconductor mesa 4. The semiconductor layers 300 and 400 are formed by epitaxially growing each layer (i.e., each of the layers each of which will become the lower cladding layer 3, the lower guide layer, the active layer 41, and the upper guide layer) by MO-CVD, for example.

[0055] Next, a diffraction grating pattern is formed on a portion of the semiconductor layer 400 that will become the semiconductor mesa 4 (a portion that will become the upper guide layer). Specifically, for example, a dielectric film having a shape corresponding to the diffraction grating pattern is formed on the semiconductor layer 400, and the semiconductor layer 400 is dry-etched using the dielectric film as a mask, thereby forming the diffraction grating pattern on the semiconductor layer 400. The dielectric film is made of, for example, a SiN film or a SiO2 film. The dielectric film is removed by etching.

[0056] 3(b), a dielectric film 100 is formed on a portion of the semiconductor layer 400 that will become the semiconductor mesa 4, and the semiconductor layer 400 is dry-etched using the dielectric film 100 as a mask until the semiconductor layer 300 is reached. The dielectric film 100 is made of, for example, a SiN film or a SiO2 film. The dielectric film 100 is patterned into the shape shown in FIG. 3(b) by, for example, photolithography and etching. The width of the dielectric film 100 in the X-axis direction is, for example, about 6 μm.

[0057] 4(a), the semiconductor layer 400 is wet-etched using the dielectric film 100 as a mask, thereby forming a semiconductor mesa 4 in the semiconductor layer 400.

[0058] 4(b), a buried layer 500 is formed on the semiconductor layer 400. The buried layer 500 includes a plurality of portions each of which becomes a buried layer 5. The buried layer 500 is formed by crystal growth using MO-CVD, for example. The dielectric film 100 functions as a mask, so that the buried layer 500 is not formed on the dielectric film 100.

[0059] 5(a), the dielectric film 100 is removed by etching, and a semiconductor layer 600 is formed on the buried layer 500. The semiconductor layer 600 includes a plurality of portions each of which will become the upper cladding layer 6. The semiconductor layer 600 is formed by crystal growth using MO-CVD, for example. At this time, a semiconductor layer (not shown) including a plurality of portions each of which will become a contact layer is also formed on the semiconductor layer 600 by crystal growth using MO-CVD.

[0060] Next, as shown in FIG. 5(b), a dielectric film 110 is formed on a portion of the semiconductor layer 600 that is to become the first portion 61 of the upper cladding layer 6, and the semiconductor layer 600 is etched using the dielectric film 110 as a mask. As a result, the upper cladding layer 6 having the first portion 61 and the second portion 62 is formed in the semiconductor layer 600. The dielectric film 110 is made of, for example, a SiN film or a SiO2 film. The dielectric film 110 is patterned into a shape shown in FIG. 5(b) by, for example, photolithography and etching. The dielectric film 110 is removed by etching. Next, a pair of grooves 68 is formed in the semiconductor layer 600 and the buried layer 500. Specifically, for example, a dielectric film is formed on the upper cladding layer 6, and the semiconductor layer 600 and the buried layer 500 are etched using the dielectric film as a mask to form a pair of grooves 68. The dielectric film is removed by etching.

[0061] Next, as shown in Fig. 6(a), a dielectric layer 700 is formed on the semiconductor layer 600. The dielectric layer 700 includes a plurality of portions each of which becomes a dielectric layer 7. The dielectric layer 700 is patterned into the shape shown in Fig. 6(a) by, for example, photolithography and etching. As a result, an opening 7a (contact hole) is formed in the dielectric layer 700.

[0062] 6(a), a metal layer 810 is formed on the first portion 61 and the second portion 62 of the upper cladding layer 6, and then a plating layer 820 is formed on the metal layer 810 by plating. The metal layer 810 includes a plurality of portions each of which becomes the metal layer 81, and the plating layer 820 includes a plurality of portions each of which becomes the plating layer 82. The metal layer 810 is an ohmic electrode formed by sputtering or evaporating Ti having a thickness of about 50 nm and Au having a thickness of about 100 nm in this order. The plating layer 820 has a thickness of about 5 μm to 8 μm. The metal layer 810 on the line L is removed by, for example, etching after the formation of the plating layer 820. The line L is a cleavage line that separates the plurality of portions that become the quantum cascade laser element 1.

