Substrate processing apparatus and method

Abstract

A substrate processing apparatus (100) comprising a reaction chamber (130) for processing a substrate (110), a photon source (105) for supplying photons to the reaction chamber from above, a substrate support (115) for supporting the substrate, chemical inlets (141 a, 141 b) for supplying reactive chemicals to the reaction chamber, and chemical outlets (140 a, 140 b) for exhausting gases from the reaction chamber, the chemical outlets comprising surfaces separating the reaction chamber from the surrounding space.

Description

[Technical field]

[0001] The present invention relates generally to a substrate processing method and a substrate processing apparatus. More particularly, but not exclusively, the present invention relates to a photon-enhanced atomic layer deposition (also referred to as photo-ALD) apparatus. FIELD OF THEINVENTION The present invention relates to a substrate processing method and a substrate processing apparatus.

[0002] Please note that this section provides useful background information, but is not an admission that the technology described herein represents the state of the art.

[0003] In chemical deposition methods such as atomic layer deposition (ALD), light can be used to provide the additional energy required for surface reactions. However, the use of light sources can place certain demands on the deposition reactor and pose certain challenges. For example, in reactors where light is delivered into the reaction chamber through a window, the window can easily become dirty. Abstract

[0004] SUMMARY OF THE DISCLOSURE It is an object of certain embodiments of the present invention to address one or more of the above problems or other problems, or to provide an alternative solution to existing techniques.

[0005] According to a first exemplary aspect of the present invention, there is provided a substrate processing apparatus comprising: a reaction chamber for processing a substrate that can be unwound or wound, or a substrate supported on a substrate support; a photon source providing photons into the reaction chamber from an upper side of the reaction chamber; a chemical inlet for supplying a reactive chemical to the reaction chamber; a chemical outlet for exhausting gas from said reaction chamber; The chemical outlet separates the reaction chamber from an ambient space.

[0006] In some embodiments, the chemical outlet itself separates the reaction chamber from the ambient space. In some embodiments, the chemical outlet has a structure or surface that separates the reaction chamber from the ambient space. In some embodiments, the chemical outlet has a gap between the reaction chamber and the intermediate space.

[0007] In some embodiments, the apparatus comprises a window between the photon source (or a photon emitting element included in the photon source) and the reaction chamber.

[0008] In some embodiments, the apparatus comprises a window disposed between the photon source and the reaction chamber through which the photons can pass, and is configured to provide a purge flow to purge the reaction chamber side of the window.

[0009] In some embodiments, the window located between the reaction chamber and the photon source has at least one coating, which filters at least a portion of a spectral range of the light emitted by the photon source. In some embodiments, the window is provided with at least one separate filter element, for adjusting the spectral range to be filtered. In some embodiments, the photon spectral range reaching the reaction chamber after filtering has at least one narrow spectral range. Such a "narrow spectral range" is, for example, a range in which 90% of the transmitted radiant energy is contained within wavelengths in the range of 100 nm or 150-170 nm. In some embodiments, the spectrum of photons after filtering has a plurality of distinct spectral ranges. In some embodiments, the distinct spectral ranges are defined by preferred chemistry of process chemicals and / or substrates.

[0010] In some embodiments, the apparatus comprises an outer chamber (at least partially) surrounding the reaction chamber and defining an intermediate space; and an intermediate space inlet for providing a gas flow to the intermediate space.

[0011] In some embodiments, the intermediate space forms a space surrounding the reaction chamber.

[0012] In some embodiments, the device provides a gas path from the intermediate space inlet to the chemical outlet, such that the chemical outlet draws chemical from both the reaction chamber and the intermediate space. In some embodiments, the chemical outlet draws chemical from both the reaction chamber and the intermediate space through the gap.

[0013] In some embodiments, the substrate support is configured to move the substrate horizontally through the reaction chamber.

[0014] In some embodiments, the substrate support is configured to adjust the vertical position of the substrate.

[0015] In some embodiments, the apparatus comprises a shutter to control or modify the access of photons onto the surface of the substrate.

[0016] In some embodiments, the apparatus includes a protective chemical inlet that provides a flow of protective chemical to a recess between the photon source and the window.

[0017] In some embodiments, the pressure prevailing in the recess is greater than the ambient pressure.

[0018] In some embodiments the device comprises a padding portion between the window and a window fixing collar.

