Substrate Processing Equipment

Abstract

To provide a substrate processing apparatus capable of reducing the time of a polishing processing.SOLUTION: In a substrate processing apparatus 1, an indexer block B1, a polishing block B2, a coating block B3, and an interface block B5 are linearly arranged in this order in a horizontal direction. The coating block B3 includes a coating unit PR for coating a front surface of a substrate W with a resist, and the polishing block B2 includes a polishing unit 22 for polishing a back surface of the substrate W. The polishing unit 22 includes: a holding rotational part that rotates the substrate in a state where the substrate W is held in a horizontal posture; heating means for heating the substrate W; and a polishing tool that contains a resin body in which an abrasive grain is scattered, which comes into contact with the back surface of the substrate W rotated while being heated, and polishes the back surface of the substrate W by a chemical mechanical polishing method.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus for polishing the back surface of a substrate. Examples of the substrate include semiconductor substrates, substrates for FPDs (Flat Panel Displays), glass substrates for photomasks, substrates for optical disks, substrates for magnetic disks, ceramic substrates, and substrates for solar cells. Examples of the FPD include liquid crystal display devices and organic EL (electroluminescence) display devices. Here, the back surface of the substrate refers to the surface on which no electronic circuit is formed, as opposed to the surface of the substrate on which an electronic circuit is formed (device surface). [Background technology]

[0002] A polishing apparatus for polishing the back surface of a substrate includes a holding and rotating unit and a polishing head. The holding and rotating unit rotates the substrate while holding it in a horizontal position. The polishing apparatus supplies a polishing liquid and polishes the substrate by bringing the polishing head into contact with the back surface of the rotating substrate (see, for example, Patent Document 1).

[0003] Another type of polishing apparatus is one that performs dry chemical mechanical grinding (CMG) on substrates (see, for example, Patent Document 2). This polishing apparatus includes a holding and rotating unit and a synthetic grinding wheel. The synthetic grinding wheel is formed by fixing an abrasive (abrasive grains) with a resin binder. This polishing apparatus polishes the substrate by bringing the synthetic grinding wheel into contact with the substrate. There is also a substrate processing apparatus that includes a polishing tool for removing contaminants and contact marks on the back surface of the substrate (see, for example, Patent Document 3).

[0004] Patent Document 4 describes a grinding device equipped with a grinding head. The grinding head includes a head body and an annular grinding wheel. The annular grinding wheel is disposed on the underside of the head body. A recess is provided on the underside of the head body in correspondence with the hollow space at the center of the annular grinding wheel. A suction hole communicating with a suction flow passage is provided on the inner surface of the recess. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent No. 6162417 [Patent Document 2] Patent No. 6779540 [Patent Document 3] Patent No. 6740065 [Patent Document 4] Patent Publication No. 2021-053738 Summary of the Invention [Problem to be solved by the invention]

[0006] However, conventional devices having such a configuration have the following problem. That is, in recent years, there has been a problem of defocus (so-called out-of-focus) in EUV (Extreme Ultraviolet) exposure devices due to the substrate flatness of the back surface of a substrate (e.g., a wafer). One of the causes of poor flatness is thought to be scratches. Therefore, in order to remove scratches, the use of the synthetic grindstone of Patent Document 2 as a polishing tool has been considered. Here, since the polishing process takes time, there is a demand to shorten the time of the polishing process.

[0007] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate processing apparatus capable of shortening the time required for polishing processing. [Means for solving the problem]

[0008] In order to achieve the above object, the present invention has the following configuration: That is, a substrate processing apparatus according to the present invention includes a carrier mounting stage on which a carrier for accommodating a substrate is mounted, an indexer block for loading and unloading the substrate from the carrier mounted on the carrier mounting stage, a processing block for performing a predetermined processing on the substrate, and an interface block for loading and unloading the substrate from an external exposure device, the indexer block, the processing block, and the interface block being arranged in this order in a horizontal line, the processing block including a coating block and a polishing block arranged in a horizontal line, the coating block including a coating unit for coating a resist on a front surface of the substrate, the polishing block including a polishing unit for polishing a rear surface of the substrate, the polishing unit including a holding and rotating section for rotating the substrate while holding the substrate in a horizontal position, a heating means for heating the substrate, and a polishing tool including a resin body having abrasive grains dispersed therein, which comes into contact with the rear surface of the heated and rotating substrate, and polishes the rear surface of the substrate by a chemical mechanical grinding method.

[0009] According to the substrate processing apparatus of the present invention, the substrate processing apparatus includes a polishing unit (a holding and rotating part, a polishing tool, and a heating means) and a coating unit. The polishing tool has a resin body in which abrasive grains are dispersed. The polishing tool contacts the rear surface of the rotating substrate and polishes the rear surface of the substrate by a chemical mechanical grinding method. When this polishing is performed, the substrate is heated. When the substrate is heated, the polishing rate can be increased. Therefore, the time for the polishing process can be shortened. Furthermore, the polishing unit and the coating unit coat the front surface of the substrate with resist and polish the rear surface of the substrate. Therefore, the flatness of the substrate coated with resist can be improved, thereby eliminating the defocus problem of the exposure apparatus.

[0010] In addition, the above-mentioned substrate processing apparatus preferably further includes a control unit, which adjusts the polishing rate by controlling the heating temperature of the substrate by the heating means when polishing. By increasing or decreasing the heating temperature of the substrate, the polishing rate can be increased or decreased.

[0011] In the above-mentioned substrate processing apparatus, it is preferable that the control unit further adjusts the polishing rate by controlling at least one of the contact pressure of the polishing tool against the substrate, the moving speed of the polishing tool, the rotation speed of the polishing tool, and the rotation speed of the substrate. For example, the contact pressure of the polishing tool against the substrate can be reduced by increasing the heating temperature of the substrate while maintaining the polishing rate. This can reduce the load on the substrate caused by the contact pressure. In other words, it can prevent the substrate W from being pressed too hard.

[0012] In the above-mentioned substrate processing apparatus, the holding and rotating unit includes a spin base rotatable around a rotation axis extending in the vertical direction, and three or more holding pins arranged in a ring shape on the upper surface of the spin base so as to surround the rotation axis and configured to hold the substrate at a distance from the upper surface of the spin base by pinching a side surface of the substrate, and an example of the heating means is a first heater arranged on the upper surface of the spin base. The substrate can be heated by the first heater arranged on the upper surface of the spin base.

[0013] In addition, in the above-mentioned substrate processing apparatus, the holding and rotating section includes a spin base that can rotate around a rotation axis extending in the vertical direction, and three or more holding pins that are arranged in a ring shape on the upper surface of the spin base so as to surround the rotation axis and are configured to hold the substrate at a distance from the upper surface of the spin base by clamping the sides of the substrate, and one example of the heating means is a gas outlet that opens on the upper surface of the spin base and is arranged in the center of the spin base, and ejects heated gas in the gap between the substrate and the spin base so that gas flows from the center of the substrate to the outer edge of the substrate.

[0014] The substrate can be heated by the heated gas from the gas outlet. The device surface (front surface) of the substrate faces the spin base. When gas is discharged from the gas outlet, the gas is ejected to the outside from the gap between the outer edge of the substrate and the spin base. This prevents, for example, polishing debris or liquid from adhering to the device surface of the substrate. In other words, the device surface of the substrate can be protected.

[0015] In the above-mentioned substrate processing apparatus, an example of the heating means is a second heater for heating the polishing tool. When the polishing tool is heated, the substrate can be heated through the polishing tool. Also, the interface between the polishing tool and the rear surface of the substrate can be effectively heated.

[0016] In the above-mentioned substrate processing apparatus, an example of the heating means is a heated water supply nozzle that supplies heated water onto the back surface of the substrate. The substrate can be heated by the heated water. In addition, polishing debris can be washed away from the back surface of the substrate by the heated water.

[0017] In addition, in the above-mentioned substrate processing apparatus, it is preferable that the processing block further includes a developing block which performs a development process on the substrate exposed by the exposure device, and that the coating block, polishing block and developing block are arranged in a horizontal line.

[0018] In addition, a substrate processing apparatus according to the present invention includes a carrier mounting table on which a carrier that contains a substrate is mounted, an indexer block that moves the substrate into and out of the carrier mounted on the carrier mounting table, a processing block that performs a predetermined processing on the substrate, and an interface block that transports the substrate into and out of an external exposure device, wherein the indexer block, the processing block, and the interface block are arranged in this order in a horizontal line, the processing block has a coating unit that coats a resist on a front surface of the substrate, and the interface block has a polishing unit that polishes a back surface of the substrate on which the resist has been coated by the coating unit, and the polishing unit includes a holding and rotating section that rotates the substrate while holding it in a horizontal position, a heating means that heats the substrate, and a polishing tool that includes a resin body having abrasive grains dispersed therein, and comes into contact with the back surface of the substrate as it rotates while being heated, and polishes the back surface of the substrate by a chemical mechanical grinding method.

[0019] Furthermore, in the above-mentioned substrate processing apparatus, it is preferable that the processing block comprises a coating block and a developing block, the coating block has the coating unit, the developing block has a developing unit that performs development processing on the substrate exposed by the exposure device, and the developing block is positioned between the coating block and the interface block.

[0020] In addition, a substrate processing apparatus according to the present invention includes a carrier mounting table on which a carrier that contains a substrate is mounted, an indexer block that moves the substrate into and out of the carrier mounted on the carrier mounting table, a processing block that performs a predetermined processing on the substrate, and an interface block that moves the substrate into and out of an external exposure device, the indexer block, the processing block, and the interface block being arranged in a horizontal line in this order, the processing block including a coating layer and a polishing layer stacked in the vertical direction, the coating layer having a coating unit that applies a resist to the front surface of the substrate, the polishing layer having a polishing unit that polishes the back surface of the substrate, and the polishing unit including a holding and rotating section that rotates the substrate while holding it in a horizontal position, a heating means that heats the substrate, and a polishing tool that includes a resin body having abrasive grains dispersed therein, and that comes into contact with the back surface of the substrate being heated and rotated, and polishes the back surface of the substrate by a chemical mechanical grinding method.

[0021] In addition, in the above-mentioned substrate processing apparatus, it is preferable that the processing block further includes a development layer that performs a development process on the substrate exposed by the exposure device, and that the development layer, the coating layer and the polishing layer are stacked in the vertical direction.

[0022] Preferably, the substrate processing apparatus further comprises an intermediate block disposed between the indexer block and the processing block, the intermediate block comprising a buffer group and a substrate transport robot, the buffer group comprising a plurality of substrate buffers disposed vertically, each of which holds a substrate, the substrate transport robot transporting the substrate between the substrate buffers, and the indexer block transporting the substrate between the processing block via the buffer group, thereby enabling efficient transport of substrates W on the indexer block side.

[0023] In addition, the substrate processing apparatus of the present invention comprises a first processing block having a polishing unit for polishing a back surface of a substrate, a carrier mounting table for mounting a carrier that contains the substrate, an indexer block for loading and unloading the substrate from the carrier mounted on the carrier mounting table, a second processing block having a coating unit for coating a resist on a front surface of the substrate, and an interface block horizontally connected to the first processing block or the second processing block and for loading and unloading the substrate from an external exposure device, wherein the first processing block, the indexer block, and the second processing block are arranged in a horizontal line in this order, and the polishing unit comprises a holding and rotating section for rotating the substrate while holding it in a horizontal position, a heating means for heating the substrate, and a polishing tool including a resin body having dispersed abrasive grains, which comes into contact with the back surface of the substrate as it rotates while being heated, and polishes the back surface of the substrate by a chemical mechanical grinding method.

[0024] In addition, in the above-mentioned substrate processing apparatus, it is preferable that the second processing block further includes a developing unit that performs a developing process on the substrate exposed by the exposure device, and the interface block is horizontally connected to the second processing block. Effect of the Invention

[0025] According to the substrate processing apparatus of the present invention, the time required for polishing can be shortened. [Brief description of the drawings]

[0026] [Figure 1] 1 is a cross-sectional view of a substrate processing apparatus according to a first embodiment. [Diagram 2] 1 is a vertical sectional view of a substrate processing apparatus according to a first embodiment. [Diagram 3] 2 is a right side view of the substrate processing apparatus according to the first embodiment. FIG. [Figure 4] FIG. [Diagram 5]4A is a plan view showing the holding and rotating part, and FIG. 4B is a vertical sectional view showing a part of the holding and rotating part in an enlarged manner. [Figure 6] FIG. 2 is a diagram showing a polishing mechanism of the polishing unit. [Figure 7] FIG. 2 is a diagram showing an inspection unit. [Figure 8] 1A to 1D are diagrams illustrating a reversing unit. [Figure 9] 4 is a flowchart showing the operation of the polishing processing apparatus according to the first embodiment. [Figure 10] 1A is a longitudinal cross-sectional view showing a schematic state of the substrate before the etching process, FIG. 1B is a longitudinal cross-sectional view showing a schematic state of the substrate after the etching process (before the back surface polishing process), and FIG. 1C is a longitudinal cross-sectional view showing a schematic state of the substrate after the back surface polishing process. [Figure 11] 10 is a flowchart showing details of a wet etching process. [Figure 12] FIG. 4 is a diagram showing the relationship between the heating temperature of the substrate and the polishing rate. [Figure 13] 10 is a flowchart showing details of a substrate cleaning process. [Figure 14] FIG. 11 is a cross-sectional view of a substrate processing apparatus according to a second embodiment. [Figure 15] FIG. 11 is a right side view of the substrate processing apparatus according to the second embodiment. [Figure 16] FIG. 11 is a vertical sectional view of a substrate processing apparatus according to a third embodiment. [Figure 17] FIG. 11 is a right side view of the substrate processing apparatus according to the third embodiment. [Figure 18] 11 is a cross-sectional view of a substrate processing apparatus (polishing layer) according to Example 3. FIG. [Figure 19] (a) is a cross-sectional view of the coating layer, and (b) is a cross-sectional view of the developed layer. [Figure 20] FIG. 13 is a vertical sectional view of a substrate processing apparatus according to a modified example of the third embodiment. [Figure 21] FIG. 11 is a vertical sectional view of a substrate processing apparatus according to a fourth embodiment. [Figure 22] FIG. 11 is a right side view of the substrate processing apparatus according to the fourth embodiment. [Figure 23] FIG. 11 is a cross-sectional view of an upper layer of a substrate processing apparatus according to a fourth embodiment. [Figure 24] FIG. 11 is a cross-sectional view of a lower layer of a substrate processing apparatus according to a fourth embodiment. [Diagram 25] FIG. 13 is a right side view of the substrate processing apparatus according to a modified example of the fourth embodiment. [Figure 26] 13 is a diagram showing a preferred configuration of a polishing mechanism of a polishing unit according to Example 5. FIG. [Figure 27] FIG. 11 is a vertical cross-sectional view of a polishing head according to a fifth embodiment. [Figure 28] FIG. 13 is a bottom view of the polishing head according to the fifth embodiment. [Figure 29] FIG. 13 is a vertical cross-sectional view of a polishing head according to a sixth embodiment. [Diagram 30] FIG. 13 is a bottom view of the polishing head according to the sixth embodiment. [Diagram 31] FIG. 13 is a vertical sectional view of a polishing head according to Example 7. [Diagram 32] FIG. 13 is a bottom view of the polishing head according to Example 7. [Diagram 33] 13 is a flowchart showing the operation of the substrate processing apparatus according to the eighth embodiment. [Diagram 34] FIG. 13 is a diagram showing the relationship between the heating temperature of the substrate and the contact pressure (pressing pressure) of the polishing tool in Example 9. [Diagram 35] FIG. 23 is a side view showing a polishing unit according to a tenth embodiment. [Diagram 36] FIG. 23 is a side view showing the liquid processing unit according to Example 10. [Figure 37] 13(a) and 13(b) are diagrams showing a heater for heating a grinding tool according to a modified example. [Figure 38] FIG. 13 is a diagram showing the relationship between a combination of heating means and the heating temperature of a substrate according to a modified example. [Figure 39] FIG. 11 is a vertical sectional view of a substrate processing apparatus according to a modified example. Example 1

[0027] A first embodiment of the present invention will be described below with reference to the drawings. Fig. 1 is a cross-sectional view of a substrate processing apparatus according to the first embodiment. Fig. 2 is a vertical cross-sectional view of the substrate processing apparatus according to the first embodiment. Fig. 3 is a right side view of the substrate processing apparatus according to the first embodiment.

[0028] (1) Configuration of the Substrate Processing Apparatus 1 Please refer to Figures 1 to 3. The substrate processing apparatus 1 includes an indexer block B1, a polishing block B2, a coating block B3, a developing block B4, and an interface block B5. The interface block B5 will be referred to as "IF block B5" hereinafter as appropriate. The indexer block B1, the polishing block B2, the coating block B3, the developing block B4, and the IF block B5 are arranged linearly in the horizontal direction in this order. The blocks are referred to as areas.

[0029] The polishing block B2, the coating block B3, and the developing block B4 each have a two-layer structure. That is, the polishing block B2 includes two polishing layers 14A and 14B. The coating block B3 includes two coating layers 141A and 141B. The developing block B4 includes two developing layers 153A and 153B.

[0030] 2, the substrate processing apparatus 1 includes four reversing units RV1-RV4, four substrate placement parts PS1-PS4, and four substrate buffers BF1-BF4. Each of the four reversing units RV1-RV4 reverses the front and back of the substrate W. Furthermore, each of the substrate placement parts PS1-PS4 places a substrate on it.

