Semiconductor processing equipment and its gas supply means

Abstract

The present embodiment provides a semiconductor processing apparatus and its gas supply means, which includes an air supply block assembly and a connection assembly, both of which are made of corrosion-resistant materials, the air supply block assembly is hermetically connected to the top cover of a process chamber, a gas mixing chamber, a gas transport channel and a gas mixing channel are formed in the air supply block assembly, the gas transport channel has an air supply port connected to the gas mixing chamber, the gas transport channel has an exhaust port connected to the process chamber, the gas mixing channel has a number of air supply ports, the number of air supply ports are all formed on the outer surface of the air supply block assembly, the gas mixing channel has an exhaust port connected to the gas mixing chamber, and a number of connection assemblies are all provided on the air supply block assembly, which are used to connect to the number of air supply ports of the gas mixing channel in a one-to-one correspondence and to connect to a number of process gas sources in a one-to-one correspondence, and each connection assembly is used to selectively introduce process gas into the gas mixing channel or stop introducing process gas. The embodiments of the present application can prevent reactant gases from corroding and forming contaminants, thereby improving wafer yield.

Description

[Technical field]

[0001] This application relates to the technical field of semiconductor processing, and more particularly to semiconductor process equipment and its gas supply means. [Background technology]

[0002] At present, the process of ammonia-hydrogen fluoride dry etching is as follows: after the wafer enters the process chamber, it is raised to the process position by driving the base, and dilution gas is introduced into the process chamber to control the pressure in the process chamber; in the process chamber, the pressure reaches the process pressure and the wafer temperature rises to the process temperature; then, reactive gas and dilution gas are pre-introduced into the process chamber to pre-adsorb (presoak) on the wafer surface; the reactive gas includes, for example, ammonia (NH3) and hydrogen fluoride (HF), which are mixed together to form ammonium fluoride (NH4F), which is a highly active reactant; then, the reactive gas and dilution gas are re-introduced into the process chamber; at this time, the reactive gas reacts with the silica on the wafer surface to generate solid by-products; finally, the wafer is heat-treated in an annealing chamber, after which the by-products thereon volatilize, thereby finally achieving the purpose of etching the wafer. During the actual process, parameters such as base temperature, process pressure, the ratio of ammonia (NH3) and hydrogen fluoride (HF) in the reaction gas, dilution gas flow rate, time interval, and temperature difference in the process chamber all affect the final etching uniformity and selectivity.

[0003] In the prior art, the reactive gas and the dilution gas are mixed in the mixing chamber through the mixing pipe structure, and then introduced into the process chamber through the air supply pipe. In the air supply process, the corrosive reactive gas (e.g., hydrogen fluoride) corrodes the pipe, so that the contaminants (e.g., iron (Fe)) caused by the corrosion of the pipe enter the process chamber and fall onto the wafer, which is difficult to remove, and the particle index on the wafer surface exceeds the standard, which greatly reduces the wafer yield. Summary of the Invention [Problem to be solved by the invention]

[0004] The present application provides a semiconductor process apparatus and an air supply means thereof that solves the technical problem of the prior art air supply means corroding and contaminating the process chamber, thereby reducing the yield rate of wafers, in response to the shortcomings of the prior art. [Means for solving the problem]

[0005] According to a first aspect, an embodiment of the present application provides an air supply means for a semiconductor processing apparatus, provided at a top of a process chamber of the semiconductor processing apparatus for transporting a process gas into the process chamber, the air supply means comprising: The air intake block assembly and the connection assembly are both made of a corrosion-resistant material; The air supply block assembly is hermetically connected to an upper cover of the process chamber, and a gas mixing chamber, a gas transport channel and a gas mixing channel are formed in the air supply block assembly, an air supply port of the gas transport channel is connected to the gas mixing chamber, an exhaust port of the gas transport channel is connected to the process chamber, the gas mixing channel has a plurality of air supply ports, and the plurality of air supply ports are all formed on an outer surface of the air supply block assembly, and an exhaust port of the gas mixing channel is connected to the gas mixing chamber; The multiple connection assemblies are all provided on the supply block assembly, and are used to communicate with the multiple supply ports of the gas mixing channel in a one-to-one correspondence and connect to multiple process gas supply sources in a one-to-one correspondence, and each connection assembly provides an air supply means for a semiconductor processing apparatus, which is used to selectively introduce or stop the introduction of process gas into the gas mixing channel.

[0006] In one embodiment of the present application, the process gas includes hydrogen fluoride gas, the corrosion resistant material used in the air supply block assembly includes aluminum, and the corrosion resistant material used in the connection assembly includes Hastelloy.

[0007] In one embodiment of the present application, the air supply block assembly includes a first air supply block, a second air supply block, and a third air supply block sealed in sequence, the first air supply block is sealed connected to a top cover of the process chamber, the gas transport channel is formed in the first air supply block and the second air supply block, the gas mixing chamber is formed between the second air supply block and the third air supply block, and the gas mixing channel is formed in the second air supply block and the third air supply block.

[0008] In one embodiment of the present application, the air supply means further includes a temperature control assembly, which is provided in the first air supply block, the second air supply block and the third air supply block, and is used to detect and control the temperatures of the first air supply block, the second air supply block and the third air supply block.

[0009] In one embodiment of the present application, the gas transport channel includes a first gas transport branch and a second gas transport branch, the first gas transport branch includes a first vertical channel and a first horizontal channel formed in the first gas supply block and communicating with each other, the first vertical channel extends in the axial direction of the process chamber, the first horizontal channel extends in the radial direction of the process chamber, an exhaust end of the first vertical channel communicates with the process chamber, an intake end of the first horizontal channel communicates with the second gas transport branch, the second gas transport branch includes two second horizontal channels formed in the second gas supply block and communicating with each other, the two second horizontal channels are both parallel to a radial cross section of the process chamber and form an included angle, the exhaust end of one of the second horizontal channels communicates with the intake end of the first horizontal channel, and the intake end of the other second horizontal channel communicates with the gas mixing chamber.

[0010] In one embodiment of the present application, a gas mixing groove is formed in at least one of two opposing sealing surfaces of the third air supply block and the second air supply block to form the gas mixing chamber.

[0011] In one embodiment of the present application, the gas mixing channel includes a first gas mixing branch, a connection branch, and a plurality of second gas mixing branch, the first gas mixing branch includes a third transverse channel and a fourth transverse channel formed in the third gas supply block and communicating with each other, the third transverse channel and the fourth transverse channel are both parallel to a radial cross section of the process chamber and form an included angle therebetween, an exhaust end of the third transverse channel is an exhaust port of the gas mixing channel and communicates with the gas mixing chamber, an intake end of the fourth transverse channel is located on a side surface of the third gas supply block, and the connection branch includes a sixth transverse channel and a sixth transverse channel formed in the third gas supply block. and a seventh transverse channel formed in the second air supply block, the sixth transverse channel is connected to the seventh transverse channel, and the exhaust ends of the sixth transverse channel are connected to the fourth transverse channel, at least one fifth transverse channel is formed in each of the second air supply block and the third air supply block, the fifth transverse channel is the second gas mixing branch path, and the supply ends of the fifth transverse channel are an intake port of the gas mixing channel, the exhaust ends of the fifth transverse channels formed in the third air supply block are both connected to the sixth transverse channel, and the exhaust ends of the fifth transverse channels formed in the second air supply block are both connected to the seventh transverse channel.

