Dynamic sheath control using edge ring lift

Abstract

To provide a pedestal assembly including a pedestal for supporting a substrate.SOLUTION: In a pedestal assembly, a central shaft 510 places a pedestal at a certain height. A ring 430 is placed along an outer periphery of the pedestal, and a ring adjuster subassembly includes an adjuster flange 542 around a middle section of the central shaft, a sleeve 469 extending from the adjuster flange to an adjuster plate 440 disposed under the pedestal, and a plurality of ring adjuster pins 445a, 445b, ... extending vertically from the adjuster plate. Each of the ring adjuster pins is placed in an outside area 565 of the pedestal on the adjuster plate and is in contact with an edge undersurface of the ring. The adjuster flange is coupled to three dynamic sheath control (DSC) adjuster actuators for defining an elevation and tilt of the ring relative to a top surface of the pedestal.SELECTED DRAWING: Figure 5C

Description

[Technical field]

[0001] The present embodiments relate to semiconductor substrate processing equipment tools, and more particularly to dynamic sheath control configured for edge ring lift. [Background technology]

[0002] Improving film uniformity is important in plasma-enhanced chemical vapor deposition (PECVD) and plasma-enhanced atomic layer deposition (ALD) techniques. Chamber systems performing PECVD and ALD processes can introduce non-uniformity from a variety of sources. In particular, multi-station modules performing PECVD and ALD feature large open reactors that can contribute to circumferential non-uniformity and edge drop effects. Non-uniformity also exists in single-station modules. For example, standard pedestal configurations do not provide the desired flow profile and / or material conditions near the edge of the wafer during plasma processing. Current configurations using PECVD hardware near the wafer can result in lower or higher edge deposition profiles, depending on recipe conditions. As dies are placed increasingly closer to the wafer edge, the numerical contribution of this circumferential non-uniformity to the overall non-uniformity becomes larger. Despite best efforts to minimize damage and / or non-uniform deposition profiles, conventional PECVD and plasma-enhanced ALD schemes still require improvement.

[0003] In particular, standard pedestal configurations do not provide the desired flow profile and / or material conditions near the edge of the wafer during plasma processing. Current configurations using PECVD hardware near the wafer can result in lower edge deposition profiles. Furthermore, uniformity degrades over time, primarily at the wafer edge (where it is most sensitive to flow profile and local conditions), creating a need to maintain consistent edge conditions.

[0004] Furthermore, a single carrier / focus ring cannot accommodate a wide variety of deposition films. Even if optimal edge profiles could be produced for various combinations of carrier / focus ring and wafer, carrier / focus ring exchange cannot be performed automatically due to other constraints on the platform (throttle valves, load locks, etc.). Also, manual exchange of carriers based on film type is not feasible since product uptime is not guaranteed (chamber cool, chamber open, exchange, chamber close, requalification).

[0005] The description of the background art provided herein is intended to provide a general background to the present disclosure, and the work of the inventors named herein, to the extent described in this background art, together with aspects of the description that would not ordinarily be considered prior art at the time of filing, are not admitted, expressly or impliedly, as prior art to the present disclosure.

[0006] It is in this context that embodiments of the present disclosure arise. Summary of the Invention

[0007] The present embodiments are directed to solving one or more problems found in the related art, and in particular to performing semiconductor processing that includes adjusting the deposition profile near the edge of the wafer by raising and / or lowering an edge ring of a PECVD deposition pedestal to adjust the relative capacitance that an RF field experiences between the wafers or through the edge ring. Below, several inventive embodiments of the present disclosure are described.

[0008] A deposition chamber (e.g., PECVD, ALD, etc.) houses one or more stations with a radio frequency (RF) source, a wafer, and a grounded surface facing the RF source. An edge ring (e.g., focus ring or carrier ring) is used to shape the deposition profile near the edge of the wafer, which is disposed on a pedestal in the station. In an embodiment of the present disclosure, dynamic sheath control (DSC) provides edge lift of the edge (e.g., focus / carrier) ring on the deposition pedestal to adjust the relative capacitance experienced by the RF field in the flow path through the wafer and the flow path through the edge ring.

[0009] An embodiment of the disclosure includes a pedestal assembly of a processing chamber for depositing a film on a wafer. The pedestal assembly includes a pedestal for supporting a substrate. The pedestal has a central shaft that positions the pedestal at a height during operation. The pedestal assembly includes a ring configured to be positioned along an outer periphery of the pedestal. The pedestal assembly includes a ring adjuster subassembly. The ring adjuster subassembly includes an adjuster flange disposed about a central portion of the central shaft. The ring adjuster subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed below the pedestal. The ring adjuster subassembly includes a plurality of ring adjuster pins connected to the adjuster plate and extending perpendicularly from the adjuster plate. Each of the plurality of ring adjuster pins is at a corresponding location on the adjuster plate that is adjacent and outward of a diameter of the pedestal. The plurality of ring adjuster pins are configured to contact an underside of an edge of the ring. The adjuster flange is coupled to at least three adjuster actuators for defining the height and tilt of the ring relative to the top surface of the pedestal.

[0010] Another embodiment of the present disclosure includes another pedestal assembly of a processing chamber for depositing a film on a wafer. The pedestal assembly includes a pedestal for supporting a substrate. The pedestal has a central shaft that positions the pedestal at a height during operation. The pedestal assembly includes a ring configured to be positioned along an outer periphery of the pedestal. The pedestal assembly includes a ring adjuster subassembly. The ring adjuster subassembly includes a lower flange disposed about a lower portion of the central shaft and configured to maintain a vacuum within the central shaft. The ring adjuster subassembly includes a lower bellows connected to the lower flange. The ring adjuster subassembly includes an adjuster flange connected to the lower bellows and disposed about a central portion of the central shaft. The ring adjuster subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed below the pedestal. The ring adjuster subassembly includes an upper bellows connected to the adjuster flange. The ring adjuster subassembly includes an upper flange connected to the upper bellows. The ring adjuster subassembly includes a plurality of ring adjuster pins connected to the adjuster plate and extending perpendicularly therefrom. Each of the plurality of ring adjuster pins is at a corresponding location on the adjuster plate that is adjacent and outwardly of a diameter of the pedestal. The plurality of ring adjuster pins are configured to contact an edge underside of the ring. The adjuster flange is coupled to at least three adjuster actuators to define a height and tilt of the ring relative to an upper surface of the pedestal.

[0011] Yet another embodiment of the present disclosure includes another pedestal assembly of a processing chamber for depositing a film on a wafer. The pedestal assembly includes a pedestal for supporting a substrate. The pedestal has a central shaft that positions the pedestal at a height during operation. The pedestal assembly includes a ring configured to be positioned along an outer periphery of the pedestal and extending outwardly of an outer diameter of the pedestal in a plurality of arms. The pedestal assembly includes a ring adjuster subassembly. The ring adjuster subassembly includes an adjuster flange disposed about a central portion of the central shaft. The ring adjuster subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed below the pedestal. The sleeve is configured for independent vertical movement relative to the central shaft at a plurality of contact points, the plurality of contact points being aligned with the plurality of arms. The ring adjuster subassembly includes a plurality of ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the plurality of ring adjuster pins is at a corresponding location on a corresponding arm of the adjuster plate that is adjacent and outwardly diametrically opposed to the pedestal. The plurality of ring adjuster pins are configured to contact an underside edge surface of the ring. The adjuster flange is coupled to at least three adjuster actuators that are aligned with the plurality of contact points to define the height and tilt of the ring relative to the upper surface of the pedestal.

[0012] Another embodiment of the present disclosure includes a processing chamber for depositing a film on a wafer. The processing chamber includes a pedestal configured to receive the wafer. The pedestal includes a central top surface extending from a central axis of the pedestal to a central top diameter. The pedestal includes an annular surface extending from the central top diameter to an outer diameter of the annular surface. The annular surface is stepped down from the central top surface. The pedestal includes a central shaft extending from the central axis of the pedestal to a shaft diameter corresponding to the shaft outer surface. The central shaft is configured for vertical movement transferred to the pedestal. The processing chamber includes an edge ring disposed adjacent the annular surface and extending from an inner diameter to an outer diameter of the annular surface at a plurality of radial extensions of the edge ring. The processing chamber includes an outer sheath adjacent the shaft outer surface. The outer sheath is configured for independent vertical movement relative to the central shaft at a plurality of contact points of the outer sheath. The plurality of contact points correspond to a plurality of radial extensions of the edge ring. The processing chamber includes a funnel portion connected to the outer sheath. The processing chamber includes a dynamic sheath control (DSC) lift pin plate connected to a funnel portion. The DSC lift pin plate has a number of arms corresponding to a number of contact points on the outer sheath. The processing chamber includes a number of DSC lift pins connected to the DSC lift pin plate at the ends of the arms. The DSC lift pins are configured to contact a number of radial extensions of the edge ring. Independent vertical movement of the outer sheath is transferred to the one or more DSC lift pins through the funnel portion and the one or more arms of the DSC lift pin plate.

[0013] These and other advantages will be recognized by those of ordinary skill in the art upon reading the entire specification and claims. [Brief description of the drawings]

[0014] The embodiments are best understood by reference to the following description taken in conjunction with the accompanying drawings.

[0015] [Figure 1] FIG. 1 illustrates a substrate processing system that can be used to process wafers (eg, to form a film on a wafer).

[0016] [Diagram 2] FIG. 1 illustrates a top view of a multi-station processing tool in which four processing stations are provided, according to one embodiment.

[0017] [Diagram 3] 1 is a schematic diagram illustrating an embodiment of a multi-station processing tool with an entry load lock and an exit load lock, according to one embodiment.

[0018] [Figure 4A] FIG. 1 illustrates a pedestal configured to receive a wafer for a deposition process (such as a PECVD or atomic layer deposition (ALD) process) according to one embodiment of the present disclosure, where the pedestal configuration includes a dynamic sheath control (DSC) system configured to adjust the relative capacitance seen between the flow paths through the wafer or edge ring near the edge of the wafer.

[0019] [Figure 4B] FIG. 4B is a cutaway perspective view of a portion of the pedestal of FIG. 4A illustrating the fit between the edge ring and the pedestal according to one embodiment of the present disclosure.

[0020] [Figure 4C] FIG. 1 is a cutaway view showing the relative capacitance seen between a flow path through a wafer or edge ring disposed on a pedestal near the edge of the wafer disposed on the pedestal according to one embodiment of the present disclosure.

[0021] [Figure 4C-1] FIG. 13 illustrates the total capacitance of the flow path through the edge ring to the pedestal in accordance with one embodiment of the present disclosure.

[0022] [Figure 4C-2]FIG. 1 illustrates the total capacitance of the flow path through the wafer to the pedestal in accordance with one embodiment of the present disclosure.

[0023] [Figure 5A] FIG. 13 is a top view illustrating a pedestal configuration with an edge ring that is a carrier ring and supports dynamic sheath control including independent vertical movement of the contact portion enabled by one or more adjuster actuators connected to one or more contact points at the contact portion in accordance with one embodiment of the present disclosure.

[0024] [Figure 5B] FIG. 1C illustrates a top view of a pedestal configuration with an edge ring that is a focus ring and supports dynamic sheath control including independent vertical movement of the contact portion enabled by one or more adjuster actuators connected to one or more contact points at the contact portion in accordance with one embodiment of the present disclosure.

[0025] [Figure 5C] A cross-sectional view taken along line X--X in FIG. 5A or FIG. 5B of a pedestal configuration with dynamic sheath control to lift a radial portion of a carrier ring for the purpose of adjusting the relative capacitance of the RF flow path through the wafer or carrier ring, according to one embodiment of the present disclosure.

