Components with improved properties for wavelength broadening

Abstract

A component (10) is specified, which has a support (9) and exactly two semiconductor chips (10C) arranged side by side on the support (9), the exactly two semiconductor chips (10C) being embodied as double emitters with exactly two emitter regions (R) each or as triple emitters with exactly three emitter regions (R) each and thus different from single emitters. The emitter regions (R) of the component (10) are associated with the exactly two semiconductor chips (10C), the exactly two semiconductor chips (10C) being laser diodes each having a ridge defining an emitter region (R). The exactly two semiconductor chips (10C) are electrically contacted via the support (9).

Description

[Technical field]

[0001] The components are specified. [Background technology]

[0002] In diffractive waveguides, the bandwidth of the laser beam plays an important role: the bandwidth of a single laser is small, so optically visible artifacts form in the waveguide. These are visible and annoying to users of AR (Augmented Reality) or VR (Virtual Reality) or data glasses.

[0003] The bandwidth broadening can be adjusted by shifting the individual emitter regions of the quadruple emitter by about a few nanometers, e.g., 2.5 nm, but this method is very complex to fabricate and leads to high yield losses. Summary of the Invention

[0004] One of the aims of the present invention is to provide a component with improved properties in terms of wavelength broadening, in particular improved properties that enhance the image quality of, for example, AR glasses or VR glasses or data glasses.

[0005] This object is solved by the components according to the independent claims. Further configurations and further developments of the components are the subject of the dependent claims.

[0006] By means of a suitable chip structure, a multi-emitter, such as a quadruple emitter, can be split into smaller emitters, such as two double emitters. Compared to a multi-emitter, the distance between the emitter regions can be maintained. Splitting into two laser diodes greatly simplifies the manufacturing process, thus providing a simpler way to extend the bandwidth, especially to 10 nm, such as 10 nm ± 5 nm, 10 nm ± 3 nm, 10 nm ± 3 nm, or 10 nm ± 1 nm, to reduce optical artifacts in the waveguide.

[0007] In at least one embodiment of the component, the component has a plurality of emitter regions, in particular the emitter regions being allocated to at least two or exactly two semiconductor chips.

[0008] In at least one embodiment of the component, the component has at least two semiconductor chips. The two semiconductor chips are specifically two emitters or two laser diodes. In particular, the emitters or laser diodes are different from single emitters. The semiconductor chips can be dual emitters or triple emitters. For example, the semiconductor chips can have two or three ridges. The semiconductor chips of the component can be arranged side by side on the support. When the semiconductor chip has two ridges, it is called a dual emitter or dual emitter.

[0009] In at least one further embodiment of the component, the component has a carrier and exactly two semiconductor chips arranged side by side on the carrier. The exactly two semiconductor chips are formed as double emitters with exactly two emitter regions each or as triple emitters with exactly three emitter regions each, and thus differ from single emitters. The emitter regions of the component, for example all emitter regions, are assigned to exactly two semiconductor chips. The exactly two semiconductor chips are laser diodes, each having a ridge, which defines an emitter region. The exactly two semiconductor chips are electrically contacted via the carrier.

[0010] In particular, the emitter region is defined by a so-called ridge region or ridge. A component or semiconductor chip having such a ridge region is also called a ridge laser or stripe laser. Such a component or semiconductor chip may have one or more stripe waveguides formed in the waveguide region of the second half of the respective semiconductor chip. Such strip waveguides may be formed for one-dimensional guiding along the guiding direction of the laser radiation generated in the active region of the semiconductor chip. If the semiconductor chip has more than one emitter region, the semiconductor chip may have more than one such strip waveguide.

[0011] For example, the emitter region or the strip waveguide extends along the lateral direction of the semiconductor chip. In particular, the strip waveguide has the form of a ridge protruding along the vertical direction. If the semiconductor chip has multiple emitter regions, the semiconductor chip may have multiple strip waveguides, which are arranged side by side in a top view, in particular, may have the form of convex ridges arranged side by side.