[0012] In one embodiment of the present application, the temperature control assembly includes a heating member and a first temperature measuring member, the heating member and the first temperature measuring member are all provided in the first air supply block, the second air supply block and the third air supply block, the first temperature measuring member is electrically connected to the heating member, and the first temperature measuring member is used to detect temperatures of the first air supply block, the second air supply block and the third air supply block and to control the heating power of the heating member according to the temperatures.

[0013] In one embodiment of the present application, the temperature control assembly further includes a second temperature measuring member, which is provided in the first air supply block, the second air supply block, and the third air supply block, and is used to detect and display temperatures of the first air supply block, the second air supply block, and the third air supply block.

[0014] In an embodiment of the present application, each of the connection assemblies includes a connection member and a valve, one end of the connection member is sealingly connected to an inlet of the gas mixing channel, and the other end of the connection member is sealingly connected to a valve, which is connected to the process gas supply source and is used to selectively communicate or cut off communication between the gas mixing channel and the process gas supply source.

[0015] In one embodiment of the present application, each of the connection assemblies further includes a pressing member and a sealing joint, and the pressing member includes two semi-annular sub-pressing members that are butted together to form a closed ring surrounding the outer periphery of the connection member and are connected to the air supply block assembly and used to press the connection member against the air supply block assembly, and the connection member is sealingly connected to the valve via the sealing joint.

[0016] According to a second aspect, an embodiment of the present application provides a semiconductor processing apparatus including a process chamber and a gas supply means according to the first aspect.

[0017] The beneficial technical effects of the technical solutions according to the embodiments of the present application are as follows:

[0018] The gas supply means of the semiconductor processing apparatus according to the embodiment of the present application includes a gas supply block assembly and a connection assembly made of a corrosion-resistant material, and the process gas supplied from a plurality of process gas supply sources enters the gas mixing channel in the gas supply block assembly through a plurality of connection assemblies, respectively, and then enters the process chamber through the gas transport channel after being mixed in the gas mixing chamber. In addition, the process gas always flows through the channel formed of the corrosion-resistant material, so that the contact points between the gas supply means and the reactive gas can be prevented from corrosion, and thus the gas supply means can be applied to processes that require the introduction of a corrosive reactive gas (e.g., hydrogen fluoride), such as the ammonia-hydrogen fluoride dry etching process, thereby improving the applicability and scope of application of the embodiment of the present application. Furthermore, since the contact points between the gas supply means and the reactive gas can be prevented from corrosion, the generation of contaminants caused by pipe corrosion can be avoided, and thus the particulate matter (Particle) index requirements on the wafer surface can be achieved, and the wafer yield is greatly improved.

[0019] Additional aspects and advantages of the present application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the present application.

[0020] The above and / or additional aspects and advantages of the present application will become more apparent and easier to understand by referring to the following detailed description of the embodiments, taken in conjunction with the accompanying drawings, in which: FIG. [Brief description of the drawings]

[0021] [Figure 1] FIG. 1 is a schematic longitudinal sectional view of an air supply means and a process chamber in cooperation with one embodiment of the present invention. [Diagram 2] FIG. 2 is a schematic lateral structural view of the cooperation of the gas means and the process chamber according to an embodiment of the present application. [Figure 3A] FIG. 3A is a schematic diagram of a front structure of a first air supply block according to an embodiment of the present application. [Figure 3B] FIG. 3B is a schematic diagram of the left side structure of the first air supply block according to the embodiment of the present application. [Figure 3C] FIG. 3C is a schematic vertical cross-sectional view of the first air supply block according to the embodiment of the present application. [Figure 3D] FIG. 3D is a schematic plan view of the first air supply block according to an embodiment of the present application. [Figure 4A] FIG. 4A is a schematic diagram of a front structure of a second air supply block according to an embodiment of the present application. [Figure 4B] FIG. 4B is a schematic diagram of the right side structure of the second air supply block according to the embodiment of the present application. [Figure 4C] FIG. 4C is a schematic diagram of the left side structure of the second air supply block according to the embodiment of the present application. [Figure 4D] FIG. 4D is a schematic horizontal cross-sectional view of a second air supply block according to an embodiment of the present application. [Figure 5A] FIG. 5A is a schematic diagram of a front structure of a third air supply block according to an embodiment of the present application. [Figure 5B] FIG. 5B is a schematic diagram of the left side structure of the third air supply block according to the embodiment of the present application. [Figure 5C] FIG. 5C is a schematic diagram of the right side structure of the third air supply block according to the embodiment of the present application. [Figure 5D] FIG. 5D is a schematic horizontal cross-sectional view of a third air supply block according to an embodiment of the present application. [Figure 6A] FIG. 6A is a schematic top view of a connection assembly according to an embodiment of the present application. [Figure 6B] FIG. 6B is a schematic longitudinal cross-sectional view of a connection assembly according to an embodiment of the present application. [Figure 6C] FIG. 6C is a schematic diagram of a three-dimensional structure of a pressing member according to an embodiment of the present application. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] The present application will be described in detail below. Examples of the present application are shown in the drawings, and the same or similar reference numerals throughout indicate the same or similar components, or components having the same or similar functions. In addition, if a detailed description of the prior art is not necessary to illustrate the features of the present application, the description will be omitted. The following embodiments described with reference to the drawings are illustrative and are only used to explain the present application, and cannot be construed as limiting the present application.

[0023] As will be understood by those skilled in the art, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which this application pertains. Furthermore, terms as defined in common dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in their ideal or full meaning unless otherwise defined herein.

[0024] In the prior art semiconductor processing equipment, the gas supply means generally includes a mixing pipe structure made of stainless steel, a gas mixing chamber, an intake pipe and an intake flange, where the mixing pipe structure is connected to the mixing chamber, and the mixing chamber is connected to the top cover of the process chamber through the intake pipe and the intake flange. In practical application, process gases (e.g., reactant gases and dilution gases) supplied from multiple process gas sources enter the mixing chamber through the mixing pipe structure to be mixed, and then are introduced into the process chamber through the intake pipe and the intake flange. Regarding the process, since it is necessary to introduce corrosive reactive gases such as hydrogen fluoride, the stainless steel pipes are corroded. In particular, since the chamber is always open in the upper cover pipes and the pipes are exposed to the atmosphere, the moisture adhering to the inner wall of the pipe in the upper cover part reinforces the corrosion of the stainless steel pipes by hydrogen fluoride. As a result, the inner wall of the pipes is corroded and turns black, the roughness of the inner wall of the pipes decreases, and the corrosion resistance against hydrogen fluoride further decreases. Corroded iron (Fe) from the pipes enters the process chamber and falls onto the wafers and is difficult to remove, and the particulate matter (Particle) on the wafer surface exceeds the standard, which causes a significant decrease in wafer yield.

