Photodetectors and Radiation Detectors

Abstract

To provide a photodetector and a radiation detector, capable of improving characteristics.SOLUTION: According to an embodiment, the photodetector includes a first conductive layer, a second conductive layer, and an organic layer that is disposed between the first and the second conductive layers. The organic layer includes a first region, and a second region that is disposed between the first region and the second conductive layer. The first region includes a first compound that includes a first mother skeleton, and a second compound. The second region includes the first compound, and a third compound that includes the first mother skeleton and is different from the first compound. The second region does not include the second compound, or the concentration of the second compound in the second region is lower than the concentration of the second compound in the first region.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present invention relate to light detectors and radiation detectors. [Background technology]

[0002] There are photodetectors using a photoelectric conversion layer, etc. It is desirable to improve the detection characteristics of the photodetectors. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-85387 A Summary of the Invention [Problem to be solved by the invention]

[0004] SUMMARY OF THE PRESENT EMBODIMENTS Embodiments of the present invention provide photodetectors and radiation detectors that can have improved performance. [Means for solving the problem]

[0005] According to an embodiment of the present invention, a photodetector includes a first conductive layer, a second conductive layer, and an organic layer provided between the first conductive layer and the second conductive layer. The organic layer includes a first region and a second region provided between the first region and the second conductive layer. The first region includes a first compound including a first skeleton and a second compound. The second region includes the first compound and a third compound including the first skeleton and different from the first compound. The second region does not include the second compound, or the concentration of the second compound in the second region is lower than the concentration of the second compound in the first region. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating the photodetector according to the first embodiment. [Diagram 2]2(a) to 2(c) are schematic views illustrating materials of the photodetector according to the first embodiment. [Diagram 3] FIG. 3 is a graph illustrating the characteristics of a photodetector. [Figure 4] 4(a) to 4(c) are graphs illustrating the response characteristics of a photodetector. [Diagram 5] FIG. 5 is a circuit diagram illustrating the photodetector according to the first embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view illustrating the radiation detector according to the second embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view illustrating the radiation detector according to the second embodiment. [Figure 8] FIG. 8 is a schematic perspective view illustrating the radiation detector according to the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios of each part may be different depending on the drawing. In this specification and each drawing, elements similar to those described above with reference to the previous drawings are given the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) FIG. 1 is a schematic cross-sectional view illustrating the photodetector according to the first embodiment. 2(a) to 2(c) are schematic views illustrating materials of the photodetector according to the first embodiment. 1, a photodetector 110 according to the embodiment includes a first conductive layer 10, a second conductive layer 20, and an organic layer 30. The organic layer 30 is provided between the first conductive layer 10 and the second conductive layer 20.

[0009] The organic layer 30 includes a first region 31 and a second region 32. The second region 32 is provided between the first region 31 and the second conductive layer 20.

[0010] The direction from the second conductive layer 20 to the first conductive layer 10 is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0011] The first conductive layer 10, the second conductive layer 20, and the organic layer 30 are, for example, along the XY plane. For example, the first region 31 and the second region 32 are along the XY plane.

[0012] 2(a) to 2(c) illustrate examples of materials contained in the organic layer 30. The first region 31 includes a first compound CM1 (see FIG. 2(a)) and a second compound CM2 (see FIG. 2(b)). The first compound CM1 includes a first backbone S1.

[0013] In this example, the first compound CM1 includes chloroboron subphthalocyanine (SubPc), which corresponds to the first parent skeleton, and the second compound includes any of fullerene and fullerene derivatives.

[0014] For example, the first compound CM1 is p-type, and the second compound CM2 is n-type. The first region 31 is, for example, an organic semiconductor layer.

[0015] The second region 32 includes a first compound CM1 and a third compound CM3 (see FIG. 2(c)). The third compound CM3 is No. 1 parent skeleton S1. The third compound CM3 is different from the first compound CM1.

[0016] In this example, the third compound CM3 comprises pentafluorophenoxy boron subphthalocyanine (F5-SubPc).

[0017] The second region 32 does not include the second compound CM2. Or, the concentration of the second compound CM2 in the second region 32 is lower than the concentration of the second compound CM2 in the first region 31. For example, the second region 32 does not substantially include the second compound CM2. The second region 32 may function as, for example, a hole transport layer.

