Measurement method and measurement system

Abstract

To provide a technique for measuring capacitance between a measurement device and an edge ring.SOLUTION: A measurement method acquires a measurement value representing capacitance between a measurement device and an edge ring within a chamber. The measurement device includes a base substrate and sensor electrodes provided on the base substrate. The method includes a step for holding the edge ring, of which a conductive film is formed on a surface, on a stage within the chamber. The method includes a step for carrying the measurement device on the stage to a region bounded by the edge ring. The method includes a step for acquiring, with the measurement device carried inside the region, the measurement value representing the capacitance between the measurement device and the edge ring having the conductive film.SELECTED DRAWING: Figure 11

Description

[Technical field]

[0001] Exemplary embodiments of the present disclosure relate to a measurement method and a measurement system. [Background technology]

[0002] Patent Document 1 discloses a method for determining the amount of deviation of the center position of a measuring device placed within an area surrounded by an edge ring from the center position of the area. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-96757 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques for using a measuring device to measure the capacitance between the measuring device and an edge ring. [Means for solving the problem]

[0005] In one exemplary embodiment, a measurement method is provided for obtaining a measurement value representing a capacitance between a measuring device and an edge ring in a chamber of a processing system. The processing system includes a process module, a transport device, and a controller. The process module includes a chamber body that provides a chamber, and a stage that is provided in the chamber and on which the measuring device is placed. The transport device transports the measuring device into the chamber. The controller controls the operation of the transport device. The measuring device includes a base substrate and a plurality of sensor electrodes. The base substrate is disk-shaped. The plurality of sensor electrodes are provided on the base substrate. The method includes a step of holding the edge ring on the stage. The method includes a step of transporting the measuring device to a region on the stage that is surrounded by the edge ring. The method includes a step of obtaining a plurality of measurements representing a capacitance between the measuring device and an edge ring having a conductive film by the measuring device transported inside the region. The edge ring held on the stage includes an edge ring body and a conductive film formed on at least a portion of a surface of the edge ring body and having a different composition from the edge ring body. Effect of the Invention

[0006] According to one exemplary embodiment, the meter can measure the capacitance between the meter and the edge ring. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 illustrates a processing system. [Diagram 2] FIG. 2 is a perspective view illustrating an aligner. [Diagram 3] FIG. 1 illustrates an example of a plasma processing apparatus. [Figure 4] FIG. 2 is a plan view showing an example measuring device as viewed from the top side. [Diagram 5] FIG. 2 is a plan view showing an example measuring device as viewed from the bottom side. [Figure 6] FIG. 2 is a perspective view showing an example of a first sensor in the measuring device. [Figure 7]FIG. 2 is a cross-sectional view of a first sensor in the measuring device. [Figure 8] FIG. 4 is an enlarged view showing an example of a second sensor in the measuring device. [Figure 9] FIG. 2 is a diagram illustrating an example of the configuration of a circuit board in the measuring device. [Figure 10] FIG. 13 is a radial cross-sectional view of an example edge ring. [Figure 11] FIG. 1 is a flow diagram showing an example of a measurement method using a measurement device. [Figure 12] 10 is a schematic cross-sectional view showing a state in which a conductive film is formed on an edge ring. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Various exemplary embodiments are described below.

[0009] In one exemplary embodiment, a measurement method is provided for obtaining a measurement value representing a capacitance between a measuring device and an edge ring in a chamber of a processing system. The processing system includes a process module, a transport device, and a controller. The process module includes a chamber body that provides a chamber, and a stage that is provided in the chamber and on which the measuring device is placed. The transport device transports the measuring device into the chamber. The controller controls the operation of the transport device. The measuring device includes a base substrate and a plurality of sensor electrodes. The base substrate is disk-shaped. The plurality of sensor electrodes are provided on the base substrate. The method includes a step of holding the edge ring on the stage. The method includes a step of transporting the measuring device to a region on the stage that is surrounded by the edge ring. The method includes a step of obtaining a plurality of measurements representing a capacitance between the measuring device and an edge ring having a conductive film by the measuring device transported inside the region. The edge ring held on the stage includes an edge ring body and a conductive film formed on at least a portion of a surface of the edge ring body and having a different composition from the edge ring body.

[0010] In one exemplary embodiment, a measurement system is provided that obtains a measurement value representing a capacitance between a measurement device and an edge ring in a chamber of a processing system. The measurement device includes a base substrate, a plurality of sensor electrodes, and a calculation device. The base substrate is disk-shaped. The plurality of sensor electrodes are provided on the base substrate so as to face outward in a radial direction. The calculation device calculates a plurality of measurement values ​​representing a plurality of capacitances formed by the plurality of sensor electrodes, based on a plurality of digital values ​​output from an A / D converter. The processing system includes a process module, a transport device, and a control unit. The process module includes a chamber body that provides a chamber, and a stage that is provided in the chamber and on which the measurement device is placed. The transport device transports the measurement device into the chamber. The control unit controls the operation of the transport device. An edge ring is held on the stage. The control unit controls the transport device so that the measurement device is transported on the stage to a region surrounded by the edge ring. The calculation device calculates a plurality of measurement values ​​representing a capacitance between the plurality of sensor electrodes of the measurement device transported inside the region and the edge ring having a conductive film. The edge ring has an edge ring body and a conductive film formed on at least a portion of the surface of the edge ring body and having a composition different from that of the edge ring body.

[0011] In the measurement method and measurement system of the above embodiment, a plurality of measurement values ​​representing capacitances corresponding to the distances between the edge ring and a plurality of sensor electrodes of the measurement device transported to the area surrounded by the edge ring are obtained by the measurement device. Since the surface of the edge ring body has a conductive film, the plurality of sensor electrodes and the conductive film of the edge ring face each other, so that the plurality of measurement values ​​representing capacitances are appropriately obtained.

[0012] In one exemplary embodiment, the edge ring body may be formed from an insulator.

[0013] In one exemplary embodiment, the conductive film may include carbon atoms.

[0014] In one exemplary embodiment, the process of holding the edge ring on a stage may include a process of placing the edge ring body on the stage and a process of forming a conductive film on the surface of the edge ring body placed on the stage.

[0015] In one exemplary embodiment, the step of forming a conductive film may include forming the conductive film by CVD.

[0016] In one exemplary embodiment, the CVD may be plasma CVD.

[0017] In one exemplary embodiment, the step of forming the conductive film may include forming the conductive film by a plasma of a gas including a hydrocarbon gas, a hydrofluorocarbon gas, a fluorocarbon gas, or a combination thereof.

[0018] In one exemplary embodiment, the method may include a step of placing a coating member on the stage in a region surrounded by the edge ring body before the step of forming the conductive film, and a step of removing the coating member from the stage in a region surrounded by the edge ring after the step of forming the conductive film.

[0019] In one exemplary embodiment, after obtaining the plurality of measurements, the method may further include removing the conductive film with a plasma that includes atomic oxygen.

[0020] In one exemplary embodiment, the conductive film may be formed on at least a portion of the edge ring body that faces the multiple sensor electrodes of the measuring device.

[0021] In one exemplary embodiment, after obtaining the plurality of measurements, the method may further include adjusting a transport position of the transport apparatus based on the plurality of measurements.

[0022] In one exemplary embodiment, the measuring device may include a high-frequency oscillator, a plurality of C / V conversion circuits, an A / D converter, and a computing device. The high-frequency oscillator is provided to provide a high-frequency signal to the plurality of sensor electrodes. The plurality of C / V conversion circuits generate a plurality of voltage signals corresponding to a plurality of capacitances formed by the plurality of sensor electrodes, respectively. The A / D converter converts the plurality of voltage signals output from the plurality of C / V conversion circuits, respectively, into a plurality of digital values. The computing device calculates a plurality of measurement values ​​representing a plurality of capacitances formed by the plurality of sensor electrodes, respectively, based on the plurality of digital values ​​output from the A / D converter.

[0023] Various embodiments will be described in detail below with reference to the drawings, in which the same or corresponding parts are designated by the same reference numerals.

[0024] First, a processing system having a processing device for processing a workpiece and a transport device for transporting the workpiece to the processing device will be described. FIG. 1 is a diagram illustrating a processing system. The processing system 1 has a function as a semiconductor manufacturing device S1. The processing system 1 includes stages 2a-2d, containers 4a-4d, a loader module LM, an aligner AN, load lock modules LL1, LL2, process modules PM1-PM6, a transfer module TF, and a controller MC. Note that the numbers of the stages 2a-2d, the containers 4a-4d, the load lock modules LL1, LL2, and the process modules PM1-PM6 are not limited and may be any number equal to or greater than one.