[0025] The following provides a detailed description of the technical solution of the present application in specific embodiments and how the technical solution of the present application solves the above technical problems.

[0026] The embodiment of the present application provides an air supply means for a semiconductor processing device, which is installed at the top of a process chamber of a semiconductor processing device and is used to transport process gas into the process chamber. The structure of the air supply means is shown in FIG. 1 and FIG. 2, and includes an air supply block assembly 1 and a connection assembly 2. The air supply block assembly 1 and the connection assembly 2 are both made of corrosion-resistant materials. In practical applications, appropriate corrosion-resistant materials can be selected according to the type of process gas introduced. For example, for hydrogen fluoride gas, the corrosion-resistant material used for the air supply block assembly 1 may include aluminum. Aluminum fluoride (AlF3) generated after the reaction of aluminum material with hydrogen fluoride is very dense, so that the problem of hydrogen fluoride corrosion can be effectively solved. Furthermore, aluminum material is easy to process, has low processing cost and a short processing cycle. Therefore, using aluminum material to manufacture the air supply block assembly 1 can not only avoid the problem of hydrogen fluoride corroding the air supply means, but also greatly reduce the application and maintenance costs of the embodiment of the present application. The corrosion-resistant material used for the connection assembly 2 may include Hastelloy. Hastelloy not only realizes hydrogen fluoride corrosion resistance and can prevent contamination inside the process chamber 100, but also greatly improves the strength of the connection assembly 2 because both materials are made of Hastelloy, thereby greatly reducing the failure rate and extending the service life of the embodiment of the present application. Of course, in actual applications, other corrosion-resistant materials may be used for hydrogen fluoride gas, and aluminum, Hastelloy or other corrosion-resistant materials may be used for other corrosive gases, and it is sufficient that the contact positions between the gas supply means and the reactive gases can be corrosion-resistant, but the embodiment of the present invention is not particularly limited thereto.

[0027] The supply block assembly 1 is hermetically connected to the top cover 101 of the process chamber 100. A gas mixing chamber 11, a gas transport channel 12 and a gas mixing channel 13 are formed in the supply block assembly 1. The supply port of the gas transport channel 12 is connected to the gas mixing chamber 11, and the exhaust port of the gas transport channel 12 is connected to the process chamber 100. The gas mixing channel 13 has a plurality of supply ports, and the plurality of supply ports are all formed on the outer surface of the supply block assembly 1. The exhaust port of the gas mixing channel 13 is connected to the gas mixing chamber 11. A plurality of connection assemblies 2 are all provided on the supply block assembly 1. The plurality of connection assemblies 2 are used to communicate with the plurality of supply ports of the gas mixing channel 13 in a one-to-one correspondence and to connect to a plurality of process gas supply sources in a one-to-one correspondence, and each connection assembly 2 is used to selectively introduce process gas into the gas mixing channel 13 or stop the introduction of process gas.

[0028] As shown in Fig. 1 and Fig. 2, the semiconductor processing apparatus may be specifically used to perform an ammonia-hydrogen fluoride dry etching process, but the embodiments of the present application do not limit the specific process type to be performed, and those skilled in the art may adjust and install the apparatus according to the actual situation. The air supply block assembly 1 may adopt a three-dimensional structure made of a material resistant to hydrogen fluoride corrosion, and the air supply block assembly 1 may be hermetically connected to an upper cover 101 of a process chamber 100 via a sealing ring and a bolt, and the air supply block assembly 1 is used to mix a plurality of process gases (e.g., a reaction gas and a dilution gas) and supply the mixed process gas into the process chamber 100. A gas mixing chamber 11, a gas transport channel 12, and a gas mixing channel 13 may be formed in the air supply block assembly 1, and the gas transport channel 12 may be, for example, a hole formed in the air supply block assembly 1, and the gas transport channel 12 may have an air supply port connected to the gas mixing chamber 11 and an exhaust port connected to the process chamber 100. Specifically, the gas mixing chamber 11 may be a cavity formed in the supply block assembly 1, and is used to mix a plurality of process gases (e.g., reactive gas and diluent gas) and then transport them into the process chamber 100 through the gas transport channel 12. The gas mixing channel 13 may be a hole formed in the supply block assembly 1, and the plurality of inlets of the gas mixing channel 13 are all formed on the outer surface of the supply block assembly 1, while the exhaust port of the gas mixing channel 13 is connected to the gas mixing chamber 11 and is used to transport a plurality of process gases (e.g., reactive gas and diluent gas) into the gas mixing chamber 11. The plurality of connection assemblies 2 may all be manufactured from hydrogen fluoride corrosion-resistant materials, and the materials of the two may be the same or different.The multiple connection assemblies 2 are all provided on the air supply block assembly 1 and are respectively sealedly connected to multiple air supply ports of the gas mixing channel 13, and the multiple connection assemblies 2 are used to connect to multiple process gas supply sources respectively so as to supply multiple types of process gases (e.g., reaction gases and dilution gases) into the gas mixing chamber 11 via the gas mixing channel 13.

[0029] In the embodiment of the present application, an air inlet block assembly and a connection assembly made of a hydrogen fluoride corrosion-resistant material are used, and a plurality of process gases (e.g., reactive gas and dilution gas) supplied from a plurality of process gas supply sources enter the gas mixing channel in the air inlet block assembly through a plurality of connection assemblies, respectively, and then enter the process chamber through the gas transport channel after being mixed in the gas mixing chamber; and the process gas always flows through the channel formed of a corrosion-resistant material, so that any position where the air inlet means and the reactive gas come into contact can be prevented from corrosion, and thus the process can be applied to a process that requires the introduction of a corrosive reactive gas (e.g., hydrogen fluoride), such as an ammonia-hydrogen fluoride dry etching process, thereby improving the applicability and scope of the embodiment of the present application. Furthermore, any position where the air inlet means and the reactive gas come into contact can be prevented from corrosion, so that the generation of contaminants caused by pipe corrosion can be avoided, and thus the particulate matter (Particle) index requirement on the wafer surface can be achieved, and the wafer yield is greatly improved.

[0030] It should be noted that the embodiments of the present application do not limit the specific structure of the air intake block assembly 1. For example, the air intake block assembly 1 may be provided in a tubular structure. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art may adjust and install the air intake block assembly 1 according to the actual situation.

[0031] In an embodiment of the present application, as shown in Figures 1 and 2, the air supply block assembly 1 includes a first air supply block 3, a second air supply block 4 and a third air supply block 5 which are hermetically connected in sequence, the first air supply block 3 is hermetically connected to the top cover 101 of the process chamber 100, a gas transport channel 12 is formed in the first air supply block 3 and the second air supply block 4, a gas mixing chamber 11 is formed between the second air supply block 4 and the third air supply block 5, and a gas mixing channel 13 is formed in the second air supply block 4 and the third air supply block 5.