[0012] The lateral direction is understood to mean in particular a direction parallel to the main plane of extension of the semiconductor chip or of the support, and the vertical direction is understood to mean in particular a direction oriented perpendicular to the main plane of extension of the semiconductor chip or of the support, the vertical direction and the lateral direction being perpendicular to each other.

[0013] In the case of a ridge or stripe laser, the laser beam is launched at the side of the ridge or stripe laser, and the generated laser beam propagates essentially along a lateral direction parallel to the strip waveguide.

[0014] According to at least one embodiment of the component, the semiconductor chip of the component has connection pads, via which the semiconductor chip or the emitter can be contacted with the outside, for example by means of contact structures of the carrier.

[0015] In particular, the connection pads are arranged on the rear side of the semiconductor chip, for example between the support and the semiconductor body of the semiconductor chip, and the semiconductor chip may have through contacts that extend along a vertical direction, for example through at least one semiconductor region of the semiconductor body, and are each conductively connected to one of the connection pads.

[0016] According to at least one embodiment of the component, the semiconductor chip is electrically connected via the support, for example the support has contact structures which are in electrical contact with the connection pads of the semiconductor chip, the contact structures may be in electrical contact with all the connection pads of the semiconductor chip.

[0017] According to at least one embodiment of the component, the number of connection pads of the semiconductor chip or emitter is equal to the number of ridges or emitter regions of the associated semiconductor chip or emitter.

[0018] According to at least one embodiment of the component, the component has at least two, in particular exactly two, double or triple emitters.

[0019] According to at least one embodiment of the component, the emitters are positioned adjacent to one another such that a wavelength spread of 10 nm±5 nm, 10 nm±3 nm, or 10 nm±1 nm is achieved.

[0020] In at least one embodiment of the AR glasses, VR glasses, or data glasses, the glasses include the components described herein.

[0021] Further embodiments and further developments of the component will become apparent from the exemplary embodiments described below in conjunction with FIGS. [Brief description of the drawings]

[0022] [Figure 1]1 shows a conventional component having a quadruple emitter. [Diagram 2] 1 shows various examples of components with dual emitters. [Diagram 3] 1 shows various examples of components with dual emitters. [Figure 4] 1 shows various examples of components with dual emitters. [Diagram 5] 1 shows various examples of components with dual emitters. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] Identical, equivalent or equivalently acting elements are designated by the same reference numerals in the figures. The figures are schematic and therefore not necessarily drawn to scale. Relatively small elements, in particular layer thicknesses, may be shown rather exaggeratedly large for the sake of clarity.

[0024] FIG. 1 shows a component 10 with a quadruple emitter C. The quadruple emitter C has four ridges R. The different ridges R can be configured to generate electromagnetic radiation of different wavelengths. The different ridges R can also be configured to generate electromagnetic radiation of substantially the same peak wavelength. For example, the ridges are configured to generate laser radiation. Such a component or quadruple emitter may have high yield losses, since all four emitter regions R must be in specification and have a certain desired wavelength spread, for example of about 10 nm in total. Thus, a great deal of effort is required to achieve four different wavelengths in a quadruple emitter.

[0025] 1, the component 10 or quadruple emitter C has, in particular on the rear side of the chip, four connection pads AP, which are arranged for making an electrical contact, for example an n-contact or a p-contact, respectively, to one of the ridges R. Along the lateral direction, the ridges R are laterally separated from one another by a lateral distance A, for example of about 50 μm each. The component 10 or quadruple emitter C has a lateral width B, for example of 300 μm.

[0026] 2, the component 10 has two dual emitters LC and RC, i.e. two separated semiconductor chips 10C, which are spatially separated from each other along the lateral direction by an intermediate region D or a lateral distance D.

[0027] Specifically, the quadruple emitter C shown in FIG. 1 can be split into two double emitters LC and RC. The lateral width B can be halved, but the lateral distance A between the ridges R can be maintained. In this case, only two emitter regions R, i.e., two ridges R instead of four ridges R, are required to comply with the specifications. This allows a significantly higher yield, since at most one emitter region is wavelength shifted. Thus, the manufacturing effort required for the individual double emitters LC and RC is significantly reduced. Each of the individual double emitters LC and RC can be formed as a single semiconductor chip 10C. The lateral distance D between the semiconductor chips 10C can be variably selected, so that the desired bandwidth expansion can be achieved in a simple manner.

