Optoelectronics semiconductor parts transfer method

Abstract

The present invention relates to a method for transferring at least one optoelectronic semiconductor component from a first carrier to a second carrier, comprising the steps of: depositing a patternable material layer on the at least one optoelectronic semiconductor component arranged on the first carrier; patterning the at least one patternable material layer such that a partial region of the patterned material layer on a top surface of the optoelectronic semiconductor component is assigned to the optoelectronic semiconductor component; receiving the optoelectronic semiconductor component using the transfer unit, which comprises placing the transfer unit on a top surface of the partial region of the patterned material layer that is located opposite the optoelectronic semiconductor component; lifting the optoelectronic semiconductor component from the first carrier; arranging the optoelectronic semiconductor component in a first region of the second carrier, where at least one second region adjacent to the first region protrudes beyond the top surface of the optoelectronic semiconductor component; and fixing the optoelectronic semiconductor component to the second carrier.

Description

[Technical field]

[0001] This patent application claims priority to U.S. Patent Application No. 2021 / 013366 filed on April 1, 2021, the disclosure of which is incorporated herein by reference.

[0002] The present invention relates to a method for transferring at least one optoelectronic semiconductor component from a first carrier to a second carrier. In particular, the present invention relates to a method for creating an electrical and mechanical bond between an optoelectronic semiconductor component and a circuit board. Furthermore, the present invention relates in particular to an optoelectronic intermediate product which is produced during the method for transferring at least one optoelectronic semiconductor component from a first carrier to a second carrier and which is subsequently further processed. [Background technology]

[0003] Thermocompression bonding is a common method for electrically and mechanically connecting optoelectronic semiconductor components, for example, to a circuit board. In this case, a force is applied, for example, by means of a usually rigid plate, to the upper side of the optoelectronic semiconductor component, which faces away from the circuit board, so that the optoelectronic semiconductor component is pressed against the circuit board. Optionally, the optoelectronic semiconductor component can additionally be heated via the plate, so that the optoelectronic semiconductor component arranged on the circuit board is electrically and mechanically connected to the circuit board.

[0004] Such methods are known, for example, from US Pat. No. 5,399,321 and from US Pat. No. 5,399,332.

[0005] However, if the optoelectronic semiconductor component is transferred into a relatively deep cavity or is surrounded by protrusions or other features that protrude beyond the optoelectronic semiconductor component in a vertical direction, it may be difficult to apply the necessary pressure to the upper surface of the optoelectronic semiconductor component. In particular, it may be difficult to apply the necessary pressure to the upper surface of the optoelectronic semiconductor component using a large-area plate, since the large-area plate would collide with the protrusions or other features that surround the optoelectronic semiconductor component, and therefore may not be able to apply the necessary pressure to the upper surface of the optoelectronic semiconductor component to create a sufficient electrical and mechanical bond between the circuit board and the optoelectronic semiconductor component disposed thereon. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] DE 102021108397.4 [Patent Document 2] U.S. Patent No. 810060B2 [Non-patent literature]

[0007] [Non-Patent Document 1] Myung Jin Yim, Kyung Wook Paik, “Review of Electrically Conductive Adhesive Technologies for Electronic Packaging” Summary of the Invention [Problem to be solved by the invention]

[0008] There is therefore a need to provide a method for transferring at least one optoelectronic semiconductor component from a first carrier to a second carrier, in particular a method for creating an electrical and mechanical bond between the optoelectronic semiconductor component and a substrate, which addresses the above problems and allows the optoelectronic semiconductor component to be mounted reliably, simply and inexpensively even on surfaces with high topography (e.g. cavities). [Means for solving the problem]

[0009] The above mentioned needs are taken into account by a method having the features of independent claim 1 and by an optoelectronic intermediate product having the features of independent claim 16. Embodiments and developments of the invention are set out in the dependent claims.