[0032] 1 and 2, the first gas supply block 3, the second gas supply block 4 and the third gas supply block 5 may be hermetically connected in sequence, and the first gas supply block 3 may be hermetically connected to the upper cover 101 of the process chamber 100, the gas transport channel 12 may be formed in the first gas supply block 3 and the second gas supply block 4, the gas mixing chamber 11 may be formed between the second gas supply block 4 and the third gas supply block 5, and the gas mixing channel 13 may be formed in the second gas supply block 4 and the third gas supply block 5. According to the above design, the embodiment of the present application is simple in design and processing, has good quality and control, and is low in cost, thereby greatly reducing the application and manufacturing costs of the embodiment of the present application.

[0033] It should be noted that the embodiment of the present application does not limit the number of air supply blocks included in the air supply block assembly 1, and for example, the air supply block assembly 1 may include three or less or three or more air supply blocks. In addition, the embodiment of the present application does not limit the specific positions of the gas mixing chamber 11, the gas transport channel 12, and the gas mixing channel 13, and for example, the gas mixing channel 13 may be formed only in the third air supply block 5. Therefore, the embodiment of the present application is not limited to these, and those skilled in the art may adjust and install them themselves according to the actual situation.

[0034] In the embodiment of the present application, as shown in Figures 1 and 2, the air supply means further includes a temperature control assembly 6, which is installed in the first air supply block 3, the second air supply block 4 and the third air supply block 5, and is used to detect and control the temperatures of the first air supply block 3, the second air supply block 4 and the third air supply block 5. Specifically, the first air supply block 3, the second air supply block 4 and the third air supply block 5 all adopt block-shaped structures made of aluminum material, and the gas mixing chamber 11, the gas transport channel 12 and the gas mixing channel 13 are all formed in the three air supply blocks, so that there is no need to customize the heating belt with a specific shape as in the prior art, and the temperature control assembly 6 can be installed inside each air supply block, which greatly saves the cost of processing and manufacturing, and further greatly improves the economy of the embodiment of the present application.

[0035] In one embodiment of the present application, as shown in Figures 1 to 4D, the gas transport channel 12 includes a first gas transport branch 121 and a second gas transport branch 122, the first gas transport branch 121 includes a first vertical channel 31 and a first horizontal channel 32 formed in the first gas supply block 3 and communicating with each other, the first vertical channel 31 extends in the axial direction of the process chamber 100 (e.g., the longitudinal direction of the first gas supply block 3 in Figure 3C), the first horizontal channel 32 extends in the radial direction of the process chamber 100 (e.g., a direction perpendicular to the longitudinal direction of the first gas supply block 3 in Figure 3C), and the exhaust of the first vertical channel 31 The exhaust end of the first horizontal channel 32 is connected to the process chamber 100, the supply end of the first horizontal channel 32 is connected to the second gas transport branch 122, the second gas transport branch 122 includes two second horizontal channels 41 formed in the second air supply block 4 and connected to each other, the two second horizontal channels 41 are both parallel to the radial cross section of the process chamber 100 (i.e., the radial cross section of the second air supply block 4 in Figure 4D) and form an included angle between them, the exhaust end of one of the second horizontal channels 41 is connected to the supply end of the first horizontal channel 32, and the supply end of the other second horizontal channel 41 is connected to the gas mixing chamber 11.

[0036] 1 to 4D, the first gas transport branch 121 is formed in the first gas supply block 3, and the second gas transport branch 122 is formed in the second gas supply block 4, so that the embodiment of the present application has a simple structure and is easy to process, thereby greatly reducing the application and manufacturing costs. The shape of the first gas supply block 3 may specifically adopt a rectangular parallelepiped structure, and a flange structure 30 is integrally formed at its bottom, and the first gas supply block 3 may be connected to the upper cover 101 of the process chamber 100 through the flange structure 30 at the bottom, and specifically, the sealing connection is made by using a fastener engaging with a sealing ring, but the embodiment of the present application does not limit the specific sealing connection method. The first vertical channel 31 may extend in the longitudinal direction of the first gas supply block 3, i.e., the first vertical channel 31 may extend in the axial direction of the process chamber 100 (e.g., the longitudinal direction of the first gas supply block 3 in FIG. 3C), while the first horizontal channel 32 may be located at the top of the first gas supply block 3, and the first horizontal channel 32 may extend in the radial direction of the process chamber 100 (e.g., in a direction perpendicular to the longitudinal direction of the first gas supply block 3 in FIG. 3C, e.g., horizontal direction) and communicate perpendicularly with the first vertical channel 31, and the first vertical channel 31 and the first horizontal channel 32 jointly constitute a first gas transport branch 121. The first horizontal channel 32 is used to communicate with the second gas transport branch 122 in the second gas supply block 4, and thus the second gas supply block 4 can be provided on one side of the first gas supply block 3. The above design not only greatly saves the top space of the process chamber 100 and greatly reduces the occupied space, but also makes the structural installation of the embodiment of the present application more reasonable and easy to layout.

[0037] In addition, the embodiment of the present application does not limit the first vertical channel 31 to extend vertically and the first horizontal channel 32 to extend horizontally, and a person skilled in the art may adjust and install them according to actual conditions.

[0038] As shown in Figs. 1 to 4D, the shape of the second air supply block 4 is specifically a rectangular parallelepiped structure, and the two second horizontal channels 41 extend inward from the front and left side surfaces of the second air supply block 4, respectively. That is, the two second horizontal channels 41 may both extend in the radial direction of the second air supply block 4, and the radial direction of the second air supply block 4 may be set parallel to the radial direction of the first air supply block 3, and the embodiment of the present application is not limited thereto. The two second horizontal channels 41 communicate with each other to form the second gas transport branch path 122. The front side surface of the second air supply block 4 (i.e., the side surface shown in Fig. 4A) is provided in close contact with the front side surface of the first air supply block 3 (i.e., the side surface shown in Fig. 3A), and thus one of the second horizontal channels 41 may communicate with the first horizontal channel 32, and the other second horizontal channel 41 may communicate with the central position of the gas mixing chamber 11. According to the above design, the third gas supply block 5 is provided on one side of the second gas supply block 4, which further saves the top space of the process chamber 100. In addition, a first annular sealing groove 33 is opened on the front side of the first gas supply block 3, the first sealing groove 33 is provided around the gas supply port of the first transverse channel 32, and a sealing ring may be provided in the first sealing groove 33, and the first gas supply block 3 is sealedly connected to the second gas supply block 4 through the first sealing groove 33 and the sealing ring, and further realizes a sealed connection between the first gas transport branch 121 and the second gas transport branch 122. Four first connection holes 34 are further provided in the front-rear direction of the first air supply block 3, and the four first connection holes 34 are provided around the first sealing groove 33, and the four first fasteners 35 are provided correspondingly in the four first connection holes 34 and connected to the four connection holes on the front side of the second air supply block 4, but the embodiment of the present application does not limit the specific number of the first connection holes 34 and the first fasteners 35, and those skilled in the art may adjust and install them according to the actual situation. The first sealing groove 33 and the four first connection holes 34 are all provided around the air supply port of the first horizontal channel 32, which not only simplifies the structure of the embodiment of the present application, but also greatly improves the sealing effect between the first gas transport branch 121 and the second gas transport branch 122.However, the embodiment of the present application does not limit the sealing method between the first air supply block 3 and the second air supply block 4, and those skilled in the art may adjust or install it themselves according to the actual situation.

