Modular Recipe Control and Calibration (MRCC) equipment used to level plasma in a multiple station system

Abstract

To provide recipe-controlled radio frequency (RF) power adjustment to each station of a processing chamber in a modular manner.SOLUTION: An embodiment includes a circuit tuning RF power. The circuit includes a low- to mid-frequency (LF / HF) tuning circuit including a variable LF / MF capacitor coupled in series with a low-frequency (LF) / mid-frequency (MF) inductor. The LF / MF tuning circuit is coupled between ground and a common node configured to receive RF input. The circuit includes a high-frequency (HF) tuning circuit coupled in parallel to the LF / MF tuning circuit between the ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF / MF inductor of the LF / MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF / MF capacitor or the variable HF capacitor.SELECTED DRAWING: Figure 4B

Description

[Technical field]

[0001] The present embodiments relate to semiconductor substrate processing equipment tools, and more specifically to a modular recipe control and calibration (MRCC) apparatus used to level plasma across multiple stations in a semiconductor processing system. [Background technology]

[0002] In multi-station semiconductor processing systems, including those performing deposition, the input RF power is split and distributed to multiple stations. In particular, the input RF power is split using one module or box for all stations, meaning that there is no adjustment available per station after splitting the RF power. Using a single control box, it is not possible to control the RF power delivered to each station to achieve any desired power distribution (leveled or not).

[0003] In addition, the real estate in the modules used to split the RF power may be limited; the modules split and distribute the incoming RF power to multiple stations. This can be problematic as clearance and creepage limitations become increasingly difficult to meet, thereby creating the risk of arcing within the internal circuits.

[0004] Additionally, current technology uses series elements to adjust the output RF power delivered via low to mid frequency RF power and / or high frequency RF power. However, due to the nature of the topology, when adjusting the output RF power, there is no isolation between the circuit elements used for adjustment. That is, adjusting the low to mid frequency RF power affects the high frequency RF power, and conversely, adjusting the high frequency RF power affects the low to mid frequency RF power. To address the lack of isolation, additional circuit elements may be required. However, this requires increasing the volume of the module used to split the RF power, which is not always possible. Also, the additional circuitry may create a risk of very high voltages due to series resonance.

[0005] In addition, current technology implements manual adjustment of capacitive elements in modules used to split the RF power, which then splits and distributes the incoming RF power to multiple stations. However, once the capacitive elements are set, the capacitor position (and value) is not monitored any more. That is, once the capacitive elements are set, there is no active adjustment of the RF power. Furthermore, if communication is disconnected from the system or the power is cycled, the final capacitor position is unknown.

[0006] The background discussion provided herein is intended to generally indicate the context of the present disclosure. The work of the presently named inventors may not be admitted, explicitly or implicitly, as prior art to the present disclosure, as are aspects of the discussion that, to the extent described in this background, do not qualify as prior art at the time of filing.

[0007] It is in this context that embodiments of the present disclosure arise. Summary of the Invention

[0008] The present embodiments are directed to solving one or more problems found in the related art, specifically, providing recipe-controlled radio frequency (RF) power adjustment to each station of a processing chamber in a modular manner. Several inventive embodiments of the present disclosure are described below.

[0009] An embodiment of the present disclosure includes a circuit for adjusting RF power. The circuit includes a low frequency (LF) to mid frequency (MF) adjustment circuit including a variable LF / MF capacitor coupled in series with a low frequency (LF) / mid frequency (MF) inductor. The LF / MF adjustment circuit is configured to operate between about 5 kHz (kilohertz) and 400 kHz in the low frequency range and 300 kHz to 3 MHz (megahertz) or higher in the mid frequency range. The LF / MF adjustment circuit is coupled between a ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) adjustment circuit coupled in parallel with the LF / MF adjustment circuit between the ground and the common node. The HF adjustment circuit includes a variable HF capacitor coupled in series with the HF inductor. When adjusting the variable LF / MF capacitor, the HF adjustment circuit is isolated from the LF / MF adjustment circuit. Additionally, when adjusting the variable HF capacitor, the LF / MF adjustment circuit is isolated from the HF adjustment circuit. That is, when the variable LF / MF capacitor or the variable HF capacitor is adjusted, cross-parallel isolation occurs between the LF / MF inductor of the LF / MF adjustment circuit and the HF inductor of the HF adjustment circuit.

[0010] Another embodiment of the present disclosure includes an apparatus for regulating RF power. The apparatus includes an RF dual source power generator including an LF / MF power generator providing LF / MF power at low to mid frequencies and an HF power generator providing HF power at high frequencies. For example, the LF / MF power generator is configured to operate between about 5 kHz (kilohertz) and 400 kHz in the low frequency range and / or between 300 kHz and 3 MHz or more (megahertz) in the mid frequency range depending on its configuration. The apparatus includes a split-input RF (SIRF) distribution box configured to receive LF / MF power and to receive HF power. The SIRF distribution box is further configured to combine and distribute at least one of the LF / MF power and the HF power as one or more split RF inputs. The apparatus includes one or more modular remote control calibration (MRCC) circuits for one or more processing stations. Each MRCC circuit includes an LF / MF regulation circuit coupled in parallel to the HF regulation circuit between ground and a corresponding common node configured to receive the corresponding split RF input. The LF / MF tuning circuit includes a variable LF / MF capacitor coupled in series with the LF / MF inductor, the LF / MF tuning circuit coupled between ground and a corresponding common node. The HF tuning circuit includes a variable HF capacitor coupled in series with the HF inductor, the HF tuning circuit coupled between ground and a corresponding common node. The corresponding common node is configured to provide a corresponding RF output to a corresponding station after tuning. When adjusting the variable LF / MF capacitor or the variable HF capacitor, cross-parallel isolation occurs between the LF / MF inductor of the LF / MF tuning circuit and the HF inductor of the HF tuning circuit.

[0011] Another embodiment of the present disclosure includes an assembly for use in a process chamber for depositing a film on a wafer. The assembly includes an RF dual source power generator including an LF / MF generator providing LF / MF power at low to mid frequencies and an HF power generator providing HF power at high frequencies. For example, the LF / MF power generator is configured to operate between about 5 kHz (kilohertz) and 400 kHz in the low frequency range and / or between 300 kHz and 3 MHz or more (megahertz) in the mid frequency range, depending on its configuration. The assembly includes a split-input RF (SIRF) distribution box configured to receive the LF / MF power and to receive the HF power. The SIRF distribution box is further configured to distribute at least one of the LF / MF power and the HF power in combination as a first split RF input, a second split RF input, a third split RF input, and a fourth split RF input. The assembly includes a first MRCC circuit for a first processing station, a second MRCC circuit for a second processing station, a third MRCC circuit for a third processing station, and a fourth MRCC circuit for a fourth processing station. Each MRCC circuit includes an LF / MF tuning circuit coupled in parallel to the HF tuning circuit between ground and a corresponding common node configured to receive a corresponding split RF input. The LF / MF tuning circuit includes a variable LF / MF capacitor coupled in series with an LF / MF inductor, the LF / MF tuning circuit coupled between ground and the corresponding common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor, the HF tuning circuit coupled between ground and the corresponding common node. The corresponding common node is configured to provide a corresponding RF output to the corresponding station after tuning. When adjusting the variable LF / MF capacitor or the variable HF capacitor, cross-parallel isolation occurs between the LF / MF inductor of the LF / MF tuning circuit and the HF inductor of the HF tuning circuit.

[0012] These and other advantages will be recognized by those of ordinary skill in the art upon reading the entire specification and claims.

[0013] The embodiments may be best understood by referring to the following description taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0014] [Figure 1A] FIG. 1A is a diagram illustrating a substrate processing system illustrating the application of RF power to a pedestal used to process a wafer, eg, to form a film thereon, according to one embodiment of the present disclosure.

[0015] [Figure 1B] FIG. 1B illustrates a substrate processing system showing application of RF power to a showerhead used to process a wafer, for example, to form a film thereon, according to one embodiment of the present disclosure.

[0016] [Diagram 2] FIG. 2 is a top view of a multi-station processing tool in which four processing stations are provided, according to one embodiment of the present disclosure.

[0017] [Diagram 3] FIG. 3 is a schematic diagram of an embodiment of a multi-station processing tool with inbound and outbound load locks according to one embodiment of the present disclosure.

[0018] [Figure 4A] FIG. 4A illustrates an exemplary chemical vapor deposition (CVD) system configured for automatic leveling of RF power distribution to multiple stations, in accordance with one embodiment of the present disclosure.

[0019] [Figure 4B] FIG. 4B is a diagram illustrating automatic leveling of RF power distribution to multiple stations using one or more modular remote controlled calibration (MRCC) systems, according to one embodiment.

[0020] [Figure 5A] FIG. 5A is a diagram of an MRCC circuit configured for automatic adjustment of RF power, including a low-to-mid frequency adjustment circuit and a high frequency adjustment circuit, according to one embodiment of the disclosure.

[0021] [Figure 5A-1] FIG. 5A-1 illustrates cross-parallel isolation between the LF / MF conditioning circuit and the HF conditioning circuit of the MRCC diagram of FIG. 5A according to one embodiment of the disclosure.

