SUBSTRATE PROCESSING APPARATUS AND METHOD FOR CONTROLLING SUBSTRATE PROCESSING APPARATUS

Abstract

To perform various kinds of measurements about a substrate placement table or a substrate placed on the substrate placement table in a processing container.SOLUTION: A substrate processing apparatus includes a processing container, a substrate placement table, a rotation arm, a sensor, and a rotatory mechanism. The processing container has a plurality of processing spaces formed inside. The substrate placement table is disposed in each of the processing spaces. The rotation arm includes an end effector that can hold a substrate and has rotation shafts present at equal distances from the respective processing spaces. The sensor is provided on a back surface of the rotation arm opposite to a substrate holding surface of the end effector. The rotary mechanism rotates the rotation arm so that the sensor moves to the position opposite to the substrate placement table or the substrate placed on the substrate placement table in the processing container.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus and a method for controlling the substrate processing apparatus. [Background technology]

[0002] It has been proposed to provide an in-line monitor outside the processing space for polishing in a polishing apparatus, transport the polished substrate outside the processing space, and measure the film thickness and the like of the substrate by the in-line monitor (Patent Document 1).In addition, as a substrate processing apparatus for processing substrates (hereinafter also referred to as wafers) in a substrate processing system, a substrate processing apparatus that processes multiple wafers simultaneously in one processing vessel is known (Patent Document 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2006-43873 A [Patent Document 2] JP 2019-220509 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a substrate processing apparatus and a method for controlling the substrate processing apparatus that are capable of performing various measurements on a substrate mounting table or a substrate mounted on the substrate mounting table in a processing chamber. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a processing vessel, a substrate mounting table, a rotating arm, a sensor, and a rotating mechanism. The processing vessel has a plurality of processing spaces formed therein. The substrate mounting table is disposed in each of the plurality of processing spaces. The rotating arm includes an end effector capable of holding a substrate, and a rotation axis is positioned equidistant from each of the plurality of processing spaces. The sensor is provided on a back surface of the rotating arm opposite to a substrate holding surface of the end effector. The rotating mechanism rotates the rotating arm such that the sensor moves to a position within the processing vessel facing the substrate mounting table or a substrate mounted on the substrate mounting table. Effect of the Invention

[0006] According to the present disclosure, various measurements can be performed on the substrate mounting table or the substrate mounted on the substrate mounting table in a processing chamber. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is an exploded perspective view showing an example of a configuration of a substrate processing apparatus according to an embodiment of the present disclosure. [Diagram 2] FIG. 2 is a diagram showing an example of the positional relationship between the processing space and the rotating arm at the standby position. [Diagram 3] FIG. 3 is a diagram showing an example of the positional relationship between the processing space and the rotating arm at the wafer holding position. [Figure 4] FIG. 4 is a diagram showing an example of a moving path of a wafer in the substrate processing apparatus according to this embodiment. [Diagram 5] FIG. 5 is a diagram showing an example of an exhaust path of the substrate processing apparatus in this embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view showing an example of the configuration of the substrate processing apparatus in this embodiment. [Figure 7] FIG. 7 is a perspective view showing an example of the configuration of the rotating arm shown in FIG. 6 as viewed from the rear surface of the end effector. [Figure 8] FIG. 8 is a diagram showing an example of the operation of the substrate processing apparatus. [Figure 9]FIG. 9 is a diagram for explaining an example of a sensor in the modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of a substrate processing apparatus and a method for controlling the substrate processing apparatus will be described in detail with reference to the accompanying drawings. Note that the disclosed technology is not limited to the following preferred embodiments.

[0009] In a substrate processing apparatus in which multiple wafers are processed simultaneously in one processing chamber, a rotating arm capable of holding a wafer may be provided in the center of the processing chamber to transport the wafer between processing spaces. In a configuration in which a rotating arm is provided in the center of the processing chamber, no consideration is given to performing various measurements on the substrate mounting table or the substrate mounted on the substrate mounting table in the processing chamber. Therefore, it is expected that various measurements on the substrate mounting table or the substrate mounted on the substrate mounting table in the processing chamber will be performed.

[0010] [Configuration of substrate processing equipment] FIG. 1 is an exploded perspective view showing an example of the configuration of a substrate processing apparatus according to an embodiment of the present disclosure. In this embodiment, an example will be described in which the substrate processing apparatus 2 shown in FIG. 1 is applied to a film forming apparatus that performs plasma CVD (Chemical Vapor Deposition) processing on a wafer W. As shown in FIG. 1, the substrate processing apparatus 2 includes a processing vessel (vacuum vessel) 20 that is rectangular in plan view. The processing vessel 20 is configured to be able to maintain a vacuum atmosphere inside. The processing vessel 20 is configured by closing an open portion on the upper surface with a gas supply unit 4 and a manifold 36, which will be described later. Note that in FIG. 1, partitions and the like inside are omitted so that the relationship between the processing spaces S1 to S4 and the rotating arm 3 can be easily understood. Two loading / unloading ports 21 are formed on the side of the processing vessel 20 that is connected to a vacuum transfer chamber (not shown) so as to be aligned in the Y direction. The loading / unloading port 21 is opened and closed by a gate valve (not shown).

[0011] A plurality of processing spaces S1 to S4 are provided inside the processing vessel 20. A mounting table 22 is provided in each of the processing spaces S1 to S4. The mounting table 22 is an example of a substrate mounting table and can move in the vertical direction. The mounting table 22 moves to an upper position when processing the wafer W, and moves to a lower position when transferring the wafer W. A transfer space T is provided below the processing spaces S1 to S4, which connects the processing spaces S1 to S4 and transfers the wafer W by a rotating arm 3. The transfer space T below the processing spaces S1 and S2 is connected to each of the transfer ports 21, and the wafer W is transferred between the vacuum transfer chamber and the transfer space T by a substrate transfer mechanism (not shown). The substrate transfer mechanism is configured so that the substrate holder of the substrate transfer mechanism can hold, for example, two wafers W simultaneously so as to transfer two wafers W to the substrate processing apparatus 2 at a time.