[0025] The stages 2a to 2d are arranged along one edge of the loader module LM. The containers 4a to 4d are mounted on the stages 2a to 2d, respectively. Each of the containers 4a to 4d is, for example, a container called a FOUP (Front Opening Unified Pod). Each of the containers 4a to 4d can be configured to accommodate a workpiece W. The workpiece W has a substantially disk shape, such as a wafer.

[0026] The loader module LM has a chamber wall that defines a transfer space therein under atmospheric pressure. A transfer device TU1 is provided in this transfer space. The transfer device TU1 is, for example, an articulated robot, and is controlled by a control unit MC. The transfer device TU1 is configured to transfer the workpiece W between the containers 4a-4d and the aligner AN, between the aligner AN and the load lock modules LL1-LL2, and between the load lock modules LL1-LL2 and the containers 4a-4d.

[0027] The aligner AN is connected to the loader module LM. The aligner AN is configured to adjust (calibrate) the position of the workpiece W. FIG. 2 is a perspective view illustrating the aligner. The aligner AN has a support table 6T, a drive unit 6D, and a sensor 6S. The support table 6T is a table that can rotate about an axis extending in the vertical direction, and is configured to support the workpiece W thereon. The support table 6T is rotated by the drive unit 6D. The drive unit 6D is controlled by the control unit MC. When the support table 6T rotates by the power from the drive unit 6D, the workpiece W placed on the support table 6T also rotates.

[0028] The sensor 6S is an optical sensor, and detects the edge of the workpiece W while the workpiece W is being rotated. From the edge detection result, the sensor 6S detects the amount of deviation of the angular position of the notch WN (or another marker) of the workpiece W relative to the reference angular position, and the amount of deviation of the center position of the workpiece W relative to the reference position. The sensor 6S outputs the amount of deviation of the angular position of the notch WN and the amount of deviation of the center position of the workpiece W to the control unit MC. Based on the amount of deviation of the angular position of the notch WN, the control unit MC calculates the amount of rotation of the support table 6T for correcting the angular position of the notch WN to the reference angular position. The control unit MC controls the drive unit 6D to rotate the support table 6T by this amount of rotation. This allows the angular position of the notch WN to be corrected to the reference angular position. The control unit MC also controls the position of the end effector of the transport device TU1 when receiving the workpiece W from the aligner AN, based on the amount of deviation of the center position of the workpiece W. As a result, the center position of the workpiece W coincides with a predetermined position on the end effector of the transport device TU1.

[0029] 1, each of the load lock modules LL1 and LL2 is provided between the loader module LM and the transfer module TF. Each of the load lock modules LL1 and LL2 provides a preliminary reduced pressure chamber.

[0030] The transfer module TF is airtightly connected to the load lock modules LL1 and LL2 via gate valves. The transfer module TF provides a decompression chamber capable of reducing pressure. A transfer device TU2 is provided in this decompression chamber. The transfer device TU2 is, for example, an articulated robot having a transfer arm TUa, and is controlled by a control unit MC. The transfer device TU2 is configured to transfer a workpiece W between the load lock modules LL1-LL2 and the process modules PM1-PM6, and between any two of the process modules PM1-PM6.

[0031] The process modules PM1 to PM6 are airtightly connected to the transfer module TF via gate valves. Each of the process modules PM1 to PM6 is a processing device configured to perform a dedicated process such as a plasma process on the workpiece W.

[0032] A series of operations when the workpiece W is processed in the processing system 1 is exemplified as follows. The transfer device TU1 of the loader module LM takes out the workpiece W from one of the containers 4a to 4d and transfers the workpiece W to the aligner AN. Then, the transfer device TU1 takes out the workpiece W whose position has been adjusted from the aligner AN and transfers the workpiece W to one of the load lock modules LL1 and LL2. Then, one of the load lock modules reduces the pressure in the preliminary decompression chamber to a predetermined pressure. Then, the transfer device TU2 of the transfer module TF takes out the workpiece W from one of the load lock modules and transfers the workpiece W to one of the process modules PM1 to PM6. Then, one or more of the process modules PM1 to PM6 process the workpiece W. Then, the transfer device TU2 transfers the processed workpiece W from the process module to one of the load lock modules LL1 and LL2. Next, the transfer device TU1 transfers the workpiece W from one of the load lock modules to any one of the containers 4a to 4d.

[0033] As described above, the processing system 1 includes a control unit MC. The control unit MC may be a computer including a processor, a storage device such as a memory, a display device, an input / output device, a communication device, etc. The series of operations of the processing system 1 described above are realized by the control unit MC controlling each part of the processing system 1 according to a program stored in the storage device.

[0034] Fig. 3 is a diagram showing an example of a plasma processing apparatus that can be employed as any one of the process modules PM1 to PM6. The plasma processing apparatus 10 shown in Fig. 3 is a capacitively coupled plasma etching apparatus. The plasma processing apparatus 10 includes a chamber body 12 having a substantially cylindrical shape. The chamber body 12 is made of, for example, aluminum, and an inner wall surface thereof may be anodized. The chamber body 12 is safety grounded.

[0035] A substantially cylindrical support 14 is provided on the bottom of the chamber body 12. The support 14 is made of, for example, an insulating material. The support 14 is provided within the chamber body 12 and extends upward from the bottom of the chamber body 12. A stage ST is provided within a chamber S provided by the chamber body 12. The stage ST is supported by the support 14.

[0036] The stage ST has a lower electrode LE and an electrostatic chuck ESC. The lower electrode LE includes a first plate 18a and a second plate 18b. The first plate 18a and the second plate 18b are made of a metal such as aluminum and have a substantially disk shape. The second plate 18b is provided on the first plate 18a and is electrically connected to the first plate 18a.

[0037] An electrostatic chuck ESC is provided on the second plate 18b. The electrostatic chuck ESC has a structure in which an electrode, which is a conductive film, is disposed between a pair of insulating layers or insulating sheets, and has a substantially disk shape. A DC power supply 22 is electrically connected to the electrode of the electrostatic chuck ESC via a switch 23. The electrostatic chuck ESC attracts the workpiece W by electrostatic force such as Coulomb force generated by a DC voltage from the DC power supply 22. This allows the electrostatic chuck ESC to hold the workpiece W.

[0038] An edge ring body ER1 is placed on the periphery of the second plate 18b. This edge ring body ER1 is formed, for example, in a circular ring shape. When the edge ring body ER1 is placed on the second plate 18b, the edge ring body ER1 surrounds the electrostatic chuck ESC in a plan view. That is, the electrostatic chuck ESC is located within the area surrounded by the edge ring body ER1. When the workpiece W is transferred onto the electrostatic chuck ESC, the edge ring body ER1 surrounds the edge of the workpiece W. That is, the workpiece W is located within the area surrounded by the edge ring body ER1. Similarly, when a measuring device 100 described later is transferred onto the electrostatic chuck ESC, the edge ring ER described later surrounds the edge of the measuring device 100. That is, the measuring device 100 can be located within the area surrounded by the edge ring ER.

[0039] A coolant flow passage 24 is provided inside the second plate 18b. The coolant flow passage 24 constitutes a temperature adjustment mechanism. A coolant is supplied to the coolant flow passage 24 from a chiller unit provided outside the chamber body 12 via a pipe 26a. The coolant supplied to the coolant flow passage 24 is returned to the chiller unit via a pipe 26b. In this manner, the coolant is circulated between the coolant flow passage 24 and the chiller unit. By controlling the temperature of this coolant, the temperature of the workpiece W supported by the electrostatic chuck ESC is controlled.

[0040] A plurality of (for example, three) through holes 25 are formed in the stage ST and pass through the stage ST. The plurality of through holes 25 are formed inside the electrostatic chuck ESC in a plan view. A lift pin 25a is inserted into each of the through holes 25. Note that FIG. 3 illustrates one through hole 25 into which one lift pin 25a is inserted. The lift pin 25a is provided so as to be movable up and down within the through hole 25. As the lift pin 25a rises, the workpiece W supported on the electrostatic chuck ESC rises.

[0041] A plurality of (e.g., three) through holes 27 penetrating the stage ST (lower electrode LE) are formed in the stage ST at positions outside the electrostatic chuck ESC in a plan view. A lift pin 27a is inserted into each of the through holes 27. Note that FIG. 3 illustrates one through hole 27 into which one lift pin 27a is inserted. The lift pin 27a is provided so as to be movable up and down within the through hole 27. As the lift pin 27a rises, the edge ring body ER1 supported on the second plate 18b rises.

[0042] The plasma processing apparatus 10 is also provided with a gas supply line 28. The gas supply line 28 supplies a heat transfer gas, for example, He gas, from a heat transfer gas supply mechanism to between the upper surface of the electrostatic chuck ESC and the back surface of the workpiece W.