[0026] [Figure 5D-1] FIG. 13 illustrates dimensions of a carrier / focus ring configured to adjust the relative capacitance of an RF flow path through a wafer or the carrier / focus ring when the carrier / focus ring rests on an annular surface in accordance with one embodiment of the disclosure.

[0027] [Figure 5D-2] FIG. 5D-3 illustrates dimensions of the carrier / focus ring of FIG. 5D-1 configured to adjust the relative capacitance of the RF flow path through the wafer or carrier / focus ring when the carrier / focus ring is lifted off the annular surface in accordance with one embodiment of the present disclosure.

[0028] [Figure 5D-3] FIG. 13 illustrates dimensions of a thin carrier / focus ring configured to adjust the relative capacitance of an RF flow path through a wafer or carrier / focus ring when the carrier / focus ring rests on an annular surface in accordance with one embodiment of the present disclosure.

[0029] [Figure 5D-4] FIG. 5D-3 illustrates dimensions of the thin carrier / focus ring of FIG. 5D-3 configured to adjust the relative capacitance of the RF flow path through the wafer or carrier / focus ring when the carrier / focus ring is lifted off the annular surface in accordance with one embodiment of the present disclosure.

[0030] [Figure 6A] FIG. 13 is a cutaway view showing a pedestal assembly with dynamic sheath control to lift a radial portion of a carrier ring to adjust the relative capacitance of the RF flow path through the wafer or carrier ring, according to one embodiment of the present disclosure.

[0031] [Figure 6B] FIG. 13 is an isometric view of a pedestal configuration with dynamic sheath control to lift a radial portion of a carrier ring to adjust the relative capacitance of the RF flow path through the wafer or carrier ring, according to one embodiment of the present disclosure.

[0032] [Figure 6C] 1A is a top view of a multi-station processing tool showing the placement of tabs or radial extensions on a carrier ring such that the tabs do not interfere with the chamber walls when the carrier ring is moved from station to station, according to one embodiment of the present disclosure.

[0033] [Figure 7A] FIG. 1C is a cutaway view illustrating a pedestal configuration with dynamic sheath control to lift a radial portion of the focus ring for the purpose of adjusting the relative capacitance of the RF flow path through the wafer or focus ring in accordance with one embodiment of the present disclosure.

[0034] [Figure 7B] FIG. 1C is an isometric view of a pedestal configuration with dynamic sheath control to lift a radial portion of a focus ring for the purpose of adjusting the relative capacitance of the RF flow path through the wafer or focus ring in accordance with one embodiment of the present disclosure.

[0035] [Figure 8A] FIG. 13 is a cross-sectional view showing the interface between a central shaft of a pedestal and a sheath or sleeve configured for dynamic sheath control to lift a radial portion of an edge ring (e.g., a carrier ring or focus ring) to adjust the relative capacitance of the RF flow path through the wafer or edge ring, in accordance with one embodiment of the present application.

[0036] [Figure 8B] FIG. 13 illustrates relative movement of a central shaft of a pedestal and a sheath or sleeve configured for dynamic sheath control to lift a radial portion of an edge ring (e.g., carrier ring or focus ring) to adjust the relative capacitance of the RF flow path through the wafer or edge ring in accordance with one embodiment of the present disclosure.

[0037] [Figure 9] FIG. 2 shows a control module for controlling the system described above. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0038] Although the following detailed description includes many specific details for purposes of illustration, those skilled in the art will appreciate that many variations and modifications to the following details are within the scope of the disclosure. Accordingly, the aspects of the disclosure described below are set forth without any loss of generality to, and without imposing limitations on, the claims that follow this description.

[0039] In general, various embodiments of the present disclosure describe a system for improving film uniformity during wafer processing (e.g., PECVD and ALD processing) in single-station and multi-station systems. In particular, various embodiments of the present disclosure describe a pedestal assembly that provides adjustment of the relative capacitance of flow paths experienced by an RF field at the edge of a wafer during deposition processing. For example, at the edge of the wafer, one flow path passes through the wafer and a second flow path passes through an edge ring. In particular, the edge ring is raised at one or more points to raise and / or tilt the edge ring relative to the pedestal for the purpose of modifying the deposition profile at the edge of the wafer. Recipe-controlled adjustment of the edge profile, performed by adjusting the relative capacitance at one or more points along the circumferential edge of the wafer, may be made based on a particular recipe or film characteristics.

[0040] Advantages of various embodiments disclosing a pedestal assembly configured for dynamic sheath control to lift a radial portion of an edge ring (e.g., carrier ring or focus ring) include tuning or adjusting the relative capacitance of the RF flow path through the wafer or edge ring to achieve a preferred deposition profile near the edge of the wafer, thereby expanding the available area of ​​the wafer suitable for die formation and increasing the number of dies per wafer. That is, while embodiments of the present disclosure provide recipe-controlled tuning of the edge profile of the wafer, current deposition hardware technology is not configured for recipe-controlled tuning of the edge profile. Other advantages of various embodiments disclosing a pedestal assembly configured for dynamic sheath control to lift a radial portion of an edge ring (e.g., carrier ring or focus ring) include a retrofittable solution that does not require chamber modifications, which can be costly, not timely, or even feasible at some customer sites. In some embodiments, pressure-actuated adjustments utilize space that would otherwise be unused as a retrofit, and provide finer adjustment resolution (e.g., <1 mm travel range) microactuation at a much lower cost (no motors, little electronic control, etc.). In another embodiment, motor-actuated (eg, by a motor with a ball screw) adjustment provides a retrofittable solution offering finer adjustment resolution (eg, >5mm travel range) of micro-actuation.

[0041] With the above general understanding of the various embodiments, examples of the details of the embodiments will be described with reference to the various drawings. Elements and / or components with similar reference numerals in one or more figures are generally intended to have the same configuration and / or function. Furthermore, the figures may not be drawn to scale, but are intended to illustrate and emphasize novel concepts. It is clear that the present embodiment can be practiced without some or all of these specific details. In addition, detailed descriptions of well-known processing operations have been omitted to avoid unnecessarily obscuring the present embodiment.

[0042] FIG. 1 illustrates a reactor system 100 that may be used to deposit a film (such as a film formed in a PECVD or ALD process) on a substrate. These reactors may utilize two or more heaters, and a common terminal configuration may be used in this example reactor to control temperature for uniformity or custom settings. More specifically, FIG. 1 illustrates a substrate processing system 100 that may be used to process a wafer 101. The system includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. A central post is configured to support a pedestal 140, which in one embodiment is a powered electrode. The pedestal 140 is electrically connected to a power supply 104 via a matching network 106. The power supply is controlled by a control module 110 (e.g., a controller). The control module 110 is configured to operate the substrate processing system 100 by executing process input / control 108. The process input / control 108 may comprise a process recipe, such as power levels, timing parameters, process gases, mechanical movement of the wafer 101, etc., to deposit or form a film on the wafer 101, etc.

[0043] The central column (e.g., also known as the central shaft) also includes lift pins (not shown), each of which is actuated by a corresponding lift pin actuation ring 120 as controlled by a lift pin control 122. The lift pins are used to lift the wafer 101 from the pedestal 140 to allow an end effector to lift the wafer, and to lower the wafer 101 after it has been placed by the end effector. The substrate processing system 100 further includes a gas supply manifold 112 connected to process gases 114 (e.g., a gas chemical supply from the facility). Depending on the process to be performed, the control module 110 controls the supply of process gases 114 through the gas supply manifold 112. The selected gas is then flowed to the showerhead 150 and dispersed in a space defined between the showerhead 150 face facing the wafer 101 and the wafer 101 resting on the pedestal 140. In an ALD process, the gas can be a reactant selected for absorption or for reaction with an absorbed reactant.

[0044] Additionally, the process gases may or may not be premixed. Appropriate valving and mass flow control mechanisms may be utilized to ensure that the correct gases are delivered during the deposition and plasma treatment stages of the process. The process gases exit the chamber through an outlet. A vacuum pump (e.g., one or two stage mechanical dry pumps and / or turbomolecular pumps, etc.) draws the process gases and maintains an appropriate low pressure in the reactor by a closed loop controlled flow restriction device such as a throttle valve or pendulum valve.

[0045] Also shown is an edge ring 430 (e.g., carrier ring, focus ring, etc.) that surrounds the outer and / or outer perimeter regions of the pedestal 140. The edge ring 430 is configured to shape the deposition profile near the edge of the wafer 101. The edge ring 430 is configured to rest on an annular ring support area that is stepped down from the central wafer support area of ​​the pedestal 140. The edge ring 430 comprises an outer peripheral side (e.g., outer diameter) of its disk structure and a wafer edge side (e.g., inner diameter) of its disk structure that is closest to where the wafer 101 will rest. The wafer edge side of the carrier ring comprises a number of contact support structures that are configured to lift the wafer 101 when the edge ring 430 (e.g., carrier ring) is lifted by the spider forks 180. Thus, the edge ring 430 (e.g., carrier ring) can be lifted with the wafer 101 and rotated, for example, to another station in a multi-station system. In another embodiment, the chamber is a single station chamber.

[0046] Also shown is a ring adjuster subassembly comprising an adjuster flange (not shown), a sleeve 469, and a number of ring adjuster pins 445. The adjuster pins 445 are connected to the ring adjuster plate 440. One or more adjuster actuators (not shown), controlled by the edge ring adjuster pin control 124, drive the vertical movement of the ring adjuster subassembly and thus the adjuster pins 445. The adjuster pins 445 are used to raise or lower a radial portion of the edge ring 430 to adjust the relative capacitance of the RF flow paths through the wafer or edge ring. In that way, the deposition profile near the edge of the wafer can be adjusted by adjusting the relative capacitance of the flow paths at the edge. Depending on the particular recipe or wafer film characteristics (e.g., which vary between customer wafer types), a preferred edge profile can be achieved, which greatly affects the deposition edge profile. Thus, radial uniformity of the deposition profile, especially near the edge of the wafer, can be achieved.

[0047] 2 is a top view of a multi-station processing tool in which four processing stations are provided. The top view is of the lower chamber portion 102b (e.g., with the upper chamber portion 102a removed for illustration purposes) where the four stations are accessed by spider forks 226. Each spider fork or fork includes first and second arms, each arm being disposed about a portion of each side of the pedestal 140. In this view, the spider forks 226 are drawn with dashed lines to indicate that they are below the edge ring 430 (e.g., carrier ring, focus ring, etc.). The spider forks 226 are configured to utilize the engagement / rotation mechanism 220 to simultaneously lift the edge rings 430 (i.e., from the underside of the edge rings 430) from the stations and then rotate at least one or more stations before lowering the edge rings 430 (where at least one of the edge rings supports a wafer 101) to a next position so that further plasma processing, treatment, and / or film deposition can be performed on each wafer 101.

[0048] 3 is a schematic diagram illustrating an embodiment of a multi-station processing tool 300 with an entry load lock 302 and an exit load lock 304. A robot 306 at atmospheric pressure is configured to transfer substrates from a cassette loaded through a pod 308 into the entry load lock 302 through an atmospheric port 310. The entry load lock 302 is connected to a vacuum source (not shown) such that the entry load lock 302 can be pumped down when the atmospheric port 310 is closed. The entry load lock 302 also includes a chamber transfer port 316 that is coupled to the processing chamber 102b. Thus, when the chamber transfer 316 is opened, another robot (not shown) may transfer the substrate from the entry load lock 302 to the pedestal 140 of the first processing station for processing.

[0049] The illustrated processing chamber 102b includes four processing stations, numbered 1 through 4 in the embodiment shown in Figure 3. In some embodiments, processing chamber 102b may be configured to maintain a low pressure environment such that a substrate may be moved between processing stations using edge ring 430 (e.g., carrier ring 430A) without experiencing a vacuum interruption and / or exposure to air. Each processing station shown in Figure 3 includes a processing station substrate holder (shown as 318 for station 1) and a process gas supply line inlet.

