SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Abstract

To provide a substrate treatment method that can suppress corrosion of a conductive material on the surface of a substrate by supplying a liquid having a reduced dissolved oxygen concentration onto the substrate.SOLUTION: A substrate treatment method replaces oxygen dissolved in liquid with an inert gas by dissolving the inert gas in the liquid with saturation solubility or more, reduces the pressure of the liquid in which the inert gas is dissolved, thereby generating bubbles of the inert gas in the liquid, and treats a substrate while supplying the liquid containing bubbles onto the surface of the substrate.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a substrate processing method and substrate processing apparatus for processing substrates such as wafers, PCB wiring boards, printed wiring boards, and square substrates, and more particularly to a substrate processing method and substrate processing apparatus for processing a substrate while suppressing corrosion of conductive material exposed on the surface of the substrate. [Background technology]

[0002] The precision required for each process in the manufacturing of recent semiconductor devices has already reached the order of several nm, and it is expected that in the future precision on the order of angstroms will be required. Chemical mechanical polishing (CMP) also requires maintaining the dimensions of elements, wiring, etc. on the order of several nm over the entire surface of the wafer, and this requirement is expected to reach the order of angstroms in the future. This is because dimensional changes in elements and wiring affect the operating performance (operating voltage and current) of the device.

[0003] Therefore, during chemical mechanical polishing (CMP), not only is it necessary to suppress dishing and erosion, but it is also necessary to remove the slurry and polishing products attached to the substrate surface during the cleaning process after polishing, and to prevent corrosion of the device components, especially the conductive materials used in via contacts and wiring. Here, the conductive materials targeted by CMP include conventional wiring metal materials such as tungsten (W) and copper (Cu), and barrier metals such as tantalum / tantalum nitride (Ta / TaN) and titanium / titanium nitride (Ti / TiN). Recently, in addition to these, a wide range of conductive materials such as cobalt (Co), ruthenium (Ru), molybdenum (Mo), and even carbon nanotubes (CNTs) and graphene are being used in semiconductor devices. For some materials, the pH range at which corrosion occurs is wider than that of conventional Cu and W, and the requirement for corrosion prevention is becoming more stringent.

[0004] In addition, typical modes of wiring corrosion occurring during CMP and substrate cleaning include chemical corrosion caused by a chemical reaction between an etchant in a general liquid and a conductive material, galvanic corrosion caused by an electromotive force generated between different conductive materials electrically connected in a liquid, photocorrosion caused by an electromotive force generated when a specific device such as a P / N junction is irradiated with light, and electrostatic corrosion caused by static electricity generated on the substrate due to friction between the polishing pad and the substrate surface or the propagation of static electricity caused by the device. In any corrosion mode, etchant components present in liquids such as slurry, cleaning liquid, and rinse water contribute to corrosion. Typical etchant components include pH adjusters, oxidizers, and chelating agents in the slurry and cleaning liquid. Furthermore, oxygen in the cleaning module and substrate transport device can also be cited as an etchant. This is because oxygen dissolved in the cleaning liquid or rinse water contributes directly or in combination with the etchant components of the slurry or cleaning liquid to further promote the corrosion of the conductive material.

[0005] Therefore, in order to suppress corrosion, the slurry and cleaning solution are supplemented with anticorrosive components and components that form protective films such as oxide films on the conductive material surface, in addition to the above components. On the other hand, regarding the removal of oxygen in the atmosphere, ultrapure water used in semiconductor cleaning is usually supplied to the cleaning module in a state where the dissolved oxygen has been forcibly removed by degassing or the like, but the oxygen in the atmosphere dissolves very easily in the ultrapure water and returns to the dissolved oxygen level before degassing in an extremely short time. Therefore, the atmosphere in the cleaning module is usually purged with an inert gas such as N2 gas to reduce the oxygen concentration in the atmosphere and reduce the amount of oxygen dissolved in the cleaning solution and rinse water on the substrate. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2005-268287 A Summary of the Invention [Problem to be solved by the invention]

[0007] However, the above method using inert gas may consume a large amount of inert gas depending on the region to be purged, which may lead to an increase in manufacturing costs. In addition, if the region to be purged is large or if a completely sealed space cannot be formed due to the structure, the oxygen concentration may not be sufficiently reduced. In such cases, a method may be used in which the region to be purged is physically limited to the vicinity of the substrate using a plate or the like, but this plate interferes with other cleaning mechanisms and inhibits the cleaning operation, limiting the installation of other cleaning mechanisms and hindering the improvement of cleaning performance. Therefore, in order to suppress chemical corrosion due to an oxygen atmosphere in the cleaning process, a method is required that can sufficiently reduce the oxygen concentration at low cost while maintaining or improving the cleaning performance.

[0008] Patent Document 1 discloses a cleaning device that uses rinse water in which nitrogen is dissolved at a concentration equal to or greater than the saturation concentration. This rinse water contains almost no oxygen, and is therefore expected to prevent corrosion of conductive materials on the substrate surface. However, in order to prevent air bubbles from forming in the rinse water, the rinse water in which nitrogen is dissolved is degassed before being supplied to the substrate surface, so oxygen in the surrounding atmosphere is likely to dissolve in the degassed rinse water, and therefore there is a risk that the corrosion of conductive materials on the substrate surface will not be sufficiently suppressed.

[0009] Therefore, the present invention provides a substrate processing method and a substrate processing apparatus capable of suppressing corrosion of the conductive material on the substrate surface by supplying a liquid with a reduced dissolved oxygen concentration onto the substrate. [Means for solving the problem]

[0010] In one aspect, there is provided a substrate processing method for processing a substrate having a conductive material exposed on a surface thereof, the method comprising dissolving an inert gas in a liquid to a level equal to or greater than its saturation solubility, thereby replacing oxygen dissolved in the liquid with the inert gas, reducing the pressure of the liquid in which the inert gas has been dissolved, thereby generating bubbles of the inert gas in the liquid, and supplying the liquid containing the bubbles to the surface of the substrate while processing the substrate.

[0011] In one embodiment, the bubbles have a diameter of 1 μm or less. In one embodiment, the saturated solubility of the inert gas is the saturated solubility under conditions of a temperature of 20° C. and a pressure of 1 atmosphere. In one aspect, the substrate processing method further includes degassing the liquid before dissolving the inert gas in the liquid. In one aspect, the method for processing a substrate further includes cooling the liquid before dissolving the inert gas in the liquid. In one embodiment, the temperature of the cooled liquid is within the range of 5°C to 20°C.

[0012] In one embodiment, the substrate processing method further includes repeating a step of dissolving the inert gas in the liquid to above its saturation solubility while circulating the liquid through a liquid tank, and a step of generating bubbles of the inert gas in the liquid. In one embodiment, the inert gas is nitrogen gas or a noble gas. In one embodiment, the liquid is pure water or a chemical liquid.

[0013] In one aspect, the substrate processing method further includes supplying the liquid containing the bubbles onto the surface of the substrate while the substrate is being transported. In one aspect, the processing of the substrate is a cleaning process, which is carried out in a cleaning apparatus, the substrate is loaded into the cleaning apparatus with the liquid containing the bubbles present on its surface, and the cleaned substrate is loaded out of the cleaning apparatus while still wet. In one aspect, the processing of the substrate is a cleaning process, and the substrate processing method further includes drying the cleaned substrate in a drying apparatus, the substrate being loaded into the drying apparatus with the liquid containing the bubbles present on its surface, and the dried substrate being loaded out of the drying apparatus in a dry state. In one aspect, the processing of the substrate is a cleaning process, and the substrate processing method further includes polishing the substrate by rubbing the substrate against a polishing surface while supplying a polishing liquid onto the polishing surface, and the cleaning process is performed after polishing the substrate.

[0014] In one aspect, there is provided a substrate processing apparatus for processing a substrate having a conductive material exposed on its surface, the substrate processing apparatus including: an inert gas dissolving device that dissolves an inert gas in a liquid to above its saturation solubility, thereby replacing oxygen dissolved in the liquid with the inert gas; a bubble generating device that generates bubbles of the inert gas in the liquid by reducing the pressure of the liquid in which the inert gas has been dissolved; a processing module that processes the substrate while supplying the liquid containing the bubbles to the surface of the substrate; and an inert dissolving liquid supply line that sends the liquid containing the bubbles to the processing module.

