Plasma enhanced atomic layer deposition apparatus and method

Abstract

An embodiment of the present invention provides a plasma enhanced atomic layer deposition apparatus and method, which includes: a precursor supply device communicating with the intake structure of two process chambers for selectively supplying a precursor or a purge gas to at least one of the two process chambers; a reactant gas supply device communicating with the intake structure of two process chambers for selectively supplying a reactant gas to at least one of the two process chambers; an RF device connected to the two process chambers for selectively outputting RF power to at least one of the two process chambers; and a pressure adjustment device communicating with the exhaust port of the two process chambers for independently controlling the chamber pressure of the two process chambers. The plasma enhanced atomic layer deposition apparatus and method according to the embodiment of the present invention increase the debugging means of the process, and do not need to arrange a precursor supply device in each chamber, thereby reducing the cost of the apparatus.

Description

[Technical field]

[0001] The present invention relates to the field of semiconductor manufacturing, and more particularly to plasma enhanced atomic layer deposition apparatus and methods. [Background technology]

[0002] Atomic layer deposition (ALD) is a method for depositing thin films, which has advantages such as good conformality, precise thickness controllability, and excellent coverage for high aspect ratio structures. Plasma enhanced atomic layer deposition (PEALD) can avoid the use of relatively high process temperatures and has a wider range of precursors to choose from, which is a good complement to the ALD method.

[0003] However, both ALD and PEALD systems have a problem of low productivity. To improve the productivity of PEALD systems, the conventional method is to use two process chambers to process two wafers simultaneously. In addition to each process chamber meeting the process requirements, the repeatability of the process between the two process chambers (including the thickness of the thin film, the uniformity of the thickness, the denseness of the thin film, etc.) is required. For example, the difference in thickness of the thin films deposited simultaneously in the two process chambers must be less than a set threshold (e.g., less than 1 angstrom).

[0004] However, in practical use, the conventional PEALD apparatus equipped with two process chambers inevitably has the following problems.

[0005] First, the pressures and RF-related parameters of the two process chambers cannot be controlled individually, which limits the process debugging. For example, if there is a difference in the thickness of the thin film formed in the two process chambers, the difference cannot be eliminated by individually adjusting the chamber pressure and RF-related parameters (e.g., RF power, frequency, lighting time, etc.) of each process chamber, which results in reduced flexibility in the process debugging means.

[0006] Secondly, because the plasma reaction steps must be performed simultaneously in the two process chambers, other steps (such as precursor introduction, purging, etc.) must also be performed synchronously, resulting in a single process form and poor process consistency between chambers. Moreover, to realize synchronous introduction of precursors to the two process chambers, it is necessary to arrange precursor sources (such as source bottles) individually in each chamber, which increases the cost of the precursor sources and the complexity of the chamber structure. Summary of the Invention [Problem to be solved by the invention]

[0007] In order to solve at least one of the technical problems existing in the prior art, the present invention aims to propose a plasma-enhanced atomic layer deposition apparatus and method, which can individually adjust the chamber pressure and RF-related parameters of each process chamber, thereby increasing the process debugging means, making the process consistency and process forms more diverse, eliminating the need to arrange a precursor supply device in each chamber, and reducing the equipment cost. [Means for solving the problem]

[0008] In order to achieve the objectives of the present invention, two process chambers and a precursor supply device communicating with the intake structures of the two process chambers for selectively supplying a precursor or a purge gas to at least one of the two process chambers; a reactive gas supply device communicating with the intake structures of the two process chambers for selectively supplying a reactive gas to at least one of the two process chambers; an RF device connected to the two process chambers for selectively outputting RF power to at least one of the two process chambers; and a pressure regulator communicating with the exhaust ports of the two process chambers for independently controlling chamber pressures of the two process chambers.

[0009] Optionally, the precursor delivery apparatus comprises a precursor source, an intake line group, a switching line group, and suction an apparatus, the precursor source being in communication with the intake line group via the switching line group, the intake line group being in communication with the intake structures of two of the process chambers; the precursor source is for supplying the precursor or a purge gas; The switching line group is configured to switch the precursor source to the intake line group or the suction for selectively communicating with the device; The inlet lines are for selectively communicating the precursor source with at least one of the two process chambers.

[0010] Optionally, the intake pipe group includes a first intake branch path and a second intake branch path, exhaust ends of the first intake branch path and the second intake branch path are respectively connected to the intake structures of the two process chambers, intake ends of the first intake branch path and the second intake branch path are both connected to the switching pipe group, and the first intake branch path and the second intake branch path are respectively provided with a first opening / closing valve and a second opening / closing valve.

[0011] Optionally, the intake pipe group further includes a first dilution branch and a second dilution branch, the intake ends of the first dilution branch and the second dilution branch both communicate with a dilution gas source for supplying dilution gas, the exhaust ends of the first dilution branch and the second dilution branch communicate with a first intake branch and a second intake branch, respectively, and the first dilution branch and the second dilution branch are provided with a first flow controller and a second flow controller, respectively.

[0012] Optionally, the intake pipe group further includes two gas mixing structures, each of which has a first intake end, a second intake end and an exhaust end, the first intake ends of the two gas mixing structures respectively communicating with the exhaust ends of the first intake branch path and the second intake branch path, the exhaust ends of the two gas mixing structures respectively communicating with the intake structures of the two process chambers, and the second intake ends of the two gas mixing structures for communicating with an equilibrium gas source that supplies an equilibrium gas and the reaction gas supply device.

[0013] Optionally, each of the gas mixing structures includes a gas mixing block and a gas mixing line, the gas mixing block has a gas mixing cavity, the first intake end and the second intake end are formed on an outer surface of the gas mixing block, the outer surface of the gas mixing block is further formed with an exhaust end communicating with the intake end of the gas mixing line, and the exhaust end of the gas mixing line is used as the exhaust end of the gas mixing structure and communicates with the intake structure of the process chamber.

[0014] Optionally, the group of switching lines includes a first switching branch and a second switching branch, opposite ends of the first switching branch communicating with the precursor source and the group of intake lines, respectively, and opposite ends of the second switching branch communicating with the first switching branch and the group of intake lines, respectively. suction the first switching branch and The above The second switch branch passage is provided with a third on-off valve and a fourth on-off valve.

[0015] Optionally, the precursor source includes a carrier gas main line, a source bottle, a first carrier gas branch line and a second carrier gas branch line, an intake end of the carrier gas main line is for communicating with a carrier gas source that supplies a carrier gas, an exhaust end of the carrier gas main line is communicated with the switching pipe group, and a fifth opening / closing valve and a third mass flow controller are provided in the carrier gas main line; an intake end of the first carrier gas branch path and the carrier gas main path communicate with each other at an upstream position of the fifth on-off valve, an exhaust end of the first carrier gas branch path and the intake end of the source bottle communicate with each other, an exhaust end of the second carrier gas branch path and the carrier gas main path communicate with each other at a downstream position of the fifth on-off valve, an intake end of the second carrier gas branch path and the exhaust end of the source bottle communicate with each other, and the first carrier gas branch path and the second carrier gas branch path are provided with a sixth on-off valve and a seventh on-off valve, respectively; The source bottle is for storing the precursor.