[0063] Next, as shown in FIG. 6(b), the second main surface 200b of the semiconductor wafer 200 is polished to thin the semiconductor wafer 200. Next, an electrode layer 900 is formed on the second main surface 200b of the semiconductor wafer 200. The electrode layer 900 includes a plurality of portions each of which becomes the second electrode 9. The electrode layer 900 may be subjected to an alloy heat treatment. Next, the semiconductor wafer 200, the semiconductor layer 300, the buried layer 500, the semiconductor layer 600, and the dielectric layer 700 are cleaved along the line L. As a result, a plurality of quantum cascade laser elements 1 are obtained. [Configuration of quantum cascade laser device]

[0064] 7, the quantum cascade laser device 10 includes a quantum cascade laser element 1A, a support member 11, a bonding material 12, and a CW drive unit (drive unit) 13. The quantum cascade laser element 1A has the same configuration as the above-mentioned quantum cascade laser element 1, except that the wire WR is not provided.

[0065] The support member 11 has a main body 111 and an electrode pad 112. The support member 11 is, for example, a submount with the main body 111 formed of AlN. The support member 11 supports the quantum cascade laser element 1A in a state in which the semiconductor mesa 4 is located on the support member 11 side with respect to the semiconductor substrate 2 (i.e., in an epi-side down state). In a quantum cascade laser device including the quantum cascade laser element 1 described above, the support member 11 can support the quantum cascade laser element 1 in a state in which the semiconductor mesa 4 is located on the opposite side of the semiconductor substrate 2 to the support member 11 (i.e., in an epi-side up state).

[0066] The bonding material 12 bonds the electrode pads 112 of the support member 11 and the first electrode 8 of the quantum cascade laser device 1A in an epi-side down state. The bonding material 12 is, for example, solder made of AuSn. The bonding material 12 enters a pair of recesses 83 formed in the plating layer 82 of the first electrode 8. The thickness of the portion of the bonding material 12 disposed between the electrode pads 112 and the first electrode 8 is, for example, about several μm.

[0067] The CW driver 13 drives the quantum cascade laser element 1A so that the quantum cascade laser element 1A continuously oscillates a laser beam. The CW driver 13 is electrically connected to each of the electrode pads 112 of the support member 11 and the second electrodes 9 of the quantum cascade laser element 1A. To electrically connect the CW driver 13 to each of the electrode pads 112 and the second electrodes 9, wire bonding is performed on each of the electrode pads 112 and the second electrodes 9.

[0068] In the quantum cascade laser device 10, a heat sink (not shown) is provided on the support member 11 side. Therefore, by mounting the quantum cascade laser element 1A on the support member 11 in an epi-side down state, the heat dissipation of the semiconductor mesa 4 can be improved. When the quantum cascade laser element 1A is driven to continuously oscillate laser light, the epi-side down configuration is effective. In particular, when the active layer 41 is configured to oscillate laser light having a relatively short central wavelength (for example, a central wavelength of any value between 4 μm and 6 μm) in the mid-infrared region and the quantum cascade laser element 1A is driven to continuously oscillate laser light, the epi-side down configuration is effective. The quantum cascade laser element 1A can be mounted in an epi-side down state because the upper cladding layer 6 and the first electrode 8 are formed on a plane formed by the surface 5a of the embedding layer 5 and the top surface 4a of the semiconductor mesa 4, and the surface of the first electrode 8 is formed approximately flat. [Action and Effects]