[0028] Thus, in comparison with FIG. 1, FIG. 2 shows two double emitters LC and RC, specifically two separated semiconductor chips 10C, instead of only one quadruple emitter C. The manufacture of the separated double emitters LC and RC is simplified, since no artificial trench is created to widen the bandwidth, as in the quadruple emitter C. In comparison with the quadruple emitter C shown in FIG. 1, each of the separated semiconductor chips 10C has a lateral width NB, which is half the lateral width of the quadruple emitter C shown in FIG. 1.

[0029] As shown diagrammatically in Fig. 2, each of the dual emitters LC and RC may have several through contacts V. In particular, a through contact V is formed in electrical contact with one of the ridges R. For example, a through contact V extends along the entire lateral extent of the associated ridge R. The number of through contacts V is for example the same as the number of connection pads AP and / or the number of ridges R. In other words, for each ridge R there is a uniquely assigned through contact V and / or connection pad AP.

[0030] The semiconductor chip 10C has a first semiconductor layer, a second semiconductor layer, and an active region arranged between the first semiconductor layer and the second semiconductor layer, the active region being configured to generate electromagnetic radiation, specifically coherent electromagnetic radiation, during operation of the semiconductor chip 10C. In a top view of the semiconductor chip 10C, the through contact V may overlap a partial region of the active zone. Due to this overlap, electromagnetic radiation is primarily generated only in the partial region of the active region, specifically overlapping with the through contact V.

[0031] If the semiconductor chip 10C has two ridges R that are electrically contacted via two associated through contacts V and two associated connection pads AP, the semiconductor chip 10C can generate electromagnetic radiation in two different partial regions of the active zone. The generated electromagnetic radiation is, for example, laser radiation. In particular, the generated laser radiation has substantially the same peak wavelength. The laser radiation S can be emitted at a side surface of the semiconductor chip 10C. This is, for example, shown diagrammatically in FIG. 5.

[0032] The component 10 shown in FIG. 2 has two semiconductor chips 10C, each of which has two emitter regions R, and the lateral distance between the two emitter regions R is A. For example, the lateral distance A is indicated by the distance between two light-emitting points of the two emitter regions on the side of the semiconductor chip 10C or the side of the component 10. For example, the lateral distance A is 20 μm to 60 μm, such as 25 μm±5 μm, 30 μm±5 μm, 35 μm±5 μm, or 50 μm±5 μm. When the component 10 has two or more semiconductor chips 10C, the semiconductor chips 10C may have the same lateral distance A between adjacent emitter regions R.

[0033] In particular, the component 10 has exactly two semiconductor chips 10C, each formed as a dual emitter LC or RC with exactly two emitter regions R. Deviating from Fig. 2, in which the semiconductor chips 10C are each formed as dual emitters, the semiconductor chips 10C may each be formed as a triple emitter with exactly three emitter regions R. The emitter regions R of the same semiconductor chip 10C or of all radiation-emitting semiconductor chips 10C of the component 10 may be configured to generate coherent radiation of the same peak wavelength or of different peak wavelengths.

[0034] The component 10 can have two, three, or more semiconductor chips 10C having different or the same structure. If the semiconductor chips 10C are formed similarly, they can have the same semiconductor structure. The semiconductor bodies of the similarly formed semiconductor chips 10C can be formed of the same material. For example, the semiconductor bodies of the semiconductor chips 10C shown in FIG. 2 can be formed from the common semiconductor body of the semiconductor chips 10C shown in FIG. 1, for example, by a singulation process. Also, each of the semiconductor chips 10C can have the same number of emitter regions R. If the semiconductor chips 10C are formed differently from each other, the semiconductor chips 10C can have different numbers of emitter regions R and / or different semiconductor structures, or can be formed of different semiconductor materials.