[0012] The mounting tables 22 in the processing spaces S1 to S4 are laid out in two rows and two columns when viewed from above. In this layout, the row spacing and the column spacing have different dimensions. In other words, when comparing the Y-directional pitch (row spacing) Py of the mounting tables 22 with the X-directional pitch (column spacing) Px, the pitch Py is greater than the pitch Px.

[0013] FIG. 2 is a diagram showing an example of the positional relationship between the processing space and the rotating arm at the standby position. FIG. 3 is a diagram showing an example of the positional relationship between the processing space and the rotating arm at the wafer holding position. As shown in FIG. 2 and FIG. 3, the rotating arm 3 has four end effectors 32 capable of holding the wafers W placed on the mounting tables 22, and a base member 33 whose rotation axis is located at the center of a layout of two rows and two columns. The four end effectors 32 are connected to the base member 33 so as to be in an X shape. That is, the rotating arm 3 has the same number of end effectors 32 as the multiple processing spaces S1 to S4. In addition, the rotation axis of the base member 33, i.e., the rotation axis of the rotating arm 3, is located at a position equidistant from each of the multiple processing spaces S1 to S4. The X shape of the rotating arm 3 is configured such that, at the wafer W holding position shown in FIG. 3, the dimension in the Y direction corresponding to the row spacing of the X shape is different from the dimension in the X direction corresponding to the column spacing.

[0014] 2, the rotating arm 3 is positioned between the processing spaces S1 to S4, and does not impede the vertical movement of each mounting stage 22. In FIG. 2, a wafer W is placed on each mounting stage 22. The movement of the rotating arm 3 will be described when, for example, the wafers W in the first and second rows are transferred from this state so as to be interchanged, that is, when the wafers W in the processing spaces S1, S2 are transferred to the processing spaces S3, S4, and the wafers W in the processing spaces S3, S4 are transferred to the processing spaces S1, S2.

[0015] First, each mounting table 22 is moved to a transfer position in the lower transfer space T, and the lift pins 26 (described later) provided on each mounting table 22 are raised to lift the wafer W. Next, the rotating arm 3 is rotated clockwise by about 30°, and each end effector 32 is inserted between the mounting table 22 and the wafer W as shown in FIG. 3. Then, the lift pins 26 are lowered to place the wafer W on each end effector 32. Next, the rotating arm 3 is rotated clockwise by 180°, and the wafer W is transported to a holding position on each mounting table 22. When each mounting table 22 raises the lift pins 26 to receive the wafer W, the rotating arm 3 is rotated counterclockwise by about 30° to move to a standby position. In this manner, the first and second rows of wafers W can be transported in a swapped manner by the rotating arm 3. This allows the time required for transporting the wafer W to be reduced when, for example, different processes are repeated in the processing spaces S1, S2 and the processing spaces S3, S4 (for example, when a film formation process and an annealing process are repeated).

[0016] Fig. 4 is a diagram showing an example of a movement path of a wafer in the substrate processing apparatus in this embodiment. Fig. 4 illustrates a movement path when a wafer W is transferred from a vacuum transfer chamber (not shown) to the inside of the substrate processing apparatus 2. First, two wafers W are simultaneously loaded onto each mounting table 22 at a transfer position in the transfer space T at the bottom of the processing spaces S1, S2 corresponding to the mounting tables 22 in the same row, as shown by a path F1, by a substrate transfer mechanism (not shown) in the vacuum transfer chamber. Each mounting table 22 in the processing spaces S1, S2 raises the lift pins 26 to receive the wafer W.

[0017] Next, the rotating arm 3 is rotated clockwise by about 30° from the standby position, the end effector 32 is inserted between the wafer W and the mounting table 22 at the transfer position at the bottom of the processing spaces S1 and S2, and the lift pins 26 are lowered to place the wafer W on each end effector 32. After the wafer W is placed, the rotating arm 3 is rotated clockwise by 180° as shown by the path F2, and the wafer W is transferred onto the mounting table 22 (the holding position of the rotating arm 3) at the transfer position of the transfer space T at the bottom of the processing spaces S3 and S4. When the mounting table 22 at the transfer position at the bottom of the processing spaces S3 and S4 raises the lift pins 26 to receive the wafer W, the rotating arm 3 is rotated counterclockwise by about 30° and moved to the standby position. In this state, the wafer W is not placed on the mounting table 22 in the processing spaces S1 and S2, and the wafer W is placed on the mounting table 22 in the processing spaces S3 and S4. Next, two wafers W are simultaneously loaded onto each mounting table 22 at the transfer position at the bottom of the processing spaces S1, S2 by the substrate transfer mechanism in the vacuum transfer chamber, as shown by path F1, and the wafers W are placed on the mounting tables 22 in the processing spaces S1, S2, so that the wafers W are placed on all mounting tables 22 in the processing spaces S1 to S4.

[0018] Similarly, when unloading, first, the wafer W placed on the mounting table 22 at the transfer position at the bottom of the processing spaces S1 and S2 is unloaded into the vacuum transfer chamber by the substrate transfer mechanism. Next, the wafer W placed on the mounting table 22 at the transfer position at the bottom of the processing spaces S3 and S4 is transferred by the rotating arm 3 to the mounting table 22 at the transfer position at the bottom of the processing spaces S1 and S2. Next, the wafer W placed on the mounting table 22 at the transfer position at the bottom of the processing spaces S1 and S2 is unloaded into the vacuum transfer chamber by the substrate transfer mechanism. In this way, by using the substrate transfer mechanism capable of loading and unloading two wafers W at a time and the rotating arm 3, the wafer W can be loaded and unloaded into and from the processing spaces S1 to S4.

