Detector

Abstract

To provide a detector capable of stable detection.SOLUTION: According to an embodiment, a detector includes an element portion. The element portion includes a first detection portion and a wiring portion. The first detection portion includes a first electrode, a first counter electrode, and a first organic semiconductor layer. At least a part of the first organic semiconductor layer is disposed between the first electrode and the first counter electrode. The wiring part includes a first electrode layer electrically connected with the first electrode, a first counter electrode layer electrically connected with the first counter electrode, and a first conductive layer. The first counter electrode layer is disposed between the first electrode layer and the first detection portion in a first direction from the first electrode layer to the first counter electrode layer. The first conductive layer is disposed between the first electrode layer and the first counter electrode layer in the first direction.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] SUMMARY OF THE DISCLOSURE The present invention relates to a detector. [Background technology]

[0002] In the detector, stable detection is desired. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2013-45977 A Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments of the present invention provide a detector capable of stable detection. [Means for solving the problem]

[0005] According to an embodiment of the present invention, the detector includes an element section. The element section includes a first detection section and a wiring section. The first detection section includes a first electrode, a first counter electrode, and a first organic semiconductor layer. At least a portion of the first organic semiconductor layer is between the first electrode and the first counter electrode. The wiring section includes a first electrode layer electrically connected to the first electrode, a first counter electrode layer electrically connected to the first counter electrode, and a first conductive layer. In a first direction from the first electrode layer to the first counter electrode layer, the first counter electrode layer is between the first electrode layer and the first detection section. In the first direction, the first conductive layer is between the first electrode layer and the first counter electrode layer. [Brief description of the drawings]

[0006] [Figure 1] 1(a) to 1(c) are schematic cross-sectional views illustrating the detector according to the first embodiment. [Diagram 2]FIG. 2 is a schematic plan view illustrating the detector according to the first embodiment. [Diagram 3] FIG. 3 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 4] FIG. 4 is a schematic plan view illustrating the detector according to the first embodiment. [Diagram 5] FIG. 5 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 6] FIG. 6 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 7] FIG. 7 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 8] FIG. 8 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 9] FIG. 9 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 10] FIG. 10 is a schematic cross-sectional view illustrating the detector according to the first embodiment. [Figure 11] FIG. 11 is a schematic cross-sectional view illustrating the detector according to the first embodiment. [Figure 12] 12(a) to 12(c) are schematic cross-sectional views illustrating the detector according to the first embodiment. [Figure 13] FIG. 13 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 14] FIG. 14 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 15] FIG. 15 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 16] FIG. 16 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 17] FIG. 17 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 18] FIG. 18 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 19]FIG. 19 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 20] FIG. 20 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 21] FIG. 21 is a schematic plan view illustrating the detector according to the first embodiment. [Figure 22] FIG. 22 is a schematic cross-sectional view illustrating the detector according to the second embodiment. As shown in FIG. [Diagram 23] FIG. 23 is a schematic cross-sectional view illustrating the detector according to the second embodiment. As shown in FIG. [Figure 24] FIG. 24 is a schematic cross-sectional view illustrating the detector according to the second embodiment. As shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios of each part may be different depending on the drawing. In this specification and each drawing, elements similar to those described above with reference to the previous drawings are given the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) 1(a) to 1(c) are schematic cross-sectional views illustrating the detector according to the first embodiment. 2 to 9 are schematic plan views illustrating the detector according to the first embodiment. FIG. 10 is a schematic cross-sectional view illustrating the detector according to the first embodiment. Fig. 1(a) is a cross-sectional view taken along line A1-A2 in Fig. 2 to Fig. 9. Fig. 1(b) is a cross-sectional view taken along line B1-B2 in Fig. 2 to Fig. 9. Fig. 1(c) is a cross-sectional view taken along line C1-C2 in Fig. 2 to Fig. 9.

[0009] 1(a), a detector 110 according to the embodiment includes an element unit 10U. The element unit 10U includes a first detection unit 11D and a wiring unit 20. The first detection unit 11D includes a first electrode 11a, a first counter electrode 11b, and a first organic semiconductor layer 11c. At least a portion of the first organic semiconductor layer 11c is located between the first electrode 11a and the first counter electrode 11b.

[0010] The wiring section 20 includes a first electrode layer 21a, a first opposing electrode layer 21b, and a first conductive layer 31.