[0050] 3 also illustrates spider forks 226 for moving substrates within processing chamber 102b. Spider forks 226 rotate to allow movement of the wafer between stations. Movement is accomplished by allowing spider forks 226 to lift edge ring 430 (e.g., carrier ring 430A) from the outer bottom surface (thereby lifting the wafer) and rotate the wafer and carrier together to the next station. In one configuration, spider forks 226 are fabricated from a ceramic material to withstand high levels of heating during processing.

[0051] FIG. 4A illustrates a pedestal assembly 400A configured to receive a wafer for deposition processing (such as PECVD and ALD processing). The wafer comprises a central top surface 402 defined by a circular area extending from a central axis 420 of the pedestal to a top diameter 422 that defines an edge of the central top surface 402. The central top surface 402 comprises a plurality of wafer supports 404 defined on the central top surface 402 and configured to support the wafer at a support level above the central top surface. The wafer support level is defined by the vertical position of the bottom surface of the wafer when placed on the wafer supports. Additionally illustrated is a recess 406 configured to receive a lift pin. As discussed above, the lift pin may be utilized to lift the wafer off the wafer supports to enable engagement by an end effector.

[0052] In some embodiments, each wafer support defines a minimum contact area (MCA). MCAs are used to improve precision fit between surfaces where high precision or tolerances are required and / or where minimal physical contact is desired to reduce defect risk. As described in more detail below, other areas in the system may also utilize MCAs, such as on the edge ring support, on the annular ring that supports the edge ring, and on the inner wafer support area of ​​the edge ring.

[0053] The pedestal assembly 400A further comprises an annular surface 410 that extends from a pedestal top diameter 422 (at the outer edge of the central top surface 402) to an annular surface outer diameter 424. The annular surface 410 defines an annular region that surrounds the central top surface 402, but is recessed therefrom, i.e., the vertical position of the annular surface 410 is lower than the vertical position of the central top surface 402.

[0054] A plurality of edge ring supports 412a, 412b, and 412c are disposed substantially at / along the edge (outer diameter) of the annular surface 410 and are symmetrically distributed around the annular surface. The edge ring supports, in some embodiments, define MCAs 504 for supporting a corresponding edge ring. The MCAs 504 may be disposed at one or more locations on the annular surface 410. In some implementations, the edge ring supports 412a, 412b, and 412c extend outside the outer diameter 424 of the annular surface, while in other implementations they do not. In some implementations, the upper surface of the edge ring supports has a height slightly higher than the annular surface 410 such that the edge ring is supported at a predetermined distance above the annular surface 410 when the edge ring is seated on the edge ring supports. Each edge ring support may include a recess (such as recess 413 of edge ring support 412a) into which a protrusion protruding from an underside of the edge ring seats when the edge ring is supported by the edge ring supports. The edge ring protrusions fit into recesses in the edge ring support to provide positive positioning of the edge ring and prevent the edge ring from moving when seated on the edge ring support.

[0055] In some embodiments, the top surface of the edge ring support 412 is flush with the annular surface 410, or in other embodiments, there is no edge ring support defined separately from the annular surface such that the edge ring can rest directly on the annular surface. As a result, no gap exists between the edge ring and the annular surface 410. In such embodiments, the path between the edge ring and the annular surface 410 is closed, preventing precursors from reaching the backside of the wafer via this path.

[0056] In the illustrated embodiment, there are three edge ring supports 412a, 412b, and 412c symmetrically positioned along the outer peripheral region of the annular surface, however, in other embodiments, there may be four or more edge rings distributed anywhere along the annular surface 410 of the pedestal assembly 400A to support the edge ring in a stable resting configuration.

[0057] It can be seen that when the wafer is supported by the wafer supports and the edge ring is supported by the edge ring supports, the edge region of the wafer is disposed above the inner portion of the edge ring in some embodiments. Typically, the edge region of the wafer extends inward from the peripheral edge of the wafer by about 2-5 millimeters (mm). A vertical separation is thereby defined between the edge region of the wafer and the inner portion of the edge ring.

[0058] It will be appreciated that in accordance with embodiments of the present disclosure, the support of the edge ring at the above distances above the annular surface 410 and the separation between the edge region of the wafer and the inner portion of the edge ring are adjusted to limit deposition onto the backside of the wafer at the edge region of the wafer (e.g., to minimize plasma formation in the gap below the edge of the wafer and above the annular surface 410) and / or for recipe-controlled adjustment of the edge profile performed by adjusting the relative capacitance between the RF flow paths at one or more points along the peripheral edge of the wafer. In particular, the ring adjuster assembly is configured to lift the edge ring at one or more points (e.g., circumferential points) along the periphery of the edge ring.

[0059] In some embodiments, the edge ring is elevated at a single point (e.g., to improve radial uniformity) and / or at three or more points (e.g., to improve radial and circumferential uniformity) to modify and tune the deposition profile based on a particular recipe or film characteristics. A single point elevation allows for vertical adjustment. A three point elevation allows for vertical adjustment and rotation about two horizontal axes (e.g., to provide tilt). A four or more point elevation allows for vertical adjustment and rotation about multiple horizontal axes (e.g., to provide tilt). In this manner, the ring adjuster assembly is configured to define the height and tilt of the edge ring relative to the central top surface 402 of the pedestal 140. In some embodiments, the range of motion of the edge ring is less than 0.5 millimeters (mm). In another embodiment, the range of motion of the edge ring is less than 1.0 mm. In yet another embodiment, the range of motion of the edge ring is less than 5.0 mm. In yet another embodiment, the range of motion of the edge ring is less than 10.0 mm.

[0060] The ring adjuster assembly includes at least one adjuster plate 440 and a plurality of ring adjuster pins 445. In particular, the plurality of ring adjuster pins 445 are connected to the adjuster plate 440, and the adjuster pins 445 extend vertically from the adjuster plate 440. Each of the ring adjuster pins 445 is disposed at a corresponding location on the adjuster plate 440 that is adjacent and outwardly of the diameter 149 of the pedestal 140. More particularly, the plurality of ring adjuster pins 445 are configured to contact an underside edge surface of an edge ring (not shown). As shown, the plurality of ring adjuster pins 445 include three ring adjuster pins 445a, 445b, and 445c that are radially spaced equidistant from one another around a horizontal plane. Each of the ring adjuster pins is independently movable vertically and, when in contact with the edge ring, defines the height and tilt of the edge ring relative to the top surface of the pedestal (e.g., central top surface 402). The operation of the multiple ring adjuster pins 445 is described in more detail below in conjunction with Figures 5A-5C, 6A, and 7A.

[0061] FIG. 4B is a cutaway perspective view of a portion of the pedestal 140 of the pedestal assembly 400A in accordance with one embodiment of the present invention. The cutaway view is a vertical cross-section across one of the edge ring supports (e.g., edge ring support 312a). An edge ring 430 is shown resting on the edge ring support 412a. In this configuration, the edge ring protrusion 431 sits within a recess 413 in the edge ring support 412a. Also, the wafer 101 is shown resting on the central upper surface 402 of the pedestal (supported by a wafer support (not shown)). The edge ring support 412a is height adjustable to allow adjustment of the distance above the annular surface 410 on which the edge ring is supported. In some implementations, the edge ring support may define an MCA, or a separate MCA 504 may be disposed on the annular surface 410 instead of using the edge ring support 412. In some embodiments, the edge ring supports 412a include spacers (e.g., shims) 416 for adjusting the height of at least one of the edge ring supports. That is, the spacers 416 are selected to provide a controlled distance between the edge ring 430 and the annular surface 410 when the edge ring rests on the carrier ring supports 412. Additionally, as described in more detail below, the positioning (e.g., vertical alignment and tilt) of the edge ring relative to the central top surface 402 of the pedestal 140 may be adjusted for recipe-controlled adjustment of the edge deposition profile of the wafer, which is performed by adjusting the relative capacitance between the RF currents at one or more points along the peripheral edge of the wafer.

[0062] Additionally, the edge ring support 412a and the spacers 416 are secured to the pedestal by mounting hardware 414. In some embodiments, the hardware 414 may be screws, bolts, nails, pins, or any other type of hardware suitable for securing the edge ring support 412 and the spacers 416 to the pedestal. In other embodiments, other techniques / materials (such as a suitable adhesive) may be utilized for securing the edge ring support 412 and the spacers 416 to the pedestal 140.

[0063] 4C is a cutaway view showing the relative capacitance of the channels as seen near the edge of a wafer (not shown) disposed on a pedestal 140, according to one embodiment of the present disclosure. As shown, the pedestal assembly 400C includes at least one pedestal 140 configured to support a substrate (e.g., wafer) (not shown). The pedestal 140 may include one or more heating and / or cooling channels 480 configured for temperature control of the pedestal. The pedestal assembly 400C includes a ring or edge ring (e.g., carrier ring, focus ring, etc.) configured to be disposed along the periphery of the pedestal. As shown in the pedestal assembly 400C, an edge ring 430 is disposed adjacent to an annular surface disposed on an edge of a central top surface 402 of the pedestal 140, where the annular surface may be stepped down from the central top surface.

[0064] As described above, the pedestal assembly 400C includes a ring adjuster subassembly configured to position (e.g., vertically align and tilt) an edge ring relative to the central upper surface 402 of the pedestal 140. The edge ring positioning allows recipe-controlled adjustment of the relative capacitance between the RF flow paths at one or more points along the peripheral edge of the wafer to optimize the edge deposition profile of the wafer disposed on the central upper surface 402 of the pedestal 140. As shown, the edge ring 430 has an underside that contacts a number of ring adjuster pins 445 connected to an adjuster plate 440 at a location adjacent and outwardly of the diameter of the pedestal 140. The adjuster pins 445 extend vertically from the adjuster plate 440. For example, the edge ring 430 is contacted by ring adjuster pin 445b as shown in FIG. 4C.

[0065] During operation of the pedestal assembly 400C (e.g., during wafer processing), there are two distinct RF flow paths: assuming a wafer disposed on the central upper surface 402 of the pedestal 140 and undergoing processing, one RF flow path 470b passes through the wafer and a second RF flow path 470a passes through the edge ring 430, such as near the edge of the wafer.

[0066] In particular, the RF flow path 470b through the wafer (not shown) is described below. RF power flows from a source (e.g., showerhead 150), through the wafer (not shown, but generally downward toward the central top surface 402 of the pedestal 140), through a small gap between the wafer and the central top surface 402 of the pedestal 140, and to ground to the pedestal 140. FIG. 4C-2 shows the total capacitance of the RF flow path 470b through the wafer to the pedestal 140, according to one embodiment of the present disclosure. The capacitance of the wafer (e.g., C wafer ) and the capacitance of air (e.g., C air ) are both constant and connected in series with ground.