[0015] In one embodiment, the bubble generator is configured to generate bubbles having a diameter of 1 μm or less. In one embodiment, the saturated solubility of the inert gas is the saturated solubility under conditions of a temperature of 20° C. and a pressure of 1 atmosphere. In one embodiment, the substrate processing apparatus further includes a degassing device that degasses the liquid before the inert gas is dissolved in the liquid. In one embodiment, the substrate processing apparatus further includes a liquid cooling device that cools the liquid before the inert gas is dissolved in the liquid. In one embodiment, the liquid cooling device is configured to cool the liquid to a temperature within a range of 5°C to 20°C before dissolving the inert gas in the liquid.

[0016] In one embodiment, the substrate processing apparatus further includes a liquid tank arranged upstream of the inert gas dissolving device, a pump that sends the liquid stored in the liquid tank to the inert gas dissolving device, and a circulation line that extends from a position downstream of the bubble generating device to the liquid tank and returns the liquid containing the bubbles to the liquid tank. In one embodiment, the inert gas is nitrogen gas or a noble gas. In one embodiment, the liquid is pure water or a chemical liquid. In one aspect, the substrate processing apparatus further includes a substrate transport device that transports the substrate, the substrate transport device including a robot hand that supports the substrate, and a shower nozzle that is disposed above the robot hand and connected to the inert solvent supply line. In one embodiment, the substrate processing apparatus further includes a CMP apparatus that polishes the substrate by sliding the substrate against the polishing surface while supplying a polishing liquid onto the polishing surface, and the processing module is a cleaning apparatus that cleans the substrate after the polishing operation of the CMP apparatus. In one aspect, there is provided a computer-readable recording medium having recorded thereon a program for causing a computer to execute an operation of issuing an instruction to a substrate processing apparatus to cause the substrate processing apparatus to execute the substrate processing method. Effect of the Invention

[0017] According to the present invention, since the inert gas is dissolved in the liquid to a level equal to or greater than the saturation solubility, and since the inert gas bubbles remain even after the supply, the oxygen concentration in the liquid is maintained at a very low level, so that corrosion of the conductive material caused by oxygen can be suppressed. In addition, since it is possible to omit the structure for purging oxygen from the surrounding atmosphere with an inert gas such as nitrogen gas, it is possible to reduce the amount of inert gas used, and thus the manufacturing cost can be reduced. [Brief description of the drawings]

[0018] [Figure 1] 1 is a schematic diagram illustrating an embodiment of a substrate processing apparatus. [Diagram 2] FIG. 13 is a schematic view showing another embodiment of the substrate processing apparatus. [Diagram 3] 3(a) to 3(c) are side views illustrating one embodiment of a substrate transport apparatus. [Figure 4] FIG. 13 is a schematic view showing still another embodiment of the substrate processing apparatus. [Diagram 5] 1 is a table showing the solubilities of oxygen and representative inert gases. [Figure 6] FIG. 13 is a schematic view showing still another embodiment of the substrate processing apparatus. [Figure 7] FIG. 13 is a schematic view showing still another embodiment of the substrate processing apparatus. [Figure 8] FIG. 13 is a schematic view showing still another embodiment of the substrate processing apparatus. [Figure 9] FIG. 13 is a schematic view showing still another embodiment of the substrate processing apparatus. [Figure 10] FIG. 13 is a schematic view showing still another embodiment of the substrate processing apparatus. [Figure 11] FIG. 13 is a schematic view showing still another embodiment of the substrate processing apparatus. [Figure 12] FIG. 1 is a perspective view showing a schematic diagram of an embodiment of a CMP apparatus. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram showing one embodiment of a substrate processing apparatus. The substrate processing apparatus of this embodiment is an apparatus for cleaning and drying substrates used in the manufacture of semiconductor devices, such as wafers, PCB wiring boards, printed wiring boards, and square boards. A typical example of a substrate is a circular wafer. The substrates used in the embodiment described below are circular, but the shape of the substrate to be processed is not limited to circular, and may have other shapes (e.g., rectangular or polygonal). The substrate to be cleaned is, for example, a substrate polished by a CMP (chemical mechanical polishing) apparatus.

[0020] The substrate to be processed has a conductive material exposed on its surface. The conductive material is wiring, contacts, plugs, etc. that constitute a semiconductor device. Examples of the conductive material include metal materials such as tungsten (W), copper (Cu), tantalum / tantalum nitride (Ta / TaN), titanium / titanium nitride (Ti / TiN), cobalt (Co), ruthenium (Ru), and molybdenum (Mo). In addition to these metal materials, carbon nanotubes (CNTs) or graphene may be exposed on the surface of the substrate. The substrate processing apparatus according to the embodiment described below is used for cleaning and drying the surface of the substrate while suppressing corrosion of the conductive material exposed on the surface of the substrate due to oxygen.

[0021] As shown in FIG. 1, the substrate processing apparatus of this embodiment includes two cleaning apparatuses 1A, 1B for cleaning the surface of a substrate W, a drying apparatus 3 for drying the cleaned substrate W, a substrate transport apparatus 5A for transporting the substrate W between the cleaning apparatus 1A and the cleaning apparatus 1B, a substrate transport apparatus 5B for transporting the substrate W between the cleaning apparatus 1B and the drying apparatus 3, liquid supply apparatuses 6A, 6B for supplying at least one of pure water and a chemical liquid to the cleaning apparatuses 1A, 1B and the drying apparatus 3, and an operation control unit 7 for controlling the operation of the substrate processing apparatus.

[0022] The cleaning apparatuses 1A, 1B and the drying apparatus 3 are examples of processing modules for processing the substrate W. In the embodiment shown in FIG. 1, two cleaning apparatuses 1A, 1B are provided, but the number of cleaning apparatuses is not limited to this embodiment, and only one cleaning apparatus may be provided, or three or more cleaning apparatuses may be provided. The chemical liquid used in this embodiment is a chemical liquid for cleaning the substrate W, and is, for example, a mixture of cleaning liquid components such as a chelating agent and a pH adjuster in pure water. Alternatively, in one embodiment, electrolytic ion water, diluted hydrochloric acid water, or ammonia water may be used.

[0023] The operation control unit 7 is composed of at least one computer. The operation control unit 7 includes a storage device 7a in which a program is stored, and a calculation device 7b that executes calculations according to instructions included in the program. The storage device 7a includes a main storage device such as a random access memory (RAM), and an auxiliary storage device such as a hard disk drive (HDD) or a solid state drive (SSD). Examples of the calculation device 7b include a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). However, the specific configuration of the operation control unit 7 is not limited to this embodiment.

[0024] In one embodiment, the operation control unit 7 may have a memory storing a program, a CPU (Central Processing Unit) that executes the program in the memory, and a control module that is realized by the CPU executing the program. The control module and the control unit are configured to be able to communicate with a host controller (not shown) that controls the substrate processing apparatus and other related apparatuses, and can exchange data with a database held by the host controller. Here, the recording medium constituting the memory stores various programs such as various setting data and processing programs. As the recording medium, known recording media such as computer-readable memories such as ROM and RAM, hard disks, CD-ROMs, DVD-ROMs, and flexible disks, as well as disk-shaped or stick-shaped recording media that can be freely inserted and removed, can be used.

[0025] In the following description, the two cleaning devices 1A, 1B are referred to as the primary cleaning device 1A and the secondary cleaning device 1B. Each of the primary cleaning device 1A and the secondary cleaning device 1B is configured to clean the surface of the substrate W by bringing a cleaning tool into sliding contact with the surface of the substrate W in a state where liquid is present on the substrate W. More specifically, the primary cleaning device 1A is a roll-type cleaning device that scrubs and cleans both sides of the substrate W by holding and rotating the substrate W with a substrate holding part (not shown) and pressing the cylindrical roll cleaning tools 10, 11 against both sides of the substrate W while rotating the roll cleaning tools. The secondary cleaning device 1B is a pen-type cleaning device that scrubs and cleans the surface of the substrate W by holding and rotating the substrate W with a substrate holding part (not shown) and pressing the pen-type cleaning tool 12 against the surface (upper surface) of the substrate W while rotating the pen-type cleaning tool 12.

[0026] A specific example of the above-mentioned substrate holding unit (not shown) is a substrate holding unit equipped with a plurality of roller chucks that contact the peripheral edge of the substrate W. The pen-type cleaner 12 is rotatably connected to the tip of a swinging arm 13, and as the swinging arm 13 swings, the pen-type cleaner 12 scans the surface (upper surface) of the substrate W in the radial direction of the substrate W. However, the specific configuration of the cleaning apparatuses 1A and 1B is not limited to this embodiment. For example, the cleaning apparatuses 1A and 1B may be the same type of cleaning apparatus, or the cleaning apparatuses 1A and 1B may be types other than a roll type cleaner and a pen type cleaner.