[0011] 1(b), the first electrode layer 21a is electrically connected to the first electrode 11a. For example, the first electrode 11a is electrically connected to the first electrode layer 21a by a first electrode connection portion 11ac. The first electrode layer 21a functions as a wiring layer for the first electrode 11a.

[0012] 1(a), the first counter electrode layer 21b is electrically connected to the first counter electrode 11b. For example, the first counter electrode 11b is electrically connected to the first counter electrode layer 21b by a first counter electrode connection portion 11bc. The first counter electrode layer 21b functions as a wiring layer related to the first counter electrode 11b.

[0013] A first direction D1 from the first electrode layer 21a to the first counter electrode layer 21b is defined as the Z-axis direction. A direction perpendicular to the Z-axis direction is defined as the X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0014] The first electrode layer 21a, the first counter electrode layer 21b, and the first conductive layer 31 are substantially parallel to the XY plane.

[0015] In the first direction D1, the first counter electrode layer 21b is located between the first electrode layer 21a and the first detection unit 11D. In the first direction D1, the first conductive layer 31 is located between the first electrode layer 21a and the first counter electrode layer 21b.

[0016] The first conductive layer 31 is electrically insulated from the first electrode layer 21a. The first conductive layer 31 is electrically insulated from the first opposing electrode layer 21b. As shown in FIG. 1(a), the wiring unit 20 may include an insulating member 25. At least a portion of the insulating member 25 is provided between the first electrode layer 21a and the first conductive layer 31, between the first conductive layer 31 and the first opposing electrode layer 21b, and between the first opposing electrode layer 21b and the element unit 10U.

[0017] As shown in FIG. 10, a wave to be detected 81 is incident on the element unit 10U. The wave to be detected 81 is, for example, an electromagnetic wave or radiation. In this example, the element unit 10U includes a first scintillator 41. In this case, the wave to be detected 81 is radiation. The radiation is incident on the first scintillator 41. The first scintillator 41 generates light corresponding to the radiation. The light is incident on the first detection unit 11D. In the first organic semiconductor layer 11c, a charge corresponding to the light is generated. By applying a bias voltage between the first electrode 11a and the first counter electrode 11b, the charge can be detected as an electrical signal. The detector 110 is, for example, a radiation detector. In the embodiment, the wave to be detected 81 may be light. In this case, the first scintillator 41 may be omitted. The first organic semiconductor layer 11c functions as a photoelectric conversion layer.

[0018] As shown in FIG. 10, the detector 110 may include a control unit 70. The control unit 70 can set the first opposing electrode layer 21b to a first potential V1. The first potential V1 is a potential based on the potential V0 of the first electrode layer 21a. The potential of the first electrode 11a becomes the potential V0 of the first electrode layer 21a. The potential of the first opposing electrode 11b becomes the first potential V1 of the first opposing electrode layer 21b. The first potential V1 corresponds to the bias voltage described above. As described above, when the bias voltage is applied, a signal sg1 corresponding to the incident target wave 81 is output from the control unit 70.

[0019] The control unit 70 can set the first conductive layer 31 to a second potential V2. The second potential V2 is a potential based on the potential V0 of the first electrode layer 21a. For example, the second potential V2 may be the same as the first potential V1. Alternatively, the second potential V2 may be between the potential V0 of the first electrode layer 21a and the first potential V1.

[0020] Thus, in the embodiment, the first conductive layer 31 that can be set to the second potential V2 is provided between the first electrode layer 21a and the first opposing electrode layer 21b. The first conductive layer 31 functions as a shield for the first opposing electrode layer 21b. This makes it possible to suppress fluctuations in the potential of the conductive member caused by, for example, capacitive coupling or inductive coupling.

[0021] In one example, when the detection target wave 81 is incident on the first detection unit 11D, the potential of the first opposing electrode layer 21b electrically connected to the first opposing electrode 11b changes transiently. In a reference example in which the first conductive layer 31 is not provided, this change in potential may affect the potential of other conductive members. For example, the potential of the first electrode layer 21a may change due to the transient change in the potential of the first opposing electrode layer 21b. This generates noise. The potential of the wiring layer corresponding to the other detection unit may change due to the transient change in the potential of the first opposing electrode layer 21b. In the reference example, stable detection is difficult due to the noise.