[0019] Also, when the wafer W is transported by the rotating arm 3, the misalignment of the wafer W with respect to the mounting table 22 at the transport destination may be detected and the mounting table 22 may be slightly moved in the XY plane to correct the misalignment of the wafer W. In this case, the substrate processing apparatus 2 has misalignment detection sensors that detect the misalignment of the wafer W at rotationally symmetric positions within the row intervals or column intervals on the rotation trajectory of the wafer W held by the rotating arm 3. In the example of Fig. 4, sensors 31a and 31b are provided between the processing spaces S1 and S2 and between the processing spaces S3 and S4, which are within the row intervals, respectively.

[0020] The sensors 31a and 31b are, for example, a pair of two optical sensors, and are arranged on a straight line in the X direction passing through the center of the substrate processing apparatus 2, that is, the center position of the 2-row, 2-column layout. This is to reduce errors by making the expansion direction due to thermal expansion of the processing vessel 20 the same direction for the two sensors. Note that the arrangement positions of the sensors 31a and 31b are not limited to the X direction as long as they are on a straight line passing through the center of the substrate processing apparatus 2. The substrate processing apparatus 2 detects the amount of misalignment of the wafer W by comparing the front and rear edges of the wafer W detected by the sensors 31a and 31b with the output result of an encoder (not shown) provided on the rotating arm 3.

[0021] 4, position P24 indicates a state where the rear edge of the wafer W passes the sensor 31b when transferred from the processing space S2 to S4, and position P42 indicates a state where the rear edge of the wafer W passes the sensor 31a when transferred from the processing space S4 to S2. The substrate processing apparatus 2 can correct the misalignment of the wafer W by minutely moving the mounting table 22 in the XY plane according to the detected amount of misalignment. That is, the substrate processing apparatus 2 adjusts the misalignment so that the wafer W is located at the center of the processing spaces S1 to S4 when the mounting table 22 is raised. Note that the term "minor" used here means within about 5 mm.

[0022] FIG. 5 is a diagram showing an example of an exhaust path of the substrate processing apparatus in this embodiment. FIG. 5 shows the processing vessel 20 viewed from above with a gas supply unit 4 described later removed. As shown in FIG. 5, a manifold 36 is disposed at the center of the substrate processing apparatus 2. The manifold 36 has a plurality of exhaust paths 361 connected to the processing spaces S1 to S4. Each exhaust path 361 is connected to a hole 351 of a thrust nut 35 described later at the center lower part of the manifold 36. Each exhaust path 361 is connected to an annular flow path 363 in each guide member 362 provided at the upper part of the processing spaces S1 to S4. That is, gas in the processing spaces S1 to S4 is exhausted to a joint exhaust port 205 described later through the flow path 363, the exhaust path 361, and the hole 351. The manifold 36 is an example of an exhaust manifold.

[0023] Fig. 6 is a schematic cross-sectional view showing an example of the configuration of the substrate processing apparatus in this embodiment. The cross section of Fig. 6 corresponds to the cross section of the substrate processing apparatus 2 taken along line AA shown in Fig. 5. The four processing spaces S1 to S4 have the same configuration, and are each formed between a mounting table 22 on which a wafer W is mounted and a gas supply unit 4 arranged opposite to the mounting table 22. In other words, the mounting table 22 and the gas supply unit 4 are provided in the processing vessel 20 for each of the four processing spaces S1 to S4. Fig. 6 shows processing spaces S1 and S3. The processing space S1 will be described below as an example.

[0024] The mounting table 22 also serves as a lower electrode, and is formed into a flat cylindrical shape made of, for example, metal or aluminum nitride (AlN) with a metal mesh electrode embedded therein. The mounting table 22 is supported from below by a support member 23. The support member 23 is formed into a cylindrical shape, extends vertically downward, and penetrates a bottom 27 of the processing vessel 20. A lower end of the support member 23 is located outside the processing vessel 20 and is connected to a rotation drive mechanism 600. The support member 23 is rotated by the rotation drive mechanism 600. The mounting table 22 is configured to be rotatable in response to the rotation of the support member 23. That is, the mounting table 22 is configured to be rotatable about its axis. In addition, an adjustment mechanism 700 is provided at the lower end of the support member 23 to adjust the position (and inclination) of the mounting table 22. The mounting table 22 is configured to be able to rise and fall between a processing position and a transfer position via the support member 23 by the adjustment mechanism 700. 6, the mounting table 22 at the transfer position is depicted by a solid line, and the mounting table 22 at the processing position is depicted by a dashed line. In addition, in the transfer position, the end effector 32 is inserted between the mounting table 22 and the wafer W to receive the wafer W from the lift pins 26. Note that the processing position is a position when a substrate process (e.g., a film formation process) is performed, and the transfer position is a position where the wafer W is transferred between the mounting table 22 and the end effector 32 or a substrate transport mechanism (not shown).

[0025] A heater 24 is embedded in the mounting table 22. The heater 24 heats each wafer W mounted on the mounting table 22 to, for example, about 60° C. to 600° C. In addition, the mounting table 22 is connected to a ground potential.