[0016] Optionally, the RF device includes a first matcher, a second matcher, a first RF power source and a second RF power source, the first RF power source being electrically connected to one of the process chambers via the first matcher and the second RF power source being electrically connected to another of the process chambers via the second matcher.

[0017] Optionally, the pressure regulator includes a first exhaust branch and a second exhaust branch, the first exhaust branch and The above The intake ends of the second exhaust branch passage are connected to the exhaust ports of the two process chambers, and the first exhaust branch passage and The above The exhaust ends of the second exhaust branch passage are The suction the first exhaust branch and The above The second exhaust branch passage is provided with a first shutoff valve and a second shutoff valve, The above The second exhaust branch passage is further provided with a first flow rate adjustment valve and a second flow rate adjustment valve.

[0018] Optionally, the plasma enhanced atomic layer deposition apparatus further includes a remote plasma cleaning device, a first cleaning line and a second cleaning line, the two gas mixing structures each have a third inlet end, the inlet ends of the first cleaning line and the second cleaning line each communicate with the remote plasma cleaning device, the exhaust ends of the first cleaning line and the second cleaning line each communicate with the two third inlet ends, and the first cleaning line and the second cleaning line are provided with a third shutoff valve and a fourth shutoff valve, respectively; The remote plasma cleaning device is for providing a plasma capable of cleaning the process chamber.

[0019] As another technical solution, an embodiment of the present invention further provides a plasma enhanced atomic layer deposition method, which uses the above plasma enhanced atomic layer deposition apparatus according to an embodiment of the present invention to deposit a film layer on two wafers simultaneously, and the plasma enhanced atomic layer deposition method includes: S1, introducing the precursor into a first one of the two process chambers and the reaction gas into a second one of the two process chambers, and outputting RF power to the second process chamber; a step S2 of purging the precursor supply system and the two process chambers; Step S3: introducing the precursor into the second process chamber and the reaction gas into the first process chamber, and outputting RF power to the first process chamber; and a step S4 of purging the precursor supply system and the two process chambers; Steps S1 to S4' are repeated until the thicknesses of the film layers deposited on the two wafers reach a target thickness. Effect of the Invention

[0020] The present invention has the following beneficial effects: In the plasma enhanced atomic layer deposition apparatus and method according to the embodiment of the present invention, a pressure regulating device communicating with the exhaust ports of the two process chambers can be used to independently control the chamber pressures of the two process chambers, and an RF device connected to the two process chambers can be used to selectively output RF power to at least one of the two process chambers to individually adjust the RF-related parameters of each process chamber, thereby not only increasing the debugging means of the process and improving the process consistency, but also eliminating the need for the two process chambers to perform each process step synchronously, thereby making the process form more diverse, and eliminating the need for a precursor supply device in each chamber, i.e., the precursor or purge gas can be selectively supplied to at least one of the two process chambers through the communication between the precursor supply device and the intake structures of the two process chambers, thereby reducing the cost of the apparatus. [Brief description of the drawings]

[0021] [Figure 1A] FIG. 1A is a schematic diagram of a conventional plasma enhanced atomic layer deposition apparatus. [Figure 1B] FIG. 1B is a flow block diagram of a deposition method for the plasma enhanced atomic layer deposition apparatus of FIG. 1A. [Diagram 2] FIG. 2 is a principle block diagram of a plasma enhanced atomic layer deposition apparatus according to an embodiment of the present invention. [Diagram 3] FIG. 3 is a structural diagram of a plasma enhanced atomic layer deposition apparatus according to an embodiment of the present invention. [Figure 4] FIG. 4 is an enlarged view of the precursor source used in the present embodiment. [Diagram 5] FIG. 5 is an enlarged view of the intake pipe group used in the embodiment of the present invention. [Figure 6] FIG. 6 is a flow block diagram of a plasma enhanced atomic layer deposition method according to an embodiment of the present invention. [Figure 7] FIG. 7 is a flow block diagram of another method for plasma enhanced atomic layer deposition according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] DETAILED DESCRIPTION In order for those skilled in the art to better understand the technical solutions of the present invention, the following detailed description of an apparatus and method for plasma enhanced atomic layer deposition according to an embodiment of the present invention will be given with reference to the accompanying drawings.

[0023] Referring to FIG. 1A, a conventional plasma enhanced atomic layer deposition (PEALD) apparatus may include two process chambers (1a, 1b) for simultaneously performing a deposition process on a wafer. Exhaust gases discharged from the two process chambers (1a, 1b) join together in a main exhaust pipe 11, and the main exhaust pipe 11 is used to exhaust the exhaust gases. suction The main exhaust pipe 11 is further provided with a shutoff valve 12 for turning the main exhaust pipe 11 on and off, and a flow rate control valve 13 for adjusting the gas flow rate in the main exhaust pipe 11, thereby realizing simultaneous control of the gas pressure in the two process chambers (1a, 1b).

[0024] Moreover, the two process chambers (1a, 1b) are each connected to a gas supply device 16 and a remote plasma cleaning device 17 via their intake lines, and the gas supply device 16 is for simultaneously supplying process gases (including, but not limited to, precursors, reactant gases and purge gases) to the two process chambers (1a, 1b), and the remote plasma cleaning device 17 is for simultaneously supplying plasma capable of cleaning the process chambers (e.g., plasma generated by ionization of NF3 gas) to the two process chambers (1a, 1b) after the cumulative thicknesses of the thin films in the two process chambers (1a, 1b) reach a certain thickness.

[0025] In addition, the two process chambers (1a, 1b) share one matcher 14 and RF power supply 15, and the RF power supply 15 simultaneously applies RF power to the two process chambers (1a, 1b) via the matcher 14, thereby exciting the reactive gases in the two process chambers (1a, 1b) to form plasma.

[0026] The above-mentioned plasma enhanced atomic layer deposition apparatus inevitably has the following problems in practical use.

[0027] First, since the two process chambers (1a, 1b) share one shutoff valve 12 and one flow control valve 13, the chamber pressures of the two process chambers (1a, 1b) cannot be controlled individually, which leads to limitations in process debugging. For example, if there is a difference in the thickness of the thin film deposited in the two process chambers, the difference cannot be eliminated by individually adjusting the chamber pressure of each process chamber, thereby reducing the flexibility of the process debugging means. In addition, when the shutoff valve 12 is opened, the two process chambers (1a, 1b) may still communicate with each other through the exhaust pipe, so that true physical separation is not realized, and in the event of an abnormality such as the generation of debris or an increase in the number of particles in one process chamber, it is highly likely to adversely affect the other process chamber.

[0028] Secondly, since the two process chambers (1a, 1b) share one matching box 14 and one RF power supply 15, if there is a difference in the thickness of the thin film deposited in the two process chambers, the difference cannot be eliminated by individually adjusting the RF-related parameters (e.g., power, frequency, lighting time, etc.) of each process chamber, thereby reducing the flexibility of the process debugging means. In addition, as shown in FIG. 1B, the two process chambers (1a, 1b) must simultaneously perform the plasma reaction step, so other steps (introduce precursors, purge, etc.) must also be performed synchronously, which results in a single process form and poor process consistency between the chambers. In addition, in order to meet the requirements for process consistency of the two process chambers, it is necessary to separately arrange one precursor source (e.g., source bottle) in each chamber, which allows the precursors to be synchronously introduced into the two process chambers (1a, 1b), but increases the cost of the precursor source and the complexity of the chamber structure.