[0039] In an embodiment of the present application, as shown in Figures 1 to 5D, a gas mixing groove 51 is opened in one side surface of the third air supply block 5 (facing the second air supply block 4 and functioning as a sealing surface), and the opening of the gas mixing groove 51 is sealed connected to the side surface of the second air supply block 4 (facing the third air supply block 5 and functioning as a sealing surface) to form a gas mixing chamber 11. However, the embodiments of the present invention are not limited to these, and in actual applications, a gas mixing groove may be opened on one side of the second air supply block 4 (facing the third air supply block 5 and functioning as a sealing surface), and the opening of the gas mixing groove may be sealed and connected to one side of the third air supply block 5 (facing the second air supply block 4 and functioning as a sealing surface) to form a gas mixing chamber 11; or correspondingly, a gas mixing groove may be opened on both one side of the third air supply block 5 (facing the second air supply block 4 and functioning as a sealing surface) and one side of the second air supply block 4 (facing the third air supply block 5 and functioning as a sealing surface), and these two gas mixing grooves are butted together to form the gas mixing chamber 11.

[0040] As shown in FIG. 1 to FIG. 5D, the shape of the third gas supply block 5 is specifically a rectangular parallelepiped structure, and a circular gas mixing groove 51 is opened on the right side of the third gas supply block 5 (i.e., the side shown in FIG. 5C), and the diameter of the gas mixing groove 51 may be set to 30 to 100 mm, and the embodiment of the present application is not limited thereto. The right side of the third gas supply block 5 is closely arranged with the left side of the second gas supply block 4, so that the gas mixing groove 51 and the left side of the second gas supply block 4 are engaged to form the gas mixing chamber 11. According to the above design, the gas mixing groove 51 is provided in the third gas supply block 5, and it is engaged with the side of the second gas supply block 4 to form the gas mixing chamber 11, so that the turbulence coefficient of the reaction gas and the dilution gas can be greatly improved, and the mixing uniformity of the process gas can be greatly improved, and the embodiment of the present application has a simple structure and greatly reduces the application and manufacturing costs. In addition, a ring-shaped second sealing groove 42 may be opened on the left side (i.e., the side shown in FIG. 4C) of the second air supply block 4, and a sealing ring may be provided in the second sealing groove 42. The second air supply block 4 is sealed and tightly fitted to the third air supply block 5 through the second sealing groove 42 and the sealing ring, thereby further realizing the sealing of the gas mixing chamber 11. Four second connecting holes 43 are further provided in the left and right directions of the second air supply block 4, and the four second connecting holes 43 are respectively provided adjacent to the four corners of the second air supply block 4. Four second fasteners 44 are respectively provided in the four second connecting holes 43 and connected to the connecting holes on the right side of the third air supply block 5, and are used to press the sealing ring in the second sealing groove 42. However, the embodiment of the present application does not limit the specific number and distribution manner of the second connecting holes 43 and the second fasteners 44, and those skilled in the art may adjust and install them according to the actual situation. The second connection holes 43 are located at the corners of the second air supply block 4, which not only simplifies the structure of the embodiment of the present application, but also greatly improves the sealing effect between the second air supply block 4 and the third air supply block 5. However, the embodiment of the present application does not limit the sealing method between the second air supply block 4 and the third air supply block 5, and those skilled in the art may make their own adjustments and installations according to actual conditions.

[0041] In the embodiment of the present application, as shown in FIG. 1 to FIG. 5D, the gas mixing channel 13 includes a first gas mixing branch 131, a connecting branch 133, and a plurality of second gas mixing branch 132, the first gas mixing branch 131 includes a third transverse channel 52 and a fourth transverse channel 53 formed in the third gas supply block 5 and communicating with each other, the third transverse channel 52 and the fourth transverse channel 53 are both parallel to the radial cross section of the process chamber 100 (i.e., the radial cross section of the third gas supply block 5 in FIG. 5D) and form an included angle therebetween, the exhaust end of the third transverse channel 52 is the exhaust port of the gas mixing channel 13 and communicates with the gas mixing chamber 11, the supply end of the fourth transverse channel 53 is located on the side of the third gas supply block 5, and the connecting branch 133 is the third gas supply block 5 and the third transverse channel 52 and the fourth transverse channel 53 are connected to each other. The block 5 includes a sixth horizontal channel 56 and a seventh horizontal channel 57 formed in the second air supply block 4, the sixth horizontal channel 56 is connected to the seventh horizontal channel 57, and the exhaust ends of the sixth horizontal channel 56 are connected to the fourth horizontal channel 53, and at least one fifth horizontal channel 55 is formed in each of the plurality of second air supply blocks 4 and the third air supply block 5, the fifth horizontal channel 55 is the second gas mixing branch path 132, and the supply end of the fifth horizontal channel 55 is an air supply port of the gas mixing channel 13, the exhaust ends of the fifth horizontal channels 55 formed in the third air supply block 5 are all connected to the sixth horizontal channel 56, and the exhaust ends of the fifth horizontal channels 55 formed in the second air supply block 4 are all connected to the seventh horizontal channel 57.

[0042] 1 to 5D, the gas mixing channel 13 may include one first gas mixing branch 131 and two second gas mixing branch 132, where the first gas mixing branch 131 is located in the third gas supply block 5, and the two second gas mixing branch 132 are formed in the third gas supply block 5 and the second gas supply block 4, respectively. Specifically, the first gas mixing branch 131 includes a third transverse channel 52 and a fourth transverse channel 53 formed in the third gas supply block 5, and the third transverse channel 52 and the fourth transverse channel 53 are both parallel to the radial cross section of the process chamber 100 (i.e., the radial cross section of the third gas supply block 5 in FIG. 5D) and form an included angle therebetween, and the third transverse channel 52 and the fourth transverse channel 53 communicate with each other. A sixth horizontal channel 56 is opened in the third air supply block 5, and the sixth horizontal channel 56 extends from the right side (i.e., the side shown in Figure 5C) to the left side of the third air supply block 5 until it communicates with the fourth horizontal channel 53; that is, the sixth horizontal channel 56 has one end parallel to the gas mixing chamber 11 and the other end vertically communicates with the fourth horizontal channel 53; a seventh horizontal channel 57 is opened in the second air supply block 4, and the seventh horizontal channel 57 extends from the left side (i.e., the side shown in Figure 4C) to the right side of the second air supply block 4; one end of the seventh horizontal channel 57 is coaxially connected to one end of the sixth horizontal channel 56, and the other end adopts a closed structure; the sixth horizontal channel 56 and the seventh horizontal channel 57 together constitute a connecting branch path 133. According to the above design, since the connecting branch path 133 is provided, not only does the structure of the embodiment of the present application become simple and easy to process and manufacture, but also the cost of processing and manufacturing is further reduced.

