Array type semiconductor laser device

Abstract

An arrayed semiconductor laser device (200) comprises: a second electrode (p-electrode (P11)) formed on a semiconductor layer (321) of another conductivity type; a third electrode (n-electrode (N11)) formed on a semiconductor layer (300) of one conductivity type and disposed between a first electrode (p-electrode (P10)) and the second electrode; a fifth electrode (n-electrode (N12)) formed on a semiconductor layer (301) of one conductivity type and disposed between the third electrode and the second electrode; a sixth electrode (n-electrode (N13)) formed on the semiconductor layer (301) of the one conductivity type and disposed opposite the fifth electrode; a first electrical conductor (wire (W2)) electrically connecting the second electrode and the third electrode; and a second electrical conductor (n-wiring (N21)) electrically connecting the fifth electrode and the sixth electrode.

Description

[Technical field]

[0001] The present disclosure relates to an array-type semiconductor laser device. [Background technology]

[0002] Conventionally, there is an array-type semiconductor laser array element having a plurality of light-emitting element regions (see, for example, Patent Document 1).

[0003] Patent Document 1 discloses a configuration in which each light-emitting element region of a semiconductor laser array element is electrically connected in series. Therefore, a current is injected in series into each light-emitting element region of the semiconductor laser array element disclosed in Patent Document 1. This makes it possible to suppress the drive current compared to the case in which a current is injected in parallel into each light-emitting element region of the semiconductor laser array element. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 9-167878 Summary of the Invention [Problem to be solved by the invention]

[0005] However, in the configuration disclosed in Patent Document 1, due to the arrangement of the p-side electrode and the n-side electrode, the current flowing in the active layer (light-emitting layer) is biased toward the n-side electrode, and therefore the light-emitting point in the active layer is biased toward the n-side electrode.

[0006] The present disclosure provides an array-type semiconductor laser device in which a plurality of semiconductor laser elements are connected in series and in which bias in the current flowing through the active layer is suppressed. [Means for solving the problem]

[0007] A semiconductor laser device according to an aspect of the present disclosure is an array-type semiconductor laser device including a semiconductor laser array element in which a first semiconductor laser element and a second semiconductor laser element are formed on a substrate, the first semiconductor laser element having a first one-conductivity type semiconductor layer and a first other-conductivity type semiconductor layer from the substrate side, the second semiconductor laser element having a second one-conductivity type semiconductor layer and a second other-conductivity type semiconductor layer from the substrate side, the first semiconductor laser element having a first waveguide extending in a first direction in the substrate plane, the second semiconductor laser element being disposed in a second direction in the substrate plane perpendicular to the first direction with respect to the first semiconductor laser element, the second semiconductor laser element having a second waveguide extending in the first direction, and the first semiconductor laser element having a second waveguide formed in the first other-conductivity type semiconductor layer on a first surface opposite to the substrate. the first semiconductor laser element has a first electrode, on the first surface, the second semiconductor laser element has a second electrode formed on the second other-conductivity type semiconductor layer, the first semiconductor laser element has a third electrode formed on the first one-conductivity type semiconductor layer and arranged between the first electrode and the second electrode, and a fourth electrode formed on the first one-conductivity type semiconductor layer and arranged on the opposite side to the third electrode, the second semiconductor laser element has a fifth electrode formed on the second one-conductivity type semiconductor layer and arranged between the third electrode and the second electrode, and a sixth electrode formed on the second one-conductivity type semiconductor layer and arranged on the opposite side to the fifth electrode, and the array-type semiconductor laser device has a first conductor electrically connecting the second electrode and the third electrode, and a second conductor electrically connecting the fifth electrode and the sixth electrode. Effect of the Invention

[0008] According to an array-type semiconductor laser device according to an aspect of the present disclosure, a plurality of semiconductor laser elements are connected in series, and bias of the light-emitting points is suppressed. [Brief description of the drawings]

[0009] [Figure 1]FIG. 1 is a top view showing an array-type semiconductor laser device according to the first embodiment. [Diagram 2] FIG. 2 is a cross-sectional view showing the array-type semiconductor laser device according to the first embodiment taken along line II-II in FIG. [Diagram 3] FIG. 3 is a bottom view of the semiconductor laser array device according to the first embodiment. [Figure 4] FIG. 4 is a top view showing the submount according to the first embodiment. [Diagram 5] FIG. 5 is a cross-sectional view showing the semiconductor laser array device according to the first embodiment taken along the line XII-XII in FIG. [Figure 6] FIG. 6 is an enlarged view of the area enclosed by dashed line VI in FIG. [Figure 7] FIG. 7 is a cross-sectional view showing a connection portion between the semiconductor laser array element and the base according to the first embodiment. [Figure 8] FIG. 8 is a cross-sectional view showing a bonding layer between the base and the heat sink according to the first embodiment. [Figure 9] FIG. 9 is a cross-sectional view showing a semiconductor laser array device according to a first modification of the first embodiment. [Figure 10] FIG. 10 is an enlarged view showing the area surrounded by the dashed line X in FIG. [Figure 11] FIG. 11 is a top view showing an array-type semiconductor laser device according to a second modification of the first embodiment. [Figure 12] FIG. 12 is a top view showing an array-type semiconductor laser device according to a third modification of the first embodiment. [Figure 13] FIG. 13 is a top view showing an array-type semiconductor laser device according to the second embodiment. [Figure 14] FIG. 14 is a top view showing an array-type semiconductor laser device according to the third embodiment. [Figure 15] FIG. 15 is a top view showing a submount according to the third embodiment. [Figure 16] FIG. 16 is a bottom view showing the semiconductor laser array device according to the third embodiment. [Figure 17] 17 is a cross-sectional view showing a semiconductor laser device according to the third embodiment taken along the line XVII-XVII in FIG. [Figure 18] 18 is a cross-sectional view showing an array-type semiconductor laser device according to the third embodiment taken along the line XVIII-XVIII in FIG. [Figure 19] FIG. 19 is a top view showing an array-type semiconductor laser device according to a first modification of the third embodiment. [Figure 20] FIG. 20 is a cross-sectional view showing an array-type semiconductor laser device according to a first modification of the third embodiment, taken along the line XX-XX in FIG. [Figure 21] FIG. 21 is a cross-sectional view showing an insulating film and a connecting film according to Modification 1 of Embodiment 3, taken along line XXI-XXI in FIG. [Figure 22] FIG. 22 is a cross-sectional view showing an insulating film and a connecting film according to Modification 1 of Embodiment 3 taken along the line XXII-XXII of FIG. [Figure 23] FIG. 23 is a top view showing an array-type semiconductor laser device according to the fourth embodiment. [Figure 24] 24 is a cross-sectional view showing an array-type semiconductor laser device according to the fourth embodiment taken along the line XXIV-XXIV in FIG. [Diagram 25] 25 is a cross-sectional view showing an array-type semiconductor laser device according to the fourth embodiment taken along the line XXV-XXV of FIG. [Figure 26] FIG. 26 is a top view showing a submount according to the fourth embodiment. [Figure 27] FIG. 27 is a bottom view showing the submount according to the fourth embodiment. [Figure 28] FIG. 28 is an enlarged view of the area enclosed by the dashed line XXVIII in FIG. [Figure 29] FIG. 29 is an enlarged view showing the area surrounded by dashed line XXIX in FIG. [Diagram 30] FIG. 30 is a cross-sectional view including a second conductor of an array-type semiconductor laser device according to a first modification of the fourth embodiment. [Diagram 31] FIG. 31 is a cross-sectional view including a first conductor of an array-type semiconductor laser device according to a first modification of the fourth embodiment. [Diagram 32] FIG. 32 is a cross-sectional view including a second conductor of an array-type semiconductor laser device according to a second modification of the fourth embodiment. [Diagram 33] FIG. 33 is a cross-sectional view including a first conductor of an array-type semiconductor laser device according to a second modification of the fourth embodiment. [Diagram 34] FIG. 34 is a top view showing an array-type semiconductor laser device according to a third modification of the fourth embodiment. [Diagram 35] FIG. 35 is a cross-sectional view showing an array-type semiconductor laser device according to a third modification of the fourth embodiment, taken along the line XXXV-XXXV of FIG. [Diagram 36] FIG. 36 is a top view showing a submount according to the third modification of the fourth embodiment. [Figure 37] FIG. 37 is a bottom view showing a submount according to the third modification of the fourth embodiment. [Figure 38] FIG. 38 is a top view showing an array-type semiconductor laser device according to a fourth modification of the fourth embodiment. [Figure 39] FIG. 39 is a cross-sectional view showing an array-type semiconductor laser device according to a fourth modification of the fourth embodiment, taken along the line XXXIX-XXXIX in FIG. [Diagram 40] FIG. 40 is a top view showing a submount according to the fourth modification of the fourth embodiment. [Diagram 41] FIG. 41 is a top view showing an array-type semiconductor laser device according to the fifth embodiment. [Diagram 42] FIG. 42 is a top view showing a semiconductor laser array device according to the fifth embodiment. [Diagram 43] 43 is a cross-sectional view showing an array-type semiconductor laser device according to the fifth embodiment taken along the line XLIV-XLIV in FIG. [Diagram 44] 44 is a cross-sectional view showing an array-type semiconductor laser device according to the fifth embodiment taken along the line XLIII-XLIII in FIG. [Diagram 45] FIG. 45 is a top view showing a submount according to the fifth embodiment. [Figure 46] FIG. 46 is a bottom view showing the submount according to the fifth embodiment. [Figure 47] FIG. 47 is a bottom view showing the semiconductor laser array device according to the fifth embodiment. [Figure 48] FIG. 48 is a cross-sectional view showing a semiconductor laser array device according to the fifth embodiment taken along the line XLVIII-XLVIII in FIG. [Figure 49] FIG. 49 is a cross-sectional view showing a semiconductor laser array device according to the fifth embodiment taken along the line XLIX-XLIX in FIG. [Figure 50] FIG. 50 is an enlarged view showing the area surrounded by the dashed line L in FIG. [Figure 51] FIG. 51 is a top view showing an array-type semiconductor laser device according to a first modification of the fifth embodiment. [Figure 52] FIG. 52 is a cross-sectional view showing an array-type semiconductor laser device according to a first modification of the fifth embodiment, taken along the line LII-LII in FIG. [Diagram 53] FIG. 53 is a top view showing an array-type semiconductor laser device according to the sixth embodiment. [Figure 54] FIG. 54 is a bottom view showing a semiconductor laser array device according to the sixth embodiment. [Figure 55] 55 is a cross-sectional view including second conductors of an array-type semiconductor laser device according to the sixth embodiment, taken along the line LV-LV in FIG. [Figure 56] 56 is a cross-sectional view showing an array-type semiconductor laser device according to the sixth embodiment, taken along the line LVI-LVI in FIG. [Figure 57] 57 is a cross-sectional view of an array-type semiconductor laser device according to the sixth embodiment, taken along the line LVII-LVII in FIG. 53, including a first conductor. [Figure 58] FIG. 58 is a bottom view showing a semiconductor laser array device according to the first modification of the sixth embodiment. [Figure 59]FIG. 59 is a cross-sectional view of the semiconductor laser array device according to the first modification of the sixth embodiment, taken along the line LIX-LIX in FIG. 58, including the second conductor. [Figure 60] FIG. 60 is a cross-sectional view showing a semiconductor laser array device according to Modification 1 of the sixth embodiment, taken along the line LX-LX of FIG. [Figure 61] FIG. 61 is a cross-sectional view of the semiconductor laser array device according to the first modification of the sixth embodiment, taken along the line LXI-LXI in FIG. [Figure 62] FIG. 62 is a bottom view showing a semiconductor laser array device according to the second modification of the sixth embodiment. [Figure 63] 63 is a cross-sectional view of a semiconductor laser array device according to the second modification of the sixth embodiment, taken along the line LXIII-LXIII in FIG. 62, including a second conductor. [Figure 64] FIG. 64 is a cross-sectional view showing a semiconductor laser array device according to Modification 2 of Embodiment 6, taken along line LXIV-LXIV in FIG. [Figure 65] FIG. 65 is a cross-sectional view including a first conductor of a semiconductor laser array device according to the second modification of the sixth embodiment, taken along the line LXV-LXV in FIG. [Figure 66] FIG. 66 is a top view showing an array-type semiconductor laser device according to the seventh embodiment. [Figure 67] FIG. 67 is a bottom view showing a semiconductor laser array device according to the sixth embodiment. [Figure 68] FIG. 68 is a cross-sectional view showing an array-type semiconductor laser device according to the seventh embodiment, taken along the line LXVIII-LXVIII in FIG. [Figure 69] FIG. 69 is a cross-sectional view of the array-type semiconductor laser device according to the seventh embodiment, taken along the line LXIX-LXIX in FIG. 66, including the second conductor. [Figure 70] FIG. 70 is a bottom view showing a semiconductor laser array device according to a modification of the seventh embodiment. [Figure 71]FIG. 71 is a cross-sectional view taken along the line LXXI-LXXI in FIG. 70, including a first conductor of a semiconductor laser array device according to a modification of the seventh embodiment. [Figure 72] FIG. 72 is a cross-sectional view showing a semiconductor laser array device according to a modification of the seventh embodiment, taken along the line LXXII-LXXII in FIG. [Figure 73] FIG. 73 is a top view showing an array-type semiconductor laser device according to the eighth embodiment. [Figure 74] FIG. 74 is a bottom view showing a semiconductor laser array device according to the eighth embodiment. [Figure 75] FIG. 75 is a cross-sectional view showing an array-type semiconductor laser device according to the eighth embodiment, taken along the line LXXV-LXXV in FIG. [Figure 76] FIG. 76 is a cross-sectional view including a first conductor of an array-type semiconductor laser device according to the eighth embodiment, taken along the line LXXVI-LXXVI in FIG. [Figure 77] FIG. 77 is a bottom view showing a semiconductor laser array device according to a modification of the eighth embodiment. [Figure 78] FIG. 78 is a cross-sectional view taken along line LXXVIII-LXXVIII in FIG. 77, showing a semiconductor laser array device according to a modification of the eighth embodiment. [Figure 79] FIG. 79 is a cross-sectional view showing a semiconductor laser array device according to a modification of the eighth embodiment, taken along the line LXXIX-LXXIX in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. Note that each of the embodiments described below shows a specific example of the present disclosure. The numerical values, shapes, materials, components, arrangement and connection of the components, steps, order of steps, and the like shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0011] Note that each figure is a schematic diagram and is not necessarily precisely illustrated. Therefore, for example, the scales and the like do not necessarily match in each figure. Furthermore, in each figure, the same reference numerals are given to substantially the same configurations, and duplicated explanations of the substantially same configurations may be omitted or simplified.

[0012] In the following embodiments, expressions using numerical values ​​such as "4 μm" are used. For example, "4 μm" does not only mean that it is exactly 4 μm, but also means that it is substantially 4 μm, that is, it means that it includes a difference of, for example, about several percent. It may include a difference of up to about 50%. The same applies to expressions using other numerical values.

[0013] In the following embodiments, expressions using "approximately" such as "almost the same" are used. For example, "approximately" does not only mean completely the same, but also means substantially the same, that is, including a difference of, for example, about a few percent. It may include a difference of up to about 50%.

[0014] In the following embodiments, the terms "upward" and "downward" do not refer to the upward direction (vertically upward) and downward direction (vertically downward) in absolute spatial recognition. The terms "upward" and "downward" are applied not only to the case where two components are arranged at a distance from each other and another component is present between the two components, but also to the case where two components are arranged closely to each other and are in contact with each other. In the following embodiments, the positive direction of the Z axis is described as "upward" and the negative direction of the Z axis is described as "downward". The resonator length direction of the semiconductor laser element (extension direction of the waveguide) is described as the Y axis direction or the first direction. The direction perpendicular to the Y axis and Z axis is the X axis direction, which is also called the lateral direction or the second direction.

[0015] In the following embodiments, "thickness" and "height" refer to the length in the Z-axis direction.

[0016] In addition, in this disclosure, one of the n-type and p-type is referred to as one conductivity type, and the other is referred to as the other conductivity type. In the following embodiments, the n-type may be referred to as one conductivity type, and the p-type may be referred to as the other conductivity type, but this disclosure does not exclude a structure in which the n-type and p-type are reversed.

[0017] (Summary of the Disclosure) The array type semiconductor laser device is an array type semiconductor laser device that includes a plurality of semiconductor laser elements.

[0018] For example, an array-type semiconductor laser device includes a semiconductor laser array element in which a first semiconductor laser element and a second semiconductor laser element are formed on the same substrate.

[0019] The first semiconductor laser element has, from the substrate side, a first one conductivity type semiconductor layer and a first other conductivity type semiconductor layer.

[0020] The first semiconductor laser element has a first waveguide extending in a first direction within the substrate surface, and has a first electrode formed in a first other-conductivity-type semiconductor layer on a first surface opposite the substrate, and has a third electrode formed in the first one-conductivity-type semiconductor layer on the first surface and arranged between the first electrode and a second electrode (a second electrode of a second semiconductor laser element described later), and a fourth electrode formed in the first one-conductivity-type semiconductor layer and arranged opposite the third electrode.

[0021] The second semiconductor laser element has a second one-conductivity type semiconductor layer and a second other-conductivity type semiconductor layer from the substrate side. The second semiconductor laser element is disposed in a second direction in the substrate plane perpendicular to the first direction with respect to the first semiconductor laser element. The second semiconductor laser element has a second waveguide extending in the first direction, and has a second electrode formed in the second other-conductivity type semiconductor layer on the first surface. The second semiconductor laser element has a fifth electrode formed in the second one-conductivity type semiconductor layer and disposed between the third electrode and the second electrode, and a sixth electrode formed in the second one-conductivity type semiconductor layer and disposed on the opposite side to the fifth electrode.

[0022] Here, the array-type semiconductor laser device according to the present disclosure has a first conductor electrically connecting the second electrode and the third electrode, and a second conductor electrically connecting the fifth electrode and the sixth electrode.

[0023] According to this, the plurality of semiconductor laser elements included in the array-type semiconductor laser device are connected in series, and current can be applied to the one-conductivity-type semiconductor layer and the other semiconductor layer (more specifically, the waveguide or the active layer described later) of each of the first and second semiconductor laser elements in the second direction without bias. Therefore, according to the array-type semiconductor device according to the present disclosure, bias of the light emitting points (the waveguide or the active layer described later) of the first and second semiconductor laser elements can be suppressed.

[0024] Hereinafter, the embodiments and modifications of the array-type semiconductor laser device according to the present disclosure will be described in detail.

[0025] In the following description, the Y-axis direction may be referred to as a first direction, and the X-axis direction may be referred to as a second direction.

[0026] In the following description, the side from which the semiconductor laser element outputs laser light is also referred to as the front, and the opposite side is also referred to as the rear. For example, in the following description, the positive Y-axis direction with respect to the semiconductor laser element is also referred to as the front, and the negative Y-axis direction is also referred to as the rear.

[0027] The first electrode of the semiconductor laser element is also referred to as p-electrode P10, the second electrode as p-electrode P11, the third electrode as n-electrode N11, the fourth electrode as n-electrode N10, the fifth electrode as n-electrode N12, and the sixth electrode as n-electrode N13.

[0028] The conductor electrically connecting the p-electrode P11 and the n-electrode N11 is also referred to as a first conductor, and the conductor electrically connecting the n-electrode N12 and the n-electrode N13 is also referred to as a second conductor.

[0029] (Embodiment 1) [composition] FIG. 1 is a top view showing an array-type semiconductor laser device 200 according to the first embodiment. FIG. 2 is a cross-sectional view showing the array-type semiconductor laser device 200 according to the first embodiment, taken along line II-II in FIG. 1. FIG. 3 is a bottom view of a semiconductor laser array element 100 according to the first embodiment. FIG. 4 is a top view showing a submount 220 according to the first embodiment. FIG. 5 is a cross-sectional view showing the semiconductor laser array element 100 according to the first embodiment. FIG. 6 is an enlarged view showing a region surrounded by a dashed line VI in FIG. 5.

[0030] The array-type semiconductor laser device 200 is an array-type semiconductor laser device in which a semiconductor laser element 120, a semiconductor laser element 130, and a semiconductor laser element 140 are formed on a substrate 10 so as to be electrically isolated from one another.

[0031] The semiconductor laser element 120, the semiconductor laser element 130, and the semiconductor laser element 140 being electrically isolated from each other means, for example, that the one-conductivity type semiconductor layers, the active layers, and the other-conductivity type semiconductor layers of the semiconductor laser element 120, the semiconductor laser element 130, and the semiconductor laser element 140 are not in direct contact with each other (in other words, are physically separated), and the semiconductor laser element 120 and the semiconductor laser element 130 (and the semiconductor laser element 130 and the semiconductor laser element 140) are electrically connected via external wiring. For example, in the semiconductor laser element 120, the one-conductivity type semiconductor layer 300 is connected to the other-conductivity type semiconductor layer 320 via the active layer 310 without via an external wiring.

[0032] Moreover, the semiconductor laser element 120, the semiconductor laser element 130, and the semiconductor laser element 140 are electrically connected in series in this order. For example, the one-conductivity type semiconductor layer 300 in the semiconductor laser element 120 and the one-conductivity type semiconductor layer 301 in the semiconductor laser element 130 are electrically connected via an active layer 311.

[0033] The array-type semiconductor laser device 200 includes a substrate 10 , a semiconductor laser array element 100 , and a base 20 .

[0034] The substrate 10 is a semiconductor substrate on whose underside the semiconductor laser array element 100 is formed. The substrate 10 is, for example, a GaAs substrate. A barrier layer 810 is formed on the substrate 10.

[0035] The barrier layer 810 is an electrically insulating layer. The barrier layer 810 is formed between the substrate 10 and the one-conductivity type semiconductor layer 300, between the substrate 10 and the one-conductivity type semiconductor layer 301, and between the substrate 10 and the one-conductivity type semiconductor layer 302. The barrier layer 810 is, for example, an i-GaAs layer. The thickness L6 of the barrier layer 810 is, for example, 5 μm or more.

[0036] The semiconductor laser array element 100 is a semiconductor laser element having a plurality of waveguides 330, 331, 332 (and a light emitting point) and outputting a plurality of laser beams. The light emitting point is a position where the semiconductor laser array element 100 emits laser beams, for example, the position of the waveguides 330 to 332 shown in FIG. 2. The semiconductor laser array element 100 has a plurality of semiconductor laser elements 110. In this embodiment, the semiconductor laser array element 100 has a semiconductor laser element 120 (first semiconductor laser element), a semiconductor laser element 130 (second semiconductor laser element), and a semiconductor laser element 140 (third semiconductor laser element). The semiconductor laser element 120 has an n-electrode N10, a p-electrode P10, and an n-electrode N11. The semiconductor laser element 130 has an n-electrode N12, a p-electrode P11, and an n-electrode N13. Moreover, the semiconductor laser device 140 includes an n-electrode N14, a p-electrode P12, and an n-electrode N15. The width in the X-axis direction of the waveguides 330 to 332 is approximately equal to the width in the X-axis direction of the p-electrodes P10 to P12.