[0010] The method according to the invention for transferring at least one optoelectronic semiconductor component from a first carrier to a second carrier comprises the steps of: - providing at least one optoelectronic semiconductor component on a first carrier; - depositing a layer of patternable material on at least one optoelectronic semiconductor component arranged on a first carrier; - patterning, in particular in the form of an etching process, of at least one patternable material layer in such a way that partial regions of the patterned material layer on the top side of the optoelectronic semiconductor component are assigned to the optoelectronic semiconductor component; - receiving the optoelectronic semiconductor component using a transfer unit (e.g. a punch), which comprises placing the transfer unit on an upper side of a partial region of the patterned material layer facing away from the optoelectronic semiconductor component; - lifting the optoelectronic semiconductor component from the first carrier; - arranging an optoelectronic semiconductor component in a first region of a second carrier, such that at least one second region adjacent to the first region of the second carrier protrudes beyond a top surface of the optoelectronic semiconductor component; - fixing the optoelectronic semiconductor component to the second carrier.

[0011] An essential aspect of the invention is that the surface topography on the second carrier can be compensated by the patterned material layer, so that sufficient pressure can be applied to the optoelectronic semiconductor component during the fixing step. In particular, the sum of the thicknesses of the material layer and the semiconductor component can be selected such that this sum is equal to or even greater than the height of the second region. This allows for improved mechanical and electrical coupling of the optoelectronic semiconductor component with the second carrier, even if the optoelectronic semiconductor component is arranged in a cavity or is surrounded by other high projections or features. Thus, the patterned material layer can compensate for height differences between the optoelectronic semiconductor component and the structure surrounding it, by virtue of the upper surface of the patterned material layer protruding beyond the surrounding structure. This allows for a simple and reliable application of the desired pressure to the patterned material layer or to the optoelectronic semiconductor component.

[0012] The patterned material layer can also planarize or smooth the emission structures on the top surface of the optoelectronic semiconductor component, thereby reducing damage or erosion of the top surface during the steps of lifting, placing and fixing the optoelectronic semiconductor component. This is especially true when the patterned material layer has a lower hardness than the individual layers of the optoelectronic semiconductor component, or when the patterned material has a lower hardness than at least the emission structures on the top surface of the optoelectronic semiconductor component.

[0013] In some embodiments, after the optoelectronic semiconductor component is placed in the first region, the top surface of the patterned material layer of the partial region protrudes beyond at least one second region. Thus, the top surface of the patterned material layer can protrude beyond the structure surrounding the optoelectronic semiconductor component. This allows easy access to the top surface, and allows easy application of force to the top surface of the patterned material layer, for example, using a substantially rigid and large-area plate.

[0014] In some embodiments, the first region forms the bottom surface of the cavity, and the at least one second region forms the edge surface forming the cavity. Thus, at least one optoelectronic semiconductor component can be arranged in the cavity in the first region, with the top surface of the at least one optoelectronic semiconductor component being arranged in the cavity and not protruding beyond it when the optoelectronic semiconductor component is arranged in the cavity. In other words, the cavity or the optoelectronic semiconductor component can be formed and arranged in the cavity such that the height of the optoelectronic semiconductor component is smaller than the vertical extent of the cavity. In particular, the top surface of the optoelectronic semiconductor component can be located below the edge surface forming the cavity. For example, the height of the optoelectronic semiconductor component can correspond to at most 1 / 2 or at most 3 / 4 of the vertical extent of the cavity. The cavity can be reflective, for example. The optoelectronic semiconductor component can be surrounded by a cavity or hollow structure, the side walls of which can be reflective. This allows, on the one hand, improved light guidance with a high light output from the optoelectronic semiconductor component to be achieved, and, on the other hand, crosstalk between multiple optoelectronic semiconductor components is prevented or at least significantly reduced.

[0015] However, the second region may also be formed by an upper surface of a protrusion or by an upper surface of another component arranged on the circuit board. Without the patterned material layer on the upper surface of the optoelectronic semiconductor component, the second region or the upper surface of the protrusion or another component may correspondingly collide with a substantially rigid plate that applies a force to the upper surface of the patterned material layer. This is however prevented by the patterned material on the upper surface of the optoelectronic semiconductor component.