[0022] In contrast, in the embodiment, the first conductive layer 31 is provided. The first conductive layer 31 functions as a shield. This makes it possible to suppress noise. Stable detection becomes easier. According to the embodiment, a detector capable of stable detection can be provided.

[0023] For example, when the number of detection elements (pixels) of a detector increases, the wiring becomes longer and the wiring capacitance increases. This tends to increase noise. In the embodiment, even when the number of pixels increases, detection with suppressed noise is easy.

[0024] For example, when the wiring capacitance increases and noise increases, the operation of the preamplifier becomes unstable and oscillation becomes more likely to occur. By providing the first conductive layer 31 that functions as a shield, the operation of the preamplifier becomes stable and oscillation is suppressed.

[0025] 10, the control unit 70 may include a first circuit 71 and a second circuit 72. The first circuit 71 can set the first opposing electrode layer 21b to a first potential V1. The second circuit 72 can set the first conductive layer 31 to a second potential V2.

[0026] In the embodiment, the potential V0 is, for example, a ground potential. The first potential V1 and the second potential V2 are negative. In one example, the first potential V1 and the second potential V2 are −10V.

[0027] 1(a), in this example, the wiring unit 20 includes a second conductive layer 32. The second conductive layer 32 is electrically connected to the first conductive layer 31. In the first direction D1, at least a portion of the second conductive layer 32 is between at least a portion of the first opposing electrode layer 21b and the first detection unit 11D.

[0028] As shown in FIG. 1(a), the wiring portion 20 includes a first conductive layer connection portion 31c. The first conductive layer connection portion 31c electrically connects the second conductive layer 32 to the first conductive layer 31. The potential of the second conductive layer 32 becomes a second potential V2. The second conductive layer 32 functions as a shield. The first opposing electrode layer 21b is provided between the first conductive layer 31 and the second conductive layer 32, which function as a shield. The influence caused by the fluctuation in the potential of the first opposing electrode layer 21b is more effectively suppressed.

[0029] 1(a), the wiring portion 20 includes a first counter electrode connection portion 11bc. The second conductive layer 32 includes a second conductive layer hole 32o. The first counter electrode connection portion 11bc passes through the second conductive layer hole 32o in the first direction D1. The first counter electrode connection portion 11bc electrically connects the first counter electrode 11b to the first counter electrode layer 21b.

[0030] 1(b), the wiring portion 20 includes a first electrode connection portion 11ac. The first conductive layer 31 includes a first conductive layer hole 31o. The first electrode connection portion 11ac passes through the first conductive layer hole 31o in the first direction D1. The first electrode connection portion 11ac electrically connects the first electrode 11a to the first electrode layer 21a.

[0031] 1(b), the second conductive layer 32 includes another second conductive layer hole 32p. The first electrode connection portion 11ac passes through the second conductive layer hole 32p in the first direction D1.

[0032] As shown in FIG. 1(a), the element unit 10U includes a first scintillator 41. The first detection unit 11D is located between the wiring unit 20 and the first scintillator 41. The element unit 10U includes a second scintillator 42. The second detection unit 12D is located between the wiring unit 20 and the second scintillator 42. In this manner, the element unit 10U may include a plurality of scintillators 40. One of the plurality of detection units 10D is located between the wiring unit 20 and one of the plurality of scintillators 40.

[0033] 1(a), in the detector 110, the direction from the first electrode 11a to the first counter electrode 11b is along a first direction D1. For example, in the first direction D1, the first electrode 11a is between the wiring portion 20 and the first counter electrode 11b. In the first direction D1, the first electrode 11a is between the first conductive layer 31 and the first counter electrode 11b.

[0034] In this example, as shown in Fig. 10, the detection target wave 81 (or the light from the first scintillator 41) passes through the first counter electrode 11b and enters the first organic semiconductor layer 11c. The first counter electrode 11b is optically transparent. For example, the optical transmittance of the first counter electrode 11b is higher than the optical transmittance of the first electrode 11a.

[0035] For example, the first electrode 11a includes at least one selected from the group consisting of Al, Be, Mg, Zn, and C. For example, the first counter electrode 11b includes a compound including a first element and oxygen. The first element includes at least one selected from the group consisting of In and Zn. The first counter electrode 11b includes, for example, indium oxide or ITO.