[0037] When the semiconductor laser element 120, the semiconductor laser element 130, and the semiconductor laser element 140 are described in common, they are also simply referred to as the semiconductor laser element 110.

[0038] The number of semiconductor laser elements 110 included in the semiconductor laser array element 100 is not particularly limited as long as it is plural. The semiconductor laser elements 110 included in the semiconductor laser array element 100 are connected in series. Therefore, the semiconductor laser element 120 and the semiconductor laser element 130 are connected in series.

[0039] The semiconductor laser element 120 has, from the substrate 10 side, one conductivity type semiconductor layer 300 (first one conductivity type semiconductor layer), an active layer 310, and another conductivity type semiconductor layer 320 (first other conductivity type semiconductor layer). The semiconductor laser element 120 also has a waveguide 330 (first waveguide) extending in a first direction (Y-axis direction in this embodiment) in the plane of the substrate 10. The waveguide 330 is a laser light guide portion constituted by, for example, a part of each of the one conductivity type semiconductor layer 300, the active layer 310, and the other conductivity type semiconductor layer 320.

[0040] Moreover, the semiconductor laser device 120 has a p-electrode P10 (first electrode), an n-electrode N11 (third electrode), and an n-electrode N10 (fourth electrode).

[0041] The p-electrode P10 is an electrode formed so as to be electrically connected to the other conductivity type semiconductor layer 320 on the surface located opposite the substrate 10 (also referred to as the lower surface or first surface 40).

[0042] The n-electrode N11 is an electrode formed on the first surface 40 so as to be electrically connected to the one-conductivity-type semiconductor layer 300, and is disposed between the p-electrodes P10 and P11.

[0043] The n-electrode N10 is an electrode formed on the first surface 40 of the one-conductivity-type semiconductor layer 300, and is arranged on the opposite side of the p-electrode P10 to the n-electrode N11. In other words, the p-electrode P10 is located between the n-electrodes N11 and N10 in a top view.

[0044] As shown in FIG. 6, the thickness L5 of the one conductivity type semiconductor layer 300 between the barrier layer 810 and the n-electrode N10 is, for example, 5 μm or more.

[0045] The semiconductor laser element 120 also includes an insulating film 340 , a protective film 350 , and a wiring electrode 360 ​​.

[0046] The insulating film 340 is an electrically insulating film. The insulating film 340 covers the side surfaces of semiconductor layers such as the one conductivity type semiconductor layer 300, the active layer 310, and the other conductivity type semiconductor layer 320. The width L7 of the insulating film 340 in the X-axis direction is, for example, 15 μm or more.

[0047] The protective film 350 is a film that covers the insulating film 340 and protects the insulating film 340 and each semiconductor layer.

[0048] The wiring electrode 360 ​​is an electrode for electrically connecting the n-electrodes N10, N11 and the p-electrode P10 to other components such as wiring formed on the base 20.

[0049] The thickness L8 of the wiring electrode 360 ​​is, for example, 3 μm or more.

[0050] The semiconductor laser element 130 and the semiconductor laser element 140 have the same configuration as the semiconductor laser element 120 shown in FIG.

[0051] The semiconductor laser element 130 has one conductivity type semiconductor layer 301 (second one conductivity type semiconductor layer), an active layer 311, and another conductivity type semiconductor layer 321 (second other conductivity type semiconductor layer) from the substrate 10 side. The semiconductor laser element 130 also has a waveguide 331 (second waveguide) extending in a first direction.

[0052] The semiconductor laser device 130 also has a p-electrode P11 (second electrode), an n-electrode N12 (fifth electrode), and an n-electrode N13 (sixth electrode).

[0053] The p-electrode P11 is an electrode formed on the other conductivity type semiconductor layer 321 on the first surface 40.

[0054] The n-electrode N12 is an electrode formed on the first surface 40 of the one conductivity type semiconductor layer 301, and is disposed between the n-electrode N11 and the p-electrode P11.

[0055] The n-electrode N13 is an electrode formed on the first surface 40 of the one conductivity type semiconductor layer 301, and is arranged on the opposite side of the p-electrode P11 to the n-electrode N12.

[0056] The semiconductor laser element 140 has one conductivity type semiconductor layer 302 (third one conductivity type semiconductor layer), an active layer 312, and another conductivity type semiconductor layer 322 (third other conductivity type semiconductor layer) from the substrate 10 side. The semiconductor laser element 140 also has a waveguide 332 (third waveguide) extending in a first direction.

[0057] The semiconductor laser device 140 also has a p-electrode P12, an n-electrode N14, and an n-electrode N15.

[0058] The p-electrode P12 is an electrode formed on the other conductivity type semiconductor layer 322 on the first surface 40.

[0059] The n-electrode N14 and the n-electrode N15 are formed on the first surface 40 of the one conductivity type semiconductor layer 302.

[0060] 3, the semiconductor laser elements 130 are arranged side by side with the semiconductor laser elements 120 in a second direction (X-axis direction in this embodiment) in the substrate 10 surface perpendicular to the first direction. In top view, the n-electrode N15, the p-electrode P12, the n-electrode N14, the n-electrode N13, the p-electrode P11, the n-electrode N12, the n-electrode N11, the p-electrode P10, and the n-electrode N10 are each rectangular, and are arranged side by side in this order parallel to the X-axis direction. In addition, in FIG. 3, when the semiconductor laser array element 100 is viewed from the bottom, the n-electrode N15, the p-electrode P12, the n-electrode N14, the n-electrode N13, the p-electrode P11, the n-electrode N12, the n-electrode N11, the p-electrode P10, and the n-electrode N10 are formed in a rectangular shape substantially the same as that of the wiring electrodes 360, and are covered by the wiring electrodes 360. Moreover, the portion of the lower surface of the semiconductor laser array element 100 where the wiring electrodes 360 are not exposed is covered with a protective film 350 .

[0061] Furthermore, for example, at least one of the semiconductor laser element 120 and the semiconductor laser element 130 oscillates in multiple transverse modes. For example, the widths of the waveguides 330 and 331 of at least one of the semiconductor laser element 120 and the semiconductor laser element 130 are adjusted so that the semiconductor laser element 120 and the semiconductor laser element 130 oscillates in multiple transverse modes.

[0062] Moreover, one conductivity type semiconductor layer 300 and one conductivity type semiconductor layer 301 each include an n-type semiconductor layer, and the other conductivity type semiconductor layer 320 and other conductivity type semiconductor layer 321 each include a p-type semiconductor layer.

[0063] The submount 220 is a base 20 on which pattern wiring is formed. The base 20 (first base) is a substrate on whose upper surface (second surface 50) the semiconductor laser array element 100 is arranged (mounted). In this embodiment, the semiconductor laser array element 100 is flip-chip mounted on the base 20.

[0064] As shown in FIG. 4, on the second surface 50, p wirings P20, P21, P22, and P23, which are p-side conductive films and rectangular in top view, and n wirings N20, N21, and N22, which are n-side conductive films and U-shaped in top view, are formed as pattern wirings. Here, the p wiring P21 is sandwiched between a straight portion N20a at one end of the n wiring N20 and a straight portion N20b at the other end. Similarly, the p wiring P22 is sandwiched between a straight portion N21a at one end of the n wiring N21 and a straight portion N21b at the other end. Similarly, the p wiring P23 is sandwiched between a straight portion N22a at one end of the n wiring N22 and a straight portion N22b at the other end. The straight line portion N22a, the p-wiring P23, the straight line portion N22b, the straight line portion N21a, the p-wiring P22, the straight line portion N21b, the straight line portion N20a, the p-wiring P21, the straight line portion N20b, and the p-wiring P20 are arranged in this order parallel to the X-axis direction.

[0065] The p-electrode and n-electrode of the semiconductor laser array element 100 are electrically connected to the pattern wiring formed on the base 20 via the wiring electrode 360 ​​and the connection layer 370 .

[0066] For example, the n-electrodes N10 and N11 are electrically connected to the straight line portion N20b and the straight line portion N20a of the n-wire N20 via the wiring electrode 360 ​​and the connection layer 370, respectively. Also, for example, the n-electrodes N12 and N13 are electrically connected to the straight line portion N21b and the straight line portion N21a of the n-wire N21 via the wiring electrode 360 ​​and the connection layer 370, respectively. Also, for example, the n-electrodes N14 and N15 are electrically connected to the straight line portion N22b and the straight line portion N22a of the n-wire N22 via the wiring electrode 360 ​​and the connection layer 370, respectively. Also, for example, the p-electrode P10 is electrically connected to the p-wire P21 via the wiring electrode 360 ​​and the connection layer 370. Also, for example, the p-electrode P11 is electrically connected to the p-wire P22 via the wiring electrode 360 ​​and the connection layer 370. For example, the p-electrode P12 is electrically connected to the p-wiring P23 via the wiring electrode 360 ​​and the connection layer 370.

[0067] Further, the central portion N20c of the n-wiring N20, the central portion N21c of the n-wiring N21, the central portion N22c of the n-wiring N22, one end P21a of the p-wiring P21, one end P22a of the p-wiring P22, and one end P23a of the p-wiring P23 are exposed in the Y-axis direction from the rear ends (in this embodiment, the ends on the Y-axis negative side) of the semiconductor laser element 120 and the semiconductor laser element 130. The first conductive film (first conductor) and the second conductive film (second conductor) are exposed in the first direction from the rear end of the semiconductor laser element 120. The second conductive film has a third portion 730 exposed from the semiconductor laser element 120 and electrically connected to the n-electrode N12, and a fourth portion 740 exposed from the semiconductor laser element 120 and electrically connected to the n-electrode N13.

[0068] Metal wires W1 to W3 are formed on the second surface 50 to electrically connect the pattern wirings. For example, the p wiring P20 and the p wiring P21 are electrically connected by a wire W1 joined to the p wiring P20 and one end P21a. Also, for example, the n wiring N20 and the p wiring P22 are electrically connected by a wire W2 joined to the center portion N20c and one end P22a. Also, for example, the n wiring N21 and the p wiring P23 are electrically connected by a wire W3 joined to the center portion N21c and one end P23a. Each of the wires W1, W2, and W3 is made of four Au wires.

[0069] The p-electrode P11 and the n-electrode N11 are electrically connected via an n-wiring N20, a wire W2, and a p-wiring P22. In the present embodiment, the n-wiring N20, the wire W2, and the p-wiring P22 are a first conductor.

[0070] Moreover, the n-electrodes N12 and N13 are electrically connected via an n-wire N21. That is, in this embodiment, the n-wire N21, which is a conductive film (second conductive film), is the second conductor. Similarly, the n-electrodes N10 and N11 are electrically connected via an n-wire N20, and the n-electrodes N14 and N15 are electrically connected via an n-wire N22.

[0071] The width (length L3 in the Y-axis direction) of the n-wiring N21 at a portion extending in the X-axis direction is, for example, 60 μm or less. Also, the length L4 (bridge wiring length) of the n-wiring N21 at a portion extending in the X-axis direction in the extension direction (i.e., the X-axis direction) is, for example, about 630 μm.

[0072] The array-type semiconductor laser device 200 includes a first metal wire (wire W2). The first metal wire (wire W2) is a metal wire that electrically connects a first portion 710 of the p wiring P22 and a second portion 720 of the n wiring N20. The first portion 710 of the p wiring P22 refers to the same region as one end P22a of the p wiring P22 described above.

[0073] Moreover, the array-type semiconductor laser device 200 has a recess 150 between the semiconductor laser element 120 and the semiconductor laser element 130. In this embodiment, the recess 150 is formed in the semiconductor laser array element 100.

[0074] The recess 150 is a groove formed between the semiconductor laser element 120 and the semiconductor laser element 130 to prevent the semiconductor laser element 120 and the semiconductor laser element 130 from being electrically connected to each other without an intervening wiring or the like. The recess 150 is a groove that reaches the barrier layer 810. For example, a part of the recess 150 is also formed in the barrier layer 810. An insulating film 340 and a protective film 350 are formed in the recess 150.

[0075] The semiconductor laser array element 100 is mounted on the base 20. The base 20 has, for example, insulating properties.

[0076] In this embodiment, the first surface 40 (lower surface) of the substrate 10 is joined to the second surface 50 (upper surface) of the base 20.

[0077] For example, when viewed from above, the length L2 in the Y-axis direction of each of the p wirings P21, P22, and P23 at the portion not overlapping with the semiconductor laser array device 100 is 500 μm or less.

[0078] The semiconductor laser array element 100 and the base 20 are connected by a connection portion 870 .

[0079] FIG. 7 is a cross-sectional view showing a connection portion 870 according to the first embodiment.

[0080] In the connection portion 870, the wiring electrode 360 ​​is composed of, for example, a metal layer 871 and a barrier metal layer 872 in this order from the upper layer side. The connection layer 370 is composed of a solder layer 873 and a solder base layer 874. The pattern wiring (for example, the n-wiring N22) has an upper surface conductive layer 875 and a base layer 876. The base layer 876 is formed on the base 20. As shown in FIG. 4, the connection layer 370 is formed in a connection region 370a indicated by a dotted line on the pattern wiring.

[0081] The metal layer 871 is made of, for example, Au, and is formed by, for example, plating.

[0082] The barrier metal layer 872 is made up of, for example, a Pt layer and a Ti layer in this order from the bottom.

[0083] The solder layer 873 is made of, for example, AuSn solder.

[0084] The solder underlayer 874 is made up of, for example, a Ti layer and a Pt layer in that order from the bottom.

[0085] The upper surface conductive layer 875 is made of, for example, a Cu layer, a Ni layer, and a Au layer in this order from the bottom up. The upper surface conductive layer 875 is formed by, for example, plating.

[0086] The base layer 876 is made up of, for example, a Ti layer, a Pt layer, and an Au layer in that order from the bottom up, and serves as a base when the upper surface conductive layer 875 is formed by plating.

[0087] The base 20 is made of an insulating ceramic material such as AlN or SiC.

[0088] Moreover, the array-type semiconductor laser device 200 further includes a first terminal and a second terminal.

[0089] The first terminal is a terminal electrically connected to the p-electrode P10. In the present embodiment, the first terminal is a p-wiring P20 that is a wiring formed on the base 20.

[0090] The second terminal is a terminal electrically connected to the n-electrode N12. In this embodiment, the second terminal is an n-wire N22 that is a wire formed on the base 20. In this embodiment, the n-electrode N12 is electrically connected to the n-wire N22 via the n-wire N21, the wire W3, the p-wire P23, and the semiconductor laser element 140.

[0091] A direct current is applied to the semiconductor laser array element 100 from an external power source (not shown) or the like via a first terminal and a second terminal.

[0092] The base 20 is placed on the heat sink 860 via a bonding layer 880 .

[0093] The heat sink 860 is made of a metal material with high thermal conductivity, such as Cu or Al.

[0094] The heat sink 860 and the base 20 are joined together by solder such as SnAgCu.

[0095] FIG. 8 is a cross-sectional view showing a bonding layer 880 according to the first embodiment.

[0096] The bonding layer 880 has, in order from the top, a base layer 881, a bottom conductive layer 882, a solder layer 883, and a top conductive layer 884.

[0097] The underlayer 881 is made up of, for example, an Au layer, a Pt layer, and a Ti layer in that order from the bottom up.

[0098] The lower surface conductive layer 882 is made of, for example, an Au layer, an Ni layer, and a Cu layer in this order from the bottom side. The lower surface conductive layer 882 is a layer formed by, for example, plating. In this case, the base layer 881 is a layer that serves as a base for the lower surface conductive layer 882.

[0099] The solder layer 883 is made of, for example, a SnAgCu based low melting point solder.

[0100] The upper surface conductive layer 884 is made of, for example, a Ni layer and an Au layer in this order from the bottom up. The upper surface conductive layer 884 is, for example, a layer formed by plating.

[0101] According to the above-mentioned configuration, the array-type semiconductor laser device 200 has no wiring (also called straddling wiring or bridge wiring) between the semiconductor laser elements 110 and between the semiconductor laser elements 110 and the base 20, which is advantageous in that the manufacturing process of the array-type semiconductor laser device 200 can be designed more easily. Also, no special process is required for the base 20, so it can be designed easily. Also, as for the assembly process when manufacturing the array-type semiconductor laser device 200, there are few points to be careful of (risks), and the configuration is highly feasible.

[0102] The flow of electricity in the array-type semiconductor laser device 200 starts with the p-wiring P20, which is the anode electrode, and goes as follows: p-wiring P20 → wire W1 → p-wiring P21 → p-electrode P10 → n-electrodes N10, N11 → n-wiring N20 → wire W2 → p-wiring P22 → p-electrode P11 → n-electrodes N12, N13 → n-wiring N21 → wire W3 → p-wiring P23 → p-electrode P12 → n-electrodes N14, N15 → n-wiring N22, which is the cathode electrode.

[0103] The cavity length of each of the semiconductor laser elements 110 (the length in the Y-axis direction, more specifically, the length L1) is, for example, 4 mm.

[0104] The plating thickness of each wiring (Cu plating) formed on the base 20 is, for example, 75 μm at maximum, and when combined with the connection layer 370 (thickness 5 μm or more), the thickness is 80 μm or more. The distance between adjacent wirings is, at minimum, 150% of the plating thickness. The metal material used for the base 20 is, for example, Cu, Au, Al, etc.

[0105] The electrical wiring (the wiring formed on the base 20 and the wires W1, W2, and W3) has a resistance value determined by the cross-sectional area and length of the electrical wiring. This resistance component becomes a heat source, and when an overcurrent flows and exceeds the melting point of the wiring material, the wire melts and breaks. As a result of investigations, the inventors of the present application found that when a current of 1.4 A was passed through a single Au wire (length: 3 mm) with a diameter of 25 μm, the wire melted. Therefore, the rated current was set to about 1 / 3 of the melting current calculated from the configuration of the electrical wiring (material, wiring length, and wiring cross-sectional area).

[0106] The electrical conductivity of the material of the electrical wiring is Am (%), the length of the electrical wiring is L (m), and the cross-sectional area of ​​the electrical wiring is S (μm 2 ), the following formula (1) is satisfied.

[0107] (Rated current)=(8.56×10 -3 ×Am×S) / (3×L) (A) Equation (1)

[0108] The electrical conductivity of the material is, for example, 138% for Cu, 84% for Al, and 1% for n-GaAs, when Au is taken as 100%.

[0109] By determining the size of the electrical wiring using the above formula (1), it is possible to prevent the electrical wiring from melting.

[0110] [Effects, etc.] As described above, the array type semiconductor laser device 200 according to the first embodiment is an array type semiconductor laser device including a semiconductor laser array element 100 in which a semiconductor laser element 120 and a semiconductor laser element 130 are formed on a substrate 10. The semiconductor laser element 120 has a one-conductivity type semiconductor layer 300 and an other-conductivity type semiconductor layer 320 from the substrate 10 side. The semiconductor laser element 130 has a one-conductivity type semiconductor layer 301 and an other-conductivity type semiconductor layer 321 from the substrate 10 side. The semiconductor laser element 120 has a waveguide 330 extending in a first direction (Y-axis direction) in the substrate 10 plane. The semiconductor laser element 130 is disposed in a second direction (X-axis direction) in the substrate 10 plane perpendicular to the Y-axis direction with respect to the semiconductor laser element 120. The semiconductor laser element 130 has a waveguide 331 extending in the Y-axis direction. On a first surface 40 opposite to the substrate 10, the semiconductor laser element 120 has a first electrode (p-electrode P10) formed on the other-conductivity-type semiconductor layer 320. On the first surface 40, the semiconductor laser element 130 has a second electrode (p-electrode P11) formed on the other-conductivity-type semiconductor layer 321. On the first surface 40, the semiconductor laser element 120 has a third electrode (n-electrode N11) formed on the one-conductivity-type semiconductor layer 300 and disposed between the p-electrode P10 and the p-electrode P11, and a fourth electrode (n-electrode N10) formed on the one-conductivity-type semiconductor layer 300 and disposed on the opposite side of the n-electrode N11 and the p-electrode P10. On the first surface 40, the semiconductor laser element 130 has a fifth electrode (n-electrode N12) formed on the one-conductivity type semiconductor layer 301 and arranged between the n-electrode N11 and the p-electrode P11, and a sixth electrode (n-electrode N13) formed on the one-conductivity type semiconductor layer 301 and arranged on the opposite side of the n-electrode N12 and the p-electrode P11. The array-type semiconductor laser device 200 has a first conductor electrically connecting the p-electrode P11 and the n-electrode N11, and a second conductor electrically connecting the n-electrode N12 and the n-electrode N13.

[0111] In this embodiment, the first conductors are the p-wiring P22, the n-wiring N20, and the wire W2, and the second conductor is the n-wiring N21.

[0112] According to this, n-electrodes are arranged on both sides of the semiconductor laser element 110. This makes it easier for current to flow to the center of the waveguides 330, 331 (more specifically, the active layers 310, 311) in a direction (X-axis direction) perpendicular to the extension direction of the waveguides 330, 331 when viewed from above. Therefore, according to the array-type semiconductor laser device 200, a plurality of semiconductor laser elements 110 are connected in series, and bias in the current flowing in the active layer is suppressed.

[0113] Furthermore, for example, at least one of the semiconductor laser element 120 and the semiconductor laser element 130 oscillates in multiple transverse modes.

[0114] According to this, for example, by widening the width of the waveguide so as to achieve transverse multimode oscillation, the output of the laser light from the array-type semiconductor laser device 200 can be increased.

[0115] For example, one conductivity type semiconductor layer 300 and one conductivity type semiconductor layer 301 include an n-type semiconductor layer, and other conductivity type semiconductor layer 320 and other conductivity type semiconductor layer 321 include a p-type semiconductor layer.

[0116] According to this, n-type semiconductors can have higher conductivity than p-type semiconductors. Current flows in the in-plane direction of the layers in one conductivity type semiconductor layer 300 and one conductivity type semiconductor layer 301. By making both one conductivity type semiconductor layer 300 and one conductivity type semiconductor layer 301 n-type semiconductors, the resistance of the layers and the resistance of the element can be reduced, making it easier to uniformly flow current in the lateral direction in active layers 310, 311.

[0117] For example, the substrate 10 has insulating properties.

[0118] This makes it possible to easily electrically separate (insulate) the semiconductor laser element 120 from the semiconductor laser element 130. In this case, a semi-insulating GaAs substrate or a semi-insulating InP substrate is used as the substrate 10, and the barrier layer 810 does not need to be formed.

[0119] For example, the array-type semiconductor laser device 200 further includes a barrier layer 810 between the substrate 10 and the one conductivity type semiconductor layer 300 and between the substrate 10 and the one conductivity type semiconductor layer 301, respectively.

[0120] This allows electrical isolation between the semiconductor laser element 120 and the semiconductor laser element 130 even if the substrate 10 has conductivity that makes it difficult to obtain insulation, such as a nitride semiconductor. Also, even if the substrate 10 is insulating, electrical isolation between the semiconductor laser element 120 and the semiconductor laser element 130 is more reliable.

[0121] Moreover, for example, the array-type semiconductor laser device 200 further has a recess 150 between the semiconductor laser element 120 and the semiconductor laser element 130 .