[0067] The capacitance is defined by the following equation (1), where C is the capacitance (in Farads), A is the overlapping area of ​​the two plates (in square meters), and ε r is the static relative permittivity (also called dielectric constant) of the material between the plates, and ε is an electric constant (e.g., ε ≈ 8.854x10 -12 F m -1 ) and d is the separation between the plates in meters.

number

[0068] The RF flow path 470a through the edge (e.g., carrier / focus) ring 430 is described below. RF power is passed from a source (e.g., showerhead 150), through the edge ring 430, through a small gap between the edge ring 430 and the pedestal, and to ground at the pedestal. In a DSC, a carrier ring lift (CRL) or edge ring lift mechanism is implemented to adjust the gap between the edge ring 430 and the pedestal 140, for example, at three points (or any variable number of points). Since the capacitance of air is about 1 / 10 (one tenth) that of silicon (e.g., wafer) or alumina (e.g., edge ring), a very small change in the gap results in a very large change in the capacitance of the RF flow path 470a through the edge ring 430. Being able to adjust the relative capacitance between the two flow paths 470a and 470b dynamically allows for tuning of the deposition edge profile, which is highly dependent on other film properties that may vary widely between customer wafer types. Adjusting the capacitance of the two RF flow paths reduces radial non-uniformity in the deposition profile. Additionally, lifting (e.g., tilting) the edge ring 430 independently at three or more points also allows correction of any circumferential asymmetry that occurs near the edge. FIG. 4C-1 shows the total capacitance of the RF flow paths 470a through the edge ring to the pedestal, according to one embodiment of the present disclosure. The capacitance of the edge ring (e.g., C ring ) and the capacitance of air (e.g., C air) is connected in series with ground. The capacitance of the edge ring is constant. Meanwhile, in some embodiments of the present disclosure, the capacitance of the air (e.g., C air ) can be adjusted by adjusting the height and tilt of one or more points along the periphery of the edge ring relative to the central top surface 402 of the pedestal 140.

[0069] Without adjustment of the edge ring positioning (e.g., placement of the edge ring on the annular surface of pedestal 140), interference between the outer edge of the wafer and the inner edge of the edge ring (e.g., through flow paths 470a and 47b) may create undesirable electrical discontinuities that can create voltage gradients that affect the plasma sheath. For example, a thin edge ring is generally associated with a deposition plating profile that is thin at the center of the wafer and thick at the edges (see line 471). And a thick edge ring is generally associated with the opposite deposition plating profile that is thick at the center of the wafer and thin at the edges (see line 472). On the other hand, adjustment provides a more uniform deposition profile, especially at the edge of the wafer, as shown by line 475.

[0070] 5A is a top view of a pedestal assembly configuration (such as pedestal assembly 400C of FIG. 4C) configured for recipe-controlled adjustment of relative capacitance between RF flow paths at one or more points along the perimeter edge of a wafer to optimize the edge deposition profile of the wafer disposed on the pedestal, according to one embodiment of the present disclosure. As shown, the pedestal assembly includes a carrier ring 430A supported on an annular surface configured on the perimeter of the underlying pedestal. The carrier ring 430A includes an inner edge 433 that is disposed adjacent a diameter of the central top surface 402 of the pedestal and may be positioned just below the bottom of the edge of the wafer for wafer lifting purposes.

[0071] Carrier ring 430A further comprises an outer edge 432 from which one or more tabs 435 or radial extensions extend radially outward (e.g., radially from the center of carrier ring 430A). For example, carrier ring 430A comprises three tabs 435a, 435b, and 435c. In one embodiment, the tabs are disposed equidistant (e.g., at equal radial distances) from one another on a horizontal plane defined by the upper surface of carrier ring 430A. Each of the lower surfaces of one or more tabs 435 is positioned to contact a corresponding ring adjuster pin for lifting to implement dynamic sheath control (DSC). That is, each of the tabs extends to a maximum diameter. The maximum diameter also corresponds to the outer diameter of focus ring 430B (outlined with dotted lines). In particular, DSC is enabled by independently vertically moving contact points at contact portions (e.g., tabs 435) of carrier ring 430A as actuated by corresponding DSC adjuster actuators. For example, each of the ring adjuster pins is actuated (e.g., moved vertically) using a corresponding DSC adjuster actuator 505. For example, ring adjuster pin 445a (not shown) contacts tab 435a and is actuated using DSC adjuster actuator A (505a), ring adjuster pin 445b (not shown) contacts tab 435b and is actuated using DSC adjuster actuator B (505b), and ring adjuster pin 445c (not shown) contacts tab 435c and is actuated using DSC adjuster actuator C (505c). As described above, each of the ring adjuster pins 445 is connected to the adjuster plate at a location adjacent and outwardly of the diameter of the pedestal 140, where the adjuster pins 445 extend vertically from the adjuster plate 440. The operation of ring adjuster pin 445 is described in more detail below in connection with Figures 5C, 6A, and 7A.

[0072] 5B is a top view of a pedestal assembly (such as pedestal assembly 400C of FIG. 4C) configured for recipe-controlled adjustment of relative capacitance between RF flow paths at one or more points along the outer periphery edge of a wafer to optimize the edge deposition profile of the wafer disposed on the pedestal, according to one embodiment of the present disclosure. As shown, the pedestal assembly includes a focus ring 430B supported on an annular surface configured on the outer periphery of the underlying pedestal. The focus ring 430B includes an inner edge 435 that is disposed adjacent a diameter of the central top surface 402 of the pedestal and may be positioned just below the bottom of the edge of the wafer to fill any gap between the edge of the wafer and the annular surface to minimize plasma formation in the gap.

[0073] Focus ring 430B further includes an outer edge 436 that is radially uniform and defines an outer diameter of focus ring 430B. Outer edge 436 is configured such that the bottom surface of focus ring 430B contacts a corresponding ring adjuster pin at the outer edge for lifting to implement dynamic sheath control (DSC). Outer edge 436 or outer diameter also corresponds to the maximum diameter of a carrier ring (e.g., at a tab), where carrier ring 430A is shown outlined (e.g., dotted). In particular, DSC is enabled by independently vertically moving the contact points of focus ring 430B as actuated by corresponding DSC adjuster actuators. For example, each of the ring adjuster pins is actuated (e.g., moved vertically) using a corresponding DSC adjuster actuator 505. For example, ring adjuster pin 445a (not shown) contacts the bottom surface of the periphery of focus ring 430B and is actuated using DSC adjuster actuator A (505a). Additionally, ring adjuster pin 445b (not shown) contacts the bottom surface of the outer periphery of focus ring 430B and is actuated using DSC adjuster actuator B (505b). Additionally, ring adjuster pin 445c (not shown) contacts the bottom surface of the outer periphery of focus ring 430B and is actuated using DSC adjuster actuator C (505c). As mentioned above, each of ring adjuster pins 445 is connected to the adjuster plate at a location adjacent and outwardly of the diameter of pedestal 140, where adjuster pins 445 extend perpendicularly from adjuster plate 440. The operation of ring adjuster pins 445 is described in more detail below in connection with FIGS. 5C, 6A, and 7A.

[0074] FIG. 5C is a cutaway view, shown generally along line X--X in FIG. 5A or FIG. 5B, of a pedestal assembly (e.g., pedestal assembly 400C of FIG. 4C) configured with dynamic sheath control to lift a radial portion of a carrier ring for adjusting the relative capacitance of the RF flow path through a wafer or edge ring (e.g., carrier ring, focus ring, etc.) in accordance with one embodiment of the present disclosure.

[0075] The pedestal assembly comprises a pedestal 140 for supporting a substrate (e.g., a wafer) (not shown). The pedestal 140 is shown as having two portions 140a and 140b for illustrative purposes only. For example, the pedestal 140 may be formed in two portions to accommodate the fabrication of multiple heating and / or cooling elements implemented by the flow passage 480. As mentioned above, it is understood that the pedestal 140 is considered to be one element. Although the pedestal 140 may be described as having a generally circular shape when viewed from above, the footprint of the pedestal 140 may vary from circular to accommodate various shapes (such as carrier ring supports, focus rings, and end effector access).

[0076] In one embodiment, the pedestal 140 comprises a central top surface 402 that extends from a central axis 420 of the pedestal to a central top diameter 422. One or more wafer supports 404 (e.g., MCAs) may be defined on the central top surface 402 and are configured to support a substrate (e.g., a wafer) at an elevation above the central top surface 402. Additionally, an annular surface 410 extends from the central top diameter 422 to an outer diameter 424 of the annular surface 410. In one embodiment, the annular surface 410 is configured to step down from the central top surface 402. One or more edge ring supports 504 (e.g., MCAs) may be defined on the annular surface 410 and are configured to support an edge ring.

[0077] The pedestal 140 includes a central shaft 510 that positions the pedestal at a height during operation. As shown, the pedestal 140 is connected to a pedestal actuator 515 that is configured to control the movement of the pedestal. In particular, the central shaft 510 is coupled to the actuator 515 and the pedestal 140 such that the actuator 515 extends between the pedestal 140. The central shaft 510 is configured to move the pedestal 140 along the central axis 420. Thus, movement of the actuator 515 results in vertical movement of the central shaft 510, which in turn results in vertical movement of the pedestal 140.

[0078] Ring 430 is configured to be disposed around the outer periphery of pedestal 140. Ring 430 is generally shown in FIG. 5C. In one embodiment, ring 430 includes carrier ring 430A with a number of tabs that extend to a maximum outer diameter of the carrier ring. In another embodiment, ring 430 includes focus ring 430B, where the focus ring has a radially uniform outer diameter. Ring 430 is disposed adjacent annular surface 410 and extends outside diameter 149 of pedestal 140 at least at a number of radial extensions of the ring. That is, ring 430 may include one or more radial extensions in the case of a carrier ring (e.g., each tab or radial extension aligns with a corresponding ring adjuster pin) or may have a uniform diameter in the case of a focus ring, such that the maximum radial distance of the extensions in the carrier ring or the diameter in the focus ring extends outside of diameter 140 of pedestal 140 to allow contact with the adjuster pins for purposes of lifting ring 430. As shown in FIG. 5C, ring 430 is in contact with adjuster pin 445a and also in contact with adjuster pin 445b.

[0079] The pedestal assembly of FIG. 5C includes a ring adjuster subassembly configured to position (e.g., vertically and tilt) the edge ring 430 relative to the central top surface 402 of the pedestal 140. In this manner, recipe-controlled adjustment of relative capacitance is possible between the RF flow paths (e.g., the flow paths through the edge ring 430 or the flow paths through the wafer) at one or more points along the peripheral edge of the wafer to optimize the wafer edge deposition profile. In particular, the ring adjuster subassembly includes an adjuster flange 542 disposed about a central portion of the central shaft 510. Additionally, a sleeve 469 is connected to the adjuster flange 542 and extends from the adjuster flange 542 to an adjuster plate 440 disposed below the pedestal 140. In one embodiment, the sleeve 469 includes a funnel portion 460 connected to the adjuster plate 440. The sleeve 469 further includes a cylindrical portion 465 or sheath coupled to the adjuster flange 542. The cylindrical portion 465 is adjacent to the central shaft 510 but is configured to move independently relative to the central shaft 510. For example, the cylindrical portion and / or the sleeve 469 are configured to move independently relative to the central shaft 510.

[0080] A plurality of ring adjuster pins 445 are connected to the adjuster plate 440. Each of the adjuster pins 445 extends perpendicularly from the adjuster plate 440. Additionally, each of the adjuster pins 445 is disposed on the adjuster plate 440 at a corresponding location adjacent and outboard of the diameter 149 of the pedestal 140. As such, each ring adjuster pin is configured to contact the underside edge of the ring 430. As shown, ring adjuster pins 445a and 445b contact the underside edge of the ring 430 at a location adjacent and outboard of the diameter of the pedestal. Similarly, a third ring adjuster pin 445c (not shown) may be configured to contact the underside edge of the ring 430.

[0081] The adjuster flange 542 is coupled to one or more adjuster actuators to define the height and / or tilt of the ring 430 relative to the central top surface 402 of the pedestal 140. In one embodiment, the adjuster flange 542 is coupled to three adjuster actuators to define the height and tilt of the ring 430 relative to the central top surface 402 of the pedestal 140. As shown, the adjuster flange 542 is connected and / or coupled to a DSC adjuster actuator A (505a) for controlling the vertical movement of the ring adjuster pin 445a and a DSC adjuster actuator B (505b) for controlling the vertical movement of the ring adjuster pin 445b. Similarly, a third DSC adjuster actuator C (505c) (not shown) is connected and / or coupled to the adjuster flange and configured to control the vertical movement of the ring adjuster pin 445c.