[0027] The cleaning tool may be, for example, a PVA sponge. In one embodiment, the cleaning device may be a type that uses a pen-type cleaner on the front side of the substrate and a roll-type cleaner on the back side. Alternatively, for example, in one embodiment, a two-fluid jet (2FJ) is used in the primary cleaning device 1A or the secondary cleaning device 1B, and as a rinsing liquid used in combination during the two-fluid jet cleaning process, a liquid in which an inert gas is dissolved and bubbled by reducing the pressure, as described below, may be used. When the substrate surface is polished, dishing or erosion that becomes a recessed shape may be formed on the substrate surface. It is generally difficult to remove particles present inside the dishing, etc., by scrubbing. It is known that two-fluid jet cleaning is effective in such a case, but it is also assumed that there are cases in which corrosion needs to be suppressed during the two-fluid jet cleaning process, so in such cases, a liquid in which bubbles are generated may be used as a rinsing liquid.

[0028] In this embodiment, two substrate transport devices 5A and 5B are provided, but the number of substrate transport devices may vary depending on the number of cleaning devices, and is not limited to this embodiment. As shown in Fig. 1, the primary cleaning device 1A, the secondary cleaning device 1B, and the drying device 3 are arranged in a line, and the substrate transport device 5A is disposed between the primary cleaning device 1A and the secondary cleaning device 1B, and the substrate transport device 5B is disposed between the secondary cleaning device 1B and the drying device 3.

[0029] In this embodiment, the drying device 3 is an IPA drying device that dries the substrate W by supplying pure water and IPA vapor (a mixture of isopropyl alcohol and an inert gas) from the pure water supply nozzle and the IPA supply nozzle to the upper surface of the substrate W while moving the pure water supply nozzle and the IPA supply nozzle in the radial direction of the substrate W. In one embodiment, the drying device 3 may be a spin drying device that rotates the substrate W at high speed after supplying rinsing water made of pure water to the substrate W.

[0030] In this embodiment, two liquid supply devices 6A and 6B are provided. In the following description, the two liquid supply devices 6A and 6B are referred to as a first liquid supply device 6A and a second liquid supply device 6B. As described below, the first liquid supply device 6A is configured to generate a chemical liquid in which an inert gas is dissolved to a level equal to or higher than the saturation solubility, and the second liquid supply device 6B is configured to generate pure water in which an inert gas is dissolved to a level equal to or higher than the saturation solubility.

[0031] The first liquid supplying device 6A supplies the chemical liquid having the inert gas dissolved therein to the primary cleaning device 1A and the secondary cleaning device 1B through a first inert gas solution supplying line 14. The second liquid supplying device 6B supplies the pure water having the inert gas dissolved therein to the primary cleaning device 1A, the secondary cleaning device 1B, the substrate transporting devices 5A and 5B, and the drying device 3 through a second inert gas solution supplying line 15. The reason for supplying the pure water having the inert gas dissolved therein to the substrate transporting devices 5A and 5B is to suppress corrosion of the conductive material of the substrate W caused by oxygen in the surrounding atmosphere during transport of the substrate W by supplying the pure water having the inert gas dissolved therein onto the substrate W.

[0032] The primary cleaning apparatus 1A is provided with a chemical solution supply nozzle 17 for supplying a chemical solution having an inert gas dissolved therein to the surface of the substrate W, and a pure water supply nozzle 18 for supplying pure water having an inert gas dissolved therein to the surface of the substrate W. The secondary cleaning apparatus 1B is also provided with a chemical solution supply nozzle 20 for supplying a chemical solution having an inert gas dissolved therein to the surface of the substrate W, and a pure water supply nozzle 21 for supplying pure water having an inert gas dissolved therein to the surface of the substrate W. The drying apparatus 3 is provided with a pure water supply nozzle 22 for supplying pure water having an inert gas dissolved therein to the surface of the substrate W. Furthermore, each of the substrate transport apparatus 5A and the substrate transport apparatus 5B is provided with a shower nozzle 25 for supplying pure water having an inert gas dissolved therein to the surface of the substrate W.

[0033] In one embodiment, the chemical supply nozzle 17, the pure water supply nozzle 18, the chemical supply nozzle 20, the pure water supply nozzle 21, and the pure water supply nozzle 22 are fixed in position relative to the substrate W. In another embodiment, as shown in FIG. 2, in addition to the chemical supply nozzle 20, a chemical supply nozzle 20' is provided at the tip of the swing arm 13 when the surface of the substrate W is scrubbed with the pen-shaped cleaner 12, and the chemical supply path to the chemical supply nozzle 20 can be branched so that the chemical supply nozzle 20' can also be supplied with the chemical supply nozzle 20'. By moving the chemical supply nozzle 20' together with the pen-shaped cleaner 12 on the upper surface of the substrate W, the landing position of the chemical supply nozzle 20' with respect to the upper surface of the substrate W can be scanned within the surface of the substrate W. The chemical supply nozzle 20' shown in FIG. 2 can be similarly applied to the embodiments described below.

[0034] The substrate W is processed as follows. With the surface on which the conductive material is exposed facing upward, the substrate W is transported into the primary cleaning apparatus 1A by the substrate transport device 5A. More specifically, pure water (containing bubbles of the inert gas) in which an inert gas is dissolved is supplied from the shower nozzle 25 of the substrate transport device 5A to the surface (upper surface) of the substrate W, and a film of the pure water is formed on the substrate W. Thereafter, the substrate W is transported into the primary cleaning apparatus 1A by the substrate transport device 5A with the pure water containing bubbles present on its surface. The detailed configuration of the substrate transport device 5A will be described later. The primary cleaning apparatus 1A scrubs both surfaces of the substrate W with the roll cleaners 10 and 11 while supplying the chemical liquid supplied from the first liquid supply device 6A and the pure water supplied from the second liquid supply device 6B to both surfaces of the substrate W. Both the chemical liquid and the pure water are liquids containing bubbles of the inert gas. The timing of supplying the chemical liquid and the pure water is not particularly limited, and the pure water may be supplied as rinsing water after the chemical liquid is supplied.

[0035] The substrate W cleaned in the primary cleaning apparatus 1A is carried out from the primary cleaning apparatus 1A in a wet state by the substrate transport apparatus 5A, and is further transported to the secondary cleaning apparatus 1B. During the transport from the primary cleaning apparatus 1A to the secondary cleaning apparatus 1B, pure water (containing bubbles of the inert gas) in which an inert gas is dissolved is supplied onto the substrate W from the shower nozzle 25 of the substrate transport apparatus 5A, and a film of pure water is formed on the substrate W. The substrate W is carried into the secondary cleaning apparatus 1B by the substrate transport apparatus 5A with the pure water containing bubbles present on its surface. The secondary cleaning apparatus 1B scrubs the surface of the substrate W with the pen-shaped cleaner 12 while supplying the chemical liquid supplied from the first liquid supply apparatus 6A and the pure water supplied from the second liquid supply apparatus 6B to the surface (upper surface) of the substrate W. Both the chemical liquid and the pure water are liquids containing bubbles of an inert gas.

[0036] The substrate W cleaned in the secondary cleaning apparatus 1B is carried out from the secondary cleaning apparatus 1B in a wet state by the substrate transport apparatus 5B, and is further transported to the drying apparatus 3. During the transport from the secondary cleaning apparatus 1B to the drying apparatus 3, pure water (containing bubbles of the inert gas) in which an inert gas is dissolved is supplied onto the substrate W from the shower nozzle 25 of the substrate transport apparatus 5B, and a film of pure water is formed on the substrate W. The substrate W is carried into the drying apparatus 3 by the substrate transport apparatus 5B with the pure water containing bubbles present on its surface. The drying apparatus 3 dries the substrate W by supplying pure water and IPA vapor (a mixture of isopropyl alcohol and an inert gas) from the pure water supply nozzle 22 and the IPA supply nozzle to the upper surface of the substrate W while moving the pure water supply nozzle 22 and the IPA supply nozzle (not shown) in the radial direction of the substrate W. The dried substrate W is carried out from the drying apparatus 3 in a dry state by a transport apparatus (not shown).

[0037] In this embodiment, two liquid supply devices 6A, 6B are provided, but the number of liquid supply devices can vary depending on the substrate processing method, and therefore the number of liquid supply devices is not limited to this embodiment.