[0043] The second gas mixing branch passage 132 is the fifth horizontal channel 55 formed in the third air supply block 5, and another second gas mixing branch passage 132 is the fifth horizontal channel 55 formed in the second air supply block 4, and the fifth horizontal channel 55 and the sixth horizontal channel 56 formed in the third air supply block 5 communicate with each other, and the fifth horizontal channel 55 and the seventh horizontal channel 57 formed in the second air supply block 4 communicate with each other, that is, the two second gas mixing branch passages 132 are formed in the third air supply block 5 and the second air supply block 4, respectively, but the embodiment of the present application does not limit the number and distribution of the second gas mixing branch passages 132, and those skilled in the art may adjust or install them according to the actual situation. The multiple second gas mixing branch passages 132 are all connected to the first gas mixing branch passage 131 through the connection branch passage 133, but the embodiment of the present application is not limited thereto, and those skilled in the art may adjust or install them according to the actual situation. The second gas mixing branch passages 132 are a plurality of fifth horizontal channels 55 formed in the second gas supply block 4 and the third gas supply block 5, and the fifth horizontal channels 55 may be arranged in parallel with the fourth horizontal channel 53, and the fifth horizontal channels 55 are all arranged to communicate with the fourth horizontal channel 53. In practical application, the first gas mixing branch passage 131 can be used to introduce hydrogen fluoride gas, and the two second gas mixing branch passages 132 can be used to introduce ammonia gas and nitrogen gas, respectively, that is, the first gas mixing branch passage 131 and the second gas mixing branch passage 132 are used to introduce reaction gas and dilution gas, respectively, but the embodiment of the present application does not limit the specific number of the second gas mixing branch passages 132 and the specific type of process gas introduced into each gas mixing branch passage, and those skilled in the art may adjust and set them according to the actual situation. According to the above design, the air intake ports of the first gas mixing branch passage 131 and the multiple second gas mixing branch passages 132 are all located on the same side of the third air intake block 5 and the second air intake block 4, which not only significantly reduces the space occupied by the embodiment of the present application, but also makes the structural design of the present application rational and makes it easier to install, remove, and maintain.

[0044] In addition, a ring-shaped third sealing groove 45 may be opened on the left side surface (i.e., the side surface shown in FIG. 4C) of the second air supply block 4, and a sealing ring may be provided in the third sealing groove 45. The second air supply block 4 is sealed and tightly contacted with the third air supply block 5 through the second sealing groove 42 and the sealing ring, and further realizes sealing of the seventh horizontal channel 57 and the sixth horizontal channel 56. The second air supply block 4 is connected to the third air supply block 5 through four second fasteners 44, so that the second air supply block 4 and the third air supply block 5 engage with each other to press the sealing ring in the third sealing groove 45. Since the multiple second connection holes 43 are respectively located at the corners of the second air supply block 4, the embodiment of the present application does not need to provide a fastening structure in the third sealing groove 45 alone, which can further reduce the manufacturing cost and further simplify the structure of the embodiment of the present application.

[0045] It should be noted that the embodiment of the present application does not limit the specific positions of the second gas mixing branch passages 132, and for example, the second gas mixing branch passages 132 may all be formed in the third air supply block 5. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art may adjust and install them themselves according to the actual situation.

[0046] In an embodiment of the present application, as shown in Figures 1 to 5D, the temperature control assembly 6 includes a heating member 61 and a first temperature measurement member 62, the heating member 61 and the first temperature measurement member 62 are all provided in the first air supply block 3, the second air supply block 4 and the third air supply block 5, and the first temperature measurement member 62 is electrically connected to the heating member 61. The first temperature measurement member 62 is used to detect the temperatures of the first air supply block 3, the second air supply block 4 and the third air supply block 5, and to control the heating power of the heating member 61 according to the temperature.

[0047] As shown in Figs. 1 to 5D, the heating member 61 may include a plurality of heating bars, which may be respectively provided in the first air supply block 3, the second air supply block 4, and the third air supply block 5. However, the embodiment of the present application does not limit the number of heating bars included in the heating member 61, and those skilled in the art may adjust and provide them according to the actual situation. In a specific embodiment of the present application, two 100W heating bars are inserted into the first air supply block 3, and both of the two heating bars are provided parallel to the axial direction of the first air supply block 3, and then the two heating bars are fixed in the first air supply block 3 by two screw jacks. Because the second air supply block 4 and the third air supply block 5 have large volumes, four 100W heating bars are provided in each of them. The four heating bars of the second air supply block 4 may protrude from the right side surface (i.e., the side surface shown in FIG. 4B) of the second air supply block 4 and be fixed by a screw jack, and the four heating bars may be arranged adjacent to the four second connection holes 43, so that the heating efficiency of the second air supply block 4 is high and uniform, and the four heating bars of the third air supply block 5 may protrude from the left side surface (i.e., the side surface shown in FIG. 5B) of the third air supply block 5 and be fixed by a screw jack, and the four heating bars may be arranged adjacent to the four corners of the left side surface of the third air supply block 5, so that the heating efficiency of the third air supply block 5 is high and uniform. The first temperature measuring member 62 may include three temperature measuring sensors, and the three temperature measuring sensors are respectively arranged in the first air supply block 3, the second air supply block 4, and the third air supply block 5 and are used to detect the temperatures of the three. Furthermore, the first temperature measurement member 62 may be electrically connected to the heating member 61 provided in the corresponding air supply block; for example, the first temperature measurement member 62 provided in the first air supply block 3 is connected to the heating member 61; in this manner, the first temperature measurement member 62 can control the heating power of the heating member 61 according to the temperature of the first air supply block 3, thereby realizing control over the temperature of the first air supply block 3; the temperature control principle of the second air supply block 4 and the third air supply block 5 is the same as that of the first air supply block 3, and will not be described here.According to the above design, it is possible to realize the temperature control of the multiple air supply blocks respectively, thereby improving the temperature uniformity of the multiple air supply blocks.

[0048] In addition, the embodiment of the present application does not limit the specific connection method between the heating member 61 and the first temperature measuring member 62. For example, the heating member 61 and the first temperature measuring member 62 are both electrically connected to a one-chip computer of a semiconductor processing device, and the one-chip computer controls the temperatures of multiple air supply blocks simultaneously or individually. Therefore, the embodiment of the present application is not limited to this, and those skilled in the art may make their own adjustments and installations according to actual situations.