[0018] As shown in FIG. 1, for example, a detection circuit 70 is provided. The detection circuit 70 is electrically connected to the first conductive layer 10 and the second conductive layer 20. The electrical connection is performed, for example, by a first wiring 71 connected to the first conductive layer 10 and a second wiring 72 connected to the second conductive layer 20. The detection circuit 70 includes, for example, a charge amplifier. The first conductive layer 10 (first wiring 71) and the second conductive layer 20 (second wiring 72) are electrically connected to the input of the charge amplifier. The output of the charge amplifier becomes an output signal OS. The output signal OS changes according to the incident light 81. In this way, the detection circuit 70 can output a signal (output signal OS) corresponding to the light 81 incident on the photodetector 110.

[0019] For example, light 81 is incident on the organic layer 30 through the second conductive layer 20. The light 81 passes through the second region 32 and reaches the first region 31. In the first region 31, a mobile charge is generated by the energy of the incident light 81. This charge is extracted by applying a bias voltage between the first conductive layer 10 and the second conductive layer 20. The first region 31 functions as, for example, a photoelectric conversion layer.

[0020] In the embodiment, the second region 32 as described above is provided. It has been found that this can suppress the leakage current. It has been found that the provision of such a second region 32 can provide good time response. An example of the evaluation results of the characteristics of the photodetector will be described below.

[0021] FIG. 3 is a graph illustrating the characteristics of a photodetector. 3 illustrates the measurement results of the signal obtained when the bias voltage applied between the first conductive layer 10 and the second conductive layer 20 is changed in a state in which light 81 is not incident. The horizontal axis of FIG. 3 is the bias voltage Vb. The vertical axis of FIG. 3 is the leak parameter P1. The leak parameter corresponds to the magnitude of the obtained signal. A large leak parameter P1 corresponds to a large leak current. The leak parameter P1 corresponds to the apparent quantum efficiency.

[0022] 3 shows the characteristics of the photodetectors 110, 118 and 119. In the photodetector 110, the first compound C 1 and a second region 32 including the third compound CM3 is provided. In the photodetector 118, the second region 32 is not provided. In the photodetector 119, the second region 32 includes only the first compound CM1 and does not include the third compound CM3.

[0023] 3, the leak parameter P1 is large in the photodetector 118. The leak parameter P1 in the photodetector 119 is smaller than that in the photodetector 118. The leak parameter P1 obtained in the photodetector 110 is smaller than that in the photodetector 119. In this way, according to the embodiment, the leak current can be suppressed. As a result, high detection sensitivity can be obtained.

[0024] As described above, by providing the second region 32 including the first compound CM1 and the third compound CM3, the leakage current can be suppressed.

[0025] In the case of the photodetector 119 in which the second region 32 does not include the third compound CM3, for example, the uniformity of the structure in the second region 32 is considered to be high. For example, the first compound CM1 is packed at a high density. This increases the conductivity. As a result, it is considered that the leakage current is large.

[0026] On the other hand, in the case of the photodetector 110 in which the second region 32 includes the first compound CM1 and the third compound CM3, it is considered that the uniformity of the structure in the second region 32 is reduced. For example, the second region 32 becomes bulky. For example, when the third compound CM3 different from the first compound CM1 is provided, the packing property is reduced. This is considered to result in a reduction in conductivity and a reduction in leakage current.

[0027] 4(a) to 4(c) are graphs illustrating the response characteristics of a photodetector. The horizontal axis of these figures is time tm. The vertical axis of these figures is the detected signal Sg1. FIG. 4(a) corresponds to photodetector 118. FIG. 4(b) corresponds to photodetector 119. FIG. 4(c) corresponds to photodetector 110. In these measurements, a light pulse is irradiated onto the photodetector while time tm is from 0 to 5 μs. A change in signal Sg1 corresponding to the light pulse is observed.

[0028] As shown in FIG. 4(a), photodetector 118 has good response characteristics both when on and when off. In contrast, as shown in FIG. 4(b), photodetector 119 has poor response characteristics. In particular, the time it takes for signal Sg1 to return to its original state during the off state is significantly long. As shown in FIG. 4(c), photodetector 110 has good response characteristics both when on and when off. Good high-speed response is obtained.