[0022] [Figure 5B] FIG. 5B is a diagram illustrating a three-dimensional (3D) graph illustrating RF power regulation using an MRCC circuit by adjusting a capacitor in a low-to-mid frequency regulation circuit independent of a capacitor value in a high frequency regulation circuit of an MRCC circuit configured for automatic leveling of distribution of RF power to multiple stations in accordance with one embodiment of the present disclosure.

[0023] [Figure 5C] FIG. 5C illustrates a 3D graph showing RF power regulation using an MRCC circuit by adjusting a capacitor in a high frequency regulation circuit that is independent of the values ​​of the capacitors in the low to mid frequency regulation circuits of an MRCC circuit configured for automatic leveling of RF power distribution to multiple stations in accordance with one embodiment of the present disclosure.

[0024] [Figure 5D] FIG. 5D is a diagram illustrating a recipe-controlled calibration system including series elements for splitting the RF power supplied to multiple stations, according to one embodiment of the present disclosure.

[0025] [Figure 5E] FIG. 5E illustrates a 3D graph showing RF power adjustment using the recipe-controlled calibration system of FIG. 5D showing the effect on the high frequency tuning circuit when adjusting the low to mid frequency tuning circuit, in accordance with one embodiment of the present disclosure.

[0026] [Figure 5F] FIG. 5F illustrates a 3D graph showing RF power adjustment using the recipe-controlled calibration system of FIG. 5D showing the effect on the low to mid frequency tuning circuits when adjusting the high frequency tuning circuits, in accordance with one embodiment of the present disclosure.

[0027] [Figure 6] FIG. 6 is a perspective view of a system configured for automatic leveling of RF power distribution to multiple stations using one or more MRCC systems, according to one embodiment of the disclosure.

[0028] [Figure 7A] FIG. 7A is a perspective view of an MRCC system configured for conditioning RF power to a processing station and including a floating motor mount for interfacing with a capacitor of a low to mid frequency conditioning circuit or a high frequency conditioning circuit according to one embodiment of the disclosure.

[0029] [Figure 7B] FIG. 7B is a perspective view of a clamshell configuration of a MRCC system configured for regulating RF power to a processing station according to one embodiment of the present disclosure.

[0030] [Figure 7C] FIG. 7C is a perspective view of an MRCC system configured for regulating RF power to a processing station illustrating the clamshell exterior of the MRCC system and the internal components of the MRCC system enclosed by the clamshell exterior, according to one embodiment of the present disclosure.

[0031] [Figure 8] FIG. 8 is a diagram showing a control module for controlling the above system. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0032] Although the following detailed description contains many specific details for purposes of illustration, those skilled in the art will appreciate that many variations and modifications to the following details are within the scope of the present disclosure. Accordingly, the aspects of the present disclosure described below are set forth without loss of generality and without imposing limitations on the claims that follow this description.

[0033] Generally speaking, various embodiments of the present disclosure describe systems and methods that provide a leveled distribution of RF power to multiple stations. In particular, a plasma enhanced chemical vapor deposition (PECVD) multi-station plasma module uses RF energy to deposit or etch a film on a wafer (e.g., a 300 mm wafer, etc.). Each station is supplied with either high frequency only, a combination of high frequency and low to mid frequency energy, or a combination thereof. Due to the nature of the plasma, its impedance is dynamic, so that the RF power to the stations must be actively adjusted to level the RF power supplied to the plasma. That is, the impedance of the plasma (which acts as a load) affects the delivery of RF power. In an embodiment, a modular remote control calibration (MRCC) system achieves the leveled distribution of RF power to each of the stations in the multi-station plasma system.

[0034] Advantages of the RF power supply system of the present disclosure include a modular approach to supplying and regulating RF power to each station of a multi-station processing system. Splitting the input RF power from an RF power source to supply multiple stations does not result in leveled power because the impedance of the plasma at a particular station is constantly changing. By providing RF power regulation capability at each station (e.g., via the MRCC circuit / module of the embodiments), the power supply can be increased or decreased as needed. In this manner, individual control of power and / or voltage to each station is provided. In addition, the embodiments of the present disclosure provide isolation of RF power regulation when regulating either the LF / MF or HF frequencies. In particular, the MRCC module uses two parallel circuits, one for low to mid frequency regulation and one for high frequency regulation, to vary the impedance of the load (e.g., plasma). These parallel circuits are designed such that adjusting one frequency does not affect the other frequency. Additionally, the embodiments of the present disclosure use absolute encoders to track the position of each capacitor. In that way, the capacitor position information is not lost. Additionally, embodiments of the present disclosure use a clamshell design of the MRCC module that allows assemblers to access the internal components on three sides of the module, which reduces assembly time and build costs. Additionally, embodiments of the present disclosure use a floating motor mount to combat axial misalignment between the capacitors and the actuators that rotate the capacitors, which prevents the capacitors from burning out due to misalignment.

[0035] With the above general understanding of the various embodiments, illustrative details of the embodiments will be described with reference to the various drawings. Elements and / or components that are similarly numbered in one or more drawings are generally intended to have the same configuration and / or function. Furthermore, the drawings may not be drawn to scale, but are intended to explain and emphasize novel concepts. It will be apparent that the present embodiments may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail in order not to unnecessarily obscure the present embodiments.

[0036] SUMMARY OF THE DISCLOSURE Embodiments of the present disclosure relate to power supplies in plasma process modules, such as those used in plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD) processes. Embodiments of the present disclosure may be implemented in a variety of process module configurations. Furthermore, embodiments of the present disclosure are not limited to the examples provided herein and may be implemented in different plasma processing systems (e.g., inductively coupled systems, capacitively coupled systems, electron cyclotron resonance systems, microwave systems, etc.) that apply different configurations, geometries, and plasma generation techniques. Examples of plasma processing systems and plasma processing modules are disclosed in commonly owned U.S. Patent Nos. 8,862,855, 8,847,495, 8,485,128, and U.S. Patent Application No. 15 / 369,110.

[0037] FIG. 1A illustrates a reactor system 100A that may be used to deposit a film on a substrate, such as one formed by a CVD (e.g., PECVD) or atomic layer deposition (ALD) process. The deposition of the film is preferably performed in a PECVD system. As shown in the configuration of FIG. 1A, RF power is provided to a pedestal 140, but in other embodiments, power may be provided in other ways, such as through a showerhead. These reactors may utilize two or more heaters, and in this exemplary reactor, a common terminal configuration may be used to control the temperature for uniformity or custom settings. More specifically, FIG. 1A illustrates a substrate processing system 100A used to process a wafer 101. The system includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. A central support is configured to support a pedestal 140, which in one embodiment is a powered electrode. The pedestal 140 is electrically coupled to an RF power source 104 via a match network 106. The power supplies are controlled by a control module 110, e.g., a controller. The control module 110 is configured to operate the substrate processing system 100A by executing process inputs and controls 108. The process inputs and controls 108 may include a process recipe, such as power levels, timing parameters, process gases, mechanical movement of the wafer 101, etc., to, e.g., deposit or form a film on the wafer 101.

[0038] The substrate processing system 100A may include multiple processing stations. For example, the chamber 102 may include multiple processing stations, each station having a pedestal that supports the wafer 101. The RF power and frequency provided by the matching network 106 is split and distributed by a distribution system 420. To regulate the amount of RF power provided to each station, one or more MRCC tuners 415 are provided in a one-to-one relationship between the MRCC tuners 415 and the stations. For example, the one or more MRCC tuners 415 may be configured in one embodiment to provide equalized adjustments between each station such that each station receives an equal amount of RF power. In another embodiment, the one or more MRCC tuners 415 may be configured to provide a desired RF power to each of the stations, where the power provided to each of the stations is not necessarily equal.

[0039] One method involves calibrating the system with known good components and systems. Using voltage probes (e.g., VI probe 417), feedback is sent back to the corresponding MRCC tuner (e.g., tuner 415) to determine how to adjust the RF power delivery to the corresponding station. For example, one VI probe 417 is used to determine the current and voltage of the corresponding station. In this way, during operation, the VI probe 107 can measure voltage variations due to changes in the impedance of the plasma, and the RF power can be actively adjusted to achieve the desired delivery of RF power to the station during processing.

[0040] The central support also includes lift pins (not shown), each of which is actuated by a corresponding lift pin actuation ring 120 as controlled by a lift pin control 122. The lift pins are used to lift the wafer 101 from the pedestal 140 to allow an end effector to pick up the wafer and to lower the wafer 101 after it has been placed by the end effector. The substrate processing system 100A further includes a gas supply manifold 112 connected to a process gas 114, e.g., a gas chemical supply from the facility. Depending on the process to be performed, the control module 110 controls the supply of the process gas 114 via the gas supply manifold 112. The selected gas is then flowed into the showerhead 150 and distributed to a volume of space defined between the face of the showerhead 150 facing the wafer 101 and the wafer 101 resting on the pedestal 140. In an ALD process, the gas may be a reactant selected for absorption or reaction with an absorbed reactant.