[0016] In some embodiments, the step of fixing the optoelectronic semiconductor component comprises pressing the optoelectronic semiconductor component against the second carrier. The step of fixing the optoelectronic semiconductor component optionally further comprises heating the optoelectronic semiconductor component. In particular, the step of fixing the optoelectronic semiconductor component can be performed according to some steps of a thermocompression bonding (TCB) process accordingly.

[0017] In some embodiments, the step of fixing the optoelectronic semiconductor component comprises loading a solder system onto the semiconductor component and / or the second carrier, and subsequently soldering.

[0018] In some embodiments, the step of fixing the optoelectronic semiconductor component is carried out with a substantially rigid plate. The plate may then be formed from layers with different hardness. In particular, the layer of the plate facing the optoelectronic semiconductor component can be designed to be softer than the other layers of the plate. The layer of the plate facing the optoelectronic semiconductor component can also be made softer than the top surface of the patterned material layer. For example, at least one of the layers may be formed by a foil, in particular a soft and optionally temporarily mounted foil. Thereby, for example, damage or erosion of the patterned material layer during the step of fixing the optoelectronic semiconductor component can be reduced.

[0019] In some embodiments, the second carrier is formed by a circuit board or a backplane. In particular, the second carrier may be formed by a multi-layer ceramic substrate or a silicon wafer. In some embodiments, a substrate carrying electrical connections may be formed. In particular, the second carrier may include thin film transistors.

[0020] The first carrier may be formed, for example, by a wafer or a growth substrate. At least one optoelectronic semiconductor component may be grown, for example, on the first carrier. In particular, a plurality of optoelectronic semiconductor components may be grown on the first carrier and may be arranged on the first carrier with a spacing of 2 μm to 3 μm between each other.

[0021] In some embodiments, the first region comprises a contact pad, and the optoelectronic semiconductor component is placed on the contact pad. A conductive or non-conductive adhesive (isotropic or anisotropic) can be applied to the surface of the contact pad. Alternatively, a direct bond, in particular a metal-metal bond, can be performed between the contact pad and the optoelectronic semiconductor component without adhesive. It is also conceivable that solder is placed on the contact pad, and that the step of fixing the optoelectronic semiconductor component comprises a soldering process.

[0022] In some embodiments, the method comprises a further step in the form of removing at least a part of the partial area of ​​the patterned material layer. Thus, the patterned material layer or at least a part of the patterned material layer can be applied to the optoelectronic semiconductor component in the form of a sacrificial layer and can be at least partially removed again after the step of fixing the optoelectronic semiconductor component. The step of removing at least a part of the partial area of ​​the patterned material can be performed using a solvent, ozonated water, a plasma treatment and / or using an ashing process.

[0023] In some embodiments, the step of patterning at least one patternable material layer comprises applying a photo-patternable lacquer to the patternable material layer, and subsequently patterning the photo-patternable lacquer and the patternable material layer, so that a partial area of ​​the patterned material layer on the upper surface of the optoelectronic semiconductor component is assigned to the optoelectronic semiconductor component.The photo-patternable lacquer can be removed again before the step of accommodating the optoelectronic semiconductor component using a transfer unit, or can remain on the patternable material layer.

[0024] In some embodiments, the patternable material layer is formed by a sacrificial layer, which is only temporarily arranged on the optoelectronic semiconductor component and which is at least partially removed again after the step of fixing the optoelectronic semiconductor component.

[0025] In some embodiments, the patternable material layer itself comprises a photopatternable lacquer, in particular a photoresist. This may be the case in particular if the patternable material layer is only temporarily arranged on the optoelectronic semiconductor component and is at least partially removed again after the step of fixing the optoelectronic semiconductor component.

[0026] The patterned material layer can be configured, for example, to reduce damage or erosion of the top surface of the optoelectronic semiconductor component during lifting, positioning, and fixing steps, which may be particularly true when the patterned material layer has a lower hardness than the individual layers of the optoelectronic semiconductor component or when the patterned material layer has a lower hardness than the top surface of the optoelectronic semiconductor component.