[0122] This allows for easy insulation between one conductivity type semiconductor layer 300 and one conductivity type semiconductor layer 301, making it possible to electrically isolate semiconductor laser element 120 and semiconductor laser element 130 at a position that does not involve electrodes or the like.

[0123] In addition, for example, the first surface 40 side of the substrate 10 is bonded to the second surface 50 of the base 20 .

[0124] This makes it easier for heat generated by the semiconductor laser element 110 to be dissipated to the base 20.

[0125] Moreover, for example, the first conductor is formed on the base 20.

[0126] According to this, since a first conductor is not arranged on the first surface 40 of the array-type semiconductor laser device 200, the arrangement of the first conductor and the second conductor on the first surface 40 of the array-type semiconductor laser device 200 is prevented from becoming complicated.

[0127] This makes it possible to easily form the first conductor on the base 20.

[0128] As described above, the first conductor is the first conductive film (p wiring P22) formed on the second surface 50.

[0129] Furthermore, for example, the p-wiring P22 is exposed from the rear end of the semiconductor laser element 120 in the Y-axis direction.

[0130] This allows the p-wiring P22 and the n-wiring N20 to be connected at the end P22a exposed from the rear end of the semiconductor laser element 120. This makes it possible to easily electrically insulate the n-electrode N11 and the p-wiring P22.

[0131] Furthermore, for example, the first conductive film (the p wiring P22 and the n wiring N20 in the case of the first embodiment) has a first portion 710 of the p wiring P22 exposed from the semiconductor laser element 120 and the semiconductor laser element 130 and electrically connected to the p-electrode P11, and a second portion 720 of the n wiring N20 exposed from the semiconductor laser element 120 and the semiconductor laser element 130 and electrically connected to the n-electrode N11. Furthermore, the array-type semiconductor laser device 200 further has a first metal wire (wire W2) electrically connecting the first portion 710 and the second portion 720.

[0132] According to this, by using the first metal wire (wire W2), the p electrode P11 and the n electrode N11 can be connected so that the first conductive film (in this embodiment, the n wiring N20 and the p wiring P22) does not come into contact with the second conductive film (in this embodiment, the n wiring N21).

[0133] Moreover, for example, the second conductor (in this embodiment, the n-wiring N21) is formed on the base 20.

[0134] According to this, the second conductor is not disposed on the first surface 40 of the array-type semiconductor laser device 200. Therefore, it is possible to prevent the arrangement of the first conductor and the second conductor on the first surface 40 of the array-type semiconductor laser device 200 from becoming complicated.

[0135] Moreover, for example, the second conductor is a second conductive film formed on the second surface 50 (for example, the n-wiring N21).

[0136] This makes it possible to easily form the second conductor on the base 20.

[0137] Furthermore, for example, the second conductive film (for example, the n-wiring N21) is exposed from the rear end of the semiconductor laser element 120 in the Y-axis direction.

[0138] According to this, the fifth electrode and the sixth electrode can be connected at the portions of the second conductive film exposed from the rear ends of the semiconductor laser element 120 and the semiconductor laser element 130, respectively, so that electrical insulation between the second electrode and the second conductor can be easily achieved.

[0139] For example, the array-type semiconductor laser device 200 further has a first terminal (for example, p-wiring P20) connected to the p-electrode P10.

[0140] This facilitates electrical connection between an external power source (not shown) and the semiconductor laser element 110, for example.

[0141] For example, the array-type semiconductor laser device 200 further has a second terminal (for example, an n-wire N22) connected to the n-electrode N12.

[0142] This facilitates electrical connection between an external power source (not shown) and the semiconductor laser element 110.

[0143] [Variations] Next, a description will be given of modified examples of the array-type semiconductor laser device according to the embodiment 1. In the modified examples described below, differences from the respective components of the array-type semiconductor laser device 200 according to the embodiment 1 will be mainly described, and descriptions of the same components may be simplified or omitted.

[0144] <Variation 1> Fig. 9 is a cross-sectional view showing a semiconductor laser array device 101 according to a first modification of the first embodiment. Fig. 10 is an enlarged view showing a region surrounded by a dashed line X in Fig. 9.

[0145] The semiconductor laser array element 101 has a recess 151 between the semiconductor laser element 120 and the semiconductor laser element 130 .

[0146] The recess 151 is a groove formed between the semiconductor laser element 120 and the semiconductor laser element 130 to prevent the semiconductor laser element 120 and the semiconductor laser element 130 from being electrically connected to each other without an intermediary of wiring or the like. The recess 151 reaches, for example, the substrate 10. In other words, for example, a part of the recess 151 is also formed in the substrate 10. In the recess 151, an insulating film 341 and a protective film 351 are formed.

[0147] The recess 151 of the semiconductor laser array element 101 has a different shape from the recess 150 of the semiconductor laser array element 100. The recess 151 is tapered so that the width in the second direction (X-axis direction) increases from the bottom (lower) of the recess 151 toward the opening 152 (upper) of the recess. The recess 151 having such a shape can be formed by wet etching a GaAs-based semiconductor or the like.

[0148] As described above, in this modification, the recess 151 reaches the substrate 10.

[0149] This can ensure more reliable electrical isolation between the semiconductor laser element 120 and the semiconductor laser element 130.

[0150] In this modification, the recess 151 is formed so that the width in the X-axis direction increases from the bottom of the recess 151 toward the opening 152 of the recess 151.

[0151] According to this, by forming the opening 152 so as to have a wider width, the insulating film 341, the protective film 351, etc. can be formed uniformly on the corners, side surfaces, and bottom surface of the opening 152 of the recess 151.

[0152] <Variation 2> FIG. 11 is a top view showing an array-type semiconductor laser device 201 according to the second modification of the first embodiment.

[0153] The array-type semiconductor laser device 201 is different from the array-type semiconductor laser device 200 in the shape of the wires.

[0154] The wires W4, W5, and W6 of the array-type semiconductor laser device 201 are not linear but curved plate-like (ribbon-like). In this way, the shape and number of the wires of the array-type semiconductor laser device 201 are not particularly limited. By making the wires W4, W5, and W6 thicker, the resistance can be further reduced.

[0155] <Variation 3> Fig. 12 is a top view showing an array-type semiconductor laser device 202 according to Modification 3 of Embodiment 1. Although not shown, the semiconductor laser array element 100 included in the array-type semiconductor laser device 202 includes, in order from the positive side of the X-axis, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, and an n-electrode N15, as shown in Fig. 3.

[0156] The array-type semiconductor laser device 202 differs from the array-type semiconductor laser device 200 in the layout of the pattern wiring formed on the base 21 (first base).

[0157] On the second surface 50 of the base 21, there are formed a p-wiring P24 having a U-shape in a top view, n-wirings N24 to N27 having a rectangular shape in a top view, and pn-wirings PN1 and PN2 having a U-shape in a top view. Here, the n-wiring N24 is sandwiched between a straight line portion P24a at one end of the p-wiring P24 and a straight line portion P24b at the other end. Similarly, the n-wiring N25 is sandwiched between a straight line portion PN1a at one end of the pn-wiring PN1 and a straight line portion PN1b at the other end. Similarly, the n-wiring N26 is sandwiched between a straight line portion PN2a at one end of the pn-wiring PN2 and a straight line portion PN2b at the other end. The n-wiring line N27, straight line portion PN2a, n-wiring line N26, straight line portion PN2b, straight line portion PN1a, n-wiring line N25, straight line portion PN1b, straight line portion P24a, n-wiring line N24, and straight line portion P24b are arranged in this order parallel to the X-axis direction.

[0158] The p-wiring P24 is an electrode film electrically connected to the p-electrode P10. The n-wiring N24 is an electrode film electrically connected to the n-electrode N10. The n-wiring N25 is an electrode film electrically connected to the n-electrode N12. The n-wiring N26 is an electrode film electrically connected to the n-electrode N14. The n-wiring N27 is an electrode film electrically connected to the n-electrode N15. The straight line portions PN1b and PN1a of the pn-wiring PN1 are electrically connected to the n-electrode N11 and the p-electrode P11, respectively. The straight line portions PN2b and PN2a of the pn-wiring PN2 are electrically connected to the n-electrode N13 and the p-electrode P12, respectively.

[0159] As described above, in this modification, the first conductor electrically connecting the p-electrode P11 of the semiconductor laser element 130 and the n-electrode N11 of the semiconductor laser element 120 is the first conductive film (pn wiring PN1) formed on the second surface 50.

[0160] Moreover, the first conductive film (first conductor) is exposed in the first direction from the rear ends of the semiconductor laser element 120 and the semiconductor laser element 130. That is, the pn wiring PN1 has portions on the rear end sides of the semiconductor laser element 120 and the semiconductor laser element 130 that do not overlap with the rear ends of the semiconductor laser element 120 and the semiconductor laser element 130 in a top view.

[0161] The first conductive film (in this modification, the pn wiring PN1) has, for example, a first portion 710 exposed from the semiconductor laser element 120 and the semiconductor laser element 130 and electrically connected to the p-electrode P11, and a second portion 720 exposed from the semiconductor laser element 120 and the semiconductor laser element 130 and electrically connected to the n-electrode N11.

[0162] The second conductive film (in this modification, the n-type wiring N25 and the pn-type wiring PN2) which is the second conductor has a third portion 730 which is exposed from the semiconductor laser element 120 and the semiconductor laser element 130 and is electrically connected to the n-electrode N12, and a fourth portion 740 which is exposed from the semiconductor laser element 120 and the semiconductor laser element 130 and is electrically connected to the n-electrode N13.

[0163] The array-type semiconductor laser device 202 has a second metal wire (wire W8) that electrically connects the third portion 730 and the fourth portion 740 together.

[0164] By setting the wire position as close as possible to the semiconductor laser element 110 and appropriately changing the wire wiring (increasing the wire cross-sectional area and shortening the wiring), the wiring resistance between the N electrodes can be reduced, and the width of the n-electrode of the semiconductor laser element 110 can be set small. As a result, the size of the semiconductor laser array element 100 can be reduced.

[0165] Furthermore, for example, the second conductive film (n-wiring N25 and pn-wiring PN2) has a third portion 730 of the n-wiring N25 exposed from the semiconductor laser elements 120 and 130 and electrically connected to the n-electrode N12, and a fourth portion 740 of the pn-wiring PN2 exposed from the semiconductor laser elements 120 and 130 and electrically connected to the n-electrode N13. Furthermore, for example, the array-type semiconductor laser device 202 further has a second metal wire (wire W8) electrically connecting the third portion 730 and the fourth portion 740.

[0166] According to this, by using the wire W8, it is possible to connect the n-electrodes N12 and N13 so that the second conductive film does not come into contact with the first conductive film.

[0167] (Embodiment 2) Next, an array-type semiconductor laser device according to embodiment 2 will be described. In the description of the array-type semiconductor laser device according to embodiment 2, differences from the array-type semiconductor laser device according to embodiment 1 will be mainly described, and the same components as those in the array-type semiconductor laser device according to embodiment 1 will be denoted by the same reference numerals, and the description thereof may be omitted.

[0168] Fig. 13 is a top view showing an array-type semiconductor laser device 203 according to embodiment 2. The semiconductor laser array element 100 included in the array-type semiconductor laser device 203 includes, in order from the positive side of the X-axis, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, and an n-electrode N15, as shown in Fig. 3.

[0169] The array-type semiconductor laser device 203 is different from the array-type semiconductor laser device 200 in the layout of the wiring pattern formed on the base 22 (first base).

[0170] On the second surface 50 of the base 22, an n-wiring N33, a p-wiring P27, an n-wiring N32, an n-wiring N31, a p-wiring P26, an n-wiring N30, an n-wiring N29, a p-wiring P25, an n-wiring N28, and a wiring A1, each of which is rectangular when viewed from above, are formed in this order and parallel to the X-axis direction.

[0171] The wiring A1 is an electrode film that functions as an anode electrode. The wiring A1 is electrically connected to the p wiring P25 via a wire W10.

[0172] The p-wiring P25 is an electrode film electrically connected to the p-electrode P10. The p-wiring P26 is an electrode film electrically connected to the p-electrode P11. The p-wiring P27 is an electrode film electrically connected to the p-electrode P12. The n-wiring N28 is an electrode film electrically connected to the n-electrode N10. The n-wiring N28 is electrically connected to the n-wiring N29 via the wire W11. The n-wiring N29 is an electrode film electrically connected to the n-electrode N11. The n-wiring N29 is electrically connected to the p-wiring P26 via the wire W12. The n-wiring N30 is an electrode film electrically connected to the n-electrode N12. The n-wiring N30 is electrically connected to the n-electrode N31 via the wire W13. The n-wiring N31 is an electrode film electrically connected to the n-electrode N13. The n-wiring N31 is electrically connected to the p-wiring P27 via the wire W14. The n-wiring N32 is an electrode film electrically connected to the n-electrode N14. The n-wiring line N32 is electrically connected to the n-wiring line N33 via a wire W15.

[0173] The n-wiring N33 is an electrode film that is electrically connected to the n-electrode N15. The n-wiring N33 functions as a cathode electrode.

[0174] In addition, the ends of the n-wiring N33, the p-wiring P27, the n-wiring N32, the n-wiring N31, the p-wiring P26, the n-wiring N30, the n-wiring N29, the p-wiring P25, and the n-wiring N28 on the negative Y-axis side are exposed in the Y-axis direction from the rear ends of the semiconductor laser elements 120 and 130, respectively (in this embodiment, the ends on the negative Y-axis side).

[0175] As described above, the n-wirings electrically connected to the n-electrodes of the semiconductor laser element 110 in the base 22 are electrically connected at the rear end side of the semiconductor laser element 110 by the wires W11, W13, and W15.

[0176] The p-wiring electrically connected to the p-electrode of the semiconductor laser element 110 is electrically connected to the n-wiring on the rear end side of the semiconductor laser element 110 by wires W10, W12, and W14.

[0177] In this embodiment, the array-type semiconductor laser device 203 includes four wires W10 to W15 each. The wires W10 to W15 are each made of, for example, Au.

[0178] As described above, the wiring that electrically connects the electrodes of the semiconductor laser array device 100 may be electrically connected by an electrode film or by a metal wire.

[0179] (Embodiment 3) Next, an array-type semiconductor laser device according to embodiment 3 will be described. In the description of the array-type semiconductor laser device according to embodiment 3, differences from the array-type semiconductor laser devices according to embodiments 1 and 2 will be mainly described, and the same components as those in the array-type semiconductor laser devices according to embodiments 1 and 2 will be denoted by the same reference numerals, and the description thereof may be omitted.

[0180] [composition] Fig. 14 is a top view showing an array-type semiconductor laser device 204 according to the third embodiment. Fig. 15 is a top view showing a submount 223 according to the third embodiment. Fig. 16 is a bottom view showing a semiconductor laser array element 102 according to the third embodiment. Fig. 17 is a cross-sectional view showing the array-type semiconductor laser device 204 according to the third embodiment, taken along line XVII-XVII in Fig. 14. Fig. 18 is a cross-sectional view showing the array-type semiconductor laser device 204 according to the third embodiment, taken along line XVIII-XVIII in Fig. 14.

[0181] The array-type semiconductor laser device 204 includes a substrate 10, a semiconductor laser array element 102, and a base 23 (first base).

[0182] The semiconductor laser array element 102 has a plurality of semiconductor laser elements 112. In the present embodiment, the semiconductor laser array element 102 has a semiconductor laser element 122 (first semiconductor laser element), a semiconductor laser element 132 (second semiconductor laser element), and a semiconductor laser element 142 (third semiconductor laser element).

[0183] When the semiconductor laser element 122, the semiconductor laser element 132, and the semiconductor laser element 142 are described in common, they are also simply referred to as the semiconductor laser element 112.

[0184] Moreover, the array-type semiconductor laser device 204 does not include wiring.

[0185] 15, the submount 223 is formed by forming pattern wiring on a base 23. The semiconductor laser array element 102 is arranged (mounted) on the base 23. On the second surface 50 of the base 23, a J-shaped p wiring P28, an N-shaped pn wiring PN3, a pn wiring PN4, and a J-shaped n wiring N34 are formed as pattern wirings.

[0186] The straight line portion P28a, which is the short end of the p-wiring P28, is electrically connected to the p-electrode P10. The pn-wiring PN3 has a straight line portion PN3e at the end electrically connected to the n-electrode N10, a straight line portion PN3c at the center electrically connected to the n-electrode N11, and a straight line portion PN3a at the end electrically connected to the p-electrode P11. The pn-wiring PN4 ​​has a straight line portion PN4e at the end electrically connected to the n-electrode N12, a straight line portion PN4c at the center electrically connected to the n-electrode N13, and a straight line portion PN4a at the end electrically connected to the p-electrode P12. The n-wiring N34 has a straight line portion N34c at the short end electrically connected to the n-electrode N14, and a straight line portion N34a at the long end electrically connected to the n-electrode N15. The straight line portion P28a is sandwiched between the straight line portion PN3c and the straight line portion PN3e. The straight line portion PN3a is sandwiched between the straight line portion PN4c and the straight line portion PN4e. Moreover, the straight line portion PN4a is sandwiched between the straight line portion N34a and the straight line portion N34c. Moreover, the straight line portion PN3e is sandwiched between the straight line portion P28a and the straight line portion P28c. Moreover, the straight line portion PN4e is sandwiched between the straight line portion PN3a and the straight line portion PN3c. Moreover, the straight line portion N34c is sandwiched between the straight line portion PN4a and the straight line portion PN4c. The straight line portion N34a, the straight line portion PN4a, the straight line portion N34c, the straight line portion PN4c, the straight line portion PN3a, the straight line portion PN4e, the straight line portion PN3c, the straight line portion P28a, the straight line portion PN3e, and the straight line portion P28c are arranged in this order parallel to the X-axis direction.

[0187] 16, the semiconductor laser array element 102 includes, in order from the positive side of the X-axis, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, and an n-electrode N15. The semiconductor laser element 122 includes an n-electrode N10, a p-electrode P10, and an n-electrode N11. The semiconductor laser element 132 includes an n-electrode N12, a p-electrode P11, and an n-electrode N13. The semiconductor laser element 142 includes an n-electrode N14, a p-electrode P12, and an n-electrode N15. In addition, when viewed from the bottom surface of the semiconductor laser array element 102, n electrode N15, p electrode P12, n electrode N14, n electrode N13, p electrode P11, n electrode N12, n electrode N11, p electrode P10, and n electrode N10 are formed in a rectangular shape approximately the same as that of each wiring electrode 360, and are covered by each wiring electrode 360.

[0188] Here, the semiconductor laser array element 102 has protective films 840 , 841 , and 842 in addition to the configuration of the semiconductor laser array element 100 .

[0189] The protective films 840, 841, and 842 are insulating films having electrical insulation properties.

[0190] The protective film 842 is formed on a part of the wiring electrode 360 ​​and the n-electrode N10. Specifically, the protective film 842 is provided at a position overlapping with a connection portion P28b (a portion connecting the straight portion P28a and the straight portion P28c) of the p-wiring P28 in a top view on the emission side end portion (the end portion on the Y-axis positive direction side) of the wiring electrode 360 ​​and the n-electrode N10 of the semiconductor laser element 122.

[0191] As a result, the p-wiring line P28 is electrically insulated from the wiring electrode 360 ​​and the n-electrode N10, and the pn-wiring line PN3 is electrically connected to the wiring electrode 360 ​​and the n-electrode N10.

[0192] Moreover, the protective film 841 is formed on a part of the wiring electrode 360 ​​and the n-electrode N12. Specifically, the protective film 841 is provided at a position overlapping with a connection portion PN3b (portion connecting the straight portion PN3a and the straight portion PN3c) of the pn wiring PN3 in a top view on the emission side end portion (end portion on the Y-axis positive direction side) of the wiring electrode 360 ​​and the n-electrode N12 of the semiconductor laser element 132.

[0193] As a result, the pn wiring PN3 is electrically insulated from the wiring electrode 360 ​​and the n-electrode N12, and the pn wiring PN4 ​​is electrically connected to the wiring electrode 360 ​​and the n-electrode N12.

[0194] Moreover, the protective film 840 is formed on a part of the wiring electrode 360 ​​and the n-electrode N14. Specifically, the protective film 840 is provided at a position where the wiring electrode 360 ​​of the semiconductor laser element 142 and the emission side end portion (end portion on the Y-axis positive side) of the n-electrode N14 overlap with a connection portion PN4b (portion connecting the straight line portion PN4a and the straight line portion PN4c) with the pn wiring PN4 ​​in a top view at the emission side end portion (end portion on the Y-axis positive side) of the n-electrode N14.

[0195] In addition, a connection portion PN3d of the pn wiring PN3 connecting the straight line portions PN3c and PN3e, a connection portion PN4d of the pn wiring PN4 ​​connecting the straight line portions PN4c and PN4e, and a connection portion N34b of the n wiring N34 connecting the straight line portions N34a and N34c are exposed from the rear ends of the semiconductor laser elements 120 and 130 in the Y-axis direction (in this embodiment, the ends on the negative side of the Y-axis).

[0196] As a result, the pn wiring PN4 ​​is electrically insulated from the wiring electrode 360 ​​and the n-electrode N14, and the n wiring N34 and the n-electrode N14 are electrically connected.

[0197] Moreover, the portion of the lower surface of the semiconductor laser array element 102 where the wiring electrodes 360 are not exposed is covered with a protective film 350. The protective films 840, 841, and 842 are formed integrally with the protective film 350 and made of the same material.

[0198] 15, a connection layer 370 is formed in a connection region 370a indicated by a dotted line on the pattern wiring. The connection layers 370 formed in the connection portion P28b, the connection portion PN3b, and the connection portion PN4b are bonded to the protective film 842, the protective film 841, and the protective film 840, respectively.

[0199] According to the above configuration, power can be supplied to an appropriate position of the semiconductor laser element 112 via the pattern wiring formed on the upper surface (second surface 50) of the base 23 without using metal lines such as wires.

[0200] [Variations] Next, a description will be given of modified examples of the array-type semiconductor laser device according to the embodiment 3. Note that in the modified examples described below, differences from the respective components of the array-type semiconductor laser device according to the embodiment 3 will be mainly described, and descriptions of the same components may be simplified or omitted.

[0201] The layout of the pattern wiring formed on the second surface 50 of the base 21 of the array-type semiconductor laser device 205 is similar to that of the base 21 of the above-mentioned array-type semiconductor laser device 202. In the array-type semiconductor laser device 205, the pattern wiring is further electrically connected by a connection film.

[0202] Fig. 19 is a top view showing an array-type semiconductor laser device 205 according to Modification 1 of the third embodiment. Fig. 20 is a cross-sectional view showing the array-type semiconductor laser device 205 according to Modification 1 of the third embodiment, taken along the line XX-XX in Fig. 19. Fig. 21 is a cross-sectional view showing insulating films 610-612 and connecting films 600-602 according to Modification 1 of the third embodiment, taken along the line XXI-XXI in Fig. 19. Fig. 22 is a cross-sectional view showing the insulating film 610 and connecting film 600 according to Modification 1 of the third embodiment, taken along the line XXII-XXII in Fig. 19.