[0041] Additionally, the gases may or may not be premixed. Appropriate valves and mass flow control mechanisms may be applied to ensure that the correct gases are delivered during the deposition and plasma treatment stages of the process. The process gases exit the chamber through an outlet. A vacuum pump (e.g., a one or two stage mechanical dry pump and / or a turbomolecular pump) draws the process gases and maintains an appropriately low pressure in the reactor through a closed loop controlled flow restriction device, such as a throttle valve or pendulum valve.

[0042] Also shown is a carrier ring 200 that surrounds an outer region of the pedestal 140. The carrier ring 200 is configured to sit on a carrier ring support area that is stepped down from the wafer support area at the center of the pedestal 140. The carrier ring includes an outer edge side of its disk structure, e.g., an outer radius, and a wafer edge side of its disk structure, e.g., an inner radius, that is closest to where the wafer 101 is located. The wafer edge side of the carrier ring includes a number of contact support structures that are configured to lift the wafer 101 when the carrier ring 200 is lifted by the spider forks 180. Thus, the carrier ring 200, along with the wafer 101, is lifted and rotated, e.g., to another station in a multi-station system. In other embodiments, the chamber is a single station chamber.

[0043] 1B illustrates a substrate processing system 100B showing application of RF power to a showerhead used to process a wafer, e.g., to form a film thereon, according to one embodiment of the present disclosure. The reactor system 100B may be used to deposit a film on a substrate, such as one formed in a CVD (e.g., PECVD) or atomic layer deposition (ALD) process. As shown in the configuration of FIG. 1B, RF power is supplied to the showerhead 150, although in other embodiments, power may be supplied in other manners, such as via a pedestal 140 as in FIG. 1A.

[0044] Substrate processing system 100B is similar to system 100A, except for the location of the RF power supply. Like numbered elements perform like functions and have like configurations. For example, system 100B includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. The central support is configured to support a pedestal 140, which in one embodiment is a grounded electrode.

[0045] The showerhead 150 is electrically coupled to a power source (e.g., one or more RF power generators 50) via an RF match network 106. The power source is controlled by a control module 110, e.g., a controller. The control module 110 is configured to operate the substrate processing system 100A by executing the process inputs and controls 108, as previously described. Depending on the process to be performed, the control module 110 controls the supply of process gases 114 via a gas supply manifold 112. The selected gas is then flowed into the showerhead 150 and distributed to a spatial volume defined between the showerhead face facing the wafer 101 and the wafer resting on the pedestal 140.

[0046] The substrate processing system 100B may include multiple processing stations. For example, the chamber 102 may include multiple processing stations, each having a pedestal for supporting the wafer 101. The RF match network 106 may be coupled to an RF distribution system 420 that provides power to the system 100B. For example, the RF power and frequency provided by the match network 106 may be split and distributed by the distribution system 420 to each of the stations. The RF power provided to the stations also passes through a VI probe 417 that senses the showerhead voltage during operation. In that way, the RF power may be adjusted at each station for a leveled power supply or for a desired power supply.

[0047] To regulate the amount of RF power provided to each station, one or more MRCC tuners 415 are provided in a one-to-one relationship between the MRCC tuners 415 and the stations. For example, the one or more MRCC tuners 415 can be configured in one embodiment to provide equalized regulation between each of the stations such that each station receives an equal amount of RF power. In another embodiment, the one or more MRCC tuners 415 can be configured to provide a desired RF power to each of the stations, where the power provided to each of the stations need not necessarily be equal.

[0048] 2 shows a top view of a multi-station processing tool in which four processing stations are provided. The top view is of the lower chamber portion 102b (with the upper chamber portion 102a removed, for example, for illustration purposes), and the four stations are accessed by spider forks 226. Each spider fork, or fork, includes a first and a second arm, each of the arms being disposed around a portion of each side of the pedestal 140. In this view, the spider forks 226 are drawn with dashed lines to convey that they are below the carrier ring 200. The spider forks 226 using the engagement and rotation mechanism 220 are configured to simultaneously raise and lift the carrier ring 200 out of the stations (i.e., from the underside of the carrier ring 200), and then rotate at least one or more stations before lowering the carrier ring 200 (where at least one of the carrier rings supports a wafer 101) to a next position, so that further plasma processing, treatment, and / or film deposition can occur on the respective wafer 101.

[0049] 3 shows a schematic diagram of an embodiment of a multi-station processing tool 300 with an inbound load lock 302 and an outbound load lock 304. At atmospheric pressure, a robot 306 is configured to move a substrate from a cassette loaded via a pod 308 to the inbound load lock 302 via an atmospheric port 310. The inbound load lock 302 is coupled to a vacuum source (not shown) so that the inbound load lock 302 may be pumped down when the atmospheric port 310 is closed. The inbound load lock 302 also includes a chamber transport port 316 that interfaces with the processing chamber 102b. Thus, when the chamber transport 316 is opened, another robot (not shown) may move the substrate from the inbound load lock 302 to the pedestal 140 of the first process station for processing.

[0050] The illustrated processing chamber 102b includes four process stations, numbered 1 through 4 in the embodiment shown in Figure 3. In some embodiments, the processing chamber 102b may be configured to maintain a low pressure environment such that substrates may be transferred between the process stations using the carrier ring 200 without vacuum breaking and / or air exposure. Each process station shown in Figure 3 includes a process station substrate holder (shown at 318 for station 1) and a process gas supply line inlet.

[0051] 3 also shows spider forks 226 for transferring substrates within the processing chamber 102b. The spider forks 226 rotate to allow transfer of the wafer from one station to another. Transfer occurs by allowing the spider forks 226 to lift the carrier ring 200 from the outer underside, thereby lifting the wafer and rotating both the wafer and carrier to the next station. In one configuration, the spider forks 226 are made from a ceramic material to withstand the high levels of heat during processing.

[0052] 4A illustrates an exemplary multi-station plasma system 400A (e.g., a chemical vapor deposition system) configured for desired distribution (e.g., auto-leveling, weighted distribution, etc.) of RF power to multiple stations in accordance with one embodiment of the present disclosure. PECVD multi-station plasma systems use RF energy to deposit or etch films on one or more wafers.

[0053] For example, the multi-station plasma system 400A provides active adjustment of RF power at each station to equalize distribution between the plasma reactors (known to be dynamic) at each station. As shown, the multi-station plasma system 400 includes an RF generation system including an HF generator 401 for generating high frequency RF power and an LF / MF generator 405 for generating low to medium frequency RF power. The high frequency power operates at high frequencies (e.g., about 13.56 MHz, in the range of 10-20 MHz, in the range of 5-50 MHz, in the range of 5-100 MHz). The low frequency power operates at low frequencies (e.g., in the range of 360 kHz to 440 kHz, in the range of 200 kHz to 700 kHz, and in the range of 100 kHz to 900 kHz). The mid-frequency power operates at mid-frequency (e.g., in the range of 200 kHz to 500 kHz, 400 kHz to 800 kHz, 500 kHz to 1 MHz, 800 kHz to 2 MHz, and 1.5 MHz to 3.5 MHz). Each generator is divided into multiple distribution channels, each channel providing power to a plasma reactor (e.g., a station). The power consumption at each station varies depending on the state of each reactor (e.g., plasma impedance, which is dynamic). For example, high frequency RF generator 401 is connected to matching network 402. The power and frequency provided by matching network 402 is provided to split input radio frequency (SIRF) distribution system 410. Also, low to mid frequency RF generator 405 is connected to matching network 406. The power and frequency provided by matching network 406 is provided to SIRF distribution system 410.

[0054] The SIRF distribution system 410 divides and distributes each of the high frequency RF power and the low to mid frequency RF power to the channels (e.g., 1 to N channels). Each station is sourced with either high frequency RF power only, low to mid frequency RF power only, or a combination of high frequency RF power and low to mid frequency RF power. In one embodiment, the RF power output of the SIRF distribution system 410 is distributed equally to each of the channels.

[0055] As shown in FIG. 4A, each channel provides power to a capacitively coupled plasma (CCP) reactor. For example, a first channel provides power to a reactor surrounding pedestal 425-1 of station 1, a second channel provides power to a reactor surrounding pedestal 425-2 of station 2, and an Nth channel provides power to a reactor surrounding pedestal 425-N of station N. The power consumption varies depending on the state of the reactor of the corresponding station. Since CCP reactors are known to be dynamic, embodiments of the present disclosure provide active adjustment of RF power to each station to equalize the distribution among the reactors or to provide a desired power level to each station. In particular, each channel includes an MRCC channel configured to adjust the RF power supplied to the corresponding station via the corresponding channel. Additionally, each channel includes a VI probe 417 for measuring the voltage of the RF power supplied to the corresponding station. The voltage may be used as feedback to determine the appropriate voltage and / or power supplied to the station. That is, in one embodiment, by connecting the MRCC tuners to corresponding VI probes, and with sufficient logic, multi-station RF auto-matching may be performed to actively equalize station power. Also, instead of equalized distribution, desired and / or calibrated imbalance may be achieved. For example, in a first channel, the VI probe 417A is configured to measure the RF power supplied by the MRCC tuner 415A to station 1, in a second channel, the VI probe 417B is configured to measure the RF power supplied by the MRCC tuner 415B to station 2, and in an Nth channel, the VI probe 417N is configured to measure the RF power supplied by the MRCC tuner 415N to station N.