[0029] Thirdly, since there is no switching control structure between the two process chambers (1a, 1b) and the remote plasma cleaning device 17, the two process chambers (1a, 1b) can only be cleaned simultaneously, and cannot be cleaned individually, so the cleaning method is single. In addition, the same intake pipe is shared between the remote plasma cleaning device 17 and the gas supply device 16, and there is no physical separation between the two, so there is a risk that the process gas will diffuse into the remote plasma cleaning device 17, which increases the difficulty of process control.

[0030] In order to solve at least one of the problems existing in the above-mentioned PEALD apparatus, referring to FIG. 2 and FIG. 3 together, an embodiment of the present invention further provides a plasma enhanced atomic layer deposition apparatus, which includes two process chambers (2a, 2b), a precursor supply device 3, a reaction gas supply device 6, an RF device 8 and a pressure adjustment device 7, the two process chambers (2a, 2b) are physically separated independent chambers, each process chamber has an intake structure 21, for example, a gas distribution device provided at the top of the chamber, for uniformly transporting the process gas into the chamber, and each process chamber is further provided with a base 22 for mounting a wafer S and controlling the temperature of the wafer S.

[0031] The precursor supply device 3 is connected to the intake structure 21 of the two process chambers (2a, 2b) and is for selectively supplying a precursor or a purge gas to at least one of the two process chambers (2a, 2b). That is, the two process chambers (2a, 2b) share one precursor supply device 3. In practical use, the precursor is selected according to the components and properties of the film layer material to be deposited, and the precursor can be transported to the process chamber in gaseous form with or without a carrier gas. For example, when the film layer material to be deposited is silica (SiO2), SAM24 (bis(diethylamine)silane) can be selected as the precursor.

[0032] In this embodiment, optionally, the precursor supply device 3 includes a precursor source 30, an intake line group 5, a switching line group 4, and suction The apparatus 10b includes a precursor source 30 communicating with an intake line group 5 via a switching line group 4, the intake line group 5 communicating with the intake structures 21 of the two process chambers (2a, 2b), the precursor source 30 for supplying the precursor or a purge gas, and the switching line group 4 for connecting the precursor source 30 to the intake line group 5 or suctionThe inlet line group 5 is for selectively communicating the precursor source 30 to at least one of the two process chambers (2a, 2b).

[0033] When the precursor source 30 is connected to the intake pipe group 5 by the switching pipe group 4, the precursor supplied by the precursor source 30 can be transported to the intake pipe group 5 and can be transported to at least one of the two process chambers (2a, 2b) via the intake pipe group 5, and the precursor source 30 can be connected to the intake pipe group 5 by the switching pipe group 4. suction When communicating with the apparatus 10b, the precursor provided by the precursor source 30 does not flow through any process chamber, suction It is discharged directly into the device 10b.

[0034] In this embodiment, optionally, as shown in FIG. 3, the switching line group 4 includes a first switching branch 41a and a second switching branch 41b, both ends of the first switching branch 41a are connected to the precursor source 30 and the intake line group 5, respectively, and both ends of the second switching branch 41b are connected to the first switching branch 41a and suction The first and second switching branches 41a and 41b are connected to the device 10b, and a third on-off valve 42a and a fourth on-off valve 42b are provided in the first and second switching branches 41a and 41b, respectively. When the third on-off valve 42a opens and the fourth on-off valve 42b closes, the first switching branch 41a is turned on and the second switching branch 41b is turned off, and at this time, the precursor sent from the precursor source 30 flows into the intake pipe group 5 through the first switching branch 41a. When the third on-off valve 42a closes and the fourth on-off valve 42b opens, the first switching branch 41a is turned off and the second switching branch 41b is turned on, and at this time, the precursor sent from the precursor source 30 flows into the intake pipe group 5 through the second switching branch 41b. suction It flows into device 10b.

[0035] In this embodiment, optionally, as shown in FIG. 4, the precursor source 30 includes a carrier gas main path 31, a source bottle 32, a first carrier gas branch path 35a and a second carrier gas branch path 35b, and the intake end (facing the left side in FIG. 4) of the carrier gas main path 31 is connected to a carrier gas source (not shown) that supplies carrier gas C1, and the exhaust end (facing the right side in FIG. 4) of the carrier gas main path 31 is connected to the switching pipe group 4 (i.e., the intake end of the first switching branch path 41a shown in FIG. 3), and the carrier gas main path 31 is provided with a fifth opening / closing valve 33 and a third mass flow controller 34, and the fifth opening / closing valve 33 is for turning the carrier gas main path 31 on and off, and the third mass flow controller 34 is for controlling the flow rate of the carrier gas C1 in the carrier gas main path 31.

[0036] The intake end of the first carrier gas branch path 35a communicates with the carrier gas main path 31 at an upstream position of the fifth on-off valve 33, the exhaust end of the first carrier gas branch path 35a communicates with the intake end of the source bottle 32, the exhaust end of the second carrier gas branch path 35b communicates with the carrier gas main path 31 at a downstream position of the fifth on-off valve 33, the intake end of the second carrier gas branch path 35b communicates with the exhaust end of the source bottle 32, and the first carrier gas branch path 35a and the second carrier gas branch path 35b are provided with a sixth on-off valve 36 and a seventh on-off valve 37, respectively. The sixth on-off valve 36 is for turning on and off the first carrier gas branch path 35a, and the seventh on-off valve 37 is for turning on and off the second carrier gas branch path 35b.

[0037] The source bottle 32 is for storing the precursor. The initial state of the precursor stored in the source bottle 32 may be liquid, solid, or gas, and when a process is performed, the precursor in the source bottle 32 is sent out in a gaseous state whether or not a carrier gas is used. Specifically, when the fifth on-off valve 33 is opened and the sixth on-off valve 36 and the seventh on-off valve 37 are closed, the carrier gas main line 31 is turned on, and the first carrier gas branch line 35a and the second carrier gas branch line 35b are turned off. At this time, the carrier gas C1 does not pass through the source bottle 32, but flows toward the switching pipe group 4 via the carrier gas main line 31, that is, the precursor in the source bottle 32 is not sent out. In this state, the carrier gas C1 is used to purge the pipes and the process chamber through which it passes, and at this time, the carrier gas C1 is used as the above-mentioned purge gas.

[0038] When the fifth on-off valve 33 is closed and the sixth on-off valve 36 and the seventh on-off valve 37 are opened, the carrier gas main passage 31 is turned off, and the first carrier gas branch passage 35a and the second carrier gas branch passage 35b are turned on. At this time, the carrier gas C1 flows toward the source bottle 32 through the front portion located upstream of the fifth on-off valve 33 of the carrier gas main passage 31 and the first carrier gas branch passage 35a. That is, the carrier gas C1 passes through the source bottle 32, carries the precursor in the source bottle 32, and can be sent out through the second carrier gas branch passage 35b and the rear portion located downstream of the fifth on-off valve 33 of the carrier gas main passage 31. In this state, when the precursor source 30 is connected to the intake pipe line group 5 by the switching pipe line group 4, the carrier gas C1 carrying the precursor can be transported into the intake pipe line group 5 and can be transported to at least one of the two process chambers (2a, 2b) through the intake pipe line group 5.