[0019] In some embodiments, the window is purged from both sides, i.e., on both the reaction chamber side (or bottom side) and the ambient pressure side (or low pressure side or top side).

[0020] In some embodiments, the apparatus includes a turbomolecular pump in an exhaust line of the reaction chamber and a flow regulation device in a parallel line emanating from the reaction chamber, bypassing the turbomolecular pump, the parallel lines joining downstream of the turbomolecular pump.

[0021] In some embodiments, the substrate extends from the reaction chamber beyond the chemical outlet into the intermediate space, the substrate being a moveable substrate web or a roll-to-roll substrate such as a substrate foil, and the apparatus is configured to cause the substrate to undergo chemical reactions only within the area bounded by the reaction chamber.

[0022] According to a second exemplary aspect of the present invention, there is provided a method, comprising the steps of: supplying a substrate that can be unwound or that is supported by a substrate support portion to a reaction chamber; providing photons into the reaction chamber from an upper side of the reaction chamber; providing a reactive chemical to the reaction chamber; venting gas from the reaction chamber through a chemical outlet; The chemical outlet separates the reaction chamber from an ambient space.

[0023] In some embodiments, the chemical outlet separates the reaction chamber from the ambient space such that the reaction chamber is on a first side of the chemical outlet and the intermediate space is on another or opposite side.

[0024] In some embodiments, the method includes allowing photons to pass through a window between the photon source and the reaction chamber, and purging the reaction chamber side of the window with a purge flow.

[0025] In some embodiments, the method includes providing an outer chamber at least partially surrounding the reaction chamber to define an intermediate space, and providing a gas flow to the intermediate space.

[0026] In some embodiments, the method includes providing a gas path from the interspace inlet to the chemical outlet.

[0027] In some embodiments, the method includes moving the substrate through the reaction chamber with the substrate support.

[0028] In some embodiments, the method includes adjusting a vertical position of the substrate by the substrate support.

[0029] In some embodiments, the method includes controlling or varying the access of photons to the surface of the substrate by a shutter.

[0030] In some embodiments, the method includes providing a flow of a protective chemical to a recess between the photon source and the window.

[0031] In some embodiments, the method includes providing a first route from the reaction chamber to an exhaust through a turbomolecular pump and a second route from the reaction chamber to an exhaust through a flow control device in a parallel line bypassing the turbomolecular pump.

[0032] In some embodiments, the method includes adjusting a vacuum level in the reaction chamber by selecting between the first route and the second route for gas evacuation.

[0033] In some embodiments, the method further comprises providing the roll-to-roll substrate, such as a movable substrate web or substrate foil, the substrate extending from the reaction chamber, past the chemical outlets, into the intermediate space;

[0034] conducting a chemical reaction only within an area bounded by the reaction chamber; Includes.

[0035] In some embodiments, the method includes performing a continuous self-saturating surface reaction on a substrate surface within the reaction chamber.

[0036] According to a further exemplary aspect of the present invention, there is provided a substrate processing apparatus comprising: a reaction chamber for processing the substrate; a photon source providing photons into the reaction chamber from an upper side of the reaction chamber; a substrate support for supporting the substrate; a chemical inlet for supplying a reactive chemical to the reaction chamber; a chemical outlet for exhausting gas from said reaction chamber; The chemical outlet separates the reaction chamber from an ambient space.

[0037] According to a further exemplary aspect of the present invention, there is provided a method comprising the steps of: supporting a substrate within a reaction chamber; providing photons into the reaction chamber from an upper side of the reaction chamber; providing a reactive chemical to the reaction chamber; venting gas from the reaction chamber through a chemical outlet; The chemical outlet separates the reaction chamber from an ambient space.

[0038] Although various concepts and embodiments have been introduced, they are not presented to limit the scope of the invention. The above-mentioned embodiments are merely used to illustrate specific aspects and steps that may be used in implementing the present invention. Some examples may be presented only with reference to specific exemplary aspects. It should be understood that some embodiments are applicable to other embodiments. The embodiments may be appropriately combined. [Brief description of the drawings]

[0039] The invention will now be described, by way of example only, with reference to the accompanying drawings, in which: [Figure 1]1 is a schematic cross-sectional view of an apparatus according to an embodiment. [Diagram 2] 1 illustrates a window protection flow according to an embodiment. [Diagram 3] 1 shows a perspective view of a portion of an apparatus according to an embodiment. [Figure 4] 1 illustrates the direction of purge flow according to an embodiment. [Diagram 5] 1 is a schematic cross-sectional view of a reaction chamber according to an embodiment. [Figure 6] 1 is another schematic cross-sectional view of an apparatus according to an embodiment. [Figure 7] FIG. 2 is a schematic diagram of an exhaust line configuration according to an embodiment. Detailed explanation

[0040] In the following description, the atomic layer deposition (ALD) technique is used as an example.