[0056] As shown in FIG. 4A, each station is comprised of one or more filter boxes. In general, the power supplies that provide alternating current (AC) or direct current (DC) power through the central post of the pedestal to various components (e.g., heaters and controllers that receive voltage signals from thermocouples to measure the heater temperature, etc.) are protected from RF power also provided through the central post by using filter boxes (e.g., RF filters) at points before and after the channel portions that combine RF power (low to mid and / or high frequencies) with the AC or DC power. For example, if high frequency RF power is provided to a station (e.g., provided to a chuck through the central post of the pedestal), a high frequency filter box 430 is also provided to isolate the high frequency RF power from any other electrical circuitry that is also present in the central post. For example, a heating element in the chuck of the pedestal may be controlled using AC or DC path lines that also pass through the central post of the pedestal. In this manner, the high frequency filter box 430 isolates the AC path lines from the high frequency RF power provided through the central post. Similarly, low to mid frequency filter box 435 isolates the AC path lines from the low to mid frequency RF power provided through the center post. More specifically, high frequency filter box 430A isolates high frequency RF power, low to mid frequency filter box 435A isolates low to mid frequency RF power provided to station 1, high frequency filter box 430B isolates high frequency RF power, low to mid frequency filter box 435B isolates low to mid frequency RF power provided to station 2, ...high frequency filter box 430N isolates high frequency RF power, and low to mid frequency filter box 435N isolates low to mid frequency RF power provided to station N.

[0057] 4B shows a block diagram of an RF power system 400B configured for distribution of RF power, or automatic leveling of a desired or weighted distribution of RF power, to a quad station module (QSM) plasma processing system using one or more MRCC systems, according to one embodiment. System 400B can be implemented within multi-station plasma system 400A of FIG. 4A.

[0058] Multiple power generators are provided. For example, an RF dual source power generator may include a low to mid frequency RF power generator 405 providing LF / HF power and a high frequency RF power generator 401 providing HF power at high frequency.

[0059] Additionally, split input RF (SIRF) distribution box 420 is configured to receive LF / MF power from low to mid frequency RF power generator 405 and HF power from high frequency RF power generator 401. SIRF distribution box 420 is further configured to combine and distribute at least one of the LF / MF power and HF power as one or more split RF outputs, each of which is provided as a corresponding split RF input to a corresponding MRCC module 415. For example, SIRF distribution box 420 provides RF output 1 (455A) to MRCC tuner 415A providing regulated RF power to station 1, RF output 2 (455B) to MRCC tuner 415B providing regulated RF power to station 2, RF output 3 (455C) to MRCC tuner 415C providing regulated RF power to station 3, and RF output 4 (455D) to MRCC tuner 415D providing regulated RF power to station 4.

[0060] Thus, the four MRCC tuners of RF power system 400B provide RF power (e.g., RF output) from SIRF distribution box 420 as an internal RF input such that each MRCC tuner 415 has an RF input and an RF output. That is, each MRCC tuner has an RF input connected to the SIRF RF output of the corresponding station. Also, each MRCC tuner has one RF output provided to the station, either the pedestal or the showerhead. For example, MRCC tuner 415A provides regulated RF power 1 to the pedestal or showerhead 420A of station 1, MRCC tuner 415B provides regulated RF power 2 to the pedestal or showerhead 420B of station 2, MRCC tuner 415C provides regulated RF power 3 to the pedestal or showerhead 420C of station 3, and MRCC tuner 415D provides regulated RF power 4 to the pedestal or showerhead 420D of station 4. In one embodiment, the RF power supplied to each station is leveled and / or approximately equal. In another embodiment, the RF power supplied to each station is not leveled according to a desired distribution.

[0061] Additionally, the MRCC controller 450 controls the operation of each of the MRCC tuners 415A-415D (e.g., providing settings for leveled distribution, manual distribution, as described distribution, etc.). For example, the MRCC controller 450 may provide control signals to adjust the values ​​of corresponding variable capacitors, which in turn can adjust the RF power output of the corresponding MRCC tuner.

[0062] In particular, each MRCC tuner 415 includes an RF circuit having two parallel circuit paths, as described in FIG. 5A below. Each parallel circuit path includes a series resonant circuit with a resonance above the fundamental operating frequency of either LF / MF or HF. Furthermore, both parallel circuits are designed to adjust either the LF / MF or HF power by adjusting the value of a variable capacitor, respectively. The power response to the adjustment depends on the station's plasma load impedance.

[0063] FIG. 5A is an MRCC circuit diagram 500A configured for automatic adjustment of RF power, where the MRCC circuit includes a low-to-mid frequency adjustment circuit and a high frequency adjustment circuit, according to one embodiment of the present disclosure. The MRCC circuit diagram 500 has a wide capacitance range that provides a wide adjustment range with minimal high frequency and low-to-mid frequency crosstalk. As shown, the MRCC circuit 500A includes an LF / MF adjustment circuit 701 coupled in parallel to an HF adjustment circuit 702 between ground and a corresponding common node 510 configured to provide a corresponding split RF input (e.g., receiving a split RF output output from the SIRF distribution box 420 provided internally as an RF input). The parallel circuit, when adjusted, changes the impedance of the load. In particular, inserting the MRCC circuit diagram 500A into the RF path disturbs the load by increasing or decreasing the energy and / or power going to the corresponding station. Furthermore, the LF / MF adjustment circuit 701 and the HF adjustment circuit 702 are designed such that when one is adjusted, the other circuit is not affected.

[0064] LF / MF tuning circuit 701 includes a variable LF / MF capacitor 530 coupled in series with LF / MF inductor 520. The LF / MF tuning circuit is coupled between ground and a corresponding common node 510. In one embodiment, the resonance of LF / MF tuning circuit 701 is above the fundamental frequency of operation (the LF / MF frequency). In one embodiment, variable LF / MF capacitor 530 has a value between 5 and 700 picofarads (pf), although in other embodiments the value may exceed this range. In one embodiment, variable LF / MF capacitor 530 has a value between 15 and 650 picofarads (pf), although in other embodiments the value may exceed this range. In one embodiment, variable LF / MF capacitor 530 has a value between 100 and 400 picofarads (pf), although in other embodiments the value may exceed this range. In one embodiment, variable LF / MF capacitor 530 has a value between 200 and 300 picofarads (pf), although in other embodiments the value may exceed this range. LF / MF adjustment circuit 701 is adjusted and / or tuned by varying the value of LF / MF capacitor 530. In this manner, LF / MF power is adjusted by adjusting the value of variable LF / MF capacitor 530. In one embodiment, LF / MF inductor 520 has a value found in the range between 10 and 40 microhenries (uH). In one embodiment, LF / MF inductor 520 has a value of 24 microhenries (uH), although in other embodiments the value may vary.

[0065] The HF tuning circuit 702 includes a variable HF capacitor 535 coupled in series with the HF inductor 525. The HF tuning circuit 702 is coupled between ground and a corresponding common node. In one embodiment, the resonance of the HF tuning circuit 702 is above the fundamental frequency of operation (the HF frequency). In one embodiment, the variable HF capacitor 535 has a value between 2 and 75 picofarads (pf), although in other embodiments the value may exceed this range. In one embodiment, the variable HF capacitor 535 has a value between 5 and 50 picofarads (pf), although in other embodiments the value may exceed this range. In one embodiment, the variable HF capacitor 535 has a value between 10 and 30 picofarads (pf), although in other embodiments the value may exceed this range. In one embodiment, the variable HF capacitor 535 has a value between 15 and 25 picofarads (pf), although in other embodiments the value may exceed this range. The HF tuning circuit 702 is adjusted and / or tuned by varying the value of the HF capacitor 535. Thus, the HF power is adjusted by adjusting the value of the variable HF capacitor 535. In one embodiment, the HF inductor 525 has a value found in the range of 3 to 30 microhenries (uH). In one embodiment, the HF inductor 525 has a value found in the range between 5 to 25 microhenries (uH). In one embodiment, the HF inductor 525 has a value of 16 microhenries (uH), although in other embodiments, this value may be different. In one embodiment, the value of the HF inductor 525 is less than the value of the LF / MF inductor 520.

[0066] As previously described, LF / MF tuning circuit 701 is adjusted and / or tuned by changing the value of LF / MF capacitor 530, and HF tuning circuit 702 is adjusted and / or tuned by changing the value of HF capacitor 535. The required values ​​of LF / MF capacitor 530 and high frequency capacitor 535 depend on the process conditions in the reactor. For example, adjustment of LF / MF tuning circuit 701 and / or HF tuning circuit 702 provides an adjustment of the voltage presented to the corresponding reactor and / or an adjustment of the power delivered to the corresponding reactor. Specifically, MRCC schematic 500A uses multiple parallel circuits (e.g., LF / MF tuning circuit 701 and HF tuning circuit 702) as phase shifters to provide impedance changes for a particular source frequency. In this manner, as the impedance changes, the power delivered to a particular load (station) changes. That way, as the load changes (e.g., as the plasma dynamically changes its impedance during processing), the MRCC circuit is configured to automatically adjust the impedance to provide the appropriate power (e.g., leveled power, required power, etc.) to the load. Furthermore, in embodiments, the values ​​of the LF / MF capacitor 530 and the HF capacitor 535 are synchronized with changing process conditions, either through a single adjustment for the entire processing sequence or through adjustments at multiple critical steps within the processing sequence.