[0203] The array-type semiconductor laser device 205 includes a substrate 10 , a semiconductor laser array element 100 , and a base 21 .

[0204] As shown in FIG. 3, the semiconductor laser array element 100 provided in the array-type semiconductor laser device 205 includes, in order from the positive side of the X-axis, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0205] 12, on the second surface 50 of the base 21, p-wiring P24, n-wirings N24 to N27, and pn-wirings PN1 and PN2 are formed.

[0206] Film-like insulating films 610-612 are formed on the upper surface of the pattern wiring formed on the second surface 50 of the base 21. In addition, film-like connecting films 600-602 having electrical conductivity are formed on the upper surfaces of the insulating films 610-612.

[0207] For example, the connection film 600 electrically connects the n-wiring N24 and the pn-wiring PN1. The connection film 600 is also disposed above the p-wiring P24 via an insulating film 610. As a result, the connection film 600 is electrically insulated from the p-wiring P24.

[0208] Also, for example, the connection film 601 electrically connects the n-line N25 and the pn-line PN2. Also, the connection film 601 is disposed above the pn-line PN1 via the insulating film 611. As a result, the connection film 601 is electrically insulated from the pn-line PN1.

[0209] For example, the connection film 602 electrically connects the n-wiring N26 and the n-wiring N27. The connection film 602 is disposed above the p-n wiring PN2 via the insulating film 612. This allows the connection film 602 to be electrically insulated from the p-n wiring PN2.

[0210] According to this modified example, power can be supplied to the semiconductor laser array element 100 via a conductive film-like connecting film formed on the second surface 50 of the base 21, without using metal wires such as the wires W7 to W9 as in the array-type semiconductor laser device 202.

[0211] (Embodiment 4) Next, an array-type semiconductor laser device according to embodiment 4 will be described. In the description of the array-type semiconductor laser device according to embodiment 4, differences from the array-type semiconductor laser devices according to embodiments 1 to 3 will be mainly described, and the same components as those in the array-type semiconductor laser devices according to embodiments 1 to 3 will be denoted by the same reference numerals, and descriptions thereof may be omitted.

[0212] Furthermore, the semiconductor laser array element 100 in embodiment 4 and each of the variations of embodiment 4 includes, in order from the positive X-axis direction, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, and an n-electrode N15, as shown in FIG.

[0213] [composition] Fig. 23 is a top view showing an array-type semiconductor laser device 206 according to the fourth embodiment. Fig. 24 is a cross-sectional view showing the array-type semiconductor laser device 206 according to the fourth embodiment, taken along the line XXIV-XXIV in Fig. 23. Fig. 25 is a cross-sectional view showing the array-type semiconductor laser device 206 according to the fourth embodiment, taken along the line XXV-XXV in Fig. 23. Fig. 26 is a top view showing a submount 224 according to the fourth embodiment. Fig. 27 is a bottom view showing the submount 224 according to the fourth embodiment.

[0214] The array-type semiconductor laser device 206 includes a substrate 10, a semiconductor laser array element 100, and a submount 224 (first base). The submount 224 is a base 24 on which a wiring pattern and vias are formed.

[0215] The semiconductor laser array device 100 is mounted on the base 24. On the second surface 50 of the base 24, a wiring pattern (wires A1, p-wires P25 to P27, and n-wires N28 to N33) is formed in the same layout as the base 22.

[0216] The base 24 also includes a plurality of vias 500 .

[0217] In the following description, when a common explanation is given for each of the vias provided in the array-type semiconductor laser device, they are also simply referred to as vias 500.

[0218] The via 500 is a conductive electrode that penetrates the base 24 in a direction perpendicular to the second surface 50. Specifically, the via 500 electrically connects the pattern wiring formed on the second surface 50 of the base 24 to the pattern wiring formed on the third surface 60, which is the lower surface of the base 24 and is opposite to the second surface 50. In other words, the via 500 penetrates from the second surface 50 to the third surface 60.

[0219] A plurality of vias 501 to 512 are formed and aligned in the Y-axis direction. For example, a plurality of vias 502 and vias 509 are formed and aligned alternately in the Y-axis direction. Also, for example, a plurality of vias 504 and vias 511 are formed and aligned alternately in the Y-axis direction.

[0220] The vias 500 are electrically connected to one another by a conductive film 620. When a common description is given to each of the conductive films 621 to 626, they are also simply referred to as the conductive film 620.

[0221] The conductive film 620 is a film having conductivity formed on the third surface 60 of the base 24. A plurality of conductive films 620 are formed on the third surface 60 of the base 24. Specifically, conductive films 621 to 626 are formed on the third surface 60 of the base 24.

[0222] For example, the conductive film 621 electrically connects the via 501 and the via 502. That is, the conductive film 621 electrically connects the n-electrode N10 and the n-electrode N11 of the semiconductor laser element 120. Also, for example, the conductive film 622 electrically connects the via 503 and the via 504. That is, the conductive film 622 electrically connects the n-electrode N12 and the n-electrode N13 of the semiconductor laser element 130. Also, for example, the conductive film 623 electrically connects the via 505 and the via 506. That is, the conductive film 623 electrically connects the n-electrode N14 and the n-electrode N15 of the semiconductor laser element 140. Also, for example, the conductive film 624 electrically connects the via 507 and the via 508. That is, the conductive film 624 electrically connects the p-electrode P10 of the semiconductor laser element 120 and the wiring A1. Also, for example, the conductive film 625 electrically connects the via 509 and the via 510. That is, the conductive film 625 electrically connects the p-electrode P11 of the semiconductor laser element 130 and the n-electrode N11 of the semiconductor laser element 120. Also, for example, the conductive film 626 electrically connects the via 511 and the via 512. That is, the conductive film 626 electrically connects the p-electrode P12 of the semiconductor laser element 140 and the n-electrode N13 of the semiconductor laser element 130.

[0223] Moreover, the conductive films 621 to 626 extend in the X direction.

[0224] For example, the plurality of conductive films 624 and the plurality of conductive films 621 are alternately arranged in the Y-axis direction. Also, for example, the plurality of conductive films 621 and the plurality of conductive films 625 are alternately arranged in the Y-axis direction. Also, for example, the plurality of conductive films 625 and the plurality of conductive films 622 are alternately arranged in the Y-axis direction. Also, for example, the plurality of conductive films 622 and the plurality of conductive films 626 are alternately arranged in the Y-axis direction. Also, for example, the plurality of conductive films 626 and the plurality of conductive films 623 are alternately arranged in the Y-axis direction.

[0225] Moreover, the conductive film 623, the conductive film 622, and the conductive film 621 are arranged in this order on a straight line in the X-axis direction. Moreover, the conductive film 626, the conductive film 625, and the conductive film 624 are arranged in this order on a straight line in the X-axis direction.

[0226] FIG. 28 is an enlarged view of the area enclosed by the dashed line XXVIII in FIG.

[0227] On the upper surface of the via 500, the connection layer 370 is composed of a solder layer 891 and a solder base layer 892 in that order from the top.

[0228] Moreover, the pattern wiring (for example, the n-type wiring N29) is composed of an upper surface conductive layer 893 and a base layer 894.

[0229] A via underlayer 896 and a metal plug 897 are formed in the through hole in the base 24 near the via 500. On the lower surface of the via 500, the conductive film 620 is composed of an underlayer 898 and a lower surface conductive layer 899.

[0230] The solder layer 891 is made up of, for example, an AuSn solder layer and an Au layer in that order from the bottom.

[0231] The solder underlayer 892 is made up of, for example, a Ti layer and a Pt layer in that order from the bottom.

[0232] The upper surface conductive layer 893 is made of, for example, a Cu layer, a Ni layer, and a Pt layer in this order from the bottom up. The upper surface conductive layer 893 is a layer formed by plating.

[0233] The base layer 894 is a layer that serves as a base for forming the upper surface conductive layer 893 by plating, and is made up of, for example, a Ti layer, a Pt layer, and an Au layer in this order from the bottom up.

[0234] The base 24 is an insulating substrate made of, for example, AlN, SiC, or the like.

[0235] The via underlayer 896 is made up of, for example, a Ti layer, a Pt layer, and an Au layer, in that order from the sidewall side (the X-axis positive direction side) of the via 500.

[0236] The metal plug 897 is made of, for example, Cu formed by plating.

[0237] The base layer 898 is, for example, a layer that serves as a base for forming the metal plug 897 by plating, and is made up of, in order from the bottom, an Au layer, a Pt layer, and a Ti layer.

[0238] The lower conductive layer 899 is made up of, for example, an Au layer, a Ni layer, and a Cu layer in that order from the bottom.

[0239] The base 24 is placed on the heat sink 860 via the conductive film 620 and the bonding layer 880a.

[0240] FIG. 29 is an enlarged view showing the area surrounded by dashed line XXIX in FIG.

[0241] The bonding layer 880a has, in order from the top, a base layer 898, a bottom conductive layer 899, a solder layer 902, a top metal layer 903, and an insulating film 904.

[0242] The base layer 898 is made up of, for example, an Au layer, a Pt layer, and a Ti layer in that order from the bottom, and serves as a base when the lower surface conductive layer 899 is formed by plating.

[0243] The lower surface conductive layer 899 is made of, for example, an Au layer, an Ni layer, and a Cu layer in this order from the bottom side. The lower surface conductive layer 899 is a layer formed by plating.

[0244] The solder layer 902 is made of, for example, a SnAgCu based low melting point solder material.

[0245] The upper metal layer 903 is made up of, for example, a Ti layer, a Pt layer, and an Au layer in this order from the bottom up.

[0246] The insulating film 904 is made of a ceramic material, such as AlN, that has electrical insulation properties and high thermal conductivity.

[0247] [Effects, etc.] As described above, in the array-type semiconductor laser device 206 according to the fourth embodiment, the base 24 has the third surface 60 located on the opposite side to the second surface 50, a first through hole (through hole in which the via 510 is formed) penetrating from the second surface 50 to the third surface 60, and a second through hole (through hole in which the via 509 is formed) penetrating from the second surface 50 to the third surface 60. The first conductor is made of a third conductor (via 510), a fourth conductor (via 509), and a third conductive film (conductive film 625). The third conductive film (conductive film 625) is formed on the third surface 60. The third conductor (via 510) is formed in the first through hole, and electrically connects the p-electrode P11 of the semiconductor laser element 130 to the third conductive film (conductive film 625). The fourth conductor (via 509) is formed in the second through hole, and electrically connects the n-electrode N11 of the semiconductor laser device 120 and the third conductive film (conductive film 625).

[0248] According to this, the length of the base 24 in the Y direction need only be approximately the resonator length of the semiconductor laser array element 100, and the area of ​​the base 24 (the area of ​​the second surface 50) can be made smaller than when the p-electrode P11 of the semiconductor laser element 130 and the n-electrode N11 of the semiconductor laser element 130 are connected to each other at the portions of the first conductive film exposed from the rear ends of the semiconductor laser element 120 and the semiconductor laser element 130.

[0249] Also, for example, a plurality of third conductors are formed in the Y-axis direction, and a plurality of fourth conductors are formed in the Y-axis direction.

[0250] This allows current to flow uniformly between the p-electrode P11 and the n-electrode N11 in the first direction. For example, when there is one first conductor, a problem occurs in which current flows intensively between the p-electrode P11 and the n-electrode N11 near the first conductor. However, this configuration prevents the problem of current flowing intensively between the p-electrode P11 and the n-electrode N11 near the first conductor, and allows current to flow uniformly between the p-electrode P11 and the n-electrode N11 in the first direction.

[0251] Furthermore, the third conductor (via 510) and the fourth conductor (via 509) are both formed in multiple numbers in the Y direction, and the total cross-sectional area of ​​each of the third conductor and the fourth conductor is increased, thereby making it possible to set a larger rated current value.

[0252] This makes it possible to reduce the areas of the p-electrode P11 and the n-electrode N11 of the semiconductor laser array element 100, and therefore the areas of the semiconductor laser array element 100 and the base 24 can be set small.

[0253] Also, for example, the base 24 has a third surface 60 located on the opposite side to the second surface 50, a fifth through hole (through hole in which the via 503 is formed) penetrating from the second surface 50 to the third surface 60, and a sixth through hole (through hole in which the via 504 is formed) penetrating from the second surface 50 to the third surface 60. The second conductor is composed of a sixth conductor (via 503), a seventh conductor (via 504), and a fourth conductive film (conductive film 622). The fourth conductive film (conductive film 622) is formed on the third surface 60. The sixth conductor (via 503) is formed in the fifth through hole, and electrically connects the n-electrode N12 and the fourth conductive film (conductive film 622). The seventh conductor (via 504) is formed in the sixth through hole, and electrically connects the n-electrode N13 and the fourth conductive film (conductive film 622).

[0254] According to this, the length of the base 24 in the Y direction need only be approximately the resonator length of the semiconductor laser array element 100, and the area of ​​the base 24 can be made smaller than when the n-electrodes N12 and N13 are connected by the wiring portions exposed from the rear ends of the semiconductor laser elements 120 and 130.

[0255] Also, for example, a plurality of sixth conductors are formed in the Y-axis direction, and a plurality of seventh conductors are formed in the Y-axis direction.

[0256] This allows current to flow uniformly in the first direction to the n-electrodes N12 and N13. For example, when there is one second conductor, a problem occurs in which current flows intensively to the n-electrodes N12 and N13 near the second conductor. However, this configuration prevents the problem of current flowing intensively to the n-electrodes N12 and N13 near the second conductor, and allows current to flow uniformly in the first direction to the n-electrodes N12 and N13.

[0257] Furthermore, the sixth conductor (via 503) and the seventh conductor (via 504) are each formed in multiples lined up in the Y direction, and the total cross-sectional area of ​​each of the sixth conductor and the seventh conductor (e.g., the area of ​​the cross section in the XY plane) is increased, thereby making it possible to set a larger rated current value.

[0258] This makes it possible to reduce the area of ​​the n-electrodes N12 and N13 of the semiconductor laser array element 100, and the areas of the semiconductor laser array element 100 and the base 24 can be set small.

[0259] Also, for example, as described above, the base 24 has a third surface 60 located on the opposite side to the second surface 50, a first through hole (through hole in which the via 510 is formed) penetrating from the second surface 50 to the third surface 60, and a second through hole (through hole in which the via 509 is formed) penetrating from the second surface 50 to the third surface 60, the first conductor is made of a third conductor (via 510), a fourth conductor (via 509) and a third conductive film (conductive film 625), the third conductive film (conductive film 625) is formed on the third surface 60, the third conductor (via 510) is formed in the first through hole and electrically connects the p-electrode P11 and the third conductive film (conductive film 625), the fourth conductor (via 509) is formed in the second through hole and electrically connects the n-electrode N11 and the third conductive film ( The base 24 further has a fifth through hole (a through hole in which a via 503 is formed) penetrating from the second surface 50 to the third surface 60, and a sixth through hole (a through hole in which a via 504 is formed) penetrating from the second surface 50 to the third surface 60, the second conductor is composed of a sixth conductor (via 503), a seventh conductor (via 504), and a fourth conductive film (conductive film 622), the fourth conductive film (conductive film 622) is formed on the third surface 60, the sixth conductor (via 503) is formed in the fifth through hole and electrically connects the n-electrode N12 and the fourth conductive film (conductive film 622), and the seventh conductor (via 504) is formed in the sixth through hole and electrically connects the n-electrode N13 and the fourth conductive film (conductive film 622).

[0260] According to this, the length in the Y direction of the base 24 need only be approximately the resonator length of the semiconductor laser array element 100, and the area of ​​the base 24 can be made smaller than when the p-electrode P11 and the n-electrode N11 are connected and the n-electrode N12 and the n-electrode N13 are connected at the wiring portions exposed from the rear ends of the semiconductor laser element 120 and the semiconductor laser element 130.

[0261] Also, for example, as described above, a plurality of third conductors are formed in the Y-axis direction, a plurality of fourth conductors are formed in the Y-axis direction, a plurality of sixth conductors are formed in the Y-axis direction, a plurality of seventh conductors are formed in the Y-axis direction, a plurality of third conductive films (conductive films 625) are formed in the Y-axis direction, and a plurality of fourth conductive films (conductive films 622) are formed in the Y-axis direction. Here, for example, the third conductive films (conductive films 625) and the fourth conductive films (conductive films 622) are alternately formed in the Y-axis direction.

[0262] According to this, a current can be made to flow uniformly in the first direction to the p-electrode P11 and the n-electrode N11. Furthermore, a current can be made to flow uniformly in the first direction to the n-electrode N12 and the n-electrode N13. For example, when there is one first conductor, a problem occurs in which the current flows in a concentrated manner to the p-electrode P11 and the n-electrode N11 near the first conductor. Furthermore, when there is one second conductor, a problem occurs in which the current flows in a concentrated manner to the n-electrode N12 and the n-electrode N13 near the second conductor. However, according to this configuration, it is possible to suppress the occurrence of these problems and make a current flow uniformly in the first direction to each of the p-electrode P11, the n-electrode N11, the n-electrode N12, and the n-electrode N13.

[0263] Furthermore, the third conductor, fourth conductor, sixth conductor, and seventh conductor are each formed in multiples lined up in the Y direction, and the total cross-sectional area of ​​each of the third conductor, fourth conductor, sixth conductor, and seventh conductor (e.g., the area of ​​the cross section in the XY plane) is increased, thereby allowing the rated current value to be set higher.

[0264] This makes it possible to reduce the electrode area of ​​each of the p-electrode P11, n-electrode N11, n-electrode N12, and n-electrode N13 of the semiconductor laser array element 100, and allows the areas of the semiconductor laser array element 100 and the base 24 to be set small.

[0265] [Variations] Next, a description will be given of modified examples of the array-type semiconductor laser device according to the fourth embodiment. Note that in the modified examples described below, differences from the respective components of the array-type semiconductor laser device according to the fourth embodiment will be mainly described, and descriptions of the same components may be simplified or omitted.

[0266] <Variation 1> Fig. 30 and Fig. 31 are cross-sectional views showing an array-type semiconductor laser device 207 according to Modification 1 of the fourth embodiment. Specifically, Fig. 30 is a cross-sectional view including a second conductor of the array-type semiconductor laser device 207 according to Modification 1 of the fourth embodiment. Also, Fig. 31 is a cross-sectional view including a first conductor of the array-type semiconductor laser device according to Modification 1 of the fourth embodiment. Note that Fig. 30 is a view showing a cross section corresponding to Fig. 24, and Fig. 31 is a view showing a cross section corresponding to Fig. 25.

[0267] The array-type semiconductor laser device 207 further includes a base 30 (second base) and a bonding layer 880b in addition to the configuration of the array-type semiconductor laser device 206. The base 30 is an insulating substrate made of, for example, AlN, SiC, or the like.

[0268] The base 24 (first base) is placed on the base 30 via a bonding layer 880a. The base 30 is placed on the heat sink 860 via a bonding layer 880b.

[0269] The base 30 has a fifth surface 80 to which the base 24 is connected. In other words, the third surface 60 of the base 24 is joined to the fifth surface 80 of the base 30.

[0270] Moreover, a metal film 400 (first metal film) is formed on the fifth surface 80 so as to face a conductive film 625 (third conductive film). Moreover, a metal film 401 (second metal film) is formed on the fifth surface 80 so as to face a conductive film 622 (fourth conductive film).

[0271] The metal films 400 and 401 are, for example, a part of a bonding layer 880a. Note that, as shown in Fig. 30 and Fig. 31, the bonding layer 880a does not necessarily have to include the insulating film 904 shown in Fig. 29, for example.

[0272] As described above, for example, the third surface 60 is joined to the fifth surface 80 of the base 30. In this case, for example, on the fifth surface 80, a first metal film (metal film 400) is formed facing the third conductive film (conductive film 625), and a second metal film (metal film 401) is formed facing the fourth conductive film (conductive film 622).

[0273] According to this, while electrically insulating the conductive film 625 from the conductive film 622, heat generated in the semiconductor laser array element 100 can be efficiently dissipated from the base 24 to the base 30 via the conductive film 625, the conductive film 622, the metal film 400 and the metal film 401.

[0274] <Variation 2> Fig. 32 and Fig. 33 are cross-sectional views showing an array-type semiconductor laser device 208 according to Modification 2 of the fourth embodiment. Specifically, Fig. 32 is a cross-sectional view including a second conductor of the array-type semiconductor laser device 208 according to Modification 2 of the fourth embodiment. Fig. 33 is a cross-sectional view including a first conductor of the array-type semiconductor laser device 208 according to Modification 2 of the fourth embodiment. Fig. 32 is a view showing a cross section corresponding to Fig. 24, and Fig. 33 is a view showing a cross section corresponding to Fig. 25.

[0275] In the array-type semiconductor laser device 208, conductive conductive films 627-632 for electrically connecting a plurality of vias 500 are formed inside the base 25 (first base). Specifically, the array-type semiconductor laser device 208 includes vias 513-524 that do not completely penetrate from the second surface 50 to the third surface 60 of the base 25, and the conductive films 627-632 electrically connect a part of the pattern wiring formed on the second surface 50 of the base 25 through the inside of the base 25. The conductive films 627-632 extend inside the base 25 in the X direction.

[0276] For example, the conductive film 627 electrically connects the via 513 and the via 514. Also, for example, the conductive film 628 electrically connects the via 515 and the via 516. Also, for example, the conductive film 629 electrically connects the via 517 and the via 518. Also, for example, the conductive film 630 electrically connects the via 519 and the via 520. Also, for example, the conductive film 631 electrically connects the via 521 and the via 522. Also, for example, the conductive film 632 electrically connects the via 523 and the via 524.

[0277] According to these, for example, the n-electrode N11 and the p-electrode P11 are electrically connected via the vias 521 and 522 and the conductive film 631. Also, for example, the n-electrode N12 and the n-electrode n13 are electrically connected via the vias 515 and 516 and the conductive film 628.

[0278] Furthermore, for example, in the array-type semiconductor laser device 208, by using an insulating ceramic material such as SiC or AlN for the base 25, the conductive films 627 to 632 can be insulated.

[0279] Moreover, the base 25 is placed on the heat sink 860 via a bonding layer 880 .

[0280] As described above, for example, the base 25 has a fifth conductor (conductive film 631) located inside the base 25, a third through hole (through hole in which the via 522 is formed) penetrating from the second surface 50 to the fifth conductor (conductive film 631), and a fourth through hole (through hole in which the via 521 is formed) penetrating from the second surface 50 to the fifth conductor. In this case, for example, the first conductor is made up of the third conductor (via 522), the fourth conductor (via 521), and the fifth conductor (conductive film 631). Also, in this case, for example, the third conductor (via 522) is formed in the third through hole and electrically connects the p-electrode P11 and the fifth conductor (conductive film 631). Also, in this case, for example, the fourth conductor (via 521) is formed in the fourth through hole and electrically connects the n-electrode N11 and the fifth conductor (conductive film 631).

[0281] According to this, the length of the base 25 in the Y direction need only be approximately the resonator length of the semiconductor laser array element 100, and the area of ​​the base 25 can be made smaller than when the p-electrode P11 and the n-electrode N11 are connected at the portions of the pattern wiring exposed from the rear ends of the semiconductor laser elements 120 and 130.

