Wafer placement table

Abstract

A wafer mounting table 10 includes: a ceramic plate 20 having a wafer mounting surface 22a; a cooling plate 30 having a refrigerant flow path 32; a first penetration part 51 and a second penetration part 52 penetrating the ceramic plate 20 in a vertical direction; a first passage 61 provided at least inside the cooling plate 30 and communicating with the first penetration part 51; and a second passage 62 provided at least inside the cooling plate 30 and communicating with the second penetration part 52. The first passage 61 has a gas intermediate passage 61b extending in a direction crossing the vertical direction. The second passage 62 has a gas intermediate passage 62b extending in a direction crossing the vertical direction. The gas intermediate passage 62b is provided above the gas intermediate passage 61b. The refrigerant flow path 32 has a first flow path part 36 provided above the gas intermediate passage 61b, and a second flow path part 37 provided below the gas intermediate passage 61b.

Description

[Technical field]

[0001] The present invention relates to a wafer stage. [Background technology]

[0002] Conventionally, there is known a substrate fixing device that includes a ceramic electrostatic adsorption member having an electrode on which a substrate such as a wafer is placed and adsorbed and held, a cooling plate provided with a gas passage and a water passage, and an adhesive layer that bonds the electrostatic adsorption member and the plate. In Patent Document 1, in such a substrate fixing device, the gas passage extends from the lower surface of the cooling plate to above the water passage, and then branches horizontally above the water passage to communicate with the through hole of the electrostatic adsorption member. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-167481 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, in Patent Document 1, because the horizontally extending portion of the gas path (gas passage) exists between the water path (coolant flow path) and the upper surface (wafer mounting surface) of the electrostatic adsorption member, there are cases where restrictions are imposed on adjustment of the cooling efficiency of the wafer mounting surface, for example, there is a limit to how close the water path can be to the wafer mounting surface, making it impossible to increase the cooling efficiency of the wafer mounting surface, etc. As a result, there are cases where the temperature distribution of the wafer mounting surface cannot be set to a desired temperature distribution.

[0005] The present invention has been made to solve the above problems, and a main object of the present invention is to make it easier to set the temperature distribution on the wafer mounting surface to a desired temperature distribution. [Means for solving the problem]

[0006] In order to achieve the above-mentioned main object, the present invention adopts the following means.

[0007] [1] The wafer mounting table of the present invention comprises: a ceramic plate having a wafer mounting surface on an upper surface thereof and incorporating an electrode; a cooling plate having a coolant flow path and provided on a lower surface side of the ceramic plate; a first ceramic plate penetration portion that penetrates the ceramic plate in a vertical direction and reaches the wafer mounting surface; a second ceramic plate penetration portion that penetrates the ceramic plate in the vertical direction and reaches the wafer mounting surface; a first gas passage provided at least inside the cooling plate and communicating with the first ceramic plate penetration; a second gas passage provided at least inside the cooling plate and communicating with the second ceramic plate penetration; Equipped with the first gas passage has a first gas intermediate passage extending in a direction intersecting the up-down direction, the second gas passage has a second gas intermediate passage extending in a direction intersecting the up-down direction, the second gas intermediate passage is provided above the first gas intermediate passage, The refrigerant flow path has a first flow path portion provided above the first gas intermediate passage and a second flow path portion provided below the second gas intermediate passage. It is something.

[0008] In this wafer mounting table, the second gas intermediate passage of the second gas passage is provided above the first gas intermediate passage of the first gas passage. The coolant flow path has a first flow path section provided above the first gas intermediate passage and a second flow path section provided below the second gas intermediate passage. This allows the first flow path section and the second flow path section to have different cooling efficiencies for the wafer mounting surface. Therefore, by providing the first flow path section and the second flow path section depending on the area of ​​the wafer mounting surface where it is desired to increase or decrease the cooling efficiency, it becomes easier to set the temperature distribution of the wafer mounting surface to a desired temperature distribution.

[0009] [2] In the above-mentioned wafer mounting table (the wafer mounting table described in [1]), the first ceramic plate through-hole and the second ceramic plate through-hole may each be provided in a plurality, the first gas intermediate passage communicates with the plurality of the first ceramic plate through-holes, the second gas intermediate passage communicates with the plurality of the second ceramic plate through-holes, the first gas passage may have a number of first gas introduction passages that are provided to communicate with the first gas intermediate passage and are less than the number of the plurality of the first ceramic plate through-holes, and the second gas passage may have a number of second gas introduction passages that are provided to communicate with the second gas intermediate passage and are less than the number of the plurality of the second ceramic plate through-holes. In this wafer mounting table, the gas introduced from the first gas introduction passage and the second gas introduction passage is distributed to the plurality of the first ceramic plate through-holes and the second ceramic plate through-holes by the first gas intermediate passage and the second gas intermediate passage, respectively, and is supplied to the wafer mounting surface. In order to distribute the gas and supply it to the wafer mounting surface in this manner, the first gas intermediate passage and the second gas intermediate passage are required. In this case, if the first gas intermediate passage and the second gas intermediate passage are positioned in the same vertical position, restrictions will be placed on the arrangement of the refrigerant flow paths, making it difficult to set the temperature distribution on the wafer mounting surface to the desired temperature distribution, and therefore it is highly significant to apply the present invention.

[0010] [3] In the above-mentioned wafer mounting table (the wafer mounting table described in [1] or [2] above), the distance from the wafer mounting surface to the upper bottom of the first flow path section may be shorter than the distance from the wafer mounting surface to the upper bottom of the second flow path section. In this way, the first flow path section can cool the wafer mounting surface more efficiently than the second flow path section, and therefore the temperature distribution of the wafer mounting surface can be easily adjusted by the arrangement of the first flow path section and the second flow path section.

[0011] [4] In the above-mentioned wafer mounting table (the wafer mounting table described in any one of [1] to [3] above), the distance from the wafer mounting surface to the upper bottom of the first flow path section may be equal to or shorter than the distance from the wafer mounting surface to the lower bottom of the second gas intermediate passage. In this way, the wafer mounting surface can be cooled more efficiently by bringing the first flow path section closer to the wafer mounting surface.

[0012] [5] In the above-mentioned wafer mounting table (the wafer mounting table according to any one of [1] to [4] above), the cooling plate has n plate parts, n being an integer of 2 or more, and the wafer mounting table includes first to (n-1)th bonding parts in which two adjacent plate parts among the n plate parts are bonded to each other directly or via a bonding layer, and an nth bonding part in which the ceramic plate and the cooling plate are bonded to each other directly or via a bonding layer, and the first gas intermediate passage may be provided in any one of the first to (n-1)th bonding parts, and the second gas intermediate passage may be provided in a bonding part among the first to nth bonding parts that is above the first gas intermediate passage. In this way, a cooling plate having a first gas intermediate passage and a second gas intermediate passage can be manufactured relatively easily by providing a recess in the bonding part or a punched hole in the bonding layer.

[0013] [6] In the above-mentioned wafer mounting table (the wafer mounting table according to any one of [1] to [5] above), the ceramic plate may be mainly composed of alumina, and the cooling plate may be mainly composed of titanium. In this way, since alumina and titanium have relatively close thermal expansion coefficients, it is possible to suppress the occurrence of defects such as warping of the wafer mounting table due to thermal stress. In addition, titanium has a relatively low thermal conductivity, and therefore it is relatively easy to vary the cooling efficiency of the wafer mounting surface by the arrangement of the first flow path portion and the second flow path portion, making it suitable as a material for the cooling plate of the present invention. [Brief description of the drawings]

[0014] [Figure 1] FIG. [Diagram 2]13 is a cross-sectional view of a second plate portion 82 cut along a horizontal plane passing through intermediate gas passages 62b and 63b, as viewed from above. FIG. [Diagram 3] FIG. 3 is a diagram in which the refrigerant flow path 32 is omitted from FIG. 2. [Figure 4] 4 is a cross-sectional view of a second plate portion 82 cut along a horizontal plane passing through a refrigerant flow path 32 as viewed from above. FIG. [Diagram 5] 5A to 5C are diagrams showing the manufacturing process of the wafer mounting table 10. [Figure 6] 4 is a process diagram showing the machining of first to third plate portions 81 to 83. FIG. [Figure 7] FIG. 2 is a vertical cross-sectional view of the wafer mounting table 10 equipped with a cooling plate 130. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] Next, a preferred embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a vertical cross-sectional view of the wafer mounting table 10, Fig. 2 is a cross-sectional view of the second plate portion 82 cut along a horizontal plane passing through the gas intermediate passages 62b and 63b, as viewed from above, Fig. 3 is a view in which the refrigerant passage 32 is omitted from Fig. 2, and Fig. 4 is a cross-sectional view of the second plate portion 82 cut along a horizontal plane passing through the refrigerant passage 32, as viewed from above. In Figs. 2 and 3, the positions of the gas supply passages 62c and 63c located immediately above the cross-section are indicated by dashed lines.