[0043] The plasma processing apparatus 10 also includes an upper electrode 30. The upper electrode 30 is disposed above the stage ST and faces the stage ST. The upper electrode 30 is supported on the upper part of the chamber body 12 via an insulating shielding member 32. The upper electrode 30 may include a top plate 34 and a support 36. The top plate 34 faces the chamber S, and is provided with a plurality of gas ejection holes 34a. The top plate 34 may be made of silicon or quartz. Alternatively, the top plate 34 may be formed by forming a plasma-resistant film such as yttrium oxide on the surface of an aluminum base material.

[0044] The support 36 detachably supports the top plate 34 and may be made of a conductive material such as aluminum. The support 36 may have a water-cooled structure. A gas diffusion chamber 36a is provided inside the support 36. A plurality of gas flow holes 36b that communicate with the gas discharge holes 34a extend downward from the gas diffusion chamber 36a. The support 36 is also formed with a gas inlet 36c that introduces a process gas into the gas diffusion chamber 36a, and a gas supply pipe 38 is connected to the gas inlet 36c.

[0045] A gas source group 40 is connected to the gas supply pipe 38 via a valve group 42 and a flow rate controller group 44. The gas source group 40 includes a plurality of gas sources for a plurality of types of gas. In one example, the gas source group 40 may include a source of each of a fluorocarbon gas, a hydrofluorocarbon gas, a hydrocarbon gas, a rare gas, an oxygen-containing gas, a nitrogen gas, a hydrogen gas, and a silicon-containing gas. The source of the fluorocarbon gas may include a source of C4F8 gas, a source of CF4 gas, a source of C4F6 gas, and a source of C5F8 gas. The source of the hydrofluorocarbon gas may include a source of CHF3 gas, a source of CH2F2 gas, and a source of CH3F gas. The source of the hydrocarbon gas may include a source of CH4 gas, a C2H2 gas, a C2H4 gas, a C2H6 gas, a C3H4 gas, a C3H6 gas, a C3H8 gas, a C4H4 gas, a C4H6 gas, a C4H8 gas, or a C4H 10 The source of the oxygen-containing gas may include a source of oxygen gas (O2 gas). The source of the oxygen-containing gas may further include a source of CO gas and / or a source of CO2 gas. The source of the silicon-containing gas may include an aminosilane gas, a silicon alkoxide gas, or a silicon halide gas.

[0046] The valve group 42 includes a plurality of valves, and the flow rate controller group 44 includes a plurality of flow rate controllers such as mass flow controllers. The gas sources in the gas source group 40 are each connected to the gas supply pipe 38 via a corresponding valve in the valve group 42 and a corresponding flow rate controller in the flow rate controller group 44.

[0047] Furthermore, in the plasma processing apparatus 10, a deposit shield 46 is detachably provided along the inner wall of the chamber body 12. The deposit shield 46 is also provided on the outer periphery of the support part 14. The deposit shield 46 prevents etching by-products (deposits) from adhering to the chamber body 12, and may be formed by coating an aluminum material with ceramics such as yttrium oxide.

[0048] An exhaust plate 48 is provided on the bottom side of the chamber body 12 and between the support 14 and the side wall of the chamber body 12. The exhaust plate 48 can be made, for example, by coating ceramics such as yttrium oxide on an aluminum material. A plurality of holes are formed in the exhaust plate 48, penetrating in the plate thickness direction. An exhaust port 12e is provided below the exhaust plate 48 and in the chamber body 12. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52. The exhaust device 50 has a pressure adjustment valve and a vacuum pump such as a turbo molecular pump, and can reduce the pressure of the space in the chamber body 12 to a desired vacuum level. In addition, a load / unload port 12g for the workpiece W is provided on the side wall of the chamber body 12, and the load / unload port 12g can be opened and closed by a gate valve 54.

[0049] The plasma processing apparatus 10 further includes a first high frequency power supply 62 and a second high frequency power supply 64. The first high frequency power supply 62 is a power supply that generates a first high frequency for generating plasma, and generates a high frequency having a frequency of, for example, 27 to 100 MHz. The first high frequency power supply 62 is connected to the upper electrode 30 via a matching device 66. The matching device 66 has a circuit for matching the output impedance of the first high frequency power supply 62 with the input impedance on the load side (upper electrode 30 side). The first high frequency power supply 62 may be connected to the lower electrode LE via the matching device 66.

[0050] The second high frequency power supply 64 is a power supply that generates a second high frequency for attracting ions into the workpiece W, and generates a high frequency with a frequency within a range of, for example, 400 kHz to 13.56 MHz. The second high frequency power supply 64 is connected to the lower electrode LE via a matching device 68. The matching device 68 has a circuit for matching the output impedance of the second high frequency power supply 64 with the input impedance on the load side (the lower electrode LE side).

[0051] In this plasma processing apparatus 10, gas is supplied to the chamber S from one or more selected gas sources among a plurality of gas sources. The pressure in the chamber S is set to a predetermined pressure by the exhaust device 50. The gas in the chamber S is excited by a first high frequency wave from a first high frequency power supply 62. This generates plasma. The workpiece W is then processed by the generated activated species. If necessary, ions may be attracted to the workpiece W by a bias based on the second high frequency wave from a second high frequency power supply 64.

[0052] Next, the measuring instrument 100 will be described. FIG. 4 is a plan view showing the measuring instrument from the top side. FIG. 5 is a plan view showing the measuring instrument from the bottom side. The measuring instrument 100 shown in FIGS. 4 and 5 includes a base substrate 102 having an upper surface 102a and a lower surface 102b. The base substrate 102 is made of, for example, silicon, and has a shape similar to that of the workpiece W, that is, a substantially disk shape. The diameter of the base substrate 102 is the same as that of the workpiece W, and is, for example, 300 mm. The shape and dimensions of the measuring instrument 100 are determined by the shape and dimensions of the base substrate 102. Therefore, the measuring instrument 100 has a shape similar to that of the workpiece W, and has dimensions similar to those of the workpiece W. In addition, a notch 102N (or another marker) is formed on the edge of the base substrate 102.

[0053] A plurality of first sensors 104A to 104C for measuring capacitance are provided on the base substrate 102. The plurality of first sensors 104A to 104C are arranged along the edge of the base substrate 102, for example, around the entire circumference of the edge, at equal intervals in the circumferential direction. Specifically, each of the plurality of first sensors 104A to 104C is provided along the edge on the upper surface side of the base substrate 102. The front end surface of each of the plurality of first sensors 104A to 104C is aligned along the side surface of the base substrate 102.

[0054] In addition, the base substrate 102 is provided with a plurality of second sensors 105A to 105C for measuring capacitance. The second sensors 105A to 105C are arranged along the edge of the base substrate 102, for example, around the entire circumference of the edge, at equal intervals in the circumferential direction. Specifically, each of the second sensors 105A to 105C is provided along the edge on the lower surface side of the base substrate. The sensor electrodes 161 of each of the second sensors 105A to 105C extend along the extending direction of the lower surface 102b of the base substrate 102. The second sensors 105A to 105C and the first sensors 104A to 104C are arranged alternately at 60° intervals in the circumferential direction. In the following description, the first sensors 104A to 104C and the second sensors 105A to 105C may be collectively referred to as capacitance sensors.

[0055] A circuit board 106 is provided at the center of the upper surface 102a of the base substrate 102. Between the circuit board 106 and the first sensors 104A to 104C, wiring groups 108A to 108C are provided for electrically connecting the sensors to each other. Between the circuit board 106 and the second sensors 105A to 105C, wiring groups 208A to 208C are provided for electrically connecting the sensors to each other. The circuit board 106, the wiring groups 108A to 108C, and the wiring groups 208A to 208C are covered by a cover 103.

[0056] The first sensor will be described in detail below. FIG. 6 is a perspective view showing an example of a sensor. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 6. The first sensor 104 shown in FIGS. 6 and 7 is a sensor used as a plurality of first sensors 104A-104C of the measuring device 100, and in one example, is configured as a chip-shaped component. In the following description, an XYZ orthogonal coordinate system will be referred to as appropriate. The X direction indicates the front direction of the first sensor 104, the Y direction is a direction perpendicular to the X direction and indicates the width direction of the first sensor 104, and the Z direction is a direction perpendicular to the X direction and the Y direction and indicates the upward direction of the first sensor 104.

[0057] The first sensor 104 has an electrode 141 , a guard electrode 142 , a sensor electrode 143 , a substrate portion 144 and an insulating region 147 .

[0058] The substrate 144 is made of, for example, borosilicate glass or quartz. The substrate 144 has an upper surface 144a, a lower surface 144b, and a front end surface 144c. The guard electrode 142 is provided below the lower surface 144b of the substrate 144, and extends in the X and Y directions. The electrode 141 is provided below the guard electrode 142 via an insulating region 147, and extends in the X and Y directions. The insulating region 147 is made of, for example, SiO2, SiN, Al2O3, or polyimide.