[0282] Also, for example, the base 25 has an eighth conductor (conductive film 628) located inside the base 25, a seventh through hole (through hole in which the via 515 is formed) that penetrates from the second surface 50 to the eighth conductor (conductive film 628), and an eighth through hole (through hole in which the via 516 is formed) that penetrates from the second surface 50 to the eighth conductor (conductive film 628). In this case, for example, the second conductor is composed of a ninth conductor (via 515), a tenth conductor (via 516), and an eighth conductor (conductive film 628). The ninth conductor (via 515) is formed in the seventh through hole and electrically connects the n-electrode N12 and the eighth conductor (conductive film 628). Also, in this case, for example, the tenth conductor (via 516) is formed in the second through hole and electrically connects the n-electrode N13 and the eighth conductor (conductive film 628).

[0283] According to this, the length of the base 25 in the Y direction need only be approximately the resonator length of the semiconductor laser array element 100, and the area of ​​the base 25 can be made smaller than when the n-electrodes N12 and N13 are connected by the wiring pattern portions exposed from the rear ends of the semiconductor laser elements 120 and 130.

[0284] <Variation 3> Fig. 34 is a top view showing an array-type semiconductor laser device 209 according to the third modification of the fourth embodiment. Fig. 35 is a cross-sectional view showing the array-type semiconductor laser device 209 according to the third modification of the fourth embodiment, taken along the line XXXV-XXXV in Fig. 34. Fig. 36 is a top view showing a submount 226 according to the third modification of the fourth embodiment. Fig. 37 is a bottom view showing a submount 226 according to the third modification of the fourth embodiment. The submount 226 is formed by forming a wiring pattern and vias on a base 26.

[0285] The wiring pattern formed on the upper surface of the base 26 (first base) has the same layout as the base 20 shown in Fig. 4. Specifically, the base 26 has conductive pattern wiring (p wirings P20, P21, P22, P23 and n wirings N20, N21, N22) formed thereon.

[0286] Furthermore, a plurality of vias 500 are formed in the base 26, penetrating from the second surface 50 to the third surface 60. Specifically, the base 26 is formed with vias 525-530, penetrating from the second surface 50 to the third surface 60. The base 26 has a plurality of vias 525-530 formed side by side in the Y-axis direction.

[0287] Moreover, on the third surface 60 of the base 26, conductive films 633 to 635 having electrical conductivity are formed.

[0288] For example, the conductive film 633 electrically connects the vias 525 and 526. Furthermore, for example, the conductive film 634 electrically connects the vias 527 and 528. Furthermore, for example, the conductive film 635 electrically connects the vias 529 and 530. The conductive films 635, 634, and 633 each have a rectangular shape in a top view, and are formed side by side in this order in the X direction.

[0289] According to these, for example, the n-electrode N11 and the p-electrode P11 are electrically connected through the vias 527 and 528 and the conductive film 634. Furthermore, for example, the n-electrode N12 and the n-electrode n13 are electrically connected through the n-wiring N21.

[0290] In addition, the central portion N20c of the n wiring N20, the central portion N21c of the n wiring N21, and the central portion N22c of the n wiring N22 are exposed in the Y-axis direction from the rear ends (in this embodiment, the ends on the negative side of the Y-axis) of the semiconductor laser element 110, the semiconductor laser element 120, and the semiconductor laser element 130, respectively.

[0291] <Modification 4> Fig. 38 is a top view showing an array-type semiconductor laser device 210 according to a fourth modification of the fourth embodiment. Fig. 39 is a cross-sectional view showing the array-type semiconductor laser device 210 according to the fourth modification of the fourth embodiment, taken along the line XXXIX-XXXIX in Fig. 38. Fig. 40 is a top view showing a submount 227 according to the fourth modification of the fourth embodiment. The submount 227 has a wiring pattern and vias formed on a base 27.

[0292] The wiring pattern formed on the base 27 (first base) has the same layout as that of the base 21. Specifically, on the base 27, conductive pattern wiring (p wiring P24, n wirings N24 to N27, and pn wirings PN1 and PN2) is formed.

[0293] Furthermore, the base 27 has a plurality of vias 500 formed therein, penetrating from the second surface 50 to the third surface 60. Specifically, the base 27 has vias 531-535 formed therein, penetrating from the second surface 50 to the third surface 60. The base 27 has a plurality of vias 531-536 formed therein, each aligned in the Y-axis direction.

[0294] Moreover, on the third surface 60 of the base 27, conductive films 636 to 638 having electrical conductivity are formed.

[0295] For example, the conductive film 636 electrically connects the via 531 and the via 532. That is, the conductive film 636 electrically connects the n-electrode N10 and the n-electrode N11 of the semiconductor laser element 120. Also, for example, the conductive film 637 electrically connects the via 533 and the via 534. That is, the conductive film 637 electrically connects the n-electrode N12 and the n-electrode N13 of the semiconductor laser element 130. Also, for example, the conductive film 638 electrically connects the via 535 and the via 536. That is, the conductive film 638 electrically connects the n-electrode N14 and the n-electrode N15 of the semiconductor laser element 140.

[0296] According to these, for example, the n-electrode N11 of the semiconductor laser element 120 and the p-electrode P11 of the semiconductor laser element 130 are electrically connected via the pn wiring PN1. Also, for example, the n-electrodes N12 and N13 of the semiconductor laser element 130 are electrically connected via the vias 533 and 534 and the conductive film 637.

[0297] In addition, the central portion P24c of the p-wiring P24, the central portion PN1c of the pn-wiring PN1, and the central portion PN2c of the pn-wiring PN2 are exposed in the Y-axis direction from the rear ends (in this embodiment, the ends on the negative side of the Y-axis) of the semiconductor laser elements 120, 130, and 140, respectively.

[0298] As described above, as shown in Modifications 3 and 4, a plurality of semiconductor laser elements 110 may be connected in series by vias and conductive films, without using wires.

[0299] (Embodiment 5) Next, an array-type semiconductor laser device according to embodiment 5 will be described. In the description of the array-type semiconductor laser device according to embodiment 5, differences from the array-type semiconductor laser devices according to embodiments 1 to 4 will be mainly described, and the same components as those in the array-type semiconductor laser devices according to embodiments 1 to 4 will be denoted by the same reference numerals, and the description thereof may be omitted.

[0300] [composition] FIG. 41 is a top view showing an array-type semiconductor laser device 211 according to the fifth embodiment. FIG. 42 is a top view showing a semiconductor laser array element 103 according to the fifth embodiment. FIG. 43 is a cross-sectional view showing the array-type semiconductor laser device 211 according to the fifth embodiment taken along the line XLIV-XLIV in FIG. 41. FIG. 44 is a cross-sectional view showing the array-type semiconductor laser device 211 according to the fifth embodiment taken along the line XLIII-XLIII in FIG. 41. FIG. 45 is a top view showing a submount 228 according to the fifth embodiment. FIG. 46 is a bottom view showing the submount 228 according to the fifth embodiment. FIG. 47 is a bottom view showing the semiconductor laser array element 103 according to the fifth embodiment. FIG. 48 is a cross-sectional view showing the semiconductor laser array element 103 according to the fifth embodiment taken along the line XLVIII-XLVIII in FIG. 47. FIG. 49 is a cross-sectional view showing the semiconductor laser array element 103 according to the fifth embodiment taken along the line XLIX-XLIX in FIG. 47. FIG. 50 is an enlarged view showing the area surrounded by the dashed line L in FIG.

[0301] The array-type semiconductor laser device 211 includes a substrate 12, a semiconductor laser array element 103, and a submount 228. The submount 228 is formed by forming a wiring pattern and vias on a base .

[0302] The semiconductor laser array element 103 has a plurality of semiconductor laser elements 113. Specifically, the semiconductor laser array element 103 has a semiconductor laser element 123 (first semiconductor laser element), a semiconductor laser element 133 (second semiconductor laser element), and a semiconductor laser element 143 (third semiconductor laser element). The semiconductor laser array element 103 also includes, in order from the positive side of the X-axis, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, and an n-electrode N15. 47, when viewed from the bottom surface of the semiconductor laser array element 103, the n electrode N15, the p electrode P12, the n electrode N14, the n electrode N13, the p electrode P11, the n electrode N12, the n electrode N11, the p electrode P10, and the n electrode N10 are formed in a rectangular shape substantially the same as that of each of the wiring electrodes 360, and are covered by each of the wiring electrodes 360. In addition, the portion of the bottom surface of the semiconductor laser array element 103 where the wiring electrodes 360 are not exposed is covered with a protective film 350.

[0303] Specifically, the semiconductor laser element 123 includes an n-electrode N10, a p-electrode P10, and an n-electrode N11. The semiconductor laser element 133 includes an n-electrode N12, a p-electrode P11, and an n-electrode N13. The semiconductor laser element 143 includes an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0304] When the semiconductor laser element 123, the semiconductor laser element 133, and the semiconductor laser element 143 are described in common, they are also simply referred to as semiconductor laser element 113. Each of the semiconductor laser elements 113 has a via formed therethrough in the Z-axis direction.

[0305] The substrate 12 is a semiconductor substrate on whose underside the semiconductor laser array element 103 is formed. Through holes are formed in the substrate 12, and a plurality of vias 560 serving as electrodes are formed in the through holes. In the following description, when a common explanation is given for each of the vias provided in the semiconductor laser array element, they are also simply referred to as vias 560.

[0306] The semiconductor laser array element 103 has a fourth surface 70 located on the opposite side to the first surface 40 bonded to the base 28. Conductive films 660-662 electrically connected to the via 560 are formed on the fourth surface 70, which is the upper surface of the substrate 12. The via 560 penetrates the semiconductor layers such as the one-conductivity type semiconductor layer 300 of the substrate 12 and the semiconductor laser array element 103, and is electrically connected to the n-electrodes (n-electrodes N10-N15) through the wiring electrode 360. Specifically, for example, the n-electrodes N10 and N11 are electrically connected through the vias 561, 562 and the conductive film 660. Also, for example, the n-electrodes N12 and N13 are electrically connected through the vias 563, 564 and the conductive film 661. Also, for example, the n-electrodes N14 and N15 are electrically connected through the vias 565, 566 and the conductive film 662.

[0307] Here, if the substrate 12 is conductive, an insulating film 990 is formed on the side walls of the through holes, thereby insulating the substrate 12 from the vias 561 to 566. Also, if the substrate 12 is conductive, an insulating film 990 is formed on the fourth surface 70, thereby insulating the substrate 12 from the conductive films 660 to 662. Note that, if the substrate 12 is an insulating substrate, the insulating film 990 does not need to be formed.

[0308] Also, for example, each of the vias 561 to 556 is formed in a plurality of rows aligned in the Y-axis direction.

[0309] The base 28 is a base on which the semiconductor laser array element 103 is mounted. On a second surface 50 of the base 28, wiring patterns (wires A1, p-wires P25 to 27, and n-wires N28 to N33) are formed in the same layout as the base 22.

[0310] The submount 228 also includes a number of vias 500 .

[0311] The via 500 is a conductive electrode that penetrates the base 28 in a direction perpendicular to the second surface 50. Specifically, the via 500 electrically connects the pattern wiring formed on the second surface 50 of the base 28 to the pattern wiring formed on the third surface 60, which is the lower surface of the base 28 and is opposite to the second surface 50. In other words, the via 500 penetrates from the second surface 50 to the third surface 60.

[0312] The submount 228 has vias 537 to 542. A plurality of each of the vias 537 to 542 is formed and aligned in the Y-axis direction.

[0313] The vias 500 are electrically connected to one another by conductive films 639 to 641, respectively.

[0314] The conductive films 639 to 641 are films formed on the third surface 60 of the base 28 and have electrical conductivity.

[0315] For example, the conductive film 639 electrically connects the via 537 and the via 538. That is, the conductive film 639 connects the wiring A1 and the p-electrode P10 of the semiconductor laser element 123. Also, for example, the conductive film 640 electrically connects the via 539 and the via 540. That is, the conductive film 640 connects the n-electrode N11 of the semiconductor laser element 123 and the p-electrode P11 of the semiconductor laser element 133. Also, for example, the conductive film 641 electrically connects the via 541 and the via 542. That is, the conductive film 641 connects the n-electrode N13 of the semiconductor laser element 133 and the p-electrode P12 of the semiconductor laser element 143.

[0316] With the above configuration, for example, the n-electrode N11 and the p-electrode P11 are electrically connected through the vias 539 and 540 and the conductive film 640.

[0317] [Effects, etc.] As described above, in this embodiment, for example, the substrate 12 has the fourth surface 70 located on the opposite side to the first surface 40. In this case, for example, the semiconductor laser element 130 has a ninth through hole (a through hole in which the via 563 is formed) penetrating from the first surface 40 to the fourth surface 70, and a tenth through hole (a through hole in which the via 564 is formed) penetrating from the first surface 40 to the fourth surface 70. In this case, for example, the second conductor is made of an eleventh conductor (a via 563), a twelfth conductor (a via 564), and a fifth conductive film (a conductive film 661). In this case, for example, the fifth conductive film (a conductive film 661) is formed on the fourth surface 70. In this case, for example, the eleventh conductor (a via 563) is formed in the ninth through hole, and electrically connects the n-electrode N12 and the fifth conductive film (a conductive film 661). Also, in this case, for example, the twelfth conductor (via 564) is formed in the tenth through hole and electrically connects the n-electrode N13 and the fifth conductive film (conductive film 661).

[0318] According to this, the second conductor is not arranged on the first surface 40 of the array type semiconductor laser device 211. This makes it possible to prevent the arrangement of the first conductor and the second conductor on the first surface 40 of the array type semiconductor laser device 211 from becoming complicated. Furthermore, such a configuration makes it unnecessary to install wiring such as linear wires later. Therefore, current can be injected in the entire resonator length direction (Y-axis direction), making it easier to make the current density in the semiconductor laser element 113 uniform. This stabilizes the optical characteristics of the array type semiconductor laser device 211.

[0319] [Variations] Next, a description will be given of modified examples of the array-type semiconductor laser device according to the fifth embodiment. Note that in the modified examples described below, differences from the respective components of the array-type semiconductor laser device according to the fifth embodiment will be mainly described, and descriptions of the same components may be simplified or omitted.

[0320] Fig. 51 is a top view showing an array-type semiconductor laser device 212 according to a first modification of the fifth embodiment. Fig. 52 is a cross-sectional view showing the array-type semiconductor laser device 212 according to the first modification of the fifth embodiment, taken along the line LII-LII in Fig. 51.

[0321] The array-type semiconductor laser device 212 includes a substrate 12 , a semiconductor laser array element 103 , and a base 21 .

[0322] In other words, in the array-type semiconductor laser device 212, the n-electrodes N10 to N15 in the semiconductor laser elements 113 are electrically connected by conductive films 660 to 662 formed on the fourth surface 70 of the substrate 12, and the multiple semiconductor laser elements 113 are directly connected by wiring patterns (p-wiring P24, n-wirings N24 to N27, and pn-wirings PN1, PN2) formed on the second surface 50 of the base 21.

[0323] In this manner, the layout of each wiring that electrically connects the electrodes of the semiconductor laser element according to the present disclosure may be combined in any desired manner.

[0324] (Embodiment 6) Next, an array-type semiconductor laser device according to embodiment 6 will be described. In the description of the array-type semiconductor laser device according to embodiment 6, differences from the array-type semiconductor laser devices according to embodiments 1 to 5 will be mainly described, and the same components as those in the array-type semiconductor laser devices according to embodiments 1 to 5 will be denoted by the same reference numerals, and the description thereof will be omitted in some cases.

[0325] [composition] Fig. 53 is a top view showing an array-type semiconductor laser device 213 according to the sixth embodiment. Fig. 54 is a bottom view showing a semiconductor laser array element 104 according to the sixth embodiment. Fig. 55 is a cross-sectional view including a second conductor of the array-type semiconductor laser device 213 according to the sixth embodiment taken along the line LV-LV of Figs. 53 and 54. Fig. 56 is a cross-sectional view showing the array-type semiconductor laser device 213 according to the sixth embodiment taken along the line LVI-LVI of Figs. 53 and 54. Fig. 57 is a cross-sectional view including a first conductor of the array-type semiconductor laser device 213 according to the sixth embodiment taken along the line LVII-LVII of Figs. 53 and 54.

[0326] The array-type semiconductor laser device 213 includes a substrate 10, a semiconductor laser array element 104, and a base 29 (first base).

[0327] The semiconductor laser array element 104 has a plurality of semiconductor laser elements 114. Specifically, the semiconductor laser array element 104 has a semiconductor laser element 124 (first semiconductor laser element), a semiconductor laser element 134 (second semiconductor laser element), and a semiconductor laser element 144 (third semiconductor laser element). The semiconductor laser array element 104 also includes, in order from the positive side of the X-axis, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, an n-electrode N15, and a dummy electrode B.

[0328] Specifically, the semiconductor laser element 124 includes an n-electrode N10, a p-electrode P10, and an n-electrode N11. The semiconductor laser element 134 includes an n-electrode N12, a p-electrode P11, and an n-electrode N13. The semiconductor laser element 144 includes an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0329] When the semiconductor laser element 124, the semiconductor laser element 134, and the semiconductor laser element 144 are described in common, they are also simply referred to as the semiconductor laser element 114.

[0330] The semiconductor laser array element 104 has the same configuration as the semiconductor laser array element 100, and further includes a dummy portion 160, conductive films 663-668, insulating films 342-347, and protective films 352-357.

[0331] The dummy portion 160 is a portion that does not emit light and is formed alongside the semiconductor laser elements 114. The dummy portion 160 has a dummy electrode B.

[0332] The dummy electrode B is an electrode to be connected to the wiring A2 which is a pattern wiring formed on the second surface 50 of the base 29.

[0333] The conductive films 663 to 668 are conductive films. The conductive films 663 to 668 are formed on the first surface 40 of the semiconductor laser array element 104. The conductive films 663 to 668 are electrically connected to electrodes of the semiconductor laser array element 104.

[0334] For example, the conductive film 663 is electrically connected to the n-electrode N10 and the n-electrode N11. Also, for example, the conductive film 664 is electrically connected to the p-electrode P10 and the n-electrode N12. Also, for example, the conductive film 665 is electrically connected to the n-electrode N12 and the n-electrode N13. Also, for example, the conductive film 666 is electrically connected to the p-electrode P11 and the n-electrode N14. Also, for example, the conductive film 667 is electrically connected to the n-electrode N14 and the n-electrode N15. Also, for example, the conductive film 668 is electrically connected to the p-electrode P12 and the dummy electrode B.

[0335] The conductive films 664 , 666 , and 668 are also formed in the recess 150 of the semiconductor laser array element 104 .

[0336] Moreover, the conductive films 664 , 666 , and 668 are formed in the recess 153 having a shape corresponding to the recess 150 .

[0337] In the sixth embodiment, the conductive films 663 to 668 are connected to two of the electrodes of the semiconductor laser array element 104 at approximately the center of the electrodes in the Y-axis direction.

[0338] The insulating films 342 to 347 are insulating films for electrically insulating the plurality of electrodes of the semiconductor laser array element 104 from the conductive films 663 to 668.

[0339] For example, the insulating film 342 is located between the p-electrode P10 and the conductive film 663, and electrically insulates the p-electrode P10 and the conductive film 663 from each other.

[0340] Furthermore, for example, the insulating film 343 is located between the n-electrode N11 and the conductive film 664, and electrically insulates the n-electrode N11 and the conductive film 664 from each other.

[0341] Furthermore, for example, the insulating film 344 is located between the p-electrode P11 and the conductive film 665, and electrically insulates the p-electrode P11 and the conductive film 665 from each other.

[0342] Furthermore, for example, the insulating film 345 is located between the n-electrode N13 and the conductive film 666, and electrically insulates the n-electrode N13 and the conductive film 666 from each other.

[0343] Furthermore, for example, the insulating film 346 is located between the p-electrode P12 and the conductive film 667, and electrically insulates the p-electrode P12 and the conductive film 667 from each other.

[0344] Furthermore, for example, the insulating film 347 is located between the n-electrode N15 and the conductive film 668, and electrically insulates the n-electrode N15 and the conductive film 668 from each other.

[0345] The protective films 352 to 357 are insulating films for electrically insulating the conductive films 663 to 668 from the multiple wirings (n-wiring N36, n-wiring N38, n-wiring N40, and p-wirings P29 to P31) via the connection layer 370.

[0346] For example, the protective film 352 is located between the conductive film 663 and the connection layer 370 on the p-wiring line P29, and electrically insulates the conductive film 663 from the p-wiring line P29.

[0347] Furthermore, for example, the protective film 353 is located between the conductive film 664 and the connection layer 370 on the n-wiring N36, and electrically insulates the conductive film 664 from the n-wiring N36.

[0348] Furthermore, for example, the protective film 354 is located between the conductive film 665 and the connection layer 370 on the p-wiring P30, and electrically insulates the conductive film 665 from the p-wiring P30.

[0349] Furthermore, for example, the protective film 355 is located between the conductive film 666 and the connection layer 370 on the n-wiring N38, and electrically insulates the conductive film 666 from the n-wiring N38.

[0350] Furthermore, for example, the protective film 356 is located between the conductive film 667 and the connection layer 370 on the p-wiring P31, and electrically insulates the conductive film 667 from the p-wiring P31.

[0351] Furthermore, for example, the protective film 357 is located between the conductive film 668 and the connection layer 370 on the n-wiring N40, and electrically insulates the conductive film 668 from the n-wiring N40.

[0352] 54, the conductive films 663, 665, 667 and the conductive films 664, 666, 668 do not overlap in the Y-axis direction. That is, the conductive films 663, 665, 667 and the conductive films 664, 666, 668 are arranged at different positions in the Y-axis direction. When viewed from the bottom of the semiconductor laser array element 104, the conductive film 663 is made up of a conductive film 663b covering the n-electrode N10 and electrically connecting to the n-electrode N10, a conductive film 663c covering a part N11a of the n-electrode N11 and electrically connecting to the part N11a, and a conductive film 663a connecting the conductive film 663b and the conductive film 663c.

[0353] The n-electrode N11 consists of N11a which is covered with conductive film 663c and has the same shape as conductive film 663c, a part N11c which is covered with conductive film 663d and is electrically connected to conductive film 663d and has the same shape as conductive film 663d, and a part N11b which connects part N11a and part N11c.

[0354] The conductive film 664 is made up of a conductive film 664b covering a portion P10a of the p-electrode P10 and electrically connecting to a portion P10a, and a conductive film 664a connecting the conductive film 664b and the conductive film 665b.

[0355] The conductive film 665b is a part of the conductive film 665 that covers and electrically connects the N electrode N12.

[0356] The p-electrode P10 consists of a part P10a that is covered with the conductive film 664b and has the same shape as the conductive film 664b, a part P10c that is covered with the conductive film 664c, is electrically connected to the conductive film 664c, and has the same shape as the conductive film 664c, and a part P10b that connects the part P10a and the part P10c.

[0357] The conductive film 668 consists of a conductive film 668b covering a portion P12a of the p-electrode P12 and electrically connecting to the dummy electrode B, a conductive film 668d covering the dummy electrode B and electrically connecting to the dummy electrode B, and a conductive film 668a connecting the conductive film 668b and the conductive film 668d.

