Plasma processing system and plasma processing method

Abstract

To continue plasma processing even if components are deteriorated.SOLUTION: A plasma processing system 10 to be disclosed comprises: a plasma processing apparatus 100 that has a processing chamber 100a in which plasma processing on an object 400 is performed, and one or more components 122, 131 that are at least partially arranged inside the processing chamber 100a; a storage unit 301 that stores a recipe including a set value for defining a plasma processing condition; an allowable range determination unit 302 that determines the allowable range of the set value based on the degree of deterioration of the one or more components 122, 131; and a recipe changing unit 303 that, when the set value is out of the allowable range, changes the recipe so that the set value falls within the allowable range.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a plasma processing system and a plasma processing method. [Background technology]

[0002] Conventionally, there is known a plasma processing apparatus having a processing chamber in which a target object is subjected to plasma processing (for example, Patent Document 1). The plasma processing apparatus of Patent Document 1 has components (for example, a guide member for guiding the target object, etc.) arranged in the processing chamber. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-160468 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, when the above-mentioned parts deteriorate, the plasma processing of the target object cannot be performed appropriately, and the plasma processing apparatus must be stopped for maintenance. However, in some cases, it is desirable to avoid stopping the plasma processing apparatus. In such a situation, one of the objectives of the present disclosure is to enable the plasma processing to be continued even if the parts deteriorate. [Means for solving the problem]

[0005] One aspect of the present disclosure relates to a plasma processing system, the plasma processing system including a plasma processing apparatus having a processing chamber in which plasma processing of an object is performed and at least one component at least a part of which is disposed in the processing chamber, a storage unit that stores a recipe including set values ​​defining plasma processing conditions, an allowable range determination unit that determines an allowable range of the set values ​​based on a deterioration degree of the at least one component, and a recipe modification unit that modifies the recipe when the set value is out of the allowable range so that the set value falls within the allowable range.

[0006] Another aspect of the present disclosure relates to a plasma processing method using a plasma processing system including a plasma processing apparatus having a processing chamber in which plasma processing of an object is performed and at least one component at least a part of which is disposed in the processing chamber, and a storage unit that stores a recipe including a set value that defines a plasma processing condition, the plasma processing method including: an allowable range determination step of determining an allowable range of the set value based on a deterioration degree of the at least one component; and a recipe modification step of modifying the recipe so that the set value falls within the allowable range when the set value is out of the allowable range. Effect of the Invention

[0007] According to the present disclosure, plasma processing can be continued even if parts deteriorate. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic diagram illustrating an example of a plasma processing system according to the present disclosure. [Diagram 2] 1 is a flow chart of a plasma processing method according to the present disclosure. [Diagram 3] 1 is a conceptual diagram of a plasma processing method according to a first embodiment. [Figure 4] FIG. 11 is a conceptual diagram of a plasma processing method according to a second embodiment. [Diagram 5] FIG. 11 is a conceptual diagram of a plasma processing method according to a third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] The following describes an embodiment of the plasma device and the plasma processing method according to the present disclosure. However, the present disclosure is not limited to the following examples. In the following description, specific values ​​and materials may be exemplified, but other values ​​and materials may be applied as long as the effects of the present disclosure are obtained.

[0010] (Plasma Processing System) A plasma processing system according to the present disclosure includes a plasma processing apparatus having a processing chamber and at least one component, a storage unit, an allowable range determination unit, and a recipe modification unit.

[0011] A plasma processing apparatus is an apparatus for performing plasma processing (e.g., plasma cleaning or plasma dicing) on ​​an object in a processing chamber. The plasma processing apparatus may have a gas supply means for supplying a process gas to the processing chamber, a pressure reduction means for reducing the pressure in the processing chamber, and a power supply unit for generating plasma in the processing chamber.

[0012] The processing chamber is a space in which plasma processing of an object is performed. The processing chamber may be partitioned by an openable and closable housing. The object may be, for example, a substrate used in the manufacture of electronic devices, a circuit board having a circuit formed thereon, a mounting board having electronic components mounted on a circuit board, or a wafer. The object may be, for example, carried into or out of the processing chamber by a transport arm. The plasma processing may be, for example, a plasma cleaning process in which the object is cleaned by plasma.