[0027] The patternable material layer may be characterized, for example, by good temperature and / or pressure stability, so that the patternable material layer or the optoelectronic semiconductor component is not damaged, for example when fixing the optoelectronic semiconductor component to the second carrier under high pressure and / or high temperature.

[0028] In some embodiments, the patternable material layer comprises at least partly a transparent material, such as parylene or silicone, etc. In particular, at least a portion of the patterned material layer consisting of an at least partially transparent material may be permanently / permanently disposed on top of an optoelectronic semiconductor component.

[0029] In some embodiments, the patternable material layer comprises light converting and / or light scattering particles, which or other materials can be used for light conversion or light scattering, to achieve desired optical properties and desired luminescence properties, for example, of optoelectronic semiconductor components.

[0030] In some embodiments, the partial region of the patterned material layer surrounds the optoelectronic semiconductor component in the circumferential direction. The partial region of the patterned material layer is therefore arranged on the top surface of the optoelectronic semiconductor component and additionally surrounds the optoelectronic semiconductor component in the circumferential direction of the optoelectronic semiconductor component. In particular, at least the part of the patterned material layer surrounding the optoelectronic semiconductor component is permanently / permanently arranged on the optoelectronic semiconductor component and can comprise, for example, light-converting particles and / or light-scattering particles.

[0031] In some embodiments, the sub-regions of the patterned material layer include regions that are permanently / permanently disposed on the optoelectronic semiconductor component and regions that are only temporarily disposed on the optoelectronic semiconductor component.

[0032] In some embodiments, the step of depositing the layer of patternable material comprises a spin-on process, sputter coating, or spin coating, or a similar process suitable therefor.

[0033] In some embodiments, the patternable material layer has good thermal conductivity, thereby providing good thermal conduction from a plate that is placed on top of the patternable material layer or on top of a portion of the patterned material layer and is heated to the at least one optoelectronic semiconductor component.

[0034] In some embodiments, the at least one optoelectronic semiconductor component is formed by an optoelectronic light source, in particular an LED. The edge length of the optoelectronic semiconductor component or the optoelectronic light source can be, for example, less than 300 μm, in particular less than 150 μm. In the case of these spatial extents, the at least one optoelectronic semiconductor component or the optoelectronic light source is barely visible to the naked eye.

[0035] In some embodiments, the at least one optoelectronic semiconductor component is an LED. The LED can in particular be called a mini-LED, which is a small LED whose edge length is, for example, less than 200 μm, in particular less than 40 μm, in particular in the range of 200 μm to 10 μm. Others are in the range of 150 μm to 40 μm.

[0036] LEDs may be referred to as micro LEDs, μLEDs, or μLED chips, especially when the edge length is in the range of 70 μm to 10 μm. In some embodiments, the LEDs may have spatial dimensions of 90×150 μm, or spatial dimensions of 75×125 μm.

[0037] The mini-LED or μLED chip may be an unpackaged semiconductor chip in some embodiments. Unpackaged may mean that the chip does not have a housing, such as a die, around its semiconductor layers. In some embodiments, unpackaged may mean that the chip does not contain any organic materials. Thus, an unpackaged component does not contain organic compounds that contain carbon in covalent bonds.

[0038] In some embodiments, at least one optoelectronic semiconductor component is formed by a light source capable of emitting light of a specific color. In some embodiments, the optoelectronic semiconductor components may be formed to emit light of different colors, for example red, green, blue and yellow. However, at least one optoelectronic semiconductor component may also be formed by a sensor, in particular a light-sensitive sensor.

[0039] In some embodiments, the method described above can be used to simultaneously transfer multiple optoelectronic semiconductor components from a first carrier to a second carrier. In particular, the method described above can be used to simultaneously fix multiple optoelectronic semiconductor components to a second carrier using a rigid plate, for example in the form of a TCB process.