[0049] In the embodiment of the present application, as shown in FIG. 1 to FIG. 5D, the temperature control assembly 6 further includes a second temperature measuring member 63, which is provided in the first air supply block 3, the second air supply block 4, and the third air supply block 5, and is used to detect and display the temperatures of the first air supply block 3, the second air supply block 4, and the third air supply block 5. Specifically, the second temperature measuring member 63 further includes three temperature sensors, which are provided in the first air supply block 3, the second air supply block 4, and the third air supply block 5, respectively, and are used to detect the real-time temperatures of the multiple air supply blocks, respectively. According to the above design, since the second temperature measuring member 63 is provided, the temperatures of the multiple air supply blocks can be detected in real time, thereby avoiding the failure of the first temperature measuring member 62 to detect the temperatures of the multiple air supply blocks, and further improving the safety and stability of the embodiment of the present application. However, the embodiments of the present application do not limit the specific number of temperature sensors included in the second temperature measurement member 63, but rather it is sufficient that they are installed corresponding to the number of air supply blocks. Therefore, the embodiments of the present application are not limited to these, and those skilled in the art may make their own adjustments and installations according to the actual situation.

[0050] In the embodiment of the present application, as shown in Figures 2 and 6A to 6C, each connection assembly 2 includes a connection member 21 and a valve 22, one end of the connection member 21 is hermetically connected to the inlet of the gas mixing channel 13, and the other end of the connection member 21 is hermetically connected to the valve 22, which is connected to a process gas supply source and is used to selectively connect or disconnect the gas mixing channel 13 and the process gas supply source.

[0051] As shown in FIG. 2 and FIG. 6A to FIG. 6C, the connection member 21 may specifically adopt a tubular structure, and for hydrogen fluoride gas, the tubular structure may be made of, for example, Hastelloy material. One end of the connection member 21 is connected to the inlet of the gas mixing channel 13, that is, the connection members 21 of the multiple connection assemblies 2 are respectively hermetically connected to the inlets of the first gas mixing branch 131 and the multiple second gas mixing branches 132. For example, in the embodiment of the present application, three connection assemblies 2 are included, and the connection members 21 of the three connection assemblies 2 are respectively hermetically connected to the inlets of one first gas mixing branch 131 and two second gas mixing branches 132, but the embodiment of the present application is not limited thereto, and the specific number of the connection assemblies 2 may be installed corresponding to the number of the inlets of the gas mixing channel 13. The valve 22 may specifically use an air diaphragm valve made of Hastelloy material, but the embodiment of the present application does not limit the specific type of the valve 22. The valve 22 is provided on the connection member 21 and connected to the process gas source, and is used for selectively connecting or disconnecting the gas mixing channel 13 and the process gas source, thereby selectively supplying the process gas to the mixing channel 13. According to the above design, the connection member 21 and the valve 22 are both made of Hastelloy material, which not only prevents hydrogen fluoride corrosion and prevents contamination of the process chamber 100, but also greatly improves the strength of the connection assembly 2 because both of them are made of Hastelloy material, thereby greatly reducing the failure rate and extending the service life of the embodiment of the present application.

[0052] In the embodiment of the present application, as shown in FIG. 2 and FIG. 6A to FIG. 6C, each connection assembly 2 further includes a pressing member 23 and a sealing joint 24, and the pressing member 23 includes two semi-annular sub-pressing members 231, which are butted together to form a closed ring surrounding the outer periphery of the connection member 21 and are connected to the air supply block assembly 1 and used to press the connection member 21 to the air supply block assembly 1, and the connection member 21 is sealed and connected to the valve 22 via the sealing joint 24. Specifically, the pressing member 23 may be an annular structure composed of two semi-annular sub-pressing members 231, and the two sub-pressing members 231 are engaged to form a pressing groove 232. The two sub-pressing members 231 are located on both sides of the connection member 21, respectively, so that the boss at the bottom end of the connection member 21 is located in the pressing groove 232. Both of the two sub-pressing members 231 are provided with a number of through holes 233, which are respectively used to mount a number of bolts, which are connected to the supply block assembly 1 after passing through the number of through holes 233, and press the connection member 21 to the supply block assembly 1, thereby realizing a sealed connection between the connection member 21 and the supply port of the gas mixing channel 13. The sealing joint 24 may specifically be a vacuum coupling radial seal (VCR) joint, and is specifically provided between the connection member 21 and the valve 22, and is used to realize a sealed connection between the connection member 21 and the valve 22. According to the above design, the process gas does not need to contact the sealing joint 24, so that the sealed connection between the connection member 21 and the valve 22 is realized and the resistance to hydrogen fluoride corrosion is realized, thereby avoiding contamination into the process chamber 100 and greatly improving the sealing effect of the connection assembly 2.

[0053] Based on the same inventive concept, an embodiment of the present application provides a semiconductor processing apparatus, which includes a process chamber and a gas supply means according to each of the above embodiments.

[0054] By employing the embodiments of the present application, at least the following beneficial effects can be realized.

[0055] The gas supply means of the semiconductor processing apparatus according to the embodiment of the present application includes a gas supply block assembly and a connection assembly made of a corrosion-resistant material, and the process gas supplied from a plurality of process gas supply sources enters the gas mixing channel in the gas supply block assembly through a plurality of connection assemblies, respectively, and then enters the process chamber through the gas transport channel after being mixed in the gas mixing chamber. In addition, the process gas always flows through the channel formed of the corrosion-resistant material, so that the contact points between the gas supply means and the reactive gas can be prevented from corrosion, and thus the gas supply means can be applied to processes that require the introduction of a corrosive reactive gas (e.g., hydrogen fluoride), such as the ammonia-hydrogen fluoride dry etching process, thereby improving the applicability and scope of application of the embodiment of the present application. Furthermore, since the contact points between the gas supply means and the reactive gas can be prevented from corrosion, the generation of contaminants caused by pipe corrosion can be avoided, and thus the particulate matter (Particle) index requirements on the wafer surface can be achieved, and the wafer yield is greatly improved.

[0056] It can be understood that the above embodiments are merely exemplary embodiments adopted to explain the principles of the present invention, but the present invention is not limited thereto. Those skilled in the art can make various modifications and improvements without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the protection scope of the present invention.

[0057] In addition, in the description of this application, the orientations or positional relationships indicated by the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," etc. are orientations or positional relationships based on the drawings, and are intended to facilitate and simplify the description of the present invention, and should be understood as not limiting the present invention, since they do not indicate or imply that such means or elements have a specific orientation or are configured and operated in a specific orientation.

[0058] It should be understood that the terms "first" and "second" are used merely for descriptive purposes and do not denote or imply any relative importance. Thus, a feature qualified with "first" or "second" may explicitly or implicitly include one or more of that feature. In the present description, unless otherwise stated, "plurality" means two or more than two.

[0059] In the present description, unless otherwise clearly specified or limited, the terms "attached", "coupled" and "connected" should be understood in a broad sense, for example, they may be fixedly connected, detachably connected or integrally connected, may be directly connected or indirectly connected via an intermediate medium, or may be internal communication between two elements. Those skilled in the art can understand the specific meaning of the above terms in the present invention according to the specific circumstances.