[0013] At least a portion of the at least one component is disposed within the processing chamber. The at least one component may be, for example, a guide member for guiding an object, a transport arm for transporting an object, a top plate attached to a ceiling of a housing that defines the processing chamber, or a glass window attached to the housing. When the at least one component deteriorates, there is a risk of occurrence of defects such as abnormal discharge, reduced etching rate, and reduced uniformity in plasma processing (hereinafter, these defects are collectively referred to as defects such as abnormal discharge).

[0014] The storage unit stores a recipe including setting values ​​that define plasma processing conditions. The storage unit may be provided in the plasma processing apparatus, or may be provided in a device other than the plasma processing apparatus (e.g., a server connected to the plasma processing apparatus through a network). There are various possible setting values ​​included in the recipe, but the setting values ​​that are the subject of this application are setting values ​​related to the occurrence of defects such as the abnormal discharge described above.

[0015] The plasma processing conditions may include the pressure in the processing chamber, the type of process gas introduced to generate plasma in the processing chamber, the flow rate of the process gas, the output of a power supply unit that supplies high frequency power, the frequency of the high frequency power, the plasma processing time, and the number of objects placed in the processing chamber. At least some of these plasma processing conditions are defined by set values ​​and stored in a memory unit as a recipe. The set values ​​are determined in advance or are determined or corrected on an ongoing basis. Examples of the set values ​​include the output value of the power supply unit, the number of objects placed in the processing chamber, and the plasma processing time. The set values ​​are set within an allowable range having a predetermined upper limit and a lower limit so as to prevent defects such as abnormal discharge during plasma processing.

[0016] The allowable range determination unit determines the allowable range of the set value based on the deterioration degree of at least one part. The allowable range determination unit may be provided in the plasma processing apparatus, or may be provided in a device other than the plasma processing apparatus (e.g., a server connected to the plasma processing apparatus via a network). The deterioration degree of a part is a degree indicating the degree to which the part has deteriorated, and can be obtained by various methods. For example, it is conceivable to obtain the deterioration degree of the part based on at least one parameter related to the part (e.g., the period of use, the number of times used, etc.).

[0017] The deterioration degree may be determined based on various types of monitoring data related to the target component for which the deterioration degree is to be determined. The monitoring data may be acquired by various sensors. The sensors may be attached inside and / or outside the plasma processing apparatus. The monitoring data may be acquired in real time during the plasma processing, or may be acquired after the plasma processing. The monitoring data may be stored in a storage unit. One or more types of monitoring data may be acquired, and multiple types may be acquired.

[0018] The monitored data is not particularly limited, and may be, for example, data related to transport, such as the driving torque of the transport arm, the load applied to the transport arm, and the moving speed of the transport arm; data related to exhaust characteristics, such as the pressure reached in the processing chamber, the decompression rate and time required to reach a predetermined pressure from atmospheric pressure, the pressure increase rate and time required to reach atmospheric pressure from a predetermined pressure, the flow rate of process gas supplied to the processing chamber during processing, the pressure in the processing chamber during processing, and the opening of the pressure control valve during processing; or data related to the discharge state, such as the output of the high-frequency power supply unit, processing time, the matching position of the matching box, the load impedance of the matching box, RF reflected wave and / or incident wave, self-bias voltage (Vdc), the amplitude of the high-frequency voltage (Vpp), the emission spectrum, and potential fluctuations between probe electrodes installed in the processing chamber (plasma monitor waveform).

[0019] The monitoring data further includes data that can be calculated from data acquired in real time during plasma processing or data acquired after plasma processing. For example, the occurrence frequency of voltage changes associated with micro-arc discharges appearing in the plasma monitor waveform is also included in the monitoring data related to the discharge state.

[0020] On the other hand, the allowable range of the set value is a range of set values ​​within which the plasma processing can be continued without problems such as abnormal discharge. In other words, if the set value is outside the allowable range, there is a risk of problems such as abnormal discharge occurring during the plasma processing. The allowable range may change depending on the degree of deterioration of the parts at least a part of which is disposed inside the processing chamber.

[0021] When a set value that should be set within an allowable range is outside the allowable range based on the deterioration degree of the component, the recipe modification unit modifies the recipe so that the set value falls within the allowable range. The recipe modification unit may be provided in the plasma processing apparatus, or may be provided in an apparatus other than the plasma processing apparatus (e.g., a server connected to the plasma processing apparatus via a network). The modified recipe is stored in the storage unit and is used in subsequent plasma processing. This allows the plasma processing of the target object to be continued without stopping the plasma processing apparatus for maintenance of at least one deteriorated component.