[0016] As shown in FIG. 1, the wafer mounting table 10 includes a ceramic plate 20, a cooling plate 30, a resin bonding layer 40, a ceramic plate penetration portion 50, and a gas passage 60.

[0017] The ceramic plate 20 has an outer periphery 24 having an annular focus ring mounting surface 24a on the outer periphery of a central portion 22 having a circular wafer mounting surface 22a. Hereinafter, the focus ring may be abbreviated as "FR". A wafer W is mounted on the wafer mounting surface 22a, and a focus ring (not shown) is mounted on the FR mounting surface 24a. The wafer mounting surface 22a is provided with an annular seal band (not shown) along the outer edge of the wafer mounting surface 22a in a top view, and a plurality of small protrusions (not shown) on the entire inner surface of the seal band in a top view. A portion of the wafer mounting surface 22a on which the seal band and small protrusions are not provided is referred to as a reference surface. In this specification, the direction perpendicular to the wafer mounting surface 22a (more specifically, the reference surface) is defined as the up-down direction. The ceramic plate 20 is formed of a ceramic material such as alumina or aluminum nitride. The FR mounting surface 24a is one step lower than the wafer mounting surface 22a.

[0018] The central portion 22 of the ceramic plate 20 incorporates a wafer adsorption electrode 26 on the side close to the wafer mounting surface 22a. The wafer adsorption electrode 26 is formed of a material containing, for example, W, Mo, WC, MoC, etc. The wafer adsorption electrode 26 is a disk-shaped or mesh-shaped monopolar electrostatic adsorption electrode. The layer of the ceramic plate 20 above the wafer adsorption electrode 26 functions as a dielectric layer. The wafer adsorption electrode 26 is connected to an external DC power source via a power supply member (not shown). A low-pass filter may be disposed midway along the power supply member. The power supply member is electrically insulated from the resin bonding layer 40 and the cooling plate 30. When a DC voltage is applied to the wafer adsorption electrode 26, the wafer W is adsorbed and fixed to the wafer mounting surface 22a by electrostatic adsorption force, and when the application of the DC voltage is stopped, the wafer W is released from the adsorption and fixation to the wafer mounting surface 22a.

[0019] The cooling plate 30 is a disk-shaped plate having a refrigerant flow passage 32 through which a refrigerant can flow, and is formed by joining first to third plate portions 81 to 83 together. The refrigerant flowing through the refrigerant flow passage 32 is preferably a liquid, and is preferably electrically insulating. Examples of electrically insulating liquids include fluorine-based inactive liquids. The cooling plate 30 is conductive, and is connected to a radio frequency (RF) power source (not shown) and is also used as an RF electrode. A high-pass filter may be disposed between the cooling plate 30 and the RF power source. The cooling plate 30 has a flange portion 34 on the lower surface side.

[0020] Examples of the material of the first to third plate parts 81 to 83 of the cooling plate 30 include metal materials and composite materials of metal and ceramic. Examples of the metal materials include Al, Ti, Mo, and alloys thereof. Examples of the composite materials of metal and ceramic include metal matrix composite materials (MMC) and ceramic matrix composite materials (CMC). Specific examples of such composite materials include a material containing Si, SiC, and Ti (also called SiSiCTi), a material in which a SiC porous body is impregnated with Al and / or Si, and a composite material of Al2O3 and TiC. It is preferable to select a material for the cooling plate 30 that has a thermal expansion coefficient close to that of the material for the ceramic plate 20. For example, when the main component of the ceramic plate 20 is alumina, it is preferable that the main component of the cooling plate 30 is titanium (Ti). The main component refers to a component with the highest mass ratio. For example, even if the cooling plate 30 is the above-mentioned composite material containing Ti, if the mass ratio of Ti is the highest among all the components contained, it is included in the embodiment in which the main component is Ti. In this embodiment, the first to third plate portions 81 to 83 are not made of a composite material, but are made of Ti except for unavoidable impurities.

[0021] The first to third plate portions 81 to 83 are arranged from bottom to top in the order of first plate portion 81, second plate portion 82, and third plate portion 83, with two adjacent plate portions being directly joined to each other. Specifically, the upper surface of the first plate portion 81 and the lower surface of the second plate portion 82 are directly joined, and this joint portion is referred to as a first joint portion 91. In addition, the upper surface of the second plate portion 82 and the lower surface of the third plate portion 83 are directly joined, and this joint portion is referred to as a second joint portion 92.

[0022] As shown in FIG. 4, the coolant flow path 32 is formed in a single stroke when the cross section of the coolant flow path 32 cut on a horizontal plane is viewed from above. As shown in FIG. 1, the coolant flow path 32 is provided in the area directly below the wafer mounting surface 22a of the cooling plate 30, and is formed so as to be routed throughout this area. The coolant flow path 32 is provided so as to be routed from one end to the other end in a single stroke based on a multiple circle formed by arranging a plurality of imaginary circles (circles C1 to C4 of dashed lines, here, the circles C1 to C4 are concentric circles) having different diameters in a plan view so as not to overlap each other. Specifically, when the coolant flow path 32 is routed from one end to the other end in a single stroke, the coolant flow path 32 is routed so as to trace the imaginary circle while connecting two imaginary circles that are in an inner and outer relationship among the multiple circles. One end of the coolant flow path 32 located on the center side of the cooling plate 30 is connected to the coolant supply path 35, and the other end located on the outer periphery side of the cooling plate 30 is connected to the coolant discharge path 39. The coolant flows in through the coolant supply path 35, passes through the coolant flow path 32, and is discharged from the coolant discharge path 39. The coolant discharged from the coolant discharge path 39 is returned to the coolant supply path 35 after its temperature is adjusted by an external coolant circulator (not shown).

[0023] The distance from the wafer mounting surface 22a (specifically, the reference surface of the wafer mounting surface 22a described above) to the upper bottom of the refrigerant flow path 32 and the distance from the wafer mounting surface 22a to the lower bottom of the refrigerant flow path 32 are not constant throughout the refrigerant flow path 32, being short in some places and long in others, as shown in Fig. 1. The width w of the refrigerant flow path 32 is not constant throughout the refrigerant flow path 32, being narrow in some places and wide in others, as shown in Fig. 1. Note that in Figs. 2 and 4, for convenience, the width w of the refrigerant flow path 32 is assumed to be constant throughout the refrigerant flow path 32.

[0024] The resin bonding layer 40 is a bonding layer made of, for example, epoxy resin, and bonds the lower surface of the ceramic plate 20 to the upper surface of the cooling plate 30. A portion where the ceramic plate 20 and the cooling plate 30 are bonded via the resin bonding layer 40 is referred to as a third bonding portion 93. The third bonding portion 93 includes the lower surface of the ceramic plate 20, the upper surface of the cooling plate 30 (here, the upper surface of the third plate portion 83), and the resin bonding layer 40 therebetween.

[0025] The ceramic plate through-holes 50 are provided in the ceramic plate 20 and communicate with the gas passage 60. As shown in FIG. 1, the ceramic plate through-holes 50 each have a first through-hole 51, a second through-hole 52, and a third through-hole 53. The first through third through-holes 51 to 53 are holes that penetrate the ceramic plate 20 in the vertical direction. The first through third through-holes 51 to 53 are gas passages that extend from the lower surface of the ceramic plate 20 to the wafer mounting surface 22a. The first through third through-holes 51 to 53 are all provided so as to open to a portion of the wafer mounting surface 22a where the above-mentioned seal band or small protrusion is not provided (i.e., the reference surface). The first through third through-holes 51 to 53 are provided corresponding to the gas supply passages 61c to 63c of the gas passage 60, respectively. Specifically, each of the first through-holes 51 corresponds to a corresponding one of the gas supply passages 61c, and the corresponding first through-hole 51 communicates with the corresponding gas supply passage 61c. Similarly, each of the second through-holes 52 communicates with a corresponding one of the gas supply passages 62c, and each of the third through-holes 53 communicates with a corresponding one of the gas supply passages 63c. The first through third through-holes 51-53 are disposed directly above the corresponding gas supply passages 61c-63c.