[0031] The reversing unit RV1 and the substrate platform PS1 are disposed between the indexer block B1 and the upper polishing layer 14A. The reversing unit RV2 and the substrate platform PS2 are disposed between the indexer block B1 and the lower polishing layer 14B. The reversing unit RV3 and the substrate platform PS3 are disposed between the upper polishing layer 14A and the upper coating layer 141A. The reversing unit RV4 and the substrate platform PS4 are disposed between the lower polishing layer 14B and the lower coating layer 141B. The four reversing units RV1 to RV4 will be described in detail later.

[0032] Each of the substrate buffers BF1 to BF4 includes one or more substrate placement parts so that one or more substrates W can be placed thereon. The substrate buffer BF1 is disposed between the upper coating layer 141A and the upper development layer 153A. The substrate buffer BF2 is disposed between the lower coating layer 141B and the lower development layer 153B. The substrate buffer BF3 is disposed between the upper development layer 153A and the IF block B5. The substrate buffer BF4 is disposed between the lower development layer 153B and the IF block B5. In FIG. 2, for convenience of illustration, the reversal unit RV1, the substrate placement part PS1, the substrate buffer BF1, etc. are shown in front of the substrate transport robot TR1, etc.

[0033] (1-1) Configuration of indexer block B1 The indexer block B1 includes, for example, four (plural) carrier placement tables 3 and an indexer robot IR1. The four carrier placement tables 3 are arranged on the outer surface of a housing 5. Each of the four carrier placement tables 3 is used to place a carrier C thereon. The carrier C stores a plurality of substrates W. Each substrate W in the carrier C is in a horizontal position with its device surface facing upward (upward). For example, a FOUP (Front Open Unified Pod), a SMIF (Standard Mechanical Inter Face) pod, or an open cassette is used as the carrier C. The substrate W is a silicon substrate, and is formed, for example, in a disk shape.

[0034] The indexer robot IR1 takes out the substrate W from the carrier C placed on each carrier mounting stage 3, and also stores the substrate W in the carrier C. In other words, the indexer robot IR1 puts and takes out the substrate W into and from the carrier C placed on the carrier mounting stage 3. The indexer robot IR1 is disposed inside the housing 5. In addition, the indexer robot IR1 transports the substrate W between the carrier C placed on each carrier mounting stage 3, the reversing unit RV1, and the substrate mounting part PS1.

[0035] The indexer robot IR1 includes two hands 7, an advance / retract drive unit 9, an elevation / rotation drive unit 11, and a horizontal drive unit 12. Each of the two hands 7 holds a substrate W. Each of the two hands 7 is attached to the advance / retract drive unit 9 so as to be capable of advancing and retreating. The advance / retract drive unit 9 can simultaneously advance and retreat the two hands 7. The advance / retract drive unit 9 can also advance and retreat the two hands 7 individually. The elevation / rotation drive unit 11 raises / lowers and rotates the advance / retract drive unit 9 to raise / lowers and rotate the two hands 7. That is, the elevation / rotation drive unit 11 can move the advance / retract drive unit 9 in the up / down direction (Z direction) and rotate the advance / retract drive unit 9 around the vertical axis AX1.

[0036] The horizontal drive unit 12 includes a guide rail 12A extending in the Y direction. The horizontal drive unit 12 moves the lifting and rotating drive unit 11 in the Y direction in which the four carrier mounting stages 3 are lined up. This allows the horizontal drive unit 12 to move the two hands 7 in the Y direction. The advance / retract drive unit 9, the lifting and rotating drive unit 11, and the horizontal drive unit 12 each include an electric motor.

[0037] The indexer robot IR1 may be equipped with a SCARA type multi-joint arm and a lifting drive unit instead of the forward / backward drive unit 9, the lifting / rotating drive unit 11, and the horizontal drive unit 12. In this case, one or more hands 7 are provided at the tip of the multi-joint arm, and the base end of the multi-joint arm is attached to the lifting drive unit. The lifting drive unit raises and lowers the multi-joint arm in the vertical direction (Z direction). The multi-joint arm and the lifting drive unit each include an electric motor. The lifting drive unit may be configured to move in the Y direction. Alternatively, the lifting drive unit may be fixed to the floor or inner wall of the housing without being moved in the Y direction.

[0038] (1-2) Configuration of polishing block B2 The polishing block B2 includes two polishing layers 14A and 14B stacked vertically. The polishing layer 14A has a configuration similar to that of the polishing layer 14B. Therefore, the upper polishing layer 14A will be described as a representative. The upper polishing layer 14A includes a transport space 16, a substrate transport robot TR1, and, for example, eight (plural) processing units U1 to U4.

[0039] Each of the four processing units U1 to U4 is configured with two stages (see FIG. 3). The processing unit U1 is an inspection unit 20. Each of the processing units U2, U3, and U4 is a polishing unit 22. The number and types of the processing units U1 to U4 can be changed as appropriate.

[0040] The substrate transport robot TR1 is disposed in a transport space 16. The transport space 16 is configured to extend in the X direction in a plan view. The processing units U1 and U3 are disposed side by side in the X direction along the transport space 16. The processing units U2 and U4 are disposed side by side in the X direction along the transport space 16. The transport space 16 is disposed between the processing units U1 and U3 and the processing units U2 and U4.

[0041] The substrate transport robot TR1 transports substrates W among two reversing units RV1, RV3, two substrate placement parts PS1, PS3, and eight processing units U1 to U4. The substrate transport robot TR1 includes two hands 23, a forward / backward drive unit 25, a rotation drive unit 27, a horizontal drive unit 29, and a lift drive unit 30.

[0042] Each of the two hands 23 holds a substrate W. Each of the two hands 23 is attached to an advance / retract drive unit 25 so as to be able to advance / retract. The advance / retract drive unit 25 advances / retracts the two hands 23. The rotation drive unit 27 rotates the advance / retract drive unit 25 around a vertical axis AX2. This allows the orientation of the two hands 23 to be changed. The horizontal drive unit 29 moves the rotation drive unit 27 in the X direction. In addition, the lift drive unit 30 lifts / lowers the horizontal drive unit 29 in the Z direction. The two hands 23 are moved in the XZ directions by the horizontal drive unit 29 and the lift drive unit 30. The advance / retract drive unit 25, the rotation drive unit 27, the horizontal drive unit 29, and the lift drive unit 30 each include an electric motor.

[0043] (1-2-1) Polishing unit 22 4 is a diagram showing the polishing unit 22. The polishing unit 22 polishes the back surface of the substrate W. The polishing unit 22 includes a holding and rotating part 35, a polishing mechanism 37, and a substrate thickness measuring device 39. The holding and rotating part 35 corresponds to the holding and rotating part of the present invention.

[0044] The holding and rotating unit 35 holds one substrate W in a horizontal position with the back surface of the substrate W facing upward, and rotates the held substrate W. Here, the back surface of the substrate W refers to the surface on which no electronic circuits are formed, as opposed to the front surface of the substrate W, which is the surface on which electronic circuits are formed (device surface). The device surface of the substrate W held by the holding and rotating unit 35 faces downward.

[0045] The holding and rotating unit 35 includes a spin base 41, six holding pins 43, a hot plate 45, and a gas discharge port 47. The spin base 41 is formed in a disk shape and is disposed in a horizontal position. A rotation axis AX3 extending in the vertical direction passes through the center of the spin base 41. The spin base 41 is rotatable around the rotation axis AX3.

[0046] 5(a) is a plan view showing the spin base 41 and six holding pins 43 of the holding and rotating unit 35. The six holding pins 43 are provided on the upper surface of the spin base 41. The six holding pins 43 are provided in a ring shape so as to surround the rotation axis AX3. The six holding pins 43 are also provided at equal intervals on the outer edge side of the spin base 41. The six holding pins 43 place the substrate W on the six holding pins 43 away from the spin base 41 and a hot plate 45 described later. Furthermore, the six holding pins 43 are configured to sandwich the side surfaces of the substrate W. That is, the six holding pins 43 can hold the substrate W away from the upper surface of the spin base 41.

[0047] The six holding pins 43 are divided into three holding pins 43A that rotate and three holding pins 43B that do not rotate. The three holding pins 43A are rotatable around a rotation axis AX4 that extends in the vertical direction. When each holding pin 43A rotates around the rotation axis AX4, the three holding pins 43A hold the substrate W and release the held substrate W. The rotation of each holding pin 43A around the rotation axis AX4 is performed by, for example, magnetic attraction or repulsion by a magnet. The number of holding pins 43 is not limited to six, and may be three or more. The substrate W may be held by three or more holding pins 43 including the holding pins 43A that rotate and the holding pins 43B that do not rotate.

[0048] A hot plate 45 is provided on the upper surface of the spin base 41. The hot plate 45 includes an electric heater having, for example, a nichrome wire. The hot plate 45 is formed in a doughnut shape and a disk shape. The hot plate 45 heats the substrate W by radiant heat. The hot plate 45 also heats the gas discharged from a gas discharge port 47 described later, and heats the substrate W through the gas. The temperature of the substrate W is measured by a non-contact temperature sensor 46. The temperature sensor 46 includes a detection element that detects infrared rays emitted by the substrate W. The hot plate 45 corresponds to the heating means of the present invention. In the first embodiment, the polishing unit 22 does not include heaters 347 and 354 (see FIG. 4) described later.

[0049] A shaft 49 is provided on the lower surface of the spin base 41. The rotation mechanism 51 has an electric motor. The rotation mechanism 51 rotates the shaft 49 around a rotation axis AX3. That is, the rotation mechanism 51 rotates the substrate W held by six holding pins 43 (specifically, three holding pins 43A) provided on the spin base 41, around the rotation axis AX3.

[0050] 4 and 5(b). Gas discharge port 47 opens on the top surface of spin base 41 and is provided in the center of spin base 41. A flow path 53 that opens upward is provided in the center of spin base 41. Furthermore, a discharge member 57 is provided in flow path 53 via a plurality of spacers 55. Gas discharge port 47 is composed of a ring-shaped opening formed by the gap between discharge member 57 and flow path 53.

[0051] The gas supply pipe 59 is provided so as to penetrate the shaft 49 and the rotation mechanism 51 along the rotation axis AX3. The gas pipe 61 sends gas (e.g., an inert gas such as nitrogen) from a gas supply source 63 to the gas supply pipe 59. The gas pipe 61 is provided with an on-off valve V1. The on-off valve V1 starts and stops the supply of gas. When the on-off valve V1 is open, gas is discharged from the gas discharge port 47. When the on-off valve V1 is closed, gas is not discharged from the gas discharge port 47. The gas discharge port 47 discharges gas in the gap between the substrate W and the spin base 41 so that the gas flows from the center side of the substrate W to the outer edge of the substrate W.

[0052] Next, a configuration for supplying the chemical liquid, the rinse liquid, and the gas will be described. Polishing unit 22 includes a first chemical liquid nozzle 65, a second chemical liquid nozzle 67, a first cleaning liquid nozzle 69, a second cleaning liquid nozzle 71, a rinse liquid nozzle 73, and a gas nozzle 75.

[0053] To first chemical liquid nozzle 65, chemical liquid piping 78 for sending a first chemical liquid from first chemical liquid supply source 77 is connected. The first chemical liquid is, for example, hydrofluoric acid (HF). Chemical liquid piping 78 is provided with an on-off valve V2. On-off valve V2 supplies and stops the supply of the first chemical liquid. When on-off valve V2 is in an open state, the first chemical liquid is supplied from first chemical liquid nozzle 65. On the other hand, when on-off valve V2 is in a closed state, the supply of the first chemical liquid from first chemical liquid nozzle 65 stops.

[0054] A chemical liquid pipe 81 for sending the second chemical liquid from a second chemical liquid supply source 80 is connected to the second chemical liquid nozzle 67. The second chemical liquid is, for example, a mixture of hydrofluoric acid (HF) and nitric acid (HNO3), TMAH (tetramethylammonium hydroxide), or diluted hot ammonia water (hot-dNH4OH). An on-off valve V3 is provided in the chemical liquid pipe 81. The on-off valve V3 starts and stops the supply of the second chemical liquid. The first chemical liquid and the second chemical liquid correspond to the etching liquid of the present invention.

[0055] A cleaning liquid pipe 84 for sending the first cleaning liquid from a first cleaning liquid supply source 83 is connected to the first cleaning liquid nozzle 69. The first cleaning liquid is, for example, SC2 or SPM. SC2 is a mixture of hydrochloric acid (HCl), hydrogen peroxide (H2O2), and water. SPM is a mixture of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2). An on-off valve V4 is provided in the cleaning liquid pipe 84. The on-off valve V4 starts and stops the supply of the first cleaning liquid.

[0056] A cleaning liquid pipe 87 for sending the second cleaning liquid from a second cleaning liquid supply source 86 is connected to the second cleaning liquid nozzle 71. The second cleaning liquid is, for example, SC1. SC1 is a mixed liquid of ammonia, hydrogen peroxide (H2O2), and water. An opening / closing valve V5 is provided in the cleaning liquid pipe 87. The opening / closing valve V5 starts and stops the supply of the second cleaning liquid.

[0057] A rinse liquid pipe 90 for sending the rinse liquid from a rinse liquid supply source 89 is connected to the rinse liquid nozzle 73. The rinse liquid is, for example, pure water such as DIW (Deionized Water) or carbonated water. An on-off valve V6 is provided in the rinse liquid pipe 90. The on-off valve V6 starts and stops the supply of the rinse liquid.

[0058] A gas pipe 93 for sending gas from a gas supply source 92 is connected to the gas nozzle 75. The gas is an inert gas such as nitrogen. An on-off valve V7 is provided in the gas pipe 93. The on-off valve V7 starts and stops the supply of gas.

[0059] First chemical liquid nozzle 65 is moved in the horizontal direction by nozzle movement mechanism 95. Nozzle movement mechanism 95 includes an electric motor. Nozzle movement mechanism 95 may rotate first chemical liquid nozzle 65 around a preset vertical axis (not shown). Furthermore, nozzle movement mechanism 95 may move first chemical liquid nozzle 65 in the X direction and Y direction. Furthermore, nozzle movement mechanism 95 may move first chemical liquid nozzle 65 in the up and down direction (Z direction). Similarly to first chemical liquid nozzle 65, each of five nozzles 67, 69, 71, 73, 75 may be moved by a nozzle movement mechanism (not shown).

[0060] Next, the configuration of the polishing mechanism 37 will be described. The polishing mechanism 37 polishes the back surface of the substrate W. Fig. 6 is a side view showing the polishing mechanism 37. The polishing mechanism 37 includes a polishing tool 96 and a polishing tool moving mechanism (head driving mechanism) 97. The polishing tool moving mechanism 97 includes an attachment member 98, a shaft 100, and an arm 101.

[0061] The polishing tool (grinding tool) 96 polishes the back surface of the substrate W by a dry chemical mechanical grinding (CMG) method. The polishing tool 96 is formed in a cylindrical shape. The polishing tool 96 has a resin body in which abrasive grains are dispersed. In other words, the polishing tool 96 is formed by fixing abrasive grains (abrasive) with a resin binder. As the abrasive grains, for example, oxides such as cerium oxide or silica are used. The average particle size of the abrasive grains is preferably 10 μm or less. As the resin body and the resin binder, for example, a thermosetting resin such as an epoxy resin or a phenol resin is used. Also, as the resin body and the resin binder, a thermoplastic resin such as ethyl cellulose may be used. In this case, polishing is performed so that the thermoplastic resin does not soften.

[0062] Here, chemical mechanical grinding (CMG) will be explained. CMG is considered to perform grinding according to the following principle. That is, local high temperature and high pressure generated near the abrasive grains due to contact between the abrasive grains such as cerium oxide and the object causes a solid-phase reaction between the abrasive grains and the object, generating silicates. As a result, the surface layer of the object becomes soft, and the softened surface layer is mechanically removed by the abrasive grains. There is a method of polishing called CMP (Chemical Mechanical Polishing). This method is a method in which a slurry solution is supplied to a pad that is brought into contact with the object, and the abrasive grains contained in the slurry solution are held by the unevenness of the surface of the pad to perform chemical mechanical polishing. The present invention employs the CMG method.

[0063] The grinding tool 96 is detachably attached to the attachment member 98 by, for example, a screw. The attachment member 98 is fixed to the lower end of a shaft 100. A pulley 102 is fixed to the shaft 100. The upper end side of the shaft 100 is housed in an arm 101. That is, the grinding tool 96 and the attachment member 98 are attached to the arm 101 via the shaft 100.

[0064] An electric motor 104 and a pulley 106 are disposed within the arm 101. The pulley 106 is connected to the rotary output shaft of the electric motor 104. A belt 108 is wound around the two pulleys 102, 106. The pulley 106 is rotated by the electric motor 104. The rotation of the pulley 106 is transmitted to the pulley 102 and the shaft 100 by the belt 108. This causes the grinding tool 96 to rotate around the vertical axis AX5.

[0065] Furthermore, the grinding tool moving mechanism 97 includes a lifting mechanism 110. The lifting mechanism 110 includes a guide rail 111, an air cylinder 113, and an electro-pneumatic regulator 115. The base end of the arm 101 is connected to the guide rail 111 so as to be movable up and down. The guide rail 111 guides the arm 101 in the up and down direction. The air cylinder 113 lifts and lowers the arm 101. The electro-pneumatic regulator 115 supplies gas such as air at a pressure set based on an electric signal from a main control unit 165 (described later) to the air cylinder 113. The lifting mechanism 110 may include a linear actuator driven by an electric motor instead of the air cylinder 113.

[0066] Furthermore, the polishing tool moving mechanism 97 includes an arm rotating mechanism 117. The arm rotating mechanism 117 includes an electric motor. The arm rotating mechanism 117 rotates the arm 101 and the lifting mechanism 110 about a vertical axis AX6. That is, the arm rotating mechanism 117 rotates the polishing tool 96 about the vertical axis AX6.