[0038] Next, a detailed description will be given of the first liquid supply device 6A and the second liquid supply device 6B. The first liquid supply device 6A and the second liquid supply device 6B have the same configuration, but are different in that the first liquid supply device 6A uses a chemical liquid as the liquid, whereas the second liquid supply device 6B uses pure water as the liquid.

[0039] The first liquid supplying device 6A includes an inert gas dissolving device 31A that dissolves the inert gas in the chemical solution to a level equal to or higher than the saturation solubility, thereby replacing oxygen dissolved in the chemical solution with the inert gas, and a bubble generating device 32A that generates bubbles of the inert gas in the chemical solution by reducing the pressure of the chemical solution in which the inert gas is dissolved. The inert gas dissolving device 31A is connected to an inert gas line 33A, and the inert gas is supplied from an inert gas supply source 35 to the inert gas dissolving device 31A through the inert gas line 33A. The first liquid supplying device 6A includes a pressure regulator 37A connected to the inert gas line 33A, and the pressure of the inert gas supplied to the inert gas dissolving device 31A is regulated by the pressure regulator 37A.

[0040] The inert gas supply source 35 may be an inert gas supply source as a utility facility of a factory in which the substrate processing apparatus is installed, or may be an inert gas tank storing an inert gas. Examples of the inert gas include nitrogen gas and rare gases (argon gas, helium gas, neon gas, etc.). The pressure of the inert gas supplied to the inert gas dissolving device 31A depends on the flow rates of the chemical liquid and pure water to be supplied, but is set to a gauge pressure of 1 to 10 atmospheres, which is equal to or higher than the supply pressure of the chemical liquid and pure water.

[0041] The inert gas dissolving device 31A and the bubble generating device 32A are connected by a first liquid transfer line 40A. The first liquid transfer line 40A is connected to a chemical supply source (not shown). The chemical supply source may be a chemical supply source as a utility facility of a factory in which the substrate processing apparatus is installed, or may be a chemical tank in which the chemical is stored. The chemical is sent from the chemical supply source to the first liquid transfer line 40A with a supply pressure higher than 1 atmosphere.

[0042] The inert gas dissolving device 31A is configured to dissolve the inert gas in the chemical solution to a level equal to or higher than the saturation solubility. The saturation solubility of the inert gas defined in this specification is the saturation solubility under conditions of a temperature of 20°C and 1 atm. The specific configuration of the inert gas dissolving device 31A is not particularly limited, but for example, the inert gas dissolving device 31A is configured to perform bubbling of the inert gas in the chemical solution, or to dissolve the inert gas in the chemical solution using a gas dissolving membrane. Since the pressure of the chemical solution sent from the chemical solution supply source to the first liquid transfer line 40A is higher than 1 atm, the inert gas dissolves in the chemical solution in a supersaturated state. As the inert gas dissolves in the chemical solution, the oxygen dissolved in the chemical solution is expelled by the inert gas (is replaced by the inert gas). In other words, the higher the concentration of the inert gas in the chemical solution, the lower the concentration of oxygen dissolved in the chemical solution.

[0043] The bubble generator 32A is configured to generate bubbles of the inert gas in the chemical solution by reducing the pressure of the chemical solution in which the inert gas is dissolved. The bubble generator 32A is configured to be able to reduce the pressure of the chemical solution to the lower limit of the pressure that can be supplied to the primary cleaning device 1A and the secondary cleaning device 1B downstream of the bubble generator 32A. The configuration of the bubble generator 32A is not particularly limited as long as it can reduce the pressure of the chemical solution. For example, the bubble generator 32A may be configured to reduce the pressure of the chemical solution by exposing the chemical solution in which the inert gas is dissolved to a reduced pressure atmosphere. The diameter of the bubbles can be controlled by the target pressure to be reduced by the bubble generator 32A. The diameter of the bubbles generated by the bubble generator 32A is 1 μm or less. The diameter of the bubbles can also be controlled to some extent by the pressure regulator 37A.

[0044] The first liquid transfer line 40A is connected to the first inert gas dissolving liquid supply line 14. The chemical liquid containing bubbles of inert gas is sent to the primary cleaning device 1A and the secondary cleaning device 1B through the first inert gas dissolving liquid supply line 14. The first liquid supply device 6A is equipped with a flow rate regulator 42A that regulates the flow rate of the chemical liquid. The flow rate regulator 42A is connected to the first liquid transfer line 40A and is disposed downstream of the bubble generating device 32A. The flow rate of the chemical liquid containing bubbles of inert gas is regulated by the flow rate regulator 42A. In order to prevent malfunction of the flow rate regulator 42A due to bubbles, in one embodiment, the flow rate regulator 42A may be disposed upstream of the inert gas dissolving device 31A.

[0045] The bubbles contained in the chemical solution can inhibit the dissolution of oxygen in the atmosphere into the chemical solution, so that it is possible to maintain a low dissolved oxygen concentration state in the chemical solution. If the bubble diameter is too large, there is a possibility that particle adhesion, the contact rate of the chemical solution with the substrate W will decrease, and the effect of erosion when the bubbles collapse will become large, so the bubble diameter needs to be controlled, and 1 μm is preferable. In general, when the bubble diameter is large, the bubbles collapse in a very short time, and the concentration of the inert gas dissolved in the chemical solution will last for a short time. In contrast, with 1 μm bubbles, the collapse speed is slow, and the amount of bubbles mixed in can be maintained for a certain period of time, so that the concentration of the inert gas dissolved in the chemical solution can be maintained.

[0046] The first liquid supply device 6A further includes a three-way valve 45A disposed downstream of the air bubble generator 32A and a drain line 46A connected to the three-way valve 45A. In the example shown in FIG. 1, the three-way valve 45A is disposed between the air bubble generator 32A and the flow rate regulator 42A. The inlet of the three-way valve 45A is connected to the first liquid transfer line 40A, and the two outlets of the three-way valve 45A are connected to the first liquid transfer line 40A and the drain line 46A, respectively. The three-way valve 45A is configured to selectively close one of the two outlets while maintaining one inlet open. The three-way valve 45A is an actuator-driven three-way valve operated by an actuator such as an electric motor or an air cylinder. The three-way valve 45A is connected to the operation control unit 7, and the operation of the three-way valve 45A is controlled by the operation control unit 7.

[0047] The diameter of the bubbles generated by the bubble generator 32A may not be stable when the bubble generator 32A is started. Also, during an interval in which the substrate is not cleaned, the bubble diameter may not be stable because there is no flow of the chemical liquid. Therefore, when the bubble generator 32A is started and / or during an interval in which the substrate is not cleaned, the operation control unit 7 issues a command to the three-way valve 45A to switch the transfer destination of the chemical liquid to the drain line 46A, and drains the chemical liquid through the drain line 46A for a preset time before supplying it to the cleaning apparatuses 1A and 1B. After the preset time has elapsed, the operation control unit 7 issues a command to the three-way valve 45A to switch the transfer destination of the chemical liquid from the drain line 46A to the first liquid transfer line 40A, and supplies the chemical liquid containing the bubbles to the cleaning apparatuses 1A and 1B. This makes it possible to supply a chemical liquid with a stable bubble diameter and amount of mixed bubbles.

[0048] The second liquid supply device 6B has the same configuration as the first liquid supply device 6A described above. The inert gas dissolving device 31B, the bubble generating device 32B, the inert gas line 33B, the second liquid transfer line 40B, the pressure regulator 37B, the three-way valve 45B, the drain line 46B, and the flow rate adjuster 42B of the second liquid supply device 6B correspond to the inert gas dissolving device 31A, the bubble generating device 32A, the inert gas line 33A, the first liquid transfer line 40A, the pressure regulator 37A, the three-way valve 45A, the drain line 46A, and the flow rate adjuster 42A of the first liquid supply device 6A, respectively. The above description of the first liquid supply device 6A and the above description of the case where the liquid is a chemical liquid (bubble diameter, etc.) are also applied to the second liquid supply device 6B and the case where the liquid is pure water, so that the overlapping description will be omitted.

[0049] The second liquid transfer line 40B is connected to a pure water supply source (not shown). The pure water supply source may be a pure water supply source as a utility facility of a factory in which the substrate processing apparatus is installed, or may be a pure water tank in which pure water is stored. The pure water is sent from the pure water supply source to the second liquid transfer line 40B with a supply pressure higher than 1 atmosphere. The second liquid transfer line 40B is connected to the second inert gas solution supply line 15. The pure water containing bubbles of inert gas is sent through the second inert gas solution supply line 15 to the primary cleaning device 1A, the secondary cleaning device 1B, the substrate transfer device 5A, the substrate transfer device 5B, and the drying device 3. The bubble generating device 32B is configured to be able to lower the pressure of the pure water to the lower limit of the pressure that can be supplied to the primary cleaning device 1A, the secondary cleaning device 1B, the substrate transfer device 5A, the substrate transfer device 5B, and the drying device 3 downstream of the bubble generating device 32B.