[0040] The optoelectronic intermediate product according to the invention comprises a circuit board having at least one first region and at least one second region adjacent to the first region, and at least one optoelectronic semiconductor component arranged in the at least one first region, whereby partial regions of a patterned material layer or sacrificial layer are arranged on a top side of the at least one optoelectronic semiconductor component, whereby the at least one second region protrudes beyond the top side of the optoelectronic semiconductor component and whereby a top side of the partial region of the patterned material layer or sacrificial layer, which is located away from the optoelectronic semiconductor component, protrudes beyond the at least one second region.

[0041] In particular, the optoelectronic intermediate product may be an intermediate product of the above-mentioned method, which is produced in particular during the method of transferring at least one optoelectronic semiconductor component from a first carrier to a second carrier and may subsequently be further processed.

[0042] In some embodiments, the optoelectronic intermediate product further includes a contact pad disposed between the first region and the optoelectronic semiconductor component.

[0043] In some embodiments, the patterned material layer or sacrificial layer comprises a photolacquer (Photolack), but the patterned material layer can also be formed of another, again easily removable material, thus forming a sacrificial layer that can be easily removed again after fastening the optoelectronic semiconductor component to the carrier.

[0044] In some embodiments, the patterned sacrificial layer comprises, at least in part, a transparent material, such as, for example, parylene or silicone.

[0045] In some embodiments, the patterned sacrificial layer comprises light converting and / or light scattering particles. [Brief description of the drawings]

[0046] [Figure 1] 1A and 1B are cross-sectional views of an optoelectronic semiconductor component and simplified views of an optoelectronic semiconductor component; [Diagram 2] 1 is a diagram of method steps of a method for transferring an optoelectronic semiconductor component from a first carrier to a second carrier. [Diagram 3] 4A-4D are method steps of another method for transferring an optoelectronic semiconductor component from a first carrier to a second carrier. [Figure 4A]1 is a diagram of method steps of a method for transferring optoelectronic semiconductor components from a first carrier to a second carrier according to some embodiments of the proposed principles. [Figure 4B] 1 is a diagram of method steps of a method for transferring optoelectronic semiconductor components from a first carrier to a second carrier according to some embodiments of the proposed principles. [Figure 5A] 1 is a cross-sectional view of an optoelectronic semiconductor component according to some aspects of the proposed principles. [Figure 5B] 1 is a cross-sectional view of an optoelectronic semiconductor component according to some aspects of the proposed principles. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0047] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0048] The following embodiments and examples show different aspects and their combinations according to the proposed principles. The embodiments and examples are not necessarily drawn to scale. Also, some parts may be shown enlarged or reduced in size to highlight individual aspects. It is understood that individual aspects and features of the embodiments and examples shown in the figures can be combined with each other without adversely affecting the principles according to the invention. Some aspects have regular structures or shapes. It should be noted that in practice there may be slight deviations from the ideal shapes, but this does not contradict the inventive concept.

[0049] Additionally, the individual figures, features, and aspects are not necessarily shown to exact scale, and the relationships between individual parts are not necessarily exact. Some aspects and features are emphasized by showing them enlarged. However, terms such as "top," "upper," "lower," "below," "greater," "lesser," and the like, in relation to parts, are shown precisely in the figures. Thus, such relationships between parts can be derived from the figures.

[0050] FIG. 1 shows a cross-section of an optoelectronic semiconductor component 1 or an LED chip, as well as a simplified diagram of an LED chip. The LED chip can be understood as a semiconductor layer stack with a layer 2 of n-type doped semiconductor material (n-layer) and a layer 3 of p-type doped semiconductor material (p-layer). During doping, the semiconductor crystal is precisely "contaminated" with foreign atoms, which changes the electrical conductivity of the semiconductor crystal. This leads to an excess of electrons in the n-layer and a deficiency of electrons (holes) in the p-layer. As soon as a corresponding current is applied to the semiconductor crystal in the forward direction, the excess electrons of the n-layer 2 move in the direction of the p-layer 3. The excess electrons collide with holes in the p-layer 3 in the so-called active zone 4. The transferred electrons and holes start to recombine there. This recombination generates energy, which radiates in the form of flashes of light (photons) and leaves the semiconductor crystal in the form of light waves. The active zone 4 can be formed as a layer, but also as a quantum well, as a multiple quantum well, in a quantum dot structure, or in another structure designed for radiative recombination.