[0029] In the case of the photodetector 119 in which the second region 32 does not contain the third compound CM3, for example, it is considered that the carrier blocking property is high in the second region 32. This is considered to be due to the fact that the second region 32 contains only the first compound CM1 and therefore has a uniform structure.

[0030] On the other hand, in the case of the photodetector 110 in which the second region 32 includes the first compound CM1 and the third compound CM3, it is considered that the uniformity of the structure in the second region 32 is low. This leads to a low blocking property of carriers. This leads to efficient movement of the accumulated carriers to the outside, and it is considered that a high-speed off characteristic is obtained.

[0031] In the embodiment, it is preferable that the first region 31 does not contain the third compound CM3. Alternatively, it is preferable that the concentration of the third compound CM3 in the first region 31 is lower than the concentration of the third compound CM3 in the second region 32. For example, the first region 31 does not substantially contain the third compound CM3. This makes it easier to obtain, for example, high conversion efficiency.

[0032] For example, the first region 31 functions as a photoelectric conversion layer. For efficient photoelectric conversion, the thickness of the first region 31 is set to be relatively thick. If the first compound CM1 and the third compound CM3 are provided in the thick first region 31, it becomes difficult for carriers in the first region 31 to move within a short time. Since the third compound CM3 is substantially not provided in the first region 31, it becomes easier for carriers to reach the conductive layer before disappearing. This allows high conversion efficiency to be obtained.

[0033] As shown in FIG. 1, the thickness of the first region 31 in the first direction (Z-axis direction) from the second conductive layer 20 to the first conductive layer 10 is defined as a first thickness t1. The thickness of the second region 32 in the first direction is defined as a second thickness t2. The first thickness t1 is thicker than the second thickness t2. This allows high conversion efficiency to be obtained. The thin second thickness t2 allows, for example, high-speed responsiveness (good on-state characteristics and good off-state characteristics) to be obtained.

[0034] In the embodiment, the first thickness t1 is preferably, for example, 5 times to 200 times the second thickness t2. The first thickness t1 may be, for example, 8 times to 80 times the second thickness t2.

[0035] In the embodiment, the first thickness t1 is preferably, for example, not less than 200 nm and not more than 2000 nm, and the second thickness t2 is, for example, not less than 2 nm and not more than 100 nm.

[0036] The first compound CM1 and the second compound CM2 may be mixed with each other in the first region 31. The first region 31 has, for example, a bulk heterojunction structure.

[0037] In the first region 31, the weight ratio of the first compound CM1 to the second compound CM2 is preferably, for example, 0.3 or more and 0.7 or less. In the second region 32, the weight ratio of the first compound CM1 to the third compound CM3 is preferably, for example, 0.3 or more and 0.7 or less.

[0038] In an embodiment, the first compound CM1 may be a compound including a first backbone S1 or a derivative of the compound. As shown in Fig. 2(a), the derivative includes a first group A1 bonded to the first backbone S1. The first group A1 includes at least one selected from the group consisting of hydrogen, halogen, and organic group. In the example of Fig. 2(a), the first group A1 is chlorine.

[0039] The third compound CM3 is, for example, a derivative of a compound including a first base skeleton S1. As shown in FIG. 2(c), the derivative includes a second group A2 bonded to the first base skeleton S1. The molecular weight of the first base skeleton S1 is larger than the molecular weight of the first group A1 and larger than the molecular weight of the second group A2.

[0040] In one example, when the first group A1 is a halogen atom, the second group A2 includes an organic group. The number of carbon atoms included in the organic group is 5 or more. In one example, the molecular weight of the second group A2 is the molecular weight of the first group A1. amount In one example, the size of the second group A2 is greater than the size of the first group A1, which makes the third compound CM3 bulkier than the first compound CM1.

[0041] For example, the first backbone S1 includes a benzene ring. The third compound CM3 includes a second group A2 bonded to the first backbone S1. The second group A2 includes a benzene ring. In this case, the first group A1 does not include a benzene ring. With this configuration, the third compound CM3 is bulkier than the first compound CM1.