[0050] As with the first liquid supply device 6A, the operation control unit 7 issues a command to the three-way valve 45B at the start of the air bubble generating device 32B and / or during an interval in which the substrate is not cleaned, to switch the destination of the pure water to the drain line 46B and to drain the pure water through the drain line 46B for a preset time before supplying it to the cleaning devices 1A, 1B. After the preset time has elapsed, the operation control unit 7 issues a command to the three-way valve 45B to switch the destination of the pure water from the drain line 46B to the second liquid transfer line 40B, and to supply the pure water containing air bubbles to the cleaning devices 1A, 1B.

[0051] The primary cleaning apparatus 1A and the secondary cleaning apparatus 1B supply a chemical solution and pure water to the surface of the substrate W, thereby forming a film of the chemical solution and pure water on the surface of the substrate W. Since an inert gas is dissolved in the chemical solution and the pure water at a solubility equal to or higher than the saturation solubility, and bubbles of the inert gas are present, the film of the chemical solution and pure water can block oxygen in the surrounding atmosphere and suppress corrosion of the conductive material (e.g., wiring metal such as copper) exposed on the surface of the substrate W. Similarly, in the drying apparatus 3, a film of pure water containing bubbles of inert gas is formed on the surface of the substrate W, thereby suppressing corrosion of the conductive material exposed on the surface of the substrate W.

[0052] Furthermore, according to this embodiment, a film of pure water containing inert gas bubbles is formed on the surface of the substrate W even when the substrate W is transported between the primary cleaning apparatus 1A and the secondary cleaning apparatus 1B, and between the secondary cleaning apparatus 1B and the drying apparatus 3, so that corrosion of the conductive material exposed on the surface of the substrate W can be suppressed even when the substrate W is transported.

[0053] The substrate transport apparatus 5A and the substrate transport apparatus 5B have substantially the same configuration, so the substrate transport apparatus 5A will be described below. FIGS. 3(a) to 3(c) are side views showing one embodiment of the substrate transport apparatus 5A. As shown in FIG. 3(a), the substrate transport apparatus 5A includes a robot hand 51 that supports the substrate W, a moving mechanism 53 that moves the robot hand 51, a liquid receiving container 55 connected to the moving mechanism 53, and a shower nozzle 25 located above the robot hand 51. FIGS. 3(a) to 3(c) show a cross section of the liquid receiving container 55. At least a bottom 55a of the liquid receiving container 55 is located below the shower nozzle 25 and the robot hand 51. In this embodiment, the shower nozzle 25 is located in the liquid receiving container 55.

[0054] The moving mechanism 53 is configured to move the robot hand 51 in the horizontal direction and the vertical direction, and to rotate the robot hand 51 horizontally. The liquid receiving container 55 is connected to the moving mechanism 53 so as to rotate together with the robot hand 51 and move in the vertical direction together with the robot hand 51, while the liquid receiving container 55 does not move in the horizontal direction together with the robot hand 51. The liquid receiving container 55 has a notch 55b that allows the robot hand 51 to move horizontally outside the liquid receiving container 55. The shower nozzle 25 is fixed to the liquid receiving container 55. More specifically, the shower nozzle 25 is fixed to the liquid receiving container 55 via a connecting member 56. The shower nozzle 25 may be directly fixed to the liquid receiving container 55. The shower nozzle 25 rotates together with the liquid receiving container 55 and moves in the vertical direction, but does not move in the horizontal direction together with the robot hand 51. That is, the relative positions of the shower nozzle 25 and the liquid receiving container 55 are fixed.

[0055] The second inert gas solution supply line 15 extending from the second liquid supply device 6B is connected to the shower nozzle 25, and the pure water with the inert gas dissolved therein (containing inert gas bubbles) is supplied to the shower nozzle 25. The shower nozzle 25 has a plurality of liquid discharge ports on its lower surface. The pure water with the inert gas dissolved therein is supplied from the shower nozzle 25 to the entire upper surface of the substrate W on the robot hand 51.

[0056] As shown in FIG. 3(b), when the substrate transport device 5A receives the substrate W, the robot hand 51 extends outside the liquid receiving container 55 through the notch 55b. When the robot hand 51 receives the substrate W, the robot hand 51 returns to the reference position (the position shown in FIG. 3(a)) in the liquid receiving container 55. The shower nozzle 25 is located above the robot hand 51 in the reference position. Therefore, when the robot hand 51 is in the reference position, the shower nozzle 25 supplies pure water in which an inert gas is dissolved to the entire upper surface of the substrate W on the robot hand 51. The pure water is collected in the liquid receiving container 55 and discharged from the liquid receiving container 55.

[0057] When the substrate transport device 5A transports the substrate W from the primary cleaning device 1A to the secondary cleaning device 1B, the robot hand 51 rotates by the moving mechanism 53 while remaining in the liquid receiving container 55, as shown in FIG. 3(c). The shower nozzle 25 rotates integrally with the robot hand 51, so that the shower nozzle 25 continues to supply the pure water (containing inert gas bubbles) having the inert gas dissolved therein to the entire upper surface of the substrate W on the robot hand 51 while the robot hand 51 is rotating. In this way, by supplying the pure water containing the inert gas bubbles during the substrate transport, the liquid film on the substrate surface is maintained, and the pure water with the inert gas dissolved therein blocks oxygen in the atmosphere, making it possible to suppress corrosion of the conductive material during the substrate transport.

[0058] From the viewpoint of suppressing corrosion of the conductive material, it is desirable to remove dissolved oxygen in the chemical liquid and the pure water as much as possible. Therefore, in one embodiment shown in FIG. 4, the first liquid supply device 6A and the second liquid supply device 6B further include degassing devices 60A, 60B that degas the liquid (chemical liquid and pure water in the embodiment shown in FIG. 4). The degassing device 60A of the first liquid supply device 6A is connected to the first liquid transfer line 40A and is arranged upstream of the inert gas dissolving device 31A. This degassing device 60A degasses the chemical liquid (removes oxygen from the chemical liquid) before the inert gas is dissolved in the chemical liquid by the inert gas dissolving device 31A. The degassing device 60B of the second liquid supply device 6B is connected to the second liquid transfer line 40B and is arranged upstream of the inert gas dissolving device 31B. This degassing device 60B degasses the pure water (removes oxygen from the pure water) before the inert gas is dissolved in the pure water by the inert gas dissolving device 31B. According to the embodiment of FIG. 4, it is possible to remove dissolved oxygen from chemical solutions and pure water to an unlimited extent.

[0059] In general, the dissolution of a gas into a liquid follows Henry's law. That is, the amount of gas that can be dissolved in a liquid at a certain temperature is approximately directly proportional to the partial pressure of the gas. Therefore, the solubility increases approximately in proportion to the pressure of the gas to be dissolved (or the partial pressure if multiple gases are involved). In addition, at a constant atmospheric pressure, the solubility of a gas depends on the temperature.

[0060] Figure 5 shows the relative concentration of oxygen and other representative inert gases at 1 cm of water under 1 atmosphere. 3 Dissolution volume per cm 3 ) is shown. As shown in Figure 5, the only gas with a high solubility in oxygen at the same pressure is argon gas, while the solubilities of other inert gases are low. In this case, under 1 atmosphere conditions, re-dissolution of oxygen may occur depending on the partial pressures of nitrogen and oxygen in the atmosphere.

[0061] Therefore, in the embodiment described below, the solubility of the inert gas is increased by pressurizing the inert gas to be dissolved and lowering the temperature of the liquid to be the solvent (chemical liquid and pure water in the following example). As shown in FIG. 6, the first liquid supply device 6A and the second liquid supply device 6B further include liquid cooling devices 64A and 64B for cooling the liquid before the inert gas is dissolved (chemical liquid and pure water in the embodiment of FIG. 8), and pumps 65A and 65B for pressurizing the liquid before the inert gas is dissolved. More specifically, the first liquid supply device 6A includes a liquid cooling device 64A and a pump 65A connected to the first liquid transfer line 40A. Similarly, the second liquid supply device 6B includes a liquid cooling device 64B and a pump 65B connected to the second liquid transfer line 40B.