[0041] The basics of ALD growth mechanisms are known to those skilled in the art. ALD is a specialized chemical deposition method based on the sequential introduction of at least two reactive precursor species to at least one substrate. A basic ALD deposition cycle consists of four sequential steps: Pulse A, Purge A, Pulse B, and Purge B. Pulse A consists of a first precursor vapor, and Pulse B consists of another precursor vapor. Inert gases and vacuum pumps are used in Purge A and Purge B to purge (remove) gaseous reaction by-products and residual reactant molecules from the reaction space. A deposition sequence consists of at least one deposition cycle. The deposition sequence is organized such that the deposition cycles are repeated until a thin film or coating of the desired thickness is produced. The deposition cycles can be simple or more complex. For example, a deposition cycle can include three or more reactant vapor pulses separated by purge steps. Also, some of the purge steps can be omitted. In plasma-assisted ALD, such as PEALD (Plasma-Enhanced Atomic Layer Deposition) and Photon-Assisted ALD (Photon-Assisted ALD) described herein, one or more deposition steps are assisted by providing additional energy for surface reactions through the supply of plasma. Alternatively, any of the reaction precursors can be replaced by energy (e.g., simply light), leading to a single precursor ALD process. Pulse and purge sequences can therefore vary depending on the individual case. These deposition cycles form a timed deposition sequence controlled by a logic unit or microprocessor. Thin films grown by ALD are dense, pinhole-free, and of uniform thickness.

[0042] In the context of substrate processing, at least one substrate is typically exposed to multiple, time-separated pulses of precursors in a reactor (or reaction chamber), whereby material is deposited on the substrate surface in a succession of self-saturating surface reactions. In the context of this application, the term ALD is intended to include all applicable ALD-based techniques, as well as any equivalent or closely related techniques, such as the following ALD subtypes: MLD (Molecular Layer Deposition), plasma-assisted ALD, e.g. PEALD (Plasma Enhanced Atomic Layer Deposition), photon-assisted ALD (also known as flash enhanced ALD or photon-enhanced ALD).

[0043] However, the present invention is not limited to ALD techniques, and may be used in a wide variety of substrate processing equipment, including chemical vapor deposition (CVD) reactors and etching equipment, such as atomic layer etching (ALE) reactors.

[0044] 1 is a schematic cross-sectional view of an apparatus 100 according to one embodiment. The apparatus 100 is a substrate processing apparatus, which can be, for example, a photo-assisted ALD reactor. In some embodiments, the apparatus 100 includes a reaction chamber 130, a photon source 105, a substrate support (or substrate holder) 115, at least one chemical inlet 141 a, 141 b, and at least one chemical outlet 140 a, 140 b.

[0045] The substrate 110 is supported by a substrate support 115. In some embodiments, the substrate support 115 is configured to move the substrate 110 in a horizontal direction, as indicated by the double arrow in FIG. 1 . This movement may be for loading or unloading the substrate, or for moving the substrate within the reaction chamber 130 during substrate processing. In some embodiments, the substrate 110 is a flat substrate or a wafer. In some embodiments, the substrate support 115 is configured to move the substrate 110 in a vertical direction. In some embodiments, the substrate support 115 is configured to move the substrate 110 in both horizontal and vertical directions.

[0046] The chemical inlet 141a provides reactive chemicals to the reaction chamber 130. In some embodiments, the chemical inlet 141a has a pipe or tube-like structure. In some embodiments, the chemical inlet 141a has a portion that extends horizontally within the reaction chamber 130. In some embodiments, the chemical inlet 141a has a portion that runs horizontally within the reaction chamber 130 above the surface of the substrate 110 that is exposed to the reactive chemicals. In some embodiments, the chemical inlet has one or more openings that are oriented toward the substrate surface. The openings may be angled to be oriented toward the substrate surface. In some embodiments, the chemical inlet 141a is spaced from the wall of the reaction chamber.