[0067] After adjusting the MRCC circuit diagram 500A, the corresponding common node 510 is configured to provide a corresponding RF output to the corresponding station, i.e., the RF input is adjusted and provided as an RF output to the corresponding station.

[0068] In an embodiment, the LF / MF tuning circuit 701 and the HF tuning circuit 702 are designed with isolation to avoid interference between their respective source frequencies. In addition, these circuits avoid resonance in the entire tuning range and prevent a sudden increase in current to one station. Below is the impedance equation for the MRCC circuit diagram 500A:

number

[0069] FIG. 5A-1 illustrates cross-parallel isolation between the LF / MF tuning circuit and the HF tuning circuit of the MRCC diagram of FIG. 5A according to one embodiment of the disclosure. In particular, when the variable LF / MF capacitor is adjusted, the HF tuning circuit is isolated from the LF / MF tuning circuit. Also, when the variable HF capacitor is adjusted, the LF / MF tuning circuit is isolated from the HF tuning circuit. Specifically, when the variable LF / MF capacitor or the variable HF capacitor is adjusted, cross-parallel isolation occurs between the LF / MF inductor of the LF / MF tuning circuit and the HF inductor of the HF tuning circuit. As shown, when the LF / MF capacitor 530 is adjusted, the HF inductor 525 in the parallel circuit of the HF tuning circuit 702 operates to present a high impedance, thereby isolating the HF tuning circuit 702 when the LF / MF tuning circuit 701 (e.g., LF / MF capacitor 530) is adjusted. Also, when HF capacitor 535 is adjusted, LF / MF inductor 520 in the parallel circuit of LF / MF tuning circuit 701 operates to present a high impedance, thereby isolating LF / MF tuning circuit 701 when HF tuning circuit 702 (e.g., HF capacitor 535) is adjusted. That is, each of the low to mid frequency inductors and the high frequency inductor provide cross-parallel isolation when adjusting capacitors on opposite sides, i.e., opposite sides of the cross-tuned circuit.

[0070] 5B and 5C show an example of adjusting power using an MRCC circuit diagram 500A with 1 KW input power (e.g., internal RF input). As described, the power is adjusted by varying one or more of the LF / MF capacitor 530 and the HF capacitor 535. In FIG. 5B and 5C, the values ​​of the LF / MF capacitor 530 and the HF capacitor 535 are expressed as a range percentage of the total value available for capacitance. In particular, FIG. 5B and 5C show simulation results using 13.56 MHz for high frequency and 400 kHz for low to mid frequency with 1 kW input power. As shown, FIG. 5B and 5C show the tunability and isolation between the circuits of each frequency.

[0071] In particular, FIG. 5B illustrates a three-dimensional (3D) graph 500B illustrating the adjustment of RF power using an MRCC circuit by adjusting a capacitor of a low-to-mid frequency adjustment circuit (e.g., LF / MF capacitor 530 of LF / MF adjustment circuit 701) independent of the value of a capacitor of a high frequency adjustment circuit (e.g., HF capacitor 535 of HF adjustment circuit 702) of an MRCC circuit configured for distribution of RF power to multiple stations or automatic leveling of a desired distribution of RF power according to one embodiment of the present disclosure. Graph 500B includes a Z-axis 541 illustrating power, an X-axis 542 illustrating the value of LF / MF capacitor 530, and a Y-axis 543 illustrating the value of HF capacitor 535. In particular, isolation between LF / MF adjustment circuit 701 and HF adjustment circuit 702 is achieved when adjusting MRCC circuit schematic 500A. In one embodiment, HF adjustment circuit 702 is isolated from LF / MF adjustment circuit 701 when adjusting variable LF / MF capacitor 530. For example, if the corresponding split RF input has a low to mid frequency content (e.g., low to mid frequency of 400 kHz), then when adjusting variable LF / MF capacitor 530, HF inductor 525 presents a high impedance to the corresponding split RF input, effectively isolating HF tuning circuit 702 from LF / MF tuning circuit 701. As shown, for a particular value of LF / MF capacitor 530, the power level is constant regardless of the value of HF capacitor 543. That is, HF capacitor 543 may vary in value for a particular value of LF / MF capacitor 530, but the power level is constant.

[0072] FIG. 5C shows a 3D graph 500C illustrating RF power regulation using an MRCC circuit by adjusting a capacitor in a high frequency regulation circuit independent of the values ​​of the capacitors in the low to mid frequency regulation circuits of an MRCC circuit configured for automatic leveling of distribution of RF power to multiple stations according to one embodiment of the disclosure. Graph 500C includes the same axes as graph 500B of FIG. 5B, including a Z-axis 541 showing power, an X-axis 542 showing the value of LF / MF capacitor 530, and a Y-axis 543 showing the value of HF capacitor 535. In particular, isolation between LF / MF regulation circuit 701 and HF regulation circuit 702 is achieved when, for example, adjusting MRCC circuit schematic 500A. In one embodiment, LF / MF regulation circuit 701 is isolated from HF regulation circuit 702 when adjusting variable HF capacitor 535. For example, if the corresponding split RF input has a high frequency content (e.g., a high frequency of 13.56 MHz), LF / MF inductor 520 presents a high impedance to the corresponding split RF input and effectively isolates LF / MF tuning circuit 701 from HF tuning circuit 702 when adjusting variable HF capacitor 535. As shown, for a particular value of HF capacitor 535, the power level is constant regardless of the value of LF / MF capacitor 530. That is, LF / MF capacitor 530 may vary in value for a particular value of HF capacitor 535, but the power level is constant.

[0073] 5D-5F show, in one embodiment, a recipe control calibration circuit 500D configured to calibrate low frequency RF power and / or high frequency RF power and simulation results showing the power response when adjusting a capacitor in the calibration circuit 500D.

[0074] In particular, Figure 5D illustrates a recipe control calibration circuit 500D including series elements for splitting RF power delivered to multiple stations according to one embodiment of the disclosure. Circuit 500D includes node 1 for receiving low frequency RF_IN. Node 1 is coupled to LF inductor 501, which is coupled in parallel to variable LF capacitor (LF Cap) 502, both of which are coupled to node 2. Node 2 is coupled in parallel to low frequency capacitors 503, 504. The parallel circuit includes low frequency inductor 505, capacitor 506, capacitor 507, and capacitor 508, all of which are coupled in parallel between node 1 and node 2. Capacitor 516 is configured to receive high frequency RF_IN and is coupled between node 1 and node 4. Variable HF capacitor (HF Cap) 515 is coupled between node 2 and ground. Inductor 517 is coupled between node 1 and node 5 and provides RF_OUT.

[0075] Also, Figures 5E and 5F show simulations that suggest that recipe-controlled calibration circuit 500D is not completely isolated. In particular, Figure 5E shows a 3D graph showing the adjustment of RF power using the recipe-controlled calibration system of Figure 5D showing the effect of adjusting the low-frequency adjustment circuit when adjusting the low-frequency adjustment circuit, according to one embodiment of the present disclosure. For example, in Figure 5E, when the low-frequency component (e.g., capacitor) of circuit 500D is adjusted, at a particular value of the low-frequency capacitor, the power changes depending on the value of the high-frequency capacitor. That is, the low-frequency component and the high-frequency component affect each other and are not isolated. Similarly, Figure 5F shows a 3D graph showing the adjustment of RF power using the recipe-controlled calibration system of Figure 5D showing the effect of adjusting the high-frequency adjustment circuit when adjusting the high-frequency adjustment circuit, according to one embodiment of the present disclosure. In Figure 5F, when the high-frequency component (e.g., capacitor) of circuit 500D is adjusted, at a particular value of the high-frequency capacitor, the power changes depending on the value of the low-frequency capacitor. Thus, again, the low and high frequency components affect each other and are not isolated. Thus, circuit 500A of Figure 5A provides an improvement over circuit 500D of Figure 5D, since the low to mid frequency components and the high frequency components are isolated from each other when operating at their respective frequencies.

[0076] FIG. 6 is a perspective view of a system 600 configured for automatic leveling of RF power delivery to multiple stations using one or more MRCC adjustment systems, according to one embodiment of the disclosure. As shown, the system 600 includes a quad set of MRCC tuner modules required to support a quad station module tool. That is, the quad set includes four individual MRCC tuners, including MRCC tuners 415A-415D, each MRCC tuner configured to control the power delivery to a corresponding station. Each MRCC tuner is similarly configured, and the discussion of MRCC tuner 415A provided below is representative of all MRCC tuners. In particular, FIG. 7A provides a perspective and open view of an MRCC tuner 415 (e.g., 415A) configured to deliver leveled and / or desired power to a corresponding station.