[0042] When the second group A2 includes a benzene ring, the second group A2 may include a fluorine atom bonded to the benzene ring. With this structure, the third compound CM3 becomes bulky.

[0043] When the second group A2 includes a benzene ring, the benzene ring may be bonded to the first backbone S1 via an oxygen atom, which provides a bulky structure. The benzene ring may be bonded to the first backbone S1 via a sulfur atom.

[0044] In one example, the first compound CM1 includes chloro boron subphthalocyanine and the third compound CM3 includes pentafluorophenoxy boron subphthalocyanine.

[0045] In the embodiment, the first conductive layer 10 includes, for example, a metal. The metal may include, for example, at least one selected from the group consisting of Al, Ag, and Au. The second conductive layer 20 may include, for example, an oxide of a metal. The first conductive layer 10 may include, for example, ITO (Indium Tin Oxide). For example, the light transmittance of the second conductive layer 20 is higher than the light transmittance of the first conductive layer 10.

[0046] 1, the photodetector 110 may include a substrate 50. The second conductive layer 20 is provided between the substrate 50 and the first conductive layer 10. The substrate 50 may include, for example, a resin or glass. The substrate 50 may also be, for example, an organic film.

[0047] FIG. 5 is a circuit diagram illustrating the photodetector according to the first embodiment. 5 illustrates a charge amplifier 75 provided in the detection circuit 70. A first wiring 71 is electrically connected to one of the two input terminals of the charge amplifier 75. A second wiring 72 is electrically connected to the other of the two input terminals of the charge amplifier 75. This electrically connects the charge amplifier 75 to the first conductive layer 10 and the second conductive layer 20. A capacitance 76 is connected between the negative input of the charge amplifier 75 and the output terminal of the charge amplifier 75. For example, a voltage according to the charge generated between the first conductive layer 10 and the second conductive layer 20 is obtained as an output signal OS.

[0048] In the charge amplifier 75, a resistor may be provided in parallel with the capacitance 76. An input terminal for a reference voltage may further be provided. Radiation may be detected in the structure including the first conductive layer 10, the second conductive layer 20 and the organic layer 30. Inspection The detector 110 may be a radiation detector.

[0049] Second embodiment The second embodiment relates to a radiation detector.

[0050] FIG. 6 is a schematic cross-sectional view illustrating the radiation detector according to the second embodiment. 6, the radiation detector 120 according to the embodiment includes the photodetector 110 according to the first embodiment and a scintillator layer 40. The second conductive layer 20 is between the scintillator layer 40 and the organic layer 30. In this example, a base 50 is provided. The base 50 is provided between the scintillator layer 40 and the second conductive layer 20. The base 50 may be considered to be provided in the photodetector 110.

[0051] For example, radiation 82 is incident on the scintillator layer 40. Light 81 corresponding to the radiation 82 is generated in the scintillator layer 40. The light 81 is incident on the organic layer 30. An electrical signal corresponding to the radiation 82 is obtained. By providing the scintillator layer 40, the radiation 82 can be effectively detected.

[0052] The radiation 82 is, for example, arbitrary. The radiation 82 may include, for example, β rays. For example, radiation 82 that is discrete in time may be incident on the scintillator layer 40. In the embodiment, photoelectric conversion with good response characteristics is possible. The radiation 82 that is discrete in time can be efficiently detected.

[0053] The scintillator layer 40 may include, for example, CsI (Tl). For example, the scintillator layer 40 may include iodine, cesium, and thallium. The scintillator layer 40 may include a plastic scintillator. For example, the plastic scintillator may include at least one selected from the group consisting of polystyrene, polyvinyltoluene, and polyphenylbenzene.

[0054] FIG. 7 is a schematic cross-sectional view illustrating the radiation detector according to the second embodiment. As shown in FIG. 7, the radiation detector 121 according to this embodiment is further provided with a sealing member 60. The base 50 and the sealing member 60 are made of, for example, glass. The outer edge of the sealing member 60 is joined to the outer edge of the base 50. The first conductive layer 10, the second conductive layer 20, and the organic layer 30 are provided in a space surrounded by the base 50 and the sealing member 60. The first conductive layer 10, the second conductive layer 20, and the organic layer 30 are hermetically sealed by the base 50 and the sealing member 60. This makes it easier to obtain stable characteristics. High reliability can be obtained.