[0047] The chemical outlet 140a allows for the discharge of chemicals from the reaction chamber 130. In some embodiments, the chemical outlet 140a has a pipe or tube-like structure. In some embodiments, the chemical outlet 140a has a portion that runs horizontally on a lateral side within the reaction chamber 130. In some embodiments, the chemical outlet 140a has a surface that separates the reaction chamber 130 from an ambient space. In some embodiments, the surface of the chemical outlet 140a forms a complete reaction chamber sidewall or forms a part of the reaction chamber sidewall. The ambient space of the reaction chamber 130 may be an intermediate space 160 formed between the reaction chamber 130 and a wall of the vacuum chamber 120 that surrounds the reaction chamber 130. In some embodiments, the intermediate space 160 has a pressure higher than the pressure of the reaction chamber 130 during substrate processing.

[0048] In some embodiments, the device 100 has a gap between the chemical outlet 140a and the substrate support 115, or between the chemical outlet 140a and another surface facing the chemical outlet 140a, e.g. the substrate 110, below the chemical outlet 140a. In some embodiments, the substrate support 115 has a recess that fits the shape of the substrate 110 so as to allow the gap to remain constant. In other words, in some embodiments, when the substrate 110 is placed in the recess, the top surface of the substrate support 115 and the top surface of the substrate 110 are at the same height. In some embodiments, the gap has a horizontal extent, so that at the side (or at the side corner) of the reaction chamber 130, a horizontal slit is formed. The chemical outlet 140a has an opening or a set of openings facing the gap. In some embodiments, the opening is located at the bottom surface of the chemical outlet 140a. In some embodiments, the openings are distributed over the entire (horizontal) length of the gap. In some embodiments, the opening is at least partially oriented in a different direction to the substrate. In some embodiments, a pump connected to the chemical outlet 140a draws chemicals from both the reaction chamber 130 and the other side of the gap, i.e. the ambient space (or intermediate space 160), through the gap to the chemical outlet 140a. The latter flow is shown in FIG. 1 by arrows 161. Due to the pressure difference between the reaction chamber 130 and the ambient space, chemicals from the reaction chamber 130 are prevented from entering the ambient space. That is, the pressure of the ambient space provides a counter pressure that prevents chemicals from escaping from the reaction chamber 130. And / or a flow from the ambient space into the gap provides a counter flow that prevents chemicals from escaping from the reaction chamber 130.

[0049] In some embodiments, the apparatus 100 includes multiple chemical inlets. For example, as depicted in FIG. 1, the apparatus 100 includes chemical inlet 141a and corresponding chemical inlet 141b. Chemical inlet 141b may be located symmetrically with respect to chemical inlet 141a and reaction chamber 130. In FIG. 1, inlet 141b is located opposite inlet 141a. Inlet 141a may provide a first reactive chemistry to reaction chamber 130, and inlet 141b may provide a different reactive chemistry.

[0050] Similarly, in some embodiments, the device 100 may include multiple chemical outlets, such as chemical outlet 140a and corresponding chemical outlet 40b, as depicted in Figure 1. Outlets 140a and 140b may be located at opposite ends of reaction chamber 130.

[0051] In some embodiments, the photon source 105 provides photons to the reaction chamber 130 from the top side of the reaction chamber 130. The photon source 105 comprises a photon emitting element 15 that emits photons. The electromagnetic radiation used may be light, ultraviolet (UV) or other wavelengths of radiation. Depending on the electromagnetic radiation used, a suitable photon emitting element 15 is selected, such as a UV lamp.

[0052] In some embodiments, photons emitted from photon emitting element 15 travel through window 150. In some embodiments, photon emitting element 15 is located on the ambient pressure side of window 150, where vacuum conditions prevail on the other side of window 150.

[0053] In some embodiments, the window 150 located between the reaction chamber 130 and the photon source 105 has at least one coating, not shown, which filters at least a portion of the spectral range of the light emitted from the photon source 105. In some embodiments, the window 150 is provided with at least one separate filter element (not shown) in order to adjust the spectral range to be filtered. In some embodiments, the spectral range of photons reaching the reaction chamber 130 after filtering has at least one narrow spectral range. Such a "narrow spectral range" is, for example, a range such as 90% of the transmitted radiant energy being contained in wavelengths in the range of 100 nm or 150-170 nm. Thus, in some embodiments, the device 100 is configured to provide the reaction chamber 130 with photons in at least one narrow spectral range. In some embodiments, the spectrum of photons after filtering has a number of distinguishable spectral ranges. In such embodiments, the device 100 is configured to provide the reaction chamber 130 with photons in at least one narrow spectral range. In some embodiments, the distinct spectral ranges are defined by the preferred chemistry of the process chemistry and / or substrate 110 .