[0067] The polishing unit 22 includes a substrate thickness measuring device 39. The substrate thickness measuring device 39 measures the thickness of the substrate W held by the holding / rotating unit 35. The substrate thickness measuring device 39 is configured to irradiate light having a wavelength range (for example, 1100 nm to 1900 nm) that is transparent to the substrate W from a light source to a mirror and the substrate W through an optical fiber. The substrate thickness measuring device 39 is also configured to detect, with a light receiving element, return light that is the result of interference between the reflected light from the mirror, the reflected light reflected from the upper surface of the substrate W, and the reflected light reflected from the lower surface of the substrate W. The substrate thickness measuring device 39 is configured to generate a spectral interference waveform that indicates the relationship between the wavelength and the light intensity of the return light, and to perform waveform analysis of the spectral interference waveform to measure the thickness of the substrate W. The substrate thickness measuring device 39 is a known device. The substrate thickness measuring device 39 may be configured to be moved between a standby position outside the substrate and a measurement position above the substrate W by a moving mechanism (not shown).

[0068] (1-2-2) Inspection Unit 20 7 is a side view showing the inspection unit 20. The inspection unit 20 includes a stage 121, an XY direction movement mechanism 122, a camera 124, an illumination device 125, a laser scanning confocal microscope 127, a lifting mechanism 128, and an inspection control unit .

[0069] The stage 121 supports the substrate W with its back surface facing upward and in a horizontal position. The stage 121 includes a disk-shaped base member 131 and, for example, six support pins 132. The six support pins 132 are provided in a ring shape around a central axis AX7 of the base member 131. The six support pins 132 are also arranged at equal intervals in the circumferential direction. With this configuration, the six support pins 132 can support the outer edge of the substrate W in a state in which the substrate W is spaced apart from the base member 131. The XY-direction moving mechanism 122 moves the stage 121 in the XY directions (horizontal directions). The XY-direction moving mechanism 122 includes, for example, two linear actuators each driven by an electric motor.

[0070] The camera 124 captures an image of the back surface of the substrate W. The camera 124 includes an image sensor such as a charge-coupled device (CCD) or a complementary metal-oxide semiconductor (CMOS). The illumination 125 irradiates the back surface of the substrate W with light. This makes it easier to observe, for example, scratches that have occurred on the back surface of the substrate W.

[0071] The laser scanning confocal microscope 127 is hereinafter referred to as the "laser microscope 127." The laser microscope 127 includes a confocal optical system having a laser light source, an objective lens 127A, an imaging lens, an optical sensor, and a confocal pinhole. The laser microscope 127 acquires a planar image by scanning the laser light source in the XY direction (horizontal direction). Furthermore, the laser microscope 127 acquires a planar image while moving the objective lens 127A in the Z direction (height direction) relative to the observation target. As a result, the laser microscope 127 acquires a three-dimensional image (a plurality of planar images) including a three-dimensional shape. The laser microscope 127 is referred to as a three-dimensional shape measuring device.

[0072] The laser microscope 127 acquires a three-dimensional image of any scratch that occurs on the rear surface of the substrate W. For example, a control unit, which will be described later, measures the depth of the scratch from the three-dimensional shape of the scratch in the acquired three-dimensional image. The lifting mechanism 128 raises and lowers the laser microscope 127 in the vertical direction (Z direction). The lifting mechanism 128 is composed of a linear actuator driven by an electric motor.

[0073] (1-2-3) Reversing units RV1 to RV4 8(a) to 8(d) are diagrams for explaining reversing units RV1 to RV4. The substrate processing apparatus 1 includes four reversing units RV1 to RV4 (see FIG. 2). Reversing unit RV1 has the same configuration as each of the three reversing units RV2 to RV4. Therefore, reversing unit RV1 will be described as a representative.

[0074] The reversing unit RV1 includes a support member 135, placement members 137A and 137B, clamping members 139A and 139B, a slide shaft 140, and a plurality of electric motors (not shown). The left and right support members 135 are provided with placement members 137A and 137B, respectively. The left and right slide shafts 140 are provided with clamping members 139A and 139B, respectively. The plurality of electric motors drive the support member 135 and the slide shaft 140. The placement members 137A and 137B and the clamping members 139A and 139B are provided at positions where they do not interfere with each other.

[0075] See Fig. 8(a). Substrates W transported by, for example, the indexer robot IR1 are placed on the placement members 137A, 137B. See Fig. 8(b). The left and right slide shafts 140 approach each other along the horizontal axis AX8. As a result, the clamping members 139A, 139B clamp the two substrates W. See Fig. 8(c). Thereafter, the left and right placement members 137A, 137B descend while moving away from each other. Thereafter, the clamping members 139A, 139B rotate 180° around the horizontal axis AX8. As a result, each substrate W is inverted.

[0076] See Fig. 8(d). Thereafter, the left and right mounting members 137A, 137B move upward while approaching each other. Then, the left and right slide shafts 140 move away from each other along the horizontal axis AX8. As a result, the two substrates W are released from the clamping members 139A, 139B, and the two substrates W are placed on the mounting members 137A, 137B. In Figs. 8(a) to 8(d), the reversing unit RV1 can reverse two substrates W, but the reversing unit RV1 may be configured to reverse three or more substrates W.

[0077] (1-3) Configuration of Coating Block B3 Please refer to Figures 1 to 3. The coating block B3 includes two coating layers 141A, 141B stacked vertically. The upper coating layer 141A is configured in a manner similar to the lower coating layer 141B. Therefore, the upper coating layer 141A will be described as a representative. The upper coating layer 141A includes a transport space 143, a substrate transport robot TR2, for example, four (multiple) liquid processing units U11, and multiple processing units U12.

[0078] The substrate transport robot TR2 is provided in the transport space 143. The substrate transport robot TR2 is configured similarly to the substrate transport robot TR1 in the polishing layer 14A. In the upper coating layer 141A, the substrate transport robot TR2 transports the substrate W among the reversing unit RV3, the substrate placement part PS3, the substrate buffer BF1, the four liquid processing units U11, and the multiple processing units U12.

[0079] As shown in Fig. 1, the four liquid processing units U11 and the multiple processing units U12 are arranged to sandwich a transport space 143. As shown in Fig. 3, the four liquid processing units U11 are arranged in two rows in the horizontal direction (X direction) and in two tiers in the vertical direction (Z direction). For example, when the coating layer 141A has 15 processing units U12, the 15 processing units U12 are arranged in three rows in the horizontal direction (X direction) and in five tiers in the vertical direction (Z direction).

[0080] As shown in FIG. 1 and FIG. 3, the liquid processing unit U11 includes a holding and rotating part 145, a nozzle 147, and a nozzle moving mechanism 149. The holding and rotating part 145 is configured to rotate the substrate W around a vertical axis while holding the substrate W in a horizontal position. The holding and rotating part 145 holds the substrate W by suctioning the lower surface of the substrate W, or by horizontally pinching the edge surface of the substrate W. The holding and rotating part 145 includes an electric motor for rotating the substrate W. The nozzle 147 ejects, for example, a resist liquid or a chemical liquid for forming an anti-reflection film. A pipe provided with an opening and closing valve is connected to the nozzle 147. The nozzle moving mechanism 149 moves the nozzle 147 to an arbitrary position. The nozzle moving mechanism 149 includes, for example, a linear actuator driven by an electric motor.

[0081] As the liquid processing unit U11, for example, a coating unit PR that coats a resist on the surface of the substrate W is used. In addition, as the liquid processing unit U11, for example, a coating unit BARC that forms an anti-reflection film may be used. In Fig. 3, two coating units BARC are arranged in the lower stage of the coating layer 141A. In addition, two coating units PR are arranged in the upper stage of the coating layer 141A.

[0082] As the processing unit U12, for example, a cooling section CP and a heating section PAB are used. The cooling section CP cools the substrate W. The heating section PAB performs a bake process on the substrate W after coating. The heating section PAB, the post-exposure bake section PEB (described later), and the post-bake section PB (described later) each have a cooling function. When the substrate W is heated, the processing unit U12 and the processing unit U22 described later each include, for example, a plate 151 on which the substrate W is placed and a heater (e.g., an electric heater). When the substrate W is cooled, the processing unit U12 and the processing unit U22 described later each include, for example, a water-cooled circulation mechanism or a Peltier element.

[0083] (1-4) Configuration of Development Block B4 Please refer to FIG. 1 to FIG. 3. The development block B4 includes two development layers 153A and 153B stacked vertically. The upper development layer 153A is configured almost the same as the lower development layer 153B. Therefore, the upper development layer 153A will be described as a representative. The upper development layer 153A includes a transport space 155, a substrate transport robot TR3, for example, four (multiple) liquid processing units U21, and multiple processing units U22. These components 155, TR3, U21, and U22 are arranged in the same manner as the components 143, TR2, U11, and U12 of the coating layer 141A.

[0084] The substrate transport robot TR3 is configured similarly to the substrate transport robot TR1 in the polishing layer 14 A. In the upper development layer 153A, the substrate transport robot TR3 transports the substrate W among the two substrate buffers BF1 and BF3, the four liquid processing units U21, and the multiple processing units U22.

[0085] A developing unit DEV is used as the liquid processing unit U21. The developing unit DEV performs a developing process on the substrate W exposed by the exposure device EXP. Like the liquid processing unit U11, the developing unit DEV includes a holding rotator 145, a nozzle 147, and a nozzle movement mechanism 149. The nozzle 147 ejects a developing solution onto the substrate W.

[0086] As the processing unit U22, for example, a cooling part CP, a post-bake part PB, and an edge exposure part EEW are used. The post-bake part PB performs a bake process on the substrate W after the development process. The edge exposure part EEW exposes the peripheral part of the substrate W to light.

[0087] (1-5) Configuration of interface block (IF block) B5 The IF block B5 loads and unloads the substrate W into and from the external exposure apparatus EXP. The IF block B5 includes three substrate transport robots TR4, TR5, and TR6, a plurality of back surface cleaning units BSS, a plurality of post-exposure bake processing units PEB, a substrate placement part PS9, and three placement / cooling parts P-CP.

[0088] Each of the three substrate transport robots TR4, TR5, and TR6 has the same configuration as the indexer robot IR1, except that it does not have a horizontal drive unit 12. The two substrate transport robots TR4 and TR5 are arranged along the Y direction. The developing block B4 and the substrate transport robot TR6 are arranged to sandwich the two substrate transport robots TR4 and TR5.

[0089] The substrate transport robot TR4 transports substrates W between two substrate buffers BF3, BF4, multiple back surface cleaning units BSS (on the side of arrow AR1), multiple post-exposure bake processing units PEB (on the side of arrow AR1), the substrate placement part PS9, and three placement / cooling parts P-CP.

[0090] The substrate transport robot TR5 transports the substrate W among the two substrate buffers BF3, BF4, the multiple back surface cleaning units BSS (on the side of the arrow AR2), the multiple post-exposure bake processing units PEB (on the side of the arrow AR2), the substrate placement part PS9, and the three placement / cooling parts P-CP. The substrate transport robot TR6 transports the substrate W among the external exposure apparatus EXP, the substrate placement part PS9, and the three placement / cooling parts P-CP.

[0091] The back surface cleaning unit BSS cleans the back surface of the substrate W with a cleaning liquid and a brush supplied to the back surface of the substrate W. The back surface cleaning unit BSS includes a holding and rotating part 157, a nozzle 159, a brush 161, and a brush moving mechanism 163 (see FIG. 3). The holding and rotating part 157 holds the substrate W with its front surface facing upward from above the substrate W. The holding and rotating part 157 holds the substrate W by holding the outer edge of the substrate W in a horizontal position. The back surface of the substrate W held by the holding and rotating part 157 faces downward.

[0092] The nozzle 159 supplies the cleaning liquid to the back surface of the substrate W. For example, a PVA (polyvinyl alcohol) sponge brush is used as the brush 161. The brush moving mechanism 163 moves the brush 161 in the horizontal and vertical directions, similar to the polishing tool moving mechanism 97 in Fig. 6. The brush moving mechanism 163 cleans the back surface of the substrate W by bringing the brush 161 into contact with the back surface of the substrate W that is being rotated and to which the cleaning liquid is supplied. The holding and rotating unit 157 and the brush moving mechanism 163 are equipped with electric motors.

[0093] The post-exposure bake part PEB performs a thermal process on the exposed substrate W. The substrate placement part PS9 and the three placement / cooling parts P-CP are stacked vertically. The substrate placement part PS9 and the three placement / cooling parts P-CP are disposed between the three substrate transport robots TR4 to TR6 in a plan view. The substrate placement part PS9 places the substrate W thereon. Each placement / cooling part P-CP places the substrate W thereon and cools the substrate W like the cooling part CP.

[0094] The number and types of the processing units U11, U12, U21, and U22 can be appropriately changed. The numbers of the back surface cleaning units BSS, the post-exposure bake processing units PEB, the substrate placement parts PS1 to PS4, PS9, and the placement / cooling parts P-CP can be appropriately changed.

[0095] In the lower polishing layer 14B, the substrate transport robot TR1 of the polishing layer 14B transports the substrate W between the two reversing units RV2, RV4, the two substrate placement parts PS2, PS4, and the eight (four units x two stages) processing units U1 to U4. In the lower coating layer 141B, the substrate transport robot TR2 of the coating layer 141B transports the substrate W between the reversing unit RV4, the substrate placement part PS4, the substrate buffer BF2, the four liquid processing units U11, and the multiple processing units U12. In the lower developing layer 153B, the substrate transport robot TR3 of the developing layer 153B transports the substrate W between the two substrate buffers BF2, BF4, the four liquid processing units U21, and the multiple processing units U22.

[0096] (1-6) Configuration for controlling the substrate processing apparatus 1 Returning to FIG. 1, the substrate processing apparatus 1 includes a main control unit 165 and a storage unit (not shown). The main control unit 165 controls each component. The main control unit 165 includes one or more processors, such as a central processing unit (CPU). The storage unit includes at least one of a read-only memory (ROM), a random-access memory (RAM), and a hard disk, for example. The storage unit stores computer programs and the like required to control each component of the substrate processing apparatus 1. The main control unit 165 is communicably connected to the inspection control unit 130 of the inspection unit 20 in the polishing block B2.

[0097] The polishing block B2 and the coating block B3, or the polishing block B2, the coating block B3 and the developing block B4 correspond to the processing blocks of the present invention that perform a predetermined processing on the substrate.

[0098] (2) Operation of the Substrate Processing Apparatus 1 Next, the operation of the substrate processing apparatus 1 will be described with reference to Fig. 1 etc. A carrier transport device (not shown) transports a carrier C to any one of four carrier mounting stages 3. At this time, the substrate W is stored in the carrier C with its front surface facing upward.

[0099] The indexer robot IR1 in the indexer block B1 takes out the substrate W from the carrier C transported to the carrier mounting table 3, and transports the taken-out substrate W to the reversing unit RV1. The reversing unit RV1 reverses the substrate W so that the back surface of the substrate W faces upward.

[0100] The polishing layer 14A above the polishing block B2 polishes the back surface of the substrate W. Details of the back surface polishing in the polishing layer 14A will be described later. The substrate transport robot TR1 of the polishing layer 14A transports the substrate W whose back surface has been polished to the reversing unit RV3. The reversing unit RV3 then reverses the substrate W so that the front surface of the substrate W faces upward.

[0101] Thereafter, in the upper coating layer 141A of the coating block B3, the substrate transport robot TR2 takes out the substrate W from the reversing unit RV3, and transports the substrate W in the following order: the cooling unit CP, the coating unit BARC, and the heating processor PAB. At this time, the coating unit BARC forms an anti-reflective film on the surface of the substrate W. Thereafter, the substrate transport robot TR2 receives the substrate W from the heating processor PAB, and transports the substrate W in the following order: the cooling unit CP, the coating unit PR, the heating processor PAB, and the substrate buffer BF1. At this time, the coating unit PR coats the surface of the substrate W with a resist. Specifically, the coating unit PR forms a resist film on the anti-reflective film.

[0102] Thereafter, in the upper development layer 153A of the development block B4, the substrate transport robot TR3 takes out the substrate W from the substrate buffer BF1, and transports the substrate W to the edge exposure unit EEW and then to the substrate buffer BF3, in that order.

[0103] Thereafter, for example, a substrate transport robot TR4 in the IF block B5 takes out the substrate W from the substrate buffer BF3 and transports the substrate W to the back surface cleaning unit BSS and the placement / cooling part P-CP in that order. Thereafter, a substrate transport robot TR6 in the IF block B5 takes out the substrate W from the placement / cooling part P-CP and transports the substrate W to an external exposure apparatus EXP. Thereafter, the exposure apparatus EXP irradiates, for example, EUV light to expose the resist applied to the front surface of the substrate W. At this time, the back surface of the substrate W has been polished by the polishing unit 22, so that the problem of defocus can be eliminated.

[0104] Thereafter, the substrate transport robot TR6 in the IF block B5 carries in the exposed substrate W from the external exposure apparatus EXP and transports the substrate W to the substrate platform PS9. Thereafter, for example, the substrate transport robot TR4 receives the exposed substrate W from the substrate platform PS9 and transports the substrate W to the post-exposure bake processor PEB and then to the substrate buffer BF3. The substrate transport robot TR5 in the IF block B5 transports the substrate W in the same manner as the substrate transport robot TR4.

[0105] Thereafter, in the developing layer 153A of the developing block B4, the substrate transport robot TR3 takes out the substrate W from the substrate buffer BF3, and transports the substrate W to the cooling part CP, the developing unit DEV, the post-bake part BP, and the substrate buffer BF1 in that order. At this time, the developing unit DEV performs a developing process on the substrate W.