[0069] The quantum cascade laser element 1 includes buried layers 5 formed to sandwich the semiconductor mesa 4 along the X-axis direction (width direction of the semiconductor substrate 2). This allows the heat generated in the active layer 41 to be effectively dissipated. A pair of grooves 68 extending along the Y-axis direction (optical waveguide direction) is formed on the surface 6a of the first side S1 (opposite side to the semiconductor substrate 2) of the upper cladding layer 6, and the pair of grooves 68 are respectively arranged in the two outer regions P2 when the upper cladding layer 6 is equally divided into four regions P1 and P2 in the X-axis direction, and the metal layer 81 enters each groove 68. The metal layer 81 enters each groove 68, and thus the bonding strength between the metal layer 81 and the upper cladding layer 6 can be improved. As a result, peeling or deterioration of the metal layer 81 can be suppressed, and the stability of the laser element can be improved. In particular, in the outer region P2 where peeling or the like of the metal layer 81 is likely to occur, the metal layer 81 enters each groove 68, and peeling or the like of the metal layer 81 can be effectively suppressed. In addition, since the pair of grooves 68 are arranged in the outer region P2, the width of the portion between the pair of grooves 68 in the upper cladding layer 6 can be formed wide. As a result, the heat dissipation can be further improved. Therefore, according to the quantum cascade laser element 1, the heat dissipation and the stability can be improved. As a result, even when the quantum cascade laser element 1 is driven so as to continuously oscillate a laser beam with a relatively short central wavelength in the mid-infrared region (for example, a central wavelength of any value between 4 μm and 6 μm), the heat dissipation can be sufficiently improved and the oscillation of a high-order mode can be sufficiently suppressed, and a high yield can be realized. Note that in order to oscillate a laser beam with a central wavelength of 6 μm or less in the quantum cascade laser, it is necessary to increase the driving voltage, but the amount of heat generated increases when the driving voltage is increased. Therefore, in order to realize continuous oscillation, it is necessary to ensure good heat dissipation.

[0070] Each groove 68 reaches the burying layer 5. This makes it possible to more effectively suppress peeling of the metal layer 81. In addition, the upper cladding layer 6 is electrically isolated by a pair of grooves 68. This makes it possible to individually and optically inspect the multiple quantum cascade laser elements 1 in the state of a laser bar in which the elements before cleavage are connected only in the lateral direction when the quantum cascade laser elements 1 are obtained by cleaving a semiconductor wafer including multiple portions that will become the quantum cascade laser elements 1.

[0071] A recess 83 is formed on a surface 82a of the first side S1 of the plating layer 82. This allows the recess 83 to function as a relief for the bonding material 12 when the quantum cascade laser element 1A is bonded to the support member 11 with the bonding material 12, and makes it possible to prevent the bonding material 12 from creeping up onto the side surface of the quantum cascade laser element 1A.

[0072] When viewed from the Z-axis direction, the pair of recesses 83 overlap with the pair of grooves 68. By forming the metal layer 81 and the plating layer 82 on the upper cladding layer 6 having the grooves 68, such recesses 83 can be easily formed.

[0073] An opening 7a is formed in the dielectric layer 7 disposed between the upper cladding layer 6 and the metal layer 81, exposing the upper cladding layer 6 from the dielectric layer 7 in a first region R1 overlapping with the semiconductor mesa 4 when viewed from the Z-axis direction. The metal layer 81 is in contact with the upper cladding layer 6 through the opening 7a. This makes it possible for the dielectric layer 7 to improve the bonding strength between the metal layer 81 and the upper cladding layer 6, and further suppresses peeling of the metal layer 81, etc.

[0074] The dielectric layer 7 fills each of the grooves 68. This makes it possible to further prevent the metal layer 81 from peeling off.

[0075] The width W3 of the opening 7a in the X-axis direction is at least twice the width W2 of the semiconductor mesa 4. This makes it possible to increase the area where the metal layer 81 contacts the upper cladding layer 6, thereby further improving heat dissipation.

[0076] The width W2 of the opening 7a in the X-axis direction is ten times or more the thickness (thickness T1 of the first portion 61) of the upper cladding layer 6. This makes it possible to widen the area where the metal layer 81 contacts the upper cladding layer 6, thereby further improving heat dissipation.

[0077] When viewed from the Z-axis direction, the connection position between the metal layer 81 and the wire WR overlaps with the dielectric layer 7. This makes it possible to prevent the metal layer 81 from peeling off due to the tensile stress acting on the metal layer 81 from the wire WR.