[0082] In particular, each of the adjuster actuators is connected to the adjuster flange 542 in alignment with a contact point on the sleeve and / or the cylindrical portion 465 or sheath of the sleeve. The contact points may be radially spaced equidistant from one another about the horizontal plane. Furthermore, the contact points correspond to and / or are aligned with the ring adjuster pins. Specifically, the adjuster plate 440 includes a plurality of arms (e.g., radial extensions) corresponding to the contact points. For example, each arm is aligned with a corresponding contact point. Furthermore, the plurality of ring adjuster pins are connected to ends of the plurality of arms at locations adjacent and outward from the diameter 149 of the pedestal 140. As a result, the contact points on the adjuster flange 542, the plurality of arms of the adjuster plate 440, and the plurality of adjuster pins 445 are aligned.

[0083] Thus, vertical movement of a corresponding contact point on adjuster flange 542 (e.g., by interaction with a corresponding actuator) is transmitted through sleeve 469 and adjuster plate 440 to a corresponding adjuster pin. For example, DSC adjuster actuator A (505a) drives a corresponding contact point on adjuster flange 542 to provide vertical movement which is further transmitted to a corresponding arm or radial extension of adjuster plate 440 (e.g., through cylindrical portion or sheath 465 and funnel portion 460) and transmitted to corresponding adjuster pin 445a. Similarly, DSC adjuster actuator B (505b) drives a corresponding contact point on adjuster flange 542 which is transmitted to a corresponding arm of adjuster plate 440 and transmitted to corresponding adjuster pin 445b. DSC adjuster actuator C (505c) also drives a corresponding contact point on adjuster flange 542, which is communicated to a corresponding arm of adjuster plate 440 and transmitted to a corresponding adjuster pin 445c. In this manner, adjusting the position (e.g., vertically moving and tilting) of ring 430 relative to central top surface 402 of pedestal 140 allows recipe-controlled adjustment of the relative capacitance between the RF flow paths at one or more points along the peripheral edge of the wafer to optimize the edge deposition profile of the wafer positioned on central top surface 402.

[0084] Additionally, one or more hard stops 540 are disposed on the adjuster plate 440. The hard stops 540 are configured to limit the upward vertical movement of the adjuster plate 440 relative to the pedestal 140. In this manner, the vertical movement of the adjuster plate 440 may be limited to prevent damage to the pedestal 140 and / or to prevent contact of the ring 430 with the bottom surface of the wafer.

[0085] FIG. 5D-1 illustrates dimensions of a ring 430 (e.g., carrier ring, focus ring, etc.) configured to adjust the relative capacitance of the RF flow paths through a wafer or ring, according to one embodiment of the present disclosure. In particular, FIG. 5D-1 illustrates in greater detail the outer region 565 of the pedestal 140 and ring 430 of the pedestal assembly illustrated in FIG. 5C. In particular, the pedestal assembly is configured to raise the ring 430 at one or more points to facilitate recipe-controlled adjustment of the relative capacitance between the RF flow paths at one or more points along the peripheral edge of the wafer.

[0086] As shown, the pedestal assembly includes a pedestal 140 having a central top surface 402. The central top surface 402 may include one or more MCAs 404. The pedestal 140 includes an annular surface 410 that is recessed from the central top surface 402, such as by a distance D9. A wafer 101 having a thickness D2 is positioned above the central top surface 402 by a wafer support level D6, as embodied by the MCAs 404.

[0087] Ring 430 rests on annular surface 410 (e.g., on MCA 504 or on ring support 412 as described above). Ring 430 may be separated from annular surface 410 by a distance D4, as implemented by the MCA or ring support. Ring 430 has a conventional thickness D1. Additionally, ring 430 includes an inner edge 433 (e.g., in the case of carrier ring 430A) or 435 (e.g., in the case of focus ring 430B). For purposes of illustration, inner edges 433 / 435 of both carrier ring 430A and focus ring 430B may be similarly configured to include a step 560 having a surface 561 that is directly below a bottom surface of wafer 101 disposed on central top surface 402. The thickness of step 560 is shown as D5 and defines a separation D3 between surface 561 of the step and central top surface 402 that roughly corresponds to the bottom surface of wafer 101. In several embodiments of the present disclosure, the thickness D5 of the step 561 is thinner than a typical ring to provide lift to the ring 430 for the purpose of making the vertical separation and / or tilt of the ring 430 relative to the central top surface 402 adjustable.

[0088] Typically, the separation D3 is close to zero to minimize the gap between the bottom surface of the wafer and the annular surface 410 in order to minimize plasma formation in the gap. However, the distance D3 is increased in one embodiment to allow for DSC to be performed, as further shown in FIG. 5D-2, which illustrates the pedestal assembly shown in FIG. 5D-1 in a raised position. As shown, the ring 430 is elevated from the annular surface 410 in accordance with one embodiment of the present disclosure. In particular, the ring 430 is elevated by at least the ring pin adjuster 445a such that the surface 561 of the step 560 is close to the bottom surface of the wafer 101. That is, the distance D3′ between the surface 561 and the central top surface 402 is approximately zero. Thus, the ring 430 is separated from the annular surface so as not to contact either the MCA 504 or the annular surface 410. It is understood that ring 430 may be raised to any height, for example to adjust distance D3, so long as the ring (eg, surface 561) is not in contact with wafer 101.

[0089] FIG. 5D-3 illustrates dimensions of a thin ring 430' (e.g., carrier ring, focus ring, etc.) configured to adjust the relative capacitance of the RF flow paths through the wafer 101 or the ring 430', where the carrier / focus ring rests on an annular surface, according to one embodiment of the present disclosure. In particular, FIG. 5D-3 illustrates in greater detail the outer region 565 of the pedestal 140 and the ring 430 of the pedestal assembly illustrated in FIG. 5C. In particular, the pedestal assembly of FIG. 5D-3 is configured to raise the ring 430 at one or more points to facilitate recipe-controlled adjustment of the relative capacitance between the RF flow paths at one or more points along the perimeter edge of the wafer. The pedestal assembly of FIG. 5D-3 is similar to the pedestal assembly of FIG. 5D-1, except that the thickness D1' of the ring 430' is less than the thickness D1 of the ring 430 of FIGS. 5D-1 and 5D-2. This provides additional tuning of the relative capacitance between the RF flow paths by selecting rings of specific thicknesses (e.g., swapping rings to obtain optimal thickness for recipe and wafer type).

[0090] In particular, ring 430' in FIG. 5D-3 is shown resting on annular surface 410 (e.g., on MCA 504 or on ring support 412). Ring 430' may be separated from annular surface 410 by a distance D4. Inner edges 433 / 435 of both carrier ring 430A and focus ring 430B may be similarly configured to include a step 560' having a surface 561' that is directly below the bottom surface of wafer 101 disposed on central top surface 402. The thickness of step 560 is shown as D15 and defines a separation D13 between surface 561' of the step and central top surface 402 that roughly corresponds to the bottom surface of wafer 101. In embodiments of the present disclosure, thickness D15 of step 561' is thinner than conventional rings to provide lift of ring 430 for adjustable purposes of vertical separation and / or tilt of ring 430 relative to central top surface 402.

[0091] As mentioned above, typically, the separation D13 is close to zero to minimize the gap between the bottom surface of the wafer 101 and the annular surface 410 in order to minimize plasma formation in the gap. However, the distance D13 is increased in one embodiment to allow for DSC to be performed, as further shown in FIG. 5D-4, which illustrates the pedestal assembly shown in FIG. 5D-3 in a raised position. In particular, the ring 430' is elevated from the annular surface 410 in accordance with one embodiment of the present disclosure. As shown, the ring 430 is elevated by at least the ring pin adjuster 445a such that the surface 561' of the step 560' approaches the bottom surface of the wafer 101. That is, the distance D13' between the surface 561' and the central top surface 402 is approximately zero. Thus, the ring 430' is separated from the annular surface so as not to contact either the MCA 504 or the annular surface 410. It is understood that ring 430' may be raised to any height, for example to adjust distance D13, so long as the ring (eg, surface 561') is not in contact with wafer 101.

[0092] FIG. 6A is a cutaway view of a pedestal assembly with dynamic sheath control to lift a radial portion of a carrier ring to adjust the relative capacitance of an RF flow path through a wafer or carrier ring, according to one embodiment of the disclosure. The cutaway view may be taken along line Z--Z in FIG. 5A. The pedestal assembly may be included, for example, in a substrate processing system. The pedestal assembly of FIG. 6A may be implemented in the systems of FIGS. 1-3, such as multi-station and single-station processing tools.

[0093] The pedestal assembly includes a pedestal 140 for supporting a substrate, where the pedestal 140 includes a central shaft 510 that positions the pedestal at a height during operation. The pedestal includes a central upper surface, as described above. A carrier ring 430A is configured to be disposed along an outer periphery of the pedestal 140. In particular, the carrier ring 430 is supported on the annular surface of the pedestal 140, as described above. The carrier ring 430A includes a number of tabs that extend to an outer diameter of the ring. In particular, the carrier ring 430A is disposed adjacent the annular surface and extends outside the diameter 149 of the pedestal 140 at least at a number of radial extensions of the ring 430A. For example, in the cutaway view shown in Figure 6A taken along line Z--Z in Figure 5A, carrier ring 430A extends (e.g., with radial arms or extensions) to its maximum diameter, such as to contact ring adjuster pin 445b, which is outside diameter 149 of pedestal 140. However, on the left side of Figure 6A, carrier ring 430A does not reach its maximum diameter, but only extends to outer peripheral edge 432 (see Figure 5A), and therefore does not extend outside diameter 149 of pedestal 140.

[0094] The pedestal assembly includes a ring adjuster subassembly. The subassembly includes a lower flange 541 disposed around a lower portion of the central shaft 510. The lower flange 541 is configured to maintain a vacuum within the central shaft. The lower flange 541 may be connected to a bucket 525 that is connected to a pedestal actuator, where the bucket 525 and the lower flange 541 maintain a vacuum within the central shaft 510. The subassembly further includes a lower bellows 530 connected to the lower flange 541. An adjuster flange 542 (e.g., a middle flange) is connected to the lower bellows 530 and disposed around a central portion of the central shaft 510. A sleeve is connected to the adjuster flange 542 and extends from the adjuster flange 542 to an adjuster plate 440 disposed below the pedestal 140. The sleeve includes a sheath or cylindrical portion 465 that is connected to the adjuster flange and adjacent to the central shaft 510. The sheath or cylindrical portion 465 can be moved independently of the central shaft 510 for purposes of performing DSC, and moves with the central shaft when DSC is not being performed. The sleeve comprises a funnel portion connected to the sheath or cylindrical portion and to the adjuster plate 440. An upper bellows 535 is connected to the adjuster flange 542. An upper flange 543 is connected to the upper bellows 535. The flange, bellows, and sleeve configuration provide for movement of the adjuster plate during DSC.

[0095] As described above, a plurality of ring adjuster pins 445 are connected to the adjuster plate 440. Each of the adjuster pins 445 extends perpendicularly from the adjuster plate 440. Additionally, each of the adjuster pins 445 is disposed on the adjuster plate 440 at a corresponding location adjacent and outboard of the diameter 149 of the pedestal 140. As such, each ring adjuster pin is configured to contact the underside edge of the carrier ring 430A. As shown, ring adjuster pin 445b contacts the underside edge of the carrier ring 430A at a location adjacent and outboard of the diameter of the pedestal. Other ring adjuster pins may also contact the underside edge of the carrier ring 430A.