[0036] As shown in Fig. 1(a) to Fig. 1(c) and Fig. 3 to Fig. 5, the element unit 10U may include a plurality of detection units 10D. The first detection unit 11D is one of the plurality of detection units 10D. One of the plurality of detection units 10D includes an electrode 10a, a counter electrode 10b, and an organic semiconductor layer 10c. At least a part of the organic semiconductor layer 10c is located between the electrode 10a and the counter electrode 10b.

[0037] 1(a) to 1(c), for example, the multiple detection units 10D include a second detection unit 12D. The second detection unit 12D includes a second electrode 12a, a second counter electrode 12b, and a second organic semiconductor layer 12c. At least a portion of the second organic semiconductor layer 12c is located between the second electrode 12a and the second counter electrode 12b.

[0038] As shown in FIG. 1(c), the wiring section 20 includes a second counter electrode layer 22b. The second counter electrode layer 22b is electrically connected to the second counter electrode 12b. The second electrode 12a is electrically connected to the first electrode layer 21a (see FIG. 1(b)). As shown in FIG. 1(c), in the first direction D1, a part of the first conductive layer 31 is between the first electrode layer 21a and the second counter electrode layer 22b. In the first direction D1, the second counter electrode layer 22b is between a part of the first conductive layer 31 and the second detection section 12D. The second counter electrode connection section 12bc electrically connects the second counter electrode 12b to the second counter electrode layer 22b. The second counter electrode connection section 12bc passes through a second conductive layer hole 32p provided in the second conductive layer 32.

[0039] 1(b), for example, the second electrode 12a is electrically connected to the first electrode layer 21a by a second electrode connection portion 12ac. The second electrode connection portion 12ac passes through another second conductive layer hole 32r provided in the second conductive layer 32 in the first direction D1.

[0040] As shown in FIG. 7, the first opposing electrode layer 21b extends along the second direction D2. The second direction D2 intersects with the first direction D1. In this example, the second direction D2 is the X-axis direction. The second opposing electrode layer 22b extends along the second direction D2. The direction from the second opposing electrode layer 22b to the first opposing electrode layer 21b is along the third direction D3 that intersects with the first direction D1 and the second direction D2. The third direction D3 is, for example, the Y-axis direction.

[0041] As shown in Fig. 7, the first opposing electrode layer 21b and the second opposing electrode layer 22b are linear. The potentials of the multiple opposing electrodes are controlled by the multiple linear opposing electrode layers. On the other hand, as shown in Fig. 8, the first conductive layer 31 is planar.

[0042] The area of ​​the first conductive layer 31 is larger than the area of ​​the first opposing electrode layer 21b. The area of ​​the first conductive layer 31 is the area of ​​the first conductive layer 31 in a plane (XY plane) perpendicular to the first direction D1. The area of ​​the first opposing electrode layer 21b is the area of ​​the first opposing electrode layer 21b in a plane (XY plane) perpendicular to the first direction D1. This allows the shielding effect of the first conductive layer 31 to be more effectively exerted. For example, the area of ​​the first conductive layer 31 is five times or more the area of ​​the first opposing electrode layer 21b.

[0043] 6, the second conductive layer 32 is planar. The area of ​​the second conductive layer 32 is larger than the area of ​​the first opposing electrode layer 21b. The area of ​​the second conductive layer 32 is the area of ​​the second conductive layer 32 in a plane (XY plane) perpendicular to the first direction D1. This allows the shielding effect of the second conductive layer 32 to be more effectively exerted. For example, the area of ​​the second conductive layer 32 is five times or more the area of ​​the first opposing electrode layer 21b.

[0044] The area of ​​the first conductive layer 31 is larger than the area of ​​the second opposing electrode layer 22b. The area of ​​the second conductive layer 32 is larger than the area of ​​the second opposing electrode layer 22b.

[0045] FIG. 11 is a schematic cross-sectional view illustrating the detector according to the first embodiment. 11, in the detector 111 according to the embodiment, the direction from the first electrode 11a to the first opposing electrode 11b intersects with the first direction D1. Except for this, the configuration of the detector 111 may be similar to that of the detector 110. In the detector 111, noise can also be suppressed. Stable detection becomes easier.