[0078] The thickness of the upper cladding layer 6 is thinner in the second region R2 located outside the first region R1 in the X-axis direction than in the first region R1, which at least partially overlaps with the semiconductor mesa 4 when viewed from the Z-axis direction, and the metal layer 81 may extend across the first region R1 and the second region R2. In the quantum cascade laser element 1, in order to stably output fundamental mode light having an intensity peak at the center of the ridge in the width direction, it is required to suppress oscillation of higher mode light having intensity peaks on both sides of the center. When the buried layers 5 sandwiching the semiconductor mesa 4 along the width direction are provided, heat dissipation can be improved, but the light confinement effect of the buried layers 5 is weak, making it easier for higher mode light to oscillate. In this regard, in the quantum cascade laser device 1, the thickness of the upper cladding layer 6 is thinner in the second region R2 located outside the first region R1 in the X-axis direction than in the first region R1, at least a portion of which overlaps with the semiconductor mesa 4 when viewed from the Z-axis direction, and the metal layer 81 extends across the first region R1 and the second region R2. This makes it possible for the metal layer 81 formed to reach the second region R2 to absorb light in higher-order modes, thereby suppressing oscillation in higher-order modes.

[0079] Here, the effect of suppressing oscillation of the high-order transverse mode will be further described with reference to Fig. 8 and Fig. 9. Fig. 8 shows the electric field intensity distribution in the width direction of the semiconductor substrate 2, with the center of the semiconductor mesa 4 as the origin of the X-axis. The intensity distribution of the fundamental mode M0 is shown by a solid line, and the intensity distribution of the first mode M1 is shown by a two-dot chain line. As shown in Fig. 8, the light of the fundamental mode M0 has an intensity peak near the center of the semiconductor mesa 4, and the light of the first mode M1 has intensity peaks on both sides of the center of the semiconductor mesa 4.

[0080] 9(a) is a diagram showing the spread of the fundamental mode M0 when viewed from the optical waveguide direction A, and FIG. 9(b) is a diagram showing the spread of the first-order mode M1 when viewed from the optical waveguide direction A. As shown in FIG. 9(a) and FIG. 9(b), each of the fundamental mode M0 and the first-order mode M1 has a substantially elliptical spread with the major axis along the Z-axis direction. As described above, by forming the metal layer 81 that easily absorbs light so as to reach the second region R2 (on the second portion 62), it is possible to suppress the oscillation of the first-order mode M1 light while suppressing the loss of the fundamental mode M0 light (confining the fundamental mode M0 light).

[0081] The width W1 of the upper cladding layer 6 (the first portion 61 of the upper cladding layer 6) in the first region R1 is equal to or greater than the width W2 of the semiconductor mesa 4. This makes it possible to suppress oscillation in higher modes while suppressing loss in the fundamental mode.

[0082] The width W1 of the upper cladding layer 6 in the first region R1 is equal to or less than four times the width W2 of the semiconductor mesa 4. This makes it possible to effectively suppress oscillation in higher modes.

[0083] The thickness T2 of the upper cladding layer 6 (the second portion 62 of the upper cladding layer 6) in the second region R2 is equal to or less than half the thickness T1 of the upper cladding layer 6 in the first region R1. This makes it possible to more effectively suppress oscillation in higher modes.

[0084] The surface 6a of the first side S1 of the upper cladding layer 6 includes an inclined surface 63a formed at the boundary between the first region R1 and the second region R2, and the inclined surface 63a is inclined outward as it approaches the semiconductor substrate 2 when viewed from the Y-axis direction. The inclined surface 63a is curved so as to be convex toward the active layer 41 when viewed from the Y-axis direction. This makes it possible to increase the uniformity of the metal layer 81 formed on the inclined surface 63a, and to suppress the occurrence of variations in the oscillation suppression characteristics of the higher mode due to the non-uniformity of the metal layer 81. In addition, the metal layer 81 on the inclined surface 63a can be shaped according to the fundamental mode. As a result, the above-mentioned effect of suppressing the oscillation of the higher mode while suppressing the loss of the fundamental mode is remarkably achieved.