[0106] Thereafter, in the coating layer 141A of the coating block B3, the substrate transport robot TR2 transports the substrate W from the substrate buffer BF1 to the substrate platform PS3. Thereafter, the substrate transport robot TR1 in the polishing layer 14A of the polishing block B2 transports the substrate W from the substrate platform PS3 to the substrate platform PS1. Thereafter, the indexer robot IR1 in the indexer block B1 receives the substrate W that has been subjected to the development process from the substrate platform PS1, and returns the substrate W to the carrier C placed on the carrier platform 3. Thereafter, a carrier transport device (not shown) transports the carrier C containing the processed substrate W to the next destination.

[0107] (2-1) Operation of the Polishing Block B2 (Polishing Layers 14A, 14B) Next, the details of back surface polishing by the polishing layer 14A of the polishing block B2 will be described with reference to Fig. 9. The polishing layer 14B operates in the same manner as the polishing layer 14A. The indexer robot IR1 of the indexer block B1 transports the substrate W to the reversing unit RV1. At this time, the device surface of the substrate W faces upward, and the back surface of the substrate W faces downward.

[0108] [Step S01] Reversing the substrate W When one or two substrates W are placed on the placement members 137A and 137B by the indexer robot IR1, as shown in Figures 8(a) to 8(d), the reversing unit RV1 reverses the one or two substrates W. As a result, the back surfaces of the substrates W face upward.

[0109] The substrate transport robot TR1 takes out the substrate W from the reversing unit RV1, and transports the substrate W to one of the two inspection units 20. The substrate W is placed with its back surface facing upward on the stage 121 of the inspection unit 20 shown in FIG.

[0110] [Step S02] Scratch observation The inspection unit 20 inspects the back surface of the substrate W. The inspection unit 20 detects scratches, particles, and other protrusions. In this embodiment, the case of detecting scratches formed on the back surface of the substrate W will be described in particular.

[0111] In the inspection unit 20 shown in FIG. 7, the illumination 125 irradiates light toward the rear surface of the substrate W. The camera 124 captures the rear surface of the substrate W irradiated with light to obtain an observation image. The camera 124 may capture the image while moving the stage 121 on which the substrate W is placed by the XY direction moving mechanism 122. The obtained observation image shows scratches of various sizes. The inspection control unit 130 performs image processing on the observation image, and extracts one or more scratches by determining that a portion with relatively strong reflected light, i.e., a portion having a brightness greater than a preset threshold value, is a polishing target. The inspection control unit 130 may also extract scratches of the polishing target based on the length of the scratch.

[0112] Furthermore, when a scratch is detected, the inspection unit 20 measures the depth of the scratch. For example, when a plurality of scratches are detected (extracted), the inspection unit 20 measures the depth of one or more representative scratches among them. The measurement of the scratch depth will be described.

[0113] The lifting mechanism 128 (FIG. 7) lowers the laser microscope 127 to a preset height position. In addition, the XY direction moving mechanism 122 moves the stage 121 so that the scratch to be measured is located below the objective lens 127A of the laser microscope 127. The movement of the stage 121 is performed based on the coordinates of the scratch extracted from the observation image. The laser microscope 127 irradiates the scratch (all or part) and its surroundings with laser light from the objective lens 127A, while collecting reflected light through the objective lens 127A. As a result, the laser microscope 127 obtains a three-dimensional image including a three-dimensional shape.

[0114] The inspection control unit 130 performs image processing on the three-dimensional image and measures the depth of the scratch. FIG. 10(a) is a vertical cross-sectional view for explaining the state of the substrate W before the etching process. In FIG. 10(a), for example, a thin film FL such as a silicon oxide film, a silicon nitride film, or polysilicon is formed on the back surface of the substrate W. Also, the scratch SH1 on the left side of FIG. 10(a) is assumed to reach the bare silicon BSi. In this case, the inspection control unit 130 measures the depth (value DP1) of the scratch SH1 from the three-dimensional image obtained by the laser microscope 127.

[0115] After observing scratches and the like, the substrate transport robot TR1 transports the substrate W from the stage 121 of the inspection unit 20 to any one of the six polishing units 22 (U2 to U4). The substrate W is placed on the holding and rotating part 35 of the polishing unit 22 with the back surface facing upward. Thereafter, a magnet (not shown) rotates the three holding pins 43A shown in FIG. 5(a) around the rotation axis AX4. As a result, the three holding pins 43A hold the substrate W. Here, the substrate W is held in a state separated from the spin base 41 and the hot plate 45.

[0116] Here, before the next wet etching step, the substrate thickness measuring device 39 measures the thickness of the substrate W. The thickness TK1 of the substrate W as shown in Fig. 10(a) is obtained.

[0117] [Step S03] Wet etching If a thin film such as a silicon oxide film, a silicon nitride film, or a polysilicon film is formed on the rear surface of the substrate W, the rear surface of the substrate W cannot be polished well by the polishing tool 96. Some of these films are formed unintentionally during the device manufacturing process, while others are formed intentionally to suppress warping of the substrate W. Therefore, the polishing unit 22 removes the film FL formed on the rear surface of the substrate W by supplying a first chemical liquid (etchant) to the rear surface of the substrate W.

[0118] 11 is a flow chart for explaining the details of the wet etching process in step S03. First, a process for removing the silicon oxide film and the silicon nitride film is performed (step S21).

[0119] Here, the gas discharge port 47 provided in the center of the spin base 41 discharges gas. That is, the gas discharge port 47 discharges gas in such a way that the gas flows from the center side of the substrate W to the outer edge of the substrate in the gap between the substrate W and the spin base 41. The device surface (front surface) of the substrate W faces the spin base 41. When the gas is discharged from the gas discharge port 47, the gas is ejected to the outside from the gap between the outer edge of the substrate W and the spin base 41. For example, liquids such as polishing debris and the first chemical liquid are prevented from adhering to the device surface of the substrate W. That is, the device surface can be protected. Also, a force that tries to attract the substrate W to the spin base 41 acts due to the Bernoulli effect.

[0120] Nozzle movement mechanism 95 moves first chemical liquid nozzle 65 from a standby position outside the substrate to an arbitrary processing position above substrate W. Holding and rotating unit 35 rotates substrate W while holding substrate W in a horizontal position. Thereafter, first chemical liquid nozzle 65 supplies a first chemical liquid (e.g., hydrofluoric acid) to the rear surface of substrate W that is rotating. This makes it possible to remove the silicon oxide film and silicon nitride film formed on the rear surface of substrate W.

[0121] The first chemical liquid may be supplied while horizontally moving first chemical liquid nozzle 65. After the supply of the first chemical liquid from first chemical liquid nozzle 65 is stopped, first chemical liquid nozzle 65 is moved to a standby position outside the substrate.

[0122] Thereafter, a rinsing process is performed (step S22). That is, a rinsing liquid (e.g., DIW or carbonated water) is supplied from the rinsing liquid nozzle 73 to the center of the rotating substrate W. This causes the first chemical liquid remaining on the back surface of the substrate W to be washed away from the substrate. Thereafter, a drying process is performed (step S23). That is, the supply of the rinsing liquid from the rinsing liquid nozzle 73 is stopped. Then, the holding rotation unit 35 rotates the substrate W at high speed to dry the substrate W. At this time, gas may be supplied to the back surface of the substrate W from the gas nozzle 75 moved above the substrate W. Note that the drying process may be performed by supplying gas from the gas nozzle 75 without rotating the substrate W at high speed.

[0123] After steps S21 to S23, a process for removing the polysilicon film is performed (step S24). The second chemical liquid nozzle 67 is moved from a standby position outside the substrate to an arbitrary processing position above the substrate W. The holding and rotating unit 35 rotates the substrate W at a preset rotation speed. Thereafter, the second chemical liquid nozzle 67 supplies a second chemical liquid (for example, a mixed liquid of hydrofluoric acid (HF) and nitric acid (HNO3)) to the rear surface of the rotating substrate W. This makes it possible to remove the polysilicon film formed on the rear surface of the substrate W.

[0124] The second chemical liquid may be supplied while horizontally moving second chemical liquid nozzle 67. Moreover, after the supply of the second chemical liquid from second chemical liquid nozzle 67 is stopped, second chemical liquid nozzle 67 is moved to a standby position outside the substrate.

[0125] Thereafter, substantially similarly to the case of the first chemical liquid (steps S22, S23), a rinsing process (step S25) is performed, and then a drying process (step S26) is performed. The holding and rotating part 35 stops rotating the substrate W.

[0126] [Step S04] Back surface polishing of substrate W After the wet etching process, the polishing unit 22 polishes the back surface of the substrate W. This polishing is performed when the inspection unit 20 detects, in particular, scratches on the back surface of the substrate W. A specific description will be given.

[0127] The holding and rotating unit 35 rotates the substrate W while holding it in a horizontal position. The arm rotation mechanism 117 (FIG. 6) of the polishing mechanism 37 rotates the polishing tool 96 and the arm 101 about a vertical axis AX6. This moves the polishing tool 96 from a standby position outside the substrate to a preset position above the substrate W. In addition, the electric motor 104 of the polishing mechanism 37 rotates the polishing tool 96 about the vertical axis AX5 (shaft 100).

[0128] Furthermore, the hot plate 45 generates heat when energized to heat the substrate W. The temperature of the substrate W is monitored by a non-contact temperature sensor 46. The main control unit 165 adjusts the heat generated by the hot plate 45 based on the temperature of the substrate W detected by the temperature sensor 46. The heating temperature of the substrate W is adjusted to a temperature higher than room temperature (e.g., 25° C.) in order to obtain a high polishing rate. However, it is preferably adjusted to 100° C. or lower in order to avoid thermal deterioration of the polishing tool 96.

[0129] Thereafter, the electropneumatic regulator 115 supplies gas at a pressure based on the electric signal to the air cylinder 113. This causes the air cylinder 113 to lower the polishing tool 96 and the arm 101, bringing the polishing tool 96 into contact with the rear surface of the rotating substrate W. The polishing tool 96 is pressed against the rear surface of the substrate W with a preset contact pressure. This performs polishing. When polishing is performed, the arm rotation mechanism 117 (FIG. 6) of the polishing mechanism 37 swings the polishing tool 96 and the arm 101 around the vertical axis AX6. That is, the polishing tool 96 repeatedly performs reciprocating motion between, for example, a position on the center side of the rear surface of the substrate W and a position on the outer edge side.

[0130] Regarding the amount of polishing in the thickness direction (Z direction) of the substrate W, even if scratches are present, polishing may seem unnecessary if the substrate W meets a preset flatness. However, there is a risk that the edges of the scratches may create new scratches on, for example, the stage of an exposure device. Therefore, polishing is performed until scratches of a preset size disappear.

[0131] As shown in FIG. 10(a), the depth (value DP1) of the scratch SH1 was acquired by the laser microscope 127. Therefore, the polishing unit 22 polishes the back surface of the substrate W until a thickness corresponding to the depth (value DP1) of the scratch SH1 measured by the laser microscope 127 is removed. The thickness corresponding to the depth of the scratch SH1 is the value DP1. Polishing is performed until the thickness of the substrate W reaches a value TK2 (=TK1-DP1). The thickness of the substrate W is periodically measured by the substrate thickness measuring device 39. The main control unit 165 compares the measured value of the substrate thickness with a target value (for example, value TK2), and controls to continue polishing if the measured value does not reach the target value.

[0132] FIG. 10(b) is a diagram showing the state after the etching process (step S03). When the film FL is removed by the etching process, the depth of the scratch SH1 becomes shallower. Therefore, the amount of polishing in the vertical direction decreases, but the substrate W is still polished to a thickness value TK2. FIG. 10(c) is a diagram showing the state after the polishing process (step S04). Note that the scratch SH2 shown in FIG. 10(a) does not reach the bare silicon. Such scratches are removed when the film FL, such as a silicon oxide film, is removed.

[0133] The substrate W is heated by the hot plate 45. Fig. 12 is a diagram showing the relationship between the heating temperature of the substrate W and the polishing rate. The contact pressure of the polishing tool 96 and the rotation speed of the substrate W are constant. Here, for example, compared to when the temperature of the substrate W is room temperature (e.g., 25°C), if the temperature TM2 of the substrate W is increased, the polishing rate increases. Therefore, by heating the substrate W by the hot plate 45, the polishing rate can be increased. As a result, the polishing process time can be shortened.

[0134] When polishing, the polishing unit 22 may adjust the polishing rate by controlling the heating temperature of the substrate W by the hot plate 45. The polishing rate can be increased or decreased by increasing or decreasing the heating temperature of the substrate W. The polishing rate may be adjusted before or during polishing. For example, the polishing rate can be made different between the center side and the outer edge side of the substrate W by changing the temperature of the substrate W between the center side and the outer edge side of the substrate W. The polishing tool 96 is moved to a standby position for the substrate W.

[0135] [Step S05] Cleaning of substrate W After the rear surface of the substrate W is polished, the rear surface of the substrate W is cleaned. This removes polishing debris (dust) remaining on the rear surface of the substrate W, as well as metals, organic matter, and particles. Figure 13 is a flowchart showing the details of the cleaning process in step S05.

[0136] First, a first cleaning liquid is supplied to the rear surface of the substrate W (step S31). A more detailed description will be given. The holding and rotating unit 35 continues to hold the substrate W. The holding and rotating unit 35 also continues to protect the device surface of the substrate W by discharging gas from the gas discharge port 47. The first cleaning liquid nozzle 69 is moved from a standby position outside the substrate to an arbitrary processing position above the substrate W. The holding and rotating unit 35 rotates the substrate W. Thereafter, the first cleaning liquid nozzle 69 supplies a first cleaning liquid (e.g., SC2 or SPM) to the rear surface of the rotating substrate W. The first cleaning liquid may be supplied while the first cleaning liquid nozzle 69 is moved horizontally.

[0137] After the first cleaning liquid is supplied and the cleaning process is performed, a rinsing process is performed (step S32). That is, a rinsing liquid (DIW or carbonated water) is supplied from the rinsing liquid nozzle 73 to the center of the rotating substrate W. This washes away the first cleaning liquid remaining on the rear surface of the substrate W. Then, a drying process is performed (step S33). That is, the supply of the rinsing liquid from the rinsing liquid nozzle 73 is stopped. Then, the holding rotation unit 35 dries the substrate W by rotating the substrate W at high speed. At this time, gas may be supplied to the rear surface of the substrate W from the gas nozzle 75 moved above the substrate W. The drying process may be performed by supplying gas from the gas nozzle 75 without rotating the substrate W at high speed.

[0138] After steps S31 to S33, a second cleaning liquid is supplied (step S34). That is, the second cleaning liquid nozzle 71 is moved from a standby position outside the substrate to an arbitrary processing position above the substrate W. The holding and rotating unit 35 rotates the substrate W at a preset rotation speed. Thereafter, the second cleaning liquid nozzle 71 supplies a second cleaning liquid (e.g., SC1) to the rear surface of the rotating substrate W.

[0139] The second cleaning liquid may be supplied while horizontally moving the second cleaning liquid nozzle 71. After the supply of the second cleaning liquid from the second cleaning liquid nozzle 71 is stopped, the second cleaning liquid nozzle 71 is moved to a standby position outside the substrate.

[0140] Thereafter, substantially similarly to the case of the first cleaning liquid (steps S32 and S33), a rinsing process (step S35) is performed, followed by a drying process (step S36). The holding and rotating part 35 stops the rotation of the substrate W. Since the polishing unit 22 in this embodiment has a cleaning function, the substrate W from which the polishing debris has been cleaned can be carried out from the polishing unit 22.

[0141] [Step S06] Reversing the substrate W The substrate transport robot TR1 takes out the substrate W from the polishing unit 22 and transports the substrate to the reversal unit RV3. At this time, the back surface of the substrate W faces upward, and the device surface of the substrate W faces downward. When one or two substrates W are placed on the placement members 137A, 137B by the substrate transport robot TR1, the reversal unit RV3 reverses one or two substrates W, as shown in Figs. 8(a) to 8(d). As a result, the back surfaces of the substrates W face downward.

[0142] Thereafter, the substrate transport robot TR2 of the coating layer 141A takes out the substrate W from the reversing unit RV3. The taken-out substrate W is coated with a resist by the coating layer 141A.

[0143] According to this embodiment, in the substrate processing apparatus 1, the polishing block B2, the coating block B3 and the developing block B4 are arranged in a horizontal direction. Such a substrate processing apparatus 1 includes a polishing unit 22 (a holding / rotating unit 35, a polishing tool 96 and a hot plate 45) and a coating unit PR. The polishing tool 96 has a resin body in which abrasive grains are dispersed. The polishing tool 96 comes into contact with the rear surface of the rotating substrate W and polishes the rear surface of the substrate W by a chemical mechanical grinding (CMG) method. When this polishing is performed, the substrate W is heated. When the substrate W is heated, the polishing rate can be increased. Therefore, the polishing process time can be shortened.

[0144] Furthermore, the polishing unit 22 and the coating unit PR coat the front surface of the substrate W with resist and polish the rear surface of the substrate W. This makes it possible to improve the flatness of the substrate coated with resist, thereby eliminating the defocus problem of the exposure apparatus.

[0145] Furthermore, the inspection unit 20 that inspects the substrate W detects scratches formed on the rear surface of the substrate W before polishing the rear surface of the substrate W. Furthermore, the polishing unit 22 polishes the rear surface of the substrate W when a scratch is detected. This makes it possible to remove the detected scratches, i.e., the selected scratches.

[0146] Furthermore, when a scratch is detected, the inspection unit 20 measures the depth of the scratch. The polishing unit 22 polishes the rear surface of the substrate W until a thickness corresponding to the depth of the scratch measured by the inspection unit 20 is removed. This allows the depth of the scratch to be recognized, so that the amount of polishing in the thickness direction of the substrate W can be appropriate.