[0026] Further, the mounting table 22 is provided with a plurality of (for example, three) pin through holes 26a, and the lift pins 26 are disposed inside the pin through holes 26a. The pin through holes 26a are provided so as to penetrate from the mounting surface (upper surface) of the mounting table 22 to the back surface (lower surface) opposite to the mounting surface. The lift pins 26 are slidably inserted into the pin through holes 26a. The upper ends of the lift pins 26 are suspended from the mounting surface side of the pin through holes 26a. That is, the upper ends of the lift pins 26 have a larger diameter than the pin through holes 26a, and the upper ends of the pin through holes 26a have a recessed portion formed therein that is larger in diameter and thickness than the upper end of the lift pin 26 and can accommodate the upper end of the lift pin 26. As a result, the upper ends of the lift pins 26 are engaged with the mounting table 22 and suspended from the mounting surface side of the pin through holes 26a. The lower ends of the lift pins 26 protrude from the rear surface of the mounting table 22 toward the bottom 27 of the processing vessel 20 and are provided so as to be able to come into contact with a lifting mechanism (not shown).

[0027] When the mounting table 22 is raised to the processing position, the upper ends of the lift pins 26 are stored in the recesses of the pin through holes 26a on the mounting surface side. When the mounting table 22 is lowered from this state to the delivery position and the lift pins 26 are raised by a lifting mechanism (not shown), the upper ends of the lift pins 26 protrude from the mounting surface of the mounting table 22.

[0028] The gas supply unit 4 is provided above the mounting table 22 on the ceiling of the processing vessel 20 via a guide member 362 made of an insulating member. The gas supply unit 4 functions as an upper electrode. The gas supply unit 4 includes a lid 42, a shower plate 43 that forms an opposing surface provided to face the mounting surface of the mounting table 22, and a gas flow chamber 44 formed between the lid 42 and the shower plate 43. A gas supply pipe 51 is connected to the lid 42, and the shower plate 43 has gas discharge holes 45 that penetrate the shower plate 43 in the thickness direction and are arranged, for example, vertically and horizontally, so that gas is discharged toward the mounting table 22 in a shower-like manner.

[0029] Each gas supply unit 4 is connected to a gas supply system 50 via a gas supply pipe 51. The gas supply system 50 includes supply sources of, for example, a reactive gas (film forming gas) which is a processing gas, a purge gas, and a cleaning gas, as well as piping, a valve V, and a flow rate adjustment unit M. The gas supply system 50 includes, for example, a cleaning gas supply source 53, a reactive gas supply source 54, a purge gas supply source 55, valves V1 to V3 provided in the piping of each supply source, and flow rate adjustment units M1 to M3.

[0030] The cleaning gas supply source 53 is connected to a cleaning gas supply path 532 via a flow rate regulator M1, a valve V1, and a remote plasma unit (RPU) 531. The cleaning gas supply path 532 branches into four systems downstream of the RPU 531, and each system is connected to the gas supply pipe 51. Valves V11 to V14 are provided for each branch pipe downstream of the RPU 531, and the corresponding valves V11 to V14 are opened during cleaning. For convenience, only the valves V11 and V14 are shown in FIG. 6.

[0031] The reactive gas supply source 54 and the purge gas supply source 55 are connected to a gas supply line 52 via flow rate adjusters M2 and M3 and valves V2 and V3, respectively. The gas supply line 52 is connected to a gas supply line 51 via a gas supply line 510. Note that in FIG. 6, the gas supply line 52 and the gas supply line 510 are a collective representation of the supply lines and supply lines corresponding to the gas supply units 4.

[0032] A high-frequency power supply 41 is connected to the shower plate 43 via a matching box 40. The shower plate 43 functions as an upper electrode facing the mounting table 22. When high-frequency power is applied between the shower plate 43 as the upper electrode and the mounting table 22 as the lower electrode, the gas (reactive gas in this example) supplied from the shower plate 43 to the processing space S1 can be turned into plasma by capacitive coupling.

[0033] Next, the exhaust path from the processing spaces S1 to S4 to the joint exhaust port 205 will be described. As shown in Figures 5 and 6, the exhaust path runs from annular flow paths 363 in guide members 362 provided in the upper parts of the processing spaces S1 to S4 through exhaust paths 361, via a joint part at the center lower part of the manifold 36, and hole 351, to the joint exhaust port 205. The cross section of the exhaust path 361 is formed to be, for example, circular.

[0034] Around each of the processing spaces S1 to S4, an exhaust guide member 362 is provided so as to surround each of the processing spaces S1 to S4. The guide member 362 is, for example, an annular body provided so as to surround the area around the mounting table 22 at the processing position with a gap therebetween. The guide member 362 is configured to form an internal flow path 363 having, for example, a rectangular vertical cross section and an annular shape in plan view. In FIG. 5, the processing spaces S1 to S4, the guide member 362, the exhaust path 361, and the manifold 36 are shown in schematic form.

[0035] The guide member 362 forms a slit-shaped slit exhaust port 364 that opens toward the processing spaces S1 to S4. In this way, the slit exhaust port 364 is formed along the circumferential direction on the side periphery of each of the processing spaces S1 to S4. An exhaust path 361 is connected to the flow path 363, and the processing gas exhausted from the slit exhaust port 364 is caused to flow toward the junction at the center lower part of the manifold 36 and the hole 351.

[0036] 5, the sets of processing spaces S1-S2 and S3-S4 are arranged with 180° rotational symmetry around the manifold 36 when viewed from the top. As a result, the flow paths of the processing gas from each of the processing spaces S1 to S4 through the slit exhaust port 364, the flow path 363 of the guide member 362, and the exhaust path 361 to the hole 351 are formed with 180° rotational symmetry around the hole 351.