[0022] (Plasma treatment method) The plasma processing method according to the present disclosure is a plasma processing method using a plasma processing system including a plasma processing apparatus having the above-mentioned processing chamber and at least one component, and the above-mentioned memory unit, and includes an allowable range determination process and a recipe change process.

[0023] In the tolerance determination step, a tolerance of the set value is determined based on the deterioration level of at least one component.

[0024] In the recipe modification process, if a set value that should be set within an allowable range is outside the allowable range based on the deterioration level of the component, the recipe is modified so that the set value falls within the allowable range. The modified recipe is stored in a storage unit and is used for subsequent plasma processing. This allows the plasma processing of the target object to continue without stopping the plasma processing apparatus for maintenance of at least one deteriorated component.

[0025] As described above, according to the present disclosure, plasma processing can be continued even if parts deteriorate, which makes it possible to flexibly respond to various production plans.

[0026] The storage unit may further store tolerance information indicating a relationship between the deterioration degree and the tolerance range of the set value, and the tolerance determination unit may determine the tolerance range of the set value based on the deterioration degree and the tolerance range information. The tolerance range information may be, for example, table data in which the deterioration degree of each component and the tolerance range of the set value are associated with each other. With this configuration, the tolerance range of the set value can be simply determined without complicated calculation processing.

[0027] The storage unit does not have to store such tolerance information. In this case, the tolerance determination unit may calculate the tolerance of the setting value based on, for example, the deterioration level of the part and an arbitrary function.

[0028] The at least one part may include a first part and a second part, the allowable range determination unit may determine a first allowable range of the set value based on a first deterioration degree that is a deterioration degree of the first part and may determine a second allowable range of the set value based on a second deterioration degree that is a deterioration degree of the second part, and the recipe modification unit may modify the recipe when the set value is outside at least one of the first allowable range and the second allowable range so that the set value falls within both the first allowable range and the second allowable range. With this configuration, even if at least one of the first part and the second part is deteriorated, the recipe is modified according to the deterioration degree so that the plasma processing can be continued.

[0029] The at least one part may include other parts in addition to the first part and the second part. The number of other parts is not particularly limited as long as it is one or more. In this case, the allowable range determination unit may determine a third allowable range based on the deterioration degree of the other parts, and the recipe modification unit may modify the recipe so that the set value falls within all of the first to third allowable ranges when the set value is out of at least one of the first to third allowable ranges. Here, the number of the third allowable ranges may vary depending on the number of the other parts. According to this configuration, even if at least one of the first part, the second part, and the other parts is deteriorated, the recipe is modified so that the plasma processing can be continued according to the deterioration degree.

[0030] The plasma processing apparatus may further include a power supply unit that supplies high frequency power for generating plasma in the processing chamber, the set value may include an output value of the power supply unit, and the upper limit of the allowable range of the set value may include an upper limit of the output value. With this configuration, when at least one component is deteriorated, the output value of the power supply unit is limited, thereby suppressing malfunctions such as abnormal discharge during plasma processing.

[0031] The processing chamber may be capable of loading a plurality of substrates as objects therein, the set value may include the number of substrates loaded in the processing chamber, and the upper limit of the allowable range of the set value may include the upper limit of the number. According to this configuration, when at least one component deteriorates, the number of substrates loaded in the processing chamber is limited, thereby suppressing malfunctions such as abnormal discharge during plasma processing.

[0032] When the upper limit of the number of substrates that can be placed in the processing chamber is reduced, the placement prohibition may be preferentially set to the placement positions farthest from the central region of the processing chamber. This allows the substrates to be placed in the central region of the processing chamber where the plasma discharge is relatively likely to be stable. Therefore, when the number of substrates that can be placed is limited, the plasma processing can be continued stably.

[0033] The set value may include a plasma processing time, and the upper limit of the allowable range of the set value may include an upper limit of the plasma processing time. According to this configuration, when at least one component is deteriorated, the plasma processing time is limited, thereby suppressing malfunctions such as abnormal discharge during plasma processing.

[0034] The plasma processing apparatus may include a storage unit, an allowable range determination unit, and a recipe modification unit. At least one of the storage unit, the allowable range determination unit, and the recipe modification unit may be provided in a device other than the plasma processing apparatus (for example, a server connected to the plasma processing apparatus via a network).