[0147] Moreover, according to the substrate processing apparatus 1, the polishing tool 96 is brought into contact with the rear surface of the rotating substrate W, and the rear surface of the substrate W is polished by chemical mechanical polishing (CMG). Here, it has been found that if a film FL is formed on the rear surface of the substrate W, the polishing cannot be performed satisfactorily due to the film FL. Therefore, an etching process is performed before the polishing process to remove the film FL formed on the rear surface of the substrate W. This allows the polishing process to be performed satisfactorily. Example 2

[0148] Next, a second embodiment of the present invention will be described with reference to the drawings. Note that descriptions overlapping with those of the first embodiment will be omitted. Fig. 14 is a cross-sectional view of the substrate processing apparatus 1 according to the second embodiment. Fig. 15 is a right side view of the substrate processing apparatus 1 according to the second embodiment.

[0149] In the first embodiment, the substrate processing apparatus 1 includes the polishing block B2 having the polishing unit 22. In contrast, in the second embodiment, the substrate processing apparatus 1 does not include the polishing block B2, and the IF block B5 includes the polishing unit 22.

[0150] Please refer to Figures 14 and 15. The substrate processing apparatus 1 includes an indexer block B1, a coating block B3, a developing block B4, and an IF block B5. The indexer block B1, the coating block B3, the developing block B4, and the IF block B5 are arranged in a horizontal line in this order. The developing block B4 is arranged between the coating block B3 and the IF block B5. The coating block B3 and the developing block B4 correspond to the processing blocks of the present invention.

[0151] Each of the two developing layers 153A and 153B in the developing block B4 includes a cooling unit CP, a post-bake unit PB, and an edge exposure unit EEW, as well as a plurality of post-exposure bake units PEB as processing units U22. The substrate processing apparatus 1 also includes four substrate buffers BF1, BF2, BF7, and BF8, two reversing units RV7 and RV8, and substrate placement units PS11 and PS12. The two reversing units RV7 and RV8 and a reversing unit RV9, which will be described later, are configured similarly to the reversing unit RV1 shown in FIGS. 8(a) to 8(d).

[0152] The substrate buffer BF7 is provided between the indexer block B1 and the upper coating layer 141A. The substrate buffer BF8 is provided between the indexer block B1 and the lower coating layer 141B. The reversing unit RV7 and the substrate platform PS11 are disposed between the upper development layer 153A and the IF block B5. The reversing unit RV8 and the substrate platform PS12 are disposed between the lower development layer 153B and the IF block B5.

[0153] The IF block B5 includes three substrate transport robots TR4 to TR6, a substrate placement part PS9, and three placement / cooling parts P-CP. The IF block B5 further includes, for example, two (plural) inspection units 20, for example, six (plural) polishing units 22, and for example, two (plural) reversing units RV9. For example, a stack of one inspection unit 20 and three polishing units 22 is disposed on each of the substrate transport robot TR4 side and the substrate transport robot TR5 side.

[0154] 14, there is a center line CL that extends in the direction (X direction) in which the developing block B4 and the IF block B5 are lined up and passes through the center of the width of the apparatus 1 in the horizontal direction (Y direction) perpendicular to this direction. A first stack of polishing units 22, etc. on the side of arrow AR1 and the center line CL are arranged to sandwich a substrate transport robot TR4. A second stack of polishing units 22, etc. on the side of arrow AR2 and the center line CL are arranged to sandwich a substrate transport robot TR5.

[0155] The substrate transport robot TR4 transports the substrate W among the two reversing units RV7, RV8, the reversing unit RV9 (on the side of the arrow AR1), the three substrate placement parts PS9, PS11, PS12, the three placement / cooling parts P-CP, the inspection unit 20 (on the side of the arrow AR1), and the three polishing units 22 (on the side of the arrow AR1). The substrate transport robot TR5 transports the substrate W among the two reversing units RV7, RV8, the reversing unit RV9 (on the side of the arrow AR2), the three substrate placement parts PS9, PS11, PS12, the three placement / cooling parts P-CP, the inspection unit 20 (on the side of the arrow AR2), and the three polishing units 22 (on the side of the arrow AR2).

[0156] (3) Operation of the Substrate Processing Apparatus 1 Next, the operation of the substrate processing apparatus 1 of this embodiment will be described with reference to Figures 14 and 15. The carrier C is placed on one of the four carrier mounting stages 3. At this time, the substrate W is stored in the carrier C with its front surface facing upward.

[0157] In the indexer block B1, the indexer robot IR1 takes out the substrate W from the carrier C and transports the taken out substrate W, for example, to the substrate buffer BF7. Then, in the upper coating layer 141A of the coating block B3, the substrate transport robot TR2 takes out the substrate W from the substrate buffer BF7 and transports the substrate W to the coating unit BARC, the coating unit PR, etc. Then, the substrate transport robot TR2 transports the substrate W on which the anti-reflection film and the resist film are formed in this order, to the substrate buffer BF1.

[0158] Thereafter, in the upper developing layer 153A of the developing block B4, the substrate transport robot TR3 takes out the substrate W from the substrate buffer BF1, and transports the substrate W to the edge exposure unit EEW and then to the reversing unit RV7, in that order.

[0159] Thereafter, the substrate W is transported to the exposure apparatus EXP through the IF block B5. The operation here is carried out as shown in the flow chart of Fig. 9. A specific description will be given.

[0160] The reversing unit RV7 reverses the substrate W so that the back surface of the substrate W faces upward (step S01). Then, in the IF block B5, for example, the substrate transport robot TR4 takes out the substrate W from the reversing unit RV7 and transports the substrate W to the inspection unit 20, the polishing unit 22, and the reversing unit RV9 in that order. Here, the inspection unit 20 detects scratches on the back surface of the substrate W and measures the depth of the scratches (step S02). Then, the polishing unit 22 performs a wet etching process on the back surface of the substrate W (step S03).

[0161] Thereafter, the polishing unit 22 brings the polishing tool 96 into contact with the rotating substrate W while the substrate W is heated by the hot plate 45, and polishes the back surface of the substrate W by a chemical mechanical polishing (CMG) method (step S04). The back surface polishing is performed until the scratches are removed based on the depth of the scratches. Thereafter, the polishing unit 22 cleans the back surface of the substrate W (step S05). Thereafter, the reversing unit RV9 reverses the substrate W so that the front surface of the substrate W faces upward (step S06). The substrate transport robot TR4 transports the substrate W with the front surface facing upward from the reversing unit RV9 to the placement and cooling part P-CP.

[0162] Thereafter, in the IF block B5, the substrate transport robot TR6 takes out the substrate W from the placement and cooling part P-CP, and carries the substrate W out to an external exposure apparatus EXP. Thereafter, the exposure apparatus EXP irradiates the substrate W with, for example, EUV light to expose the resist applied to the surface of the substrate W.

[0163] Thereafter, in IF block B5, the substrate transport robot TR6 carries in the exposed substrate W from the external exposure apparatus EXP and transports the substrate W to the substrate platform PS9. Thereafter, for example, the substrate transport robot TR4 transports the exposed substrate W from the substrate platform PS9 to, for example, the substrate platform PS11.

[0164] Thereafter, in the developing layer 153A of the developing block B4, the substrate transport robot TR3 takes out the substrate W from the substrate rest part PS11, and transports the substrate W to the post-exposure bake part PEB, the cooling part CP, the developing unit DEV, the post-bake part BP, and the substrate buffer BF1 in this order.

[0165] Thereafter, in coating layer 141A of coating block B3, the substrate transport robot TR2 transports the substrate W from base substrate buffer BF1 to substrate buffer BF7. Thereafter, in indexer block B1, the indexer robot IR1 receives the substrate W that has been subjected to the development process from substrate buffer BF7 and returns the substrate W to the carrier C placed on the carrier mounting table 3.

[0166] This embodiment has the same effects as those of the first embodiment. That is, in the substrate processing apparatus 1, the coating block B3, the developing block B4, and the IF block B5 are arranged in a horizontal direction. In such a substrate processing apparatus 1, the IF block B5 includes a polishing unit 22 (a holding and rotating unit 35, a polishing tool 96, and a hot plate 45). Also, the coating block B3 includes a coating unit PR. The polishing tool 96 has a resin body in which abrasive grains are dispersed. The polishing tool 96 contacts the rear surface of the rotating substrate W and polishes the rear surface of the substrate W by a chemical mechanical grinding (CMG) method. When this polishing is performed, the substrate W is heated. When the substrate W is heated, the polishing rate can be increased. Therefore, the polishing process time can be shortened.

[0167] Furthermore, the polishing unit 22 and the coating unit PR coat the front surface of the substrate W with resist and polish the rear surface of the substrate W. This makes it possible to improve the flatness of the substrate coated with resist, thereby eliminating the defocus problem of the exposure apparatus. Example 3

[0168] Next, a third embodiment of the present invention will be described with reference to the drawings. The description overlapping with the first and second embodiments will be omitted. FIG. 16 is a vertical cross-sectional view of the substrate processing apparatus 1 according to the third embodiment. FIG. 17 is a right side view of the substrate processing apparatus 1 according to the third embodiment. FIG. 18 is a cross-sectional view of the substrate processing apparatus 1 (e.g., the polishing layer L3) according to the third embodiment. FIG. 19(a) is a cross-sectional view of, for example, the coating layer L1 according to the third embodiment. FIG. 19(b) is a cross-sectional view of, for example, the developing layer L5 according to the third embodiment.

[0169] In Example 1, the polishing block B2, the coating block B3, and the developing block B4 were arranged side by side in the horizontal direction. In contrast, in Example 3, in a single processing block B8, the coating layers L1 and L2, the polishing layers L3 and L4, and the developing layers L5 and L6 were arranged in a vertically stacked manner.

[0170] (4) Configuration of the Substrate Processing Apparatus 1 16 to 18, the substrate processing apparatus 1 includes an indexer block B1, an intermediate block B7, a processing block B8, and an IF block B5. The indexer block B1, the intermediate block B7, the processing block B8, and the IF block B5 are linearly arranged in this order in the horizontal direction.

[0171] (4-1) Configuration of indexer block B1 The indexer block B1 is configured in a similar manner to the indexer block B1 of the first embodiment. The indexer block B1 includes, for example, four (a plurality of) carrier mounting stages 3, and an indexer robot IR1. The indexer robot IR1 puts and takes out a substrate W into and from a carrier C mounted on each carrier mounting stage 3. The indexer robot IR1 also transports the substrate W between the carrier C mounted on each carrier mounting stage 3 and a substrate buffer BF11, which will be described later. The indexer robot IR1 also transports the substrate W between the processing block B8 via a buffer group G1 (including the substrate buffer BF11), which will be described later.

[0172] (4-2) Configuration of intermediate block B7 The intermediate block B7 includes a tower-shaped buffer group G1 and two substrate transport robots TR8 and TR9 (see FIG. 18). The buffer group G1 is disposed between the two substrate transport robots TR8 and TR9 in a plan view (see FIG. 18). The buffer group G1 is also disposed between the indexer robot IR1 and transport spaces 167, 169, and 171, which will be described later, in a plan view.

[0173] Buffer group G1 comprises seven substrate buffers BF11, BF13, BF14, BF15, BF16, BF21, BF22 and a reversing unit RV31 (see FIG. 17). These are arranged in a vertical direction. The seven substrate buffers BF11, BF13 to BF16, BF21, BF22 mount one or more substrates W. Reversing unit RV31 and reversing unit RV32, which will be described later, are configured similarly to reversing unit RV1 shown in FIG. 8.

[0174] The two substrate transport robots TR8 and TR9 are configured similarly to, for example, the substrate transport robot TR4 in the IF block B5. Each of the two substrate transport robots TR8 and TR9 can transport substrates W between seven substrate buffers BF11, BF13, BF14, BF15, BF16, BF21, and BF22 and the reversing unit RV31.

[0175] (4-3) Configuration of processing block B8 The processing block B8 performs a predetermined process on the substrate W. The processing block B8 includes, for example, six (plural) processing layers L1 to L6. That is, the processing block B8 includes two coating layers L1, L2, two polishing layers L3, L4, and two developing layers L5, L6. The six processing layers L1 to L6 are stacked vertically. The coating layer L1 is configured similarly to the coating layer L2. The polishing layer L3 is configured similarly to the polishing layer L4. The developing layer L5 is configured similarly to the developing layer L6. Therefore, the coating layer L1, the polishing layer L3, and the developing layer L5 will be described as representatives.

[0176] (4-3-1) Configuration of Coating Layer L1 (L2) 19(a), the coating layer L1 includes a transport space 167, a substrate transport robot TR10, a plurality of liquid processing units U11, and a processing unit U12. The substrate transport robot TR10 is disposed in the transport space 167. The substrate transport robot TR10 and substrate transport robots TR11 and TR12 described below are configured similarly to the substrate transport robot TR1 shown in FIG.

[0177] See Figures 17 and 19(a). The substrate transport robot TR10 for the coating layer L1 transports the substrate W between the substrate buffer BF13, for example, four (multiple) liquid processing units U11 (in the coating layer L1), and multiple processing units U12 (in the coating layer L1). The substrate transport robot TR10 for the coating layer L2 transports the substrate W between the substrate buffer BF14, for example, four (multiple) liquid processing units U11 (in the coating layer L2), and multiple processing units U12 (in the coating layer L2).

[0178] As the liquid processing unit U11, for example, a coating unit PR that coats a resist on the surface of the substrate W is used (see FIG. 17). In addition to this, as the liquid processing unit U11, for example, a coating unit BARC that forms (coats) an anti-reflection film may be used. As the processing unit U12, for example, a cooling unit CP, a heating processor PAB, and an edge exposure unit EEW are used (see FIG. 19(a)).

[0179] (4-3-2) Configuration of the polishing layer L3 (L4) 18, the polishing layer L3 includes a transport space 169, a substrate transport robot TR11, and, for example, eight (a plurality of) processing units U31. The substrate transport robot TR11 is disposed in the transport space 169.

[0180] See Figures 17 and 18. The substrate transport robot TR11 in the polishing layer L3 transports substrates W between two substrate buffers BF15, BF17 and eight processing units U31 (in the polishing layer L3). The substrate transport robot TR11 in the polishing layer L4 transports substrates W between two substrate buffers BF16, BF18 and eight processing units U31 (in the polishing layer L4). Two inspection units 20 and six polishing units 22 are used as the eight processing units U31.

[0181] (4-3-3) Structure of development layer L5 (L6) 19(b), the development layer L5 includes a transport space 171, a substrate transport robot TR12, for example, four (a plurality of) liquid processing units U21, and a plurality of processing units U22. The substrate transport robot TR12 is disposed in the transport space 171.

[0182] See Figures 17 and 19(b). The substrate transport robot TR12 in the development layer L5 transports the substrate W between the two substrate buffers BF19 and BF21, the four liquid processing units U21 (in the development layer L5), and the multiple processing units U22 (in the development layer L5). The substrate transport robot TR12 in the development layer L6 transports the substrate W between the two substrate buffers BF20 and BF22, the four liquid processing units U21 (in the development layer L6), and the multiple processing units U22 (in the development layer L6).

[0183] A developing unit DEV is used as the liquid processing unit U21. Furthermore, for example, a post-exposure bake processing section PEB, a cooling section CP, and a post-bake section PB are used as the processing unit U22.

[0184] (4-4) Configuration of IF block B5 16 to 18. The IF block B5 includes a tower-shaped buffer group G2 in addition to the three substrate transport robots TR4 to TR6. The buffer group G2 is disposed between the two substrate transport robots TR4 and TR5 in a plan view. The buffer group G2 is also disposed between the transport spaces 167, 169, and 171 and the substrate transport robot TR6 in a plan view.

[0185] Buffer group G2 comprises four substrate buffers BF17, BF18, BF19, BF20, a reversing unit RV32, a substrate platform PS9, and three placement / cooling parts P-CP (see FIG. 17). These are arranged in a vertical direction. The four substrate buffers BF17 to BF20 place one or more substrates W on them.

[0186] Each of the two substrate transport robots TR4 and TR5 can transport a substrate W between the four substrate buffers BF17, BF18, BF19, and BF20, the reversing unit RV32, the substrate placement part PS9, and the three placement / cooling parts P-CP. The substrate transport robot TR6 can transport a substrate W between the exposure apparatus EXP, the substrate placement part PS9, and the three placement / cooling parts P-CP.

[0187] (5) Operation of the Substrate Processing Apparatus 1 Next, the operation of the substrate processing apparatus 1 of the third embodiment will be described with reference to Fig. 16 to Fig. 19(b). The carrier C is placed on any one of the four carrier placement stages 3. At this time, the substrate W is stored in the carrier C with its front surface facing upward.

[0188] In the indexer block B1, the indexer robot IR1 takes out a substrate W from a carrier C placed on the mounting table 3, and transports the taken out substrate W to a substrate buffer BF11 in the buffer group G1. In the intermediate block B7, one of the two substrate transport robots TR8, TR9 transports the substrate W from the substrate buffer BF11 to the substrate buffer BF13 (or substrate buffer BF14) (see Figures 17 and 18). In this description, it is the substrate transport robot TR8 that transports the substrate in the intermediate block B7.

[0189] In the lower coating layer L1, the substrate transport robot TR10 takes out the substrate W from the substrate buffer BF13, and transports the substrate W in the order of the cooling part CP, the coating unit BARC, and the heating part PAB. Thereafter, the substrate transport robot TR10 takes out the substrate W from the heating part PAB, and transports the substrate W in the order of the cooling part CP, the coating unit PR, the heating part PAB, the edge exposure part EEW, and the substrate buffer BF13.

[0190] When the substrate W is transported to the substrate buffer BF14 by the substrate transport robot TR8, the upper coating layer L2, like the lower coating layer L1, coats the surface of the substrate W with resist. The coating layer L2 transports the resist-coated substrate W to the substrate buffer BF14.