[0037] The hole 351 is connected to an exhaust pipe 61 via a joint exhaust port 205 inside a thrust pipe 341 of a two-axis vacuum seal 34 arranged in the center of the processing vessel 20. The exhaust pipe 61 is connected to a vacuum pump 62 constituting a vacuum exhaust mechanism via a valve mechanism 7. One vacuum pump 62 is provided for each processing vessel 20, for example, and exhaust pipes downstream of the vacuum pumps 62 are joined together and connected to, for example, a factory exhaust system.

[0038] The valve mechanism 7 opens and closes a flow path for the process gas formed in the exhaust pipe 61, and has, for example, a casing 71 and an opening / closing unit 72. A first opening 73 connected to the upstream exhaust pipe 61 is formed on the top surface of the casing 71, and a second opening 74 connected to the downstream exhaust pipe is formed on the side surface of the casing 71.

[0039] The opening / closing unit 72 includes an opening / closing valve 721 formed to a size for closing the first opening 73, and a lifting mechanism 722 provided outside the casing 71 for lifting the opening / closing valve 721 in the casing 71. The opening / closing valve 721 is configured to be freely raised and lowered between a closed position for closing the first opening 73 shown by a dashed line in FIG. 6 and an open position for retreating below the first and second openings 73 and 74 shown by a solid line in FIG. 6. When the opening / closing valve 721 is in the closed position, the downstream end of the joint exhaust port 205 is closed, and exhausting of the inside of the processing vessel 20 is stopped. When the opening / closing valve 721 is in the open position, the downstream end of the joint exhaust port 205 is opened, and exhausting of the inside of the processing vessel 20 is performed.

[0040] Next, a description will be given of the biaxial vacuum seal 34 and the thrust nut 35. The biaxial vacuum seal 34 has a thrust pipe 341, bearings 342 and 344, a rotor 343, a main body 345, magnetic fluid seals 346 and 347, and a direct drive motor 348.

[0041] The thrust pipe 341 is a non-rotating central shaft, and receives a thrust load applied to the central upper portion of the substrate processing apparatus 2 via the thrust nut 35. That is, when the processing spaces S1 to S4 are made into a vacuum atmosphere, the thrust pipe 341 receives a vacuum load applied to the central portion of the substrate processing apparatus 2, thereby suppressing deformation of the upper portion of the substrate processing apparatus 2. The thrust pipe 341 has a hollow structure, and its inside is a joint exhaust port 205. The upper surface of the thrust pipe 341 abuts against the lower surface of the thrust nut 35. The gap between the inner surface of the upper portion of the thrust pipe 341 and the outer surface of the convex portion on the inner periphery side of the thrust nut 35 is sealed by an O-ring (not shown). The lower surface of the thrust pipe 341 is fixed to the main body 345 by a bolt (not shown).

[0042] The outer peripheral side of thrust nut 35 has a threaded structure, and thrust nut 35 is screwed into a partition wall at the center of processing vessel 20. Manifold 36 is provided on the upper part of the center of processing vessel 20. The thrust load is received by manifold 36, the partition wall at the center of processing vessel 20, thrust nut 35, and thrust piping 341. A part of the lower surface of manifold 36 contacts the upper surface of thrust nut 35.

[0043] The bearing 342 is a radial bearing that holds the rotor 343 on the thrust pipe 341 side. The bearing 344 is a radial bearing that holds the rotor 343 on the main body 345 side. The rotor 343 is disposed concentrically with the thrust pipe 341 and is a rotation shaft at the center of the rotating arm 3. In addition, the base member 33 is connected to the rotor 343. When the rotor 343 rotates, the rotating arm 3, that is, the end effector 32 and the base member 33 rotate.

[0044] The main body 345 accommodates therein the bearings 342 and 344, the rotor 343, the magnetic fluid seals 346 and 347, and the direct drive motor 348. The magnetic fluid seals 346 and 347 are disposed on the inner and outer circumferential sides of the rotor 343, and seal the processing spaces S1 to S4 from the outside. The direct drive motor 348 is an example of a rotation mechanism, and is connected to the rotor 343 to rotate the rotation arm 3 by driving the rotor 343. The main body 345 is fixed to the bottom 27 (bottom surface) of the processing vessel 20 by bolts (not shown), and the thrust load applied to the thrust piping 341 is received by the processing vessel 20 via the main body 345.

[0045] In other words, the rotor 343 is an example of a rotating cylinder having a hollow interior, and corresponds to the outer cylinder of the biaxial vacuum seal 34, which is an example of a coaxial magnetic fluid seal. The rotor 343 is located at an equal distance from each of the processing spaces S1 to S4. Meanwhile, the thrust pipe 341 is located in a hollow portion on the inner periphery side of the rotor 343, and the joint exhaust port 205 therein is an example of an exhaust path, and corresponds to the inner cylinder of the biaxial vacuum seal 34. The upper surface of the thrust pipe 341 is fixed to a partition wall at the center of the processing vessel 20, i.e., the upper wall of the processing vessel 20, via the thrust nut 35. That is, the thrust pipe 341 supports the manifold 36 against the bottom wall (bottom 27) of the processing vessel 20 via the partition wall at the center of the processing vessel 20 and the thrust nut 35.

[0046] In this way, the two-axis vacuum seal 34 has a thrust pipe 341, which is the non-rotating central axis of the first axis, supporting the load on the upper part of the processing vessel 20 while also serving as a gas exhaust pipe, and a rotor 343, which is the second axis, serving to rotate the rotating arm 3.