[0059] The front end surface 144c of the substrate portion 144 is formed in a stepped shape. The lower portion 144d of the front end surface 144c protrudes outward in the horizontal direction more than the upper portion 144u of the front end surface 144c. The sensor electrode 143 extends along the upper portion 144u of the front end surface 144c. In one exemplary embodiment, the upper portion 144u and the lower portion 144d of the front end surface 144c are curved surfaces each having a predetermined curvature. That is, the upper portion 144u of the front end surface 144c has a constant curvature at any position of the upper portion 144u, and the curvature of the upper portion 144u is the reciprocal of the distance between the central axis AX100 of the measuring device 100 and the upper portion 144u of the front end surface 144c. In addition, the lower portion 144d of the front end face 144c has a constant curvature at any position of the lower portion 144d, and the curvature of the lower portion 144d is the reciprocal of the distance between the central axis AX100 of the measuring instrument 100 and the lower portion 144d of the front end face 144c.

[0060] The sensor electrode 143 is provided along an upper portion 144u of the front end surface 144c. In one exemplary embodiment, the front surface 143f of the sensor electrode 143 is also curved. That is, the front surface 143f of the sensor electrode 143 has a constant curvature at any position on the front surface 143f, and the curvature is the reciprocal of the distance between the central axis AX100 of the measuring device 100 and the front surface 143f.

[0061] When first sensor 104 is used as a sensor of measuring device 100, electrode 141 is connected to wiring 181, guard electrode 142 is connected to wiring 182, and sensor electrode 143 is connected to wiring 183, as described below.

[0062] In the first sensor 104, the sensor electrode 143 is shielded from below the first sensor 104 by the electrode 141 and the guard electrode 142. Therefore, according to the first sensor 104, it is possible to measure the capacitance with high directivity in a specific direction, that is, in the direction in which the front surface 143f of the sensor electrode 143 faces (X direction).

[0063] The second sensor will be described below. FIG. 8 is a partially enlarged view of FIG. 5, showing one second sensor. The second sensor 105 has a sensor electrode 161. The edge of the sensor electrode 161 is partially arc-shaped. For example, the sensor electrode 161 has a planar shape defined by an inner edge 161a, an outer edge 161b, and a side edge 161c. As an example, the outer edge 161b is arc-shaped with a radius centered on the central axis AX100, and the side edge 161c and the inner edge 161a are linear. The outer edges 161b on the radially outer side of the sensor electrodes 161 of the multiple second sensors 105A to 105C extend on a common circle. The curvature of a part of the edge of the sensor electrode 161 matches the curvature of the edge of the electrostatic chuck ESC. In one exemplary embodiment, the curvature of the outer edge 161b forming the radially outer edge of the sensor electrode 161 matches the curvature of the edge of the electrostatic chuck ESC. Note that the center of curvature of the outer edge 161b, i.e., the center of the circle on which the outer edge 161b extends, shares the central axis line AX100.

[0064] In one exemplary embodiment, the second sensor 105 further includes a guard electrode 162 surrounding the sensor electrode 161. The guard electrode 162 has a frame shape and surrounds the sensor electrode 161 over its entire periphery. The guard electrode 162 and the sensor electrode 161 are spaced apart from each other such that an electrically insulating region 164 is interposed between them. In one exemplary embodiment, the second sensor 105 further includes an electrode 163 surrounding the guard electrode 162 on the outside of the guard electrode 162. The electrode 163 has a frame shape and surrounds the guard electrode 162 over its entire periphery. The guard electrode 162 and the electrode 163 are spaced apart from each other such that an electrically insulating region 165 is interposed between them.

[0065] The configuration of circuit board 106 will be described below. Fig. 9 is a diagram illustrating the configuration of a circuit board of a measuring device. Circuit board 106 has high-frequency oscillator 171, a plurality of C / V conversion circuits 172A-172C, a plurality of C / V conversion circuits 272A-272C, A / D converter 173, processor 174, storage device 175, communication device 176, and power supply 177. In one example, processor 174, storage device 175, etc. form a calculation device.

[0066] Each of the first sensors 104A-104C is connected to the circuit board 106 via a corresponding one of the wiring groups 108A-108C. Also, each of the first sensors 104A-104C is connected to a corresponding one of the C / V conversion circuits 172A-172C via some wires included in the corresponding wiring group. Each of the second sensors 105A-105C is connected to the circuit board 106 via a corresponding one of the wiring groups 208A-208C. Also, each of the second sensors 105A-105C is connected to a corresponding one of the C / V conversion circuits 272A-272C via some wires included in the corresponding wiring group. Below, a description will be given of one first sensor 104 having the same configuration as each of first sensors 104A-104C, one wiring group 108 having the same configuration as each of wiring groups 108A-108C, and one C / V conversion circuit 172 having the same configuration as each of C / V conversion circuits 172A-172C. Also, a description will be given of one second sensor 105 having the same configuration as each of second sensors 105A-105C, one wiring group 208 having the same configuration as each of wiring groups 208A-208C, and one C / V conversion circuit 272 having the same configuration as each of C / V conversion circuits 272A-272C.

[0067] The wiring group 108 includes wirings 181 to 183. One end of the wiring 181 is connected to the electrode 141. The wiring 181 is connected to a ground potential line GL that is connected to the ground G of the circuit board 106. The wiring 181 may be connected to the ground potential line GL via a switch SWG. One end of the wiring 182 is connected to the guard electrode 142, and the other end of the wiring 182 is connected to the C / V conversion circuit 172. One end of the wiring 183 is connected to the sensor electrode 143, and the other end of the wiring 183 is connected to the C / V conversion circuit 172.

[0068] The wiring group 208 includes wirings 281 to 283. One end of the wiring 281 is connected to the electrode 163. The wiring 281 is connected to a ground potential line GL that is connected to the ground G of the circuit board 106. The wiring 281 may be connected to the ground potential line GL via a switch SWG. One end of the wiring 282 is connected to the guard electrode 162, and the other end of the wiring 282 is connected to the C / V conversion circuit 272. One end of the wiring 283 is connected to the sensor electrode 161, and the other end of the wiring 283 is connected to the C / V conversion circuit 272.

[0069] The high-frequency oscillator 171 is connected to a power source 177 such as a battery, and is configured to generate a high-frequency signal by receiving power from the power source 177. The power source 177 is also connected to the processor 174, the storage device 175, and the communication device 176. The high-frequency oscillator 171 has a plurality of output lines. The high-frequency oscillator 171 provides the generated high-frequency signal to the wiring 182, the wiring 183, and the wiring 282 and the wiring 283 through the plurality of output lines. Therefore, the high-frequency oscillator 171 is electrically connected to the guard electrode 142 and the sensor electrode 143 of the first sensor 104, and the high-frequency signal from the high-frequency oscillator 171 is provided to the guard electrode 142 and the sensor electrode 143. The high-frequency oscillator 171 is also electrically connected to the sensor electrode 161 and the guard electrode 162 of the second sensor 105, and the high-frequency signal from the high-frequency oscillator 171 is provided to the sensor electrode 161 and the guard electrode 162.

[0070] The input of the C / V conversion circuit 172 is connected to a wiring 182 connected to the guard electrode 142 and a wiring 183 connected to the sensor electrode 143. That is, the input of the C / V conversion circuit 172 is connected to the guard electrode 142 and the sensor electrode 143 of the first sensor 104. Also, the input of the C / V conversion circuit 272 is connected to the sensor electrode 161 and the guard electrode 162. The C / V conversion circuit 172 and the C / V conversion circuit 272 are configured to generate voltage signals having amplitudes corresponding to the potential difference at their inputs and output the voltage signals. The C / V conversion circuit 172 generates a voltage signal corresponding to the capacitance formed by the corresponding first sensor 104. That is, the larger the capacitance of the sensor electrode connected to the C / V conversion circuit 172, the larger the voltage of the voltage signal output by the C / V conversion circuit 172. Similarly, the larger the capacitance of the sensor electrode connected to the C / V conversion circuit 272, the larger the voltage of the voltage signal output by the C / V conversion circuit 272.

[0071] The outputs of the C / V conversion circuit 172 and the C / V conversion circuit 272 are connected to the input of the A / D converter 173. The A / D converter 173 is also connected to a processor 174. The A / D converter 173 is controlled by a control signal from the processor 174, and converts the output signal (voltage signal) of the C / V conversion circuit 172 and the output signal (voltage signal) of the C / V conversion circuit 272 into a digital value and outputs it to the processor 174 as a detection value.