[0026] The gas passage 60 is a gas passage provided at least inside the cooling plate 30 and communicating with the ceramic plate through-holes 50. The gas passage 60 includes first to third passages 61 to 63. The first passage 61 communicates with the first through-holes 51 of the ceramic plate through-holes 50, the second passage 62 communicates with the second through-holes 52, and the third passage 63 communicates with the third through-holes 53. The gas passage 60 is provided to avoid the refrigerant passage 32 so as not to communicate with the refrigerant passage 32 of the cooling plate 30.

[0027] The first passage 61 has a gas introduction passage 61a, a gas intermediate passage 61b, and a gas supply passage 61c. The gas introduction passage 61a penetrates the first plate portion 81 in the vertical direction. The gas intermediate passage 61b is a passage extending in a direction intersecting the vertical direction. In this embodiment, the gas intermediate passage 61b is provided in a direction perpendicular to the vertical direction, i.e., parallel to the wafer placement surface 22a. Note that "perpendicular" refers not only to a completely perpendicular case, but also to a case where the perpendicular case is within a range of an allowable error (for example, a tolerance) even if the perpendicular case is not completely perpendicular. The same applies to "parallel". The gas intermediate passage 61b is provided in the first joint portion 91. More specifically, a bottomed groove (concave groove) is provided on the lower surface of the second plate portion 82, and the lower surface of the bottomed groove is covered by the upper surface of the first plate portion 81 to form the gas intermediate passage 61b. A plurality of gas supply passages 61c (12 in this embodiment as shown in FIG. 2 and FIG. 3) are provided. The gas supply passages 61c correspond one-to-one to the first through-portions 51, and each of the gas supply passages 61c connects the corresponding first through-portion 51 and the gas intermediate passage 61b. The gas supply passages 61c are each formed as a through-hole extending in the vertical direction. Each of the gas supply passages 61c includes a portion that is provided inside the second plate portion 82 and the third plate portion 83 and vertically penetrates them, and a portion that vertically penetrates the resin bonding layer 40.

[0028] As shown in Figs. 2 and 3, the gas intermediate passage 61b includes a gas auxiliary passage 71a, a gas distribution passage 71b, and a gas auxiliary passage 71c. The gas auxiliary passage 71a is a passage that connects the gas introduction passage 61a and the gas distribution passage 71b. The gas distribution passage 71b is provided in an annular shape as shown in Figs. 2 and 3, and overlaps with the imaginary circle C1 in a plan view. The gas auxiliary passages 71c are provided in the same number as the multiple gas supply passages 61c (12 in this embodiment), and each of them connects the gas distribution passage 71b and the gas supply passage 61c. For one gas distribution passage 71b, a plurality of gas auxiliary passages 71c, gas supply passages 61c, and first through-holes 51 are provided (12 in this embodiment), but the number of gas introduction passages 61a and gas auxiliary passages 71a is less than this number (one for one gas distribution passage 71b in this embodiment).

[0029] The second passage 62 has a gas introduction passage 62a, a gas intermediate passage 62b, and a gas supply passage 62c. The gas introduction passage 62a penetrates the first plate portion 81 and the second plate portion 82 in the vertical direction. The gas intermediate passage 62b is a passage extending in a direction intersecting the vertical direction. In this embodiment, the gas intermediate passage 62b is provided in a direction perpendicular to the vertical direction, i.e., parallel to the wafer placement surface 22a. The gas intermediate passage 62b is provided in the second joint portion 92, and is therefore located above the gas intermediate passage 61b. More specifically, a bottomed groove (recessed groove) is provided on the upper surface of the second plate portion 82, and the upper surface of this bottomed groove is covered by the lower surface of the third plate portion 83 to form the gas intermediate passage 62b. A plurality of gas supply passages 62c (12 in this embodiment as shown in FIGS. 2 and 3) are provided. The gas supply passages 62c correspond one-to-one to the second through-holes 52, and each of the gas supply passages 62c connects the corresponding second through-hole 52 to the gas intermediate passage 62b. The gas supply passages 62c are each formed as a through-hole extending in the vertical direction. Each of the gas supply passages 62c includes a portion that is provided inside the third plate portion 83 and vertically penetrates it, and a portion that vertically penetrates the resin bonding layer 40.

[0030] As shown in Fig. 2 and Fig. 3, the gas intermediate passage 62b includes a gas auxiliary passage 72a and a gas distribution passage 72b. The gas auxiliary passage 72a is a passage that connects the gas introduction passage 62a and the gas distribution passage 72b. As shown in Fig. 2 and Fig. 3, the gas distribution passage 72b is provided in an annular shape and overlaps with the imaginary circle C2 in a plan view. A plurality of gas supply passages 62c are provided directly above the gas distribution passage 72b and are connected to the gas distribution passage 72b. A plurality of gas supply passages 62c and a plurality of second through-holes 52 (12 in this example) are provided for one gas distribution passage 72b, but a smaller number of gas introduction passages 62a and a smaller number of gas auxiliary passages 72a are provided (one for one gas distribution passage 72b in this example).

[0031] The third passage 63 has a gas introduction passage 63a, a gas intermediate passage 63b, and a gas supply passage 63c. The gas introduction passage 63a penetrates the first plate portion 81 and the second plate portion 82 in the vertical direction. The gas intermediate passage 63b is a passage extending in a direction intersecting the vertical direction. In this embodiment, the gas intermediate passage 63b is provided in a direction perpendicular to the vertical direction, i.e., parallel to the wafer placement surface 22a. The gas intermediate passage 63b is provided in the second joint portion 92, like the gas intermediate passage 62b, and is located above the gas intermediate passage 61b. More specifically, a bottomed groove (recessed groove) is provided on the upper surface of the second plate portion 82, and the upper surface of this bottomed groove is covered by the lower surface of the third plate portion 83 to form the gas intermediate passage 63b. A plurality of gas supply passages 63c (12 in this embodiment as shown in FIGS. 2 and 3) are provided. The gas supply passages 63c correspond one-to-one to the third through-holes 53, and each of the gas supply passages 63c connects the corresponding third through-hole 53 to the gas intermediate passage 63b. The gas supply passages 63c are each formed as a through-hole extending in the vertical direction. Each of the gas supply passages 63c includes a portion that is provided inside the third plate portion 83 and vertically penetrates it, and a portion that vertically penetrates the resin bonding layer 40.

[0032] As shown in Fig. 2 and Fig. 3, the gas intermediate passage 63b includes a gas auxiliary passage 73a and a gas distribution passage 73b. The gas auxiliary passage 73a is a passage that connects the gas introduction passage 63a and the gas distribution passage 73b. As shown in Fig. 2 and Fig. 3, the gas distribution passage 73b is provided in an annular shape and overlaps with the imaginary circle C3 in a plan view. A plurality of gas supply passages 63c are provided directly above the gas distribution passage 73b and are connected to the gas distribution passage 73b. A plurality of gas supply passages 63c and a plurality of third through-holes 53 (12 in this example) are provided for one gas distribution passage 73b, but a smaller number of gas introduction passages 63a and a smaller number of gas auxiliary passages 73a are provided (one for one gas distribution passage 73b in this example).