[0039] Optionally, the fifth on-off valve 33, the sixth on-off valve 36 and the seventh on-off valve 37 are all high-speed on-off valves, so as to realize high-speed opening and closing of the corresponding pipelines. Of course, in practical use, other on-off valves can be used according to different process requirements, and the embodiment of the present invention is not particularly limited thereto.

[0040] Optionally, an intermediate pipe 35c is connected between the first carrier gas branch path 35a and the second carrier gas branch path 35b, and a first automatic on-off valve 39c is provided in the intermediate pipe 35c, and when the first automatic on-off valve 39c is opened, the intermediate pipe 35c is turned on, and in this case, when the sixth on-off valve 36 and the seventh on-off valve 37 are opened, the carrier gas C1 does not pass through the source bottle 32, but the precursor in the source bottle 32 is sent out and can flow toward the switching pipe group 4. Optionally, a second automatic on-off valve 39a and a third automatic on-off valve 39b are provided in the first carrier gas branch path 35a and the second carrier gas branch path 35b at positions close to the feed end and the feed end of the source bottle 32, respectively, to realize automatic control of the first carrier gas branch path 35a and the second carrier gas branch path 35b. The first carrier gas branch path 35a and the second carrier gas branch path 35b may be provided with a first manual valve 38a and a second manual valve 38b, respectively. The provision of the automatic on-off valve and the manual valve is advantageous for improving the flexibility and reliability of control. The first automatic on-off valve 39c, the second automatic on-off valve 39a, and the third automatic on-off valve 39b are, for example, pneumatic valves.

[0041] In this embodiment, optionally, in order to ensure that there is sufficient precursor in the source bottle 32 to meet the requirements of the process, the source bottle 32 further has an injection end for connecting to a liquid transport system for replenishing the liquid precursor, specifically, the injection end is, for example, connected to a liquid transport system (not shown) via an injection line 321, and an eighth on-off valve 322 is provided near the injection end of the injection line 321.

[0042] In this embodiment, the precursor source 30 uses a source bottle 32 and a carrier gas C1 to supply the precursor, but the embodiment of the present invention is not limited thereto. In actual use, the precursor source may use any other gas supply structure, such as a gas holder.

[0043] In this embodiment, optionally, as shown in FIG. 5, the intake pipe group 5 includes a first intake branch 51a and a second intake branch 51b, and the exhaust ends of the first intake branch 51a and the second intake branch 51b are respectively connected to the intake structures 21 of the two process chambers (2a, 2b). Specifically, the exhaust ends may be connected to the intake structures 21 of the two process chambers (2a, 2b) via two gas mixing structures (55a, 55b), and the two gas mixing structures (55a, 55b) are connected to pipes for transporting precursors (and / or carrier gas) and other gases (e.g., dilution gas, equilibrium gas, etc.), for introducing these gases individually or after mixing into the two process chambers (2a, 2b), respectively. Of course, in actual use, depending on the specific case, the above-mentioned gas mixing structure may not be provided, in which case the exhaust ends of the first intake branch passage 51a and the second intake branch passage 51b can be directly connected to the intake structures 21 of the two process chambers (2a, 2b).

[0044] The intake ends of the first intake branch 51a and the second intake branch 51b are both connected to the exhaust end of the switching pipe group 4 (i.e., the first switching branch 41a shown in FIG. 3), and the first intake branch 51a and the second intake branch 51b are provided with a first on-off valve 52a and a second on-off valve 52b, respectively, as shown in FIG. 5. By selectively opening at least one of the first on-off valve 52a and the second on-off valve 52b, at least one of the first intake branch 51a and the second intake branch 51b can be turned on, thereby realizing the precursor source 30 to be connected to at least one of the two process chambers (2a, 2b).

[0045] In this embodiment, optionally, the two gas mixing structures (55a, 55b) each have a first intake end, a second intake end and an exhaust end, the first intake ends of the two gas mixing structures (55a, 55b) are connected to the exhaust ends of the first intake branch path 51a and the second intake branch path 51b, respectively, the exhaust ends of the two gas mixing structures (55a, 55b) are connected to the intake structures 21 of the two process chambers (2a, 2b), respectively, and the second intake ends of the two gas mixing structures (55a, 55b) are for connecting to an equilibrium gas source that supplies an equilibrium gas and a reaction gas supply device 6.

[0046] Specifically, the second intake ends of the two gas mixing structures (55a, 55b) are respectively connected to the equilibrium gas source via two equilibrium gas transport units (18a, 18b), and the two equilibrium gas transport units (18a, 18b) are respectively for independently transporting the equilibrium gas to the two process chambers (2a, 2b). When the deposition process is performed in the form of alternately transporting the precursor into the two process chambers (2a, 2b), at the time of switching between the two process chambers, the intake amount of the process chamber in which the transport of the precursor is stopped will fluctuate greatly, resulting in a large fluctuation in the chamber pressure and poor stability of the process gas. Therefore, when switching between the two process chambers, the equilibrium gas is started to be transported to the process chamber in which the transport of the precursor is stopped, and the intake amount of the equilibrium gas is made to correspond to the intake amount of the precursor, thereby avoiding a large fluctuation in the chamber pressure caused by the fluctuation in the intake amount and improving the stability of the flow field of the process gas. The equilibrium gas is, for example, argon gas (Ar) or other inert gas.

[0047] 3 and 5 only show two balance gas transport units (18a, 18b) in a schematic manner, and do not show the specific structure of the two, which may include, for example, a balance gas intake pipe and an on-off valve provided in the balance gas intake pipe, the intake end of the balance gas intake pipe is for connecting to a balance gas source, and the exhaust end of the balance gas intake pipe is connected to a corresponding gas mixing structure. In addition, a flow rate controller may be provided in the balance gas intake pipe to control the gas flow rate in the balance gas intake pipe. Of course, in practical use, the two balance gas transport units (18a, 18b) may be directly connected to the intake structure 21 of the two process chambers (2a, 2b), respectively, without the gas mixing structure (55a, 55b).

[0048] In this embodiment, as shown in FIG. 3, the reactive gas supply device 6 communicates with the intake structures 21 of the two process chambers (2a, 2b) and is for selectively supplying reactive gases to the two process chambers (2a, 2b) simultaneously or respectively. The plasma (including but not limited to free radicals) formed by the reactive gas can chemically react with the precursor adsorbed on the wafer S to form a required film layer on the surface of the wafer S. For example, if the film layer material to be deposited is silica (SiO2) and SAM24 (bis(diethylamine)silane) is used as the precursor, oxygen (O2) can be selected as the reactive gas.