[0046] 12(a) to 12(c) are schematic cross-sectional views illustrating the detector according to the first embodiment. 13 to 21 are schematic plan views illustrating the detector according to the first embodiment. FIG. 12(a) is a cross-sectional view taken along the line P1-P2 in FIG. 13 to FIG. 21. FIG. 12(b) is a cross-sectional view taken along the line Q1-Q2 in FIG. 13 to FIG. 21. FIG. 12(c) is a cross-sectional view taken along the line R1-R2 in FIG. 13 to FIG. 21. As shown in FIG. 12(a), the insulating member 25 includes a first insulating region 25a and a second insulating region 25b. At least a portion of the first insulating region 25a is between the second conductive layer 32 and the first detection unit 11D in the first direction D1. At least a portion of the second insulating region 25b is between the first electrode layer 21a and the first conductive layer 31 in the first direction D1. FIG. 16 illustrates the first insulating region 25a. FIG. 20 illustrates the second insulating region 25b.

[0047] As shown in Fig. 12(a) and Fig. 12(b), in a detector 112 according to the embodiment, the first opposing electrode 11b is between a part of the first electrode 11a and another part of the first electrode 11a in a direction intersecting with the first direction D1. The configuration of the detector 112 other than this may be similar to that of the detector 110. Noise can also be suppressed in the detector 112. Stable detection becomes easier. As shown in Fig. 15, in this example, the first electrode 11a is annular. A control unit 70 may be provided in the detector 112.

[0048] 12(c), the first electrode connection portion 11ac passes through the first conductive layer hole 31o of the first conductive layer 31 along the first direction D1. The first electrode connection portion 11ac passes through the second conductive layer hole 32s of the second conductive layer 32 along the first direction D1. The second electrode connection portion 12ac passes through the first conductive layer hole 31p of the first conductive layer 31 along the first direction D1. The second electrode connection portion 12ac passes through the second conductive layer hole 32t of the second conductive layer 32 along the first direction D1.

[0049] In the detectors 111 and 112, the element portion 10U may include a base body 25s. At least a portion of the base body 25s is located between the first detection portion 11D and the first scintillator 41.

[0050] Second embodiment 22 to 24 are schematic cross-sectional views illustrating the detector according to the second embodiment. 22 to 24, in the detectors 120 to 122 according to the embodiment, the scintillators 40 (the first scintillator 41 and the second scintillator 42, etc.) are omitted. Except for this, the configuration of the detectors 120 to 122 may be similar to the configuration of the detectors 110 to 112. The detection target wave 81 may be light.

[0051] In the embodiment, the first organic semiconductor layer 11c includes, for example, a p-type region and an n-type region. The p-type region includes, for example, at least one of polythiophene and a derivative of polythiophene. The n-type region includes, for example, a fullerene derivative. In one example, the first organic semiconductor layer 11c includes, for example, poly(3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester. For example, the second organic semiconductor layer 12c includes the same material as the first organic semiconductor layer 11c.

[0052] The first scintillator 41 includes at least one selected from the group consisting of, for example, PVT (Polyvinyl toluene), PVK (Polyvinylcarbazole), and PMMA (Polymethyl methacrylate). For example, the second scintillator 42 includes the same material as the first scintillator 41.

[0053] The base 25s includes, for example, a resin, which includes at least one selected from the group consisting of PET (polyethylene terephthalate), PEN (polyethylene naphthalate), Polyimide, and PC (polycarbonate).

[0054] The insulating member 25 includes, for example, at least one selected from the group consisting of polyimide, liquid crystal polymer, and fluororesin.

[0055] In an embodiment, the detection target wave 81 may be at least one of beta rays, gamma rays, neutron rays, and x-rays.

[0056] The embodiment may include the following configurations (e.g., technical solutions). (Configuration 1) a first detection unit including a first electrode, a first counter electrode, and a first organic semiconductor layer, wherein at least a portion of the first organic semiconductor layer is between the first electrode and the first counter electrode; A wiring section; An element portion including The wiring portion is a first electrode layer electrically connected to the first electrode; a first counter electrode layer electrically connected to the first counter electrode; A first conductive layer; Including, In a first direction from the first electrode layer to the first counter electrode layer, the first counter electrode layer is between the first electrode layer and the first detection unit, A detector, wherein the first conductive layer is between the first electrode layer and the first counter electrode layer in the first direction.

[0057] (Configuration 2) 2. The detector of configuration 1, wherein the first conductive layer is electrically insulated from the first electrode layer and electrically insulated from the first counter electrode.