[0051] A first electrical contact 5, which can simultaneously act as a mirror, is formed below the p-layer, to which a contact pad 6 is formed. A second electrical contact 7 is formed on the top surface of the semiconductor stack, so that electrical energy can be supplied to the LED chip via the two contacts. In addition, the semiconductor stack has a light-out structure 8 on its top surface, which can be used to increase the light-out efficiency of the LED chip. The second electrical contact 7 is formed according to the structure of the light-out structure 8 and therefore has a corresponding structure on its top surface. In addition, the semiconductor stack has a dielectric material 9 that encapsulates the semiconductor stack.

[0052] A simplified representation of such an optoelectronic semiconductor component 1 is shown on the right in the figure and this representation is used in the other figures.

[0053] 2 shows the method steps of a method for transferring an optoelectronic semiconductor component 1 from a first carrier 10 to a second carrier 11, in which in a first step the optoelectronic semiconductor component 1 is lifted from the first carrier 10 by means of a transfer unit (e.g. a punch) 12, and subsequently in a second step the optoelectronic semiconductor component 1 is placed in the second carrier 11 by means of the transfer unit or punch 12 on contact pads 13 provided for this purpose.

[0054] Then, in a next step, the optoelectronic semiconductor component 1 is fixed to the second carrier 11 using a TCB process by applying a certain pressure to the upper surface of the optoelectronic semiconductor component 1 using a plate 14, for example a silicone plate. Optionally, the optoelectronic semiconductor component 1 can also be heated using the plate 14, so that a sufficiently good mechanical and electrical bond is created between the optoelectronic semiconductor component 1 and the second carrier. The final product is shown below.

[0055] Figure 3 shows method steps of another method for transferring optoelectronic semiconductor components 1 from a first carrier 10 to a second carrier 11. In contrast to the method shown in Figure 1, however, the second carrier 11 has protrusions 15 or cavities 16 formed by protrusions 15. In a second step, by means of a transfer unit 12, the optoelectronic semiconductor components 1 are placed in the second carrier 11 in each one of the cavities 16 on the respective contact pads 13 provided therefor.

[0056] However, due to the protrusions 15 protruding beyond the optoelectronic semiconductor component 1, it is not possible to fasten the optoelectronic semiconductor component 1 to the second carrier 11 using the TCB process as shown in the previous figure. If pressure is to be applied to the upper side of the optoelectronic semiconductor component 1, the plate 14 shown in the previous figure hits the protrusions 15, so that the optoelectronic semiconductor component is neither pressed against the contact pads 13 nor heated via the plate 14. This leads to the fact that the bond between the optoelectronic semiconductor component 1 and the second carrier 11 or the contact pads 13 is created only by the step of positioning the optoelectronic semiconductor component 1 with the transfer unit 12. However, a sufficiently good mechanical and electrical bond between the optoelectronic semiconductor component 1 and the second carrier 11 cannot be achieved thereby.

[0057] 4A and 4B show method steps of a method for transferring optoelectronic semiconductor components 1 from a first carrier 10 to a second carrier 11 according to some embodiments of the proposed principle, whereby, according to Fig. 4A, in a first step, a patternable material layer 20 is applied on the top surface of a number of optoelectronic semiconductor components 1 arranged at a distance from one another on the first carrier 10. This material layer 20 is then patterned, for example by means of a photolithography process, so that only partial regions 17 of the patterned material layer on the top surface of the optoelectronic semiconductor components are assigned to each optoelectronic semiconductor component 1.