[0358] Moreover, the portion of the lower surface of the semiconductor laser array element 104 where the conductive film is not exposed is covered with a protective film 350. The protective films 352 to 357 are formed integrally with the protective film 350 and made of the same material. The shape of the dummy electrode B is the same as that of the conductive film 668d.

[0359] In a portion where the conductive film 663a and the P electrode P10b are laminated in the cross section taken along line LV-LV in Fig. 54, the P electrode P10b, the insulating film 342, the conductive film 663a, and the protective film 352 are formed in this order from the other-conductivity-type semiconductor layer 320 side, as shown in Fig. 55. In addition, in a portion where the conductive film 664a and the N electrode P11b are laminated in the cross section taken along line LVII-LVII in Fig. 54, the N electrode N11b, the insulating film 343, the conductive film 664a, and the protective film 353 are formed in this order from the one-conductivity-type semiconductor layer 300 side, as shown in Fig. 57.

[0360] The base 29 is a base on which the semiconductor laser array element 104 is mounted. A wiring pattern is formed on a second surface 50 of the base 29 to be electrically connected to electrodes of the semiconductor laser array element 104. Specifically, n-wires N35 to N40, p-wires P29 to P31, and a wire A2 are formed on the second surface 50 of the base 29.

[0361] For example, the n-electrode N10 is electrically connected to the n-wiring N35. Also, for example, the n-electrode N11 is electrically connected to the n-wiring N36. Also, for example, the n-electrode N12 is electrically connected to the n-wiring N37. Also, for example, the n-electrode N13 is electrically connected to the n-wiring N38. Also, for example, the n-electrode N14 is electrically connected to the n-wiring N39. Also, for example, the n-electrode N15 is electrically connected to the n-wiring N40.

[0362] Also, for example, the p-electrode P10 is electrically connected to the p-wiring P29. Also, for example, the p-electrode P11 is electrically connected to the p-wiring P30. Also, for example, the p-electrode P12 is electrically connected to the p-wiring P31.

[0363] Moreover, the wiring A2 is electrically connected to the dummy electrode B, for example.

[0364] With the above configuration, for example, the flow of electricity in array type semiconductor laser device 213 starts with wiring A2 which is the anode electrode, and goes as follows: wiring A2 → dummy electrode B → conductive film 668 (conductive film 668d → conductive film 668a → conductive film 668b) → p electrode P12 → n electrodes N14, N15 → conductive film 667 → conductive film 666 → p electrode P11 → n electrodes N12, N13 → conductive film 665 → conductive film 664 → p electrode P10 → n electrodes N10, N11 → n wiring N35 which is the cathode electrode.

[0365] The current from the p-electrode P12 to the conductive film 666 may flow through the path of p-electrode P12 → n-electrode N14 → conductive film 667 → conductive film 666, or through the path of p-electrode P12 → n-electrode N15 → conductive film 667 → conductive film 666. Similarly, the current from the p-electrode P11 to the conductive film 664 may flow through the path of p-electrode P11 → n-electrode N12 → conductive film 665 → conductive film 664, or through the path of p-electrode P11 → n-electrode N13 → conductive film 665 → conductive film 664. Similarly, the current from the p-electrode P10 to the n-wiring N35 may flow through the path of p-electrode P10 → n-electrode N10 → conductive film 663b → n-wiring N35, or through the path of p-electrode P10 → n-electrode N11 → conductive film 663c → conductive film 663a → conductive film 663b → n-wiring N35.

[0366] In this manner, in the semiconductor laser array element 104 , a plurality of semiconductor laser elements 114 are connected in series without going through the pattern wiring formed on the base 29 .

[0367] [Effects, etc.] As described above, in this embodiment, for example, array-type semiconductor laser device 213 further has recess 150 between semiconductor laser element 124 and semiconductor laser element 134. Also in this embodiment, the first conductor (conductive film 664) is formed in recess 150.

[0368] This allows the p-electrode P10 and the n-electrode N12 to be electrically connected over a shorter distance.

[0369] [Variations] Next, a description will be given of modified examples of the array-type semiconductor laser device according to the sixth embodiment. Note that in the modified examples described below, differences from the respective components of the array-type semiconductor laser device according to the sixth embodiment will be mainly described, and descriptions of the same components may be simplified or omitted.

[0370] <Variation 1> Fig. 58 is a bottom view showing a semiconductor laser array element 105 according to a first modification of the sixth embodiment. Fig. 59 is a cross-sectional view taken along line LIX-LIX in Fig. 58, including a second conductor, of the semiconductor laser array element 105 according to the first modification of the sixth embodiment. Fig. 60 is a cross-sectional view taken along line LX-LX in Fig. 58, including a first conductor, of the semiconductor laser array element 105 according to the first modification of the sixth embodiment. Fig. 61 is a cross-sectional view taken along line LXI-LXI in Fig. 58, including a first conductor, of the semiconductor laser array element 105 according to the first modification of the sixth embodiment.

[0371] The semiconductor laser array element 105 has a plurality of semiconductor laser elements 115. Specifically, the semiconductor laser array element 105 has a semiconductor laser element 125 (first semiconductor laser element), a semiconductor laser element 135 (second semiconductor laser element), and a semiconductor laser element 145 (third semiconductor laser element). The semiconductor laser array element 105 also includes, in order from the positive side of the X-axis, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, an n-electrode N15, and a dummy electrode B.

[0372] Specifically, the semiconductor laser element 125 includes an n-electrode N10, a p-electrode P10, and an n-electrode N11. The semiconductor laser element 135 includes an n-electrode N12, a p-electrode P11, and an n-electrode N13. The semiconductor laser element 145 includes an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0373] When the semiconductor laser element 125, the semiconductor laser element 135, and the semiconductor laser element 145 are described in common, they are also simply referred to as the semiconductor laser element 115.

[0374] The semiconductor laser array element 105 has the same configuration as the semiconductor laser array element 100, and further includes a dummy portion 160, conductive films 669-674, insulating films 910-915, and protective films 950-955.

[0375] The dummy portion 160 is formed alongside the plurality of semiconductor laser elements 115 .

[0376] The conductive films 669 to 674 are conductive films. The conductive films 669 to 674 are formed on the first surface 40 of the semiconductor laser array element 105. The conductive films 669 to 674 are electrically connected to electrodes of the semiconductor laser array element 105.

[0377] For example, the conductive film 669 is electrically connected to the n-electrode N10 and the n-electrode N11. Also, for example, the conductive film 670 is electrically connected to the p-electrode P10 and the n-electrode N12. Also, for example, the conductive film 671 is electrically connected to the n-electrode N12 and the n-electrode N13. Also, for example, the conductive film 672 is electrically connected to the p-electrode P11 and the n-electrode N14. Also, for example, the conductive film 673 is electrically connected to the n-electrode N14 and the n-electrode N15. Also, for example, the conductive film 674 is electrically connected to the p-electrode P12 and the dummy electrode B.

[0378] In this modification, the conductive films 669, 671 and the conductive film 673 are connected to two of the electrodes at rear ends of the electrodes in the Y-axis direction. The conductive films 670, 672 and the conductive film 674 are connected to two of the electrodes at emission side ends of the electrodes in the Y-axis direction. The conductive films 669, 671 and the conductive film 673 are connected to the end of the electrode opposite in the Y-axis direction to the end of the electrode to which the conductive films 670, 672 and the conductive film 674 are connected.

[0379] The insulating films 910 to 915 are insulating films for electrically insulating the plurality of electrodes of the semiconductor laser array element 105 from the conductive films 669 to 674.

[0380] For example, the insulating film 910 is located between the p-electrode P10 and the conductive film 669, and electrically insulates the p-electrode P10 from the conductive film 669. Also, for example, the insulating film 911 is located between the n-electrode N11 and the conductive film 670, and electrically insulates the n-electrode N11 from the conductive film 670. Also, for example, the insulating film 912 is located between the p-electrode P11 and the conductive film 671, and electrically insulates the p-electrode P11 from the conductive film 671. Also, for example, the insulating film 913 is located between the n-electrode N13 and the conductive film 672, and electrically insulates the n-electrode N13 from the conductive film 672. Also, for example, the insulating film 914 is located between the p-electrode P12 and the conductive film 673, and electrically insulates the p-electrode P12 from the conductive film 673. Furthermore, for example, the insulating film 915 is located between the n-electrode N15 and the conductive film 674, and electrically insulates the n-electrode N15 and the conductive film 674 from each other.

[0381] The protective films 950 to 955 are insulating films for electrically insulating the conductive films 669 to 674 from the multiple wirings (n-wiring N36, n-wiring N38, n-wiring N40, and p-wirings P29 to P31) via the connection layer 370.

[0382] For example, the protective film 950 is located between the conductive film 669 and the connection layer 370 on the p-wiring P29, and electrically insulates the conductive film 670 from the p-wiring P29.

[0383] Furthermore, for example, the protective film 951 is located between the conductive film 670 and the connection layer 370 on the n-wiring N36, and electrically insulates the conductive film 670 from the n-wiring N36.

[0384] Furthermore, for example, the protective film 952 is located between the conductive film 671 and the connection layer 370 on the p-wiring P30, and electrically insulates the conductive film 671 from the p-wiring P30.

[0385] Furthermore, for example, the protective film 953 is located between the conductive film 672 and the connection layer 370 on the n-wiring N38, and electrically insulates the conductive film 672 from the n-wiring N38.

[0386] Furthermore, for example, the protective film 954 is located between the conductive film 673 and the connection layer 370 on the p-wiring P31, and electrically insulates the conductive film 673 from the p-wiring P31.

[0387] For example, the protective film 955 is located between the conductive film 674 and the connection layer 370 on the n-wiring N40, and electrically insulates the conductive film 674 from the n-wiring N40.

[0388] When viewed from the bottom of the semiconductor laser element 105, the conductive film 669 consists of a conductive film 669b that covers the n-electrode N10 and is electrically connected to the n-electrode N10, a conductive film 669c that covers a portion N11a of the n-electrode N11 and is electrically connected to the portion N11a, and a conductive film 669a that connects the conductive film 669b and the conductive film 669c.

[0389] The n-electrode N11 is made up of a portion N11a that is covered with conductive film 669c and has the same shape as conductive film 669c, and N11b that is covered with conductive film 670a and connected to N11a.

[0390] The conductive film 670 is made up of a conductive film 670b that covers a portion P10a of the p-electrode P10 and is electrically connected to a portion P10a, and a conductive film 670a that connects the conductive film 670b and the conductive film 671b.

[0391] The conductive film 671b is a part of the conductive film 671 that covers and electrically connects to the N electrode N12.

[0392] The p-electrode P10 is made up of a portion P10a that is covered with the conductive film 670b and has the same shape as the conductive film 670b, and a portion P10b that is connected to the portion P10a.

[0393] The conductive film 674 consists of a conductive film 674b that covers a portion P12a of the p-electrode P12 and is electrically connected to the portion P12a, a conductive film 674c that covers the dummy electrode B and is electrically connected to the dummy electrode B, and a conductive film 674a that connects the conductive film 674b and the conductive film 674c.

[0394] Moreover, the portion of the lower surface of the semiconductor laser array element 105 where the conductive film is not exposed is covered with a protective film 350. The shape of the dummy electrode B is the same as that of the conductive film 674c.

[0395] With the above configuration, for example, the flow of electricity in semiconductor laser array element 105 is dummy electrode B → conductive film 674 → p electrode P12 → n electrodes N14, N15 → conductive film 672 → p electrode P11 → n electrodes N12, N13 → conductive film 670 → p electrode P10 → n electrodes N10, N11.

[0396] The current from the p electrode P12 to the conductive film 672 may flow through the path of p electrode P12 → n electrode N14 → conductive film 672, or through the path of p electrode P12 → n electrode N15 → conductive film 673 → conductive film 672. Similarly, the current from the p electrode P11 to the conductive film 670 may flow through the path of p electrode P11 → n electrode N12 → conductive film 670, or through the path of p electrode P11 → n electrode N13 → conductive film 671 → conductive film 670. Similarly, the current from the p electrode P10 to the conductive film 669 may flow through the path of p electrode P10 → n electrode N10 → conductive film 669, or through the path of p electrode P10 → n electrode N11 → conductive film 669.

[0397] In this manner, in the semiconductor laser array element 105 as well, a plurality of semiconductor laser elements 115 are connected in series without going through pattern wiring formed on the base on which the semiconductor laser array element 105 is mounted.

[0398] <Variation 2> Fig. 62 is a bottom view showing a semiconductor laser array element 106 according to Modification 2 of the sixth embodiment. Fig. 63 is a cross-sectional view including a second conductor of the semiconductor laser array element 106 according to Modification 2 of the sixth embodiment, taken along line LXIII-LXIII in Fig. 62. Fig. 64 is a cross-sectional view showing the semiconductor laser array element 106 according to Modification 2 of the sixth embodiment, taken along line LXIV-LXIV in Fig. 62. Fig. 65 is a cross-sectional view including a first conductor of the semiconductor laser array element 106 according to Modification 2 of the sixth embodiment, taken along line LXV-LXV in Fig. 62.

[0399] Note that the cross section taken along line LXIII-LXIII in Fig. 62 has the same shape as the cross section taken along line LXIIIA-LXIIIA in Fig. 62. Also, the cross section taken along line LXV-LXV in Fig. 62 has the same shape as the cross section taken along line LXVA-LXVA in Fig. 62.

[0400] The semiconductor laser array element 106 has a plurality of semiconductor laser elements 116. Specifically, the semiconductor laser array element 106 has a semiconductor laser element 126 (first semiconductor laser element), a semiconductor laser element 136 (second semiconductor laser element), and a semiconductor laser element 146 (third semiconductor laser element). The semiconductor laser array element 106 also includes, in order from the negative X-axis direction side, a dummy electrode B, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0401] Specifically, the semiconductor laser element 126 includes an n-electrode N10, a p-electrode P10, and an n-electrode N11. The semiconductor laser element 136 includes an n-electrode N12, a p-electrode P11, and an n-electrode N13. The semiconductor laser element 146 includes an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0402] When the semiconductor laser element 126, the semiconductor laser element 136, and the semiconductor laser element 146 are described in common, they are also simply referred to as the semiconductor laser element 116.

[0403] The semiconductor laser array element 106 has the same configuration as the semiconductor laser array element 100, and further includes a dummy portion 160, conductive films 675-680, insulating films 916-921, and protective films 956-961.

[0404] The dummy portion 160 is formed alongside the multiple semiconductor laser elements 116 .

[0405] The conductive films 675 to 680 are conductive films. The conductive films 675 to 680 are formed on the first surface 40 of the semiconductor laser array element 106. The conductive films 675 to 680 are electrically connected to electrodes of the semiconductor laser array element 106.

[0406] For example, the conductive film 675 is electrically connected to the dummy electrode B and the p-electrode P10. Also, for example, the conductive film 676 is electrically connected to the n-electrode N10 and the n-electrode N11. Also, for example, the conductive film 677 is electrically connected to the n-electrode N11 and the p-electrode P11. Also, for example, the conductive film 678 is electrically connected to the n-electrode N12 and the n-electrode N13. Also, for example, the conductive film 679 is electrically connected to the n-electrode N13 and the p-electrode P12. Also, for example, the conductive film 680 is electrically connected to the n-electrode N14 and the n-electrode N15.

[0407] The insulating films 916 to 921 are insulating films for electrically insulating the plurality of electrodes of the semiconductor laser array element 106 from the conductive films 675 to 680.

[0408] For example, the insulating film 916 is located between the n-electrode N10 and the conductive film 675, and electrically insulates the n-electrode N10 from the conductive film 675. Also, for example, the insulating film 917 is located between the p-electrode P10 and the conductive film 676, and electrically insulates the p-electrode P10 from the conductive film 676. Also, for example, the insulating film 918 is located between the n-electrode N12 and the conductive film 677, and electrically insulates the n-electrode N12 from the conductive film 677. Also, for example, the insulating film 919 is located between the p-electrode P11 and the conductive film 678, and electrically insulates the p-electrode P11 from the conductive film 678. Also, for example, the insulating film 920 is located between the n-electrode N14 and the conductive film 679, and electrically insulates the n-electrode N14 from the conductive film 679. Furthermore, for example, the insulating film 921 is located between the p-electrode P12 and the conductive film 680, and electrically insulates the p-electrode P12 and the conductive film 680 from each other.

[0409] The protective films 956 to 961 are insulating films for electrically insulating the conductive films 675 to 680 from the multiple wirings (n-wiring N36, n-wiring N38, n-wiring N40, and p-wirings P29 to P31) via the connection layer 370.

[0410] For example, the protective film 961 is located between the conductive film 680 and the connection layer 370 on the p-wiring line P29, and electrically insulates the conductive film 680 from the p-wiring line P29.

[0411] Furthermore, for example, the protective film 960 is located between the conductive film 679 and the connection layer 370 on the n-wiring N36, and electrically insulates the conductive film 679 from the n-wiring N36.

[0412] Furthermore, for example, the protective film 959 is located between the conductive film 678 and the connection layer 370 on the p-wiring P30, and electrically insulates the conductive film 678 from the p-wiring P30.

[0413] Furthermore, for example, the protective film 958 is located between the conductive film 677 and the connection layer 370 on the n-wiring N38, and electrically insulates the conductive film 677 from the n-wiring N38.

[0414] Furthermore, for example, the protective film 957 is located between the conductive film 676 and the connection layer 370 on the p-wiring P31, and electrically insulates the conductive film 670 from the p-wiring P31.

[0415] Furthermore, for example, the protective film 956 is located between the conductive film 675 and the connection layer 370 on the n-wiring N40, and electrically insulates the conductive film 675 from the n-wiring N40.

[0416] When viewed from the underside of semiconductor laser array element 106, conductive film 680 consists of conductive film 680c covering n-electrode N15 and electrically connecting it to n-electrode N15, conductive film 680e covering part N14a of n-electrode N14 and electrically connecting it to part N14a, conductive film 680d covering part N14b of n-electrode N14 and electrically connecting it to part N14b, conductive film 680a connecting conductive film 680c and conductive film 680d, and conductive film 680b connecting conductive film 680c and conductive film 680e.

[0417] The n-electrode N14 consists of a portion N14b that is covered with conductive film 680d and has the same shape as conductive film 680d, a portion N14a that is covered with conductive film 680e, is electrically connected to conductive film 680e and has the same shape as conductive film 680e, a portion N14c that connects portions N14a and N14b, and a portion N14d that connects portions N14a and N14b.

[0418] The conductive film 679 consists of a conductive film 679d covering a portion P12a of the p-electrode P12 and electrically connecting to the portion P12a, a conductive film 679c covering a portion P12c of the p-electrode P12 and electrically connecting to the portion P12c, a conductive film 679a connecting the conductive film 679c and the conductive film 678a, and a conductive film 679b connecting the conductive film 679d and the conductive film 678a.

[0419] The conductive film 678a is a part of the conductive film 678 that covers and electrically connects the N electrode N13.

[0420] The p-electrode P12 consists of a part P12a that is covered with the conductive film 679d and has the same shape as the conductive film 679d, a part P12c that is covered with the conductive film 679c and is electrically connected to the conductive film 679c and has the same shape as the conductive film 679c, a part P12b that connects the part P12a and the part P12c, and a part P12d that connects the part P12c.

[0421] The conductive film 675 consists of a conductive film 675d covering a portion P10a of the p-electrode P10 and electrically connecting to that portion P10a, a conductive film 675c covering a portion P10c of the p-electrode P10 and electrically connecting to that portion P10c, a conductive film 675e covering a dummy electrode B and electrically connecting to that portion, a conductive film 675a ​​connecting the conductive film 675c and the conductive film 675e, and a conductive film 675b connecting the conductive film 675d and the conductive film 675e.

[0422] Moreover, the portion of the lower surface of the semiconductor laser array element 106 where the conductive film is not exposed is covered with a protective film 350. The shape of the dummy electrode B is the same as that of the conductive film 675e.

[0423] With the above configuration, for example, the flow of electricity in semiconductor laser array element 106 is as follows: dummy electrode B → conductive film 675 → p-electrode P10 → n-electrodes N10, N11 → conductive film 677 → p-electrode P11 → n-electrodes N12, N13 → conductive film 679 → p-electrode P12 → n-electrodes N14, N15.

[0424] The current from the p electrode P10 to the conductive film 677 may flow through the path of p electrode P10 → n electrode N11 → conductive film 677, or through the path of p electrode P10 → n electrode N10 → conductive film 676 → conductive film 677. Similarly, the current from the p electrode P11 to the conductive film 679 may flow through the path of p electrode P11 → n electrode N13 → conductive film 679, or through the path of p electrode P11 → n electrode N12 → conductive film 678 → conductive film 679. Similarly, the current from the p electrode P12 to the conductive film 680 may flow through the path of p electrode P12 → n electrode N14 → conductive film 680d (conductive film 680e) → conductive film 680a (conductive film 680b) → conductive film 680c, or through the path of p electrode P10 → n electrode N15 → conductive film 680c.

[0425] In this manner, in the semiconductor laser array element 106 as well, a plurality of semiconductor laser elements 116 are connected in series without going through pattern wiring formed on the base on which the semiconductor laser array element 106 is mounted.

[0426] The semiconductor laser array element 106 also has a plurality of conductive films 675 to 680, insulating films 916 to 921, and protective films 956 to 961. Specifically, the plurality of conductive films 675 to 680 and insulating films 916 to 921 are each formed in a plurality of pieces aligned in the Y-axis direction.

[0427] In this manner, in this modification, a first conductor (conductive film 677 in this modification) is formed on first surface 40.

[0428] This allows the p-electrode P11 and the n-electrode N11 to be electrically connected over a shorter distance.

[0429] Furthermore, for example, a conductive film 677 is formed on the n-electrode N12 via a first insulating film (insulating film 918).

[0430] This allows electrical insulation between the n-electrode N12 and the conductive film 677.

[0431] Furthermore, for example, a plurality of conductive films 677 are formed in the Y-axis direction.

[0432] This allows current to flow uniformly between the p-electrode P11 and the n-electrode N11 in the Y-axis direction. For example, when there is one first conductor, a problem occurs in which current flows intensively between the p-electrode P11 and the n-electrode N11 near the first conductor. However, this configuration prevents the problem of current flowing intensively between the p-electrode P11 and the n-electrode N11 near the first conductor, and allows current to flow uniformly between the p-electrode P11 and the n-electrode N11 in the Y-axis direction.

[0433] In addition, for example, a second conductor (in this modification, a conductive film 678) is formed on the first surface 40.

[0434] This allows the n-electrode N12 and the n-electrode N13 to be connected over a shorter distance.

[0435] Furthermore, for example, a conductive film 678 is formed on the p-electrode P11 via a second insulating film (insulating film 919).

[0436] This allows electrical insulation between the p-electrode P11 and the conductive film 678.

[0437] Furthermore, for example, a plurality of conductive films 678 are formed in the Y-axis direction.