[0062] The liquid cooling device 64A and the pump 65A are disposed upstream of the inert gas dissolving device 31A. The liquid cooling device 64A cools the chemical liquid before the inert gas is dissolved in the chemical liquid by the inert gas dissolving device 31A. The target temperature of the chemical liquid to be cooled is set in advance, and for example, the target temperature is a temperature higher than 0°C and lower than room temperature to avoid freezing of the chemical liquid. For example, the liquid cooling device 64A is configured to cool the chemical liquid to a temperature within a range of 5°C to 20°C.

[0063] The pump 65A pressurizes the liquid chemical before the inert gas is dissolved in the liquid chemical by the inert gas dissolving device 31A. More specifically, the pump 65A pressurizes the liquid chemical to a pressure higher than the supply pressure of the liquid chemical sent from the liquid chemical supply source. The target pressure of the liquid chemical to be pressurized is set in advance, and is, for example, a pressure within a pressure range equivalent to 1 to 10 atmospheres in gauge pressure.

[0064] In the embodiment shown in FIG. 6, the liquid cooling device 64A is disposed upstream of the pump 65A, however, the liquid cooling device 64A may be disposed downstream of the pump 65A as long as both the liquid cooling device 64A and the pump 65A are disposed upstream of the inert gas dissolving device 31A.

[0065] The configuration and arrangement of the liquid cooling device 64B and the pump 65B of the second liquid supply device 6B are the same as those of the liquid cooling device 64A and the pump 65A of the first liquid supply device 6A described above, so that the overlapping description will be omitted. According to this embodiment, it is possible to increase the solubility of the inert gas having a low solubility, and the oxygen removal effect is increased. The degassing devices 60A and 60B shown in FIG. 4 can also be applied to the embodiment shown in FIG. 6. For example, as shown in FIG. 7, the degassing device 60A is disposed between the liquid cooling device 64A and the pump 65A, and the degassing device 60B is disposed between the liquid cooling device 64B and the pump 65B.

[0066] FIG. 8 is a schematic diagram showing another embodiment of the substrate processing apparatus. The configuration and operation of this embodiment that are not particularly described are the same as those of the above embodiment described with reference to FIG. 1 and FIG. 3, so that the overlapping description will be omitted. As shown in FIG. 8, in this embodiment, the first liquid supply device 6A and the second liquid supply device 6B further include buffer tanks 67A, 67B for temporarily storing liquid containing bubbles made of inert gas (chemical liquid and pure water in the embodiment of FIG. 8), and auxiliary pumps 68A, 68B for pressurizing the liquid in the buffer tanks 67A, 67B. In this embodiment, the three-way valves 45A, 45B and drain lines 46A, 46B shown in FIG. 1 are not provided.

[0067] The configuration and arrangement of the buffer tank 67A and the auxiliary pump 68A are the same as those of the buffer tank 67B and the auxiliary pump 68B, so the buffer tank 67A and the auxiliary pump 68A will be described below. The buffer tank 67A and the auxiliary pump 68A are connected to the first liquid transfer line 40A. The buffer tank 67A is disposed downstream of the air bubble generator 32A, and the auxiliary pump 68A is disposed downstream of the buffer tank 67A. The flow rate regulator 42A is disposed downstream of the auxiliary pump 68A. If the auxiliary pump 68A can be operated at a variable speed, the flow rate regulator 42A may be omitted.

[0068] The chemical solution containing the bubbles generated by the bubble generator 32A is temporarily stored in the buffer tank 67A. Since bubbles with a large diameter tend to collapse, this can be utilized to remove coarse bubbles, stabilizing the bubble diameter and the amount of mixed bubbles. In one embodiment, the inert gas used in the inert gas dissolving device 31A may be introduced into the buffer tank 67A to pressurize the chemical solution in the buffer tank 67A with the inert gas. In this case, the auxiliary pump 68A may be omitted.

[0069] The degassing devices 60A, 60B shown in FIG. 4 and / or the liquid cooling devices 64A, 64B and pumps 65A, 65B shown in FIG. 5 may be applied to the embodiment described with reference to FIG.

[0070] FIG. 9 is a schematic diagram showing another embodiment of the substrate processing apparatus. The configuration and operation of this embodiment that are not particularly described are the same as those of the above embodiment described with reference to FIG. 1 and FIG. 3, so that the overlapping description will be omitted. As shown in FIG. 9, in this embodiment, the first liquid supply device 6A and the second liquid supply device 6B further include liquid tanks 71A, 71B arranged upstream of the inert gas dissolving devices 31A, 31B, pumps 72A, 72B that send the liquids (chemical liquids and pure water in the embodiment of FIG. 9) stored in the liquid tanks 71A, 71B to the inert gas dissolving devices 31A, 31B, and circulation lines 73A, 73B that return the liquids containing bubbles to the liquid tanks 71A, 71B. The circulation lines extend from the downstream positions of the 73A, 73B and the bubble generating devices 32A, 32B to the liquid tanks 71A, 71B.

[0071] The first liquid supply device 6A and the second liquid supply device 6B have the same configuration, so the first liquid supply device 6A will be described below. The liquid tank 71A is connected to the first liquid transfer line 40A. The liquid tank 71A is located upstream of the inert gas dissolving device 31A and the bubble generating device 32A. The chemical liquid supplied from a chemical liquid supply source (not shown) is temporarily stored in the liquid tank 71A. The pump 72A is connected to the first liquid transfer line 40A and is located between the liquid tank 71A and the inert gas dissolving device 31A. When the pump 72A is operated, the chemical liquid stored in the liquid tank 71A is pressurized and sent to the inert gas dissolving device 31A.

[0072] The circulation line 73A is connected to the first liquid transfer line 40A at a position downstream of the bubble generator 32A. More specifically, the circulation line 73A is connected to one of the two outlets of the three-way valve 45A instead of the drain line of Fig. 1. That is, the inlet of the three-way valve 45A is connected to the first liquid transfer line 40A, and the two outlets of the three-way valve 45A are connected to the first liquid transfer line 40A and the circulation line 73A, respectively.

[0073] The diameter of the bubbles generated by the bubble generator 32A may not be stable when the bubble generator 32A is started. Also, during an interval in which the substrate is not cleaned, the bubble diameter may not be stable because there is no flow of the chemical liquid. Therefore, the operation control unit 7 issues a command to the three-way valve 45A when the bubble generator 32A is started and / or during an interval in which the substrate is not cleaned, to switch the destination of the chemical liquid to the circulation line 73A and return the chemical liquid to the liquid tank 71A through the circulation line 73A for a preset time before supplying it to the cleaning devices 1A and 1B. While the chemical liquid circulates through the liquid tank 71A, the inert gas dissolving device 31A, the bubble generator 32A, and the circulation line 73A, a process of dissolving the inert gas in the liquid to a saturation solubility or more and a process of generating bubbles of the inert gas in the chemical liquid are repeated. After a preset time has elapsed, the operation control unit 7 issues a command to the three-way valve 45A to switch the destination of the chemical liquid from the circulation line 73A to the first liquid transfer line 40A, and supplies the chemical liquid containing air bubbles to the cleaning devices 1A and 1B. This makes it possible to supply a chemical liquid with stable air bubble diameters and mixed bubble amounts.

[0074] The configurations and arrangements of the liquid tank 71B, pump 72B, and circulation line 73B of the second liquid supply device 6B are the same as the configurations and arrangements of the liquid tank 71A, pump 72A, and circulation line 73A of the first liquid supply device 6A, so duplicated explanations will be omitted.

[0075] This embodiment is suitable when the supply pressure of the chemical liquid supplied from the chemical liquid supply source (not shown) and the supply pressure of the pure water supplied from the pure water supply source (not shown) are low, or when the flow rates of the chemical liquid and the pure water used for cleaning and drying the substrate W are high. Furthermore, by repeatedly circulating the chemical liquid and the pure water, it is possible to eliminate bubbles with large diameters among the generated bubbles during circulation, and it is possible to supply the chemical liquid and the pure water with more stable bubble diameters and mixed amount of bubbles.

[0076] The above-mentioned embodiments can be appropriately combined. For example, as shown in FIG. 10, the degassing devices 60A and 60B shown in FIG. 4 and the liquid cooling devices 64A and 64B shown in FIG. 6 may be applied to the embodiment described with reference to FIG. 9. In the embodiment shown in FIG. 10, the degassing device 60A and the liquid cooling device 64A are connected to the liquid tank 71A. The chemical liquid is supplied to the liquid tank 71A via the degassing device 60A, and the liquid cooling device 64A cools the chemical liquid in the liquid tank 71A. Similarly, the degassing device 60B and the liquid cooling device 64B are connected to the liquid tank 71B. Pure water is supplied to the liquid tank 71B via the degassing device 60B, and the liquid cooling device 64B cools the pure water in the liquid tank 71B.