[0191] In the intermediate block B7, the substrate transport robot TR8 transports the substrate W coated with resist from the substrate buffer BF13 (or the substrate buffer BF14) to the reversing unit RV31. The reversing unit RV31 then reverses the substrate W so that the back surface faces upward. The substrate transport robot TR8 then transports the substrate W from the reversing unit RV31 to the substrate buffer BF15 (or the substrate buffer BF16).

[0192] Thereafter, the polishing layer L3 (L4) performs the operations of step S02 (scratch observation) to step S05 (substrate cleaning) in the flowchart of Fig. 9. The operations will be outlined below. In the lower polishing layer L3, the substrate transport robot TR11 takes out the substrate W from the substrate buffer BF15, and transports the substrate W to the inspection unit 20 and the polishing unit 22 in that order. At that time, the inspection unit 20 detects scratches on the back surface of the substrate W and measures the depth of the scratches (step S02). Thereafter, the polishing unit 22 performs wet etching on the back surface of the substrate W (step S03).

[0193] Thereafter, the polishing unit 22 heats the substrate W with the hot plate 45, and brings the polishing tool 96 into contact with the rotating substrate W to polish the back surface of the substrate W by chemical mechanical polishing (CMG) (step S04). The back surface is polished until the scratches are removed based on the depth of the scratches. Thereafter, the polishing unit 22 cleans the back surface of the substrate W (step S05). Thereafter, the substrate transport robot TR11 of the lower polishing layer L3 removes the substrate W from the polishing unit 22, and transports the substrate W to the substrate buffer BF17 of the buffer group G2.

[0194] When the substrate W is transported to the substrate buffer BF16 by the substrate transport robot TR8, the upper polishing layer L4 polishes the back surface of the substrate W, similarly to the lower polishing layer L3. The polishing layer L4 transports the substrate W whose back surface has been polished to the substrate buffer BF18 of the buffer group G2.

[0195] Thereafter, in IF block B5, one of the two substrate transport robots TR4, TR5 transports the substrate W from substrate buffer BF17 (or substrate buffer BF18) to reversing unit RV32. In this description, the substrate transport robot TR4 transports the substrate at two height positions in the buffer group G2. The reversing unit RV32 reverses the substrate W so that its front surface faces upward. Thereafter, the substrate transport robot TR4 transports the substrate W with its front surface facing upward from the reversing unit RV32 to one of the three placement and cooling parts P-CP.

[0196] Thereafter, the substrate transport robot TR6 in the IF block B5 takes out the substrate W from the placement / cooling part P-CP, and transports the substrate W to the external exposure apparatus EXP. The exposure apparatus EXP performs exposure processing on the substrate W. The substrate transport robot TR6 then transports the substrate W that has been subjected to exposure processing from the exposure apparatus EXP, and transports the substrate W to the substrate placement part PS9. Thereafter, the substrate transport robot TR4 in the IF block B5 transports the substrate W from the substrate placement part PS9 to the substrate buffer BF19 (or substrate buffer BF20).

[0197] Thereafter, in the lower development layer L5, the substrate transport robot TR12 takes out the substrate W from the substrate buffer BF19, and transports the substrate W to the post-exposure bake part PEB, the cooling part CP, the developing unit DEV, the post-bake part PB, and the substrate buffer BF21 in that order.

[0198] When the substrate W is transported to the substrate buffer BF20 by the substrate transport robot TR4, the upper development layer L6 performs development processing on the substrate W, similar to the lower development layer L5. The development layer L6 transports the substrate W that has been subjected to the development processing to the substrate buffer BF22.

[0199] Thereafter, in intermediate block B7, substrate transport robot TR8 transports substrate W from substrate buffer BF21 (or substrate buffer BF22) to substrate buffer BF11. Thereafter, in indexer block B1, indexer robot IR1 takes out substrate W from substrate buffer BF11 and returns the substrate W to carrier C placed on carrier mounting table 3.

[0200] This embodiment has the same effect as the first embodiment. That is, in the processing block B8 of the substrate processing apparatus 1, the polishing layers L3, L4, the coating layers L1, L2, and the developing layers L5, L6 are stacked vertically. Such a substrate processing apparatus 1 includes a polishing unit 22 (a holding and rotating unit 35, a polishing tool 96, and a hot plate 45) and a coating unit PR. The polishing tool 96 has a resin body in which abrasive grains are dispersed. The polishing tool 96 contacts the rear surface of the rotating substrate W and polishes the rear surface of the substrate W by a chemical mechanical grinding (CMG) method. When this polishing is performed, the substrate W is heated. When the substrate W is heated, the polishing rate can be increased. Therefore, the polishing process time can be shortened.

[0201] Furthermore, the polishing unit 22 and the coating unit PR coat the front surface of the substrate W with resist and polish the rear surface of the substrate W. This makes it possible to improve the flatness of the substrate coated with resist, thereby eliminating the defocus problem of the exposure apparatus.

[0202] Furthermore, an intermediate block B7 is disposed between the indexer block B1 and the processing block B8. The intermediate block B7 includes a buffer group G1 and two substrate transport robots TR8 and TR9. The buffer group G1 includes a plurality of substrate buffers (e.g., reference symbols BF13 and BF15) arranged in a vertical direction. Each of the two substrate transport robots TR8 and TR9 transports substrates W between the plurality of substrate buffers (e.g., reference symbols BF13 and BF15) of the buffer group G1, so that the transport of substrates W can be performed efficiently on the indexer block B1 side.

[0203] (6) Modification of the third embodiment In the above description, the substrate W is transported to the coating layer L1 (L2) and then to the polishing layer L3 (L4). As a result, the polishing layer L3 (L4) polishes the back surface of the substrate W that has been resist-coated by the coating layer L1 (L2). In this regard, the substrate W may be transported to the coating layer L1 (L2) and then to the polishing layer L3 (L4). As a result, the coating layer L1 (L2) applies resist to the front surface of the substrate W that has been back-polished by the polishing layer L3 (L4). In this case, the arrangement and number of the substrate buffer (e.g., reference symbol BF13) and the reversing units RV31, RV32, etc. may be appropriately changed.

[0204] In the above description, the processing block B8 includes two polishing layers L3 and L4. In this regard, the polishing unit 22 may be provided in the IF block B5 as shown in Figures 14 and 15. The order in which the processing layers L1 to L6 are stacked may be changed as appropriate.

[0205] In the above description, the intermediate block B7 is provided with two substrate transport robots TR8 and TR9 as shown in Fig. 18. In this regard, the intermediate block B7 may be provided with only one of the two substrate transport robots TR8 and TR9.

[0206] In the above description, an intermediate block B7 is disposed between the indexer block B1 and the processing block B8, as shown in Fig. 16. Alternatively, the indexer block B1 may be directly connected to the processing block B8, as shown in Fig. 20. In this case, for example, a substrate buffer BF24 is provided between the indexer block B1 and each of the four processing layers L1, L2, L5, and L6. A reversing unit RV31 may be provided between the indexer block B1 and the two polishing layers L3 and L4. Example 4

[0207] Next, a fourth embodiment of the present invention will be described with reference to the drawings. The description overlapping with the first to third embodiments will be omitted. Fig. 21 is a vertical cross-sectional view of the substrate processing apparatus 1 according to the fourth embodiment. Fig. 22 is a right side view of the substrate processing apparatus 1 according to the fourth embodiment. Fig. 23 is a horizontal cross-sectional view of the upper layer of the substrate processing apparatus 1 according to the fourth embodiment. Fig. 24 is a horizontal cross-sectional view of the lower layer of the substrate processing apparatus 1 according to the fourth embodiment.

[0208] In the first embodiment, the processing blocks (polishing block B2, coating block B3, and developing block B4) are disposed between the indexer block B1 and the IF block B5. In this regard, in the fourth embodiment, the first processing block B9 and the second processing block B10 are disposed so as to sandwich the indexer block B1 therebetween.

[0209] (7) Configuration of the substrate processing apparatus 1 21 to 24, the substrate processing apparatus 1 includes an indexer block B1, a first processing block B9, a second processing block B10, and an IF block B5. The first processing block B9, the indexer block B1, the second processing block B10, and the IF block B5 are arranged linearly in this order in the horizontal direction.

[0210] (7-1) Configuration of indexer block B1 The indexer block B1 includes four carrier mounting stages 173, 174, two substrate buffers BF31, BF32, and two indexer robots IR2, IR3. The four carrier mounting stages 173, 174 are arranged in pairs in the horizontal direction (Y direction) and in two stages in the vertical direction (Z direction). The four carrier mounting stages 173, 174 are arranged on the outer side surfaces of the housing 5. The four carrier mounting stages 173, 174 are also arranged above the first processing block B9.

[0211] Each of the two substrate buffers BF31, BF32 places one or more substrates W thereon. The two substrate buffers BF31, BF32 are arranged vertically. The two substrate buffers BF31, BF32 are arranged inside a housing 5.

[0212] The two indexer robots IR2 and IR3 are arranged side by side in the Y direction. The two indexer robots IR2 and IR3 are configured similarly to the substrate transport robot TR4. The two indexer robots IR2 and IR3 each transfer a substrate W to and from a carrier C placed on each of the carrier placement stages 173 and 174.

[0213] Furthermore, the indexer robot IR2 transports substrates W between the carriers C on the two carrier placement stages 173 and the two substrate buffers BF31, BF32. In contrast, the indexer robot IR3 transports substrates W between the carriers C on the two carrier placement stages 174 and the two substrate buffers BF31, BF32.

[0214] (7-2) Configuration of first processing block B9 The first processing block B9 includes one polishing layer 175. The polishing layer 175 includes a transport space 177, a substrate transport robot TR14, and, for example, eight (a plurality of) processing units U32.

[0215] The substrate transport robot TR14 is disposed in the transport space 177. The substrate transport robot TR14 and two substrate transport robots TR15 and TR16 described below are each configured similarly to the substrate transport robot TR1 shown in Fig. 1. The substrate transport robot TR14 transports substrates between the substrate buffer BF31 and eight processing units U32. As the eight processing units U32, for example, two reversing units RV41 and RV42, two inspection units 20, and four polishing units 22 are used.

[0216] (7-3) Configuration of second processing block B10 The second processing block B10 includes a coating layer 179 and a developing layer 180. The coating layer 179 and the developing layer 180 are stacked in the vertical direction. The developing layer 180 is disposed on the coating layer 179.

[0217] The coating layer 179 includes a transport space 181, a substrate transport robot TR15, for example, four (a plurality of) liquid processing units U11, and a plurality of processing units U12. The substrate transport robot TR15 is disposed in the transport space 181. The substrate transport robot TR15 transports substrates W between the substrate buffers BF31 and BF4, the four liquid processing units U11, and the plurality of processing units U12.

[0218] As the four liquid processing units U11, for example, two coating units PR and two coating units BARC are used (see FIG. 22 and FIG. 24). As the multiple processing units U12, for example, a cooling unit CP, a heating process unit PAB, and an edge exposure unit EEW are used (see FIG. 24).

[0219] The development layer 180 includes a transport space 182, a substrate transport robot TR16, for example, four liquid processing units U21, and a plurality of processing units U22. The substrate transport robot TR16 is disposed in the transport space 182. The substrate transport robot TR16 transports substrates W between the substrate buffers BF32 and BF3, the four liquid processing units U21, and the plurality of processing units U22.

[0220] As the four liquid processing units U21, for example, four developing units DEV are used (see FIGS. 22 and 23). As the multiple processing units U22, for example, a cooling unit CP and a post-bake unit PB are used (see FIG. 23).

[0221] (7-4) Configuration of IF block B5 The IF block B5 is connected to the second processing block B10 in the horizontal direction. The IF block B5 also loads and unloads the substrate W into and from the external exposure apparatus EXP. The IF block B5 of the fourth embodiment is configured in a manner similar to that of the IF block B5 shown in FIG. 1. That is, the IF block B5 includes three substrate transport robots TR4 to TR6, a plurality of back surface cleaning units BSS, a plurality of post-exposure bake processing units PEB, a substrate placement part PS9, and three placement / cooling parts P-CP. The IF block B5 does not necessarily need to include the back surface cleaning unit BSS, if necessary.

[0222] (8) Operation of the Substrate Processing Apparatus 1 21 to 24, the operation of the substrate processing apparatus 1 of the fourth embodiment will be described. In this description, the back surface is polished and then resist is applied. The carrier C is placed on one of the four carrier placement stages 173, 174. At this time, the substrate W is stored in the carrier C with the front surface facing upward.

[0223] In the indexer block B1, for example, the indexer robot IR2 takes out the substrate W from the carrier C placed on the carrier mounting table 173, and transports the taken-out substrate W to the substrate buffer BF31. Then, in the polishing layer 175 of the first processing block B9, the substrate transport robot TR14 takes out the substrate W from the substrate buffer BF31, and transports the substrate W to the reversing unit RV41. Then, the reversing unit RV41 reverses the substrate W so that the back surface faces upward.

[0224] Thereafter, the polishing layer 175 performs the operations of step S02 (scratch observation) to step S05 (substrate cleaning) in the flowchart of Fig. 9. The operations will be outlined below. The substrate transport robot TR14 of the polishing layer 175 takes out the substrate W from the reversing unit RV41, and transports the substrate W to the inspection unit 20 and the polishing unit 22, in that order. At that time, the inspection unit 20 detects scratches on the rear surface of the substrate W, and measures the depth of the scratches (step S02). Thereafter, the polishing unit 22 performs wet etching on the rear surface of the substrate W (step S03).

[0225] Thereafter, the polishing unit 22 brings the polishing tool 96 into contact with the rotating substrate W while heating the substrate W with the hot plate 45, and polishes the back surface of the substrate W by a chemical mechanical polishing (CMG) method (step S04). The back surface polishing is performed until the scratches are removed based on the depth of the scratches. Thereafter, the polishing unit 22 cleans the back surface of the substrate W (step S05). Thereafter, the substrate transport robot TR14 takes out the substrate W from the polishing unit 22, and transports the substrate W to the reversing unit RV42 and the substrate buffer BF31 in that order. At that time, the reversing unit RV42 reverses the substrate W so that the front surface faces upward.

[0226] In the coating layer 179 of the second processing block B10, the substrate transport robot TR15 takes out the substrate W whose back surface has been polished from the substrate buffer BF31, and transports the substrate W to the cooling part CP, the coating unit BARC, and the heating part PAB, in that order. Thereafter, the substrate transport robot TR15 takes out the substrate W from the heating part PAB, and transports the substrate W to the cooling part CP, the coating unit PR, the heating part PAB, the edge exposure part EEW, and the substrate buffer BF4, in that order. At this time, the coating unit PR coats the front surface of the substrate W with resist.

[0227] In the IF block B5, for example, the substrate transport robot TR4 takes out the resist-coated substrate W from the substrate buffer BF4, and transports the substrate W to the back surface cleaning unit BSS and the placement / cooling part P-CP in that order. Then, the substrate transport robot TR6 in the IF block B5 takes out the substrate W from the placement / cooling part P-CP, and transports the substrate W to the external exposure apparatus EXP. The exposure apparatus EXP performs exposure processing on the resist-coated substrate W. The substrate transport robot TR6 takes in the exposed substrate W from the exposure apparatus EXP, and transports the substrate to the substrate placement part PS9. Then, the substrate transport robot TR4 transports the substrate W from the substrate placement part PS9 to the substrate buffer BF3.

[0228] In the development layer 180 of the second processing block B10, the substrate transport robot TR16 takes out the exposed substrate W from the substrate buffer BF3, and transports the substrate W in the following order: the post-exposure bake processing section PEB, the cooling section CP, the development unit DEV, the post-bake section PB, and the substrate buffer BF32.

[0229] In the indexer block B1, the indexer robot IR2 takes out the substrate W from the substrate buffer BF32, and returns the substrate W to the carrier C placed on the carrier placement table 173.

[0230] This embodiment has the same effects as the first embodiment. That is, in the substrate processing apparatus 1, the first processing block B9, the indexer block B1, and the second processing block B10 are arranged in a horizontal line in this order. Such a substrate processing apparatus 1 includes a polishing unit 22 (a holding and rotating unit 35, a polishing tool 96, and a hot plate 45) and a coating unit PR. The polishing tool 96 has a resin body in which abrasive grains are dispersed. The polishing tool 96 contacts the rear surface of the rotating substrate W and polishes the rear surface of the substrate W by a chemical mechanical grinding (CMG) method. When this polishing is performed, the substrate W is heated. When the substrate W is heated, the polishing rate can be increased. Therefore, the polishing process time can be shortened.

[0231] (9) Modification of the fourth embodiment The IF block B5 of the substrate processing apparatus 1 shown in FIG. 22 is horizontally connected to a second processing block B10 having a coating unit PR. In this regard, as shown in FIG. 25, the IF block B5 may be horizontally connected to a first processing block B9 having a polishing unit 22. In this case, the developing layer 180 is provided in the first processing block B9, not in the second processing block B10. In FIG. 25, the polishing layer 175 and the developing layer 180 are stacked in the vertical direction. The developing layer 180 is disposed on the polishing layer 175.

[0232] The operation of the substrate processing apparatus 1 shown in FIG. 25 will be briefly described. In this description, the back surface is polished after resist coating. First, the substrate W is transported from the carrier C on the carrier mounting table 173 to the coating layer 179 in the second processing block B10. The coating layer 179 coats the front surface of the substrate W with resist. Then, the substrate W is transported to the polishing layer 175 in the first processing block B9. The polishing layer 175 polishes the back surface of the substrate W that has been coated with resist, as shown in the flowchart of FIG. 9.