[0054] In some embodiments, a shutter 155 is disposed between the window 150 and the substrate 110. The shutter 155 is used to control the area of ​​the substrate surface that is exposed to the emitted photons. In some embodiments, the shutter 155 is located in a vertical channel. In some embodiments, the vertical channel runs through the top wall of the vacuum chamber 120. In some embodiments, the shutter 155 is configured to block at least a portion of the spectrum emitted from the photon source 105.

[0055] In some embodiments, the reaction chamber side of window 150 is purged by a purge flow. To this end, the apparatus is configured to provide a purge flow for purging the reaction chamber side of window 150 during substrate processing. In some embodiments, the purge flow enters the reaction chamber side of window 150 from the side depicted by arrow 151 in FIG. 1. The purge flow then redirects downward toward substrate 110. The purge flow exits the reaction chamber through the aforementioned gap and enters chemical outlets 140a, 140b.

[0056] During substrate processing, the substrate 110 is processed in a desired manner, such as ALD, in the reaction chamber 130. For example, the substrate may be alternately exposed to the following materials, etc. a first reactive chemical and a second (different) reactive chemical; A first reactive chemical and a second reactive chemical that is complementary to the photon exposure; First reactive chemical and photon exposure (single precursor process).

[0057] During processing, the substrate 110 may be located entirely within the reaction chamber 130. However, in some embodiments, the substrate 110 may be present beyond the gap, as shown in FIG. 1. In the latter case, the chemical reaction (e.g., deposition) may only occur within the region that is present within the reaction chamber 130 at any given time. One such exemplary configuration is a roll-to-roll deposition apparatus (not shown). A roll-to-roll deposition apparatus has rolls at either end of the reaction chamber 130, i.e., an unwind roll and a rewind roll. In such systems, or other systems in which the substrate 110 is present beyond the gap, the portion 115 shown in FIG. 1 and FIG. 5 may actually represent an unwindable and rewindable substrate. For example, it may represent a moving substrate web or a moving substrate foil.

[0058] In some embodiments, the reaction chamber 130 (and in some embodiments the vacuum chamber 120) is heated or cooled by suitable heating or cooling devices, not shown. In some embodiments, such heating or cooling means includes thermal insulation means between the heating or cooling means and the exterior of the space being heated or cooled.

[0059] FIG. 2 shows a window protection flow (above-mentioned purge flow) according to an embodiment. As above-mentioned, in some embodiments, the device 100 comprises a window 150 between the photon emission element 15 and the substrate 110 (or the reaction chamber 130). In a practical embodiment, the window 150 isolates the vacuum pressure side of the device 100 from the ambient pressure side. The window 150 is fixed by a frame portion 148, which presses its upper portion against a sealing surface. In some embodiments, the sealing surface is provided by a counter portion (such as a main portion) 147 located on the opposite side (or vacuum pressure side) of the window 150 from the pressing surface. In some embodiments, the counter portion 147 comprises a groove and a seal (such as an O-ring seal) 152 in the groove. In some embodiments, the device 100 comprises a protection flow guide portion 146. The protection flow guide portion 146 is located below the window 150 (or on the vacuum pressure side of the window 150). In some embodiments, protective flow guide 146 directs purge flow onto the reaction chamber side of window 150. In some embodiments, components 146-148 are made of metal.

[0060] In some embodiments, a padding portion 149 is disposed between the window 150 and the frame portion (or collar portion) 148. In some embodiments, the padding portion 149 is a soft and / or resilient metal part, for example a soft metal alloy part. A suitable material for the padding portion 149 is for example EN-AW1050 aluminum, which is a very soft alloy. The purpose of the padding portion 149 is to relieve stress experienced by the window 150.

[0061] On the ambient pressure side of the window 150, the frame portion 148 is sealed to the next part (eg, the upper body part) by a suitable sealing method. For example, the frame portion 148 may have a groove in which the seal 153 is located.