[0035] In the following, an example of a plasma processing system and a plasma processing method according to the present disclosure will be specifically described with reference to the drawings. The above-mentioned components and steps can be applied to the components of the plasma processing system and the steps of the plasma processing method of the example described below. The components of the plasma processing system and the steps of the plasma processing method of the example described below can be modified based on the above description. In addition, the matters described below may be applied to the above embodiment. Among the components of the plasma processing system and the steps of the plasma processing method of the example described below, the components and steps that are not essential to the plasma processing system and the plasma processing method according to the present disclosure may be omitted. Note that the figures shown below are schematic and do not accurately reflect the shapes and numbers of actual members.

[0036] First Embodiment 1 shows a schematic configuration of a plasma processing system 10 according to the first embodiment. The plasma processing system 10 includes a plasma processing apparatus 100 and various sensors (not shown). The various sensors are attached inside and / or outside the plasma processing apparatus 100. The various sensors acquire various data (monitoring data) related to the substrate 400 and the plasma processing apparatus 100 during plasma processing. The monitoring data may be stored in a storage unit 301, which will be described later.

[0037] The plasma processing apparatus 100 of this embodiment is a plasma cleaner for generating plasma in a processing chamber 100a described below to plasma clean the substrate 400, but is not limited thereto. For example, the plasma processing apparatus 100 may be a plasma etching apparatus for plasma etching the substrate 400, or a plasma dicer for plasma dicing the substrate 400. The plasma processing apparatus 100 includes a cover member 120 and a base portion 110.

[0038] The lid member 120 has a ceiling portion 120a and a side wall 120b extending from the periphery of the ceiling portion 120a. An end face of the side wall 120b of the lid member 120 and the periphery of the base body 111 of the base portion 110 are brought into close contact with each other to form a processing chamber 100a for performing plasma processing on the substrate 400 inside. The substrate 400 is an example of an object, but the object is not limited thereto. For example, the object may be a wafer. The substrate 400 may be, for example, a substrate used in the manufacture of electronic devices, a circuit board on which a circuit is formed, or a mounting board on which electronic components are mounted on a circuit board.

[0039] The lid member 120 has a top plate 122 disposed on the underside of the ceiling portion 120a. The top plate 122 is disposed to prevent debris, dust, and the like generated by the plasma processing from adhering to the ceiling portion 120a, and is removable. The top plate 122 is an example of the first part, but the first part is not limited to this. For example, the first part may be a transfer arm that transfers the substrate 400, or a glass window attached to the lid member 120. Note that the glass window does not have to be provided in the plasma processing apparatus.

[0040] The base 110 has an electrode body 112 on a surface facing the cover member 120. The electrode body 112 is supported by a grounded substrate 111. The electrode body 112 is connected to a power supply unit 200, but is insulated from the substrate 111. In the presence of a process gas, high frequency power is applied from the power supply unit 200 to the electrode body 112, thereby generating plasma in the processing chamber 100a. The cover member 120 functions as a counter electrode for the electrode body 112. The automatic matching box 202 has the function of preventing interference between the traveling and reflected high frequency waves flowing between the high frequency power supply 201 and the electrode body 112.

[0041] The inside of the processing chamber 100a can be maintained at a reduced pressure atmosphere through an exhaust port (not shown) communicating with the processing chamber 100a. The exhaust port communicates with a pressure reducing means (not shown). The pressure reducing means is composed of a vacuum pump, exhaust piping, a pressure adjusting valve, and the like. A seal member 116 for improving the airtightness inside the processing chamber 100a is provided between the periphery of the substrate 111 and the end face of the side wall 120b of the cover member 120. Although not shown, the plasma processing apparatus 100 includes a gas supply means for introducing a process gas, which is a plasma raw material, into the processing chamber 100a. The gas supply means is composed of a gas cylinder for supplying a process gas such as argon, oxygen, or nitrogen, and a pipe for introducing the process gas into the processing chamber 100a.

[0042] When the substrate 400 is loaded into the processing chamber 100a or unloaded out of the processing chamber 100a, the cover member 120 is moved away from the base portion 110 to open the processing chamber 100a. The substrate 400 is loaded and unloaded along a first direction A (a direction perpendicular to the paper surface in FIG. 1). On the other hand, when the substrate 400 is subjected to plasma processing, the end face of the side wall 120b of the cover member 120 is brought into close contact with the periphery of the base body 111 as shown in FIG. 1. The processing chamber 100a is opened and closed by raising and lowering the cover member 120. The raising and lowering of the cover member 120 is performed by a predetermined driving source not shown.