[0058] (Configuration 3) A control unit is further provided. the control unit is capable of setting the first opposing electrode layer to a first potential based on a potential of the first electrode layer; the control unit is capable of setting the first conductive layer to a second potential based on the potential of the first electrode layer; 3. The detector of configuration 1 or 2, wherein the second potential is the first potential or the second potential is between the potential of the first electrode layer and the first potential.

[0059] (Configuration 4) The control unit is a first circuit capable of setting the first opposing electrode layer to the first potential; a second circuit capable of setting the first conductive layer to the second potential; 4. The detector of claim 3, further comprising:

[0060] (Configuration 5) 5. A detector according to configuration 3 or 4, wherein the first potential and the second potential are negative.

[0061] (Configuration 6) the wiring portion further includes a second conductive layer electrically connected to the first conductive layer, The detector of any one of configurations 1 to 5, wherein in the first direction, at least a portion of the second conductive layer is between the at least a portion of the first opposing electrode layer and the first detection portion.

[0062] (Configuration 7) The wiring portion includes a first counter electrode connection portion, the second conductive layer includes a second conductive layer hole; the first counter electrode connection portion passes through the second conductive layer hole in the first direction, 7. The detector of configuration 6, wherein the first counter electrode connection electrically connects the first counter electrode to the first counter electrode layer.

[0063] (Configuration 8) The wiring portion includes a first conductive layer connection portion, The detector of configuration 6 or 7, wherein the first conductive layer connection electrically connects the second conductive layer to the first conductive layer.

[0064] (Configuration 9) the wiring portion includes a first electrode connection portion, the first conductive layer includes a first conductive layer hole; the first electrode connection portion passes through the first conductive layer hole in the first direction; The detector according to any one of configurations 1 to 8, wherein the first electrode connection portion electrically connects the first electrode to the first electrode layer.

[0065] (Configuration 10) The wiring portion further includes an insulating member, The detector of any one of configurations 1 to 9, wherein at least a portion of the insulating member is provided between the first electrode layer and the first conductive layer, between the first conductive layer and the first opposing electrode layer, and between the first opposing electrode layer and the element portion.

[0066] (Configuration 11) The element unit further includes a second detection unit, the second detection unit includes a second electrode, a second counter electrode, and a second organic semiconductor layer; At least a portion of the second organic semiconductor layer is between the second electrode and the second counter electrode, the wiring portion further includes a second opposing electrode layer electrically connected to the second opposing electrode, the second electrode being electrically connected to the first electrode layer, In the first direction, a portion of the first conductive layer is between the first electrode layer and the second counter electrode layer, 11. The detector of any one of configurations 1 to 10, wherein in the first direction, the second opposing electrode layer is between the portion of the first conductive layer and the second detection portion.

[0067] (Configuration 12) the first opposing electrode layer extends along a second direction intersecting the first direction, The second opposing electrode layer extends along the second direction, 12. The detector of claim 11, wherein a direction from the second opposing electrode layer to the first opposing electrode layer is along a third direction that intersects the first direction and the second direction.

[0068] (Configuration 13) 13. The detector of any one of configurations 1 to 12, wherein an area of ​​the first conductive layer in a plane perpendicular to the first direction is larger than an area of ​​the first counter electrode layer in a plane perpendicular to the first direction.

[0069] (Configuration 14) 14. The detector according to any one of configurations 1 to 13, wherein in the first direction, the first electrode is between the wiring portion and the first counter electrode.

[0070] (Configuration 15) 15. The detector of configuration 14, wherein the first electrode is between the first conductive layer and the first counter electrode in the first direction.

[0071] (Configuration 16) 16. The detector of any one of configurations 14 to 15, wherein the first counter electrode has a higher optical transmittance than the first electrode.

[0072] (Configuration 17) 14. The detector of any one of configurations 1 to 13, wherein a direction from the first electrode to the first counter electrode intersects with the first direction.

[0073] (Configuration 18) 14. The detector according to any one of configurations 1 to 13, wherein the first opposing electrode is between a part of the first electrode and another part of the first electrode in a direction intersecting the first direction.

[0074] (Configuration 19) The element portion further includes a first scintillator, 19. The detector according to any one of configurations 1 to 18, wherein the first detection section is between the wiring section and the first scintillator.

[0075] (Configuration 20) The element portion further includes a base, 20. The detector of claim 19, wherein at least a portion of the substrate is between the first detection portion and the first scintillator.

[0076] According to the embodiment, a detector capable of stable detection can be provided.