[0049] In this embodiment, optionally, the reactive gas supply device 6 includes a first reactive gas transport unit 6a and a second reactive gas transport unit 6b, both of which can communicate with the intake structures 21 of the two process chambers (2a, 2b) via two gas mixing structures (55a, 55b), and are for independently transporting the reactive gas to the two process chambers (2a, 2b). In FIG. 3 and FIG. 5, only the first reactive gas transport unit 6a and the second reactive gas transport unit 6b are shown in a schematic manner, and the specific structure of both of them is not shown, and the specific structure includes, for example, a reactive gas intake pipe and an on-off valve provided in the reactive gas intake pipe, the intake end of the reactive gas intake pipe is for communicating with a reactive gas source, and the exhaust end of the reactive gas intake pipe is connected to the corresponding gas mixing structure. In addition, a flow rate controller may be provided in the reactive gas intake pipe to control the gas flow rate in the reactive gas intake pipe. Of course, in practical use, the first reaction gas transport unit 6a and the second reaction gas transport unit 6b may be directly connected to the intake structures 21 of the two process chambers (2a, 2b) without passing through the gas mixing structures (55a, 55b).

[0050] Each gas mixing structure may be various. For example, in this embodiment, as shown in FIG. 5, each gas mixing structure includes a gas mixing block 551 and a gas mixing pipe 552, a gas mixing cavity (not shown) is provided in the gas mixing block 551, and the first intake end, the second intake end and the exhaust end are formed on the outer surface of the gas mixing block 551, and the exhaust end is connected to the intake end of the gas mixing pipe 552, and the exhaust end of the gas mixing pipe 552 is used as the exhaust end of the gas mixing structure and connected to the intake structure 21 of the process chamber. It should be noted that the number of intake ends of the gas mixing structure corresponds to the number of process gases that need to be introduced into the process chamber. In practical use, the balance gas and / or reaction gas are introduced according to specific needs without passing through the gas mixing structure.

[0051] In this embodiment, optionally, as shown in Fig. 5, the intake pipe group 5 further includes a first dilution branch 53a and a second dilution branch 53b, the intake ends of the first dilution branch 53a and the second dilution branch 53b are both connected to a dilution gas source (not shown) for supplying dilution gas, the exhaust ends of the first dilution branch 53a and the second dilution branch 53b are respectively connected to the first intake branch 51a and the second intake branch 51b, and the first dilution branch 53a and the second dilution branch 53b are respectively provided with a first flow controller 54a and a second flow controller 54b for controlling the gas flow rate of the first dilution branch 53a and the second dilution branch 53b. The dilution gas sent out from the dilution gas source can flow into the first intake branch 51a and the second intake branch 51b through the first dilution branch 53a and the second dilution branch 53b, respectively, to perform a dilution effect, and can be mixed with the precursor. The diluent gas is, for example, argon gas (Ar) or other inert gas.

[0052] The RF device 8 is connected to two process chambers (2a, 2b) and selectively outputs RF power to at least one of the two process chambers (2a, 2b). Specifically, in this embodiment, as shown in Fig. 3, the RF device 8 includes a first matching device 81a, a second matching device 81b, a first RF power supply 82a, and a second RF power supply 82b, and the first RF power supply 82a is electrically connected to one process chamber (i.e., the first process chamber 2a) via the first matching device 81a, and the second RF power supply 82b is electrically connected to another process chamber (i.e., the second process chamber 2b) via the second matching device 81b.

[0053] By disposing the matching box and RF power supply separately in the two process chambers (2a, 2b), the RF-related parameters (such as RF power, frequency, lighting time, etc.) of the two process chambers (2a, 2b) can be adjusted separately, thereby increasing the process debugging means and improving the process consistency. Moreover, the RF power supply of each of the two process chambers (2a, 2b) can be turned on at different times, so that the two process chambers (2a, 2b) do not need to perform each process step synchronously, thereby making the process form more diverse. Moreover, there is no need to dispose a precursor supply device in each chamber, and the precursor can be introduced into a corresponding one of the process chambers at different times by using the precursor supply device used in this embodiment, that is, the precursor can be transported alternately to the two process chambers (2a, 2b), which meets the requirements of process consistency and reduces the equipment cost.

[0054] In this embodiment, the matching box and the RF power supply are disposed separately in the two process chambers (2a, 2b), but the embodiment of the present invention is not limited to this. In actual use, only one matching box and RF power supply are provided, and a corresponding switching device is provided to selectively connect the matching box and the RF power supply to one of the process chambers. Similarly, RF power can be applied to the two process chambers (2a, 2b) at different times, and the two process chambers (2a, 2b) do not need to perform each process step synchronously, thereby making the process form more diverse.

[0055] The pressure adjusting device 7 is connected to the exhaust ports of the two process chambers (2a, 2b) and serves to independently control the chamber pressure of the two process chambers (2a, 2b). In this way, if there is a difference in the thickness of the thin film deposited in the two process chambers (2a, 2b), the pressure adjusting device 7 can adjust the chamber pressure of each process chamber individually to eliminate the difference, thereby improving the flexibility of the process debugging means.

[0056] Specifically, in this embodiment, the pressure adjustment device 7 includes a first exhaust branch passage 71a and a second exhaust branch passage 71b, and the intake ends of the first exhaust branch passage 71a and the second exhaust branch passage 71b are connected to the exhaust ports of the two process chambers (2a, 2b), respectively. suction The exhaust branch path 71a is connected to the apparatus 10a, and the first exhaust branch path 71a and the second exhaust branch path 71b are provided with a first shut-off valve 72a and a second shut-off valve 72b, respectively, for independently controlling the opening and closing of the first exhaust branch path 71a and the second exhaust branch path 71b, and the first exhaust branch path 71a and the second exhaust branch path 71b are provided with a first flow rate control valve 73a and a second flow rate control valve 73b, respectively, for independently adjusting the gas flow rates of the first exhaust branch path 71a and the second exhaust branch path 71b.

[0057] The first exhaust branch 71a and the second exhaust branch 71b are provided with a first shutoff valve 72a and a second shutoff valve 72b, respectively, so that the two process chambers (2a, 2b) can be reliably physically separated, and therefore, in the case of an abnormality such as the generation of debris or an increase in the number of particles in one process chamber, it is possible to avoid adverse effects on the other process chamber. At the same time, the first exhaust branch 71a and the second exhaust branch 71b are provided with a first flow rate control valve 73a and a second flow rate control valve 73b, respectively, so that the exhaust speeds of the two process chambers (2a, 2b) can be independently controlled, and thus, when there is a difference in the thickness of the deposited thin film in the two process chambers (2a, 2b), the first flow rate control valve 73a and the second flow rate control valve 73b can be independently controlled to the chamber pressure of each process chamber, thereby eliminating the difference, thereby improving the flexibility of the process debugging means and further improving the process consistency of the two process chambers (2a, 2b).

[0058] It should be noted that the pressure adjusting device 7 is not limited to the means according to the above embodiment, and in actual use, any other structure may be used to achieve independent control of the chamber pressure of each process chamber.

[0059] Furthermore, in actual use, suction Apparatus 10a and suction The device 10b is the same suction That is, the switching line group 4 may be the same as the two process chambers (2a, 2b). suction Share the device. suction The device is for example a vacuum pump.