[0077] 1 to 10, the substrate W to be processed is a substrate W having a conductive material exposed on its surface. A specific example of such a substrate W is a substrate W polished by a CMP apparatus. The substrate processing apparatus according to the embodiment shown below includes cleaning apparatuses 1A, 1B, a drying apparatus 3, a substrate transport apparatus 5A, 5B, a first liquid supply apparatus 6A, and a second liquid supply apparatus 6B, as well as a CMP apparatus (chemical mechanical polishing apparatus) that chemically and mechanically polishes the substrate W.

[0078] Fig. 11 is a schematic diagram showing one embodiment of a substrate processing apparatus equipped with a CMP apparatus (chemical mechanical polishing apparatus). A first liquid supply apparatus 6A and a second liquid supply apparatus 6B shown in Fig. 11 are the first liquid supply apparatus 6A and the second liquid supply apparatus 6B of any of the embodiments described with reference to Figs. 1 to 10. As shown in Fig. 11, the substrate processing apparatus includes a plurality of CMP apparatuses 80 that chemically and mechanically polish a substrate W, and a transporter 81 that loads the substrate W into any of the CMP apparatuses 80 and loads the polished substrate W out.

[0079] The multiple CMP apparatuses 80 have the same configuration. Fig. 12 is a perspective view showing a schematic diagram of one embodiment of the CMP apparatus 80. The CMP apparatus 80 includes a polishing table 85 supporting a polishing pad 82 having a polishing surface 82a, a polishing head 87 pressing a substrate W, which is an object to be polished, against the polishing surface 82a, and a polishing liquid supply nozzle 88 supplying a polishing liquid to the polishing surface 82a. The polishing liquid is typically a slurry containing abrasive grains.

[0080] The polishing head 87 is configured to hold the substrate W on its lower surface by vacuum suction or the like. The CMP device 80 further includes a support shaft 94, a polishing head swinging arm 96 connected to the upper end of the support shaft 94 and swinging the polishing head 87, a polishing head shaft 98 rotatably supported at the free end of the polishing head swinging arm 96, and a polishing head rotating device 100 for rotating the polishing head 87 around its axis. The polishing head rotating device 100 is fixed to the polishing head swinging arm 96 and connected to the polishing head shaft 98 via a torque transmission mechanism (not shown) consisting of a belt, a pulley, and the like. The polishing head 87 is connected to the lower end of the polishing head shaft 98. The polishing head rotating device 100 rotates the polishing head shaft 98 via the torque transmission mechanism, and the polishing head 87 rotates together with the polishing head shaft 98. In this way, the polishing head 87 is rotated by the polishing head rotating device 100 in the direction indicated by the arrow around its axis. A specific example of the polishing head rotating device 100 is an electric motor.

[0081] The polishing head shaft 98 can be moved up and down relative to the polishing head swing arm 96 by an elevation mechanism (not shown). The up and down movement of the polishing head shaft 98 allows the polishing head 87 to move up and down relative to the polishing head swing arm 96 .

[0082] The CMP apparatus 80 further includes a polishing table rotating device 101 that rotates the polishing pad 82 and the polishing table 85 about their respective axes. The polishing table 85 is connected to the polishing table rotating device 101 via a table shaft 85a. The polishing table 85 and the polishing pad 82 are rotated by the polishing table rotating device 101 about the table shaft 85a in the direction indicated by the arrow. The polishing pad 82 is attached to the upper surface of the polishing table 85. The upper surface of the polishing pad 82 constitutes a polishing surface 82a that polishes the substrate W. A specific example of the polishing table rotating device 101 is an electric motor.

[0083] The substrate W is polished as follows. While the polishing head 87 and the polishing table 85 are rotated, a polishing liquid is supplied from a polishing liquid supply nozzle 88 onto the polishing surface 82a of the polishing pad 82. The polishing pad 82 rotates integrally with the polishing table 85 around its axis. The polishing head 87 is lowered to a predetermined polishing position by a lifting mechanism (not shown). Furthermore, the polishing head 87 presses the substrate W against the polishing surface 82a of the polishing pad 82 with a predetermined pressure at the above polishing position. With the polishing liquid present on the polishing surface 82a of the polishing pad 82, the substrate W is brought into sliding contact with the polishing surface 82a of the polishing pad 82. The surface of the substrate W is polished by a combination of the chemical action of the polishing liquid supplied onto the polishing surface 82a and the mechanical action of the abrasive grains contained in the polishing liquid and / or the polishing pad 82.

[0084] The substrate processing apparatus shown in FIG. 11 is a composite processing apparatus that polishes, cleans, and dries a substrate W. The substrate W is processed by the substrate processing apparatus shown in FIG. 11 as follows. The substrate W to be polished is transported to a transporter 81 by a transport robot (not shown). The transporter 81 transports the substrate W to one of a plurality of CMP apparatuses 80, and the CMP apparatus 80 polishes the substrate W. The polished substrate W is taken out of the CMP apparatus 80 by the transporter 81 and transferred to the substrate transfer apparatus 5A via the temporary placement table 84. The temporary placement table 84 is provided between the transporter 81 and the substrate transfer apparatus 5A. The transporter 81 places the substrate W on the temporary placement table 84, and then the substrate transfer apparatus 5A takes out the substrate W from the temporary placement table 84. In the substrate processing apparatus having the CMP apparatus 80 of this example, a chemical solution containing bubbles of inert gas or pure water may be supplied to the substrate W on the transporter 81 or the temporary placement table 84 after polishing. The substrate W is further transported into the primary cleaning apparatus 1A by the substrate transport device 5A. The primary cleaning apparatus 1A scrubs the surface of the substrate W with a cleaning tool while supplying a chemical liquid supplied from a first liquid supply device 6A and pure water supplied from a second liquid supply device 6B to the surface of the substrate W. Both the chemical liquid and the pure water are liquids containing bubbles of inert gas.

[0085] The substrate W cleaned in the primary cleaning apparatus 1A is transported to the secondary cleaning apparatus 1B by the substrate transport apparatus 5A. During the transport from the primary cleaning apparatus 1A to the secondary cleaning apparatus 1B, pure water containing inert gas bubbles is supplied onto the substrate W, forming a film of pure water on the substrate W. The secondary cleaning apparatus 1B scrubs the surface of the substrate W with a cleaning tool while supplying the chemical liquid supplied from the first liquid supply apparatus 6A and the pure water supplied from the second liquid supply apparatus 6B to the surface of the substrate W. Both the chemical liquid and the pure water are liquids containing inert gas bubbles.

[0086] The substrate W cleaned in the secondary cleaning apparatus 1B is transported to the drying apparatus 3 by the substrate transport apparatus 5B. During transport from the secondary cleaning apparatus 1B to the drying apparatus 3, pure water containing bubbles of inert gas is supplied onto the substrate W, forming a film of pure water on the substrate W. The drying apparatus 3 dries the substrate W by supplying pure water and IPA vapor (a mixture of isopropyl alcohol and inert gas) to the upper surface of the substrate W from the pure water supply nozzle and the IPA supply nozzle while moving the pure water supply nozzle and the IPA supply nozzle in the radial direction of the substrate W.

[0087] According to this embodiment, the conductive material (e.g., wiring metal) exposed on the surface of the substrate W polished by the CMP apparatus 80 is covered with a liquid containing bubbles of inert gas during cleaning, transportation, and drying of the substrate W, thereby suppressing corrosion of the conductive material of the substrate W. In this embodiment shown in Fig. 11, four CMP apparatuses 80 are provided, but the number of CMP apparatuses 80 is not limited to this embodiment. In one embodiment, the substrate processing apparatus may include only a single CMP apparatus.

[0088] Although FIG. 11 shows an example of a substrate processing apparatus having a CMP apparatus 80 provided before a cleaning / drying apparatus for the substrate W, the above-described embodiment can also be applied, for example, to a case where a plating apparatus, etching apparatus, bevel polishing apparatus, etc. for the substrate W is provided before the cleaning / drying apparatus, if it is necessary to suppress corrosion of the conductive material of the substrate W.