[0058] In a next step, a number of optoelectronic semiconductor components 1 are accommodated and transferred to the second carrier 11 using the transfer unit 12. In this case, by way of example, two optoelectronic semiconductor components 1 are accommodated and transferred to the second carrier 11. The optoelectronic semiconductor components 1 are arranged in the second carrier on the contact pads 13 provided therefor in the respective cavities 16. In this case, the height of the optoelectronic semiconductor components 1 is smaller than the protrusions 15 forming the cavities 16, so that the upper surface of the optoelectronic semiconductor components 1 is respectively inside the cavities. Compared to the upper surface of the protrusions 15, the upper surface of the optoelectronic semiconductor components 1 is offset downwards, so to speak, relative to the protrusions. In this case, the respective bottoms of the cavities 16 form a first region 18, and the upper surfaces of the protrusions 15 form respectively a second region 19. Correspondingly, the optoelectronic semiconductor components 1 or the contact pads 13 are arranged in the first region 18, and the second region 19 protrudes beyond the upper surface of the optoelectronic semiconductor components 1, respectively.

[0059] The partial regions 17 of the patterned material layer have a height such that the upper surface of the partial regions 17 lies above the upper surface of the protrusions 15 or above the second regions 19. The optoelectronic semiconductor component 1 is then fixed to the second carrier 11 by means of a TCB process, in that a defined pressure is applied by means of the plate 14 to the upper surface of the partial regions 17 of the patterned material layer. Optionally, the optoelectronic semiconductor component 1 can additionally be heated by means of the plate 14 via the partial regions 17 of the patterned material layer, so that a sufficiently good mechanical and electrical bond is created between the optoelectronic semiconductor component 1 and the second carrier.

[0060] As shown above in Fig. 4B, the intermediate product 21 produced comprises a second carrier 11, in particular in the form of a circuit board, and a second optoelectronic semiconductor component 1, which is arranged on the second carrier at the contact pad 13 or at the first region 18, respectively. A protrusion 15 is formed on the second carrier 11, which protrudes beyond the optoelectronic semiconductor component 1, so that an upper surface of the protrusion 15 or respectively a second region 19 protrudes beyond the upper surface of the optoelectronic semiconductor component 1. Partial regions 17 of a patterned material layer or sacrificial layer are respectively arranged on the upper surface of the optoelectronic semiconductor component 1, so that an upper surface of the partial region 17 of the patterned material layer or sacrificial layer, respectively, protrudes beyond the second region 19.

[0061] In a next step, partial regions 17 of the patterned material layer can be removed, as shown below in FIG. 4B, but partial regions can also remain in the at least partial optoelectronic semiconductor component 1 .

[0062] Such a case is shown, for example, in Figures 5A and 5B. The partial regions 17 of the patterned material layer are then configured to remain on the optoelectronic semiconductor component 1 after the step of fastening the optoelectronic semiconductor component 1 to the second carrier 11. The partial regions 17 of the patterned material layer can thus remain permanently on the optoelectronic semiconductor component 1. The partial regions 17 of the patterned material layer can have, in particular, light-shaping or light-scattering properties. This can be achieved on the one hand by the shape of the partial regions 17 of the patterned material layer (here exemplarily a trapezoidal shape) or by light-scattering particles in the material layer.

[0063] As shown in Fig. 5B, the partial regions 17 of the patterned material layer may be configured in a circumferential direction to surround the optoelectronic semiconductor component 1. This may be particularly advantageous if the material layer comprises light-converting particles, since light that is emitted laterally from the optoelectronic semiconductor component must also pass through the material layer and can thereby be converted. [Explanation of symbols]

[0064] 1. Optoelectronic semiconductor components 2 n-layer 3 p layer 4. Active Zone 5 First Electrical Contact 6 Contact Pads 7 Second Electrical Contact 8 Light output structure 9. Dielectric Materials 10 First Career 11 Second Career 12 Transfer Unit 13 Contact Pad 14 Plate 15 Convex 16 Cavity 17 Partial area 18 First Area 19 The second area 20 material layers 21 Optoelectronic intermediates