[0077] In one embodiment, the system 600 exhibits a symmetrical design that is forward compatible with future symmetrical low-to-mid frequency RF systems, thus improving inherent station leveling performance. In particular, the four MRCC conditioning systems 415A-415D are symmetrically arranged around the central opening 690. In one embodiment, the symmetrically arranged MRCC conditioning systems 415A-415D are configured below a quad station processing system (e.g., the system shown in Figures 2-3) to provide power to one or more pedestals. In another embodiment, the symmetrically arranged MRCC conditioning systems 415A-415D are configured above a quad station processing system (e.g., the system shown in Figures 2-3) to provide power to one or more showerheads.

[0078] Each MRCC tuner 415 includes an LF / MF tuning circuit 701 and an HF tuning circuit 702, as described above. For example, the LF / MF tuning circuit includes an LF / MF inductor 520 and an LF / MF capacitor, and the LF / MF tuning circuit is tuned by adjusting a corresponding LF / MF capacitor 530. Also, the HF tuning circuit includes an HF inductor 525 and an HF capacitor 535, and the HF tuning circuit is tuned by adjusting HF capacitor 535.

[0079] Each of the MRCC tuners is similarly configured. For example, MRCC tuner 415A includes a fan 630 for providing cooling for components within the MRCC tuner. In addition, each adjustment circuit within MRCC tuner 415 includes an actuator 610 configured to adjust a corresponding variable capacitor and an encoder 620 for measuring a value of the variable capacitor. The actuator is configured to change the value of the corresponding capacitor. For example, the actuator may be a motor (e.g., a stepper, a servo, etc.) that is controlled to change the value of the variable capacitor. For example, LF / MF adjustment circuit 701 is coupled to actuator 610A and encoder 620A. Similarly, HF adjustment circuit 702 is coupled to actuator 610B and encoder 620B.

[0080] Because of their similar configuration, the MRCC tuners can be used in a modular manner, with one MRCC tuner 415 associated with one station. Modularity is implemented by providing MRCC tuners 415 that can be physically isolated from, but mounted on, existing split-input RF (SIRF) distribution boxes. In particular, each MRCC tuner 415 can be located near the reactor, or near the source, or anywhere on the path of the RF for that matter. In this manner, by inserting an MRCC tuner 415 into the RF path, the load is prevented from increasing or decreasing the energy destined for a particular station (e.g., changed).

[0081] In one embodiment, the MRCC tuner 415A uses an absolute encoder 620 to track the position of each corresponding capacitor. The position information may be provided as feedback to the controller. The absolute encoder allows for more accurate positioning and position verification, ensuring repeatable positioning and therefore repeatable station-to-station power adjustment. Previously, the encoder was not used for position verification, so internal verification of the value and position could not be performed for verification purposes.

[0082] Furthermore, when using absolute encoders, the position information determined by the corresponding encoder is not lost. This means that with absolute encoders, the position can be known across a power cycle without having to reset the position using homing, limit switches, or hard stop search routines. For example, the mechanical end limits and midpoints of a variable capacitor can be determined and learned by an absolute encoder. This allows for more consistent process results that do not change with power cycles. Also, with absolute encoders, the corresponding capacitor only needs to be calibrated once (for example, to determine the mechanical end limits), so there is no load on the capacitor. Therefore, integrated absolute encoders can be configured to track the actual position and minimize capacitance changes to ensure that the motor knows where it is. This eliminates the need to perform high-stress homing.

[0083] In particular, the use of the absolute encoder 620 allows the ability to create an accurate profile of the corresponding capacitor. The ends of the capacitor can be found, in one embodiment, by looking at the perceived position of the motor (based on the steps / pulses sent to the motor) compared to the actual position of the motor (based on the absolute encoder) and determining the hard stop that is found when they are beyond a full step synchronization (1.8 degrees). This determined limit reduces stress on the hard stop by stopping it rather than "hammering" it. For example, a stepper motor, when it jams on something, exerts a half-sine wave force (e.g., a back electromotive force [EMF] pulse), causing a "hammer" motion. This can cause more damage if not stopped quickly. Checking for a full step (or less) of misalignment between the motor and the encoder allows the stepper motor to be stopped only during the first contact with the hard stop. The motor does not have to return to the hard stop when adjusting the capacitor thereafter. Repeatedly hitting the hard stop can significantly change the function of the capacitor and can require the system recipe to be retuned every time the power is cycled.

[0084] Specifically, finding one hard stop allows a coordinate system to be established. The health of the capacitor can also be checked by finding the other hard stop (e.g., the other end) to ensure the full range of adjustment for a given capacitor. The perceived RPM determined by finding both hard stops can be compared to the expected RPM provided by the manufacturer. If the perceived RPM does not match expectations, in embodiments, this may indicate a problem with the capacitor-to-motor slippage, a broken capacitor, an incorrect capacitor, etc. Detecting these problems prior to calibration and periodically throughout the life of the MRCC tuner provides preventative maintenance.

[0085] FIG. 7B is a perspective view of a clamshell profile 750 of an MRCC tuner 415 configured for conditioning RF power to a processing station according to one embodiment of the disclosure. The clamshell enclosure design allows an assembler access from three sides, reducing assembly time and costs, and reduces labor costs due to reduced component assembly time. For example, as shown with reference to both FIG. 7A and FIG. 7B, the clamshell enclosure 750 is mounted to a chassis 730 configured to hold at least an LF / MF conditioning circuit 701 and an HF conditioning circuit 702. The clamshell enclosure 750 is also mounted to a surface 735 that serves as a boundary between the conditioning circuitry (e.g., LF / MF conditioning circuit 701 and HF conditioning circuit 702) on one side and the motor 610 and encoder 620 on the other side.

[0086] More specifically, enclosure 780 includes a chassis or base 730, a front surface 735, and a clamshell exterior 750. Enclosure 780 is configured to enclose LF / MF tuning circuitry 701 and HF tuning circuitry 702. Clamshell exterior 750 includes a top 751 and a number of side walls. For example, clamshell exterior 750 includes side walls 752A, 752B adjacent front surface 735 and a side wall 752C opposing front surface 735 when attached. Additionally, bracket 781 is attached or coupled to front surface 735.

[0087] 7A, the MRCC tuner 415 of FIG. 7A includes one or more floating motor mounts 710 (e.g., mounts 710A and 710B) attached to a surface 735 for contacting a capacitor of the low-to-mid frequency tuning circuit 701 or the high frequency tuning circuit 702 in accordance with an embodiment of the present disclosure. For example, the floating motor mount 710A provides a floating interface between the LF / MF actuator 610A and the LF / MF capacitor 530, and the floating motor mount 710B provides a floating interface between the HF actuator 610B and the HF capacitor 535.

[0088] Illustratively, as represented by floating motor mount 710B, the top of the floating motor mount 710 is attached to extension 736B via screws 740A, 740B. Extension 736B is attached to bracket 781 attached to front surface 735. As shown in the callout, the bottom of floating motor mount 710 (represented by mount 710B) is loosely aligned with chassis 730 by inserting tabs 720A, 720B of mount 710 into slots (not shown) in chassis 730. Floating motor mount 710B is configured to counter axial misalignment between actuator / motor 610B and corresponding capacitor (HF capacitor 535). Proper alignment prevents the capacitor from burning out due to axial pressure against the bearings of the capacitor or the coupler (not shown) that couples the capacitor to the motor. Additionally, the floating motor mount 710 can replace a machined solid aluminum block used as a motor mount to align the motor and capacitor, thereby reducing cost and increasing ease of installation.

[0089] Floating motor mount 710A is configured similarly to mount 710B. In particular, floating motor mount 710A is attached to extension 736A via screws. Extension 736A is attached to bracket 781 attached to front surface 735. The bottom of floating motor mount 710A is loosely aligned with chassis 730 by inserting tabs into slots in chassis 730. Floating motor mount 710A is configured to counter axial misalignment between actuator / motor 610A and corresponding capacitor (LF / MF capacitor 530). Proper alignment prevents capacitor 530 from seizing due to axial pressure against the bearings of the capacitor or the coupler (not shown) that couples the capacitor to the motor.

[0090] 7C is a perspective view of an MRCC tuner system configured for conditioning RF power to a processing station according to one embodiment of the disclosure. The MRCC tuner system includes an LF / MF conditioning circuit 701 and an HF conditioning circuit 702 mounted on a chassis 730. A clamshell profile 750 of the MRCC tuner is transparent and shows the LF / MF capacitor 530 and the LF / MF inductor 520 of the LF / MF conditioning circuit 701, and the HF capacitor 535 and the HF inductor 525 of the HF conditioning circuit 702. The clamshell profile 750 is mounted to the chassis 730 and a surface 735, and the fan 630 is also mounted to the clamshell profile 750. The surface 735 separates and serves as a boundary between the motor 610 / encoder 620 and the corresponding conditioning circuit, as previously described. The encoder 620 returns position information to a controller that controls the motor 610 to adjust the position of the corresponding capacitor. Also, an RF output 780 is shown to provide RF power to the corresponding station.

[0091] FIG. 8 shows a control module 800 for controlling the above system. For example, the control module 800 may include a processor, a memory, and one or more interfaces. The control module 800 may be applied to control devices in the system based in part on sensed values. For example, the control module 800 may control one or more of a valve 802, a filter heater 804, a pump 806, and other devices 808 based on sensed values ​​and other control parameters. The control module 800 receives sensed values ​​only from, for example, a pressure gauge 810, a flow meter 812, a temperature sensor 814, and / or other sensors 816. The control module 800 may also be applied to control process conditions during precursor delivery and film deposition. The control module 800 typically includes one or more memory devices and one or more processors.