[0233] Thereafter, the substrate W is transferred to the exposure apparatus EXP via the IF block B5. The exposure apparatus EXP performs exposure processing on the substrate W. Thereafter, the substrate W is transferred to the development layer 180 in the first processing block B9 via the IF block B5. The development layer 180 performs exposure processing on the substrate W that has been exposed. Thereafter, the substrate W is returned to the carrier C on the carrier mounting table 173. Example 5

[0234] (10) Polishing head 201 Here, a preferred configuration (Example 5) of the above-mentioned polishing mechanism 37 will be described with reference to Fig. 26. Fig. 26 is a diagram showing a preferred configuration of the polishing mechanism of the polishing unit. Descriptions that overlap with Examples 1 to 4 will be omitted.

[0235] The polishing mechanism 37A has a configuration different from the above-described polishing mechanism 37 in the following points.

[0236] A polishing head 201 is attached to the mounting member 98. The polishing head 201 includes a polishing tool 96.

[0237] The shaft 100 to which the mounting member 98 is attached includes a gas supply pipe 203 and a suction pipe 205 therein. The gas supply pipe 203 and the suction pipe 205 are arranged in parallel inside the shaft 100. The gas supply pipe 203 and the suction pipe 205 are inserted into the shaft 100. The gas supply pipe 203 and the suction pipe 205 are connected in communication with a rotary joint 207. The rotary joint 207 includes a fixed side body 209 and a rotating side body 211. The fixed side body 209 is fixed to the arm 101. The rotating side body 211 is attached to the shaft 100. The rotary joint 207 can allow at least two fluids to flow between the fixed side body 209 fixed to the arm 101 and the rotating side body 211 that rotates together with the shaft 100.

[0238] One end of the gas supply pipe 203 extending from the rotary joint 207 is connected in communication with a gas supply source 213. The gas supply source 213 supplies gas. The gas is preferably an inert gas. The inert gas is, for example, nitrogen gas. The gas supply pipe 203 is provided with a flow rate control valve 215 and an on-off valve 217. The flow rate control valve 215 adjusts the flow rate of the gas flowing through the gas supply pipe 203. The on-off valve 217 allows or blocks the flow of the gas through the gas supply pipe 203.

[0239] One end of the suction pipe 205 extending from the rotary joint 207 is connected in communication with a suction source 219. The suction source 219 sucks the inside of the suction pipe 205. The suction source 219 sucks gas. The suction source 219 is, for example, a suction pump or a utility for suction provided in a clean room. The suction pipe 205 is provided with an on-off valve 221. The on-off valve 221 allows or blocks the flow of gas in the suction pipe 205.

[0240] The above-mentioned on-off valves 217, 221 and the flow rate adjustment valve 215 are operated by the main control unit 165. The flow rate adjustment valve 215 and the on-off valve 217 are called control valves.

[0241] Here, reference is made to Figures 27 and 28. Figure 27 is a vertical sectional view of the polishing head according to Example 5. Figure 28 is a bottom view of the polishing head according to Example 5.

[0242] The polishing head 201 includes a polishing tool 96, a head body 223, and a cover 225. The head body 223 has the polishing tool 96 attached to its lower surface. The head body 223 is formed with a first flow path 227 and a second flow path 229. The first flow path 227 and the second flow path 229 are not connected to each other. The first flow path 227 and the second flow path 229 connect the upper surface and the outer circumferential surface of the head body 223. The first flow path 227 has openings 231 formed at, for example, three locations on the outer circumferential surface of the head body 223. The second flow path 229 has openings 233 formed at, for example, three locations on the outer circumferential surface of the head body 223. The first flow path 227 and the second flow path 229 are preferably formed to be line-symmetrical with respect to a straight line passing through the vertical axis AX5 in a plan view.

[0243] The cover 225 is attached to the head body 223. The cover 225 is attached to the outer circumferential surface of the head body 223. The cover 225 has, for example, a shape that is inclined outward from a horizontally extending portion. In other words, the cover 225 has a trapezoidal shape. The lower end of the cover 225 is located at a position higher than the lower surface of the polishing tool 96. This is to prevent the cover 225 from interfering with the substrate W even if the polishing tool 96 is worn. The cover 225 includes a first cover 225a and a second cover 225b. The first cover 225a and the second cover 225b are formed to be line-symmetrical with respect to a straight line passing through the vertical axis AX5 in a plan view.

[0244] The first cover 225a covers the side of the opening 231. The second cover 225b covers the side of the opening 233. The lower part of the first cover 225a forms an ejection port 235. The lower part of the second cover 225b forms a suction port 237. The ejection port 235 is provided along half the circumference of the outer circumferential surface of the grinding tool 96. The suction port 237 is provided along half the circumference of the outer circumferential surface of the grinding tool 96. The suction port 237 is formed so as to be symmetrical to the ejection port 235 with respect to a straight line passing through the vertical axis AX5 in a plan view.

[0245] In the polishing head 201, the first flow path 227 is connected to the other end of the gas supply pipe 203. In the polishing head 201, the second flow path 229 is connected to the other end of the suction pipe 205. In other words, the injection port 235 is connected to the gas supply source 213. The suction port 237 is connected to the suction source 219.

[0246] The polishing unit 22 configured as above polishes the substrate W, for example, as follows. The operation of the arm 101 and the like is as described above.

[0247] The main control unit 165 performs operations related to the supply and suction of gas. Specifically, the main control unit 165 sets the flow rate adjustment valve 215 to a predetermined supply flow rate in advance. This predetermined supply flow rate is preferably set within a range that does not exceed the flow rate suctioned from the suction pipe 205. The main control unit 165 opens the on-off valves 217, 221 in accordance with the timing of starting the polishing process or at a slightly earlier timing. As a result, nitrogen gas is supplied to the gas supply pipe 203 at a predetermined supply flow rate, and gas is suctioned from the suction pipe 205.

[0248] According to this embodiment, dust generated on the back surface of the substrate W during polishing by the polishing tool 96 rotating about the vertical axis AX5 is pushed out to the outer periphery of the polishing tool 96 by centrifugal force. Nitrogen gas is sprayed there from the spray port 235. This causes the dust adhering to the back surface of the substrate W to detach from the back surface of the substrate W. The dust is sucked by the suction port 237. Therefore, dust is less likely to remain on the back surface of the substrate W, and the rate of dust removal during polishing can be increased.

[0249] Furthermore, in this embodiment, the outer circumferential surface of the grinding tool 96 is divided into line symmetry in plan view, and each of these is made into the injection port 235 and the suction port 237. Therefore, it is possible to maintain a good balance between the supply of nitrogen gas and the suction on the outer circumferential surface of the grinding tool 96. Therefore, it is possible to effectively remove dust.

[0250] Moreover, according to this embodiment, the flow rate of the nitrogen gas from the injection port 235 is set so as not to exceed the flow rate due to suction. Therefore, it is possible to prevent dust caused by the injection of nitrogen gas from the injection port 235 from being sucked through the suction port 237 and scattering to the surroundings.

[0251] It is preferable that the main control unit 165 operates the flow rate adjustment valve 215 to vary the flow rate of the nitrogen gas over time. In this case, the flow rate includes a flow rate of 0, which means that no nitrogen gas is supplied. This causes the flow rate of the nitrogen gas injected from the injection port 235 to fluctuate. In other words, the supply of nitrogen gas is not constant but discontinuous or intermittent. The main control unit 165 may also operate the opening and closing of the on-off valve 217 while keeping the flow rate constant without operating the flow rate adjustment valve 215. This causes the injection of nitrogen gas from the injection port 235 to be discontinuous or intermittent.

[0252] If nitrogen gas is sprayed continuously, the dust may be pressed against the back surface of the substrate W, making it difficult to smoothly remove it by suction. Therefore, the main control unit 165 operates the flow rate adjustment valve 215 and the on-off valve 217 to discontinuously spray nitrogen gas from the polishing head 201. If nitrogen gas is sprayed discontinuously and intermittently, the pressing force of the nitrogen gas is temporarily weakened, making it easier to separate the dust. Example 6

[0253] Sixth embodiment of the present invention will be described below with reference to the drawings. Note that the configuration except for the polishing head 201A is the same as the above-mentioned embodiments.

[0254] Please refer to Fig. 29 and Fig. 30. Fig. 29 is a vertical sectional view of the polishing head according to Example 6. Fig. 30 is a bottom view of the polishing head according to Example 6.

[0255] The polishing head 201A includes a polishing tool 96A, a head body 223A, and a cover 225A. The polishing tool 96A is attached to the bottom surface of the head body 223A. The head body 223A is formed with a first flow path 241 and a second flow path 243. The first flow path 241 and the second flow path 243 are not connected to each other. The first flow path 241 has an opening 245 formed on the bottom surface of the head body 223A. The first flow path 241 is approximately aligned with the vertical axis AX5. The second flow path 243 connects the top surface and the outer circumferential surface of the head body 223A. The second flow path 243 is formed with, for example, four openings 247 on the outer circumferential surface of the head body 223A. The second flow path 243 is also connected to, for example, the top surface of the head body 223A at four points. In the second flow channel 243, it is preferable that the positional relationship of the openings 247 is equiangular in plan view, so that suction can be performed uniformly.

[0256] The cover 225A is attached to the head body 223A. The cover 225A is attached to the outer circumferential surface of the head body 223A. The cover 225A has a shape that hangs downward from a horizontally directed portion, for example. The lower end of the cover 225A is located higher than the lower surface of the grinding tool 96. The lower part of the cover 225A forms a suction port 248.

[0257] The grinding tool 96A has a through hole 249 formed in the center. The grinding tool 96A has an annular shape in a plan view. In a plan view, the through hole 249 substantially overlaps with the vertical axis AX5. In a plan view, the through hole 249 overlaps with the first flow path 241. The through hole 249 communicates with the first flow path 241. Of the through hole 249, an opening that communicates with the lower surface of the grinding tool 96A is an injection port 251.

[0258] In the polishing head 201A, the first flow path 241 is connected to the other end of the gas supply pipe 203. In the polishing head 201A, the second flow path 243 is connected to the other end of the suction pipe 205. In other words, the injection port 251 is connected to the gas supply source 213. The suction port 248 is connected to the suction source 219.

[0259] According to this embodiment, the nitrogen gas jetted from the center of the polishing tool 96A heads toward the outer periphery of the polishing tool 96A on the back surface of the substrate W. Therefore, the nitrogen gas containing dust can be efficiently sucked by the suction port 248. Example 7

[0260] Seventh embodiment of the present invention will be described below with reference to the drawings. Note that the configuration except for the polishing head 201B is the same as the above-mentioned embodiments.

[0261] Please refer to Fig. 31 and Fig. 32. Fig. 31 is a vertical sectional view of the polishing head according to Example 7. Fig. 32 is a bottom view of the polishing head according to Example 7.

[0262] The polishing head 201B includes a polishing tool 96B, a head body 223B, and a cover 225A. The polishing tool 96B is attached to the bottom surface of the head body 223B. The head body 223B is formed with a first flow path 241 and a second flow path 243. The first flow path 241 and the second flow path 243 are the same as those in the above-mentioned Example 6. The head body 223B is formed with an edge portion 253. The edge portion 253 is formed by protruding the edge portion of the bottom surface of the head body 223B downward. The polishing part 96B is attached to this edge portion 253.

[0263] The polishing tool 96B is made of a porous material. A large number of small holes are formed in the polishing tool 96B. The large number of holes in the polishing tool 96B are connected to each other in communication. Nitrogen gas supplied from the first flow path 241 passes through the large number of small holes in the polishing tool 96B and is sprayed from the bottom surface of the polishing tool 96B onto the back surface of the substrate W. In other words, the bottom surface of the polishing tool 96B forms an injection port 255.

[0264] The cover 225A has the same structure as that of the sixth embodiment described above, and the lower part thereof constitutes the suction port 248.

[0265] According to this embodiment, nitrogen gas is supplied to the polishing tool 96B made of a porous member, and the nitrogen gas is sprayed onto the dust from the nozzles 255 that cover almost the entire bottom surface of the polishing tool 96B. Therefore, the dust can be efficiently pushed out to the periphery. Example 8

[0266] Next, an eighth embodiment of the present invention will be described with reference to the drawings. Note that descriptions overlapping with those of the first to seventh embodiments will be omitted. Fig. 33 is a flowchart showing the operation of the polishing processing apparatus according to the eighth embodiment.

[0267] In Example 1, scratches were not observed after polishing the back surface of the substrate W (Step S04). In contrast, in Example 8, scratches after polishing are observed (Step S51 in FIG. 33).

[0268] 33, steps S01 to S06 are performed in substantially the same manner as steps S01 to S06 shown in Fig. 9. After the cleaning process of the substrate W (step S05), the substrate transport robot TR1 takes out the substrate W from the polishing unit 22, and transports the substrate W to one of the stages 121 of the two inspection units 20.

[0269] [Step S51] Observing scratches after polishing The inspection unit 20 particularly re-detects scratches formed on the back surface of the substrate W. That is, similar to the operation of step S02, the inspection unit 20 acquires an observation image by the camera 124 and the illumination 125. The inspection control unit 130 performs image processing on the acquired observation image to extract scratches on the polishing target. If scratches on the polishing target cannot be extracted, the main control unit 165 determines that re-polishing is not necessary, and proceeds to step S06.

[0270] On the other hand, when a scratch is detected on the polishing target, the main control unit 165 determines that re-polishing is necessary. Then, the inspection unit 20 measures the depth of the scratch on the polishing target. That is, the laser microscope 127 acquires a three-dimensional image including the scratch on the polishing target. The inspection control unit 130 performs image processing on the acquired three-dimensional image and measures the depth of the scratch on the polishing target (value DP3 in FIG. 10(b)).

[0271] Thereafter, the substrate transport robot CR transports the substrate W from the stage 121 of the inspection unit 20 to the holding and rotating part 35 of the polishing unit 22. After transport, the substrate W is held by the holding and rotating part 35, and gas is discharged from the gas discharge port 47. Thereafter, the substrate thickness measuring device 39 is moved above the substrate W and measures the thickness of the substrate W (value TK3 in FIG. 10(b)). Return to step S04.

[0272] In step S04, when the inspection unit 20 extracts a scratch on the polishing target, the polishing unit 22 again polishes the back surface of the substrate W. The polishing is performed until a thickness (value DP3) corresponding to the depth of the scratch is removed. In other words, the polishing is performed until the thickness of the substrate W reaches a value TK2 (=TK3-DP3) shown in FIG. 10(b).

[0273] According to this embodiment, polishing is carried out until there are no more scratches on the polishing target that require polishing, so that it is possible to prevent the edges of the scratches from creating new scratches on, for example, the stage of the exposure apparatus EXP.

[0274] In this embodiment, if there are scratches on the polishing target, the wet etching step (step S03) is not performed. In this regard, wet etching may be performed if necessary. Example 9

[0275] Next, a ninth embodiment of the present invention will be described with reference to the drawings. Note that the description overlapping with the first to eighth embodiments will be omitted.

[0276] Fig. 34 is a diagram showing the relationship between the heating temperature of the substrate W and the contact pressure (pressing pressure) of the polishing tool 96. Fig. 34 is a diagram when the polishing rate is constant. In Fig. 34, it is assumed that a predetermined polishing rate RA is obtained when the temperature of the substrate W is room temperature (e.g., 25°C) and a predetermined contact pressure P1. Heating the substrate W increases the polishing rate. Therefore, if the temperature is raised above room temperature (e.g., temperature TM2) while maintaining the polishing rate RA, it is possible to set the contact pressure P2 lower than the contact pressure P1. In other words, when the polishing rate RA is constant, the contact pressure can be reduced by raising the temperature of the substrate W.

[0277] According to this embodiment, the polishing unit 22 can adjust the polishing rate by controlling the contact pressure of the polishing tool 96 on the substrate W in addition to the heating temperature of the substrate W. For example, the contact pressure of the polishing tool 96 on the substrate W can be reduced by increasing the heating temperature of the substrate W while maintaining the polishing rate. This makes it possible to suppress the load on the substrate W due to the contact pressure. In other words, it is possible to prevent the substrate W from being pressed too hard.

[0278] The polishing rate is not limited to being adjusted based on the relationship between the heating temperature of the substrate W and the contact pressure of the polishing tool 96. That is, the polishing rate may be adjusted based on the relationship between the heating temperature of the substrate W and the moving speed of the polishing tool 96. The polishing rate may also be adjusted based on the relationship between the heating temperature of the substrate W and the moving speed (oscillating speed) of the polishing tool 96 around the vertical axis AX6. The polishing rate may also be adjusted based on the relationship between the heating temperature of the substrate W and the rotation speed of the polishing tool 96 around the vertical axis AX5. The polishing rate may also be adjusted based on the relationship between the heating temperature of the substrate W and the rotation speed of the polishing tool 96 around the vertical axis AX5.

[0279] That is, the polishing unit 22 may adjust the polishing rate by controlling at least one of the contact pressure of the polishing tool 96 on the substrate W, the movement speed of the polishing tool 96, the rotation speed of the polishing tool 96, and the rotation speed of the substrate W, in addition to the heating temperature of the substrate W. Example 10

[0280] Next, a tenth embodiment of the present invention will be described with reference to the drawings. Note that the description overlapping with the first to ninth embodiments will be omitted.

[0281] 1, in Example 1, the processing unit U1 is the inspection unit 20, and each of the processing units U2 to U4 is the polishing unit 22. In Example 10, each of the processing units U2 and U3 may be a polishing unit 341, and the processing unit U4 may be a liquid processing unit 343. It is noted that the processing unit U1 is the inspection unit 20.