[0072] A storage device 175 is connected to the processor 174. The storage device 175 is a storage device such as a volatile memory, and is configured to store, for example, measurement data. Another storage device 178 is also connected to the processor 174. The storage device 178 is a storage device such as a non-volatile memory, and stores, for example, a program that is read and executed by the processor 174.

[0073] The communication device 176 is a communication device that complies with any wireless communication standard. For example, the communication device 176 complies with Bluetooth (registered trademark). The communication device 176 is configured to wirelessly transmit the measurement data stored in the storage device 175.

[0074] Processor 174 is configured to control each part of measuring device 100 by executing the above-mentioned program. For example, processor 174 controls the supply of high-frequency signals from high-frequency oscillator 171 to guard electrode 142, sensor electrode 143, sensor electrode 161, and guard electrode 162. Processor 174 also controls the power supply from power source 177 to storage device 175, the power supply from power source 177 to communication device 176, and the like. Furthermore, processor 174 executes the above-mentioned program to obtain the measured values ​​of first sensor 104 and second sensor 105 based on the detected values ​​input from A / D converter 173. In one embodiment, when the detected value output from A / D converter 173 is X, processor 174 obtains the measured values ​​based on the detected values ​​so that the measured values ​​are proportional to (a·X+b). Here, a and b are constants that change depending on the circuit state, etc. The processor 174 may have, for example, a predetermined arithmetic expression (function) that causes the measured value to be proportional to (a·X+b).

[0075] FIG. 10 is a cross-sectional view showing the measuring device 100 and the edge ring ER placed on the electrostatic chuck ESC. In an example of a measuring method and measuring system, the electrostatic capacitance between the edge ring ER placed on the second plate 18b and the measuring device 100 placed on the electrostatic chuck ESC is measured. As shown in FIG. 10, the edge ring ER includes an edge ring body ER1 and a conductive film F. The edge ring body ER1 has a first portion P1 and a second portion P2. The first portion P1 and the second portion P2 are integrally formed. The second portion P2 is a portion above the first portion P1. The first portion P1 and the second portion P2 have an annular plate shape. The first portion P1 and the second portion P2 have a common central axis. The outer diameter of the second portion P2 may be the same as the outer diameter of the first portion P1. The inner diameter of the first portion P1 is smaller than the inner diameter of the second portion P2.

[0076] The inner diameter of the first portion P1 is smaller than the outer diameter of the measuring device 100, and the inner diameter of the second portion P2 is larger than the outer diameter of the measuring device 100. The inner diameter of the second portion P2 is the inner diameter of the inner circumferential surface P2a of the second portion P2. In one example, the inner circumferential surface P2a of the second portion P2 is an inclined surface that widens outward toward the upper side. In this case, the outer diameter of the measuring device 100 may be smaller than the inner diameter of the lower end of the inner circumferential surface P2a. Note that the inner circumferential surface P2a does not necessarily need to be inclined, and may be, for example, a cylindrical vertical surface.

[0077] The workpiece W may be placed on the electrostatic chuck ESC such that an edge of the workpiece W is located above the first portion P1 in the inner region of the second portion P2. Similarly, the measuring device 100 may be placed on the electrostatic chuck ESC such that an edge of the workpiece W is located above the first portion P1 in the inner region of the second portion P2. When the measuring device 100 is placed on the electrostatic chuck ESC, the sensor electrode 143 of the first sensor 104 of the measuring device 100 may face the inner circumferential surface P2a of the edge ring body ER1.

[0078] The edge ring body ER1 may be made of an insulator. The edge ring body ER1 may also be made of a material other than an insulator, for example, a semiconductor. Examples of materials for the edge ring body ER1 include single crystal silicon, quartz, silicon carbide, etc.

[0079] The conductive film F is a film having a different composition and conductivity from that of the edge ring body ER1, and is formed on at least a part of the surface of the edge ring body ER1. The conductive film F has a higher conductivity than that of the edge ring body ER1. For example, the conductive film F may be a carbon-based film containing carbon atoms, and an example of the conductive film F may be a graphite thin film. The conductivity of the conductive film F may be, for example, about 0.25 S / cm or more. The conductive film F is formed at least on a part of the edge ring body ER1 that faces the multiple sensor electrodes 143 of the measuring device 100. In the illustrated example, the conductive film F is formed on the entire surface of the upper surface P2b and the entire surface of the inner peripheral surface P2a of the second portion P2 of the surface of the edge ring body ER1. In the illustrated example, the conductive film F is also formed on the upper surface P1a of the first portion P1 of the edge ring body ER1 in a region close to the inner peripheral surface P2a. For example, the thickness of the conductive film F formed on the entire surface of the upper surface P2b and the entire surface of the inner peripheral surface P2a may be substantially uniform. The thickness of the conductive film F is not particularly limited. The method for forming the conductive film F is not particularly limited, but for example, the conductive film F may be formed by CVD (Chemical Vapor Deposition). The CVD may be plasma CVD (Plasma Chemical Vapor Deposition), or a CVD method that utilizes heat, light, or the like.

[0080] Such a measuring device 100 may be disposed in a region surrounded by an edge ring ER in a process module. In this state, the multiple sensor electrodes 143 and the guard electrode 142 face a conductive film F formed on the inner circumferential surface P2a of the edge ring ER. A measurement value generated based on a potential difference between the signal of the sensor electrode 143 and the signal of the guard electrode 142 represents a capacitance reflecting a distance between each of the multiple sensor electrodes 143 and the edge ring ER. The capacitance C is expressed as C=εS / d. ε is the dielectric constant of the medium between the front surface 143f of the sensor electrode 143 and the edge ring ER, S is the area of ​​the front surface 143f of the sensor electrode 143, and d can be regarded as the distance between the front surface 143f of the sensor electrode 143 and the inner edge of the edge ring ER. The inner edge of the edge ring ER may be a conductive film F formed on the inner circumferential surface P2a.

[0081] Therefore, the measuring device 100 can obtain measurement data reflecting the relative positional relationship between the measuring device 100 simulating the workpiece W and the edge ring ER. For example, the multiple measurement values ​​obtained by the measuring device 100 become smaller as the distance between the front surface 143f of the sensor electrode 143 and the inner edge of the edge ring ER increases. Therefore, the amount of deviation of each sensor electrode 143 in each radial direction of the edge ring ER can be obtained based on the measurement value representing the capacitance of each sensor electrode 143 of the first sensors 104A to 104C. Then, the error of the transport position of the measuring device 100 can be obtained from the amount of deviation of each sensor electrode 143 of the first sensors 104A to 104C in each radial direction. That is, the amount of deviation between the center position of the edge ring ER and the center position of the measuring device 100 can be obtained.

[0082] In addition, when the measuring device 100 is placed on the electrostatic chuck ESC, the multiple sensor electrodes 161 and the guard electrode 162 of the second sensor 105 face the electrostatic chuck ESC. As described above, the electrostatic capacitance C is expressed as C=εS / d. ε is the dielectric constant of the medium between the sensor electrode 161 and the electrostatic chuck ESC, d is the distance between the sensor electrode 161 and the electrostatic chuck ESC, and S can be regarded as the area where the sensor electrode 161 and the electrostatic chuck ESC overlap each other in a plan view. The area S changes depending on the relative positional relationship between the measuring device 100 and the electrostatic chuck ESC. Therefore, the measuring device 100 can obtain measurement data that reflects the relative positional relationship between the measuring device 100 simulating the workpiece W and the electrostatic chuck ESC.

[0083] In one example, when the measuring device 100 is transported to a predetermined transport position, that is, a position on the electrostatic chuck ESC where the center of the electrostatic chuck ESC and the center of the measuring device 100 coincide with each other, the outer edge 161b of the sensor electrode 161 may coincide with the edge of the electrostatic chuck ESC. In this case, for example, when the transport position of the measuring device 100 is shifted from the predetermined transport position, and the sensor electrode 161 is shifted radially outward with respect to the electrostatic chuck ESC, the area S becomes smaller. That is, the capacitance measured by the sensor electrode 161 becomes smaller than the capacitance when the measuring device 100 is transported to the predetermined transport position. Therefore, the amount of deviation of each sensor electrode 161 in each radial direction of the electrostatic chuck ESC can be obtained based on the measured value representing the capacitance of each sensor electrode 161 of the second sensors 105A to 105C. Then, the error of the transport position of the measuring device 100 can be obtained from the amount of deviation of each sensor electrode 161 of the second sensors 105A to 105C in each radial direction. That is, the amount of deviation between the center position of the electrostatic chuck ESC and the center position of the measuring device 100 can be obtained.