[0047] The substrate processing apparatus 2 has a control unit 8. The control unit 8 is, for example, a computer including a processor, a storage unit, an input device, a display device, and the like. The control unit 8 controls each unit of the substrate processing apparatus 2. The control unit 8 allows an operator to input commands using the input device to manage the substrate processing apparatus 2. The control unit 8 can also visualize and display the operating status of the substrate processing apparatus 2 using the display device. Furthermore, the storage unit of the control unit 8 stores a control program for controlling various processes performed by the substrate processing apparatus 2 using the processor, recipe data, and the like. The processor of the control unit 8 executes the control program and controls each unit of the substrate processing apparatus 2 according to the recipe data, so that the desired substrate processing and measurement processing are performed by the substrate processing apparatus 2.

[0048] [End effector back surface configuration] The substrate processing apparatus 2 may also rotate the rotating arm 3 in the processing chamber 20 to bring a sensor close to the mounting table 22 or the wafer W mounted on the mounting table 22, and perform measurements on the mounting table 22 or the wafer W. In this case, as shown in FIGS. 6 and 7, a sensor 81 is provided on the back surface 32a of the rotating arm 3 of the substrate processing apparatus 2, which is opposite to the substrate holding surface of the end effector 32. FIG. 7 is a perspective view showing an example of the configuration of the rotating arm 3 shown in FIG. 6, as seen from the back surface 32a of the end effector 32. The sensor 81 can perform measurements on the mounting table 22 or the wafer W mounted on the mounting table 22 at a position facing the mounting table 22 or the wafer W mounted on the mounting table 22. Parameters that can be measured by the sensor 81 on the mounting table 22 include temperature, surface roughness, and the number of particles. Parameters that can be measured by the sensor 81 on the wafer W include temperature, film thickness, film quality, surface roughness, and the number of particles. The sensor 81 may be an image sensor capable of capturing an image of an object.

[0049] When starting measurement, the control unit 8 operates the direct drive motor 348 (see FIG. 6) to rotate the rotating arm 3 so that the sensor 81 moves to a position facing the mounting table 22 or the wafer W placed on the mounting table 22 within the processing chamber 20. Then, the control unit 8 performs measurement of the mounting table 22 or the wafer W by the sensor 81 at the position facing the mounting table 22 or the wafer W placed on the mounting table 22. For example, when the wafer W is placed on each mounting table 22 located at the transfer position in the transfer space T, the control unit 8 rotates the rotating arm 3 by about 30° clockwise from the standby position to move the sensor 81 to a position facing the wafer W, and performs measurement of the wafer W.

[0050] In this manner, the substrate processing apparatus 2 rotates the rotating arm 3 so that the sensor 81 moves to a position within the processing vessel 20 facing the mounting table 22 or the wafer W mounted on the mounting table 22, and performs measurements of the mounting table 22 or the wafer W at that position using the sensor 81. This allows the substrate processing apparatus 2 to perform various measurements of the mounting table 22 or the wafer W within the processing vessel 20 without transporting the mounting table 22 or the wafer W outside the processing vessel 20.

[0051] FIG. 8 is a diagram showing an example of the operation of the substrate processing apparatus 2. FIG. 8 shows a state in which the sensor 81 has moved to a position facing the wafer W placed on the mounting table 22 by the rotation of the rotating arm 3. The sensor 81 is provided in an area of ​​the back surface 32a of the end effector 32 that can face at least a line segment extending from the center of the mounting table 22 or the wafer W to the outer periphery when the back surface 32a faces the mounting table 22 or the wafer W. In addition, when the mounting table 22 is rotatable, the sensor 81 may be provided in an area that can face a curve connecting the center of the mounting table 22 or the wafer W to the outer periphery. Even in such a case, it can be said that the sensor 81 is provided in an area that can face a line segment extending from the center of the mounting table 22 or the wafer W to the outer periphery. In the example of FIG. 8, the sensor 81 is provided in a rectangular area extending along a line segment extending from the center of the mounting table 22 or the wafer W to the outer periphery.

[0052] The mounting table 22 is configured to be rotatable in response to driving of a rotation drive mechanism 600 (see FIG. 6). After the sensor 81 moves to a position facing the wafer W, the sensor 81 performs measurements on the wafer W while the mounting table 22 is rotating, as shown in FIG. 8. This allows the substrate processing apparatus 2 to perform various measurements on the entire surface of the wafer W.

[0053] The sensor 81 is provided on the rear surface 32a of each of the four end effectors 32, the same number as the multiple processing spaces S1 to S4. This allows the substrate processing apparatus 2 to simultaneously perform various measurements on the mounting tables 22 or wafers W in each of the processing spaces S1 to S4. The substrate processing apparatus 2 may rotate the rotating arm 3 so that the sensors 81 on the rear surfaces 32a of the four end effectors 32 circulate among the four processing spaces S1 to S4, and average the four measurement values ​​measured by the sensors 81 for each of the processing spaces S1 to S4.

[0054] The sensor 81 does not necessarily need to be provided on the rear surface 32a of all the end effectors 32. For example, the sensor 81 may be provided on the rear surface 32a of one of the four end effectors 32. In this case, the substrate processing apparatus 2 rotates the rotating arm 3 so that one sensor 81 on the rear surface 32a of one end effector 32 sequentially moves to a position facing the mounting table 22 or the wafer W in each of the processing spaces S1 to S4. This allows the substrate processing apparatus 2 to measure the mounting table 22 or the wafer W in each of the processing spaces S1 to S4 using a common sensor 81, thereby reducing measurement errors between the processing spaces S1 to S4 caused by errors between the sensors.

[0055] Furthermore, during the period in which the sensor 81 performs measurement, the substrate processing apparatus 2 may operate the adjustment mechanism 700 (see FIG. 6) and move the mounting table 22 or the wafer W to the focus position of the sensor 81 in accordance with the adjustment by the adjustment mechanism 700. For example, the substrate processing apparatus 2 rotates the rotating arm 3 so that the sensor 81 moves to a position facing the mounting table 22 or the wafer W, and then controls the adjustment mechanism 700 to raise the mounting table 22 so as to approach the sensor 81. This allows the substrate processing apparatus 2 to perform more precise measurement of the mounting table 22 or the wafer W.