[0089] The substrate processing apparatus of the embodiment described so far includes two liquid supply devices 6A and 6B, i.e., the first liquid supply device 6A for dissolving an inert gas in a chemical liquid and the second liquid supply device 6B for dissolving an inert gas in pure water, but the first liquid supply device 6A for dissolving an inert gas in a chemical liquid may be omitted. In this case, the second liquid supply device 6B dissolves the inert gas in the pure water to generate pure water containing bubbles of the inert gas, and then, by adding cleaning chemical components such as a chelating agent and a pH adjuster to the pure water, a chemical liquid containing bubbles of the inert gas can be created.

[0090] If the chemical liquid itself contains an antiseptic that suppresses corrosion of the conductive material, and the chemical liquid can be sufficiently removed by washing the substrate W with pure water, the chemical liquid may be supplied directly to the surface of the substrate W without dissolving an inert gas in the chemical liquid. In this case, the first liquid supply device 6A that dissolves an inert gas in the chemical liquid may also be omitted.

[0091] In the embodiments described so far, chemical liquids and pure water are used as the liquids, but the present invention can also be applied to liquids other than chemical liquids and pure water.

[0092] The operation of the substrate processing apparatus of each of the above-mentioned embodiments is controlled by the operation control unit 7. The operation control unit 7 is composed of at least one computer. The operation control unit 7 operates according to instructions included in a program electrically stored in the storage device 7a. That is, the operation control unit 7 issues a command to the substrate processing apparatus to cause the substrate processing apparatus to execute any of the substrate processing methods of the above-mentioned embodiments. The program for causing the operation control unit 7 to execute such operations is recorded in a computer-readable recording medium, which is a non-transient tangible object, and is provided to the operation control unit 7 via the recording medium. Alternatively, the program may be input to the operation control unit 7 from a communication device via a communication network such as the Internet or a local area network.

[0093] The above-described embodiments have been described for the purpose of enabling a person having ordinary skill in the art to practice the present invention. Various modifications of the above-described embodiments are naturally possible for a person skilled in the art, and the technical idea of ​​the present invention can be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but is to be interpreted in the broadest scope according to the technical idea defined by the claims. [Explanation of symbols]

[0094] 1A, 1B Cleaning equipment 3 Drying equipment 5A, 5B Substrate transport device 6A,6B Liquid supply device 7. Operation control section 10,11 Roll cleaning tool 12 Pen-type cleaning tool 14,15 Inert gas solution supply line 17 Chemical supply nozzle 18 Pure water supply nozzle 20,20' Chemical supply nozzle 21 Pure water supply nozzle 22 Pure water supply nozzle 25 Shower Nozzle 31A, 31B Inert gas dissolving device 32A, 32B Bubble generator 33A, 33B Inert gas lines 35 Inert Gas Supply Source 37A, 37B Pressure Regulator 40A, 40B First liquid transfer line 42A,42B Flow controller 45A, 45B Three-way valve 46A, 46B Drain line 51 Robot Hand 53 Moving mechanism 55 Liquid receiving container 60A, 60B Deaeration device 64A,64B Liquid cooling device 65A, 65B Pump 71A, 71B Liquid tank 72A, 72B Pump 73A, 73B Circulation Line 80 CMP equipment 81 Transporter 82 Polishing Pad 82a Polished surface 84 Temporary Stand 85 Polishing Table 87 Polishing Head 88 Polishing fluid supply nozzle 94 Spindle 96 Polishing head swing arm 98 Polished head shaft 100 Polishing head rotating device 101 Polishing table rotation device

Claims

1. 1. A method for processing a substrate having an exposed conductive material on a surface thereof, comprising: By dissolving an inert gas in a liquid to a level equal to or greater than its saturation solubility, oxygen dissolved in the liquid is replaced with the inert gas; The liquid having the inert gas dissolved therein is decompressed to generate bubbles of the inert gas in the liquid; a substrate processing method comprising: processing the substrate while supplying the liquid containing the bubbles to the surface of the substrate;

2. The substrate processing method according to claim 1 , wherein the bubbles have a diameter of 1 μm or less.

3. 3. The substrate processing method according to claim 1, wherein the saturated solubility of the inert gas is determined under conditions of a temperature of 20[deg.] C. and a pressure of 1 atmospheric pressure.

4. The method of claim 1 , further comprising degassing the liquid before dissolving the inert gas in the liquid.

5. The method of claim 1 , further comprising cooling the liquid before dissolving the inert gas in the liquid.

6. The method of claim 5, wherein the cooled liquid has a temperature in the range of 5°C to 20°C.

7. 7. The substrate processing method according to claim 1, further comprising repeating a step of dissolving the inert gas in the liquid to above its saturation solubility while circulating the liquid through a liquid tank, and a step of generating bubbles of the inert gas in the liquid.

8. 8. The substrate processing method according to claim 1, wherein the inert gas is nitrogen gas or a rare gas.

9. The substrate processing method according to claim 1 , wherein the liquid is pure water or a chemical liquid.

10. The substrate processing method according to claim 1 , further comprising: supplying the liquid containing the bubbles onto the surface of the substrate while the substrate is being transported.

11. the processing of the substrate is a cleaning process, the cleaning process being performed in a cleaning apparatus; 11. The substrate processing method according to claim 10, wherein the substrate is loaded into the cleaning apparatus with the liquid containing the bubbles present on the surface of the substrate, and the cleaned substrate is unloaded from the cleaning apparatus while remaining wet.

12. the processing of the substrate is a cleaning process; The substrate processing method further includes drying the cleaned substrate in a drying apparatus; 11. The substrate processing method according to claim 10, wherein the substrate is loaded into the drying apparatus with the liquid containing the bubbles present on the surface of the substrate, and the dried substrate is unloaded from the drying apparatus in a dry state.

13. the processing of the substrate is a cleaning process; The substrate processing method further includes polishing the substrate by bringing the substrate into sliding contact with a polishing surface while supplying a polishing liquid onto the polishing surface; The substrate processing method according to claim 1 , wherein the cleaning process is performed after polishing the substrate.

14. A substrate processing apparatus for processing a substrate having an exposed conductive material on a surface thereof, comprising: an inert gas dissolving device that dissolves an inert gas in a liquid to a saturation solubility or more, thereby replacing oxygen dissolved in the liquid with the inert gas; a bubble generating device that generates bubbles of the inert gas in the liquid by reducing the pressure of the liquid having the inert gas dissolved therein; a processing module for processing the substrate while supplying the liquid containing the bubbles to the surface of the substrate; 11. A substrate processing apparatus comprising: an inert gas solution supply line for delivering the liquid containing the gas bubbles to the processing module.

15. The substrate processing apparatus according to claim 14 , wherein the air bubble generating device is configured to generate air bubbles having a diameter of 1 μm or less.

16. The substrate processing apparatus according to claim 14 , wherein the saturated solubility of the inert gas is determined under conditions of a temperature of 20° C. and a pressure of 1 atmosphere.

17. The substrate processing apparatus according to claim 14 , further comprising a degassing device that degasses the liquid before the inert gas is dissolved in the liquid.

18. The substrate processing apparatus according to claim 14 , further comprising a liquid cooling device that cools the liquid before dissolving the inert gas in the liquid.

19. The substrate processing apparatus of claim 18, wherein the liquid cooling device is configured to cool the liquid to a temperature in a range of 5° C. to 20° C. before dissolving the inert gas therein.

20. A liquid tank disposed upstream of the inert gas dissolving device; a pump that sends the liquid stored in the liquid tank to the inert gas dissolving device; The substrate processing apparatus according to claim 14 , further comprising a circulation line extending from a position downstream of the bubble generating device to the liquid tank and returning the liquid containing the bubbles to the liquid tank.

21. The substrate processing apparatus according to claim 14 , wherein the inert gas is nitrogen gas or a rare gas.

22. The substrate processing apparatus according to claim 14 , wherein the liquid is pure water or a chemical liquid.

23. The substrate processing apparatus further includes a substrate transport device that transports the substrate, The substrate transport device is A robot hand that supports the substrate; 23. The substrate processing apparatus according to claim 14, further comprising a shower nozzle disposed above the robot hand and connected to the inert gas solution supply line.

24. a CMP apparatus that polishes the substrate by bringing the substrate into sliding contact with the polishing surface while supplying a polishing liquid onto the polishing surface; The substrate processing apparatus according to claim 14 , wherein the processing module is a cleaning apparatus that cleans the substrate after a polishing operation of the CMP apparatus.

25. 14. A computer-readable recording medium having recorded thereon a program for causing a computer to execute an operation of issuing an instruction to a substrate processing apparatus to cause the substrate processing apparatus to execute the substrate processing method according to claim 1.

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