[0062] In some embodiments, a recess may be formed between window 150 and photon-emitting element 15 (element 15 not shown in FIG. 2). Recess 154 is on the ambient pressure side of window 150 and has a lower portion defined by an upper side of window 150.

[0063] Recess 154 is further shown in Figs. 3 and 4. An inert gas, such as nitrogen, is fed into a channel (first channel) through a first fitting 181. The first channel passes through frame portion 148. The channel terminates in recess 154. In some embodiments, the flow rate in the channel is regulated by a regulating device 156, such as an adjustable orifice. Regulating device 156 may be attached to or configured by the channel. The inert gas flows from the recess inlet across recess 154 to the recess outlet, purging the ambient pressure side of window 150 in the process. In some embodiments, the flow of inert gas across recess 154 occurs diagonally across the recess, as illustrated by arrow 171. The recess outlet initiates a second channel. The second channel passes through frame portion 148. The second channel exits photon source 105 through a second fitting. In some embodiments, the flow rate in the second channel is regulated by a regulating device 157 (e.g., an adjustable orifice). The regulating device 157 may be attached to the second channel or may be formed by the second channel.

[0064] In some embodiments, the pressure within recess 154 is maintained at a higher level than the ambient environmental pressure (room pressure) to prevent ambient air from leaking into cavity 154. In some embodiments, the pressure within recess 154 is regulated by regulating devices 156, 157. For example, in some embodiments, increasing the pressure within recess 154 is achieved by allowing a greater amount of inert gas to enter recess 154 compared to the amount of inert gas that exits recess 154.

[0065] Figure 5 is an expanded view of the reaction chamber region of an apparatus of the type depicted in Figure 1, according to one embodiment. See the description of Figure 1 for the general structure and operation of the apparatus.

[0066] The chemical inlets 141a, 141b have one or more openings oriented toward the surface of the substrate 110. These openings may be implemented by directional holes. In some embodiments, the chemical inlets 141a, 141b are rotatable to adjust the angle of the openings pointing toward the substrate surface. FIG. 5 illustrates further chemical inlets 142a, 142b. The structure and function of these additional chemical inlets 142a, 142b are essentially the same as the chemical inlets 141a, 141b. In some embodiments, as illustrated in FIG. 5, the additional chemical inlets 142a, 142b have openings or directional holes for flowing inert gas toward the corners of the reaction chamber 130 in order to purge the corners. The chemical outlets 140a, 140b draw chemicals from both the reaction chamber 130 and the intermediate space 160. Incoming photons are indicated by arrows 502.

[0067] 6 is another schematic cross-sectional view of an apparatus 100 according to an embodiment. The apparatus 100 has a substrate support 115 in the form of a carriage. The substrate 110 is supported on an upper side of the substrate support 115. In some embodiments, the substrate support 115 comprises at least one moving element 635, such as a wheel, for moving the substrate support 115 and thus the substrate 110 in a horizontal direction.

[0068] In some embodiments, the substrate support 115 has a height adjustment mechanism, which may be, for example, one or more screws inside the substrate support structure. The height adjustment mechanism is depicted in Figure 6 as a vertical double arrow. In some embodiments, the height of the gap between the chemical outlet 140a and the substrate support 115 is adjusted by the height adjustment mechanism.

[0069] In some embodiments, the substrate support 115 includes an intermediate space inlet 690 (as depicted by the arrows) for allowing inert gas to flow into the intermediate space 160. The inert gas exits the intermediate space 160 through the gap and is drawn into the chemical outlets 140a, 140b. In some embodiments, the intermediate space inlet 690 is additionally or alternatively located elsewhere, for example in a wall of the vacuum chamber 120.

[0070] In some embodiments, one or more substrates 110 are loaded into the intermediate space 160 or the reactor chamber 130 through a port 631 in the wall of the vacuum chamber 120. One or more substrates 110 may be loaded onto a substrate support through the port 631, or a carriage carrying the substrate may be loaded through the port 631 together with the substrate. The substrate may be removed through the same port 631 or through a different port, such as port 632, which may be in the opposite wall of the vacuum chamber 120 to port 631. In the case of a roll-to-roll deposition reactor, a substrate that can be unwound and wound may move between ports 631 and 632.