[0077] In this specification, "electrically connected" includes a state in which multiple conductors are in physical contact with each other and a current flows between the multiple conductors. "Electrically connected" includes a state in which a conductor is inserted between multiple conductors and a current flows between the multiple conductors.

[0078] In this specification, "vertical" and "parallel" do not only mean strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may mean substantially vertical and substantially parallel.

[0079] The above describes the embodiment of the present invention with reference to examples. However, the present invention is not limited to these examples. For example, the specific configurations of each element, such as the electrodes, conductive layer, organic semiconductor layer, scintillator layer, and control unit, included in the detector are included in the scope of the present invention as long as a person skilled in the art can implement the present invention in the same way and obtain the same effect by appropriately selecting from the known range.

[0080] Any combination of two or more elements of each example, within the scope of technical feasibility, is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0081] All detectors that can be implemented by those skilled in the art by appropriately modifying the design based on the detector described above as an embodiment of the present invention are within the scope of the present invention as long as they include the gist of the present invention.

[0082] Within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and it is understood that these modifications and alterations also fall within the scope of the present invention.

[0083] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0084] 10D...detection section, 10U...element section, 10a...electrode, 10b...counter electrode, 10c...organic semiconductor layer, 11D, 12D...first and second detection sections, 11a, 12a...first and second electrodes, 11ac, 12ac...first and second electrode connection sections, 11bc...first counter electrode connection section, 11b, 12b...first and second counter electrodes, 11c, 12c...first and second organic semiconductor layers, 20...wiring section, 21a...first electrode layer, 21b, 22b...first and second counter electrode layers, 25...insulating member, 25a, 25b...first and second insulating regions, 25s...base, 31, 32...first and second conductive layers, 31c...first conductive layer connection section, 31o, 31p...first conductive layer hole, 32o-32t...second conductive layer hole, 40...scintillator, 41, 42...first and second scintillators, 70...control unit, 71, 72...first and second circuits, 81...detection target wave, 110-112, 120-122...detectors, D1-D3...first to third directions, sg1...signal, V0...electric potential, V1, V2...first and second electric potentials

Claims

1. a first detection unit including a first electrode, a first counter electrode, and a first organic semiconductor layer, wherein at least a portion of the first organic semiconductor layer is between the first electrode and the first counter electrode; A wiring section; An element portion including: A control unit; Equipped with The wiring portion is a first electrode layer electrically connected to the first electrode; a first counter electrode layer electrically connected to the first counter electrode; A first conductive layer; Including, In a first direction from the first electrode layer to the first counter electrode layer, the first counter electrode layer is between the first electrode layer and the first detection unit, the first conductive layer is between the first electrode layer and the first counter electrode layer in the first direction; the control unit is capable of setting the first opposing electrode layer to a first potential based on a potential of the first electrode layer; the control unit is capable of setting the first conductive layer to a second potential based on the potential of the first electrode layer; The second potential is the first potential or the second potential is between the potential of the first electrode layer and the first potential.

2. the wiring portion further includes a second conductive layer electrically connected to the first conductive layer, The detector according to claim 1 , wherein in the first direction, at least a portion of the second conductive layer is between at least a portion of the first counter electrode layer and the first detection portion.

3. The wiring portion includes a first conductive layer connection portion, The detector of claim 2 , wherein the first conductive layer connection electrically connects the second conductive layer to the first conductive layer.

4. the wiring portion includes a first electrode connection portion, the first conductive layer includes a first conductive layer hole; the first electrode connection portion passes through the first conductive layer hole in the first direction; The detector according to claim 1 , wherein the first electrode connection portion electrically connects the first electrode to the first electrode layer.

5. The detector according to claim 1 , wherein an area of ​​the first conductive layer in a plane perpendicular to the first direction is larger than an area of ​​the first counter electrode layer in a plane perpendicular to the first direction.

6. The detector according to claim 1 , wherein in the first direction, the first electrode is located between the wiring portion and the first opposing electrode.

7. The detector according to claim 1 , wherein a direction from the first electrode to the first counter electrode intersects with the first direction.

8. The detector according to claim 1 , wherein the first opposing electrode is between a part of the first electrode and another part of the first electrode in a direction intersecting the first direction.

9. The element portion further includes a first scintillator, The detector according to any one of claims 1 to 8, wherein the first detection portion is between the wiring portion and the first scintillator.

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