[0055] A space 65 is provided between the first conductive layer 10, the second conductive layer 20, and the organic layer 30, and the sealing member 60. For example, an inert gas (such as nitrogen gas) is sealed in this space 65. The sealing member 60 may be provided in the photodetector 110.

[0056] FIG. 8 is a schematic perspective view illustrating the radiation detector according to the second embodiment. In FIG. 8, for ease of viewing, some of the elements included in the radiation detector 122 are depicted separated from one another.

[0057] In the radiation detector 122, a plurality of second conductive layers 20 are provided. The plurality of second conductive layers 20 are arranged along a plane (e.g., an XY plane) intersecting the first direction (Z-axis direction). The plurality of second conductive layers 20 are arranged, for example, along the X-axis direction and the Y-axis direction. The plurality of second conductive layers 20 are arranged, for example, in a matrix shape. In the radiation detector 122, an image corresponding to radiation 82 is obtained. The configuration of the photodetector 110 described in relation to the first embodiment can be applied to the radiation detector 122.

[0058] The embodiment may include the following configurations (e.g., technical solutions). (Configuration 1) A first conductive layer; A second conductive layer; an organic layer provided between the first conductive layer and the second conductive layer; Equipped with the organic layer includes a first region and a second region provided between the first region and the second conductive layer; the first region includes a first compound including a first skeleton and a second compound; the second region includes the first compound and a third compound that includes the first skeleton and is different from the first compound; The second region does not contain the second compound, or the concentration of the second compound in the second region is lower than the concentration of the second compound in the first region.

[0059] (Configuration 2) The optical detector of configuration 1, wherein the first region does not contain the third compound, or the concentration of the third compound in the first region is lower than the concentration of the third compound in the second region.

[0060] (Configuration 3) the first compound is of the p-type; 3. The photodetector of configuration 1 or 2, wherein the second compound is n-type.

[0061] (Configuration 4) the first compound comprises a first group attached to the first mother skeleton; the third compound comprises a second group attached to the first backbone; The molecular weight of the second group is the molecular weight of the first group. amount 4. The photodetector according to any one of configurations 1 to 3, wherein

[0062] (Configuration 5) the first compound comprises a first group attached to the first mother skeleton; the third compound comprises a second group attached to the first backbone; the first group is a halogen atom, The photodetector according to any one of configurations 1 to 3, wherein the second group includes an organic group.

[0063] (Configuration 6) the first mother skeleton includes a benzene ring, the third compound comprises a second group attached to the first backbone; 4. The photodetector of any one of configurations 1 to 3, wherein the second group includes a benzene ring.

[0064] (Configuration 7) 7. The photodetector of claim 6, wherein the second group comprises a fluorine bonded to the benzene ring.

[0065] (Configuration 8) 8. The photodetector of claim 6 or 7, wherein the benzene ring is bonded to the first mother skeleton via an oxygen.

[0066] (Configuration 9) The first compound comprises a chloroboron subphthalocyanine; 4. The photodetector of any one of configurations 1 to 3, wherein the third compound includes pentafluorophenoxy boron subphthalocyanine.

[0067] (Configuration 10) 10. The photodetector of claim 9, wherein the second compound includes any one of a fullerene and a fullerene derivative.

[0068] (Configuration 11) A photodetector according to any one of configurations 1 to 10, wherein a first thickness of the first region in a first direction from the second conductive layer to the first conductive layer is thicker than a second thickness of the second region in the first direction.

[0069] (Configuration 12) 12. The photodetector of claim 11, wherein the first thickness is greater than or equal to 5 times and less than or equal to 200 times the second thickness.

[0070] (Configuration 13) The first thickness is equal to or greater than 200 nm and equal to or less than 2000 nm, 12. The photodetector of claim 11, wherein the second thickness is greater than or equal to 2 nm and less than or equal to 100 nm.

[0071] (Configuration 14) 14. The photodetector according to any one of configurations 1 to 13, wherein the first compound and the second compound are mixed in the first region.