[0096] More specifically, the adjuster flange 542 is coupled to one or more adjuster actuators to define the height and / or tilt of the carrier ring 430A relative to the central top surface 402 of the pedestal 140. In one embodiment, the adjuster flange 542 is coupled to three adjuster actuators to define the height and tilt of the carrier ring 430A.

[0097] In particular, each of the adjuster actuators is connected to adjuster flange 542 in alignment with a contact point on the cylindrical portion 465 or sheath of the sleeve, and thus in alignment with a ring adjuster pin (e.g., through an arm or radial extension of adjuster plate 440). As a result, the contact points on adjuster flange 542, the arms of adjuster plate 440, and the adjuster pins 445 are aligned. In this manner, vertical movement of the corresponding contact point on adjuster flange 542 (e.g., through interaction with a corresponding actuator) is transferred to the corresponding adjuster pin. For example, DSC adjuster actuator B (505b) drives a corresponding contact point on adjuster flange 542 to provide vertical movement, which is also transferred to a corresponding arm or radial extension of adjuster plate 440 (e.g., through cylindrical portion or sheath 465 and funnel portion 460) and transferred to corresponding adjuster pin 445b. Similar transfer is achieved for movement of adjuster pins 445a and 445c. In this manner, adjusting the position (e.g., height and tilt) of carrier ring 430A relative to central top surface 402 of pedestal 140 allows recipe-controlled adjustment of the relative capacitance between the RF flow paths at one or more points along the peripheral edge of the wafer to optimize the edge deposition profile of the wafer disposed on central top surface 402.

[0098] 6B is an isometric view of the pedestal assembly shown in FIG. 6A with dynamic sheath control to raise radial portions of the carrier ring 430A for purposes of adjusting the relative capacitance of the wafer (not shown) or RF flow path through the carrier ring 430A, according to one embodiment of the present disclosure. In particular, the carrier ring 430A includes tabs 435a, 435b, and 435c that extend outside the diameter 149 of the pedestal 140. As such, the tabs 435a, 435b, and 435c may contact the ring adjuster pins 445a, 445b, and 445c, respectively. Ring supports 412a, 412b, and 412c are also shown engaging the carrier ring 430A to prevent lateral movement of the ring.

[0099] FIG. 6C is a top view of a multi-station processing tool showing the arrangement of the tabs or radial extensions of the carrier ring such that the tabs do not interfere with the chamber walls when the carrier ring is moved from station to station, according to one embodiment of the present disclosure. The multi-station processing tool may be implemented in the substrate processing system 100 of FIG. 1, which includes a chamber 102 having at least a lower chamber portion 102b (shown in FIG. 6C) and an upper chamber portion. The multi-station processing tool may include four stations (e.g., stations 1-4), each similarly configured to include a pedestal assembly (such as those described above). For example, each pedestal assembly includes a pedestal 140, a carrier ring 430A, and a ring adjuster assembly. A rotating feed plate 690 is included in the multi-station processing tool. The rotating feed plate 690 is configured to simultaneously lift the carrier ring 430A from a station and then rotate at least one or more stations before lowering the edge ring 430A to the next position so that further plasma processing, treatments, and / or film deposition can be performed on each wafer.

[0100] The carrier rings 430A are positioned in each of stations 1-4 such that the tabs 435 on each carrier ring 430A do not contact the walls of the chamber (e.g., the walls of the lower chamber portion 102b) when the carrier ring is rotated. For example, the carrier ring 430A is oriented in station 1 such that the tabs 435a, 435b, and 435c do not contact the chamber walls during rotational feed. As shown, the tab 435b of the carrier ring 430A in station 1 approximately follows an arc 691 such that the tab 435b does not contact the chamber walls when the wafer and corresponding carrier ring 430A are rotated from station 1 to station 2.

[0101] FIG. 7A is a cutaway view of a pedestal assembly with dynamic sheath control to lift a radial portion of a focus ring for adjusting the relative capacitance of an RF flow path through a wafer or focus ring, according to one embodiment of the disclosure. The cutaway view may be taken along line Z--Z in FIG. 5B. The pedestal assembly may be included, for example, in a substrate processing system. The pedestal assembly of FIG. 7A may be implemented in the systems of FIGS. 1-3, such as multi-station and single-station processing tools.

[0102] The pedestal assembly includes a pedestal 140 for supporting a substrate, where the pedestal 140 includes a central shaft 510 that positions the pedestal at a height during operation. The pedestal includes a central upper surface, as described above. A focus ring 430B is configured to be disposed along an outer periphery of the pedestal 140. In particular, the focus ring 430B is supported on the annular surface of the pedestal 140, as described above. The focus ring 430B has a radially uniform outer diameter. In particular, the focus ring 430B is disposed adjacent the annular surface and extends outside the diameter 149 of the pedestal 140. For example, in the cutaway view shown in FIG. 7A taken along line Z--Z of FIG. 5B, the focus ring 430B extends to contact ring adjuster pin 445b that is outside the diameter 149 of the pedestal 140. Focus ring 430B has a uniform outer diameter so that it reaches outside pedestal diameter 149 even though it is not contacting the corresponding ring adjuster pin on the left side of FIG. 7A.

[0103] The pedestal assembly includes a ring adjuster subassembly. The subassembly includes a lower flange 541 disposed around a lower portion of the central shaft 510. The lower flange 541 is configured to maintain a vacuum within the central shaft. The lower flange 541 may be connected to a bucket 525 that is connected to a pedestal actuator, where the bucket 525 and the lower flange 541 maintain a vacuum within the central shaft 510. The subassembly further includes a lower bellows 530 connected to the lower flange 541. An adjuster flange 542 (e.g., a middle flange) is connected to the lower bellows 530 and disposed around a central portion of the central shaft 510. A sleeve is connected to the adjuster flange 542 and extends from the adjuster flange 542 to an adjuster plate 440 disposed below the pedestal 140. The sleeve includes a sheath or cylindrical portion 465 that is connected to the adjuster flange and adjacent to the central shaft 510. The sheath or cylindrical portion 465 can be moved independently of the central shaft 510 for purposes of performing DSC, and moves with the central shaft when DSC is not being performed. The sleeve comprises a funnel portion connected to the sheath or cylindrical portion and to the adjuster plate 440. An upper bellows 535 is connected to the adjuster flange 542. An upper flange 543 is connected to the upper bellows 535. The flange, bellows, and sleeve configuration provide for movement of the adjuster plate during DSC.

[0104] As described above, a plurality of ring adjuster pins 445 are connected to adjuster plate 440. Each of adjuster pins 445 extends perpendicularly from adjuster plate 440. Additionally, each of adjuster pins 445 is disposed on adjuster plate 440 at a corresponding location adjacent and outboard of diameter 149 of pedestal 140. As such, each ring adjuster pin is configured to contact the underside edge of focus ring 430B. As shown, ring adjuster pin 445b contacts the underside edge of focus ring 430B at a location adjacent and outboard of diameter 149 of pedestal 140. Other ring adjuster pins may also contact the underside edge of focus ring 430B.

[0105] The adjuster flange 542 is coupled to one or more adjuster actuators to define the height and / or tilt of the focus ring 430B relative to the central top surface 402 of the pedestal 140. In one embodiment, the adjuster flange 542 is coupled to three adjuster actuators to define the height and tilt of the focus ring 430B. As described above, each of the adjuster actuators is connected to the adjuster flange 542 in alignment with a contact point on the cylindrical portion 465 of the sleeve or sheath, and thus in alignment with a ring adjuster pin (e.g., through an arm or radial extension of the adjuster plate 440). In this manner, vertical movement of a corresponding contact point on the adjuster flange 542 (e.g., by interaction with a corresponding actuator) is transferred to the corresponding adjuster pin. For example, DSC adjuster actuator B (505b) drives a corresponding contact point on adjuster flange 542 to provide vertical movement which is further transmitted (e.g., through cylindrical portion or sheath 465 and funnel portion 460) to a corresponding arm or radial extension of adjuster plate 440 and transmitted to corresponding adjuster pin 445b. In this manner, adjusting the position (e.g., height and tilt) of focus ring 430B relative to central upper surface 402 of pedestal 140 allows recipe-controlled adjustment of the relative capacitance between the RF flow paths at one or more points along the peripheral edge of a wafer to optimize the edge deposition profile of the wafer disposed on central upper surface 402.

[0106] FIG. 7B is an isometric view illustrating the pedestal assembly shown in FIG. 7A with dynamic sheath control to lift a radial portion of focus ring 430B for the purpose of adjusting the relative capacitance of the RF flow path through the wafer or focus ring, in accordance with one embodiment of the disclosure.

[0107] In particular, focus ring 430B has a radially uniform outer diameter that extends outside diameter 149 of pedestal 140. As such, the outer edge of focus ring 430B may contact ring adjuster pins 445a, 445b, and 445c. Ring supports 412a, 412b, and 412c are also shown engaging focus ring 430B to prevent lateral movement of the ring.

[0108] 8A-8B are cross-sectional views of an interface between a central shaft 410 of a pedestal 140 and a sleeve 469 configured for dynamic sheath control to lift a radial portion of an edge ring (e.g., carrier ring or focus ring) to adjust the relative capacitance of the RF flow path through the wafer or edge ring (e.g., carrier ring, focus ring, etc.) in accordance with one embodiment of the present application. The sleeve comprises a funnel portion 460 and a sheath or cylindrical portion 465 that surrounds the central shaft 510. A ring adjuster subassembly provides independent movement of the sleeve 469 relative to the central shaft 510 that translates into movement of the edge ring (e.g., height and tilt relative to the central top surface of the pedestal). In particular, a portion of the ring adjuster subassembly is shown in FIGS. 8A-8B. The subassembly comprises a lower flange 541 disposed around a lower portion of the central shaft 510 and is further configured to maintain a vacuum within the central shaft of the pedestal 140. For example, a lower flange 541 is connected to the bucket 525 and / or the boundary of the bucket to form an accessible seal around the lower portion of the central shaft. Movement of the central shaft is provided by actuation of the bucket 525 connected to the lower flange 541. A lower bellows 530 is connected to the lower flange 541. An adjuster flange 542 is connected to the lower bellows 530 and is further disposed around the central portion of the central shaft 510. The sleeve includes a sheath or cylindrical portion 465 that is connected to the adjuster flange 542 at one end and extends from the adjuster flange 542 at the other end to an adjuster plate (not shown) that is disposed below the pedestal (not shown). An upper bellows 535 is connected to the adjuster flange 542 at one end and to the upper flange 543 at the opposite end.

[0109] The flange and bellows configuration of Figures 8A-8B maintains the vacuum within the central shaft 510 while also providing actuation of the mid flange 542 and sheath or cylindrical portion 465 outside of the vacuum. More specifically, Figure 8B illustrates the relative movement of the central shaft 510 of the pedestal 140 and the sheath or cylindrical portion 465 of the sleeve configured for dynamic sheath control to lift a radial portion of an edge ring (e.g., a carrier ring or focus ring) to adjust the relative capacitance of the RF flow path through the wafer or edge ring, in accordance with one embodiment of the present disclosure. The independent movement of the sheath or cylindrical portion 465 relative to the central shaft 510 can be described with reference to distances D811, D820, D821, and D822. In particular, D811 describes the distance between the lower flange 541 and the mid flange or adjuster flange 542. Also, D820 describes the distance between the bucket 525 and the mid flange or adjuster flange 542. D820 provides similar information to D811 since the bucket and lower flange 541 are fixed relative to one another. In addition, D821 describes the distance between the intermediate or adjuster flange 542 and the upper flange 542. In addition, D822 describes the distance between the bucket 525 and the upper flange 542.