[0438] This allows current to flow uniformly through the n-electrodes N12 and N13 in the Y-axis direction. For example, when there is one second conductor, a problem occurs in which current flows intensively through the n-electrodes N12 and N13 near the second conductor. However, this configuration prevents the problem of current flowing intensively through the n-electrodes N12 and N13 near the second conductor, and allows current to flow uniformly through the n-electrodes N12 and N13 in the Y-axis direction.

[0439] Furthermore, for example, a conductive film 677 is formed on the n-electrode N12 via an insulating film 918, and a conductive film 678 is formed on the other-conductivity-type semiconductor layer 321 via an insulating film 919. Furthermore, for example, the conductive films 677 and 678 do not overlap in the Y-axis direction.

[0440] This makes it possible to prevent contact between the first conductor and the second conductor.

[0441] (Embodiment 7) Next, an array-type semiconductor laser device according to embodiment 7 will be described. In the description of the array-type semiconductor laser device according to embodiment 7, differences from the array-type semiconductor laser devices according to embodiments 1 to 6 will be mainly described, and the same components as those in the array-type semiconductor laser devices according to embodiments 1 to 6 will be denoted by the same reference numerals, and the description thereof may be omitted.

[0442] [composition] Fig. 66 is a top view showing an array-type semiconductor laser device 214 according to the seventh embodiment. 7 Seventh embodiment of the present invention will be described with reference to the drawings. Fig. 68 is a bottom view showing a semiconductor laser array element 107 according to the seventh embodiment. Fig. 68 is a cross-sectional view showing an array-type semiconductor laser device 214 according to the seventh embodiment, taken along line LXVIII-LXVIII in Figs. 66 and 67. Fig. 69 is a cross-sectional view including a second conductor of the array-type semiconductor laser device 214 according to the seventh embodiment, taken along line LXIX-LXIX in Figs. 66 and 67.

[0443] The array-type semiconductor laser device 214 includes a substrate 10, a semiconductor laser array element 107, and a base 21 (first base).

[0444] The semiconductor laser array element 107 has a plurality of semiconductor laser elements 117. Specifically, the semiconductor laser array element 107 has a semiconductor laser element 127 (first semiconductor laser element), a semiconductor laser element 137 (second semiconductor laser element), and a semiconductor laser element 147 (third semiconductor laser element). The semiconductor laser array element 107 also includes, in order from the positive side of the X-axis, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0445] Specifically, the semiconductor laser element 127 includes an n-electrode N10, a p-electrode P10, and an n-electrode N11. The semiconductor laser element 137 includes an n-electrode N12, a p-electrode P11, and an n-electrode N13. The semiconductor laser element 147 includes an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0446] When the semiconductor laser element 127, the semiconductor laser element 137, and the semiconductor laser element 147 are described in common, they are also simply referred to as the semiconductor laser element 117.

[0447] The semiconductor laser array element 107 has the same configuration as the semiconductor laser array element 100, and further includes conductive films 681-683, insulating films 922-924, and protective films 962-964.

[0448] The conductive films 681 to 683 are conductive films. The conductive films 681 to 683 are formed on the first surface 40 of the semiconductor laser array element 107. The conductive films 681 to 683 are electrically connected to electrodes of the semiconductor laser array element 107.

[0449] For example, the conductive film 681 is electrically connected to the n-electrodes N10 and N11. Also, for example, the conductive film 682 is electrically connected to the n-electrodes N12 and N13. Also, for example, the conductive film 683 is electrically connected to the n-electrodes N14 and N15.

[0450] Since the conductive films 681 to 683 electrically connect the two n-electrodes of the semiconductor laser element 117, a current easily flows uniformly through the two n-electrodes.

[0451] The insulating films 922 to 924 are insulating films for electrically insulating the plurality of electrodes of the semiconductor laser array element 107 from the conductive films 681 to 683.

[0452] In the seventh embodiment, the conductive films 681 to 683 are connected to the two n-electrodes of the semiconductor laser element 117 at approximately the center between the two n-electrodes in the Y-axis direction.

[0453] For example, the insulating film 922 is located between the p-electrode P10 and the conductive film 681, and electrically insulates the p-electrode P10 from the conductive film 681. Specifically, the conductive film 681 is formed below the p-electrode P10 with the insulating film 922 interposed therebetween.

[0454] Furthermore, for example, the insulating film 923 is located between the p-electrode P11 and the conductive film 682, and electrically insulates the p-electrode P11 from the conductive film 682. Specifically, the conductive film 682 is formed below the p-electrode P11 with the insulating film 923 interposed therebetween.

[0455] Furthermore, for example, the insulating film 924 is located between the p electrode P12 and the conductive film 683, and electrically insulates the p electrode P12 from the conductive film 683. Specifically, the conductive film 683 is formed below the p electrode P12 with the insulating film 923 interposed therebetween.

[0456] The protective films 962 to 964 are insulating films for electrically insulating the conductive films 681 to 683 from the multiple wirings (the p-wiring P24, the pn-wiring PN1, and the pn-wiring PN2) via the connection layer 370.

[0457] For example, the protective film 962 is located between the conductive film 681 and the connection layer 370 on the p-wiring line P24, and electrically insulates the conductive film 681 from the p-wiring line P24.

[0458] Furthermore, for example, protective film 963 is located between conductive film 682 and connection layer 370 on pn wiring PN1, and electrically insulates conductive film 682 from pn wiring PN1.

[0459] Furthermore, for example, the protective film 964 is located between the conductive film 683 and the connection layer 370 on the pn wiring PN2, and electrically insulates the conductive film 683 from the pn wiring PN2.

[0460] Moreover, when viewed from the underside of semiconductor laser array element 107, conductive film 681 consists of conductive film 681c covering n-electrode N10 and electrically connecting to n-electrode N10, conductive film 681b covering n-electrode N11 and electrically connecting to n-electrode N11, and conductive film 681a connecting conductive film 681b and conductive film 681c.

[0461] The p-electrode P10 is composed of a part P10a that is covered by and electrically connected to the wiring electrode 360 ​​and has the same shape as the wiring electrode 360, a part P10c that is covered by and electrically connected to the wiring electrode 360 ​​and has the same shape as the wiring electrode 360, and a part P10b that connects the part P10a and the part P10c. In addition, a portion of the lower surface of the semiconductor laser array element 107 where the conductive film is not exposed is covered with a protective film 350.

[0462] In FIG. 69, in the portion where the conductive film 681a and the P electrode P10b are laminated, the P electrode P10b, the insulating film 922, the conductive film 681a, and the protective film 962 are formed in this order from the other conductivity type semiconductor layer 320 side.

[0463] On the base 21, conductive pattern wirings (p wiring P24, n wirings N24 to N27, and pn wirings PN1, PN2) are formed.

[0464] In addition, the central portion P24c of the p wiring P24, the central portion PN1c of the pn wiring PN1, and the central portion PN2c of the pn wiring PN2 are exposed from the rear end of the semiconductor laser array element 107 in the Y-axis direction (in this embodiment, the end portion on the negative side of the Y-axis).

[0465] With the above configuration, for example, the flow of electricity in array-type semiconductor laser device 214 starts with the p-wiring P24, which is the anode electrode, and goes as follows: p-wiring P24 → p-electrode P10 → n-electrodes N10, N11 → pn-wiring PN1 → p-electrode P11 → n-electrodes N12, N13 → pn-wiring PN2 → p-electrode P12 → n-electrodes N14, N15 → n-wiring N27, which is the cathode electrode.

[0466] The current from the p-electrode P10 to the p-n wiring PN1 may flow through the path of p-electrode P10→n-electrode N11→p-n wiring PN1, or through the path of p-electrode P10→n-electrode N10→conductive film 681→p-n wiring PN1. Similarly, the current from the p-electrode P11 to the p-n wiring PN2 may flow through the path of p-electrode P11→n-electrode N13→p-n wiring PN2, or through the path of p-electrode P11→n-electrode N12→conductive film 682→p-n wiring PN2. Similarly, the current from the p-electrode P12 to the n-wiring N27 may flow through the path of p-electrode P12→n-electrode N15→n-wiring N27, or through the path of p-electrode P10→n-electrode N14→conductive film 683→n-wiring N27.

[0467] According to this, the wiring for connecting the semiconductor laser elements 117 in series can be shared between the semiconductor laser array element 107 and the base 21. Therefore, the structure can be simplified by eliminating wiring such as wires on the base 21, for example.

[0468] [Variations] Next, a description will be given of modified examples of the array-type semiconductor laser device according to the seventh embodiment. Note that in the modified examples described below, differences from the respective components of the array-type semiconductor laser device according to the seventh embodiment will be mainly described, and descriptions of the same components may be simplified or omitted.

[0469] Fig. 70 is a bottom view showing a semiconductor laser array element 108 according to a modification of the seventh embodiment. Fig. 71 is a cross-sectional view including a first conductor of the semiconductor laser array element 108 according to a modification of the seventh embodiment, taken along line LXXI-LXXI in Fig. 70. Fig. 72 is a cross-sectional view showing the semiconductor laser array element 108 according to a modification of the seventh embodiment, taken along line LXXII-LXXII in Fig. 70.

[0470] Although not shown, the semiconductor laser array element 108 is mounted on the base 21 in the same manner as the semiconductor laser array element 107 .

[0471] The semiconductor laser array element 108 has a plurality of semiconductor laser elements 118. Specifically, the semiconductor laser array element 108 has a semiconductor laser element 128 (first semiconductor laser element), a semiconductor laser element 138 (second semiconductor laser element), and a semiconductor laser element 148 (third semiconductor laser element). The semiconductor laser array element 108 also includes, in order from the positive side of the X-axis, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0472] Specifically, the semiconductor laser element 128 includes an n-electrode N10, a p-electrode P10, and an n-electrode N11. The semiconductor laser element 138 includes an n-electrode N12, a p-electrode P11, and an n-electrode N13. The semiconductor laser element 148 includes an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0473] When the semiconductor laser element 128, the semiconductor laser element 138, and the semiconductor laser element 148 are described in common, they are also simply referred to as the semiconductor laser element 118.

[0474] The semiconductor laser array element 108 has the same configuration as the semiconductor laser array element 100, and further includes conductive films 684-686, insulating films 925-927, and protective films 965-967.

[0475] The conductive films 684 to 686 are conductive films. The conductive films 684 to 686 are formed on the first surface 40 of the semiconductor laser array element 108. The conductive films 684 to 686 are electrically connected to electrodes of the semiconductor laser array element 108.

[0476] For example, the conductive film 684 is electrically connected to the n-electrodes N10 and N11. Also, for example, the conductive film 685 is electrically connected to the n-electrodes N12 and N13. Also, for example, the conductive film 686 is electrically connected to the n-electrodes N14 and N15.

[0477] Since the conductive films 684 to 686 electrically connect the two n-electrodes of the semiconductor laser element 118, a current easily flows uniformly through the two n-electrodes.

[0478] In this modification, the conductive films 684 to 686 are connected to the two n-electrodes of the semiconductor laser element 118 at their ends in the Y-axis direction.

[0479] In this way, the layout of the conductive film connected to the two n-electrodes of the semiconductor laser element is not particularly limited.

[0480] The insulating films 925 to 927 are insulating films for electrically insulating the plurality of electrodes of the semiconductor laser array element 108 from the conductive films 684 to 686.

[0481] For example, the insulating film 925 is located between the p-electrode P10 and the conductive film 684, and electrically insulates the p-electrode P10 from the conductive film 684. Specifically, below the p-electrode P10, the conductive film 684 is formed with the insulating film 925 interposed therebetween.

[0482] Furthermore, for example, the insulating film 926 is located between the p-electrode P11 and the conductive film 685, and electrically insulates the p-electrode P11 from the conductive film 685. Specifically, the conductive film 685 is formed below the p-electrode P11 with the insulating film 926 interposed therebetween.

[0483] Furthermore, for example, the insulating film 927 is located between the p electrode P12 and the conductive film 686, and electrically insulates the p electrode P12 from the conductive film 686. Specifically, the conductive film 686 is formed below the p electrode P12 with the insulating film 927 interposed therebetween.

[0484] The protective films 965 to 967 are insulating films for electrically insulating the conductive films 684 to 686 from the multiple wirings (p wiring P24, pn wiring PN1, and pn wiring PN2) via the connection layer 370.

[0485] For example, the protective film 965 is located between the conductive film 684 and the connection layer 370 on the p-wiring P24, and electrically insulates the conductive film 684 from the p-wiring P24.

[0486] For example, protective film 966 is located between conductive film 685 and connection layer 370 on pn wiring PN1, and electrically insulates conductive film 685 from pn wiring PN1.

[0487] For example, protective film 967 is located between conductive film 686 and connection layer 370 on pn wiring PN2, and electrically insulates conductive film 686 from pn wiring PN2.

[0488] Viewed from the bottom, conductive film 684 consists of conductive film 684b covering n-electrode N10 and electrically connected to n-electrode N10, conductive film 684c covering n-electrode N11 and electrically connected to n-electrode N11, and conductive film 684a connecting conductive film 684b and conductive film 684c. p-electrode P10 consists of P10b which is covered by wiring electrode 360, electrically connected to wiring electrode 360, and has the same shape as wiring electrode 360, and P10a which is connected to P10b. In addition, the portion of the bottom surface where the conductive film is not exposed is covered with protective film 350.

[0489] With the above configuration, for example, the flow of electricity in semiconductor laser array element 108 starts with the p-wiring P24, which is the anode electrode, and goes as follows: p-wiring P24 → p-electrode P10 → n-electrodes N10, N11 → pn-wiring PN1 → p-electrode P11 → n-electrode N12, N13 → pn-wiring PN2 → p-electrode P12 → n-electrodes N14, N15 → n-wiring N27, which is the cathode electrode.

[0490] The current from the p-electrode P10 to the p-n wiring PN1 may flow through the path of p-electrode P10→n-electrode N11→p-n wiring PN1, or through the path of p-electrode P10→n-electrode N10→conductive film 684→p-n wiring PN1. Similarly, the current from the p-electrode P11 to the p-n wiring PN2 may flow through the path of p-electrode P11→n-electrode N13→p-n wiring PN2, or through the path of p-electrode P11→n-electrode N12→conductive film 685→p-n wiring PN2. Similarly, the current from the p-electrode P12 to the n-wiring N27 may flow through the path of p-electrode P12→n-electrode N15→n-wiring N27, or through the path of p-electrode P10→n-electrode N14→conductive film 686→n-wiring N27.

[0491] According to this, similarly to the seventh embodiment, the wiring for connecting the plurality of semiconductor laser elements 118 in series can be shared between the semiconductor laser array element 108 and the base 21. Therefore, the structure can be simplified by eliminating wiring such as wires of the base 21, for example.

[0492] (Embodiment 8) Next, an array-type semiconductor laser device according to embodiment 8 will be described. In the description of the array-type semiconductor laser device according to embodiment 8, differences from the array-type semiconductor laser devices according to embodiments 1 to 7 will be mainly described, and the same components as those in the array-type semiconductor laser devices according to embodiments 1 to 7 will be denoted by the same reference numerals, and the description thereof may be omitted.

[0493] [composition] Fig. 73 is a top view showing an array-type semiconductor laser device 215 according to the eighth embodiment. Fig. 74 is a bottom view showing a semiconductor laser array element 109 according to the eighth embodiment. Fig. 75 is a cross-sectional view showing the array-type semiconductor laser device 215 according to the eighth embodiment, taken along line LXXV-LXXV in Figs. 73 and 74. Fig. 76 is a cross-sectional view including a first conductor of the array-type semiconductor laser device 215 according to the eighth embodiment, taken along line LXXVI-LXXVI in Figs. 73 and 74.

[0494] The array-type semiconductor laser device 215 includes a substrate 10, a semiconductor laser array element 109, and a base 20 (first base).

[0495] The semiconductor laser array element 109 has a plurality of semiconductor laser elements 119. Specifically, the semiconductor laser array element 109 has a semiconductor laser element 129 (first semiconductor laser element), a semiconductor laser element 139 (second semiconductor laser element), and a semiconductor laser element 149 (third semiconductor laser element). The semiconductor laser array element 109 also includes, in order from the positive side of the X-axis, a dummy electrode B, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0496] Specifically, the semiconductor laser element 129 includes an n-electrode N10, a p-electrode P10, and an n-electrode N11. The semiconductor laser element 139 includes an n-electrode N12, a p-electrode P11, and an n-electrode N13. The semiconductor laser element 149 includes an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0497] When the semiconductor laser element 129, the semiconductor laser element 139, and the semiconductor laser element 149 are described in common, they are also simply referred to as the semiconductor laser element 119.

[0498] The semiconductor laser array element 109 has the same configuration as the semiconductor laser array element 100, and further includes a dummy portion 160, conductive films 687-689, insulating films 928-930, and protective films 968-970.

[0499] The dummy portion 160 is formed alongside the multiple semiconductor laser elements 119, and is an electrode connected to p-wiring P20 which is a pattern wiring formed on the second surface 50 of the base 20.

[0500] The conductive films 687 to 689 are conductive films. The conductive films 687 to 689 are formed on the first surface 40 of the semiconductor laser array element 109. The conductive films 687 to 689 are electrically connected to electrodes of the semiconductor laser array element 109.

[0501] For example, the conductive film 687 is electrically connected to the dummy electrode B and the p-electrode P10. Also, for example, the conductive film 688 is electrically connected to the n-electrode N11 and the p-electrode P11. Also, for example, the conductive film 689 is electrically connected to the n-electrode N13 and the p-electrode P12.

[0502] Since the conductive films 687 to 689 connect the adjacent semiconductor laser elements 119 in series, the wiring can be simplified.

[0503] The insulating films 928 to 930 are insulating films for electrically insulating the plurality of electrodes of the semiconductor laser array element 109 from the conductive films 687 to 689.

[0504] For example, the insulating film 928 is located between the n-electrode N10 and the conductive film 687, and electrically insulates the n-electrode N10 from the conductive film 687. Specifically, below the n-electrode N10, the conductive film 687 is formed with the insulating film 928 interposed therebetween.

[0505] The conductive films 687 to 689 are connected to two of the electrodes of the semiconductor laser array element 109 approximately at the center of the electrodes in the Y-axis direction.

[0506] Furthermore, for example, the insulating film 929 is located between the n-electrode N12 and the conductive film 688, and electrically insulates the n-electrode N12 from the conductive film 688. Specifically, below the n-electrode N12, the conductive film 688 is formed with the insulating film 929 interposed therebetween.

[0507] Furthermore, for example, the insulating film 930 is located between the n-electrode N14 and the conductive film 689, and electrically insulates the n-electrode N14 from the conductive film 689. Specifically, below the n-electrode N14, the conductive film 689 is formed with the insulating film 930 interposed therebetween.

[0508] The protective films 968 to 970 are insulating films for electrically insulating the conductive films 687 to 689 from the multiple wirings (the n-wiring N22, the n-wiring N21, and the n-wiring N20) via the connection layer 370.

[0509] For example, the protective film 968 is located between the conductive film 687 and the connection layer 370 on the n-wiring N20, and electrically insulates the conductive film 687 from the n-wiring N20.

[0510] Furthermore, for example, the protective film 969 is located between the conductive film 688 and the connection layer 370 on the n-wiring N21, and electrically insulates the conductive film 688 from the n-wiring N21.

[0511] Furthermore, for example, the protective film 970 is located between the conductive film 689 and the connection layer 370 on the n-wiring N22, and electrically insulates the conductive film 689 from the n-wiring N22.

[0512] As shown in FIG. 74, when viewed from the bottom of the semiconductor laser array element 109, the n-electrode N11 is covered with the wiring electrode 360, has the same shape as the wiring electrode 360, and is electrically connected to the wiring electrode 360.

[0513] The conductive film 688 is composed of a conductive film 688b that covers the p-electrode P11 and is electrically connected to the p-electrode P11, and a conductive film 688a that connects the wiring electrode 360 ​​that covers the N-electrode N11 to the conductive film 688b.

[0514] The conductive film 687 includes a conductive film 687b that covers the p-electrode P10 and is electrically connected to the p-electrode P10, a conductive film 687c that covers the dummy electrode B and is electrically connected to the dummy, and a conductive film 687a that connects the conductive film 687b and the conductive film 687c.

[0515] The n-electrode N10 is composed of a part N10a that is covered by and electrically connected to the wiring electrode 360 ​​and has the same shape as the wiring electrode 360, a part N10c that is covered by and electrically connected to the wiring electrode 360 ​​and has the same shape as the wiring electrode 360, and a part N10b that connects the part N10a and the part N10c. In addition, the part of the lower surface of the semiconductor laser array element 109 where the conductive film is not exposed is covered with a protective film 350. The shape of the dummy electrode B is the same as that of the conductive film 687c.

[0516] In FIG. 76, in the portion where the conductive film 687a and the n-electrode N10b are laminated, the N-electrode N10b, the insulating film 340, the conductive film 687a, and the protective film 968 are formed in this order from the one conductivity type semiconductor layer 300 side.

[0517] As shown in FIG. 4, conductive pattern wirings (p wirings P20, P21, P22, P23 and n wirings N20, N21, N22) are formed on the base 20.

[0518] In addition, the central portion N20c of the n-wiring N20, the central portion N21c of the n-wiring N21, and the central portion N22c of the n-wiring N22 are exposed from the rear end of the semiconductor laser array element 109 in the Y-axis direction (in this embodiment, the end portion on the negative side of the Y-axis).

[0519] With the above configuration, for example, the flow of electricity in array-type semiconductor laser device 215 starts with p-wiring P20, which is the anode electrode, and goes as follows: p-wiring P20 → dummy electrode B → conductive film 687 → p-electrode P10 → n-electrodes N10, N11 → conductive film 688 → p-electrode P11 → n-electrodes N12, N13 → conductive film 689 → p-electrode P12 → n-electrodes N14, N15 → n-wiring N22, which is the cathode electrode.

[0520] The current from the p-electrode P10 to the conductive film 688 may flow through the path of p-electrode P10 → n-electrode N11 → conductive film 688, or through the path of p-electrode P10 → n-electrode N10 → n-wire N20 → conductive film 688. Similarly, the current from the p-electrode P11 to the conductive film 689 may flow through the path of p-electrode P11 → n-electrode N13 → conductive film 689, or through the path of p-electrode P11 → n-electrode N12 → n-wire N21 → conductive film 689. Similarly, the current from the p-electrode P12 to the n-wire N22 may flow through the path of p-electrode P12 → n-electrode N15 → n-wire N22, or through the path of p-electrode P10 → n-electrode N14 → n-wire N22.

[0521] According to this, the wiring for connecting the semiconductor laser elements 119 in series can be shared between the semiconductor laser array element 109 and the base 20. Therefore, the structure can be simplified by eliminating wiring such as wires on the base 20, for example.

[0522] [Variations] Next, a description will be given of modified examples of the array-type semiconductor laser device according to the eighth embodiment. Note that in the modified examples described below, differences from the respective components of the array-type semiconductor laser device according to the eighth embodiment will be mainly described, and descriptions of the same components may be simplified or omitted.