[0072] (Configuration 15) 15. The photodetector according to any one of configurations 1 to 14, wherein in the first region, a weight ratio of the first compound to the second compound is not less than 0.3 and not more than 0.7.

[0073] (Configuration 16) 16. The photodetector according to any one of configurations 1 to 15, wherein in the second region, a weight ratio of the first compound to the third compound is not less than 0.3 and not more than 0.7.

[0074] (Configuration 17) 17. The photodetector of any one of configurations 1 to 16, wherein the second conductive layer has a higher light transmittance than the first conductive layer.

[0075] (Configuration 18) A photodetector according to any one of configurations 1 to 17, A scintillator layer; Equipped with The second conductive layer is between the scintillator layer and the organic layer.

[0076] (Configuration 19) 19. The radiation detector of claim 18, further comprising a substrate disposed between the scintillator layer and the second conductive layer.

[0077] (Configuration 20) 20. The radiation detector according to configuration 18 or 19, wherein radiation that is discrete in time can be incident on the scintillator.

[0078] (Configuration 21) A first conductive layer; A second conductive layer; an organic layer provided between the first conductive layer and the second conductive layer; Equipped with the organic layer includes a first region and a second region provided between the first region and the second conductive layer; the first region includes a first compound including a first skeleton and a second compound; the second region includes the first compound and a third compound that includes the first skeleton and is different from the first compound; The second region does not contain the second compound, or the concentration of the second compound in the second region is lower than the concentration of the second compound in the first region.

[0079] According to the embodiment, it is possible to provide a photodetector and a radiation detector with improved characteristics.

[0080] In this specification, the electrically connected state includes a state in which two conductors are in direct contact with each other. The electrically connected state includes a state in which two conductors are connected by another conductor (e.g., wiring, etc.). The electrically connected state includes a state in which a switching element (transistor, etc.) is provided in the path between the two conductors, and a state in which a current flows through the path between the two conductors is formed.

[0081] In this specification, "vertical" and "parallel" do not only mean strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may mean substantially vertical and substantially parallel.

[0082] The above describes the embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element, such as a conductive layer, an organic layer, a compound, and a scintillator layer, contained in a photodetector or radiation detector are included in the scope of the present invention as long as a person skilled in the art can carry out the present invention in a similar manner and obtain similar effects by appropriately selecting them from the known range.

[0083] Furthermore, any combination of two or more elements of each of the specific examples, within the scope of technical feasibility, is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0084] In addition, all photodetectors and radiation detectors that can be implemented by a person skilled in the art by appropriately modifying the design based on the photodetectors and radiation detectors described above as the embodiments of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0085] In addition, within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0086] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0087] 10...first conductive layer, 20...second conductive layer, 30...organic layer, 31, 32...first and second regions, 40...scintillator layer, 50...base, 60...sealing member, 65...space, 70...detection circuit, 71, 72...first and second wiring, 75...charge amplifier, 76...capacitance, 81...light, 82...radiation, 110, 118, 119...photodetector, 120-122...radiation detector, A1, A2...first and second groups, CM1-CM3...first to third compounds, OS...output signal, P1...leak parameter, S1...mother skeleton, Sg1...signal, Vb...bias voltage, t1, t2...first and second thicknesses, tm...time

Claims

1. A first conductive layer; A second conductive layer; and an organic layer provided between the first conductive layer and the second conductive layer; Equipped with the organic layer includes a first region and a second region provided between the first region and the second conductive layer; the first region includes a first compound and a second compound, the second region includes the first compound and a third compound, the first compound comprises a chloroboron subphthalocyanine; the third compound comprises pentafluorophenoxy boron subphthalocyanine; the second compound includes any one of a fullerene and a fullerene derivative, the second region does not include the second compound; A photodetector, wherein charges generated in response to light incident on the organic layer are extracted by applying charges to the first conductive layer and the second conductive layer.

2. The photodetector of claim 1 , wherein the first region is free of the third compound.

3. 3. The photodetector of claim 1, wherein a first thickness of the first region in a first direction from the second conductive layer to the first conductive layer is greater than a second thickness of the second region in the first direction.

4. A photodetector according to any one of claims 1 to 3; A scintillator layer; Equipped with The second conductive layer is between the scintillator layer and the organic layer.

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