[0033] Here, the positional relationship between the refrigerant flow path 32 and the gas passage 60 will be described. The refrigerant flow path 32 has a first flow path section 36 provided above the gas intermediate passage 61b, a second flow path section 37 provided below the gas intermediate passage 62b and the gas intermediate passage 63b, and a connection section 38 connecting the first flow path section 36 and the second flow path section 37. The first flow path section 36 is a part of the refrigerant flow path 32 shown by a solid line in FIG. 2. The first flow path section 36 includes a part of the refrigerant flow path 32 that overlaps with the imaginary circle C1 and a straight line section from the imaginary circle C1 to the connection section 38. The part of the first flow path section 36 that overlaps with the imaginary circle C1 is located directly above the gas intermediate passage 61b (particularly the gas distribution passage 71b) that also overlaps with the imaginary circle C1. The second flow path section 37 is a part of the refrigerant flow path 32 shown by a dashed line in FIG. 2. The second flow path section 37 includes a straight line portion from the connection portion 38 to the imaginary circle C2 of the refrigerant flow path 32, a portion overlapping the imaginary circles C2 to C4, and a straight line portion connecting adjacent imaginary circles among the imaginary circles C2 to C4. The portions of the second flow path section 37 overlapping the imaginary circles C2 and C3 are located directly below the gas intermediate passages 62b and 63b (particularly the gas distribution passages 72b and 73b) that also overlap the imaginary circles C2 and C3. The first flow path section 36 is formed by a bottomed groove provided on the upper surface of the second plate section 82 and a bottomed groove provided at a position facing the bottomed groove on the lower surface of the third plate section 83. The second flow path section 37 is formed by a bottomed groove provided on the upper surface of the first plate section 81 and a bottomed groove provided at a position facing the bottomed groove on the lower surface of the second plate section 82.

[0034] As shown in FIG. 1, the distance d2 from the wafer placement surface 22a to the lower bottom of the first flow path portion 36 is shorter than the distance D1 from the wafer placement surface 22a to the upper bottom of the gas intermediate passage 61b (that is, d2 < D1 is satisfied). In other words, the lower bottom of the first flow path portion 36 is located above the upper bottom of the gas intermediate passage 61b. Thereby, the first flow path portion 36 is located above the gas intermediate passage 61b. Further, the distance d3 from the wafer placement surface 22a to the upper bottom of the second flow path portion 37 is longer than the distance D2 from the wafer placement surface 22a to the lower bottoms of the gas intermediate passages 62b and 63b (that is, D2 < d3 is satisfied). In other words, the upper bottom of the second flow path portion 37 is located below the lower bottoms of the gas intermediate passages 62b and 63b. Thereby, the second flow path portion 37 is located below the gas intermediate passage 62b and the gas intermediate passage 63b.

[0035] Also, the distance d1 from the wafer placement surface 22a to the upper bottom of the first flow path portion 36 is shorter than the above-described distance d3 (that is, d1 < d3 is satisfied). In other words, the upper bottom of the first flow path portion 36 is located above the upper bottom of the second flow path portion 37. In the present embodiment, the distance d1 is set to the same value at any position of the first flow path portion 36, and the distance d3 is set to the same value at any position of the second flow path portion 37. Similarly, the above-described distance d2 is shorter than the distance d4 from the wafer placement surface 22a to the lower bottom of the second flow path portion 37 (that is, d2 < d4 is satisfied). In other words, the lower bottom of the first flow path portion 36 is located above the lower bottom of the second flow path portion 37. In the present embodiment, the distance d2 is set to the same value at any position of the first flow path portion 36, and the distance d4 is set to the same value at any position of the second flow path portion 37. Also, the distance d2 is longer than the distance d3 (that is, d3 < d2 is satisfied). Thus, in the present embodiment, the distances d1 to d4 satisfy d1 < d3 < d2 < d4. The connecting portion 38 connects the first flow path portion 36 and the second flow path portion 37 by providing step portions on the upper bottom and the lower bottom, respectively. Note that the connecting portion 38 may connect the first flow path portion 36 and the second flow path portion 37 by providing an inclined portion in which the upper bottom and the lower bottom gradually change.

[0036] Further, the distance d1 is the same as or shorter than the above-described distance D2 (i.e., it satisfies d1 ≤ D2). In other words, at least a part of the region from the upper base to the lower base of the first flow path portion 36 is located at the same level as or above the lower base of the gas intermediate passages 62b and 63b. Note that the fact that the distance d1 and the distance D2 are "the same" means that not only when they are exactly the same, but also when they are regarded as the same if the difference between the distance d1 and the distance D2 is within an allowable error (e.g., tolerance) range even if they are not exactly the same. In the present embodiment, as shown in FIG. 1, the distance d1 is shorter than the distance D2 (i.e., it satisfies d1 < D2). Also, in the present embodiment, the distance D2 has the same value at any position of the gas intermediate passages 62b and 63b. Further, the distance d4 is the same as or longer than the above-described distance D1 (i.e., it satisfies D1 ≤ d4). In other words, at least a part of the region from the upper base to the lower base of the second flow path portion 37 is located at the same level as or below the upper base of the gas intermediate passage 61b. Note that the fact that the distance d4 and the distance D1 are "the same" means that not only when they are exactly the same, but also when they are regarded as the same if the difference between the distance d4 and the distance D1 is within an allowable error (e.g., tolerance) range even if they are not exactly the same. Also, in the present embodiment, as shown in FIG. 1, the distance d4 is longer than the distance D1 (i.e., it satisfies D1 < d4). Also, in the present embodiment, the distance D1 has the same value at any position of the gas intermediate passage 61b.

[0037] Next, a manufacturing example of the wafer stage 10 will be described with reference to FIGS. 5 and 6. FIG. 5 is a manufacturing process diagram of the wafer stage 10, and FIG. 6 is a processing process diagram of the first to third plate portions 81 to 83.

[0038] First, a ceramic plate 20 is produced by hot press sintering a molded body of ceramic powder (alumina powder in the present embodiment) (FIG. 5A). The ceramic plate 20 incorporates an electrode 26 for wafer adsorption. Next, a ceramic plate through-hole 50 is formed in the ceramic plate 20 (FIG. 5B). The ceramic plate through-hole 50 is formed so as to penetrate the ceramic plate 20 in the vertical direction while avoiding the electrode 26 for wafer adsorption.

[0039] In parallel with this, the first to third plate parts 81 to 83, which are disc members having no holes or grooves, are prepared (FIG. 6A). In this embodiment, three Ti disc members are prepared to form the first to third plate parts 81 to 83. Then, through holes and grooves are appropriately formed in these first to third plate parts 81 to 83 by machining (FIG. 6B). For example, the first plate part 81 is formed with a through hole 81a that will eventually become the gas introduction passage 61a, and two through holes 81b that will eventually become parts of the gas introduction passages 62a and 63a. In addition, a bottomed groove 81c that will eventually become part of the second flow passage part 37 is formed on the upper surface of the first plate part 81. The second plate part 82 is formed with a plurality of through holes 82a that will eventually become parts of the plurality of gas supply passages 61c, and two through holes 82b that will eventually become parts of the gas introduction passages 62a and 63a. Further, a bottomed groove 82c that will eventually become the gas intermediate passage 61b and a bottomed groove 82d that will eventually become part of the second flow path section 37 are formed in the lower surface of the second plate section 82. A bottomed groove 82e that will eventually become the gas intermediate passages 62b, 63b and a bottomed groove 82f that will eventually become part of the first flow path section 36 are formed in the upper surface of the second plate section 82. A plurality of through holes 83a that will eventually become part of the plurality of gas supply passages 61c to 63c are formed in the third plate section 83. Further, a bottomed groove 83b that will eventually become part of the first flow path section 36 is formed in the lower surface of the third plate section 83.

[0040] Next, the first to third plate portions 81 to 83 are stacked and bonded (FIG. 6C). For example, diffusion bonding can be used as a bonding method. Diffusion bonding is a known method in which metals (here, the first to third plate portions 81 to 83, i.e., Ti) are directly contacted with each other and bonded by diffusing the metal between the bonding surfaces at a temperature below the melting point of the metal and under pressure to the extent that plastic deformation is minimized. In this way, the first bonding portion 91 is formed to bond the first plate portion 81 and the second plate portion 82, and the second bonding portion 92 is formed to bond the second plate portion 82 and the third plate portion 83, thereby obtaining the cooling plate 30.

[0041] Returning to FIG. 5, a resin sheet 90 is placed between the lower surface of the ceramic plate 20 after the ceramic plate through-hole 50 is formed and the upper surface of the cooling plate 30, and these are laminated (FIG. 5C). Through holes are previously opened in the resin sheet 90 at positions facing the ceramic plate through-hole 50 of the ceramic plate 20 and the through-holes (parts of the gas supply passages 61c to 63c) of the third plate portion 83. The laminate thus obtained is heated and pressurized, so that the ceramic plate 20 and the cooling plate 30 are bonded by the resin sheet 90. As a result, the resin sheet 90 becomes a resin bonding layer 40, and a third bonding portion 93 is formed in which the lower surface of the ceramic plate 20 and the upper surface of the cooling plate 30 are bonded via the resin bonding layer 40, thereby obtaining a bonded body 110 (FIG. 5D).