[0035] As shown in Fig. 1 or 2, the emitter regions R of the same semiconductor chip 10C extend parallel to each other. The emitter regions R of the same semiconductor chip 10C are separated from each other by a lateral distance A, which may be 20 μm to 60 μm. For example, the lateral distance A is 30 μm or 50 μm.

[0036] The two semiconductor chips 10C are spatially separated from each other by a lateral intermediate region D or a lateral distance D. The lateral intermediate region D may have a width of 5 μm to 50 μm. The lateral distance D between two adjacent semiconductor chips 10C may be longer or shorter than the lateral distance A between two adjacent emitter regions R. Specifically, the intermediate region D between two adjacent semiconductor chips 10C is configured to adjust the lateral distance between two adjacent emitter regions R on the outer sides of the adjacent semiconductor chips 10C.

[0037] The component 10 can have an equal lateral separation distance DA for all emitter regions R. This is shown, for example, in FIG. 3. In this case, two adjacent emitter regions R of the same or different semiconductor chips 10C have the same lateral separation distance DA, in particular with a maximum manufacturing tolerance of a few nanometers, such as up to 5 nm, 3 nm, or 1 nm. In other words, any two adjacent emitter regions R of the component can have the same separation distance DA. For example, the equal separation distance DA is 30 μm±5 μm, 35 μm±5 μm, 40 μm±5 μm, 45 μm±5 μm, or 50 μm±5 μm.

[0038] The embodiment of the component shown in FIGS. 3 and 4 is substantially the same as the embodiment of the component shown in FIG.

[0039] According to FIG. 3, the lateral spacing A or the equidistant lateral separation distance DA may be 50 μm. The intermediate region D between two adjacent semiconductor chips 10C may be 5 μm wide. If the component 10 has two semiconductor chips 10C and has a total of four emitter regions R, the four emitter regions R may be distributed over a total lateral width GA of, for example, 150 μm. The total width GA thus indicates the width of the emitter regions R of the component 10, specifically the region in which all the emitter regions R are located. Each of the semiconductor chips 10C may have a lateral width NB of, for example, 150 μm. All geometric dimensions specified in the present disclosure with respect to width and / or spacing may be subject to manufacturing tolerances of a few microns, for example 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less.

[0040] According to Fig. 3, the n ridges R of the semiconductor chip C or laser diode, for example shown in Fig. 1, are divided into groups of n / 2 ridges R on the two separated semiconductor chips / laser diodes 10C, respectively. In particular, it is shown that all n ridges R of both separated semiconductor chips / laser diodes are arranged with an equal separation distance DA, in particular after being attached to the support / substrate 9 (see also Fig. 5). The number n of ridges R may deviate from 4 and be 6.

[0041] 4, the semiconductor chips 10C each have the same lateral distance A between the emitter regions R associated with each semiconductor chip 10C. The two adjacent emitter regions R of the different semiconductor chips 10C are spatially separated from each other by a lateral mid-distance ZA, and the lateral mid-distance ZA between the two adjacent emitter regions R of the different semiconductor chips 10C is different from the lateral distance A between the two adjacent emitter regions R of the same semiconductor chip 10C. For example, the lateral mid-distance ZA between the two adjacent emitter regions R of the different semiconductor chips 10C is longer or shorter than the lateral distance A between the two adjacent emitter regions R of the same semiconductor chip 10C.

[0042] 4, the component 10 has a lateral distance A between two adjacent emitter regions R of the same semiconductor chip 10C, which may be 30 μm. The lateral intermediate distance ZA between two adjacent emitter regions R of adjacent semiconductor chips 10C may be 70 μm. The intermediate region D may have a width of 45 μm. The total width GA over which the four emitter regions R are distributed may furthermore be, for example, 150 μm. Each of the semiconductor chips 10C may have a lateral NB of about 150 μm.

[0043] According to Fig. 4, the n ridges R of, for example, the semiconductor chip C or laser diode shown in Fig. 1 are divided into groups of n / 2 ridges R on the two separated semiconductor chips / laser diodes 10C, respectively. The lateral distance of the outer ridges R is maintained (for example GA = 150 μm). In contrast to Fig. 3, the inner ridges R are moved closer to the outer ridges (for example distance A = 30 μm) in order to make the space between the two semiconductor chips / laser diodes 10C larger.