[0060] In this embodiment, the plasma enhanced atomic layer deposition apparatus further includes a remote plasma cleaning device 9, a first cleaning line 91a and a second cleaning line 91b, and the two gas mixing structures (55a, 55b) each further have a third inlet end, the inlet ends of the first cleaning line 91a and the second cleaning line 91b each communicate with the remote plasma cleaning device 9, and the exhaust ends of the first cleaning line 91a and the second cleaning line 91b each communicate with the third inlet ends of the two gas mixing structures (55a, 55b). Of course, in practical use, the exhaust ends of the first cleaning line 91a and the second cleaning line 91b may directly communicate with the intake structures 21 of the two process chambers (2a, 2b) according to specific cases.

[0061] In addition, a third shut-off valve 92a and a fourth shut-off valve 92b are provided at the exhaust ends of the first cleaning line 91a and the second cleaning line 91b, respectively, and the remote plasma cleaning device 9 is for supplying plasma capable of cleaning the process chamber (e.g., plasma formed by ionization of NF3 gas) to at least one of the two process chambers (2a, 2b) after the cumulative thickness of the thin film in the two process chambers (2a, 2b) reaches a certain thickness.

[0062] The third and fourth shutoff valves 92a and 92b can be used to clean either process chamber individually or clean two process chambers simultaneously, thereby improving the flexibility of the cleaning method. At the same time, when performing a deposition process, the third and fourth shutoff valves 92a and 92b can be closed to prevent the process gas from diffusing into the remote plasma cleaning device 9, thereby improving the utilization rate of the process gas and the stability of the process gas.

[0063] In actual use, the remote plasma cleaning device 9 may not be provided depending on the actual situation.

[0064] As another technical means, an embodiment of the present invention further provides a plasma-enhanced atomic layer deposition method, which uses the above-mentioned plasma-enhanced atomic layer deposition apparatus according to an embodiment of the present invention to deposit a film layer on two wafers simultaneously.

[0065] Specifically, taking the plasma enhanced atomic layer deposition apparatus shown in FIG. 3 as an example, as shown in FIG. 6, the plasma enhanced atomic layer deposition method includes steps S1 to S4,

[0066] In step S1, the two process chambers (2a, 2b) perform steps S11 and S12, respectively, which may be performed synchronously or at different times.

[0067] In step S11, a precursor is introduced into the first process chamber 2a, and the precursor is adsorbed on the surface of the wafer S.

[0068] In step S12, a reactive gas is introduced into the second process chamber 2b, and RF power is output to the second process chamber 2b so as to excite the reactive gas to form a plasma, which can react with the precursor adsorbed on the surface of the wafer S to form a required film layer on the surface of the wafer S.

[0069] Specifically, taking the plasma-enhanced atomic layer deposition apparatus shown in Figures 2 to 5 as an example, in the process of performing steps S11 and S12, the fourth on-off valve 42b, the fifth on-off valve 33, and the second on-off valve 52b are closed, and the third on-off valve 42a, the sixth on-off valve 36, the seventh on-off valve 37, and the first on-off valve 52a are opened, thereby achieving individual introduction of the precursor (transported by the carrier gas C1) into the first process chamber 2a. In the process of performing step S11, the time required to introduce the precursor into the first process chamber 2a is generally short, and is shorter than the process time of step S11. In this case, the third on-off valve 42a does not always remain open in the process of performing step S11. For example, when starting step S11, the third on-off valve 42a opens and the fourth on-off valve 42b closes. At this time, the precursor is introduced into the first process chamber 2a, and after a certain time has elapsed (before the process time of step S11 has been reached), the third on-off valve 42a closes and the fourth on-off valve 42b opens. At this time, the precursor is supplied to the first process chamber 2a through the second switching branch 41b. suction Of course, in practical use, the third on-off valve 42a may be kept open during step S11 according to various needs, and the embodiment of the present invention is not particularly limited thereto.

[0070] At the same time, optionally, a dilution gas is simultaneously introduced into the two process chambers (2a, 2b) using the first dilution branch 53a and the second dilution branch 53b, an equilibrium gas is introduced into the second process chamber 2b using the equilibrium gas transport unit 18b to ensure that the intake volumes of the two process chambers (2a, 2b) are similar, a reactant gas is introduced into the second process chamber 2b using the second reactant gas transport unit 6b, and a second RF power source 82b is opened to apply RF power to the second process chamber 2b through the second matching box 81b, thereby exciting the reactant gas to form plasma.

[0071] In step S2, the two process chambers (2a, 2b) perform steps S21 and S22, respectively, which may be performed synchronously or at different times.

[0072] Steps S21 and S22 are both for purging the precursor supply device and the two process chambers (2a, 2b) of the plasma enhanced atomic layer deposition apparatus.

[0073] Specifically, taking the plasma-enhanced atomic layer deposition apparatus shown in Figures 2 to 5 as an example, in the process of performing steps S21 and S22, the fourth on-off valve 42b, the fifth on-off valve 33, the first on-off valve 52a, the second on-off valve 52b, and the third on-off valve 42a are opened, and the sixth on-off valve 36 and the seventh on-off valve 37 are closed, thereby purging the pipelines and the two process chambers (2a, 2b).

[0074] At the same time, optionally, the first dilution branch 53a and the second dilution branch 53b can be used to simultaneously introduce dilution gas into the two process chambers (2a, 2b) to play a purge role, and the two balance gas transport units (18a, 18b) can be used to simultaneously introduce balance gas into the first process chamber 2a and the second process chamber 2b, respectively, to similarly play a purge role and stop the introduction of reaction gas into the second process chamber 2b.

[0075] In step S3, the two process chambers (2a, 2b) perform steps S31 and S32, respectively, which may be performed synchronously or at different times.

[0076] In step S31, a reactive gas is introduced into the first process chamber 2a, and RF power is output to the first process chamber 2a so as to excite the reactive gas to form a plasma, which can react with the precursor adsorbed on the surface of the wafer S to form a required film layer on the surface of the wafer S.

[0077] In step S32, a precursor is introduced into the second process chamber 2b and the precursor is adsorbed on the surface of the wafer S.

[0078] Specifically, taking the plasma enhanced atomic layer deposition apparatus shown in Figures 2 to 5 as an example, in the process of performing steps S31 and S32, the fourth on-off valve 42b, the fifth on-off valve 33 and the first on-off valve 52a are closed, while the third on-off valve 42a, the sixth on-off valve 36, the seventh on-off valve 37 and the second on-off valve 52b are opened, thereby realizing the introduction of the precursors individually into the second process chamber 2b (transported by the carrier gas C1).

[0079] At the same time, optionally, a dilution gas is simultaneously introduced into the two process chambers (2a, 2b) using the first dilution branch 53a and the second dilution branch 53b, an equilibrium gas is introduced into the first process chamber 2a using the equilibrium gas transport unit 18a to ensure that the intake volumes of the two process chambers (2a, 2b) are similar, a reactant gas is introduced into the first process chamber 2a using the first reactant gas transport unit 6a, and a first RF power source 82a is opened to apply RF power to the first process chamber 2a through the first matching box 81a, thereby exciting the reactant gas to form plasma.