[0043] The electrode body 112 is supported on the base 111 via an insulating member 114. The electrode body 112 is composed of an upper electrode body 112a that faces the substrate 400 during plasma processing, and a lower electrode body 112b that faces the base 111 via the insulating member 114. Both the upper electrode body 112a and the lower electrode body 112b are formed of a conductive material (conductor). However, the surface of the upper electrode body 112a on which the substrate 400 is placed may be covered with a dielectric material such as ceramics (e.g., alumina, aluminum nitride, etc.) or quartz.

[0044] In the processing chamber 100a, the position of the substrate 400 on the electrode body 112 in the second direction B (left-right direction in FIG. 1) is regulated by a pair of guide members 131. In the illustrated example, three substrates 400 are regulated by three pairs of guide members 131. The number of substrates 400 arranged on the electrode body 112 may be one or more, and the number of guide members 131 may be appropriately set according to the number of substrates 400. The guide members 131 are an example of the second part, but the second part is not limited thereto. For example, the second part may be a transport arm that transports the substrate 400, or a glass window attached to the cover member 120.

[0045] The plasma processing apparatus 100 further includes a controller 300. The controller 300 includes a storage unit 301, an allowable range determination unit 302, and a recipe modification unit 303. The controller 300 includes a CPU and a memory capable of executing a program stored in the storage unit 301, and functions as each functional unit by the program being executed by the CPU.

[0046] The storage unit 301 stores a recipe including set values ​​that define plasma processing conditions. The recipe may include set values ​​such as the pressure in the processing chamber 100a, the type and flow rate of the process gas, the output and frequency of high frequency power, and the processing time. A representative set value in this embodiment includes the output value of the power supply unit 200. The storage unit 301 further stores tolerance information indicating the relationship between a first deterioration degree and a second deterioration degree, which will be described later, and the tolerance range of the set value (in this example, the output value of the power supply unit 200). This tolerance information may be table data in which each deterioration degree is associated with the set value. The storage unit 301 is, for example, configured with a non-volatile memory.

[0047] The allowable range determination unit 302 determines a first allowable range of the output value of the power supply unit 200 based on a first deterioration level, which is the deterioration level of the top board 122, and the allowable range information stored in the storage unit 301. The allowable range determination unit 302 determines a second allowable range of the output value of the power supply unit 200 based on a second deterioration level, which is the deterioration level of the guide member 131, and the allowable range information stored in the storage unit 301. For example, the allowable range determination unit 302 may determine each allowable range according to each deterioration level by referring to the above-mentioned table data.

[0048] When the output value of the power supply unit 200 is outside at least one of the first and second allowable ranges, the recipe modification unit 303 modifies the recipe so that the output value of the power supply unit 200 falls within both the first and second allowable ranges. For example, when the upper limit of the first allowable range is 500 W and the upper limit of the second allowable range is 400 W, and the output value of the power supply unit 200 in the recipe is 800 W, the recipe modification unit 303 modifies the recipe so that the output value of the power supply unit 200 is 400 W or less. At this time, the recipe modification unit 303 may modify other set values ​​in response to the reduction in the output value of the power supply unit 200. For example, it is possible to lengthen the plasma processing time or increase the number of plasma processing times.

[0049] On the other hand, when the output value of the power supply unit 200 is within both the first and second allowable ranges, the recipe change unit 303 does not perform recipe change processing for the output value of the power supply unit 200. In other words, when a certain setting value is within the allowable range, the recipe change unit 303 does not change the recipe for that certain setting value.

[0050] -Plasma treatment method- Next, a description will be given of a plasma processing method using the above-mentioned plasma processing system 10. As shown in FIG 2, the plasma processing method includes an allowable range determination step S10 and a recipe change step S20.

[0051] In the acceptable range determination process S10, the acceptable range determination unit 302 determines a first acceptable range of the setting value (in this example, the output value of the power supply unit 200) based on the first deterioration level and the acceptable range information, and determines a second acceptable range of the setting value based on the second deterioration level and the acceptable range information.

[0052] In the recipe change process S20, if the set value (in this example, the output value of the power supply unit 200) is outside at least one of the first and second allowable ranges (Yes in S201), the recipe change unit 303 changes the recipe so that the set value falls within both the first and second allowable ranges.