[0084] As described above, the measuring device 100, as an example, can obtain the amount of deviation between the center position of the edge ring ER and the center position of the measuring device 100, and the amount of deviation between the center position of the electrostatic chuck ESC and the center position of the measuring device 100. In this case, the amount of deviation between the center position of the electrostatic chuck ESC and the center position of the edge ring ER may be obtained. This amount of deviation may be a vector combination of the amount of deviation between the center position of the edge ring ER and the center position of the measuring device 100 and the amount of deviation between the center position of the electrostatic chuck ESC and the center position of the measuring device 100.

[0085] A method for measuring capacitance by the measuring device 100 will be described below. FIG. 11 shows a flow of a measurement method according to an exemplary embodiment. In the method shown in FIG. 11, a flow is shown for acquiring capacitance between a plurality of sensor electrodes 143 and an edge ring ER having a conductive film F, using an edge ring body ER1 on which a conductive film F is not formed in an initial state. In a semiconductor manufacturing apparatus such as the processing system 1, the edge ring is consumed with use, and therefore needs to be replaced periodically. When replacing the edge ring, it is important to place the workpiece W and the edge ring in an optimal positional relationship in order to stabilize productivity. When checking the installation position of the replaced edge ring, it is generally necessary to open the chamber. Therefore, the replacement work may be complicated. Therefore, it is desired to transport the edge ring with high accuracy by a simple method.

[0086] As described above, the transfer device TU2 in the processing system 1 is controlled by the controller MC. In one exemplary embodiment, the transfer device TU2 can transfer the edge ring ER or the edge ring main body ER1 onto the second plate 18b based on transfer position data transmitted from the controller MC. The transfer device TU2 can also transfer the workpiece W and the measuring device 100 onto the placement region R of the electrostatic chuck ESC based on the transfer position data transmitted from the controller MC.

[0087] In one example, any one of the process modules PM1 to PM6 may be used as a storage location for the edge ring ER or the edge ring body ER1. As described above, the process modules PM1 to PM6 are airtightly connected to the transfer module TF via a gate valve. In this case, the edge ring ER or the edge ring body ER1 can be replaced by the transfer device TU2 without exposing the process module to the atmosphere.

[0088] In the measurement method shown in FIG. 11, step ST1 is first performed. In step ST1, an edge ring body ER1 on whose surface a conductive film F is not formed is carried into a process module. For example, the transport device TU2 transports the edge ring body ER1 onto the second plate 18b in the chamber S so that the electrostatic chuck ESC is located inside the area surrounded by the edge ring body ER1. The edge ring body ER1 is transported by the transport device TU2 based on the transport position data while being placed on the transport arm TUa. The transport position data may be, for example, coordinate data that is predetermined so that the center position of the edge ring body ER1 coincides with the center position of the electrostatic chuck ESC. The transported edge ring body ER1 is supported by the lift pins 27a and placed so as to surround the electrostatic chuck ESC as the lift pins 27a descend.

[0089] In the subsequent step ST2, a covering member is placed in a region surrounded by the edge ring body ER1 on the stage ST. For example, a protective substrate W1 is transferred as a covering member onto the electrostatic chuck ESC, which is the inner region of the edge ring body ER1 transferred in step ST1. FIG. 12 shows a state in which the protective substrate W1 is placed on the electrostatic chuck ESC inside the edge ring body ER1. When the protective substrate W1 is placed on the electrostatic chuck ESC, the entire upper surface of the electrostatic chuck ESC is covered by the protective substrate W1. Also, an inner portion of the upper surface P1a of the first portion P1 of the edge ring body ER1 is covered by the protective substrate W1 when viewed from above.

[0090] The protective substrate W1 may be, for example, a bare silicon substrate having substantially the same shape as the measuring instrument 100. For example, the transfer device TU1 transfers the protective substrate W1 to one of the load lock modules LL1 and LL2. Then, the transfer device TU2 transfers the protective substrate W1 from one of the load lock modules to a process module based on the transfer position data, and places the protective substrate W1 on the electrostatic chuck ESC in the chamber S. The transfer position data is, for example, coordinate data that is determined in advance so that the position of the central axis of the protective substrate W1 coincides with the center position of the electrostatic chuck ESC. Note that, like the edge ring body ER1, any of the process modules PM1 to PM6 may be used as a storage location for the protective substrate W1.

[0091] In the subsequent step ST3, a conductive film F is formed on the surface of the edge ring body ER1 placed on the second plate 18b. In step ST3, the conductive film F is formed by plasma CVD. In step ST3 using plasma CVD, a film forming gas is supplied into the chamber S, and plasma is generated from the film forming gas in the chamber S. In this case, the control unit MC controls the flow rate controller group 44 connected to the gas source group 40 and the like so as to supply the film forming gas into the chamber S. In addition, the control unit MC controls the exhaust device 50 so as to set the pressure in the chamber S to a designated pressure. The control unit MC can control the first high frequency power supply 62 to supply high frequency power in order to generate plasma from the film forming gas. For example, the frequency of the supplied high frequency power may be about 10 MHz to 100 MHz.

[0092] The deposition gas may be, for example, a hydrocarbon gas, a hydrofluorocarbon gas, a fluorocarbon gas, or a combination thereof. The deposition gas may further contain a rare gas such as He, Ne, Ar, Kr, or Xe for pressure adjustment. The pressure of the deposition gas may be set to, for example, 0.1 Torr or more. In step ST3, as an example, a hydrocarbon gas and a rare gas are supplied into the chamber S as deposition gas, and a conductive film F, which is an organic film having conductivity, can be formed inside the chamber S by generating plasma from the supplied deposition gas. For example, during the crystal growth of carbon, the crystallinity is disturbed by carbon atoms that are not incorporated into the crystal arrangement, and amorphous carbon is generated as an amorphous portion. Due to this amorphous portion, the formed film has conductivity.

[0093] In addition, the rare gas contained in the deposition gas can easily maintain glow discharge, realize uniform stabilization of plasma, and contribute to the formation of a low-resistance organic film. In addition, when a fluorocarbon gas or a hydrofluorocarbon gas is added to the deposition gas, hydrogen is desorbed by the scavenging effect of fluorine, so that a conductive film with higher conductivity can be formed.

[0094] Furthermore, the conductivity of the organic film that is formed depends on the hydrogen concentration in the film. By increasing the temperature of the edge ring body ER1 and desorbing hydrogen, a conductive film F with higher conductivity can be formed. In one example, a temperature control mechanism including a heater or the like for adjusting the temperature of the edge ring body ER1 may be provided on the stage ST.

[0095] 12, a conductive film F is formed on the upper surface of the protective substrate W1, the upper surface P2b and the inner circumferential surface P2a of the second portion P2 of the edge ring body ER1, and a portion of the upper surface P1a of the first portion P1 that is not covered by the protective substrate W1. The edge ring ER having the conductive film F is held on the second plate 18b by the processes from step ST1 to step ST3. Note that a purging process may be performed after step ST3. In the purging process, a purging gas is supplied into the chamber S and then exhausted. The purging gas is, for example, an inert gas such as nitrogen or argon.

[0096] In the subsequent step ST4, the protective substrate W1 is unloaded from the region surrounded by the edge ring ER on the stage ST (i.e., from above the electrostatic chuck ESC). That is, in step ST4, the protective substrate W1 is unloaded from the process module and returned to any one of the transfer module TF, the load lock modules LL1 and LL2, the loader module LM, and the containers 4a to 4d.

[0097] In the next step ST5, the measuring device 100 is transported onto the electrostatic chuck ESC, which is an area surrounded by the edge ring ER on the stage ST. Specifically, the transport device TU1 transports the measuring device 100 to one of the load lock modules LL1 and LL2. Then, the transport device TU2 transports the measuring device 100 from one of the load lock modules to a process module based on the transport position data, and places the measuring device 100 on the electrostatic chuck ESC. The transport position data is, for example, coordinate data that is determined in advance so that the position of the central axis AX100 of the measuring device 100 coincides with the center position of the electrostatic chuck ESC. Note that, like the edge ring body ER1, any of the process modules PM1 to PM6 may be used as a storage location for the measuring device 100.

[0098] In the next step ST6, the transported measuring instrument 100 acquires a plurality of measurement values ​​representing the capacitance between the plurality of sensor electrodes 143 and the edge ring ER having the conductive film F. Specifically, the measuring instrument 100 acquires a plurality of digital values ​​(measurement values) corresponding to the magnitude of the capacitance between the edge ring ER (inner circumferential surface P2a) and each of the sensor electrodes 143 of the first sensors 104A to 104C, and stores the plurality of digital values ​​in the storage device 175. The measuring instrument 100 also acquires a plurality of digital values ​​(measurement values) corresponding to the magnitude of the capacitance between the electrostatic chuck ESC and each of the sensor electrodes 161 of the second sensors 105A to 105C, and stores the plurality of digital values ​​in the storage device 175. The plurality of digital values ​​may be acquired at a predetermined timing under the control of the processor 174.