[0085] In the quantum cascade laser device 10, the bonding material 12 bonds the electrode pad 112 and the plating layer 82 in a state in which the semiconductor mesa 4 is located on the support member 11 side with respect to the semiconductor substrate 2 and the bonding material 12 enters the recess 83. As a result, the recess 83 functions as an escape portion for the bonding material 12, thereby preventing the bonding material 12 from creeping up to the side surface of the quantum cascade laser element 1A. In addition, since the dielectric layer 7 reaches the outer edge of the upper cladding layer 6 (the outer edge of the semiconductor substrate 2), the bonding material 12 is further prevented from creeping up to the front surface 2b side of the semiconductor substrate 2.

[0086] The CW driver 13 drives the quantum cascade laser element 1A to continuously oscillate the laser light. In this case, a lot of heat is generated in the active layer 41. In this regard, in the quantum cascade laser device 10, since the heat dissipation property is improved as described above, the heat generated in the active layer 41 can be dissipated well. [Variations]

[0087] In the quantum cascade laser element 1B according to the modified example shown in FIG. 10, the thickness of the upper cladding layer 6 is uniform (unchanged) except for the portion where the pair of grooves 68 are formed. The quantum cascade laser element 1B has the same configuration as the quantum cascade laser element 1 of the embodiment except for this point. The quantum cascade laser element 1B can also improve the heat dissipation and stability, as with the quantum cascade laser element 1 of the embodiment. In addition, since the portion of the upper cladding layer 6 that is formed thick is wide, the heat dissipation can be further improved.

[0088] The present invention is not limited to the above-mentioned embodiment and modified examples. The materials and shapes of each component are not limited to the above-mentioned materials and shapes, and various materials and shapes can be adopted. Other known quantum cascade structures can be applied to the active layer 41. The upper guide layer does not need to have a diffraction grating structure that functions as a distributed feedback structure.

[0089] The outer edge of the metal layer 81 in the Y-axis direction may reach the outer edge of the dielectric layer 7. In this case, it is possible to improve heat dissipation at the first end face 4c and the second end face 4d. The first electrode 8 may be formed only by the metal layer 81 without providing the plating layer 82. In this case, the wire WR may be connected to the surface of the metal layer 81 on the first side S1.

[0090] The thickness T2 of the upper cladding layer 6 (second portion 62) in the second region R2 may be 0. In other words, the second portion 62 may not be provided, and the upper cladding layer 6 may have only the first portion 61 located in the first region R1. Even in this case, the thickness of the upper cladding layer 6 can be considered to be thinner in the second region R2 than in the first region R1. In this case, the metal layer 81 is formed over the first portion 61 of the upper cladding layer 6 and the buried layer 5. Even with such a modified example, it is possible to improve heat dissipation and suppress oscillation in higher modes, as in the above embodiment.

[0091] The surface 5a of the first side S1 of the buried layer 5 may be located closer to the first side S1 than the top surface 4a of the semiconductor mesa 4, or may be located closer to the second side S2 than the top surface 4a. The width W1 of the first portion 61 of the upper cladding layer 6 may be equal to the width W2 of the semiconductor mesa 4, or may be smaller than the width W2 of the semiconductor mesa 4. It is sufficient that at least a part of the first region R1 overlaps with the semiconductor mesa 4 when viewed from the Z-axis direction, and the entire first region R1 may overlap with the semiconductor mesa 4. In this case, the width W1 of the first portion 61 is equal to or smaller than the width W2 of the semiconductor mesa 4. The connection portion 63 may not be formed at the boundary between the first portion 61 and the second portion 62. The groove portion 68 may not reach the buried layer 5. The groove portion 68 may reach the lower cladding layer 3 through the upper cladding layer 6 and the buried layer 5. [Explanation of symbols]

[0092] 1, 1A, 1B... quantum cascade laser element, 2... semiconductor substrate, 4... semiconductor mesa, 41... active layer, 5... buried layer, 6... upper cladding layer, 6a... surface, 63a... inclined surface, 68... groove portion, 7... dielectric layer, 7a... opening, 10... quantum cascade laser device, 11... support member, 112... electrode pad, 12... bonding material, 13... CW drive unit (drive unit), 81... metal layer, 82... plating layer, 83... recess, A... optical waveguide direction, P1... inner region, P2... outer region, R1... first region, R2... second region, WR... wire.