[0044] In particular, Figures 3 and 4 show a physical realization of a component 10 with two dual emitters LC and RC with a bandwidth of 10 nm, but the details of the component 10 described herein are not necessarily limited to those shown in Figures 3 and 4.

[0045] Deviating from figures 2 to 4, the double emitters LC and RC may be arranged on a support 9, in particular a common support 9 (see for example figure 5). Deviating further from figures 2 to 4, the component 10 may for example have two triple emitters or even two quadruple emitters. The emitters, i.e. the semiconductor chips 10C, may be fixed, in particular soldered, on the support 9 in such a way that a predefined distance A or D between the emitter regions R, i.e. between the ridges R or between the emitters or between the semiconductor chips 10C, can be maintained with a maximum manufacturing tolerance of for example ±5 μm or ±2 μm. The distance A between the ridges R may be about 50 μm or less. By a combination of separate separated double or triple emitters, a wavelength broadening of for example 10 nm ±5 nm, 10 nm ±3 nm or 10 nm ±1 nm can be achieved.

[0046] To achieve an increased spectral emission width, the spectra of the individual ridges are overlapped with a small wavelength offset. In many cases, a spectral width (wavelength broadening) of about 10 nm (FWHM) is desired. To achieve this value, the wavelength offset between the emitters or emitter regions or ridges can be about 2 μm to 5 μm between the individual resonators.

[0047] The component 10 may include multiple resonators, the ridges being positioned adjacent to each other such that the spectra of the individual ridges R overlap with a wavelength offset during operation of the component 10. Specifically, the wavelength offset is 2 μm to 5 μm between the individual resonators. As a result, a spectral width of 10 nm ± 5 nm may be achieved.

[0048] 5 shows a component 10 with at least two semiconductor chips 10C on a common support 9. The semiconductor chips 10C can be electrically connected to the outside via the support 9, in particular via contact structures of the support 9. The contact structures of the support 9 can be adapted to the arrangement of the connection pads AP on the rear side of the semiconductor chips 10C or vice versa.

[0049] The number of connection pads AP of the semiconductor chip 10C may be the same as the number of emitter regions R of the corresponding semiconductor chip 10C. In particular, the emitter regions R are formed as ridges. The semiconductor chip 10C may have through contacts V, each of which is formed to be in electrical contact with one of the ridges R. The through contacts V may extend along the entire lateral extent of the associated ridge R. In particular, the positions of the through contacts V define selected sub-regions of the active region of each semiconductor chip 10C into which charge carriers are selectively injected, such that the selected sub-regions of the active region are configured to generate electromagnetic radiation during operation of the component 10. For example, the number of through contacts V is the same as the number of connection pads AP and / or the number of ridges R.

[0050] During operation of component 10, emitter regions R are configured to generate electromagnetic radiation that can be emitted laterally from component 10 at a side of component 10, i.e., a side of semiconductor chip 10C. For example, emitter regions R are positioned adjacent to one another such that a wavelength spread of 10 nm±5 nm is achieved.

[0051] Specifically, by using a dual emitter, a natural wavelength shift of the emitter region / ridge R per semiconductor chip 10C, such as per laser diode LC or RC, can be achieved, particularly the desired bandwidth expansion. Specifically, the natural wavelength shift occurs due to the short predetermined distance of the emitter region / ridge R from the chip edge. Thus, compared to a quadruple emitter that achieves a precise wavelength shift by an etched trench, the present disclosure provides a simpler way to achieve the desired bandwidth expansion.

[0052] This patent application claims the priority of German patent application No. 10 2021 115 230.5 and of German patent application No. 10 2021 123 010.1, the disclosure content of which is hereby incorporated by reference.