[0053] On the other hand, in the recipe change step S20, if the set value falls within both the first and second allowable ranges (No in S201), the recipe change process is not performed for that set value.

[0054] The plasma processing method of this embodiment is conceptually shown in Fig. 3. As shown in Fig. 3, it is assumed that the deterioration level (first deterioration level) of the first component is 40%, and the corresponding upper limit of the output value of the power supply unit 200 is 30% of the maximum value (the maximum value set in the recipe). It is also assumed that the deterioration level (second deterioration level) of the second component is 60%, and the corresponding upper limit of the output value of the power supply unit 200 is 75% of the maximum value. In this case, in the recipe change step S20, if the output value of the power supply unit 200 exceeds 30% of the maximum value (i.e., the smallest of the upper limits), the recipe is changed by the recipe change unit 303 so that the output value of the power supply unit 200 is 30% or less.

[0055] Second Embodiment A second embodiment of the present disclosure will be described. This embodiment differs from the first embodiment in the contents of the setting values ​​included in the recipe. The following mainly describes the differences from the first embodiment.

[0056] A representative set value in this embodiment includes the number of substrates 400 placed in the processing chamber 100a. The storage unit 301 stores allowable range information indicating the relationship between the first deterioration degree, the second deterioration degree, and the allowable range of the set value (in this example, the number of substrates 400).

[0057] The allowable range determination unit 302 determines a first allowable range for the number of substrates 400 that can be placed, based on a first deterioration degree that is the deterioration degree of the top plate 122 and the allowable range information stored in the storage unit 301. The allowable range determination unit 302 determines a second allowable range for the number of substrates 400 that can be placed, based on a second deterioration degree that is the deterioration degree of the guide member 131 and the allowable range information stored in the storage unit 301.

[0058] When the number of substrates 400 to be placed is outside at least one of the first and second allowable ranges (Yes in S201 in FIG. 2), the recipe modification unit 303 modifies the recipe so that the number of substrates 400 to be placed falls within both the first and second allowable ranges. For example, when the upper limit of the first allowable range is two substrates and the upper limit of the second allowable range is one substrate, and the number of substrates 400 to be placed in the recipe is three substrates, the recipe modification unit 303 modifies the recipe so that the number of substrates 400 to be placed is one substrate. At this time, it is preferable that the central region of the processing chamber 100a (the central placement location in the example of FIG. 1) is preferentially selected as the placement location for the substrates 400.

[0059] On the other hand, if the number of placed substrates 400 falls within both the first and second allowable ranges (No in S201 of FIG. 2), the recipe change unit 303 does not perform recipe change processing for the number of placed substrates 400.

[0060] The plasma processing method of this embodiment is conceptually shown in Fig. 4. As shown in Fig. 4, it is assumed that the deterioration level (first deterioration level) of the first component is 40%, and the corresponding upper limit of the number of substrates 400 that can be placed is five. It is also assumed that the deterioration level (second deterioration level) of the second component is 60%, and the corresponding upper limit of the number of substrates 400 that can be placed is two. In this case, in the recipe change step S20, if the number of substrates 400 that can be placed exceeds two (i.e., the smallest of the upper limits), the recipe is changed by recipe change unit 303 so that the number of substrates 400 that can be placed is two or less.

[0061] Third Embodiment A third embodiment of the present disclosure will be described. This embodiment differs from the first embodiment in the contents of the setting values ​​included in the recipe. The following mainly describes the differences from the first embodiment.

[0062] Representative set values ​​in this embodiment include a plasma processing time. The storage unit 301 stores allowable range information indicating the relationship between the first deterioration level, the second deterioration level, and the allowable range of the set value (in this example, the plasma processing time).

[0063] The allowable range determination unit 302 determines a first allowable range of the plasma processing time based on a first deterioration level which is the deterioration level of the top plate 122 and the allowable range information stored in the storage unit 301. The allowable range determination unit 302 determines a second allowable range of the plasma processing time based on a second deterioration level which is the deterioration level of the guide member 131 and the allowable range information stored in the storage unit 301.