[0056] [Variations] In the above embodiment, the sensor 81 is provided in a rectangular area of ​​the rear surface 32a of the end effector 32 of the rotating arm 3, but the sensor 82, which is a spot sensor smaller than the sensor 81, may be provided on the rear surface 32a. Such an embodiment will be described as a modified example.

[0057] Fig. 9 is a diagram for explaining an example of a sensor 82 in a modified example. A sensor 82, which is a spot sensor smaller than the sensor 81 of the embodiment, is provided on a back surface 32a opposite to the substrate holding surface of the end effector 32 of the rotating arm 3 shown in Fig. 9. The parameters that can be measured by the sensor 82 with respect to the mounting table 22 or the wafer W are similar to the parameters that can be measured by the sensor 81 with respect to the mounting table 22 or the wafer W.

[0058] The sensor 82 is provided on the rear surface 32 a of the end effector 32 at a local position set on an arc A having the rotation axis of the rotating arm 3 as its center and passing through the center of the mounting table 22 .

[0059] When starting the measurement, the control unit 8 operates the direct drive motor 348 (see FIG. 6) to rotate the rotating arm 3 so that the sensor 82 moves to a position facing the mounting table 22 or the wafer W mounted on the mounting table 22 in the processing chamber 20. The control unit 8 also operates the rotary drive mechanism 600 (see FIG. 6) to rotate the mounting table 22. Next, during the measurement period by the sensor 82, while the mounting table 22 is rotating, the control unit 8 operates the direct drive motor 348 to rotate the rotating arm 3 so that the sensor 82 moves between the center and the outer periphery of the mounting table 22 along the arc A. In FIG. 9, the rotating arm 3 when the sensor 82 is located at the center of the mounting table 22 is shown by a solid line, and the rotating arm 3 when the sensor 82 is located at the outer periphery of the mounting table 22 is shown by a two-dot chain line. This allows the substrate processing apparatus 2 to perform various measurements on the entire surface of the mounting table 22 or the entire surface of the wafer W.

[0060] In the above embodiment, the direct drive motor 348 is used as a method for driving the rotor 343 in the biaxial vacuum seal 34, but this is not limiting. For example, a pulley may be provided on the rotor 343, and the rotor 343 may be driven by a timing belt from a motor provided outside the biaxial vacuum seal 34. Alternatively, the rotor 343 may be driven by a gear provided on the rotor 343, which is an outer cylinder, engaged with a gear of a motor provided outside the rotor 343. Similarly, the first and second rotating cylinders in the triaxial vacuum seal may be driven by any of the direct drive motor, the timing belt, and the gears.

[0061] As described above, according to the present embodiment, the substrate processing apparatus 2 includes the processing vessel 20, the substrate mounting table (e.g., the mounting table 22), the rotating arm 3, sensors (e.g., the sensors 81 and 82), and a rotating mechanism (e.g., the direct drive motor 348). The processing vessel 20 has a plurality of processing spaces S1 to S4 formed therein. The substrate mounting table is disposed in each of the plurality of processing spaces S1 to S4. The rotating arm 3 includes an end effector 32 capable of holding a substrate (e.g., a wafer W), and a rotation axis is positioned at an equal distance from each of the plurality of processing spaces S1 to S4. The sensor is provided on the back surface 32a of the rotating arm 3, which is opposite to the substrate holding surface of the end effector 32. The rotating mechanism rotates the rotating arm 3 so that the sensor moves to a position facing the substrate mounting table or the substrate mounted on the substrate mounting table in the processing vessel 20. As a result, various measurements can be performed on the substrate mounting table or the substrate mounted on the substrate mounting table in the processing vessel 20.

[0062] According to the present embodiment, the substrate mounting table may be configured to be rotatable. The sensor may move to a position facing the substrate mounting table or the substrate, and then perform measurements related to the substrate mounting table or the substrate while the substrate mounting table is rotating. As a result, various measurements can be performed on the entire surface of the substrate mounting table or the entire surface of the substrate.

[0063] Furthermore, according to this embodiment, a sensor (for example, sensor 81) may be provided at least in an area of ​​the rear surface 32a of the end effector 32 that can face a line segment extending from the center to the outer periphery of the substrate mounting table or substrate when the rear surface 32a faces the substrate mounting table or substrate. As a result, various measurements can be performed on the entire surface of the substrate mounting table or the entire surface of the substrate.

[0064] Furthermore, according to this embodiment, a sensor (for example, sensor 82) may be provided at a local position on the rear surface 32a of the end effector 32, which is set on an arc A that has its center at the rotation axis of the rotating arm 3 and passes through the center of the substrate mounting table. As a result, even when the sensor 82, which is a small spot sensor, is used, various measurements can be performed on the entire surface of the substrate mounting table or the entire surface of the substrate.

[0065] Moreover, according to this embodiment, the substrate processing apparatus 2 may further include an adjustment mechanism 700 that adjusts the position of the substrate mounting table. The substrate mounting table or the substrate may be movable to the focus position of the sensor in response to adjustment by the adjustment mechanism 700. As a result, more precise measurements can be performed on the substrate mounting table or the substrate.

[0066] Furthermore, according to this embodiment, the rotating arm 3 may include a plurality of end effectors 32, the number of which is the same as the number of processing spaces S1 to S4. A sensor may be provided on the rear surface 32a of each of the end effectors 32. As a result, various measurements related to the substrate mounting tables or substrates in each of the processing spaces S1 to S4 can be performed simultaneously.