[0080] In step S4, the two process chambers (2a, 2b) perform steps S41 and S42, respectively, which may be performed synchronously or at different times.

[0081] Steps S41 and S42 are similar to steps S21 and S22 above, and will not be described again here.

[0082] The above steps S1 to S4 are repeated until the thicknesses of the film layers deposited on the two wafers reach the target thickness.

[0083] In the plasma enhanced atomic layer deposition method according to the embodiment of the present invention, the two process chambers (2a, 2b) do not need to perform each process step synchronously, which makes the process form more diverse. Moreover, there is no need to arrange a precursor supply device in each chamber, and the precursor can be introduced into a corresponding process chamber at different times by using the precursor supply device used in this embodiment, that is, the precursor can be alternately transported to the two process chambers (2a, 2b), which meets the requirement of process consistency and reduces the equipment cost.

[0084] An embodiment of the present invention further provides a plasma enhanced atomic layer deposition method, specifically, as shown in FIG. 7, the method includes steps S1′ to S4′:

[0085] In step S1', the two process chambers (2a, 2b) perform steps S11' and S12', respectively, which may be performed synchronously or at different times.

[0086] In step S11', a reactive gas is introduced into the first process chamber 2a and RF power is output to the first process chamber 2a so as to excite the reactive gas to form a plasma, which can react with the precursor adsorbed on the surface of the wafer S to form a required film layer on the surface of the wafer S.

[0087] In step S12', a precursor is introduced into the second process chamber 2b and the precursor is adsorbed on the surface of the wafer S.

[0088] Specifically, taking the plasma enhanced atomic layer deposition apparatus shown in Figures 2 to 5 as an example, in the process of performing steps S11' and S12', the fourth on-off valve 42b, the fifth on-off valve 33 and the first on-off valve 52a are closed, while the third on-off valve 42a, the sixth on-off valve 36, the seventh on-off valve 37 and the second on-off valve 52b are opened, thereby realizing the individual introduction of precursors into the second process chamber 2b (transported by the carrier gas C1).

[0089] At the same time, optionally, a dilution gas is simultaneously introduced into the two process chambers (2a, 2b) using the first dilution branch 53a and the second dilution branch 53b, an equilibrium gas is introduced into the first process chamber 2a using the equilibrium gas transport unit 18a to ensure that the intake volumes of the two process chambers (2a, 2b) are similar, a reactant gas is introduced into the first process chamber 2a using the first reactant gas transport unit 6a, and a first RF power source 82a is opened to apply RF power to the first process chamber 2a through the first matching box 81a, thereby exciting the reactant gas to form plasma.

[0090] In step S2', the two process chambers (2a, 2b) perform steps S21' and S22', respectively, which may be performed synchronously or at different times.

[0091] Step S21' and step S22' are both for purging the precursor supply device and the two process chambers (2a, 2b) of the plasma enhanced atomic layer deposition apparatus.

[0092] Specifically, taking the plasma-enhanced atomic layer deposition apparatus shown in Figures 2 to 5 as an example, in the process of performing steps S21' and S22', the fourth on-off valve 42b, the fifth on-off valve 33, the first on-off valve 52a, the second on-off valve 52b, and the third on-off valve 42a are opened, while the sixth on-off valve 36 and the seventh on-off valve 37 are closed, thereby purging the pipelines and the two process chambers (2a, 2b).

[0093] At the same time, optionally, the first dilution branch 53a and the second dilution branch 53b can be used to simultaneously introduce dilution gas into the two process chambers (2a, 2b), which can also play a purge role, and the two balance gas transport units (18a, 18b) can be used to simultaneously introduce balance gas into the first process chamber 2a and the second process chamber 2b, respectively, which can also play a purge role, and stop the introduction of reaction gas into the second process chamber 2b.

[0094] In step S3', the two process chambers (2a, 2b) perform steps S31' and S32', respectively, which may be performed synchronously or at different times.

[0095] In step S31', a precursor is introduced into the first process chamber 2a and the precursor is adsorbed onto the surface of the wafer S.

[0096] In step S32', a reactive gas is introduced into the second process chamber 2b and RF power is output to the second process chamber 2b so as to excite the reactive gas to form a plasma, which can react with the precursor adsorbed on the surface of the wafer S to form a required film layer on the surface of the wafer S.

[0097] Specifically, taking the plasma enhanced atomic layer deposition apparatus shown in Figures 2 to 5 as an example, in the process of performing steps S31' and S32', the fourth on-off valve 42b, the fifth on-off valve 33 and the second on-off valve 52b are closed, while the third on-off valve 42a, the sixth on-off valve 36, the seventh on-off valve 37 and the first on-off valve 52a are opened, thereby realizing the individual introduction of precursors into the first process chamber 2a (transported by the carrier gas C1).

[0098] At the same time, optionally, a dilution gas is simultaneously introduced into the two process chambers (2a, 2b) using the first dilution branch 53a and the second dilution branch 53b, an equilibrium gas is introduced into the second process chamber 2b using the equilibrium gas transport unit 18b to ensure that the intake volumes of the two process chambers (2a, 2b) are similar, a reactant gas is introduced into the second process chamber 2b using the second reactant gas transport unit 6b, and a second RF power source 82b is opened to apply RF power to the second process chamber 2b through the second matching box 81b, thereby exciting the reactant gas to form plasma.

[0099] In step S4', the two process chambers (2a, 2b) perform steps S41' and S42', respectively, which may be performed synchronously or at different times.

[0100] Steps S41' and S42' are similar to steps S21' and S22' above, and will not be described again here.

[0101] The above steps S1' to S4' are repeated until the thicknesses of the film layers deposited on the two wafers reach the target thickness.

[0102] In summary, in the plasma enhanced atomic layer deposition apparatus and method according to the embodiment of the present invention, the pressure regulator connected to the exhaust ports of the two process chambers can be used to independently control the chamber pressures of the two process chambers, and the RF device connected to the two process chambers can be used to selectively output RF power to at least one of the two process chambers to individually adjust the RF-related parameters of each process chamber, thereby not only increasing the debugging means of the process and improving the process consistency, but also eliminating the need for the two process chambers to perform each process step synchronously, thereby making the process form more diverse, and eliminating the need for a precursor supply device in each chamber, i.e., the precursor or purge gas can be selectively supplied to at least one of the two process chambers through the communication between the precursor supply device and the intake structures of the two process chambers, thereby reducing the device cost.

[0103] It is understood that the above embodiments are merely exemplary embodiments adopted to explain the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications should also be considered as belonging to the protection scope of the present invention.