[0064] When the plasma processing time is out of at least one of the first and second allowable ranges (Yes in S201 in FIG. 2), the recipe modification unit 303 modifies the recipe so that the plasma processing time falls within both the first and second allowable ranges. For example, when the upper limit of the first allowable range is 60 seconds and the upper limit of the second allowable range is 30 seconds, and the plasma processing time in the recipe is 90 seconds, the recipe modification unit 303 modifies the recipe so that the plasma processing time is 30 seconds or less. At this time, the recipe modification unit 303 may modify other set values ​​in response to the shortening of the plasma processing time. For example, it is possible to increase the output value of the power supply unit 200 or to increase the number of plasma processing times.

[0065] On the other hand, when the plasma processing time falls within both the first and second allowable ranges (No in S201 of FIG. 2), the recipe change unit 303 does not perform the recipe change process for the plasma processing time.

[0066] The plasma processing method of this embodiment is conceptually shown in Fig. 5. As shown in Fig. 5, it is assumed that the deterioration level (first deterioration level) of the first component is 40% and the corresponding upper limit of the plasma processing time is 60 seconds. It is also assumed that the deterioration level (second deterioration level) of the second component is 60% and the corresponding upper limit of the plasma processing time is 30 seconds. In this case, in the recipe change step S20, if the plasma processing time exceeds 30 seconds (i.e., the smallest of the upper limits), the recipe change unit 303 changes the recipe so that the plasma processing time is 30 seconds or less. [Industrial Applicability]

[0067] The present disclosure can be used in a plasma processing system and a plasma processing method. [Explanation of symbols]

[0068] 10: Plasma processing system 100: Plasma processing device 100a: Processing room 110: Base section 111: Base 112: Electrode body 112a: Upper electrode body 112b: Lower electrode body 114: Insulating material 116: Sealing material 120: Lid component 120a: Ceiling 120b: Side wall 122: Top plate (parts) 131: Guide material (parts) 200: Power supply section 201: High frequency power supply 202: Automatic matching box 300:Controller 301: Storage section 302: Tolerance range determination unit 303: Recipe modification section 400: Substrate (object)

Claims

1. a plasma processing apparatus having a processing chamber in which plasma processing of an object is performed and at least one component at least partially disposed within the processing chamber; a storage unit that stores a recipe including setting values ​​that define plasma processing conditions; an allowable range determination unit that determines an allowable range of the setting value based on a deterioration degree of the at least one component; a recipe modification unit that modifies the recipe when the setting value is outside the allowable range so that the setting value falls within the allowable range; Equipped with the storage unit further stores tolerance information indicating a relationship between the deterioration degree and the tolerance range, The tolerance determining unit determines the tolerance based on the degree of deterioration and the tolerance information.

2. the at least one part includes a first part and a second part; the tolerance determination unit determines a first tolerance range of the set value based on a first deterioration level that is the deterioration level of the first component, and determines a second tolerance range of the set value based on a second deterioration level that is the deterioration level of the second component; 2. The plasma processing system of claim 1, wherein, when the set value is outside at least one of the first allowable range and the second allowable range, the recipe modification unit modifies the recipe so that the set value falls within both the first allowable range and the second allowable range.

3. The plasma processing apparatus further includes a power supply unit that supplies high-frequency power for generating plasma in the processing chamber, the set value includes an output value of the power supply unit, 3. The plasma processing system of claim 1, wherein the upper limit of the tolerance range includes an upper limit of the output value.

4. the processing chamber is capable of placing a plurality of substrates therein as the object; the set value includes the number of the substrates to be placed in the processing chamber, 4. The plasma processing system according to claim 1, wherein the upper limit of the allowable range includes the upper limit of the number of sheets.

5. The set value includes a plasma treatment time, 5. The plasma processing system according to claim 1, wherein the upper limit of the allowable range includes an upper limit of the plasma processing time.

6. 6. The plasma processing system according to claim 1, wherein the plasma processing apparatus comprises the storage unit, the allowable range determination unit, and the recipe modification unit.

7. A plasma processing method using a plasma processing system including a plasma processing apparatus having a processing chamber in which plasma processing of an object is performed and at least one component at least a part of which is disposed within the processing chamber, and a storage unit that stores a recipe including setting values ​​that define plasma processing conditions, the method comprising: an allowable range determination step of determining an allowable range of the set value based on a deterioration degree of the at least one component; a recipe modification step of modifying the recipe when the setting value is outside the allowable range so that the setting value falls within the allowable range; Equipped with the storage unit further stores tolerance information indicating a relationship between the deterioration degree and the tolerance range, In the step of determining the allowable range, the allowable range is determined based on the degree of deterioration and the allowable range information.

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