[0071] In some embodiments, the substrate support is located outside the reaction chamber 130. In some embodiments, the substrate support 115 forms only a bottom surface within the reaction chamber 130. Horizontal movement of the substrate support 115 within the intermediate space 160 causes the substrate 110 to move horizontally within the reaction chamber 130.

[0072] In some embodiments, the photon source 105 is removably attached to the apparatus or vacuum chamber (lid) structure. In some embodiments, the apparatus 100 or the photon source 105 comprises a mounting portion 621 and a fastening means 622 (e.g., a screw or bolt). In some embodiments, the photon source 105 is removable vertically (upwards) for maintenance.

[0073] FIG. 7 is a schematic diagram of an exhaust line structure according to an embodiment. The exhaust line system exhausts chemicals from the reaction chamber 130 and the intermediate space 160. The exhaust line system starts from the reaction chamber 130 and the intermediate space 160 in the form of chemical outlets 140a, 140b and also from another optional outlet 791. In some embodiments, the outlets 140a, 140b represent a type of structure such as a pump tube. Chemicals flow out of the reaction chamber 130 and the intermediate space 160 along such pump tube. In some embodiments, the exhaust line system is divided into two parallel lines 744, 745. The chemical outlets 140a, 140b from the reaction chamber 130 lead to a first branch 744. In some embodiments, the optional outlet 791 leads to a second branch 745. The branch 744 comprises a vacuum pump, preferably a turbomolecular pump 71. Branch 755 has two valves (valves 74 and 75) arranged in parallel. In some embodiments, branches 744 and 745 are separated by valve 73 (before any pump or before pump 71). In some embodiments, valves 74 and 75 are used to open and close branch 745 as required. In some embodiments, valve 74 is restricted or at least partially restricted. Due to the restriction in valve 74, in some embodiments, the evacuation of reaction chamber 130 and intermediate space 160 is more uniform when operating in different pressure regions than with only one valve. In some embodiments, line 744 is provided with a flow regulation device 72, such as a gate valve. In some embodiments, flow regulation device 72 is arranged upstream of pump 71. Downstream of elements 71-75, branches 744 and 745 join and in some embodiments lead to a vacuum line. In some embodiments, the vacuum line is followed by a pump or vacuum pump. In some embodiments, valve 73 is used to prevent (by closing) backflow of chemicals.In some embodiments, valve 73 is used (by opening) to (quickly) vent using outlets 140a, 140b and optionally 791 before (turbomolecular) pump 71 is turned on. Flow through branch 744 is then restricted or closed by flow regulating device 72.

[0074] In some embodiments, a first route from the reaction chamber 130 to the vacuum line is provided through a (turbomolecular) pump 71, and a second route from the reaction chamber 130 to the vacuum line is provided through flow control devices or valves 74 and / or 75 in a parallel line bypassing the turbomolecular pump 71. In some embodiments, the vacuum level in the reaction chamber 130 is regulated by the selection of the above mentioned routes. In some embodiments, to start the (turbomolecular) pump 71, the gate valve 72 is opened and the valves 73, 74, 75 are closed.

[0075] Some technical effects of one or more embodiments disclosed herein are listed below, but are not intended to limit the scope and interpretation of the claims. One technical effect is to provide an ALD reaction under low pressure. Another technical effect is to protect a window between a photon source and a reaction chamber, or to protect the path of photons from the photon source to the reaction chamber from exposure to deglaciating gases. Another technical effect is to form a reaction space on a moving substrate by defining a boundary between an intermediate space and the reaction chamber at the point where it is connected to a pump line. In some embodiments, the pump line is a turbomolecular pump line that allows evacuation of the reaction chamber required for photo-ALD processes. Another technical effect is to optimize a photo-ALD process by adjusting the flow of chemicals from chemical inlets in different directions, so that the flow of chemicals is toward the substrate but away from the window. Another technical effect is to protect both sides of the window by purging both sides of the window.

[0076] The foregoing description provides a complete and informative description of the best mode for carrying out the invention currently contemplated by the inventors, using non-limiting examples of specific implementations and embodiments of the invention. However, as will be apparent to those skilled in the art, the details of the above-described embodiments do not limit the invention, and equivalent means may be used to implement other embodiments without departing from the characteristics of the invention.

[0077] Moreover, features of the embodiments of the present invention disclosed above may be used without the corresponding use of other features. Accordingly, the foregoing description should be considered as merely illustrative of the principles of the present invention, and not in limitation thereof. The scope of the present invention is therefore limited only by the appended claims.