Claims

1. A method for transferring at least one optoelectronic semiconductor component (1) from a first carrier (10) to a second carrier, comprising the steps of: Providing an optoelectronic semiconductor component (1) on a first carrier (10); - depositing a patternable material layer (20) on said at least one optoelectronic semiconductor component (1) arranged on said first carrier (10); patterning the at least one patternable material layer (20) such that partial regions (17) of the patterned material layer on the top surface of the optoelectronic semiconductor component (1) are assigned to the optoelectronic semiconductor component (1); - receiving the optoelectronic semiconductor component (1) using a transfer unit (12), which comprises placing the transfer unit (12) on an upper side of the partial region (17) of the patterned material layer facing away from the optoelectronic semiconductor component (1); Lifting the optoelectronic semiconductor component (1) from the first carrier (10); - arranging the optoelectronic semiconductor component (1) in a first region (18) of a second carrier (11), in which at least one second region (19) adjacent to the first region (18) of the second carrier (11) protrudes beyond the top surface of the optoelectronic semiconductor component (1); and fixing the optoelectronic semiconductor component (1) to the second carrier (11), 4. The method of claim 3, wherein after the optoelectronic semiconductor component (1) has been arranged in the first region (18), the upper surface of the partial region (17) of the patterned material layer protrudes beyond the at least one second region (19).

2. 2. The method of claim 1, wherein the first region (18) forms a bottom surface of a cavity (16) and the at least one second region (19) forms an edge surface forming the cavity (16).

3. 2. The method according to claim 1, wherein the step of fixing the optoelectronic semiconductor component (1) comprises pressing the optoelectronic semiconductor component (1) onto the second carrier (11) and, optionally, heating the optoelectronic semiconductor component (1).

4. 2. The method according to claim 1, wherein the step of fixing the optoelectronic semiconductor component (1) is carried out using a substantially rigid plate (14), the plate (14) being optionally formed from a number of layers with different hardness.

5. 2. The method according to claim 1, wherein the second carrier (11) is formed by a circuit board.

6. The method of claim 1, wherein the first carrier (10) is formed by a wafer or a growth substrate.

7. 2. The method of claim 1, wherein the first region (18) comprises a contact pad (13), and the optoelectronic semiconductor component (1) is arranged on the contact pad (13).

8. The method of claim 1 , further comprising removing at least a portion of the sub-region (17) of the patterned material layer.

9. The method of claim 1 , wherein the patternable material layer (20) comprises a photolacquer.

10. The method of claim 1 , wherein the patternable material layer (20) comprises, at least in part, a transparent material.

11. The method of claim 1 , wherein the patternable material layer (20) comprises light converting and / or light scattering particles.

12. 2. The method according to claim 1, wherein the partial regions (17) of the patterned material layer surround the optoelectronic semiconductor component (1) in a circumferential direction.

13. The method of claim 1 , wherein the step of depositing the layer of patternable material (20) comprises a spin-on process, sputter coating, or spin coating.

14. 2. The method according to claim 1, wherein by means of said method a number of optoelectronic semiconductor components (1) are transferred simultaneously from said first carrier (10) to said second carrier (11).

15. An optoelectronic intermediate (21), A circuit board (11) having at least one first region (18) and at least one second region (19) adjacent to the first region; at least one optoelectronic semiconductor component (1) arranged in said at least one first region (18); a partial region (17) of a patterned sacrificial layer arranged on a top surface of the at least one optoelectronic semiconductor component (1), said at least one second region (19) protruding beyond said top surface of said optoelectronic semiconductor component (1); An optoelectronic intermediate product, in which a top surface of the partial region (17) of the patterned sacrificial layer facing away from the optoelectronic semiconductor component (1) protrudes beyond the at least one second region (19).

16. 16. Optoelectronic intermediate product according to claim 15, further comprising a contact pad (13) arranged between the first region (18) and the optoelectronic semiconductor component (1).

17. 16. The optoelectronic intermediate of claim 15, wherein the patterned sacrificial layer comprises a photolacquer.

18. 16. The optoelectronic intermediate of claim 15, wherein the patterned sacrificial layer comprises, at least in part, a transparent material.

19. 16. The optoelectronic intermediate product of claim 15, wherein the patterned sacrificial layer comprises light converting and / or light scattering particles.

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