[0099] In the subsequent step ST7, position information is acquired based on the multiple measured values ​​measured in step ST6. The position information may be the amount of deviation between the center position of the edge ring ER and the center position of the measuring device 100, the amount of deviation between the center position of the electrostatic chuck ESC and the center position of the measuring device 100, the amount of deviation between the center position of the electrostatic chuck ESC and the center position of the edge ring ER, or the like. The position information may also be the amount of deviation between the transfer position data (coordinate data) of the measuring device 100 and the actual transfer position of the measuring device 100. The position information may also be the amount of deviation between the transfer position data (coordinate data) of the edge ring ER and the actual transfer position of the edge ring ER. For example, in step ST7, multiple digital values ​​stored in the storage device 175 are transmitted to the control unit MC. The multiple digital values ​​may be transmitted from the communication device 176 to the control unit MC by a command from the control unit MC. Next, the control unit MC obtains the above-mentioned position information based on the multiple digital values ​​received. The position information may be obtained by the processor 174 of the measuring device 100. In this case, the obtained position information may be transmitted to the control unit MC.

[0100] In the following step ST8, the measuring device 100 is carried out from the process module and returned to the transfer module TF, the load lock modules LL1 and LL2, the loader module LM, or any one of the containers 4a to 4d.

[0101] In the next step ST9, it is determined whether or not the position of the transport by the transport devices TU1 and TU2 needs to be adjusted. For example, the control unit MC determines whether or not the deviation between the transport position data (coordinate data) of the measuring device 100 and the actual transport position of the measuring device 100 exceeds a predetermined threshold. The control unit MC also determines whether or not the deviation between the transport position data (coordinate data) of the edge ring ER and the actual transport position of the edge ring ER exceeds a predetermined threshold. If it is determined that the deviation is equal to or less than the predetermined threshold, it is confirmed that the measuring device 100 and the edge ring ER have been transported accurately. In this case, the process proceeds to the next step ST11. On the other hand, if it is determined that the deviation is greater than the threshold, the process proceeds to step ST10.

[0102] In step ST10, the transfer position by the transfer device is adjusted based on a plurality of measured values. For example, based on the deviation amount derived in step ST7, the transfer position data of the edge ring ER is adjusted so that the center position of the electrostatic chuck ESC and the center position of the edge ring ER coincide with each other. Then, based on the corrected transfer position data, the edge ring ER is transferred again by the transfer device TU2 so that the center position of the edge ring ER coincides with the center position of the electrostatic chuck ESC. In this case, for example, the edge ring ER is once transferred from the second plate 18b to a process module used as a storage location. Then, the edge ring ER is supported again by the transfer arm TUa, and the edge ring ER is transferred onto the second plate 18b. Note that, in the position adjustment of the edge ring ER, the edge ring ER does not have to be returned to the storage location. For example, the edge ring may be supported by the transfer arm TUa, and the transfer arm TUa may be moved by the third deviation amount to adjust the transfer position of the edge ring ER. Furthermore, in step ST10, based on the amount of deviation derived in step ST7, the transfer position data of the measuring device 100 is adjusted so that the center position of the electrostatic chuck ESC coincides with the center position of the measuring device 100. Then, the process returns to step ST5 again.

[0103] In the subsequent step ST11, the conductive film F formed on the edge ring ER is removed (ashed) by plasma containing oxygen atoms. In step ST11, a removal gas is supplied into the chamber S, and plasma is generated from the removal gas in the chamber S. In this case, the control unit MC controls the flow rate controller group 44 connected to the gas source group 40 and the like to supply the removal gas into the chamber S. The control unit MC also controls the exhaust device 50 to set the pressure in the chamber S to a designated pressure. The control unit MC can control the first high frequency power supply 62 to supply high frequency power to generate plasma from the removal gas. The removal gas may be, for example, oxygen gas (O2). After the end of step ST11, the transfer position data used by the transfer device is in a calibrated state, so that after the protection substrate W1 is transferred out, the workpiece W can be transferred with high accuracy to a predetermined position on the electrostatic chuck ESC. When step ST11 is performed, the protection substrate W1 may be transferred into a region surrounded by the edge ring ER on the stage ST. The protective substrate W1 to be carried in may be the protective substrate W1 carried out in step ST4, or may be another protective substrate W1 on whose surface the conductive film F is not formed.

[0104] As described above, in one exemplary embodiment, a measurement method is provided for obtaining a measurement value representing a capacitance between the measuring device 100 and the edge ring ER in the chamber S of the processing system 1. The processing system 1 includes a process module PM, transfer devices TU1 and TU2, and a controller MC. The process module PM includes a chamber body 12 that provides the chamber S, and a stage ST that is provided in the chamber S and on which the measuring device 100 is placed. The transfer devices TU1 and TU2 transfer the measuring device 100 into the chamber S. The controller MC controls the operation of the transfer devices TU1 and TU2. The measuring device 100 includes a base substrate 102 and a plurality of sensor electrodes 143. The base substrate 102 is disk-shaped. The plurality of sensor electrodes 143 are provided on the base substrate 102. The method includes a step of holding the edge ring ER, which has a conductive film F formed on at least a part of its surface, on the stage ST. The method includes a step of transporting a measuring device 100 to a region surrounded by an edge ring ER on a stage ST. The method includes a step of obtaining, by the measuring device 100 transported inside the region, a plurality of measurements representing a capacitance between the measuring device 100 and the edge ring ER having a conductive film F.

[0105] In addition, in one exemplary embodiment, a measurement system is provided that obtains a measurement value representing a capacitance between a measuring device 100 and an edge ring ER in a chamber S of a processing system 1. The measuring device 100 includes a base substrate 102, a plurality of sensor electrodes 143, and a processor 174. The base substrate 102 is disk-shaped. The plurality of sensor electrodes 143 are provided on the base substrate 102 so as to face outward in a radial direction. The processor 174 calculates a plurality of measurement values ​​representing a plurality of capacitances formed by the plurality of sensor electrodes 143, based on a plurality of digital values ​​output from the A / D converter 173. The processing system 1 includes a process module PM, transfer devices TU1 and TU2, and a control unit MC. The process module PM includes a chamber body 12 that provides the chamber S, and a stage ST that is provided in the chamber S and on which the measuring device 100 is placed. The transfer devices TU1 and TU2 transfer the measuring device 100 into the chamber S. The controller MC controls the operation of the transport devices TU1 and TU2. An edge ring ER having a conductive film F formed on at least a portion of its surface is held on the stage ST. The controller MC controls the transport devices TU1 and TU2 so that the measuring device 100 is transported to an area surrounded by the edge ring ER on the stage ST. The processor 174 calculates a plurality of measurement values ​​representing the capacitance between the plurality of sensor electrodes 143 of the measuring device 100 transported inside the area and the edge ring ER having the conductive film F.

[0106] In the measurement method and the measurement system of the above embodiment, the measurement device 100 acquires a plurality of measurement values ​​representing capacitances according to the distance between the edge ring ER and the plurality of sensor electrodes 143 of the measurement device 100 transported to the area surrounded by the edge ring ER. For example, when the dielectric constant of the material forming the edge ring body ER1 is small, the capacitance between the sensor electrode 143 and the edge ring body ER1 is likely to be a low value. In this case, the change in capacitance caused by the change in distance is also small. In the measurement method and the measurement system of the above embodiment, when the measurement values ​​are acquired, the surface of the edge ring body ER1 has a conductive film F. Since the plurality of sensor electrodes 143 and the conductive film F of the edge ring ER face each other, the capacitance measured by the measurement device 100 is the capacitance between the sensor electrode 143 and the conductive film F. Since both the sensor electrode 143 and the conductive film F are conductors with large dielectric constants, the measurement value by the measurement device 100 is large. Therefore, the capacitance having a magnitude according to the distance between the sensor electrode 143 and the edge ring ER is appropriately acquired.

[0107] In one exemplary embodiment, the edge ring body ER1 is made of an insulator such as quartz. As described above, even if the edge ring body ER1 is made of an insulator, a high capacitance is obtained by forming a conductive film F on the surface of the edge ring body ER1.

[0108] In one exemplary embodiment, the conductive film F is a carbon-based film containing carbon atoms. In this case, the conductive film can be easily removed by plasma etching or the like after the capacitance measurement is completed.

[0109] In one exemplary embodiment, the step of holding the edge ring ER on the stage ST includes a step of placing the edge ring body ER1 on the stage ST. The step of holding the edge ring ER on the stage ST also includes a step of forming a conductive film F on the surface of the edge ring body ER1 placed on the stage ST. Since the conductive film F can be formed on the edge ring body ER1 on the stage ST, it is not necessary to prepare the edge ring ER on which the conductive film F is formed in advance.