Claims

1. A semiconductor substrate; a semiconductor mesa including an active layer having a quantum cascade structure and formed on the semiconductor substrate so as to extend along an optical waveguide direction; a buried layer formed to sandwich the semiconductor mesa along a width direction of the semiconductor substrate; a cladding layer formed over the semiconductor mesa and the buried layer; an electrode including a metal layer formed on the cladding layer; a pair of grooves extending along the optical waveguide direction are formed on a surface of the cladding layer opposite to the semiconductor substrate; the pair of grooves are respectively disposed in two outer regions when the cladding layer is equally divided into four regions in a width direction of the semiconductor substrate, and the semiconductor mesa is disposed in two inner regions of the four regions; The metal layer extends into the pair of grooves, the electrodes extend into the pair of grooves so as to fill the pair of grooves entirely; The electrode further includes a plating layer formed on the metal layer, a recess is formed on a surface of the plating layer opposite to the semiconductor substrate, The recessed portion is provided in a pair, The pair of recesses respectively overlap with the pair of grooves when viewed in a thickness direction of the semiconductor substrate.

2. The quantum cascade laser device according to claim 1 , wherein the pair of grooves reach the burying layer.

3. a dielectric layer disposed between the cladding layer and the metal layer; an opening is formed in the dielectric layer to expose the cladding layer from the dielectric layer in a region overlapping with the semiconductor mesa when viewed in a thickness direction of the semiconductor substrate; The quantum cascade laser device according to claim 1 , wherein the metal layer is in contact with the cladding layer through the opening.

4. The quantum cascade laser device according to claim 3 , wherein the dielectric layer extends into the pair of grooves.

5. 5. The quantum cascade laser device according to claim 3, wherein a width of the opening in a width direction of the semiconductor substrate is at least twice as large as a width of the semiconductor mesa.

6. 6. The quantum cascade laser device according to claim 3, wherein a width of the opening in a width direction of the semiconductor substrate is 10 times or more a thickness of the cladding layer.

7. a metal wire electrically connected to the metal layer; 7. The quantum cascade laser element according to claim 3, wherein a connection position between the metal layer and the wire overlaps with the dielectric layer when viewed in the thickness direction of the semiconductor substrate.

8. a thickness of the cladding layer is thinner in a second region located outside the first region in a width direction of the semiconductor substrate than a first region at least a portion of which overlaps with the semiconductor mesa when viewed in a thickness direction of the semiconductor substrate, and the cladding layer has a portion present in the second region; The quantum cascade laser device according to any one of claims 1 to 7, wherein the metal layer extends across the first region and the second region.

9. The quantum cascade laser device according to claim 8 , wherein a width of the cladding layer in the first region is equal to or greater than a width of the semiconductor mesa.

10. 10. The quantum cascade laser device according to claim 8, wherein the width of the cladding layer in the first region is four times or less than the width of the semiconductor mesa.

11. 11. The quantum cascade laser element according to claim 8, wherein the thickness of the cladding layer in the second region is half or less of the thickness of the cladding layer in the first region.

12. a surface of the cladding layer opposite to the semiconductor substrate includes an inclined surface formed at a boundary between the first region and the second region; 12. The quantum cascade laser element according to claim 8, wherein the inclined surface is inclined outwardly as it approaches the semiconductor substrate when viewed from the optical waveguide direction.

13. The quantum cascade laser device according to claim 12 , wherein the inclined surface is curved so as to be convex toward the active layer when viewed from the optical waveguide direction.

14. 8. The quantum cascade laser element according to claim 1, wherein the cladding layer has a uniform thickness except for a portion where the pair of grooves are formed.

15. A quantum cascade laser element according to any one of claims 1 to 14, A quantum cascade laser device comprising: a driving unit that drives the quantum cascade laser element.

16. A support member having electrode pads and supporting the quantum cascade laser element; A bonding material that bonds the support member and the quantum cascade laser element, 16. The quantum cascade laser device of claim 15, wherein the bonding material bonds the electrode pad and the plating layer with the semiconductor mesa positioned on the support member side relative to the semiconductor substrate and the bonding material entering the pair of recesses.

17. The quantum cascade laser device according to claim 15 or 16, wherein the driving section drives the quantum cascade laser element so as to oscillate a continuous laser beam.

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