[0282] That is, each of the polishing layers 14A, 14B in Example 10 includes two stages of inspection units 20, two stages of polishing units 341, and two stages of liquid processing units 343. In other words, each of the polishing layers 14A, 14B includes eight processing units U1 to U4. Fig. 35 is a diagram showing the polishing unit 341 in Example 10. Fig. 36 is a diagram showing the liquid processing unit 343 in Example 10.

[0283] 4 is divided into two. The liquid processing unit 343 includes a second holding / rotating unit 345 having a similar configuration to the holding / rotating unit 35. The polishing unit 341 may include a rinsing liquid nozzle 73, a rinsing liquid supply source 89, and a rinsing liquid pipe 90.

[0284] The operation of each of the polishing layers 14A, 14B is performed based on the flow chart shown in Fig. 9 or Fig. 33. However, for example, the substrate W is transported between the polishing unit 341 and the liquid treatment unit 343. For example, during steps S02 to S05 in Fig. 9, the substrate W is transported by the substrate transport robot TR1 in the order of the inspection unit 20, the liquid treatment unit 343 (wet etching step), the polishing unit 341, and the liquid treatment unit 343 (substrate W cleaning step).

[0285] According to this embodiment, the same effects as those of embodiment 1 can be obtained. In addition, since the configuration of polishing unit 22 in Fig. 4 is divided into two, each of polishing unit 341 and liquid processing unit 343 can be configured compactly.

[0286] A configuration related to the wet etching process (step S03) of the liquid processing unit 343 may be provided in the polishing unit 341. A configuration related to the cleaning process (step S05) of the substrate W of the liquid processing unit 343 may be provided in the polishing unit 341. In the tenth embodiment, the polishing unit 341 does not include heaters 347, 354 (see FIG. 35) described later.

[0287] The present invention is not limited to the above-described embodiment, but can be modified as follows.

[0288] (1) In the above-described embodiments, suction is performed through the suction ports 237, 248 having wide openings formed in the covers 225, 225A. However, the present invention is not limited to such a configuration. For example, a piping structure may be adopted in which one end of a pipe is connected to the opening 233, 247 of the head body 223 (223A, 223B) and the other end of the pipe faces the polishing surface.

[0289] (2) In each of the above-described embodiments, nitrogen gas is injected from the injection port. However, the gas in the present invention is not limited to nitrogen gas. For example, argon gas may be used as the gas.

[0290] (3) In each of the above-described embodiments, the gas supply pipe 203 and the suction pipe 205 are arranged in parallel. However, the present invention is not limited to such a configuration. For example, a configuration in which a double pipe is inserted into the shaft 100 and used for gas supply and suction may be adopted.

[0291] (4) In the above-described embodiments, the main control unit 165 operates the flow rate control valve 215 to vary the flow rate of the nitrogen gas over time, but such an operation is not essential to the present invention. In other words, the flow rate of the nitrogen gas may be maintained constant throughout the polishing process.

[0292] (5) In each of the above-described embodiments, the polishing heads 201, 201A, and 201B are configured to be detachably attached to the mounting member 98. However, the polishing heads 201, 201A, and 201B may be configured to be semi-fixed to the mounting member 98, and only the polishing tools 96, 96A, and 96B may be detachable and easily replaceable.

[0293] (6) In each of the above-described embodiments and modifications, the polishing unit 22 includes a hot plate 45 as a heating means. The polishing unit 22 may be configured to discharge heated gas from the gas discharge port 47 instead of the hot plate 45. The substrate can be heated by the heated gas from the gas discharge port 47. In this case, for example, the polishing unit 22 may include a heater 347 (see FIG. 4 and FIG. 35) that heats the gas passing through the gas pipe 61 from the outside of the gas pipe 61. In this case, the polishing unit 22 may not include the hot plate 45. The substrate W may be heated by both the hot plate 45 and the heated gas discharged from the gas discharge port 47. The gas discharge port 47 corresponds to the heating means of the present invention.

[0294] (7) In each of the above-mentioned embodiments and modifications, the polishing unit 22 includes a hot plate 45 as a heating means. In this regard, as shown in FIG. 37(a) and FIG. 37(b), the polishing unit 22 may include a heater 349 (352) for heating the polishing tool 96 instead of the hot plate 45. Alternatively, the polishing unit 22 may include a hot plate 45 and a heater 349 (352). In FIG. 37(a), the mounting member 98 is configured like a container with a concave bottom surface. A ring-shaped heater 349 is provided in a hollow cylindrical portion 350 surrounding the polishing tool 96 (vertical axis AX5) of the mounting member 98. The heater 349 heats the polishing tool 96. When the polishing tool 96 is heated, the substrate W can be heated through the polishing tool 96. In addition, the interface between the polishing tool 96 and the back surface of the substrate W can be effectively heated.

[0295] 37(b), the heater 352 may be built into the mounting member 98 and disposed between the shaft 100 and the grinding tool 96. Each heater 349, 352 may be heated by an electric heater such as a nichrome wire. Each heater 349, 352 may be provided with a pipe and heated by passing a heated gas or heated liquid through the pipe. Each heater 349, 352 corresponds to the heating means of the present invention.

[0296] (8) In each of the above-described embodiments (except for embodiments 5 to 7) and each of the modified examples, the rear surface of the substrate W is polished by a dry chemical mechanical grinding method using the polishing tool 96. In this regard, the rear surface of the substrate W may be polished by a chemical mechanical grinding method using the polishing tool 96 while supplying liquid onto the rear surface of the substrate W. For example, heated pure water (e.g., DIW) may be supplied onto the rear surface of the substrate W and near the polishing tool 96 from the rinsing liquid nozzle 73 (FIGS. 4 and 35). The substrate W can be heated by the heated pure water. In addition, the polishing debris can be washed away from the rear surface of the substrate W by the heated pure water. For example, the polishing unit 22 (341) may include a heater 354 that heats the pure water passing through the rinsing liquid pipe 90 from the outside of the rinsing liquid pipe 90. In addition, the substrate W may be heated by heated pure water from the rinsing liquid nozzle 73 instead of being heated by the hot plate 45. In this case, the polishing unit 22 may not include the hot plate 45. The rinsing liquid nozzle 73 corresponds to the heating means of the present invention.

[0297] In addition, the substrate W may be heated by at least one of the hot plate 45, the gas outlet 47 that ejects heated gas, the heater 349 (or heater 352) that heats the polishing tool 96, and the rinsing liquid nozzle 73 that supplies heated pure water to the back surface of the substrate W.

[0298] The polishing unit 22 may also be provided with these heating means and may control the heating temperature of the substrate W by combining the heating means. For example, assume that the substrate W is heated only by the hot plate 45 (symbol H1 in FIG. 38). If the substrate W is to be heated further, the substrate W may be heated by the gas outlet 47 for discharging heated gas in addition to the hot plate 45 (symbol H1+symbol H2 in FIG. 38). If the substrate W is to be heated further, the substrate W may be heated by the heater 349 (or heater 352) for heating the polishing tool 96 in addition to the hot plate 45 and the gas outlet 47 (symbol H1+symbol H2+symbol H3 in FIG. 38). If the substrate W is to be heated less from this state, the substrate W may be heated only by the hot plate 45 (symbol H1).

[0299] (9) In each of the above-described embodiments and modifications, the substrate thickness measuring device 39 measures the thickness of the substrate W before the wet etching step (step S03). In this regard, the substrate thickness measuring device 39 may measure the thickness of the substrate W between the wet etching step (step S03) and the step of polishing the back surface of the substrate W (step S04). In this case, the scratch observation step (step S02) may be moved between steps S03 and S04.

[0300] (10) In each of the above-described embodiments and modified examples, the contact pressure of the polishing tool 96 on the substrate W may be detected by, for example, a load cell. The moving speed of the polishing tool 96 may be detected by a rotary encoder that detects the angle of the polishing tool 96 about the vertical axis AX6. The rotation speed of the polishing tool 96 may be detected by a rotary encoder that detects the angle of the polishing tool 96 about the vertical axis AX5. The rotation speed of the substrate W may be detected by a rotary encoder that detects the angle of the substrate W about the rotation axis AX3. The main control unit 165 may control each component based on these detection results.

[0301] (11) In each of the above-described embodiments and modifications, the holding and rotating unit 35 holds the substrate W with its back surface facing upward in a horizontal position. Also, the spin base 41 of the holding and rotating unit 35 is disposed below the substrate W. In this regard, the holding and rotating unit 35 may be disposed upside down. That is, the spin base 41 of the holding and rotating unit 35 is disposed above the substrate W (see the holding and rotating unit 157 in FIG. 3). Also, the holding and rotating unit 35 holds the substrate W with its back surface facing downward in a horizontal position. In this case, the polishing tool 96 is brought into contact with the substrate W with its back surface facing downward from below the substrate W.

[0302] (12) In each of the above-described embodiments and modifications, steps S21 to S26 are performed as the wet etching process (FIG. 11). Of the six steps S21 to S26, only steps S21 to S23 may be performed. Also, of the six steps S21 to S26, only steps S24 to S26 may be performed.

[0303] (13) In each of the above-described embodiments and modifications, steps S31 to S36 are performed as the cleaning process for the substrate W (FIG. 13). Of the six steps S31 to S36, only steps S31 to S33 may be performed. Also, of the six steps S31 to S36, only steps S34 to S36 may be performed.

[0304] (14) In the substrate processing apparatus 1 of the above-mentioned embodiment 1, the indexer block B1, the polishing block B2, the coating block B3, the developing block B4, and the IF block B5 are arranged in this order in the horizontal direction. After the back surface of the substrate W is polished in the polishing block B2, the coating block B3 applies resist to the front surface of the substrate W. In this regard, as shown in FIG. 39, the indexer block B1, the coating block B3, the polishing block B2, the developing block B4, and the IF block B5 may be arranged in a horizontal line in this order. After the resist is applied in the coating block B3, the polishing block B2 may polish the back surface of the substrate W.

[0305] (15) In each of the embodiments and modifications described above, the exposure apparatus EXP includes a light source that irradiates EUV light. This light source may irradiate light of a wavelength other than EUV light (for example, ArF light (193 nm), KrF light (248 nm)). [Explanation of symbols]

[0306] 1 ... Substrate processing equipment B1 … Indexer block B2 ... Polishing block B3: Coating block B4 ... Development block B5: Interface block (IF block) B7: Intermediate block B8 … Processing block B9 … First processing block B10: Second processing block 3,173,174 … Carrier placement stand IR1~IR3 ... Indexer robot TR1~TR16 … Substrate transport robot U1~U4,U31,U32 … Processing units U11, U12, U21, U22 … Processing units 20 … Inspection unit 22,341 … Polishing unit 35 … Rotating holding part 41 ... Spinbase 43 ... Retaining pin 45 … Hot plate 47 ... Gas outlet 73 ... Rinse liquid nozzle 96 … Polishing tools 127 ... Laser scanning confocal microscope (laser microscope) PR … Coating unit L1,L2 … Coating layer L3,L4… Polishing layer L5,L6…Development layer G1: Buffer group BF11, BF13~BF16, BF21, BF22 ... Substrate buffer 347,349,352,354 … heater

Claims

1. an indexer block including a carrier placement stage on which a carrier that accommodates a substrate is placed, the indexer block inserting and removing the substrate from the carrier placed on the carrier placement stage; a processing block for performing a predetermined processing on the substrate; an interface block for loading and unloading the substrate into and from an external exposure device; Equipped with the indexer block, the processing block, and the interface block are arranged in this order in a horizontal line; The processing block includes a coating block and a polishing block that are linearly arranged in a horizontal direction, the coating block has a coating unit that coats a resist on a surface of the substrate, the polishing block has a polishing unit that polishes a back surface of the substrate, The polishing unit includes: a holding and rotating unit that rotates the substrate while holding the substrate in a horizontal position; A heating means for heating the substrate; and a polishing tool that includes a resin body having abrasive grains dispersed therein, and that contacts the rear surface of the substrate as it rotates while being heated, thereby polishing the rear surface of the substrate by a chemical mechanical grinding method.

2. 2. The substrate processing apparatus according to claim 1, Further, a control unit is provided, The substrate processing apparatus according to claim 1, wherein the control unit adjusts a polishing rate by controlling a heating temperature of the substrate by the heating means when polishing is performed.

3. 3. The substrate processing apparatus according to claim 2, The control unit further adjusts the polishing rate by controlling at least one of the contact pressure of the polishing tool against the substrate, the movement speed of the polishing tool, the rotation speed of the polishing tool, and the rotation speed of the substrate.

4. 4. The substrate processing apparatus according to claim 1, The holding and rotating unit includes a spin base that is rotatable around a rotation axis extending in a vertical direction; three or more holding pins provided on an upper surface of the spin base in a ring shape so as to surround the rotation shaft and configured to hold the substrate at a distance from the upper surface of the spin base by sandwiching a side surface of the substrate; 2. The substrate processing apparatus according to claim 1, wherein the heating means is a first heater provided on an upper surface of the spin base.

5. 4. The substrate processing apparatus according to claim 1, The holding and rotating unit includes a spin base that is rotatable around a rotation axis extending in a vertical direction; three or more holding pins provided on an upper surface of the spin base in a ring shape so as to surround the rotation shaft and configured to hold the substrate at a distance from the upper surface of the spin base by sandwiching a side surface of the substrate; a heating means for heating the substrate in a position where the substrate is supported on the substrate support member and the substrate support member is supported on the substrate support member;

6. 4. The substrate processing apparatus according to claim 1, 4. The substrate processing apparatus according to claim 3, wherein the heating means is a second heater for heating the polishing tool.

7. 4. The substrate processing apparatus according to claim 1, 4. The substrate processing apparatus according to claim 1, wherein the heating means is a heated water supply nozzle for supplying heated water onto the rear surface of the substrate.

8. 8. The substrate processing apparatus according to claim 1, the processing block further includes a development block that performs development processing on the substrate exposed by the exposure device; 4. The substrate processing apparatus according to claim 1, wherein the coating block, the polishing block, and the developing block are arranged linearly in a horizontal direction.

9. an indexer block including a carrier placement stage on which a carrier that accommodates a substrate is placed, the indexer block inserting and removing the substrate from the carrier placed on the carrier placement stage; a processing block for performing a predetermined processing on the substrate; an interface block for loading and unloading the substrate into and from an external exposure device; Equipped with the indexer block, the processing block, and the interface block are arranged in this order in a horizontal line; the processing block includes a coating unit that coats a resist on a surface of the substrate, the interface block has a polishing unit that polishes a back surface of the substrate on which a resist has been applied by the application unit, The polishing unit includes: a holding and rotating unit that rotates the substrate while holding the substrate in a horizontal position; A heating means for heating the substrate; and a polishing tool that includes a resin body having abrasive grains dispersed therein, and that contacts the rear surface of the substrate as it rotates while being heated, thereby polishing the rear surface of the substrate by a chemical mechanical grinding method.

10. 10. The substrate processing apparatus according to claim 9, the processing block includes a coating block and a developing block; The coating block has the coating unit, the developing block includes a developing unit that performs a developing process on the substrate exposed by the exposure device, The substrate processing apparatus according to claim 1, wherein the developing block is disposed between the coating block and the interface block.

11. an indexer block including a carrier placement stage on which a carrier that accommodates a substrate is placed, the indexer block inserting and removing the substrate from the carrier placed on the carrier placement stage; a processing block for performing a predetermined processing on the substrate; an interface block for loading and unloading the substrate into and from an external exposure device; Equipped with the indexer block, the processing block, and the interface block are arranged in this order in a horizontal line; The processing block includes a coating layer and a polishing layer stacked in a vertical direction, the coating layer includes a coating unit that coats a resist on a surface of the substrate, the polishing layer has a polishing unit that polishes the back surface of the substrate, The polishing unit includes: a holding and rotating unit that rotates the substrate while holding the substrate in a horizontal position; A heating means for heating the substrate; and a polishing tool that includes a resin body having abrasive grains dispersed therein, and that contacts the rear surface of the substrate as it rotates while being heated, thereby polishing the rear surface of the substrate by a chemical mechanical grinding method.

12. 12. The substrate processing apparatus according to claim 11, The processing block further includes a development layer for performing a development process on the substrate exposed by the exposure device, The substrate processing apparatus according to claim 1, wherein the developing layer, the coating layer, and the polishing layer are stacked in a vertical direction.

13. 13. The substrate processing apparatus according to claim 11, an intermediate block disposed between the indexer block and the processing block; the intermediate block includes a buffer group and a substrate transport robot; the buffer group includes a plurality of substrate buffers arranged in a vertical direction, the plurality of substrate buffers each for placing the substrate thereon, the substrate transport robot transports the substrate among the plurality of substrate buffers; The substrate processing apparatus, wherein the indexer block transports the substrate between the indexer block and the processing block via the buffer group.

14. a first processing block having a polishing unit for polishing a back surface of a substrate; an indexer block including a carrier placement stage for placing a carrier that accommodates the substrate, the indexer block placing and removing the substrate from the carrier placed on the carrier placement stage; a second processing block having a coating unit for coating a resist on a surface of the substrate; an interface block that is connected to the first processing block or the second processing block in a horizontal direction and that transfers the substrate to and from an external exposure device; Equipped with the first processing block, the indexer block, and the second processing block are arranged in this order in a horizontal line; The polishing unit includes: a holding and rotating unit that rotates the substrate while holding the substrate in a horizontal position; A heating means for heating the substrate; and a polishing tool that includes a resin body having abrasive grains dispersed therein, and that contacts the rear surface of the substrate as it rotates while being heated, thereby polishing the rear surface of the substrate by a chemical mechanical grinding method.

15. 15. The substrate processing apparatus according to claim 14, the second processing block further includes a developing unit that performs a developing process on the substrate exposed by the exposure device; The substrate processing apparatus according to claim 1, wherein the interface block is horizontally connected to the second processing block.

Images