[0042] For example, epoxy resin can be used as the resin sheet 90. The resin sheet 90 preferably has a thickness of about 100 μm. The through holes pre-opened in the resin sheet 90 may be deformed during bonding, so it is preferable that the through holes have a larger diameter than the through holes of the ceramic plate through portion 50 and the third plate portion 83.

[0043] Next, the outer periphery of the ceramic plate 20 is cut to form a step, thereby forming a structure having a central portion 22 and an outer periphery 24. Also, by cutting the outer periphery of the cooling plate 30 to form a step, Yo This results in a structure having a flange portion 34. In this way, the wafer stage 10 is obtained (FIG. 5E).

[0044] Next, an example of use of the wafer mounting table 10 will be described. First, with the wafer mounting table 10 installed in a chamber (not shown), a focus ring is placed on the FR mounting surface 24a, and the wafer W is placed on the wafer mounting surface 22a. Then, the chamber is depressurized by a vacuum pump to adjust the pressure to a predetermined vacuum level, and a direct current voltage is applied to the wafer adsorption electrode 26 of the ceramic plate 20 to generate an electrostatic adsorption force, and the wafer W is adsorbed and fixed to the wafer mounting surface 22a (specifically, the upper surface of the seal band or the upper surface of the small protrusions). Next, the chamber is made into a reactive gas atmosphere with a predetermined pressure (for example, several tens to several hundreds of Pa), and in this state, an RF voltage is applied between an upper electrode (not shown) provided on the ceiling part of the chamber and the cooling plate 30 of the wafer mounting table 10 to generate plasma. The surface of the wafer W is processed by the generated plasma. A coolant is circulated through the coolant passage 32 of the cooling plate 30. A backside gas is introduced from a gas cylinder (not shown) into the gas introduction passages 61a to 63a of the gas passage 60. A thermally conductive gas (e.g., He gas, etc.) is used as the backside gas. The backside gas introduced into the gas introduction passage 61a is distributed to a plurality of gas supply passages 61c through the gas intermediate passage 61b, and is supplied and sealed in the space between the backside of the wafer W and the reference surface of the wafer mounting surface 22a through the plurality of first through-holes 51. Similarly, the backside gas introduced into the gas introduction passage 62a and the gas introduction passage 63a is distributed to a plurality of gas supply passages 62c and 63c through the gas intermediate passages 62b and 63b, and is supplied and sealed in the space between the backside of the wafer W and the reference surface of the wafer mounting surface 22a through the plurality of second through-holes 52 and the third through-holes 53. The presence of these backside gases efficiently conducts heat between the wafer W and the ceramic plate 20. The focus ring is also worn out as the wafer W is plasma-processed, but since the focus ring is thicker than the wafer W, the focus ring is replaced after processing a plurality of wafers W.

[0045] Here, the coolant flow passage 32 has the first flow passage portion 36 provided above the gas intermediate passage 61b, and the second flow passage portion 37 provided below the gas intermediate passage 62b and the gas intermediate passage 63b, as described above. This allows the first flow passage portion 36 and the second flow passage portion 37 to have different cooling efficiencies for the wafer mounting surface 22a when the wafer W is plasma-processed using the wafer mounting table 10. Therefore, by providing the first flow passage portion 36 and the second flow passage portion 37 depending on the portion of the wafer mounting surface 22a where the cooling efficiency is desired to be increased or decreased, the temperature distribution of the wafer mounting surface 22a can be easily set to a desired temperature distribution. This makes it easy to set the temperature distribution of the wafer W to a desired temperature distribution. For example, in this embodiment, the first flow passage portion 36 is provided near the outer periphery of the wafer mounting surface 22a when viewed from above, and the second flow passage portion 37 is provided closer to the center of the wafer mounting surface 22a than the first flow passage portion 36. Also, the distance d1 is shorter than the distance d3, that is, the first flow path section 36 is closer to the wafer mounting surface 22a than the second flow path section 37. As a result, the first flow path section 36 can cool the wafer mounting surface 22a more efficiently than the second flow path section 37, and can therefore cool the vicinity of the periphery of the wafer mounting surface 22a more efficiently than the center. This can improve the thermal uniformity of the wafer W, for example, when the temperature of the wafer W tends to be high near the periphery. Alternatively, the temperature distribution can be set so that the temperature of the wafer W near the periphery is lower than the center.

[0046] Furthermore, the cooling efficiency of the wafer mounting surface 22a by the coolant flow passage 32 can be adjusted by adjusting the flow passage cross-sectional area of ​​the coolant flow passage 32. Where the flow passage cross-sectional area is small, the pressure loss increases, promoting heat exchange between the coolant and the wafer W, and increasing the cooling efficiency. The flow passage cross-sectional area can be adjusted by changing, for example, one or more of the difference between the distance d1 and the distance d2, the difference between the distance d3 and the distance d4, and the width w. Therefore, by adjusting the flow passage cross-sectional area according to where the cooling efficiency is desired to be increased or decreased in the coolant flow passage 32, the temperature distribution of the wafer mounting surface 22a can be set to a more desired temperature distribution.

[0047] In the above-mentioned embodiment, the first through-hole 51 corresponds to the first ceramic plate through-hole, the second through-hole 52 and the third through-hole 53 correspond to the second ceramic plate through-hole, the first passage 61 corresponds to the first gas passage, the second passage 62 and the third passage 63 correspond to the second gas passage, the gas intermediate passage 61b corresponds to the first gas intermediate passage, the gas intermediate passage 62b and the gas intermediate passage 63b correspond to the second gas intermediate passage, the gas introduction passage 61a corresponds to the first gas introduction passage, and the gas introduction passage 62a and the gas introduction passage 63a correspond to the second gas introduction passage.

[0048] In the wafer mounting table 10 of the present embodiment described above, the gas intermediate passage 62b of the second passage 62 and the gas intermediate passage 63b of the third passage 63 are provided above the gas intermediate passage 61b of the first passage 61. The coolant passage 32 has the first passage section 36 provided above the gas intermediate passage 61b and the second passage section 37 provided below the gas intermediate passage 62b and the gas intermediate passage 63b. This allows the first passage section 36 and the second passage section 37 to have different cooling efficiencies for the wafer mounting surface 22a. Therefore, by providing the first passage section 36 and the second passage section 37 depending on the location of the wafer mounting surface 22a where the cooling efficiency is desired to be increased or decreased, the temperature distribution of the wafer mounting surface 22a can be easily set to a desired temperature distribution.

[0049] Also, the gas introduced from the gas introduction passage 61a is distributed to the multiple first through-holes 51 in the gas intermediate passage 61b and supplied to the wafer placement surface 22a. Similarly, the gas introduced from the gas introduction passage 62a is distributed to the multiple second through-holes 52 in the gas intermediate passage 62b and supplied to the wafer placement surface 22a, and the gas introduced from the gas introduction passage 63a is distributed to the multiple third through-holes 53 in the gas intermediate passage 63b and supplied to the wafer placement surface 22a. In order to distribute the gas in each of the first to third passages 61 to 63 and supply it to the wafer placement surface 22a in this manner, each of the first to third passages 61 to 63 cannot be only a through hole along the vertical direction, but gas intermediate passages 61b to 63b extending in a direction intersecting the vertical direction are required. In this case, if the vertical positions of the gas intermediate passages 61b to 63b are the same, restrictions will be imposed on the arrangement of the refrigerant flow passages 32. For example, when the refrigerant flow passage 32 is provided in a single stroke, it is difficult to provide the refrigerant flow passage 32 so that it passes both above and below the gas intermediate passages 61b-63b and avoids the gas introduction passages 61a-63a and the gas supply passages 61c-63c. As a result, it is difficult to set the temperature distribution of the wafer mounting surface 22a to a desired temperature distribution. In contrast, by applying the present invention and providing the gas intermediate passages 62b, 63b above the gas intermediate passage 61b, it becomes easy for the refrigerant flow passage 32 to avoid the gas introduction passages 61a-63a and the gas supply passages 61c-63c even if the first flow passage section 36 is provided above the gas intermediate passage 61b and the second flow passage section 37 is provided below the gas intermediate passages 62b, 63b. As a result, it is easy to set the temperature distribution of the wafer mounting surface 22a to a desired temperature distribution by the first flow passage section 36 and the second flow passage section 37. In this way, when the intermediate gas passages 61b to 63b for distributing gas are provided, it is highly meaningful to apply the present invention.