[0060] In the description herein, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

[0061] The above are only some embodiments of the present application, and what should be described is that those skilled in the art can make some improvements and modifications without departing from the principles of the present application, and these improvements and modifications should also be regarded as within the protection scope of the present application.

Claims

1. 1. A gas supply means for a semiconductor processing apparatus, which is provided at a top of a process chamber of the semiconductor processing apparatus for transporting a process gas into the process chamber, comprising: The air intake block assembly and the connection assembly are both made of a corrosion-resistant material; The air supply block assembly is hermetically connected to an upper cover of the process chamber, and a gas mixing chamber, a gas transport channel and a gas mixing channel are formed in the air supply block assembly, an air supply port of the gas transport channel is connected to the gas mixing chamber, an exhaust port of the gas transport channel is connected to the process chamber, the gas mixing channel has a plurality of air supply ports, and the plurality of air supply ports are all formed on an outer surface of the air supply block assembly, and an exhaust port of the gas mixing channel is connected to the gas mixing chamber; The plurality of connection assemblies are all provided on the inlet block assembly, and are connected to the plurality of inlets of the gas mixing channel in a one-to-one correspondence, and are used to connect to a plurality of process gas supply sources in a one-to-one correspondence, and each of the connection assemblies is used to selectively introduce or stop the introduction of process gas into the gas mixing channel; the air supply block assembly includes a first air supply block, a second air supply block, and a third air supply block, which are hermetically connected in sequence, the first air supply block being hermetically connected to a top cover of the process chamber; 12. The gas supply means of a semiconductor processing apparatus, comprising: a gas supply block for supplying a gas from a first gas supply block to a second gas supply block; a gas mixing chamber for supplying a gas from a second gas supply block to a third gas supply block; and a gas mixing channel for supplying a gas from a second gas supply block to a third gas supply block.

2. 2. The air supply means of claim 1, wherein the process gas comprises hydrogen fluoride gas, the corrosion resistant material used in the air supply block assembly comprises aluminum, and the corrosion resistant material used in the connection assembly comprises Hastelloy.

3. 2. The air supply means of claim 1, further comprising a temperature control assembly, the temperature control assembly being provided within the first air supply block, the second air supply block and the third air supply block, and being used to detect and control temperatures of the first air supply block, the second air supply block and the third air supply block.

4. the gas transport channel includes a first gas transport branch and a second gas transport branch; the first gas transport branch includes a first vertical channel and a first horizontal channel formed in the first gas supply block and communicating with each other, the first vertical channel extending in an axial direction of the process chamber, the first horizontal channel extending in a radial direction of the process chamber, an exhaust end of the first vertical channel communicating with the process chamber, and an intake end of the first horizontal channel communicating with the second gas transport branch; 2. The gas supply means of claim 1, wherein the second gas transport branch includes two second transverse channels formed in the second gas supply block and communicating with each other, the two second transverse channels are both parallel to a radial cross section of the process chamber and form an included angle between them, the exhaust end of one of the second transverse channels communicating with the gas supply end of the first transverse channel, and the supply end of the other second transverse channel communicating with the gas mixing chamber.

5. 2. The air supply means according to claim 1, wherein a gas mixing groove is formed in at least one of two opposing sealing surfaces of said third air supply block and said second air supply block to form said gas mixing chamber.

6. the gas mixing channel includes a first gas mixing branch, a connection branch, and a plurality of second gas mixing branch, the first gas mixing branch includes a third transverse channel and a fourth transverse channel formed in the third gas supply block and communicating with each other, the third transverse channel and the fourth transverse channel are both parallel to a radial cross section of the process chamber and form an included angle therebetween, an exhaust end of the third transverse channel is an exhaust port of the gas mixing channel and communicates with the gas mixing chamber, and an intake end of the fourth transverse channel is located on a side surface of the third gas supply block; the connecting branch passage includes a sixth transverse channel formed in the third air supply block and a seventh transverse channel formed in the second air supply block, the sixth transverse channel communicates with the seventh transverse channel, and an exhaust end of the sixth transverse channel communicates with the fourth transverse channel; The air supply means of claim 1, characterized in that at least one fifth horizontal channel is formed in each of the second air supply block and the third air supply block, the fifth horizontal channel being the second gas mixing branch path, the air supply end of the fifth horizontal channel being an air supply port of the gas mixing channel, the exhaust ends of the fifth horizontal channels formed in the third air supply block both communicating with the sixth horizontal channel, and the exhaust ends of the fifth horizontal channels formed in the second air supply block both communicating with the seventh horizontal channel.

7. The air supply means of claim 3, characterized in that the temperature control assembly includes a heating member and a first temperature measuring member, the heating member and the first temperature measuring member are all provided in the first air supply block, the second air supply block and the third air supply block, the first temperature measuring member is electrically connected to the heating member, and the first temperature measuring member is used to detect the temperatures of the first air supply block, the second air supply block and the third air supply block and to control the heating power of the heating member according to the temperatures.

8. 8. The air supply means of claim 7, wherein the temperature control assembly further includes a second temperature measuring member provided in the first air supply block, the second air supply block and the third air supply block, and used to detect and indicate temperatures of the first air supply block, the second air supply block and the third air supply block.

9. A gas supply means for a semiconductor processing apparatus, provided at a top of a process chamber of the semiconductor processing apparatus for transporting a process gas into the process chamber, comprising: The air intake block assembly and the connection assembly are both made of a corrosion-resistant material; The air supply block assembly is hermetically connected to an upper cover of the process chamber, and a gas mixing chamber, a gas transport channel and a gas mixing channel are formed in the air supply block assembly, an air supply port of the gas transport channel is connected to the gas mixing chamber, an exhaust port of the gas transport channel is connected to the process chamber, the gas mixing channel has a plurality of air supply ports, and the plurality of air supply ports are all formed on an outer surface of the air supply block assembly, and an exhaust port of the gas mixing channel is connected to the gas mixing chamber; The plurality of connection assemblies are all provided on the inlet block assembly, and are connected to the plurality of inlets of the gas mixing channel in a one-to-one correspondence, and are used to connect to a plurality of process gas supply sources in a one-to-one correspondence, and each of the connection assemblies is used to selectively introduce or stop the introduction of process gas into the gas mixing channel; Each of the connection assemblies includes a connection member and a valve, one end of the connection member is sealedly connected to an inlet of the gas mixing channel, and the other end of the connection member is sealedly connected to a valve, the valve is connected to the process gas supply source, and is used for selectively connecting or disconnecting the gas mixing channel and the process gas supply source; each of the connection assemblies further includes a pressing member and a sealed joint, the pressing member includes two semi-annular sub-pressing members which are butted together to form a closed ring surrounding the outer periphery of the connection member, are connected to the air supply block assembly, and are used to press the connection member against the air supply block assembly, and the connection member is sealed connected to the valve via the sealed joint.

10. A semiconductor processing device comprising a process chamber and the gas supply means according to any one of claims 1 to 9.

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