Claims

1. A substrate processing apparatus, comprising: a reaction chamber for processing a substrate that can be unwound or wound, or a substrate supported on a substrate support; a photon source providing photons into the reaction chamber from an upper side of the reaction chamber; a chemical inlet for supplying a reactive chemical to the reaction chamber; a chemical outlet for exhausting gas from said reaction chamber; the chemical outlet separating the reaction chamber from an ambient space, the apparatus further comprising: a window disposed between the photon source and the reaction chamber through which the photons can pass, the window being configured to provide a purge flow for purging the reaction chamber on a side of the window; the chemical inlet is disposed between the chemical outlet and where the purge flow is introduced into the reaction chamber; Device.

2. The apparatus of claim 1, configured to supply the purge flow from multiple locations lateral to the window.

3. an outer chamber surrounding the reaction chamber and defining an intermediate space; an interspace inlet for supplying a gas flow to the interspace; 3. The apparatus according to claim 1 or 2, comprising:

4. The apparatus of claim 3 , providing a gas path from the midspace inlet to the chemical outlet.

5. The apparatus of claim 1 , wherein the substrate support is configured to move the substrate horizontally through the reaction chamber.

6. The apparatus of claim 5 , wherein the substrate support is configured to adjust a vertical position of the substrate.

7. 7. An apparatus according to claim 1, comprising a shutter for controlling or modifying the access of photons onto a surface of the substrate.

8. 8. The apparatus of claim 1, further comprising a protective chemical inlet for providing a flow of protective chemical to a recess between the photon source and the window.

9. The apparatus of claim 8 , wherein the pressure prevailing in the recess is greater than the ambient environmental pressure.

10. 10. An apparatus as claimed in any preceding claim, comprising a padding portion between the window and a window fixing collar.

11. 11. The apparatus according to claim 1, further comprising a turbomolecular pump in an exhaust line of the reaction chamber, and a flow control device in a parallel line originating from the reaction chamber that bypasses the turbomolecular pump, the parallel lines joining downstream of the turbomolecular pump.

12. 2. The apparatus of claim 1, the substrate extends from the reaction chamber, past the chemical outlet, into the ambient space, the substrate being a movable substrate web or a substrate foil that can be unwound and rolled up; The apparatus is configured to perform a chemical reaction on the substrate only within the region bounded by the reaction chamber. Device.

13. A method comprising: providing a substrate that can be unwound or that is supported by a substrate support to a reaction chamber; providing photons into the reaction chamber from an upper side of the reaction chamber; providing a reactive chemical to the reaction chamber; venting gas from the reaction chamber through a chemical outlet; the chemical outlet separating the reaction chamber from an ambient space, the method further comprising: allowing photons to pass through a window between a photon source and the reaction chamber; purging the reaction chamber side of the window with a purge flow; wherein the reactive chemical is provided between the chemical outlet and where the purge flow is introduced.

14. The method of claim 13, wherein the purge flow is supplied from multiple locations lateral to the window.

15. providing an outer chamber surrounding the reaction chamber to define an intermediate space; providing a gas flow to the intermediate space; The method of claim 13 or 14, comprising:

16. The method of claim 15, comprising providing a gas path from an intermediate space inlet to the chemical outlet that supplies a gas flow to the intermediate space.

17. 17. The method of any of claims 13 to 16, comprising moving the substrate through the reaction chamber by the substrate support.

18. The method of claim 17 , comprising adjusting a vertical position of the substrate by the substrate support.

19. 19. A method according to any of claims 13 to 18, comprising controlling or varying the access of photons to the surface of the substrate by a shutter.

20. 20. The method of any of claims 13 to 19, comprising providing a flow of protective chemical to a recess between the photon source and the window.

21. 21. The method of claim 13, comprising providing a first route from the reaction chamber to an exhaust through a turbomolecular pump and a second route from the reaction chamber to an exhaust through a flow control device in a parallel line bypassing the turbomolecular pump.

22. 22. The method of claim 21, comprising adjusting a vacuum level in the reaction chamber by selecting either the first route or the second route for gas evacuation.

23. providing the unrollable substrate, such as a movable substrate web or substrate foil, extending from the reaction chamber, past the chemical outlet, and into the ambient space; conducting a chemical reaction only within an area bounded by the reaction chamber; The method of claim 13, comprising:

Images