[0050] Furthermore, the distance d1 from the wafer mounting surface 22a to the upper bottom of the first flow path section 36 is shorter than the distance d3 from the wafer mounting surface 22a to the upper bottom of the second flow path section 37. As a result, the first flow path section 36 can cool the wafer mounting surface 22a more efficiently than the second flow path section 37, and therefore the temperature distribution of the wafer mounting surface 22a can be easily adjusted by the arrangement of the first flow path section 36 and the second flow path section 37.

[0051] Furthermore, the distance d1 from the wafer mounting surface 22a to the upper bottom of the first flow path section 36 is equal to or shorter than the distance D2 from the wafer mounting surface 22a to the lower bottoms of the gas intermediate passages 62b and 63b. This brings the first flow path section 36 closer to the wafer mounting surface 22a, thereby enabling the wafer mounting surface 22a to be cooled more efficiently.

[0052] The cooling plate 30 has three plate parts (first to third plate parts 81 to 83). The wafer mounting table 10 has first and second bonding parts 91 and 92 in which two adjacent plate parts of the three plate parts are directly bonded to each other, and a third bonding part 93 in which the ceramic plate 20 and the cooling plate 30 are bonded via a resin bonding layer 40. The gas intermediate passage 61b is provided in the first bonding part 91, and the gas intermediate passage 62b and the gas intermediate passage 63b are provided in the second bonding part 92 above the first bonding part 91. In this way, by providing the gas intermediate passages 62b and 63b above the gas intermediate passage 61b and providing each of the gas intermediate passages 61b to 63b in one of the bonding parts of the first to third bonding parts 91 to 93, the cooling plate 30 having the gas intermediate passages 61b to 63b can be manufactured relatively easily by the bottomed grooves (recesses) provided in the bonding parts.

[0053] The main component of the ceramic plate 20 is alumina, and the main component of the cooling plate 30 is titanium. As a result, since the thermal expansion coefficients of alumina and titanium are relatively close, it is possible to suppress the occurrence of defects such as warping of the wafer mounting table 10 due to thermal stress. Furthermore, since the thermal conductivity of titanium is lower than that of, for example, aluminum, it is relatively easy to make the cooling efficiency of the wafer mounting surface 22a different by disposing the first flow path portion 36 and the second flow path portion 37 (for example, by making the distance d1 and the distance d3 different). Therefore, titanium is suitable as a material for the cooling plate 30.

[0054] It goes without saying that the present invention is not limited to the above-described embodiment, and can be embodied in various forms within the technical scope of the present invention.

[0055] For example, in the above-mentioned embodiment, the ceramic plate 20 and the cooling plate 30 are bonded with the resin bonding layer 40, but a conductive bonding layer may be used instead of the resin bonding layer 40. For example, a metal bonding layer may be used as the conductive bonding layer. The metal bonding layer may be formed by, for example, TCB (thermal compression bonding). TCB refers to a known method in which a metal bonding material is sandwiched between two members to be bonded, and the two members are pressurized and bonded while being heated to a temperature below the solidus temperature of the metal bonding material. For example, TCB is performed as follows. In FIG. 5C, a metal bonding material is prepared instead of the resin sheet 90, and the ceramic plate 20, the metal bonding material, and the cooling plate 30 are laminated to obtain a laminate. This laminate is pressed and bonded at a temperature below the solidus temperature of the metal bonding material (for example, a temperature 20°C lower than the solidus temperature and below the solidus temperature), and then returned to room temperature. As a result, the metal bonding material becomes a conductive bonding layer, and the lower surface of the ceramic plate 20 and the upper surface of the cooling plate 30 are bonded via the conductive bonding layer. As the metal bonding material, an Al-Mg based bonding material or an Al-Si-Mg based bonding material can be used. For example, when performing TCB using an Al-Si-Mg based bonding material, the laminate is pressurized in a heated state under a vacuum atmosphere. It is preferable to use a metal bonding material with a thickness of about 100 μm.

[0056] In the above-described embodiment, the first to third plate parts 81 to 83 are directly bonded to each other by two adjacent plate parts, but this is not limited thereto, and at least two of the first to third plate parts 81 to 83 may be bonded to each other via an adhesive layer. For example, a cooling plate 130 shown in FIG. 7 may be used instead of the cooling plate 30 in the above-described embodiment. In FIG. 7, the same components as those in the above-described embodiment are given the same reference numerals. The cooling plate 130 includes, in addition to the first to third plate parts 81 to 83, a first inner bonding layer 84 that bonds the first plate part 81 and the second plate part 82, and a second inner bonding layer 85 that bonds the second plate part 82 and the third plate part 83. The portion where the first plate part 81 and the second plate part 82 are bonded to each other via the first inner bonding layer 84 is referred to as a first bonding part 191. The first bonding portion 191 includes the upper surface of the first plate portion 81, the lower surface of the second plate portion 82, and the first inner bonding layer 84 therebetween. The portion where the second plate portion 82 and the third plate portion 83 are bonded via the second inner bonding layer 85 is referred to as the second bonding portion 192. The second bonding portion 192 includes the upper surface of the second plate portion 82, the lower surface of the third plate portion 83, and the second inner bonding layer 85 therebetween. The first inner bonding layer 84 and the second inner bonding layer 85 are appropriately provided with through holes that become part of the above-mentioned gas passage 60 and the refrigerant flow path 32. For example, in FIG. 7, the gas introduction passage 61a penetrates the first plate portion 81 and the first inner bonding layer 84 in the vertical direction. The gas introduction passages 62a and 63a respectively penetrate the first plate portion 81 and the second plate portion 82 and the first inner bonding layer 84 therebetween in the vertical direction. The first flow path portion 36 is formed by a bottomed groove provided on the upper surface of the second plate portion 82, a through hole provided in the second inner bonding layer 85 at a position facing the bottomed groove, and a bottomed groove provided in the lower surface of the third plate portion 83 at a position facing the through hole. The gas intermediate passage 61b is provided in the first bonding portion 191. More specifically, the bottomed groove (recessed groove) provided on the lower surface of the second plate portion 82 is covered by the upper surface of the first inner bonding layer 84, thereby forming the gas intermediate passage 61b. The first inner bonding layer 84 and the second inner bonding layer 85 can be formed in the same manner as the above-mentioned conductive bonding layer.

[0057] In the above-described embodiment, the cooling plate 30 and the ceramic plate 20 are bonded to each other via the resin bonding layer 40, but the present invention is not limited to this and the cooling plate 30 and the ceramic plate 20 may be bonded to each other directly. In this case, the third bonding portion 93 includes the upper surface of the cooling plate 30 and the lower surface of the ceramic plate 20.

[0058] In the above-mentioned embodiment, the cooling plate 30 has the first to third plate parts 81 to 83, but is not limited thereto. The cooling plate 30 may have n plate parts, where n is an integer of 2 or more. In this case, the joint parts where two adjacent plate parts of the n plate parts are joined to each other directly or through a joint layer are defined as the first to (n-1)th joint parts. Also, the joint part where the ceramic plate 20 and the cooling plate 30 are joined to each other directly or through a joint layer is defined as the nth joint part. In this case, the first gas intermediate passage is provided in any one of the first to (n-1)th joint parts, and the second gas intermediate passage is provided in a joint part above the first gas intermediate passage among the first to nth joint parts. In this way, the same effect as that of the above-mentioned embodiment can be obtained even when the cooling plate 30 has n plate parts. In other words, by providing the second gas intermediate passage above the first gas intermediate passage and providing each of the first and second gas intermediate passages at any one of the first to nth joints, it is possible to relatively easily manufacture the cooling plate 30 having the first and second gas intermediate passages.