[0092] The control module 800 may control the precursor delivery system and deposition equipment activity. The control module 800 executes a computer program that includes a set of instructions for controlling process timing, delivery system temperature and pressure differential across filters, valve positions, mixture of gases, chamber pressure, chamber temperature, substrate temperature, RF power levels, substrate chuck or pedestal position, and other parameters of a particular process. The control module 800 may also monitor pressure differentials and automatically switch vapor precursor delivery from one or more paths to one or more other paths. In some embodiments, other computer programs stored in a memory device associated with the control module 800 may be applied.

[0093] Typically, there is a user interface associated with the control module 800. The user interface may include a display 818 (e.g., a display screen and / or graphical software display of equipment and / or process conditions) and user input devices 820, such as a pointing device, keyboard, touch screen, microphone, etc.

[0094] Computer programs for controlling the delivery of precursors, depositions, and other processes in a process sequence can be written in any conventional computer readable programming language, for example, assembly language, C, C++, Pascal, Fortran, etc. The compiled object code or script is executed by a processor to perform the tasks identified in the program.

[0095] The control module parameters relate to process conditions such as, for example, filter pressure differential, process gas composition and flow rate, temperature, pressure, plasma conditions such as RF power level and low to medium RF frequency, cooling gas pressure, and chamber wall temperature.

[0096] The system software may be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control the operation of the chamber components necessary to carry out the deposition process of the present invention. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, pressure control code, heater control code, and plasma control code.

[0097] The substrate positioning program may include program code for controlling chamber components used to load the substrate onto the pedestal or chuck and to control spacing between the substrate and other parts of the chamber, such as the gas inlets and / or the target. The process gas control program may include code for controlling gas composition and flow rates, and optionally code for flowing gas into the chamber before deposition to stabilize the pressure in the chamber. The filter monitoring program includes code for comparing the measured difference to a predetermined value and / or code for switching paths. The pressure control program may include code for controlling the pressure in the chamber, for example, by regulating a throttle valve in the exhaust system of the chamber. The heater control program may include code for controlling current to a heating unit for heating components of the precursor delivery system, the substrate, and / or other parts of the system. Alternatively, the heater control program may control the supply of a heat transfer gas, such as helium, to the substrate chuck.

[0098] Examples of sensors that may be monitored during deposition include, but are not limited to, mass flow control modules, pressure sensors such as pressure gauge 810, thermocouples located in the delivery system, pedestal or chuck, and condition sensors 920 in Figures 9A-9C. Appropriately programmed feedback and control algorithms may be used with data from these sensors to maintain desired process conditions. The foregoing describes the implementation of embodiments of the present disclosure in single or multi-chamber semiconductor processing tools.

[0099] In some implementations, the controller is part of a system, which may be part of the examples above. Such systems may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (substrate pedestals, gas flow systems, etc.). These systems may be integrated with electronics to control operations before, during, and after processing of semiconductor wafers or substrates. The electronics may be referred to as a "controller" and may control various components or subparts of the system. The controller may be programmed to control any of the processes disclosed herein, including supply of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow settings, fluid supply settings, position and operation settings, substrate transfer between tools and other transfer tools, and / or load locks connected to or in contact with a particular system, depending on the processing requirements and / or type of system.

[0100] Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers (e.g., software) that execute the program instructions. Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor substrate or for a system. The operational parameters may, in some embodiments, be part of a recipe defined by a process engineer to accomplish one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0101] The controller, in some implementations, may be part of or coupled to a computer that is integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" of all or part of a fab host computer system, which may enable remote access to the substrate processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance metrics from multiple manufacturing operations, change parameters of a current process, set processing steps according to a current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network, which may include a local network or the Internet.

[0102] The remote computer may include a user interface that allows for input or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data that specify parameters for each of the processing steps performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and operate toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes is one or more integrated circuits on the chamber that communicate with one or more remotely located integrated circuits (such as at the platform level or as part of a remote computer) that couple to control the process in the chamber.

[0103] Without being limited thereto, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or used in the creation and / or manufacturing of semiconductor wafers.

[0104] As noted above, depending on the processing step or steps being performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or the tool's location in the semiconductor manufacturing factory and / or tools used in material transport to move containers of wafers to and from load ports.

[0105] The foregoing description of the embodiments is provided for purposes of illustration and description. It is not intended to be exhaustive or to limit the disclosure. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but can be substituted, where applicable, and used in selected embodiments even if not specifically shown or described. The same may be modified in many ways. Such variations should not be considered as departures from the disclosure, and all such modifications are intended to be included within the scope of the disclosure.

[0106] Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications can be practiced within the scope of the appended claims. Thus, the present embodiments should be considered as illustrative and not restrictive, and the embodiments should not be limited to the details given herein, but may be modified within the scope and equivalents of the claims. The present invention can be realized, for example, in the following manner. Application example 1. 1. A circuit for regulating radio frequency (RF) power, comprising: a low-to-mid frequency (LF / HF) tuning circuit including a variable LF / MF capacitor coupled in series with a LF / MF inductor, the LF / HF tuning circuit being coupled between ground and a common node configured to receive an RF input; a high frequency (HF) tuning circuit coupled in parallel with the LF / MF tuning circuit between ground and the common node, the HF tuning circuit including a variable HF capacitor coupled in series with an HF inductor; A circuit in which cross-parallel isolation occurs between the LF / MF inductor of the LF / MF tuning circuit and the HF inductor of the HF tuning circuit when the variable LF / MF capacitor or the variable HF capacitor is adjusted. Application example 2. A circuit according to application example 1, wherein the RF power is provided by an RF dual source power generator that provides at least one of LF / HF power in the low to mid frequencies and HF power in the high frequencies. Application example 3. The circuit of Application Example 1, wherein when the RF power has low to mid frequency components, the HF inductor presents a high impedance to the RF input that effectively isolates the HF tuning circuit from the LF / MF tuning circuit when the variable LF / MF capacitor is adjusted. Application example 4. The circuit of Application Example 1, wherein when the RF power has high frequency components, the LF / MF inductor presents a high impedance to the RF input that effectively isolates the LF / MF tuning circuit from the HF tuning circuit when the variable HF capacitor is adjusted. Application example 5. The circuit of application example 1, wherein the common node is configured to provide a corresponding RF output to a corresponding processing station after conditioning. Application example 6. The circuit according to Application Example 1, an LF / MF actuator coupled to the variable LF / MF capacitor and configured to adjust the variable LF / MF capacitor; an LF / MF absolute encoder configured to determine a value of the variable LF / MF capacitor; an HF actuator coupled to the variable HF capacitor and configured to adjust the variable HF capacitor; an HF absolute encoder configured to determine a value of the variable HF capacitor. Application example 7. The circuit of Application Example 1, wherein the LF / MF inductor has a higher value than the HF inductor and provides isolation between the LF / MF regulating circuit and the HF regulating circuit when operating at low to medium frequencies or at high frequencies. Application example 8. 1. An apparatus for adjusting radio frequency (RF) power, comprising: a radio frequency (RF) dual source power generator including a low to mid frequency (LF / HF) power generator providing LF / MF power at low frequency (LF) to mid frequency (MF) and a high frequency (HF) power generator providing HF power at high frequency; a split-input RF (SIRF) distribution box configured to receive the LF / MF power and to receive the HF power, the SIRF distribution box further configured to combine at least one of the LF / MF power and HF power as one or more split RF inputs for distribution to corresponding MRCC circuits; one or more MRCC circuits for one or more processing stations, the one or more MRCC circuits including an LF / MF tuning circuit coupled in parallel to the HF tuning circuit between ground and a corresponding common node configured to provide a corresponding split RF input; the LF / MF adjustment circuit includes a variable LF / MF capacitor coupled in series with an LF / MF inductor, the LF / MF adjustment circuit being coupled between ground and the corresponding common node; the HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor, the HF tuning circuit being coupled between ground and the corresponding common node; the corresponding common node is configured to provide a corresponding RF power to the corresponding station after coordination; An apparatus, wherein when the variable LF / MF capacitor or the variable HF capacitor is adjusted, cross-parallel isolation occurs between the LF / MF inductor of the LF / MF tuning circuit and the HF inductor of the HF tuning circuit. Application example 9. The apparatus of application example 8, wherein when the corresponding split RF input has low to mid frequency components, the HF inductor presents a high impedance to the corresponding split RF input which effectively isolates the HF tuning circuit from the LF / MF tuning circuit when adjusting the variable LF / MF capacitor. Application example 10. The apparatus of application example 8, wherein when the corresponding split RF input has a high frequency content, the LF / MF inductor presents a high impedance to the corresponding split RF input which effectively isolates the LF / MF tuning circuit from the HF tuning circuit when adjusting the variable HF capacitor. Application example 11. The apparatus of application example 8, wherein the corresponding RF power is provided to a corresponding pedestal of the corresponding processing station. Application example 12. The apparatus of application example 8, wherein the corresponding RF power is provided to a corresponding showerhead of the corresponding processing station. Application example 13. The device of Application Example 8, a corresponding LF / MF actuator coupled to the corresponding variable LF / MF capacitor of a corresponding LF / MF adjustment circuit and configured to adjust the variable LF / MF capacitor; a corresponding LF / MF absolute encoder configured to determine a value of the corresponding variable LF / MF capacitor; a corresponding HF actuator coupled to the corresponding variable HF capacitor of a corresponding HF tuning circuit and configured to adjust the corresponding variable HF capacitor; a corresponding HF absolute encoder configured to determine a value of the corresponding variable HF capacitor. Application example 14. The apparatus of application example 8, wherein the RF power supplied to each of the processing stations is of the same value. Application example 15. 1. An assembly for use in a process chamber for depositing a film on a wafer, comprising: a radio frequency (RF) dual source power generator including a low to mid frequency (LF / HF) power generator providing LF / MF power at low frequency (LF) to mid frequency (MF) and a high frequency (HF) power generator providing HF power at high frequency; a split-input RF (SIRF) distribution box configured to receive the LF / MF power and to receive the HF power, the SIRF distribution box further configured to combine at least one of the LF / MF power and the HF power as a first split RF input, a second split RF input, a third split RF input, and a fourth split input, and distribute the combined power to corresponding MRCC circuits; a first MRCC circuit for a first processing station; a second MRCC circuit for a second processing station; a third MRCC circuit for a third processing station; a fourth MRCC circuit for a fourth processing station; Each MRCC circuit includes an LF / MF tuning circuit coupled in parallel to the HF tuning circuit between ground and a corresponding common node configured to receive a corresponding split RF input; the LF / MF adjustment circuit includes a variable LF / MF capacitor coupled in series with an LF / MF inductor, the LF / MF adjustment circuit being coupled between ground and the corresponding common node; the HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor, the HF tuning circuit being coupled between ground and the corresponding common node; the corresponding common node is configured to provide a corresponding RF power to the corresponding station after coordination; An assembly, wherein when the variable LF / MF capacitor or the variable HF capacitor is adjusted, cross-parallel isolation occurs between the LF / MF inductor of the LF / MF tuning circuit and the HF inductor of the HF tuning circuit. Application example 16. The assembly of application example 15, wherein when the corresponding split RF input has low to mid frequency components, the HF inductor presents a high impedance to the corresponding split RF input which effectively isolates the HF tuning circuit from the LF / MF tuning circuit when adjusting the variable LF / MF capacitor. Application example 17. The assembly of application example 15, wherein when the corresponding split RF input has a high frequency content, the LF / MF inductor presents a high impedance to the corresponding split RF input which effectively isolates the LF / MF tuning circuit from the HF tuning circuit when adjusting the variable HF capacitor. Application example 18. 16. The assembly of claim 15, wherein the corresponding RF power is provided to a corresponding pedestal of the corresponding processing station. Application example 19. 16. The assembly of claim 15, wherein the corresponding RF power is provided to a corresponding showerhead of the corresponding processing station. Application example 20. The assembly of application example 15, a corresponding LF / MF actuator in each MRCC circuit, coupled to the corresponding variable LF / MF capacitor of a corresponding LF / MF adjustment circuit and configured to adjust the variable LF / MF capacitor; a corresponding LF / MF absolute encoder in each MRCC circuit configured to determine a value of the corresponding variable LF / MF capacitor; a corresponding HF actuator in each MRCC circuit, coupled to the corresponding variable HF capacitor of the corresponding HF adjustment circuit and configured to adjust the corresponding variable HF capacitor; in each MRCC circuit, a corresponding HF absolute encoder configured to determine a value of the corresponding variable HF capacitor.