[0067] According to the present embodiment, the method for controlling the substrate processing apparatus 2 is a method for controlling the substrate processing apparatus 2 having a processing vessel 20, a substrate mounting table, a rotating arm 3, a sensor, and a rotating mechanism. The method for controlling the substrate processing apparatus 2 includes a rotating step and a measuring step. The rotating step rotates the rotating arm 3 by the rotating mechanism so that the sensor moves to a position in the processing vessel 20 facing the substrate mounting table or the substrate mounted on the substrate mounting table. The measuring step measures the substrate mounting table or the substrate by the sensor at a position facing the substrate mounting table or the substrate. As a result, various measurements can be performed in the processing vessel 20 on the substrate mounting table or the substrate mounted on the substrate mounting table.

[0068] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects, and may be omitted, substituted, or modified in various ways without departing from the spirit and scope of the appended claims.

[0069] For example, in the above embodiment, the substrate processing apparatus 2 is an apparatus that performs plasma CVD processing as the substrate processing, but the disclosed technology may be applied to any apparatus that performs other substrate processing such as plasma etching. [Explanation of symbols]

[0070] 2. Substrate Processing Equipment 3 Rotating Arm 8. Control Unit 20 Processing vessel 32 End effector 32a back side 81, 82 Sensor 348 Direct Drive Motor 700 Adjustment mechanism A Arc S1~S4 Processing space T Transport space W wafer

Claims

1. a processing vessel having a plurality of processing spaces formed therein; a substrate mounting table disposed in each of the plurality of processing spaces; a rotating arm having an end effector capable of holding a substrate, the rotating arm having a rotation axis positioned at an equal distance from each of the plurality of processing spaces; a sensor provided on a rear surface of the rotating arm opposite to a substrate holding surface of the end effector; a rotation mechanism that rotates the rotation arm so that the sensor moves to a position facing the substrate mounting table or a substrate mounted on the substrate mounting table within the processing chamber; Control unit and having The sensor includes: a sensor for measuring at least one of a temperature, a surface roughness, and a particle count of the substrate, or a sensor for measuring at least one of a temperature, a film thickness, a film quality, a surface roughness, and a particle count of the substrate, The substrate mounting table is a transfer position for transferring the substrate, the transfer position being located below the processing position and movable between at least a processing position in each of the plurality of processing spaces, The processing vessel comprises: an exhaust port that is disposed on a side periphery of each of the plurality of processing spaces and above a substrate mounting surface of the substrate mounting table that is located at the processing position, and that exhausts a processing gas from each of the plurality of processing spaces; having The control unit is When the substrate placement table is located at the transfer position, the rotation mechanism is controlled to rotate the rotation arm so that the sensor moves to a position facing the substrate placement table or the substrate placed on the substrate placement table. Substrate processing equipment.

2. The substrate mounting table is configured to be rotatable, The substrate processing apparatus according to claim 1 , wherein the sensor moves to a position facing the substrate mounting table or the substrate, and then performs measurements related to the substrate mounting table or the substrate while the substrate mounting table is rotating.

3. 3. The substrate processing apparatus according to claim 2, wherein the sensor is provided at least in an area of ​​the rear surface of the end effector that can face a line extending from a center to an outer periphery of the substrate mounting table or the substrate when the rear surface faces the substrate mounting table or the substrate.

4. the sensor is provided on the rear surface of the end effector at a local position set on an arc having a center on a rotation axis of the rotation arm and passing through a center of the substrate mounting table, The substrate processing apparatus according to claim 2 , wherein the rotation mechanism rotates the rotating arm so that the sensor moves along the arc between a center and an outer periphery of the substrate mounting table while the substrate mounting table is rotating during a measurement period by the sensor.

5. an adjustment mechanism for adjusting the position of the substrate mounting table; 5. The substrate processing apparatus according to claim 1, wherein the substrate mounting table or the substrate is movable to a focus position of the sensor in response to adjustment by the adjustment mechanism.

6. the rotating arm includes a plurality of end effectors, the number of which corresponds to the number of the processing spaces; 6. The substrate processing apparatus according to claim 1, wherein the sensor is provided on the rear surface of each of the end effectors.

7. a processing vessel having a plurality of processing spaces formed therein; a substrate mounting table disposed in each of the plurality of processing spaces; a rotating arm having an end effector capable of holding a substrate, the rotating arm having a rotation axis positioned at an equal distance from each of the plurality of processing spaces; a sensor provided on a rear surface of the rotating arm opposite to a substrate holding surface of the end effector; A rotation mechanism that rotates the rotation arm; A method for controlling a substrate processing apparatus comprising: rotating the rotating arm by the rotating mechanism so that the sensor moves to a position facing the substrate mounting table or the substrate mounted on the substrate mounting table within the processing chamber; a step of measuring the substrate mounting table or the substrate by the sensor at a position facing the substrate mounting table or the substrate; Including, The sensor includes: a sensor for measuring at least one of a temperature, a surface roughness, and a particle count of the substrate, or a sensor for measuring at least one of a temperature, a film thickness, a film quality, a surface roughness, and a particle count of the substrate, The substrate mounting table is a transfer position for transferring the substrate, the transfer position being located below the processing position and movable between at least a processing position in each of the plurality of processing spaces, The processing vessel comprises: an exhaust port that is disposed on a side periphery of each of the plurality of processing spaces and above a substrate mounting surface of the substrate mounting table that is located at the processing position, and that exhausts a processing gas from each of the plurality of processing spaces; having The rotating step includes: When the substrate placement table is located at the transfer position, the rotary arm is rotated so that the sensor moves to a position facing the substrate placement table or the substrate placed on the substrate placement table. A method for controlling a substrate processing apparatus.

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