[0059] In the above-mentioned embodiment, the gas intermediate passage 61b provided in the first bonding portion 91 is formed by a bottomed groove provided on the lower surface of the second plate portion 82 and the upper surface of the first plate portion 81, but is not limited thereto. For example, the gas intermediate passage 61b may be formed by a bottomed groove provided on the upper surface of the first plate portion 81 and the lower surface of the second plate portion 82, or may be formed by a bottomed groove provided on the upper surface of the first plate portion 81 and a bottomed groove provided on the lower surface of the second plate portion 82. When the first inner bonding layer 84 is present as shown in FIG. 7, in either of these embodiments, the through hole of the first inner bonding layer 84 may also form a part of the gas intermediate passage 61b. Also, a part of the gas intermediate passage 61b may be formed by a bottomed groove formed in the first inner bonding layer 84. For example, the gas intermediate passage 61b may be formed by a bottomed groove formed on the upper surface of the first inner bonding layer 84 and a bottomed groove formed on the lower surface of the second plate portion 82 or the lower surface of the second plate portion 82. All of these embodiments correspond to specific examples of the gas intermediate passage 61b provided in the first bonding portion 91. The same applies to the gas intermediate passages 62b, 63b provided in the second bonding portion 92. The above is also true when at least one of the gas intermediate passages 62b, 63b is provided in the third bonding portion 93. For example, the gas intermediate passage 63b may be formed by a bottomed groove provided on the upper surface of the third plate portion 83 and the lower surface of the resin bonding layer 40, a bottomed groove provided on the upper surface of the third plate portion 83 and a bottomed groove provided on the lower surface of the resin bonding layer 40, a bottomed groove provided on the upper surface of the third plate portion 83 and the lower surface of the resin bonding layer 40, or a through hole provided on the upper surface of the third plate portion 83, the resin bonding layer 40, and the lower surface of the ceramic plate 20.

[0060] In the above-described embodiment, the gas intermediate passages 61b-63b are provided in the first bonding portion 91 or the second bonding portion 92, respectively. However, one or more of the first bonding portion 91 and the second bonding portion 92 may not be specified after the wafer mounting table 10 is manufactured. That is, when the first to third plate portions 81-83 are made of the same material, the interface between the first plate portion 81 and the second plate portion 82 or the interface between the second plate portion 82 and the third plate portion 83 may not be specified in the cooling plate 30. When one or more of the first bonding portion 91 and the second bonding portion 92 cannot be specified, the cooling plate 30 can be regarded as not having the bonding portion that cannot be specified. Also, when none of the bonding portions inside the cooling plate 30 can be specified, for example, when the first bonding portion 91 and the second bonding portion 92 cannot be specified, the cooling plate 30 can be regarded as being composed of a single plate portion without having a plurality of plate portions.

[0061] In the above-described embodiments, for the distances d1 to d4 and the distances D1 and D2, it was assumed that all of d1 < d3, d2 < d4, d3 < d2, d1 < d3 < d2 < d4, d1 ≤ D2, and D1 ≤ d4 were satisfied. However, this is not restrictive, and one or more of these may not be satisfied. Even in this case, as long as the gas intermediate passages 62b and 63b are provided above the gas intermediate passage 61b, and the first flow path portion 36 is provided above the gas intermediate passage 61b (i.e., d2 < D1 is satisfied), and the second flow path portion 37 is provided below the gas intermediate passages 62b and 63b (i.e., D2 < d3 is satisfied). For example, d1 may be equal to d3 or d1 may be greater than d3. For example, even when d1 = d3, there is no gas passage 60 directly above the first flow path portion 36, whereas there are gas intermediate passages 62b and 63b and gas supply passages 62c and 63c directly above at least a part of the second flow path portion 37. Therefore, in the portion of the second flow path portion 37 where the gas intermediate passages 62b and 63b and the gas supply passages 62c and 63c are present directly above, the cooling efficiency of the wafer placement surface 22a is likely to decrease compared to the first flow path portion 36. Therefore, even when d1 = d3, the temperature distribution of the wafer placement surface 22a can be adjusted by adjusting the positions of the first flow path portion 36 and the second flow path portion 37. Similarly, even when d1 > d3, since the cooling efficiency is likely to decrease in the portion of the second flow path portion 37 where the gas intermediate passages 62b and 63b and the gas supply passages 62c and 63c are present directly above as described above, for example, the difference between the distance d1 and the distance d3 can be reduced so that the cooling efficiency of the first flow path portion 36 with respect to the wafer placement surface 22a becomes higher, or conversely, the difference between the distance d1 and the distance d3 can be increased so that the cooling efficiency of the second flow path portion 37 with respect to the wafer placement surface 22a becomes higher.

[0062] In the above-described embodiments, as shown in FIG. 2, in a top view, most of the first flow path portion 36 overlaps with the gas intermediate passage 61b (particularly the gas distribution passage 71b) at a position overlapping with the virtual circle C1, and most of the second flow path portion 37 overlaps with the virtual circles C2 and C3 at a position DegaAlthough it overlaps with the intermediate passages 62b and 63b (particularly the gas distribution passages 72b and 73b), it is not limited to this. The first flow path portion 36 is located above the gas intermediate passage 61b (that is, it satisfies d2 < D1), and the second flow path portion 37 may be located below the gas intermediate passages 62b and 63b (that is, it satisfies D2 < d3). For example, in a top view, the first flow path portion 36 and the gas intermediate passage 61b may be arranged so as to be displaced or intersect. Note that it is preferable that at least a part of the first flow path portion 36 is located directly above the gas intermediate passage 61b, and at least a part of the second flow path portion 37 is located directly below at least one of the gas intermediate passages 62b and 63b.

[0063] In the above-described embodiment, it is assumed that the distances d1 and d2 have the same value at any position of the first flow path portion 36 (the values of the distances d1 and d2 do not change over the entire first flow path portion 36), but it is not limited to this. For at least one of the distances d1 and d2, there may be short and long portions that are not constant over the entire first flow path portion 36. The same applies to the distances d3 and d4 and the distances D1 and D2. When one or more of the distances d1 to d4, D1, and D2 are values that are not constant and change, the magnitude relationship of the above-described distances is considered to be satisfied when the magnitude relationship is satisfied in both the comparison of the minimum values and the comparison of the maximum values. For example, when the distances d1 and d3 are both values that change, if the minimum value of the distance d1 is smaller than the minimum value of the distance d3 and the maximum value of the distance d1 is smaller than the maximum value of the distance d3, it is considered that d1 < d3 is satisfied. When the value of the distance does not change (is constant), both the maximum value and the minimum value are the constant value. However, it is preferable that the magnitude relationship of the above-described distances is satisfied even when any of the changing values are compared. For example, when the distances d1 and d3 are both values that change, if the minimum value of the distance d1 is smaller than the minimum value of the distance d3 and the maximum value of the distance d1 is smaller than the maximum value of the distance d3, it is considered that d1 < d3 is satisfied, and it is more preferable that the maximum value of the distance d1 is smaller than the minimum value of the distance d3.

[0064] In the above-described embodiment, the coolant flow path 32 may further have a portion that is neither the first flow path portion 36 nor the second flow path portion 37. For example, for portions of the second flow path portion 37 that overlap with the imaginary circles C3 and C4 shown in Figs. 2 and 4 (two central portions among six cross sections of the second flow path portion 37 shown in Fig. 1), the distance from the wafer placement surface 22a to the upper bottom of the portion may be shorter than the distance D2. In this case, the upper bottom of the portion is located above the lower bottoms of the gas intermediate passages 62b and 63b, and the lower bottom is located below the upper bottom of the gas intermediate passage 61b, so that the portion is different from both the first flow path portion 36 and the second flow path portion 37.

[0065] In the above-described embodiment, the first flow path portion 36 is formed by a bottomed groove provided on the upper surface of the second plate portion 82 and a bottomed groove provided on the lower surface of the third plate portion 83 at a position facing the bottomed groove, but is not limited thereto. For example, the first flow path portion 36 may be formed by a bottomed groove provided on the upper surface of the second plate portion 82 and the lower surface of the third plate portion 83, or may be formed by a bottomed groove provided on the lower surface of the third plate portion 83 and the upper surface of the second plate portion 82, or may be formed by a through groove that vertically penetrates the third plate portion 83, the lower surface of the resin bonding layer 40, and the upper surface of the second plate portion 82. Similarly, the second flow path portion 37 is formed by a bottomed groove provided on the upper surface of the first plate portion 81 and a bottomed groove provided on the lower surface of the second plate portion 82 at a position facing the bottomed groove, but is not limited thereto. For example, the second flow path portion 37 may be formed by a bottomed groove provided on the upper surface of the first plate portion 81 and the lower surface of the second plate portion 82, or by a bottomed groove provided on the lower surface of the second plate portion 82 and the upper surface of the third plate portion 83.