[0110] In particular, as shown in FIG. 8B, when the bucket 525 is moved vertically (e.g., Z1), the dimensions D811 and D820 remain constant as the corresponding components move with the bucket 525. That is, the relative distance D811 between the intermediate or adjuster flange 542 and the lower flange 541 remains constant. Also, since the lower flange 541 is fixed relative to the bucket, the relative distance D820 between the intermediate or adjuster flange 542 and the bucket 525 remains constant (i.e., the lower bellows 530 does not expand or contract / compress). This is because the actuator system, which includes the motor 810 and the ball screw assembly (including the ball screw 811 and the block 812), is attached to both the bucket 525 and the intermediate or adjuster flange 542. When Z1 changes, the relative distances 811 and 820 remain constant unless the actuator system is active. In one embodiment, distance 821 between intermediate or adjuster flange 542 and upper flange 543 changes as Z1 changes. Similarly, distance 822 between upper flange 543 and lower flange 541 changes. For example, when bucket 525 is moved vertically upward in Z1, the upper bellows compresses and D821 (and D822) becomes smaller. Distances D811 and D820 remain constant. Similarly, when bucket 525 is moved vertically downward in Z1, the upper bellows expands and D821 (and D822) becomes larger.

[0111] On the other hand, when the intermediate or adjuster flange 542 is driven, the dimensions D811, D820, D821, and D822 may change. Driving the intermediate or adjuster flange 542 may be achieved by a motor 810 and a ball screw assembly (e.g., ball screw 811, block 812, etc.). The intermediate or adjuster flange 542 serves as an adjustable plane offset from the edge ring plane. Other driving methods may be supported in other embodiments. In particular, when the ball screw is rotated, the block 812 is moved vertically up or down. The block 812 is fixed to one contact point or contact portion of the intermediate or adjuster flange 542, for example, using a mounting bracket. Thus, the vertical movement of the block 812 is translated into a movement (e.g., vertical movement) of the contact point or contact portion of the intermediate or adjuster flange 542. In this manner, the lower bellows 530 expands or contracts such that the distances D811 and D820 change, where D811 and D820 provide information about the relative distance between the middle or adjuster flange 542 and the lower flange 541. The distances D821 and D822, which provide information about the relative distance between the upper flange 543, the middle or adjuster flange 542, and the lower flange 541, may change or remain constant.

[0112] Additional actuator systems may be implemented to provide vertical movement of various other contact points or contact portions of the mid- or adjuster flange 542, as described above. For example, a three-contact point system may be implemented on the mid- or adjuster flange 542 to implement dynamic sheath control that defines the height and tilt of the edge ring relative to the central top surface of the pedestal. In particular, DSC adjuster actuator A (505a) (e.g., comprising a motor and ball screw assembly) may be connected to a first contact point or contact portion of the mid- or adjuster flange 542. Also, DSC adjuster actuator B (505b) may be connected to a second contact point or contact portion of the mid- or adjuster flange 542. Additionally, DSC adjuster actuator C (505c) may be connected to a third contact point or contact portion of the mid- or adjuster flange 542. Each DSC adjuster actuator may be independently operated to provide independent movement of a corresponding contact point on the mid- or adjuster flange 542. That is, a first contact point on the intermediate or adjuster flange 542 may be moved independently relative to the other contact points. Thus, one or more of the contact points may be moved to define the height and tilt of the sleeve 469 (e.g., the sheath or cylindrical portion 465 and the funnel portion 460), which is transferred to the adjuster plate 440 and to one or more of the ring adjuster pins, as described above. In yet another embodiment, instead of three actuator assemblies, a single actuator assembly may be used with opposing bearing guides (e.g., for cost savings, space requirements, or simplicity).

[0113] It is understood that the dual bellows system described at least in Figures 8A-8B for providing dynamic sheath control may be implemented with one or more bellows to lift and / or tilt the edge ring (e.g., through appropriate connections with sleeves, adjuster plates, adjuster pins, etc.).

[0114] In one embodiment, the actuator assembly and / or ring adjuster subassembly comprises a pressure controlled flexure welded to the pedestal and a pressure manifold machined into the pedestal itself. The actuation distance is a function of the flexure dimensions (e.g., inner diameter--ID, outer diameter--OD, stem OD, material thickness, material, etc.), the press-in force (relative to the chamber side (e.g., either about 0 psi or about 14.7 psi, depending on whether it is atmospheric or vacuum)), and the temperature of the flexure (which affects the elastic modulus). Pressure is the controlled variable.

[0115] In yet another embodiment, the actuator assembly and / or ring adjuster subassembly includes a pressure controlled bellows welded to the pedestal with a pressure manifold machined into the pedestal itself. The actuation distance is a function of the bellows dimensions or spring constant (id / od, thickness, material), the compression force (against the chamber side (e.g., either about 0 psi or 14.7 psi depending on whether atmospheric pressure or vacuum)) and the temperature of the flexure, which affects the elastic modulus. Pressure is the controlled variable.

[0116] FIG. 9 illustrates a control module 900 for controlling the above-described system. For example, the control module 900 may include a processor, a memory, and one or more interfaces. The control module 900 may be used to control devices in the system based in part on sensed values. By way of example only, the control module 900 may control one or more of a valve 902, a filter heater 904, a pump 906, and other devices 908 based on sensed values ​​and other control parameters. The control module 900 receives sensed values ​​from a pressure gauge 910, a flow meter 912, a temperature sensor 914, and / or other sensors 916, by way of example only. The control module 900 may also be used to control process conditions during precursor delivery and film deposition. The control module 900 typically includes one or more memory devices and one or more processors.

[0117] The control module 900 may control the operation of the precursor delivery system and deposition apparatus. The control module 900 executes a computer program that includes a set of instructions for controlling the process timing, temperature of the delivery system, pressure differential across the filter, valve position, mixture of gases, chamber pressure, chamber temperature, substrate temperature, RF power levels, position of the substrate chuck or pedestal, and other parameters of a particular process. The control module 900 may monitor the pressure differential and automatically switch the delivery of vapor precursor from one or more flow paths to one or more other flow paths. Other computer programs stored in a memory device associated with the control module 900 may be used in some embodiments.

[0118] Typically, there is a user interface associated with the control module 900. The user interface may include a display 918 (e.g., a display screen and / or graphical software display of equipment and / or process conditions) and user input devices 920, such as a pointing device, keyboard, touch screen, microphone, etc.

[0119] Computer programs for controlling precursor delivery, deposition, and other processes in a process sequence can be written in any conventional computer readable programming language, such as assembly language, C, C++, Pascal, Fortran, etc. Compiled object code or script is executed by a processor to perform the tasks specified in the program.

[0120] The control module parameters relate to process conditions such as, for example, filter pressure differential, process gas composition and flow rate, temperature, pressure, plasma conditions (such as RF power level and low frequency RF frequency), cooling gas pressure, and chamber wall temperature.

[0121] The system software may be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control the operation of the chamber components necessary to perform the deposition processes of the present invention. Examples of programs or program sections for this purpose include substrate positioning code, process gas control code, pressure control code, heater control code, and plasma control code.

[0122] The substrate positioning program may comprise program code for controlling chamber components used to load the substrate onto the pedestal or chuck and to control the spacing between the substrate and other parts of the chamber (such as the gas inlet and / or gas target). The process gas control program may comprise code for controlling gas composition and flow rates, and optionally for flowing gas into the chamber prior to deposition to stabilize the pressure in the chamber. The filter monitoring program includes code for comparing the measured difference to a predetermined value and / or code for switching flow paths. The pressure control program may comprise code for controlling the pressure in the chamber, for example, by adjusting a throttle valve in the exhaust system of the chamber. The heater control program may include code for controlling current to a heating unit for heating components in the precursor delivery system, the substrate, and / or other parts of the system. Alternatively, the heater control program may control the supply of a thermally conductive gas (such as helium) to the substrate chuck.

[0123] Examples of sensors that may be monitored during deposition include, but are not limited to, mass flow control modules, pressure sensors (such as pressure gauge 910), thermocouples located on the delivery system, pedestal, or chuck, and condition sensors 920 of Figures 9A-9C. Appropriately programmed feedback and control algorithms may be used with data from these sensors to maintain desired process conditions. Implementation of embodiments of the present disclosure in single or multi-chamber semiconductor processing tools has been described above.

[0124] In some embodiments, the controller is part of a system, which may be part of the examples described above. Such systems may include semiconductor processing equipment, such as one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (substrate pedestal, gas flow system, etc.). These systems may be integrated with electronics for controlling the operation of the system before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as a "controller" and may control various components or sub-components of the system. The controller may be programmed to control any of the processes disclosed herein, such as supply of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow settings, fluid supply settings, position and motion settings, and substrate movement in and out of tools and other moving tools and / or load locks connected or coupled to the specific system, depending on the processing requirements and / or type of system.

[0125] In general, a controller may be defined as electronic equipment having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions are communicated to the controller in the form of various individual settings (or program files) to define operational parameters for performing a particular process on or for a semiconductor substrate or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by a process engineer to accomplish one or more process steps during processing of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0126] The controller may be part of or connected to a computer that may be integrated with, connected to, or otherwise networked with the system, or a combination thereof, in some embodiments. For example, the controller may be in the "cloud" of all or part of a fab host computer system that may enable remote access of substrate processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, to look at the history of past manufacturing operations, or to look at trends or performance indicators from multiple manufacturing operations, to change parameters of a current process, to set up a process step according to a current process, or to start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network (which may include a local network or the Internet).

[0127] The remote computer may include a user interface that allows for input or programming of parameters and / or settings, which are communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the process steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by having one or more separate controllers that are networked and operate toward a common purpose (such as the process and control described herein). One example of a distributed controller for such purposes is one or more integrated circuits on the chamber that communicate with one or more integrated circuits located remotely (such as at the platform level or located as part of the remote computer) that cooperate to control the process in the chamber.

[0128] Without being limited thereto, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or utilized in the fabrication and / or manufacturing of semiconductor wafers.

[0129] As described above, depending on the processing step or steps being performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to carry containers of wafers to or from tool locations and / or load ports within a semiconductor manufacturing factory.

[0130] The above description of the embodiments is for illustrative and explanatory purposes. It is not intended to be comprehensive or to limit the present disclosure. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, and may be substituted, if applicable, and may be utilized in the selected embodiment unless otherwise shown or described. The same may be modified in many ways. Such modifications are not considered as departures from the present disclosure, and all such modifications are intended to be included within the scope of the present invention.