[0523] Fig. 77 is a bottom view showing a semiconductor laser array element 100A according to a modification of the eighth embodiment. Fig. 78 is a cross-sectional view showing the semiconductor laser array element 100A according to a modification of the eighth embodiment, taken along line LXXVIII-LXXVIII in Fig. 77. Fig. 79 is a cross-sectional view showing the semiconductor laser array element 100A according to a modification of the eighth embodiment, taken along line LXXIX-LXXIX in Fig. 77.

[0524] Although not shown, the semiconductor laser array element 100A is mounted on the base 20 in the same manner as the semiconductor laser array element 109.

[0525] The semiconductor laser array element 100A has a plurality of semiconductor laser elements 110A. Specifically, the semiconductor laser array element 100A has a semiconductor laser element 120A (first semiconductor laser element), a semiconductor laser element 130A (second semiconductor laser element), and a semiconductor laser element 140A (third semiconductor laser element). The semiconductor laser array element 100A also includes, in order from the positive X-axis direction, an n-electrode N10, a p-electrode P10, an n-electrode N11, an n-electrode N12, a p-electrode P11, an n-electrode N13, an n-electrode N14, a p-electrode P12, and an n-electrode N15. The semiconductor laser element 120A comprises an n-electrode N10, a p-electrode P10, and an n-electrode N11, the semiconductor laser element 130A comprises an n-electrode N12, a p-electrode P11, and an n-electrode N13, and the semiconductor laser element 140A comprises an n-electrode N14, a p-electrode P12, and an n-electrode N15.

[0526] When the semiconductor laser element 120A, the semiconductor laser element 130A, and the semiconductor laser element 140A are described in common, they are also simply referred to as the semiconductor laser element 110A.

[0527] The semiconductor laser array element 100A has, in addition to the configuration of the semiconductor laser array element 100, a dummy portion 160, conductive films 690 to 692, insulating films 931 to 933, and protective films 971 to 973.

[0528] The dummy portion 160 is formed alongside the multiple semiconductor laser elements 110A.

[0529] The conductive films 690 to 692 are conductive films. The conductive films 690 to 692 are formed on the first surface 40 of the semiconductor laser array element 100A. The conductive films 690 to 692 are electrically connected to electrodes of the semiconductor laser array element 100A.

[0530] For example, the conductive film 690 is electrically connected to the dummy electrode B and the p-electrode P10. Also, for example, the conductive film 691 is electrically connected to the n-electrode N11 and the p-electrode P11. Also, for example, the conductive film 692 is electrically connected to the n-electrode N13 and the p-electrode P12.

[0531] As in the eighth embodiment, in this modification, the conductive films 690 to 692 connect the adjacent semiconductor laser elements 110A in series, so that the wiring can be simplified.

[0532] In this modification, the conductive films 690 to 692 are connected to two of the electrodes of the semiconductor laser device 110A at the ends of the electrodes in the Y-axis direction.

[0533] In this way, the layout of the conductive films connected to the electrodes of the semiconductor laser element is not particularly limited.

[0534] The insulating films 931 to 933 are insulating films for electrically insulating the conductive films 690 to 692 from a plurality of electrodes included in the semiconductor laser array element 100A.

[0535] For example, the insulating film 931 is located between the n-electrode N10 and the conductive film 690, and electrically insulates the n-electrode N10 from the conductive film 690. Specifically, below the n-electrode N10, the conductive film 690 is formed with the insulating film 931 interposed therebetween.

[0536] Furthermore, for example, the insulating film 932 is located between the n-electrode N12 and the conductive film 691, and electrically insulates the n-electrode N12 from the conductive film 691. Specifically, the conductive film 691 is formed below the n-electrode N12 with the insulating film 932 interposed therebetween.

[0537] Furthermore, for example, the insulating film 933 is located between the n-electrode N14 and the conductive film 692, and electrically insulates the n-electrode N14 from the conductive film 692. Specifically, below the n-electrode N14, the conductive film 692 is formed with the insulating film 933 interposed therebetween.

[0538] The protective films 971 to 973 are insulating films for electrically insulating the conductive films 690 to 692 from the multiple wirings (the n-wiring N22, the n-wiring N21, and the n-wiring N20) via the connection layer 370.

[0539] For example, the protective film 971 is located between the conductive film 690 and the connection layer 370 on the n-wiring N20, and electrically insulates the conductive film 690 from the n-wiring N20.

[0540] Furthermore, for example, the protective film 972 is located between the conductive film 691 and the connection layer 370 on the n-wiring N21, and electrically insulates the conductive film 691 from the n-wiring N21.

[0541] Furthermore, for example, the protective film 973 is located between the conductive film 692 and the connection layer 370 on the n-wiring N22, and electrically insulates the conductive film 692 from the n-wiring N22.

[0542] As shown in FIG. 77, when viewed from the bottom of the semiconductor laser array device 100A, the n-electrode N11 is covered with the wiring electrode 360, has the same shape as the wiring electrode 360, and is electrically connected to the wiring electrode 360.

[0543] The conductive film 691 is composed of a conductive film 691b that covers the p-electrode P11 and is electrically connected to the p-electrode P11, and a conductive film 691a that connects the wiring electrode 360 ​​that covers the N-electrode N11 to the conductive film 691b.

[0544] The conductive film 690 includes a conductive film 690b that covers the p-electrode P10 and is electrically connected to the p-electrode P10, a conductive film 690c that covers the dummy electrode B and is electrically connected to the dummy, and a conductive film 690a that connects the conductive film 690b and the conductive film 690c.

[0545] The n-electrode N10 is covered with and electrically connected to the wiring electrode 360, and is made up of a portion N10a having the same shape as the wiring electrode 360, and a portion N10b connected to the portion N10a.

[0546] Moreover, the portion of the lower surface of the semiconductor laser array element 100A where the conductive film is not exposed is covered with a protective film 350. The shape of the dummy electrode B is the same as that of the conductive film 690c.

[0547] With the above configuration, for example, the flow of electricity in the semiconductor laser array element 100A starts with the p-wiring P20, which is the anode electrode, and goes as follows: p-wiring P20 → dummy electrode B → conductive film 690 → p-electrode P10 → n-electrodes N10, N11 → conductive film 691 → p-electrode P11 → n-electrodes N12, N13 → conductive film 692 → p-electrode P12 → n-electrodes N14, N15 → n-wiring N22, which is the cathode electrode.

[0548] The current from the p-electrode P10 to the conductive film 691 may flow through the path of p-electrode P10 → n-electrode N11 → conductive film 691, or through the path of p-electrode P10 → n-electrode N10 → n-wire N20 → conductive film 691. Similarly, the current from the p-electrode P11 to the conductive film 692 may flow through the path of p-electrode P11 → n-electrode N13 → conductive film 692, or through the path of p-electrode P11 → n-electrode N12 → n-wire N21 → conductive film 692. Similarly, the current from the p-electrode P12 to the n-wire N22 may flow through the path of p-electrode P12 → n-electrode N15 → n-wire N22, or through the path of p-electrode P10 → n-electrode N14 → n-wire N22.

[0549] According to this, similarly to the eighth embodiment, the wiring for connecting the plurality of semiconductor laser elements 110A in series can be shared between the semiconductor laser array element 100A and the base 20. Therefore, the structure can be simplified by eliminating wiring such as wires of the base 20, for example.

[0550] (Other embodiments) Although the array-type semiconductor laser device according to the present disclosure has been described above based on each embodiment and each modified example, the present disclosure is not limited to these embodiments and modified examples. As long as it does not deviate from the spirit of the present disclosure, various modifications conceived by a person skilled in the art to each embodiment and modified example, or a form constructed by combining components in different embodiments, may also be included within the scope of one or more aspects.

[0551] For example, the substrate may be an insulating substrate such as n-GaAs, n-GaN, or sapphire, or an insulating substrate made of a nitride-based semiconductor.

[0552] For example, the n-type semiconductor layer may be made of n-GaAs, n-AlGaInP, n-AlGaAs, n-GaInP, n-AlGaN, n-GaN, or the like.

[0553] For example, the active layer is a layer consisting of an undoped barrier layer and an undoped well layer. The active layer can be made of AlGaAs, InGaAs, GaAsP, GaAs, InGaN, GaN, or the like.

[0554] For example, the p-type semiconductor layer may be made of p-AlGaAs, p-AlGaInP, p-GaInP, p-AlGaN, p-GaN, or the like. [Industrial Applicability]

[0555] An array-type semiconductor laser device according to the present disclosure can be applied, for example, to a light source of a laser processing device that processes a member using laser light. [Explanation of symbols]

[0556] 10, 12 Board 20~30 units 40 Page 1 50 Side 2 60 Page 3 70 Page 4 80 Page 5 100~109, 100A Semiconductor laser array element 110, 112-119, 110A, 120, 112-129, 120A, 130, 132-139, 130A, 140, 142-149, 140A Semiconductor laser element 150, 151, 153 recess 152 Opening 160 Dummy part 200~215 Array type semiconductor laser device 220, 223, 224, 226, 227, 228 Submount 300~302 Single conductive type semiconductor layer 310~312 Active layer 320~322 Other conductive semiconductor layers 330~332 Waveguide 340~346, 610~612, 904, 910~933 Insulating film 350~357, 840~842, 950~973 Protective film 360 wiring electrode 370 Connection Layer 370a Connection area 400, 401 Metal film 500~542, 560~566 via 600, 601, 602 Connecting membrane 620~641, 660~692, 663b, 668a, 668b, 668d, 669a, 669b, 669c, 670a, 670b, 671b , 674a, 674b, 674c, 678a, 679a, 679b, 679c, 679d, 680a, 680b, 680c, 680d, 680e conductive film 710 Part 1 720 Part 2 730 Part 3 740 Part 4 810 Barrier Layer 860 Heatsink 870 Connection 871 Metal layer 872 Barrier metal layer 873, 883, 891, 902 Solder layer 874, 892 Soldering undercoat 875, 884, 893 Top conductive layer 876, 881, 894, 898, 900 Base layer 880, 880a, 880b bonding layer 882, 899, 901 Bottom conductive layer 896 Via Underlayer 897 Metal Plug 903 Top metal layer A1, A2 wiring B Dummy electrode L1~L6, L8 length L7 width N10~N15 n electrode Part of N11a, N11b, N11c, N14a, N14b, N14c, N14d, P10a, P10b, P10c, P12a, P12b, P12c, P12d n-wiring of N21 to N40 p-electrodes of P10 to P12 p-wiring of P20 to P31 pn-wiring of PN1 to PN4 Wires of W1, W2, W3, W4, W5, W6, W7, W8, W9, W11, W12, W13, W14, W15 Straight parts of N20a, N20b, N21a, N21b, N22a, N22b, N34a, N34c, P24a, P24b, P28a, P28b, P28c, PN1a, PN1b, PN2a, PN2b, PN3a, PN3b, PN3c, PN3e, PN4a, PN4b, PN4c, PN4e Central parts of N20c, N21c, N22c, P24c, PN1c, PN2c Connection parts of N34b, P28b, PN3b, PN4b One ends of P21a, P22a, P23a

Claims

1. 1. An array-type semiconductor laser device comprising a semiconductor laser array element having a first semiconductor laser element and a second semiconductor laser element formed on a substrate, the first semiconductor laser element has, from the substrate side, a first one-conductivity type semiconductor layer and a first other-conductivity type semiconductor layer; the second semiconductor laser element has, from the substrate side, a second one-conductivity type semiconductor layer and a second other-conductivity type semiconductor layer; the first semiconductor laser element has a first waveguide extending in a first direction in a substrate surface, the second semiconductor laser element is disposed in a second direction in the substrate plane perpendicular to the first direction with respect to the first semiconductor laser element, the second semiconductor laser element has a second waveguide extending in the first direction, the first semiconductor laser element has a first electrode formed on the first other conductivity type semiconductor layer on a first surface opposite to the substrate; the second semiconductor laser element has a second electrode formed on the second other conductivity type semiconductor layer on the first surface; In the first surface, the first semiconductor laser element has a third electrode formed on the first one-conductivity type semiconductor layer and disposed between the first electrode and the second electrode; a fourth electrode formed on the first one-conductivity type semiconductor layer and disposed on the opposite side to the third electrode; In the first surface, the second semiconductor laser element has a fifth electrode formed on the second one-conductivity type semiconductor layer and disposed between the third electrode and the second electrode; a sixth electrode formed on the second one-conductivity type semiconductor layer and disposed on the opposite side to the fifth electrode; The array type semiconductor laser device comprises: a first conductor electrically connecting the second electrode and the third electrode; a second conductor electrically connecting the fifth electrode and the sixth electrode; The first surface side of the substrate is bonded to a second surface of a first base, The first conductor is formed on the first base. Array type semiconductor laser device.

2. At least one of the first and second semiconductor laser elements oscillates in multiple transverse modes.

2. The array-type semiconductor laser device according to claim 1.

3. the first one-conductivity type semiconductor layer and the second one-conductivity type semiconductor layer include an n-type semiconductor layer, The first other-conductivity-type semiconductor layer and the second other-conductivity-type semiconductor layer include a p-type semiconductor layer.

3. The array type semiconductor laser device according to claim 1 or 2.

4. The substrate has insulating properties.

4. The array type semiconductor laser device according to claim 1, wherein the first and second electrodes are arranged in a first direction.

5. Further, a barrier layer is provided between the substrate and the first one-conductivity type semiconductor layer and between the substrate and the second one-conductivity type semiconductor layer.

4. The array type semiconductor laser device according to claim 1, wherein the first and second electrodes are arranged in a first direction.

6. Further, a recess is provided between the first semiconductor laser element and the second semiconductor laser element.

6. The array type semiconductor laser device according to claim 1, wherein the first and second electrodes are arranged in a first direction.

7. The recess reaches the substrate.

7. The array type semiconductor laser device according to claim 6.

8. The recess is formed such that the width in the second direction increases from the bottom of the recess toward the opening of the recess.

8. The array type semiconductor laser device according to claim 6 or 7.

9. a recess between the first semiconductor laser element and the second semiconductor laser element, The first conductor is formed in the recess.

7. The array type semiconductor laser device according to claim 6.

10. The second conductor is formed on the first surface.

2. The array-type semiconductor laser device according to claim 1.

11. The second conductor is formed on the second electrode via a second insulating film.

11. The array-type semiconductor laser device according to claim 10.

12. The second conductor is formed in a plurality of pieces in the first direction.

11. The array-type semiconductor laser device according to claim 9 or 10.

13. The first conductor is a first conductive film formed on the second surface.

2. The array-type semiconductor laser device according to claim 1.

14. The first conductive film is exposed from a rear end of the second semiconductor laser element in the first direction.

14. The array-type semiconductor laser device according to claim 13.

15. The first base includes: a third surface located opposite the second surface; a first through hole penetrating from the second surface to the third surface; a second through hole penetrating from the second surface to the third surface, the first conductor includes a third conductor, a fourth conductor, and a third conductive film; the third conductive film is formed on the third surface, the third conductor is formed in the first through hole and electrically connects the second electrode and the third conductive film; The fourth conductor is formed in the second through hole and electrically connects the third electrode and the third conductive film.

2. The array-type semiconductor laser device according to claim 1.

16. The third conductor is formed in a plurality of pieces in the first direction, The fourth conductor is formed in a plurality of pieces in the first direction.

16. The array-type semiconductor laser device according to claim 15.

17. The first base includes: a fifth conductor located inside the first base; a third through hole penetrating from the second surface to the fifth conductor; a fourth through hole penetrating from the second surface to the fifth conductor; the first conductor includes a third conductor, a fourth conductor, and the fifth conductor; the third conductor is formed in the third through hole and electrically connects the second electrode and the fifth conductor; The fourth conductor is formed in the fourth through hole and electrically connects the third electrode and the fifth conductor.

2. The array-type semiconductor laser device according to claim 1.

18. The first conductive film is a first portion exposed from the first semiconductor laser element and the second semiconductor laser element and electrically connected to the second electrode; a second portion exposed from the first semiconductor laser element and the second semiconductor laser element and electrically connected to the third electrode; The array-type semiconductor laser device further includes a first metal line electrically connecting the first portion and the second portion.

14. The array-type semiconductor laser device according to claim 13.

19. The second conductor is formed on the first base.

2. The array-type semiconductor laser device according to claim 1.

20. The second conductor is a second conductive film formed on the second surface.

20. The array-type semiconductor laser device according to claim 19.

21. The second conductive film is exposed from a rear end of the second semiconductor laser element in the first direction.

21. The array-type semiconductor laser device according to claim 20.

22. The first base includes: a third surface located opposite the second surface; a fifth through hole penetrating from the second surface to the third surface; a sixth through hole penetrating from the second surface to the third surface, the second conductor includes a sixth conductor, a seventh conductor, and a fourth conductive film; the fourth conductive film is formed on the third surface, the sixth conductor is formed in the fifth through hole and electrically connects the fifth electrode and the fourth conductive film; The seventh conductor is formed in the sixth through hole and electrically connects the sixth electrode and the fourth conductive film.

20. The array-type semiconductor laser device according to claim 19.

23. The sixth conductor is formed in a plurality of pieces in the first direction, The seventh conductor is formed in a plurality of pieces in the first direction.

23. The array-type semiconductor laser device according to claim 22.

24. The first base includes: an eighth conductor located inside the first base; a seventh through hole penetrating from the second surface to the eighth conductor; an eighth through hole penetrating from the second surface to the eighth conductor; the second conductor includes a ninth conductor, a tenth conductor, and the eighth conductor; the ninth conductor is formed in the seventh through hole and electrically connects the fifth electrode and the eighth conductor; The tenth conductor is formed in the eighth through hole and electrically connects the sixth electrode and the eighth conductor.

20. The array-type semiconductor laser device according to claim 19.

25. The second conductive film is a third portion exposed from the first semiconductor laser element and the second semiconductor laser element and electrically connected to the fifth electrode; a fourth portion that is exposed from the first semiconductor laser element and the second semiconductor laser element and is electrically connected to the sixth electrode; The array-type semiconductor laser device further includes a second metal line electrically connecting the third portion and the fourth portion.

21. The array-type semiconductor laser device according to claim 20.

26. the substrate has a fourth surface located opposite the first surface; the second semiconductor laser element has a ninth through hole penetrating from the first surface to the fourth surface and a tenth through hole penetrating from the first surface to the fourth surface, the second conductor includes an eleventh conductor, a twelfth conductor, and a fifth conductive film; the fifth conductive film is formed on the fourth surface, the eleventh conductor is formed in the ninth through hole and electrically connects the fifth electrode and the fifth conductive film; The twelfth conductor is formed in the tenth through hole and electrically connects the sixth electrode and the fifth conductive film.

2. The array-type semiconductor laser device according to claim 1.

27. The first base has a third surface located on an opposite side to the second surface, a first through hole penetrating from the second surface to the third surface; a second through hole penetrating from the second surface to the third surface, the first conductor includes a third conductor, a fourth conductor, and a third conductive film; the third conductive film is formed on the third surface, the third conductor is formed in the first through hole and electrically connects the second electrode and the third conductive film; the fourth conductor is formed in the second through hole and electrically connects the third electrode and the third conductive film; the first base further has a fifth through hole penetrating from the second surface to the third surface and a sixth through hole penetrating from the second surface to the third surface, the second conductor includes a sixth conductor, a seventh conductor, and a fourth conductive film; the fourth conductive film is formed on the third surface, the sixth conductor is formed in the fifth through hole and electrically connects the fifth electrode and the fourth conductive film; The seventh conductor is formed in the sixth through hole and electrically connects the sixth electrode and the fourth conductive film.

2. The array-type semiconductor laser device according to claim 1.

28. The third conductor is formed in a plurality of pieces in the first direction, The fourth conductor is formed in a plurality of pieces in the first direction, The sixth conductor is formed in a plurality of pieces in the first direction, The seventh conductor is formed in a plurality of pieces in the first direction, a plurality of the third conductive films are formed in the first direction; a plurality of the fourth conductive films are formed in the first direction; The third conductive film and the fourth conductive film are alternately formed in the first direction.

28. The array-type semiconductor laser device according to claim 27.

29. the third surface is joined to a fifth surface of the second base; A first metal film is formed on the fifth surface so as to face the third conductive film, and a second metal film is formed on the fifth surface so as to face the fourth conductive film.

29. The array-type semiconductor laser device according to claim 27 or 28.

30. The semiconductor device further includes a first terminal connected to the first electrode.

30. The array type semiconductor laser device according to claim 1,

31. Further, a second terminal connected to the fifth electrode.

31. The array-type semiconductor laser device according to claim 1,

32. The first conductor is a first conductive film formed on the second surface, the second conductive film has a linear portion at one end of the second conductive film connected to the sixth electrode, a linear portion at the other end of the second conductive film connected to the fifth electrode, and a central portion; the first conductive film has a first portion connected to the second electrode; The first portion is sandwiched between the straight portion at the one end and the straight portion at the other end, the first conductive film has a second portion connected to the third electrode; one end of the second portion is exposed from a rear end of the first semiconductor laser element in the first direction, The central portion and one end of the first portion are exposed from a rear end of the second semiconductor laser element in the first direction.

22. The array-type semiconductor laser device according to claim 21.

33. The second conductive film is U-shaped when viewed from above.

22. The array-type semiconductor laser device according to claim 21.

34. The first conductive film has a second portion connected to the third electrode, The first conductor has a metal line connecting the first portion and the second portion.

33. The array-type semiconductor laser device according to claim 32.

35. The first conductor is a first conductive film formed on the second surface, the first conductive film has a linear portion at one end of the first conductive film connected to the second electrode, a linear portion at the other end of the first conductive film connected to the third electrode, and a central portion; the second conductive film has a first portion connected to the fifth electrode, The first portion is sandwiched between the straight portion at one end and the straight portion at the other end. the second conductive film has a second portion connected to the sixth electrode, one end of the first portion and one end of the second portion are exposed from a rear end of the first semiconductor laser element in the first direction; The central portion is exposed from rear ends of the first semiconductor laser element and the second semiconductor laser element in the first direction.

22. The array-type semiconductor laser device according to claim 21.

36. The first conductor is a first conductive film formed on the second surface, The first conductive film is U-shaped in a top view.

22. The array-type semiconductor laser device according to claim 21.

37. The second conductor has a metal wire connecting the first portion and the second portion.

36. The array-type semiconductor laser device according to claim 35.

38. The second conductive film has a connecting film connecting the first portion and the second portion, The connection film is disposed above the second conductive film via an insulating film.

36. The array-type semiconductor laser device according to claim 35.

39. The first conductor is a first conductive film formed on the second surface, the first conductive film has a p-wiring connected to the second electrode and a first n-wiring connected to the third electrode, the second conductive film has a second n-wiring connected to the fifth electrode and a third n-wiring connected to the sixth electrode, an end portion of the first n-wiring connected to the third electrode is exposed from a rear end of the first semiconductor laser element in the first direction; an end of the p-wiring connected to the second electrode, an end of the second n-wiring connected to the fifth electrode, and an end of the third n-wiring connected to the sixth electrode are exposed from a rear end of the second semiconductor laser element in the first direction, the first conductor has a first metal line connecting the p-wiring and the first n-wiring, The second conductor has a first metal line connecting the second n-wiring and the third n-wiring.

22. The array-type semiconductor laser device according to claim 21.

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