[0066] In the above-described embodiment, in FIG. 1, the distance d1 is shorter than the distance D2 (i.e., d1 < D2 is satisfied), but as described above, the distance d1 and the distance D2 may be the same. For example, the first flow path portion 36 may be formed by a bottomed groove provided on the upper surface of the second plate portion 82 and the lower surface of the third plate portion 83, and the second gas intermediate passage (for example, at least one of the gas intermediate passages 62b and 63b) may be formed by a bottomed groove provided on the lower surface of the third plate portion 83 and the upper surface of the second plate portion 82. In this case, since the upper bottom of the first flow path portion 36 and the lower bottom of the second gas intermediate passage are both located at the interface between the second plate portion 82 and the third plate portion 83, the distance d1 and the distance D2 are the same. Similarly, the distance d4 and the distance D1 may be the same.

[0067] In the above-described embodiment, the second passage 62 and the third passage 63 each correspond to the second gas passage, and the gas intermediate passages 62b and 63b each correspond to the second gas intermediate passage. That is, in the above-described embodiment, two second gas passages including the second gas intermediate passage are provided. However, the present invention is not limited to this, and at least one second gas passage including the second gas intermediate passage may be provided. For example, the wafer stage 10 may include only one of the second passage 62 and the third passage 63. Further, any two of the gas intermediate passages 61b to 63b may correspond to the first gas intermediate passage and the second gas intermediate passage of the present invention. For example, when the gas intermediate passage 63b is provided above the gas intermediate passage 62b, the gas intermediate passage 62b may correspond to the first gas intermediate passage and the gas intermediate passage 63b may correspond to the second gas intermediate passage.

[0068] In the above-described embodiment, in a top view, the first flow path portion 36 is provided near the outer periphery of the wafer mounting surface 22a, and the second flow path portion 37 is provided closer to the center of the wafer mounting surface 22a than the first flow path portion 36, but the present invention is not limited to this. Depending on the desired temperature distribution of the wafer mounting surface 22a, the first flow path portion 36 and the second flow path portion 37 may be provided at any position.

[0069] In the above-described embodiment, the width w of the refrigerant flow path 32 is not constant throughout the refrigerant flow path 32 but varies in some places, but this is not limited thereto and the width w may be constant throughout the refrigerant flow path 32.

[0070] In the above-described embodiment, the coolant flow passage 32 is formed in a spiral shape, but is not limited to this. For example, the coolant flow passage 32 may be formed in a zigzag shape.

[0071] In the above-described embodiment, the number of gas introduction passages 61a is smaller than the number of gas supply passages 61c and the number of first through-holes 51, but this is not limited thereto. For example, the number of gas introduction passages 61a may be the same as the number of gas supply passages 61c and the number of first through-holes 51. The same applies to the numbers of gas introduction passages 62a and gas introduction passages 63a.

[0072] In the above-described embodiment, the first to third through portions 51 to 53 of the ceramic plate through portion 50 are holes that vertically pass through the ceramic plate 20, but this is not limited thereto. For example, one or more of the first to third through portions 51 to 53 may have a bent portion inside the ceramic plate 20.

[0073] In the above-described embodiment, the ceramic plate 20 has the wafer attracting electrode 26 built in, but instead of or in addition to this, an RF electrode for generating plasma or a heater electrode (resistance heating element) may be built in. Also, the outer periphery 24 of the ceramic plate 20 may have a focus ring (FR) attracting electrode built in, or an RF electrode or a heater electrode built in.

[0074] In the above-described embodiment, the ceramic plate 20 is produced by hot-pressing and sintering a ceramic powder compact. However, the compact may be produced by stacking multiple tape compacts, by a mold casting method, or by compressing ceramic powder.

[0075] In the above-described embodiment, the wafer mounting table 10 may have a plurality of lift pin holes that vertically penetrate the wafer mounting table 10. The lift pin holes are holes for inserting lift pins that move the wafer W up and down relative to the wafer mounting surface 22a. For example, a plurality of lift pin holes are provided at equal intervals along concentric circles of the wafer mounting surface 22a when the wafer mounting surface 22a is viewed in plan. [Industrial Applicability]

[0076] The present invention can be used, for example, in an apparatus for processing wafers. [Explanation of symbols]

[0077] 10 wafer mounting table, 20 ceramic plate, 22a wafer mounting surface, 22 central portion, 24 outer periphery, 24a focus ring mounting surface, 26 wafer adsorption electrode, 30 cooling plate, 32 coolant flow path, 34 flange portion, 35 coolant supply path, 36 first flow path portion, 37 second flow path portion, 38 connection portion, 39 coolant discharge path, 40 resin bonding layer, 50 ceramic plate penetration portion, 51-53 first to third penetration portions, 60 gas passage, 61-63 first to third passages, 61a-63a gas introduction passage, 61b-63b gas intermediate passage, 61c-63c gas supply passage, 71a-73a gas auxiliary passage, 71b-73b gas distribution passage, 71c gas auxiliary passage, 81 first plate portion, 81a, 81b through hole, 81c Bottomed groove, 82 second plate portion, 82a, 82b through holes, 82c to 82f bottomed grooves, 83 third plate portion, 83a through hole, 83b bottomed groove, 84 first inner bonding layer, 85 second inner bonding layer, 90 resin sheet, 91 to 93 first to third bonding portions, 110 bonded body, 130 cooling plate, 191 first bonding portion, 192 second bonding portion, W wafer.

Claims

1. a ceramic plate having a wafer mounting surface on an upper surface thereof and incorporating an electrode; a cooling plate having a coolant flow path and provided on a lower surface side of the ceramic plate; a first ceramic plate penetration portion that penetrates the ceramic plate in a vertical direction and reaches the wafer mounting surface; a second ceramic plate penetration portion that penetrates the ceramic plate in the vertical direction and reaches the wafer mounting surface; a first gas passage provided at least inside the cooling plate and communicating with the first ceramic plate penetration portion; a second gas passage provided at least inside the cooling plate and communicating with the second ceramic plate penetration; Equipped with the first gas passage has a first gas intermediate passage extending in a direction intersecting the up-down direction, the second gas passage has a second gas intermediate passage extending in a direction intersecting the up-down direction, the second gas intermediate passage is provided above the first gas intermediate passage, The refrigerant flow path has a first flow path portion provided above the first gas intermediate passage and a second flow path portion provided below the second gas intermediate passage. Wafer placement stage.

2. The first ceramic plate through-hole and the second ceramic plate through-hole are each provided in plurality, the first gas intermediate passage communicates with a plurality of the first ceramic plate penetrations; the second intermediate gas passage communicates with the second plurality of ceramic plate penetrations; the first gas passage has first gas introduction passages that are connected to the first gas intermediate passage and the number of the first gas introduction passages is less than the number of the first ceramic plate penetrations; the second gas passage has second gas introduction passages that are connected to the second gas intermediate passage and the number of the second gas introduction passages is less than the number of the second ceramic plate penetrations; The wafer stage according to claim 1 .

3. a distance from the wafer mounting surface to an upper bottom of the first flow path portion is shorter than a distance from the wafer mounting surface to an upper bottom of the second flow path portion; The wafer stage according to claim 1 .

4. a distance from the wafer placement surface to an upper bottom of the first flow path portion is equal to or shorter than a distance from the wafer placement surface to a lower bottom of the second gas intermediate passage; The wafer stage according to claim 1 .

5. The cooling plate has n plate portions, n being an integer of 2 or more, the wafer mounting table includes first to (n−1)th bonding portions in which two adjacent plate portions of the n number of plate portions are bonded to each other directly or via a bonding layer, and an nth bonding portion in which the ceramic plate and the cooling plate are bonded to each other directly or via a bonding layer, the first gas intermediate passage is provided in any one of the first to (n-1)th joints, The second gas intermediate passage is provided in a joint portion among the first to nth joint portions that is above the first gas intermediate passage. The wafer stage according to claim 1 .

6. The main component of the ceramic plate is alumina, The main component of the cooling plate is titanium. The wafer stage according to claim 1 .

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