Claims

1. 1. A plasma enhanced atomic layer deposition apparatus comprising: Two process chambers; a precursor supply device communicating with the intake structures of the two process chambers for selectively supplying a precursor or a purge gas to at least one of the two process chambers; a reactive gas supply device communicating with the intake structures of the two process chambers for selectively supplying a reactive gas to at least one of the two process chambers; an RF device connected to the two process chambers for selectively outputting RF power to at least one of the two process chambers; a pressure adjusting device communicating with the exhaust ports of the two process chambers and for independently controlling the chamber pressures of the two process chambers; the precursor supply device includes a precursor source, an intake line group, a switching line group, and a suction device; the precursor source is in communication with the intake line group via the switching line group, the intake line group being in communication with the intake structures of the two process chambers; the precursor source is for supplying the precursor or a purge gas; the switching line group is for selectively connecting the precursor source to the intake line group or the suction device; the inlet conduits for selectively communicating the precursor source to at least one of the two process chambers; the intake pipe group includes a first intake branch path and a second intake branch path, exhaust ends of the first intake branch path and the second intake branch path are connected to intake structures of the two process chambers, respectively, intake ends of the first intake branch path and the second intake branch path are both connected to the switching pipe group, and the first intake branch path and the second intake branch path are provided with a first on-off valve and a second on-off valve, respectively; the intake pipe group further includes a first dilution branch path and a second dilution branch path, the intake ends of the first dilution branch path and the second dilution branch path are both connected to a dilution gas source for supplying a dilution gas, the exhaust ends of the first dilution branch path and the second dilution branch path are connected to the first intake branch path and the second intake branch path, respectively, and the first dilution branch path and the second dilution branch path are provided with a first flow controller and a second flow controller, respectively.

2. A plasma enhanced atomic layer deposition apparatus, comprising: Two process chambers; a precursor supply device communicating with the intake structures of the two process chambers for selectively supplying a precursor or a purge gas to at least one of the two process chambers; a reactive gas supply device communicating with the intake structures of the two process chambers for selectively supplying a reactive gas to at least one of the two process chambers; an RF device connected to the two process chambers for selectively outputting RF power to at least one of the two process chambers; a pressure adjusting device communicating with the exhaust ports of the two process chambers and for independently controlling the chamber pressures of the two process chambers; the precursor supply device includes a precursor source, an intake line group, a switching line group, and a suction device; the precursor source is in communication with the intake line group via the switching line group, the intake line group being in communication with the intake structures of the two process chambers; the precursor source is for supplying the precursor or a purge gas; the switching line group is for selectively connecting the precursor source to the intake line group or the suction device; the inlet conduits for selectively communicating the precursor source to at least one of the two process chambers; the intake pipe group includes a first intake branch path and a second intake branch path, exhaust ends of the first intake branch path and the second intake branch path are connected to intake structures of the two process chambers, respectively, intake ends of the first intake branch path and the second intake branch path are both connected to the switching pipe group, and the first intake branch path and the second intake branch path are provided with a first on-off valve and a second on-off valve, respectively; the intake pipe group further includes two gas mixing structures, each of the two gas mixing structures having a first intake end, a second intake end and an exhaust end, the first intake ends of the two gas mixing structures respectively communicating with the exhaust ends of the first intake branch path and the second intake branch path, the exhaust ends of the two gas mixing structures respectively communicating with the intake structures of the two process chambers, and the second intake ends of the two gas mixing structures for communicating with an equilibrium gas source for supplying an equilibrium gas and the reactive gas supply device.

3. 3. The plasma-enhanced atomic layer deposition apparatus of claim 2, wherein each of the gas mixing structures includes a gas mixing block and a gas mixing conduit, the gas mixing block is provided with a gas mixing cavity, the first intake end and the second intake end are formed on an outer surface of the gas mixing block, and the outer surface of the gas mixing block is further formed with an exhaust end communicating with the intake end of the gas mixing conduit, the exhaust end of the gas mixing conduit being used as an exhaust end of the gas mixing structure and communicating with the intake structure of the process chamber.

4. 4. The plasma-enhanced atomic layer deposition apparatus according to claim 1, wherein the switching line group includes a first switching branch and a second switching branch, both ends of the first switching branch are connected to the precursor source and the intake line group, respectively, both ends of the second switching branch are connected to the first switching branch and the suction device, respectively, and the first switching branch and the second switching branch are provided with a third on-off valve and a fourth on-off valve, respectively.

5. the precursor source includes a carrier gas main line, a source bottle, a first carrier gas branch line and a second carrier gas branch line, an intake end of the carrier gas main line is connected to a carrier gas source that supplies a carrier gas, an exhaust end of the carrier gas main line is connected to the switching pipe group, and a fifth opening / closing valve and a third mass flow controller are provided in the carrier gas main line; an intake end of the first carrier gas branch path and the carrier gas main path communicate with each other at an upstream position of the fifth on-off valve, an exhaust end of the first carrier gas branch path and the carrier gas main path communicate with each other at a downstream position of the fifth on-off valve, an intake end of the second carrier gas branch path and the carrier gas main path communicate with each other at a downstream position of the fifth on-off valve, an intake end of the second carrier gas branch path and the carrier gas main path communicate with each other at an exhaust end of the source bottle, and a sixth on-off valve and a seventh on-off valve are provided in the first carrier gas branch path and the second carrier gas branch path, respectively; The plasma enhanced atomic layer deposition apparatus of any one of claims 1 to 3, characterized in that the source bottle is for storing a precursor.

6. 3. The plasma enhanced atomic layer deposition apparatus of claim 1, wherein the RF device includes a first matcher, a second matcher, a first RF power source, and a second RF power source, the first RF power source being electrically connected to one of the process chambers via the first matcher, and the second RF power source being electrically connected to another of the process chambers via the second matcher.

7. 3. The plasma enhanced atomic layer deposition apparatus of claim 1, wherein the pressure regulating device includes a first exhaust branch and a second exhaust branch, the intake ends of the first exhaust branch and the second exhaust branch are respectively connected to the exhaust ports of the two process chambers, the exhaust ends of the first exhaust branch and the second exhaust branch are both connected to the suction device, the first exhaust branch and the second exhaust branch are respectively provided with a first shut-off valve and a second shut-off valve, and the first exhaust branch and the second exhaust branch are further respectively provided with a first flow rate regulating valve and a second flow rate regulating valve.

8. Further comprising a remote plasma cleaning device, a first cleaning line and a second cleaning line, the two gas mixing structures each have a third intake end, the intake ends of the first cleaning line and the second cleaning line each communicate with the remote plasma cleaning device, the exhaust ends of the first cleaning line and the second cleaning line each communicate with the two third intake ends, and the first cleaning line and the second cleaning line are respectively provided with a third shutoff valve and a fourth shutoff valve; 4. The plasma enhanced atomic layer deposition apparatus of claim 2 or 3, wherein the remote plasma cleaning device is for providing a plasma capable of cleaning the process chamber.

9. A method for plasma enhanced atomic layer deposition, comprising the steps of: depositing a film layer on two wafers simultaneously using a plasma enhanced atomic layer deposition apparatus according to any one of claims 1 to 3; S1, introducing the precursor into a first process chamber of the two process chambers and the reaction gas into a second process chamber of the two process chambers, and outputting RF power to the second process chamber; Step S2 of purging the precursor supply apparatus and the two process chambers; Step S3: introducing the precursor into the second process chamber and the reaction gas into the first process chamber, and outputting RF power to the first process chamber; and a step S4 of purging the precursor delivery system and the two process chambers; A plasma enhanced atomic layer deposition method, comprising repeating steps S1 to S4 until the thicknesses of the film layers deposited on the two wafers reach a target thickness.

Images