[0131] Although the present embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be made within the scope of the appended claims. The present embodiments are therefore to be considered as illustrative and not restrictive, and the embodiments are not to be limited to the details given herein, but may be modified within the scope of the claims and their equivalents. [Application Example 1] A pedestal assembly, a pedestal for supporting a substrate, the pedestal having a central shaft that positions the pedestal at a height during operation; a ring configured to be disposed around an outer periphery of the pedestal; 1. A ring adjuster subassembly comprising: an adjuster flange disposed about a central portion of the central shaft; a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed below the pedestal; a ring adjuster subassembly connected to and extending perpendicularly from the adjuster plate, each of the ring adjuster pins being at a corresponding location on the adjuster plate adjacent and outboard of a diameter of the pedestal, the ring adjuster pins being configured to contact an underside edge of the ring, the adjuster flange being coupled to at least three adjuster actuators to define a height and tilt of the ring relative to an upper surface of the pedestal; A pedestal assembly comprising: [Application Example 2] In the pedestal assembly according to Application Example 1, the sleeve is A cylindrical portion connected to the adjuster flange; a funnel portion connected to the cylindrical portion and the adjuster plate; A pedestal assembly comprising: [Application Example 3] A pedestal assembly according to Application Example 2, wherein the cylindrical portion is adjacent to the central shaft. [Application Example 4] The pedestal assembly according to Application Example 1, wherein the pedestal is a central top surface extending from a central axis of the pedestal to a central top diameter; an annular surface extending from the central upper surface diameter to an outer diameter of the annular surface, the annular surface being recessed from the central upper surface; Equipped with the central shaft is configured to have vertical movement extending from the central axis to a shaft diameter and transmitted to the pedestal; The ring is disposed adjacent the annular surface and extends outside the diameter of the pedestal at least a plurality of radial extensions of the ring. [Application Example 5] A pedestal assembly as described in Application Example 1, wherein the ring includes a carrier ring having a plurality of tabs extending to a maximum outer diameter of the carrier ring, each tab being aligned with a corresponding ring adjuster pin. [Application Example 6] The pad according to Application Example 1, wherein the ring includes a focus ring having a uniform outer diameter. [Application Example 7] A pedestal assembly as described in Application Example 1, wherein the adjuster actuator is connected to the adjuster flange in alignment with contact points that are radially spaced equidistant from each other around a horizontal plane. [Application Example 8] The pedestal assembly according to Application Example 7, The adjuster plate includes a plurality of arms corresponding to the contact points, The plurality of ring adjuster pins are connected to ends of the plurality of arms. [Application Example 9] A pedestal assembly according to Application Example 7, wherein vertical movement of a corresponding contact point on the adjuster flange is transmitted to a corresponding adjuster pin through the sleeve and adjuster plate. [Application Example 10] The pedestal assembly according to Application Example 1, further comprising: A pedestal assembly comprising a plurality of hard stops disposed on the adjuster plate and configured to limit upward vertical movement of the adjuster plate relative to the pedestal. [Application Example 11] A pedestal assembly, a pedestal for supporting a substrate, the pedestal having a central shaft that positions the pedestal at a height during operation; a ring configured to be disposed around an outer periphery of the pedestal; 1. A ring adjuster subassembly comprising: a lower flange disposed about a lower portion of the central shaft and configured to maintain a vacuum within the central shaft; a lower bellows connected to the lower flange; an adjuster flange connected to the lower bellows and disposed about a central portion of the central shaft; a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed below the pedestal; an upper bellows connected to the adjuster flange; an upper flange connected to the upper bellows; a ring adjuster subassembly comprising: a plurality of ring adjuster pins connected to and extending perpendicularly from the adjuster plate, each of the plurality of ring adjuster pins being at a corresponding location on the adjuster plate adjacent and outwardly of a diameter of the pedestal, the plurality of ring adjuster pins being configured to contact an underside edge of the ring, the adjuster flange being coupled to at least three adjuster actuators to define a height and tilt of the ring relative to an upper surface of the pedestal; A pedestal assembly comprising: [Application Example 12] The pedestal assembly according to Application Example 11, wherein the sleeve is A cylindrical portion connected to the adjuster flange; a funnel portion connected to the cylindrical portion and the adjuster plate; A pedestal assembly comprising: [Application Example 13] The pedestal assembly according to Application Example 11, wherein the pedestal is a central top surface extending from a central axis of the pedestal to a central top diameter; an annular surface extending from the central upper surface diameter to an outer diameter of the annular surface, the annular surface being recessed from the central upper surface; Equipped with the central shaft is configured to have vertical movement extending from the central axis to a shaft diameter and transmitted to the pedestal; The ring is disposed adjacent the annular surface and extends outside the diameter of the pedestal at least a plurality of radial extensions of the ring. [Application Example 14] A pedestal assembly as described in Application Example 11, wherein the ring includes a carrier ring, the carrier ring having a plurality of tabs extending to an outer diameter of the ring, each tab being aligned with a corresponding ring adjuster pin. [Application Example 15] The pedestal assembly according to Application Example 1, wherein the ring includes a focus ring having a uniform outer diameter. [Application Example 16] A pedestal assembly as described in Application Example 11, wherein the adjuster actuator is connected to the adjuster flange in alignment with contact points of the adjuster flange, and the contact points are radially spaced equidistant from each other around a horizontal plane. [Example 17] A pedestal assembly, a pedestal for supporting a substrate, the pedestal having a central shaft that positions the pedestal at a height during operation; a ring configured to be disposed about an outer periphery of the pedestal and extending outside an outer diameter of the pedestal at a plurality of arms; 1. A ring adjuster subassembly comprising: an adjuster flange disposed about a central portion of the central shaft; a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed below the pedestal, the sleeve configured for independent vertical movement relative to the central shaft at a plurality of contact points, the plurality of contact points aligned with the plurality of arms; a ring adjuster subassembly connected to and extending perpendicularly from said adjuster plate, each of said ring adjuster pins being at a corresponding location on a corresponding arm of said adjuster plate adjacent and outwardly of a diameter of said pedestal, said ring adjuster pins being configured to contact an underside edge of said ring, said adjuster flanges being coupled to at least three adjuster actuators which align with said contact points to define a height and tilt of said ring relative to an upper surface of said pedestal; A pedestal assembly comprising: [Application Example 18] The pedestal assembly according to Application Example 17, wherein the sleeve is A cylindrical portion connected to the adjuster flange; a funnel portion connected to the cylindrical portion and the adjuster plate; A pedestal assembly comprising: [Application Example 19] The pedestal assembly according to Application Example 17, wherein the pedestal is a central top surface extending from a central axis of the pedestal to a central top diameter; an annular surface extending from the central upper surface diameter to an outer diameter of the annular surface, the annular surface being recessed from the central upper surface; Equipped with the central shaft is configured to have vertical movement extending from the central axis to a shaft diameter and transmitted to the pedestal; The ring is disposed adjacent the annular surface and extends outside the diameter of the pedestal at least a plurality of radial extensions of the ring. [Application Example 20] The pedestal assembly according to Application Example 17, wherein the ring includes a carrier ring or a focus ring.

Claims

1. 1. A pedestal assembly comprising: a pedestal for supporting a substrate, the pedestal having a central shaft that positions the pedestal at a height during operation; a ring configured to be disposed around an outer periphery of the pedestal; 1. A ring adjuster subassembly comprising: an adjuster flange assembly disposed about the central shaft; an adjuster plate disposed below the pedestal; a sleeve connected to the adjuster flange assembly and extending from the adjuster flange assembly to the adjuster plate; a plurality of ring adjuster pins connected to the adjuster plate along a plurality of radial lines emanating from a central axis of the central shaft, each of the plurality of ring adjuster pins oriented vertically upward from the adjuster plate so as to contact an underside of the ring; a plurality of adjuster actuators coupled to the adjuster flange assembly at a plurality of locations, each of the plurality of adjuster actuators configured to impart vertical movement to a corresponding location on the adjuster flange assembly to define a height and tilt of the ring relative to an upper surface of the pedestal; A pedestal assembly comprising:

2. 2. The pedestal assembly of claim 1, wherein the adjuster flange assembly comprises: a lower flange disposed about a lower portion of the central shaft and configured to maintain a vacuum within the central shaft; a lower bellows connected to the lower flange and disposed about the central shaft; an adjuster flange connected to the lower bellows, the adjuster flange connected to the plurality of adjuster actuators at the plurality of locations; a sleeve connected to the adjuster flange and extending to connect to the adjuster plate, the sleeve being disposed about the central shaft and configured to move independently of the central shaft; A pedestal assembly comprising:

3. 3. The pedestal assembly of claim 2, wherein the sleeve comprises: a cylindrical portion connected to the adjuster flange and disposed around the central shaft; a funnel portion connected to the cylindrical portion and the adjuster plate; A pedestal assembly comprising:

4. 3. The pedestal assembly of claim 2, further comprising: a bucket connected to the lower flange and connected to a pedestal actuator; A pedestal assembly comprising:

5. 3. The pedestal assembly of claim 2, further comprising: an upper bellows connected to the adjuster flange; an upper flange connected to the upper bellows and to a cylindrical portion of the sleeve; A pedestal assembly comprising:

6. 3. The pedestal assembly of claim 2, wherein vertical movement of said adjuster flange in said plurality of positions is transferred through said sleeve and said adjuster plate to said plurality of ring adjuster pins.

7. 2. The pedestal assembly of claim 1, wherein each of said plurality of ring adjuster pins is disposed on one of said plurality of radial lines and is radially spaced equidistant from another ring adjuster pin.

8. 2. The pedestal assembly of claim 1, wherein each of said plurality of ring adjuster pins is disposed on one of said plurality of radial lines, and said plurality of ring adjuster pins have non-uniform radial spacing.

9. 2. The pedestal assembly of claim 1, wherein each of said plurality of ring adjuster pins is disposed on one of said plurality of radial lines equidistant from said central axis.

10. 2. The pedestal assembly of claim 1, wherein the pedestal comprises: the top surface extending from a central axis and central shaft of the pedestal to a top diameter; an annular surface extending from the upper surface diameter to an outer diameter of the pedestal, the annular surface being recessed from the upper surface; Equipped with the central shaft extends along the central axis and is configured for vertical movement that is transmitted to the pedestal; The ring is disposed adjacent to and supported by the annular surface, a pedestal assembly.

11. 2. The pedestal assembly of claim 1, wherein the ring is a focus ring.

12. 2. The pedestal assembly of claim 1, wherein the ring is a carrier ring, the carrier ring including a plurality of tabs extending to a maximum outer diameter of the carrier ring, each of the plurality of tabs being aligned with a corresponding ring adjuster pin.

13. 2. The pedestal assembly of claim 1, wherein the adjuster plate includes a plurality of arms configured to connect to the plurality of ring adjuster pins.

14. 1. A pedestal assembly comprising: a lower flange disposed about a lower portion of the central shaft of the pedestal and configured to maintain a vacuum within the central shaft that positions the pedestal at an elevation; a lower bellows connected to the lower flange and disposed about the central shaft; an adjuster flange connected to the lower bellows, the adjuster flange being connected to a plurality of adjuster actuators at a plurality of locations; a sleeve connected to the adjuster flange, the sleeve being disposed about the central shaft and configured to move independently of the central shaft; an adjuster plate connected to the sleeve and disposed below the pedestal; a plurality of ring adjuster pins connected to the adjuster plate along a plurality of radial lines emanating from a central axis, the central axis extending along the central axis, each of the plurality of ring adjuster pins being oriented vertically upward from the adjuster plate so as to contact a lower surface of a ring configured to be disposed along an outer periphery of the pedestal; Equipped with the adjuster flange is configured to provide vertical movement at the plurality of positions to define a height and tilt of the ring relative to an upper surface of the pedestal.

15. 15. The pedestal assembly of claim 14, wherein the adjuster flange is connected to a plurality of adjuster actuators at the plurality of locations, each of the plurality of adjuster actuators configured to impart vertical movement to a corresponding location on the adjuster flange to define the height and tilt of the ring relative to an upper surface of the pedestal.

16. 15. The pedestal assembly of claim 14, wherein the sleeve comprises: a cylindrical portion connected to the adjuster flange and disposed around the central shaft; a funnel portion connected to the cylindrical portion and the adjuster plate; A pedestal assembly comprising:

17. 15. The pedestal assembly of claim 14, wherein vertical movement of said adjuster flange in said plurality of positions is transferred through said sleeve and said adjuster plate to said plurality of ring adjuster pins.

18. 15. The pedestal assembly of claim 14, wherein each of said plurality of ring adjuster pins is disposed on one of said plurality of radial lines and is radially spaced equidistant from another ring adjuster pin.

19. 15. The pedestal assembly of claim 14, wherein each of said plurality of ring adjuster pins is disposed on one of said plurality of radial lines, and said plurality of ring adjuster pins have non-uniform radial spacing.

20. 15. The pedestal assembly of claim 14, wherein each of said plurality of ring adjuster pins is disposed on one of said plurality of radial lines equidistant from said central axis.

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