[0053] Although the invention has been described with reference to exemplary embodiments, it is not intended that the invention be limited to the exemplary embodiments, but rather that the invention includes any novel feature and any combination of features, and in particular any combination of features in the claims, even if that feature or combination is not itself explicitly set forth in the claims or in the exemplary embodiments. [Explanation of symbols]

[0054] 10 Components C Semiconductor chip, multi-emitter 10C, LC semiconductor chip 10C, RC semiconductor chip 9 Support A is the distance between two adjacent emitter regions on the same semiconductor chip AP Connection Pad B Width of semiconductor chip / multi-emitter D Distance between two adjacent semiconductor chips / mid-area GA Emitter area width NB Semiconductor chip / double emitter width R emitter region, ridge S Radiation V through contact ZA is the distance between two adjacent emitter regions of adjacent semiconductor chips

Claims

1. A component (10) having a support (9) and exactly two semiconductor chips (10C) arranged side-by-side on said support (9), The two semiconductor chips (10C) are formed as double emitters each having exactly two emitter regions (R) or as triple emitters each having exactly three emitter regions (R), and thus differ from single emitters, the emitter regions (R) of the component (10) are assigned to the exactly two semiconductor chips (10C), said exactly two semiconductor chips (10C) being laser diodes having respective ridges defining said emitter regions (R); The exact two semiconductor chips (10C) are electrically contacted via the support (9), The emitter regions (R) are arranged side by side such that a wavelength broadening of 10 nm ± 5 nm is achieved. The component (10).

2. said exactly two semiconductor chips (10C) are each formed as a double emitter having exactly two emitter regions (R); The component (10) of claim 1.

3. said exactly two semiconductor chips (10C) each being formed as a triple emitter having exactly three emitter regions (R); The component (10) of claim 1.

4. The component (10) of claim 1 , wherein each of the emitter regions (R) is configured to generate coherent radiation.

5. The component (10) of claim 1, wherein the exactly two semiconductor chips (10C) have the same structure.

6. The component (10) of claim 1, wherein the emitter regions (R) of a same semiconductor chip (10C) are parallel to one another and spatially separated by a lateral distance (A), the lateral distance (A) being between 20 μm and 60 μm.

7. Component (10) according to claim 1, wherein said exactly two semiconductor chips (10C) are spatially separated from each other by a lateral intermediate region (D), said lateral intermediate region (D) having a width of 5 μm to 50 μm.

8. 8. The component (10) of claim 1, wherein all emitter regions (R) have equal lateral separation distances (DA).

9. each of the exactly two semiconductor chips (10C) having the same lateral distance (A) between the emitter regions (R) associated with each of the semiconductor chips (10C); Two adjacent emitter regions (R) of different semiconductor chips (10C) are spatially separated from each other by an intermediate distance (ZA); A lateral intermediate distance (ZA) between two adjacent emitter regions (R) of different semiconductor chips (10C) is different from the lateral distance (A) between two adjacent emitter regions (R) of the same semiconductor chip (10C); A component (10) according to any one of claims 1 to 7.

10. The lateral intermediate distance (ZA) between the two adjacent emitter regions (R) of different semiconductor chips (10C) is longer than the lateral distance (A) between the two adjacent emitter regions (R) of the same semiconductor chip (10C); 10. The component (10) of claim 9.

11. 8. The component (10) according to claim 1, wherein the exactly two semiconductor chips (10C) each have a connection pad (AP), and the exactly two semiconductor chips (10C) are conductively connected to contact structures of the support (9) via the connection pads (AP).

12. the number of said connection pads (AP) of said semiconductor chip (10C) is equal to the number of said emitter regions (R) of said associated semiconductor chip (10C); Component (10) according to claim 11.

13. the semiconductor chip (10C) has through contacts (V), each of the through contacts (V) being formed to be in electrical contact with one of the ridges; The through contacts (V) extend along a vertical direction through at least one semiconductor region of the semiconductor body of the semiconductor chip (10C), and each of the through contacts (V) is conductively connected to one of the connection pads (AP); said through contact (V) extending along the entire lateral extent of said associated ridge; the number of said through contacts (V) is the same as the number of said connection pads (AP) and / or the number of said ridges; Component (10) according to claim 11.

14. 8. AR, VR or data glasses comprising a component (10) according to any one of the preceding claims.

Images