Claims

1. 1. A regulation system comprising: A chassis, a surface attached to the chassis and configured to be elevated from the chassis; a bracket attached to the surface and configured to extend parallel to the chassis and away from the surface; a floating motor mount coupled to the bracket, the floating motor mount having a surface exposed to and parallel to the face; a regulation circuit coupled to the floating motor mount and including a variable capacitor; an actuator attached to the surface and coupled to the adjustment circuit via the floating motor mount, the actuator configured to adjust a value of the variable capacitor; the floating motor mount is loosely coupled to the chassis; A tab on the floating motor mount is inserted into a slot on the chassis.

2. 2. The adjustment system of claim 1, further comprising: A regulation system comprising an encoder coupled to the actuator, the encoder configured to measure the value of the variable capacitor.

3. 3. The adjustment system according to claim 2, The adjustment system, wherein the encoder is an absolute encoder configured to create a precise profile of the variable capacitor.

4. 2. The adjustment system of claim 1, the tuning system comprises a low-to-mid frequency (LF / MF) tuning circuit including a variable LF / MF capacitor coupled in series with an LF / MF inductor; the variable LF / MF capacitor is the variable capacitor, The LF / MF conditioning circuit is coupled between ground and a common node.

5. 2. The adjustment system of claim 1, the regulation circuit comprises a high frequency (HF) regulation circuit including a variable HF capacitor coupled in series with an HF inductor; The variable HF capacitor is the variable capacitor, The HF conditioning circuit is coupled between ground and a common node.

6. 2. The adjustment system of claim 1, further comprising: a clamshell profile including a top, a first sidewall attached to the top and extending downwardly from the top to a first bottom, a second sidewall attached to the top and extending downwardly from the top to a second bottom, and a third sidewall attached to the top and extending downwardly from the top to a third bottom; a first opening facing the first sidewall is defined by the top, the first sidewall, the second sidewall, and the third sidewall; the clamshell profile is removably coupled to the surface at the opening and to the chassis at the first bottom of the first sidewall, the second bottom of the second sidewall, and the third bottom of the third sidewall.

7. 1. A regulation system comprising: A chassis, a surface attached to the chassis and configured to be elevated from the chassis; a bracket attached to the surface and configured to extend parallel to the chassis and away from the surface; a first floating motor mount coupled to the bracket, the first floating motor mount having a surface exposed to and parallel to the face; a first regulation circuit coupled to the first floating motor mount and including a first variable capacitor; a first actuator attached to the surface and coupled to the first adjustment circuit via the first floating motor mount, the first actuator configured to adjust a first value of the first variable capacitor, the first floating motor mount loosely coupled to the chassis, a tab of the first floating motor mount being inserted into a slot in the chassis; a second floating motor mount coupled to the bracket, the second floating motor mount having a second surface exposed to and parallel to the face; a second regulation circuit coupled to the second floating motor mount and including a second variable capacitor; a second actuator attached to the surface and coupled to the second adjustment circuit via the second floating motor mount, the second actuator configured to adjust a second value of the first variable capacitor, the second floating motor mount configured to counter axial misalignment between the second actuator and the second variable capacitor; An adjustment system comprising:

8. 8. The adjustment system of claim 7, the first regulation circuit is coupled in parallel with the second regulation circuit between ground and a common node; the first tuning circuit comprises a low-to-mid frequency (LF / MF) tuning circuit including a variable LF / MF capacitor coupled in series with an LF / MF inductor, the variable LF / MF capacitor being the first variable capacitor, the LF / MF tuning circuit being coupled between the ground and the common node; a regulation system comprising a high frequency (HF) regulation circuit including a variable HF capacitor coupled in series with an HF inductor, the variable HF capacitor being the second variable capacitor, the HF regulation circuit being coupled between the ground and the common node.

9. 9. The adjustment system according to claim 8, the first conditioning circuit and the second conditioning circuit are configured to receive an RF input including one or more of an LF / MF power component and an HF power component; when the RF input has low to mid frequency content, the HF inductor presents a high impedance to the RF input which effectively isolates the HF tuning circuit from the LF / MF tuning circuit when adjusting the variable LF / MF capacitor; A tuning system wherein, when the RF input has high frequency content, the LF / MF inductor presents a high impedance to the RF input that effectively isolates the LF / MF tuning circuit from the HF tuning circuit when adjusting the variable HF capacitor.

10. 10. The adjustment system of claim 9, The common node is configured to provide an RF output to a pedestal.

11. 10. The adjustment system of claim 9, The common node is configured to provide RF power to a showerhead.

12. The adjustment system according to claim 7, further comprising: a first encoder coupled to the first actuator and configured to measure the first value of the first variable capacitor; a second encoder coupled to the second actuator and configured to measure the second value of the second variable capacitor; An adjustment system comprising:

13. 13. The adjustment system of claim 12, The adjustment system, wherein the first encoder is an absolute encoder configured to create a precise profile of the first variable capacitor.

14. The adjustment system according to claim 7, further comprising: a clamshell profile including a top, a first sidewall attached to the top and extending downwardly from the top to a first bottom, a second sidewall attached to the top and extending downwardly from the top to a second bottom, and a third sidewall attached to the top and extending downwardly from the top to a third bottom; a first opening facing the first sidewall is defined by the top, the first sidewall, the second sidewall, and the third sidewall; the clamshell profile is removably coupled to the surface at the opening and to the chassis at the first bottom of the first sidewall, the second bottom of the second sidewall, and the third bottom of the third sidewall.

Images