[0110] In one exemplary embodiment, the step of forming the conductive film F may form the conductive film F by CVD. In this case, the CVD may be plasma CVD. For example, the conductive film F may be formed to have a uniform thickness in the circumferential direction of the edge ring body ER1.

[0111] In one exemplary embodiment, the step of forming the conductive film F uses plasma of a gas containing a hydrocarbon gas, a hydrofluorocarbon gas, a fluorocarbon gas, or a combination thereof to form the conductive film F. In this case, the conductive film F can be formed with stable quality.

[0112] In one exemplary embodiment, the method includes a step of placing a protective substrate W1 in a region surrounded by the edge ring body ER1 on the stage ST (in one example, the electrostatic chuck ESC) before the step of forming the conductive film F. Also, the method further includes a step of removing the protective substrate W1 from the region surrounded by the edge ring ER on the stage ST after the step of forming the conductive film F. Since the conductive film is formed after the protective substrate W1 is transported, the formation of a conductive film on the upper surface of the electrostatic chuck ESC is suppressed.

[0113] In one exemplary embodiment, after the step of obtaining the multiple measurements, the method may further include a step of removing the conductive film F by a plasma containing oxygen atoms. By removing the conductive film F, the edge ring body ER1 can be used as usual.

[0114] In one exemplary embodiment, the conductive film F is formed at least on a portion of the edge ring body ER1 that faces the multiple sensor electrodes 143 of the measuring device 100. This configuration ensures that the conductive film F and the sensor electrodes 143 face each other when measuring the capacitance.

[0115] In one exemplary embodiment, after the step of acquiring the plurality of measured values, a step of adjusting the transfer positions of the transfer devices TU1 and TU2 based on the plurality of measured values ​​is included. For example, by calibrating the transfer position data, the workpiece W can be transferred to the center position of the electrostatic chuck ESC with high accuracy.

[0116] In one exemplary embodiment, the measuring device 100 includes a high-frequency oscillator 171, a plurality of C / V conversion circuits 172, an A / D converter 173, and a processor 174. The base substrate 102 is disk-shaped. The plurality of sensor electrodes 143 are provided on the base substrate 102. The high-frequency oscillator 171 is provided to provide a high-frequency signal to the plurality of sensor electrodes 143. The plurality of C / V conversion circuits 172 generate a plurality of voltage signals corresponding to a plurality of capacitances formed by the plurality of sensor electrodes 143, respectively. The A / D converter 173 converts the plurality of voltage signals output from the plurality of C / V conversion circuits 172, respectively, into a plurality of digital values. The processor 174 calculates a plurality of measurement values ​​representing a plurality of capacitances formed by the plurality of sensor electrodes 143, respectively, based on the plurality of digital values ​​output from the A / D converter 173. In this configuration, the measurement value indicating the capacitance can be easily obtained by the measuring device 100 alone.

[0117] Although exemplary embodiments have been described above, various omissions, substitutions, and modifications may be made without being limited to the above-described exemplary embodiments.

[0118] For example, the step of holding the edge ring ER on the stage ST may involve forming a conductive film F on the surface of the edge ring main body ER1 on the stage ST, or the edge ring ER on which the conductive film F has been formed in advance may be transported onto the stage ST. When the conductive film F is formed in advance on the surface of the edge ring main body ER1, for example, the conductive film F may be formed only on the inner circumferential surface P2a of the edge ring main body ER1. Alternatively, the conductive film F may be formed only on the inner circumferential surface P2a and the upper surface P2b of the edge ring main body ER1.

[0119] Also, for example, a conductive member may be embedded in a ring shape along the circumferential direction inside edge ring body ER1. When such an edge ring is used, measuring device 100 may measure the capacitance between the conductive member embedded in the edge ring and sensor electrode 143. In this case, even if no conductive film is formed on the surface of the edge ring, the measurement value by measuring device 100 may be large.

[0120] 11, the position adjustment is performed immediately when it is determined that the position adjustment is necessary as a result of the measurement by the measuring device 100, but the position adjustment may be a later process. For example, after the measurement by the measuring device 100, the conductive film may be removed before the position adjustment is performed. In this case, the position adjustment of the edge ring main body from which the conductive film has been removed is performed.

[0121] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0122] 1... processing system, 12... chamber body, 100... measuring instrument, 102... base substrate, 143... sensor electrode, 171... high frequency oscillator, 172... C / V conversion circuit, 173... A / D converter, 174... processor (arithmetic device), MC... control unit, PM... process module, S... chamber, ST... stage, TU1, TU2... transfer device.

Claims

1. 1. A method of obtaining a measurement representative of a capacitance between a measurement device and an edge ring in a chamber of a processing system, the method comprising: The processing system includes: a process module having a chamber body that provides the chamber and a stage that is provided in the chamber and on which the measuring device is placed; a transport device that transports the measuring device into the chamber; A control unit for controlling an operation of the conveying device, The measuring instrument is A disk-shaped base substrate; a plurality of sensor electrodes provided on the base substrate so as to face outward in a radial direction; The method comprises: holding the edge ring on the stage; transporting the measuring device to a region on the stage that is surrounded by the edge ring; and obtaining, with the measuring device brought inside the region, a plurality of measurements representative of capacitance between the plurality of sensor electrodes and the edge ring having a conductive film; A measurement method in which the edge ring held on the stage has an edge ring body and a conductive film having a composition different from that of the edge ring body and formed on at least a portion of the surface of the edge ring body.

2. The method according to claim 1 , wherein the measuring device includes a circuit board that calculates the plurality of measured values ​​representing the capacitances formed by the plurality of sensor electrodes, respectively.

3. The measuring method according to claim 1 , wherein the edge ring body is made of an insulating material.

4. The measurement method according to any one of claims 1 to 3, wherein the conductive film contains carbon atoms.

5. A measurement method described in any one of claims 1 to 4, wherein the process of holding the edge ring on the stage includes a process of placing the edge ring main body on the stage and a process of forming the conductive film on the surface of the edge ring main body placed on the stage.

6. The measuring method according to claim 5 , wherein the step of forming the conductive film forms the conductive film by CVD.

7. The measurement method according to claim 6 , wherein the CVD is plasma CVD.

8. The measuring method according to claim 7 , wherein the step of forming the conductive film comprises forming the conductive film by plasma of a gas containing a hydrocarbon gas, a hydrofluorocarbon gas, a fluorocarbon gas, or a combination thereof.

9. a step of placing a coating member on the stage in the region surrounded by the edge ring body before the step of forming the conductive film; The measurement method according to claim 7 , further comprising the step of removing the coating member from the region surrounded by the edge ring on the stage after the step of forming the conductive film.

10. The measurement method according to any one of claims 7 to 9, further comprising the step of removing the conductive film by plasma containing oxygen atoms after the step of obtaining the plurality of measured values.

11. The measurement method according to any one of claims 1 to 10, wherein the conductive film is formed at least on a portion of the edge ring body that faces the multiple sensor electrodes of the measuring device.

12. The measurement method according to any one of claims 1 to 11, further comprising, after the step of obtaining the plurality of measurement values, a step of adjusting a transport position in the transport device based on the plurality of measurement values.

13. The measuring instrument is a high frequency oscillator arranged to apply a high frequency signal to the plurality of sensor electrodes; a plurality of C / V conversion circuits for generating a plurality of voltage signals corresponding to a plurality of electrostatic capacitances formed by the plurality of sensor electrodes; an A / D converter that converts the voltage signals output from the C / V conversion circuits into digital values; and a calculation device that calculates a plurality of measurement values ​​representing the plurality of capacitances formed by the plurality of sensor electrodes, respectively, based on the plurality of digital values ​​output from the A / D converter. The measurement method according to any one of claims 1 to 12, further comprising:

14. 1. A measurement system for obtaining measurements indicative of capacitance between a measurement device and an edge ring within a chamber of a processing system, the measurement system comprising: A disk-shaped base substrate; A plurality of sensor electrodes are provided on the base substrate so as to face outward in a radial direction; a calculation device that calculates a plurality of measurement values ​​representing a plurality of capacitances formed by the plurality of sensor electrodes, a process module having a chamber body that provides a chamber and a stage that is provided in the chamber and on which the measuring device is placed; a transport device that transports the measuring device into the chamber; A control unit that controls the operation of the transport device, The edge ring is held on the stage, the control unit controls the transport device so that the measuring device is transported to a region on the stage that is surrounded by the edge ring; the computing device calculates the plurality of measurements representing capacitances between the plurality of sensor electrodes of the measuring device brought inside the region and the edge ring having a conductive film; A measurement system, wherein the edge ring has an edge ring body and the conductive film having a different composition than the edge ring body formed on at least a portion of a surface of the edge ring body.

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